On-Chip Temperature Control Circuit

Using Common Devices

MSEE Project Report

Frank D. Braun

Graduate Advisor: Signature Date

Dr. Tamara Papalias ________________________ __________

Graduate Co-advisor:

Dr. David Parent ________________________ __________

Graduate Coordinator:

Dr. Avtar Singh ________________________ __________

Frank D. Braun
6182 Cottle Road
#H3
San Jose, CA 95123

Student #W0150723
408-363-0608
fdbraun@ix.netcom.com
 Abstract
When in use, the temperature of an IC die is generally not controlled very precisely. Yet

temperature is known to affect the performance of virtually all IC circuits. An on-chip

circuit has been designed fabricated and tested that will control the temperature of certain

parts of an IC die, or the entire die itself. No special devices or layers are required.

Equilibrium temperatures from less than 0oC to more than 150oC are attainable. Time to

thermal equilibrium is on the order of seconds. This circuit has been successfully

simulated fabricated though MOSIS and tested in TSMC.25 technology. The circuit can

control a 1500mmx1500mm die in a 40 pin Ceramic package over a range on plus or

minus 2 oC above ambient. Such a circuit could play a role in the more consistent

performance of IC circuits, especially analog, and in their testing.

2
 Table of Contents
1.0 Introduction ………………………………………………………...4
1.1 Review of Common Temperature Control Systems, 4
1.2 The Need for On-Chip Temperature Control, 5

2.0 Design ………………………………………………………….…....6

2.1 Initial Design Issues, 6
2.2 Temperature-Sensitive Devices, 6
2.3 Final Design, 7

3.0 Circuit Performance …………………………………….……..….8

3.1 Amplification of Diode Voltage Changes, 8
3.2 Factors Influencing Set-point Temperature, 9

4.0 Design and Performance Issues ……………………………….....11

4.1 Thermal Model, 12
4.2 Thermal Ringing, 13
4.3 Analysis of Transient Thermal Behavior, 14
4.4 Heater Current and Grounding, 17
4.5 Circuit Area, 17
4.6 Extra On-chip Diode, 18
4.7 Tradeoffs, 19

5. Applications ……………………………………………………..…19

6. Testing and Results

……………………………………………………….…...20

7. Recommendations for Future Work …………………………......20

8. Summary and Conclusions …………………………………….....20

References …………………………………………………………....22

Acknowledgements ………………………………………………......22

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1.0 Introduction
The temperature of an IC die greatly influences the functioning of any circuitry present.

If temperature varies, so will circuit performance. In some cases it may be important to

hold the die temperature at a nearly constant level, even if this level is somewhat elevated.

1.1 Review of Common Temperature Control Systems

A common approach to temperature control is to control all of the IC chips on a

circuit board at the same time – a large-scale approach. This often involves the use of a

fan and heat sink. A very simple system allows the fan to run at a constant RPM. Such a

system will have no particular set-point temperature, since the operating temperature will

still vary according to how much circuitry is running and what the ambient temperature is.

Other systems may employ thermal feedback (from a thermistor, for instance), in

order to vary fan speed and keep the maximum temperature of the chips on the PCB below

a maximum temperature, or even close to a desired set-point temperature. Such a system

still does not take into account variations in temperature from chip to chip on the PCB. If a

particular IC chip needs to have its temperature controlled more precisely, other methods

must be used.

One method of local control involves the use of a thermoelectric heat pump. Such

a device can electronically pump heat from an IC chip to a heat sink [1]. Such a system

can more accurately control die temperature, than the more gross control of a fan and heat

sink. If a temperature sensor is attached to the IC chip, the information from this sensor

can be sent to a controller to accurately control the current of (and hence, heat pumped by)

4
the thermoelectric spot cooler. The disadvantages of such a system are the added space,

weight, and expense of the thermoelectric cooler and heat sink. The extra complexity also

introduces some extra risk in terms of reliability.

Another system of local temperature control involves the use of phase-change

material [2]. Such a system can hold the temperature of an IC chip at a nearly constant

temperature by absorbing heat into a material that changes physical state (from solid to

liquid, for instance). The heat generated by the IC die does not raise the temperature of the

die (appreciably) nor does it raise the temperature of the phase-change material. The heat

instead goes into changing the state of the phase-change material. This can go on for only

a finite amount of time, however, before all of the material has changed phase. Then the

heat generated will force the temperature of both the IC die and the phase-change material

to increase. The obvious drawback of this system is that it only works for a finite time.

Also, there is the added system complexity and the containment problem of the phase-

change material (how to keep it from leaking away).

1.2 The Need for On-Chip Temperature Control

Present IC temperature control systems generally control more than just the IC die

temperature. They also control the temperature of the environment surrounding the IC

package. If there are several IC chips on the same circuit board that need to operate at

different set-point temperatures, then each chip would need its own feedback control

system. Such systems add weight, space, expense, and complexity (unreliability) to the

overall system.

A system that was entirely contained within the IC die itself would prove superior

in several ways. One, it would not add significant size or weight to the overall system.

5
Two, it would control only the temperature of its own die (local control). Three, the time

to reach thermal equilibrium would be much shorter, due to the very small thermal mass of

the die (the system would not control the temperature of the surrounding environment, just

the IC die). It is also conceivable that the temperature of such a system could be held

constant to within a small fraction of one degree Celsius – due, in part, to almost

immediate thermal feedback.

Such a system is proposed here, using only commonly available devices in a

commonly available process.

2.0 Design

In order for this temperature control system to be widely available, only commonly

available components will be used. Devices such as on-chip thermistors or on-chip

thermoelectric devices have not been considered. Also, the process parameters used in

simulations are those for a commonly available process – the TSMC 0.25 micron process.

Process parameter values for actual MOSIS runs are available from the MOSIS web site.

2.1 Initial Design Issues

One of the main goals of this project is to create a temperature control system that

is entirely within the local IC die. In order to achieve this, it is proposed to use on-board

resistors as heaters to cause the temperature of the die to rise to a predetermined set point

temperature (TSET). The control circuitry for these heaters is on the same die.

2.2 Temperature-sensitive devices

Most devices exhibit some temperature dependence in their performance. It is

desired that the device(s) to be used in this design show a large well-understood

6
temperature dependence. The device chosen is the diode. It is well known that a diode

exhibits an approximately –2mV/Co change in its terminal voltage drop as a function of

temperature change. This can be seen in Figure 1 for a temperature range from 0oC to

100oC.

Diode Voltage Temperature Dependance

-4
1.2x10
o
o
T = 100 C T=0 C

-4
0.8x10
Diode Current (A)

-4
0.4x10

0
0 0.2 0.4 0.6
Diode Voltage (V)
Figure 1: Diode Voltage Temperature Dependence

A diode-connected BJT will also work, but it is not as simple. Various types of integrated

circuit resistors show various levels of temperature dependence, but resistors in general

show a lower temperature dependence than diodes. Therefore the diode was chosen as the

temperature-sensing element.

2.3 Final Design

7
 A simplified schematic of the proposed temperature control circuit is shown in

Figure 2. The op-amp is a generic op-amp whose output can go close to ground.

VSET VDD* VDD

15k 35k VDD RHEATER

160

35k 15k

Figure 2: Simplified Temperature Control Circuit

3.0 Circuit Performance

It can be seen that the resistance heater is turned on whenever the non-inverting

input to the op-amp is higher in voltage than the inverting input. If the set point

temperature (as determined by VSET) is higher than the die’s present temperature, then the

heater is on and the die’s temperature is increasing.

3.1 Amplification of Diode Voltage Changes

As temperature increases, the voltage drop across the diodes decreases. This means

that the input voltages to the op-amp are approaching each other. A point will eventually

be reached where the inputs to the op-amp are nearly equal in voltage, and the op-amp will

shut off (to some degree). This can be seen in Figure 3 for VSET = VDD = 2.5 volts.

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 Heater Power vs Die Temperature

0.04

0.03
Heater Power (W)

Vset = 2.5 V
0.02

0.01

0
-20 0 20 40 60

Temperature (degrees C)

Figure 3: Set point temperature determined by VSET

If a lower set point temperature is desired, a lower voltage is placed on the VSET pin

(maintaining VDD at 2.5 volts). The effect of this is shown in Figure 4. As the voltage on

the VSET pin is decreased, the equilibrium temperature is decreased. The equilibrium

temperature can be determined, therefore, by the voltage on a single pin (VSET). It is

assumed that VDD and ground will always be available.

3.2 Factors Influencing Set-point Temperature

The values of the resistors adjacent the diodes strongly influence what the set point

temperature will be. The V-I characteristics of the diodes used in this design will also

influence the set point temperature but not as strongly as the adjacent resistors.

9
 Setpoint Temperature and Heater Power for Three Values of Vset

0.04

0.03
Heater Power (W)

Vset = 2.1 V
Vset = 2.3 V
Vset = 2.5 V
0.02

0.01

0
-20 0 20 40 60

Temperature (degrees C)

Figure 4: Set point temperature as a function of VSET

The range of temperature control can be extended by using the node marked VDD* in

Figure 2. If this node is decreased in voltage, it has the same effect as raising the voltage

on VSET. Therefore, the range of temperature control can be extended to higher

temperatures without forcing VSET to go above 2.5 volts. Such performance is shown in

Figure 5. The range of control can be extended even further by manipulating both VSET

and VDD* at the same time.

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 0.04
VSET = vDD = 2.5 V
VDD* feeds inverting node

0.03
Heater Power (watts)

VDD* = 2.1 V
0.02 VDD* = 2.0 V
VDD* = 1.9 V

0.01

0
100 120 140 160 180

Die Temperature (degrees C)

Figure 5: Range of control extended by using node VDD*

4.0 Design/Performance Issues

Several issues had to be addressed in the design of this circuit. The ultimate set

point temperature and the overall range of temperature control are influenced by these

factors. Issues addressed were:

• What thermal model should be used?

• Must op-amp gain (resolution on TSET) be reduced to avoid thermal ringing?

• How much current would a (heater) bond wire have to handle?

• How much area would the circuit consume?

• Would it be worth it to trade reliability for less circuit area?

11
4.1 Thermal Model

The thermal model used in the analysis of the performance of the temperature

control circuit is shown in Figure 6. This model (a relatively simple model) was used to

simplify calculations, especially of transient thermal behavior. TJ is the temperature of the

die or “junction.” TA is the ambient temperature. Heat flows from the die to ambient

according to the equation:

(Power from J to A) = (TJ – TA) / θJA

Lumped Thermal Impedance

TJ Die

θ JA Thermal
Impedance

TA Ambient Temperature

Figure 6: Thermal model

12
A constant factor that strongly influences the range of temperature control of this circuit is

the thermal impedance (θJA) of the package in which the IC die is to be housed. The

thermal impedances for some selected IC packages are shown in Figure 7.

Package Type Thermal Impedance

8-Pin SOP 163 C per Watt

3-Pin SOT23 336 C per Watt

6-Pin SOT23 96 C per Watt

8-Pin MSOP 206 C per Watt

8-Pin SOIC 110 C per Watt

8-Pin TSSOP 124 C per Watt

40-Pin DIP 33 C per Watt

Figure 7: Thermal impedances for selected packages.

In general larger packages have lower thermal impedance, and smaller packages have

higher thermal impedance

4.2 Thermal Ringing

A significant performance issue is whether or not the system will reach thermal

equilibrium without thermal “ringing.” If the gain of the op-amp were ideal (infinite), then

the heater would always be either completely on or completely off. The operating point for

a state of equilibrium would require, however, that the heaters be partially on, as shown in

Figure 8. The system would merely pass through the operating point but never come to

13
rest there. The die temperature would oscillate between a temperature above TSET (heaters

off) and a temperature below TSET (heaters all the way on). Even though the gain of the

0.04

0.03
Heater Power (W)

Operating Point

0.02

0.01
Heat lost from die through θJA

0
-20 0 20 40 60

Die Temperature (degrees C)

Figure 8: Heat in equals heat out at the operating point.

op-amp is obviously not infinite, there still could be thermal ringing if the op-amp gain

were too high. This would cause the power curve to be too steep near the set point

temperature, and the system would not come to rest at the desired operating point. It

would oscillate in a region around the set point temperature.

4.3 Analysis of Transient Thermal Behavior

The following analysis ignores the effects of possible thermal ringing and

essentially assumes that the system is critically damped (comes to the equilibrium set point

in the least amount of time possible).

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 The die junction temperature can be derived as a function of time. Heat (∆Q)

entering a body raises that body’s temperature by an amount (∆T) as governed by the

equation

∆Q = Cp∗M∗∆T, (1)

where Cp is the specific heat of the body and M is its mass. Since greater than 90% of the

chip die material is silicon, the values for these parameters are for silicon. Thus, Cp is

assumed to be 0.7J/goC. The mass, M, is calculated from the volume of any given die and

from the density of silicon, 2.33g/cm3.

We can find the change in temperature of the die as a function of net power into the die

using the differential form of Equation 1 (T = temperature and t = time):

PIN = dQ/dt = Cp∗M∗dT/dt (2)

As an example, we arbitrarily assume die dimensions of 2.9mm x 2.6mm and thickness =

0.35mm. This leads to a mass of 6.15 milligrams. A die this size would fit into a standard

8-pin SOIC package. The net power into the die can also be expressed as:

PIN = PHEATER – Pout (3)

The value of PHEATER is determined by the values of VDD and RHEATER. Pout varies as the

value of the junction temperature varies and is given by

Pout = (TJ - TA)/θJA (4)

From the information in Figure 7, we will assume a nominal value of 100oC/watt for

θJA. We arbitrarily choose 50oC for our set point die temperature and 25oC (room

temperature) for the beginning die temperature as well as the ambient temperature.

Choosing 2.5 volts for VSET, the total heater power (for 14 heaters) is about 0.42W. To

15
find an expression for TJ as a function of time, a differential equation can be derived using

equations (2), (3), and (4) in the following manner. Evaluating equation (4) gives:

Pout = (TJ – 25oC)/(100oC/W) (6)

Evaluating equation (3) gives:

PIN = 0.42W – (TJ – 25oC)/(100oC/W) (7)

Evaluating equation (2) gives:

PIN = (4.3mJ/oC) * dT/dt (8)

Setting equations (7) and (8) equal to each other yields the differential equation:

(4.3mJ/oC) * dTJ/dt = 0.42W – (TJ – 25oC)/(100oC/W)

The solution to this differential equation (under present boundary conditions) is:

TJ = (65oC)[1-e – (2. 3) ∗ t/sec] + 25oC

This relationship is shown in Figure 9. It can be seen that theory predicts the time to

100
M a x im u m a tta in a b le te m p e ra tu r e
Die Temperature (degrees C)

75
o -(2 .3 /s e c ) * t o
T J = ( 6 5 C ) [1 - e ] + 25 C

S e t p o in t te m p e r a tu r e
50

25
0 0 .5 1 .0 1 .5 2 .0

T im e ( s e c o n d s )

Figure 9: Time to equilibrium.

16
equilibrium to be about 0.2 second. If the set point temperature were made higher than

this, then the time to equilibrium would be longer.

4.4 Heater Current and Grounding

A potential problem is the high maximum current that a bond wire must carry

feeding current to a heater resistor. This current may be as high as 12mA. It is not

expected that this much current would harm the bond wire itself, but it may damage the

area where the bond wire is actually attached to a bond pad. The bond could actually be

destroyed. One solution to this problem would be to use a 2-mil bond wire – assuming that

the bond area would be much larger than for a 1-mil bond wire. The current density at the

bond interface would be less.

Another potential problem is the fact that if the heaters all turn all the way on or all

the way off in unison, then there may be enough noise on the ground line (used by the op-

amp) that the op-amp turns back on (or off). This could set up thermal or electrical

oscillations. A solution would be to have the common point ground off-chip. The non-

heater grounds would be more stable this way.

4.5 Circuit Area

The layout of the temperature control circuit in a pad frame is shown in Figure 10.

The large blue squares are the resistance heaters – made from poly material. The ohms per

square of poly is relatively low, so the physical size of these resistors is relatively large. A

possible solution to the large area taken up by the poly heaters is to make the heater

resistors from n-well material. N-well material has a much higher ohms per square value.

There is, however, the possibility that physically small heaters may cause “hot spots” that

17
 Figure 10: Temperature control circuit in MOSIS pad frame.

place unusual mechanical stress on the die close to the heaters.

4.6 Extra On-chip Diode

An extra diode has been included in the MOSIS layout for testing purposes. The

plan is to use this diode as a temperature-measuring device. A family of diode

characteristic curves (I-V) can be generated such that the temperature of the die can be

measured by passing current through the diode and measuring the potential drop across the

diode. Calibration of this diode will rely on an external standard, such as a highly accurate

thermometer in a variable-temperature oven (in which the die has been placed). The extra

18
diode has its own private pins to the outside world, so it can not interfere with other circuit

components.

4.7 Tradeoffs

There are two important tradeoffs that have been made.

• Small area has been traded for the security of physically large heaters

• ESD protection has been eliminated from the pad frame to allow greater current

5. Applications

Two general areas of application for this circuit exist:

• Any circuit that would benefit from operating at fixed temperature;

• Circuit testing.

A specific example of the first area of application is the voltage-controlled

oscillator (VCO). If a temperature control circuit existed on the same die as a VCO, then

the frequency of oscillation of the VCO would be more constant (since a VCO’s frequency

is temperature dependant, and the temperature would now be constant). Other IC chips on

the same PCB would not be affected (unless they were extremely close to the VCO chip).

An example of the second area (testing) is need for less test equipment. Currently,

if a temperature dependant circuit parameter is to be measured over temperature - the Vos

of an op-amp, for example - some sort of external temperature chamber (oven or air-

forcing unit) is used. With a temperature control circuit on the die, the Vos could be

measured without the need for elaborate test equipment. The test could also take much less

time due to fast time to equilibrium (due to extremely low thermal mass – just the die).

Also, the temperature at which data is taken may be much more precisely known.

19
6. Testing and Results

The basic test plan has one main goal – to see how well the temperature control

circuit compensates for changes in ambient temperature. The basic test procedure will be:

1. Calibrate the extra on-chip diode as a thermometer

2. Seat the voltage on the pin for VSET such that TSET is a few degrees above

ambient and then track heater current (it should drop near TDIE ≈ TSET)

3. Change ambient temperature and monitor how heater current changes

4. After basic characterization, test at least one unit under extreme conditions,

such as very high heater current (take the VDD pin for a heater to high voltage)

Figure 1: Control with ambient above room temperature.

20
Figure 2: Control with ambient above room temperature (different device).

21
Figure 3: Control with ambient below room temperature.

22
Figure 4: Linearity of TSET and VSET.

23
Figure 5: Equilibrium time.

7. Recommendations for Future Work

• Reduce circuit area by using n-well resistors

• Use more (but much smaller) heaters to extend range of control – more heat

available on demand

• Produce accurate, controllable temperature differences across a die by using

more than one of these circuits within one die

8. Summary and Conclusions

• Simulations and tested results show that temperature control at the local level is

possible – the circuit presented here is able to control the temperature of the die

in which it resides

24
• This circuit can be made from commonly available parts in commonly available

processes

• Resolution on temperature control is better than one degree C and may

ultimately be on the order of a few thousandths of a degree C (depending on

whether or not there is a thermal ringing problem)

• Time to thermal equilibrium is on the order of seconds

• This circuit heats the die (does not cool it) and therefore must operate above

ambient

• The range of temperature control is greatly expanded for packages with higher

thermal impedance

• This design may be used to facilitate the functioning of any temperature-

sensitive device or circuit

• This design may be used in the more accurate and speedy testing of circuits

over temperature

25
References

[1] Stubstad, W., “The Application of Thermoelectric Spot Cooling to Electronic

Equipment,” IRE Transactions on Product Engineering and Production, pages 22-29, Dec
1961

[2] Pal, D., Joshi, Y., “Application of phase change materials for passive thermal control of
plastic quad flat packages (PQFP): a computational study,” Eleventh Annual IEEE
Semiconductor Thermal Measurement and Management Symposium, San Jose, Feb. 1995

Acknowledgements

I would like to thank my advisor, Dr. Tamara Papalias, for inspiring me to think
creatively. Without her, I would not have come up with the idea for this project.

I would like to thank my co-advisor, Dr. David Parent, for doing the work
necessary to get a design out to the MOSIS service.

I would like to thank Cadence Design Systems for our design lab.

I would like to thank the MOSIS service for agreeing to put my design into silicon

Lastly, I want to thank my wife and son for allowing me to be gone so much these
last few months. We will reconnect soon.

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