Silicon control Rectifier (SCR)

► The Silicon Controlled Rectifier (SCR) is a four layer

semiconductor device that is a member of a family
of control devices known as thyristor. The SCR has
become the workhorse of the industrial control
industry.

► The SCR is a three-terminal device with an anode

and a cathode (as with a standard diode) plus a
third control lead or gate. As the name implies, it is
a rectifier which can be controlled - or more
correctly - one that can be triggered to the “ON”
state by applying a small positive voltage to the
gate lead.
Physical, Equivalent &
Symbol
 Modes of Operation
► There are three modes of operations of SCR

1) Forward biased operation

a) Forward Blocking or Off-state condition

b) Conducting State or ON-state
condition

2) Reverse Biased operation

 Forward Bias Operation
► A forward bias will result when a positive potential is
applied to the anode and negative to the cathode.

► Even after the application of a forward bias, the device

remains non-conducting until the positive gate trigger
voltage is applied this is known as Forward Blocking or
Off-state condition.
condition

► After the device is triggered ON by applying a positive

gate trigger voltage it reverts to a low impedance
state and current flows through the unit. The unit will
remain conducting after the gate voltage has been
removed, this is known as Conducting State or ON-
state condition.
condition
 Reversed Biased Off state
► The reverse bias condition is represented by -V. A reverse
bias exists when the potential applied across the SCR
results in the cathode being more positive than the anode.

► In this condition the SCR is non-conducting state and the

application of a trigger voltage will have no effect on the
device.

► In the reverse bias mode, the knee of the curve is known

as the Peak Inverse Voltage PIV (or Peak Reverse Voltage -
PRV) and this value cannot be exceeded or the device will
break-down and be destroyed.

► A good Rule-of -Thumb is to select a device with a PIV of

at least three times the RMS value of the applied voltage.
SCR Characteristics
 Contd.
Holding Current:
The holding current “Ih “ is the minimum anode
current to maintain the thyristor in the On state. The holding
current is always less than latching current.

Latching Current:
The latching Current “ IL “ is the minimum anode current
required to maintain the thyristor in the On state immediately after a
thyristor has been turned on and the gate signal has been removed.

Break over Voltage:

These are the anode to cathode voltage across the SCR
after that SCR will be in ON state without applying any gate signal to
gate terminal. Such a turn-on could be destructive
 Important Points
► The forward anode current of a thyristor must be more
than its latching current to latch into the conduction
state; otherwise, the device reverts to the blocking
condition as the anode to cathode voltage falls.

► IF the forward anode current is reduced below its

holding current, the device becomes unlatched and
remain in Off State.

► Once a thyristor conducts, it behaves like a conducting

diode and there is no control over the device. That is,
the device cannot be turned Off by another positive or
negative gate pulse. So we can say that it is a semi
control device.
 Two-Transistor model of
Thyristor
► Since Thyristor is a Latching device so the regenerative
or Latching action due to positive feedback can be
demonstrated by using a two transistor model of SCR.

► A thyristor can be considered as two complementary

transistors, one is pnp -transistor Q1 and other is npn –
transistor
Q2.

► The circuit representation of the two-transistor model of

a thyristor is shown in diagram.
Diagram
 Contd.
► In the off state of a transistor, collector current IC is
related to emitter current IE as-
…(1)
► where α is the common-base current gain and ICBO
is the common base leakage current of collector-
base junction of a transistor with emitter open.
► For transistor Q1 in diagram, emitter current IE =
anode current Ia and collector current Ic is Ic1.
Therefore for transistor Q1,
…(2)
 Contd.
► Similarly for transistor Q2, collector current IC2 is given by

…(3)

► The sum of the two collector currents given by equations (2) and
(3) is equal to the anode current Ia.

…(4)
►
…(5)
 Contd.
► …(6)

…(7)

where Ik= (Ia + Ig)

► It is clear from eq. (7), that α1+α2 → 1 causes the thyristor to turn on i.e.
the anode current reaches a high value or the SCR starts conducting.

► α1 varies with Ia (emitter current) and α2 varies with Ia+Ig. If Ig is

increased, this increases Ia, which further increases α1 and α2. This will in
turn increase Ia. This is a regenerative or positive feedback effect.
 Phase Control of SCR
► InSCR Phase Control, the firing angle, or point during
the half-cycle at which the SCR is triggered, determines
the amount of current which flows through the device
as well as from the load.

► Itacts as a high-speed switch which is open for the first

part of the cycle, and then closes to allow power flow
after the trigger pulse is applied.
Firing angel
 Contd.
► Figureshows an AC waveform being applied
with a gating pulse at 45 degrees. There are
360 electrical degrees in a cycle; 180 degrees
in a half-cycle.

► Thenumber of degrees from the beginning of

the cycle until the SCR is gated ON is referred
to as the firing angle.

► Thenumber of degrees that the SCR remains

conducting is known as the conduction angle.
 output voltage
applied to the load
 Turning ON methods of SCR
► Thereare five different methods
1) Thermal.
2) Light.
3) High voltage.
4) High dv/dt rating.
5) Gate current. (Most applicable)
 Gate Current method
► Thisis the most widely used method to turn-On
the thyristor by applying a small positive gate
signal to the SCR.

► Asthe gate current increased ,the forward

blocking voltage (VBO) is decreased.

► TheTurn-ON time (TON) of SCR is the sum of

Delay time (td) and Rise time (tr).
 Contd.
► Delay Time:
It is defined as the time interval between
10% of the gate current and 10% of on-state Anode
current.

► Rise Time:
It is the time interval between 10% of on-
state current and 90% of on-state current.

Turn-On Time:
It is the time interval between 10% of
gate current and 90% of on-state anode current.
Switching times
 Application of SCR
► Typical applications include :

1) DC motor control.
2) generator field regulation.
3) Variable Frequency Drive (VFD) DC Bus
voltage control.
4) Solid State Relays.
5) lighting system control.
 Problems
Q1:
Determine the minimum duration of gate
pulse to turn the SCR On while Latching
current is 300mA, Input voltage 100V ,
R=20ohm, L=1H.

Q2:
Determine the value of Resistor to turn Off
Thyristor while Vs=330V and Holding Current
is 150 mA.
 Types of Thyristor
► SiliconControlled Switch (SCS)
► Mosfet controlled thyristor (MCT)
► Gate turn-Off Thyristor (GTO)
► Reverse conducting thyristor (RCT)
► A-symmetrical Thyristor (ASCR)
SILICON-CONTROLLED
SWITCH
 Silicon-Controlled Switch
► It is a four-layer pnpn device
► Its basic construction is the same with the SCR with the
addition of the second gate terminal.
► Terminals are
Anode, cathode, Anode gate Ga, and Cathode gate Gk.

Gate Terminal Advantage

Effect: The higher the anode gate current, the lower the
required anode-to-cathode voltage to turn the device on.
Use: Used to turn the device either on or off
 Symbol and Construction

ANODE ANODE

P ANODE
N ANODE GATE
P GATE
N
CATHODE
CATHODE
GATE
GATE CATHODE
CATHODE
A.) SCS BASIC B.) SCS GRAPHIC
CONSTRUCTION SYMBOL
 Switching of SCS
► Turn on switching of the SCS is as follows

1) positive pulse on Gk terminal

2) negative pulse on Ga terminal

o Turn Off switching is as

1) Negative pulse on Gk terminal

2) Positive Pulse on Ga terminal
 SCS equivalent transistor
circuit

Anode

Q1
Anode gate
pnp

GA
IC1
Cathode
gate Q2
npn

IGK Cathode
 Operation
(To turn on the device, a negative pulse must
be applied to the Anode gate terminal, or
you can apply positive pulse on Cathode
gate terminal).

ON State: A negative pulse at the anode gate

will forward-bias the base-to-emitter
junction of PNP Transistor Q1 , turning it on.
The resulting heavy collector current IC1 ,
will turn on Q2 , resulting in a regenerative
action and this will be the on state ( latching ) of the
SCS device.
 Cont.
(To turn Off the device, a Positive pulse must be applied
to the Anode gate terminal, or you can apply negative
pulse on Cathode gate terminal)

To turn OFF: A positive pulse at the anode gate will

reverse-bias the base-to-emitter junction of Q1, turning
it off, resulting in the open circuit”off” state of the
device.
 Application
► SCS & SCR are Both used in similar Application.

► SCS has complete control on Gate terminal which is

used in both turn on & turn Off switching.

► The Voltage and Current ratings are more limited as

compared to SCR.

► It is used in Digital application such as counters,

registers & timing circuits.
 Mosfet controlled thyristor
MCT
► MOS Controlled Thyristor (or MCT) is voltage
controlled fully controllable Thyristor.

► The MCT is similar in operation with GTO thyristor,

but it has voltage controlled insulated gate.

► It has two MOSFETs in its equivalent circuit. One is

responsible for turn-on and the another is
responsible for turn-off.
 Types of MCT
► There are basically two types of MCT

1) N type- Mosfet controlled thyristor

2) P type - Mosfet controlled thyristor
 Equivalent Circuit & Circuit
Symbol

P-MCT equivalent circuit P-MCT circuit symbol

 N-MCT Equivalent Ckt &
Symbol
N-MCT equivalent circuit N-MCT circuit symbol
 Turn-on switching of N-
MCT
 Turn on MCT by turning on the ON-FET (n-Mosfet)

• Positive gate-cathode voltage for N-MCT

 ON-FET delivers base current to the low-gain BJT in the thyristor

equivalent circuit and activates that BJT.

• PNP transistor in the N-MCT is Low gain BJT.

 Low-gain transistor activates the higher gain transistor NPN and

thyristor latches on.

 Once higher gain transistor NPN, which is in parallel with ON-FET

is activated, current is shunted from ON-FET to the BJT and the
ON-FET carries very little current in the MCT on-state.
 Turn-Off switching of N-
MCT
 To Turn N-MCT off by turning on the OFF-FET (p-Mosfet)

• Negative gate-cathode input for the N-MCT

 OFF-FET shunts base current away from the higher gain BJT
in the thyristor equivalent circuit and forces it to cut-off.

• NPN transistor in the N-MCT is higher Gain BJT.

 Cut-off of higher gain BJT then forces low-gain BJT into cut-
off. So that MCT will turn Off.
Gate Turn-off Thyristors GTO
► The GTO is a non latching device

► Turned on by applying positive gate signal.

► Turned off by applying negative gate signal.

► On state voltage is 3.4V for 550A, 1200V GTO.

► Controllable peak on-state current ITGQ , is the peak

value of on-state current which can be turned-off by
gate control.
Symbol, Cross section and
Equivalent Circuit
 Operation
► The turn on mechanism of GTO is similar to that of
Conventional thyristor.

► Gate current is maintained throughout the whole

conduction period to prevent any drop out from the
conduction state.

► While in turn Off, the GTO has a relatively low gain

that’s why it requires high reverse current on the Gate
to turn the device Off.

► When negative gate signal is applied than sufficient

charge carriers from the cathode terminal is removed
and device drawn out from regenerative action.
Characteristics Curve
Advantage of GTO over SCR
► Elimination of commutating components in forced
commutation resulting in reduction in cost, weight and
volume.
► Faster turn OFF permitting high switching frequency.
► Improved converters efficiency.
► GTOs are sensitive to dv/dt. Therefore, snubber circuits are
used to minimize dv/dt and di/dt rating effects.

► It can be used at high power levels.

 Disadvantages of GTO
► On-state voltage drop is more.

► Due to multi cathode structure higher gate current is

required.

► Reverse blocking capability is less than its forward blocking

capability so we will have to add a diode in series to improve
the reverse blocking performance.

► Latching and holding current is more in GTO than those of

thyristor.
► ON state voltage drop and associated losses are higher in
GTO than thyristor
Reverse Conducting Thyristor
► Reverse conducting thyristor (RCT) is high-power
switching semiconductor device similar to thyristor with
integrated reverse diode .

► This thyristor is not capable of reverse blocking mode.

► The forward blocking voltage varies from 400 to 2000V.

► These devices are advantageous where reverse or freewheel

diode must be used.
 Contd.
► Anti-parallel diode connected across
SCR on the same silicon chip.

► This diode clamps the reverse

blocking voltage to 1 or 2V under
steady state condition & while in
transient state that is 30 to 40V due
to induced voltage in in circuit.

► RCT also called Asymmetrical

Thyristor (ASCR).

► Limited applications. used in

frequency changers and inverters.
 Breakover Devices
► The Breakover devices are used to apply the
triggering pulse to devices such as SCR and
TRIAC.

► There are three types of Breakover devices

1) DIAC
2) UJT
3) PUT

• .
 DIAC

• Bi-directional device without a gate terminal.

• DIAC is a five layer device PNPNP.
• Conducts in both directions but waits for a
breakover voltage.
• Breakover voltages are always the same in both
direction and not controllable.
• DIACs are also called symmetrical trigger diodes
due to the symmetry of their characteristic curve.
• Excellent for controlling TRIAC
DIAC voltage domain Current
Relationship
 Operation
► The DIAC, or diode for alternating current, is a
bidirectional trigger diode that conducts current only after
its breakdown voltage has been exceeded.

► When this occurs, the resistance of the diode abruptly

decreases, leading to a sharp decrease in the voltage drop
across the diode and, usually, a sharp increase in current
flow through the diode.

► The terms anode and cathode no longer apply, so the

connections are simply named terminal 1 (T1) and terminal
2 (T2). Each terminal can serve as either anode or cathode,
according to the polarity of the applied voltage.
 Continued
► The diode remains "in conduction" until the current
flowing through it drops below a certain current value,
called the holding current. Below this value, the diode
switches back to its high-resistance (non-conducting)
state.

► When used in AC applications this commutation is

automatically happens when the current reverses polarity
.

► The drawback of the DIAC is that it cannot be triggered at

just any point in the ac power cycle; it triggers at its
preset breakover voltage only.
DIAC - Application
 DIAC - Application
• Brightness of a lamp
• In the of beginning half cycle, TRIAC off
• capacitor charges based on RC time constant
• When DIAC is activated
• TRIAC is activated and conducts
• Process repeated for each half cycle of the AC
sine wave
• Adjust the brightness by changing the variable
resistance which effects charging time
 UniJunction Transistor UJT
►A Unijunction transistor (UJT) is an
electronic semiconductor device that is used to
trigger the device such as SCR.

► TheUJT does not belong to thyristor family

because it does not have the four layer
construction.

► The term Unijunction refers to that the UJT has

a single pn junction.
 Symbol & Terminals
► The UJT has three terminals: an
emitter (E) and two bases (B1 and
B2).

► The base is formed by lightly doped

n-type bar of silicon. Two ohmic
contacts B1 and B2 are attached at
its ends.

► The emitter is of p-type and it is

heavily doped.
 Equivalent Circuit
► r’B1 and r’B2 are internal dynamic
resistances.

► The interbase resistance,

r’BB = r’B1 + r’B2.

► r’B1 varies inversely with emitter

current, IE.

► r’B1 can range from several thousand

ohms to tens of ohms depending on IE.
 Basic UJT Biasing
 Vr’B1 = ηVBB
η = (r’B1/r’BB) is the standoff ratio.

 If VEB1 < Vr’B1 + Vpn, then

IE = 0 since pn junction is not forward
Biased.

 At VEB1=Vp = ηVBB + Vpn, the UJT turns

on and operates in a negative resistance
region up to a certain value of emitter
current.

► It then becomes saturated at Valley point

and IE increases with VE simultaneously.
UJT Characteristic Curve
 Applications of UJT
► UJT can be used as trigger device
for SCR.

► The UJT is also used as a Relaxation

Oscillator.

► A relaxation oscillator is an
oscillator in which a capacitor is
charged gradually and then
discharged rapidly.

► Other applications include

nonsinusoidal oscillators, sawtooth
generators, and timing circuits.
Conditions For UJT Relaxation
Oscillator Operation
In the relaxation oscillator,
 Condition 1:
• RE must not limit IE at the
peak point to less than IP at turn-on, i.e.,
[ VBB - IP RE > Vp]
 Condition 2:
• To ensure turn-off of the UJT at the valley point, RE
must be large enough so that IE can decrease below Iv,
i.e., [ VBB - IV RE < Vv]
Waveform of Oscillator
Oscillation Frequency
 Charging cycle
−t
τ1
Vc = VLow + (VHi −Vlow )(1 − e )
−t

Vc = Vv + (VBB −Vv )(1 − e ( RE *C )

)
−t

Vc = Vv +VBB −Vv − (VBB −Vv )e ( RE *C )

)
−t

Vc = VBB − (VBB −Vv )e ( RE *C )

)
→( A)
 Contd.
• Since Capacitor is charging so (Vc= Vp)
and (t=t1) −t1

VP =VBB −(VBB −Vv )e ( RE *C )

)
−t1

VP −VBB =−(VBB −Vv )e ( RE *C )

)
−t 1
( ) V p −VBB
log( −e RE C
) =log( )
VBB −VV
t1 V p −VBB
−( ) =log( )
RE C VBB −VV
 Contd.
t1 V p −VBB
−( ) =log( )
RE C VBB −VV
VBB −Vp 
−t1 =( RE C ) log  
VBB −VV 
VBB −Vv 
t1 =( RE C ) log   →( B)
VBB −VP 
 Discharging cycle
−t 2

VC =V p e τ2
Since .(VC =VV ) & (τ2 = (( rB1 + R1 )C )
−t 2
( rB 1 +R1 ) C
VV =V p e
−t 2
( rB 1 +R1 ) C VV
e =
VP
−t 2 VV
= log( )
( rB1 + R1 )C VP
 Contd.
−t 2 VV
= log( )
( rB1 + R1 )C VP
 Vp 
t 2 = ( rB1 + R1 )C 
log( 
 
→(C )
 VV 
T = (t1 +t 2 )
1
f =
T
 Programmable Unijunction
Transistor PUT

► The PUT is actually a type of thyristor and a four

layer device.
► It can replace the UJT in some oscillator
applications.
► It is more similar to an SCR except that its anode to
gate VG voltage can be used to both turn on and
turn off the device.
PUT Construction & Symbol
 Conditions of Operation
► Notice
that the gate is connected to the n region
adjacent to the anode.

► Thegate is always positive with respect to the

cathode.

► Thestandoff ratio is replaced by external elements to

program VP that's why it is called programmable.

► Thecharacteristic plot of VAK versus IA is similar to the

VE versus IE plot of the UJT.
 Cont.
► (VA – VG) > 0.7
Where VA is the anode to
Cathode voltage & VG is
Gate voltage.
►
VG is the voltages that are
across the R3 that can be
programmed by changing
the stand off ratio that
depends upon R2 & R3
combination externally.
 Formulas
► Vp or gate voltage is

R2
VP =( )VS
R1 +R2
► Intrinsic standoff ratio is

► Period VP
of Oscillation R2
η= =( )
VS R1 +R2

1 Vs R2
T = = RC ln( ) = RC ln(1 + )
f Vs − V p R1
PUT Characteristics Curve
PUT as Relaxation Oscillator
 Advantages over UJT
► RG1V can control the frequency of oscillation with a
constant charging rate.

► Can operate from lower supply voltages compared to

UJT.

► In case of UJT the peak voltages are constant for certain

supply voltage while in PUT the peak voltage are
depend upon the User. We can select peak current and
voltage for different values of Supply voltage.

► Can be used for very low frequencies that is because

the availability of lower IP.