2N5551 / MMBT5551 NPN General Purpose Amplifier: Features

2N5551 / MMBT5551 NPN General Purpose Amplifier
June 2009

Features
This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
2N5551
MMBT5551
3
TO-92
1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * TA = 25C unless otherwise noted

Symbol
VCEO VCBO VEBO IC TJ, Tstg
NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Junction and Storage Temperature
Value
160 180 6.0 600 -55 to +150
Units
V V V mA C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA=25C unless otherwise noted

Symbol
PD RJC RJA
Parameter
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max 2N5551
625 5.0 83.3 200 357
*MMBT5551
350 2.8
Units
mW mW/C C/W C/W
* Device mounted on FR-4 PCB 1.6" 1.6" 0.06."
2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev. B1 1
www.fairchildsemi.com
Electrical Characteristics
Symbol
Off Characteristics
TA = 25C unless otherwise noted
Parameter
Test Condition
Min.
160 180 6.0
Max.
Units
V V V
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage ICBO IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC = 100A, IE = 0 IE = 10uA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz VBE = 0.5V, IC = 0, f = 1.0MHz IC = 1.0 mA, VCE = 10 V, f = 1.0kHz IC = 250 uA, VCE= 5.0 V, RS=1.0 k, f=10 Hz to 15.7 kHz
50 50 50 80 80 30
nA A nA
On Characteristics 250 0.15 0.20 1.0 1.0 100 6.0 20 50 250 8.0 dB V V V V MHz pF pF
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter On Voltage
Small Signal Characteristics fT Cobo Cibo Hfe NF Current Gain Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10)
Typical Performance Characteristics
125 C 100 C
200
o
VCE=5V
VCE(SAT)- COLLECTOR-EMITTER VOLTAGE [V]
250
10
10
hFE- DC CURRENT GAIN
75 C
150
25 C
100
100 C
0.1
125 C
-40 C
50
-40 C
0.01 1
25 C
75 C
0 1 10 100 1000
10
100
IC- COLLECTOR CURRENT [mA]
Figure 1. Typical Pulsed Current Gain vs Collector Current

1.0
Figure 2. Collector-Emitter Saturation Voltage vs Collector Current

1.2
VBE(SAT)- BASE-EMITTER VOLTAGE [V]
VBE(ON)- BASE-EMITTER VOLTAGE [V]
-40 C
0.8
1.0
TA = -40 C TA = 25 C
o
25 C
0.8
0.6
125 C 100 C 75 C
o o
0.6
TA = 75 C TA = 100 C
o
0.4
0.4
TA = 125 C
0.2
0.2 1 10 100
0.0 1 10 100 1000
Figure 3. Base-Emitter Saturation Voltage vs Collector Current
Figure 4. Base-Emitter On Voltage vs Collector Current

100
I CBO- COLLE CTOR CURRENT (nA)
50 VCB = 100V
CAPACITANCE [pF]
10
10
CIB
COB
1 25
50 75 100 TA - AMBIE NT TEMP ERATURE ( C)
125
10
REVERSE BIAS VOLTAGE [V]
Figure 5. Collector Cutoff Current vs Ambient Temperature
Figure 6. Input and Output Capacitance vs Reverse Voltage
Typical Performance Characteristics (Continued)

Between Emitter-Base
260
BV CER - BREAKDOWN VOLTAGE (V)
h FE - SMALL SIGNAL CURRENT GAIN
vs Collector Current
16
FREG = 20 MHz V CE = 10V
I C = 1.0 mA
240
12
220
200
180
160 0.1
10
100
1000
RESISTANCE (k )
10 I C - COLLECTOR CURRENT (mA)
50
Figure 7. Collector- Emitter Breakdown Voltage with Resistance Between Emitter-Base

700
Figure 8. Small Signal Current Gain vs Collector Current
PD - POWER DISSIPATION (mW)
600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
SOT-23 TO-92
Figure 7. Power Dissipation vs Ambient Temperature
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH* *
Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter* FPS
F-PFS FRFET SM Global Power Resource Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR
PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock *
The Power Franchise
TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * SerDes
PDP SPM Power-SPM
UHC Ultra FRFET UniFET VCX VisualMax XS
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
2008 Fairchild Semiconductor Corporation

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