PRELIMINARY

SemiWell Semiconductor 2N7000

Logic N-Channel MOSFET
Features 3. Drain
Symbol {
■ RDS(on) (Max 5 Ω )@VGS=10V
RDS(on) (Max 5.3Ω )@VGS=4.5V ●

◀ ▲
■ Gate Charge (Typical 0.5nC) 2. Gate { ●
●

■ Maximum Junction Temperature Range (150°C)

{ 1. Source

General Description TO-92

This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.

1
2
3

Absolute Maximum Ratings

Symbol Parameter Value Units
VDSS Drain to Source Voltage 60 V
ID Continuous Drain Current(@TA = 25°C) 200 mA
IDM Drain Current Pulsed (Note 1) 500 mA
VGS Gate to Source Voltage ±20 V

Total Power Dissipation Single Operation (TA=25°C) 0.4 W

PD
Total Power Dissipation Single Operation (TA=70°C) 3.2 mW
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
Maximum Lead Temperature for soldering purpose,
TL 300 °C
1/8 from Case for 10 seconds.

Thermal Characteristics
Value
Symbol Parameter Units
Min. Typ. Max.
RθJA Thermal Resistance, Junction-to-Ambient - - 312.5 °C/W

January, 2003. Rev. 0. 1/6

Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000

Electrical Characteristics ( TJ = 25 °C unless otherwise noted )

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 60 - - V
Δ BVDSS/ Breakdown Voltage Temperature
ID = 250uA, referenced to 25 °C - 48 - mV/°C
Δ TJ coefficient

VDS = 60V, VGS = 0V 1

IDSS Drain-Source Leakage Current - - uA
VDS = 60V, VGS = 0V, TJ = 125 °C 1000

Gate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA

IGSS
Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 - 2.5 V

Static Drain-Source On-state VGS = 10 V, ID = 500mA - 1.55 5

RDS(ON) Ω
Resistance VGS = 4.5 V, ID = 75mA - 1.9 5.3

Dynamic Characteristics
Ciss Input Capacitance - 20 25
Coss Output Capacitance - 11 14 pF
VGS =0 V, VDS =25V, f = 1MHz
Crss Reverse Transfer Capacitance - 3 4
Dynamic Characteristics
td(on) Turn-on Delay Time - 4 18
tr Rise Time VDD =30V, ID =200mA, RG =50Ω - 2.5 15
VGS = 10 V ns
td(off) Turn-off Delay Time - 17 44
(Note 2,3)
tf Fall Time - 7 24
Qg Total Gate Charge - 0.5 0.65
VDS =30V, VGS =4.5V, ID =200mA
Qgs Gate-Source Charge - 0.15 - nC
Qgd Gate-Drain Charge(Miller Charge) (Note 2,3) - 0.2 -

Source-Drain Diode Ratings and Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit.
IS Maximum Continuous Diode Forward Current - - 200 mA
VSD Diode Forward Voltage IS =200mA, VGS =0V (Note 2) - - 1.2 V

※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.

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 2N7000

Fig 1. On-State Characteristics Fig 2. Transfer Characteristics

VGS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
0
4.0 V 10
0
3.5 V
10 Bottom : 3.0 V

ID, Drain Current [A]

ID, Drain Current [A]

o
150 C

o
※ Notes : o
-55 C ※ Notes :
25 C 1. VDS = 10V
1. 250µ s Pulse Test
2. TC = 25℃ 2. 250µ s Pulse Test

-1
10
0
10 10
1 0 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Fig 3. On Resistance Variation vs. Fig 4. On State Current vs.

Drain Current and Gate Voltage Allowable Case Temperature
3.0
Drain-Source On-Resistance [mΩ ]

IDR, Reverse Drain Current [A]

0
2.5 10
VGS = 4.5V
VGS = 10V
RDS(ON),

2.0

150℃
1.5 25℃
※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃ 2. 250µ s Pulse Test
-1
1.0 10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics

50 12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
10
40
VGS, Gate-Source Voltage [V]

VDS = 30V
8
Capacitance [pF]

※ Notes :
30 1. VGS = 0V
VDS = 48V
2. f=1MHz
Ciss 6

20
Coss 4

10
2
Crss
※ Note : ID = 200 mA

0 0
0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

3/6
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 2N7000

Fig 7. Breakdown Voltage Variation Fig 8. On-Resistance Variation

vs. Junction Temperature vs. Junction Temperature
1.2 2.5
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.0
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
1.5

1.0

1.0

0.9 ※ Notes :
1. VGS = 0 V 0.5 ※ Notes :
2. ID = 250 µ A 1. VGS = 10 V
2. ID = 500 mA

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

4/6
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 2N7000

Fig. 9. Gate Charge Test Circuit & Waveforms

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF V
4.5V
VDS
VGS Qgs Qgd

DUT
1mA

Charge

Fig 10. Switching Time Test Circuit & Waveforms

RL VDS
VDS 90%

VDD
( 0.5 rated V DS )

10%
10V
V Vin
RG DUT
Pulse
td(on) tr td(off)
Generator tf
t on t off

5/6
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2N7000
TO-92 Package Dimension

mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.

A 4.2 0.165

B 3.7 0.146

C 4.43 4.83 0.174 0.190

D 14.07 14.87 0.554 0.585

E 0.4 0.016

F 4.43 4.83 0.174 0.190

G 0.45 0.017

H 2.54 0.100

I 2.54 0.100

J 0.33 0.48 0.013 0.019

A
E

1
D 2
1. Source
3
2. Gate
3. Drain

H J
I

6/6
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