2SK975

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
 Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-92 Mod

32
D 1

1. Source
G
2. Drain
3. Gate

S
2SK975
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 1.5 A
1
Drain peak current I D(pulse)* 4.5 A
Body to drain diode reverse drain current I DR 1.5 A
Channel dissipation Pch 900 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown V(BR)DSS 60 — — V I D = 10 mA, VGS = 0
voltage
Gate to source breakdown V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0
voltage
Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS — — 100 µA VDS = 50 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1 mA, VDS = 10 V
Static drain to source on state RDS(off) — 0.3 0.4 Ω I D = 1 A, VGS = 10 V *1
resistance
0.4 0.55 Ω I D = 1 A, VGS = 4 V *1
Forward transfer admittance |yfs| 0.9 1.5 — S I D = 1 A, VDS = 10 V *1
Input capacitance Ciss — 140 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 70 — pF f = 1 MHz
Reverse transfer capacitance Crss — 20 — pF
Turn-on delay time t d(on) — 3 — ns I D = 1 A, VGS = 10 V,
Rise time tr — 12 — ns RL = 30 Ω
Turn-off delay time t d(off) — 50 — ns
Fall time tf — 30 — ns
Body to drain diode forward VDF — 0.9 — V I F = 1.5 A, VGS = 0
voltage
Body to drain diode reverse t rr — 45 — ns I F = 1.5 A, VGS = 0,
recovery time diF/dt = 50 A/µs
Note: 1. Pulse test

2
 2SK975

Power vs. Temperature Derating Maximum Safe Operation Area

1.5 10

10 0 µ
10
µs s
Channel Dissipation Pch (W)

PW

1
Drain Current ID (A)

m
=1

s
0m
1.0 1.0

s(
D

1S
C

ho
O

t
pe

)
0.3 ra
tio
n
0.5 0.1 Operation in this area
is limited by RDS (on)

0.03 Ta = 25°C

0.01
0 50 100 150 0.1 0.3 1.0 3 10 30 100
Case Temperature TC (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

5 5
10 V 4.5 V Pulse Test
5V
7V 4V VDS = 10 V
4 4
Pulse Test
Drain Current ID (A)
Drain Current ID (A)

3 3
3.5 V

2 2
3V

1 1
VGS = 2.5 V –25°C
75°C
TC= 25°C

0 2 4 6 8 10 0 1 2 3 4 5
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

3
2SK975

Drain to Source Saturation Voltage Static Drain to Source On State

vs. Gate to Source Voltage Resistance vs. Drain Current

Static Drain to Source on State Resistance

1.0 5
Pulse Test
Pulse Test
Drain to Source Saturation Voltage

0.8 2
VGS = 4 V
2A
1.0

RDS (on) (Ω)

VDS (on) (V)

0.6
0.5
10 V
0.4
1A
0.2
ID = 0.5 A
0.2
0.1

0.05
0 2 4 6 8 10 0.05 0.1 0.2 0.5 1.0 2 5
Gate to Source Voltage VGS (V) Drain Current ID (A)

Static Drain to Source on State Forward Transfer Admittance

Resistance vs. Temperature vs. Drain Current
Static Drain to Source on State Resistance

Forward Transfer Admittance  yfs  (S)

1.0 5
Pulse Test VDS = 10 V –25°C
Pulse Test T = 25°C
ID = 2 A C
0.8 2
1A
0.5 A 1.0
RDS (on) (Ω)

0.6 VGS = 4 V 75°C

0.5
0.4
2 A 0.5 A 0.2
1A
0.2 VGS = 10 V
0.1

0 0.05
–40 0 40 80 120 160 0.05 0.1 0.2 0.5 1.0 2 5
Case Temperature TC (°C) Drain Current ID (A)

4
 2SK975

Body to Drain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage
1000 1000
di/dt = 50 A/µs, Ta = 25°C VGS = 0
Reverse Recovery Time trr (ns)

500 VGS = 0 f = 1 MHz

Pulse Test 300
Ciss

Capacitance C (pF)
200 100
Coss
100 30
Crss
50
10

20 3

10 1
0.05 0.1 0.2 0.5 1.0 2 5 0 10 20 30 40 50
Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

100 20 100
td (off)
Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

VDD = 50 V 50
80 16 tf
Switching Time t (ns)

25 V
10 V VGS = 10 V VDD = 30 V
•

20 •

PW = 2 µs, duty < 1 %

60 12
VDS tr
10
VDD = 50 V VGS
40 8
5
td (on)
20 4
25 V ID = 1.5 A 2
10 V
0 1
0 2 4 6 8 10 0.05 0.1 0.2 0.5 1.0 2 5
Gate Charge Qg (nc) Drain Current ID (A)

5
2SK975

Reverse Drain Current vs.

Source to Drain Voltage
2.0
Pulse Test

Reverse Drain Current IDR (A)

1.6

10 V
1.2 15 V

5V
0.8

VGS = 0, –5 V
0.4

0 0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

6
 Unit: mm

4.8 ± 0.3 3.8 ± 0.3

8.0 ± 0.5
2.3 Max
0.65 ± 0.1
0.75 Max
10.1 Min
0.60 Max
0.7

0.5 ± 0.1 0.5

1.27
2.54

Hitachi Code TO-92 Mod

JEDEC —
EIAJ Conforms
Weight (reference value) 0.35 g
Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd.
(America) Inc. Electronic components Group 16 Collyer Quay #20-00 Group III (Electronic Components)
179 East Tasman Drive, Dornacher Stra§e 3 Hitachi Tower 7/F., North Tower, World Finance Centre,
San Jose,CA 95134 D-85622 Feldkirchen, Munich Singapore 049318 Harbour City, Canton Road, Tsim Sha Tsui,
Tel: <1> (408) 433-1990 Germany Tel: 535-2100 Kowloon, Hong Kong
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0 Fax: 535-1533 Tel: <852> (2) 735 9218
Fax: <49> (89) 9 29 30 00 Fax: <852> (2) 730 0281
Hitachi Europe Ltd. Hitachi Asia Ltd. Telex: 40815 HITEC HX
Electronic Components Group. Taipei Branch Office
Whitebrook Park 3F, Hung Kuo Building. No.167,
Lower Cookham Road Tun-Hwa North Road, Taipei (105)
Maidenhead Tel: <886> (2) 2718-3666
Berkshire SL6 8YA, United Kingdom Fax: <886> (2) 2718-8180
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.