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Abstract—EMTP-type programs include dedicated support “cable constants” (CC). These programs have some shortcom-
routines (cable constants) for calculating an electric representa- ings in representing certain cable features. The paper provides
tion of cable systems in terms of a series impedance matrix guidelines on how to apply CC routines to the most common
and a shunt admittance matrix , based on cable data defined by
geometry and material properties. and are the basic input of types of high-voltage cable systems. The discussion considers
the various cable models that are used in time-domain transient both cables with extruded solid insulation (XLPE, PE) and ca-
simulations. This paper discusses the modeling of high-voltage bles with oil-impregnated paper.
cables: single-core, three-phase, and pipe-type cables. Material
properties are given for commonly used conductive and insulating
materials, and how to represent semiconductive screens, lossy in- II. INPUT DATA
sulation materials, and magnetic armors is shown. The significance
of the grounding condition of sheaths and armors is discussed. The basic equations used to represent overhead lines and in-
In transient calculations, it is always important to accurately
represent the core conductor, insulation, semiconductive layers, sulated cables have the following form:
and the metallic sheath. Frequency-dependent losses of paper-oil
insulation need to be taken into account for very-high-frequency (1)
transients. The significance of conductors external to the cable
depends on the shielding effect of the cable sheath, which depends
(2)
on the sheath design and the frequency content of the transient.
The conclusions are supported by numerical simulation results. where and are, respectively, the series resistance, se-
Index Terms—Insulated cables, modeling, power system tran-
ries inductance, shunt conductance, and shunt capacitance per-
sients, simulation. unit length of the cable system. These quantities are ma-
trices, being the number of (parallel) conductors of the cable
system. The variable reflects that these quantities are calcu-
I. INTRODUCTION lated as function of frequency.
and are calculated by means of CC routines, using cable
S EVERAL line models have been implemented in com-
monly available EMTP-type programs which can accu-
rately represent the frequency dependence of cable systems
geometry and material properties as input parameters. In gen-
eral, users must specify:
[1]–[3]. All of these models require the same type of input pa- 1) Geometry
rameters, namely the series impedance matrix and the shunt • location of each conductor ( - coordinates);
admittance matrix . Sufficiently accurate input parameters • inner and outer radii of each conductor;
are, in general, more difficult to obtain for cable systems than • burial depth of the cable system.
for overhead lines as the small geometrical distances make 2) Material properties
the cable parameters highly sensitive to errors in the specified • resistivity and relative permeability of all conduc-
geometry. In addition, it is not straightforward to represent tors ( is unity for all nonmagnetic materials);
certain features, such as wire screens, semiconductive screens, • resistivity and relative permeability of the surrounding
armors, and lossy insulation materials. The situation is made medium ;
further complicated by uncertainties in the geometrical data • relative permittivity of each insulating material .
as provided by the manufacturer as they define guaranteed The calculation of and from the geometry and mate-
measures, but not necessarily the actual measures. rial properties follows similar steps for all CC routines. The
Most EMTP-type programs have dedicated support routines reader is referred to [4]–[6] for details. The main challenge is
for calculating cable parameters. These routines have very sim- the impedance calculation which is based on computing sur-
ilar features, so hereinafter they will be given the generic name face impedances and transfer impedances of cylindrical metallic
shields, as well as self and mutual ground impedances. CC rou-
Manuscript received March 1, 2004; revised August 9, 2004. Paper no. tines differ in the actual expressions that are used in the calcula-
TPWRD-00106-2004. tion of these quantities. It is worth noting that these routines take
Task Force Members: J. A. Martinez (Chairman), D. Durbak, B. Gustavsen,
B. Johnson, J. Mahseredjian, B. Mork, R. Walling. the skin effect into account but neglect any proximity effects. A
Digital Object Identifier 10.1109/TPWRD.2005.848774 procedure for including proximity effects is given in [7].
0885-8977/$20.00 © 2005 IEEE
2046 IEEE TRANSACTIONS ON POWER DELIVERY, VOL. 20, NO. 3, JULY 2005
TABLE I TABLE II
RESISTIVITY OF CONDUCTIVE MATERIALS RELATIVE PERMITTIVITY OF INSULATION MATERIALS
TABLE III
PARAMETERS OF SEMICONDUCTIVE LAYERS (INDICATIVE VALUES)
TABLE IV
TEST CABLE PARAMETERS
The receiving end voltages are shown in Fig. 8, assuming Fig. 9. Effect of semiconductor thickness on overvoltage.
1-mm semiconductive layers. It can be seen that reducing the
thickness of the lead sheath from 2 to 1 mm leads to a strong simulation is performed with the following representations of
increase of the attenuation, whereas a reduction from 3 to 2 mm the main insulation:
has little effect. This can be understood by considering that
a) Lossless insulation [i.e., dc value in (4)].
the dominant frequency component of the transient is about
b) Lossy insulation by (4).
10 kHz. At this frequency, the penetration depth in lead is
2.4 mm, according to (6). Thus, increasing the thickness of the Fig. 10 shows an expanded view of the initial transient (re-
lead sheath beyond 2.4 mm will not lead to a significant change ceiving) end. It can be seen that the lossy insulation gives a much
in the response. stronger reduction of the peak value for the narrow pulse (2 s)
3) Sensitivity to Semiconductor Thickness: Assuming a than that for the lossless insulation. This reduction is an effect of
0.215-mm Cu sheath, the step response is calculated for dif- both attenuation and frequency-dependent velocity. It is further
ferent thicknesses of the semiconductor layers: 0, 1, 2, 3 mm. seen that the travel time of the lossy insulation is smaller than
The responses in Fig. 9 show that the semiconductors lead to that of the lossless insulation, which is caused by the reduction
a decrease of the propagation speed, as previously explained in in permittivity at high frequencies, according to (4).
Section VIII.
4) Sensitivity to Insulation Losses: In this example, the B. Armored Cable
XLPE main insulation is replaced by paper-oil insulation. It In this example, an armor of 5-mm steel wires and a 5-mm
is further assumed that the cable has a 2-mm lead sheath and outer insulation are incorporated into the cable design. It is fur-
no semiconductive screens. The open-end voltage is calculated ther assumed XLPE main insulation, a 2-mm lead sheath, and
by applying a 2 and a 10- s width square-voltage pulse. The 1-mm semiconductive screens. Only one cable is considered.
2050 IEEE TRANSACTIONS ON POWER DELIVERY, VOL. 20, NO. 3, JULY 2005
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