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Figure 1: Package
RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 ID 18 A 18 A 18 A (*) 18 A 18 A
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D2PAK
TO-220
TO-220FP
100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
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DESCRIPTION The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
I2PAK
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TO-247
APPLICATIONS The MDmesh II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
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Table 7: Dynamic
Symbol gfs (1) Ciss Coss Crss Coss eq. (*) td(on) tr td(off) tf Qg Qgs Qgd Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Off-voltageRise Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Input Resistance Test Conditions VDS = 15 V, ID = 9 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 12 1950 420 60 270 22 18 90 30 65 10 30 1.6 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC
VGS = 0V, VDS = 0V to 400V VDD =250 V, ID = 9 A RG = 4.7 VGS = 10 V (see Figure 18) VDD = 400V, ID = 18 A, VGS = 10V, (see Figure 21) f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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Figure 19: Test Circuit For Inductive Load Switching and Diode Recovery Times
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D2PAK FOOTPRINT
* on sales type
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DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7
L3 L6 L7
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DIM. A A1 b b1 b2 c D E e L L1 L2 P R S
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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