BD243/A/B/C

BD243/A/B/C

Medium Power Linear and Switching

Applications
• Complement to BD244, BD244A, BD244B and BD244C respectively

1 TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BD243 45 V
: BD243A 60 V
: BD243B 80 V
: BD243C 100 V
VCEO Collector-Emitter Voltage
: BD243 45 V
: BD243A 60 V
: BD243B 80 V
: BD243C 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 6 A
ICP *Collector Current (Pulse) 10 A
IB Base Current 2 A
PC Collector Dissipation (TC=25°C) 65 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BD243 IC=30mA, IB=0 45 V
: BD243A 60 V
: BD243B 80 V
: BD243C 100 V
ICEO Collector Cut-off Current : BD243/243A VCE = 30V, IB = 0 0.7 mA
: BD243B/243C VCE = 60V, IB = 0 0.7 mA
ICES Collector Cut-off Current : BD243 VCE = 45V, VBE = 0 0.4 mA
: BD243A VCE = 60V, VBE = 0 0.4 mA
: BD243B VCE = 80V, VBE = 0 0.4 mA
: BD243C VCE = 100V, VBE = 0 0.4 mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA
hFE *DC Current Gain VCE = 4V, IC = 0.3A 30
VCE = 4V, IC = 3A 15
VCE(sat) *Collector-Emitter Saturation Voltage IC = 6A, IB = 1A 1.5 V
VBE(on) *Base-Emitter ON Voltage VCE = 4V, IC = 6A 2 V
* Pulse Test :PW=300µs, duty Cycle<20% Pulsed

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BD243/A/B/C
Typical Characteristics

1000 1.8

VCE = 2V 1.7 IC = 10.1 IB

VBE(sat)(V), SATURATION VOLTAGE

1.6

1.5
hFE, DC CURRENT GAIN

1.4

1.3

1.2
100
1.1

1.0

0.9

0.8

0.7

0.6
10
0.5
0.01 0.1 1 10
0.1 1 10

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

1 100

IC = 10.1 IB
VBE(sat)(V), SATURATION VOLTAGE

IC[A], COLLECTOR CURRENT

10 IC(max)
10µs
10 1m
m s
s 100µ s
0.1

DC
1

BD243
BD243A
BD243B
BD243C
0.1
0.01 1 10 100
0.1 1 10

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area

80

70
PC[W], POWER DISSIPATION

60

50

40

30

20

10

0
0 25 50 75 100 125 150 175 200

o
T[ C], CASE TEMPERATURE

Figure 5. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BD243/A/B/C
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

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FACT™ QFET™
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FAST® Quiet Series™
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E