Report lab 3 ee331

Procedure 2: Measurement of I-V Characteristic of a MOSFET

Question-2

(a) Scan through the measurement results and find the value of VGS which just starts
to produce a non-zero drain current. This is a first approximation to the threshold
voltage VT of the MOSFET under test.
(b) Pick a few values of VGS for which the drain current ID shows a clearly defined
saturation. Find the value of VDS at which the drain current ID reaches its saturation
value and then compare this actual value of VDS,sat to a computed value of VGS VT.
Comment on how close these values agree. How well does the textbook theory
predict the measured behavior of a real MOSFET?
(c) Using an electron mobility value of n = 800 cm2/V-s and a gate oxide thickness
of xox = 80 nm, compute the value of k = nCox, and from this value and a few of the
measured data points (where the drain current is saturated) make a rough estimate
of the W/L ratio for the 2N7000 MOSFET. Does this W/L ratio seem reasonable?

VGG = 1V
VDD
0
1
2
3
4
5
6
7
8
9
10

VRC (mV)
-0.01mV
-0.015mV
-0.014
-0.012
-0.01
-0.006
-0.005
-0.005
-0.003
-0.006
-0.002

VDS (V)
-4.9mV
1.015
2.02
3.04
3.99
4.99
6.02
6.99
8.03
9.06
10.06

ID (mA) = VRC/100
-0.009mA
-0.005
-0.002
-0.001
-0.001
0
0
0
0
0
0

VDS (V)
10.06
6.5
5.25
0.28

ID (A) = VRC/100
3.66x10-5
0.036
0.0482
0.0975

VDD = 10V
VGG (V)
2.0
2.5
3.0
3.5

VRC (V)
3.66mV
3.6
4.82
9.75

VDD = 9V
VGG (V)
2.0
2.5
3.0
3.5

VRC (V)
7.71mV
3.17
4.88
8.75

VDS (V)
9.02
5.89
4.11
0.25

ID (A) = VRC/100
7.71x10-5
0.0317
0.0488
0.0875

VGG (V)
2.0
2.5
3.0
3.5

VRC (V)
7.35mV
2.83
7.62
7.77

VDS (V)
8.01
5.22
0.37
0.22

ID (A) = VRC/100
7.35x10-5
0.0283
0.0762
0.0777

VGG (V)
2.0
2.5
3.0
3.5

VRC (V)
3.28mV
2.57
3.81
6.85

VDS (V)
7.05
4.51
3.23
0.189

ID (A) = VRC/100
3.28x10-5
0.0257
0.0381
0.0685

VGG (V)
2.0
2.5

VRC (V)
3.08mV
1.91

VDS (V)
6.02
3.91

ID (A) = VRC/100
3.08x10-5
0.0191

VDD = 8V

VDD = 7V

VDD = 6V

3.0
3.5

5.71
5.84

0.29
0.16

0.0571
0.0584

VGG (V)
2.0
2.5
3.0
3.5

VRC (V)
8.86mV
1.56
4.71
4.84

VDS (V)
4.98
3.63
0.26
0.13

ID (A) = VRC/100
8.86x10-5
0.0156
0.0471
0.0484

VGG (V)
2.0
2.5
3.0
3.5

VRC (V)
8.49mV
1.11
3.79
3.89

VDS (V)
3.99
2.95
0.21
0.09

ID (A) = VRC/100
8.49x10-5
0.0111
0.0379
0.0389

VGG (V)
2.0
2.5
3.0
3.5

VRC (V)
2.7mV
0.99
2.85
2.9

VDS (V)
2.98
2.01
0.12
0.07

ID (A) = VRC/100
2.7x10-5
0.0099
0.0285
0.029

VGG (V)
2.0
2.5
3.0
3.5

VRC (V)
2.64mV
0.94
1.99
2.02

VDS (V)
2.07
1.14
0.08
0.05

ID (A) = VRC/100
2.64x10-5
0.0094
0.0199
0.0202

VDD = 5V

VDD = 4V

VDD = 3V

VDD = 2V

VDD = 1V
VGG (V)
2.0
2.5
3.0
3.5

VRC (V)
6.59mV
0.59
0.92
6.59mV

VDS (V)
0.96
0.36
35.2mV
0.96

ID (A) = VRC/100
6.59x10-5
0.0059
0.0092
6.59x10-5

a/
c/
Electron mobility value: n = 800cm2/V.s
Gate oxide thickness: Xox = 80nm
K = nCOX = nOX / XOX = (800cm2/Vs x 8.854x10-14F/cm) / (80x10-7cm) = 8.854x10-6 F/Vs
W/L =
The drain current is saturated => VDS > (VGS VTN) >= 0
We have: iD = KNW/L(VGS VTN VDS/2)VDS =