RF Manual 15 Edition: Application and Design Manual For High Performance RF Products May 2011

RF Manual 15th edition
Application and design manual for High Performance RF products May 2011
High Performance RF for the most demanding applications
NXPs RF Manual makes design work much easier

NXP's RF Manual is one of the most important reference tools on the market for todays RF designers. It features our complete range of RF products, from low- to high-power signal conditioning and high-speed data converters.
High Performance RF for the most demanding applications When it comes to the most demanding RF applications, the first thing on the designer's mind is to meet the specified performance. So that is exactly what NXP enables you to do, with the added benefits of silicon-based, volume manufacturing process technologies. That means you can design your systems to the highest specifications, while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. Shipping more than four billion RF products annually, NXP is a clear industry leader in High Performance RF. From satellite receivers, cellular base stations, and broadcast transmitters to ISM (Industrial, Scientific, and Medical) and aerospace and defense applications, you will find the High Performance RF products you need at NXP. And constant innovation ensures you always have the most effective solutions at your fingertips whether it's innovative Doherty power amplifier architectures, JESD204A CGV TM serialized data interfaces, or tiny GPS LNAs. So if you're looking to improve your RF performance, design a highly efficient signal chain, or break new ground with an innovative ISM application, then NXP's creative thinking and expert support can help you every step of the way. High Performance RF design challenge The day-to-day work offers many challenges to the RF designer, from the high diversity of signals to integration, or simply the time spent. We recently started a design challenge (www.hprf-design-challenge.nxp.com). It offers a forum for RF enthusiasts to walk with us through the steps of a design, from concept to prototype. This is, in essence, the goal of the RF Manual to make design work easier. Whats new? This RF Manual provides updated information on RF applications clustered in different segments. The segments are as follows: wireless and broadband communication infrastructure, TV and satellite, portable devices, automotive, ISM, and aerospace and defense. We describe in detail the new developments in our core technologies, QUBiC4 and LDMOS. We have also added GaN technology to our product offering; this key technology lets high-power amplifiers deliver very high efficiency in next generation wireless communication systems.
NXP Semiconductors RF Manual 15th edition
New products include GaN power amplifiers, a complete line of overmolded plastic (OMP) RF power transistors and MMICs, and our eighth generation LDMOS transistors (Gen8). Next-generation devices and improved products include GPS LNAs, medium power amplifiers, IF gain blocks, LO generators, satellite LNB ICs, and CATV modules. Our portfolio for the wireless communication infrastructure has expanded, with a comprehensive set of best-in-class Doherty amplifier designs, a broad selection of amplifiers (medium power, variable gain, low noise), mixers, IQ modulators, and our JESD204A-compliant, high-speed DACs and ADCs.
Im proud to present the 15th edition of our RF Manual. It covers NXPs entire range of RF products and solutions in one comprehensive catalog, and Im convinced that youll find this version the most compelling and useful yet.
Kind regards,
John Croteau
Sr. Vice President & General Manager Business Line High Performance RF
RF Manual web page www.nxp.com/rfmanual
Contents
1 Products by application
1.1.1 1.1.2 1.1.3 1.2.1 Base stations (all cellular standards and frequencies)
9
______________________________________________________________________________________________________________________________
1.1 Wireless communication infrastructure__________________________________________________________________________________________________________________________________________________________________ 9 9 Point-to-point ___________________________________________________________________________________________________________________________________________________________________________________________ 12 Repeater ___________________________________________________________________________________________________________________________________________________________________________________________________ 14 CATV optical (optical node with multiple out-ports)________________________________________________________________________________________________________________________________ 15
______________________________________________________________________________________________________________________________________________________________
1.2 Broadband communication infrastructure ____________________________________________________________________________________________________________________________________________________________15 1.2.2 CATV electrical (line extenders) 1.3.1 1.3.2 1.3.3 1.3.4 1.3.5 1.4.1 1.4.2 1.4.3 1.4.4 1.4.5 1.5.1 1.5.2 1.5.3 1.5.4 1.6.1 1.6.2 1.6.3 1.6.4 1.6.5 1.7.1 16
1.3 TV and satellite ______________________________________________________________________________________________________________________________________________________________________________________________________ 17 Network interface module (NIM) for TV reception___________________________________________________________________________________________________________________________________ 17 Basic TV tuner ___________________________________________________________________________________________________________________________________________________________________________________________ 19 Satellite outdoor unit, low noise block (LNB) for multiple users
____________________________________________________________________________________________________________
20
Satellite multi-switch box - 4x4 (up to 16x16) / DiSEqC / SMATV _____________________________________________________________________________________________________________21 VSAT ________________________________________________________________________________________________________________________________________________________________________________________________________ 22 GPS ___________________________________________________________________________________________________________________________________________________________________________________________________________24 FM radio __________________________________________________________________________________________________________________________________________________________________________________________________ 25 Cellular receive _________________________________________________________________________________________________________________________________________________________________________________________26 802.11n WLAN (dual concurrent) ______________________________________________________________________________________________________________________________________________________________27 Generic RF front-end ________________________________________________________________________________________________________________________________________________________________________________28 Active antenna, e.g. SDARS, GPS__________________________________________________________________________________________________________________________________________________________________ 29 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission __________________________________________________ 30 Tire pressure monitoring system ______________________________________________________________________________________________________________________________________________________________31 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) ________________________________________________________________________________________________________________________32 Broadcast / ISM (10 - 1500 MHz range)
__________________________________________________________________________________________________________________________________________________
1.4 Portable devices ____________________________________________________________________________________________________________________________________________________________________________________________________24
1.5 Automotive ___________________________________________________________________________________________________________________________________________________________________________________________________________ 29
1.6 Industrial, scientific & medical (ISM) ____________________________________________________________________________________________________________________________________________________________________ 33 33 E-metering, RF generic front-end with a single antenna / ZigBee ______________________________________________________________________________________________________________34 RF Microwave furnace application __________________________________________________________________________________________________________________________________________________________ 35 RF plasma lighting ___________________________________________________________________________________________________________________________________________________________________________________ 36 Medical imaging
______________________________________________________________________________________________________________________________________________________________________________________
37
1.7 Aerospace and defense ________________________________________________________________________________________________________________________________________________________________________________________ 38 Microwave products for avionics, L- and S-band radar applications
_____________________________________________________________________________________________________
38
Focus applications, products & technologies

2.1.1 2.1.2 2.1.3 2.2.1
40
2.1 Wireless communication infrastructure _______________________________________________________________________________________________________________________________________________________________ 40 VGAs with superior linearity for enhanced system performance ____________________________________________________________________________________________________________ 40 Doherty amplifier technology for state-of-art wireless infrastructure _____________________________________________________________________________________________________42 The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8 ______________________________________________________________________________ 44 Connecting people, protecting your network: NXP's CATV C-family for the Chinese SARFT standard ________________________________________________ 45
2.2 Broadband communication infrastructure ___________________________________________________________________________________________________________________________________________________________ 45 2.2.2 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks __________________________________________________________________________________ 48 2.3 TV and satellite _____________________________________________________________________________________________________________________________________________________________________________________________________ 50 2.3.1 LNAs for TV/STB tuners with programmable gain __________________________________________________________________________________________________________________________________ 50 2.3.2 Complete satellite portfolio for all LNB architectures______________________________________________________________________________________________________________________________52 2.3.3 VSAT, 2-way communication via satellite_________________________________________________________________________________________________________________________________________________ 54 2.3.4 Low noise LO generators for microwave & mmWave radios ___________________________________________________________________________________________________________________ 56 2.4 Portable devices ___________________________________________________________________________________________________________________________________________________________________________________________________ 57 2.4.1 2.5.1 QUBiC4X SiGe:C LNAs for GPS, GloNass and Galileo with AEC-Q100 qualification ______________________________________________________________________________57 Medical applications driven by RF power ________________________________________________________________________________________________________________________________________________59 2.5 Industrial, scientific & medical ______________________________________________________________________________________________________________________________________________________________________________59 2.5.2 RF-driven plasma lighting________________________________________________________________________________________________________________________________________________________________________ 60 2.5.3 QUBiC4 Si and SiGe:C transistors for any RF function _____________________________________________________________________________________________________________________________ 61 2.5.4 Buidling on decades of innovation in microwave and radar ___________________________________________________________________________________________________________________ 62 2.5.5 Digital broadcasting at its best _______________________________________________________________________________________________________________________________________________________________ 64 2.5.6 Broadband medium power amplifiers for all 400 to 2700 MHz applications __________________________________________________________________________________________ 65 2.6 Technology____________________________________________________________________________________________________________________________________________________________________________________________________________ 66 2.6.1 Boost efficiency and lower system cost in wireless infrastructure with GaN __________________________________________________________________________________________ 66 2.6.2 Looking for a leader in SiGe:C? You've just found us! ______________________________________________________________________________________________________________________________67 2.6.3 Completing NXP's RF power transistor offering: products in plastic packages (OMP) ___________________________________________________________________________69 6 NXP Semiconductors RF Manual 15th edition
3
3.1
Products by function
70
73 73 74
New products ______________________________________________________________________________________________________________________________________________________________________________________________________70

____________________________________________________________________________________________________________________________________________________________________________________________________________ _________________________________________________________________________________________________________________________________________________________________________________________
3.2 RF diodes 3.2.1
Varicap diodes
3.2.2 PIN diodes
_______________________________________________________________________________________________________________________________________________________________________________________________
3.2.3 Band switch diodes __________________________________________________________________________________________________________________________________________________________________________________ 76 3.2.4 Schottky diodes ________________________________________________________________________________________________________________________________________________________________________________________ 76 3.3 RF Bipolar transistors 3.3.1 3.4 RF ICs 3.4.1
________________________________________________________________________________________________________________________________________________________________________________________
77 80
Wideband transistors _______________________________________________________________________________________________________________________________________________________________________________77

_________________________________________________________________________________________________________________________________________________________________________________________________________________
RF MMIC amplifiers and mixers _______________________________________________________________________________________________________________________________________________________________ 80
3.4.2 Wireless infrastructures ICs _____________________________________________________________________________________________________________________________________________________________________ 82 3.4.3 Satellite LNB RF ICs _________________________________________________________________________________________________________________________________________________________________________________ 82 3.4.2 Low noise LO generators for VSAT and general microwave applications _______________________________________________________________________________________________ 83 3.5 RF MOS transistors ____________________________________________________________________________________________________________________________________________________________________________________________ 83 3.5.1 JFETs _______________________________________________________________________________________________________________________________________________________________________________________________________ 83
________________________________________________________________________________________________________________________________________________________________________________________________________
3.5.2 MOSFETs _________________________________________________________________________________________________________________________________________________________________________________________________ 85 3.6 RF Modules 3.6.1 87 87 CATV push-pulls

______________________________________________________________________________________________________________________________________________________________________________________
3.6.2 CATV push-pulls 1 GHz ____________________________________________________________________________________________________________________________________________________________________________87 3.6.3 CATV power doublers _____________________________________________________________________________________________________________________________________________________________________________ 88 3.6.4 CATV optical receivers ____________________________________________________________________________________________________________________________________________________________________________ 88 3.6.5 CATV reverse hybrids ______________________________________________________________________________________________________________________________________________________________________________ 88 3.7 RF power transistors __________________________________________________________________________________________________________________________________________________________________________________________ 89 3.7.1 3.7.2 3.7.3 3.8 Base station transistors ___________________________________________________________________________________________________________________________________________________________________________ 89 Broadcast / ISM (industrial, scientific, medical) RF power transistors _____________________________________________________________________________________________________ 92 Microwave LDMOS RF power transistors _________________________________________________________________________________________________________________________________________________93
High-speed data converters _______________________________________________________________________________________________________________________________________________________________________________94
4
4.1
Design support
95
S-parameters ______________________________________________________________________________________________________________________________________________________________________________________________________ 95 4.2.1 Spice models ____________________________________________________________________________________________________________________________________________________________________________________________95

_______________________________________________________________________________________________________________________________________________________________________________
4.2 Simulation models ______________________________________________________________________________________________________________________________________________________________________________________________ 95 4.2.2 Interactive datasheet 95
4.2.3 Simulation models for RF power devices _________________________________________________________________________________________________________________________________________________96 4.3 Application notes _______________________________________________________________________________________________________________________________________________________________________________________________ 96 4.4 Demo boards 4.4.1
_____________________________________________________________________________________________________________________________________________________________________________________________________
96
RF transistors, MMIC & IC demo boards __________________________________________________________________________________________________________________________________________________96
4.4.2 RF power transistor demo boards ____________________________________________________________________________________________________________________________________________________________97 4.4.3 High-speed converter demo boards ________________________________________________________________________________________________________________________________________________________97 4.5 Samples_______________________________________________________________________________________________________________________________________________________________________________________________________________ 97 4.6 Datasheets _________________________________________________________________________________________________________________________________________________________________________________________________________ 97 4.7 Design-in support ______________________________________________________________________________________________________________________________________________________________________________________________ 98 4.8 Interactive selection guides_______________________________________________________________________________________________________________________________________________________________________________ 98
Cross-references & replacements________________________________________________________99

5.1 5.2 Cross-references: manufacturer types versus NXP types _______________________________________________________________________________________________________________________ 99 Cross-references: NXP discontinued types versus NXP replacement types__________________________________________________________________________________________109
Packing and packaging information_____________________________________________________ 111

6.1 6.2 Packing quantities per package with relevant ordering code ________________________________________________________________________________________________________________ 111 Marking codes list __________________________________________________________________________________________________________________________________________________________________________________ 114
7 8 9
Abbreviations _________________________________________________________________________ 116 Contacts and web links ________________________________________________________________ 117 Product index _________________________________________________________________________ 118
1. Products by application
1.1 Wireless communication infrastructure
See also brochure: 'Your partner in Mobile Communication Infrastructure design', document number 9397 750 16837. Application diagram
Products by application
9
1.1.1
Base stations (all cellular standards and frequencies)
LPF SER I-DAC PLL VCO LPF DIGITAL BASEBAND & CONTROL SER Q-DAC BPF SER ADC PLL VCO LPF SER ADC VGA VGA
I/Q-MOD
mixer
X
0
90
POWER AMPLIFIER VGA Tx BPF MPA HPA Isolator

antenna Tx/Rx
PLL
X
mixer
IF mixer
X
mixer duplexer
IF mixer
Rx BPF
LNA
LNA
X
PLL VCO C TOWER MOUNTED AMPLIFIER
antenna Rx1
PLL
SER ADC LPF PROCESSING VGA
X
IF mixer DATACONVERTERS Rx BPF LNA LNA RF POWER
RF SMALL SIGNAL
The block diagram above shows base station transmit (upper part, Tx) and receive (lower part, Rx) functions, and includes the Tx feedback function (middle part, Tx feedback). The signals generated in the "Digital Baseband & Control" block follow the air interface standard requirements. These signals are interfaced to the DAC via serial interface SER. The SER can use the LVDS or JEDEC standard. After the signals are fed to the I-DAC and Q-DAC, they are converted to the analog domain. Before the I and Q signals enter the IQ modulator, they are first low-pass filtered to remove any aliasing signals. At the IQ modulator, the signals are up-converted to RF using an LO signal coming from the PLL/VCO device, typically called the LO generator. Due to device aging and variation in cell load, the up-converted signals are fed to the VGA to control the power level. An additional band pass filter is needed to remove the out-of-band spurs. The clean signal is fed to the RF power board, where the desired transmit power is made. Finally, the RF power signal is fed to the antenna via a duplexer. Directly after the final stage amplifier, a signal coupler picks up a certain amount of the RF signal, which is attenuated and then down-mixed using the IF Mixer. This signal is called the observation signal, and is used to derive coefficients for the digital pre-distortion algorithm. Since power levels vary, the observation is first fed to the VGA to control the power level, and after band pass filtering, the signal is converted to the digital domain using an ADC. The same serial interface is used to send the digital signals to the baseband processor. At the receiver, the received signal directly after the duplexer is fed to the LNA for direct amplification, since the received signal level is quite low. If the first LNA is mounted in the tower top, a long RF cable is used to interface the RF signals with a base transceiver station (BTS). A second LNA is used to amplify the received signals. Band pass filtering is applied to reduce the out-of-band signals levels before these signals are applied to the IF mixer. Signal levels that change dramatically require a VGA to maintain the full scale ranges of the I-ADC and Q-ADC for optimal conversion performance. Low pass filtering is used before the ADC to remove the aliasing signals. These digital signals are interfaced to the baseband using a serial interface such as JEDEC. The sample clocks and LO signals are derived from clock cleaners and PLLs respectively. This is denoted as Clock and PLL / VCO in the block diagram. This set-up is required to make a synchronized system. Typically denoted in SNRs, and in order to improve reception quality, the receive function is equipped with a second receiver, which is also called a diversity receiver. NXP Semiconductors RF Manual 15th edition
Recommended products
Function Product MMIC fmin (MHz) 920 920 700 700 700 500 700 1805 2010 1800 2110 1800 2000 2500 2500 2500 2500 3400 3500 fmax (MHz) 960 960 1000 1000 1000 1000 1000 1880 2025 2050 2170 2200 2200 2700 2700 2700 2700 3600 3800 P1dB (W) 30 250 80 140 160 300 300 250 50 140 40 10 160 40 50 100 140 100 90 GP (dB) 29 19 19 19 19 19 19 18 14,5 19 19 19 18 17,5 17,5 17,5 17 13 13 Package SOT822-1 SOT502 SOT502 SOT1204 SOT502 SOT1121 SOT539 SOT539 SOT1130 SOT1204 SOT1121 SOT1179 SOT502 SOT1121 SOT1130 SOT502 SOT502 SOT502 SOT1246B Type BLM6G10-30(G) BLF7G10L(S)-250 BLF8G10L(S)-80 BLP7G10S-140G BLF8G10L(S)-160 BLF6H10L(S)-300P BLF8G10L(S)-300P BLF7G20L(S)-250P BLD6G21L(S)-50 BLP7G21(S)-140P(G) BLF6G22L(S)-40P BLP7G22-10 BLF7G22L(S)-160 BLF6G27L(S)-40P BLD7G27S-50 BLF7G27L(S)-100 BLF7G27L(S)-140 BLF6G38(LS)-100 BLF7G38LS-90P
Final
HPA
Integrated Doherty Final Driver/Final Driver Final Driver/Final Integrated Doherty Final
Function
Freq band (MHz) 728-768 920-960 1476-1511 1805-1880 1930-1990 2110-2170 2110-2170 2300-2400 2500-2700 3400-3600
PPEAK (dBm) 58 57.3 58.1 58.6 58.2 47 57.2 55 50.3 51
POUT-AVG (dBm) 50 49.3 49.6 51 50 39 49.2 47.5 42.3 43
VDS (V) 32 30 28 28 28 28 28 28 28 28
Gain (dB) 20.5 16 16 16 16 13 16 15.2 14.5 11.5
Drain Eff. (%) 47 50 42 47.6 40 38 47 44 39 32
Type SYM ASYM ASYM 3-WAY SYM SYM 3-WAY ASYM SYM SYM
Main transistor BLF6G10LS-200RN BLF8G10LS-160 BLF7G15LS-200 BLF7G20LS-200 BLF7G20LS-250P BLD6G22L(S)-50 BLF7G22LS-160 BLF7G24LS-100 1/2 BLF7G27LS-90P BLF6G38-50
Peak transistor BLF6G10LS-200RN BLF7G10LS-250 BLF7G15LS-300P 2x BLF7G20LS-200 BLF7G20LS-250P BLD6G22L(S)-50 2x BLF7G22L(S)-160 BLF7G24LS-140 1/2 BLF7G27LS-90P BLF6G38-50
HPA Doherty designs
Product highlight: BLF7G27L(S)-100/140

Utilising NXPs Gen7 LDMOS technology, this pair of transistors is designed to give leading performance in 2.7 GHz LTE applications. The BLF7G27L(S)-100 is designed to be the main amplifier, and the BLF7G27L(S)-140 the peak amplifier, in asymmetrical Doherty designs. This pair, along with others at different operational frequencies, are already firm industry favourites with many design wins around the world.
10 NXP Semiconductors RF Manual 15th edition
` Asymmetrical Doherty efficiency 37.6% with 15.2 dB gain at 47.5 dB output power ` Capable of 26-32 V operation ` Extremely low thermal resistance ` Consistent device performance ` Unrivalled ruggedness
Features
Function Discrete attenuator
Product RF diode PIN diode
Package SOT753 SOT753 Various^ Package
Type BAP64Q BAP70Q BAP64 Type BFU725F/N1 BFU690F BFU730F BFU760F BFU790F BGU7051 BGU7052 BGU7053 Type BGA7202 BGA7204
Function
Product
RF transistor LNA (low noise amplifier) MMIC
SiGe:C transistor
SOT343F
SiGe:C MMIC
SOT650
Function Single VGA (variable gain amplifier) Function Dual VGA (variable gain amplifier) Function MPA (medium power amplifier) Function Dual mixer
Product MMIC
Gain range 23 dB 31 dB
Package SOT617
Product MMIC
Gain range 24 dB 28 dB PL (1dB) @ 940 MHz 25 dBm 24 dBm 28 dBm 28 dBm 30 dBm Frequency 0.7 - 1.2 GHz 1.7 -2.7 GHz Noise 131 dBc/Hz @ 1 MHz offset @ 5.3 GHz NFL -159 dBm/Hz
Package SOT617
Type BGA7350 BGA7351 Type BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* Type BGX7220* BGX7221* Type BGX7300*
Product
Package SOT908 SOT89 SOT908 SOT89 SOT908 Package SOT1092 Package SOT617
MMIC
Product MMIC
Function Product PLL + VCO MMIC (LO generator) Function IQ modulator Product MMIC
Package SOT616
Type BGX7100*
* = check status at 3.1 new products, as this type has not been released for mass production. ^ = SOD523, SOD323, SOT23 & SOT323 Function Product Max. sampling frequency 650 Msps Dual-channel DAC 160 Msps 125 Msps 750 Msps Data converter 80 Msps Single-channel ADC 125 Msps 125 Msps 125 Msps Dual-channel ADC 125 Msps 125 Msps # of bits 14 14 14 14 12 14 14 11 14 14 Interface LVCMOS LVCMOS LVCMOS JESD204A LVCMOS LVCMOS&LVDS DDR LVCMOS&LVDS DDR LVCMOS&LVDS DDR LVCMOS&LVDS DDR JES204A Type DAC1405D650 DAC1405D160 DAC1401D125 DAC1408D750 ADC1207S080 ADC1415S125 ADC1410S125 ADC1112D125 ADC1412D125 ADC1413D125
Product highlight: DAC1408D750 dual 14-bit DAC with JESD204A interface

Optimized for high-speed applications, such as 2.5/3/4G wireless, video broadcast, and instrumentation, this advanced 14-bit DAC has selectable interpolating filters and a four-lane CGV serial interface compliant with JEDEC JESD204A standard.
` ` ` ` ` ` ` `
Features
Dual-channel, 14-bit resolution 750 Msps maximum output rate Interpolation filters: 2x, 4x, 8x Four-lane JEDEC JESD204A serial digital input 32-bit programmable NCO frequency synthesizer with low-power option MDS (Multi-DAC Synchronization) SPI interface HVQFN64 package
11
1.1.2
Point-to-point
Application diagram
INDOOR UNIT POWER SUPPLY PLL VCO

0 90
OUTDOOR UNIT
VGA MPA IF VGA MPA PA
BPF
BUF
DIGITAL SIGNAL PROCESSOR
REF
MPX
to/from IDU
MPX
REF
SYNTH PLL
PLL
ANTENNA
PMU
PMU
PLL VCO DATA INTERFACE
90
ANALOG VGA
VGA
LNA
IF
LNA
LNA
LPF
VGA VGA brb406
Recommended products Indoor unit

Function Single VGA (variable gain amplifier) Function Dual VGA (variable gain amplifier) Function Product MMIC Gain range 23 dB 31 dB Gain range 24 dB 28 dB PL (1dB) @ 940 MHz 17 dBm 20 dBm 21 dBm 25 dBm 24 dBm 28 dBm 28 dBm 30 dBm NFL - 159 dBm/Hz Package SOT617 Type BGA7202 BGA7204 Type BGA7350 BGA7351 Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* Type BGX7100* Function Product RF MMIC SiGe:C MMIC SiGe:C transistor RF transistor Wideband transistor SOT343R SOT143R IF MMIC Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908 Package SOT616 Function Product IF gain block MMIC General purpose wideband amplifiers SOT363 Package Type BGA2800 BGA2801 BGA2815 BGA2816 BGM1012 BGA2714 BGA2748 BGA2771 Type BGU7003 BGU7051 BGU7052 BGU7053 BFU725F/N1 BFU710F BFU730F BFG425W BFG424W BFG325/XR
Product MMIC
Package SOT617
Product
MPA (medium power amplifier)
Package SOT891 SOT650
MMIC
LNA
SOT343F
Function IQ modulator
Product MMIC
* = check status at 3.1 new products, as this type has not been released for mass production.
12
Outdoor unit
Function Single VGA (variable gain amplifier) Function Product MMIC 31 dB PL (1dB) @ 940 MHz 17 dBm 20 dBm 21 dBm 25 dBm 24 dBm 28 dBm 28 dBm 30 dBm Gain range 23 dB SOT617 BGA7204 Package Type BGA7202 Function Dual VGA (variable gain amplifier) Function PLL + VCO (LO generator) Function Product MMIC 28 dB Product MMIC Noise -131 dBc/Hz @ 1 MHz offset @ 5.3 GHz Package SOT617 Gain range 24 dB SOT617 BGA7351 Type BGX7300* Package Type BGA7350
Product
Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908 Package
Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* Type BFU725F/N1 BFU730F BFU760F BFU790F Type BFU725F/N1 BFU730F BFU760F BFU790F Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 BGA2714
MMIC
Product Wideband transistor
Package SOT343R
Oscillator
RF transistor
Function Buffer
Product RF transistor SiGe:C transistor
SiGe:C transistor
SOT343F
Type BFG424W BFG425W BFU725F/N1 BFU730F BFU760F BFU790F
SOT343F
Function LNA
Package SOT343F
NXP BTS Tx component demonstrator board
Function
Product
Package
IF gain block IF
MMIC SOT363 General purpose wideband amplifiers
MMIC
Product highlight: BGA7350 MMIC variable gain amplifier

The BGA7350 MMIC is a dual independent digitally controlled IF variable gain amplifier (VGA) operating from 50 to 250 MHz. Each IF VGA amplifies with a gain range of 24 dB and, at its maximum gain setting, delivers 17 dBm output power at 1 dB gain compression and a superior linear performance. The BGA7350 is optimized for a differential gain error of less than 0.1 dB for accurate gain control and has a total integrated gain error of less than 0.4 dB. It is housed in a 32-pin leadless HVQFN package (5 x 5 mm).
` Dual independent digitally controlled 24 dB gain range VGAs, with 5-bit control interface ` 50 to 250 MHz frequency operating range ` Gain step size: 1 dB 0.1 dB ` 18.5 dB power gain ` Fast gain stage switching capability ` 17 dBm output power at 1 dB gain compression ` 5 V single supply operation with power-down control ` Logic-level shutdown control pin reduces supply current ` ESD protection at all pins ` Unconditionally stable
NXP Semiconductors RF Manual 15th edition 13
Features
1.1.3
Repeater
Application diagram
Tx0 PA Dual mixer
mixer
Dual DAC LPF I-DAC
Dual ADC LPF ADC DDC/ DUC Filtering
Dual VGA VGA
Dual mixer
mixer
LNA RF SAW LNA
Rx0
Tx1 PA
mixer
Rx1 LPF ADC

mixer
LPF Q-DAC
VGA
RF SAW
LNA
Clock Recovery jitter cleaner
PLL VCO LO Signal

brb631
Function
Product
Dual-channel DAC Data converter Dual-channel ADC Function Product Driver/Final Integrated Doherty Driver/Final MMIC Integrated Doherty Driver/Final Function fmin (MHz) 1450 1800 2010 1 2100 2110 2300 3400 3400
Max. sampling frequency 650 Msps 160 Msps 125 Msps 750 Msps 125 Msps 125 Msps 125 Msps P1dB (W) 40 40 50 10 30 50 75 25 50
# of bits 14 14 14 14 11 14 14 GP (dB) 22 18.8 14.5 18.5 29.5 14 17 15 14 Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908 Package SOT617 Package SOT1092 Package
Interface LVCMOS LVCMOS LVCMOS JESD204A LVCMOS&LVDS DDR LVCMOS&LVDS DDR JES204A Package SOT1112A SOT608A SOT1130B SOT538A SOT834-1 SOT1130B SOT1121B SOT608B SOT502A
Type DAC1405D650 DAC1405D160 DAC1401D125 DAC1408D750 ADC1112D125 ADC1412D125 ADC1413D125 Type BLF6G15L-40BRN BLF6G20-40 BLD6G21LS-50 BLF6G21-10G BLM6G22-30 BLD6G22LS-50 BLF7G27LS-75P BLF6G38S-25 BLF6G38-50 Type BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130 Type BGA7350 BGA7351 Type BGX7220* BGX7221* Type BGU7051 BGU7052 BGU7053 Type BGX7300*
HPA
fmax (MHz) 1550 2000 2025 2200 2200 2170 2700 3800 3800
Product
MMIC
PL (1 dB) @ 940 MHz 21 dBm 25 dBm 24 dBm 28 dBm 28 dBm 30 dBm Gain range 24 dB 28 dB Frequency range 1.7 - 2.7 GHz 0.7 - 1.2 GHz
Function Dual VGA (variable gain amplifier) Function Dual mixer Function LNA Function PLL + VCO (LO generator)
Product MMIC Product MMIC Product
MMIC Product MMIC Noise -131 dBc/Hz @ 1 MHz offset @ 5.3 GHz
SOT650 Package SOT617
Product highlight: BGX7221 MMIC dual down-mixer

The BGX7221 combines a pair of high performance, high linearity down-mixers for use in receivers that have a common local oscillator used with, for example, main and diversity paths. The device covers frequency bands from 1700 to 2700 MHz with an extremely flat behavior.
` ` ` ` ` ` ` ` ` `
Features
8.5 dB conversion gain over all bands 13 dBm input, 1 dB compression point 25.5 dBm input third-order intercept point 10 dB (typ) small signal noise figure Integrated active biasing Single +5 V supply operation Power-down per mixer with hardware control pins Low bias current in power-down mode Matched 50 single-ended RF and LO input impedances ESD protection at all pins
14
1.2 Broadband communication infrastructure

1.2.1 CATV optical (optical node with multiple out-ports)
Application diagram
RF power amplifier
duplex filter coax out port 1
fiber in
RF forward receiver
RF preamplifier
splitter
coax out port 2
coax out port 3
coax out port 4

bra852
Function RF forward receiver Function RF pre-amplifier Product Forward path receiver Frequency 870 MHz Package SOT115 SOT115 SOT115 Gain (dB) 18.2 - 18.8 18 - 19 21 - 22 23 - 24.5 27 - 28.5 Gain (dB) 22 - 24 24 - 26 22 - 23.5 26.5 - 28 Type BGO807 BGO807CE BGO827 Type BGD812 BGY885A BGY887 CGY1043 CGY1047 Type CGD942C CGD944C CGD1042Hi CGD1046Hi
Product Frequency Power doubler 870 MHz 870 MHz Push-pulls 1 GHz
Function RF power amplifier
Product Power doublers
Frequency 870 MHz 1 GHz
Product highlight: BGO807CE optical receiver

The BGO807CE is an integrated optical receiver module that provides high output levels and includes an integrated temperaturecompensated circuitry. In your optical node design, BGO807CE enables a high performance/ price ratio and ruggedness. When upgrading an HFC network from analog to digital, our BGO807CE is the perfect fit.
` ` ` ` ` ` `
Features
Excellent linearity Low noise Excellent flatness Standard CATV outline Rugged construction Gold metallization ensures excellent reliability High optical input power range
15
1.2.2
CATV electrical (line extenders)
Application diagram
duplex filter
RF preamplifier
RF power amplifier
duplex filter
coax in
coax out
RF reverse amplifier
bra505
Function Product Frequency 550 MHz 600 MHz 750 MHz RF pre-amplifier Gain (dB) 34 - 35 33.5 - 35.5 26.2 - 27.8 21 - 22 33.2 - 35.2 18 - 19 21 - 22 18 - 19 21 - 22 33.5 - 34.5 34.5 - 36.5 18 - 19 21 - 22.5 23 - 24.5 27 - 28.5 29 - 31 32 - 34 Type BGY588N BGY588C BGY587B BGY687 BGE788C BGY785A BGY787 BGY885A BGY887 BGY888 CGY888C BGY1085A CGY1041 CGY1043 CGY1047 CGY1049 CGY1032 Function Product Frequency 550 MHz 750 MHz Gain (dB) 18-19 19.5 - 20.5 18.2 - 18.8 18.2 - 18.8 20 - 20.6 18 - 19 18.2 - 18.8 19.7 - 20.3 22 - 23 24 - 26 22 - 24 24 - 26 19.5 - 22 22 - 23.5 23.5 - 25.5 26 - 28 22 - 24 23.5 - 25.5 26 - 28 Type BGD502 BGD704 BGD712 BGD712C BGD714 BGD802 BGD812 BGD814 CGD942C CGD944C CGD1042H CGD1044H CGD1040Hi CGD1042Hi CGD1044Hi CGD1046Hi CGD982HCi CGD985HCi CGD987HCi
870 MHz RF power amplifier Power doublers
Push-pulls
870 MHz
1003 MHz
1003 MHz
Function RF reverse amplifier
Product Reverse hybrids
Frequency 5-75 MHz 5-120 MHz 5-200 MHz
Gain (dB) 29.2 - 30.8 24.5 - 25.5 23.5 - 24.5
Type BGY68 BGY66B BGY67A
All available in SOT115 package.
Product highlight: CGD1046Hi

The CGD1046Hi with a high-output power level is primarily designed for use in fiber deep-optical-node applications (N+1/2/3). This 1 GHz hybrid amplifier solution offers an extended temperature range, high power overstress capabilities in case of surges, and high ESD levels resulting in a low cost of ownership. Its designed for durability and offering superior ruggedness.
` ` ` ` ` ` ` ` ` ` ` `
Features
High-output power High power gain for power doublers Extremely low noise Dark Green products GaAs HFET dies for high-end applications Rugged construction Superior levels of ESD protection Integrated ringwave protection Design optimized for digital channel loading Temperature compensated gain response Optimized heat management Excellent temperature resistance
16
1.3 TV and satellite

1.3.1 Network interface module (NIM) for TV reception
Application diagram
RF input
surge
VGA
CONVENTIONAL TUNER OR SILICON TUNER
RF SW WB LNA
RF output
brb403
Function Product 5 V silicon RF switch RF Switch / PLT switch MOSFET 3.3 V silicon RF switch Package SOT23 SOT143B SOT143R SOT343 SOT343R SOT143B SOT143R SOT343 SOT343R Type BF1107 BF1108 BF1108R BF1108W BF1108WR BF1118 BF1118R BF1118W BF1118WR Function Product 2-in-1 with band switch @5V MOSFET 2-in-1 @ 5 V 5V Package SOT363 SOT363 SOT343 Type BF1215 BF1216 BF1217
AGC control amplifier
Note: given that there is now an LNA before the MOSFET, the gain of these MOSFETs is made slightly lower and the cross-modulation higher. That way, the MOSFET would not constantly be under AGC even under nominal RF input level.
Product highlight: Save energy with BF11x8

The BF11x8 series are small signal, RF switching MOSFETs that can be used for switching RF signals up to 1 GHz. By using the BF11x8 series as an RF switch, you can save a considerable amount of energy. When a recording device (DVD-R, HDD-R, VCR, DVR) is powered off, viewers can still watch TV, although the antenna is looped via the recording device. Without the BF11x8, the antenna signal is lost.
When power to the recording device is on, the BF11x8 is open, so the RF signal travels via the recording device to the TV tuner. When power to the recording device is off, the BF11x8 closes. This ensures that the RF signal is looped through directly to the TV tuner and that TV reception is guaranteed. Energy is saved because the recording device can be powered off.
17
Function Product Wideband amplifier with gain levels of 5 and 10 dB, plus a bypass mode. Vsupply = 5 V Wideband amplifier with gain level of 10 dB and a bypass mode. Vsupply = 5 V Wideband amplifier with gain level of 10 dB and a bypass mode. Vsupply = 3.3 V Wideband amplifier with gain level of 10 dB. Vsupply = 5 V Wideband amplifier with gain level of 10 dB. Vsupply = 3.3 V LNA RF bipolar transistor Wideband transistor Package Type
SOT363
BGU7033^
SOT363
BGU7032^
VGA
MMIC
SOT363
BGU7042^
SOT363
BGU7031^
SOT363
BGU7041^
SOT143 SOT89
BFG520 BFG540 BFQ540
^ = This new series of LNA MMICs is designed specifically for high linearity (IP3O of 29 dBm), low noise applications like those in an active splitter or NIM tuner. Housed in a 6-pin SOT363 plastic SMD package, these MMICs are equipped with internal bias and matched to 75 internally. For the VGAs, current consumption is < 5 mA during the bypass mode. Only two external components are needed, thus saving precious circuit board space.
Product highlight: Make a high performance active splitter in a NIM tuner with BGU703x/ BGU704x
Today's TV tuners require complicated signal handling and benefit from flexibility in design. The front-end of a TV signal receiver is no longer just a tuned receiver, but has evolved into an RF Network Interface Module (NIM) with tuned demodulators, active splitters,
and remodulators. The active splitter requires an LNA with excellent linearity. NXP has developed two new series of LNA/VGA MMICs (BGU703x/BGU704x), designed especially for high linearity (P3O of 29 dBm) in low noise applications such as an active splitter in a NIM tuner. The BGU703x family operates at a supply voltage of 5 V and is intended for use with normal can tuners. The BGU704x family operates at 3.3 V and works seamlessly with our Si tuner ICs, which also operate at 3.3 V.
18
1.3.2
Basic TV tuner
Application diagram
RF input From antenna, cable, active splitter, etc.
MOSFET
VAGC
IF
bra500
Function Product VHF low Package SOD323 SOD523 SOD882D SOD323 SOD523 SOD523 SOD882D SOD882D SOD323 SOD882D SOD523 SOD523 Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT666 SOT666 SOT363 SOT363 SOT363 SOT666 Type BB152 BB182 BB182LX BB153 BB178 BB187 BB178LX BB187LX BB149A BB179LX BB179 BB189 Type BF1201 BF1202 BF1105 BF1211 BF1212 BF1102R BF1203 BF1204 BF1205 BF1205C BF1206 BF1207 BF1208 BF1208D BF1210 BF1214 BF1218 BF1206F Function Bandswitching Product Bandswitch diode Package SOD523 SOD523 SOD523 Package SOD323 SOD882D SOD523 SOD323 SOD882D SOD523 SOD882D SOD523 SOD323 SOD882D SOD523 SOD523 Package SOD323 SOD882D SOD523 SOD323 SOD882D SOD523 SOD882D SOD523 SOD323 SOD882D SOD523 SOD523 Package 2-in-1 with band switch @5V MOSFET 2-in-1 @ 5 V 5V SOT363 SOT363 SOT343 Type BA277 BA891 BA591 Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189 Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189 Type BF1215 BF1216 BF1217
Function
Product VHF low
Input filter
Varicap diode
VHF high
UHF
Bandpass filter
Varicap diode
VHF high
Function
Product
UHF
5V
Function
Product VHF low
RF pre-amplifier
MOSFET 2-in-1 @ 5 V
Oscillator
Varicap diode
VHF high
UHF
2-in-1 @ 3 V
Function
Product
RF pre-amplifier
Product highlight: BF1206F dual gate MOSFET double amplifier

The device consists of two dual gate MOSFET amplifiers in a small SOT666 flat lead package. The BF1206F is a true low power device specified for low voltage and low currents, intended for use in mobile applications where power consumption is critical. Performance is suitable for application at supply voltages of 3 V and drain currents of 4 mA.
` ` ` ` `
Features
Low-power specified Two amplifiers in one small SOT666 package Shared gate 2 and source leads Each amplifier is biased by an external bias resistor Excellent noise and cross-modulation performance
19
MOPLL IC
1.3.3
Satellite outdoor unit, low noise block (LNB) for multiple users
Looking for fully integrated mixer / oscillator / downconverter? See chapter 2.3.2 Complete satellite portfolio for all LNB architectures Application diagram
horizontal 1st antenna stage LNA 2nd stage LNA 3rd stage LNA
mixer
H low IF amplifier
low mixer BIAS IC
oscillator V low mixer IF amplifier H high IF amplifier (4 x 2) IF SWITCH
IF amplifier
IF out 1
vertical antenna
high
oscillator V high
IF amplifier
IF out 2
1st stage LNA
2nd stage LNA
3rd stage LNA
mixer
IF amplifier
brb022
Function Product RF bipolar transistor RF transistor Wideband transistor SiGe:C transistor Package SOT343 SOT343F SOT343F Type BFG424W BFG424F BFU710F BFU725F/N1 BFU730F Type BGA2711 BGA2712 BGA2748 BGA2714 BGA2717 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BFG424W BFG424F Type BAP64^ BAP51^ BAP1321^ BAP50^ BAP63^
Oscillator
Function
Product General purpose amplifier
Function
Product General purpose amplifier
1st stage IF amplifier
MMIC IF gain block
RF bipolar transistor Function Product
Wideband transistor
Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 SOT343F Package various various various various various
Output stage IF amplifier
MMIC IF gain block
Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 SOT343F
Type BGA2709 BGA2776 BGM1014 BGM1012 BGA2716 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BFG325 BFU710F BFU730F Type BFU710F BFU730F Type BFU710F BFU730F
RF bipolar transistor 2nd stage LNA RF transistor
Wideband transistor SiGe:C
Function 3 rd stage LNA Function Mixer
Product RF transistor Product RF transistor SiGe:C transistor SiGe:C transistor
Package SOT343F Package SOT343F
IF switch
RF diode
PIN diode
^ = also available in ultra small leadless package SOD882D.
Product highlight: BGA28xx-family of IF gain blocks

The BGA28xx IF gain blocks are silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifiers with internal matching circuit in a 6-pin SOT363 plastic SMD package.
` ` ` ` `
Features
No output inductor necessary when used at the output stage Internally matched to 50 Reverse isolation > 30 dB up to 2 GHz Good linearity with low second order and third order products Unconditionally stable (K > 1)
20
1.3.4
Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV
Application diagram
input amplifiers LNB satellite dishe(s)
output amplifiers coax out to STB SWITCH MATRIX FOR 4 4, NEEDS 16 (SINGLE) PIN DIODES coax out to STB coax out to STB coax out to STB
brb023
Function Input amplifier terrestrial Product General purpose medium power amplifier Package SOT89 SOT908 Package SOT363 SOT363 SOT363 SOT363 SOT343 SOT343 SOT143 SOT143 SOT343F Package Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7124 Type BGA2771 BGA2776 BGA2709 BGM1012 BFG325 BFG425W BFG520 BFG540 BFU725F/N1 BFU730F Type BAP50^ BAP51^ BAP63^ BAP64^ BAP70^ BAP1321^ BFU725F/N1 BFU730F
MMIC
Function
Product MMIC General purpose amplifier Wideband transistor SiGe:C transistor
Input amplifier LNB
Function
Product General purpose medium power amplifier General purpose amplifier Wideband transistor SiGe:C transistor
Package SOT89 SOT908 SOT363 SOT363 SOT363 SOT223 SOT223 SOT223 SOT143 SOT343F
RF bipolar transistor
MMIC Output amplifier
Function
Product
Switch matrix
RF diode
PIN diode
Various
RF transistor
SiGe:C transistor
SOT343F
Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7124 BGM1011 BGM1013 BGM1014 BFG135 BFG 591 BFG198 BFG540 BFU725F/N1 BFU730F
Product highlight: PIN diodes for switching matrix

In addition to delivering outstanding RF performance, this component simplifies design-in because of its extremely low forward resistance, diode capacitance, and series inductance. Significant board space is saved by supplying a range of highly compact package options including SOD523, SOD323 and leadless SOD882D.
` High isolation, low distortion, low insertion loss ` Low forward resistance (Rd) and diode capacitance (Cd) ` Ultra-small package options
Features
21
input terrestrial amplifier input terrestrial
1.3.5 VSAT
Application diagram
INDOOR UNIT POWER SUPPLY

IF IF1
OUTDOOR UNIT
PA
MOD
BUF
DIGITAL SIGNAL PROCESSOR
REF
MPX
to/from IDU
MPX
REF
SYNTH
PLL OMT ANTENNA
PMU
PMU
PLL
BUF
DATA INTERFACE
LNA
IF2
IF1
LNA2
LNA1 brb405
DEMOD
Recommended products Indoor unit

Function Product IF gain block IF MMIC General purpose wideband amplifiers Package SiGe:C transistor LNA RF transistor Wideband transistor SOT343R SOT143R SOT343F MMIC SOT363 Package Type BGA2800 BGA2801 BGA2815 BGA2816 BGM1012 BGA2714 BGA2748 BGA2771 Type BFU725F/N1 BFU710F BFU725F/N1 BFU730F BFG425W BFG424W BFG325/XR
Function
Product
22
Recommended products Outdoor unit

Function Product Package Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 BGA2714 Type BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGU7003 Type TFF1003HN TFF1007HN TFF11xxxHN^ Type BFG424W BFG425W BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F Type BB202 Type BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F
IF gain block IF
MMIC SOT363 General purpose wideband amplifiers Package
MMIC
Function
Product
LNA2
RF transistor
SiGe:C transistor
SOT343F
MMIC Function PLL Product RF IC
SiGe:C MMIC
SOT891 Package
SiGe:C IC
SOT616
Function
Product Wideband transistor
Package SOT343R
Oscillator
RF transistor SiGe:C transistor SOT343F
Function Synth Function
Product RF diode Product
Varicap diode
Package SOD523 Package
Buffer
RF transistor
SiGe:C transistor
SOT343F
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.4
Product highlight: TFF1003HN

The TFF1003HN is a Ku-band frequency generator intended for low phase noise Local Oscillator (LO) circuits for Ku-band VSAT transmitters and transceivers. The specified phase noise complies with IESS-308 from Intelsat.
` ` ` `
Features
Phase noise compliant with IESS-308 (Intelsat) LO generator with VCO range from 12.8 GHz to 13.05 GHz Input signal 50 MHz to 815 MHz Divider settings 16, 32, 64, 128 or 256
23
1.4 Portable devices

1.4.1 GPS
Application diagram
external active antenna BPF LNA
embedded antenna BPF LNA
SPDT
BPF
GPS RECEIVER IC
001aan955
Function SPDT Switch Product RF diode PIN diode Package various Type BAP64^ BAP1321^ BAP51^ Type BFU725F /N1 BFU710F BFU730F BGU7003 BGU7003W BGU7004 BGU7005 BGU7007 BGU7008
Function
Package SOT343F SOT891
LNA MMIC SiGe:C MMIC SOT886
^ = also available in ultra-small leadless package SOD882D.
Product highlight: BGU7007 SiGe:C LNA MMIC for GPS, GLONASS, and Galileo
The BGU7007 is a low noise amplifier (LNA) for GNSS receiver applications in a plastic, leadless, 6-pin, extremely-small SOT886 package. It requires only one external matching inductor and one external decoupling capacitor.
` ` ` ` ` ` ` ` ` `
Features
Covers full GNSS L1 band, from 1559 to 1610 MHz Noise figure (NF) = 0.85 dB Gain = 18.5 dB High 1 dB compression point of -12 dBm High out-of-band IP3i of 4 dBm Supply voltage 1.5 to 2.85 V Power-down mode current consumption < 1 A Optimized performance at low supply current of 4.8 mA Integrated temperature stabilized bias for easy design Requires only one input matching inductor and one supply decoupling capacitor
24
1.4.2
FM radio
Application diagram
LNA
embedded antenna LNA
SPDT
FM RECEIVER IC
001aan956
Function SPDT switch Product RF diode PIN diode Package various Type BAP64^ BAP 65^ BAP1321^ BAP51^ Type BFU725F /N1 BGU7003 BGU7003W
Function
Product RF transistor SiGe:C transistor SiGe:C MMIC
Package SOT343F SOT891 SOT886
LNA MMIC
^ = also available in ultra-small leadless package SOD882D.
Product highlight: BGU7003W MMIC wide band amplifier

The BGU7003W is a wideband amplifier in SiGe:C technology for high-speed, low noise applications. It is housed in a plastic, leadless, 6-pin, extremely-thin, small-outline SOT886 package.
` ` ` ` ` ` `
Features
Applicable between 40 MHz and 6 GHz High ohmic FM LNA: 13 dB gain and 1.1 dB NF at 100 MHz 50 FM LNA: 15 dB gain and 1.4 dB NF at 100 MHz Integrated temperature-stabilized bias for easy design Bias current configurable with external resistor Power-down mode current consumption < 1 A ESD protection > 1 kV Human Body Model (HBM) on all pins
25
headset antenna
1.4.3
Cellular receive
Application diagram
GSM/EDGE FE
GSM/ EDGE
SWITCH
PA BPF
TRANSCEIVER
duplexer
UMTS LTE
001aan957
Function LNA Product MMIC SiGe:C MMIC Package SOT891 SOT886 Type BGU7003 BGU7003W
Product highlight: BGU7003 MMIC wideband amplifier

The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high-speed, low noise applications. It is housed in a plastic leadless 6-pin extremely thin small outline SOT886 package.
` ` ` ` ` `
Features
Applicable between 40 MHz and 6 GHz LTE LNA: 1 dB NF, 18.5 dB gain and -5 dBm IIP3 at 750 MHz Integrated temperature stabilized bias for easy design Bias current configurable with external resistor Power-down mode current consumption < 1 A ESD protection > 1 kV Human Body Model (HBM) on all pins
26
1.4.4
802.11n WLAN (dual concurrent)
Application diagram
low pass lter antenna SPDT switch Tx medium power amplier
PActrl
APPLICATION CHIPSET
Rx bandpass lter LNA SPDT

bra502
Function Medium power amplifier Product MMIC Medium power amplifier Package SOT89 SOT908 Type BGA7024 BGA7027 BGA7124 BGA7127 Type BFU725F/N1 BFU730F BGU7003
Function LNA
Product RF Transistor MMIC SiGe:C transistor SiGe:C MMIC
Product highlight: BGA7127 MMIC medium power amplifier

The BGA7127 MMIC is a one-stage driver amplifier, offered in a low-cost ultra small SOT908 leadless package. It delivers 28 dBm output power at 1 dB gain compression and superior performance for various narrowband-tuned application circuits at frequencies up to 2700 MHz.
` ` ` ` ` ` `
Features
400 to 2700 MHz operating range 13 dB small signal gain at 2 GHz 28 dBm output power at 1 dB gain compression Integrated active biasing 3.3 / 5 V single supply operation Simple quiescent current adjustment 1 A shutdown mode
27
1.4.5
Generic RF front-end
Application diagram
antenna
filter
LNA
filter
mixer
buffer SPDT switch VCO LOW FREQUENCY CHIP SET
filter
PA
driver
VCO
bra850
Function SPDT Switch Product RF diode Bandswitch diode PIN diode Function Product Wideband transistor Package SOD523 SOD323 various various Package SOT23 SOT323 SOT323 Type BA277 BA591 BAP51^ BAP1321^ Type PBR951 PRF957 PRF947 BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGA2001 BGA2003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package Gen. purpose wideband ampl. Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7027 Type BB198 BB156
LNA
Function Power amplifier
Product
SiGe:C transistor
SOT343F
MMIC
SOT89
MMIC Function Product RF bipolar transistor MMIC
SOT343R Low noise wideband ampl. SOT343R Package SOT323 SOT23 SOT363 SOT363 SOT363
Function VCO
Product Varicap diodes
VCO varicap diodes
Package SOD523 SOD323
Driver
Wideband transistor Amplifier Gen. purpose wideband ampl.
^ = also available in ultra small leadless package SOD882D
Product highlight: BFU790F silicon NPN germanium microwave transistor

Silicon NPN germanium microwave transistor for high-speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
` Low noise, high linearity microwave transistor ` 110 GHz fT silicon germanium technology ` High maximum output power at 1 dB compression of 20 dBm at 1.8 GHz
Features
28
1.5 Automotive
1.5.1 Active antenna, e.g. SDARS, GPS
Application diagram
antenna
1st stage LNA 2nd stage LNA 3rd stage LNA
filter
CHIPSET
001aan958
Function 1st stage LNA Function 2nd stage LNA Product MMIC Low noise wideband amplifier Package SOT343R SOT343F Package SOT343F General purpose wideband amplifier SOT363 Type BGA2001 BGA2003 BFU730F Type BFU690F BGM1013 BGM1011 BGA2715 BGA2748 Type BFU690F BFU725F/N1 BFU790F BGU7003
Product
MMIC
Function 3 rd stage LNA
Product RF transistor MMIC SiGe:C transistor SiGe:C MMIC
Product highlight: BGU7003 MMIC wideband amplifier

Manufactured in NXPs latest SiGe:C process, this high frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, silicon-based alternative to GaAs devices, and offers higher integration and easier design-in than discrete bipolar transistors.
` ` ` ` ` `
Features
Low noise, high-gain microwave MMIC Maximum stable gain = 19 dB at 1.575 GHz 110 GHz fT-silicon germanium technology Optimized performance at low (5 mA) supply current Extremely thin, leadless 6-pin SOT891 package Integrated biasing and shutdown for easy integration
29
1.5.2
Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission
Application diagram
antenna receiver filter LNA filter mixer LOW FREQUENCY CHIP SET buffer VCO antenna transmitter filter PA driver VCO LOW FREQUENCY CHIP SET
bra851
Function Product RF bipolar transistor LNA MMIC Wideband transistor Package SOT23 SOT323 SOT323 Type PBR951 PRF957 PRF947 BGA2001 BGA2002^ BGA2003 BGU7003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Type BB148 BB149A BB198 BB156 Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package SOT323 SOT23 SOT363 SOT363 SOT363 SOT908 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 BGA7124
Low noise SOT343R wideband ampl. SiGe:C MMIC SOT891
Function
Product RF bipolar transistor MMIC
Driver
Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363 Package SOD323 SOD323 SOD523 SOD323
Function
Function VCO
Product Varicap diodes VCO varicap diodes
Power amplifier
^ = AEC-Q101 qualified (some limitations apply)
Product highlight: Varicap diodes as VCO

Varicap diodes are principally used as voltage varicap capacitors, with their diode function a secondary option. These devices are ideal for voltage controlled oscillators (VCOs) in ISM band applications.
` ` ` `
Features
Excellent linearity Excellent matching Very low series resistance High capacitance ratio
30
1.5.3
Tire pressure monitoring system
Application diagram
antenna filter PA driver VCO
SENSOR
brb216
Function Product RF bipolar transistor Wideband transistor Package SOT23 SOT323 SOT23 SOT323 SOT323 Package SOT323 SOT23 SOT363 SOT363 SOT363 Package SOD523 SOD323 Type BFR92A BFR92AW BFR94A^ BFR93AW BFR94AW^ Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Type BB198 BB156
PA
Function
Driver
Function VCO
Product Varicap diodes VCO varicap diodes
^ = AEC-Q101 qualified (some limitations apply)
Product highlight: BFR94AW silicon NPN transistor

Designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz, this silicon NPN transistor is housed in a plastic SOT323 (S-mini) package.
` ` ` `
Features
High power gain Gold metallization ensures excellent reliability SOT323 (S-mini) package AEC-Q101 qualified
31
1.5.4
Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)
Application diagram
FM input filter & AGC
1st mixer
IF bandpass filter
2nd mixer
variable BW filter
IF limiter FM deamplifier modulator f V FM MPX
AGC & hum filter AM LNA
oscillator
oscillator
DET RF input filter 1st mixer IF bandpass filter 2nd mixer IF bandpass filter IF AM deamplifier modulator
AM audio
bra501
Function AM LNA Function FM input filter & AGC ^ = OIRT Product RF transistor Product RF diode Varicap diode PIN diode JFET Package SOT23 Package SOT23 SOT23 SOD523 SOD323 Type BF862 Type BB201^ BB207 BAP70-02 BAP70-03 Function AGC & hum filter Function Oscillator Product RF diode Product RF diode Varicap diode PIN diode Package SOT363 Package SOD323 SOD523 Type BAP70AM Type BB156 BB208-02
Note 1: These recommended discrete products are applicable for NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684 6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H; DDICE:TEA6721HL. All recommended discrete products are applicable, excluding AM LNA in: DICE2:TEF6730HWCE.
Note 2: Phone and portable radio (IC:TEA5767/68) use varicap BB202 as FM oscillator.
Product highlight: BF862 junction field effect transistor

Our tuning portfolio contains excellent products for car radio reception applications and in-vehicle media platforms. The NXP devices for this application ensure excellent reception quality and ease of design-in. Performance is demonstrated in reference designs. The high performance junction FET BG862 is specially designed for AM radio amplifiers.
` High transition frequency and optimized input capacitance for excellent sensitivity ` High transfer admittance resulting in high gain ` Encapsulated in the versatile and easy to use SOT23 package
Features
32
1.6 Industrial, scientific & medical (ISM)

1.6.1 Broadcast / ISM (10 - 1500 MHz range)
Application diagram
typ. 0.5 kW DVB-T Driver stages
TV exciter DVB-T
typ. 5 kW DVB-T output power harmonic filter power monitor
8 final amplifiers
Recommended broadcast products

Function Driver fmin (MHz) 470 470 470 470 470 470 470 470 fmax (MHz) 860 860 860 860 860 860 860 860 P1dB (W) 7 24 30 70 75 90 110 120 D (%) 33 33 31 32 32 31 30 31 VDS (V) 50 42 50 50 42 42 50 50 Package SOT467C SOT467 SOT467 SOT539A SOT979A SOT1121 SOT539A SOT539A Type BLF642 BLF871(S) BLF881(S) BLF884P BLF878 BLF879P BLF888 BLF888A
Final
Recommended ISM products

Function fmin (MHz) 0 0 0 0 10 1 1 1 1 1 1 10 470 10 1400 10 470 470 88 10 10 10 fmax (MHz) 1000 1000 1500 1500 500 1400 1000 1000 1400 800 1500 500 860 500 1500 500 860 860 108 500 500 500 P1dB (W) 5 10 5 10 20 35 100 120 100 300 150 300 300 500 500 600 600 450 1000 500 1200 1200 VDS (V) 50 50 32 32 50 32 42 50 32 32 32 50 50 50 50 50 50 42 50 50 50 50 Package SOT1179 SOT1179 SOT1179 SOT1179 SOT467C SOT467C SOT467 SOT467 SOT540A SOT540A SOT1120 SOT502 SOT539A SOT1121A/B SOT539 SOT539A SOT539 SOT539A3 SOT539 SOT1240 SOT539A SOT539A Type BLP10H605 BLP10H610 BLP15M705 BLP15M710 BLF571 BLF642 BLF871 BLF881 BLF645 BLF647 BLF647P BLF573(S) BLF884P BLF573P BLF6G15L(S)-500H BLF574 BLF888A(S) BLF879P BLF178P BLF278XR BLF578 BLF578XR
Driver
Final
Product highlight: BLF888A LDMOS power transistor

NXPs 50 V high voltage LDMOS process enables highest power and unequalled ruggedness. The BLF888A (VSWR > 50:1) delivers the highest power level for digital broadcasting available to date.
` ` ` ` `
Features
Best broadband efficiency Highest power devices Unrivalled ruggedness Low-thermal resistance design for reliable operation Consistent device performance
33
1.6.2
E-metering, RF generic front-end with a single antenna / ZigBee
Application diagram
antenna
filter
LNA
filter
mixer
buffer SPDT switch VCO E-METERING CHIP SET
filter
MPA
driver
VCO
bra850
Function SPDT Switch Product RF diode Bandswitch diode PIN diode Function Product Package SOD523 SOD323 various various Package Type BA277 BA591 BAP51^ BAP1321^ Type BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGA2001 BGA2003 BGU7003 Type BFG425W BGA2031/1 BGA2771 BGA2776 Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package Wideband transistor Gen. purpose wideband ampl. SOT343 SOT89 SOT908 SOT908 Package SOD523 SOD323 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type BFG21W BGA6289 BGA6489 BGA6589 BGA7124 BGA7127 Type BB198 BB156
RF transistor LNA
SiGe:C transistor
SOT343F
Function
Product RF bipolar transistor
MMIC
Low noise wideband ampl. SiGe:C MMIC
SOT343R SOT343R SOT891 Package
Medium power amplifier
MMIC
Function
Driver
SOT343 SOT363 SOT363 SOT363
Function VCO
Product Varicap diodes
VCO varicap diodes
Product highlight: BGA7127 MMIC medium power amplifier

The BGA7127 MMIC is a one-stage driver amplifier, offered in a low-cost, ultra small SOT908 leadless package. It delivers 27 dBm output power at 1 dB gain compression and superior performance for various narrowband-tuned application circuits at frequencies up to 2700 MHz.
` ` ` ` ` ` `
Features
Operating range: 400 to 2700 MHz 16 dB small signal gain at 2 GHz 27 dBm output power at 1 dB gain compression Integrated active biasing 3.3 / 5 V single supply operation Simple quiescent current adjustment 1 A shutdown mode
1.6.3
RF Microwave furnace application
Application diagram
antenna
oscillator
MPA
HPA
CONTROLLER
isolator
brb418
Function Product Package SOT343R Type BFG410W BFG424W BFG425W BFG424F BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F P1dB (W) 4 10 12 20 140 180 200 250 250 Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* Package SOT1179 SOT1179 SOT975B SOT1138 SOT1179 SOT539 SOT502 SOT539 SOT1179 Type BLP25M74 BLP25M710 BLF25M612 BLM2425M720 BLP2425M8140 BLF2425M6L(S)180P BLF2425M7L(S)200 BLF2425M7L(S)250P BLP2425M8250P
Oscillator
RF transistor SOT343F
Function
Product
fmin (MHz) 1 1 1 2400 2400 2400 2400 2400 2400
fmax (MHz) 2500 2500 2500 2500 2500 2500 2500 2500 2500 Package SOT89
Driver HPA Final
Function
Product
MMIC
SOT908 SOT89 SOT908 SOT89 SOT908
Product highlight: New family for ISM 2.45 GHz

NXP's 6th and 7th generation LDMOS technology, along with advanced packaging concepts, enables power amplifiers that deliver best-in-class performance at 2.45 GHz. The unsurpassed ruggedness and low thermal resistance, along with the intrinsic efficiency of the LDMOS process, make these transistors ideally suited for the furnace application.
` ` ` `
Features
Excellent ruggedness Consistent device performance Low thermal resistance design for unrivalled reliability Ease of design
35
1.6.4
RF plasma lighting
Looking for more information on RF plasma lighting? See chapter 2.5.2 RF-driven plasma lighting: The next revolution in light sources are powered by solid-state RF technology
Application diagram
RF (plasma) bulb
oscillator
MPA
HPA
CONTROLLER
brb436
Function Product Package SOT143 SOT143 SOT23 SOT323 SOT323 SOT323 SOT343 SOT343 SOT363 SOT416 Package SOT89 MPA (medium power amplifier) MMIC SOT908 SOT89 SOT908 SOT89 SOT908 Type BFG520 BFG325/XR BFR520 BFR92AW BFR93AW BFS520 BFG520W BFG325W/XR BFM520 BFR520T Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130*
Oscillator
RF transistor
Function
Product
* = check status at 3.1 new products, as this type has not been released for mass production. Function Product Driver fmin (MHz) 10 10 10 10 10 10 10 10 10 10 10 10 2400 2400 2400 2400 2400 fmax (MHz) 500 500 500 500 500 500 1000 1000 1000 1000 2500 2500 2500 2500 2500 2500 2500 P1dB (W) 20 300 500 500 1000 1000 10 100 120 300 4 12 140 180 200 250 250 Package SOT467C SOT502A SOT539A SOT1240 SOT539A SOT539A SOT1179 SOT467C SOT1138 SOT1138 SOT1179 SOT975B SOT1179 SOT502 SOT502 SOT539 SOT1179 Type BLF571 BLF573(S) BLF574 BLF278XR BLF578 BLF578XR BLP10H610 BLF871(S) BLP10H6120 BLP10H6300P BLP25M74 BLF25M612 BLP2425M8140 BLF2425M7L(S)180 BLF2425M7L(S)200 BLF2425M7L(S)250P BLP2425M8250P
Final
Driver HPA Final Driver
Final
Product highlight: LDMOS enables RF lighting

NXP's 50 V high voltage LDMOS process enables highest power at the unprecedented ruggedness levels necessary for this kind of application. BLF578: 1000 W CW operation - highest power LDMOS
` ` ` ` `
Features
Highest power device Unprecedented ruggedness Low-thermal resistance design for reliable operation Consistent device performance Broadband device for flexible use
36
1.6.5
Medical imaging
Looking for more information on medical applications? See chapter 2.5.1 Medical applications driven by RF power: From imaging to cancer treatment, a flexible and versatile technology in the doctors toolbox
Magnet
X GRADIENT AMPLIFIER
Gradient coils RF coils
Y GRADIENT AMPLIFIER
WAVEFORM GENERATOR
Z GRADIENT AMPLIFIER
RF amplifier
RF ELECTRONICS
ADC
COMPUTER IMAGE DISPLAY

brb434
Function Product Driver fmin (MHz) 10 10 10 10 10 10 10 10 10 10 10 10 2400 2400 2400 2400 2400 fmax (MHz) 500 500 500 500 500 500 1000 1000 1000 1000 2500 2500 2500 2500 2500 2500 2500 P1dB (W) 20 300 500 500 1000 1000 10 100 120 300 4 12 140 180 200 250 250 Package SOT467C SOT502A SOT539A SOT1240 SOT539A SOT539A SOT1179 SOT467C SOT1138 SOT1138 SOT1179 SOT975B SOT1179 SOT502 SOT502 SOT539 SOT1179 Type BLF571 BLF573(S) BLF574 BLF278XR BLF578 BLF578XR BLP10H610 BLF871(S) BLP10H6120 BLP10H6300P BLP25M74 BLF25M612 BLP2425M8140 BLF2425M7L(S)180 BLF2425M7L(S)200 BLF2425M7L(S)250P BLP2425M8250P
Final
Driver HPA Final Driver
Final
Product highlight: LDMOS in emerging medical applications

NXPs line of 50 V high voltage LDMOS devices enables highest power output and features unequalled ruggedness for pulsed operation in MRI and NMR applications. The high power densities enable compact amplifier design.
` ` ` `
Features
Best broadband efficiency Highest power (density) devices Unrivalled ruggedness Consistent device performance
37
Application diagram
1.7 Aerospace and defense

1.7.1 Microwave products for avionics, L- and S-band radar applications
Application diagram
RF signals
video, timing, bias voltage, control and data I-f signals RF small signal RF power PLL VCO local oscillator
mixer VGA MPA
RF POWER BOARD
HPA
ISOLATOR
ANTENNA DRIVE
duplexer
DISPLAY AND CONTROL
WAVEFORM GENERATOR control and timing video DETECTOR
local oscillator signal
PLL VCO
mixer
IF amplifier
LNA
brb410
Function Product Driver fmin (MHz) 1030 1030 1030 1030 960 1030 960 1030 960 500 1200 500 1200 1200 1200 2700 3100 2700 2900 2700 3100 2700 2900 2900 2700 3100 2900 2700 fmax (MHz) 1090 1090 1090 1090 1215 1090 1215 1090 1215 1400 1400 1400 1400 1400 1400 3100 3500 3500 3300 3100 3500 3100 3300 3300 2900 3500 3300 3100 P1dB (W) 2 10 200 200 250 300 500 600 1000 25 35 130 250 250 500 6 20 30 100 120 120 130 130 150 350 350 200 200 Package SOT538A SOT467C SOT502A SOT502A SOT502A SOT957A SOT634A SOT539A SOT539A3 SOT467C SOT467C SOT1135 SOT502A SOT502 SOT539A SOT975C SOT608 SOT1135 SOT502A SOT502 SOT502 SOT922-1 SOT922-1 SOT922-1 SOT539 SOT539 pallet pallet Applications Avionics Avionics Avionics Avionics Avionics Avionics Avionics Avionics Avionics L-band L-band L-band L-band L-band L-band S-band S-band S-band S-band S-band S-band S-band S-band S-band S-band S-band S-band S-band Type BLA1011-2 BLA1011-10 BLA6G1011-200R BLA6G1011LS-200RG BLA0912-250R BLA1011-300 BLA6H0912-500 BLA6H1011-600 BLA6H0912-1000 BLL6H0514-25 BLL1214-35 BLL6H0514L(S)-130 BLL6G1214L-250 BLL6H1214L(S)-250 BLL6H1214-500 BLS6G2731-6G BLS6G3135(S)-20 BLS6G2735L(S)-30 BLS2933-100 BLS6G2731(S)-120 BLS6G3135(S)-120 BLS6G2731S-130 BLS6G2933S-130 BLS7G2933S-150 BLS7G2729L(S)-350P BLS7G3135L(S)-350P BLS6G2933P-200 BLS6G2731P-200
Final
Driver
Final HPA Driver
Final
38
Function Discrete attenuator
Product RF diode PIN diode
Package Various^
Type BAP64
^ = SOD523, SOD323, SOT23 & SOT323 Function LNA (low noise amplifier) & Mixer Function Product RF transistor SiGe:C transistor Package SOT343F Type BFU710F BFU725F/N1 BFU730F
MMIC IF amplifier MMIC General purpose wideband amplifiers Function PLL/VCO LO generator Function Single VGA (variable gain amplifier) Function Dual VGA (variable gain amplifier) Function MPA (medium power amplifier) Product RF IC SiGe:C IC Package SOT616 SOT363
BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 Type TFF1003HN TFF1007HN TFF11xxxHN^ Type BGA7202 BGA7204 Type BGA7350 BGA7351 Type BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130*
Product MMIC Product MMIC Product
Gain range 23 dB 31 dB Gain range 24 dB 28 dB PL (1 dB) @ 940 MHz 21 dBm 25 dBm 24 dBm 28 dBm 28 dBm 30 dBm
Package SOT617 Package SOT617 Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908
MMIC
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.4
Product highlight: NXP launches high quality pallets for S-band

The BLS6G2933P-200 is the first LDMOS-based, industry-standard pallet available on the market. This pallet offers more than 40% efficiency, includes the complete bias network and can be used as direct replacement for current solutions.
` ` ` ` `
Features
P1 dB > 200 W Efficiency > 40% Industry-standard footprint 50 in/out matched for entire bandwidth Lightweight heat sink included
39
Product
Package
Type
2. Focus applications, products & technologies

2.1 Wireless communication infrastructure
2.1.1 VGAs with superior linearity for enhanced system performance
NXP variable gain amplifiers BGA7202/4, BGA7350/1 Manufactured in NXPs innovative QUBiC4 process, these VGAs deliver more on-chip functionality in less space, and meet the most demanding requirements for system performance.
Key features ` BGA720x: transmit VGAs - Frequency band: 700 to 2200 or 2750 MHz - Gain range: 23 or 31.5 dB - OIP3: +36 dBm/110 mA (BGA7202), +41 dBm/520 mA (BGA7204) @ minimum attenuation ` BGA735x: dual receive IF VGAs - Frequency band: 50 to 250 MHz - Gain range: 24 or 28 dB - OIP3: +44 dBm/245 mA or higher @ minimum attenuation - Gain flatness: 0.1 dB - Differential phase error: 0.1 degrees ` Best-in-class linearity (OIP3) at low power consumption ` ESD protection > 2 kV HBM and > 1.5 kV CDM on all pins ` HVQFN32 leadless packages (5 x 5 mm) Key applications ` Wireless infrastructure base stations ` Multi-carrier systems These high performance variable gain amplifiers (VGAs) support multiple frequency bands and the latest air interfaces. They offer best-in-class linearity, very low power consumption, high immunity to out-of-band signals, spurious performance, and output power. They are ideally suited for GSM, W-CDMA, WiMAX, LTE base-station infrastructure, and multi-carrier systems. The BGA7202 and BGA7204 are RF VGAs used in the transmit path. The BGA7202 offers an output third-order intercept (OIP3) of +45 dBm and 27 dB of attenuation. The attenuation is controlled by means of an analog interface. The BGA7204 provides an OIP3 of +37 dBm and 32 dB of attenuation. The attenuation is controlled by means of a digital interface. In addition, the gain curve of the BGA7204 can be programmed via an SPI interface. The BGA7350 and BGA7351 are dual, independently controlled receive IF VGAs that operate from 50 to 250 MHz. Integrated matching improves performance in the receiver chain, because the VGA can drive the filter directly into the analog-to-digital converter to ensure a constant input level. The BGA7350 has a gain range of 24 dB, while the BGA7351 has a range of 28 dB. For both devices, the maximum gain setting delivers 18 dBm output power at 1 dB gain compression (P1dB), with superior linear performance and overdrive performance up to +20 dBm. For gain control, each amplifier uses a separate digital gain-control code, which is provided externally through two sets of five bits. The resulting gain flatness is 0.1 dB. Other features All four devices are RoHS-compatible and available in space-saving HVQFN32 leadless packages that measure just 5 x 5 mm. They are unconditionally stable devices that offer ESD protection at all pins and meet moisture sensitivity level 1.
40
State-of-the-art QUBiC4 NXPs industry-leading QUBiC4 technology, available since 2002, has been widely deployed in the field and offers more consistent parameter performance compared to GaAs technology. It speeds the migration from GaAs to silicon and delivers more functionality in less space. High integration reduces the design footprint and enables more cost competitive designs. It also improves reliability and offers significant savings in manufacturing expenditures.
Complete signal chain NXP is one of the very few companies that supplies products for the complete signal chain from analog mixed-signal components such as ADCs and DACs to RF small signal devices and high-power RF amplifiers. This system-level approach allows engineers to purchase products that work well together as part of the overall system design, and makes it easier for designers to optimize performance in today's wireless infrastructure. Furthermore, since NXP has in-house access to all the core IP, the company is positioned to support even higher levels of integration in the future.
Selection guide
Gain @ minimum attenuation
Gain (dB) 23 23 18 17 16 18.5 22 OIP3 (dBm) 41 41 38 36 34 44 45 NF (dB) 7 7 6.5 6.5 7.5 6 6
@ maximum attenuation
Gain (dB) 0 0 -13.5 -13.5 -13.5 -5.5 -6 OIP3 (dBm) 30 30 10 10 10 50 50 NF (dB) 30 30 38 38 38 30 34
Vsup Type Package Control interface (V)
Isup (mA)
Frequency (MHz) 700 to 1450
range (dB) 23 23 31.5 30.5 29.5 24 28
BGA7202
SOT617
Analog
530 1450 to 2200 700 to 1450
BGA7204
SOT617
Parallel, serial, digital
110
1450 to 2100 2100 to 2750
BGA7350 BGA7351
SOT617 SOT618
Parallel, digital Parallel, digital
5 5
245 250
50 to 250 50 to 250
41
2.1.2
Doherty amplifier technology for state-of-the-art wireless infrastructure
Best-in-class PA designs enable considerable energy savings NXPs latest power amplifier designs let the wireless infrastructure run with significantly higher energy efficiency towards Green Base Stations. In order to achieve the highest efficiencies currently possible, NXP combines its latest generations of LDMOS technology (Gen7 & 8) with the Doherty concept. The high performance of our LDMOS technology, matched with the efficiency of the Doherty technology, creates power amplifiers that offer high efficiency, high gain, are easily linearizable, and are more cost-effective to operate. Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely unused because the dominant mobile communication system modulation techniques (FM, GMSK, and EDGE) did not require high peak-toaverage ratio (PAR) signals. For today's base stations, however, transmitting 3G, 4G, and multi-carrier signals makes the high power and added efficiency of the Doherty approach the preferred option for most service providers. NXPs Doherty designs ensure high efficiency while maintaining a very similar peak power capability of two transistors combined. The input and output sections are internally matched, benefiting the amplifiers with high gain, good gain flatness, and phase linearity over a wide frequency band.
Integrated Doherty NXP can even offer the worlds first fully integrated Doherty designs. From the outside these devices look like ordinary transistors. In fact, they are completely integrated Doherty amplifiers that readily deliver the associated high efficiency levels for base station applications. With the ease of design-in of an ordinary Class AB transistor, they also provide significant space and cost savings. Key features & benefits ` Contains splitter, main and peak amplifier, delay lines, and combiner in one package - 40% efficiency @ 10 W average power - no additional tuning in manufacturing ` Design is as easy as with a single Class AB transistor ` Ideally suited for space-constrained applications (e.g. remote radio heads, antenna arrays) ` Currently available for TD-SCDMA (BLD6G21L(S)-50) and W-CDMA (BLD22L(S)-50); see chapter 3.7.1.4 for details
42
Discrete Doherty amplifiers In addition to the integrated versions, NXP offers product demonstrators for very efficient, high-power, discrete two- and three-way Doherty amplifiers. The two-way designs, based on the BLF7G22LS-130 device, deliver 47.0 dBm (50 W) with 43% efficiency and 15.7 dB gain for W-CDMA applications.
All of our product demonstrators are supported by comprehensive documentation and hardware. Please see chapter 3.7.1.7 for a complete list of available designs. Our flagship three-way Doherty demonstrator even achieves 48% efficiency at 48 dBm (63 W) average output power and 15.0 dB gain with a two-carrier W-CDMA signal. The current design covers the W-CDMA standard for band 1 operation and is tailored towards high-yield, minimum-tuning, volume manufacturing.
Featured Doherty designs

Freq band (MHz) 728-768 920-960 1476-1511 1805-1880 1930-1990 2110-2170 2110-2170 2300-2400 2500-2700 3400-3600 PPEAK (dBm) 58 57.3 58.1 58.6 58.2 47 57.2 55 50.3 51 POUT-AVG (dBm) 50 49.3 49.6 51 50 39 49.2 47.5 42.3 43 VDS (V) 32 30 28 28 28 28 28 28 28 28 Gain (dB) 20.5 16 16 16 16 13 16 15.2 14.5 11.5 Drain Eff. (%) 47 50 42 47.6 40 38 47 44 39 32 Type SYM ASYM ASYM 3-WAY SYM SYM 3-WAY ASYM SYM SYM Main transistor BLF6G10LS-200RN BLF8G10LS-160 BLF7G15LS-200 BLF7G20LS-200 BLF7G20LS-250P BLD6G22L(S)-50 BLF7G22LS-160 BLF7G24LS-100 1/2 BLF7G27LS-90P BLF6G38-50 Peak transistor BLF6G10LS-200RN BLF7G10LS-250 BLF7G15LS-300P 2x BLF7G20LS-200 BLF7G20LS-250P BLD6G22L(S)-50 2x BLF7G22L(S)-160 BLF7G24LS-140 1/2 BLF7G27LS-90P BLF6G38-50
43
Key features & benefits ` Most efficient Doherty amplifier designs available to date ` Production-proven, consistent designs ` NXPs LDMOS provides unsurpassed ruggedness ` Currently available for the following frequency bands: - 728 to 821 MHz - 869 to 960 MHz - 1805 to 1880 MHz (DCS) - 1930 to 1990 MHz (PCS) - 1880 to 2025 MHz (TD-SCDMA) - 2110 to 2170 MHz (UMTS / LTE) - 2300 to 2400 MHz (WiBRO / LTE) - 2500 to 2700 MHz (WiMAX / LTE) - 3300 to 3800 MHz (WiMAX)
2.1.3
The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8
NXP recently announced the 8th generation of its renowned RF power device portfolio for base stations. Listening carefully to the worlds leading infrastructure providers and understanding their requirements, a holistic approach was taken during the development of Gen8. This basically means that we scrutinized every little detail of a power transistor and reconsidered the entire transistor system to come up with a new generation, which performs markedly better than its predecessors and again sets standards for the industry.
Gen8 clearly addresses the key trends in the wireless infrastructure industry ` Increasing signal bandwidths up to 100 MHz ` Cost sensitivity ` Reduction in the size/weight/volume of the cabinet ` Continuous need for greater electrical efficiency to reduce cooling requirements and operational expenditure ` Ever increasing output power to unprecedented levels ` Need to deploy multi-standard and future-proof solutions Gen8 is the answer to all these often conflicting requirements. The package and die design, as well as input and output match structures, have been optimized to enable wideband, affordable, compact, multi-standard and highly efficient Doherty power amplifiers. The first wave of Gen8 transistors is deployed for applications up to 960 MHz with excellent linearization capabilities, stateof-the-art ruggedness and efficiencies in excess of 55% for multicarrier GSM PAs. The second wave of products covers WCDMA-LTE applications at 2.1 GHz. Solutions for all other cellular frequency bands are currently being developed.
The first wave of Gen8 transistors

Function Type BLF8G10L-160 BLF8G10L-300P BLF8G10L-320 HPA BLF8G10L-80 BLF8G10LS-160 BLF8G10LS-300P BLF8G10LS-320 BLF8G10LS-80 44 fmin (MHz) 700 700 700 700 700 700 700 700 fmax (MHz) 1000 1000 1000 1000 1000 1000 1000 1000 P1dB (W) 160 300 320 80 160 300 320 80 Package SOT502A SOT539A SOT502A SOT502A3 SOT502B3 SOT539B SOT502B3 SOT502B Planned release Q311 Q112 Q112 Q411 Q311 Q112 Q112 Q411 Description Gen8 ceramic LDMOS transistor for GSM & LTE applications Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications Gen8 ceramic LDMOS transistor for GSM & LTE applications Gen8 ceramic LDMOS transistor for GSM & LTE applications Gen8 ceramic LDMOS transistor for GSM & LTE applications Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications Gen8 ceramic LDMOS transistor for GSM & LTE applications Gen8 ceramic LDMOS transistor for GSM & LTE applications
2.2 Broadband communication infrastructure

2.2.1 Connecting people, protecting your network : NXP's CATV C-family for the Chinese SARFT standard Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP's CATV C-family offers you a total solution for cable TV networks. It is both flexible enough for connecting rural communities as part of Chinas "Connecting every village" program and powerful enough for upgrading major cities from analog to high-end digital services. All C-type devices are compliant with the Chinese State Administration for Radio,
Film and Television (SARFT) standard, and cover most HFC applications in the 550 MHz to 1 GHz range.
Products ` BGY588C, BGE788C and CGY888C push-pull amplifiers ` BGD712C, CGD944C, CGD942C, CGD982HCi, CGD985HCi and CGD987HCi power doublers ` BGO807C, BGO807CE optical receivers Benefits ` ` ` ` Compliant with Chinese SARFT HFC networks standard Transparent cap allows confirmation of product authenticity Rugged construction Highest by Design internal ESD protection The BGY588C, BGE788C and BGD712C devices cover the frequency range from 550 MHz to 750 MHz. Extending the C-family portfolio into the high-end segment, the CGD944C, CGD942C, CGY888C and BGO807C operate between 40 MHz and 870 MHz and have been specifically tested under Chinese raster conditions. Manufactured using our GaAs HFET die process, the CGD942C and CGD944C are high-gain, high-performance 870 MHz power doublers. The CGD982HCi, CGD985HCi and CGD987HCi operate from 40 MHz to 1003 MHz and are specified for 870 MHz and 1 GHz. These power doublers are optimized for the Chinese SARFT standard. They are capable of satisfying the demanding requirements of top-end applications including high-power optical nodes. Our GaAs HFET MMIC dies are providing by design the best ESD protection levels with no needs for the external TVS components normally used with GaAs pHEMT devices. All CATV C-type devices feature a transparent cap that makes it easy to distinguish them from counterfeit products.
Features ` ` ` ` ` Excellent linearity, stability and reliability High power gain Extremely low noise Silicon nitride passivity GaAs HFET dies for high end devices
Further extending our high quality CATV portfolio, this new family lets you address an even wider range of HFC applications. Dedicated solutions for the implementation of CATV systems in China, our C-type devices deliver the performance you need for modern TV infrastructures.
C-family application information NXP C-family by application

Application Optical node Ordinary optical receiver Distribution amplifier Line extender amplifier Terminating amplifier
BGY588C
BGE788C
CGY888C
BGD712C
BGO807C BGO807CE
CGD942C CGD944C
CGD982HCi CGD985HCi CGD987HCi
BGY588C, BGE788C and CGY888C The last stage of an HFC network structure is called a terminating amplifier or user amplifier as it is close to the subscribers. Each terminating amplifier requires a single module such as BGY588C for 550 MHz, BGE788C for 750 MHz and CGY888C for 870 MHz systems. These modules are fitting perfectly in the Chinese "Connecting to Every Village" projects.
IN port PAD EQ OUT port
bra820
BGY588C BGE788C CGY888C
BGD712C The BGD712C is a 750 MHz, 18 dB power doubler module. It has been designed for 750 MHz optical nodes including ordinary or optical receivers and distribution amplifiers. It can also be used in line extender amplifiers together with a 750 MHz push-pull module, such as BGY785A or BGY787. As such it can be used widely in Chinese "Connecting to Every Village" projects.
IN port PAD EQ OUT port
bra821
BGY785A BGY787
BGD712C
CGD944C and CGD942C Our full GaAs power doublers modules, CGD942C and CGD944C offer high output power and better CTB and CSO than other modules. Designed for high-end HFC networks containing optical nodes with multiple out-ports, these modules enable each port to directly cover at least 125 subscribers. These two devices are ideal when used in upgrading HFC networks to 870 MHz.
BGO807C BGO807CE (N + 1)
CGD94xC / CGD98xHCi
PAD H L OUT port 1
CGD94xC / CGD98xHCi
PAD PAD EQ H L OUT port 2
CGD94xC / CGD98xHCi
PAD H L OUT port 3
RF switch
CGD982HCi, CGD985HCi and CGD987HCi Our newest GaAs power doubler modules, CGD982HCi, CGD985HCi and CGD987HCi are customized designs for CATV hybrid fiber coax Chinese networks operating in the 40 MHz to 1003 MHz bandwidth, and specified with the Chinese cable TV network official loading raster on top of the NTSC loading traditional rasters. For use in optical notes for fiber deep applications where the output power level needs to be at its highest.
CGD94xC / CGD98xHCi
BGO807C BGO807CE PAD H L OUT port 4
bra822
BGO807C The BGO807C is an integrated optical receiver module that provides high output levels and includes an integrated temperature compensated circuitry. In your optical node design, BGO807C enables a high performance / price ratio and ruggedness. When upgrading an HFC network from analog to digital, our BGO807C is the perfect fit.
BGD812
BGO807C BGO807CE
BGY885A
BGD812
PAD H L OUT port 2
bra823
46
Connecting people, protecting your network

NXP CATV C-family for the Chinese SARFT standard Push-pull amplifiers
Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ f max) (dB) Total current consumption (mA) Frequency range (MHz) typ. range max. max. max. typ. range BGY588C 34.5 0.2 - 1.7 -57 -62 8 325 40 - 550 BGE788C 34.2 0.3 - 2.3 -49 -52 8 305 40 - 750 CGY888C 35.5 1.5 typ. -68 typ. -66 typ. 4 typ. 280 40 - 870
Power doublers
Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2 order distortion (dB)
nd
BGD712C typ. range max. max. max. typ. range 18.5 0.5 - 1.5 -62 -63 7 395 40 - 750
CGD942C 23 1-2 -66 typ. -66 typ. 5 450 40 - 870
CGD944C 25 1-2 -66 typ. -66 typ. 5 450 40 - 870
CGD982HCi 23 0.5 - 2 -66 -69 5.5 440 40 - 1003
CGD985HCi 24.5 0.5 - 2 -66 -69 5.5 440 40 - 1003
CGD987HCi 27 0.7 - 2 -66 -66 5.5 440 40 - 1003
Noise (@ f max) (dB) Total current consumption (mA) Frequency range (MHz)
Optical receiver
Parameters Responsivity (Rmin) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ f max) (dB) Total current consumption (mA) Frequency range (MHz) Connector min. range max. typ. max. typ. range BGO807C 800 0-2 -71 -54 8.5 190 40 - 870 - / SC0 / FC0 BGO807CE 800 0-2 -69 -53 8.5 190 40 - 870
47
2.2.2
Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks
NXP high gain power doublers CGD104xHi and push-pulls CGY104x Designed for 1 GHz sustainable networks, these high performance GaAs devices enable extended bandwidth and higher data rates. They deliver increased network capacity and make way for highend services like HDTV, VoIP, and digital simulcasting.
New CATV GaAs platform lay-out
Key features ` Excellent linearity, stability, and reliability ` High power gain for power doublers ` Extremely low noise ` Dark Green products ` GaAs HFET dies for high-end applications ` Rugged construction ` Superior levels of ESD protection ` Integrated ringwave protection ` Design optimized for digital channel loading ` Temperature compensated gain response ` Optimized heat management ` Excellent temperature resistance Key benefits ` Simple upgrade to 1-GHz capable networks ` Low total cost of ownership ` High power-stress capability ` Highly automated assembly Key applications ` Hybrid Fiber Coax (HFC) applications ` Line extenders ` Trunk amplifiers ` Fiber deep-optical-node (N+0/1/2) ` Bridgers
The NXP power doublers CGD104xH and CGD104xHi are ideal for use in line extenders and trunk amplifiers. They support fiber deep-optical-node applications (N+0/1/2), delivering the highest output power on the market today. The GaAs HFET die process delivers high gain, excellent CTB and CSO ratings, along with lower current. The new NXP CGY1047x push-pull family is the first line-up on the market combining very low noise, best-in-class distortion parameters, and low, carbon footprint capabilities. It delivers the best performance for the lowest power consumption, so it reduces OPEX and CO2 emissions All of NXPs 1 GHz solutions are designed for durability and offer superior ruggedness, an extended temperature range, high power overstress capabilities, and extremely high ESD levels. As a result, they also reduce the cost of ownership. The GaAs die is inserted in an HVQFN package that is then mounted on thermal vias that manage heat transfer to the heat sink. Temperature-control circuitry keeps the modules high performance stable over a wide range of temperature. Assembly is fully automated and requires almost no human intervention, so repeatability remains very high.
48
Upcoming products Additional push-pulls, currently under development, will extend the capabilities of the power doublers even further, supporting almost all modern HFC applications. The push-pull CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of 23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of
32 dB. NXP is also developing a new, highly integrated power doubler. The CGD1046Hi will deliver, in one IC, a 26 dB power gain with 60 dBmV output power and excellent ESD protection, for the ultimate in high quality, distortionless devices.
Quick reference data CATV 1 GHz power doublers and push-pulls

CATV 1- GHz power doublers Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2 order distortion (dB)
nd
CGD1040Hi typ. typ. typ. typ. max typ. range 21 1.5 -69 -68 6 440 40 - 1003
CGD1042H 23 1.5 -69 -68 6 450 40 - 1003
CGD1042Hi 23 1.5 -69 -68 6 440 40 - 1003
CGD1044H 25 1 -69 -68 6 450 40 - 1003
CGD1044Hi 25 1.5 -69 -68 6 440 40 - 1003
CGD1046Hi
0.5 - 2.0 -73 -68 5 460 40 - 1003
Noise (@fmax) (dB) Total current consumption (mA) Frequency range (MHz)
CATV 1-GHz push-pulls Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@fmax) (dB) Total current consumption (mA) Frequency range (MHz) typ. typ. typ. typ. max. typ. range CGY1041 22 2 -62 -64 5 250 40 - 1003 CGY1043 24 2 -62 -64 5 250 40 - 1003 CGY1047 28 2 -64 -66 4.5 250 40 - 1003 CGY1049 30 1.6 -62 -64 5 250 40 - 1003 CGY1032 33 1.8 -62 -64 5 265 40 - 1003
CGD104xHi
PAD H L OUT port 1
CGD104xHi
CGD104xHi
PAD H L OUT port 3
(N + 1)
RF switch
CGD104xHi
PAD H L OUT port 4
bra822
An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi NXP Semiconductors RF Manual 15th edition 49
27
2.3 TV and satellite

2.3.1 LNAs for TV/STB tuners with programmable gain
NXP LNAs for STBs BGU703x for 5 V and BGU704x for 3.3 V supply voltage This family of 5 V and 3.3 V wideband, low noise amplifiers is specifically designed for high linearity, low noise performance for TV, DVR/PVR, set-top box tuner applications from 40 MHz to 1 GHz. The unique is programmable gain compensates for tuner switch signal loss, which is becoming more important following the trend of more tuners in one system, and improves overall system performance with 7-10 dB.
Key features ` Equipped with internal bias ` Programmable gain and bypass modes ` Flat gain between 40 MHz and 1 GHz ` Noise figure = 4 dB ` High linearity: IP3O = 29 dBm ` 75 input and output impedance ` Power-down during bypass mode (current consumption < 5 mA) ` ESD protection > 2 kV human body model (HBM) on all pins Key applications ` Terrestrial and cable STBs ` Silicon and can tuners ` Personal and digital video recorders (PVRs, DVRs) ` Home networking and in-house signal distribution ` FM radios ` Antenna amplifiers In set-top boxes that use multiple or network-interfaced module (NIM) tuners, the RF signal usually needs to be distributed or split. Very often, a low noise amplifier (LNA) is used to compensate for signal loss when the signal is split with a balun core. The NXP BGU703x/BGU704x are LNA MMICs produced in an SiGe:C process. All five products in the series are matched to 75 at both the input and the output, for easier use. The BGU703x are suitable for supply voltages of 5 Volts and the BGU704x for 3.3 Volts. The BGU7031 and BGU7041 are LNAs with fixed gain. The BGU7032 and BGU7042 have an additional bypass mode. The BGU7033 has two gain levels (GP = 10 dB or 5 dB) and the bypass mode. All five devices are designed for high linearity and low noise over a frequency range of 40 MHz to 1 GHz. They can be used in conventional can tuners or with silicon tuner ICs. Compared to GaAs solutions, they are less susceptible to ESD and offer a cost savings of more than 50 percent. Integrated biasing and switching functions reduce the number of external components from roughly 17 to just two or three. By comparison, a discrete LNA design would typically require six to nine external components and, to realize the bypass function, would need an extra four pin diodes and at least eight additional passive components. Each MMIC in the BGU703x/BGU704x are housed in a 6-pin SOT363 (SMD) package. Each offers a flat gain between 40 MHz and 1 GHz, so theres no gain fluctuation over the typical frequency range. The low noise figure of 4 dB reduces overall tuner noise, and the high linearity (IP3O = 29 dBm) minimizes distortion. The input and output impedance is adapted to the application (75 ), so theres no need for external matching. To save power, the ICs can be powered-down during bypass mode, for a total current consumption of less than 5 mA. Also, to protect the LNA from external electrical discharge in its function as the tuner input, every pin is equipped with ESD protection of >2 kV human body model (HBM).
50
LNAs for set-up boxes (75 )

Type Package Frequency range (MHz) GP 10 dB BGU7033 SOT363 40 - 1000 GP 5 dB Bypass BGU7032 SOT363 40 - 1000 GP 10 dB Bypass @ Mode VCC (V) 5 5 5 5 5 ICC (mA) 43 43 4 43 4 Gain (1) (dB) 10 5 -2 10 -2 NF (dB) 4.5 6 2.5 4.5 2.5 PL (1dB) (dBm) 14 9 14 OIP3 (dBm) 29 29 29 29 29 FL (2) (dB) -0.2 -0.2 -0.2 -0.2 -0.2 RLout (dB) 12 12 8 12 8 RLin (dB) 18 17 8 18 8
BGU7031
SOT363
40 - 1000
GP 10 dB
43
10
4.5
14
29
-0.2
12
18
BGU7042
SOT363
40 - 1000
GP 10 dB Bypass
3.3 3.3
38 3
10 -2
4 2.5
12 -
29 29
-0.2 -0.2
12 10
21 10
BGU7041
SOT363
40 - 1000
GP 10 dB
3.3
38
10
12
29
-0.2
12
21
Notes: (1) Gain = Programmable gain (GP) (2) Flatness of frequency response = FL
Block diagram of active splitter with passive loop-through
RF input
surge
BGU703x/BGU704x VGA
CONVENTIONAL TUNER OR SILICON TUNER
RF SW BF1108 or BF1118 brb403 WB LNA BGU7031/BGU7041 (optional)
RF output
51
2.3.2
Complete satellite portfolio for all LNB architectures
NXP Satellite LNB devices TFF101xHN, BFU710F/730F, and BGA28xx Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are the latest additions to NXP's leading portfolio for satellite LNB architectures. They are manufactured in NXPs groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology.
Fully integrated Ku-band downconverters TFF101xHN The TFF101xHN is a family of fully integrated downconverters for Ku-band LNBs. They give the best RF performance in terms of phase noise, gain, and noise figure at the lowest current consumption in the market. Ku-band downconverter TFF101xHN/N1 for LNB ` Typical application: Universal Single LNB & Twin LNB ` Ultra-low current consumption: 54 mA over PVT ` Only 7 external components ` No inductors ` Single supply domain: 5 V ` Uses low-cost fundamental 25 MHz crystal ` High PL1dBo = 3 dBm / 3OIPo = 13 dBm ` Best-in-class PN < 1.8 deg RMS - 10 kHz to 13 MHz integration bandwidth ` Multiple gain types available - TFF1014HN/N1 36 dB - TFF1015HN/N1 39 dB - TFF1017HN/N1 42 dB - TFF1018HN/N1 45 dB ` Flat gain over frequency (< 2 dBpp) ` Input & output matched 50 ` Small leadless DHVQFN16 package (2.5 x 3.5 x 0.85 mm) RF transistors BFU710F/730F The BFU710F and BFU730F are wideband RF transistors that can be used as an LNA or as a mixer for a DBS LNB in the Ku-band. In either application, they deliver good noise and linearity, a higher gain at a lower current consumption compared to their GaAs pHEMT equivalents, and the cost advantage of silicon. BFU710F as LNA in Ku-band LNB ` Typical application: LNA2 for single output LNB ` Overall similar RF performance to GaAs pHemt LNAs ` Power consumption: 3.5 mA ` Single supply: 3/5/6 V ` High RF gain: 13.5 dB ` Low noise figure: 1.6 dB ` Linearity (OIP3): 12 dBm BFU710F as mixer in Ku-band LNB ` Typical application: Active mixer for single output LNB ` Single supply 3/5/6 V ` Low power consumption: 2.5 mA ` LO drive < 0 dBm ` SSB noise figure < 8 dB (including BPF at the input) ` SSB conversion gain > 5 dB (including BPF at the input) ` Linearity (OIP3) > 0 dBm ` LO-RF isolation min 20 dB ` RF match better than 10 dB ` IF match better than 8 dB BFU730F as LNA in Ku-band LNB ` Typical application: LNA2 and LNA3 for multiple output LNB ` Overall similar RF performance to GaAs pHemt LNAs ` Power consumption: 11 mA ` Single supply 3/5/6 V ` Very high RF gain: 11.5 dB ` Low noise figure: 1.25 dB ` Linearity (OIP3) > 17 dBm ` Return loss > 10 dB MMICs BGA28xx as IF amplifiers (1st stage & output stage) For compatibility with existing designs, the series uses market standard packages: the SOT363 and the pin-compliant SOT363F. The pinning is identical to NXPs current gain block family, and the blocks deliver similar noise figures. New features include flatter gain, a positive gain slope, improved P1dB vs Icc, and no necessity for an output inductor. ` Internally matched at 50 ` Gain slope > 0.5 dB ` Single supply voltage: 3.3 or 5 V
52
` ` ` ` ` `
Reverse isolation: > 30 dB up to 2 GHz Best-in-class power vs current consumption Noise figure: 4 to 6 dB at 1 GHz Unconditionally stable (K > 1) High-compression-point models work without output inductor 6-pin SOT363 plastic SMD package
satellite LNB. They join the other discrete products, including oscillators, amplifiers, and switches, to provide complete coverage for all LNB architectures. Since the ICs, transistors, and the MMICs are manufactured in NXPs industry-leading QUBiC4X SiGe:C and QUBiC4+ process, they offer better overall RF performance and are more robust than their GaAs equivalents with the cost advantage of silicon. The process technology also enables higher integration, for added features. NXP owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured.
These products the integrated downconverters TFF101xHN, the wideband transistors BFU710F/730F for LNA and mixer functionality, and the BGA28xx series of IF MMICs are the most recent additions to NXPs leading portfolio for
Satellite outdoor unit, LNB for multiple users

horizontal 1st antenna stage LNA 2nd stage LNA 3rd stage LNA
mixer
H low IF amplifier
low mixer BIAS IC
oscillator V low mixer IF amplifier H high IF amplifier (4 x 2) IF SWITCH
IF amplifier
IF out 1
vertical antenna
high
oscillator V high
IF amplifier
IF out 2
1st stage LNA
2nd stage LNA
3rd stage LNA
mixer
IF amplifier
brb022
NOTE: Also look at chapter 1.4.4 satellite outdoor unit.
Fully integrated mixer / oscillator / downconverter
LB/HB/H/V detection pHemt bias LO oscillator control linear regulated 5 V BIAS V/T LIN HB 2nd 10.7 ~ 12.75 GHz 1st Ver BPF
mixer
Hor
0.95 ~ 1.9 GHz/ 1.1 ~ 2.15 GHz IF amps DC 13 (H) or 18 (V) 0 or 22 kHz
BFU710F
25.000 MHz
PLL/VCO
TFF101xHN
LOOP FILTER
001aan954
53
2.3.3
VSAT, 2-way communication via satellite
Design a Ku-/ Ka-band VSAT transceiver that meets IESS-308 with NXP's Ku-/ Ka-band RF LO generators The TFF100xHN family are Ku-band RF PLLs, with integrated VCO intended for low phase-noise localoscillator (LO) circuits in Ku- & Ka-band VSAT transmitters and transceivers. Manufactured in a high performance SiGe:C process, these devices deliver extremely low phase noise and comply with the IESS-308 from Intelsat.
VSAT networks are commonly used to transmit narrowband data, such as point-of-sale transactions for credit cards, or to transmit broadband data that supports satellite Internet access to a remote location, VoIP, or video. The network typically consists of a dish antenna, an outdoor unit, and an indoor unit. The outdoor unit is used for frequency translation between RF and IF, and usually includes a microwave-based uplink/downlink separator, a low noise block (LNB) for receiving the downlink signals, and a block Upconverter (BUC). The VSAT ICs can be used to create the LO generator for a linear BUC (meaning the IF or RF conversion is done by mixing with an LO). Features ` Phase noise compliant with IESS-308 (Intelsat) ` Differential input and output ` Divider settings at 16, 32, 64, 128 or 256 ` Lock-detect output ` SiGe:C technology (120 GHz fT process) ` HVQFN24 (SOT616-1) package Applications ` VSAT block upconverters ` VSAT down conversion ` Local oscillator signal generation To enable precise frequency and time multiplexing, the downlink signal provides an accurate frequency reference of 10 MHz. The indoor unit frequency multiplexes this with the uplink IF signal, and the LO signal in the BUC needs to be frequencylocked to the reference. The TFF100xHN ICs are housed in a 24-pin HVQFN (SOT616-1) package. The pins have been assigned for optimal performance. Three voltage domains are used to separate the block on the IC, and two pins for each output (OUT-P and OUT-N) have been reserved to match a typical layout using a linewidth of Z = 50 microstrip on a 20-mil RO4003 board (1.1 mm). The ground pins have been placed next to the reference input and the output, and, to minimize crossings in the application, all the supply pins are on the same side of the IC.
54
Satellite
VSATs
HUB
Typical VSAT network
synchronized QPSK data on L-band carrier in the range 0.95~1.45 GHz (extended range: 0.95~1.7 GHz) from indoor unit 10 MHz
mixer
band pass filter
solid state power amp
13.05 GHz settings (12.8 GHz settings) /64 (/48) 156.25 kHz (208.83 kHz) PFD
203.90625 (200) MHz LF PFD LF
12.8~13.05 on-chip VCO
amp
band pass filter /1305 (/960)
/64 TFF1003HN 203.90625 (200) MHz > 13.05 (12.8) GHz TFF1003 @ DIV = 64 PLL with on-chip VCO
cleanup PLL build around VCXO narrow bandwidth
brb200
Complete LO generator for linear BUC with TFF1003HN
Type
Package
fIN(REF)
VCC Typ
ICC
PLL phase noise @ N=64 @ 100 kHz Max
PLL fo(RF) (GHz) 12.8 - 13.05 14.62 - 15 14.1 - 14.4
Output buffer Po Typ (dBm) -5 -3 -3 RLout(RF) Max (dB) -10 -10 -10
Input Si Min (dBm) -10 -10 -10
(MHz) TFF1003HN TFF1007HN TFF1008HN SOT616 SOT616 SOT616 50 - 815 228.78 - 234.38 220.91 - 225.2
(V) 3.3 3.3 3.3
(mA) 100 130 130
(dBc/Hz) -92 -104 -104
55
2.3.4
Low noise LO generators for microwave & mmWave radios
NXP LO generators (integrated VCO/PLL) TFF11xxxHN Manufactured in NXPs breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators are low-power and low-spurious solutions that simplify design-in and lower the total cost of ownership.
These low noise local-oscillator (LO) generators, optimized for use in many different microwave applications between 7 and 15 GHz, deliver highly accurate performance in a small footprint. They require no alignment or frequency modification on the production line, so they simplify manufacturing. High integration saves board space and makes design-in easier, for lower overall cost and faster development. Since these ICs are manufactured in NXPs industry-leading QUBiC4X SiGe:C process, they offer better overall RF performance, are more robust than their GaAs equivalents, and consume much less power. The process technology also enables higher integration, for added features. NXP owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured. The TFF1003HN is the basis for the entire family of LO generators. It has VCO coverage of 12.8 to 13.05 GHz and accepts input signals from 50 to 816 MHz. The divider can be set for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a stability of 2 dB. The family of LO generators is completed by a range of 18 different devices operating in a center frequency ranging from 7 to 15 GHz. The RF performance of all these devices is consistent with the TFF1003HN. All the LO generators have low power dissipation (330 mW typ), and all are available in a space-saving 24-pin HVQFN package.
Features ` TFF11xxxHN family: lowest-noise LO generators for a full family in 7 to 15 GHz range ` Maximum power consumption for all types is 330 mW (typ) ` ` ` ` ` ` ` Phase-noise compliant with IESS-308 (Intelsat) Proven QUBiC4X SiGe:C technology (120 GHz fT process) External loop filter Differential input and output Lock-detect output Internally stabilized voltage reference for loop filter 24-pin HVQFN (SOT616-1) package
Applications : TFF11xxxHN family ` Industrial/medical test and measurement equipment ` Electronic warfare (EW) ` Electronic countermeasures (ECM) ` Point-to-point ` Point-to-multipoint ` Satellite communication/VSAT ` Radar systems
Full portfolio overview of low noise LO generators for general microwave applications at chapter 3.4.4
56
2.4 Portable devices

2.4.1 QUBiC4X SiGe:C LNAs for GPS, GloNass and Galileo with AEC-Q100 qualification
NXP's GPS low noise amplifiers offer the best reception of weak signals because of dynamic suppression of strong cellular and WLAN transmit signals. Moreover, as only two external components are required, designers can save up to 50% in PCB size and 10% in component cost.
Key features & benefits ` Low noise figure of 0.9 dB and choice of system-optimized gain of 16.5 or 18.5 dB, allowing for the best GPS reception ` Adaptive biasing dynamically suppresses strong cellular and WLAN transmit signals, further optimizing GPS reception ` Only 2 external components and 1.45 x 1.0 mm package size, enabling the smallest footprint and lowest external component cost ` AEC-Q100 qualification (BGU7004, BGU7008), meaning highest reliability under harsh conditions Key applications ` Smart phones ` Feature phones ` ` ` ` ` ` ` Tablets Personal navigation devices (PND) Digital still camera (DSC) Digital video camera (DVC) RF front end modules (used in phones) Complete GPS chipset modules (used in DSC) Automotive applications (BGU7004/8): toll collection, emergency call ` Theft protection (laptop, ATM) Adaptive biasing GPS signal power levels are weak and below the noise floor at -155 dBm. Moreover, in many consumer products such as smart phones, inter-modulation and harmonics caused by strong transmitters such as WLAN, can drive the GPS LNA into compression. With adaptive biasing, increasing output power from jammers is immediately detected, and current is temporarily increased. Adaptive biasing dynamically suppresses jammers, maintaining optimal GPS signal reception for as long as possible.
Power
GPS Signal
GPS band
Output power Input power Freq. 1575 MHz Jammer: GSM 1850
Gain vs. jammer power for NXP GPS LNA adaptive biasing vs Competitor.
(Pin 1575 MHz = -45 dBm, jammer at 1850 MHz). 22 21 20 19 18 17 16 15 14 13 12 -80 -70 -60 -50 -40 -30 -20 -10 0 P_Jammer at input DUT [dBm]
Gain [dB]
57

1
Smallest footprint
Type Package Package size X mm
BGU7005/7 Competitor Competitor Competitor Competitor Competitor SOT886 Wafer level package Wafer level package Thin small leadless package Thin small leadless package Thin small outline non-leaded 1.45 x 1 1.26 x 0.86 0.86 x 0.86 2 x 1.3 1.4 x 1.26 1.5 x 1.5
MMIC * Y mm
1.25 1.1 1.1 1.55 1.5 1.75
Pins #
6 6 4 6 6 6
Pitch Area mm
0.5 0.4 0.4 0.5 0.48 0.5
SMD's Appl. #
2 6 4 4 4 5
SMD size X mm
1.5 1.5 1.5 1.5 1.5 1.5
Y mm
0.8 0.8 0.8 0.8 0.8 0.8
SMD's area mm2

2.4 7.2 4.8 4.8 4.8 6
Appl. area mm2

4.53 8.85 6.01 8.29 7.28 9.06
mm
1.7 1.5 1.1 2.25 1.65 1.75
mm2
2.13 1.65 1.21 3.49 2.48 3.06
* Incl. keep out area on pcb (common used assembly rule)
Selection guide
Supply voltage Vcc Type Package (V) Supply current Icc (mA) Insertion power gain |s21|2 (dB) Noise figure NF (dB) Vcc = 1.8 V, Min
-14 -14 -15 -15
@ 1.575 GHz Input power at 1 dB gain compression PL(1dB) (dBm) Vcc = 1.8 V, Typ
-11 -11 -12 -12
Input third-order intercept point f1 = 1713 MHz, f2 = 1851 MHz IP3i (dBm)
Min
BGU7003 BGU7004^ BGU7005 BGU7007 BGU7008^ SOT891 SOT886 SOT886 SOT886 SOT886 2.2 1.5 1.5 1.5 1.5
Max
2.85 2.85 2.85 2.85 2.85
Min
3 -
Typ
4.5 4.5 4.8 4.8
Max
15 -
Min
16 -
Typ
18.3 16.5* 16.5* 18.5** 18.5**
Max
20 -
Typ
0.8 0.9 0.9 0.9 0.9
Vcc = 2.5 V, Icc = 5 mA

-20 -
Vcc = 2.85 V, Min

-11 -11 -14 -14
Vcc = 2.85 V, Typ

-8 -8 -11 -11
Vcc = 1.8 V, Min

5 5 1 1
Vcc = 1.8 V, Typ

9 9 4 4
Vcc = 2.5 V, Icc = 5 mA

0 -
Vcc = 2.85 V, Min

5 5 2 2
Vcc = 2.85 V, Typ

12 12 5 5
^ = AEC-Q101 qualified (some limitations apply) * = 16.5 dB without jammer / 17.5 dB with jammer ** = 18.5 dB without jammer / 19.5 dB with jammer
58
2.5 Industrial, scientific & medical

2.5.1 Medical applications driven by RF power: From imaging to cancer treatment, a flexible and versatile technology in the doctors toolbox RF technology is making its way into all kinds of medical applications, ranging from the well-known imaging techniques (MRI, EPRI) over low frequency, external heat treatment, and electro-surgical tools, to minimally invasive endoscopic cancer treatment (RF ablation). One clear trend is the increasing share of RF-based technologies for ablation. Another is the trend towards higher RF frequencies (several GHz) and higher powers (> 100 W) in order to
achieve higher spatial resolution, better control, and shorter treatment times.
RF radiation is not a new technology in medicine. It is currently used for imaging purposes in MRI (magnetic resonance imaging) and EPRI (electron paramagnetic resonance imaging), techniques that employ frequencies from a few megahertz to about 500 MHz. Other well-known external heat-treatments to rejuvenate skin or relieve muscle pain make use of frequencies around 480 kHz not too demanding in terms of RF. Surgical equipment to cut and simultaneously coagulate blood vessels runs off RF at about 5 MHz. The latter application belongs to a class of treatment techniques that is growing rapidly and uses RF radiation to deposit energy locally at various parts of the body in general to ablate (remove) unwanted tissue. Inside the body, the RF energy heats the surrounding tissue until it is desiccated and/or necrotized. The damaged tissue will later be re-absorbed by the surrounding, living tissue. Further application examples for RF ablation include cancer treatment in the lung, kidney, breast, bone and liver, removal of varicose veins, treatment of heart arrhythmia, and a growing list of other applications that benefit from the high control and feedback possible with RF. Another advantage of RF in this context is the fact that it can be applied via small catheters ending in antennas that deploy the RF signal. Unlike older, direct-current techniques, the tissue is heated only very locally around the antenna. Neighboring nerves (and the heart) are not stimulated. This led to the development of a variety of specialized catheters, used during minimally invasive surgery, along with ultrasound or X-ray imaging to determine the exact location of the RF-active part. During the treatment, the impedance of the surrounding tissue can be monitored and the end-point determined. With proper catheters, one can even achieve self limitation due to the reduced uptake of RF energy in desiccated tissue. Likewise, the RF frequency can be used to tune the energy deposition zone around the catheter: the higher the frequency, the smaller the penetration depth and hence the volume to deposit the RF energy in the watery tissue. With the trend towards higher RF frequencies and powers, the complexity of RF generators and the requirements for the device technology also increase. Above 10 MHz, say, up to 3.8 GHz, the technology of choice for power amplifiers is Si LDMOS (laterally
diffused metal oxide semiconductor). This technology has proven to be powerful, efficient, and rugged in base stations, radar systems, broadcast transmitters, and other industrial, scientific, and medical (ISM) applications. LDMOS is available from up to 50 V supply to achieve power levels up to 1,200 W per single device, with outstanding ruggedness and high gain and efficiency. To drive and control the LDMOS power amplifier stages, it takes voltage-controlled oscillators, phase locked loops, and medium power amplifiers. These parts of the RF signal chain are conveniently available based on reliable and high volume SiGe:C (QUBiC) semiconductor technologies. Going a step further, one can even use high-speed converters to drive the signal chain entirely from the digital domain, for full and easy control over the shape and modulation of the applied RF. RF implications These in-situ medical applications and, in general, most of the ISM applications, usually form highly mismatched RF loads during some part of the usage cycle. This in turn means that, without protection or other measures, all of the "injected" RF power reflects back into the final stage of the amplifier and needs to be dissipated in the transistor(s), and most likely destroys the device(s) if this situation lasts too long. LDMOS transistors are designed to be extremely rugged and generally withstand these mismatch situations without degrading over time. This device ruggedness, or the ability to withstand harsh RF conditions in general, be it mismatch or extremely short pulse rise and fall times, is essential for reliable device performance. RF power companies have gone to great lengths to achieve best-in-class device ruggedness. The technologies have been hardened under the most stringent ruggedness tests during development, which is particularly true for the 50 V technology. Among other factors, the base resistance of the parasitic bipolar and the drain extension of the LDMOS device play key roles in this respect. This ruggedness, combined with the power density and the high efficiencies achievable, make LDMOS the preferred technology for RF power amplifiers up to 3.8 GHz.
2.5.2
RF-driven plasma lighting: The next revolution in light sources are powered by solid-state RF technology
Recent developments in RF power technology, such as improved cost structure, ruggedness. and power levels of up to 1200 W per device, have enabled a breakthrough light source technology, called RF plasma lighting. All RF plasma lighting sources make use of a small, electrode-less quartz lightbulb that contains argon gas and metal halide mixtures. The bulb is powered by direct RF radiation, which ignites the gas mixtures to create and power a bright plasma, the color of which can be tuned by the composition of its constituents.
This technology works without any additional electrodes in the bulb, unlike standard high-intensity discharge lamps. No electrodes means very long operating lifetimes, since the contamination and wire erosion that lead to decreased efficiency and eventual lamp failure are precluded. The RF light source lives up to 50,000 hrs when it reaches 50% of its original light output. Typical high-intensity discharge lamps, by comparison, achieve 20,000 hrs operating life. Another strong point of the plasma light is its efficiency: 1 W of RF power is converted to 130-140 lm of light. This leads to very compact, very bright lamps that easily emit 10,000 to 20,000 lm of white light with a close-to-sunlight color rendition. The key enabler for the RF light source is RF technology, based on Si LDMOS RF power transistors. LDMOS technology operating at 28 V is the leading RF power technology for cellular base stations or broadcast transmitters as final amplifier stages in the frequency range between a few MHz up to 3.8 GHz. Recently, another LDMOS format, 50 V LDMOS, has emerged for use in broadcast, ISM, defense and avionics applications. It combines high power density to achieve power levels up to 1,200 W per single device and outstanding ruggedness, with high gain and efficiency at frequencies of up to 1.5 GHz. Comparison of lighting technologies The table below summarizes currently available technologies that generate bright light with varying degrees of efficiency. It lists a few key parameters, including lifetime, luminous flux, efficacy, color rendition index, color temperature, start-up time, and re-strike time (time to start after switch-off from normal operation). The plasma light source is among the brightest and most efficient available to date and boasts a very long life time. Important to note is the high brightness per bulb: much brighter than LEDs, for example. Consequently, it takes multiple LEDs to generate the light output of a single plasma light source. Hence, LED luminaries for street lighting will be considerably larger than those for plasma light sources. RF implications The RF plasma lighting sources can operate at a wide range of RF frequencies, but initial applications typically focus at frequencies of around a few hundred megahertz. At these frequencies both the 28 and 50 V LDMOS technologies can be used, yielding high efficiency values of 70% to more than 80% and low-heat dissipation making compact plasma lamp designs possible. The RF-driven plasma light is a perfect example of novel applications that can be powered by RF energy in the industrial, scientific, and medical (ISM) realm. Established technologies use RF to pump a gas discharge in a laser cavity. These "gas discharge" applications and in general, most of the ISM applications, typically form highly mismatched RF loads during some part of the usage cycle. In the case of gas discharges, for example, the gas cavity acts as an "open circuit" during switch-on. This in turn means that without protection or other measures, all of the "injected" RF power reflected back into the final stage of the amplifier needs to be dissipated in the transistor(s) right there and most likely destroys the device(s) if this situation lasts too long. After the discharge strikes, the load impedance reverts to "matched," eventually, and the transistor sees an acceptable load. Obviously, these mismatched conditions occur every time the plasma is "switched on, exerting strain on the finals. LDMOS transistors are designed to be extremely rugged and generally withstand these mismatch situations without degrading over time. This ruggedness, combined with the high power density and efficiency achievable, make LDMOS the preferred technology for RF lighting and other equally demanding applications in the ISM realm.
Color Start-up Re-strike Lifetime Luminous Efficacy Color flux temperature time time (lm/W) rendering (hrs) (klm) (K) (s) (s) Incandescent 2,000 1,700 10 to 17 100 3200 0.1 0.1 Fluorescent 10,500 3,000 115 51 to 76 2940 to 6430 0.3 0.1 LED 25,000 130 60 to 100 30 6000 0.1 0.1 Type HID (highintensity discharge) RF plasma 20,000 50,000 25,000 25,000 65 to 115 100 to140 40 to 94 70 to 94 4000 to 5400 4000 to 5500 60 30 480 25
Table 1: Comparison of light-generation. Note: numbers are only valid for a qualitative comparison. Source: www.wikipedia.org and references therein.
2.5.3
QUBiC4 Si and SiGe:C transistors for any RF function
NXP's 6th (Si) and 7th (SiGe:C) generation RF transistors offer the best RF noise figure versus gain performance at 12 GHz , drawing the lowest current. This performance allows for better signal reception at low power and enables RF receivers to operate more robustly in noisy environments. This family of 6th (Si) and 7th (SiGe:C) generation RF transistors can be used in most RF applications as low noise amplifiers (BFUx10F, BFUx30F, BFU725/N1), high linearity and high output amplifiers (BFUx60F, BFUx90F), buffer amplifiers, mixers, and oscillators.
Key features & benefits ` 40 / 110 GHz transition frequency allows for applications up to 18 GHz and beyond. ` From low noise figure of 1.45 dB and high gain of 13.5 dB at 12 GHz to high linearity of 34dBm (OIP3) at 1.8 GHz, gives a broad choice of parts for the perfect fit for each application. ` Consuming only 3 mA to generate 13.5 dB gain at 12 GHz ` Plastic surface-mount SOT343F package for high performance and easy manufacturing Key applications ` 2nd and 3rd LNA stage and mixer stage in DBS LNBs ` Ka- / Ku-band DROs ` Satellite radio (SDARS) LNA ` C-band / X-band high-output buffer amplifier ` AMR ` WLAN / WiFi ` ZigBee ` Bluetooth ` FM radio ` GPS ` LTE, cellular, UMTS ` Mobile TV ` RKE ` High linearity applications ` Low current, battery-equipped systems ` Low noise amplifiers for microwave communications systems ` Medium output power applications ` Microwave driver / buffer applications Demo boards and application notes ` Single-stage Ku-band LNA using BFU730F ` Single-stage 2.3-2.7 GHz LNA with BFU730F ` Single-stage 5-6 GHz WLAN LNA with BFU730F ` 1st stage SDARS LNA with BFU730F ` 2nd stage SDARS LNA with BFU690F
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Full portfolio overview of 6th and 7th generation RF wideband transistors at chapter 3.3.1
2.5.4
Building on decades of innovation in microwave and radar
NXP builds on more than 50 years of history in semiconductor technology and component design. For more than three decades we have led in providing high performance RF technologies for microwave applications. The company has built a strong position in the field of RF small signal and power transistors for microwave amplifiers with best-in-class Si devices and processing technologies.
We were the first semiconductor company to supply S-band transistors (2700 to 3500 MHz) based on laterally diffused metal-oxide-silicon (LDMOS). To further strengthen our position towards the future, we are currently developing new high power and high-bandwidth technologies based on gallium nitride (GaN) material. Another enabling technology is NXPs BICMOS process QUBiC, which is available in several variants with fT up to 200 GHz, each specialized to address specific small signal RF applications. The product portfolio encompasses: - Low noise amplifiers (LNAs) - Variable gain amplifiers (VGAs) - Mixers - Local oscillators (LOs) - LO generators NXP now also focuses on architectural breakthroughs and has developed highly integrated products for microwave and millimeter wave. One example is a family of LO generators from 7 GHz to 15 GHz with integrated PLL and VCO. Another example is an integrated RF power module in S-band (3.1-3.5 GHz) at 200 W. RF small signal product highlight: Manufactured in NXPs breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators TFF1xxxHN are low-power, low-spurious solutions that simplify design-in and lower the total cost of ownership. Features ` Lowest noise LO generators for 7 to 15 GHz range ` Maximum power consumption for all types, typical 330 mW ` Phase-noise compliant with IESS-308 (Intelsat) ` Proven QUBiC4X SiGe:C technology (120 GHz fT process) ` External loop filter ` Differential input and output ` Lock-detect output ` Internally stabilized voltage reference for loop filter RF power product highlight The BLS6G2933P-200 is the first LDMOS-based, industrystandard pallet produced by NXP. This pallet offers more than 40% efficiency and includes the complete bias network for S-band applications.
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Marine radar
9300 - 9500 MHz
For a complete list of products, see the respective small signal and power microwave pages
63
Features: ` Reduces component count and considerably simplifies radar system design ` P1 dB output power 200 W ` Efficiency > 40% ` Industry-standard footprint ` 50 in/out matched for entire bandwidth ` Lightweight heat sink included ` The advantages of LDMOS in comparison with Bipolar - Higher gain and better efficiency - Better ruggedness overdrive without risk to 5 dB - Improved pulse droop and insertion phase - Consistent performance no tuning required - Improved thermal characteristics no thermal runaway - Non-toxic packaging and RoHS-compliance
Microwave applications and bands of operation

System VHF and UHF L-band S-band X-band Commercial Avionics DME (Distance Measuring Equipment) Transponders Mode A / Mode S / Mode C / TCAS Military Avionics IFF transponders (Identification, Friend or Foe) TACAN (Tactical Air Navigation) JTIDS / MIDS (Joint Tactical Information Distribution System) 1030 - 1090 MHz 960 - 1215 MHz 960 - 1215 MHz 1030 - 1090 MHz 978 - 1215 MHz Frequency <1 GHz 1200 - 1400 MHz 2700 - 3500 MHz 8000 - 12000 MHz
2.5.5
Digital broadcasting at its best
The BLF881 / BLF888A transistor line-up enables todays most powerful and efficient digital broadcast transmitter applications.
BLF881 This transistor is based on NXPs 50 V LDMOS technology and features 120 W RF output power for broadcast transmitter and industrial applications. An unmatched device, the BLF881 can be used in the HF to 1 GHz range. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications either on its own or as a driver in combination with the high power transistor BLF888A. The BLF881 is also available in an earless version, the BLF881S, which enables an even more compact PCB design. BLF888A Running from a 50 V supply voltage, the BLF888A is a 600 W LDMOS RF power transistor for broadcast transmitter and industrial applications. Being a matched device, BLF888A is optimized for digital signal broadcasting and can deliver 120 W average DVB-T output power over the full UHF band from 470 MHz to 860 MHz with 20 dB power gain and 31% drain efficiency. The excellent ruggedness of this transistor (it withstands a VSWR in excess of 40:1) makes it the ultimate choice as final stage for digital transmitter applications ideally accompanied by a BLF881 as the driver. This device is also available as an earless package, denoted BLF888AS, to enable surface mount assembly processes and take optimum advantage of the very low thermal resistance package. Key features and benefits ` Excellent efficiency and reliability ` Highest power levels in the market ` Best-in-class ruggedness designed into all devices ` Best broadband performance ` Easy power control ` Best-in-class design support ` Low thermal resistance design for unrivalled reliability ` Advanced flange material for optimum thermal behavior and reliability ` Designed for broadband operation (470 to 860 MHz) Key applications ` Analogue and digital TV transmitters
typ. 0.5 kW DVB-T Driver stages
8 final typ. 5 kW DVB-T output power
TV exciter DVB-T
harmonic filter power monitor
amplifiers
brb339
Function Driver
Type BLF642 BLF881(S) BLF884P BLF888A(S) BLF879P
fmin (MHz) 1 1 470 470 470
fmax (MHz) 1400 1000 860 860 860
CW - P1dB (W) 35 140 350 600 450
VDS (V) 32 50 50 50 42
DVB-T PL (W) 7 30 70 120 90
DVB-T D (%) 33 31 32 31 31
DVB-T Gp (dB) 20 21 20 21 20
Package SOT467C SOT467C SOT539A SOT539 SOT539A
Final
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2.5.6
Broadband medium power amplifiers for all 400 to 2700 MHz applications
NXP medium power MMICs BGA7xxx for broadband applications Produced in NXPs proven QUBiC4 Si BiCMOS process, these MMICs bring improved thermal performance and added-value features to all 400 to 2700 MHz applications at a lower cost than GaAs versions.
Features ` ESD protection at all pins ` Single-supply operation (3.3 or 5 V) ` Integrated active biasing ` Fast shutdown ` Quiescent current adjustment ` Two package options, smallest leadless package (3 x 3 mm) and leaded SOT-89 Applications ` Wireless infrastructure (base station, repeater) ` eMetering ` Broadband CPE (MoCA) ` Satellite Master Antenna TV (SMATV) ` Industrial applications ` W-LAN / ISM / RFID Manufactured in NXPs breakthrough QUBiC4 process, these MMICs deliver RF performance comparable to that of their GaAs equivalents, but at a lower cost and with additional features, like thermal performance and ESD robustness. The QUBiC4 process makes it possible to support even more features, including active biasing, quiescent adjustment, VGA interfaces, and a power saving shutdown mode. To increase design flexibility, all the MMICs support single-supply (3.3/5 V) operation. And, to save space, they are available in the smallest package size (3 x 3 mm) and with leadless options.
Base station The high power level of these MMICs makes them an excellent choice for mobile infrastructure applications. They offer the highest gain over all base stations frequencies. The quiescent current feature allows for high efficiency and linearity in Class AB operation. The bias circuitry delivers stable performance over temperature and supply variations. The integrated shutdown function is a power-saving feature and can be used for fast shutdown. The MMICs can be tuned for any band between VHF and 2.7 GHz. Unbeatable thermal performance (30 C/W) improves overall quality and reliability. eMetering These MMICs are also very well suited to eMetering applications in the 900-2400 MHz ISM band. High integration and single supply operation mean that the MMICs can be combined with just a few other components to create a full-featured solution. The MMICs can be operated on battery power (with an energy saving shutdown mode) and are tunable between Class A and AB. They can also work on a power line network, so they support gas metering with or without a power connection. The builtin reliability and quality of a silicon-based process provides longevity, as does the improved ESD performance.
Supply f (MHz) BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* SOT908 SOT89 SOT908 SOT89 SOT908 leadless leaded leadless leaded leadless 400 - 2700 400 - 2700 400 - 2700 400 - 2700 400 - 2700 Vcc Typ (V) 5 5 5 5 5 Typ (mA) 130 110 180 170 Icc Max (mA) 200 325 -
Shutdown control VI(D)L(SHDN) Min (V) 0 0 0 Max (V) 0.7 0.7 0.7 VI(D)H(SHDN) Min (V) 2.5 2.5 2.5 Max (V) Vbias Vbias Vbias II(D)L(SHDN) Typ (A) 4 4 4 dB 22 22 20 19 18
RF performance Typ @ f = 940 MHz Gp PL(1dB) dBm 25 24 28 28 30 OIP3 dBm 38 38 44 41 45 NF dB 5 3 3 3 4
RF performance Typ @ f = 1960 MHz Gp dB 16 16 13 12 12 PL(1dB) dBm 24 25 28 28 30 OIP3 dBm 38 38 43 43 45 NF dB 5 4 5 4 4
Type
Package
The specifications of the BGA7130 and BGA7133 are target specifications until development is completed. * = check status at 3.1 new products, as this type has not been released for mass production. NXP Semiconductors RF Manual 15th edition 65
2.6 Technology
2.6.1 Boost efficiency and operational cost in wireless infrastructure with GaN
NXP GaN technology for RF power

This new gallium-nitride (GaN) technology, the result of a collaborative development effort, enables highpower amplifiers that deliver very high efficiency in next-generation wireless communication systems.
Features ` Power density up to five times higher than Si LDMOS ` 50 V operation ` High gain ` High efficiency ` High reliability ` Low parasitics Benefits ` High frequency combined with high power ` Broadband operation that lets a single power amplifier function at multiple frequencies ` Enabling technology for next-generation, high power, Switch Mode Power Amplifier (SMPA) architectures ` Lowers system costs and operational expenditures ` Ideal for tower-top base stations Applications ` Cellular base stations ` WiMAX ` Broadcast ` Radar Collaborating with United Monolithic Semiconductors and the Fraunhofer Institute for Applied Solid State Physics, NXP has developed a gallium-nitride (GaN) process technology that boosts performance of next-generation RF power amplifiers. The new GaN process, with its high frequency combined with high power, puts NXP in the ideal position to support future applications while continuing to evolve its well-established LDMOS technology. The GaN technology delivers numerous benefits to manufacturers of infrastructure equipment. Using the GaN technology in a transmitter represents a significant cost savings in system operation due to the high efficiencies achievable, along with major improvements in system performance and flexibility. Most of todays base station power amplifiers are limited to specific applications. The new GaN-based technology creates a universal transmitter that can be applied in multiple systems and frequencies. Such universal power amplifier architecture, enabled by NXPs GaN technology, simplifies transmitter production and logistics. The technology also allows operators to switch between frequency bands to instantly meet demands in the base stations coverage area. GaN transistors enable much more efficient power amplifiers and, as a result, drive down the operational costs of telecom operators. GaN transistors can operate at much higher junction temperatures than Si- and GaAs-based devices, so GaN is an ideal candidate for environments with reduced cooling capabilities, such as tower-top base stations. Also, with its high power densities, GaN has the potential to expand into other areas, including high power broadcast applications, where solid-state power amplifiers built with vacuum tubes are still the norm. NXPs first GaN broadband power amplifiers are expected to be available at the beginning of 2012, with Switch Mode Power Amplifiers (SMPAs) following in subsequent years.
Performance (targets)
Saturated output power at 50 V Frequency Maximum PAE Linear power gain 2C-WCDMA linear efficiency with DPD 100 W 2.2 GHz 68% 19 dB 40% at 52 dBc IM3 at 8 dB OPBO
Assembly of GaN power bar in standard ceramic package
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2.6.2
Looking for a leader in SiGe:C? You've just found us!
NXP QUBiC4 process technology NXP's innovative, high performance SiGe:C QUBiC4 process lets customers implement more functions into less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speed the migration from GaAs components to silicon by enabling cutting-edge products with best-in-class low noise performance, linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power. QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two high volume, NXP-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very low ppm in the field.
QUBiC4 in three variants, each having its own benefits for specific application areas: QUBiC4+ The QUBiC4+ BiCMOS process features 0.25 m CMOS with 5 metal layers for integration of dense digital logic-based smart functionality, a rich set of active and passive devices for high frequency mixed-signal designs including thick top metal layers for high quality inductors. The device set includes a 37 GHz fT NPNs with 3.8 V breakdown voltage (BVce0) and low noise figure (NF < 1.1 @ 2 GHz), 7 GHz fT VPNPs, a 28 GHz high voltage NPN with 5.9 V breakdown voltage, differential and single-ended varicaps with Q-factor > 30, scalable inductors with Q-factor > 20, 800 MHz FT lateral PNPs, 0.25 m CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and active resistors, a 270 ohm/sq. SiCr thin film resistor, a 5.7 fF/m2 oxide capacitor and a 5 fF/m2 MIM capacitor, 1 to 6 fF/m2 oxide capacitors and various other devices including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS transistors capacitor. The QUBiC4+ process is silicon-based and ideal for applications up to 5 GHz (fT = 37 GHz , NF < 1.1 dB @ 1.2 GHz), as well as for medium power amplifiers up to 33 dBm. QUBiC4X The QUBiC4X BiCMOS process is a SiGe:C-based extension of the QUBiC process for high frequency mixed-signal designs and offers a rich set of devices for QUBiC high frequency mixed-signal designs, including a 140 GHz fT NPN with 2.5 V breakdown voltage and very low noise figure (NF < 1.0 @ 10 GHz), 0.25 m CMOS, a variety of resistors, a 5.7 fF/m2 oxide capacitor, and a 5 fF/m2 MIM capacitor. The QUBiC4X is ideal for applications that typically operate at up to 30 GHz (fT = 137 GHz , NF < 0.8 dB @ 10 GHz) and ultralow noise applications such as LNAs and mixers.
QUBiC4Xi The QUBiC4Xi BiCMOS process further enhances the QUBiC4X process and offers an additional features set of devices for high frequency mixed-signal designs, including 180 GHz fT NPNs with 1.4 V breakdown voltage and ultra-low noise figure (NF < 0.7 @ 10 GHz), 0.25 m CMOS, several resistors, a 5.7 fF/m2 oxide capacitor and a 5 fF/m2 MIM capacitor. QUBiC4Xi represents the newest SiGe:C process, with improved on fT (> 200 GHz) and even lower noise figure (NF < 0.5 7 dB @ 10 GHz). It is ideal for applications beyond 30 GHz, such as LO generators.
QUBiC4Xi QUBiC4X
SiGe:C
f / fmax = 180/200 GHz
T
SiGe:C
fT / fmax = 137/180 GHz
+VPNP +TFR
QUBiC4+ ` Baseline, 0.25um CMOS, single poly, 5 metal ` Digital gate density 26k gates/mm2 ` fT/fMAX= 37/90 GHz ` +TFR Thin Film Resistor ` +DG Dual Gate Oxide MOS ` +HVNPN High Voltage NPN ` +VPNP Vertical PNP (high Vearly) ` -4ML high density 5fF/m2 MIM capacitor ` Wide range of active and high quality passive devices ` Optimized for up to 5 GHz applications QUBiC4X ` SiGe:C process ` fT/fMAX= 137/180 GHz ` Optimized for up to 30 GHz applications ` Transformers QUBiC4Xi ` SiGe:C process ` Improves fT/fmax up to 180/200 GHz ` Optimized for ultra-low noise for microwave above 30 GHz
QUBiC4+
BiCMOS
f /f max = 37/90 GHz
+DG +HVNPN -4ML
Features Release for production CMOS/Bipolar LV NPN f T/Fmax (GHz) HV NPN f T/Fmax (GHz) NPN BVce0: HV/LV ** V-PNP f T / BVcb0 (GHz / V) CMOS Voltage / Dual Gate Noise figure NPN (dB) RFCMOS f T (GHz) Isolation (60 dB @ 10 GHz) Interconnection (AlCu with CMP W Plugs) Capacitors Resistors (/sq) Varicaps (single-ended & differential) Inductors (1.5nH @ 2 GHz) - scalable Other devices Mask count
QUBiC4+ 2004 CMOS 0.25um, Bipolar 0.4um, Double poly, Deep trench, Si 37/90 (Si) 28/70 (Si) 5.9 / 3.8 V 7 / >9 2.5 / 3.3 V 2 GHz: 1.1 NMOS 58, PMOS 19 STI and DTI 5 LM, 3 m top Metal NW, DN, Poly-Poly 5fF/um2 MIM Poly (64/220/330/2K), Active (12, 57), High Precision SiCr (270) 2x single ended, Q > 40 3x differential, Q 30-50 Q > 21, Thick Metal, Deep trench isolation, High R substrate LPNP, Isolated NMOS 31 / 32 (MIM) / 33 (DG)
QUBiC4X 2006 CMOS 0.25um, Bipolar LV 0.4um, Double poly, Deep trench, SiGe:C 137/180 (SiGe:C) 60/120 (SiGe:C) 3.2 / 2.0 V planned 2.5 V 10 GHz: 0.8 NMOS 58, PMOS 19 STI and DTI 5 LM, 3 m top Metal 2 m M4 NW, DN, Poly-Poly 5fF/um2 MIM Poly (64/220/330/2K), Active (12, 57), High Precision SiCr (270) 2x single ended, Q > 40 3x differential, Q 30-50 Q > 21, Thick Metal, Deep trench isolation, High R substrate Isolated-NMOS tbd 35 (MIM)
QUBiC4X 2008 CMOS 0.25um, Bipolar LV 0.3um, Double poly, Deep trench, SiGe:C 180/200 (SiGe:C) tbd (SiGe:C) 2.5 / 1.4 V planned 2.5 V 10 GHz: 0.5 NMOS 58, PMOS 19 STI and DTI 5 LM, 3 m top Metal NW, DN, Poly-Poly 5fF/um2 MIM Poly (64/220/330/2K), Active (12, 57), High Precision SiCr (270) 2x single ended, Q > 40 3x differential, Q 30-50 Q > 21, Thick Metal, Deep trench isolation, High R substrate LPNP, Isolated-NMOS tbd 35 (MIM)
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2.6.3
Completing NXP's RF power transistor offering: products in plastic packages (OMP)
NXP is currently developing a complete line of overmolded plastic (OMP) RF power transistors and MMICs with peak powers ranging from 3 to 500 W. The main benefit of plastic packages is cost effectiveness with little or no impact on performance. The range of plastic devices will complement the extensive range of RF power products that NXP offers in ceramic packages for all frequency ranges and applications up to 2.45 GHz.
The products in development include ` Single-stage broadband drivers in HSOP-outlines, from 3 to 10 W ` Single-stage OMP drivers from 25 to 45 W, replacing their ceramic equivalents for cost sensitive applications ` Dual-stage MMICs from 30 to 60 W that can be used as high-gain drivers or combined as low power dual-stage Doherty amplifiers ` Fully integrated plug-and-play Doherty PAs in a single package (50 to 100 W)
Some of these products are available for sampling now, while the rest of the portfolio will be rolled out throughout 2011.
Function
Type
BLP05H6100P BLP05H6500P BLP05H650P BLP09H620 BLP10H6120 BLP10H6120P BLP10H6300P BLP10H6xx BLP15M6100P BLP15M630 BLP15M660P BLP15M7150P BLP15M7xx BLP25M710
fmin (MHz)
1 1 1 700 700 700 700 1 1200 1200 1200 1200 1 1 1 700 700 700 700 700 700 1800 1800 1800 1800 1800 2000 2000 2000 2000
fmax (MHz)
500 500 500 960 1000 1000 1000 1000 1500 1500 1500 1500 1500 2500 2500 1000 1000 1000 1000 1000 1000 2000 2000 2050 2050 2200 2200 2200 2200 2200
P1dB (W)
100 500 50 20 120 120 300 3, 5, 10 100 30 60 150 3, 5, 10 10 4 140 140 25 25 45 45 45 45 140 140 10 140 140 45 45
Package
SOT1138 SOT1138 SOT1138 SOT1138 SOT1138 SOT1138 SOT1138 SOT1179 SOT1138 SOT1138 SOT1138 SOT1138 SOT1179 SOT1179 SOT1179 SOT1138 SOT1204 SOT1138 SOT1204 SOT1138 SOT1204 SOT1138 SOT1204 SOT1138 SOT1204 SOT1179 SOT1138 SOT1204 SOT1138 SOT1204
Planned release
Q112 Q411 Q112 Q112 Q411 Q411 Q411 Q311 Q112 Q112 Q411 Q112 Q411 Q211 Q311 Q311 Q311 Q411 Q411 Q411 Q411 Q411 Q411 Q411 Q411 Q311 Q411 Q411 Q112 Q112
Description
Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP LDMOS driver transistor family for broadcast/ISM applications Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 OMP LDMOS transistor for broadcast/ISM applications Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications Gen7 OMP push-pull LDMOS transistor for broadcast/ISM applications Gen7 OMP LDMOS driver transistor family for broadcast/ISM applications Gen7 OMP LDMOS driver transistor for broadcast/ISM applications Gen7 OMP LDMOS driver transistor for broadcast/ISM applications Gen7 OMP LDMOS transistor for GSM & LTE applications Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing) Gen7 OMP LDMOS transistor for GSM & LTE applications Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing) Gen7 OMP LDMOS transistor for GSM & LTE applications Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing) Gen7 OMP LDMOS transistor for GSM & LTE applications Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing) Gen7 OMP LDMOS transistor for TD-SCDMA applications Gen7 OMP LDMOS transistor for WCDMA applications (gull-wing) Gen7 OMP LDMOS transistor for WCDMA & GSM applications Gen7 OMP LDMOS transistor for WCDMA applications Gen7 OMP LDMOS transistor for WCDMA applications (gull-wing) Gen7 OMP LDMOS transistor for WCDMA applications Gen7 OMP LDMOS transistor for WCDMA applications (gull-wing)
HPA
BLP25M74 BLP7G10S-140P BLP7G10S-140PG BLP7G10S-25P BLP7G10S-25PG BLP7G10S-45P BLP7G10S-45PG BLP7G20S-45P BLP7G20S-45PG BLP7G21S-140P BLP7G21S-140PG BLP7G22-10 BLP7G22S-140 BLP7G22S-140G BLP7G22S-45P BLP7G22S-45PG
69
` Final transistors in OMP package (SOT502-sized) ranging from 140 to 200 W in frequency bands from 730 MHz to 2.2 GHz ` Final transistors in OMP package (SOT502-sized) ranging from 3 to 500 W in ISM frequency bands from a few MHz up to 2.45 GHz
3. Products by function
NXP RF product catalog: http://www.nxp.com/rf
3.1
New products
DEV = In development CQS = Customer qualification samples RFS = Release for supply
Type Application / Description Expected status May 2011 Planned release Chapter
NEW: Wideband transistors BFU610F Gen6 wideband transistor BFU630F Gen6 wideband transistor BFU660F Gen6 wideband transistor BFU690F Gen6 wideband transistor BFU710F Gen7 wideband transistor BFU730F Gen7 wideband transistor BFU760F Gen7 wideband transistor BFU790F Gen7 wideband transistor NEW: AEC-Q101 qualified wideband MMICs and transistors BGA2002 Low noise wideband amplifier MMIC BFR94A RF wideband transistor BFR94AW RF wideband transistor NEW: SiGe:C LNAs (for e.g. GPS) BGU7005 SiGe:C MMIC, incl matching output for GPS LNA, 16.5 dB BGU7007 GPS LNA, 18.5 / 19.5 dB gain BGU7004 GPS LNA, 16.5 / 17.5 dB gain, AEC-Q100 BGU7008 GPS LNA, 18.5 / 19.5 dB gain, AEC-Q100 BGU7003W General-purpose unmatched LNA for FM radio NEW: LNAs for set-up boxes BGU7042 LNA for STB tuning BGU7041 LNA for STB tuning NEW: General purpose wideband amplifiers (50 gain blocks) BGA2802 IF gain block 25 dB BGA2803 IF gain block 23.4 dB BGA2870 IF gain block 31 dB NEW: Medium power amplifier MMICs BGA7124 Medium power amplifier, 24 dBm P1dB, leadless SOT908 BGA7024 Medium power amplifier, 24 dBm P1dB, leaded SOT89 BGA7127 Medium power amplifier, 27 dBm P1dB, leadless SOT908 BGA7027 Medium power amplifier, 27 dBm P1dB, leaded SOT89 BGA7130 Medium power amplifier, 30 dBm P1dB, leadless SOT908 NEW: VGAs for wireless infrastructures BGA7350 Dual IF VGA, control range 24 dB BGA7351 Dual IF VGA , control range 28 dB BGA7202 Tx RF VGA, 0.7 - 2.2 GHz BGA7204 Tx RF VGA, 0.7 - 2.8 GHz NEW: LNAs for wireless infrastructures BGU7051 LNA 900 MHz BGU7052 LNA 1.9 GHz BGU7053 LNA 2.5 GHz New: LO generators for wireless infrastructures BGX7300 Rx LO generator, 400 MHz to 3 GHz New: IQ modulators for wireless infrastructures BGX7100 IQ modulator, OIP3 30 dB, NF 165 dBm/Hz, P < 1 W, 350 MHz NEW: Dual mixers for wireless infrastructures BGX7220 Dual mixer , NF 8 dB, IIP3 30 dBm, P < 1 W, 700 MHz to 1.2 GHz BGX7221 Dual mixer , NF 8 dB, IIP3 30 dBm, P < 1 W, 1.7G Hz to 2.7 GHz 70 NXP Semiconductors RF Manual 15th edition
RFS RFS RFS RFS RFS RFS RFS RFS
Released Released Released Released Released Released Released Released
3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1
RFS RFS RFS
Released Released Released
3.4.1 3.3.1 3.3.1
RFS RFS RFS RFS CQS
Released Released Released Released Q2 2011
3.4.1 3.4.1 3.4.1 3.4.1 3.4.1
RFS RFS
Released Released
3.4.1 3.4.1
RFS RFS RFS
Released Released Released
3.4.1 3.4.1 3.4.1
RFS RFS RFS RFS DEV
Released Released Released Released Q4 2011
3.4.1 3.4.1 3.4.1 3.4.1 3.4.1
RFS CQS CQS CQS
Released Q3 2011 Q3 2011 Q3 2011
3.4.1 3.4.1 3.4.1 3.4.1
CQS CQS CQS
Q2 2011 Q2 2011 Q2 2011
3.4.1 3.4.1 3.4.1
DEV
Q4 2011
3.4.2
DEV
Q4 2011
3.4.2
DEV DEV
Q4 2011 Q4 2011
3.4.2 3.4.2
Type
Application / Description
Expected status May 2011
Planned release
Chapter
NEW: Low noise LO generators for VSAT applications TFF1007HN Low noise LO generator for VSAT applications TFF1008HN Low noise LO generator for VSAT applications NEW: RF satellite ICs TFF1014HN TFF1015HN TFF1017HN TFF1018HN
RFS RFS
Released Released
3.4.4 3.4.4
Satellite LNB downconverter IC Satellite LNB downconverter IC Satellite LNB downconverter IC Satellite LNB downconverter IC
RFS RFS RFS RFS
Released Released Released Released
3.4.3 3.4.3 3.4.3 3.4.3
NEW: RF CATV modules CGY1041 1 GHz, 21 dB gain push-pull, GaAs HFET SOT115 CGY1043 1 GHz, 23 dB gain push-pull, GaAs HFET SOT115 CGY1049 1 GHz, 29 dB gain push-pull, GaAs HFET SOT115 CGY1032 1 GHz, 32 dB gain push-pull, GaAs HFET SOT115 CGD1046Hi 1 GHz, 26 dB gain power doubler, GaAs HFET SOT115 BGO807CE 870 MHz, forward path optical receiver, SOT115 CGD982HCi 1 GHz, 22 dB gain GaAs high output power doubler CGD985HCi 1 GHz, 25 dB gain GaAs high output power doubler CGD987HCi 1 GHz, 27 dB gain GaAs high output power doubler NEW: RF high-speed data converters ADC1613D series Dual 16-bit ADC up to 65/80/105/125 Msps ADC1613S series Single 16-bit ADC up to 65/80/105/125 Msps ADC1610S series Single 16-bit ADC up to 65/80/105/125 Msps ADC1415S series Single 14-bit ADC up to 65/80/105/125 Msps ADC1413D series Dual 14-bit ADC up to 65/80/105/125 Msps ADC1413S series Single 14-bit ADC up to 65/80/105/125 Msps ADC1412D series Dual 14-bit ADC up to 65/80/105/125 Msps ADC1410S series Single 14-bit ADC up to 65/80/105/125 Msps ADC1215S series Single 12-bit ADC up to 65/80/105/125 Msps ADC1213D series Dual 12-bit ADC up to 65/80/105/125 Msps ADC1213S series Single 12-bit ADC up to 65/80/105/125 Msps ADC1212D series Dual 12-bit ADC up to 65/80/105/125 Msps ADC1210S series Single 12-bit ADC up to 65/80/105/125 Msps ADC1207S080 Single 12-bit ADC 80 Msps ADC1206S series Single 12-bit ADC up to 40/55/70 Msps ADC1115S125 Single 11-bit ADC up to 125 Msps ADC1113D125 Dual 11-bit ADC up to 125 Msps ADC1113S125 Single 11-bit ADC up to 125 Msps ADC1112D125 Dual 11-bit ADC up to 125 Msps ADC1015S series Single 10-bit ADC up to 65/80/105/125 Msps ADC1010S series Single 10-bit ADC up to 65/80/105/125 Msps ADC1006S series Single 10-bit ADC up to 55/70 Msps ADC1005S060 Single 10-bit ADC 60 Msps ADC1004S series Single 10-bit ADC 30/40/50 Msps ADC1003S series Single 10-bit ADC 30/40/50 Msps ADC1002S020 Single 10-bit ADC 20 Msps ADC0808S series Single 8-bit ADC up to 125/250 Msps ADC0804S series Single 8-bit ADC up to 30/40/50 Msps ADC0801S040 Single 8-bit ADC 40 Msps DAC1408D series Dual 14-bit DAC up to 650/750 Msps DAC1405D series Dual 14-bit DAC up to 650/750 Msps DAC1403D160 Dual 14-bit DAC 160 Msps DAC1401D125 Dual 14-bit DAC 125 Msps DAC1208D series Dual 12-bit DAC up to 650/750 Msps DAC1205D series Dual 12-bit DAC up to 650/750 Msps DAC1203D160 Dual 12-bit DAC 160 Msps DAC1201D125 Dual 12-bit DAC 125 Msps DAC1008D series Dual 10-bit DAC up to 650/750 Msps DAC1005D series Dual 10-bit DAC up to 650/750 Msps DAC1003D160 Dual 10-bit DAC 160 Msps DAC1001D125 Dual 10-bit DAC 125 Msps NEW: RF power transistors BLF6G22LS-40P Gen6 ceramic push-pull driver/final LDMOS transistor for WCDMA & LTE applications BLF6G27LS-40P Gen6 ceramic push-pull driver/final LDMOS transistor for LTE applications BLF7G10LS-250 Gen7 ceramic LDMOS transistor for GSM & LTE applications BLF7G21LS-160P Gen7 ceramic push-pull LDMOS transistor for TD-SCDMA applications BLF7G22LS-100P Gen7 ceramic push-pull LDMOS transistor for WCDMA applications BLF7G22LS-160 Gen7 ceramic LDMOS transistor for WCDMA applications BLF7G24LS-160P Gen7 ceramic push-pull LDMOS transistor for LTE applications BLF7G27LS-200P Gen7 ceramic push-pull LDMOS transistor for LTE applications BLF7G38LS-90P Gen7 ceramic push-pull LDMOS transistor for WiMAX applications BLF8G10LS-160 Gen8 ceramic LDMOS transistor for GSM & LTE applications BLF8G10LS-300P Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications BLM7G22S-60PG Gen7 LDMOS MMIC for WCDMA applications (gull-wing) BLP7G10S-140PG Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing) BLP7G22-10 Gen7 OMP LDMOS transistor for WCDMA & GSM applications
RFS RFS RFS RFS RFS RFS RFS RFS RFS
Released Released Released Released Released Released Released Released Released
3.6.2 3.6.2 3.6.2 3.6.2 3.6.3 3.6.4 3.6.3 3.6.3 3.6.3
RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS
Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released
3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2
DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV
Q311 Q311 Q311 Q311 Q411 Q311 Q311 Q311 Q112 Q311 Q112 Q411 Q311 Q311
3.7.1.4 3.7.1.5 3.7.1.1 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.5 3.7.1.5 3.7.1.6 3.7.1.1 3.7.1.1 3.7.1.4 3.7.1.1 3.7.1.4 71
Type
Application / Description
Expected status May 2011
Planned release
Chapter
NEW: RF power broadcast and ISM transistors BLF178P BLF572P BLF573P BLF642 BLF647P BLF278XR BLF578XR BLF879P BLF884P BLF888A BLP05H6100P BLP05H6500P BLP05H650P BLP09H620 BLP10H6120 BLP10H6300P BLP10H6xx BLF6G13LS-250P BLF6G15LS-500H BLP15M6100P BLP15M630 BLP15M660P BLP15M7150P BLP15M7xx BLP25M74 BLP25M710 BLF25M612 BLM2425M720 BLP2425M8140 BLF2425M6LS180P BLF2425M7LS200 BLF2425M7LS250P BLP2425M8250P ceramic push-pull LDMOS transistor for FM broadcast applications ceramic push-pull LDMOS transistor for VHF/UHF broadcast applications ceramic push-pull LDMOS transistor for VHF/UHF broadcast applications ceramic LDMOS driver transistor for broadcast/ISM applications ceramic push-pull LDMOS transistor for VHF/UHF broadcast applications extremely rugged ceramic push-pull transistor for broadcast/ISM applications extremely rugged ceramic push-pull LDMOS transistor for broadcast/ISM applications Gen6 ceramic push-pull LDMOS transistor for broadcast applications Gen6 ceramic push-pull LDMOS transistor for broadcast applications Gen6 ceramic push-pull LDMOS transistor for broadcast/ISM applcations Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP LDMOS driver transistor family for broadcast/ISM applications Gen6 ceramic LDMOS transistor for ISM applications Gen6 ceramic push-pull LDMOS transistor for digital broadcast applications Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 OMP LDMOS transistor for broadcast/ISM applications Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications Gen7 OMP push-pull LDMOS transistor for broadcast/ISM applications Gen7 OMP LDMOS driver transistor family for broadcast/ISM applications Gen7 OMP LDMOS driver transistor for broadcast/ISM applications Gen7 OMP LDMOS driver transistor for broadcast/ISM applications Gen6 ceramic LDMOS driver transistor for 2.45 GHz ISM applications Gen7 LDMOS MMIC for 2.45 GHz ISM applications Gen8 OMP LDMOS transistor for 2.45 GHz ISM applications Gen6 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications Gen7 ceramic LDMOS transistor for 2.45 GHz ISM applications Gen7 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications Gen8 OMP push-pull LDMOS transistor for 2.45 GHz ISM applications DEV DEV DEV DEV DEV DEV DEV DEV DEV CQS DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV Q211 Q112 Q411 Q211 Q411 Q311 Q311 Q111 Q311 now Q112 Q411 Q112 Q112 Q411 Q411 Q311 Q311 Q211 Q112 Q112 Q411 Q112 Q411 Q311 Q311 Q311 Q411 Q112 Q311 Q311 Q311 Q312 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.2 3.7.2.2 3.7.2.2 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3
NEW: RF microwave transistors BLA6H0912-1000 1000 W ceramic Avionics LDMOS transistor BLA6G1011LS-200RG Gull-wing ceramic Avionics LDMOS transistor BLL6G1214L-250 Gen6 ceramic LDMOS transistor for L-band applications BLS6G2731P-200 S-band pallet using 2x Gen6 ceramic LDMOS transistors BLS6G2735LS-30 Gen6 ceramic LDMOS driver transistor for S-band radar applications BLS7G2729LS-350P Gen6 ceramic push-pull LDMOS transistor for S-band radar applications BLS7G2933S-150 Gen7 ceramic LDMOS transistor for S-bad radar applcations BLS6G2933P-200 S-band pallet using 2x Gen6 ceramic LDMOS transistors BLS7G3135LS-350P Gen6 ceramic push-pull LDMOS transistor for S-band radar applications
Q311 Q211 Q311 Q311 Q211 Q211 released Q211 Q211
DEV DEV DEV DEV DEV DEV RFS DEV DEV
3.7.3.1 3.7.3.1 3.7.3.2 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3
72
3.2
3.2.1
RF diodes
Varicap diodes
Varicap selection guide on www.nxp.com/varicaps Easy-to-use parametric filters help you to choose the right varicap for your design.
Why choose NXPs varicap diodes: ` Reference designs for TV and radio tuning ` Direct matching process ` Small tolerances ` Short lead time ` Complete portfolio covering broad frequency range and variety in package (including leadless) ` Reliable volume supply VCO and FM radio tuning varicap diodes
@ f = 1 MHz Type Package Number of diodes 1 1 1 1 2 1 1 2 1 1 Configuration SG SG SG SG CC SG SG CC SG SG Cd min (pF) BB145B BB156 BB198 BB199 BB201 BB202^^ BB202LX^^ BB207^ BB208-02^ BB208-03^ SOD523 SOD323 SOD523 SOD523 SOT23 SOD523 SOD882D SOT23 SOD523 SOD323 6.4 14.4 25 36.5 89 28.2 28.2 76 19.9 19.9 Cd typ (pF) 16 95 81 Cd max (pF) 7.2 17.6 28.5 42.5 102 33.5 33.5 86 23.2 23.2 @ VR = (V) 1 1 1 0.5 1 0.2 0.2 1 1 1 Cd min (pF) 2.55 4.2 4.8 11.8 25.5 7.2 7.2 25.5 4.5 4.5 Cd typ (pF) 4.8 27.6 27.6 Cd max (pF) 2.95 5.4 6.8 13.8 29.7 11.2 11.2 29.7 5.4 5.4 @ VR = (V) 4 7.5 4 2 7.5 2.3 2.3 7.5 7.5 7.5 Cd1/ Cd2 min 2.2 2.7 2.8 3.1 2.5 2.5 2.6 3.7 3.7 CC: SG: Cd1/ Cd2 max 3.9 3.8 3.3 5.2 5.2 @ V1 = (V) 1 1 0.5 1 0.2 0.2 1 1 1 @ V2 = (V) 4 7.5 2 7.5 2.3 2.3 7.5 7.5 7.5 rs typ () 0.4 0.25 0.25 0.35 0.35 0.2 0.35 0.35 rs max () 0.6 0.7 0.8 0.5 0.6 0.4 0.5 0.5 @f= (MHz) 470 470 100 100 100 100 100 100 100 100
^ = Including special design for FM car radio (CREST-IC:TEF6860). ^^ = Including special design for mobile phone tuner ICs.
Type of connection:
Common Cathode Single
TV / VCR / DVD / HDD varicap diodes - UHF tuning

@ f = 1 MHz Type Package Cd min (pF) Matched BB149 BB149A BB179 BB179B BB179BLX BB179LX BB184 BB189 Unmatched BB135 SOD323 SOD323 SOD523 SOD523 SOD882D SOD882D SOD523 SOD523 SOD323 1.9 1.951 1.951 1.9 1.9 1.95 1.87 1.89 1.7 Cd typ (pF) 2.1 2.1 2.1 2.1 2.1 2 2.04 Cd max (pF) 2.25 2.225 2.225 2.25 2.25 2.22 2.13 2.18 2.1 @ VR = (V) 28 28 28 28 28 28 10 25 28 Cd1/Cd2 min Cd1/Cd2 typ Cd1/Cd2 max @ V1 = (V) 1 1 1 1 1 1 1 2 0.5 @ V2 = (V) 28 28 28 28 28 28 10 25 28 rs typ () 0.6 0.6 0.6 0.65 0.65 0.65 0.65 rs max () 0.75 0.75 0.75 0.75 0.7 0.75 @f= (MHz) 470 470 470 470 470 470 470 470 470 @ Cd = (pF) 9 9 9 9 9 30 9 9 9 2 2 2 2 2 2 2 1.8 Cd/ Cd @ V1 = (V) 0.5 1 1 1 1 1 1 2 @ V2 = (V) 28 28 28 28 28 28 10 25 10 10 10 10 10 5 5 10 @ Ns =
8.2 8.45 8.45 8.45 8.45 6 6.3 8.9
9 9 9 9 9 9 7 7.3 -
10 10.9 10.9 10 10.9 12
Bold = Highly recommended product
73
TV / VCR / DVD / HDD varicap diodes - VHF tuning

@ f = 1 MHz Type Package Cd min (pF) Matched BB148 BB152 BB153 BB178 BB178LX BB182 BB182LX BB187 BB187LX Unmatched BB131 BB181 BB181LX BBY40 SOD323 SOD323 SOD323 SOD523 SOD882D SOD523 SOD882D SOD523 SOD882D SOD323 SOD523 SOD882D SOT23 2.4 2.48 2.361 2.361 2.36 2.48 2.48 2.57 2.57 0.7 0.7 0.7 4.3 Cd typ (pF) 2.6 2.7 2.6 2.6 2.6 2.7 2.7 2.75 2.75 Cd max (pF) 2.75 2.89 2.754 2.754 2.75 2.89 2.89 2.92 2.92 1.055 1.055 1.055 6 @ VR = (V) 28 28 28 28 28 28 28 25 25 28 28 28 25 Cd1/ Cd2 min 14.5 20.6 13.5 13.5 13.5 20.6 11 11 12 12 5 Cd1/ Cd2 typ 15 22 15 15 15 22 22 14 Cd1/ Cd2 max 16 16 6.5 @ V1 = (V) 1 1 1 1 1 1 1 2 2 0.5 0.5 0.5 3 @ V2 = (V) 28 28 28 28 28 28 28 25 25 28 28 28 25 rs typ () 1 0.65 0.65 0.7 1 1 2 rs max () 0.9 1.2 0.8 0.8 1.2 0.75 0.75 3 3 0.7 @f= (MHz) 100 100 100 100 470 100 100 470 470 470 470 470 200 @ Cd = (pF) 12 30 30 30 30 30 30 9 9 9 25 2 2 2 2 2 2 2 2 2 Cd/ Cd @ V1 = (V) 0.5 1 1 1 1 1 1 2 2 @ V2 = (V) 28 28 28 28 28 28 28 25 25 10 10 10 10 5 10 10 10 10 @ Ns =
3.2.2
PIN diodes
Cd (fF) 700 600 500 400 300 200 BAP50LX BAP63LX BAP63LX BAP1321LX BAP51LX BAP51LX BAP1321LX BAP142LX BAP142LX BAP64LX BAP70-02 BAP50LX BAP65LX BAP65LX
brb407
Freq = 100 MHz, Cd @ VR = 0 V rD @ 0.5 mA rD @ 10 mA
Pin diode selection guide on www.nxp.com/pindiodes Easy-to-use parametric filters help you to choose the right pin diode for your design. Why choose NXPs PIN diodes: ` Broad portfolio ` Unrivalled performance ` Short lead time ` Low series inductance ` Low insertion loss ` Low capacitance
100 0 101
BAP64LX BAP70-02
10
rD ()
102
25 Isolation (dB) 20 BAP50LX 15 BAP64LX BAP51LX BAP142LX BAP1321LX BAP63LX
brb408
Freq = 1800 MHz, Isolation @ VR = 0 V Insertion Loss @ 0.5 mA Insertion Loss @ 10 mA BAP70-20 BAP51LX BAP142LX BAP1321LX BAP50LX BAP64LX BAP70-02
10
BAP63LX
BAP65LX
BAP65LX
0 102
101
Insertion Loss (dB)
10
Look for more graphs showing the Pin diode line-up at other frequencies on our web site: www.nxp.com/pindiodes
PIN diodes : typical rD @ 1 mA 2, switching diodes

@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ () 2.3 2.5 2.5 2.5 rD max () 3.3 3.5 3.5 3.5 @ IF = 1 mA rD typ () 0.94 1 1 1 1 1.87 1.95 1.95 1.95 rD max () 3 3 3 3 @ IF = 10 mA rD typ () 0.49 0.56 0.56 0.56 0.56 1.19 1.17 1.17 1.17 rD max () 0.9 0.9 0.9 0.9 0.9 1.8 1.8 1.8 1.8 @ VR =0V Cd typ (pF) 0.61 0.65 0.65 0.7 0.7 0.34 0.36 0.4 0.4 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.48 0.55 0.55 0.575 0.575 0.29 0.32 0.35 0.35 Cd max (pF) 0.85 0.9 0.9 0.9 0.9 @ VR = 20 V Cd typ (pF) 0.37 0.375 0.375 0.425 0.425 0.24 0.25 0.27 0.3 Cd max (pF) 0.3 0.32 0.32 0.35
BAP65LX BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP63LX BAP63-02 BAP63-03 BAP63-05W
SOD882D SOD523 SOD323 SOT23 SOT323 SOD882D SOD523 SOD323 SOT323
1 1 1 2 2 1 1 1 2
SG SG SG CC CC SG SG SG CC
30 30 30 30 30 50 50 50 50
100 100 100 100 100 100 100 100 100
Bold = Highly recommended product 74 NXP Semiconductors RF Manual 15th edition
PIN diodes : typical rD @ 1 mA = 2.2 - 2.4, switching diodes

@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ () 3.3 3.4 3.4 3.4 3.3 3.3 rD max () 4.5 5 5 5 5 5 @ IF = 1 mA rD typ () 2.2 2.4 2.4 2.4 2.4 2.4 rD max () 3.3 3.6 3.6 3.6 3.6 3.6 @ IF = 10 mA rD typ () 0.8 1.2 1.2 1.2 1.2 1 rD max () 1.2 1.8 1.8 1.8 1.8 1.8 @ f = 1 MHz @ VR @ VR = 20 V @ VR = 1 V =0V Cd Cd Cd Cd Cd typ typ max typ max (pF) (pF) (pF) (pF) (pF) 0.28 0.23 0.18 0.28 0.4 0.35 0.45 0.25 0.32 0.4 0.35 0.45 0.25 0.32 0.42 0.375 0.45 0.275 0.325 0.32 0.27 0.38 0.21 0.28 0.25 0.22 0.16 0.26
BAP55LX BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX
SOD882D SOD523 SOD323 SOT23 SOD882D SOD882D
1 1 1 2 1 1
SG SG SG SR SG SG
50 60 60 60 60 50
100 100 100 100 100 100
PIN diodes : typical rD @ 1 mA = 3.2 - 3.6, switching diodes

@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ () 4.9 5.5 5.5 5.5 5.5 5.5 rD max () 9 9 9 9 9 @ IF = 1 mA rD typ () 3.2 3.6 3.6 3.6 3.6 3.6 rD max () 6.5 6.5 6.5 6.5 6.5 @ IF = 10 mA rD typ () 1.4 1.5 1.5 1.5 1.5 2 rD max () 2.5 2.5 2.5 2.5 2.5 @ VR =0V Cd typ (pF) 0.3 0.4 0.4 0.4 0.4 0.4 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.22 0.3 0.3 0.3 0.3 0.3 Cd max (pF) 0.4 0.55 0.55 0.55 0.55 @ VR = 20 V Cd typ (pF) 0.17 0.2 0.2 0.2 0.2 0.2 Cd max (pF) 0.3 0.35 0.35 0.35 0.35 -
BAP51LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W
SOD882D SOD523 SOD323 SOT323 SOT323 SOT323
1 1 1 2 2 2
SG SG SG SR CC CA
60 60 50 50 50 50
100 50 50 50 50 50
@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ () 20 20 20 20 20 20 20 20 20 rD max () 40 40 40 40 40 40 40 40 40 @ IF = 1 mA rD typ () 10 10 10 10 10 10 10 10 10 rD max () 20 20 20 20 20 20 20 20 20 @ IF = 10 mA rD typ () 2 2 2 2 2 2 2 2 2 @ VR = 0V Cd rD max typ () (pF) 3,8 0.52 3.8 0.48 3.8 0.48 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52
@ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.37 0.35 0.35 0.37 0.37 0.37 0.37 0.37 0.37 Cd max (pF) @ VR = 20 V Cd typ (pF) 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 Cd max (pF) 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35
BAP64Q BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W
SOT753 SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323
4 1 1 2 2 2 2 2 2
SR SG SG SR SR CC CC CA CA
100 175 175 175 100 175 100 175 100
100 100 100 100 100 100 100 100 100
PIN diodes : typical rD @ 1 mA = 14 - 16, attenuator diodes

@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ () 25 25 25 25 25 25 26 31 rD max () 40 40 40 40 40 40 40 50 @ IF = 1 mA rD typ () 14 14 14 14 14 14 14 16 rD max () 25 25 25 25 25 25 25 26 @ VR = @ IF = 10 mA 0V Cd rD rD max typ typ () () (pF) 3 5 0.4 3 5 0.4 3 5 0.45 3 5 0.45 3 5 0.45 3 5 0.45 3 5 0.4 2.6 4.4 0.48 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.3 0.3 0.35 0.35 0.3 0.35 0.28 0.34 Cd max (pF) 0.55 0.55 0.6 0.6 0.5 0.6 0.55 @ VR = 5 V Cd typ (pF) 0.22 0.2 0.3 0.3 0.35 0.3 0.19 0.17* Cd max (pF) 0.35 0.35 0.5 0.5 0.6 0.5 0.35 0.3*
BAP50-02 SOD523 BAP50-03 SOD323 BAP50-04 SOT23 BAP50-04W SOT323 BAP50-05 SOT23 BAP50-05W SOT323 BAP50LX SOD882D BAP64LX^ SOD882D ^ = attenuator / switching diode
1 1 2 2 2 2 1 1
SG SG SR SR CC CC SG SG *= @ VR = 20 V
50 50 50 50 50 50 50 60
50 50 50 50 50 50 50 100
PIN diodes : typical rD @ 1 mA = 40, attenuator diodes

@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ () 77 77 77 77 77 77 rD max () 100 100 100 100 100 100 @ IF = 1 mA rD typ () 40 40 40 40 40 40 rD max () 50 50 50 50 50 50 @ IF = 10 mA rD typ () 5.4 5.4 5.4 5.4 5.4 5.4 rD max () 7 7 7 7 7 7 @ VR =0V Cd typ (pF) 0.6 0.57 0.57 0.6 0.6 0.57 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.43 0.4 0.4 0.43 0.43 0.4 Cd max (pF) @ VR = 20 V Cd max (pF) 0.25 0.2 0.2 0.25 0.25 0.2 Cd typ (pF) 0.3 0.25 0.25 0.3 0.3 0.25
BAP70Q BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP70AM
SOT753 SOD523 SOD323 SOT323 SOT23 SOT363
4 1 1 2 2 4
SR SG SG SR CC SR
50 50 50 50 50 50
100 100 100 100 100 100 SG = Single SR = Series
Bold = highly recommended product
CC = Common Cathode CA = Common Anode NXP Semiconductors RF Manual 15th edition 75
PIN diodes : typical rD @ 1 mA = 10, attenuator/switching diodes
3.2.3
Band switch diodes
Why choose NXPs band switch diodes ` Reliable volume supplier ` Short lead time ` Low series inductance ` Low insertion loss ` Low capacitance ` High reverse isolation
Type BA277 BA591 BA891 BAT18
Package SOD523 SOD323 SOD523 SOT23
VR max (V) 35 35 35 35
IF max (mA) 100 100 100 100
rD max () 0.7 0.7 0.7 0.7
@ IF = (mA) 2 3 3 5
@f= (MHz) 100 100 100 200
Cd max (pF) 1.2 0.9 0.9 1
@ VR = (V) 6 3 3 20
@f= (MHz) 1 1 1 1
3.2.4
Schottky diodes
Schottky diode selection guide on www.nxp.com/rfschottkydiodes Easy-to-use parametric filters help you to choose the right schottky diode for your design.
Why choose NXPs schottky diodes ` Low diode capacitance ` Low forward voltage ` Single- and triple-isolated diode ` Small package Applications ` Digital applications: - Ultra high-speed switching - Clamping circuits ` RF applications: - Diode ring mixer - RF detector - RF voltage doubler Low capacitance schottky diodes
Type BAT17 PMBD353 PMBD354^ 1PS76SB17 1PS66SB17 1PS79SB17 1PS88SB82 1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 1PS66SB82 1PS10SB82 Package SOT23 SOT23 SOT23 SOD323 SOT666 SOD523 SOT363 SOT323 SOT323 SOT323 SOT323 SOT666 SOD882 Configuration single dual series dual series single triple isolated single triple isolated single dual series dual c.c dual c.a. triple isolated single VR max. (V) 4 4 4 4 4 4 15 15 15 15 15 15 15 IF max. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 VF max. (mV) 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA CD max. (pF) 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V
Bold = highly recommended product
^ Diodes have matched capacitance
76
3.3
3.3.1
RF Bipolar transistors
Wideband transistors
RF wideband transistor selection guide on www.nxp.com/rftransistors Easy-to-use parametric filters help you to choose the right RF wideband transistor for your design.
Why choose NXPs wideband transistors st th ` Broad portfolio (1 - 7 generation) ` Short lead time ` Smallest packages ` Volume delivery
Wideband transistors The fT-IC curve represents Transition Frequency (fT) characteristics as a function of collector current (IC) for the six generations of RF wideband transistors. A group of transistors having the same collector current (IC) and similar transition frequencies (fT) represents a curve. The curve number matches products in the table, detailing their RF characteristics.
77
Wideband transistors line-up per frequency

100
(33) (39) bra510
(37)
fT (GHz)
(35) (25) (26) (27) (41) (36)
7th generation
(29) (32) (38) (21) (15) (16) (11) (12) (40) (22) (23) 6th generation 5th generation 4th generation
10
(34)
(30) (19)
(20)
(31)
(14) (18) (7) (8) (4) (1) (3) (9) (10)
3rd generation
2nd generation
1st generation
1 0.1
0.2
0.5
10
20
50
100
200
500 IC (mA)
1000
Pin 1 2 3 4 1 2 3 4 Figure 2 1 2 3 4
2 Figure 1
Description Type (see Fig.1) collector base emitter emitter Type/X (see Fig.1) collector emitter base emitter Type/XR (see Fig.2) collector emitter base emitter NXP Semiconductors RF Manual 15th edition
Wideband transistors (RF small signal) RF power transistors for portable equipment (VHF)
@ f = (MHz) VCEO (max) (V) GUM (typ) (dB) @ IC = (mA) @ VCE = (V) 3.6 3.6 3.6 @ f = (MHz) @ IC = (mA) 5 5 5 -5 -10 5 5 5 5 45 15 5 5 5 5 5 2000 1000 2000 1000 1000 2000 2000 2000 2000 1000 2000 2000 2000 2000 2000 2000 10 10 10 -10 -5 8 8 8 8 10 8 8 8 8 8 8 @ VCE = (V) -
P tot (max) (mW)
Package
BFG10 BFG10/X BFG10W/X BLT50 BLT70 BLT80 BLT81
SOT143 SOT143 SOT343 SOT223 SOT223H SOT223 SOT223
8 8 10 10 8 10 9.5
IC (max) (mA)
250 250 250 500 250 250 500
400 400 400 2000 2100 2000 2000
NPN NPN NPN NPN NPN NPN NPN
Polarity
Type
7 7 7 -
1900 1900 1900 -
1 1 1 -
RF wideband transistors generation 1 - 3

P tot (max) (mW) GUM (typ) (dB) GUM (typ) (dB) @ f = (MHz) @ f = (MHz) @ IC = (mA) @ f = (MHz) @ VCE = (V) @ IC = (mA) @ VCE = (V) @ IC = (mA) VCEO (max) (V) @ VCE = (V) 5 5 1 1 1 1 10 -10 10 6 10 10 5 1 1 -10 -10 -5 -5 8 8 8 8 10 8 8 8 8 8 8
f T (typ) (GHz)
IC (max) (mA)
NF (typ) (dB)
Generation
Package
BFS17 BFS17W BFT25 BFG25A/X BFG25AW BFG25AW/X BFG31 BFG35 BFG92A/X BFG97 BFQ149 BFQ18A BFQ19 BFR106 BFR92A BFR92AW BFS17A BFS25A BFT25A BFT92 BFT92W BFT93 BFT93W BFG135 BFG198 BFG590 BFG590/X BFG591 BFG67 BFG67/X BFG93A BFG93A/X BFG94 BFQ591 BFQ67W BFR93A BFR94A^ BFR93AR BFR93AW BFR94AW^
1st 1st 1st 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd
3 3 1 18 18 18 10 11 7 10 10 11 10 10 7 7 4 18 18 7 7 9 9 16 15 22 22 22 14 14 8 8 8 22 14 8 8 8 8 8
SOT23 SOT323 SOT23
1 1.6 2.3
15 15 5 5 5 5 -15 18 15 15 -15 18 15 15 15 15 15 5 5 -15 -15 -12 -12 15 10 15 15 15 10 10 12 12 12 15 10 12 12 12 12 12
25 300 NPN 50 300 NPN 6.5 30 NPN 6.5 6.5 6.5 -100 150 25 100 -100 150 100 100 25 25 25 6.5 6.5 -25 -35 -35 -50 150 100 200 200 200 50 50 35 35 60 200 50 35 35 35 35 35 32 500 500 1000 1000 400 1000 1000 1000 1000 500 300 300 300 32 32 300 300 300 300 1000 1000 400 400 2000 380 380 300 300 700 2250 300 300 300 300 300 300
Polarity
Curve
Type
18
500
12
800 1000 2000 2000 800 800 2000 800 800 800 2000 2000 800 1000 1000 1000 1000 800 800 2000 2000 2000 2000 2000 2000 2000 1000 2000 2000 2000 2000 2000 2000 2000
4.5 4.5 3.8
500 500 500 1000 1000 1000 1000 500 500 800 2000 1000 800 1000 1000 500 500 500 500 1000 1000 1000 1000 500 1000 1000 1000 1000 1000 1000
2 2 1 0.5 1 1 5 -50 50 30 5 5 2 1 0.5 -5 -5 -10 -10 15 15 5 5 45 5 5 5 5 5 5
SOT143B 5 SOT343N 5 SOT343N 5 SOT223 5 SOT223 4 SOT143B 5 SOT223 5.5 SOT89 5 SOT89 4 SOT89 5.5 SOT23 5 SOT23 5 SOT323 5 SOT23 2.8 SOT323 5 SOT23 5 SOT23 5 SOT323 4 SOT23 5 SOT323 4 SOT223 SOT223 SOT143B SOT143B SOT223 SOT143B SOT143B SOT143B SOT143B SOT223 SOT89 SOT323 SOT23 SOT23 SOT23 SOT323 SOT323 7 8 5 5 7 8 8 6 6 6 7 8 6 6 6 5 5
NPN NPN NPN 16 1000 0.5 PNP 16 500 -70 NPN 15 500 100 NPN 16 1000 15 NPN 16 500 70 PNP 12 500 -50 NPN NPN 11.5 500 50 NPN NPN 14 1000 15 NPN 14 1000 15 NPN NPN NPN PNP 18 500 -14 PNP 17 500 -15 PNP 16.5 500 -30 PNP 15.5 500 -30 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 16 18 13 13 13 17 17 16 16 11 13 13 13 13 13 13 500 500 900 900 900 1000 1000 1000 1000 900 1000 1000 1000 1000 1000 1000 100 50 80 80 70 15 15 30 30 70 15 30 30 30 30 30
18 16 1 8 -10 12 10 11 10 11 10 12 -10 10 7.5 - 11.5 10 8 10 8 - 13.5 13 15 -10 -10 11 -5 -5 10 10 8 4 4 12 8 8 8 8 12 8 8 8 8 8 8 12 15 7.5 7.5 7.5 10 10 10 10 13.5 5.5 8 7 7 7 8 8
0.5 1 1.8 0.5 1 2 0.5 1 2 -70 -10 100 10 15 10 2 70 10 - 3.75 50 10 3.3 30 6 3.5 15 10 3 15 10 2 14 10 2.5 0.5 1 1.8 0.5 1 1.8 2.5 -15 -10 2.5 2.4 -30 -5 2.4 100 50 80 80 70 15 15 30 30 45 70 15 30 30 30 30 30 10 8 4 4 12 8 8 8 8 10 12 8 8 8 8 8 8 1.7 1.7 1.7 1.7 2.7 1.3 1.9 1.9 1.9 1.5 1.5
3 2.1 3 3 3 2.5 2.5 2.3 2.3 3 2.7 3 3 3 2.1 2.1
Bold = Highly recommended product Bold Red = New, highly recommended product ^ = AEC-Q101 qualified (some limitations apply)
78
NF (typ) (dB) -
RF wideband transistors generation 4 - 4.5

PL(1dB) (typ) (dBmW)
P tot (max) (mW)
GUM (typ) (dB)
IP3 (typ) (dBm)
@ f = (MHz)
@ f = (MHz)
@ f = (MHz)
@ IC = (mA)
@ f = (MHz)
@ IC = (mA)
@ IC = (mA)
VCEO (max) (V)
f T (typ) (GHz)
IC (max) (mA)
NF (typ) (dB)
Generation
Package
BFG505 BFG505/X BFG505W BFG505W/X BFG505W/XR BFG520 BFG520/X BFG520/XR BFG520W BFG520W/X BFG540 BFG540/X BFG540/XR BFG540W BFG540W/X BFG540W/XR BFG541 BFM505 BFM520 BFQ540 BFQ67 BFR505 BFR505T BFR520 BFR520T BFR540 BFS505 BFS520 BFS540 PBR941 PBR951 PRF947 PRF949 PRF957 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR
4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4.5 4.5 4.5 4.5
19 19 19 19 19 20 20 20 20 20 21 21 21 21 21 21 21 19 20 21 14 19 19 20 20 21 19 20 21 20 21 20 20 21 30 30 31 31
SOT143B 9 SOT143B 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT223 9 SOT363A 9 SOT363A 9 SOT89 9 SOT23 8 SOT23 9 SOT416 9 SOT23 9 SOT416 9 SOT23 9 SOT323 9 SOT323 9 SOT323 9 SOT23 8 SOT23 8 SOT323 8.5 SOT416 9 SOT323 8.5 SOT143R SOT343R SOT143R SOT343R 14 14 14 14
15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 8 8 15 10 15 15 15 15 15 15 15 15 10 10 10 10 10 6 6 6 6
18 18 18 18 18 70 70 70 70 70 120 120 120 120 120 120 120 18 70 120 50 18 18 70 70 120 18 70 120 50 100 50 50 100 10 10 35 35
150 150 500 500 500 300 300 300 500 500 400 400 400 500 500 500 650 500 1000 1,200 300 150 150 300 150 500 150 300 500 360 365 250 150 270 60 60 210 210
NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
Polarity
Curve
Type
13 13 12 12 12 13 13 13 11 11 11 11 11 10 10 10 9 10 9 8 10 10 9 9 7 10 9 8 9.5 8 10 10 9.2
2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 1800 1800 1800 1800
5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 20 15 5 5 20 20 40 5 20 40 15 30 15 15 30 5 5 15 15
6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6 3 3 3 3
1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.1 1.1 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.1 1.2 1.9 1.7 1.2 1.2 1.1 1.1 1.3 1.2 1.1 1.3 1.4 1.3 1.5 1.5 1.3 -
900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 1000 900 900 900 900 900 900 900 900 1000 1000 1000 1000 1000 -
5 5 5 5 5 20 20 20 5 5 10 10 10 10 10 10 10 1 5 40 15 5 1.25 5 5 10 1.25 5 10 5 5 5 5 5 -
6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 8 6 6 6 6 8 6 6 8 6 6 6 6 6 -
1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.85 1.85 2.1 2.1 2.1 2.1 2.1 2.1 2.1 1.9 1.9 2.7 1.9 1.9 1.9 1.9 2.1 1.9 1.9 2.1 2 2 2.1 2.1 1.8 1 1 1.1 1.1
NF (typ) (dB)
2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000
1.25 1.25 1.25 1.25 1.25 5 5 5 5 5 10 10 10 10 10 10 10 5 5 15 5 1.25 5 5 10 1.25 5 10 5 5 5 5 5 1 1 3 3
6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6 3 3 3 3
4 4 4 4 4 17 17 17 17 17 21 21 21 21 21 21 21 4 5 17 17 21 4 17 21 1.8 1.8 8.7 8.7
6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 3 3 3 3
900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 -
@ IC = (mA)
@ VCE = (V)
5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 -
10 10 10 10 10 26 26 26 26 26 34 34 34 34 34 34 34 10 10 26 26 34 10 26 34 8.5 8.5 19.4 19.4
5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 5 5 15 15
@ VCE = (V) 6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 3 3 3 3 @ VCE = (V) 1 2 2 2 2 2 5 5 5 5 2 2 2 2 2 79
@ IC = (mA)
@ VCE = (V)
@ VCE = (V)
@ VCE = (V)
NPN 18 NPN 18 NPN 18.3 NPN 18.3
1800 5 1800 5 1800 15 1800 15
RF wideband transistors generation 5 - 7

GUM (typ) (dB) PL(1dB) (typ) (dBmW) P tot (max) (mW) IP3 (typ) (dBm) @ f = (MHz) @ f = (MHz) @ f = (MHz) @ f = (MHz) @ IC = (mA)
@ VCE = (V)
@ VCE = (V)
@ IC = (mA)
@ IC = (mA)
@ IC = (mA)
@ VCE = (V)
VCEO (max) (V)
f T (typ) (GHz)
IC (max) (mA)
NF (typ) (dB)
Generation
Package
BFG21W BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F
5th 5th 5th 5th 5th 5th 5th 6th 6th 6th 6th 7th 7th 7th 7th 7th
32 25 26 27 27 27 29 34 35 36 37 38 33 39 40 41
SOT343R SOT343R SOT343R SOT343F SOT343R SOT343R SOT343R SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F
17 22 25 25 25 21 40 40 40 40 70 70 70 70 70
4.5 500 4.5 3.6 4.5 12 4.5 30 4.5 30 4.5 30 4.5 250 5 10 5 30 5 70 5 100 2.8 10 2.8 40 2.8 30 2.8 70 2.8 100
600 16 54 135 135 135 360 50 130 200 300 30 136 130 200 250
NPN NPN NPN NPN NPN NPN NPN
Polarity
Curve
Type
10 22 21 23 22 20 16
1900 2000 2000 2000 2000 2000 2000 5800 2400 1500 1500 12000 5800 5800 2400 2400
1 3 10 25 25 25 80 8 25 60 90 8 25 25 60 90
3.6 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2
1 0.9 0.8 0.8 0.8 1.2 0.75 0.58 0.6 0.7 0.9 0.47 0.56 0.5 0.56
900 900 900 900 900 900 2400 1500 1500 1500 5800 2400 2400 1500 1500
1 1 2 2 2 8 1 5 20 50 2 5 5 20 50
2 2 2 2 2 2 2 2 2 2 2 2 2 2 2
1.6 1.2 1.2 1.2 1.2 1.8
NF (typ) (dB)
2000 2000 2000 2000 2000 2000
1 1 2 2 2 8
2 2 2 2 2 2 2 2 2 2 2 2 2 2 2
5 1 5 2 12 2 12 2 12 2 20 3.6 8 2 -
900 1 6 1 2000 10 15 10 2000 25 22 25 2000 25 22 25 2000 25 22 25 2000 1 28 80 - 14 8 - 23 25 - 30 60 - 35 90 - 14.5 8 5800 25 19 25 - 20.5 25 - 23 60 - 24 90
NPN 21 NPN 28 NPN 28.5 NPN 25.6 NPN 16.5 NPN 18 NPN 20.3 NPN 25 NPN 20.4
1.4 5800 1 0.73 2400 5 0.75 2400 20 0.9 2400 50 1.7 12000 2 0.7 5800 5 1 5800 5 0.6 2400 20 0.7 2400 50
* = check status at 3.1 new products, as this type has not been released for mass production. Bold = Highly recommended product Bold Red = New, highly recommended product
@ IC = (mA)
@ VCE = (V)
3.4
3.4.1
RF ICs
RF MMIC amplifiers and mixers
RF MMIC amplifiers and mixers selection guide on www.nxp.com/mmics Easy-to-use parametric filters help you to choose the right zRF MMIC for your design. Why choose NXP's RF MMIC amplifiers and mixers ` Reduced RF component count ` Easy circuit design-in ` Reduced board size ` Short time-to-market ` Broad portfolio ` Volume delivery ` Short lead time General purpose wideband amplifiers (50 )
@ Type BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 BGA2712 BGM1011 BGM1012 BGM1013 BGM1014 BGA2714 BGA2715 BGA2716 BGA2717 Notes:
(1)
Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363
Vs (V) 5 3 3 5 5 5 5 3 5 5 3 5 5 5
Fu(1) Is @-3 dB (mA) (GHz) 12.6 3.6(2) 5.7 1.9 33.3 2.4 24.4 2.8 23.5 3.6 12.3 3.2 25.5 3.6 14.6(2) 27.5 2.1 2.5 21.0 (2) 4.58 2.7 3.3 4.3(2) 3.2 15.9(2) 8.0 3.2
(2)
NF (dB) 4.8 1.9(2) 4.5 4.9 4.0 3.9 4.7 4.8 4.6 4.2 2.2 2.6 5.3 2.3(2)
Psat (dBm) 2.8 -2.3 13.2(2) 10.5 12.5 4.8 13.8 9.7 14.0 12.9 -3.4 -4.0 11.6 1.4
@ 1 GHz Gain(2) (dB) 13.1 21.8 21.4 23.2(2) 22.7 21.3 30 (2) 20.1 35.5(2) 32.3 20.4 21.7 22.9 23.9
(3)
P1dB OIP3 (dBm) (dBm) -0.7 8.3 -9.2 -1.9 12.1 21.9 7.2 18.6 8.3 22 0.2 11 12.2 23 5.6 18 12.0 22.7 11.2 20.5 -7.9 2.1 -8.0 2.3 8.9 22.2 -2.6 10.0
100 MHz 13.0 14.8 20.3 22.4 22.2 20.8 25.0 19.5 35.2 30.0 20.8 13.3 22.1 18.6
Gain(3) (dB) @ 2.2 2.6 GHz GHz 14.1 13.8 17.6 15.0 20.4 17.9 23.2 21.8 23.0 22.1 21.9 21.2 37.0 32.0 20.4 19.9 31.8 29.7 34.1 30.5 20.8 19.4 23.3 22.1 22.8 22.1 25.1 24.0
3.0 GHz 12.7 11.9 15.5 19.3 21.1 19.3 28.0 18.7 26.1 26.4 16.8 20.1 20.8 22.1
Vs (V) 6 4 4 6 6 6 6 4 6 6 4 6 6 6
Limits Is (mA) 20 15 50 34 35 25 35 50 35 30 10 8 25 15
P tot (mW) 200 200 200 200 200 200 200 200 200 200 200 200 200 200
Upper -3 dB point, to gain at 1 GHz.
Optimized parameter
Gain = |S21|2
New general purpose wideband amplifiers (50 )

@ Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGA2802 BGA2803 BGA2870 Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 Vs (V) 3.3 3.3 3.3 3.3 5 5 5 3.3 3 2.5 Fu Is @-3 dB (mA) (GHz) 9.7 >3 12.4 3 16.4 >3 19.6 2.3 7.7 >3 22.7 2.6 15.4 >3 13 2.8 5.8 2.8 16 1.7 NF (dB) 3.4 3.6 3.4 2.8 3.9 3.7 3.6 4.1 3.6 3.7 @ 1 GHz Gain (dB) 20.2 22.1 25.4 31.2 23.3 31.9 23.4 25.8 23.5 31 OIP3 (dBm) 11.5 13.6 18.2 16.1 8.7 20.9 17.7 16 5 12 250 (MHz) 20 22.3 26.2 32 22.9 31.2 23 25 23.6 31 Gain (dB) @ 950 1550 (MHz) (MHz) 20.2 20.6 22.1 23 25.4 25.5 31.2 30.6 23.2 23.9 31.8 32.6 23.3 24 25 25 23.4 23.2 31# 2150 (MHz) 20.6 23.8 25.8 28.7 24 31.4 24.3 25.5 23 -
# = Gain at 750 MHz No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.
General purpose low noise wideband amplifiers

@ Type BGA2001 BGA2002^ BGA2003 BGA2011 BGA2012 Notes:
(1)
Package SOT343R SOT343R SOT343R SOT363 SOT363

(2)
Vs (V) 2.5 2.5 2.5 3 3

(3)
Is (mA) 4 4 10 (2) 15 7 |S21|2
NF (dB) 1.3 1.3 1.8 1.5 -
@ 900 MHz Gain IIP3 (dB) (dBm) -7.4 22(1) -7.4 22(1) 24 (1) -6.5 10 19(3) -
@1800 MHz NF Gain IIP3 (dB) (dB) (dBm) 1.3 19.5(1) -4.5 1.3 19.5(1) -4.5 1.8 16(1) -4.8 10 1.7 16(3)
100 (MHz) 20 20 26 24 22
Gain(3) (dB) @ 1 2.6 (GHz) (GHz) 17.1 11.6 17.1 11.6 18.6 11.1 14.8 8 18.2 11.6
3.0 (GHz) 10.7 10.7 10.1 6.5 10.5
Vs (V) 4.5 4.5 4.5 4.5 4.5
Limits Is (mA) 30 30 30 30 15
Ptot (mW) 135 135 135 135 70
MSG
Adjustable bias
Bold = Highly recommended product Bold Red = New, highly recommended product ^ = AEC-Q101 qualified (some limitations apply) 80 NXP Semiconductors RF Manual 15th edition
SiGe:C LNAs (for e.g. GPS)

Supply voltage Vcc (V) Min Max Min
@ 1.575 GHz
Supply current Icc (mA) Typ Max Min Insertion power gain |s21|2 (dB) Typ Max Noise figure NF (dB) Typ Vcc = 1.8 V, Min Vcc = 1.8 V, Typ Input power at 1 dB gain compression PI(1 dB) (dBm) Vcc = 2.5 V, Icc = 5 mA Vcc = Vcc = 2.85 V, 2.85 V, Typ Min Vcc = 1.8 V, Min Vcc = 1.8 V, Typ Input third-order intercept point f1 = 1713 MHz, f2 = 1851 MHz IP3i (dBm) Vcc = 2.5 V, Icc = 5 mA Vcc = 2.85 V, Min Vcc = 2.85 V, Typ
Type
Package
BGU7003 SOT891 2.2 2.85 3 BGU7003W SOT886 2.2 2.85 3 BGU7004^ SOT886 1.5 2.85 BGU7005 SOT886 1.5 2.85 BGU7007 SOT886 1.5 2.85 BGU7008^ SOT886 1.5 2.85 ^AEC-Q101 qualified (some limitations apply)
15 16 18.3 20 0.8 15 16 18.3 20 0.8 4.5 16.5* 0.9 -14 4.5 16.5* 0.9 -14 4.8 18** 0.9 -14 4.8 18** 0.9 -14 * = 16.5 dB without jammer / 17.5 dB with jammer
-20 0 -20 0 -11 -11 -8 5 9 -11 -11 -8 5 9 -11 -11 -8 5 9 -11 -11 -8 5 9 ** = 18.5 dB without jammer / 19.5 dB with jammer
5 5 5 5
12 12 12 12
LNAs for set-top boxes (75 )

Type Package Frequency range (MHz) BGU7033 BGU7032 BGU7031 BGU7041 BGU7042 SOT363 SOT363 SOT363 SOT363 SOT363 40 - 1000 40 - 1000 40 - 1000 40 - 1000 40 - 1000
(2)
@ Mode GP 10 dB GP 5 dB Bypass GP 10 dB Bypass GP 10 dB GP 10 dB GP 10 dB Bypass VCC (V) 5 5 5 5 5 5 3.3 3.3 3.3 ICC (mA) 43 43 4 43 4 43 38 38 3
Gain (1) (dB) 10 5 -2 10 -2 10 10 10 -2
NF (dB) 4.5 6 2.5 4.5 2.5 4.5 4 4 2.5
PL(1dB) (dBm) 14 9 10 13 10 13 12 12 -
OIP3 (dBm) 29 29 29 29 29 29 29 29 29
FL (2) (dB) -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2
RLout (dB) 12 12 8 12 8 12 12 12 10
RLin (dB) 18 17 8 18 8 18 21 21 10
Notes: (1) Gain = Programmable gain (GP)
Flatness of frequency response = FL
LNAs for wireless infrastructures (50 )

Type BGU7051 BGU7052 BGU7053 Package SOT650 SOT650 SOT650 Vsupply (typ) (V) 3.3 3.3 3.3 @ IC = (mA) 65 65 65 @f= (MHz) 900 1900 2500 Gass (typ) NF (typ) PL(1dB) (typ) OIP3 (typ) (dB) 20.9 20.1 20 (dB) 0.7 0.9 1 (dBm) 17.8 18 18 (dBm) 34 35.5 35 IRL (dB) 22 20 20 ORL (dB) 15.8 15 15
General purpose medium power amplifiers (50 )

@ Type BGA6289 BGA6489 BGA6589 Notes:
(1)
Package SOT89 SOT89 SOT89
Vs (1) (V) 4.1 5.1 4.8
Is (mA) 84 78 81
NF (dB) 3.5 3.1 3.0

(2)
@ 900 MHz Gain(2) OIP3 (dB) 15 20 22 (dBm) 31 33 33
PL 1 dB (dBm) 17 20 21
NF (dB) 3.7 3.3 3.3
@1800 MHz Gain(2) OIP3 (dB) 13 16 17 (dBm) 28 30 32
PL(1dB) (dBm) 15 17 20
Gain(2) 2.5 GHz 12 15 15
Vs (1) (V) 6 6 6
Limits Is (mA) 120 120 120
Ptot (mW) 480 480 480
Device voltage without bias resistor.
Gain = |S21|2
General purpose medium power amplifiers for all 400 - 2700 applications (50 )
supply Type BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* Package SOT908 SOT89 SOT908 SOT89 SOT908 leadless leaded leadless leaded leadless f (MHz) 400 - 2700 400 - 2700 400 - 2700 400 - 2700 400 - 2700 Vcc Typ (V) 5 5 5 5 5 Icc Typ Max (mA) (mA) 130 200 110 180 325 170 Min (V) 0 0 0 shutdown control VI(D)L(SHDN) Max (V) 0.7 0.7 0.7 VI(D)H(SHDN) Min (V) 2.5 2.5 2.5 Max (V) Vbias Vbias Vbias II(D)L(SHDN) Typ (A) 4 4 4 RF performance Typ @ f = 940 MHz Gp PL(1dB) OIP3 NF (dB) (dBm) (dBm) (dB) 22 25 38 5 22 24 38 3 20 28 44 3 19 28 41 3 18 30 45 4 RF performance Typ @ f = 1960 MHz Gp PL(1dB) OIP3 NF (dB) (dBm) (dBm) (dB) 16 24 38 5 16 25 38 4 13 28 43 5 12 28 43 4 12 30 45 4
* = check status at 3.1 new products, as this type has not been released for mass production. Bold = Highly recommended product Bold Red = New, highly recommended product
81
VGAs for wireless infrastructures

Type Package Control interface Vsup (V) BGA7202 BGA7204 BGA7350 BGA7351 SOT617 SOT617 SOT617 Analog Parallel, serial Parallel, digital 5 5 5 Isup (mA) 710 160 240 frequency (MHz) 700 1450 1450 2200 700 2750 1450 2100 2100 2750 50 250 Gain @ minimum attenuation @ maximum attenuation range Gain OIP3 NF Gain OIP3 NF (dB) (dB) (dBm) (dB) (dB) (dBm) (dB) 23 23 41 7 0 30 30 23 23 41 7 0 30 30 31.5 24 37 6.5 -7.5 19 38 30.5 17 36 6.5 -13.5 10 38 29.5 16 34 7.5 -13.5 10 38 24 18.5 44 6 -5.5 50 30 28 22 45 6 -6 50 34
BGA7350 and BGA7351 are dual, independently controlled, receive IF VGAs on one chip.
2-stage variable gain linear amplifier

@ Type BGA2031/1 Notes:
(1)
Package SOT363
(2)
Vs (V) 3
Is (mA) 51
Frequency Gain(1) Range (dB) 800-2500 24
@ 900 MHz DG(2) P1dB (dB) (dBm) 62 11
ACPR (dBc) 49
Gain(1) (dB) 23
@1900 MHz DG(2) P1dB (dB) (dBm) 56 13
ACPR (dBc) 49
Vs (V) 3.3
Limits Is (mA) 77
P tot (mW) 200
Gain = GP, power gain.
DG = Gain control range
Wideband linear mixer

@ Type BGA2022 Notes:
(1)
Package SOT363
Vs (V) 3
(2)
Is (mA) 6
RF Input Frequency Range 800 - 2500
IF Output Frequency Range 50 - 500
NF (dB) 9
@ 880 MHz Gain(1) OIP3 (dB) (dBm) 5 4
@1900 MHz NF Gain(1) OIP3 (dB) (dB) (dBm) 9 6 10
Vs (V) 4
Limits Is (mA) 10
Ptot (mW) 40
Gain = GP, power gain.
DG = Gain control range
3.4.2
Wireless infrastructure ICs

fIN(REF) VCC Typ (MHz) (V)
3.3
Low noise LO generator for wireless infrastructures

ICC Typ (mA)
140
Type
Package
Noise 1 MHz offset @5.3 GHz Typ (dBc/Hz)

-131
Output buffer (Po) Typ (dBm)

0 -10
BGX7300*
SOT617
10-160
IQ modulator for wireless infrastructures

Bandwidth of IQ modulator Type Package (MHz)
BGX7100*
Output ICC NFL (Output noise floor) OIP3
Voltage gain GV
VCC
(V)
5
(mA)
180
(dBm/Hz)
-159
(dBm)
27
(dB)
1.5
SOT616
650
Dual mixer for wireless infrastructures

Second order spur rejection (2RF-2LO) (dBc)
BGX7220* BGX7221*
VCC
ICC
Frequency range
Type
Package
NFssb (small signal noise figure) (dB)

10 10
IIP3
Conversion gain
(V)
5 5
(mA)
380 380
(GHz)
0.7 - 1.2 1.7 - 2.7
(dBm)
26 26
(dB)
7.5 8.5
SOT617 SOT617
60 60
3.4.3
Satellite LNB RF ICs

Input freq range Vcc I Gconv NF OIP3 LO Freq Integrated Phase noise density (degrees RMS)
Type
Package
(V)
TFF1014HN TFF1015HN TFF1017HN TFF1018HN
(mA)
52 52 52 52
(dB)
36 39 42 45
(dB)
7 7 7 7
(dB)
13 13 13 13
(GHz)
9.75 / 10.6 9.75 / 10.6 9.75 / 10.6 9.75 / 10.6 1.5 1.5 1.5 1.5
SOT763-1 SOT763-1 SOT763-1 SOT763-1
10.7 - 12.75 10.7 - 12.75 10.7 - 12.75 10.7 - 12.75
5 5 5 5
Bold Red = New, highly recommended product 82 NXP Semiconductors RF Manual 15th edition
3.4.4
Low noise LO generators for VSAT and general microwave applications
Why choose NXPs low noise LO generators ` Lowest total cost of ownership ` Alignment-free concept ` Easy circuit design-in ` Improved LO stability Low noise LO generators for VSAT applications
fIN(REF) Type Package Typ (MHz)
TFF1003HN TFF1007HN TFF1008HN
VCC
ICC Typ (mA)

100 100 130
PLL phase noise @ N=64, @100 kHz Max (dBc/Hz)

-92 -104 -104
PLL fo(RF) (GHz)

12.8 - 13.05 14.62 - 15
Output buffer Po Typ (dBm)

-5 -3 -3
Input Si Min (dBm)

-10 -10 -10
RLout(RF) Max (dB)

-10 -10 -10
(V)
3.3 3.3 3.3
SOT616 SOT616 SOT616
50 - 815 230.46 - 234.38
220.91 - 225.2
14.1 - 14.4
Low noise LO generators for general microwave applications

83 Type Package fIN(REF) VCC Typ (V) 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 ICC Typ (mA) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 PLL phase noise @ N=64 @ 100 kHz @ 10 MHz (dBc/Hz) (dBc/Hz) -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 PLL fo(RF) Typ (GHz) 7 7.33 7.67 8.02 8.4 8.79 9.2 9.4 9.63 10.07 10.54 11.03 11.55 12.09 12.65 13.2 13.85 14.5 15.18 Output buffer Po RLout(RF) Typ Max (dBm) (dB) -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 Input Si Min (dBm) -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 Frequency band C C C C. X X X X X X X Ku Ku Ku Ku Ku Ku Ka Ka Ka
(MHz) TFF11070HN* SOT616 27 - 448 TFF11073HN* SOT616 28 - 468 TFF11077HN* SOT616 29 - 490 TFF11080HN* SOT616 31 - 513 TFF11084HN SOT616 32 - 537 TFF11088HN SOT616 34 - 562 TFF11092HN SOT616 35 - 588 TFF11094HN SOT616 36-600 TFF11096HN SOT616 37 - 616 TFF11101HN* SOT616 38 - 644 TFF11105HN SOT616 40 - 674 TFF11110HN* SOT616 42 - 706 TFF11115HN SOT616 44 - 738 TFF11121HN* SOT616 46 - 773 TFF11126HN* SOT616 48 - 809 TFF11132HN* SOT616 51 - 846 TFF11139HN* SOT616 53 - 886 TFF11145HN SOT616 55 - 927 TFF11152HN SOT616 58 - 970 Bold = Highly recommended product Bold Red = New, highly recommended product * = to be released on request, please consult your local NXP representative or authorized distributor
Min (GHz) 6.84 7.16 7.49 7.84 8.21 8.59 8.99 9.00 9.41 9.85 10.31 10.79 11.29 11.81 12.36 12.9 13.54 14.17 14.83
Max (GHz) 7.16 7.49 7.84 8.21 8.59 8.99 9.41 9.6 9.85 10.31 10.79 11.29 11.81 12.36 12.94 13.5 14.17 14.83 15.52
3.5
3.5.1
RF MOS transistors
JFETs
JFET selection guide on www.nxp.com/rffets Easy-to-use parametric filters help you to choose the right junction field effect transistor for your design.
Why choose NXPs JFETs ` Reliable volume supplier ` Short lead time ` Broad portfolio
N-channel junction field-effect transistors for switching

VDS Type BSR56 BSR57 BSR58 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 J108 J109 J110 J111 J112 J113 PMBF4391 PMBF4392 PMBF4393 Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54 SOT54 SOT54 SOT23 SOT23 SOT23 (V) max 40 40 40 25 25 25 40 40 40 25 25 25 40 40 40 40 40 40 IG (mA) max 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 I DSS (mA) min max 50 20 100 8 80 80 40 10 20 5 2 80 40 10 20 5 2 50 150 25 75 5 30 -Vgsoff (V) min max 4 10 2 6 0.8 4 3 10 2 6 0.5 4 3 10 1 5 0.5 3 3 10 2 6 0.5 4 3 10 1 5 0.5 3 4 10 2 5 0.5 3 CHARACTERISTICS RDSON C rs () (pF) max min max 25 5 40 5 60 5 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 30 3.5 60 3.5 100 3.5 t on (ns) typ 4 4 4 13 13 13 4 4 4 13 13 13 max 15 15 15 typ 6 6 6 35 35 35 6 6 6 35 35 35 t off (ns) max 25 50 100 20 35 50
P-channel junction field-effect transistors for switching

VDS Type PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 J174 J175 J176 J177 Package SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54 (V) max 30 30 30 30 30 30 30 30 IG (mA) max 50 50 50 50 50 50 50 50 I DSS (mA) min max 20 135 7 70 2 35 1.5 20 20 135 7 70 2 35 1.5 20 -Vgsoff (V) min max 5 10 3 6 1 4 0.8 2.25 5 10 3 6 1 4 0.8 2.25 CHARACTERISTICS RDSON C rs () (pF) max min max 85 typ.4 125 typ.4 250 typ.4 300 typ.4 85 typ.4 125 typ.4 250 typ.4 300 typ.4 t on (ns) typ 7 15 35 45 7 15 35 45 max typ 15 30 35 45 15 30 35 45 t off (ns) max -
N-channel junction field-effect transistors for general RF applications

VDS Type Package (V) max IG (mA) max I DSS (mA) min max CHARACTERISTICS Vgsoff |Yfs| (V) (mS) min max min max 3 3 3 3 3 3 4.5 4.5 4.5 12 16 20 35 2.5 4 6 7 1 1.5 >1 > 10 > 10 > 10 10 4 4.5 6.5 6.5 6.5 6.5 6.5 6.5 20 25 30 C rs (pF) min Typ.=1.1 Typ.=1.1 Typ.=1.1 0.8 0.8 0.8 0.8 0.8 0.8 2.1 2.1 2.1 typ=1.9 0.4 0.4 0.4 0.4 1.5 1.5 1.5 1.3 1.3 1.3 1.3 max 2.7 2.7 2.7 0.5 0.5 0.5 0.5 2.5 2.5 2.5 2.5
DC, LF and HF amplifiers BF245A SOT54 30 10 2 6.5 <8 BF245B SOT54 30 10 6 15 <8 BF245C SOT54 30 10 12 25 <8 BF545A SOT23 30 10 2 6.5 0.4 7.5 BF545B SOT23 30 10 6 15 0.4 7.5 BF545C SOT23 30 10 12 25 0.4 7.5 BF556A SOT23 30 10 3 7 0.5 7.5 BF556B SOT23 30 10 6 13 0.5 7.5 BF556C SOT23 30 10 11 18 0.5 7.5 Pre-amplifiers for AM tuners in car radios BF861A SOT23 25 10 2 6.5 0.2 1.0 BF861B SOT23 25 10 6 15 0.5 1.5 BF861C SOT23 25 10 12 25 0.8 2 BF862 SOT23 20 10 10 25 0.3 2 RF stages FM portables, car radios, main radios & mixer stages SOT23 20 10 0.7 3 typ. 0.8 BF510 (1) SOT23 20 10 2.5 7 typ. 1.5 BF511(1) (1) SOT23 20 10 6 12 typ. 2.2 BF512 SOT23 20 10 10 18 typ. 3 BF513 (1) Low-level general purpose amplifiers BFR30 SOT23 25 5 4 10 <5 BFR31 SOT23 25 5 1 5 < 2.5 General purpose amplifiers BFT46 SOT23 25 5 0.2 1.5 < 1.2 AM input stages UHF/VHF amplifiers PMBFJ308 SOT23 25 50 12 60 1 6.5 PMBFJ309 SOT23 25 50 12 30 1 4 PMBFJ310 SOT23 25 50 24 60 2 6.5 PMBFJ620 SOT363 25 50 24 60 2 6.5
(1)
Bold = Highly recommended product Asymmetrical
84
3.5.2
MOSFETs
RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric filters help you to choose the right RF MOSFET for your design.
Why choose NXP Semiconductors MOSFETs ` Reference designs for TV tuning ` Short lead time ` Broad portfolio ` Smallest packages ` 2-in-1 FETs for tuner applications ` Reliable volume supply ` Best performance MOSFETs for TV tuning N-channel, single MOSFETs for switching
VDS Type Package (V) max 10 3 3 3 3 3 3 3 3 3
BSS83 SOT143 Silicon RF Switches BF1107 SOT23 SOT143B BF11085) SOT143R BF1108R5) BF1108W SOT343 BF1108WR SOT343R BF1118 SOT143B BF1118R SOT143R BF1118W SOT343 BF1118WR SOT343R
typ -
max 5 -
enh. depl. depl. depl. depl depl depl depl depl depl
10 10 10 10 10 10 10 10 10
100 (3) 100 (3) 100 (3) 100 100 100 100 100 100
7(4) 7(4) 7(4) 7(4) 7(4) 7(4) 7(4) 7(4) 7(4)
20 20 20 20 20 22 22 22 22
2.5 3 3 3 3 3 3 3 3
30 30 30 30 30 30 30 30 30
N-channel, dual-gate MOSFETs

VDS Type Package (V) max 12 12 12 20 20 20 20 12 12 12 7 7 7 11 11 11 7 7 7 7 7 7 ID (mA) max 40 40 40 20 40 30 30 30 30 30 30 30 30 30 30 30 30 30 30 40 40 40 I DSX (mA) min max 3 3 3 4 4 4 2 2 2 8 8 8 8 8 8 8 8 8 12 12 12 27 27 27 25 20 20 18 18 18 16 16 16 16 16 16 13 13 13 20 20 20 V(th)gs (V) min max 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 -2 -2 -2 -2.5 -1.3 -2.5 -2.5 -2.0 -2.0 -2.5 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1(6) 1(6) 1(6) 1(6) 1(6) 1(6) CHARACTERISTICS |Yfs| C is C os (mS) (pF) (pF) min max typ typ 36 36 36 10 20 15 15 21 21 22 25 25 25 24 24 24 22 22 22 36 36 36 50 50 50 30 30 30 50 50 50 3.1 3.1 3.1 2.1 4 2.5 2.3 2.1 2.1 2.1 2.2(9) 2.2(9) 2.2(9) 2.2(9) 2.2(9) 2.2(9) 2.2 2.2 2.2 3.6 3.6 3.6 1.7 1.7 1.7 1.1 2 1 0.8 1.05 1.05 1.05 1.2(8) 1.2(8) 1.2(8) 1.3 (8) 1.3 (8) 1.3 (8) 1.3 1.3 1.3 2.3 2.3 2.3 F @ 800 MHz (dB) typ 1.5 1.5 1.5 1 1.2(7) 1(7) 1.8 1 1 1 1.7 1.7 1.7 1.5 1.5 1.5 2 2 2 2 2 2 VHF UHF
(1) (6) (2) (7)
With external bias BF908 SOT143 BF908R SOT143R BF908WR SOT343R BF991 SOT143 BF992 SOT143 BF994S SOT143 BF996S SOT143 BF998 SOT143 BF998R SOT143R BF998WR SOT343R Fully internal bias BF1105 SOT143 BF1105R SOT143R BF1105WR SOT343R BF1109 SOT143 BF1109R SOT143R BF1109WR SOT343R Partly internal bias BF904A SOT143 BF904AR SOT143R BF904AWR SOT343R BF909A SOT143 BF909AR SOT143R BF909AWR SOT343R
X X X X X X X X X X X X X X X X X X X X X
X X X X X X X X X X X X X X X X X X X
(3) (8) (4) (9) (5)
Asymmetrical VGS (th) VGS(th) @ 200 MHz ID C OSS VSG C ig Depletion FET plus diode in one package
85
ID (mA) max 50
I DSS (mA) min max -
V(p)GS (V) min max 2(1) 0.1(2)
RDSON () max 45
CHARACTERISTICS C rs t on (pF) (ns) min max typ max typ.0.6 1
t off (ns)
|S21(on)|2 (dB) max -
|S21(off)|2 (dB) min -
MODE
N-channel, dual-gate MOSFETs

VDS Type Package (V) max 14 14 14 7 7 7 7 10 10 10 10 10 10 10 10 10 6 6 10 7 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 ID (mA) max 30 30 30 30 30 30 40 301) 301) 301) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 I DSX (mA) min 8 8 8 8 8 8 12 11 11 11 8 8 8 11 8 8 14 9 8 8 14 9 3 3 13 9 14 9 14 10 14 9 11 11 11 8 8 8 13 14 10 max 13 13 13 16 16 16 20 19 19 19 16 16 16 19 16 16 24 17 16 16 23 17 6.5 6.5 23 19 24 17 24 20 24 17 19 19 19 16 16 16 23 24 20 V(th)gs (V) min max 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 1.2(6) 1.2(6) 1.2(6) 1(6) 1(6) 1(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2 1.2(6) 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 1 1 1 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 1 CHARACTERISTICS |Yfs| C is (mS) (pF) min max typ 24 24 24 25 25 25 36 23 23 23 25 25 25 23 25 25 26 28 26 26 33 29 17 17 25 26 26 28 26 25 26 28 25 25 25 28 28 28 25 26 25 33 33 33 35 35 35 40 40 40 35 40 40 41 43 40 40 48 44 32 32 40 41 41 43 41 40 41 43 40 40 40 43 43 43 35 41 40 2.2 2.2 2.2 2.2 2.2 2.2 2.8 (9) 2.6 2.6 2.6 1.7 1.7 1.7 2.6 1.7 1.7 2.2 2 1.8 2.0 2.4 1.7 2.4 1.7 2.2 1.8 2.2 2 2.1 2.1 2.2 2 2.1 2.1 2.1 1.7 1.7 1.7 2.2 2.1 2.1 C os (pF) typ 1.4 1.4 1.4 1.2(8) 1.2(8) 1.2(8) 1.6(8) 0.9 0.9 0.9 0.85 0.85 0.85 0.9 0.85 0.85 0.9 0.85 0.75 0.85 1.1 0.85 1.1 0.85 0.9 0.8 0.9 0.85 0.8 0.85 0.9 0.85 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.8 0.85 F @ 800 MHz (dB) typ 2 2 2 1.7 1.7 1.7 2 1.9 1.9 1.9 1.1 1.1 1.1 1.9 1.1 1.1 1.4 1.4 1.2 1.4 1.6 1.4 1.1 1.0 1.4 1.4 1.4 1.4 1.1 1.4 1.4 1.4 1.3 1.3 1.3 1.1 1.1 1.1 1.4 1.1 1.4 VHF UHF
Partly internal bias BF1100 SOT143 BF1100R SOT143R BF1100WR SOT343R BF1101 SOT143 BF1101R SOT143R BF1101WR SOT343R SOT363 BF1102(R)(10) BF1201 SOT143 BF1201R SOT143R BF1201WR SOT343R BF1202 SOT143 BF1202R SOT143R BF1202WR SOT343R SOT363 BF1203 (11) SOT363 BF1204(10) BF1205C (11)(12)(13) SOT363 BF1205(11)(12)(13) BF1206(11) BF1206F(11) BF1207(11)(13)(14) BF1208 (11)(12)(13) SOT363 SOT363 SOT666 SOT363 SOT666
BF1208D(11)(12)(13) SOT666 BF1210 (11)(12) BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF1214(10) BF1218 (11/12/13) SOT363 SOT143 SOT143R SOT343 SOT143 SOT143R SOT343 SOT363 SOT363
X X X X X X X X X X X X X X X X X X X X X X X X X X X X -
X X X X X X X X X X X X X X X X X X X X X X X X X X X X

(1) (2) (3) (4) (5) (7) (8)
Asymmetrical VGS(th) ID VSG Depletion FET plus diode in one package @200 MHz C OSS
(9) (10) (11) (12) (13) (14)
C ig Two equal dual gate MOSFETs in one package Two low noise gain amplifiers in one package Transistor A: fully internal bias, transistor B: partly internal bias Internal switching function Transistor A: partly internal bias, transistor B: fully internal bias
N-channel, dual gate MOSFETs for set-top-boxes

CHARACTERISTICS Type Package VDS (V) max 6 6 6 6 6 ID (mA) max 30 30 30 30 30 IDSX (mA) max 19.5 23 19.5 23 23 (V) min 0.3 0.3 0.3 0.3 0.3 V(th)gs max 1 1 1 1 1 |Yfs| (mS) typ 27 27 27 27 27 Cis (pF) typ 2.5 2.5 2.5 2.5 2.5 COS (pF) typ 0.8 0.8 0.8 0.8 0.8 F @ 800 MHz (dB) typ 1.9 1.9 1.9 1.9 1.9 X-Mod @ 40 dB gain reduction (dB) typ 107 107 107 107 107
BF1215 (1)(2)(3) BF1216(1) BF1217

(1)
SOT363 SOT363 SOT343
Two low noise gain amplifiers in one package (2) Transistor A: fully internal bias, transistor B: partly internal bias (3) Internal switching function Bold = Highly recommended product
86
3.6
RF modules
CATV module selection guide on www.nxp.com/catv Easy-to-use parametric filters help you to choose the right CATV module for your design.
Why choose NXPs RF Modules ` Excellent linearity, stability, and reliability ` Rugged construction ` Extremely low noise ` High power gain ` Low total cost of ownership CATV types for Chinese (C-types) and 1 GHz GaAs HFET line-ups New in our CATV hybrid portfolio are two families of products. The C-types are specially designed for the Chinese market, customized for two major governmental projects. The GaAs HFET family includes a complete 1 GHz line-up for high-end applications around the world.
Both families will be extended in the following months to cover all of the two specific market segments. C-types (China) ` CATV push-pulls, chapter 3.6.2: BGY588C, BGE788C, CGY888C ` CATV power doublers, chapter 3.6.3: BGD712C, CGD982HCi, CGD985HCi, CGD987HCi ` CATV optical receivers, chapter 3.6.4: BGO807C, BGO807CE 1 GHz GaAs HFET high-end hybrids ` CATV push-pulls, chapter 3.6.2 : CGY1032, CGY1041, CGY1043, CGY1047, CGY1049 ` CATV power doublers, chapter 3.6.3: CGD1040Hi, CGD1042Hi, CGD1044Hi, CGD1046Hi, CGD1042H, CGD1044H
3.6.1
Type
CATV push-pulls
Frequency range (MHz) Gain (dB) 33.5 - 35.5 17.7 - 18.7 21.5 - 22.5 26.2 - 27.8 34 - 35 17.7 - 18.7 21 - 22 18 - 19 33.2 - 35.2 21 - 22 28.5 - 29.5 14.5 - 15.5 16.5 - 17.5 16.5 - 17.5 18 - 19 21 - 22 34.5 - 36.5 33.5 - 34.5 28.5 - 29.5 33.5 - 34.5 Slope (dB) 0.2 - 1.7 0.5 - 2 0.2 - 1.5 0.5 - 2.5 0.5 - 1.5 0.5 - 2.2 0.8 - 2.2 0-2 0.3 - 2.3 0 - 1.5 0.2 - 2.2 0-2 0.2 - 1.2 0.2 - 1.4 0-2 0.2 - 2 1.5 0.5 - 2.5 0.5 - 2.5 0.5 - 2.5 FL (dB) 0.5 0.2 0.2 0.4 0.3 0.2 0.2 0.1 0.6 0.2 0.45 0.3 0.5 0.3 0.2 0.2 0.25 0.5 0.5 0.2 RLIN/RLOUT (dB) 16 / 16 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 16 / 16 20 / 20 20 / 20 20 / 20 14 / 14 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 CTB (dB) -57 -59 -57 -57 -57 -55 -54 -54.5 -49 -54.5 -48 -61 X mod (dB) -62 -58 -60 -59 -60 -54 -57.5 -54 -52 -61 CSO (dB) -62 -59 -54 -57 -62 -56 -52 -62 -52 -57.5 -56 -61 @ Ch 77 77 77 77 77 85 85 110 110 110 110 49 @ Vo (dBmV) 44 44 44 44 44 44 44 44 44 44 44 44 NF @ fmax (dB) 8 8 7 6.5 6 8.5 6.5 6 8 5 6.5 8.5 8 8 6 5 4 7 6.5 5.5 Itot (mA) 345 220 220 340 325 240 240 225 325 220 340 235 240 240 225 220 280 340 340 325
BGY588C BGY585A BGY587 BGY587B BGY588N BGY685A BGY687 BGY785A BGE788C BGY787 BGE787B BGY883 BGE885 BGX885N BGY885A BGY887 CGY888C BGY835C BGY887B BGY888
40 - 550
40 - 600
40-750
40 - 870
-65 -64.5 -65 -60 -60 -63.5
-65 -64.5 -72 -60 -63
-67 -67.5 -63 -55 -60 -64
49 49 112 49 49 49
44 44 44 44 44 44
3.6.2
Type
CATV push-pulls 1 GHz

Frequency range FL 0.9 0.9 0.8 0.85 0.85 0.3 RL IN /RL OUT CTB XMOD CSO 20 / 18 20 / 18 20 / 18 20 / 18 20 / 18 20 / 20 -62 -62 -64 -62 -62 -53 -58 -58 -60 -58 -58 -54 -64 -64 -66 -64 -64 -56 @ Ch 79 NTSC channels + 75 digital channels 79 NTSC channels + 75 digital channels 79 NTSC channels + 75 digital channels 79 NTSC channels + 75 digital channels 79 NTSC channels + 75 digital channels 150 @ Vo NF @ fMAX I tot (dBmV) (mA) 44 4.3 265 44 4.2 265 44 4.5 250 44 4.5 265 44 4.4 265 40 7.5 240
Gain Slope (dB) (dB) CGY1041 21 - 22.5 1.2 - 2.7 CGY1043 23 - 24.5 1.2 - 2.7 CGY1047 27 - 28.5 1.5 - 2.5 40 - 1003 CGY1049 29 - 31 0.85 - 2.35 CGY1032 32 - 34 1.05 - 2.55 BGY1085A 18 - 19 0-2 Bold Red = New, highly recommended product Bold = Highly recommended product
87
3.6.3
Type
CATV power doublers

Frequency range (MHz) 40 - 550 Gain (dB) 18 - 19 18 - 19 18 - 19 18.2 - 18.8 18.2 - 18.8 19.5 - 20.5 20 - 20.6 16.5 - 17.5 18 - 19 18.2 - 18.8 19.5 - 20.5 19.7 - 20.3 21.2 - 21.8 22 - 24 24 - 26 19.5 - 22 22 - 23.5 23.5 - 25.5 26.5 - 28 22 - 24 24 - 26 22 - 24 23.5 - 25.5 26 - 28 Slope (dB) 0.2 - 2.2 0.2 - 2 0.2 - 2 0.5 - 1.5 0.5 - 1.5 0-2 0.5 - 1.5 0.2 - 1.6 0.2 - 2 0.4 - 1.4 0.2 - 2 0.5 - 1.5 0.5 - 1.5 1-2 1-2 0.5 - 2 0.5 - 2 0.5 - 2 0.7 - 2.2 1.5 1 0.5 - 2 0.5 - 2 0.7 - 2 FL (dB) 0.3 0.2 0.25 0.35 0.35 0.2 0.35 0.5 0.2 0.5 0.2 0.5 0.5 0.5 0.5 1 1 1 1 0.5 0.5 1 1 1 RLIN/RLOUT (dB) 20 / 20 20 / 20 20 / 20 23 / 23 17 / 17 20 / 20 23 / 23 20 / 20 20 / 20 25 / 23 20 / 20 25 / 24 22 / 25 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 21 20 / 21 20 / 20 20 / 20 20 / 20 CTB (dB) -65 -59 -58 -62 -62 -58 -61 -56.5 -57 -54 -56 -55 -66 -66 -70 -70 -70 -75 -75 -75 -66 -66 -66 X mod (dB) -68 -64 -62 -63 -63 -62 -61 -62 -62 -61 -58 -66 -66 -66 -65 -64 -68 -67 -67 -68 -68 -68 CSO (dB) -62 -63 -58 -63 -63 -61 -62 -64.5 -58 -60.5 -57 -56 -66 -66 -76 -75 -75 -70 -76 -76 -69 -69 -66 @ Ch 77 110 110 112 112 110 112 129 132 129 132 132 98 98 79 79 79 79 79 79 98 98 98 @ Vo (dBmV) 44 44 44 44 44 44 44 44 44 44 44 44 48 48 58.4 58.4 58.4 56.4 59 59 48 48 48 NF @ fmax (dB) 8 6.5 8.5 7 7 6.5 7 8 6.5 7.5 6.5 7.5 7.5 3.5 3.5 5.5 5.5 5 5 5 5 5.5 5 5 Itot (mA) 415 425 435 395 410 425 395 450 395 395 395 395 360 450 450 440 440 440 450 450 450 440 440 440
BGD502 BGD702 BGD702N BGD712 BGD712C BGD704 BGD714 BGD885 BGD802 BGD812 BGD804 BGD814 BGD816L CGD942C CGD944C CGD1040HI CGD1042HI CGD1044HI CGD1046HI CGD1042H CGD1044H CGD982HCI CGD985HCI CGD987HCI
40 - 750
40 - 870
40 - 1003
3.6.4
Type
CATV optical receivers

Frequency range (MHz) 40 - 870 S (V/W) 800 800 800 800 Slope (dB) 0-2 0-2 0-2 0-2 FL (dB) 1 1 1 1 RLOUT (dB) 11 11 11 11 IMD3 (dB) -71 -71 -69 -73 IMD2 (dB) -55 -54 -53 -57 @ fmeasured (MHz) 854.5 854.5 854.5 854.5 @ Pi(opt) (mW) 1 1 1 1 NF @ fmax (dB) 8.5 8.5 8.5 8.5 Itot (mA) 205 205 205 205 Remark FC and SC available FC and SC available FC and SC available FC and SC available
BGO807 BGO807C BGO807CE BGO827
3.6.5
Type BGY68 BGY66B BGY67 BGY67A BGR269
CATV reverse hybrids

Frequency range (MHz) 5 - 75 5 - 120 5 - 200 Gain (dB) 29.2 - 30.8 24.5 - 25.5 21.5 - 22.5 23.5 - 24.5 34.5 - 35.5 Slope (dB) -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.6 FL (dB) 0.2 0.2 0.2 0.2 0.5 RLIN/RLOUT (dB) 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 CTB (dB) -68 -66 -67 -67 -57 X mod (dB) -60 -54 -60 -59 -50 CSO (dB) @ Ch 4 14 22 22 28 @ Vo (dBmV) 50 48 50 50 50 NF @ fmax (dB) 3.5 5 5.5 5.5 5.5 Itot (mA) 135 135 215 215 160
-66
Bold Red = New, highly recommended product Bold = Highly recommended product NOTES: This table is for reference only. For full data please refer to the latest datasheet. For availability please check the NXP Sales office.
Description ` Frequency range: minimum and maximum frequency in MHz at which data are characterized (@ Ch / @ Vo) ` FL is flatness of frequency response ` The number of channels and the output voltage at which CTB, Xmod, CSO, IMD2 and IMD3 are characterized, are @ fmax ` S is minimum responsivity of optical receivers
88
3.7
RF power transistors
NEW : RF power transistor selection guide on www.nxp.com/rfpower Easy-to-use parametric filters help you to choose the right RF power transistor for your design.
3.7.1
Base station transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/basestations/index.html#preview Device naming conventions RF power base stations transistors

-45 P R B N G gullwing-shaped leads specialty option: current sense lead enhanced ruggedness push-pull device P1dB power option: earless package option: low thermal resistivity operating frequency (in 100MHz; maximum) G: standard LDMOS LDMOS technology generation F: LDMOS transistor in ceramic package C: LDMOS transistor in air cavity plastic (ACP) package D: fully integrated Doherty amplifier M: MMIC P: Plastic L: high frequency power transistor B: semiconductor die made of Si B L F 6 G 22 L S
Why choose NXPs RF power transistors for base stations: L F 6 G 22 L S -45 P R B N G `B Leading technology (generation 6, 7 and 8 of LDMOS) gullwing-shaped leads ` Highest efficiency specialty option: current sense lead ` Best ruggedness enhanced ruggedness push-pull device ` Advanced Doherty power P1dB amplifier designs option: earless package ` Industrys first 3.8 thermal resistivity option: low GHz Doherty operating frequency (in 100MHz; maximum) ` Industry's first 3 way, 900 MHz Doherty G: standard LDMOS LDMOS technology generation ` Inudstry's first 50V, 600W, single package Doherty F: LDMOS transistor in ceramic package NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for base stations, covering all cellular technologies (MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS) and WiMAX infrastructures.
C: LDMOS transistor in air cavity plastic (ACP) package D: fully integrated Doherty amplifier M: MMIC module L: high frequency power transistor B: semiconductor die made of Si
3.7.1.1
Function
0.7 - 1.0 GHz line-up

Type fmin (MHz) 1 920 700 700 700 700 700 700 688 920 700 700 fmax (MHz) 2200 960 1000 1000 1000 1000 1000 1000 1000 960 1000 1000 CW P1dB (W) 10 30 40 45 140 160 160 200 200 250 260 300 VDS (V) 28 28 28 28 28 32 28 28 28 28 28 28 PL (W) 2 2 2.5 1 32 32 40 40 40 60 40 110
WCDMA performance BO (dB) 11.5 11.8 12 16.5 8 7 7 7 7 7 8.1 7 D (%) 31 11.5 15 8 32 27 29 28.5 28.5 30 26.5 47 Gp (dB) 19.3 29 23 23 19 22.5 22 20 20 19 22 16 Test signal 1-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA IS95 Package SOT538A SOT822-1 SOT1112A SOT608B SOT1204 SOT502 SOT502B SOT502A SOT502B SOT502B SOT539B SOT539B
Driver BLF6G21-10G MMIC driver BLM6G10-30(G) BLF6G10L-40BRN Driver/final BLF6G10(S)-45 BLP7G10S-140P(G) BLF6G10(LS)-160RN BLF8G10LS-160 BLF6G10-200RN Final BLF6G10LS-200RN BLF7G10LS-250 BLF6G10L(S)-260PRN BLF8G10LS-300P
3.7.1.2
Function Driver Final

Type BLF6G21-10G BLF6G15L-40BRN BLF7G15LS-200 BLF6G15L-250PBRN BLF7G15LS-300P fmin (MHz) 1 1450 1450 1450 1450 fmax (MHz) 2200 1550 1550 1550 1550 CW P1dB (W) 10 40 200 250 300 VDS (V) 28 28 28 28 28 PL (W) 0.7 2.5 50 60 85
WCDMA performance BO (dB) 11.5 12.0 6.0 6.2 5.5 D (%) 15 13 29 33 31 Gp (dB) 18.5 22 19.5 18.5 18 Test signal 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA Package SOT538A SOT1112A SOT502B SOT1110A SOT539B 89
3.7.1.3
Function

Type BLF6G21-10G BLF6G20-40 BLF6G20-45 BLF6G20S-45 BLD6G21L-50 BLD6G21LS-50 BLF6G20-75 BLF6G20LS-75 BLF7G20L-90P BLF7G20LS-90P BLF6G20-110 BLF6G20LS-110 BLF6G20LS-140 BLF7G20LS-140P BLF7G21L(S)-160P BLF6G20-180PN BLF6G20-180RN BLF6G20LS-180RN BLF7G20L-200 BLF7G20LS-200 BLF6G20-230PRN BLF6G20S-230PRN BLF7G20L-250P BLF7G20LS-250P fmin (MHz) 1 1800 1800 1800 2010 2010 1800 1800 1800 1800 1800 1800 1800 1800 1800 1800 1800 1800 1805 1805 1805 1805 1805 1805 fmax (MHz) 2200 2000 2000 2000 2025 2025 2000 2000 2000 2000 2000 2000 2000 2000 2050 2000 2000 2000 1990 1990 1880 1880 1880 1880 CW P1dB (W) 10 40 45 45 50 50 75 75 90 90 110 110 140 140 160 180 180 180 200 200 230 230 250 250 VDS (V) 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 32 30 30 28 28 30 30 28 28 PL (W) 0.7 2.5 2.5 2.5 8 8 29.5 29.5 84 84 25 25 35.5 60 45 50 40 40 55 55 50 50 70 70
Test signal performance BO (dB) 11.5 12.0 12.6 12.6 8.0 8.0 4.1 4.1 0.3 0.3 6.4 6.4 6.0 3.7 5.5 5.6 6.5 6.5 5.6 5.6 6.6 6.6 5.5 5.5 D (%) 15 15 14 14 43 43 37.5 37.5 54 54 32 32 30 41 34 29.5 27 27 33 33 29.5 29.5 35 35 Gp (dB) 18.5 18.8 19.2 19.2 14.5 14.5 19 19 19 19 19 19 16.5 17.5 18 18 17.2 17.2 18 18 16.5 16.5 18 18 Test signal 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA TD-SCDMA TD-SCDMA GSM EDGE GSM EDGE GSM EDGE GSM EDGE 2-c WCDMA 2-c WCDMA 2-c WCDMA GSM EDGE 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA Package SOT538A SOT608A SOT608A SOT608B SOT1130A SOT1130B SOT502A SOT502B SOT1121A SOT1121B SOT502A SOT502B SOT502B SOT1121B SOT1121 SOT539A SOT502A SOT502B SOT502A SOT502B SOT539A SOT539B SOT539A SOT539B
Driver
Final
3.7.1.4
Function

Type BLF6G21-10G BLP7G22-10 BLM6G22-30 BLM7G22S-60PG BLF6G22L-40BN BLF6G22L(S)-40P BLF6G22(S)-45 BLD6G22L(S)-50 BLF6G22LS-75 BLF7G22LS-100P BLF6G22LS-100 BLF7G22L(S)-130 BLF7G22L(S)-160 BLF6G22(LS)-180PN BLF6G22(LS)-180RN BLF7G22L(S)-200 BLF7G22L(S)-250P fmin (MHz) 10 10 2100 2000 2000 2110 2000 2110 2000 2000 2000 2000 2000 2000 2000 2110 2110 fmax (MHz) 2200 2200 2200 2200 2200 2170 2200 2170 2200 2200 2200 2200 2200 2200 2200 2170 2170 CW P1dB (W) 10 10 30 60 40 40 45 50 75 100 100 130 160 180 180 200 250 VDS (V) 28 28 28 28 28 28 28 28 28 28 28 28 28 32 30 28 28 PL (W) 0.7 0.7 2 3 2.5 13.5 2.5 8 17 20 25 30 43 50 40 55 70
Test signal performance BO (dB) 11.5 11.5 11.8 11.5 12.0 4.7 12.6 8.0 6.4 7.0 6.0 6.4 5.7 5.6 6.5 5.6 5.5 D (%) 15 15 9 10 16 30 13 40 30.5 28 29 32 30 27.5 25 31 30 Gp (dB) 18.5 17 29.5 29 19 19 18.5 14 18.7 18 18.5 18.5 18 17.5 16 18.5 17 Test signal 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA TD-SCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA Package SOT538A SOT1179 SOT834-1 tbd SOT1112A SOT1121B3 SOT608B SOT1130B SOT502B SOT1121B3 SOT502B SOT502B SOT502B3 SOT539B SOT502B SOT502B SOT539B
Driver
Final
3.7.1.5
Function Driver
2.3- 2.7 GHz line-up

Type BLF7G27L(S)-75P BLF6G27LS-40P BLF7G27L(S)-90P BLF7G24L(S)-100 BLF7G27L(S)-100 BLF7G24L(S)-140 BLF7G27L(S)-140 BLF7G27L(S)-150P BLF7G24LS-160P BLF7G27LS-200P fmin (MHz) 2300 2500 2500 2300 2500 2300 2500 2500 2300 2600 fmax (MHz) 2700 2700 2700 2400 2700 2400 2700 2700 2400 2700 CW P1dB (W) 75 40 90 100 100 140 140 150 160 200 VDS (V) 28 28 28 28 28 28 28 28 28 28 PL (W) 12 20 16 14 25 30 20 30 30 42
Test signal performance BO (dB) 8.0 3.0 7.5 8.5 6.0 6.7 8.5 7.0 7.3 7.0 D (%) 26 37 27.5 24 24 22 22 27 27 25 Gp (dB) 17 17.5 17.5 18 17.5 17 17 16.5 16.5 16.5 Test signal IS-95 1-C WCDMA IS-95 IS-95 IS-95 IS-95 IS-95 IS-95 IS-95 IS-95 Package SOT1121 SOT1121 SOT1121 SOT502 SOT502 SOT502 SOT502 SOT539 SOT1246 SOT1246
Final
3.7.1.6
Function Driver Final

Type BLF6G38-10(G) BLF6G38(LS)-25 BLF6G38(LS)-50 BLF6G38(LS)-100 fmin (MHz) 3400 3400 3400 3400 fmax (MHz) 3600 3800 3800 3600 CW P1dB (W) 10 25 50 100 VDS (V) 28 28 28 28 PL (W) 2 4.5 9 18.5
Test signal performance BO (dB) 7.0 7.4 7.4 7.3 D (%) 20 24 23 21.5 Gp (dB) 14 15 14 13 Test signal N-CDMA N-CDMA N-CDMA N-CDMA Package SOT975 SOT608 SOT502 SOT502
90
3.7.1.7
Power LDMOS Doherty designs

PPEAK (dBm) POUT-AVG (dBm) 47 49.5 50 44 44.5 47.1 48 49.3 49.7 50 50.9 48.6 49.6 50.6 44.5 47 47.5 47 48.1 49.5 50 50 51 45 47.4 47.2 47.5 48 48 49 50 50 50.5 44.5 39 42 42 44.5 39 40.5 46.5 47 47 47 46.4 47.9 48 48.5 49 49.2 50 50 42 47.5 42 42 42.3 44 44 44 44.5 47.2 47.3 43 VDS (V) 28 32 32 28 28 28 28 30 28 32 32 28 28 32 28 32 31 28 30 30 32 28 28 28 28 28 28 31 28 30 32 28 30 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 32 28 32 32 28 28 28 28 28 28 28 28 28 30 28 28 Gain (dB) 19 20 20.5 20 15 20.5 18.5 16 20.5 20.5 22 18.4 16 16.5 16 16 16.3 16 15.2 16 15.5 16 16 16.5 16.7 16 14.5 15.3 14.8 17.2 15.5 16 15.7 15.2 14.4 17 17.2 16 13 17.2 16.5 17 17 15.5 15 17.3 15 16.2 14.5 16 15 17.5 14.6 15.2 15 15 14.5 14 14 14 14 15 15 11.5 Drain Eff. (%) 42 42 47 48 50 44 40 50 40 46 47 42 42 42 44 38 49 41 48 42 37 42 47.6 40 48.2 40 46 38 45 41 37 40 43 41.5 41 46 47.2 44 38 46 43 43 43 38 43 42 48 41 41 47 40 40 44 44 43 37.5 39 40 40 40 38 41 41 32 Type SYM SYM SYM SYM 3-WAY SYM SYM ASYM SYM / MPPM SYM SYM / MMPP SYM ASYM SYM SYM SYM ASYM SYM ASYM SYM SYM / MMPP SYM 3-WAY SYM SYM SYM ASYM SYM ASYM SYM SYM SYM 3-WAY SYM SYM SYM SYM SYM SYM SYM SYM SYM SYM SYM ASYM SYM 3-WAY SYM ASYM 3-WAY SYM SYM SYM ASYM SYM SYM SYM ASYM ASYM ASYM SYM ASYM ASYM SYM Main transistor 1/2 BLF6G10L(S)-260PRN BLF6G10LS-200RN BLF6G10LS-200RN BLF6G10S-45 BLF6G10S-45 1/2 BLF6G10L(S)-260PRN BLF6G10-135RN BLF8G10LS-160 BLF6G10L(S)-260PRN BLF6G10-200RN BLF6G10L(S)-260PRN BLF7G15LS-200 BLF7G15LS-200 BLF6G15LS-250PBRN 1/2 BLF7G21LS-160P 1/2 BLF6G20-230PRN BLF7G20LS-90P 1/2 BLF7G20L(S)-250P BLF7G20LS-90P BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P BLF7G20LS-200 BLF6G20-75 BLF6G20LS-110 1/2 BLF7G20LS-250P BLF7G20LS-90P BLF6G20LS-140 BLF7G20LS-140P BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P BLF7G20LS-200 1/2 BLF7G21LS-160P BLD6G21L(S)-50 1/2 BLF7G20L(S)-90P 1/2 BLF7G20L(S)-90P 1/2 BLF7G21LS-160P BLD6G22L(S)-50 1/2 BLF6G22L-40P BLF6G22LS-100 BLF7G22L(S)-130 1/2 BLF7G22LS-250P BLF6G22L(S)-130 BLF7G22L(S)-130 BLF7G22LS-160 BLF7G22L(S)-130 BLF7G22L(S)-200 BLF6G22-100 BLF7G22LS-160 BLF6G22-180PN BLF7G22LS-250P 1/2 BLF7G27L(S)-75P BLF7G24LS-100 1/2 BLF7G27L(S)-75P BLF6G27-45 1/2 BLF7G27LS-90P BLF6G27-45 BLF6G27-45 BLF6G27-45 1/2 BLF7G27LS-150P BLF7G27LS-100 BLF7G27LS-100 BLF6G38-50 Peak transistor 1/2 BLF6G10L(S)-260PRN BLF6G10LS-200RN BLF6G10LS-200RN BLF6G10S-45 2x BLF6G10S-45 1/2 BLF6G10L(S)-260PRN BLF6G10-135RN BLF7G10LS-250 BLF6G10L(S)-260PRN BLF6G10-200RN BLF6G10L(S)-260PRN BLF7G15LS-200 BLF7G15LS-300P BLF6G15LS-250PBRN 1/2 BLF7G21LS-160P 1/2 BLF6G20-230PRN BLF7G21LS-160P 1/2 BLF7G20L(S)-250P BLF7G20LS-200 BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P 2x BLF7G20LS-200 BLF6G20-75 BLF6G20LS-110 1/2 BLF7G20LS-250P BLF7G20LS-200 BLF6G20LS-140 BLF7G20LS-200 BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P 2x BLF7G20LS-200 1/2 BLF7G21LS-160P BLD6G21L(S)-50 1/2 BLF7G20L(S)-90P 1/2 BLF7G20L(S)-90P 1/2 BLF7G21LS-160P BLD6G22L(S)-50 1/2 BLF6G22L-40P BLF6G22LS-100 BLF7G22L(S)-130 1/2 BLF7G22LS-250P BLF6G22L(S)-130 BLF7G22L(S)-200 BLF7G22LS-160 2x BLF7G22L(S)-130 BLF7G22L(S)-200 BLF6G22-180PN 2x BLF7G22L(S)-160 BLF6G22-180PN BLF7G22LS-250P 1/2 BLF7G27L(S)-75P BLF7G24LS-140 1/2 BLF7G27L(S)-75P BLF6G27-45 1/2 BLF7G27LS-90P 2x BLF6G27-45 2x BLF6G27-45 BLF6G27(LS)-100 1/2 BLF7G27LS-150P BLF7G27LS-140 BLF7G27LS-140 BLF6G38-50
Freq band (MHz)
728-821 MHz 790-821 55.5 790-821 57.2 728-768 58 869-960 MHz 869-894 52 869-894 52.7 920-960 55.1 920-960 56.2 920-960 57.3 925-960 57.7 869-894 58 925-960 58.9 1476-1511 MHz 1526-1555 56.6 1476-1511 58.1 1476-1511 58.6 1805-1880 MHz (DCS) 1805-1880 52.5 1805-1880 55 1805-1880 55.4 1805-1880 55.5 1805-1880 56.1 1805-1880 57.5 1805-1880 57.9 1805-1880 58.2 1805-1880 58.6 1930-1990 MHz (PCS) 1930-1990 53 1930-1990 54.3 1930-1990 55.2 1930-1990 55.5 1930-1990 56 1930-1990 56 1930-1990 57 1930-1990 58 1930-1990 58.2 1930-1990 58.5 1880-2025 MHz (TD-SCDMA) 1805-2050 52 2010-2025 47 1880-2025 50 2010-2025 50 1880-1920 52.5 2110-2170 MHz (UMTS / LTE) 2110-2170 47 2110-2170 48.5 2110-2170 54.7 2110-2170 54.9 2110-2170 55 2110-2170 55 2110-2170 55.5 2110-2170 55.9 2110-2170 56 2110-2170 56.5 2110-2170 57 2110-2170 57.2 2110-2170 58 2110-2170 58 2300-2400 MHz (WiBRO / LTE) 2300-2400 49.5 2300-2400 55 2500-2700 MHz (WiMAX / LTE) 2570-2620 49.5 2500-2700 50 2500-2700 50.3 2500-2600 52 2600-2700 52 2600-2700 52 2500-2700 52.5 2620-2690 55.2 2545-2575 55.3 3300-3800 MHz (WiMAX) 3400-3600 51
91
3.7.2
Broadcast / ISM (industrial, scientific, medical) RF power transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/broadcast_ism/index.html#preview Why choose NXPs RF power transistors for broadcast / ISM applications: ` Highest power ` Best-in-class design support ` Best ruggedness ` Very low thermal resistance design for unrivalled reliability ` Best broadband performance NXP's leading LDMOS technologies, together with advanced package concepts, enable power amplifiers that deliver best-in-class performance. We offer the industrys highest power and best ruggedness for all broadcast technologies. Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF) and High Frequency (HF) applications and covers ISM frequency bands.
3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS line-up

Function Type BLP10H605 BLP10H610 BLP15M705 BLP15M710 BLF178P BLF571 BLF642 BLF871(S) BLF645 BLF881(S) BLF573(S) BLF573P BLF647P BLF574 BLF278XR BLF888A(S) BLF578 BLF578XR fmin (MHz) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 470 10 10 10 10 fmax (MHz) 1000 1000 1500 1500 110 500 1400 1000 1400 1000 500 500 1500 500 500 860 500 500 500 500 P1dB (W) 5 10 5 10 1000 20 35 100 100 140 300 500 150 600 500 600 1000 1200 1000 1200 D (%) 65 65 57 57 75 70 63 60 56 49 70 70 55 73 73 58 75 71 75 71 Gp (dB) 20 20 18 18 26 27,5 19 21 18 21 27,2 26 18 27 27 20 26 24 26 24 VDS (V) 50 50 32 32 50 50 32 40 32 50 50 50 32 50 50 50 50 50 50 50 Test signal CW CW CW CW CW CW CW CW CW 2-tone class AB CW CW CW CW CW pulsed class AB CW pulsed class AB CW pulsed class AB Package SOT1179 SOT1179 SOT1179 SOT1179 SOT539 SOT467C SOT467C SOT467 SOT540A SOT467 SOT502B SOT1121 SOT1121 SOT539A SOT1240 SOT539 SOT539A SOT539A
Driver final Driver Driver/final Driver
Final
3.7.2.2 UHF 470-860 MHz LDMOS line-up

Function Type BLF642 Driver BLF871(S) BLF881(S) BLF884P BLF878 BLF879P Final BLF888 BLF888A(S) fmin (MHz) 470 470 470 470 470 470 470 470 470 470 470 470 470 470 470 fmax (MHz) 860 860 860 860 860 860 860 860 860 860 860 860 860 860 860 P1dB (W) 17,5 35 100 24 120 30 75 300 75 95 250 110 250 120 600 D (%) 19 19 47 33 49 31 33 32 32 32 46 31 46 31 58 Gp (dB) 48 63 21 22 21 21 21 21 21 20 19 19 19 19 20 VDS (V) 32 32 42 42 50 50 50 42 42 42 50 50 50 50 50 Test signal 2-tone class AB CW 2-TONE DVB-T 2-tone class AB DVB-T DVB-T CW DVB-T DVB-T 2-TONE DVB-T 2-TONE DVB-T pulsed class AB Package SOT467C SOT467C SOT467C SOT539A SOT979A SOT1121 SOT979A SOT539
3.7.2.3 2.45 GHz ISM LDMOS transistor line-up

Function Driver MMIC Type BLP25M74 BLP25M710 BLM2425M720 BLP2425M8140 BLF2425M7L(S)140 BLF2425M6L(S)180P BLF2425M7L(S)200 BLF2425M7L(S)250P fmin (MHz) 10 10 2400 2400 2400 2400 2400 2400 fmax (MHz) 2500 2500 2500 2500 2500 2500 2500 2500 P1dB (W) 4 10 20 140 140 180 200 250 D (%) 53 52 40 55 55 55 52 50 Gp (dB) 19 19 26,5 18 19 19 18,5 18 Test signal CW CW CW CW CW CW CW CW Package SOT1179 SOT1179 SOT1138 SOT1179 SOT502 SOT539 SOT502 SOT539
Final
92
3.7.3
Microwave LDMOS RF power transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/microwave_ldmos/index.html#preview Device naming conventions RF power microwave transistors

B L S 6 G 2731 S -120 G option: gullwing shaped leads P1dB power S: earless package P: pallet frequency band (in 100MHz; here: 2700-3100) G: standard LDMOS ( 28V) H: high voltage LDMOS (50V) LDMOS technology generation A: avionics frequency band operation L: L-band frequency operation S: S-band frequency operation L: high frequency power transistor B: semiconductor die made of Si
3.7.3.1 Avionics LDMOS transistors

Function Driver Final Type BLL6H0514-25 BLA6G1011-200R(G) BLA6H0912-500 BLA6H1011-600 BLA6H0912-1000 fmin (MHz) 500 1030 960 1030 960 fmax (MHz) 1400 1090 1215 1090 1215 P1dB (W) 25 200 500 600 1000 D (%) 50 65 50 52 50 Gp (dB) 19 20 17 19 17 VDS (V) 50 28 50 48 50 Test signal pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF Package SOT467C SOT502A SOT634A SOT539A SOT539A
3.7.3.2 L-band LDMOS transistors

Function Driver Final Type BLL6H0514-25 BLL6H0514L(S)-130 BLL6H1214L(S)-250 BLL6H1214-500 BLA6H0912-1000 fmin (MHz) 500 500 1200 1200 960 fmax (MHz) 1400 1400 1400 1400 1215 P1dB (W) 25 130 250 500 1000 D (%) 58 50 55 50 50 Gp (dB) 21 17 17 17 17 VDS (V) 50 50 50 50 50 Test signal pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF Package SOT467C SOT1135B SOT502B SOT539A SOT539A
3.7.3.3 S-band LDMOS transistors

Function Driver Type BLS6G2731-6G BLS6G3135(S)-20 BLS6G2735L(S)-30 BLS6G2731(S)-120 BLS6G3135(S)-120 BLS6G2731S-130 BLS6G2933S-130 BLS7G2933S-150 BLS6G2731P-200 BLS6G2933P-200 BLS7G2729L(S)-350P BLS7G3135L(S)-350P fmin (MHz) 2700 3100 2700 2700 3100 2700 2900 2900 2700 2900 2700 3100 fmax (MHz) 3100 3500 3500 3100 3500 3100 3300 3300 3100 3300 2900 3500 P1dB (W) 6 20 30 120 120 130 130 150 200 220 350 350 D (%) 33 45 50 48 43 47 47 47 45 45 50 45 Gp (dB) 15 15.5 14 13.5 11 12.5 12.5 13.5 11 11 13.5 12 VDS (V) 32 32 32 32 32 32 32 32 32 32 32 32 Test signal pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF Package SOT975C SOT608 SOT1135 SOT502B SOT502 SOT922-1 SOT922-1 SOT922-1 pallet pallet SOT539 SOT539
Final
93
Why choose NXPs microwave RF power transistors ` High gain ` High efficiency ` Highest reliability ` Improved pulse droop and insertion phase ` Improved ruggedness - overdrive without risk to +5 dB ` Reduces component count and helps simplify L- and S-band radar design ` Uses non-toxic, RoHS-compliant packages
3.8
High-speed data converters
As a leader in high performance mixed-signal IC products, NXP offers an extensive selection of high-speed data converters, with digital interfaces including JESD204A (in CGV TM product line), as well as CMOS LVCMOS and LVDS DDR interfaces. NXP's high-speed DACs and ADCs deliver best-in-class converter core performance and ultra-stable dynamic performance across a broad temperature range. NXP is the only semiconductor vendor to offer high-speed data convertors, small signal RF building blocks, and RF power amplifiers, to enable system-level integration across the full radio transceiver chain.
More information on NXPs high-speed converters: ` Fast track your design with NXPs high-speed converters http://www.nxp.com/campaigns/fasttrackyourdesign/ ` All literature: http://www.nxp.com/dynamic/literature/tid-50935_tree-product/data.html
3.8.1 High-speed ADCs

Family ADC1613D series ADC1613S series ADC1610S series ADC1415S series ADC1413D series ADC1413S series ADC1412D series ADC1410S series ADC1215S series ADC1213D series ADC1213S series ADC1212D series ADC1210S series ADC1207S080 ADC1206S series ADC1115S125 ADC1113D125 ADC1113S125 ADC1112D125 ADC1015S series ADC1010S series ADC1006S series ADC1005S060 ADC1004S series ADC1003S series ADC1002S020 ADC0808S series ADC0804S series ADC0801S040 Description Dual 16-bit ADC up to 65/80/105/125 Msps Single 16-bit ADC up to 65/80/105/125 Msps Single 16-bit ADC up to 65/80/105/125 Msps Single 14-bit ADC up to 65/80/105/125 Msps Dual 14-bit ADC up to 65/80/105/125 Msps Single 14-bit ADC up to 65/80/105/125 Msps Dual 14-bit ADC up to 65/80/105/125 Msps Single 14-bit ADC up to 65/80/105/125 Msps Single 12-bit ADC up to 65/80/105/125 Msps Dual 12-bit ADC up to 65/80/105/125 Msps Single 12-bit ADC up to 65/80/105/125 Msps Dual 12-bit ADC up to 65/80/105/125 Msps Single 12-bit ADC up to 65/80/105/125 Msps Single 12-bit ADC 80 Msps Single 12-bit ADC up to 40/55/70 Msps Single 11-bit ADC up to 125 Msps Dual 11-bit ADC up to 125 Msps Single 11-bit ADC up to 125 Msps Dual 11-bit ADC up to 125 Msps Single 10-bit ADC up to 65/80/105/125 Msps Single 10-bit ADC up to 65/80/105/125 Msps Single 10-bit ADC up to 55/70 Msps Single 10-bit ADC 60 Msps Single 10-bit ADC 30/40/50 Msps Single 10-bit ADC 30/40/50 Msps Single 10-bit ADC 20 Msps Single 8-bit ADC up to 125/250 Msps Single 8-bit ADC up to 30/40/50 Msps Single 8-bit ADC 40 Msps
Digital interface Input TTL/ LVDS/ Supply Power dissipation SFDR SNR LVCMOS CGV Package buffer CMOS DDR voltage (V) per channel (mW) (dBc) (dBFS) 1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 1.8 /3.0/5.0 1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 1.8 /3.0/5.0 1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 5.0 3.3 / 5.0 1.8 / 3.0/5.0 1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 1.8 /3.0/5.0 1.8 / 3.0 3.3 / 5.0 5.0 5.0 5.0 3 to 5.25 1.8 / 3.3 5.0 2.7 to 5.5 635 690 630 840 635 690 610 630 840 635 690 610 630 840 550 840 635 690 610 840 630 550 312 175 235 53 215 175 30 89 87 89 87 87 87 87 87 87 87 87 87 87 90 70 87 87 86 87 87 87 71 72 72 70 72 56 72 59 71.6 71.4 71.6 71.4 71.4 71.4 71.4 71.4 69.6 69.6 71.4 69.6 69.6 71 64 66.2 66.2 71,4 66.2 61.6 61.6 59 58 58 58 60 48 49 47 HVQFN56 8x8 HVQFN32 7x7 HVQFN40 6x6 HVQFN40 6x6 HVQFN56 8x8 HVQFN32 7x7 HVQFN64 9x9 HVQFN40 6x6 HVQFN40 6x6 HVQFN56 8x8 HVQFN32 7x7 HVQFN64 9x9 HVQFN40 6x6 HTQFP48 7x7 QFP44 HVQFN40 6x6 HVQFN56 8x8 HVQFN32 7x7 HVQFN56 8x8 HVQFN40 6x6 HVQFN40 6x6 QFP44 SSOP28 SSOP28 SSOP28 LQFP32 HTQFP48 7x7 SSOP28 SSOP20
3.8.2 High-speed DACs

Family Description
Digital interface LVCMOS CGV Supply Power dissipation SFDR voltage (V) per channel (mW) (dBc) 1.8 / 3.3 1.8 / 3.3 3.3 3.3 1.8 / 3.3 1.8 / 3.3 3.3 3.3 1.8 / 3.3 1.8 / 3.3 3.3 3.3 700 435 210 95 700 435 210 95 700 435 210 95 76 77 80 88 76 80 77 65 76 77 80 65 Interpolation 2x, 4x, 8x 2x, 4x, 8x 2x 2x, 4x, 8x 2x, 4x, 8x 2x 2x, 4x, 8x 2x, 4x, 8x 2x Package HVQFN64 9x9 HTQFP100 14x14 HTQFP80 12x12 LQFP48 HVQFN64 9x9 HTQFP100 14x14 HTQFP80 12x12 LQFP48 HVQFN64 9x9 HTQFP100 14x14 HTQFP80 12x12 LQFP48
DAC1408D series Dual 14-bit DAC up to 650/750 Msps DAC1405D series Dual 14-bit DAC up to 650/750 Msps DAC1403D160 Dual 14-bit DAC 160 Msps DAC1401D125 Dual 14-bit DAC 125 Msps DAC1208D series Dual 12-bit DAC up to 650/750 Msps DAC1205D series Dual 12-bit DAC up to 650/750 Msps DAC1203D160 Dual 12-bit DAC 160 Msps DAC1201D125 Dual 12-bit DAC 125 Msps DAC1008D series Dual 10-bit DAC up to 650/750 Msps DAC1005D series Dual 10-bit DAC up to 650/750 Msps DAC1003D160 Dual 10-bit DAC 160 Msps DAC1001D125 Dual 10-bit DAC 125 Msps Bold Red = New, highly recommended product 94 NXP Semiconductors RF Manual 15th edition
4. Design support
This chapter will guide you trough the available tools, documents, materials and links to ease the design-in of our products.
Streamline your RF design with leading RF EDA software Electronic design automation (EDA) software lets RF engineers predict the behavior of a design by performing simulations. That helps them reduce the number of design cycles, lower design risk, and make better RF component choices. NXP's RF small signal portfolio is supported by a number of EDA toolkits, including Ansoft Designer RF, AWR Microwave Office, and Agilent Advanced Design System (ADS). Installation manual area available on the NXP web site at www.nxp.com/models.
4.1
S-parameters
4.2
4.2.1
Simulation models
Spice models
S-parameters help you to simulate the behavior of NXP devices using your own adjustments for voltage, current, and more. Wideband transistors, FETs & MMICs For all types in the below tables there are S-parameters available. In the interactive PDF of the RF manual all these type numbers are hyperlinks that take you directly to the corresponding product information page on the NXP website. Scroll down to find the S-parameters on each product information page.
BF67 BFG135 BFG198 BFG21W BFG25A/X BFG31 BFG35 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505 BFG520 BFG520W BFG540 Wideband transistors BFG540W BFG541 BFG590 BFG591 BFG93A BFG94 BFG97 BFM505 BFM520 BFQ149 BFQ18A BFQ19 BFQ67 BFQ67W BFR106 BFR505 BFR520 BFR540 BFR92A BFR92AW BFR93A FETs BF1212 BF1212R BF1212WR MMICs BGM1012 BGM1013 BGM1014 BGM2011 BGA2715 BGA2716 BGA2717 BGA2011 BGA2012 BGA6289 BFR93AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25 BFT25A BFT92 BFT92W BFT93 BFT93W BFU725F/N1 BRF505T PBR941 PBR951 PRF947 PRF949 PRF957
Spice models help you to optimize performance and make it easier to know which external components impact performance. Wideband transistors, FETs & Varicaps diodes For all types in the below tables there are Spice models available. In the interactive PDF of the RF manual all these type numbers are hyperlinks that take you directly to the corresponding product information page on the NXP website. Scroll down to find the Spice models on each product information page.
BFG10 BFG10/X BFG10W/X BFG135 BFG198 BFG21W BFG25A/X BFG25AW/X BFG31 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG35 BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505 BFG505/X Wideband transistors BFG505W/X BFM505 BFG520 BFM520 BFG520/X BFQ149 BFG520/XR BFQ18A BFG520W BFQ19 BFG520W/X BFQ540 BFG540 BFQ67 BFG540/X BFQ67W BFG540/XR BFR106 BFG540W BFR505 BFG540W/X BFR505T BFG540W/XR BFR520 BFG541 BFR540 BFG590 BFR92A BFG590/X BFR92AW BFG591 BFR93A BFG67 BFR93AW BFG67/X BFS17 BFG92A/X BFS17A BFG93A BFS17W BFG94 BFS25A BFG97 BFS505 FETs BF909 BFS520 BFS540 BFT25A BFT92 BFT92W BFT93 BFT93W BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F BFU730F BFU760F BFU790F PBR941 PBR951 PRF947 PRF949 PRF957
BF1211 BF1211R BF1211WR
BF511 BF513 BF862
BF862 BF904
BF908
BF998
BGA2001 BGA2003 BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 BGU7003 BGA2712 BGM1011
BGA6489 BGA6589 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866
BB145B BB149 BB149A
BB156 BB179 BB179B
Varicap diodes BB201 BB202 BB207
BB208-02
4.2.2
Interactive datasheet
Quickly and easily generate custom datasheets for our wideband RF transistors based on your specific operating conditions (http://www.nxp.com/models).
Design support
4.2.3
Simulation models for RF power devices
4.3
Application notes
For easy design-in, NXP provides fully physics-based, electrothermal models for the RF power transistors. These models are available for Advanced Design System (ADS) from Agilent and for Microwave Office (MWO) from Applied Wave Research (AWR). Newly developed models per product are based on the best-inclass RFLDMOS model, developed by NXP Research, a recognized leader in physics-based models. This concept yields highly reliable simulation results over a wide range of electrical conditions. The standard models fully support DC, AC, s-parameter (small signal), harmonic balance (large signal) and time-domain simulations. NXP RF power models allow designers to assess the performance of complex PA systems at an early stage of the development process. The available models come with all necessary libraries and documentation, and can be downloaded from NXPs website.
Product type BLA6G1011-200R BLA6H0912-500 BLA6H1011-600 BLF369 BLF3G21-6 BLF571 BLF573 BLF573S BLF574 BLF578 BLF645 BLF6G10-135RN BLF6G10-200RN BLF6G10-45 BLF6G10L-260PRN BLF6G10L-40BRN BLF6G10LS-135RN BLF6G10LS-200RN BLF6G10LS-260PRN BLF6G10S-45 BLF6G15L-250PBRN BLF6G15L-40BRN BLF6G20-180RN BLF6G20-230PRN BLF6G20-45 BLF6G20LS-180RN BLF6G20S-230PRN BLF6G20S-45 BLF6G21-10G BLF6G22-180RN BLF6G22-45 BLF6G22LS-180RN BLF6G22S-45 BLF6G27-10 BLF6G27-10G BLF6G27-135 BLF6G27-45 BLF6G27-75 BLF6G27L-40P BLF6G27LS-135 BLF6G27LS-40P BLF6G27LS-75 BLF6G27S-45 BLF6G38-10 BLF6G38-100 BLF6G38-10G BLF6G38-25 BLF6G38-50 BLF6G38LS-100 BLF6G38LS-50 BLF6G38S-25 BLF7G15L-300P BLF7G15LS-200 BLF7G20L-200 96 ADS MWO Product type model model Y Y BLF7G20L-250P Y Y BLF7G20L-90P Y Y BLF7G20LS-140P Y N BLF7G20LS-200 Y N BLF7G20LS-250P Y Y BLF7G20LS-90P Y Y BLF7G21L-160P Y Y BLF7G21LS-160P Y Y BLF7G22L-130 Y Y BLF7G22L-130N Y Y BLF7G22L-160 Y Y BLF7G22L-200 Y N BLF7G22L-250P Y Y BLF7G22LS-130 Y N BLF7G22LS-160 Y N BLF7G22LS-200 Y Y BLF7G22LS-250P Y N BLF7G24L-100 Y N BLF7G24L-140 Y Y BLF7G24LS-100 Y N BLF7G24LS-140 Y N BLF7G27L-100 Y N BLF7G27L-140 Y N BLF7G27L-150P Y Y BLF7G27L-200PB Y N BLF7G27L-75P Y N BLF7G27L-90P Y Y BLF7G27LS-100 Y Y BLF7G27LS-140 Y N BLF7G27LS-150P Y Y BLF7G27LS-200PB Y N BLF7G27LS-75P Y Y BLF7G27LS-90P Y N BLF871 Y Y BLF871S Y N BLF878 Y Y BLF881 Y N BLF881S Y N BLF888 Y N BLF888A Y N BLF888AS Y N BLL6H0514-25 Y Y BLL6H0514L-130 Y N BLL6H0514LS-130 Y N BLL6H1214-500 Y Y BLL6H1214L-250 Y Y BLL6H1214LS-250 Y Y BLM6G22-30 Y N BLS6G2731-6G Y Y BLS6G2731S-130 Y Y BLS6G3135-120 Y N BLS6G3135-20 Y N BLS6G3135S-120 Y N BLS6G3135S-20 ADS MWO model model Y N Y N Y N Y N Y N Y N Y N Y N Y Y Y Y Y N Y N Y N Y Y Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y Y Y Y Y Y Y Y Y Y Y N Y Y Y Y Y Y Y Y Y Y Y N Y Y Y Y Y N Y N Y Y Y Y Y N Y Y Y N
Multiple RF applications are featured in the RF Manuals first chapter including application diagrams, recommended types and product highlights. More in-depth application information is available in the second chapter. And on the NXP website we have additional application notes available in the RF section (http://www.nxp.com/products/all_appnotes/).
4.4
Demo boards
BGA2001 demo board
4.4.1
RF transistor, MMIC & IC demo boards
RF transistor, MMIC & IC demo boards are available (although limited) via your local NXP representative or authorized distributor (look at the last chapter: Web Links and Contacts).
RF small signal demo boards BGA2800 BGM1014 BGA2801 BGU7003 BGA2815 BGU7005 BGA2816 BGU7007 BGA2850 BGU7030F BGA2865 BGU7031 BGA2866 BGU7032 BGA6289 BGU7033 BGA6489 BGU7041 BGA6589 BGU7042 BGA6589 TFF1003HN BGA7024 TFF11070HN BGA7124 TFF11073HN BGM1011 TFF11077HN BGM1012 TFF11080HN BGM1013 TFF11084HN
BFU690F BFU725F/N1 BGA2001 BGA2003 BGA2011 BGA2012 BGA2031 BGA2709 BGA2711 BGA2712 BGA2714 BGA2715 BGA2716 BGA2748 BGA2771 BGA2776
TFF11088HN TFF11092HN TFF11096HN TFF11101HN TFF11105HN TFF11110HN TFF11115HN TFF11121HN TFF11126HN TFF11132HN TFF11139HN TFF11145HN TFF11152HN
BGU7005 demo board
BGA7124 demo board
4.4.2
RF power transistor demo boards
Type
ADC1213S series ADC1215S series
Description
Demo boards; VIRTEX 5 FPGA on board Demo boards with both CMOS and LVDS Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards with both CMOS and LVDS Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; VIRTEX 5 FPGA on board Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo board; Lattice ECP3 FPGA on board Demo boards; VIRTEX 5 FPGA on board Demo boards; both CMOS and LVDS outputs Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; VIRTEX 5 FPGA on board Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo boards; VIRTEX 5 FPGA on board
Demo boards are available (although limited) via your local NXP representative (see the last chapter: Web Links and Contacts).
ADC1410S series
ADC1412D series
ADC1413D series ADC1413S series ADC1415S series
ADC1610S series
ADC1613D series ADC1613S series
4.4.3
High-speed converter demo boards
DAC demo boards Type

DAC1001D125 DAC1003D160 DAC1005D series DAC1201D125 DAC1203D160 DAC1205D series DAC1401D125 DAC1403D160 DAC1405D series DAC1205D series DAC1408D series
Description
Demo board; LVCMOS inputs Demo board; LVCMOS inputs Demo boards; SPI, LVCMOS inputs Demo board; LVCMOS inputs Demo board; LVCMOS inputs Demo boards; SPI, LVCMOS inputs Demo board; LVCMOS inputs Demo board; LVCMOS inputs Demo boards; SPI, LVCMOS inputs Demo board; LVCMOS inputs Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo boards; Virtex 5 FPGA Demo boards with Lattice ECP3 FPGA Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo boards with Virtex 5 FPGA Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo boards with Virtex 5 FPGA ADC1413D080+DAC1408D650 with Lattice ECP3 FPGA demo kit
High-speed converter demo boards are available via your local NXP representative or authorized distributor.
ADC demo boards Type
ADC0801S040 ADC0804S series ADC0808S series ADC1002S020 ADC1003S series ADC1004S series ADC1005S060 ADC1006S series ADC1010S series
Description
Demo board; both CMOS and TTL outputs Demo boards; both CMOS and TTL outputs Demo boards; CMOS outputs Demo board; both CMOS and TTL outputs Demo boards; both CMOS and TTL outputs Demo boards; both CMOS and TTL outputs Demo board; both CMOS and TTL outputs Demo boards; both CMOS and TTL outputs Demo boards with both CMOS and LVDS outputs Demo boards CMOS version; SPI, regulators and CMOS buffer on board Demo boards LVDS output with SAMTEC connector; SPI, regulators on board Demo boards with both CMOS and LVDS outputs Demo boards; CMOS version; SPI, regulators and CMOS buffer on board; Demo boards; SPI, regulators on board; LVDS output with SAMTEC connector Demo board; CMOS version; SPI, regulators and CMOS buffer on board Demo board; SPI, regulators on board; LVDS output only SAMTEC connector Demo board; VIRTEX 5 FPGA on board Demo board; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo board; VIRTEX 5 FPGA on board Demo board; both CMOS and LVDS Demo board; CMOS version; SPI, regulators and CMOS buffer on board Demo board; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; both CMOS and TTL outputs Demo board; both CMOS and TTL outputs Demo boards with both CMOS and LVDS Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; VIRTEX 5 FPGA on board Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo board; Lattice ECP3 FPGA on board
DAC1208D series
DAC1008D series KIT ECP3
ADC1015S series
ADC1112D125
4.5
Samples
ADC1113D125 ADC1113S125 ADC1115S125 ADC1206S series ADC1207S080 ADC1210S series ADC1212D series
For samples of released or non-released products, please contact your local NXP sales representative or authorized distributor. NXP sales offices and distributors: http://www.nxp.com/profile/sales.
4.6
Datasheets
Datasheets are available on the NXP website: www.nxp.com.
ADC1213D series
97
Design support
4.7
Design-in support
If you need design-in support, please contact your local NXP sales representative or authorized distributor.
4.8
Interactive selection guides
On the NXP website you can find parametric filters to help you choose the right device for your design. Please go to the product category page of your choice and click on selection guide.
NEW : i-Phone App RF calculator tool available Check out the App store. Android app to be released in Q3.
98
5. Cross-references & replacements

NXP cross-references: http://www.nxp.com/search/ NXP end-of-life: http://www.nxp.com/products/eol/
5.1 Cross-references: manufacturer types versus NXP types

In alphabetical order of manufacturer type Abbreviations: Base station Broadcasts BS diode CATV OR CATV PD CATV PPA CATV PPA/HG CATV RA FET Microwave MMIC Varicap WB trs 1-4 WB trs 5-7
Manufacturer type
Base station power transistors Broadcast power transistors Band switch diode CATV optical receiver CATV power doubler CATV push-pull amplifier CATV push-pull amplifier high gain CATV reverse amplifier Field-effect transistor Microwave power transistors Monolithic microwave integrated circuit Varicap diode Wideband transistor 1-4 generation Wideband transistor 5-7 generation
Manufacturer NXP type Product family Manufacturer type Manufacturer NXP type Product family
10500 10502 PTF 081301F - 130 W AH125 SXB-4089 0910-150M 0910-300M 0910-60M 0912-45 1011LD200 1011LD300 1015MP 1035MP 1214-30 1214-32L 1SS314 1SS356 1SS381 1SS390 1SV172 1SV214 1SV214 1SV215 1SV228 1SV231 1SV232 1SV233 1SV234 1SV239
Microsemi Microsemi Infineon Triquint RFMD Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Toshiba Rohm Toshiba Rohm Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Sanyo Toshiba
BLA6H0912-500 BLA6H0912-500 BLF881 BGA7127 BGA7127 BLF871 BLF878 BLF878 BLL6H0514-25 BLA6G1011-200R BLA6G1011-200R BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLL6H0514-26 BA591 BA591 BA277 BA891 BAP50-04 BB149 BB149A BB153 BB201 BB152 BB148 BAP70-03 BAP64-04 BB145B
Microwave Microwave Broadcast MMIC MMIC Broadcast Broadcast Broadcast Microwave Microwave Microwave Microwave Microwave Microwave Microwave BS diode BS diode BS diode BS diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode Varicap
1SV241 1SV246 1SV247 1SV248 1SV249 1SV250 1SV251 1SV252 1SV254 1SV263 1SV264 1SV266 1SV267 1SV269 1SV270 1SV271 1SV278 1SV279 1SV282 1SV282 1SV283 1SV283 1SV284 1SV288 1SV290 1SV294 1SV305 1SV307 1SV308
Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Toshiba Toshiba Toshiba
BAP64-02 BAP64-04W BAP70-02 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BAP50-04W BB179 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BB148 BB156 BAP50-03 BB179 BB179 BB178 BB187 BB178 BB187 BB156 BB152 BB182 BAP70-03 BB202 BAP51-03 BAP51-02
PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap PIN diode PIN diode PIN diode PIN diode Varicap Varicap PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode Varicap PIN diode PIN diode 99
Cross-references & replacements
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
1SV322 1T362 1T362A 1T363A 1T368A 1T369 1T379 1T397 1T399 1T402 1T403 1T404A 1T405A 1T406 1T408 2729-125 2729-170 2731-100M 2931-150 2F1G20DS 2F1G20DS 2F1G20P 2F1G22DS 2F1G22DS 2F1G22DS 2F1G23P 2F1G23P 2F1G24D 2F1G24D 2F1G24DS 2F722DS 2F8718P 2F8719DS 2F8720DS 2F8723P 2F8734P 2N3330 2N3331 2N4220 2N4856 2N4857 2N4858 2N5114 2N5115 2N5116 2N5432 2N5433 2N5434 2N5457 2N5458 2N5459 2N5653 2N5654 2SC4094 2SC4095 2SC4182 2SC4184 2SC4185 2SC4186 2SC4226 2SC4227 2SC4228 2SC4247 2SC4248 2SC4315 2SC4320 2SC4321 2SC4325 2SC4394 2SC4536 2SC4537 2SC4592 2SC4593 2SC4703 2SC4784 2SC4807 100
Toshiba PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC Microsemi Microsemi Microsemi Microsemi RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard NEC NEC NEC NEC NEC NEC NEC NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba NEC Renesas Renesas Renesas NEC Renesas Renesas
BB202LX BB149 BB149A BB153 BB148 BB152 BB131 BB152 BB148 BB179B BB178 BB187 BB187 BB182 BB187 BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 CGD1042H CGD1040Hi CGY1041 CGD1042H CGD1042Hi CGD982HCi CGY1043 CGY1041 CGD1044Hi CGD985HCi CGD1044H BGD816L BGY885A BGD812 BGD814 BGY887 CGY888C J176 J176 BF245A BSR56 BSR57 BSR58 J174 J175 J175 J108 J108 J109 BF245A BF245A BF245B J112 J111 BFG520/XR BFG520/XR BFS17W BFS17W BFS17W BFR92AW PRF957 BFQ67W BFS505 BFR92AW BFR92AW BFG520/XR BFG520/XR BFQ67W BFS505 PRF957 BFQ19 BFR93AW BFG520/XR BFS520 BFQ19 BFS505 BFQ18A
Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Microwave Microwave Microwave Microwave CATV PD CATV PD CATV PP CATV PD CATV PD CATV PD CATV PP CATV PP CATV PD CATV PD CATV PD CATV PD CATV PP CATV PD CATV PD CATV PP CATV PP FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4
2SC4842 2SC4899 2SC4900 2SC4901 2SC4988 2SC5011 2SC5012 2SC5065 2SC5085 2SC5087 2SC5088 2SC5090 2SC5092 2SC5095 2SC5107 2SC5463 2SC5593 2SC5594 2SC5623 2SC5624 2SC5631 2SC6023 2SJ105GR 2SK163-K 2SK163-L 2SK163-M 2SK163-N 2SK210BL 2SK370BL 2SK370GR 2SK370V 2SK381 2SK43 2SK435 2SK508 3SK290 AH118 AH118 AH215 BA592 BA595 BA595 BA597 BA885 BA892 BA892-02V BA892-02V BA892V-02V-GS08 BA895 BAR14-1 BAR15-1 BAR16-1 BAR17 BAR50-02L BAR50-02V BAR50-02V BAR50-02V BAR50-03W BAR60 BAR61 BAR63 BAR63-02L BAR63-02L BAR63-02V BAR63-02W BAR63-03W BAR63-05 BAR63-05W BAR63V-02V-GS08 BAR63V-05W-GS08 BAR64-02LRH BAR64-02V BAR64-02W BAR64-03W BAR64-04 BAR64-04W
Toshiba Renesas Renesas Renesas Renesas NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Renesas Renesas Renesas Renesas Renesas Sanyo Standard Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Triquint Triquint Triquint Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon
BFG540W/XR BFS505 BFG520/XR BFS520 BFQ540 BFG540W/XR BFG540W/XR PRF957 PRF957 BFG520/XR BFG540W/XR BFS520 BFG520/XR BFS505 BFS505 BFQ67W BFG410W BFG425W BFG410W BFG425W BFQ540 BFG424W J177 J113 J113 J113 J113 PMBFJ309 J109 J109 J109 J113 J113 J113 PMBFJ308 BF998WR BGA7124 BGA7024 BGA7130 BA591 BAP51-03 BAP70-03 BAP70-03 BAP70-03 BA891 BA277 BA891 BA891 BAP70-02 BAP70-03 BAP70-03 BAP70-03 BAP50-03 BAP50LX BAP50-02 BAP50-03 BAP50-05 BAP70-02 BAP50-03 BAP50-03 BAP63-03 BAP63-02 BAP63LX BAP63-02 BAP63-02 BAP63-03 BAP63-05W BAP63-05W BAP63-02 BAP63-05W BAP64LX BAP64-02 BAP64-02 BAP64-03 BAP64-04 BAP64-04W
WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 5-7 FET FET FET FET FET FET FET FET FET FET FET FET FET FET MMIC MMIC MMIC BS diode PIN diode PIN diode PIN diode PIN diode BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
BAR64-05 BAR64-05W BAR64-06 BAR64-06W BAR64V-02V-GS08 BAR64V-04-GS08 BAR64V-05-GS08 BAR64V-06-GS08 BAR64V-06W-GS08 BAR65-02L BAR65-02V BAR65-02W BAR65-03W BAR65V-02V-GS08 BAR66 BAR67-02W BAR67-03W BAT18-04 BB304C BB304M BB305C BB305M BB403M BB501C BB501M BB502C BB502M BB503C BB503M BB535 BB545 BB555 BB565 BB601M BB639 BB639 BB640 BB641 BB659 BB664 BB664 BB669 BB814 BB831 BB833 BB835 BBY58-02V BBY65 BF1005R BF1005S BF1005SR BF1009S BF1009SR BF1009SW BF2030 BF2030 BF2030 BF2030R BF2030R BF2030R BF2030W BF2030W BF2030W BF2040 BF2040R BF2040W BF244A BF244B BF244C BF247A BF247B BF247C BF256A BF256B BF256C BF5020
Infineon Infineon Infineon Infineon Vishay Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Infineon Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Infineon Infineon Infineon Infineon Renesas Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Standard Standard Standard Standard Standard Standard Infineon
BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64-02 BAP64-04 BAP64-05 BAP64-06 BAP64-06W BAP65LX BAP65-02 BAP65-02 BAP65-03 BAP65-02 BAP1321-04 BAP1321-02 BAP1321-03 BAT18 BF1201WR BF1201R BF1201WR BF1201R BF909R BF1202WR BF1202R BF1202WR BF1202R BF1202WR BF1202R BB149 BB149A BB179B BB179 BF1202 BB148 BB153 BB152 BB152 BB178 BB178 BB187 BB152 BB201 BB131 BB131 BB131 BB202 BB202 BF1105R BF1105 BF1105R BF1109 BF1109R BF1109WR BF1101 BF1211 BF1212 BF1101R BF1211R BF1212R BF1101WR BF1211WR BF1212WR BF909 BF909R BF909WR BF245A BF245B BF245C J108 J108 J108 BF245A BF245B BF245C BF1212
PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode FET FET FET FET FET FET FET FET FET FET FET Varicap Varicap Varicap Varicap FET Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET
BF5020R BF5020W BF5030W BF770A BF771 BF771W BF772 BF775 BF775A BF775W BF851A BF851B BF851C BF994S BF996S BF998 BF998 BF998-GS08 BF998R BF998R BF998R-GS08 BF998RW BF998W BFG135A BFG193 BFG194 BFG196 BFG19S BFG235 BFP180 BFP181 BFP181T-GS08 BFP182 BFP183 BFP183R BFP183T-GS08 BFP183TW-GS08 BFP193 BFP193W BFP196T-GS08 BFP196TR-GS08 BFP196TRW-GS08 BFP196TW-GS08 BFP196W BFP280 BFP405 BFP420 BFP450 BFP67-GS08 BFP67R-GS08 BFP740 BFP740F BFP81 BFP92A-GS08 BFP93A BFP93A-GS08 BFQ193 BFQ19S BFQ67-GS08 BFR106 BFR180 BFR180W BFR181 BFR181T-GS08 BFR181TW-GS08 BFR181W BFR182 BFR182W BFR183 BFR183T-GS08 BFR183TW-GS08 BFR183W BFR193 BFR193TW-GS08 BFR193W BFR196T-GS08
Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Vishay Vishay Infineon Vishay Vishay Vishay Infineon Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Vishay Vishay Infineon Infineon Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Vishay Infineon Vishay Infineon Infineon Vishay Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Vishay Infineon Vishay
BF1212R BF1212WR BF909WR BFR93A PBR951 BFS540 BFG540 BFR92A BFR92A BFR92AW BF861A BF861B BF861C BF994S BF996S BF998 BF998 BF998 BF998R BF998R BF998R BF998WR BF998WR BFG135 BFG198 BFG31 BFG541 BFG97 BFG135 BFG505/X BFG67/X BFG67/X BFG67/X BFG520/X BFG520/XR BFG520/X BFG520W/X BFG540/X BFG540W/XR BFG540/X BFG540/XR BFG540W/XR BFG540W/X BFG540W/XR BFG505/X BFG410W BFG425W BFG480W BFG67/X BFG67/X BFU725F BFU725F BFG92A/X BFG92A/X BFG93A/X BFG93A/X BFQ540 BFQ19 BFQ67W BFR106 BFR505 BFS505 BFR520 BFR520 BFS520 BFS520 PBR941 PRF947 PBR951 PBR951 PRF957 PRF957 PBR951 PRF957 PRF957 BFR540
FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 101
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BFR196TW-GS08 BFR35AP BFR92AL BFR92AW-GS08 BFR92P BFR92W BFR93A BFR93AL BFR93AW BFR93AW-GS08 BFR93-GS08 BFS17-GS08 BFS17-GS08 BFS17L BFS17P BFS17W BFS17W-GS08 BFS481 BFS483 BFT92 BFT93 BG3123 BG3123R BG3130 BG3130R BG3430R BG5120K BG5130R BG5412K BG5412K BGA615 BGA715 BGA915 BIC701C BIC701M BIC702C BIC702M BIC801M BSR111 BSR112 BSR113 BSR174 BSR175 BSR176 BSR177 CA901 CA901A CA922 CA922A CMM6004-SC CMM6004-SC CMY91 CMY91 CXE1089Z CXE1089Z D10040180GT D10040180GTH D10040200GT D10040200GTH D10040200P1 D10040200PH1 D10040220GT D10040220GTH D10040230P1 D10040230PH1 D10040240GT D10040240GTH D10040250GT D10040250GTH D10040270GT D10040270GTH D10040270GTL D5540185 D7540185 D7540200 D8640185 102
Vishay Infineon Freescale Vishay Infineon Infineon Infineon Freescale Infineon Vishay Vishay Vishay Vishay Freescale Infineon Infineon Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Renesas Renesas Renesas Renesas Renesas Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Mimix Mimix Infineon Infineon RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD Standard Standard Standard Standard
BFS540 BFR92A BFR92A BFR92AW BFR92A BFR92AW BFR93A BFR93A BFR93AW BFR93AW BFR93A BFS17 BFS17A BFS17 BFS17A BFS17W BFS17W BFM505 BFM520 BFT92 BFT93 BF1203 BF1203 BF1214 BF1214 BF1207 BF1210 BF1206 BF1205C BF1208D BGU7007 BGU8007 BGU8007 BF1105WR BF1105R BF1105WR BF1105R BF1105 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BGX885N BGX885N BGD885 BGD885 BGA7124 BGA7024 BGA2022 BGA2022 BGA6489 BGA6589 CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1044H CGD1044H CGD1044H CGD1044H CGD1044H CGD1044H CGD1044H BGD502 BGD702 BGD704 BGD802
WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET MMIC MMIC MMIC FET FET FET FET FET FET FET FET FET FET FET FET CATV PPA CATV PPA CATV PD CATV PD MMIC MMIC MMIC WB trs 1-4 MMIC MMIC CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD
D8740180GT D8740180GTH D8740220GT D8740220GTH D8740240GT D8740240GTH D8740250GT D8740250GTH D8740270GT D8740270GTH D8740320GT D8740320GTH DME500 EC2C03C F2046 F2048 F2247 FSD273TA FSD273TA HBFP0405 HBFP0420 HBFP0450 HMC454ST89E HSC277 HSMP3800 HSMP3802 HSMP3804 HSMP3810 HSMP3814 HSMP381B HSMP381C HSMP381F HSMP3820 HSMP3822 HSMP3830 HSMP3832 HSMP3833 HSMP3834 HSMP3860 HSMP3862 HSMP3864 HSMP386B HSMP386E HSMP386L HSMP3880 HSMP3890 HSMP3892 HSMP3894 HSMP3895 HSMP389B HSMP389C HSMP389F HVB14S HVC131 HVC132 HVC200A HVC200A HVC202A HVC202B HVC300A HVC300B HVC306A HVC306B HVC355B HVC359 HVC363A HVC376B HVC376B HVD132 HVU131 HVU132 HVU202(A) HVU202(A) HVU300A HVU307 HVU315
RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD Microsemi Sanyo POLYFET POLYFET POLYFET Skyworks Skyworks Agilent Agilent Agilent Hittite Renesas Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas
CGD942C CGD942C CGD942C CGD942C CGD944C CGD944C CGD944C CGD944C CGD944C CGD944C CGD888C CGD888C BLAH0912-500 BB145B BLF542 BLF543 BLF522 BB148 BB178 BFG410W BFG425W BFG480W BGA7127 BA277 BAP70-03 BAP50-04 BAP50-05 BAP50-03 BAP50-05 BAP50-03 BAP50-05 BAP64-05W BAP1321-03 BAP1321-04 BAP64-03 BAP64-04 BAP64-06 BAP64-05 BAP50-03 BAP50-04 BAP50-05 BAP50-02 BAP50-04W BAP50-05W BAP51-03 BAP51-03 BAP64-04 BAP64-05 BAP51-02 BAP51-02 BAP64-04 BAP51-05W BAP50-04W BAP65-02 BAP51-02 BB178 BB187 BB179 BB179B BB182 BB182 BB187 BB187 BB145B BB202 BB178 BB198 BB202 BAP51-02 BAP65-03 BAP51-03 BB149 BB149A BB152 BB148 BB148
CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD Microwave Varicap Broadcast Broadcast Broadcast Varicap Varicap WB trs 5-7 WB trs 5-7 WB trs 5-7 MMIC BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap
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HVU316 HVU363A HVU363A HVU363B IB0810M100 IB0912L30 IB0912L70 IB0912M210 IB0912M500 IB0912M600 IB1011L15 IB1011L220 IB1011L40 IB1011L470 IB1011M140 IB1011M190 IB1011M250 IB1011S190 IB1011S250 IB1012S10 IB1012S20 IB2729M5 IB2729M90 IB2731M110 IB2731MH110 IB2931MH155 IB3134M100 IB3135MH100 IBP1214M700 IBP1214M700 IBP3135M150 IDM175CW300 IDM500CW150 IDM500CW200 IDM500CW300 IDM500CW80 ILD1011M15 ILD1011M150 ILD1011M15HV ILD1011M160HV ILD1011M250 ILD1011M30 ILD1011M400 ILD1011M450HV ILD1011M550HV ILD1214M10 ILD2731M140 ILD3135M120 ILP1214EL200 INA-51063 J270 J308 J309 J310 JDP2S01E JDP2S01U JDP2S02AFS JDP2S02AS JDP2S02T JDP2S04E JDS2S03S JTDA150A KP2310R KTK920BT KTK920T KV1835E LC421 MA2S077 MA2S357 MA2S357 MA2S372 MA2S374 MA2SV01 MA357 MA366 MA368
Renesas Renesas Renesas Renesas Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Agilent Standard Standard Standard Standard Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Microsemi Toko KEC KEC Toko POLYFET Standard Matsushita Matsushita Matsushita Matsushita Renesas Matsushita Matsushita Matsushita
BB131 BB148 BB153 BB148 BLF871 BLA6H0514-25 BLA6H0514-25 BLA6H0514-25 BLA6H0912-500 BLA6H0912-500 BLA6H0514-25 BLA6G1011-200R BLA6H0514-25 BLA6H0912-500 BLA6G1011-200R BLA6G1011-200R BLA6G1011-200R BLA6G1011-200R BLA6G1011-200R BLA6H0514-25 BLA6H0514-25 BLS6G2731-6G BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 BLS6G3135S-120 BLS6G3135S-120 BLL6H1214-500 BLL6H1214-500 BLS6G3135S-120 BLF278 BLF881 BLF888 BLF878 BLF871 BLL6H0514-25 BLA6G1011-200R BLA6H0514-25 BLA6G1011-200R BLA6G1011-200R BLA6H0514-25 BLA6H0912-500 BLA6H0912-500 BLA6H1011-600 BLL6H0514-25 BLS6G2731-120 BLS6G3135S-120 BLS7G2933P-200 BGA2001 J177 J108 J109 J110 BAP65-02 BAP65-03 BAP51-02 BAP51-03 BAP63-02 BAP50-02 BA891 BLF177 BAP64-04W BF1108 BF1108R BB199 BLF544 BA277 BB178 BB187 BB179 BB182 BB202 BB153 BB148 BB131
Varicap Varicap Varicap Varicap Broadcast Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Broadcast Broadcast Broadcast Broadcast Broadcast Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave MMIC FET FET FET FET PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode BS diode Broadcast PIN diode FET FET Varicap Broadcast BS diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap
MA372 MA372 MA4CP101A MA4P274-1141 MA4P275-1141 MA4P275CK-287 MA4P277-1141 MA4P278-287 MA4P789-1141 MA4P789ST-287 MAX2659 MAX2659 MAX2659 MC7712 MC7716 MC7722 MC7726 MC-7831 MC7831-HA MC-7831-HA MC-7832 MC7832-HA MC-7832-HA MC-7833 MC-7836 MC-7836 MC-7845 MC-7846 MC-7847 MC7852 MC7866 MC-7881 MC-7882 MC-7883 MC-7884 MC-7891 MC7893 MC7893 MC-7893 MC7894 MC7894 MC-7894 MC7896 MC7896 MC-7896 MCH4009 MD7P19130 MD7P19130H MD7P19130H (2) MDS400 MDS800 MHW10186N MHW10236N MHW10247AN MHW10276N MHW1224 MHW1244 MHW1253LA MHW1254L MHW1254LA MHW1304L MHW1304LA MHW1304LAN MHW1346 MHW1353LA MHW1354LA MHW5182A MHW5185B MHW5222A MHW5272A MHW5342A MHW5342T MHW6182 MHW6182-6 MHW6182T MHW6185B
Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Maxim Maxim Maxim NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC Sanyo Freescale Freescale Freescale Microsemi Microsemi Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale
BB149 BB149A BAP65-03 BAP51-03 BAP65-03 BAP65-05 BAP70-03 BAP70-03 BAP1321-03 BAP1321-04 BGU7003 BGU7005 BGU7007 BGY785A BGY787 BGY785A BGY787 BGY885A BGY1085A BGY1085A BGY887 CGY1041 CGY1041 BGY887B BGY887B CGY1047 BGD802 CGD942C CGD944C BGY885A BGD816L BGD802 BGD814 CGD942C CGD944C CGD1042H CGD1042Hi CGD982HCi CGD1042H CGD1044Hi CGD985HCi CDG1044H CGD1046Hi CGD987HCi CGD1044H BFG424F BLF6G20LS-110 BLF6G20LS-75 BLF6G20(LS)-180RN BLA6H0912-500 BLA6H1011-600 BGY1085A CGY1043 CGD1044H CGY1047 BGY67 BGY67A BGY67A BGY68 BGY68 BGY68 BGY68 BGY68 BGY67A BGY67A BGY68 BGY585A BGD502 BGY587 BGY587B BGY588N BGY588N BGY585A BGY685A BGY585A BGD502
Varicap Varicap PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode MMIC MMIC MMIC CATV PPA CATV PPA CATV PPA CATV PPA CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PD CATV PD CATV PD CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD WB trs 5-7 Base station Base station Base station Microwave Microwave CATV PP CATV PP CATV PD CATV PP CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV PPA CATV PD CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PPA CATV PD 103
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MHW6185T MHW6205 MHW6222 MHW6222B MHW6222T MHW6272 MHW6272T MHW6342 MHW6342T MHW7182B MHW7182C MHW7185C2 MHW7185CL MHW7205C MHW7205CL MHW7205CLN MHW7222 MHW7222A MHW7222B MHW7242A MHW7272A MHW7292 MHW7292A MHW7292AN MHW7342 MHW8142 MHW8182B MHW8182C MHW8182CN MHW8185 MHW8185L MHW8188AN MHW8205 MHW820L MHW8222BN MHW8227A MHW8227AN MHW8247A MHW8247AN MHW8292 MHW8342 MHW8342N MHW9146 MHW9182B MHW9182C MHW9182CN MHW9186 MHW9186A MHW9187N MHW9188AN MHW9188N MHW9227AN MHW9242A MHW9247 MHW9247A MHW9247AN MHW9247N MHWJ5272A MHWJ7185A MHWJ7205A MHWJ7292 MHWJ9182 MMBF4391 MMBF4392 MMBF4393 MMBF4860 MMBF5484 MMBFJ113 MMBFJ174 MMBFJ175 MMBFJ176 MMBFJ177 MMBFJ308 MMBFJ309 MMBFJ310 MMBFU310 104
Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale
BGD502 BGD704 BGY587 BGY687 BGY587 BGY587B BGY587B BGY588N BGY588N BGY785A BGY785A BGD712 BGD712 BGD714 BGD714 BGD714 BGY787 BGY787 BGY787 BGE787B BGE787B BGE787B BGE787B BGE787B BGE788 BGY883 BGY885A BGY885A BGY885A BGD814 BGD812 CGD942C BGD814 BGD814 BGY887 CGD942C CGD942C CGD944C CGD944C BGY887B BGY888 CGY888C BGY883 BGY1085A BGY1085A BGY1085A BGY885A BGY885A CGD942C CGD942C CGD942C CGD942C CGD1042 CGD944C CGD944C CGD944C CGD944C BGY587B BGD712 BGD714 BGE787B BGY1085A PMBF4391 PMBF4392 PMBF4393 PMBFJ112 BFR31 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ310
CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PPA CATV PP CATV PD CATV PD CATV PD CATV PD CATV PD CATV PP CATV PD CATV PD CATV PPA CATV PD CATV PPA CATV PPA CATV PP CATV PPA CATV PPA CATV PPA CATV PP CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PD CATV PD CATV PPA/HG CATV PPA FET FET FET FET FET FET FET FET FET FET FET FET FET FET
MMBR5031L MMBR5179L MMBR571L MMBR901L MMBR911L MMBR920L MMBR931L MMBR941BL MMBR941L MMBR951AL MMBR951L MMBV105GLT1 MMBV109LT1 MMG2001NT1 MMG2001T1 MMG3004NT1 MMG3014 MMG3014 MPAL2731M15 MPAL2731M30 MPAL3035M15 MPAL3035M30 MPF102 MPF970 MPF971 MRF10005 MRF1000MB MRF10031 MRF1004MB MRF10120 MRF10150 MRF10350 MRF10502 MRF1090MB MRF1150MA MRF1150MB MRF134 MRF136 MRF136Y MRF137 MRF140 MRF141 MRF141G MRF148A MRF150 MRF151 MRF151A MRF151G MRF154 MRF157 MRF158 MRF160 MRF166C MRF166W MRF171A MRF173 MRF173CQ MRF174 MRF175GU MRF175GV MRF175LU MRF176GU MRF176GV MRF177 MRF18030ALR3(1) MRF18030ALR3(1) MRF18030ALSR3(1) MRF18030ALSR3(1) MRF18030BLR3(1) MRF18030BLR3(1) MRF18030BLSR3(1) MRF18030BLSR3(1) MRF18060AL(2) MRF18060BL(2) MRF18085AL(2) MRF18085BL (2)
Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale ONSemicond. ONSemicond. Freescale Freescale Freescale Freescale Freescale Integra Integra Integra Integra Standard Standard Standard M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale
BFS17 BFS17A PBR951 BFR92A BFR93A BFR93A BFT25A PBR941 PBR941 PBR951 PBR951 BB156 BB148 BGD816L BGD816L BGA7127 BGA7124 BGA7024 BLS6G2731-6G BLS6G2731-6G BLS6G2731-6G BLS6G2731-6G BF245A J174 J176 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLF871 BLF871 BLF881 BLF881 BLF177 BLF177 BLF278 BLF175 BLF177 BLF177 BLF177 BLF278 BLF574 BLF574 BLF871 BLF871 BLF871 BLF881 BLF881 BLF871 BLF871 BLF881 BLF881 BLF278 BLF871 BLF881 BLF573S BLF871 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLC6G20-75 BLC6G20-75 BLC6G20-75 BLF7G20L(S)-300P
WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Varicap Varicap CATV PD CATV PD MMIC MMIC MMIC Microwave Microwave Microwave Microwave FET FET FET Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station
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NXP type
Product family
MRF18085BL(2) MRF18090AR3(1) MRF18090B (2) MRF18090B(2) MRF19030L(2) MRF19030L(2) MRF19045L(2) MRF19060L(2) MRF19085LR3(1) MRF19085LSR3(1) MRF19090R3 (1) MRF19090R3(1) MRF19090SR3 (1) MRF19090SR3(1) MRF19125 (2) MRF19125(2) MRF21010LR1(1) MRF21010LSR1(1) MRF21030LR3(1) MRF21030LSR3(1) MRF21045LR3(1) MRF21045LSR3(1) MRF21060L(2) MRF21085L(2) MRF21090(2) MRF21120R6(1) MRF21125(2) MRF21125SR3(1) MRF21180R6(1) MRF275G MRF275L MRF281SR1(1) MRF281ZR1(1) MRF282SR1(1) MRF282ZR1(1) MRF284LR1(1) MRF284LSR1(1) MRF313 MRF314 MRF316 MRF317 MRF321 MRF323 MRF327 MRF372 (3) MRF373ALR1 (1) MRF373ALR1 (2) MRF373ALSR1 (1) MRF374A (1) MRF377H (1) MRF377H (2) MRF377H(2) MRF392 MRF393 MRF421 MRF422 MRF426 MRF428 MRF429 MRF448 MRF454 MRF455 MRF577 MRF5811L MRF5P20180HR6(1) MRF5P21045NR1 (1) MRF5P21180HR6 (1) MRF5P21180HR6(1) MRF5S19060N(2) MRF5S19090HR3(1) MRF5S19090HSR3(1) MRF5S19100H (2) MRF5S19100H(2) MRF5S19130H (2) MRF5S19130H(2) MRF5S19150H (2)
Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale Freescale M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale
BLC6G20-75 BLF6G20-110 BLF7G20L(S)-300P BLF6G20-110 BLF6G21-30 BLF6G20-45 BLF6G20-45 BLF6G20-45 BLF6G20-110 BLF6G20-110 BLF7G20L(S)-300P BLF6G20-110 BLF7G20L(S)-300P BLF6G20-110 BLF6G20(LS)-110 BLF6G20-140 BLF3G21-6 BLF3G21-6 BLF6G22-30 BLF6G22-45 BLF6G22-45 BLF6G22-45 BLF6G22-75 BLF6G22-100 BLF6G22-100 BLF6G22-130 BLF6G22-130 BLF6G22-130 BLF6G22-180 BLF881 BLF871 BLF6G21-6 BLF6G21-6 BLF1822-10 BLF1822-10 BLF3G21-30 BLF3G21-30 BLF871 BLF881 BLF871 BLF871 BLF871 BLF871 BLF871 BLF881 BLF871 BLF878 BLF871 BLF881 BLF888 BLF878 BLF872 BLF881 BLF871 BLF871 BLF177 BLF871 BLF177 BLF177 BLF573S BLF871 BLF871 PRF957 BFG93A/X BLF6G20-180P BLD6G22L(S)-50 BLF6G22(LS)-180RN BLF6G20-180P BLF6G20-75 BLF6G20-110 BLF6G20-110 BLF7G20L(S)-140P BLF6G20-110 BLF6G20(LS)-110 BLF6G20-140 BLF6G20LS-140
Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Broadcast Broadcast Base station Base station Base station Base station Base station Base station Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Base station Broadcast Base station Broadcast Base station Broadcast Base station Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast WB trs 1-4 WB trs 1-4 Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station
MRF5S19150H(2) MRF5S21045N (2) MRF5S21045N(2) MRF5S21090HR3(1) MRF5S21090HSR3(1) MRF5S21100HR3(1) MRF5S21100HSR3(1) MRF5S21130HR3(1) MRF5S21130HSR3(1) MRF5S21150H(2) MRF5S9150H (2) MRF6P18190HR6(1) MRF6P21190HR6 (1) MRF6P21190HR6(1) MRF6P3300H (2) MRF6P3300H(2) MRF6S18060N(2) MRF6S18100N(2) MRF6S18140H(2) MRF6S19060N(2) MRF6S19100H (2) MRF6S19100H(2) MRF6S19100N(2) MRF6S19120H (2) MRF6S19120H(2) MRF6S19140H (2) MRF6S19140H(2) MRF6S19200H (2) MRF6S20010 MRF6S20010 MRF6S20010N (2) MRF6S20010N(2) MRF6S20010N(2) MRF6S21050L(2) MRF6S21060N (2) MRF6S21060N(2) MRF6S21100H (2) MRF6S21100H(2) MRF6S21100N (2) MRF6S21100N(2) MRF6S21140H (2) MRF6S21140H(2) MRF6S21190H MRF6S21190H MRF6S21190H (2) MRF6S23100H (2) MRF6S23100H (2) MRF6S27015N MRF6S27015N (2) MRF6S27015N (2) MRF6S27050HR3 MRF6S27050HSR3 MRF6S27085H MRF6S27085H (2) MRF6S27085HR3 MRF6S27085HS MRF6S27085HSR3 MRF6V10010N (1) MRF6V10250HS (1) MRF6V12250H (2) MRF6V12500H (2) MRF6V14300H (2) MRF6V2010N (2) MRF6V2010N(2) MRF6V2010NBR1(18a) MRF6V2010NR1(18a) MRF6V2150N (2) MRF6V2150N(2) MRF6V2150NBR1(18a) MRF6V2150NR1(18a) MRF6V2300N (2) MRF6V2300N(2) MRF6V2300N(2) MRF6V3090N (4) MRF6V4300N (2)
Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale
BLF6G22-150P BLD6G22L(S)-50 BLF1822-10 BLF6G22-100 BLF6G22-100 BLF6G22-100 BLF6G22-100 BLF6G22-130 BLF6G22-130 BLF6G22-150P BLF6G10(LS)-160RN BLF6G20-180P BLF7G22LS-130 BLF6G20-180P BLF888 BLF878 BLF6G20-75 BLF6G20-110 BLF6G20-140 BLF6G20-75 BLF7G20L(S)-140P BLF6G20-110 BLF6G20-110 BLF7G20L(S)-140P BLF6G20-110 BLF6G20LS-75 BLF6G20-140 BLF6G20-180PN, BLF7G20L(S)-200 BLM6G22-30 BLM6G22-30G BLM6G22-30 BLF6G21-6 BLF1822-10 BLF6G22-45 BLF6G22LS-75 BLF6G22-75 BLF6G22LS-100 BLF6G22-100 BLF6G22LS-100 BLF6G22-100 BLF6G22L(S)-130 BLF6G22-130 BLF6G22-180P BLF6G22-180PN BLF7G22L(S)-200 BLF7G27L(S)-75P BLF7G27L(S)-75P BLF6G27-10 BLF6G27-10(G) BLF6G27-10(G) BLF6G27-45 BLF6G27S-45 BLF6G27LS-135 BLF7G27L(S)-140 BLF6G27-135 BLF6G27LS-75 BLF6G27LS-135 BLL6H0514-25 BLA0912-250R BLA6H0912-500 BLA6H0912-500 BLL6H1214-500 BLF571 BLF244 BLF872 BLF871 BLF871 BLF177 BLF882 BLF881 BLF573S BLF369 BLF378 BLF871 BLF573S
Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Microwave Microwave Microwave Microwave Microwave Base station Broadcast Broadcast Broadcast Base station Broadcast Broadcast Broadcast Base station Broadcast Broadcast Broadcast Base station 105
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
MRF6VP11KH (1) MRF6VP21KH (1) MRF6VP2600H (1) MRF6VP2600HR6(18o) MRF6VP3450 MRF6VP3450H (4) MRF6VP41KH (2) MRF7S15100H (2) MRF7S18125AHS MRF7S18170H (2) MRF7S18170H(2) MRF7S19080H (2) MRF7S19080H(2) MRF7S19080HS MRF7S19100 MRF7S19100N (2) MRF7S19100N(2) MRF7S19120N(1) MRF7S19120NR1 (1) MRF7S19170H (2) MRF7S19170H(2) MRF7S19210H MRF7S21080H (2) MRF7S21110H (2) MRF7S21110HS MRF7S21150H (2) MRF7S21170 MRF7S21170H (2) MRF7S21210H (2) MRF7S27130H (2) MRF7S35015HSR3 (1) MRF7S35120HSR3 (1) MRF7S38010H MRF7S38010H (2) MRF7S38040H MRF7S38040H (2) MRF7S38040HR3 MRF7S38040HSR3 MRF8S18120H (2) MRF9030L (2) MRF9030N (2) MRF9135L (2) MRF917 MRF9200L (2) MRF9210R3 (1) MRF927 MRF9411L MRF947 MRF947A MRF9511L MRF957 MRFE6P3300H MRFE6P3300H (2) MRFE6S9125N MRFE6S9125N (2) MRFE6S9130H (2) MRFE6S9135H (2) MRFE6S9135HS MRFE6S9160H (2) MRFE6S9201H (2) MRFE6S9205HS MS1003 MS1004 MS1007 MS1008 MS1011 MS1051 MS1076 MS1078 MS1079 MS1204 MS1277 MS1278 MS1279
Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
BLF578 BLF578 BLF871 BLF881 BLF878 BLF878 BLF578 BLF6G15L(S)-40BRN/ BLF6G15L(S)-250PBRN BLF6G20LS-140 BLF7G20L(S)-200 BLF6G22-180 BLF6G20(LS)-110 BLF6G20-110 BLF6G20LS-75 BLF6G20LS-110 BLF6G20LS-75 BLF6G20-110 BLF6G20-110 BLF6G20LS-140 BLF6G20-180PN, BLF7G20L(S)-200 BLF6G20-180 BLF6G20-230PRN BLF6G22LS-100 BLF6G22L(S)-130 BLF6G22LS-100 BLF7G22LS-130 BLF6G22LS-100 BLF6G22-180PN BLF7G22L(S)-250P BLF7G27L(S)-140 BLS6G3135-20 BLS6G3135-120 BLF6G38-10G BLF6G38(S)-25 BLF6G38LS-50 BLF6G38(LS)-50 BLF6G28-50 BLF6G28LS-51 BLF7G20L(S)-250P BLF6G10(LS)-160RN BLF6G10(LS)-160RN BLF6G10(LS)-135RN BFQ67W BLF6G10L(S)-260PRN BLF6G10L(S)-260PRN BFS25A BFG520/X BFS520 PRF947 BFG540/X PRF957 BLF878 BLF573 BLF6G10LS-135R BLF6G10(LS)-135RN BLF6G10(LS)-135RN BLF6G10(LS)-200RN BLF6G10LS-135R BLF6G10(LS)-160RN BLF6G10(LS)-200RN BLF6G10LS-200RN BLF645 BLF888 BLF871 BLF871 BLF888 BLF871 BLF888 BLF871 BLF888 BLF645 BLF888 BLF888 BLF888
Base station Base station Base station Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Microwave Microwave Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station WB trs 1-4 Base station Base station WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast
MS1280 MS1329 MS1453 MS1503 MS1506 MS1507 MS1509 MS1511 MS1533 MS2001 MS2003 MS2003 MS2005 MS2010 MS2176 MS2200 MS2207 MS2210 MS2215 MS2267 MS2321 MS24221 MS2441 MS2472 MS2473 MS2553 MS2575 MS3024 MSC1015MP MSC1175M MSC1400M MSC1450M MT4S200T MT4S200U MT4S34U MV2109G MW6IC2240N (2) MW6S004NT1 (1) MW6S010N (2) MW7IC2725GNR1 MW7IC2725N MW7IC2725N MW7IC2725NB MW7IC2725NR1 MW7IC2750GNR1 MW7IC2750N (3) MW7IC2750NR1 MW7IC3825GN MW7IC3825N MW7IC3825N (3) MW7IC3825NB MW7IC915N (1) NESG3032M14 OS8740230W PD55012-E PD55025-E PD55035-E PD57018-E PD57030-E PD57045-E PD57060-E PD57070-E PD85015-E PD85025C PD85025-E PD85035C PD85035-E PRF134 PRF134 PRF136 PRF136 PRF947B PRF947B PTF 041501E - 150 W PTF 041501F - 150 W PTF 080101M - 10 W
Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Toshiba Toshiba Toshiba ONSemicond. Freescale Freescale Freescale Freescale Freescale Infineon Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale NEC RFMD ST ST ST ST ST ST ST ST ST ST ST ST ST POLYFET Infineon POLYFET Infineon Motorola Infineon Infineon Infineon Infineon
BLF888 BLF878 BLF881 BLF871 BLF881 BLF881 BLF871 BLF878 BLF645 BLF6G22-45 BLF6G22-45 BLF6G22-45 BLF6G22-45 BLF6G22-45 BLF878 BLA6H0912-500 BLA6H0912-500 BLA6G1011-200R BLF177 BLA6G1011-200R BLL6H0514-25 BLA6G1011-200R BLAH0912-500 BLAH0912-500 BLA6H1011-600 BLL6H0514-25 BLL6H0514-25 BLF6G22-45 BLL6H0514-25 BLA6G1011-200R BLAH0912-500 BLA6H0912-500 BFG424W BFG425W BFG410W BB182LX BLF6G22LS-75 BLF6G21-10G BLL6H0514-25 BLF6G27-10G BLF6G27-10G BLF6G27-10G BLF6G27-10 BLF6G27-10 BLF6G27LS-75 BLF6G27(LS)-75 BLF6G27-75 BLF6G38S-25 BLF6G38-25 BLF6G38(S)-25 BLF6G38-25 BLF6G10L(S)-260PRN BFU725F BGO807C BLF571 BLF571 BLF571 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLF571 BLF571 BLF571 BLF571 BLF571 BLF242 BLF242 BLF244 BLF244 PRF947 PRF947 BLF881S BLF881S BLF571
Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Microwave Microwave Microwave Broadcast Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Broadcast Microwave Microwave Microwave Microwave WB trs 5-7 WB trs 5-7 WB trs 5-7 Varicap Base station Base station Microwave Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station WB trs 5-7 CATV OR Broadcast Broadcast Broadcast Microwave Microwave Microwave Microwave Microwave Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast WB trs 1-4 WB trs 1-4 Broadcast Broadcast Broadcast
106
Manufacturer type
Manufacturer
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Manufacturer type
Manufacturer
NXP type
Product family
PTF 080101S - 10 W PTF 081301E - 130 W PTF 180101S - 10 W PTF 191601E - 160 W PTF 210101M - 10 W PTF 210451E - 45 W PTF 210451F - 45 W PTF 240101S - 10 W PTF041501E-150 W PTF041501E-150 W PTF041501F-150 W PTF041501F-150 W PTF080101M-10 W PTF080101M-10 W PTF080101S-10 W PTF080101S-10 W PTF081301E-130 W PTF081301E-130 W PTF081301F-130 W PTF081301F-130 W PTF082001E-200 W PTF082001E-200 W PTF180101 PTF180101 PTFA 041501E 175 W PTFA 041501F 175 W PTFA 041501GL - 175 W PTFA 041501HL - 175 W PTFA 043002E - 300 W PTFA 070601E - 60 W PTFA 070601F - 60 W PTFA 072401EL - 240 W PTFA 072401FL - 240 W PTFA 080551E - 55 W PTFA 080551F - 55 W PTFA 081501E - 150 W PTFA 081501F - 150 W PTFA 082201E - 220 W PTFA 082201F - 220 W PTFA 091201E - 120 W PTFA 091201F - 120 W PTFA 091201GL - 120 W PTFA 091201HL - 120 W PTFA 092201E - 220 W PTFA 092201F - 220 W PTFA 092211EL - 250 W PTFA 092211FL - 250 W PTFA 092213 EL - 250 W PTFA 092213 FL - 250 W PTFA 142401EL - 240 W PTFA 142401FL - 240 W PTFA 180701E - 70 W PTFA 180701F - 70 W PTFA 181001E - 100 W PTFA 181001F - 100 W PTFA 181001GL - 100 W PTFA 191001E - 100 W PTFA 191001F - 100 W PTFA 192001E - 200 W PTFA 192001F - 200 W PTFA 192401E - 240 W PTFA 192401F - 240 W PTFA 210301E - 30 W PTFA 210701E - 70 W PTFA 210701F - 70 W PTFA 211001E - 100 W PTFA 211801E - 180 W PTFA 211801F - 180 W PTFA 212001E - 200 W PTFA 212001F - 200 W PTFA 212002E - 200 W PTFA 212401E - 240 W PTFA 212401F - 240 W PTFA 240451E - 45 W PTFA 260451E - 45 W PTFA 260851E - 85 W
Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Freescale Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon
BLF571 BLF881 BLF6G20-40 BLF7G20L(S)-300P BLD6G22L(S)-50 BLF7G22L(S)-200 BLF7G22L(S)-200 BLF7G27L(S)-100 BLF647 BLF647 BLF647 BLF647 BLF1043 BLF1043 BLF1043 BLF1043 BLF4G10-120 BLF4G10-120 BLF4G10-120 BLF4G10-120 BLF6G10-200 BLF6G10-200 BLF6G21-10G BLF6G21-10G BLF888 BLF888 BLF888 BLF888 blf573 BLF878 BLF878 BLF573 BLF573 BLF878 BLF878 BLF881 BLF881 BLF573 BLF573 BLF881 BLF881 BLF881 BLF881 BLF573 BLF573 BLF573 BLF573 BLF573 BLF573 BLF6G15L(S)-250PBRN BLF6G15L(S)-250PBRN BLF6G20(LS)-110 BLF6G20(LS)-110 BLF6G20(LS)-180RN BLF6G20(LS)-180RN BLF6G20(LS)-180RN BLF6G20(LS)-110 BLF6G20(LS)-110 BLF6G20-180PN BLF6G20-180PN BLF6G20-180PN BLF6G20-180PN BLD6G22L(S)-50 BLF6G22LS-75 BLF6G22LS-75 BLF6G22LS-100 BLF7G22L(S)-250P BLF7G22L(S)-250P BLF6G22-180PN BLF6G22-180PN BLF7G22LS-130 BLF6G22-180PN BLF6G22-180PN BLF7G27L(S)-100 BLF6G27(LS)-75 BLF6G27L(S)-45BN
Broadcast Broadcast Base station Base station Base station Base station Base station Base station Broadcast Broadcast Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station
PTFA 260851F - 85 W PTFA 261301E - 130 W PTFA 261301F - 130 W PTFA 261702E - 170 W PTFA043002E-300 W PTFA043002E-300 W PTFA080551E-55 W PTFA080551F-55 W PTFA081501E-150 W PTFA081501F-150 W PTFA091201E-120 W PTFA091201F-120 W PTMA 080152M - 20 W PTMA 080302M - 40 W PTMA 210452EL - 45 W PTMA 210452FL - 45 W PZFJ108 PZFJ109 PZFJ110 R0605250L R0605250L R0605300L R0605300L R1005250L R2005200P12 R2005240 R2005240 R2005240P12 R2005350L RN142G RN142S RN242CS RN731V RN739D RN739F S10040200P S10040220GT S10040220P S10040230GT S10040240P S10040280GT S10040340 S505T S505TR S505TRW S5540220 S595T S595TR S595TRW S7540185 S7540215 S8740180GT S8740190 S8740190 S8740200P S8740220 S8740220GT S8740220P S8740230 S8740240GT S8740240P S8740240P12 S8740260GT S8740280GT S8740340 S8740340PT S949T S949TR S949TRW S974T S974T-GS08 S974TR S974TR-GS08 S974TRW S974TRW-GS08 SA701
Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Standard RFMD Standard RFMD RFMD RFMD Standard RFMD RFMD RFMD Rohm Rohm Rohm Rohm Rohm Rohm RFMD RFMD RFMD RFMD RFMD RFMD RFMD Vishay Vishay Vishay Standard Vishay Vishay Vishay Standard Standard RFMD Standard RFMD RFMD Standard RFMD RFMD Standard RFMD RFMD RFMD RFMD RFMD RFMD RFMD Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay POLYFET
BLF6G27(LS)-135 BLF7G27L(S)-200P BLF7G27L(S)-100 BLF7G27L(S)-140 BLF878 BLF878 BLF6G10-45 BLF6G10-45 BLF6G10-160 BLF6G10-160 BLF4G10-120 BLF4G10-120 BLF871 BLF881 BLF6G22(S)-45 BLF6G22(S)-45 J108 J109 J110 BGY66B BGS67A BGY68 BGY68 BGY66B BGY67 BGY67A BGY67A BGY67A BGR269 BAP1321-03 BAP1321-02 BAP51LX BAP50-03 BAP50-04 BAP50-04W CGY1041 CGY1041 CGY1041 CGY1043 CGY1043 CGY1047 CGY1034 BF1101 BF1101R BF1101WR BGY587 BF1105 BF1105R BF1105WR BGY785A BGY787 BGY885A BGD812 BGY885A BGY887 BGD814 BGY887 BGY887 BGD816L BGY887 BGY887 BGY887 CGY887A CGY887B CGY888C CGY888C BF1109 BF1109R BF1109WR BF1109 BF1109 BF1109R BF1109R BF1109WR BF1109WR BLF145
Base station Base station Base station Base station Broadcast Broadcast Base station Base station Base station Base station Base station Base station Broadcast Broadcast Base station Base station FET FET FET CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP FET FET FET CATV PPA FET FET FET CATV PPA CATV PPA CATV PP CATV PD CATV PP CATV PP CATV PD CATV PP CATV PP CATV PD CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP FET FET FET FET FET FET FET FET FET Broadcast 107
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
SA701 SA741 SD1018 SD1018-06 SD1019-05 SD1422 SD1485 SD56120 SD56120M SD57030 SD57030-01 SD57120 SD702 SDV701Q SDV704Q SDV705Q SE701 SGA8343Z SK701 SK701 SK702 SM341 SM704 SM704 SMP1302-004 SMP1302-005 SMP1302-011 SMP1302-074 SMP1302-075 SMP1302-079 SMP1304-001 SMP1304-011 SMP1307-001 SMP1307-011 SMP1320-004 SMP1320-011 SMP1320-074 SMP1321-001 SMP1321-005 SMP1321-011 SMP1321-075 SMP1321-079 SMP1322-004 SMP1322-011 SMP1322-074 SMP1322-079 SMP1340-011 SMP1340-079 SMP1352-011 SMP1352-079 SMV1235-004 SMV1236-004 SR341 SR341 SR401 SR401 SR401 SR703 SR704U SST111 SST112 SST113 SST174 SST175 SST176 SST177 SST201 SST202 SST203 SST308 SST309 SST310 SST4391 SST4392 SST4393 SST4856 108
POLYFET POLYFET Microsemi Microsemi Microsemi Microsemi Microsemi ST ST ST ST ST POLYFET AUK AUK AUK POLYFET Sirenza POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
BLF245 BLF175 BLF881 BLF881 BLF645 BLF871 BLF888 BLF871 BLF881 BLL6H0514-25 BLL6H0514-25 BLF578 BLF246B BB179 BB178 BB182 BLF245B BFG425W BLF544B BLF545 BLF546 BLF177 BLF147 BLF246 BAP50-05 BAP50-04 BAP50-03 BAP50-05W BAP50-04W BAP50-02 BAP70-03 BAP70-03 BAP70-03 BAP70-03 BAP65-05 BAP65-03 BAP65-05W BAP1321-03 BAP1321-04 BAP1321-03 BAP1321-04 BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB181 BB156 BLF378 BLF278 BLF248 BLF348 BLF368 BLF547 BLF548 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BFT46 BFR31 BFR30 PMBFJ308 PMBFJ309 PMBFJ310 PMBF4391 PMBF4392 PMBF4393 BSR56
Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Microwave Microwave Broadcast Broadcast Varicap Varicap Varicap Broadcast WB trs 5-7 Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET
SST4857 SST4859 SST4860 SST4861 ST704 ST744 ST744 SVC201SPA SXA-389B SXA-389B TAN150 TAN250A TAN300 TBB1016 TCS450 TCS800 TMF3201J TMF3202Z TMPF4091 TMPF4092 TMPF4093 TMPF4391 TMPF4392 TMPF4393 TMPFB246A TMPFB246B TMPFB246C TMPFJ111 TMPFJ112 TMPFJ113 TMPFJ174 TMPFJ175 TMPFJ176 TMPFJ177 TPR400 TPR500 TPR500A TSDF54040 TSDF54040-GS08 TSDF54040X-GS08 TSDF54040XR-GS08 UF2805B UF28100H UF28100M UF28100V UF2810P UF28150J UF2815B UF2820P UF2820R UF2840G UF2840P UMIL100 UMIL100A UMIL60 UMIL80 uPC2709 uPC2711 uPC2712 uPC2745 uPC2746 uPC2748 uPC2771 uPC8112 UTV200 UTV8100B VAM80 VMIL100 VRF148A VRF150 VRF151 VRF151G
Standard Standard Standard Standard POLYFET POLYFET POLYFET Sanyo RFMD RFMD Microsemi Microsemi Microsemi Renesas Microsemi Microsemi AUK AUK Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Microsemi Microsemi Microsemi Vishay Vishay Vishay Vishay M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Microsemi Microsemi Microsemi Microsemi NEC NEC NEC NEC NEC NEC NEC NEC Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
BSR57 BSR56 BSR57 BSR58 BLF346 BLF276 BLF277 BB187 BGA7124 BGA7024 BLF177 BLA6G1011-200R BLA6G1011-200R BF1204 BLA6H0912-500 BLA6H1011-600 BF1204 BF1202WR PMBF4391 PMBF4392 PMBF4393 PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR58 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BLAH0912-500 BLA6H0912-501 BLA6H0912-502 BF1102 BF1102 BF1102 BF1102R BLF871 BLF871 BLF871 BLF871 BLF871 BLF881 BLF871 BLF871 BLF871 BLF881 BLF881 BLF871 BLF871 BLF878 BLF878 BGA2709 BGA2711 BGA2712 BGA2001 BGA2001 BGA2748 BGA2771 BGA2022 BLF571 BLF645 BLF878 BLF645 BLF881 BLF177 BLF177 BLF878
FET FET FET FET Broadcast Broadcast Broadcast Varicap MMIC MMIC Broadcast Microwave Microwave FET Microwave Microwave FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET Microwave Microwave Microwave FET FET FET FET Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast
5.2
Cross-references: NXP discontinued types versus NXP replacement types
In alphabetical order of manufacturer discontinued type Abbreviations: BS diode Band switch diode CATV Community antenna television system FET Field effect transistor Varicap Varicap diode WB trs Wideband transistor RFP trs RF Power transistor
NXP discontinued type BA277-01 BA792 BAP142L BAP51-01 BAP51L BAP55L BB132 BB145 BB145B-01 BB151 BB157 BB178L BB179BL BB179L BB181L BB182B BB182L BB187L BB190 BB202L BB804 BBY42 BF1203 BF689K BF763 BF851A BF851C BF992/01 BFC505 BFC520 BFET505 BFET520 BFG17A BFG197 BFG197/X BFG25AW/XR BFG410W/CA BFG425W/CA BFG505/XR BFG505W/XR BFG520W/XR BFG590/XR BFG590W BFG590W/XR BFG67/XR BFG92A BFG92A/XR BFG93A/XR BFQ34/01 BFR92 BFR92AR BFR92AT BFR93 BFR93AT BFR93R BFU510 BFU540
Product family NXP BS diode BS diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET WB trs WB trs FET FET FET WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs
Replacement type NXP BA277 BA591 BAP142LX BAP51LX BAP51LX BAP55LX BB152 BB145B BB145B BB135 BB187 BB178LX BB179BLX BB179LX BB181LX BB182 BB182LX BB187LX BB149 BB202LX BB207 BBY40 BF1203 BFS17 BFS17 BF861A BF861C BF992 BFM505 BFM520 BFM505 BFM520 BFS17A BFG198 BFG198 BFG25AW/X BFG410W BFG425W BFG505/X BFG505 BFG520W/X BFG590/X BFG590 BFG590 BFG67 BFG92A/X BFG92A/X BFG93A/X BFG35 BFR92A BFR92A BFR92AW BFR92A BFR93AW BFR93A BFU725F/N1 BFU725F/N1
NXP discontinued type BFU725F BGA2031 BGD102/02 BGD102/04 BGD104 BGD104/04 BGD502/01 BGD502/03 BGD502/05 BGD502/07 BGD502/6M BGD502/C7 BGD502/R BGD504 BGD504/01 BGD504/02 BGD504/09 BGD602 BGD602/02 BGD602/07 BGD602/09 BGD602/14 BGD602D BGD702D BGD702D/08 BGD704/01 BGD704/07S BGD704/S9 BGD704N BGD802/09 BGD802N BGD802N/07 BGD804N BGD804N/02 BGD902 BGD902/07 BGD902L BGD904 BGD904/02 BGD904/07 BGD904L BGD906 BGE788 BGE847BO BGE847BO/FC BGE847BO/FC0 BGE847BO/FC0 BGE847BO/FC1 BGE847BO/SC BGE847BO/SC0 BGE887BO BGE887BO/FC BGE887BO/FC1 BGE887BO/SC BGO807 BGO847/01 BGO847/01
Product family NXP WB trs WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV
Replacement type NXP BFU725F/N1 BGA2031/1 BGD502 BGD502 BGD704 BGD704 BGD502 BGD502 BGD502 BGD502 BGD702 BGD502 BGD502 BGD704 BGD704 BGD704 BGD704 BGD702 BGD702 BGD702 BGD702 BGD702 BGD712 BGD712 BGD712 BGD704 BGD704 BGD704 BGD714 BGD802 BGD812 BGD812 BGD814 BGD814 BGD812 BGD902 BGD812 BGD814 BGD904 BGD904 BGD814 CGD942C BGE788C BGO827 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO807C BGO847 BGO847
109
NXP discontinued type BGO847/FC0 BGO847/FC01 BGO847/SC0 BGQ34/01 BGU2003 BGX885/02 BGY1085A/07 BGY584A BGY585A/01 BGY586 BGY586/05 BGY587/01 BGY587/02 BGY587/07 BGY587/09 BGY587B/01 BGY587B/02 BGY587B/09 BGY588 BGY588/04 BGY66B/04 BGY67/04 BGY67/09 BGY67/14 BGY67/19 BGY67A/04 BGY67A/14 BGY68/01 BGY685A/07 BGY685AD BGY685AL BGY687/07 BGY687/14 BGY687B BGY687B/02 BGY785A/07 BGY785A/09 BGY785AD BGY785AD/06 BGY785AD/8M BGY785AD/8M BGY787/02 BGY787/07 BGY787/09 BGY847BO BGY847BO/SC BGY84A BGY84A/04 BGY84A/05 BGY85 BGY85A BGY85A/04 BGY85A/05 BGY85H/01 BGY86 BGY86/05 BGY87 BGY87/J1 BGY87B BGY88 BGY88/04 BGY88/04 BGY88/07 BGY887/02 BGY887BO BGY887BO/FC BGY887BO/SC BLC6G22-100 BLF1822-10 BLF2043 BLF2045 BLF4G08LS-160A BLF4G08LS-160A BLS2731-110T BLS2731-110 BLS2731-20
Product family NXP CATV CATV CATV WB trs WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs
Replacement type NXP BGO827/SC0 BGO827/SC0 BGO827/SC0 BFG35 BGA2003 BGX885N BGY1085A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587B BGY587B BGY587B BGY588N BGY588N BGY66B BGY67 BGY67 BGY67 BGY67 BGY67A BGY67A BGY68 BGY685A BGY785A BGY785A BGY687 BGY687 BGE787B BGE787B BGY785A BGY785A BGY785A BGY785A BGY885A BGY885A BGY787 BGY787 BGY787 BGO827 BGO827/SC0 BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587B BGY588N BGY588N BGY588N BGY588N BGY887 BGO827 BGO827/FC0 BGO827/SC0 BLF6G22-100 BLF6G21-10G BLF6G21-10G BLF6G20-45BLF6G22-45 BLF6G10LS-160RN BLF6G10LS-160RN BLS6G2731-120 BLS6G2731-120 BLS6G2731-6G
NXP discontinued type BLS2731-50 BLF3G22-30 CGD914 CGY887A CGY887B GD923 OM7650 OM7670 ON4520/09 ON4520/2 ON4594/M5 ON4749 ON4831-2 ON4869 ON4876 ON4890 ON4990 PMBT3640/AT PN4392 PN4393 TFF1004HN
Product family NXP RFP trs RFP trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV WB trs FET FET Satellite IC
Replacement type NXP BLS6G2731-6G BLF6G22-45 CGD1042H CGY1043 CGY1047 CGD942C BGY588C BGE788C BGY687 BGY687 BGY585A BGY588N BGY885A BGY587 BGY1085A BGD712 BGD885 BFS17 PMBF4392 PMBF4393 TFF1014HN
110
6. Packing and packaging information

6.1 Packing quantities per package with relevant ordering code
Package SOD323/SC-76 Package dimensions L x W x H (mm) 1.7 x 1.25 x 0.9 Packing quantity 3,000 10,000 3,000 10,000 8,000 20,000 15000 3,000 10,000 5,000 5,000 10,000 10,000 1,000 4,000 100 20 3,000 10,000 1,000 4,000 1,500 96 480 3,000 10,000 1,000 658 3,000 10,000 3,000 2,500 3,000 10,000 3,000 10,000 2,000 360 2,500 3,000 60 20 60 20 60 300 Product 12NC ending 115 135 115 135 315 335 315 215 235 112 412 116 126 115 135 112 112 215 235 115 135 518 551 557 115 135 118 112 115 135 115 118 115 135 115 135 118 151 118 115 112 112 112 112 112 135 Packing method 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 2 mm pitch tape and reel 2 mm pitch tape and reel reel 8 mm tape and reel 8 mm tape and reel bulk, delta pinning bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch 12 mm tape and reel 12 mm tape and reel 4 tray/box blister, tray 8 mm tape and reel 8 mm tape and reel 12 mm tape and reel 12 mm tape and reel 13" tape and reel dry pack 1 tray dry pack 5 tray dry pack 8 mm tape and reel 8 mm tape and reel 13'' tape and reel tube 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 16 mm tape and reel 8 mm tape and reel 8 mm tape and reel reel 13" tape and reel 1 tray 12 mm tape and reel 8 mm tape and reel blister, tray blister, tray blister, tray blister, tray blister, tray reel NXP Semiconductors RF Manual 15th edition 111
SOD523/SC-79
1.2 x 0.8 x 0.6
SOD882D SOT23
1.0x0.6x0.4 2.9 x 1.3 x 0.9
SOT54
4.6 x 3.9 x 5.1
SOT89/SC-62 SOT115 SOT121B SOT143(N/R) SOT223/SC-73
4.5 x 2.5 x 1.5 44.5 x 13.65 x 20.4 28.45 x 28.45 x 7.27 2.9 x 1.3 x 0.9 6.7 x 3.5 x 1.6
SOT307
10 x 10 x 1.75
SOT323/SC-70 SOT341 SOT343(N/R) SOT343F SOT360 SOT363/SC-88 SOT363 SOT401 SOT403 SOT416/SC-75 SOT467B SOT467C SOT502A
2.0 x 1.25 x 0.9 5.3 x 10.2 2.0 x 1.25 x 0.9 2.1 x 1.25 x 0.7 6.5 x 4.4 x 0.9 2.0 x 1.25 x 0.9 2.1 x 2.0 x 0.9 5 x 5 x 1.4 5.0 x 4.4 x 0.9 1.6 x 0.8 x 0.75 9.78 x 18.29 x 4.67 20.45 x 18.54 x 4.67 19.8 x 9.4 x 4.1
Packing and packaging information
Package SOT502B SOT538A SOT539A SOT540A SOT608A
Package dimensions L x W x H (mm) 19.8 x 9.4 x 4.1 5.1 x 4.1 x 2.6 31.25 x 9.4 x 4.65 21.85 x 10.2 x 5.4 10.1 x 10.1 x 4.2
Packing quantity 60 100 160 60 300 60 60 60 300 60 100 300 6,000 1,500 100 6,000 4,000 1,000 490 2,450 1,000 90 450 6000 4,000 1,000 260 260 1,300 2,500 3,000 3,000 6,000 490 4,000 180 180 5000 5000 6000 60 180 100 180 100 60 60 100 60
Product 12NC ending 112 118 112 112 135 112 112 112 135 112 118 135 118 115 551 118 118 515 551 157 518 551 557 118 115 518 151 551 157 118 125 115 135 551 518 127 127 115 132 118 112 112 118 112 118 112 112 118 112
Packing method blister, tray reel blister, tray blister, tray reel blister, tray blister, tray blister, tray reel blister, tray reel reel 12 mm tape and reel 8 mm tape and reel tray Tape and reel 13" tape and reel 7" tape and reel dry pack 1 tray dry pack 5 tray 13" tape and reel dry pack 1 tray dry pack 5 tray dry pack reel 8 mm tape and reel 13" tape and reel dry pack 1 tray 1 tray dry pack 5 tray dry pack 16 mm tape and reel 8 mm tape and reel reel tray multiple trays tube tube 8 mm tape and reel 8 mm tape and reel 12 mm tape and reel blister, tray blister, tray Tape and reel blister, tray Tape and reel blister, tray blister, tray reel blister, tray
SOT608B
10.1 x 10.1 x 4.2
SOT616 SOT617
4.0 x 4.0 x 0.85 5 x 5 x 0.85
SOT618
6 x 6 x 0.85
SOT638 SOT650-1 SOT666
14 x 14 x 1 3.0 x 3.0 x 0.85 1.6 x 1.2 x 0.7
SOT684
8 x 8 x 0.85
SOT724 SOT753 SOT763-1 SOT778 SOT822-1 SOT834-1 SOT886 SOT891 SOT908 SOT922-1 SOT975B SOT975C SOT979A SOT1110A SOT1110B
8.7 x 3.9 x 1.47 2.9 x 1.5 x 1.0 2.5x3.5x0.85 6.0 x 6.0 x 0.85 15.9 x 11 x 3.6 15.9 x 11 x 3.15 1.45 x 1.0 x 0.5 1.0 x 1.0 x 0.5 3.0 x 3.0 x 0.85 17.4 x 9.4 x 3.88 6.5 x 6.5 x 3.3 6.5 x 6.5 x 3.3 31.25 x 10.2 x 5.3 41.28 x 17.12 x 5.36 41.15 x 36.32 x 4.68
112
Package SOT1112A SOT1112B SOT1120A SOT1120B
Package dimensions L x W x H (mm) 16.65 x 20.32 x 4.205 16.65 x 15.22 x 4.205 9.4 x 19.815 x 4.1 9.4 x 19.815 x 4.1
Packing quantity 60 100 60 100 60 100 60 100 60 100 60 100 DEV 60 60 60 100 60 100 60 100 DEV DEV 1000 DEV DEV DEV DEV DEV DEV DEV
Product 12NC ending 112 118 112 118 112 118 112 118 112 118 112 118 DEV 112 112 112 118 112 118 112 118 DEV DEV 115 DEV DEV DEV DEV DEV DEV DEV
Packing method blister, tray reel blister, tray reel blister, tray reel blister, tray reel blister, tray reel blister,tray reel DEV blister, tray blister, tray blister, tray reel blister, tray reel blister, tray reel DEV DEV reel DEV DEV DEV DEV DEV DEV DEV
SOT1121A SOT1121B SOT1121C SOT1130A SOT1130B SOT1135A SOT1135B SOT1135C SOT1138 SOT1179 SOT1198-1 SOT1204 SOT1240B SOT1240C SOT1242B SOT1242C SOT1244B SOT1244C
34.16 x 19.94 x 4.75 20.70 x 19.94 x 4.75 13.4 x 20.575 x 3.785 20.45 x 17.12 x 4.65 9.91 x 17.12 x 4.65 20.45 x 19.94 x 4.65 16.65 x 9.78 x 4.205 16.65 x 9.78 x 4.205 19.48 x 20.57 x 3.9 4.0 x 6.0 x 0.85 10.0 x 5.5 x 0.8 13.2 x 20.57 x 3.9 21.60 x 20.575 x 3.875 18.00 x 20.575 x 3.875 22.60 x 32.45 x 4.455 18.00 x 32.45 x 4.455 19.43 x 20.575 x 3.875 18.00 x 20.575 x 3.875
113
6.2
Marking codes list
Search online on marking code: http://www.nxp.com/package/ In alphabetical order of marking code In case a % is given in the marking code, it means this type can be assembled at different assembly sites. p = made in Hong-Kong t = made in Malaysia W = made in China
Marking code 10% 13% 20% 21% 22% 24% 25% 26% 28% 29% 30% 31% 32% 33% 34% 38% 39% 40% 41% 42% 47% 48% 49% 50% 1 2 7 8 9 %1W %3A %4A %5A %6G %6J %6K %6K %6L %6S %6W %6X %6Y %AB %E7 %E8 %E9 %EA %EB %EC %ED %M1 %M2 %M3 %M4 %M5 %M6 %M7 %M8 %M9 Type BAT18 BB207 BF545A BF545B BF545C BF556A BF556B BF556C BF861A BF861B BF861C BFR505 BFR520 BFR540 BFT25A PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ308 PMBFJ309 PMBFJ310 BA277 BB182 BA891 BB178 BB179 BAP51-05W BGA6289 BGA6489 BGA6589 PMBF4393 PMBF4391 BGA7024 PMBF4392 BGA7027 PMBFJ176 PMBFJ175 PMBFJ174 PMBFJ177 BF1210 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BF908 BF908R BF909 BF909R BF909A BF909AR BF904A BF904AR BSS83 Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOD523 SOD523 SOD523 SOD523 SOD523 SOT323 SOT89 SOT89 SOT89 SOT23 SOT23 SOT89 SOT23 SOT89 SOT23 SOT23 SOT23 SOT23 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 Marking code %MA %MB %MC %MD %ME %MF %MG %MH %MK %ML %MM %MN %MP %MR %MS %MT %MU %MV %MW %MX %MY %MZ %VA %VB 1B% 1C% 1N% 2A% 2L 2N 2R 4A 4K% 4L% 4W% 5K% 5W% 6F% 6K% 6W% 7K% 8K% A1 A1 A1 A1 A2 A2 A2 A2 A2% A3 A3 A3 A3% A5 A5% A6% A7% Type BF991 BF992 BF904 BF904R BFG505 BFG520 BFG540 BFG590 BFG505/X BFG520/X BFG540/X BFG590/X BFG520/XR BFG540/XR BFG10 BFG10/X BFG25A/X BFG67/X BFG92A/X BFG93A/X BF1100 BF1100R BGU7041 BGU7042 BGA2717 BAP50-05 BAP70-04W BF862 BF1208 BF1206F BF1207F BF1208D BAP64-04 BAP50-04 BAP64-04W BAP64-05 BAP64-05W BAP1321-04 BAP64-06 BAP50-04W BAP65-05 BAP70-05 BA591 BB208-02 BGA2001 BAP64Q BAP70Q BAT18 BB184 BB208-03 BGA2022 BAP64-03 BB198 BGA2003 BGA2031/1 BAP51-03 BGA2011 BGA2012 BFG310W/XR Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT363 SOT363 SOT23 SOT323 SOT23 SOT666 SOT666 SOT666 SOT666 SOT23 SOT23 SOT323 SOT23 SOT323 SOT23 SOT23 SOT323 SOT23 SOT23 SOD323 SOD523 SOT343 SOT753 SOT753 SOT23 SOD523 SOD323 SOT363 SOD323 SOD523 SOT343 SOT363 SOD323 SOT363 SOT363 SOT343 Marking code A8 A8% A8% A9 AC B3 B6B6 B6% B7% BC% BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 C1% C2% C4% C5% D1 D2 D2 D3 D3 D4 D4% D5 D6 D7 D8 E1% E1% E1% E2% E2% E3% E6% FB FF FG G2 G2% G3% G4% G5% K1 K2 K4 K5 K6 K7 Type BAP50-03 BFG325W/XR PMBFJ620 BAP70-03 BGU7005 BGU7003 BGA2715 BGU7007 BFU725F BGA2716 BFQ591 BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 BGM1011 BGM1012 BGM1013 BGM1014 BFU610F BFU630F BAP63-03 BFU660F BAP65-03 BFU690F BFR30/B BFU710F BFU730F BFU760F BFU790F BFS17 BFS17/FD BFS17W BFS17A BGA2712 BGA2709 BFG17A BFQ19 BFQ18A BFQ149 BA278 BGA2711 BGA2748 BGA2771 BGA2776 BAP51-02 BAP51-05W BAP50-02 BAP63-02 BAP65-02 BAP1321-02 Package SOD323 SOT343 SOT363 SOD323 SOT886 SOT891 SOT363 SOT886 SOT343F SOT363 SOT89 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT363 SOT363 SOT363 SOT363 SOT343F SOT343F SOD323 SOT343F SOD323 SOT343F SOT23 SOT343F SOT343F SOT343F SOT343F SOT23 SOT23 SOT323 SOT23 SOT363 SOT363 SOT23 SOT89 SOT89 SOT89 SOD523 SOT363 SOT363 SOT363 SOT363 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523
114
Marking code K8 K9 L1 L2 L2 L2% L3 L3% L4 L4% L5 L6 L6% L7 L8 L9% LA LA% LB% LD% LE LE% LF% LG% LH% LK% M08 M09 M1% M10 M2% M2% M3% M33 M34 M35 M4% M5% M6% M65 M66 M67 M7% M84 M85 M86 MA% MB MB% MC MC% MD MD% ME MF MG MG% MH MH% MK ML MO% MO% N N0 N0% N0% N1 N2 N2% N2% N3 N4 N4 N4% N6% N7
Type BAP70-02 BB199 BB202LX BAP51LX BB202 BF1203 BB178LX BF1204 BB179LX BF1205 BB179BLX BB181LX BF1206 BB182LX BB187LX BF1208 BF1201WR BF1201 BF1201R BF1202 BF1202WR BF1202R BF1211 BF1212 BF1211R BF1212R PMBFJ308 PMBFJ309 BFR30 PMBFJ310 BF1207 BFR31 BFT46 BF861A BF861B BF861C BF1215 BF1216 BF1205C BF545A BF545B BF545C BF1218 BF556A BF556B BF556C BGA2802 BF998WR BGA2803 BF904WR BGA2851 BF908WR BGA2869 BF909WR BF1100WR BF909AWR BF994S BF904AWR BF996S BF1211WR BF1212WR BF998 BF998R BB181 BFR505T BFM505 BFS505 BFG505W/X BFR520T BFM520 BFS520 BFG520W BFG520W/X BFQ540 BFS540 BFS25A BFG540W/X
Package SOD523 SOD523 SOD882D SOD882D SOD523 SOT363 SOD882D SOT363 SOD882D SOT363 SOD882D SOD882D SOT363 SOD882D SOD882D SOT363 SOT343 SOT143 SOT143 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT363 SOT363 SOT23 SOT23 SOT23 SOT363 SOT23 SOT23 SOT23 SOT363 SOT343 SOT363 SOT343 SOT363 SOT343 SOT363 SOT343 SOT343 SOT343 SOT143 SOT343 SOT143 SOT343 SOT343 SOT143 SOT143 SOD523 SOT416 SOT363 SOT323 SOT343 SOT416 SOT363 SOT323 SOT343 SOT343 SOT89 SOT323 SOT323 SOT343
Marking code N8 N9 N9% NA NA% NB NB% NC NC% ND ND% NE NE% NF% NG% NH% P08 P09 P1 P1 P10 P11 P12 P13 P2% P2% P3 P4 P5 P5 P6 P7 P8 P9 PB PC PE PF PL R2% R2% R5 R7% R8% S S1% S2% S2% S3% S6% S7% S8% S9% SB% SC% SC% SD% SE% T5 UY V1 V1% V10 V2% V2% V3% V4% V6% V8 VA VA VB VC VC VC% VD% VD%
Type BFG540W/XR BFG540W BAP70AM BF1105WR BF1105R BF1109WR BF1109R BF1101WR BF1101R BFG424W BF1101 BFG424F BF1105 BF1109 BF1108 BF1108R PMBFJ108 PMBFJ109 BFG21W BB131 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 BFR92A BFR92AW BFG403W BFG410W BB135 BFG425W BFG480W BB147 BB148 BB149 BB152 BB153 BB155 BB156 BB149A BFR93A BFR93AW BFR93AR BFR106 BFG93A BAP64-02 BFG310/XR BBY40 BFG325/XR BF1107 BF510 BF511 BF512 BF513 BF1214 BGU7031 BB201 BGU7032 BGU7033 BFG10W/X BGU7004 BFG25AW/X BFT25 BFT25A BFQ67 BFQ67W BFG67 BAP64-06W BAP65-05W BAP1321-03 BF1217WR BF1217WR BF1118W BF1118WR BF1118WR BF1118 BF1118R BF1118R
Package SOT343 SOT343 SOT363 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT343 SOD323 SOT23 SOT23 SOT23 SOT23 SOT23 SOT323 SOT343 SOT343 SOD323 SOT343 SOT343 SOD523 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOT23 SOT323 SOT23 SOT23 SOT143 SOD523 SOT143 SOT23 SOT143 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT363 SOT23 SOT363 SOT363 SOT343 SOT886 SOT343 SOT23 SOT23 SOT23 SOT323 SOT143 SOT323 SOT323 SOD323 SOT343 SOT343R SOT343 SOT343 SOT343R SOT143 SOT143 SOT143R
Marking code W1 W1% W1% W2% W4% W6% W7% W9% X X1% X1%
Type BF1102 BFT92 BFT92W BF1102R BAP50-05W BAP51-04W BAP51-06W BAP63-05W BB187 BFT93 BFT93W
Package SOT363 SOT23 SOT323 SOT363 SOT323 SOT323 SOT323 SOT323 SOD523 SOT23 SOT323
115
7. Abbreviations
3-way AM ASIC ASYM BPF BUC CATV CDMA CMMB CMOS CQS DAB DECT DiSEqC DSB DVB EDGE ESD FET FM GaAs GaN Gen GPS GSM HBT HDTV HF HFC HFET HPA HVQFN IF ISM LDMOS LNA LNB LO LPF MESFET MMIC MMPP
Doherty design using 3 discrete transistors Amplitude Modulation Application Specific Integrated Circuit Asymmetrical design of Doherty (main and peak device are different) Band Pass Filter Block Upconverter Community Antenna Television Code Division Multiple Access Chinese Multimedia Mobile Broadcasting Complementary Metal Oxide Semiconductor Customer Qualification Samples Digital Audio Broadcasting Digital Enhanced Cordless Telecommunications Digital Satellite Equipment Control Digital Signal Processor Digital Video Broadcasting Enhanced Data Rates for GSM Evolution Electro Static Device Field Effect Transistor Frequency Modulation Gallium Arsenide Gallium Nitride Generation Global Positioning System Global System for Mobile communications Heterojunction Bipolar Transistor High Definition Television High Frequency (3-30 MHz) Hybrid Fiber Coax Heterostructure Field Effect Transistor High Power Amplifier Plastic thermally enHanced Very thin Quad Flat pack No leads Intermediate Frequency Industrial, Scientific, Medical - reserved frequency bands Laterally Diffused Metal-Oxide-Semiconductor Low Noise Amplifier Low Noise Block Local Oscillator Low Pass Filter Metal Semiconductor Field Effect Transistor Monolithic Microwave Integrated Circuit Main and peak devices realized separately in halves of push-pull transistor
MPPM
Main and peak device realized in same pushpull transistor (2 times) MoCA Multimedia over Coax Alliance MOSFET MetalOxideSemiconductor Field Effect Transistor MPA Medium Power Amplifier MRI Magnetic Resonance Imaging NF Noise Figure NIM Network Interface Module NMR Nuclear Magnetic Resonance PA Power Amplifier PAR Peak to Average Ratio PEP Peak Envelope Power pHEMT pseudomorphic High Electron Mobility Transistor PLL Phase Locked Loop QUBiC Quality BiCMOS RF Radio Frequency RFS Release for Supply RoHS Restriction of Hazardous Substances Rx Receive SARFT State Administration for Radio, Film and Television SER Serializer SiGe:C Sillicon Germanium Carbon SMATV Satellite Master Antenna Television SMD Surface Mounted Device SPDT Single Pole, Double Throw SYM Symmetrical design of Doherty (main and peak device are the same type of transistor) TD-SCDMA Time Division-Synchronous Code Division Multiple Access TCAS Traffic Collision Avoidance Systems TMA Tower Mounted Amplifier TTFF Time to First Fix Tx Transmit UHF Ultra High Frequency (470-860 MHz) UMTS Universal Mobile Telecommunications System VCO Voltage Controlled Oscillator VGA Variable Gain Amplifier VHF Very High Frequency (30-300 MHz) VoIP Voice over Internet Protocol VSAT Very Small Aperture Terminal WCDMA Wideband Code Division Multiple Access WiMAX Worldwide Interoperability for Microwave Access WLAN Wireless Local Area Network
Abbreviations
116
8. Contacts and web links

How to contact your authorized distributor or local NXP representative.
Authorized distributors Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific_dist Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe_dist North America: http://www.nxp.com/profile/sales/northamerica_dist
NXP RF power & base stations: http://www.nxp.com/rfpower NXP RF FETs: http://www.nxp.com/rffets NXP RF CATV electrical & optical: http://www.nxp.com/catv NXP RF applications: http://www.nxp.com/rf NXP application notes: http://www.nxp.com/all_appnotes NXP cross-references: http://www.nxp.com/products/xref NXP packaging: http://www.nxp.com/package NXP end-of-life: http://www.nxp.com/products/eol NXP quality handbook: http://www.standardics.nxp.com/quality/handbook NXP literature: http://www.nxp.com/products/discretes/documentation NXP packaging: http://www.nxp.com/package NXP sales offices and distributors: http://www.nxp.com/profile/sales NXP high-speed converters http://www.nxp.com/dataconverters
Contacts and web links
Local NXP Offices Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe North America: http://www.nxp.com/profile/sales/northamerica
Web links NXP Semiconductors: http://www.nxp.com NXP RF Manual web page: http://www.nxp.com/rfmanual NXP varicaps: http://www.nxp.com/varicaps NXP RF PIN diodes: http://www.nxp.com/pindiodes NXP RF schottky diodes: http://www.nxp.com/rfschottkydiodes NXP RF MMICs: http://www.nxp.com/mmics NXP RF wideband transistors: http://www.nxp.com/rftransistors
9. Product index
Type 1PS10SB82 1PS66SB17 1PS66SB82 1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 1PS76SB17 1PS79SB17 1PS88SB82 ADC0801S040 ADC0804S series ADC0808S series ADC1002S020 ADC1003S series ADC1004S series ADC1005S060 ADC1006S series ADC1010S series ADC1015S series ADC1112D125 ADC1113D125 ADC1113S125 ADC1115S125 ADC1206S series ADC1207S080 ADC1210S series ADC1212D series ADC1213D series ADC1213S series ADC1215S series ADC1410S series ADC1412D series ADC1413D series ADC1413S series ADC1415S series ADC1610S series ADC1613D series ADC1613S series BA277 BA591 BA891 BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX BAP50-02 BAP50-03 BAP50-04 BAP50-04W BAP50-05 BAP50-05W BAP50LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W BAP51LX BAP55LX BAP63-02 BAP63-03 BAP63-05W BAP63LX BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W 118 Portfolio chapter 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.2.3 3.2.3 3.2.3 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 Type BAP64-06 BAP64-06W BAP64LX BAP64Q BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP65LX BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP70AM BAP70Q BAT17 BAT18 BB131 BB135 BB145B BB148 BB149 BB149A BB152 BB153 BB156 BB178 BB178LX BB179 BB179B BB179BLX BB179LX BB181 BB181LX BB182 BB182LX BB184 BB187 BB187LX BB189 BB198 BB199 BB201 BB202 BB202LX BB207 BB208-02 BB208-03 BBY40 BF1100 BF1100R BF1100WR BF1101 BF1101R BF1101WR BF1102(R) BF1105 BF1105R BF1105WR BF1107 BF1108 BF1108R BF1108W BF1108WR BF1109 BF1109R BF1109WR BF1118 BF1118R BF1118W BF1118WR Portfolio chapter 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.4 3.2.3 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 Type BF1201 BF1201R BF1201WR BF1202 BF1202R BF1202WR BF1203 BF1204 BF1205 BF1205C BF1206 BF1206F BF1207 BF1208 BF1208D BF1210 BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF1214 BF1215 BF1216 BF1217 BF1218 BF245A BF245B BF245C BF510 BF511 BF512 BF513 BF545A BF545B BF545C BF556A BF556B BF556C BF861A BF861B BF861C BF862 BF904A BF904AR BF904AWR BF908 BF908R BF908WR BF909A BF909AR BF909AWR BF991 BF992 BF994S BF996S BF998 BF998R BF998WR BFG10 BFG10/X BFG10W/X BFG135 BFG198 BFG21W BFG25A/X BFG25AW BFG25AW/X BFG31 BFG310/XR Portfolio chapter 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 Type BFG310W/XR BFG325/XR BFG325W/XR BFG35 BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505 BFG505/X BFG505W BFG505W/X BFG505W/XR BFG520 BFG520/X BFG520/XR BFG520W BFG520W/X BFG540 BFG540/X BFG540/XR BFG540W BFG540W/X BFG540W/XR BFG541 BFG590 BFG590/X BFG591 BFG67 BFG67/X BFG92A/X BFG93A BFG93A/X BFG94 BFG97 BFM505 BFM520 BFQ149 BFQ18A BFQ19 BFQ540 BFQ591 BFQ67 BFQ67W BFR106 BFR30 BFR31 BFR505 BFR505T BFR520 BFR520T BFR540 BFR92A BFR92AW BFR93A BFR93AR BFR93AW BFR94A BFR94AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25 BFT25A BFT46 Portfolio chapter 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.5.1 3.5.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.5.1
Abbreviations
Type BFT92 BFT92W BFT93 BFT93W BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGA2001 BGA2002 BGA2003 BGA2011 BGA2012 BGA2022 BGA2031/1 BGA2709 BGA2711 BGA2712 BGA2714 BGA2715 BGA2716 BGA2717 BGA2748 BGA2771 BGA2776 BGA2800 BGA2801 BGA2802 BGA2803 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGA2870 BGA6289 BGA6489 BGA6589 BGA7024 BGA7027 BGA7124 BGA7127 BGA7130 BGA7202 BGA7204 BGA7350 BGA7351 BGD502 BGD702 BGD702N BGD704 BGD712 BGD712C BGD714 BGD802 BGD804 BGD812 BGD814 BGD816L BGD885 BGE787B BGE788C BGE885 BGM1011 BGM1012 BGM1013
Portfolio chapter 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.1 3.6.1 3.6.1 3.4.1 3.4.1 3.4.1
Type BGM1014 BGO807 BGO807C BGO807CE BGO827 BGR269 BGU7003 BGU7003W BGU7004 BGU7005 BGU7007 BGU7008 BGU7031 BGU7032 BGU7033 BGU7041 BGU7042 BGU7051 BGU7052 BGU7053 BGX7100 BGX7220 BGX7221 BGX7300 BGX885N BGY1085A BGY585A BGY587 BGY587B BGY588C BGY588N BGY66B BGY67 BGY67A BGY68 BGY685A BGY687 BGY785A BGY787 BGY835C BGY883 BGY885A BGY887 BGY887B BGY888 BLA6G1011-200R(G) BLA6G1011LS-200RG BLA6H0912-1000 BLA6H0912-500 BLA6H1011-600 BLD6G21L-50 BLD6G21LS-50 BLD6G22L(S)-50 BLF178P BLF2425M6L(S)180P BLF2425M6LS180P BLF2425M7L(S)140 BLF2425M7L(S)200 BLF2425M7L(S)250P BLF2425M7LS200 BLF2425M7LS250P BLF25M612 BLF278XR BLF571 BLF572P BLF573(S) BLF573P BLF574 BLF578 BLF578XR BLF642
Portfolio chapter 3.4.1 3.6.4 3.6.4 3.6.4 3.6.4 3.6.5 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.2 3.4.2 3.4.2 3.4.2 3.6.1 3.6.2 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.5 3.6.5 3.6.5 3.6.5 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.7.3.1 3.7.3.1 3.7.3.1 3.7.3.1 3.7.3.1 3.7.1.3 3.7.1.3 3.7.1.4 3.7.2.1 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1
Type BLF645 BLF647P BLF6G10-200RN BLF6G10(LS)-160RN BLF6G10(S)-45 BLF6G10L-40BRN BLF6G10L(S)-260PRN BLF6G10LS-200RN BLF6G13LS-250P BLF6G15L-250PBRN BLF6G15L-40BRN BLF6G15LS-500H BLF6G20-110 BLF6G20-180PN BLF6G20-180RN BLF6G20-230PRN BLF6G20-40 BLF6G20-45 BLF6G20-75 BLF6G20LS-110 BLF6G20LS-140 BLF6G20LS-180RN BLF6G20LS-75 BLF6G20S-230PRN BLF6G20S-45 BLF6G21-10G BLF6G22(LS)-180PN BLF6G22(LS)-180RN BLF6G22(S)-45 BLF6G22L-40BN BLF6G22L(S)-40P BLF6G22LS-100 BLF6G22LS-40P BLF6G22LS-75 BLF6G27LS-40P BLF6G38-10(G) BLF6G38(LS)-100 BLF6G38(LS)-25 BLF6G38(LS)-50 BLF7G10LS-250 BLF7G15LS-200 BLF7G15LS-300P BLF7G20L-200 BLF7G20L-250P BLF7G20L-90P BLF7G20LS-140P BLF7G20LS-200 BLF7G20LS-250P BLF7G20LS-90P BLF7G21L(S)-160P BLF7G21LS-160P BLF7G22L(S)-130 BLF7G22L(S)-160 BLF7G22L(S)-200 BLF7G22L(S)-250P BLF7G22LS-100P BLF7G22LS-160 BLF7G24L(S)-100 BLF7G24L(S)-140 BLF7G24LS-160P BLF7G27L(S)-100 BLF7G27L(S)-140 BLF7G27L(S)-150P BLF7G27L(S)-75P BLF7G27L(S)-90P BLF7G27LS-200P BLF7G38LS-90P BLF871(S) BLF878 BLF879P BLF881(S)
Portfolio chapter 3.7.2.1 3.7.2.1 3.7.1.1 3.7.1.1 3.7.1.1 3.7.1.1 3.7.1.1 3.7.1.1 3.7.2.1 3.7.1.2 3.7.1.2 3.7.2.1 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.1 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.5 3.7.1.6 3.7.1.6 3.7.1.6 3.7.1.6 3.7.1.1 3.7.1.2 3.7.1.2 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.6 3.7.2.1 3.7.2.2 3.7.2.2 3.7.2.1
Type BLF884P BLF888 BLF888A BLF888A(S) BLF8G10LS-160 BLF8G10LS-300P BLL6G1214L-250 BLL6H0514-25 BLL6H0514L(S)-130 BLL6H1214-500 BLL6H1214L(S)-250 BLM2425M720 BLM6G10-30(G) BLM6G22-30 BLM7G22S-60PG BLP05H6100P BLP05H6500P BLP05H650P BLP09H620 BLP10H605 BLP10H610 BLP10H6120 BLP10H6300P BLP10H6xx BLP15M6100P BLP15M630 BLP15M660P BLP15M705 BLP15M710 BLP15M7150P BLP15M7xx BLP2425M8140 BLP2425M8250P BLP25M710 BLP25M74 BLP7G10S-140P(G) BLP7G10S-140PG BLP7G22-10 BLS6G2731-6G BLS6G2731(S)-120 BLS6G2731P-200 BLS6G2731S-130 BLS6G2735L(S)-30 BLS6G2735LS-30 BLS6G2933P-200 BLS6G2933S-130 BLS6G3135(S)-120 BLS6G3135(S)-20 BLS7G2729L(S)-350P BLS7G2729LS-350P BLS7G2933S-150 BLS7G3135L(S)-350P BLS7G3135LS-350P BLT50 BLT70 BLT80 BLT81 BSR56 BSR57 BSR58 BSS83 CGD1040HI CGD1042H CGD1042HI CGD1044H CGD1044HI CGD1046Hi CGD942C CGD944C CGD982HCi CGD985HCi
Portfolio chapter 3.7.2.2 3.7.2.2 3.7.2.2 3.7.2.1 3.7.1.1 3.7.1.1 3.7.3.2 3.7.3.1 3.7.3.2 3.7.3.2 3.7.3.2 3.7.2.3 3.7.1.1 3.7.1.4 3.7.1.4 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.1.1 3.7.1.1 3.7.1.4 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.3.1 3.3.1 3.3.1 3.3.1 3.5.1 3.5.1 3.5.1 3.5.2 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 119
Product index
Type CGD987HCi CGY1032 CGY1041 CGY1043 CGY1047 CGY1049 CGY888C DAC1001D125 DAC1003D160 DAC1005D series DAC1008D series DAC1201D125 DAC1203D160 DAC1205D series DAC1208D series DAC1401D125 DAC1403D160 DAC1405D series DAC1408D series J108 J109 J110 J111 J112 J113 J174 J175
Portfolio chapter 3.6.3 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.1 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1
Type J176 J177 PBR941 PBR951 PMBD353 PMBD354 PMBF4391 PMBF4392 PMBF4393 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1003HN
Portfolio chapter 3.5.1 3.5.1 3.3.1 3.3.1 3.2.4 3.2.4 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.3.1 3.3.1 3.3.1 3.4.4
Type TFF1007HN TFF1008HN TFF1014HN TFF1015HN TFF1017HN TFF1018HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11094HN TFF11096HN TFF11101HN TFF11105HN TFF11110HN TFF11115HN TFF11121HN TFF11126HN TFF11132HN TFF11139HN TFF11145HN TFF11152HN
Portfolio chapter 3.4.4 3.4.4 3.4.3 3.4.3 3.4.3 3.4.3 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4
120
Notes
121
Notes
122
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2011 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
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Date of release: May 2011 Document order number: 9397 750 17087 Printed in the Netherlands

RF Manual 15 Edition: Application and Design Manual For High Performance RF Products May 2011

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RF Manual 15 Edition: Application and Design Manual For High Performance RF Products May 2011

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RF Manual 15th edition

High Performance RF for the most demanding applications

NXPs RF Manual makes design work much easier

NXP Semiconductors RF Manual 15th edition

RF Manual web page www.nxp.com/rfmanual

NXP Semiconductors RF Manual 15th edition

1.4 Portable devices ____________________________________________________________________________________________________________________________________________________________________________________________________24

1.5 Automotive ___________________________________________________________________________________________________________________________________________________________________________________________________________ 29

Focus applications, products & technologies

New products ______________________________________________________________________________________________________________________________________________________________________________________________________70

3.2 RF diodes 3.2.1

3.2.2 PIN diodes

Wideband transistors _______________________________________________________________________________________________________________________________________________________________________________77

RF MMIC amplifiers and mixers _______________________________________________________________________________________________________________________________________________________________ 80

3.5.2 MOSFETs _________________________________________________________________________________________________________________________________________________________________________________________________ 85 3.6 RF Modules 3.6.1 87 87 CATV push-pulls

High-speed data converters _______________________________________________________________________________________________________________________________________________________________________________94

4.2 Simulation models ______________________________________________________________________________________________________________________________________________________________________________________________ 95 4.2.2 Interactive datasheet 95

RF transistors, MMIC & IC demo boards __________________________________________________________________________________________________________________________________________________96

Cross-references & replacements________________________________________________________99

Packing and packaging information_____________________________________________________ 111

NXP Semiconductors RF Manual 15th edition

Base stations (all cellular standards and frequencies)

POWER AMPLIFIER VGA Tx BPF MPA HPA Isolator

SER ADC LPF PROCESSING VGA

PPEAK (dBm) 58 57.3 58.1 58.6 58.2 47 57.2 55 50.3 51

POUT-AVG (dBm) 50 49.3 49.6 51 50 39 49.2 47.5 42.3 43

Gain (dB) 20.5 16 16 16 16 13 16 15.2 14.5 11.5

Drain Eff. (%) 47 50 42 47.6 40 38 47 44 39 32

HPA Doherty designs

Product highlight: BLF7G27L(S)-100/140

Function Discrete attenuator

Product RF diode PIN diode

Package SOT753 SOT753 Various^ Package

RF transistor LNA (low noise amplifier) MMIC

Product highlight: DAC1408D750 dual 14-bit DAC with JESD204A interface

NXP Semiconductors RF Manual 15th edition

INDOOR UNIT POWER SUPPLY PLL VCO

DIGITAL SIGNAL PROCESSOR

PLL VCO DATA INTERFACE

Recommended products Indoor unit

MPA (medium power amplifier)

Package SOT891 SOT650

NXP Semiconductors RF Manual 15th edition

Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908 Package

MPA (medium power amplifier)

Product Wideband transistor

Product RF transistor SiGe:C transistor

Type BFG424W BFG425W BFU725F/N1 BFU730F BFU760F BFU790F

Product RF transistor SiGe:C transistor

NXP BTS Tx component demonstrator board

MMIC SOT363 General purpose wideband amplifiers

Product highlight: BGA7350 MMIC variable gain amplifier

Dual DAC LPF I-DAC

Dual ADC LPF ADC DDC/ DUC Filtering

Dual VGA VGA

LNA RF SAW LNA

Rx1 LPF ADC

Clock Recovery jitter cleaner

PLL VCO LO Signal

MPA (medium power amplifier)

Product MMIC Product MMIC Product

SOT650 Package SOT617