Professional Documents
Culture Documents
René Janssen
2008
6.5 Billion people use 12 TW
2050
8-10 Billion people use 20 TW
1
5-12-2008
2
5-12-2008
30 organics €
25 24
increasing
20 19 19
15 13
10
10
5
5
0
Status of 2005 3J sc-Si mc-Si CIS a-Si dye polymer
Source: Konarka
3
5-12-2008
N Mg N
O
N
O O
O
O
light
electron
glass
transfer
transparent electrode
-
absorption - 100 nm
+
metal electrode
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5-12-2008
Pump 510 nm
O
)n h+ OMe
O
( PCBM
MDMO-PPV O
e-
Pump 670 nm
-0.2
-0.8
-0.1 510 nm
-0.4
670 nm
0.0 0.0
-ΔT//T
Probe 970 nm
0.4 970 nm 0.1 ΔT/T
0.8
0.2
488 nm
1.2 630 nm 0.3
)n
metal
( interface layer
O MDMO-PPV
semiconducting polymer
transparent
conductive polymer
transparent
conductive oxide
OMe
glass
O
PCBM
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5-12-2008
VOC = 0.87 V
0
O
)n OMe
O
( -2
J (mA/cm )
2
O FF = 0.60
MDMO-PPV PCBM -4
0.2 (V × I )max
FF = ≤1
0.1
Voc × Isc
0.0 Sean Shaheen et al., Appl. Phys. Lett. 2001, 78, 841
400 500 600 700 800
Martijn Wienk (ECN) and Jeroen van Duren (TU/e)
Wavelength [nm]
)n
OMe
O (
O
5μm 5μm
200 nm 200 nm
see also: T. Martens et al., Synth. Met. 2003, 138, 243 Joachim Loos and Xiaoniu Yang (TU/e)
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5-12-2008
C6H13
S n
O
Me
O
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5-12-2008
TEM
P3HT
0.39 nm*
PCBM
0.46 nm
after annealing
at 110 °C for
60 min
P3HT
0.39 nm*
PCBM
0.46 nm
* P3HT whiskers: K.J. Ihn, J. Moulton, P. Smith, J. Polym. Sci. Part B: Polym. Phys. 1993, 31, 735.
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5-12-2008
Absorption efficiency
Quantum efficiency
Energy efficiency
O
Me
photon energy > 1.9 eV !!!!!
O
FF = 0.65
S n Voc = 0.62 V
PCBM P3HT
6 0.20
14.3% 4.0%
n (x 10 )
-18
0.15
s Out
4
Out
Power In
Power O
Photons In
Electrons
0.10
2
0.05
0 0.00
500 1000 1500 2000 2500 3000 3500 500 1000 1500 2000 2500 3000 3500
Wavenlength (nm) Wavelength (nm)
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5-12-2008
P3HT PCBM
33
3.3
driving force for charge separation = 0.9 eV
1.9 eV 4.2
HOMOD-LUMOA = 1.0 eV
5.2 loss at electrodes
2 x ~0.2 = 0.4 V
Voc ≈ 0.62 V
Theoretical efficiencies
Eg = α+β
20
Voc ≈ β - 0.4 V
Theroretical Efficiency ((%)
α = 0.2 eV
15 LUMO
α LUMO
10
HOMO β
5 α = 0.9 eV HOMO
0 Donor Acceptor
2.0 1.5 1.0
Band gap energy α + β (eV)
Goal: α+β ≈ 1.4 eV
α small
assuming: FF = 0.7, EQE = 0.9 and
0.2 V loss at each electrode
Martijn Wienk (TU/e)
10
5-12-2008
S
N N LiF / Al
C10 S S
C10 n
Active layer
smu
OMe
PFTBT
PEDOT:PSS
O
ITO
Glass
PCBM
75 % of the absorbed
photons generate current
Voc = 1.0
10V
FF = 0.54
Jsc = 7.7 mA/cm2
ηe = 4.2 %
AM1.5 1000 W/m2
0.5
0.4
S N O
0.3 C12H25
EQE
H25C12 S
0.2 O n
N S
0.1
0.0 PBBTDPP2
400 500 600 700 800 900
wavelength (nm)
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5-12-2008
0.5
0.4
0.3
EQE
n
S S
0.2
N N
S
0.1
Eg = 1.40 eV
0.0
400 500 600 700 800 900 1000
Wavelength
CT
X
S1 S1 S1
ΔGCT PET
CT
PET
ΔGCRT CRT
Energy [eV]
T1 T1 T1
X
CT
film
Δ
Eg,OPT
film
ETfilm ECT
OPT OPT
EHOMO(D) - ELUMO(A)
0
I IIa IIb
S1 and T1 represent the lowest singlet and triplet states in the D – A combination
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5-12-2008
OPT OPT
ΔGCT = ECT − Eg = | EHOMO (D) − ELUMO ( A ) | +0.29 − Eg
Only -0.1 eV
is enough to
make PET
2 2
[eV]
VOC [V]
1 1
ECT,max
PL
0 0
0 1 2
OPT OPT
| EHOMO(D) - ELUMO(A) | [eV]
OPT OPT
ECT = | EHOMO (D) − ELUMO ( A ) | +0.29 eV
OPT OPT
eVoc = | EHOMO (D) − ELUMO ( A ) | −0.18 eV
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5-12-2008
film
Eg,OPT
Energy [eV]
film
ECT
film
ET
Δ = 0.3
> 0.6 OPT OPT
> 0.4 |EHOMO(D)-ELUMO(A)|
0.2
eVOC
0 S0
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5-12-2008
Refinement
Wavelength [nm]
1000
1200
1400
1600
600
800
PF10TBT:[60]PCBM
(0.70 eV, z, {),
10 PCPDTBT:[70]PCBM
etical) Efficiency [%]
PBBTDPP2:[70]PCBM
(0.80 eV, S, U)
5 P3HT:[60]PCBM
(1.09 eV, ,
).
(Theore
EQE = 65%
FF = 0.65 So we may hope
0 for ~11%
2.0 1.5 1.0
Optical band gap energy [eV]
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5-12-2008
≤ 10 % 80 %
- - -
+ + +
Scientific question:
What are the requirements for full charge separation art very low
electrical fields?
e-
e-
h+
h+
n p
recombination junction
16
5-12-2008
Back cell
h+
ZnO in
acetone
20 nm.
Light
-
1
0.75 V 0.82 V
cm )
2
0
Current Density (mA/c
+ 1.53 V
LiF/Al -1
P3HT:PCBM
PEDOT
-2
ZnO
MDMO-PPV:PCBM front cell
PEDOT:PSS -3 back cell
ITO tandem
Glass -4
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5-12-2008
1
0.75 V
2 x 0.82 V
-1
2.19 V
+
LiF/Al -2
P3HT:PCBM
PEDOT
ZnO -3 front cell
MDMO-PPV:PCBM back cell
PEDOT -4 triple junction
ZnO
MDMO PPV PCBM
MDMO-PPV:PCBM 00
0.0 05
0.5 10
1.0 15
1.5 20
2.0 25
2.5
PEDOT:PSS
ITO
Voltage (V)
Glass Voc = 2.19 V
Isc = 2.6 mA/cm2
8 solution processed layers on top of each other FF = 0.37
processing time ~10 min. MPP = 2.1 mW/cm2
MDMO-PPV:PCBM
2
0 PEDOT
ZnO
MDMO-PPV:PCBM
-1 PEDOT
ZnO
Single junction MDMO-PPV:PCBM
-2 PEDOT
Double junction
Triple junction ZnO
MDMO-PPV:PCBM
Six fold junction
-3 PEDOT
ZnO
0 1 2 3 4 MDMO-PPV:PCBM
MDMO PPV:PCBM
PEDOT:PSS
Voltage (V) ITO
Glass
Voc = 0.75 V Voc = 1.53 V Voc = 2.19 V Voc = 3.46 V
Isc = 3.5 mA/cm2 Isc = 3.0 mA/cm2 Isc = 2.6 mA/cm2 Isc = 1.6 mA/cm2
FF = 0.48 FF = 0.40 FF = 0.37 FF = 0.32
MPP = 1.3 mW/cm2 MPP = 1.8 mW/cm2 MPP = 2.1 mW/cm2 MPP = 1.7 mW/cm2
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5-12-2008
S N O
+ S C12H25
LiF/Al
PBBTDPP2:PCBM C12H25 S
O N S n
n PEDOT
ZnO
PF10TBT:PCBM PBBTDPP2
PEDOT:PSS
ITO
Glass
O
Me
O
80
PFTBT:PC60BM [60]PCBM
70 PBBTDPP2:PC60BM
60
Absorption (%)
50
40 PF10TBT
30
S
20 N N
C10H21 S S
10 C10H21 n
0
400 500 600 700 800 900 1000
Wavelength (nm) J. Gilot (TU/e)
Preliminary performance
Preliminary results from solar simulator
-
1
0
A/cm )
2
-1
Current Density (mA
+
LiF/Al
-2
PBBTDPP2:PCBM 78 nm
n PEDOT -3
ZnO
-4
PF10TBT:PCBM 155 nm
PEDOT:PSS -5
ITO
-6
Glass 0.0 0.5 1.0 1.5 2.0
Voltage (V)
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5-12-2008
Efficiencies of about 10% seem within reach but are a challenging goal
Acknowledgement
TU/e ECN
Dirk Veldman Sjoerd Veenstra
Jan Gilot Jan Kroon
Stefan Meskers
Martijn Wienk RUG
Arjan Zoombelt Paul Blom
Munazza Shahid Bert de Boer
Shahid Ashraf
Johan Bijleveld TNO
Marc Koetse
Joachim Loos Jorgen Sweelssen
Svetlana van Bavel
20