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06-88-444
WINTER 2004
Overview
1. Introduction To PSPICE 2. Specifying Input Sources 3. Circuit Elements 4. MOSFET Models 5. Adding Variables 6. Analysis Options 7. Probe Application 8. PSPICE Simulation Procedure 9. NAND2 Gate Simulation 10. References
06-88-444
WINTER 2004
Introduction to PSPICE
SPICE stands for Simulation Program for Integrated Circuit Emphasis and is a computer program that accepts a circuit schematic input and outputs the simulated circuit behavior Berkeley SPICE, which is the original SPICE program, was developed at the University of California, Berkeley, and released for public use in 1972 PSPICE, which runs on the PC and Macintosh platforms, is one of the many commercial versions of SPICE and was introduced in 1984
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WINTER 2004
Voltage Source names start with V while Current Source names start with an I
eg. Voltage Source: Vin 3 0 1.2K; eg. Current Source: I4 12 2 15m;
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Degrees
Df = Damping Factor
Circuit Elements
The basic RLC circuit elements can be specified by using the appropriate letter as the first letter of the device name [1]:
Format: Rx node node value eg. R12 5 2 15K;
MOSFET transistors are specified using an M as the first letter of the device name
Format: Mx drain gate source body model_name + W=width_value L=length_value eg. M1 4 2 3 3 cmosn W=2u L=1u;
The .MODEL statement is required in addition to MOSFET declaration in order to define the level (MOSFET model) and parameters
06-88-444
WINTER 2004
MOSFET Models
Different MOSFET models have been developed over the years that provide accuracy to specific channel lengths As the channel length decreases, MOSFET devices suffer from short-channel effects that increase the leakage current and noise threshold levels
The device threshold voltage scales along with the technology and causes an exponential increase of leakage current [2]
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WINTER 2004
MOSFET Models
PSPICE LEVEL 1 Model (? 4m)
Implements the Shichman-Hodges model, which is based on the square law long-channel expressions [3] Best used to verify a manual analysis
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WINTER 2004
MOSFET Models
A MOSFET Model can be declared by the .MODEL statement and using the model name specified earlier [1]
Format: .MODEL model_name NMOS( + LEVEL=level_number parameters ) eg. .MODEL NFET NMOS(LEVEL=3 UO=580);
The parameters specified by each model can be declared by the user or the default values will be used The level 3 model, which is popular for digital design, has 21 ID parameters such as:
PHI (surface potential), TOX (oxide thickness), DELTA (width effect on threshold), KP (process transconductance coefficient), UO (surface mobility), and GAMMA (bulk threshold parameter)
06-88-444
WINTER 2004
Adding Variables
Variables can be added using the .PARAM statement A variable must be initialized before it can be used
Format: .PARAM variable_name = variable_value eg. .PARAM W=1 VDD=5 VSS=2.5;
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WINTER 2004
Analysis Options
There are many different analysis options but the three major types are [1]:
1. DC Analysis (.DC) Determines the DC bias points of a circuit for a sweeping source General Form: .DC source_name start end increment 2. AC Analysis (.AC) Specifies the frequency values used for the frequency response analysis (Types: LINear, OCTave, DECade) General Form: .AC LIN points start stop 3. Transient Analysis (.TRAN) Simulates circuit operation over time for various inputs General Form: .TRAN time_increment final_time
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Probe
The .PROBE statement is the most commonly used output option which is used to plot the circuit waveforms Waveforms can be displayed in the probe application (invoked with the .PROBE statement) by selecting Trace ? Add Trace and then specifying a trace expression Multiple traces can be viewed on a single plot and multiple plots can be added to the window by selecting Plot ? Add Plot to Window
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Circuit Description:
M1 4 2 3 3 cmosp W={Width*factor} L=1u; M2 4 1 3 3 cmosp W={Width*factor} L=1u; M3 4 1 5 5 cmosn W={Width*factor} L=1u; M4 5 2 0 0 cmosn W={Width*factor} L=1u;
Vin,A 0 0 1 1
Vin,B 0 1 0 1
Vout 1 1 1 0
06-88-444
WINTER 2004
06-88-444
WINTER 2004
References
[1] Paul W. Tuinenga, SPICE: A Guide to Circuit Simulation & Analysis Using PSPICE, 1995 Prentice Hall [2] Behzad Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill Series 2001 [3] www.csee.umbc.edu/~plusquel/vlsiII/slides/mos4.html
06-88-444
WINTER 2004