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Philips Semiconductors Product specification

NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904

DESCRIPTION PIN CONFIGURATIONS


The 532/358/LM2904 consists of two independent, high gain,
internally frequency-compensated operational amplifiers internally D, FE, N Packages
frequency-compensated operational amplifiers designed specifically
to operate from a single power supply over a wide range of voltages.
OUTPUT A 1 8 V+
Operation from dual power supplies is also possible, and the low
power supply current drain is independent of the magnitude of the INVERTING INPUT A 2 A B 7 OUTPUT B
–+ +–
power supply voltage.
NON INVERTING INPUT A 3 6 INVERTING INPUT B

V– 4 5 NON INVERTING INPUT B


UNIQUE FEATURES
SL00282
In the linear mode the input common-mode voltage range includes
ground and the output voltage can also swing to includes ground Figure 1. Pin Configuration
and the output voltage can also swing to ground, even though
operated from only a single power supply voltage. The unity gain • Wide power supply range single supply—3VDC to 30VDC or dual
cross frequency is temperature-compensated. The input bias current
supplies—±1.5VDC to ±15VDC
is also temperature-compensated.
• Very low supply current drain (400µA)—essentially independent of
supply voltage (1mW/op amp at +5VDC)
FEATURES • Low input biasing current—45nADC temperature-compensated
• Internally frequency-compensated for unity gain • Low input offset voltage—2mVDC and offset current—5nADC
• Large DC voltage gain—100dB • Differential input voltage range equal to the power supply voltage
• Wide bandwidth (unity gain)—1MHz (temperature-compensated) • Large output voltage—0VDC to V+ 1.5VDC swing

EQUIVALENT CIRCUIT

v+

6 µA 100µA 6µA

Q5

Q6

CC

Q7

Q2 Q3 RSC

OUTPUT
Q1 Q4

INPUTS Q11 Q13


+

Q10 Q12 50µA

Q8 Q9

SL00283

Figure 2. Equivalent Circuit

1995 Nov 27 1 853-1241 16050


Philips Semiconductors Product specification

NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904

ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Small Outline (SO) Package 0 to +70°C NE532D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE532N SOT97-1
8-Pin Plastic Small Outline (SO) Package -40°C to +85°C SA532D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -40°C to +85°C SA532N SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) -40°C to +85°C SA532FE 0580A
8-Pin Plastic Small Outline (SO) Package -40°C to +125°C LM2904D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -40°C to +125°C LM2904N SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C LM158FE 0580A
8-Pin Plastic Dual In-Line Package (DIP) -25°C to +125°C LM258N SOT97-1
8-Pin Plastic Small Outline (SO) Package -25°C to +125°C LM258D SOT96-1
8-Pin Plastic Small Outline (SO) Package 0 to +70°C LM358D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C LM358N SOT97-1
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C LM358AN SOT97-1
8-Pin Plastic Small Outline (SO) Package 0 to +70°C LM358AD SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -55°C to +125°C SE532N SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C SE532FE 0580A

ABSOLUTE MAXIMUM RATINGS


SYMBOL PARAMETER RATING UNIT
VS Supply voltage, V+ 32 or ±16 VDC
Differential input voltage 32 VDC
VIN Input voltage -0.3 to +32 VDC
Maximum power dissipation
TA=25°C (Still air)1
PD FE package 780 mW
N package 1160 mW
D package 780 mW
Output short-circuit to GND5
V+<15 VDC and TA=25°C Continuous
Operating ambient temperature range
NE532/LM358/LM358A 0 to +70 °C
TA LM258 -25 to +85 °C
LM2904 -40 to +125 °C
SA532 -40 to +85 °C
SE532/LM158 -55 to +125 °C
TSTG Storage temperature range -65 to +150 °C
TSOLD Lead soldering temperature (10sec max) 300 °C
NOTES:
1. Derate above 25°C, at the following rates:
FE package at 6.2mW/°C
N package at 9.3mW/°C
D package at 6.2mW/°C

1995 Nov 27 2
Philips Semiconductors Product specification

NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904

DC ELECTRICAL CHARACTERISTICS
TA = 25°C, V+=+5V, unless otherwise specified.
NE/SA532/
SE532, LM158/258
SYMBOL PARAMETER TEST CONDITIONS LM358/LM2904 UNIT
Min Typ Max Min Typ Max
RS=0Ω ±2 ±5 ±2 ±7 mV
VOS Offset voltage1
RS=0Ω, over temp. ±7 ±9 mV
VOS Drift RS=0Ω, over temp. 7 7 µV/°C
IIN (+)-IIN (-) ±3 ±30 ±5 ±50 nA
IOS Offset current
Over temp. ±100 ±150 nA
IOS Drift Over temp. 10 10 pA/°C
IIN (+) or IIN (-) 45 150 45 250 nA
IBIAS Input current2
Over temp., IIN (+) or IIN (-) 40 300 40 500 nA
IB Drift Over temp. 50 50 pA/°C
VCM Common-mode voltage V+=30V 0 V+-1.5 0 V+-1.5 V
range3 Over temp., V+=30V 0 V+-2.0 0 V+-2.0 V
Common-mode rejection
CMRR V+=30V 70 85 65 70 dB
ratio
RL≥2kΩ, V+=30V,
VOH Output voltage swing 26 26 V
over temp.
RL≥10kΩ, V+=30V,
27 28 27 28 V
over temp.
VOL Output voltage swing RL≥10kΩ, over temp. 5 20 5 20 mV
RL=∞, V+=30V
0.5 1.0 0.5 1.0 mA
ICC Supply current RL=∞ on all amplifiers,
0.6 1.2 0.6 1.2 mA
over temp., V+ =30V
RL≥2kΩ, VOUT ±10V,
V+=15V 50 100 25 100 V/mV
AVOL Large-signal voltage gain
(for large VO swing) 25 15 V/mV
over temp.
Supply voltage rejection
PSRR RS=0Ω 65 100 65 100 dB
ratio
Amplifier-to-amplifier cou- f=1kHz to 20kHz
-120 -120 dB
pling4 (input referred)
Output current VIN+=+1VDC, VIN-=0VDC,
IOUT 20 40 20 40 mA
Source V+=15VDC
VIN+=+1VDC, VIN-=0VDC,
10 20 10 20 mA
V+=15VDC, over temp.
VIN-=+1VDC, VIN+=0VDC,
Sink 10 20 10 20 mA
V+=15VDC
VIN-=+1VDC, VIN+=0VDC,
5 8 5 8 mA
V+=15VDC, over temp.
VIN+=0V, VIN-=+1VDC,
12 50 12 50 µA
VO=200mV
ISC Short circuit current5 40 60 40 60 mA
Differential input voltage6 V+ V+ V
GBW Unity gain bandwidth TA=25°C 1 1 MHz
SR Slew rate TA=25°C 0.3 0.3 V/µs
VNOISE Input noise voltage TA=25°C, f=1kHz 40 40 nV/√Hz

1995 Nov 27 3
Philips Semiconductors Product specification

NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904

DC ELECTRICAL CHARACTERISTICS TA=25°C, V+=+5V, unless otherwise specified.


LM358A
SYMBOL PARAMETER TEST CONDITIONS UNIT
Min Typ Max
RS=0Ω ±2 ±3 mV
VOS Offset voltage1
RS=0Ω, over temp. ±5 mV
VOS Drift RS=0Ω, over temp. 7 20 µV/°C
IIN (+)-IIN (-) 5 ±30 nA
IOS Offset current
Over temp. ±75 nA
IOS Drift Over temp. 10 300 pA/°C
IIN (+) or IIN (-) 45 100 nA
IBIAS Input current2
Over temp., IIN (+) or IIN (-) 40 200 nA
IB Drift Over temp. 50 pA/°C
VCM Common-mode voltage V+=30V 0 V+-1.5 V
range3 Over temp., V+=30V 0 V+-2.0 V
CMRR Common-mode rejection ratio V+=30V 65 85 dB
RL≥2kΩ, V+=30V,
VOH Output voltage swing 26 V
over temp.
RL≥10kΩ, V+=30V,
27 28 V
over temp.
VOL Output voltage swing RL≥10kΩ, over temp. 5 20 mV
RL=∞, V+=30V
0.5 1.0 mA
ICC Supply current RL=∞ on all amplifiers,
0.6 1.2 mA
over temp., V+ =30V
RL≥2kΩ, VOUT ±10V,
V+=15V 25 100 V/mV
AVOL Large-signal voltage gain
(for large VO swing) 15 V/mV
over temp.
PSRR Supply voltage rejection ratio RS=0Ω 65 100 dB
Amplifier-to-amplifier coupling4 f=1kHz to 20kHz (input referred) -120 dB
Output current VIN+=+1VDC, VIN-=0VDC,
IOUT 20 40 mA
Source V+=15VDC
VIN+=+1VDC, VIN-=0VDC,
10 20 mA
V+=15VDC, over temp.
VIN-=+1VDC, VIN+=0VDC,
Sink 10 20 mA
V+=15VDC
VIN-=+1VDC, VIN+=0VDC,
5 8 mA
V+=15VDC, over temp.
VIN+=0V, VIN-=+1VDC,
12 50 µA
VO=200mV
ISC Short circuit current5 40 60 mA
Differential input voltage6 V+ V
GBW Unity gain bandwidth TA=25°C 1 MHz
SR Slew rate TA=25°C 0.3 V/µs
VNOISE Input noise voltage TA=25°C, f=1kHz 40 nV/√Hz
NOTES:
1. VO ≈ 1.4V, RS=0Ω with V+ from 5V to 30V; and over the full input common-mode range (0V to V+ -1.5V).
2. The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of
the output so no loading change exists on the input lines.
3. The input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3V. The upper end of the
common-mode voltage range is V+ -1.5V, but either or both inputs can go to +32V without damage.
4. Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts. This
typically can be detected as this type of capacitance coupling increases at higher frequencies.
5. Short-circuits from the output to V+ can cause excessive heating and eventual destruction. The maximum output current is approximately
40mA independent of the magnitude of V+. At values of supply voltage in excess of +15VDC, continuous short-circuits can exceed the power
dissipation ratings and cause eventual destruction.
6. The input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3V. The upper end of the
common-mode voltage range is V+ -1.5V, but either or both inputs can go to +32VDC without damage.

1995 Nov 27 4
Philips Semiconductors Product specification

NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904

TYPICAL PERFORMANCE CHARACTERISTICS

Supply Current Current Limiting Voltage Gain


4 90 160
SUPPLY CURRENT DRAIN (mADC )

80
RL + 20 kΩ

OUTPUT CURRENT (mADC)

AVOL — VOLTAGE GAIN (dB)


3 70 120

60 RL + 2 kΩ

2 50 80
40

30
1 TA = 0oC to +125oC 40
20

TA = 55oC 10
0
0 0 0
10 20 30 40 55 35 –15 5 25 45 65 85 105 125 0 10 20 30 40
SUPPLY VOLTAGE (VDC) TEMPERATURE (oC) SUPPLY VOLTAGE (VDC)

Open–Loop Frequency Large–Signal Frequency Voltage–Follower


Response Response Response

OUTPUT VOLTAGE (V)


140 20 4
V+ 10M VDC RL < 2K V+ 15 VDC
0.1µf 1K 100K 3
VO — OUTPUT SWING (Vp–p )

120
VIN –
+ 15 2
100 –
VOLTAGE GAIN (dB)

VO +
V+/2 VIN V 1
+7 2K O
80
10 VDC 0
V+ = 30 VDC AND
INPOUT VOLTAGE (V)

60 –55oC < TA < +125oC


3

40 5 2
V+ = 10 to 15 VDC AND
20 –55oC < TA < +125oC 1

0 0
0 1K 10K 100K 1M 0 10 20 30 40
1 10 100 1K 10K 100K 1M 10M
FREQUENCY (Hz) FREQUENCY (Hz) TIME (µS)

Voltage–Follower Pulse Output Characteristics Output Characteristics


Response (Small–Signal) Current Sourcing Current Sinking
500 8 10
V+ V+ = +5 VDC
V+ = +15 VDC
REFERENCE TO V+ (VDDC )

VO – OUTPUT VOLTAGE (VDC )

7
V∆ – OUTPUT VOLTAGE
EO – OUTPUT VOLTAGE (mV)

450 EO +V+ /2 V+ = +30 VDC


6 V2
50pF
+ 1
θIN
5
400 – IO V+

4 –
INPUT V+ /2
350 0.1
3 INDEPENDENT OF V+ + IO
OUTPUT VO
TA = +25oC
300 2
TA = +25oC TA = +25oC
V+ = +30 VDC 1 0.01
250
0 1 2 3 4 5 6 7 8 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100

t — TIME (µS) IO+ – OUTPUT SOURCE CURRENT (mA DC) IO – OUTPUT SINK CURRENT (mA DC)

SL00284

Figure 3. Typical Performance Characteristics

1995 Nov 27 5
Philips Semiconductors Product specification

NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Input Voltage Range Input Current Common–Mode Rejection Ratio

CMRR — COMMON–MODE REJECTION RATIO (dB)


15 90 120
VCM = 0 VDC
80
100
+V IN — INPUT VOLTAGE ( +VDC)

I B – INPUT CURRENT (nA DC )


70 V+ = +30 VDC

10 60
80
NEGATIVE
50 +7.5 VDC
V+ = +15 VDC 100k
60
POSITIVE 40 100

30 – VO
5 40
+ 100 +
20 V+ = +5 VDC VIN
20 100k 7.5 VDC
10

0 0
0 5 10 15 –55 –35 –15 5 25 45 65 85 105 125 100 1k 10k 100k 1M
V+ OR V– — POWER SUPPLY VOLTAGE (+ VDC) TA — TEMPERATURE (Co) f — FREQUENCY (Hz)

SL00285

Figure 4. Typical Performance Characteristics (cont.)

TYPICAL APPLICATIONS

RF V+

V+

RIN 8 V+
10K
VIN –
VO V+ 8
+
4 VIN –
2 VO
RL +
4
V+ 10k
2 BLOCKS
DC.
GAIN R1 RF
Single Supply Inverting Amplifier
V+

10K
V+ Input Biasing Voltage Follower
8
VIN –
VO
+
4
10k

Non-Inverting Amplifier

SL00286

Figure 5. Typical Applications

1995 Nov 27 6
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