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Jiang Jize
2011/5/16
This week I fouse on a new project say, C-F, G-F measurement this measurement
is used to determine interface trapped charge density of device. The circuit model
we use is MOS-C model and the method we use to determine interface trapped charge
density is called conductance method.
Interface trapped charge: these are positive or negative charges, due to structural
defects, oxidation-induced defects caused by radiation or similar bond-breaking
processes interface. Interface trapped charge is in electrical communication with the
underlying silicon, interface traps can be charged or discharged, depending on the
surface potential.
MOS-C model: stands for metal-oxide-semiconductor capacitor. The structure of
this model is shown in Figure 1. And the equivalent circuit of this model is shown in
Figure 2.
For most cases the traps are continuously distributed in band gap, so let me use
continuously model introduce how I get from measured . First set
From the equation we can say, when , y gets its maximum value, that
means
In order to solve this equation I use excel help me do the calculation, column A
stands for , column B stands for corresponding value and column C stands
for corresponding value. ( )
Figure 3. Excel sheet used to find where the peak value is.
From the excel sheet it is not difficult to find that occurs when , in
other words, occurs when .and at maximum we have .
Therefore, .
Another important part of this project is to study relationship between trap state
energy and traps density.
Trap state energy is an important parameter to determine time constant of traps,
say,
Here, stands for capture cross section of the trap states, stands for
density of states in the conduction band and stands for average thermal velocity
of the carriers. stands for trap state energy, k is Boltzmann’s constant and T is
temperature in Kelvin
Therefore the steps to determine relationship between trap state energy and traps
density are:
1. Find the maximum Gp/ and determine time constant .
2. Use to calculate trap state energy .
3. Find corresponding traps density .
4. Plot vs .
Based on this basic knowledge, we start to do the measurement and at the same
time I also write a new program use VBA to extract and analysis the measured data.
Our measurement is done on the diode structure, shown in Figure 4.
This structure helps us achieve the MOS-C model because Schokkty contact here act
as metal, Ohmic contact here is nothing but a connection of the substrate or the
semiconductor.
During the measurement, ac( ) signal is applied on the Schokkty
metal and the Ohmic is connected to ground. The bias voltage varies within
certain range to achieve various time constant and trap state energy, and ac signal will
varies from 1KHz to 5MHz, large range of measure frequency ensure there is a peak
in the G/ plot so that we can determine and from it.
Graphs below show result of our measurement.
6E-14
4E-14
2E-14
0
1000 10000 100000 1000000
Freq[Hz]
G8-SCH2-VG-0-5_100
Figure 5.
This graph shows how G/ various with frequency. Form graph we see clearly
there is a peak exists. And my program will use this peak point determine other
important parameters.
G/w VS Freq
6E-13
4E-13
2E-13
G/W[F]
-1E-27
1000 10000 100000 1000000
-2E-13
-4E-13
Freq[Hz]
Figure 6.
Figure 6. shows how G/ various with frequency for different bias voltage say,
different . Form graph we can see that the peak G/ occur at different frequency
for different bias condition. Recall that =2, therefore that indicate time constant
are different for different bias condition, further, traps state energy are
different for different bias condition.
Dit VS Et
5E+11
4.5E+11
4E+11
Dit[eV-1cm-2]
3.5E+11
3E+11
2.5E+11
2E+11
1.5E+11
1E+11
5E+10
0
0.3 0.35 0.4 0.45 0.5
Et[eV]
Figure 8.
Figure 7 and 8 show how is at different trap state energy , Figure 7 is the
summary table and Figure 8 is the plot.