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I VIII
1 2
H He
Hydrogen II III IV V VI VII Helium
Li 3 Be 4 B 5
C 6
N 7
O 8
F 9
Ne 10
Lithium Beryllium Boron Carbon Nitrogen Oxygen Flourine Neon
Na 11 Mg12 Al 13 Si 14
P 15
S 16
Cl 17 Ar 18
Sodium Magnesium Aluminum Silicon Phosphorus Sulfur Chlorine Argon
19
K Ca 20 Ga 31 Ge 32 As 33 Se 34 Br 35 Kr 36
Potassium Calcium Gallium Germanium Arsenic Selenium Bromine Krypton
37 38 49 50 51 52 53
Rb Sr In Sn Sb Te I Xe 54
Rubidium Strontium Indium Tin Antimony Tellurium Iodine Xenon
Cs 55 Ba 56 Tl 81 Pb 82 Bl 83 Po 84 At 85 Rn 86
Cesium Barium Thallium Lead Bismuth Polonium Astatine Radon
Schematic Representation of Silicon Crystal
covalent bond
Si Si Si
valence electron
Si Si Si Si
silicon atom
Si Si Si
Si Si Si
hole
Si Si Si Si
(conduction)
electron
silicon atom
Si Si Si
Si Si Si
hole
Si Si Si Si
electron
silicon atom
Si Si Si
Si P Si
P Si Si Si
phosphorus atom
(donor for silicon) Si Si Si
+
Si P Si
electron
P Si Si Si
phosphorus atom
(donor for silicon) Si Si Si
Si B Si
B Si Si Si
boron atom
(acceptor for silicon) Si Si Si
Si B Si
hole
B Si Si Si
boron atom
(acceptor for silicon) Si Si Si
∂V electric
= -E field
∂x
E-field boudary condition at a dielectric interface:
e1E1 = e2 E2
Mechanisms of Carrier Transport
Drift: movement of charge carriers due to an external field.
electron
electron
current I µ qmE energy
carrier electric voltage
charge carrier field slope µ E
mobility
hole
Diffusion: movement of carriers due to a concentration gradient.
∂N
current I µ qD
∂x
carrier concentration
charge diffusion gradient
constant
D kT
Einstein relation: =
m q
Equilibrium at a Potential Barrier
!y n2
Idrift = qnmE = -qnm diffusion
!x Electron n1 y2
Energy
Dy
!n Voltage
Idiff = qD y1
!x drift
x x1 x2
Idrift + Idiff = 0
!y !n !n !y 1 !n m !y
-qnm + qD = 0 D = nm " = "
!x !x !x !x n !x D !x
x2 x2 n2 y2
1 !n 1 !y dn 1
Ú " dx =
n !x
Ú
UT x1 !x
dx Ú n
= Ú dy
UT y1
x1 n1
n 2 y2 - y1 n2
= e (y 2 -y1 ) T
U
log =
n1 UT n1
Boltzmann distribution
Generation and Recombination
p– n
p– n
depletion E-field
region line
Electron
Energy
Voltage V = 0
Electrostatics of a pn Junction
p– n
depletion E-field
region line
Electron
Energy
Voltage V = 0 built-in
y0 potential
d
depletion
region width
Equilibrium in a pn Junction
p– n
diffusion
EC dri
ft
Electron
Energy y0
Voltage EF
EV
dr
ift
diffusion
Equilibrium in a pn Junction
p– n
diffusion
dri
EC ft
Electron y<y0
Energy
Voltage EF
EV
dr
ift
diffusion
Equilibrium in a pn Junction
p– n
diffusion
EC dri
ft
Electron
Energy y>y0
Voltage EF
EV
dr
ift
diffusion
Reverse-Biased pn Junction
p– n
V=0 built-in
Electron potential
Energy y0
Voltage d
depletion
region width
Reverse-Biased pn Junction
V
p– n
V=0
Electron
Energy V + y0
Voltage
d
Reverse Junction Leakage Current
V
p– n
EC
Electron
Energy
Voltage EF
EV V
generation
Electrostatics of the MOS Structure
VG = Vfb
p–
Electron
Energy
Voltage V = 0 VG = Vfb
Electrostatics of the MOS Structure
VG>Vfb
p–
yox
Electron
Energy
ys
Voltage V = 0 Vfb =
VG-Vfb
VG
d
depletion
region width
Electrostatics of the MOS Structure
VG>Vfb
p–
yox
Electron
Energy
ys
Voltage V = 0 Vfb =
VG-Vfb
d VG
depletion
region width
Electrostatics of the MOS Structure
VG>Vfb
p–
yox
Electron
Energy
Voltage V = 0 ys Vfb =
VG-Vfb
d
depletion VG
region width
Electrostatics of the MOS Structure
VG>Vfb
p–
yox
Electron
Energy
Voltage V = 0 ys Vfb =
VG-Vfb
d
depletion VG
region width
Electrostatics of the MOS Structure
VG>Vfb
p–
yox
Electron
Energy
Voltage V = 0 ys Vfb =
VG-Vfb
d
depletion VG
region width
Electrostatics of the MOS Structure
n+
Vfb
p–
Electrostatics of the MOS Structure
n+
VG
p–
Electrostatics of the MOS Structure
n+
VG
p–
Electrostatics of the MOS Structure
n+
VG
p–
Electrostatics of the MOS Structure
n+
VG
p–
Electrostatics of the MOS Structure
n+
VG
p–
Electrostatics of the MOS Structure
n+
VG
p–