APM2014N

N-Channel Enhancement Mode MOSFET

Features Pin Description

• 20V/30A , RDS(ON)=12mΩ(typ.) @ VGS=4.5V

RDS(ON)=18mΩ(typ.) @ VGS=2.5V
• Super High Dense Cell Design for Extremely

•
•
Low RDS(ON)
Reliable and Rugged
1 2 3

o m
.c
TO-252 Package
G D S

Applications
U
Top View of TO-252

4
• Power Management in Computer, Portable
Equipment and Battery Powered Systems.
e t
Ordering and Marking Information
h e
APM2014N

a S
t
Package Code
U : TO-252
Handling Code

a
Operation Junction Temp. Range
Temp. Range C :-55 to 150 °C
Handling Code

.D
Package Code TR : Tape & Reel

APM2014N U :

w
APM2014N
XXXXX
XXXXX - Date Code

w
Symbol
w
Absolute Maximum Ratings

Parameter
(TA = 25°C unless otherwise noted)

Rating Unit www.DataSheet4U.com

VDSS Drain-Source Voltage 20
V
VGSS Gate-Source Voltage ±16

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.1 - Oct., 2002
APM2014N

Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

*
I
D Maximum Drain Current – Continuous 30
A
IDM Maximum Drain Current – Pulsed 50
TA=25°C 50
PD Maximum Power Dissipation W
TA=100°C 10
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
RθjA Thermal Resistance – Junction to Ambient 50 °C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM2014N
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static
Drain-Source Breakdown
BV DSS V GS =0V , IDS=250µA 20 V
Voltage
Zero Gate Voltage Drain
IDSS V DS =18V , V GS =0V 1 µA
Current
V GS(th) Gate Threshold Voltage V DS =V GS , IDS=250µA 0.6 1.5 V
IGSS Gate Leakage Current V GS =±16V , V DS =0V ±100 nA
Drain-Source On-state V GS =4.5V , IDS =10A 12 14
R DS(ON) a mΩ
Resistance V GS =2.5V , IDS =5A 18 22
V SD a Diode Forward Voltage ISD =4A , V GS=0V 0.6 1.3 V
b
Dynamic
Qg Total Gate Charge V DS =10V , IDS = 5A 18.2 24
Q gs Gate-Source Charge V GS =4.5V , 5.6 nC
Q gd Gate-Drain Charge 4.8
td(ON) Turn-on Delay Time 10 20
Tr Turn-on Rise Time V DD =10V , IDS =1A , 15 22
ns
td(OFF) Turn-off Delay Time V GEN =4.5V , R G =0.2Ω 28 42
Tf Turn-off Fall Time 17 25
C iss Input Capacitance V GS =0V 1210
C oss Output Capacitance V DS =15V 300 pF
C rss Reverse Transfer Capacitance Frequency=1.0MHz 210
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp. 2 www.anpec.com.tw

Rev. A.1 - Oct., 2002
APM2014N

Typical Characteristics

Output Characteristics Transfer Characteristics

30 30
VGS=4,5,6,7,8,9,10V
25 3V 25

ID-Drain Current (A)

ID-Drain Current (A)

20 20

15 15
TJ=125°C
2.5V
10 10

TJ=25°C
5 5
2V TJ=-55°C

0 0
0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current

1.50 0.030
IDS=250uA
VGS(th)-Threshold Voltage (V)

RDS(ON)-On-Resistance (Ω)

1.25 0.025

1.00 0.020 VGS=2.5V

(Normalized)

0.75 0.015
VGS=4.5V

0.50 0.010

0.25 0.005

0.00 0.000
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20

Tj - Junction Temperature (°C) ID - Drain Current (A)

Copyright  ANPEC Electronics Corp. 3 www.anpec.com.tw

Rev. A.1 - Oct., 2002
APM2014N

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature

0.07 2.00
ID=10A VGS=4.5V
0.06 1.75 ID=10A

RDS(ON)-On-Resistance (Ω)
RDS(ON)-On-Resistance (Ω)

1.50
0.05

(Normalized)
1.25
0.04
1.00
0.03
0.75
0.02
0.50

0.01 0.25

0.00 0.00
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C)

Gate Charge Capacitance

10 2100
VDS=4.5V Frequency=1MHz
ID=5A
VGS-Gate-Source Voltage (V)

1800
8
1500
Capacitance (pF)

Ciss
6
1200

4 900

600
2 Coss
300
Crss
0 0
0 5 10 15 20 25 30 35 0 4 8 12 16 20
QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V)

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

Rev. A.1 - Oct., 2002
APM2014N

Typical Characteristics

Source-Drain Diode Forward Voltage Single Pulse Power

30 250

10
200
IS-Source Current (A)

Power (W)
150
1
TJ=150°C TJ=25°C
100

0.1 50

0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1E-3 0.01 0.1 1 10 100 1000
VSD -Source-to-Drain Voltage (V) Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

Normalized Effective Transient

1 Duty Cycle=0.5
Thermal Impedance

D=0.2

D=0.1

D=0.05
0.1 D=0.02
D=0.01
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA

0.01
1E-4 1E-3 0.01 0.1 1 10 100 1000

Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 5 www.anpec.com.tw

Rev. A.1 - Oct., 2002
APM2014N

Packaging Information

TO-252( Reference JEDEC Registration TO-252)

E A
b2 C1
L2

D
H

L1
L
b C
e1
A1

Mi ll im et er s Inc he s
Dim
Min . Ma x . Min . Ma x .
A 2. 1 8 2. 3 9 0. 0 86 0. 0 94
A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50
b 0. 5 08 0. 8 9 0. 0 20 0. 0 35
b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15
C 0. 4 6 0. 5 8 0. 0 18 0. 0 23
C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23
D 5. 3 34 6. 2 2 0. 2 10 0. 2 45
E 6. 3 5 6. 7 3 0. 2 50 0. 2 65
e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04
H 9. 3 98 10 . 41 0. 3 70 0. 4 10
L 0. 5 1 0. 0 20
L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40
L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80
Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw
Rev. A.1 - Oct., 2002
APM2014N

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

temperature

Peak temperature

183°C
Pre-heat temperature

Time

Classification Reflow Profiles

Convection or IR/ VPR

Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C) 120 seconds max
Temperature maintained above 183°C 60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds
Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate 6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature 6 minutes max.

Package Reflow Conditions

pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

Rev. A.1 - Oct., 2002
APM2014N

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions t

Po P D
E
P1

F Bo
W

Ao D1 Ko

T2

J
C
A B

T1

Application A B C J T1 T2 W P E
330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3 2.5± 0.5 16+ 0.3 8 ± 0.1 1.75± 0.1
-0.2 - 0.1
TO-252 F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

Rev. A.1 - Oct., 2002
APM2014N

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

TO- 252 16 13.3 2500

Customer Service

Anpec Electronics Corp.

Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright  ANPEC Electronics Corp. 9 www.anpec.com.tw

Rev. A.1 - Oct., 2002