Experiment Number: 05 Dates: 03.02.

10

Experiment Name:

TO STUDY THE DIFFERENT GATES (NAND, NOT, AND, OR, NOR, EX-OR)
CHARECTARISTICS USING NAND GATE

AIM OF THE EXPERIMENT:

The aim of the experiment is to get different gates characteristics using NAND gates. We
can realize the characteristics comparing with corresponding truth table.

DESCRIPTION OF 7400 CHIP:

7400 IC is a quad 2 inputs NAND (TTL) gate. It has 14 pins each 3 pins form a NAND
gate including 2 inputs and one as output.

INPUT OUTPUT
1,2 3
4,5 6
13,12 11
10,9 8

In this chip 14th pin is connected with fixed supply voltage (4.5 volt) and the 7th pin is
grounded.

NAND GATE:
Here A & B are two inputs (1, 2) & the 3rd pin (3) is used as output (Y)
 For A=0 Volt
B(Volt) OutputY(Volt) B(volt) Output(Volt)
0.00 5.03 3.09 5.04
0.47 5.03 3.48 5.04
0.81 5.03 3.61 5.03
1.26 5.03 4.14 5.03
1.65 5.03 4.38 5.03
2.03 5.03 4.60 5.03
2.26 5.04 4.80 5.03
2.35 5.04 4.90 5.03
2.63 5.03 5.00 5.03

B(Volt) OutputY(Volt) B(volt) Output(Volt)

REALISATION OF DIFFETENT GATES USING NAND GATES:

1. NOT GATE:

The two inputs (1 &2) are shorted & connected to the variable voltage. The 3rd is used
as output.

B(Volt) OutputY(Volt) B(volt) Output(Volt)

 2. AND GATE:

In this ckt. Two NAND gate are used. According to fig. the 1st gate is used as a
simple NAND gate. The output of the NAND gate is connected to the shorted input of
2nd NAND gate. Out of the two inputs one is fixed. The final output is taken from the
output of 2nd NAND gate.

B(Volt) OutputY(Volt) B(volt) Output(Volt)

B(Volt) OutputY(Volt) B(volt) Output(Volt)

3. OR GATE: In this gate ckt. Three NAND gates are used. Two gates used as NOT
gate & the other as simple NAND gate. In 1st NOT gate, the input A is connected to the
variable voltage & in 2nd NOT gate the input B is grounded. Final output is taken from
third NAND gate.
B(Volt) OutputY(Volt) B(volt) Output(Volt)

4. NOR GATE:

The ckt. Connection for the NOR gate using NAND gate is same as for OR-gate except
the output is obtained by connecting to the shorted input of another NAND gate and the
final output is taken from it.

B(Volt) OutputY(Volt) B(volt) Output(Volt)

B(Volt) OutputY(Volt) B(volt) Output(Volt)

5. EX-OR GATE:

One of the input of the first NAND gate is connected to the fixed dc supply, the other is
connected to variable voltage. the output from first NAND gate is connected to one input
of each of the 2nd and 3rd NAND gate.the remaining inputs of the 2nd 3rd gates are
connected to fixed dc supply and variable voltage respectively. The output of 2nd and 3rd
NAND gates are connected to the input of the 4th NAND gate. Final output is taken from
it.

B(Volt) OutputY(Volt) B(volt) Output(Volt)

B(Volt) OutputY(Volt) B(volt) Output(Volt)

Ex-Nor Gate:-

CONCLUSSION:

Throughout the experiment, we see that we have a certain range of low and high state
(i.e. OFF and ON state) and we also see that the region of change from lower state to
higher state is not so sharp as we think the ideal case .From our experiment we observe
that the variable input voltage acts as in high state when it is 1.2V but this is less than that
of constant voltage at high state (4.5V)