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I. INTRODUCTION
II. CIRCUIT DESCRIPTION AND OPERATIONS where is the gate transconductance of Mp2 and
The circuit schematic of the new output stage is shown and are drain-to-source resistances of Mp6 and Mp12,
in Fig. 2. The dimensions of relevant transistors are given in respectively. The output resistance of Mn3 has been neglected
Table I. The circuit consists of the positive-half and negative- since it forms the output transistor of a cascode configured
stage and consequently its value is high compared to the drain-
Manuscript received September 26, 1997; revised May 15, 1998. to-source resistances of Mn6 and Mp12. In this configuration,
The author is with the ETA ASIC Design Center and Electronics and Com- the gate voltage of Mp7 can be pulled down to . Therefore,
munication Engineering Department, Istanbul Technical University, Istanbul
80626 Turkey. for a given supply voltage, the highest possible current can be
Publisher Item Identifier S 0018-9200(99)00409-6. obtained through Mp7.
0018–9200/99$10.00 1999 IEEE
108 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 34, NO. 1, JANUARY 1999
TABLE I
COMPONENT SIZES
TABLE II
OPERATIONAL AMPLIFIER PERFORMANCE SUMMARY. SUPPLY
7
VOLTAGE = 5 V, RLOAD = 470
; CLOAD = 100 pF
Fig. 4. Currents drawn from Vdd (IDD) and Vss (ISS) versus input voltage
with a resistive load of 470
.
cal Research Council of Turkey for the fabrication of the [2] J. A. Fisher, “A high performance CMOS power amplifier,” IEEE J.
experimental chips. Solid-State Circuits, vol. SC-20, pp. 70–75, Dec. 1985.
[3] K. Nagaraj, “Large-swing CMOS buffer amplifier,” IEEE J. Solid-State
Circuits, vol. 24, pp. 181–183, Feb. 1989.
REFERENCES [4] T. Sæther, C. Hung, Z. Qi, M. Ismail, and O. Aaserud, “High speed high
[1] K. E. Brehmer and J. A. Wieser, “Large swing CMOS power amplifier,” linearity CMOS buffer amplifier,” IEEE J. Solid-State Circuits, vol. 31,
IEEE J. Solid-State Circuits, vol. SC-18, pp. 624–629, Dec. 1983. pp. 255–258, Feb. 1996.