FQD1N60C / FQU1N60C N-Channel QFET® MOSFET

April 2013

FQD1N60C / FQU1N60C
N-Channel QFET® MOSFET
600 V, 1.0 A, 11.5 Ω
Description Features
This N-Channel enhancement mode power MOSFET is • 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor®’s proprietary ID = 0.5 A
planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 4.8 nC)
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior • Low Crss (Typ. 3.5 pF)
switching performance and high avalanche energy • 100% Avalanche Tested
strength. These devices are suitable for switched mode • RoHS Compliant
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.

D D
!

G
G
D
●

S S ◀ ▲
G! ●
●

D-PAK I-PAK
!
S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQD1N60C / FQU1N60C Unit

VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C) 1 A
- Continuous (TC = 100°C) 0.6 A
IDM Drain Current - Pulsed (Note 1) 4 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 33 mJ
IAR Avalanche Current (Note 1) 1 A
EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
Power Dissipation (TA = 25°C)* 2.5 W
PD Power Dissipation (TC = 25°C) 28 W
- Derate above 25°C 0.22 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter FQD1N60C / FQU1N60C Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 4.53 °C/W
RθJA Thermal Resistance, Junction-to-Ambient* 50 °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQD1N60C / FQU1N60C Rev. C0
 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Unit

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 600 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 0.5 A -- 9.3 11.5 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 0.5 A (Note 4) -- 0.75 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 130 170 pF
Coss Output Capacitance f = 1.0 MHz -- 19 25 pF
Crss Reverse Transfer Capacitance -- 3.5 4.5 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 7 24 ns
VDD = 300 V, ID = 1.1 A,
tr Turn-On Rise Time -- 21 52 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 13 36 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 27 64 ns
Qg Total Gate Charge VDS = 480 V, ID = 1.1 A, -- 4.8 6.2 nC
Qgs Gate-Source Charge VGS = 10 V -- 0.7 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 2.7 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 4 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 1.1 A, -- 190 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -- 0.53 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 59 mH, IAS = 1.1 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 1.1 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQD1N60C / FQU1N60C Rev. C0
 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET
Typical Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
0
10 6.5 V
6.0 V
5.5 V 10
0

5.0 V

ID, Drain Current [A]

ID, Drain Current [A]

o
Bottom : 4.5 V 150 C
o
-55 C

o
-1 25 C
10

※ Notes :
※ Notes :
1. 250μ s Pulse Test
1. VDS = 40V
2. TC = 25℃
2. 250μ s Pulse Test
-1
10
-2
10
-1 0 1 2 4 6 8 10
10 10 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

30

25
I DR , Reverse Drain Current [A]

VGS = 10V
Drain-Source On-Resistance

20
0
RDS(ON) [Ω ],

10

15

10 VGS = 20V
150℃
※ Notes :
5
25℃ 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μ s Pulse Test

-1
0 10
0.0 0.5 1.0 1.5 2.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

250 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10 VDS = 120V
200
VDS = 300V
VGS, Gate-Source Voltage [V]

Ciss
8
VDS = 480V
150
Capacitance [pF]

Coss
6

100
4
※ Notes ;
1. VGS = 0 V
Crss 2. f = 1 MHz
50
2
※ Note : ID = 1A

0 0
-1 0 1 0 1 2 3 4 5 6
10 10 10
VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQD1N60C / FQU1N60C Rev. C0
 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BV DSS , (Normalized)

RDS(ON) , (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 μ A 0.5 1. VGS = 10 V
2. ID = 0.5 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C]
o
TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

1.2
1 Operation in This Area
10
is Limited by R DS(on)

1.0

100 µs
0.8
ID, Drain Current [A]

0
1 ms
ID, Drain Current [A]

10
10 ms
100 ms 0.6
DC

-1 0.4
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C 0.2
3. Single Pulse

-2
10 0.0
0 1 2 3
10 10 10 10 25 50 75 100 125 150
VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
( t), T h e rm a l R e s p o n s e

D = 0 .5
※ N o te s :
1 . Z θ J C ( t) = 4 .5 3 ℃ /W M a x .
0 2 . D u ty F a c to r, D = t 1 / t 2
10 0 .2 3 . T J M - T C = P D M * Z θ J C ( t)

0 .1 PDM
0 .0 5 t1
t2
0 .0 2
θ JC

-1
0 .0 1
10
Z

s in g le p u ls e

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQD1N60C / FQU1N60C Rev. C0
 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQD1N60C / FQU1N60C Rev. C0
 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQD1N60C / FQU1N60C Rev. C0
 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET
Mechanical Dimensions

D-PAK

Dimensions in Millimeters

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQD1N60C / FQU1N60C Rev. C0
 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET
Mechanical Dimensions

I-PAK

Dimensions in Millimeters

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQD1N60C / FQU1N60C Rev. C0
 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET
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Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I64

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQD1N60C / FQU1N60C Rev. C0
Mouser Electronics

Authorized Distributor

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