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Electrostatics (IV)
Electrostatics of
Metal-Oxide-Semiconductor Structure
Contents:
Reading assignment:
Key questions
1. Introduction
Metal-Oxide-Semiconductor structure:
metal
interconnect to gate
gate oxide
εox = 3.9 εo n+ polysilicon gate
p-type x
εs = 11.7 εo
Idealized 1D structure:
"metal"
(n+ polySi)
semiconductor
oxide (p type)
contact contact
-tox 0 x
log po, no
Na
po
no
ni2
Na
-tox 0 xdo x
Remember: no po = n2i
log po, no
Na
po
no
ni2
Na
-tox 0 xdo x
ρο
QG
0 0 xdo
-tox x
-qNa
2 Electric field
1 � x2
Eo(x2 ) − Eo(x1 ) = x1 ρo (x)dx
oxEox = sEs
Eox s
= 3
Es ox
Eox
Es
0
0 x
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 7-8
ρο
0 xdo
0
-tox x
-qNa
Eο
Eox
Es
0
-tox 0 xdo x
qNa
0 < x < xdo Eo (x) = − (x − xdo)
s
s + qNaxdo
−tox < x < 0 Eo (x) = Eo(x = 0 ) =
ox ox
2 Electrostatic potential
(with φ = 0 @ no = po = ni)
kT no kT po
φ= ln
φ=− ln
q ni q ni
in n+ gate: no = Nd
+ ⇒ φg = φn+
in p-QNR: po = Na ⇒ φp = − kT
q
ln Nnia
φο
φn+
φB
0
-tox 0 xdo x
φp
Built-in potential:
kT Na
φB = φg − φp = φn+ + ln
q ni
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 7-10
Eox
Es
0
-tox 0 xdo x
φο
φn+
Vox,o
φB 0 xdo
0 x
-tox
VB,o
φp
qNa
2s
qNax2do qNaxdo
−tox < x < 0 φo (x) = φp + + (−x)
2s ox
qNax2do qNaxdotox
φB = VB,o + Vox,o = +
2s ox
ox
Cox =
tox
1
�
γ= 2sqNa
Cox
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 7-12
2 Numerical example:
γ = 0.43 V 1/2
xdo = 91 nm
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 7-13
"metal"
semiconductor
contact oxide (p type) contact
φο
φn+
φB
0 0
x
-tox xdo
φp
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 7-14
VGB
+-
"metal"
(n+ polySi)
semiconductor
oxide (p type)
contact contact
-tox 0 x
• gate contact
• n+-polysilicon gate
• oxide
• semiconductor SCR
• semiconductor QNR
• semiconductor contact
VGB φB+VGB
? φB
0 -tox 0 xdo
x
xd
0
-tox 0 x
-qNa
Eox
Es
0
-tox 0 xd x
φ
VGB=0
VGB>0
φB+VGB
φB
0
-tox xd x
0
log p, n
Na
n
ni2
Na
-tox 0 xd x
φB → φB + VGB
For example,
�
�
�
s 4(φB + VGB )
�
xd(VGB ) = [ 1+ �
�
� − 1]
Cox γ2
VGB ↑ → xd ↑
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 7-18
Key conclusions
– SCR in semiconductor
– built-in potential across MOS structure.
• In most cases, can do depletion approximation in semi-
conductor SCR.
• Application of voltage modulates depletion region width
in semiconductor. No current flows.