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NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904
EQUIVALENT CIRCUIT
v+
6 µA 100µA 6µA
Q5
Q6
CC
Q7
Q2 Q3 RSC
OUTPUT
Q1 Q4
Q8 Q9
SL00283
NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Small Outline (SO) Package 0 to +70°C NE532D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE532N SOT97-1
8-Pin Plastic Small Outline (SO) Package -40°C to +85°C SA532D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -40°C to +85°C SA532N SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) -40°C to +85°C SA532FE 0580A
8-Pin Plastic Small Outline (SO) Package -40°C to +125°C LM2904D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -40°C to +125°C LM2904N SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C LM158FE 0580A
8-Pin Plastic Dual In-Line Package (DIP) -25°C to +125°C LM258N SOT97-1
8-Pin Plastic Small Outline (SO) Package -25°C to +125°C LM258D SOT96-1
8-Pin Plastic Small Outline (SO) Package 0 to +70°C LM358D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C LM358N SOT97-1
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C LM358AN SOT97-1
8-Pin Plastic Small Outline (SO) Package 0 to +70°C LM358AD SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -55°C to +125°C SE532N SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C SE532FE 0580A
1995 Nov 27 2
Philips Semiconductors Product specification
NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904
DC ELECTRICAL CHARACTERISTICS
TA = 25°C, V+=+5V, unless otherwise specified.
NE/SA532/
SE532, LM158/258
SYMBOL PARAMETER TEST CONDITIONS LM358/LM2904 UNIT
Min Typ Max Min Typ Max
RS=0Ω ±2 ±5 ±2 ±7 mV
VOS Offset voltage1
RS=0Ω, over temp. ±7 ±9 mV
VOS Drift RS=0Ω, over temp. 7 7 µV/°C
IIN (+)-IIN (-) ±3 ±30 ±5 ±50 nA
IOS Offset current
Over temp. ±100 ±150 nA
IOS Drift Over temp. 10 10 pA/°C
IIN (+) or IIN (-) 45 150 45 250 nA
IBIAS Input current2
Over temp., IIN (+) or IIN (-) 40 300 40 500 nA
IB Drift Over temp. 50 50 pA/°C
VCM Common-mode voltage V+=30V 0 V+-1.5 0 V+-1.5 V
range3 Over temp., V+=30V 0 V+-2.0 0 V+-2.0 V
Common-mode rejection
CMRR V+=30V 70 85 65 70 dB
ratio
RL≥2kΩ, V+=30V,
VOH Output voltage swing 26 26 V
over temp.
RL≥10kΩ, V+=30V,
27 28 27 28 V
over temp.
VOL Output voltage swing RL≥10kΩ, over temp. 5 20 5 20 mV
RL=∞, V+=30V
0.5 1.0 0.5 1.0 mA
ICC Supply current RL=∞ on all amplifiers,
0.6 1.2 0.6 1.2 mA
over temp., V+ =30V
RL≥2kΩ, VOUT ±10V,
V+=15V 50 100 25 100 V/mV
AVOL Large-signal voltage gain
(for large VO swing) 25 15 V/mV
over temp.
Supply voltage rejection
PSRR RS=0Ω 65 100 65 100 dB
ratio
Amplifier-to-amplifier cou- f=1kHz to 20kHz
-120 -120 dB
pling4 (input referred)
Output current VIN+=+1VDC, VIN-=0VDC,
IOUT 20 40 20 40 mA
Source V+=15VDC
VIN+=+1VDC, VIN-=0VDC,
10 20 10 20 mA
V+=15VDC, over temp.
VIN-=+1VDC, VIN+=0VDC,
Sink 10 20 10 20 mA
V+=15VDC
VIN-=+1VDC, VIN+=0VDC,
5 8 5 8 mA
V+=15VDC, over temp.
VIN+=0V, VIN-=+1VDC,
12 50 12 50 µA
VO=200mV
ISC Short circuit current5 40 60 40 60 mA
Differential input voltage6 V+ V+ V
GBW Unity gain bandwidth TA=25°C 1 1 MHz
SR Slew rate TA=25°C 0.3 0.3 V/µs
VNOISE Input noise voltage TA=25°C, f=1kHz 40 40 nV/√Hz
1995 Nov 27 3
Philips Semiconductors Product specification
NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904
1995 Nov 27 4
Philips Semiconductors Product specification
NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904
80
RL + 20 kΩ
60 RL + 2 kΩ
2 50 80
40
30
1 TA = 0oC to +125oC 40
20
TA = 55oC 10
0
0 0 0
10 20 30 40 55 35 –15 5 25 45 65 85 105 125 0 10 20 30 40
SUPPLY VOLTAGE (VDC) TEMPERATURE (oC) SUPPLY VOLTAGE (VDC)
120
VIN –
+ 15 2
100 –
VOLTAGE GAIN (dB)
VO +
V+/2 VIN V 1
+7 2K O
80
10 VDC 0
V+ = 30 VDC AND
INPOUT VOLTAGE (V)
40 5 2
V+ = 10 to 15 VDC AND
20 –55oC < TA < +125oC 1
0 0
0 1K 10K 100K 1M 0 10 20 30 40
1 10 100 1K 10K 100K 1M 10M
FREQUENCY (Hz) FREQUENCY (Hz) TIME (µS)
7
V∆ – OUTPUT VOLTAGE
EO – OUTPUT VOLTAGE (mV)
4 –
INPUT V+ /2
350 0.1
3 INDEPENDENT OF V+ + IO
OUTPUT VO
TA = +25oC
300 2
TA = +25oC TA = +25oC
V+ = +30 VDC 1 0.01
250
0 1 2 3 4 5 6 7 8 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100
t — TIME (µS) IO+ – OUTPUT SOURCE CURRENT (mA DC) IO – OUTPUT SINK CURRENT (mA DC)
SL00284
1995 Nov 27 5
Philips Semiconductors Product specification
NE/SA/SE532/
Low power dual operational amplifiers
LM158/258/358/A/2904
10 60
80
NEGATIVE
50 +7.5 VDC
V+ = +15 VDC 100k
60
POSITIVE 40 100
30 – VO
5 40
+ 100 +
20 V+ = +5 VDC VIN
20 100k 7.5 VDC
10
0 0
0 5 10 15 –55 –35 –15 5 25 45 65 85 105 125 100 1k 10k 100k 1M
V+ OR V– — POWER SUPPLY VOLTAGE (+ VDC) TA — TEMPERATURE (Co) f — FREQUENCY (Hz)
SL00285
TYPICAL APPLICATIONS
RF V+
V+
RIN 8 V+
10K
VIN –
VO V+ 8
+
4 VIN –
2 VO
RL +
4
V+ 10k
2 BLOCKS
DC.
GAIN R1 RF
Single Supply Inverting Amplifier
V+
10K
V+ Input Biasing Voltage Follower
8
VIN –
VO
+
4
10k
Non-Inverting Amplifier
SL00286
1995 Nov 27 6
This datasheet has been download from:
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