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OCET-2009

Code No.: 209101


Important : Please consult your Admit Card / Roll No. Slip before filling your Roll Number on the Test Booklet
and Answer Sheet .
Roll No. In Figures In Words

O.M.R. Answer Sheet Serial No.


Signature of the Candidate :
Subject : M.Tech. (Microelectronics)
Time : 90 minutes Number of Questions : 75 Maximum Marks : 75
DO NOT OPEN THE SEAL ON THE BOOKLET UNTIL ASKED TO DO SO
INSTRUCTIONS
1. Write your Roll No. on the Question Booklet and also on the OMR Answer Sheet in the space provided
and nowhere else.
2. Enter the Subject and Code No. of Question Booklet on the OMR Answer Sheet. Darken the
corresponding bubbles with Black Ball Point / Black Gel pen.
3. Do not make any identification mark on the Answer Sheet or Question Booklet.
4. To open the Question Booklet remove the paper seal (s) gently when asked to do so.
5. Please check that this Question Booklet contains 75 questions. In case of any discrepancy, inform the
Assistant Superintendent within 10 minutes of the start of test.
6. Each question has four alternative answers (A, B, C, D) of which only one is correct. For each question,
darken only one bubble (A or B or C or D), whichever you think is the correct answer, on the Answer Sheet
with Black Ball Point / Black Gel pen.
7. If you do not want to answer a question, leave all the bubbles corresponding to that question blank in the
Answer Sheet. No marks will be deducted in such cases.
8. Darken the bubbles in the OMR Answer Sheet according to the Serial No. of the questions given in the
Question Booklet.
9. Negative marking will be adopted for evaluation i.e., 1/4th of the marks of the question will be deducted
for each wrong answer. A wrong answer means incorrect answer or wrong filling of bubble.
10. For calculations, use of simple log tables is permitted. Borrowing of log tables and any other material is not
allowed.
11. For rough work, only the sheets marked “Rough Work” at the end of the Question Booklet be used.
12. The Answer Sheet is designed for computer evaluation. Therefore, if you do not follow the instructions
given on the Answer Sheet, it may make evaluation by the computer difficult. Any resultant loss to the
candidate on the above account, i.e., not following the instructions completely, shall be of the
candidate only.
13. After the test, hand over the Question Booklet and the Answer Sheet to the Assistant Superintendent on duty.
14. In no case the Answer Sheet, the Question Booklet, or its part or any material copied/ noted from this
Booklet is to be taken out of the examination hall. Any candidate found doing so would be expelled from
the examination.
15. A candidate who creates disturbance of any kind or changes his/her seat or is found in possession of any
paper possibly of any assistance or found giving or receiving assistance or found using any other unfair
means during the examination will be expelled from the examination by the Centre Superintendent/
Observer whose decision shall be final.
16. Telecommunication equipment such as pager, cellular phone, wireless, scanner, etc., is not
permitted inside the examination hall. Use of calculators is not allowed.
M.Tech. (Microelectronics)/209101
1. In semiconductor electronics, which of the following statement is true ?
(A) Holes are heavier than electrons
(B) Holes are lighter than electrons
(C) Holes and electrons have equal effective mass
(D) Holes have higher mobility than electrons
2. GaAs is preferred over silicon in LED fabrication because :
(A) GaAs is indirect band gap and silicon is direct band gap semiconductor
(B) GaAs is direct band gap and silicon is indirect band gap semiconductor
(C) GaAs is not a semiconductor
(D) Electrons are less mobile in GaAs as compared to silicon
3. The fermi energy level in an n-type semiconductor lies :
(A) In the middle of the energy band (B) Near the valence band
(C) Near the conduction band (D) On the valence band
4. Which one of the following is true about TEM ?
(A) Uses very thick samples
(B) Is used for element analysis
(C) Is used for determining inner crystal defects and structure
(D) Is a low energy phenomenon as compared to SEM
5. The incident electron energy in a TEM is generally in the range of :
(A) 1-10 KeV (B) 50-100 KeV
(C) 10-30 MeV (D) 10-30 eV
6. XRD is primarily used to determine :
(A) The crystal structure (B) The surface topography
(C) The wavelength of X-rays (D) The elements present in the sample
7. Atomic force microscope works on the principle of
(A) Van der Waals forces of interaction (B) Quantum mechanical tunneling
(C) Magnetic forces of interaction (D) Low energy electron diffraction
8. The primary application of an AFM is to :
(A) Understand the surface atomic structure
(B) Determine the electron energy
(C) Determine the inner surface details
(D) Determine the heavy metals present inside the material
9. Which one of the following statements is true about STM ?
(A) STM is used for insulating materials
(B) STM is used for conductive materials
(C) STM uses X-rays for material analysis
(D) STM is based on Van der Waals forces of interaction

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10. Which one of the following statements is true for SEM ?
(A) SEM is used for determination of surface topography
(B) SEM is used for determination of crystal structure using X-rays
(C) SEM is used for elemental analysis
(D) SEM uses more electron energy than TEM for material analysis
11. Four probe method is used for :
(A) Inductance measurement (B) Dielectric Constant measurement
(C) Capacitance measurement (D) Bulk resistivity measurement
12. In microelectronics terminology, in general :
(A) MNOS and NMOS are the same (B) 1nm = 10–6 m
(C) Al2O3 and SiO2 are semiconductors (D) Si, Ge, InP and GaAs are semiconductors
13. MNOS is a/an
(A) Semiconductor memory (B) Digital inverter
(C) Amplifier (D) Transmission gate
14. The following is an ion based technique :
(A) SIMS (B) SEM
(C) TEM (D) STEM
15. Narrow channel effects in a MOSFET cause
(A) Increase of threshold voltage (B) Decrease of threshold voltage
(C) No effect on threshold voltage (D) Both increase and decrease of threshold voltage
16. KOVAR is a :
(A) IC Process (B) Design tool
(C) Packaging material (D) Some MOSFET model
17. Hetero-junction bipolar transistors have
(A) Wide band gap emitter and narrow band gap base
(B) Wide band gap base and narrow band gap emitter
(C) Wide band gap base and emitter
(D) Narrow band gap base and emitter
18. Static RAMs store data on the basis of
(A) Regenerative action (B) Quantum Mechanical Tunneling process
(C) Fowler Nordhiem tunneling process (D) Electronic Polarization
19. Ferroelectric dynamic memories are based on the principle of :
(A) Spontaneous Polarization (B) Quantum Mechanical Tunneling process
(C) Set-Reset operation (D) Latching action
20. HiSIM is a
(A) Surface potential MOSFET model (B) Charge based MOSFET model
(C) An Analytical instrument (D) VLSI Packaging material

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21. In a MOSFET, the inversion condition in general means :
(A) Surface potential is more than twice that of Fermi potential
(B) Surface potential is equal to Fermi potential
(C) Surface potential is less than Fermi potential
(D) Surface potential has no relation with Fermi potential
22. Which one of the following is used as a photoresist material in IC fabrication ?
(A) SIMS (B) PMMA
(C) H2SO4 (D) KNO 3
23. Latch up problem in Integrated Circuits is minimized using :
(A) Bulk silicon technology (B) Guard ring technology
(C) SiGe technology (D) CMOS technology
24. Lateral diffusion is caused mainly due to :
(A) Defects in a crystal (B) Anisotropic nature of diffusion
(C) Impurities in diffusing material (D) Isotropic nature of diffusion.
25. To increase electron mobility in a Silicon based n-MOSFET, which of the following material is used in
the substrate ?
(A) SiGe (B) Al2O3
(C) HfO2 (D) SiO2
26. EKV is :
(A) An analytical instrument used in surface imaging
(B) A MOSFET model used for low power analog IC applications
(C) A first generation SPICE MOSFET model
(D) A Japanese MOSFET model
27. Channel length modulation refers to :
(A) A type of modulation technique in communication systems
(B) A short channel effect leading to higher drain current in saturation region of a MOSFET
(C) A short channel effect leading to lower drain current in saturation region of a MOSFET
(D) An effect in P-N junction diodes
28. Which one of the following statements is true about RSCE in MOSFETs ?
(A) RSCE are due to nonuniform doping in the substrate
(B) RSCE are due to uniform doping in the channel
(C) RSCE result in decrease in threshold voltage
(D) RSCE have no effect on threshold voltage
29. The drain current of a MOSFET in saturation region in the presence of high energy radiation :
(A) Is more than the drain current without radiation
(B) Is less than the drain current without radiation
(C) Remains same
(D) First increases and then decreases
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30. Which one of the following sequence about dielectric constants is true ?
(A) Si3N4 > Al2O3 > La2O3 (B) Si3N4 < Al2O3 < La2O3
(C) Al2O3 < Si3N4 < La2O3 (D) Al2O3 > La2O3 > Si3N4
31. The angle of incidence of electron beam with the substrate in RHEED is :
(A) <5º (B) >90º
(C) 45º (D) 75º
32. Routing in VLSI means in general :
(A) Placing of cells in a layout
(B) Placing of interconnections in a Layout
(C) A VLSI circuit functional testing technique
(D) Modeling of some parameters of a MOSFET
33. BSIM 5 is
(A) A MOSFET model (B) An analytical instrument
(C) A bipolar transistor model (D) A VLSI testing technique
34. Arrange the following dielectrics in terms of their Band gaps (eV)
(A) TiO2 > ZrO2 > Y2O3 (B) ZrO2 < TiO2 < Y2O3
(C) TiO2 < Y2O3 < ZrO2 (D) TiO2 > Y2O3> ZrO2
35. AES is mainly used for :
(A) Elemental analysis (B) Crystallography
(C) Surface studies (D) Inner details of the material
36. Which of the following technique in general, is not used for thickness measurement of a semiconductor
sample ?
(A) Absorption technique (B) Ellipsometry technique
(C) Interference technique (D) AAS
37. Dynamic power dissipation in a digital circuit refers to :
(A) Switching activity of the digital circuit (B) Sub threshold power dissipation
(C) Source to drain tunneling leakage (D) Oxide leakage
38. What is the effect of poly-silicon depletion on a MOSFET ?
(A) Causes decreased inversion charge density in a MOSFET substrate
(B) Causes increased inversion charge density in a MOSFET substrate
(C) Causes increased gate capacitance in a MOSFET
(D) Has no effect on inversion charge density and gate capacitance in a MOSFET
39. Which one of the following is the unmaskable interrupt ?
(A) INTR (B) TRAP
(C) RST6.5 (D) RST5.5

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40. High k dielectrics in place of silicon dioxide in a MOSFET :
(A) Decrease the Quantum mechanical tunneling current density
(B) Increase the Quantum mechanical tunneling current density
(C) Has no effect on the Quantum mechanical tunneling current density
(D) Increase both the gate capacitance and the Quantum mechanical tunneling current density
41. If an IC has 200 gates, the technology will be called as :
(A) SSI (B) MSI
(C) LSI (D) VLSI
42. The cascade circuit refers to :
(A) Common Emitter-Common Emitter (B) Common Collector-Common Collector
(C) Common Emitter-Common Base (D) Common Emitter-Common Collector
43. SIMOX process is :
(A) An epitaxial process (B) A diffusion process
(C) Implantation of oxygen in silicon (D) A crystal growth process
44. Under all identical operating conditions, wet oxidation is faster than dry oxidation because :
(A) The larger diffusion constant of water molecule than the oxygen molecule
(B) The smaller diffusion constant of water molecule than the oxygen molecule
(C) The same diffusion constant of water molecule and the oxygen molecule
(D) Has nothing to do with diffusion constants of water molecule and the oxygen molecule
45. Which of the following property of Plasma is true ?
(A) Electrical resistance as zero (B) Electrical resistance as infinite
(C) It is having positive charge (D) It is having negative charge
46. Which of the following statements is true for a BJT and a MOSFET ?
(A) BJT is a current controlled device and MOSFET is a voltage controlled device
(B) Both BJT and MOSFET are voltage controlled devices
(C) Both BJT and MOSFET are current controlled devices
(D) BJT is a voltage controlled device and MOSFET is a current controlled device
47. Darlington pair consists of
(A) Two common collector transistors in cascade
(B) Two common emitter transistors in cascade
(C) Two common base transistors in cascade
(D) One common collector and one common base transistor in cascade
48. Which one of the following statements is true about non volatile memories ?
(A) They retain data after power is switched off
(B) Nonvolatile memory includes SRAM
(C) They lose data after power is switched off
(D) Nonvolatile memory includes DRAM

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49. Annealing in semiconductor layers is done to :
(A) Convert amorphous layers to crystalline layers
(B) Grow oxide layers
(C) Deposit metallic layers
(D) Rectify the damage done by diffusion
50. Which is a popular ferroelectric material ?
(A) PZT (B) Ge
(C) Al (D) GaAs
51. A package and a die can be connected by using :
(A) Solder bump process (B) Lithography process
(C) Metallization process (D) Etching process
52. Which of the following statements is true about DIBL ?
(A) It is due to high drain to source voltage at small gate lengths
(B) It is due to low drain to source voltage at large gate lengths
(C) It results in higher threshold voltage
(D) It is dominant at large gate lengths
53. Electron mobility reduces in short channel MOSFETs because of
(A) Large electric fields in the channel (B) Small electric fields in the channel
(C) Electron tunneling from source to drain (D) Electron tunneling from source to substrate
54. When an npn CE bipolar transistor is said to be in cut off state ?
(A) Base/emitter and base/collector junctions are reverse biased
(B) Base/emitter and base/collector junctions are forward biased
(C) Base/emitter is forward biased and base/collector junction is reverse biased
(D) Base/emitter is reverse biased and base/collector junction is forward biased
55. To achieve high gain in MOSFET based analog circuits, the following are required :
(A) Low gate overdrive voltage and large channel length
(B) High gate overdrive voltage and large channel length
(C) Low gate overdrive voltage and low channel length
(D) High gate overdrive voltage and low channel length.
56. Flash memories are based on
(A) Latching principle (B) Polarization principle
(C) Floating gate tunneling process (D) Change in crystal structure
57. 1T DRAM has
(A) Write, Read and refresh operations (B) Write and Read operations
(C) Read and refresh operations (D) Write and refresh operations

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58. A 6T SRAM Cell consists of :
(A) Four pass transistors and two memory cell transistors
(B) Two pass transistors and four memory cell transistors
(C) Three pass transistors and three memory cell transistors
(D) Two pass transistors and two memory cell transistors
59. Which one of the following is not a die attachment technique in VLSI packaging ?
(A) Wire bonding (B) TAB
(C) C 4 process (D) Etching process
60. When a reverse bias of 2V is applied to P-N junction silicon diode, the effective barrier potential is :
(A) 2.7 V (B) 2.0 V
(C) 0.7 V (D) 0 V
61. Which class of amplifiers operates with maximum distortion ?
(A) Class A (B) Class B
(C) Class C (D) Class AB
62. Which of the following law helps to estimate pins in a VLSI package ?
(A) Ohm’s law (B) Rent’s law
(C) Hook’s law (D) Fick’s law
63. In IC technology, MBE is :
(A) An epitaxial process (B) A diffusion process
(C) A Lithography technique (D) An Ion implantation process
64. When the npn CE bipolar transistor is operating in inverse condition ?
(A) Base/emitter and base/collector junctions are reverse biased
(B) Base/emitter and base/collector junctions are forward biased
(C) Base/emitter is forward biased and base/collector junction is reverse biased
(D) Base/emitter is reverse biased and base/collector junction is forward biased
65. A tunnel diode and a Zener diode operate in one of the following conditions :
(A) Forward bias and reverse bias respectively (B) Reverse bias and forward bias respectively
(C) Both reverse bias (D) Both forward bias
66. Which of the following is true for the depletion width in a P-N Junction diode ?
(A) It increases with increase in reverse bias
(B) It decreases with increase in reverse bias
(C) Is independent of reverse bias
(D) It increases with increase in doping concentration
67. Which one of the following is not a compact MOSFET model ?
(A) Physical model (B) Table lookup model
(C) Empirical model (D) Numerical model

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68. The reverse saturation current in a P-N junction diode
(A) Increases with increase in temperature (B) Decreases with forward biasing voltage
(C) Increases with reverse biasing voltage (D) Has no temperature dependence
69. The contact potential in a Schottky diode is generally of the order of :
(A) 700 mV (B) 750 mV
(C) 350 mV (D) 0 mV
70. A tunnel diode operates on the principle of :
(A) Quantum Mechanical tunneling (B) Drift-Diffusion Mechanism
(C) Avalanche breakdown (D) Conversion of crystalline state
71. Which of the following is true for a p-type semiconductor ?
(A) Is positively charged
(B) Is negatively charged
(C) Is neutral
(D) Conductivity is more than an n-type semiconductor
72. Which one of the following statements in general is true about an intrinsic semiconductor ?
(A) It has more holes than electrons at room temperature
(B) Its conductivity increases with the doping of n-type impurities
(C) Its conductivity decreases with the doping of n-type impurities
(D) It behaves like a conductor at absolute zero
73. The correct order of the electron mobility in the following semiconductors is :
(A) GaAs > Si > Ge (B) GaAs < Si < Ge
(C) GaAs > Ge > Si (D) Si > GaAS > Ge
74. The process of adding impurities at very high temperature in a semiconductor is called as
(A) Diffusion process (B) Ion Implantation process
(C) Ionization process (D) Epitaxial process
75. Which of the following is not a negative resistance device ?
(A) Gunn Diode (B) Tunnel Diode
(C) Bipolar Transistor (D) IMPATT

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