NOORUL ISLAM COLLEGE OF ENGINEERING, KUMARACOIL

Electrical and Electronics Engineering

ThirdSemester
EC1121 - Electronic Devices

PART A

1. What is atomic number?

The number of protons or electrons in an atom is atomic number.
2. What is the relation for the maximum number of electrons in each shell?
Ans: 2n2
3. What are valence electrons?
Electron in the outermost shell of an atom is called valence electron.
4. What is forbidden energy gap?
The space between the valence and conduction band is said to be forbidden
energy gap.
5. What are conductors? Give examples?
`Conductors are materials in which the valence and conduction band overlap
each other so there is a swift movement of electrons which leads to conduction.
Ex. Copper, silver.
6. What are insulators? Give examples?
Insulators are materials in which the valence and conduction band are far away
from each other. So no movement of free electrons and thus no conduction.
Ex glass, plastic.
7. What are Semiconductors? Give examples?
The materials whose electrical property lies between those of conductors and
insulators are known as Semiconductors. Ex germanium, silicon.
8. What are the types of Semiconductor?
1. Intrinsic semiconductor 2. Extrinsic semiconductor.
9. What is Intrinsic Semiconductor?
Pure form of semiconductors are said to be intrinsic semiconductor. Ex
germanium, silicon.
10. What is Extrinsic Semiconductor?
If certain amount of impurity atom is added to intrinsic semiconductor the
resulting semiconductor is Extrinsic or impure Semiconductor.
11. What are the types of Extrinsic Semiconductor?
1. P-type Semiconductor 2. N- Type Semiconductor.
12. What is P-type Semiconductor?
The Semiconductor which are obtained by introducing pentavalent impurity atom
(phosphorous, antimony) are known as P-type Semiconductor.
13. What is N-type Semiconductor?
The Semiconductor which are obtained by introducing trivalent impurity atom
(gallium, indium) are known as N-type Semiconductor.

14. What is doping?

Process of adding impurity to an semiconductor atom is doping. The impurity is
called dopant.
15. Which is majority and minority carrier in N-type Semiconductor?
majority carrier: electron and minority carrier: holes.
16. .which is majority and minority carrier in P-type Semiconductor?
Majority carrier: holes and minority carrier: electron
17. What is depletion region in PN junction?
The diffusion of holes and electrons will result in difference in concentration
across the junction which in turn results in the movement of the mobile charge
carriers to the junction thus resulting in a region called depletion region.
18. What is barrier voltage?
Because of the oppositely charged ions present on both sides of PN junction an
electric potential is established across the junction even without any external
voltage source which is termed as barrier potential.
19. What is meant by biasing a PN junction?
Connecting a PN junction to an external voltage source is biasing a PN junction.
20. What are the types of biasing a PN junction?
1. Forward bias 2. Reverse bias.
21. What is forward bias and reverse bias in a PN junction?
When positive of the supply is connected to P type and negative to N type then it
is forward bias. When positive of the supply is connected to N type and negative
to P type then it is reverse bias.
22. What is Reverse saturation current?
The current due to the minority carriers in reverse bias is said to be reverse
saturation current.
23. What is reverse break down?
During reverse bias after certain reverse voltage the current through the junction
increases abruptly thus breaking the crystal which is termed as reverse break
down.
24. Give the diode current equation?
I = I0. (ev/ή.Vt-1)
25. Give two applications of PN junction diode.
1. As rectifier in power supplies.
2. as switch in logic circuits
PART B

1. What are semiconductors? Explain the types of semiconductors?

Definition of semiconductor (2 marks)
Types (2 marks)
Intrinsic semiconductor explanation with diagram (4marks)
Extrinsic semiconductor –types, explanation with diagram (6marks)

2. Explain the construction, working, characteristics of PN junction

diode?
Construction explanation with diagram (4 marks)
Working (2 marks)
 Forward characteristics explanation with diagrams (5marks)
Reverse characteristics explanation with diagrams (5marks)

3. Derive the diode current equation (8marks)

Relation for forward biased diode (4marks)
Relation for forward biased diode (4marks)
Expansion of all terms in the equation is to be provided.

4. Give the construction, working of a transistor? (8marks)

Construction explanation with diagram (4 marks)
Working with diagram (4 marks)

5. Give the relationship between current gain α and β? (6marks)

Relation of α in term of β (3 marks)
Relation of β in terms of α (3 marks)

6. Explain the characteristics of transistor in common emitter

configuration (or) in common base configuration (or) common
collector configuration (8marks)
Circuit arrangement for determining the characteristics (2 marks)
Explanation (2 marks)
Input characteristics (2 marks)
Output characteristics (2marks)

7. Explain the FET type, construction, working, characteristics?

About FET and its types (2marks)
JFET diagram, operation, characteristics (7marks)
MOSFET diagram, operation, characteristics (7marks)

8. Explain in detail the IC fabrication technique?

Fabrication of an active device (ex transistor) is to be taken as example
and then is to be explained with all process involved with diagrams .Each
process explained will carry marks according to the importance of the
process.

UNIT-V

PART A
1. What is the static resistance of a diode?
Static resistance R of a diode can be defined as the ratio of voltage V across the diode to
the
current flowing through the diode.
R = V/ I
Where
R - Static resistance of a diode
V - Voltage across the diode
 I - current across the diode
2 . Define dynamic resistance.
Dynamic resistance of a diode can be defined as the ratio of change in voltage across the
diode to the change in current through the diode.
r =∆V/∆I
Where
r - Dynamic resistance of a diode
∆ V - change in voltage across the diode
∆ I - change in current through the diode
3. Define dynamic conductance.
Dynamic conductance of a diode can be defined as the ratio of change in the change in
current through the diode to the voltage across the diode. This can also be defined as the
inverse of Dynamic resistance.
g = ∆ I / ∆ V = I + I0 / ή vT
Where
g - Dynamic conductance of a diode
∆ V - change in voltage across the diode
∆ I - change in current through the diode
vT – threshold voltage
4. Define the term transition capacitance?
When a PN junction is reverse biased, the depletion layer acts like a dielectric material
while P and N –type regions on either side which has low resistance act as the plates. In
this way a reverse biased PN junction may be regarded as parallel plate capacitor and
thus the capacitance across this set up is called as the transition capacitance.
CT = εA / W
Where
CT - transition capacitance
ε - Permittivity of material
A - Cross section area of the junction
W – Width of the depletion region
5. Define Alloy junction.
A junction formed experimentally in which there is an abrupt change from acceptor ions
on one side to donor ions on the other side is called as an alloy or fusion junction.
6. Define Grown junction.
A junction obtained by drawing a single crystal from a melt of germanium whose type is
changed during the drawing process by adding first P-type and then n –type impurity is
called as grown junction.
7. Give the Poisson’s equation relating the potential and the charge density?
d2V / dx2 = e NA / ε
Where
V – Potential
e - Charge of the electron
NA – acceptor ion concentration
ε - Permittivity of material
8. What is a varactor diode?
A diode which is based on the voltage variable capacitance of the reverse biased p-n
junction is said to be varactor diode. It has other names such as varicaps, voltacaps.
9. Define the term diffusion capacitance.
The diffusion capacitance of a forward biased diode is defined as the rate of change of
injected charge with voltage.
CD = τ I / ή VT
Where
τ – time constant
I – current across the diode
vT – threshold voltage
10. Give the expression for charge control description of a diode.
Charge control description of a diode can be given by
I = Q /τp
Where
I – current across the diode
Q – stored charge
τp - L2p / Dp – life time for holes
11. what is recovery time? Give its types.
When a diode has its state changed from one type of bias to other a transient accompanies
the diode response, i.e., the diode reaches steady state only after an interval of time “ t r”
called as recovery time. The recovery time can be divided in to two types such as
(i) forward recovery time
(ii) reverse recovery time
12. What is meant by forward recovery time?
The forward recovery time may be defined as the time interval from the instant of 10%
diode voltage to the instant this voltage reaches 90% of the final value. It is represented
as t f r.
13. What is meant by reverse recovery time?
The reverse recovery time can be defined as the time required for injected or the excess
minority carrier density reduced to zero , when external voltage is suddenly reversed.
14. Define storage time.
The interval time for the stored minority charge to become zero is called storage time. It
is represented as t s.
15. Define transition time.
The time when the diode has normally recovered and the diode reverse current reaches
reverse saturaton current I0 is called as transition time. It is represented as t t
16. What are break down diodes?
Diodes which are designed with adequate power dissipation capabilities to operate in the
break down region are called as break down or zener diodes.

17. What is break down? What are its types?

When the reverse voltage across the pn junction is increased rapidly at a voltage the
junction breaks down leading to a current flow across the device. This phenomenon is
called as break down and the voltage is break down voltage. The types of break down are
i) zener break down
ii)Avalanche breakdown
18. What is zener breakdown?
Zener break down takes place when both sides of the junction are very heavily
doped and
Consequently the depletion layer is thin and consequently the depletion layer is tin.
When a small
value of reverse bias voltage is applied , a very strong electric field is set up across the
thin depletion
layer. This electric field is enough to break the covalent bonds. Now extremely large
number of free
charge carriers are produced which constitute the zener current. This process is known
as zener
break down.
19. What is avalanche break down?
When bias is applied , thermally generated carriers which are already present in the
diode acquire
sufficient energy from the applied potential to produce new carriers by removing
valence electron
from their bonds. These newly generated additional carriers acquire more energy from
the potential
and they strike the lattice and create more number of free electrons and holes. This
process goes
on as long as bias is increased and the number of free carriers get multiplied. This process
is termed
as avalanche multiplication. Thus the break down which occur in the junction resulting in
heavy flow
of current is termed as avalanche break down.
20. How does the avalanche breakdown voltage vary with temperature?
In lightly doped diode an increase in temperature increases the probability of collision
of electrons
and thus increases the depletion width. Thus the electrons and holes needs a high voltage
to cross
the junction. Thus the avalanche voltage is increased with increased temperature.
21. How does the zener breakdown voltage vary with temperature?
In heavily doped diodes, an increase in temperature increases the energies of valence
electrons, and hence makes it easier for these electrons to escape from covalent bonds.
Thus less voltage is sufficient to knock or pull these electrons from their position in the
crystal and convert them in to conduction electrons. Thus zener break down voltage
decreases with temperature.
22. What is a tunnel diode?
The tunnel diode is a pn junction diode in which the impurity concentration is greatly
increased about 1000 times higher than a conventional PN junction diode thus yielding a
very thin depletion layer. This diode utilizes a phenomenon called tunneling and hence
the diode is referred as tunnel diode.
23. What is tunneling phenomenon?
The phenomenon of penetration of the charge carriers directly though the potential
barrier instead of climbing over it is called as tunneling.
24. what is backward diode?
The backward diode is a diode in which the doping level is moderate. The forward
current in this case is very small, very much similar to that of the reverse current in the
conventional diode.
25. what is a photo diode?
The photo diode is a diode in which the current sensitivity to radiation can be made much
larger by the use of the reverse biased PN junction. Thus this diode conducts heavily in
the reverse bias when there is some radiaton allowed to fall on the PN junction.
26. what is a LED?
A PN junction diode which emits light when forward biased is known as Light emitting
diode (LED).
 Part - B
1. Define the term transition capacitance and derive the relation for the same.
Maximum mark for this question:12 marks
Definition (2 marks)
transition capacitance in Alloy junction (6marks)
Explanation of alloy junction formation
Diagram of charge density and potential variation
Derivation of transition capacitance
transition capacitance in grown junction (4 marks)
Explanation of grown junction formation
Diagram of charge density
Derivation of transition capacitance

2. Define dynamic conductance and derive the relation for the same.
Maximum mark for this question: 8 marks
Definition (2 marks)
Explanation of concept involved (2marks)
Derivation of transition capacitance ( 4marks)

3. Explain the charge control description of a diode.

Maximum mark for this question: 6 marks
Explanation of concept involved (2marks)
Derivation of relation involved (4 marks)

4. Explain the switching characteristics of a diode.

Maximum mark for this question: 12 marks
Definition of recovery time (2 marks)
Forward recovery time (2 marks)
Reverse recovery time (2 marks)
Diagram of minority carrier density is necessary to explain the both recovery times
Storage and transition time (6marks )
Explanation of the concept with the wavefoms in a diode is necessary
Definition of both Storage and transition time is also necessary.

5. What is break down in diode? What are its types?

 Maximum mark for this question: 6 marks
Definition of break down and explanation (2 marks)
Zener break down (2 marks)
Avalanche break down (2 marks).

n-type semiconductor is known as PNP transistor.

A transistor in which two blocks of n-type semiconductors are separated by a thin layer
of p-type semiconductor is known as NPN transistor.
4) Why NPN transistor is preferred over PNP transistor?
Most of the transistor are NPN type and not PNP type because in NPN transistors the
current conduction is made by electrons whereas in PNP transistors the current
conduction is mainly by holes, as the electrons are more mobile than holes we can have
high conduction in NPN transistors.
5) What are the terminals present in a transistor?
Three terminals: emitter, base, collector.
6) Which of the terminal is heavily doped & which is lightly doped in BJT?
Emitter- heavily doped & Base- lightly doped.
7) Why base is very thin in BJT?
Transistor consists of three portions namely emitter, base and collector. Base forms the
middle portion. It is very thin and lightly doped because it allows most of the emitter
current carried towards the collector. Since base is acting as an interface it doesn’t need
more area.
8) Give the circuit symbol of transistor?

9) Define Emitter Efficiency or injection efficiency (γ)?

The ratio of current of injected carriers at emitter junction to the total emitter current is
defined as Emitter Efficiency.
In PNP transistor γ = IPE \ IE
10) Define transport factor β*?
The ratio of injected carrier current reaching the collector junction to the injected carrier
current at the emitter junction is called as Transport factor.

11) Define current gain of a transistor?

The ratio of transistor output current to the input current is called current gain of a
transistor.

12) Define common base emitter DC current gain (α)?

It is the ratio of collector current (IC) to emitter current ( IE ).
 α = IC\ IE
13) Define common emitter DC current gain (β)?
It is the ratio of collector current (IC) to base current ( IB ).
β= IC\ IB
14) Give the relationship between α and β ?
α = β / β +1;
β = α / 1- α
15) What is meant by Base spreading resistance?

UNIT-IV

1) What is FET?
FET is abbreviated for field effect transistor. It is a three terminal semiconductor device
in which current conduction is by one type of carriers and its output characteristics
controlled by input voltage.

2) Why Field effect transistor is so called?

The FET is a device in which the flow of current through the conduction region is
controlled by an electric field. Hence the name field effect transistor.
3) Why FET is called unipolar device?
Since the operation of FET depends upon the flow of majority carriers (either electron or
holes) only, the FET is said to be unipolar device.
4) Why FET is called voltage controlled device?
The output characteristics of FET is controlled by its input voltage thus it is voltage
controlled.
5) What are the two main types of FET?
1. JFET 2. MOSFET.
6) What are the terminals available in FET?
1. Drain 2. Source 3. Gate
7) Define pinch off voltage in FET.
Pinch off voltage is the minimum drain to source voltage above which the drain current
becomes almost constant.
8) Define gate source threshold voltage of a FET.
It is the voltage where the drain current becomes zero and the channel is completely cut
off.
9) Give the Shockly’s equation for FET.
The shockly’s equation gives the relation between drain current (ID) in the pinch off
region and the gate to source voltage VGS.
ID = IDSS [1- VGS/ Vp]2
Where
IDSS – maximum value of drain current when VGS = 0
Vp - pinch off voltage
10) What is JFET?
JFET- Junction field effect transistor.
11) What are the types of JFET?
1. N- channel JFET 2. P- Channel JFET
12) Give the construction of N-channel JFET.

13) Give the construction of P-channel JFET.

14) Give the symbol of N-channel and P-channel JFET.

15) Give the construction of Depletion type MOSFET.

16) Give the circuit symbol of Depletion type MOSFET.

17) What are the two important characteristics of JFET?

1. Drain characteristics 2. Transfer characteristics.
18) Name the special features of a FET.
i) high input resistance ii) low noise iii) better thermal stability iv) high power gain
v) high frequency response
19) List the disadvantages of FET.
i) low voltage gain
ii)small gain-bandwidth product
iii) susceptible to over voltages
20) List the applications of FET.
1. Used in sample and hold circuit
2. used in logic circuits
3. used in phase shift oscillator
4. used in chopper circuit
21) What are the three FET parameters?
i) Drain resistance (rd ) ii) Transconductance ( gm) ii) amplification factor(μ)
22) Define drain resistance in JFET.
Drain resistance is defined as the ratio of small change in drain to source voltage to the
corresponding change in drain current at constant gate to source voltage.
23) What is transconductance in JFET?
It is the ratio of small change in drain current to the corresponding change in drain to
source voltage.
24) What is amplification factor in JFET?
It is the ratio of small change in drain to source voltage to the corresponding change in
Gate to source voltage.
25) What is MOSFET?
MOSFET stands for Metal oxide semiconductor field effect transistor.MOSFET also
referred as Insulated gate field effect transistor (IGFET) because the gate is insulated
from the channel.

Part B

1. Explain the construction of PNP and NPN transistor.

Maximum mark for this question:8 marks
Explanation of construction of PNP transistor (2marks)
Diagram of PNP transistor (2marks)
Explanation of construction of NPN transistor (2marks)
Diagram of NPN transistor (2marks)

2. Explain the BJT current components and also give the current gain in various
configurations.
Maximum mark for this question: 16marks
BJT current components (10 marks)
Initial explanation (2marks)
Each component (2marks)
Topics to be explained – emitter efficiency, transport factor, current gain
Current gain in CE and CB (6 marks)
Definition, diagram and relation of Current gain (3 marks)
3. Explain the CE and CB configuration of a transistor.
Maximum mark for this question:8 marks
Explanation of each characteristics (4marks)
Explanation (2marks)
Diagram (2marks)
4. Explain the Transistor switching times
Maximum mark for this question:10 marks
Diagrams (2marks)
Delay time (2marks)
Rise time (2marks)
Fall time (2marks)
Storage time (2marks)
5. Explain Base width modulation and Break down characteristics of a transistor.
Maximum mark for this question: 12 marks
Base width modulation (6marks)
Definition (2marks)
Explanation with diagram (4marks)
Break down characteristics (6marks)
 Definition (2marks)
Explanation with diagram (4marks)

6. Derive the Ebber- Moll model for a PNP transistor and give the equation for IE
and IC
Maximum mark for this question: 16 marks
Initial introduction (2marks)
Diagram (2marks)
Explanation (4marks)
Derivation (8 marks)

Part-B

1. Explain the construction of PNP and NPN transistor.

Maximum mark for this question:8 marks
Explanation of construction of PNP transistor (2marks)
Diagram of PNP transistor (2marks)
Explanation of construction of NPN transistor (2marks)
Diagram of NPN transistor (2marks)

2. Explain the BJT current components and also give the current gain in various
configurations.
Maximum mark for this question: 16marks
BJT current components (10 marks)
 Initial explanation (2marks)
Each component (2marks)
Topics to be explained – emitter efficiency, transport factor, current gain
Current gain in CE and CB (6 marks)
Definition, diagram and relation of Current gain (3 marks)

3.explain the construction, working and characteristics of JFET and also obtain a
relationship between pinch off voltage and drain current.
Maximum mark for this question: 16 marks

Construction (2marks)
Working. (2marks)

Characteristics (4marks)
Derivation of relationship between pinch off voltage and drain current (8marks)

5. Explain the construction, operation, volt ampere characteristics, and application

of the two type of MOSFET.
Maximum mark for this question: 16 marks
Construction(4marks)
Operation(4marks)
Volt ampere characteristics(4marks)
Application(4marks)

CHAPTER 5 SIGNAL CONDITIONING AND DATA CONVERSION

PART A

PART B

1. Explain the sample and hold system

2. Explain Multiplexer and Demultiplexer.

3. Explain A/D and D/A converters

4. Explain integrator and differentiator.

5. Explain Analog computation by taking any differential equation as example,

thus solve the equation and draw the electronic analog circuit.
6. Explain active RC filter, butterworth and Chebyshev filter.

7. What is an analog multiplier? Explain its applications.