Professional Documents
Culture Documents
7 July 2011
July 2011
Microwave Journal
Software and Design
EMI
by the
Dashboard
Vol. 54 • No. 7
Light
MVP
Anritsu
Broadband
Founded in 1958 VNA
mwjournal.com
Noisecom’s cutting edge technology will lead you down the road to success with
our innovative and high-speed solutions.
As a global provider of noise generators, modules, diodes and • RF & Microwave AWGN • >60 GHz Noise Figure
specialized test solutions we are ready to meet your present
• Digital Noise Generation • Serial Data Compliance
needs, as well as address your future applications.
(Jitter, Rj)
• Satellite Communications
For more information visit: www.noisecom.com or call
(BER, Eb/No) • Wireless HD Testing
+1 973-386-9696.
• Wireless (WiMAX & LTE) • Receiver & Antenna
Calibration
Frequency Insertion Rise/Fall On/Off On/Off DC Power
Range Model Loss Isolation VSWR Time Time Time Positive/Negative
(GHz) Number (dB, Max.) (dB, Min.) (Max.) (ns, Typ.) (ns, Typ.) (ns, Max.) (mA, Max.)
SPST
0.2 – 2 SW1-002020RN1NF 1.7 70 1.6:1 10/10 20 35 35/70
2–8 SW1-020080RN1NF 2 80 1.7:1 10/10 20 35 35/70
4 – 12 SW1-040120RN1NF 2.2 80 1.7:1 10/10 20 35 35/70
2 – 18 SW1-020180RN1NF 3 80 2:1 10/10 20 35 35/70
1 – 18 SW1-010180RN1NF 3 70 2:1 10/10 20 35 35/70
SP2T
0.2 – 2 SW2-002020RN1NF 1.5 70 1.6:1 10/10 20 35 60/60
2– 8 SW2-020080RN1NF 1.8 80 1.7:1 10/10 20 35 60/60
4– 12 SW2-040120RN1NF 2.2 80 1.7:1 10/10 20 35 60/60
2– 18 SW2-020180RN1NF 2.8 80 2:1 10/10 20 35 60/60
1– 18 SW2-010180RN1NF 3 70 2:1 10/10 20 35 60/60
SP3T
0.2 – 2 SW3-002020RN1NF 1.6 70 1.6:1 20/20 150 180 85/85
2– 8 SW3-020080RN1NF 1.9 80 1.7:1 20/20 150 180 85/85
4– 12 SW3-040120RN1NF 2.4 90 1.7:1 20/20 150 180 85/85
2– 18 SW3-020180RN1NF 3 80 2:1 20/20 150 180 85/85
1– 18 SW3-010180RN1NF 3.1 70 2:1 20/20 150 180 85/85
Note: The above models are all reflective switches. Absorptive models are also available, please contact MITEQ.
NoiseWave
your supplier of high performance, precise equipment for AWGN
COVER F E AT U R E
20 EMI by the Dashboard Light
David Vye, Microwave Journal Editor
Invited papers from leaders in the area of automotive EMI simulation and test systems – Ansys, CST and ETS-Lindgren
– provide an update on the challenges for integrated wireless systems into the next generation of automobiles and recent
changes to their tools that will help address EMI
S PEC I A L R E P O R T
52 The 60 GHz Radio Market and Technology
Hans O Johansson, Sivers IMA
Advantages and discussion of 60 GHz millimeter-wave technology presenting an optimal opportunity translating into reliable
and affordable gigabit-plus wireless connections
T ec h nical feature s
80 Accounting for Dynamic Behavior in FET Device Models
Graham Riley, Agilent EEsof EDA
Presentation of a simulation-based qualification method, offering designers a means of testing FET device models for critical
large-signal, high frequency behavioral characteristics at the operating point required by an application
Microwave Journal (USPS 396-250) (ISSN 0192-6225) is published monthly by Horizon House Publications Inc., 685 Canton St., Norwood, MA 02062. Periodicals postage
paid at Norwood, MA 02062 and additional mailing offices.
Photocopy Rights: Permission to photocopy for internal or personal use, or the internal or personal use of specific clients, is granted by Microwave Journal for users through
Copyright Clearance Center provided that the base fee of $5.00 per copy of the article, plus $1.00 per page, is paid directly to the Copyright Clearance Center, 222 Rosewood
54 Years Drive, Danvers, MA 01923 USA (978) 750-8400. For government and/or educational classroom use, the Copyright Clearance Center should be contacted. The rate for this use
is 0.03 cents per page. Please specify ISSN 0192-6225 Microwave Journal International. Microwave Journal can also be purchased on 35 mm film from University Microfilms,
of Publishing Periodic Entry Department, 300 N. Zeeb Rd., Ann Arbor, MI 48106 (313) 761-4700. Reprints: For requests of 100 or more reprints, contact Barbara Walsh at (781) 769-9750.
Excellence POSTMASTER: Send address corrections to Microwave Journal, PO Box 3256, Northbrook, IL 60065-3256 or e-mail mwj@omeda.com. Subscription information: (847) 291-5216.
This journal is issued without charge upon written request to qualified persons working in that part of the electronics industry, including governmental and university installation,
that deal with VHF through light frequencies. Other subscriptions are: domestic, $120.00 per year, two-year subscriptions, $185.00; foreign, $200.00 per year,
two-year subscriptions, $370.00; back issues (if available) and single copies, $10.00 domestic and $20.00 foreign. Claims for missing issues must be filed within 90 days of date
of issue for complimentary replacement.
EM speed
Stop waiting and wishing for an
EM tool that keeps pace with
your own creative ideas. AXIEM
turbocharge
current alternatives for designs of
10 K unknowns or more. And now
that it handles antennas, too, your
creativity
minutes rather than hours, go with
AXIEM. Grab a test copy today at
www.awrcorp.com/AXIEM
106 Isolator/Circulator with Best-in-class Intermodulation Distortion Director of Production & Distribution:
Robert Bass
Performance Lead Designer & Production Coordinator:
Skyworks Janice Levenson
Graphic Designer: Sachiko Stiglitz
Presentation of a new isolator/circulator featuring IMD performance better
than -90 dBc
EUROPE
110 High Performance 20 GHz Microwave Signal Generator International Editor: Richard Mumford
Office Manager: Nina Plesu
AnaPico Ltd.
Introduction to a low cost, portable signal generator product line with CORPORATE STAFF
frequency coverage to 20 GHz CEO: William M. Bazzy
President: Ivar Bazzy
114 Spectro VNATM Advances Vector Network Analyzer Capabilities Vice President: Jared Bazzy
Constant Wave
Introduction of the Spectro VNA vector network analyzer software brings the Editorial Review Board
power of joint time frequency domain processing to VNAs Dr. I.J. Bahl Dr. J.C. Lin
D.K. Barton Dr. S. Maas
F.M. Bashore Dr. R.J. Mailloux
TECH B R I E F S Dr. E.F. Belohoubek S. March
Dr. C.R. Boyd Dr. G.L. Matthaei
118 Time Domain Solver and High Frequency Modeling and Simulation N.R. Dietrich
Dr. Z. Galani
Dr. D.N. McQuiddy
Dr. J.M. Osepchuk
INTEGRATED Engineering Software Dr. F.E. Gardiol Dr. J. Rautio
G. Goldberg Dr. U. Rohde
Introduction to a new time domain solver and high frequency tool for modeling M. Goldfarb Dr. G.F. Ross
and simulating 3D RF and microwave applications Dr. P. Goldsmith M. Schindler
Dr. M.A.K. Hamid Dr. P. Staecker
017... Mark Your Calendar 122... Catalog Update 685 Canton Street, Norwood, MA 02062
Tel: (781) 769-9750
FAX: (781) 769-5037
Copper
63.546
RCOoMPH S
LIANT
www.coilcraft.com 800/322-2645
Miss out on MTT?
Tour our booth at
minicircuits.com!
CeramiC FiLTerS
Low Pass bandPass HigH Pass
Value Packed
Recession Busters! from 99¢
ea. qty.1000
In today’s tough economic situation there is no choice: Reducing cost while
improving value is a must. Mini-Circuits has the solution…pay less and get more
for your purchases with our industry leading ultra small ceramic filters.
our web store and have a unit in your hands as early as tomorrow!
COMPLIANT
AUGUST 2011
31 1 2 3
EMI 4 5 6
by the
NIWEEK 2011
Austin, TX
Dashboard
7 8 9 10
Light 11 12 13
MVP
Webinar:
Optimizing Battery
Call for Papers
Anritsu
Operating Time
Broadband
Founded in 1958
Deadline VNA
mwjournal.com
14 15 16 17 18 19 20
AUVSI Unmanned Systems N. America 2011
EMI Washington DC
21
Dashboard
22 23 24 25 26 27
Light
28 29 30 31 1 2 3
Go to: www.mwjournal.com/events
MICROWAVE JOURNAL JULY 2011 17
AMPLIFIERS C oming E vents
for all applications
AMTA 2011
SUPER WIDE BAND 0.01 TO 20 GHz CALL FOR PAPERS 33rd Annual Symposium of the Antenna
Measurement Techniques Association
MILCOM 2011 October 16–21, 2011 Englewood, CO
Deadline: August 12, 2011
www.amta2011.org
IEEE MEMS 2012
Deadline: September 11, 2011 MWP 2011
www.mwjournal.com/events IEEE international Topical Meeting on
Microwave Photonics
October 18–21, 2011 • Singapore
JULY www.mwp2011.org
Really accurate full wave 3D Electromagnetic software for really smart people--high
frequency designers. While we can’t raise your IQ, we can raise your success rate on
high frequency designs.
Smart engineers demand smart software. Sonnet gives you unmatched accuracy Download a
free QR barcode
as a standalone tool, or within your preferred microwave EDA design framework. app on your
smartphone.
(877) 7-SONNET
High Frequency Electromagnetic Software www.sonnetsoftware.com/13
©2011 Sonnet Software, Inc. All rights reserved. SONNET® is a registered trademark of Sonnet Software, Inc.
Agilent and ADS are registered trademarks of Agilent Technologies
AWR and Microwave Office are registered trademarks and the AWR logo is a trademark of Applied Wave Research, Inc.
Cadence and Virtuoso are registered trademarks and the Cadence logo is a trademark of Cadence Design Systems, Inc.
Cover Feature
EMI by the
Dashboard Light
A
s the automobile industry bounces back the first UMTS-enabled A8s would go on sale
from the great recession, manufactur- later this year.
ers are designing their next generation Ford has also been at the forefront of de-
of cars with an eye on fuel economy and tele- veloping market leading telematics and info-
matics (information and communication tech- tainment services for its vehicles. This wireless
nologies). Increasingly, the cars being designed connectivity is being driven in part by the chal-
today represent the latest frontier in the wire- lenges of introducing a fleet of electric cars to
less revolution. While luxury cars have been a market that has evolved around petroleum-
integrating RF/microwave sensors, navigation fueled vehicles. In March, Ford Motor Co.
and communication systems for several years and AT&T announced their collaboration to
now, delivering enhanced safety, traffic man- wirelessly connect Ford’s first all-electric pas-
agement and in-car entertainment through car- senger car. Using an embedded AT&T wireless
to-car and car-to-network communication is on connection and the “MyFord” mobile smart-
the rise in cars of all prices. phone app, vehicle owners will be able to send
At Mobile World Congress last February, and receive data about their electric car, pro-
chip maker Qualcomm announced a partner- viding command and control of vehicle settings
ship with Audi to develop capability that would remotely. This will enable owners to plan trips,
provide a “bubble of connectivity” for travel- monitor the vehicle’s state of charge, receive
ers, allowing them to access web-based ser- various alerts for vehicle charging, as well as
vices at high speeds of travel. The Audi A8 will other features designed to support electric ve-
feature the Mobile Media Interface Plus in-car hicle ownership.
navigation system, which will act as a mobile Ford also unveiled a new range of special-
“hotspot,” enabling passengers to connect Wi- ized car-to-car WiFi networks intended to al-
Fi enabled devices to the Internet. low cars to automatically negotiate following
The satellite navigation system will have distances and lane changes in an effort to avoid
Google Earth built-in, providing drivers with potential traffic hazards. According to the auto-
high resolution, three-dimensional satellite im- maker, the technology works over a short-range
agery. Audi has stated that the system, when WiFi system on a secure channel allocated by
combined with a street atlas and other online the FCC and allows 360 degree traffic cover-
content, can provide real-time route planning, age even without direct line of sight. This latest
location-specific points of interest or local res- implementation of “collision avoidance radar”
taurant reviews, as well as up-to-the-minute includes predicting collision courses with un-
traffic information. The system utilizes Qual- seen vehicles, seeing sudden stops, and spotting
comm’s UMTS technology to provide the high (continued on page 22)
speed data network that will make it possible
for Internet-enabled devices to connect to the David Vye
web while moving at highway speeds. Audi said Microwave Journal Editor
20 MICROWAVE JOURNAL n JULY 2011
Explore the
EM simulation universe
Y Get equipped with leading edge Now even more choice for EMC/EMI
EM technology. CST’s tools enable you simulation. The extensive range of tools
to characterize, design and optimize integrated in CST STUDIO SUITE enables
electromagnetic devices all before going into numerous applications to be analyzed
the lab or measurement chamber. This can without leaving the familiar CST design
help save substantial costs especially for new environment. This complete technology
or cutting edge products, and also reduce approach enables unprecedented simulation
design risk and improve overall performance reliability and additional security through
and profitability. cross verification.
Simulation of cancer treatment
by RF thermoablation. Involved in biomedical applications? You Y Grab the latest in simulation technology.
can read about how CST technology was Choose the accuracy and speed offered by
used to simulate biomedical devices at CST STUDIO SUITE.
www.cst.com/biomed. If you’re more
interested in filters, couplers, planar and
multilayer structures, we’ve a wide variety
of worked application examples live on our
website at www.cst.com/apps. CHANGING THE STANDARDS
Sign up today!
www.comsol.com/conference
© 2011 COMSOL. COMSOL and COMSOL Multiphysics are registered trademarks of COMSOL AB.
Other product or brand names are trademarks or registered trademarks of their respective holders.
Cover Feature
EMI by the
Dashboard Automotive EMI/EMC Simulation
Light
T
he term electromagnetic com- after exposure or by a manual reset sources capable of producing the de-
patibility (EMC) often con- operation. A major concern for au- sired field strengths ranging from 25
jures up images of FCC test tomotive EMI engineers is that a car V/m to 100 V/m and beyond. The test
labs, computing and/or wireless de- can contain as much as five kilometers covers the range of frequencies from
vices. However, in the automotive in- of wires. While cabling is an obvious 10 kHz up to 18 GHz. During the test,
dustry, the unintentional creation and source of EMI in a car, there are a all embedded electronic equipment
reception of electromagnetic fields, number of other sources, especially in must perform flawlessly. This flawless
a definition of electromagnetic inter- modern cars, which are packed with performance also applies to the fre-
ference (EMI), is becoming an ever electronic devices. Lastly, it is impor- quency sweep of the source antenna.
greater concern. As automobiles be- tant to note that drivers also introduce Performing the ISO 11451-2 stan-
come mobile hotspots and as the elec- potential EMI sources in the form of dard test can be a very time consuming
tronic content (wireless links, multi- cell phones or smart phones, tablets process, requiring expensive equipment
media devices, electronic control and other Bluetooth-enabled devices. and access to a very expensive test facil-
modules, electric hybrid drives, etc.) For the above reasons, conven- ity. Hence, numerical simulation can be
of automobiles continues to increase, tional EMI/EMC procedures and a cost-effective means to reduce the de-
the control of and design for EMI and techniques may not be appropriate sign cycle of the product as well as its as-
EMC become ever more important. for these new components and elec- sociated R&D costs. Full vehicle Finite
As a result of this rapid electrifi- tronic devices. To address this, there Element Method (FEM) simulation
cation of automobiles, a number of are a few automotive standards trying has become possible within the past few
applicable standards have come into to reduce the probability of EMI oc- years by using the domain decomposi-
existence. One of the earliest of the curring in vehicles by making use of tion method (DDM) that was pioneered
industry directives was issued in Eu- one of several laboratory tests. One of by and available within the ANSYS
rope in 1972 as Automotive Directive the most important of these standards HFSS product. The DDM process par-
72/245/EEC. This directive was cre- is ISO 11451-2. This standard speci- allelizes the entire simulation domain
ated to deal with the electronic spark fies that the electical performance by creating a number of sub-domains,
plug noise. Since that time, the In- of all electronic subsystems remains each of which are solved on different
ternational Standards Organization, unaffected by electromagnetic distur- computing cores or various comput-
the Society of Automotive Engineers, bances that are generated by a source ers connected to a network. While the
and CISPR have created a variety of antenna, radiating the vehicle-under- DDM procedure allows engineers to
standards specifically for the automo- test inside an anechoic chamber. simulate entire vehicles, recent develop-
tive industry. The international standard ISO ments in simulation technology offer a
These standards are designed to 11451-2 applies to road vehicles and superior approach to solving large elec-
ensure that all on-board systems con- is meant to determine the immunity tromagnetic structures. The technique
tinue to function properly during ex- of private and commercial vehicles to is called the hybrid Finite Element
posure to EMI or automatically return electrical disturbances from off-vehi- Boundary Integral (FE-BI) method-
back to normal operating conditions cle radiation sources, regardless of the ology and has been made available in
AMPLIFIER
SHIELDED ENCLOSURE vehicle propulsion system, including the ANSYS HFSS product within the
ROOM
hybrid electric vehicles (HEV). The last year (featured as a technical article
RF ABSORBER
test procedure prescribes that the in the January 2011 issue of Microwave
test be performed on a full vehicle Journal).
in an absorber-lined shielded enclo- FE-BI is a numerical method that
sure, which is meant to create a test uses an Integral Equation (IE) based
ANTENNA
VEHICLE AND
environment that simulates open field solution as a truncation boundary for
TURN TABLE
testing. For this test, it is typical that the FEM problem space. This com-
(a) CONTROL ROOM the floor is not covered with absorb- bination of solution paradigms allows
ing material, but such covering is al- users to dramatically reduce the solu-
lowed. An example of a rectangular tion volume that needs to be solved
shielded enclosure is shown in Figure by the FEM method, resulting in a
1a. Figure 1b shows a virtual test faster and more efficient simulation
chamber as modeled in a 3D electro- approach. Figure 2 shows how FE-
magnetic simulation software package
(i.e. HFSS).
Testing for the ISO 11451-2 stan- Markus Kopp
dard consists of generating radiated ANSYS Corp.,
s Fig. 1 ISO 11451-2 test setup (a) and electromagnetic fields using a source Canonsburg, PA, and Juliano
HFSS virtual test chamber (b). antenna with radio frequency (RF) Fujioka Mologni, ESSS, Brazil
IE
–4.00 entire test chamber
was reduced to two
–6.00 much smaller air
high gain antenna
boxes, which were
–8.00
very conformal to
0
–10.00 the structures they
-45
contained. The sur-
-90
–12.00 faces of the confor-
-135 mal air regions are
Phase Degree
-180 –14.00
100 200 300 400 500
now extremely close
-225
FREQUENCY (MHz)
to the antenna and
-270 the vehicle. The two
-315 s Fig. 3 Comparison of validated far-field behavior using three dif- sub-domains of the
-360
ferent methods. FE-BI models are
1.4 1.6 1.8 2.0 2.2 2.4 shown in Figure 4.
Frequency (GHz)
The absorber
6-bit L-band Phase Shifter: all phase states elements of the
anechoic chamber
Phase Shifters were not modeled in
this simulation be-
Extending our leadership cause the IE bound-
in high accuracy semiconductors ary in FE-BI is
equivalent to a free
M/A-COM Tech phase shifters
s Fig. 4 Two sub-regions used to simultaneously solve using FE-BI space simulation,
solver.
provide a comprehensive set of which is equivalent
solutions for active antennas,
to absorbing materi-
al used in a physical
such as phased array for measurement. This
communications and radar. reduction in volume
reduces the size of
To learn about all our products the problem to be
and capabilities, visit solved and thereby
leads to a faster
macomtech.com simulation. For this
simulation, the total
computation time
was 28 minutes,
which represents an
s Fig. 5 Electric field on the surface and cross-section of a vehicle 11 reduction in
for FEM and FE-BI. time compared to
MICROWAVE JOURNAL n JULY 2011
THE U LT I M AT E
avionics
rf/microwave instrumentation
Other ar divisions: modular rf • receiver systems • ar europe
USA 215-723-8181. For an applications engineer, call 800-933-8181.
In Europe, call ar United Kingdom 441-908-282766 • ar France 33-1-47-91-75-30 • emv GmbH 89-614-1710 • ar Benelux 31-172-423-000
Copyright © 2011 AR. The orange stripe on AR products is Reg. U.S. Pat. & TM. Off.
COVER FEATURE
The first simulation contains all the fields as well as the scattering param- PCB ONLY
above mentioned geometry as well as eter of the two simulations (with and
the car and source antenna. Figure 8 without wiring harness) are easily cal-
shows the results of the first simulation culated using the FE-BI solver and
of the electric field based on a config- are plotted in Figure 8.
uration of three wiring harness cables. It is possible to observe a reso-
For the second simulation the wiring nance on the PCB when it is con-
PCB WITH HARNESS
harness is removed and, the random nected to the wiring harness. The fre-
CAN J1939 signal is applied directly quency of this resonance is a function
into the connector on the PCB instead of the cable length that is attached to
of at the sensor location at the bottom the PCB. Additionally it is seen that
of the engine. The electromagnetic the coupling between source antenna
(a)
CURVE INFO
Narda’s Extensive V(IC)
Family of In-Stock
Directional Couplers
0 5 10 15 20
TIME (µs)
3.20
2.20
V(IC)[V]
1.20
0.20
–0.80
0 5 10 15
TIME (µs)
(b)
350
Narda’s family of in-stock directional couplers
EYE PROBE
150
offer an extensive combination of physical Model 27002SC
Directional Coupler –050
and electrical performance characteristics to –250
0 10 20 30 40
meet the needs of system designers, original TIME (ns)
equipment manufacturers, and lab users. (c)
Drop-In ?
Operating Temperature:
-55° to +85° C
Reverse Polarity Protected
Internal Voltage Regulator
Smallest Housing Just Remove Connectors!
RoHS Compliant
Features Benefits
Reduced planar Lower manufacturing costs
resistor variation due to decreased tuning
®
RT/duroid Low thermal coefficient Stable electrical performance
6202PR of dielectric constant versus temperature
Low coefficient of High reliability in complex
thermal expansion multilayer designs
Photos used by permission from Northrop Grumman Corporation. Advanced Circuit Materials
USA - AZ, tel. +1 480-961-1382 • EUROPE - BELGIUM, tel. +32 9 235 3611 • www.rogerscorp.com/military
Cover Feature
0.9 –20
noise sources lead to unwanted distur-
0.8 –40
bances. The automotive OEM’s spend 0.7
a considerable amount of time and –60 0.91713
0.6
~60% of
–80
money to avoid such effects or reduce 0.5 the applied
0.4 energy is 0 0.5 1.0 1.5 2.0 2.5 3.5
them to a minimum. Without special radiated
0.3 FREQUENCY (GHz)
filtering, a significant disturbance sig- 0 400 800 1200 1600
(b)
nal in GSM D-net can be measured FREQUENCY (MHz)
between 890 and 940 MHz.
This article shows an example of s Fig. 3 EM wave propagation direction
using 3D EM simulation with CST s Fig. 2 Power balance plot for aluminum (a) and E-field magnitude vs. frequency for
cooling bracket. the amplifier region (b).
Microwave Studio for solving a GSM
immunity issue. After setting up a illuminated with a plane wave in the easily done by investigating the power
model with the relevant electrical and frequency range of interest. balance, i.e. the relation of applied
mechanical components, a combina- Figure 1 shows a 3D magnetic power and the power that is coupled
tion of several effects that introduce field plot at 920 MHz inside the radio out through all ports in the system. If
disturbances to the system has been enclosure. The red color highlights ar- the power balance is equal to 1, all the
found. The system could then be opti- eas with high magnetic field strength; energy is kept in the system and there
mized within a few days by simulating the blue color indicates regions with is no emission effect. If the power bal-
the whole device architecture, leading small or zero magnetic field strength. ance is smaller than 1, there is radia-
to a reliable and cost-effective solu- Shown by the red regions in Figure tion of EM fields by the structure. In
tion. 1, there is a resonance effect in the case of the aluminum cooling brack-
These signals also propagate to the metallic enclose. Now the real work et, there is actually an imbalance of
loudspeaker lines. The GSM pulse begins for EMC engineers: Why does power in frequency range above 200
(217 Hz) from a GSM mobile phone this resonance occur at all? MHz. A maximum of about 60 per-
is demodulated in the audio ampli- Experience tells us that the reso- cent of the applied energy is radiated
fier. In the car, the GSM pulse can be nance effect might come from the au- in frequency range between 800 MHz
heard clearly, which is not acceptable dio amplifier surround with its alumi- and 1 GHz as shown in Figure 2.
for the customer. num cooling bracket. There is a reso- Since one weakness of the system
In order to investigate these effects nance cavity, created by the amplifier is known, one can concentrate on this
and to come up with corresponding holder, the electrolyte capacitors, the in more detail. All parts that are not
techniques, the device is simulated PCB structure and the cooling brack- relevant for the further investigations
with 3D simulation software. The et (made of aluminum). can be removed from the model to in-
CAD model (e.g. from CATIA) is im- As a first step, it is interesting to crease simulation speed. Some probes
ported and the material properties of check what happens if the aluminum are placed into the amplifier region in
the different parts are adjusted for 3D cooling bracket is fed with a wideband
field calculation. As a first step, the signal and how much energy is lost Matthias Tröscher
bare electronic device (car radio) is due to emission effects. This can be CST, Darmstadt, Germany
© 2011 Agilent Technologies, Inc. (U.S. Army photo by Spc. Patrick Tharpe) (Released)
Cover Feature
order to calculate the electric field in sults are shown in Figure 4. There As an effect, the capacitance be-
the cavity. The structure is illuminated is no resonance anymore at 917 MHz tween the crimp pad and PCB GND
with an electromagnetic plane wave for all three geometrical E-field com- reduces the impedance between the
again as shown in Figure 3a. ponents so this is an improvement. housing and PCB GND around 900
There is a strong resonance at 917 This information is quite helpful MHz and reduces the quality of the
MHz for all three geometrical E-field in order to tune the resonance cav- cavity as shown in Figure 5b. There is
components x, y and z as shown in ity. Instead of crimping the amplifier no resonance effect left. That had not
Figure 3b. What is causing the reso- holder directly to the PCB (and to been possible by isolating or soldering
nance at 917 MHz? Maybe the elec- the PCB GND structure), the idea is the holder to PCB GND. The effect
trolyte capacitors? to connect the holder by means of 5
One can try it again, removing pF capacitors to PCB GND as shown
them in a second simulation. The re- in Figure 5a.
E_Cav_x [pw]: –33.067494
E_Cav_y [pw]: –55.975272
0
–20
–40
–60 0.917
5pF
Operating Current (a)
Inductance Insertion Return DC
Part Number Frequency Handling
(µH) Loss** Loss** Resistance
Range* (DC max.)***
H-field (Y; –126 25-10)(2C5P)[pw]: –50.056896
500 KHz 7.0 Ω typ. H-field (Y; –126 25-10)(isolated holder)[pw]: –33.657139
ATC 506WLC110KG115B 11 typ. 0.4 dB typ. -18 dB typ. 115 mA DC
to 40 GHz @ 10 mA H-field (Y; –126 25-10)(soldered holder)[pw]: –34.403387
2.9 Ω typ.
PROBE MAGNITUDE (dBV/m)
0.15
MAGNITUDE
0.10
0.05
0
800 850 900 950 1000
FREQUENCY (MHz)
(a)
0.010
MAGNITUDE
0.005
0
800 850 900 950 1000
FREQUENCY (MHz)
(b)
www.cobham.com
Cover Feature
EMI by the
Dashboard An Update on Automotive Emc Testing
Light
E
lectronic components are in- will be required. To enhance the
creasingly critical in the safety efficiency in the conversions,
TABLE I
and functional features of faster switching time is desired. Automotive EMC TESt STandards
automotive vehicles. Moreover, the However, abrupt switching dur- Standard Bodies Applied Testing
world is also increasingly connected ing the conversions will gener- Vehicle Comp. EMI EMS
through electromagnetic communica- ate harmonic components that
tions. Electromagnetic compatibility might emit unintentional elec- ISO-11451 Yes No No Yes
(EMC) of various electronic parts in- tromagnetic energy through ISO-11452 Yes Yes No Yes
ternal to automobiles as well as com- interface wires and/or through ISO ISO-7637 No Yes No Yes
patibility to the environment that they radiations. These may gener-
ISO-10605 Yes Yes No Yes
operate in are becoming more chal- ate internal and external EMC
lenging to designers in automotive problems in a vehicle design. CISPR CISPR 12 Yes Yes Yes No
industries. EMC testing at both full Additional design effort and CISPR 25 Yes Yes Yes No
vehicle and component levels serves verification testing are required 95/94/EC Yes Yes Yes Yes
as one of the critical links to the over- to ensure optimum balance is EC
all integrity and functional verification ECE R.10.3 Yes No Yes Yes
achieved.
of automotive vehicle designs. This On the other hand, vehicles IEC 61000/3/4/6 Yes Yes Yes Yes
article provides an overview of the re- with advanced safety features SAE J551 Yes No Yes Yes
cent trends in the industry and EMC and intelligent cars are in de-
SAE J1113 No Yes Yes Yes
testing requirements. mand by consumers. These ad-
ditional safety and operational GMW 3091 Yes No Yes Yes
Introduction features are most commonly GM GMW 3097 No Yes Yes Yes
Starting from the mid-1990s, achieved through the use of GMW 3103 No Yes Yes Yes
electronic components had already electronic systems installed in
outweighed their mechanical coun- the vehicle. EMC challenges for the requirements are applied primarily by
terparts in the overall content of a ve- critical safety and operational func- suppliers of electronic parts contract-
hicle. This trend continues and there tions are also new topics to designers ed by the automakers. Most automo-
is no reason that it will stop. “Today’s in the auto industries. tive testing requirements are defined
cars are 4-wheel vehicles with dozens Facing the increased complexity and issued by regional organizations,
of computer systems,” summarized of the automotive EMC challenges, i.e. European Union (EC) and Ameri-
Professor Todd Hubing of Clemson both system and component design- can (SAE), international (CISPR, IEC
University at the 2011 Asia Pacific ers of automotive vehicles are relying and ISO), and manufacturers (GM,
EMC (APEMC) Symposium. “To- more and more on both signal integ- Ford, VW, etc.). More detailed illus-
morrow’s cars will be computer sys- rity planning on the PCB and module trations of these EMC test standards
tems with 4 wheels,” he added.1 Ow- levels to reduce the risk level of EMC and their recent development can be
ing to the extensive design and testing issues, and on testing for final verifi- found in articles and symposium di-
efforts by the auto industries, today’s cations. Although EMC testing is not gests by Wiles2 and Shin.3
cars are safer than ever, but there is the final solution of the automotive Among the standards shown in
also room for further improvements. EMC problems, it serves as an early Table 1, recent development activi-
A sharp increase of fossil fuel burn- warning system to detect system de- ties have focused on automatic EMC
ing cars in the recent years has stressed sign EMC problems, and provides a testing in the ISO, CISPR, and IEC
the world’s limited supply of fossil fuels. means to simulate post-accident prob- standard bodies more than the other
Sparked by the rising cost of fossil fuels, lems to aid the development of solu- regional bodies. These standard bod-
green vehicles and related technological tions. Therefore, EMC testing also ies are focused on EMC issues on
developments are increasingly desired. plays an increasingly important role in electric vehicles and/or fossil fuel
Hybrid and electric vehicles are strongly automotive system developments. electric hybrid vehicles. The ISO-se-
incentivized by governments and wel- ries of test standards are focused on
comed by consumers around the world. Auto EMC Testing the immunity issues while the CISPR-
One of the most common approaches Requirements Updates series test standards are focused on
to increasing the energy efficiency is to Automotive EMC testing require- the emission limits on these vehicles
recover kinetic energy and to convert ments can be separated into two dis- at charging modes. Also noted is that
it into electric energy to store in bat- tinctive categories, full vehicle or the European communities are faster
teries. The stored energy can then be component levels. The full vehicle in developing test standards address-
converted to kinetic energy on demand. testing requirements are most com-
Throughout the process, a series AC/ monly practiced by major automak- Kefeng Liu
DC, DC/DC, and DC/AC conversions ers, while the component level testing ETS-Lindgren, Cedar Park, TX
40 MICROWAVE JOURNAL n JULY 2011
General Purpose RF Switches
Select Switches Available from Stock for Prototype or High-Volume Production
Skyworks Solutions offers a select group of switches from our overall switch portfolio that are in stock and ready
for immediate design into your demanding applications.
Smart Energy, Broadband, Cellular Infrastructure, Test & Measurement, Military (COTS)
Description Frequency (GHz) Insertion Loss (dB) Isolation (dB) Input IP3 (dBm) Input P1 dB (dBm) Part Number
SPDT (R) 0.0003–2.5 0.3–0.4 25–24 48 30 AS169-73LF
SPDT (R) 0.1–2.5 0.3–0.55 30–17 56 37 (0.1 dB) SKY13270-92LF
SPDT (A) 0.1–6.0 0.8–1.5 62–42 46 30 SKY13286-359LF
SPDT (R) 3.0–8.0 0.7–0.9 25–22 47 26 SKY13298-360LF
SP3T (A) 0.5–2.5 0.9–1.2 62–55 43 30 SKY13277-355LF
SP4T (A) 0.5–3.0 0.4–0.9 45–25 40 26 AS204-80LF
USA: 781-376-3000 • Asia: 886-2-2735 0399 • Europe: 33 (0)1 43548540 • Email: sales@skyworksinc.com
www.skyworksinc.com • NASDAQ: SWKS
Cover Feature
absorber treatment only start at 80
MHz and above. The specification
assumes that the near-field coupling
dominates the overall energy transfer
between the test antenna and the test
object in the frequency range below
80 MHz. However, a simple electric
field dipole coupling model analysis
presented by Liu7 shows a different
result. Figure 4a presents the ratio
of the total amount of transferred en-
ergy to the energy from the radiating
component of two electrically small
dipoles at 1 m separation distance.
As presented, the near-field coupling
overwhelmingly dominates the energy
transfer for test frequencies below 20
MHz (greater than 10 dB). Above 200
MHz, the radiating far-field compo-
nent dominates the energy ratio (by
more than 10 dB since the ratio shows
<-10 dB). To examine the transition
frequency range between 20 and 200
MHz, a ratio of reactive energy to the
radiating components demonstrates
an alternating variation of radiating
s Fig. 1 One of four General Motors’ Mil- energy in this frequency range with a
ford full vehicle EMC test chambers. (Image
courtesy of ETS-Lindgren.) peak at 50 MHz. Again, at above 100
MHz, the near-field coupling dimin-
ing the advent of the EMC problems ishes to an insignificant amount.
presented by the electric vehicles and Figure 4 (a and b) illustrates the
by their operating environment. s Fig. 2 Chassis dynamometer turntable importance of good ALSE boundary
(a) and its support filtered AC/DC power sys- conditions in the overall measurement
Automotive EMC Test tem (b). (Image courtesy of ETS-Lindgren.) uncertainty component EMC testing
Facilities are most frequently used for EMS test- in an ALSE in the frequency range
Full vehicle EMC test facilities ing, especially the safety features of the of 20 to 200 MHz. Since most of the
are normally built by major automak- vehicles at most known test conditions. electric inverters and converters for
ers and government agencies around Therefore, efficiency in test setups for electric and/or hybrid vehicles oper-
the world. Figure 1 shows one of the EMS test is often the most critical utili- ate in lower MHz frequency range, a
General Motors’ full vehicle EMC zation factors of the test facility. good ALSE room that provides good
test chambers with most of the vehicle The component test chambers termination conditions of the shielded
electromagnetic immunity test setups are also often called Absorber Lined wall can be very important for improv-
released. The EC directive and some Shielded Enclosures (ALSE) and a ing the measurement uncertainty and
manufacturers’ internal standards also detailed definition of ALSE dimen- the repeatability of the test results.
require that the vehicle’s Electromag- sions and absorber treatment require- Thus, an ALSE treated with ferrite
netic Immunity (Susceptibility, EMS) ments can also be found in the refer- tile-based hybrid absorbers can be a
be tested at simulated motion speed(s) ences.4,5,6 To incorporate the EMC preferred choice for automotive com-
and at braking mode. This will require test capability on the electric motor/ ponent test chambers, especially for
that the full vehicle EMC test chamber generator module of the electric/hy- testing such vehicles’ components be-
be equipped with a chassis dynamom- brid vehicle, a shielded drive shaft will tween 20 to 80 MHz.
eter turntable. As shown in Figure 2, be needed to provide the drive/load In addition to ALSE and anechoic
the chassis dynamometer and its driv- simulation for testing the EMC of the chambers, reverberation chambers
ing system will add to a substantial control unit in the motor generator have also been introduced for auto-
amount of complexity of the overall module. The shielded shaft must be motive EMC testing. The reverbera-
facility construction. In addition, to ac- designed to transfer and withstand the tion chambers, test method has been
commodate the required EMC testing maximum torque output by the elec- adopted into SAE J1113-27 and the
on electrical and/or hybrid vehicles, tric motor through ALSE IEC 61000-4-21:2011. The most com-
the charging station and its interfaces As shown in Figure 3, the ALSE mon use of reverberation chambers is
to vehicle at charging mode will be room is generally setup for near-field test for radiated immunity testing because
needed to complete the full vehicle distance at 1 m separation between the the reverberation chambers are capa-
test capability. The full vehicle test antenna and the EUT interface cables. ble of generating high field intensity
chambers and its test instrumentation The ALSE specifications for the level requiring much lower amplifier
42 MICROWAVE JOURNAL n JULY 2011
Any complex modulated signal in;
accurate signal power measurement out.
www.analog.com
Cover Feature
power than that of free space test set- using just 1 W of drive power at the total space of the chamber can also be
up. A well-built reverberation cham- antenna port at prior to EUT loading. achieved through the introduction of
ber is capable of generating > 25 V/m Large test volume of up to 8 percent one or more stirrers. Figure 5 shows
typical configuration of automotive
FEED THROUGH EMC testing utilizing reverberation
methods for both component and full
vehicle radiated immunity testing.
>2 m Typical constructions of reverberation
>1 m
chambers are for testing frequencies
0.9 m FROM AXIS OF above 80 MHz to be efficient in both
ANTENNA
OR FROM SMALLEST cost and building space utilization.
7.01 m ELEMENT IN LPDA EUT CAN BE UP TO
(23 ft) 1 m ± 10 mm 100 100 cm
Conclusion
EUT 1.5 m LISN Widespread use of computer and
10 cm
energy conversion systems present
2.5 m
>2 m new EMC challenges in modern car
Ratio (in dB) of power densities
near-field component to the radiating
RFSA2013/RFSA2023
Voltage Controlled Attenuators, 50 to 4000MHz
SPECIFICATIONS
Minimum Gain Control Input 1dB Supply
Freq Range Insertion Loss Range Compression Point IIP3 Voltage Package
(MHz) (dB) (dB) (dBm) (dBm) (V) (mm) Part Number
FEATURES
• Patent pending circuit architecture • Power supply:
• Broadband 50 to 4000MHz frequency range o 5V for RFSA2013
o 3.3V for RFSA2023
• 30dB attenuation range
• +50dBm IIP3 typical • Linear in dB control characteristic
• +80dBm IIP2 typical • Internal temperature compensation
• High 1dB compression point >+30dBm • Class 1C ESD (1000V)
• Low supply current 1mA typical • Complete solution in small 3 x 3mm QFN package
• Applications include: cellular, 3G infrastructure; WiBro, WiMAX,
LTE; microwave radio; high-linearity power control
25 C
IIP3 (dBm)
S21 (dB)
-40 C
25 C
85 C
-40 C
85 C
S21 (dB)
VC (V)
REVERBERATION
CHAMBER
TUNER LISNs
EUT
VOLUME OF 1 METER
UNIFORM
FIELD
FIELD GENERATION
ANTENNA POINTED
INTO CORNER OF
CHAMBER WITH TUNER
BULKHEAD/FILTER
PENETRATIONS SHIELDED
SIDE-CHAMBER
EUT MONITORING FIELD GENERATION
EQUIPMENT AND EQUIPMENT AND
ELECTRICAL LOADS MOTOR CONTROLLER
(b)
(a)
s Fig. 5 Component (a) and full vehicle reverb test chambers (b). (Image courtesy of ETS-Lindgren.)
design. An efficient EMC test facil- safer and much more fuel efficient Testing,” Tutorial Workshop Digests on “Intro-
duction to Automotive EMC Testing” at the 2011
ity can provide fast-track design vali- than before due to the introduction APEMC, Jeju, S. Korea, May 2011.
dation for faster completion of both of electronic control systems. Our ef- 4. ISO 11452 Components - Vehicle Test Methods
for Electrical Disturbances by Narrowband Radi-
component and full vehicle integrity. forts in automotive EMC are to aid the ated Electromagnetic Energy.
Just as traffic laws cannot avoid auto speedier introduction of more sophis- 5. CISPR 25 Ed 3.0(2008-03) Vehicles, Boats and
accidents, EMC design planning and ticated computer systems to the car for Internal Combustion Engines-Radio Disturbance
Characteristics - Limits and Methods of Measure-
testing cannot totally eliminate the further improvement in the safety and ment of Radio Disturbance Characteristics for the
automotive EMC problems as the efficiency of the future vehicles. Protection of Receivers.
electronic systems in the car get more 6. SAE J1113 Electromagnetic Compatibility Mea-
surement Procedures and Limits for Vehicle Com-
and more complex. However, we can References ponents.
1. Todd Hubing, “Ensuring the Electromagnetic
minimize automotive system malfunc- Compatibility of Safety Critical Automotive
7. Kefeng Liu, “Site Definition and Validation for Au-
tomobile Component Test Chambers,” Invited Pre-
tions due to EMC problems through Systems,” Invited Plenary Speaker at the 2011
sentation at Society of Automotive Engineers (SAE)
our design and testing efforts. Having APEMC, Jeju, S. Korea, May 2011.
Work Group Meeting, Detroit, MI, April 2002.
2. Martin Wiles, “An Overview of Automotive EMC
said that, it does not mean that the cars Testing Facilities,” Automotive EMC Conference
8. IEC 61000-4-21:2011 Ed. 2.0 Electromagnetic
compatibility (EMC) - Part 4-21: Testing and
we drive are not safe because of EMC 2003, Milton Keynes, UK, November 6, 2003.
Measurement Techniques - Reverberation Cham-
issues. On the contrary, cars are much 3. Jaekon Shin, “Automotive EMC Standards and
ber Test Methods.
MOST VALUABLE PRODUCT
A
nritsu Co. has developed the ME7838A PERFORMANCE
broadband vector network analyzer Among the many advantages of the ME7838A
(VNA) system that provides single- is improved RF performance, due to an industry
sweep coverage from 70 kHz to 110 GHz with first, real-time power leveling control that pro-
operation from 40 kHz to 125 GHz, and utilizes vides the industry-leading power accuracy and
an advanced design that eliminates the need for stability to power levels as low as -55 dBm in the
large, heavy millimeter-wave (mmWave) modules millimeter-wave band. The approach employed
and coax combiners. The ME7838A provides en- in the ME7838A takes less time, is less tedious,
gineers, designers and researchers with a sys- and more accurate than the conventional meth-
tem that conducts highly accurate and efficient od of adjusting power level in the millimeter
broadband device characterization of active and band through the use of electronically controlled
passive microwave/mmWave devices, including mechanical attenuators and power linearity cor-
those designed into emerging 60 GHz wireless rection tables. The VectorStar® broadband
personal area networks (WPAN), 40 Gbps and system provides an accurate and fast real-time
higher optical networks, 77 and 94 GHz automotive method to sweep power for compression mea-
radar, digital radio links, 94 GHz imaging mmWave surements. The result is that the ME7838A per-
radar, and Ka-band satellite communications. forms highly accurate gain compression mea-
The ME7838A is also well suited for conduct- surements of high frequency active devices.
ing signal integrity measurements on emerging With the ME7838A design, mmWave modules
high speed designs, such as 28 Gbps serializer/ can be mounted close to or directly on the wafer
deserializer (SerDes) transceivers used on serv- probe. The ME7838A offers the widest dynamic
ers, routers and other networking, computing range in its class, 107 dB at 110 GHz and 92 dB
and storage products. The ME7838A, equipped
with the 3743A mmWave module, can accurate-
ly measure 28 Gbps SerDes transceivers at the Anritsu Co.
higher frequencies required for proper analysis. Morgan Hill, CA
48 MICROWAVE JOURNAL JULY 2011
RF Signal Generators
There’s always room for improvement
100 kHz
to 3 GHz
$8,749
...
G Hz ...
DC to 4
$4,600
You’ll even like the ne print: US List Price $4,600. Standard features: DC to 4.05 GHz with 1 µHz resolution. Output power from +13 dBm to
–110 dBm. Phase noise of –116 dBc/Hz at 20 kHz offset from 1 GHz. A 1 s Allan variance of 1 × 10–11. 10 MHz timebase input and output. AM, FM,
ΦM, pulse modulation and sweeps from internal or external sources. Ethernet, GPIB, and RS-232 interfaces. Option 1: Differential clock outputs on
SMAs with 35 ps transition times ($750). Option 2: Rear-panel SMA output for 4.05 GHz to 8.10 GHz ($750). Option 3: I/Q modulator with exter-
nal BNC inputs ($750). Option 4: Rubidium timebase for 0.001 ppm/yr aging ($1500). Please visit www.thinkSRS.com for complete specications.
TABLE I
Dynamic range and noise fLOOR performance versus frequency
Frequency Range System Dynamic Range (dB) Receiver Dynamic Range (dB) Noise Floor (dBm)
ME7838A ME7838A ME7838A ME7838A ME7838A ME7838A
Option 062 Option 062 Option 062
70-300 kHz 93 90 89 86 -83 -80
0.3-2 MHz 103 100 103 102 -93 -90
2-10 MHz 115 112 115 114 -105 -102
0.01-2.5 GHz 120 117 121 122 -110 -109
2.5-24 GHz 110 105 121 121 -110 -108
24-54 GHz 110 107 124 123 -114 -113
54-60 GHz 108 108 122 122 -112 -112
60-67 GHz 108 108 117 117 -107 -107
67-80 GHz 108 108 120 120 -110 -110
80-85 GHz 107 107 123 123 -113 -113
85-90 GHz 107 107 121 121 -111 -111
90-105 GHz 107 107 117 117 -107 -107
105-110 GHz 107 107 122 122 -112 -112
110-120 GHz* 98 98 115 115 -110 -110
120-125 GHz* 92 92 112 112 -107 -107
* 110-125 GHz frequency range is available as operational
In addition to
Tr1 S21 Trans LogM RefLvl: 0 dB Res: 20 dB/Div
40 >M1:10.0000644 GHz –116.1403 dB –9.6 a1/1 characterizing high
20 POWER METER frequency devices
POWER (dBm)
0 –9.8
–20 for communications
S21 (dB)
50 MICROWAVE
MICROWAVEJOURNAL
JOURNALnnJULY
JULY2011
2011
Well connected
Rosenberger
Coaxial Connectors
and Cable Assemblies
play a key role in many high-tech-applica-
tions – such as telecommunications, radio
base stations, automotive electronics,
test & measurement applications, aerospace
engineering, modern data networks, medical
electronics etc.
Our comprehensive product range covers
RF-coaxial connectors, automotive con-
nectors, adaptors or test & measurement
products such as high-precision connectors,
calibration kits, test cables and many more.
New:
l Multiport coax connections –
for semiconductor test equipment
applications
l Passive intermodulation analyzers –
rack and portable types, site analyzers.
T
he ever-increasing demand for high ca- 60 GHz. Radios operating in this 60 GHz band
pacity data communication, in particular have unique characteristics that make them
last mile communication, is asking seri- significantly different from radios operating
ous questions of operators and the technology in the traditional 2.4 and 5 GHz license free
they employ. Radio bands allocated for data bands. These qualities give 60 GHz millimeter-
communication have restrictions and are, with wave band radios operational advantages not
few exceptions, subject to a national license. found in other wireless systems.
These licenses are in high demand, expensive This article provides an overview of these
and their attainment can often require a lot of advantages and argues why 60 GHz millime-
paperwork and be subject to bureaucracy. ter-wave radio technology presents the optimal
License-free bands, such as the 2.4 and 5 opportunity, which translates into reliable and
GHz bands, see WLAN (IEEE 802.11 a/b/g/n) affordable gigabit-plus wireless connections.
and PAN (Bluetooth) competing for the allo- The main advantages are:
cated bandwidth and neither Quality of Ser- • S
pectral availability to achieve gigabit-plus
vice (QoS) nor security can be guaranteed in data rates
this congested environment. All parties are on • H
igh transmit power for solid signal strength
the same frequency band and are relying on and range
Carrier Sense Multiple Access with Collision • Worldwide availability and acceptance
Avoidance (CSMA/CA). Many applications • License exempt operation
demand communication links to have a com- • N
arrow beamwidth and oxygen absorption
bination of high speed and security, while also for interference immunity and highly secure
being license-free and inexpensive with instant operation.
set up. All of this cannot be achieved via tradi-
tional wireless license exempt bands. SHANNON’S LAW
Large bandwidth coupled to high transmit
LICENSE-FREE V-BAND power equals high data rates. Sufficient spec-
There is a band that is just coming on
stream that can meet all of these requirements Hans O Johansson
– namely the worldwide license-free V-band at Sivers Ima, Kista, Sweden
52 MICROWAVE JOURNAL JULY 2011
COMMAND SIGNAL PROCESSING ENTERPRISE COMM. INFO SERVICES
+ CONTROL + DATA COMM. NETWORK MGMT. ASSURANCE
RF Channel
Simulation
UAV TX
Op Center RX
When communications
really count
THE INTEGRAL DIFFERENCE
TM TM
the maximum possible data rate increas- All of these factors allow companies
15
es with increasing channel bandwidth to maintain operational efficiencies
10 and effective transmit power. So, the while delivering high performance
60 GHz band is capable of achieving 80 wireless products.
5
times the maximum possible data rate
of the 802.11a/b/g/n MAC layer. INTERFERENCE-FREE
0 25 50 75 100 125 150 AND SECURE
FREQUENCY (GHz) WORLDWIDE AVAILABILITY Let’s consider the technology –
s Fig. 2 Attenuation behavior for 60 GHz
As previously stated, the major- oxygen attenuates 60 GHz signals that
signals. ity of the globe has allocated 7 GHz travel over large distances, meaning
that oxygen absorbs radio emissions
– a property that is unique to the 60
GHz spectrum. This absorption weak-
ens the 60 GHz signals over distance,
so that signals cannot travel far beyond
their intended recipient. While this
limits distances that they can cover, it
also offers interference and security
advantages when compared to other
wireless technologies.
Another consequence of oxygen
absorption is that radiation from one
particular 60 GHz radio link is quickly
reduced to a level that will not inter-
fere with other 60 GHz links operat-
ing in the vicinity. This reduction of-
fers the opportunity for more 60 GHz
radio enabled devices to successfully
operate within one location.
Frequency re-use
The particular attenuation behav-
ior for 60 GHz signals (shown in Fig-
ure 2) can thus be used to define a
primary usable range for the link in
question. Of course, this range varies
with the hardware parameters – EIRP,
bandwidth, noise figure, modulation
and acceptable QoS.
Beyond this range lies a zone that
can be visualized as a spatial guard
band. In this zone, the emitted power
DISTANCE (km)
can be divided into three segments;
FREQUENCY RE-USE Wireless Gigabit (WiGig) is an indoor-
embedded high capacity technology
3 SPA
TIA L G U A R D B A N D for household components like con-
2 99.99 9 % LIN K sumer electronics, handheld devices
55 60 and PCs.
FREQUENCY (GHz) The distance will be around 10 m,
with speeds in the gigabit range; RF
communication outdoors at high
s Fig. 3 Illustration of frequency re-use speed using highly directive antennas
and the spatial guard band. means that distances of up to several
kilometers can be bridged; finally, oth-
er applications utilize a variety of user
interfaces like video, telemetry, data,
60 GHz TRANSMITTER and radio.
<2 km RADIUS
99.999% LINK The 60 GHz technique for out-
2<3 km RADIUS SPATIAL door communication is not in reach
GUARD BAND for all R&D departments of poten-
>3 km RADIUS
FREQUENCY RE-USE tial customers. But, there are many
vendors of Wi-Fi products who
would have a strong desire to get
into the 60 GHz band and be able to
s Fig. 4 Frequency re-use. offer a more complete license-free
band product.
from a transmitter gradually falls off
to a level where the received signal CONCLUSION
level no longer yields an acceptable The 60 GHz band is a good choice
QoS. As the distance is increased, for wireless applications requiring
the received signal will fall below the gigabit-data rates, especially consid-
level for interference criteria, and as ering the large bandwidth and high
distance is further increased, the sig- transmit power. Out of all the avail-
www.anadigics.com nal will virtually disappear below the able wireless technologies, millime-
noise floor. ter-wave brings the world closer to the
■ WCDMA/HSPA MIXED Depending on how the system is promise of gigabit and multi-gigabit
MODE PA’S configured, a safe operating range for wireless speeds at the longer range
■ LTE ■ CDMA/EVDO frequency re-use can be calculated. required for bandwidth intensive ap-
■ EDGE & WIMAX PA’S This is efficient from a frequency al- plications.
■ 50 OHM GAIN BLOCKS location perspective and is especially
WIFI PA’S & Hans O Johansson has been in the data
■
useful for dense high capacity links. communication business for 30 years
WIFI FRONT ENDS The most efficient frequency re- and in wireless communication since
use can be expected exactly where 1996. He founded and ran GlobalCast
the atmospheric attenuation peaks Internetworking AB, which was the first
and is concentrated in a fairly nar- to establish a public high speed wireless
row band around 60 GHz. This is data network in Sweden. The company
depicted in Figures 3 and 4, with was sold to Telia, in 1998, forming Telia
typical figures for moderate data GlobalCast Internetworking AB, with
Johansson as the company’s president. In
transfer rates.
2000, Johansson left Telia GlobalCast and
The high antenna gains that are founded Wireless Matrix AB to exploit
typical for 60 GHz systems come, the wireless networks on a European and
in part, from the Friis Equation worldwide basis and the introduction
for Path Loss. This equation, also WiMAX in Europe. Since 2005, he has
known as Friis’ Law, states that the worked with a market leader in mobile
gain possible from an antenna of any communication with multiplexers and
given size increases by the frequen- base station TMAs and is now acting as
cy squared. product manager of mm-wave products
for Sivers IMA AB, Kista, Sweden.
60 GHZ MARKET OPPORTUNITY
We Have A Chip For That
The market for 60 GHz products is
L
Begin Work on Defense Weather ockheed Martin announced it submitted a proposal
Satellite System in response to the government’s Request for Proposal
for the next phases of the Joint Air-to-Ground Missile
N
orthrop Grumman Corp. has received authorization (JAGM) program. “Lockheed Martin’s JAGM builds on
and funding to proceed on a Department of Defense HELLFIRE, LONGBOW and Javelin, three of the most
weather satellite system projected for launch in 2018. trusted precision-guided weapons on the battlefield today,”
The Defense Weather Satellite System (DWSS) will lever- said Frank St. John, Vice President of Tactical Missiles at
age the accomplishments and momentum of the National Lockheed Martin Missiles and Fire Control. “Our JAGM
Polar-orbiting Operational Environmental Satellite System offering will provide US Army, Navy and Marine Corps
(NPOESS) program. The company announced it received warfighters with the next product in that line, an affordable
authorization from the US Air Force Space and Missile weapon that will offer the decisive edge in combat.”
Systems Center (SMC) at Los Angeles Air Force Base, CA, The US Army Aviation and Missile Command issued
to transition work from the NPOESS contract and proceed the RFP for Engineering and Manufacturing and Low-
under the DWSS program. DWSS will provide enhanced Rate Initial Production for the JAGM program on April 13,
weather information critical to battlefield operations, and with a submittal deadline of June 6. “Our proposed JAGM
deliver it more quickly to the warfighter than current sys- weapon system can provide significant performance advan-
tems. tages to help save warf-
“For DWSS, we have defined an effective program ighter lives,” St. John “Our proposed
plan that leverages the high level of maturity achieved said. “And with hot, JAGM weapon system
on the spacecraft and sensors that are already in produc- high volume production
tion, and we continually work closely with the Air Force lines already in place can provide significant
to pursue efficiencies throughout the program,” said Lin- for HELLFIRE, Javelin performance
nie Haynesworth, Vice President and DWSS Program Di- and the M299 launcher
rector for Northrop Grumman Aerospace Systems. “Our family, we can provide a advantages to help
team is prepared to immediately execute a successful and critically needed capabil- save warfighter
affordable program to bring this critical capability to the ity at an affordable price
warfighter.” and with best value over lives...”
The DWSS is a critical program life.”
successor to the Defense Lockheed Martin is partnered with some of the industry’s
“Our team is Meteorological Satellite leading suppliers on the JAGM program. Aerojet, a Gen-
Program (DMSP), which Corp company, will provide the JAGM rocket motor for all
prepared to has been delivering six threshold JAGM platforms. GenCorp is headquartered
immediately execute weather data for military in Sacramento, CA, with production facilities in Camden,
use since the mid-1960s. AR. Marvin Engineering, headquartered in Inglewood, CA,
a successful and Timely completion of will provide launchers for all six threshold platforms. Gener-
affordable program DWSS is essential to al Dynamics Ordnance and Tactical Systems, a business unit
maintain continuity with of General Dynamics, will provide the multi-purpose war-
to bring this critical the current DMSP sat- head with significant HELLFIRE commonality. GD-OTS
capability to the ellites and establish a is headquartered in Saint Petersburg, FL, with production
backup in the event of a in Niceville, FL. Work on the JAGM program will be per-
warfighter.” launch or satellite failure formed in Orlando and Ocala, FL, and Troy, AL, as well at
on orbit for the remain- suppliers’ facilities across the US Contract award is expected
ing two DMSP satellites. during fourth quarter 2011.
Time-sensitive weather data delivered promptly is critical
to military operations planning and warfighter and weap-
ons deployment. Advanced Firefinder Radar System
The DWSS is required to provide reliable, high-fidel-
ity, near real time information about weather and envi- Supporting US Troops
T
ronmental conditions around the world to inform avia- halesRaytheonSystems announced that advanced
tion, naval, and coastal marine operations and land assets. Firefinder radars have been fielded in theater sup-
DWSS will also provide information needed to protect porting and protecting US troops and allies. Reliabil-
space-based assets from solar and other space weather ity and maintainability improvements have been added to
conditions. the AN/TPQ-37 Firefinder Weapon Locating Radar sys-
R
Firefinder systems. It is known as the Reliability Maintain- aytheon Co. has received a contract from Boeing for
ability Improvement (RMI) program. Forty percent of de- the second procurement in the four-year Multi-Year
liveries are complete with final delivery scheduled in 2013. III program to produce and deliver APG-79 active
“These RMI systems can be deployed with confidence electronically scanned array radars for F/A-18 Super Hor-
for effective operations in challenging environmental condi- net tactical aircraft. The APG-79 AESA radar hardware has
tions,” said Kim Kerry, Chief Executive Officer, ThalesRay- a 10 to 15 times greater reliability, compared to mechani-
theonSystems, US Operations. “The Firefinder moderniza- cally scanned array radars. This reliability and easy main-
tion provides the US Army and allies around the world with tainability makes AESA radars more affordable over the
the capabilities needed for detection and troop protection.” service life of the unit.
Firefinders are precise detection and location systems “In addition to lower failure and maintenance rates,
designed to find enemy artillery, mortar and rocket firing APG-79 AESA radars provide the US Navy leading-edge
positions. The radar also predicts impact zones and trans- technology for situational awareness,” said Eric Ditmars,
mits data to friendly forces, allowing time for effective Raytheon’s F/A-18 Program Director, Tactical Airborne
counter-fire tactics. Nearly 400 Firefinders are deployed Systems. “The long-range capability allows aircrews more
by 18 nations worldwide. Sized for easy transport, they are time to process, share and assess information.”
prized for their accuracy, mobility, reliability and low life- This procurement contract is for the production of 42 APG-
cycle costs. Along with its Improved Sentinel Battlefield 79 AESA radars and will be completed at Raytheon facilities
Air Defense Radar (AN/MPQ-64F1) and the AN/TPQ-36 in El Segundo, CA; Andover, MA; Forest, MI; and Dallas, TX.
T
the-art global satellite
he use of graphene-based electronic devices for RF navigation system, pro- perfect example
and microwave applications has become high profile viding a highly accu- of European and
and the subject of cutting edge research, various as- rate, guaranteed global
pects of which were outlined at the 2011 IEEE MTT-S positioning service
international
IMS in June. Recognising the importance of the material, under civil control. cooperation.”
the European Commission is funding a coordinated ac- The first two Galileo
tion on graphene to develop plans for a 10-year, €1,000 M satellites will be deployed using a Soyuz launcher and the
Future and Emerging Technology (FET) flagship. launch will mark the inaugural Soyuz flight from its new
The research effort of launch facilities in French Guyana.
“…exploiting the individual European re- Emphasising the significance of the launch, Dordain
search groups pioneered
full potential of graphene science and
said, “The October launch will be a perfect example of
European and international cooperation. On one side we
graphene will have technology, but a coor- will have the first operational Galileo satellites in orbit, re-
dinated European level
huge impacts on approach is needed to
sulting from the cooperation between the European Union
and ESA. On the other side, this is the first launch of Soyuz
society...” secure a major role for from French Guyana, a programme made possible through
EU in this ongoing tech- the cooperation between ESA and Russia.”
nological revolution. The graphene flagship aims to bring “Arianespace is both proud and honoured to be contrib-
together a large, focused, interdisciplinary European re- uting to this innovative project, reflecting the innovative
search community, acting as a sustainable incubator of new technologies that are constantly being developed in Eu-
branches of ICT applications, ensuring that European in- rope for the benefit of all citizens,” said Jean-Yves Le Gall,
dustries will have a major role in this radical technology Chairman and CEO of Arianespace.
shift over the next 10 years. An effective transfer of knowl-
edge and technology to industries will enable product de-
velopment and production.
The graphene flagship already includes more than 130
Cassidian Delivers Telecommunications
research groups, representing 80 academic and industrial Harmonisation for French Military
C
partners in 21 European countries. The coordinated action assidian has delivered the third phase of the Ré-
is lead by a consortium of nine partners who pioneered seaux de Desserte Terre et Marine (RDTM) proj-
graphene research, innovation and networking activities. ect as the military base in Toulon, France, enters
It is being headed by Chalmers University of Technology, operation. The objective of the RDTM project is to
Sweden. harmonise the voice systems currently in place at the
“We are convinced that exploiting the full potential of French land army bases (MTGT system) and at the
graphene will have huge impacts on society at large, and French naval bases (RVDM system), to create a single
thrilled that the EU Commission shares our view and be- system in accordance
lieves in our focused and open approach to moving for- with the new struc-
ward,” said Professor Jari Kinaret of Chalmers University ture of Direction RDTM makes it
of Technology. Interarmées des Ré- possible to centralise
seaux d’Infrastructure
et des Systèmes the control and
Europe Prepares for October Launch d’Information de la monitoring of
of Galileo défense (DIRISI),
systems…
T
the operator of the
he launch date for the first two satellites of Europe’s RDTM system. A
Galileo global navigation satellite system will be 20 Oc- further objective of this measure is to reduce network
tober 2011. This will be the first of a series of Galileo maintenance costs.
satellite launches by Arianespace from Europe’s Spaceport RDTM makes it possible to centralise the control
in French Guyana. The announcement follows a detailed and monitoring of the systems and networks at the new
review, under the chairmanship of Jean-Jacques Dordain, control centres and of the local maintenance facilities in
the Director General of the European Space Agency (ESA), France. The unification of the telecommunication net-
with the participation of Arianespace and industrial prime works at all French army and navy bases covers a total of
contractors, which concluded that the space and ground ele- 180,000 users at nearly 800 locations.
ments will be ready for a launch in October.
T
my. The challenge now
he Institution of Engineering and Technology (IET), is to increase the extent to which government departments
Europe’s largest engineering body is calling on the make use of SBRI.”
UK government to ensure its procurement policies SBRI is based on the US government’s National Science
are used to maximum effect to drive innovation through Foundation scheme, which has provided numerous new
the use of the Small Business Research Initiative (SBRI). innovative solutions for public services as well as providing
The call to action from the IET follows its hosting of a high many companies with a financial basis on which they can
level meeting, which brought together officials from across then build. Companies involved in the schemes have gen-
government to discuss the role of engineering companies erated cumulative total sales of $2.2 B directly and $6.9 B
in SBRI. indirectly attributable to their involvement in the scheme.
offers a large selection of broadband doublers, triplers, quadruplers, and x12 frequency multipliers.
Now generate output frequencies from 100 kHz to 20 GHz with excellent suppression of fundamental frequency
and undesired harmonics, as well as spurious. All featuring low conversion loss and designed into a wide
array of, off-the-shelf, rugged coaxial, and surface mount packages to meet your requirements.
Visit our website to choose and view comprehensive performance curves, data sheets, pcb layouts,
and environmental specifications. And you can even order direct from our web store and have a unit
in your hands as early as tomorrow! Mini-Circuits...Your partners for success since 1969
W
No
Up to 20 GHz !
SIM
0.1
MH
z-2
0G
Hz
$ 95
Rugged, tiny ceramic SIM mixers from ea. qty.1000
.
4
environments, including high ESD levels, the SIM
offer unprecedented wide band, high frequency mixers are competitively priced for military,
performance while maintaining low conversion 0.2"x 0.18" industrial, and commercial applications. Visit our
loss, high isolation, and high IP3. website to view comprehensive performance
Over 21 models in stOck are available to operate data, performance curves, data sheets, pcb layouts,
from an LO level of your choice, +7, +10, +13, and and environmental specifications. And, you can
+17 dBm. So regardless of the specific frequency even order direct from our web store and have it in
band of your applications, narrow or wide band, your hands as early as tomorrow!
there is a tiny SIM RoHS compliant mixer to select Mini-circuits...Your partners for success since 1969
from 100 kHz to 20 GHz. Built to operate in tough U.S. Patent # 7,027,795 RoHS compliant
In-Building Wireless Development Revenue introduced by vendors to leverage the flexibility of packet
transmission. “New features, such as support for upper pro-
to Approach $10 B in 2012 tocol layer compression, service-aware routing and G.8032
I
n-Building Wireless (IBW) systems are showing solid Ethernet resiliency, are now focusing the attention of ven-
adoption rates and, according to the latest forecasts dors,” said Maravedis Research Director Adlane Fellah.
from ABI Research, should register almost $10 B worth Key Findings:
of deployments next year. Corporate campuses, airports • CALA was the only region where microwave shipments
and railway stations, and retail shopping centers (in that increased in 2010, while EMEA continued to represent
order) are the leading verticals where the need for good in- the largest share of microwave shipments (48.8 per-
door cellular coverage and throughput is driving the IBW cent).
market. Healthcare facilities follow close behind. The eco- • Shipments of radios in the 15 to 28 GHz range have
nomic recovery now under way in many regions has meant been the greatest in 2010.
the resumption of deployments that were shelved during • Shipments of hybrid radios accounted for 72 percent of
the worst of the slump. the total shipments.
The question “who’s buying?” may have different an- • Ericsson remained the market leader with 26 percent
swers from building to building, depending on who has market share in 2010.
most to gain: enterprises, building owners, transport au- • Shipments of TDM radios increased 16 percent and 27
thorities, mobile operators, or others. There is also a role percent in Q3 and Q4 2010, respectively, despite the IP
for managed service providers. The majority of deploy- migration trend.
ments will continue to be found in the Asia-Pacific region, • Pure packet will account for 90 percent of annual mi-
but while the Asia-Pacific region accounts for the major- crowave radio shipments by 2016.
ity of IBW deployments, most innovation is coming from • Intensive integration efforts enable equipment vendors
North America. to double equipment reliability (measured by MTBF,
To learn more about the IBW, visit ABI Research’s mean time between failures). All the microwave ven-
“In-building Wireless Systems” study, which covers DAS dors will be forced to follow this strategy to remain price
(Distributed Antenna Systems both active and passive), competitive.
repeaters, and the role currently played by picocells and The report provides a complete quantitative and quali-
femtocells in IBW. It includes a detailed breakdown of rev- tative analysis of the wireless backhaul market, including
enue, deployments, and shipments by region, system type, vendor SWOT analysis for Alcatel-Lucent, Aviat, Bridge-
vertical type and building size. Wave, Ceragon, DragonWave, E-Band Communications,
ECI Telecom, Ericsson, Exalt, Huawei, Intracom, NEC,
Nokia Siemens and Siklu.
Microwave Backhaul Equipment Market to
Surpass $12 B by 2016 Microelectronic Revenues Continue
T
he microwave backhaul equipment market is expect-
ed to surpass US$12 B by 2016, according to the sec- Strong Growth
R
ond edition of Maravedis’ “Wireless Backhaul Market ecent financial reports from companies in the micro-
from an All-IP Perspective” report. electronics portion of the compound semiconductor
During 2010 the PtP microwave backhaul market industry indicate continued sharp revenue growth.
reached $4.74 B, representing an 18.9 percent decrease The Strategy Analytics GaAs and Compound Semiconduc-
year-over-year. During the next five years the microwave tor Technologies Service (GaAs) viewpoint, “Compound
market will continuously grow, mainly driven by the need Semiconductor Industry Review April 2011: Microelec-
for operators to deploy new base stations to provide good tronics,” reports the latest revenue results for leading
quality of experience over LTE networks. Despite a recent companies in the microelectronics segment of the com-
slowdown in all-outdoor radio shipments, Maravedis be- pound semiconductor industry, such as RFMD, Skyworks
lieves those radios will see great market demand. “Com- Solutions, Fairchild, Fujitsu, Hittite Microwave, TriQuint
pact-size 60 GHz radios will become a key asset for back- Semiconductor, Soitech and WIN Semiconductors.
haul links between lampposts and the sides of buildings, “The strong revenue reports which Strategy Analytics
where small cells will be installed,” said Esteban Montu- saw in April show continued compound semiconductor
rus, author of the report. “Assuming a growing percentage market expansion,” noted Eric Higham, Director of the
of the network will need the complement of several small Strategy Analytics GaAs and Compound Semiconductor
cells per macrocell, the number of 60 GHz links is thus Technologies Service. “Growth in this industry is broadly-
expected to grow to $792 M shipments by 2016.” based as both gallium arsenide (GaAs) and silicon manu-
Now that the evolution toward pure packet microwave facturers are showing strong year-on-year revenue gains.”
technology is maturing, multiple enhancements are being Asif Anwar, Director, Strategy Analytics Strategic Tech-
market applications. This is certainly the case at RFMD * Courtesy of Strategy Analytics
PACIWAVE, INC.
Microwave Custom Components & Subsystems
1286 Hammerwood Ave., Sunnyvale, CA 94089 USA web: www.paciwave.com
Phone +1-408-745-0385 FAX +1-408-745-7835 email: sales@paciwave.com
, LT, LTC, LTM, Linear Technology and the Linear logo are
registered trademarks of Linear Technology Corporation. All other
trademarks are the property of their respective owners.
A ROUND THE C IRCUIT
Kerri Germani, Staff Editor
Vanguard EMS and Tektronix Component Solutions
INDUSTRY NEWS have signed a joint marketing agreement to formalize their
collaboration and the joint offering of their capabilities to
Skyworks Solutions Inc. signed a definitive agreement
customers in the defense, aerospace, medical and industri-
to purchase Advanced Analogic Technologies Inc.,
al equipment markets. While companies in these markets
an analog semiconductor company focused on enabling
frequently seek to control costs through outsourced manu-
energy-efficient devices for consumer electronics, com-
facturing, finding suitable suppliers can be challenging due
puting and communications markets. This acquisition
to the high-complexity and high-reliability requirements of
expands Skyworks’ portfolio with highly complementary
their products. Through the collaboration of Vanguard and
analog semiconductor products, including battery char-
Tektronix, customers now have access to the engineering,
gers, DC/DC converters, voltage regulators and LED
manufacturing and test services needed to support their
drivers. Skyworks has entered into a definitive agreement
assembly requirements from the microelectronics level to
to acquire Advanced Analogic Technologies for a nominal
final system build and test.
price of $6.13 per share, representing a 52 percent pre-
mium to Advanced Analogic Technologies’ 30-day trailing
Rosenberger of North America LLC and Toth Tech-
average.
nologies have formed a strategic alliance. Under the
agreement, Toth will do business as Rosenberger TOTH
Integral Systems Inc. announced that it has entered into
and will operate from TOTH’s Pennsauken, NJ headquar-
a definitive agreement under which it will be merged with
ters. Founded in 1958, TOTH Technologies is a technol-
a subsidiary of Kratos Defense & Security Solutions
ogy leader in custom machining, complex electromechani-
Inc. in a cash-and-stock transaction for an enterprise value
cal “contract assembly” and hermetics to the military, aero-
of approximately $266 M. Kratos is a specialized national
space and instrumentation markets.
security technology business providing mission critical
products, services and solutions for national security pri-
Litron, an Agawam, MA supplier to the aerospace and
orities. The Boards of Directors of both companies have
medical industries for services in laser welding, laser sys-
unanimously approved the combination. The combined
tems, hermetic sealing, and electronic packaging, has in-
company will provide differentiated, integrated technology
vested more than $1 M to purchase a 9500-square-foot fa-
that addresses the most critical national security priority
cility just four doors down from its existing 23,500-square-
areas. Combining the two highly complementary technol-
foot facility and to upgrade and expand upon its equipment
ogy and customer portfolios is designed to uniquely posi-
and service offerings. The new 45 Bowles Road facility will
tion the merged company to bring advanced Command,
allow Litron to break out its service offerings based on its
Control, Communications, Computing, Combat Systems,
two most prominent industries, medical and aerospace.
Intelligence, Surveillance and Reconnaissance (C5ISR)
The existing 207 Bowles Road facility will service the medi-
platforms to market.
cal clientele, while the new 45 Bowles Road building will
service the aerospace clientele.
API Technologies Corp. announced the successful com-
pletion of its acquisition of Spectrum Control Inc. API
M2 Global Technology Ltd. was presented with the
completed the acquisition through a merger of a wholly-
US Small Business Administration (SBA) 2011 Region
owned subsidiary with and into Spectrum. As a result of
VI Subcontractor of the Year award during the SBA’s Na-
the merger, all outstanding shares of Spectrum common
tional Small Business Week events in Washington, DC in
stock were converted into the right to receive $20.00 per
May. This award is given to companies in recognition of the
share in cash, without interest and less any required with-
small-business sector’s contributions as subcontractors for
holding taxes. The closing of the acquisition of Spectrum
large federal prime contracts that provide vital products and
allows API to gain significant expertise in RF, sensors and
services to military and civilian customers. The award was
measurement, and power systems management technol-
presented by SBA Administrator, Karen Mills, to Douglas
ogy. It also provides significant scale, manufacturing capac-
Carlberg, M2 Global’s President and CEO, at the National
ity and product diversity.
Awards Breakfast on May 19. In the SBA event informa-
tion, M2 Global was lauded for rising above challenges and
AMETEK Inc. announced that it has acquired Coining
expanding its customer base to include companies such as
Holding Co., a supplier of custom-shaped metal pre-
Lockheed Martin, General Dynamics and Raytheon.
forms, microstampings and bonding wire solutions for in-
terconnect applications in microelectronics packaging and
TriQuint Semiconductor Inc. announced its Chief Fi-
assembly, for $148 M in cash. Coining, acquired from an
nancial Officer, Steve Buhaly, was named “CFO of the
investor group led by Chattanooga, TN-based River As-
Year” at The Portland Business Journal’s annual awards
sociates Investments LLC, has estimated annual sales of
program. Buhaly received the honor in the public company
approximately $65 M.
category. Buhaly is a consultant to TriQuint’s business units
Booth 5683
Giga-tronics an-
Using Modeling & Simulation to Assess Antenna nounced the addition
Performance During Platform Integration of two new Regional
Greg Skidmore, Jamie Infantalino, Jim Stack, Remcom Sales Managers cov-
ering the USA, Asia
and EMEA. Henry
Hu will focus on the
ss Henry Hu ss Nick Weidick
Western US and
Asia, and Nick Wei-
dick will focus on the Eastern US and EMEA. Hu has
more than 10 years of experience in the industry with a
strong background in RF and microwave engineering. His
Electronically Scanned Arrays for Fast Testing of career started in engineering and marketing at Kulicke and
Large Antennas Soffa, a semiconductor equipment company, and most re-
L. Durand, L. Duchesne, L.J. Foged , Microwave Vision Group cently, Hu was the Asia Sales Manager for Aeroflex/Me-
telics. Nick Weidick has more than 20 years of experience
in the industry with a strong background in RF and micro-
wave test and measurement. His career started in wired
and wireless communications working for such companies
as Anritsu, Tektronix and AT&T. Most recently, Weidick
Implementation of the Perfectly Matched Layer was a Business Development Manager for MI Technology.
to Determine the Quality Factor of Axisymmetric
Resonators
Presented by COMSOL
REP APPOINTMENTS
RFMW Ltd. and RFaxis Inc. announced a distribution
agreement for the Americas, Europe, the Middle East,
and Africa. RFaxis is a semiconductor company with focus
on developing highly integrated, silicon-based single-chip,
single-die RF front-end integrated circuits (RFeIC) that
Reduce EMC Product Verification Time with Fast significantly simplify the design task and substantially im-
Scanning Techniques prove the range, receive sensitivity and data throughput for
White Paper, Agilent Technologies all major wireless communications protocols.
WEBSITE
East Coast Microwave Distributors has launched a new
online website (www.adaptercity.com) to locate nearly ev-
Frequency Matters. ery RF/microwave coax adapter. The website allows you to
choose from a wide range of manufacturer’s adapters, by
separating commercial-grade adapters from mil-grade ones.
Miss MTT?
10 MHz to 7 GHz
Tour our booth at
minicircuits.com!
IP 3
H I G H
RoHs compliant
$
3
95
from ea. qty. 25
Accounting for
Dynamic Behavior
in FET Device Models
T
oday’s engineer faces a range of chal- ory of past conditions) and/or for how long the
lenges, including inadequate nonlinear change was applied (process/mechanism time
device models that contribute heav- constants). It may be exhibited by all semi-
ily to inaccurate large-signal high frequency conductor devices in response to appropriate
simulation. Because of this, designers need to changes in electrical stimuli, but is particularly
know if a model they are given is suitable for prevalent in applications where large-signal,
their application before they commit a design high frequency signals are present (that is RF
to manufacture. Unfortunately, the hurdle for power amplifiers, mixers, oscillators and high
pre-qualifying a nonlinear model is often per- speed digital circuits). Device technology and
ceived as high, so few engineers will even ask size do impact a device’s dynamic behavior, but
the question: “Is my model good enough?” it is unreasonable to assume that an application
Failure to accurately take into account the employing the latest deep sub-micron silicon
dynamic behavior of a device in its electrical process will be any less likely to exhibit dynam-
model can have a detrimental effect on an ap- ic behavior than a 50 W GaN device.
plication. Therefore, modeling such behavior is Essentially, when a device in a quiescent
essential to accurate nonlinear simulation. (steady) state experiences a change in electri-
A powerful simulation-based qualification cal conditions, that change does not instantly
method now offers designers a viable means result in a new steady-state condition. Rather,
of testing field-effect transistor (FET) device physical processes, each with differing time
models for critical large-signal, high frequen- constants, begin to respond. The observed re-
cy behavioral characteristics at the operating sult is a time variant change in the electrical
point required by an application. This early in- conditions observed at the device terminals.
sight is critical in allowing designers to avoid Consider the case shown in Figure 1, which
costly and time consuming design iterations depicts an Id(t) response of a FET to a step
and their consequences. change in applied voltage. After t = 0, the mo-
bile charge in the channel responds rapidly
Understanding Dynamic Behavior and then I(t) settles down to the “Ifast Plateau”
To better understand why taking a device’s current region. Next, the change in conditions
dynamic behavior into account is so critical, it is affect the channel temperature and, in some
first important to understand exactly what this device technologies, the charge state of traps
behavior is. Dynamic behavior occurs when an
object gives measured results that are a func- Graham Riley
tion of when a change started (implying mem- Agilent EEsof EDA, West Lake Village, CA
80 MICROWAVE JOURNAL JULY 2011
Offer Lowest Power Consumption for Best SNR!
Analog, Digital & Mixed-Signal
ICs, Modules, Subsystems & Instrumentation
14 HMCAD1520 - Precision
HMCAD1100
12/13
HMCAD1050-80
HMCAD1050-40
HMCAD1051-80
HMCAD1051-40
HMCAD1040-80
HMCAD1040-40
10
HMCAD1041-80
HMCAD1041-40
Our Analog-to-Digital Converter (ADC) products provide ultra low power dissipation per channel, ease of use and cost
efficiency while maintaining high SNR / SFDR performance. When coupled with Hittite’s RF & microwave IC solutions these
new ADCs will optimize your system performance.
ENABLE
BAND Vdd
GAP 400mA HMC507LP5E
REF Vtune
HMC976LP3E
RFOUT
VCO with Fo/2,
6.65 - 7.65 GHz
HV
RFOUT/2
Low Noise,
NEW! 3.3 - 5.5 1.8 to 5.1 400 60 30 6 3 1 HMC976LP3E
High PSRR
0.19
for all constant vg traces. The For any given bias Q-point, the
DC-POWER ID VS VD,
0.17
BIAS POINT Id Vd,
0.15
0.13
DC I(V) set shows differing combination of power dissipation and
0.11 values of output conductance the charge state of traps is unique.
0.09 across the plane, with nega- The shape of the pulsed i(v) curves
0.07
0.05
tive values at higher power will vary according to that Q-point.
0.03 dissipation. This difference The ability to track this critical behav-
0.01 is the result of the DC I(V) ior is a major challenge for a device
–0.01
0 2.0 4.0 6.0 8.0 10.0 12.0 curves containing a “hidden” model. Some models are fitted to data
Vd
dependence on channel tem- for a specific characterization Q-point
s Fig. 3I-V plane showing DC I(V), pulsed i (v) and perature and trap state. and only accurately replicate the de-
DC power curves. vice’s dispersive behavior when oper-
ated at that Q-point. Using the model
at an operating point away from that
Q-point usually leads to a degraded
characteristic. How important this
ADVANCED SIGNAL ANALYSIS degradation is to overall accuracy is
application dependant. Few, if any,
TOOLKITS empirical models are able to accurate-
ly cover the general case and, if not fit-
Turn Back the Hands of Time ted using data from multiple Q-points,
will be inaccurate.
Pinch-Off
As with the DC I(V) characteristics,
the pulsed i(v) results should show the
device pinch-off as a function of gate
voltage. Generally speaking, while the
values of Vg at pinch-off may differ,
and the shape of the curves may be
different approaching this region, the
device model should still pinch-off to
Id = 0 for both DC and pulsed data.
Drain Current Offset at the Origin
Some device models cannot accu-
rately predict behavior away from their
pulsed i(v) characterization bias. This
can be seen in an offset at the origin of
• Exceptionally powerful tools for visualizing, analyzing and the pulsed i(v) curves. In cases where
supporting detailed analysis of large signal captures of an obvious offset can be seen, the de-
unlimited size signer must examine the effect of this
artifact on the target application.
• Analyze large signal captures using vibrant, high-resolution
three-dimensional displays Bias Point
The coincident nature of the bias
• Start, stop, slow down, speed up and reverse signals to examine point on both DC I(V) and pulsed i(v)
recorded data characteristics is a given. This condi-
tion is both logical and necessary be-
• Extract and identify signals of interest from large files
cause the DC I(V) characteristic is
effectively the set of quiescent bias
www.xcomsystems.com • 703.390.1087 points from which any pulse measure-
ment can be taken.
X-COM SYSTEMS
EM
ST
! HMC935LP5E
EW
N Analog Phase Shifter, 2 to 20 GHz
Contact Us with Your Custom Analog & Digital Phase Shifter Requirements!
PULSE_gm_vg
DC_GM_VG
0.15
model without any memory capabil- time constants associated with a par-
ity, simulation results will be identi- ticular device or its model. This test 0.10
cal for a given point on the pulse i(v) is often performed to make sure the 0.05
plane, irrespective of the number of simulated fast-pulse i(v) measure-
pulses, their order or coverage of the ments use a sufficiently fast pulse to 0
–5.0 –4.0 –3.0 –2.0 –1.0 0 1.0
Vg
–5 –4 –3 –2 –1 0 1
Vg
Gm vs. Vd
0.25
0.20
PULSE_gm_vd
DC_GM_VD
0.15
0.10
0.05
0
0 10 20 30 40 50 60
Vd
Conclusion
Taking into account the dynamic
nature and behavior of a FET device
in any electrical model is essential for
accurate nonlinear simulations. Fortu-
nately, designers can now use a pow-
erful simulation-based qualification
method to test FET device models for
critical, large-signal high frequency
behavioral characteristics at an oper-
ating point required by their appli-
cation. Additionally, straightforward
qualitative simulated tests can be used
to quickly test the “goodness” and fit
of the dispersive behavior of a given
FET model. Such early insight is criti-
cal to avoiding costly, time-consuming
problems at a later date.
Graham Riley received
his B.S. in Communication
Engineering from
Plymouth University and
a M.S. in Microwaves and
Modern Optics from
University College
London. He is an
Application Engineer for
Agilent Technologies’
EEsof EDA organization, with more than 20 years of
experience in the use and application of analog, RF
and microwave EDA software.
! HMC1030LP5E
EW Dual RMS Power Detector
N
RMS & Envelope Response to WCDMA 4
Carrier with -20dBm RF Input @ 0.9 GHz
2.17 80
ETOUT
1.86 RMSOUT 60
>100 MHz Envelope Detection Bandwidth 1.55 40
for WiMAX/4G/LTE
VET, RMS (V)
1.24 20
RF Input (mV)
0.93 0
Crest Factor Measurement
0.62 -20
±1 dB Detection Accuracy to 3.9 GHz -40
0.31
Programming a
Network Analyzer for
Third-order Intercept
Point Measurement
A
third-order intercept point (IP3) meas- ment of intermodulation distortion (IMD)
urement technique using a network products as a function of the modulation band-
analyzer is proposed in this work. Using width. Consequently, a common measurement
network analyzers to measure IP3 is becom- adopted in this field is to measure the amplifier
ing a trend for modern measurement instru- outputs, including fundamentals and IMDs,
ments.1-3 Generally speaking, extra sources with different tone spacings for a two-tone
and controlling programs are needed to fulfill input excitation.4-5 Using a conventional meas-
this measurement task. The novelty of the pro- urement approach, with a spectrum analyzer
posed measurement method rests upon its abil- plus two sources, can provide the required
ity to perform IP3 measurements, employing measurement,6 but it is inefficient and tedious
a two-tone excitation with a wide frequency to get the third-order intercept point (IP3) in-
spacing in the range of a few hundred mega- formation over a band of frequencies. This is
hertz, which, for example, is used in power because the lack of certain automation of the
amplifier memory effects related research and two external sources, which should sweep fre-
development.4,5 Plus, the industry bandwidth quency synchronously. Using network analyz-
drive potentially demands an IP3 measure- ers can provide the control of external sources
ment with wide two-tone separations, for fu- without extra controlling computers. Previous-
ture wideband devices. The two-tone ampli- ly, a third-order IMD measurement method
tude imbalance related to this method is cali- using a network analyzer has been available.
brated out based upon arithmetic average. The This uses a network analyzer as a controller to
detailed multiple external sources and network control two external sources, providing a certain
analyzer receiver programming techniques amount of automation.2 The reported method
are presented in this article. The agreement makes use of a network analyzer to control two
between the measured results of an ampli- external sources as well as a tuned receiver of
fier using this method and the conventional the network analyzer to measure IMD prod-
method using a spectrum analyzer confirms the ucts, therefore offering a scheme for IP3 meas-
functionality and effectiveness of the proposed urement over a band of frequency. This method
method. With extra power level calibrations at performs best, when the two tones are spaced
different frequency bands, this programming
technique also can be extended to mixer IP3 Zhaolong Li and Xuping Zhang
points measurement. Nanjing University, Nanjing, P. R. China
Recent research on power amplifiers and Ke Wu and Xiaoping Chen
their memory effects requires the measure- École Polytechnique de Montréal, Canada
88 MICROWAVE JOURNAL JULY 2011
DOWN-CONVERTERS
UMS State-of-the-Art offer
UMS is pleased to present its new state-of-the-art family of 6-44GHz Down-Converters.
These provide an optimum solution for the front-end of RF systems.
• Optimum Noise and Gain
• High Linearity
• Gain Control
UMS Down-Converters are available in die or QFN leadless package with guaranteed MSL1.
Contact us:
UMS SAS - North Europe, UMS GmbH - Germany, UMS SAS - South Europe,
Ph: +33 1 69 33 02 26 Ph: +49 731 505 30 80 Ph: +39 0765 480 434
e-mail: mktsales@ums-gaas.com e-mail: klaus.beilenhoff@ums-ulm.de e-mail: danilo.lauta@ums-gaas.com
F1
separated in the while minimizing the interference be-
EXTERNAL SOURCE 1 range of a few hun- tween them, as shown in Figure 1.
dred megahertz. Two external sources are controlled
The introduced by the network analyzer through a gen-
F2 amplitude imbal- eral-purpose-interface-bus (GPIB). The
EXTERNAL SOURCE 2 GPIB CONTROL
ance is calibrated detailed network analyzer calibration
out based on an and multiple source console program-
VECTOR NETWORK
ANALYZER
arithmetic average. ming techniques are explained step by
Plus, compared step as follows.
PORT 1 PORT 2 with the conven- The first step is to establish a 0
tional method,2 the dBm power calibration line. This is es-
proposed method sential because while the two sources
RECEIVER CALIBRATION
can obtain IP3 in- are swept simultaneously, the network
formation with analyzer receiver response shows a
MEASUREMENT only one frequency different absolute power value at the
sweep instead of same frequency. Therefore, the cali-
s Fig. 1 An IP3 measurement setup for an amplifier, using a net- two sweeps, which bration is aimed to establish an inter-
work analyzer.
could potentially pretable power reading based upon
not very far away from each other, that reduce measurement time and be of the input of a known source power
is in the range of a few megahertz.2 interest to manufacturers with a large level. To do this, the two sources are
This is because amplitude imbalance volume of measurement tasks. set to sweep simultaneously with a fre-
will be inevitable, if the two tones are quency span of 2∆F and a power level
widely spaced. Therefore, inaccuracy Network Analyzer of 0 dBm, while the network analyzer
could be generated if this method is Calibration and Multiple receiver is programmed to receive the
applied to the measurement of IMD Source Console input signal consecutively, where ∆F
with a wide two-tone spacing. In this The measurement instruments is the desired two-tone excitation fre-
work, a novel measurement method hardware setup is similar to the one quency spacing. By doing so, the net-
for IP3 is presented, which provides published in Anritsu Application work analyzer receiver real response
the ability to measure the third-order Note,2 where a power combiner is to a known power level at different
IMD with two-tone frequency widely used to combine the two input tones, frequencies, including the two upper
and lower IMD bands and two fun-
damental output bands, is accurately
recorded. A 0 dBm power calibration
line can be established by normalizing
the recorded data to themselves.
The second step is to program the
network analyzer into four different,
consecutive frequency bands. This
way, the network analyzer is pro-
grammed as a receiver, which is oper-
ated on four consecutive bands, F1 to
F4. Each band is used to measure a
different frequency component at the
amplifier output, such as IMD1, OUT
1 (tone 1 output), OUT 2 (tone 2 out-
put), IMD2. The complete multiple
source programming details are listed
in Table 1, where Bandi is a frequency
band of interest, with a width of two
interested products; Fi is a frequency
band of interest, with a width of one in-
terested product; ΔF is the frequency
span separated by two tones.
In order to measure two funda-
mental output signals and two IMD
products through one sweep, two
external sources are programmed to
sweep across the desired bandwidth
synchronously, while the network
analyzer receiver is programmed to
receive four equal bandwidth output
products (equal Fi), namely IMD1
90 MICROWAVE JOURNAL JULY 2011
T ECHNICAL F EATURE
TABLE I
PROGRAMMING MULTIPLE SOURCE CONTROL
FOR IIP3 MEASUREMENT OF AN AMPLIFIER
Frequency External External Receiver Physical Meaning
band setup Source No. 1 Source No. 2
0 dBm power calibration
Receiver tuned to
measure absolute power
Band1 Band1 Band1+2F Band1
level (including two
Band2 Band2-2F Band2 Band2
fundamentals and two
IMDs)
Sources and receiver programming for measurement
F1=IMD1 F1+F F1+2F F1 Receiver tuned to
measure IMD1 level
F2=OUT1 F2 F2+F F2 Receiver tuned to
measure Tone1 output
F3=OUT2 F3-F F3 F3 Receiver tuned to
measure Tone2 output
F4=IMD2 F4-2F F4-F F4 Receiver tuned to
measure IMD2 level
AMPLITUDE
plifier gain, IMD level as well as the
signal-to-IMD ratio are all measured
and can be displayed at the same time.
The third step is to extract the relat-
ed data segment, which represents the
amplifier’s different outputs and per-
IMD1 OUT 1 OUT 2 IMD2
forms post processing. Because the two
tones are widely separated in frequen-
cy, their amplitudes will inevitably have Fig. 2 Four consecutive bands used to
measure four products of an amplifier output.
differences as shown in Figure 2. As
suggested by P. Vizmuller,7 the ampli-
tude imbalance can be calibrated out, arithmetic average used assumes that
based on arithmetic average. There- the outputs of the fundamental tones
fore, the two different intermodulation and IMD products are increased lin-
distortion ratios are averaged and the early with the inputs (when evaluated
amplifier input IP3 is calculated based in dB). Because the datasheet sug-
on this averaged number. gests that the amplifier has an input 1
dB saturation point at approximately
MEASUREMENT RESULTS 2.5 dBm, the two input fundamental
Anritsu network analyzer 37397C excitations are set to -5 dBm and 100
is used in this work. In fact, the above MHz spaced apart. The insertion loss
mentioned method applies both to of the power combining network is
Anritsu 37×××C and 37×××D series calibrated out during the 0 dBm ab-
analyzers. The two external sources solute power calibration. It can also
are Anritsu 68177C and 68037C. The be measured in advance with the net-
amplifier used in this work is a pack- work analyzer following a standard S-
aged microwave integrated circuit parameter measurement and deduct-
(IC) HMC482 from Hittite Micro- ed in data post processing.
wave Corp., which is biased at +7.0 The individual power levels of the
V, 83 mA. The selection of input ex- output signals and IMD products are
citation tones power level should be extracted to perform the amplitude
high enough to be able to excite the imbalance calibration.7 The measured
third-order IMD products, and low amplifier gain, third-order IMD and
enough not to reach the amplifier in- the extrapolated input IP3 (IIP3) are
put P1dB point. This is because the plotted in Figure 3.
POWER (dBm)
10
0 –40
–10
–20 –50
–30 –60
–40 –10 0 10 20 30 40 50
–50 INPUT POWER (dBm)
2.70 2.72 2.74 2.76 2.78 2.80
FREQUENCY (GHz) Fig. 4 Measured results for swept power
at a fixed frequency.
Fig. 3 Measured results of an amplifier
using a network analyzer and a spectrum
analyzer. of the proposed method, the classic
spectrum analyzer approach is used
In order to verify the functionality as a comparison. The agreement be-
of the proposed measurement tech- tween these two measurement meth-
nique, a spectrum analyzer is used to ods confirms the effectiveness of the
make the measurement with the same proposed method.
amplifier and power combining net-
work setup. It is observed from Figure ACKNOWLEDGMENTS
3 that the results obtained from these The authors would like to thank Mr. J.
two measurement methods generally Gauthier and Professor Cevdet Akyel, all
agree, which confirms the functionality with the École Polytechnique de Mon-
of the proposed method in this work. treal, Montreal, QC, Canada, for help-
Meanwhile, the network analyzer ful discussions. Financial support from
measurement setup can also be used the Natural Science and Engineering
to perform a swept power measure- Research Council of Canada (NSERC)
ment at a fixed frequency point. For and Le Fonds Québécois de la Recher-
the same amplifier, the measured re- che sur la Nature et les Technologies
sults are shown in Figure 4 with the (FQRNT) are gratefully acknowledged.
input power swept from -10 dBm to
0 dBm. The extracted IP3 number is References
approximately 15 dBm, which gen- 1. “Agilent 2-port and 4-port PNA-X Network
erally agrees with the results of the Analyzer N5241A Data Sheet.” Available at
http://cp.literature.agilent.com/litweb/pdf/
sweep frequency measurement and N5242-90007.pdf.
verifies the robustness of the pro- 2. “Intermodulation Distortion Measure-
posed method. ments Using the 37300 Series Vector Net-
It is worth pointing out that if work Analyzer,” Anritsu, Morgan Hill, CA,
extra 0 dBm absolute power line Application Note, May 2008. Available at:
http://www.us.anritsu.com/downloads/files/
calibrations are done both at a radio- 11410-00257a.pdf.
frequency band and an intermediate- 3. M. Demmler, B. Hughes and A. Cognata,
frequency band, the same multiple “A 0.5-50 GHz On-wafer, Intermodulation,
source programming technique can Load-pull and Power Measurement Sys-
tem,” 1995 IEEE MTT-S International Mi-
also be used in a three-port mixer in- crowave Symposium Digest, pp. 1041-1044.
put IP3 measurement. 4. J.S. Kenney, W. Woo, L. Ding, R. Raich, H.
Ku and G.T. Zhou, “The Impact of Memo-
CONCLUSION ry Effects on Predistortion Linearization of
This article presents a network ana- RF Power Amplifiers,” Proceedings of the
8th International Symposium on Micro-
lyzer programming technique for IP3 wave and Optical Technology, Montreal,
measurement, using Anritsu network QC, Canada, 2001, pp. 189-193.
analyzer 37×××C, which is featured 5. H. Ku, M.D. McKinley and J.S. Kenney,
with the ability to perform a two-tone “Quantifying Memory Effects in RF Power
Amplifiers,” IEEE Transactions on Micro-
measurement with a wide frequency wave Theory and Techniques, Vol. 50, No.
spacing in the range of a few hundred 12, December 2002, pp. 2843-2849.
megahertz. The detailed network ana- 6. A.E. Bailey, “Microwave Measurements,” Peter
lyzer calibration and multiple source Peregrinus Ltd., London, 1985, pp. 300-311.
console programming procedures 7. P. Vizmuller, “RF Design Guide: Systems,
Circuits and Equations,” Artech House,
are given. To verify the functionality Norwood, MA, 1995, pp. 186-190.
MIXERS
+36 dBm IP3 2 to 3100 MHz from 9
$ 95 ea.
qty. 1000
Mini-Circuits shielded LAVI frequency mixers deliver the breakthrough combination of very high
IP3 and IP2, ultra-wideband operation, and outstanding electrical performance. By combining our
advanced ceramic, core & wire, and semi-conductor technologies, we’ve created these evolutionary
patented broadband mixers that are specially designed to help improve overall dynamic range.
With a wide selection of models, you’ll find a LAVI mixer optimized for your down converter and
up converter requirements. Visit the Mini-Circuits website at www.minicircuits.com for comprehensive
performance data, circuit layouts, and environmental specifications. Price & availability for on-line
ordering is provided for your convenience.
Analysis of 3G Noise to
GPS in 3G Handsets
In this article, an analysis of W-CDMA and GSM TX noises and their effects
on global positioning system (GPS) performance inside a 3G mobile handset is
introduced. The existence of GPS and other services and features in a mobile
handset present a challenge to GPS performance. Particularly challenging are
carriers like GSM and W-CDMA. The transmitter (TX) of the cellular service
interferes with the performance of GPS, due to high TX power and TX band noise
leaking into the GPS band. The degradation will be in the form of an increase
in the total system noise figure (~5.5 dB). The total system noise figure will
contribute a dB-for-dB in sensitivity degradation that is an approximately 5.5
dB loss in received signal strength. The loss in the received signal power leads to
loss of reliable and accurate service and most importantly loss of service in areas
where it is needed most.
R
adio frequency (RF) interference in a closest spectrum to the GPS band and there-
mobile handset has many causes. Close- fore represent the major source of TX band
ness of band spectrum, less spatial isola- noise due to their closeness to the GPS band
tion due to smaller phone size, transmit power with non-ideal transmit filter characteristics.
and transmitter noise due to filter characteris- The increased noise floor results from the fact
tics are some of the elements that lead to un- that a W-CDMA transmitter is always on in a
intentional interference. Because GPS service cell phone, which results in a rise in the noise
and cellular carriers exist in most phones, cel- floor of the total system that will have a one to
lular interference affects GPS performance in one effect on the overall sensitivity. Since the
the following ways: GPS signal operates below the thermal noise
Blocker interference: this type of inter- floor within the given bandwidth, any increase
ference can overload (saturate) the RF front- in noise floor (Equation 1) due to out-of-band
end of the GPS by driving it into compression. wideband noise (W-CDMA TX) would result
Table 1 shows the services, with their TX fre- in GPS performance degradation.
quency bands in MHz that could co-exist with
the GPS service on the same phone. Any TX NoiseFloor=-174+10log(2.046 MHz)
frequency or its harmonic generation with oth- ≅ −111 dBm (1)
er frequencies could fall in the frequency band
of GPS. The front-end filter will not be able to The number -174 (in dBm-Hz) is the ther-
block it because its bandwidth is wide enough mal noise power, which is the kT product of
to let these types of frequencies go through. Boltzmann’s constant and the absolute temper-
Noise Floor (NF): From the Table, it can ature in degrees Kelvin in a 1 Hz bandwidth: k
be seen that the DCS/W-CDMA B4 are the = 1.38 × 10-23 J/K, T = 290K.
RX _ NF =
+J0.2 +J5.0
ML − 1 NF − 1
IL 1 + + (5)
0 0.2 0.5 1.0 2.0 5.0
IL 1 IL 1 ∗ ML
–J5.0
Mitigation Techniques
–J0.2
The above analysis shows that once
–J2.0
the 3G transmitter is on, there is no
–J0.5
way of suppressing its noise effect, un-
–J1.0
RFIC less a 3G PA is designed that has very
INTERNAL LNA stringent requirements on its TX noise
IMPEDANCE
NWTX into the GPS band; say -200 dB/
s Fig. 3 Current GPS RFICs have a built-
Hz, and reduce the 3G power PWTX to
in internal LNA. a lower level, say 15 dBm, whenever
an unsatisfactory level of sensitivity
desired signal is 4 to 5 dB lower than degradation is detected due to 3G TX
the noise floor. That would be a dB- noise. A third way is to reduce the RF
for-dB of sensitivity degradation. The front-end system noise figure by add-
effect of raising the noise floor reflects ing an LNA in the lineup, as shown in
on the tracking capability of the GPS Figure 4. Based on the architecture
receiver. and analysis shown and Equation 6,
NF Due to Mismatch Loss (Return there is approximately 2.5 dB of im-
Loss) provement due to adding the LNA in
the front-end lineup.
Another source of NF is the mis-
match loss. This is due to impedance NF 1 − 1
mismatch between the source of the RX _ NF = IL 1 + +
IL 1
signal and the destination. These are
usually assessed through measure- IL 2 − 1 ML − 1
+
ments and/or simulations and then in- (IL 1)GainLNA (IL 2)(I L1)(GainLNA)
corporated into the system NF equa- NF − 1
tion. This could be incorporated in + (6)
(ML)(IL 2)(IL1)(GainLNA)
Equation 3 as well.
This discussion assumes a 50 Ω in- Conclusion
put impedance into the RF input of
The above analysis and results
the RFIC. Usually, the RF input of
show that if a mobile handset prod-
the RFIC is the input impedance of
uct is chosen to offer both GPS and
the internal LNA of the RFIC, which
3G services at the same time to its
changes based on its bias point con-
customers, design decisions have
ditions. This input impedance is sel-
to be made and sacrifices have to
dom a 50 Ω system. Instead, most
be made. These sacrifices could be
of the time, it falls way down in the
based on performance or cost. If
capacitive region of the Smith chart,
loss of GPS service or sensitivity
as shown in Figure 3. On the other
degradation is acceptable during a
hand, a BPF is a 50 Ω input and out-
3G call, then one might want the
put system. This dictates a matching
cheaper solution with no LNA in the
circuit between the output of BPF
lineup. If, on other hand, one would
(50 Ω in and out) and the input of the
like to maintain a 3G call along with
RFIC and the existence of a mismatch
a better GPS performance, then
loss (ML), due to reflection. When
one might want to make a cost and
the reflection is converted to dB, it is
complexity decision, by adding the
called return loss (RL).
LNA in the front-
end lineup. But the
NF LNA is not the only
ANTENNA
BPF1 NF1 BPF2 MATCH
MATCH component added.
RFIC Its associated bias
IL1 GAINLNA IL2 ML circuitry, matching
circuitry and anoth-
s Fig. 4 GPS receiver possible front-end. er bandpass filter in
Build-to-Performance
TM TM
Certified System
Certified System
Appendix: Measurement
Procedure
Figure A1 shows an outline of the
proposed measurement procedure
and equipment needed.
PC GPS DEVICE
CONTROLLING GPS
THE GPS DEVICE ANTENNA
COMBINER
3G TX NOTCH
FILTER
See website for complete specications and our complete line of bias tees. –156
–158
–160
–162
–157 –153 –149 –145
INPUT SIGNAL LEVEL (dB)
+1.888.7.REMCOM (US/CAN)
+1.814.861.1299
Electromagnetic Simulation Solutions www.remcom.com
T echnical F eature
Apparatus needed: Procedure (see Figure A1): 5. The signal out of the combiner
1) A PC controlling the GPS device. 1. The PC controls the GPS simulator goes in the GPS SMA pig tail coax.
2) USB connection. 3) Any device with to run at a certain power level. There is a 15 dB of isolation rep-
GPS service. 4) A GPS antenna. 5) A 3G 2. The GSM/W-CDMA transmit resenting spatial isolation, I, b/w the
transmit source. 6) A tunable notch filter source will transmit signal at the low- GSM/W-CDMA antenna and the
that stops the fundamental. This filter est channel (W-CDMA B4: Chan GPS antenna.
will act as the selectivity of the GPS an- 1312 to 1712.4 MHz). Results:
tenna. It should be set to approximately 3. The fundamental in 2 gets attenu-
The results are shown in Figure
40 dB of rejection. 7) A combiner that ated by approximately 40 dB repre-
A2 for the case of 3G TX set to W-
combines the GPS (desired) signal and sented by the notch filter so it does not
CDMA band 4 (W-CDMA B4) with
3G (Jammer) signal and feeds them into overload the front-end of the receiver.
the following observations:
the input port SMA connector of the 4. The signals from 1 and 3 are com-
Plot colors:
GPS device. 8) RF cables and connectors. bined using a power combiner.
• The purple color is the theoretical
(ideal) sensitivity (one-to-one); no
losses whatsoever. This is without the
presence of NF due to line up inser-
tion loss (IL) or mismatch loss (ML).
• The blue color is sensitivity charac-
Connectors and Cables up to terization, no W-CDMA TX noise.
110 GHz
This is only due to hardware lineup.
• The orange color is sensitivity
characterization due to TX Band 4
noise and hardware lineup.
• The green color is with external
LNA place in the front-end lineup-
equation (6).
• The GPS receiver stopped tracking
satellites at input power levels of
-156 dBm and lower.
• Worst case in loss of sensitivity is
approximately 5.4 dB at -156 dBm
of input power, which agrees with
the sample calculations made. In
other words, due to the presence
of W-CDMA TX noise, the sensi-
tivity of the GPS receiver dropped
approximately 2.5 dB.
• One can use typical numbers of
their system lineup in the equa-
tions above that would correlate
with their measurements.
Taher AlSharabati is a faculty member at Al-
Ahlyah Amman University–Amman, Jordan, and a
PhD student at the University of South Carolina,
Columbia, SC. He obtained his BSEE degree at
St. Cloud State University, St. Cloud, MN, and his
MSEE degree at the University of Toledo, Toledo,
OH. He has many years of industry experience
with almost eight years at Motorola Inc.
Yinchao Chen currently is with the Department
of Electrical Engineering, University of South
Carolina as an Associate Professor. His current
research interests include signal integrity for high
speed circuits; computational electromagnetics;
RF, millimeter-wave and microwave integrated
circuits; wireless communication devices;
electronic packaging modeling for VLSI devices;
and antenna and scattering applications. Chen has
MMCX SMA N High Frequency published over 200 international publications. He
SMPM 1.0 mm
is a co-author of the book, Multiresolution Time
DC to 26 GHz 40 GHz to 110 GHz Domain Scheme for Electromagnetic Engineering,
a contributor of nine book chapters, and a co-
Non-Magnetic AVAILABLE! editor of two books.
ERA
PSA
Gali,
GVA, PHA LEE
AVA, PMA
Isolator/
Circulator with
Best-in-class
Intermodulation
Distortion
Performance
T
he increased use of multi-carrier radios wireless transmission system and are therefore
in cellular infrastructure systems is driv- critical to specify. Engineering teams from Sky-
ing the requirement for high linearity works Solutions and Trans-Tech (a subsidiary
components, especially in the power amplifier of Skyworks Solutions) have successfully devel-
chain. Isolators and circulators have histori- oped new materials/device designs for isolators
cally been known to impact the overall inter- and circulators that are optimized for IMD
modulation distortion (IMD) performance of a performance and offer the industry very low
IMD specifications. The new SKYFR-000700
circulator has IMD performance better than
−90 dBc with two +47 dBm tones.
FUNDAMENTALS
IMD is a nonlinear effect of two or more
OUTPUT POWER (dB)
ATTENTION
Fig. 2 SKYFR-000700 image.
PEAK PERFORMANCE
Microwave Sources
all Radio Link Manufacturers!
CONVERTER BASEBAND
MODEM of the SKYFR-000700 is the result
DATA
IN/OUT
of unique material selection and im-
POWER proved magnetic and electrical design
SUPPLY
in the circulator junction. This new
approach to non linearity allows the
circulator designer to achieve IMD
Slash time-to-market with Sivers IMA’s performance of more than 10 dB im-
performance enhancing E and V-band provement over existing products. It
converter platforms. Our flexible platform is expected that additional improve-
enables next-generation radio links to ments will be offered in the future by
further optimizing combinations of
provide transfer rates of up to 10 Gb/s - device and materials.
at radically reduced cost!
Skyworks,
SivERS iMA iS AN iSO 9001:2008 Cork, Ireland,
CERtiFiEd COMPANy www.skyworksinc.com.
www.siversima.com | info@siversima.com
TM
o S
COMPLIANT
High Performance
20 GHz
Microwave Signal
Generator
I
n order to provide customers with a light- kHz offset is measured, along with low spu-
weight, compact, low cost alternative to rious and good harmonic suppression. This
high-end laboratory-grade instruments, makes the signal generator attractive for all ap-
AnaPico has developed the APSIN signal gen- plications that require spectrally pure signals.
erator product line. The latest addition is the The APSIN20G’s analog modulation capa-
APSIN20G, which is a portable instrument that bilities cover AM, FM, ΦM and pulse modu-
completes the product family with an instru- lation. Multiple modulations can be combined
ment that extends the frequency coverage to 20 with up to three internal modulation sources
GHz. The APSIN20G is available with an op- available. External modulation signals are pro-
tional internal rechargeable battery that makes vided through the rear panel connectors that
it suitable for applications outside the lab, with- are shown in Figure 2. Wideband low-distor-
out any compromise in RF performance. tion DC-coupled FM, frequency chirps and
The microwave signal generator’s key per- user programmable pulse trains complete the
formance characteristics are summarized instrument’s key features.
in Table 1. With this instru- The APSIN20G uses a temperature com-
TABLE I ment, users are able to benefit pensated ultra-stable 100 MHz OCXO as in-
Key performance specifications from leading-edge phase noise, ternal reference. This is divided up to provide
for APSIN20G fine frequency resolution, wide a 10 MHz signal at the rear panel output. An
Parameter Value dynamic range, fast switching exclusive feature, the internal reference can be
Frequency Range 9 kHz to 20 GHz
speeds and good analog modu- programmed to phase lock to any external refer-
Resolution 0.001 Hz lation capabilities. Another key ence frequency from 1 to 250 MHz.
feature is ease of operation in a
Level –90 to +13 dBm
Resolution 0.05 dB variety of applications, especially FAST SWITCHING
Accuracy ±1.3 dB mobile or airborne applications, Today, most ATE applications require fast
Harmonics < –30 dBc
automated testing and manufac- switching of power and frequency to maximize
turing, military communications throughput in manufacturing and testing, and
SSB Phase Noise –110 dBc/Hz and radar, education and research
at 10 GHz (20 kHz special care has be taken to minimize transients
offset) labs and field testing. during switching from one frequency to anoth-
Switching speed < 200 microsec
er. With switching speeds of less than 200 µs, the
SIGNAL PURITY APSIN20G provides a suitable solution. Even
Modulation AM, DC/AC FM, The instrument produces a faster switching can be achieved with dedicat-
(internal/external) PM, Pulse, Freq. signal with excellent phase noise
Chips ed frequency and list sweeps.
and low spurious and harmonic List sweeps can be run with individual dwell
Control Front Panel, USB- content. The measured phase
TMC, LAN VXI-11,
optionally GPIB,
noise is shown in Figure 1. Sin-
SCPI 1999 gle-sideband phase noise of -110 AnaPico Ltd.
dBc/Hz at 10 GHz carrier and 20 Zurich, Switzerland
110 MICROWAVE JOURNAL n JULY 2011
Verifying EMC performance is one thing.
Diagnosing the cause of EMI is quite another.
When you find a device out of EMI Agilent N9038A MXE EMI Receiver
compliance, now you can also understand
CISPR 16-1-1 2010 compliant
why. Because the new Agilent receiver is
also an X-Series signal analyzer, loaded with Built-in X-Series analyzer runs applications
diagnostics to show what’s happening. Intuitive interface and graphical displays
CABLES
TM
8
minicircuits.com!
CK
$ 69 IN STO
from ea. (qty.1-9) DC to 18 GHz
Get the performance of semi-rigid cable, and the versatility Two popular diameters to fit your needs.
of a flexible assembly. Mini-Circuits Hand Flex cables offer the Hand Flex cables are available in 0.086" or 0.141" diameters,
mechanical and electrical stability of semi-rigid cables, but they’re with a turn radius of 6 or 8 mm, respectively. Straight SMA
easily shaped by hand to quickly form any configuration needed connectors are standard, and now we’ve added right-angle
for your assembly, system, or test rack. Wherever they’re used, the connectors to our Hand Flex lineup, for applications with
savings in time and materials really add up! tightly-packed components.
Excellent return loss, low insertion loss, DC-18 GHz. Across Standard lengths in stock, custom models available .
their entire bandwidth, Hand Flex cables deliver excellent Standard lengths from 3 to 24" are in stock for same-day shipping.
return loss ( >27 dB for up to 24" runs ) and low insertion You can even get a Designer’s Kit, so you always have a few on
loss ( 0.2 dB typ at 9 GHz for a 3-inch cable ). So why hand. Custom lengths, or two-right-angle models, are also available
waste time measuring and bending semi-rigid cables, by preorder. Check out our website for details, and simplify your
when you can easily install a Hand Flex interconnect? high-frequency connections with Hand Flex! RoHS compliant
o S
COMPLIANT
Spectro VNATM
Advances Vector
Network Analyzer
Capabilities
S
pectro VNATM vector network analyzer being visualized is not a signal, but a transfer
software brings the power of joint time- function of a device. Traditional VNA views of
frequency domain processing to vector S‑parameters in the frequency domain show
network analyzers (VNA). Many microwave magnitude versus frequency. Time domain
engineers are familiar with joint time-frequen- processing shows magnitude versus time. A
cy domain processing from spectrogram dis- joint time-frequency domain plot shows the
plays on vector signal analyzers. Spectrograms frequency dependent behavior of individual
display the magnitude of a signal as a function responses.
of both time and fre- Figure 2 shows a spectrogram for the S11
quency simultane- of a device. The horizontal scale is time; the
ously. Figure 1 shows vertical scale is frequency. The color represents
a spectrogram of an the magnitude of S11 at a particular moment in
802.11g waveform. time and at a particular frequency. The vertical
stripe at 2 nsec shows a variation in color from
Visualization of lower frequency to higher frequency, indicat-
S-Parameters ing that the reflection is greater at higher fre-
Introducing this quencies. This is one of the principal values of
technology to the joint time-frequency processing as applied to
VNA world enhances VNAs, namely, the ability to see the frequency
the visualization of response of a part of the device.
S-parameters and in-
creases the processing
s Fig. 1 Spectrogram of an 802.11g signal
capabilities of VNAs. Constant Wave
created with Spectro VSA™. For VNAs, the data Colorado Springs, CO
114 MICROWAVE JOURNAL n JULY 2011
Product Feature
data measured at the SMA input to
16.931
15.549 0 one pin of the device, and the de-
FREQUENCY (GHz)
14.167
3 embedded value of S11 for the chip.
12.784
11.402 6
The de-embedded trace (b) has the
10.020
8.638 9
ripple associated with the interaction
MAGNITUDE (dB)
7.256 of the device and the SMA launch re-
5.873 12
4.491
moved, as well as the line loss from
15
3.109
0 2.0 4.0 6.0 8.0 10.0
the transmission line. Extracting the
18 device response from a measurement
TIME (nsec)
21 of a PC board with a mounted device
s Fig. 2 Spectrogram of S11 produced with 24 is quick and easy using Time Domain
Spectro VNA™. 27 Substitution. For this example, the
30 measurements were all performed
0 3.7 7.4 11.1 14.8 18.5
with the device soldered to the board;
FREQUENCY (GHz) no socket was needed for additional
(a)
calibration standards.
0
Although the example shown
3
here is for one port de-embedding,
Time Domain Substitution can be
6
used to de-embed two port mea-
MAGNITUDE (dB)
9
surements. It can also be applied to
12 n-port devices. A particular advan-
15 tage for multi-port devices is that
18 Time Domain Substitution does not
21 require port-to-port standards to be
s Fig. 3 PC board with SMA launches,
able to de-embed multi-port mea-
lossy transmission lines and a device to be 24
measured. 27 surements.
30
0 3.7 7.4 11.1 14.8 18.5 Applications
S-Parameter Workspace (b)
FREQUENCY (GHz)
Spectro VNA is useful when de-
While the visualization of a S- bugging device or measurement is-
parameter in this way is valuable, a sues as it shows S-parameter values
spectrogram is not merely a static s Fig. 4 | S11| as measured (a), and de-em- simultaneously in time and frequency.
image. It is a workspace that can be bedded (b) using time domain substitution. The de-embedding method, called
used to explore the characteristics Time Domain Substitution, is helpful
of a device as both a function of fre- for removing the effects of PC boards
quency and time. The mathematics of De-embedding with Time Domain or other circuit elements that lie be-
joint time-frequency processing is not Substitution is accomplished by mak- tween the calibration reference plane
impaired by the problems associated ing two measurements of each port. of a VNA and the DUT.
with frequency gated by time math- One measurement is performed on
ematics typically found in VNA time the device and the second is per- Availability
domain processing. Individual points formed on a temporarily placed stan- Spectro VNA is available as
in the time-frequency space can be dard. Typically, it will be convenient a purchase or subscription on a
examined simply by clicking on the to create a temporary short circuit monthly basis. Using the subscrip-
spectrogram. Individual slices can be near the device, as high quality short tion model, users only pay for the
taken across the frequency domain circuits are relatively easy to create. software when they need it. They
or time domain. Specific responses Once the two measurements have can discontinue use for an arbitrary
can be mathematically isolated and been obtained, Spectro VNA pro- period of time and then resume
reconstructed using a tool that selects cesses the results to remove undesir- later when the need arises. Spectro
regions of the time-frequency space. able effects, such as connectors and VNA can retrieve data directly from
launches. many brands and models of VNAs.
Time Domain Substitution As an example, consider the PC The data can also be input from files
In addition to generating powerful board shown in Figure 3. When using the S1P, S2P, S3P and S4P
images, the mathematics of joint time- measuring the input match of a pin formats. It runs under Windows XP,
frequency domain processing enables of the device, the SMA launch cor- Vista, or 7. No additional hardware
simplified de-embedding. Time Do- rupts the measurement. Using Time or software is required.
main Substitution is a technique for Domain Substitution, the effects of
simplified de-embedding using a sin- the launch and the loss of the trans- Constant Wave,
gle standard. That standard can be a mission line between the launch and Colorado Springs, CO
short or an open, depending on which the device can be removed, leav-
(719) 331-2442,
standard is easiest to fabricate in the ing just the input match of the chip.
Figure 4 shows the measured S11 www.constantwave.com.
desired environment.
116 MICROWAVE JOURNAL n JULY 2011
EUROPE’S PREMIER MICROWAVE,
RF, WIRELESS AND RADAR EVENT
REGISTER NOW!
Supported by:
R
Official Publication:
Organised by:
To register and for full information on attending European Microwave Week visit
www.eumweek.com
Tech Brief
Time Domain Solver and
High Frequency Modeling
and Simulation
I
NTEGRATED Engineering Soft- ranging from low frequency to light • P lanar microwave and antenna
ware has released CHRONOS, its waves, from static to complete tran- structures.
new time domain solver and high fre- sient solutions. INTEGRATED’s • Wire antennas
quency tool for modeling and simulat- software programs can be seamlessly • UWB antennas
ing 3D RF and microwave applications. coupled to thermal analysis for an • Microwave circuits, waveguides and
Its easy-to-use interface enables design even-more thorough development. coaxial structures
engineers to model the geometry and In terms of variety of solvers, IN- The move from Frequency Do-
assigns its physical properties, providing TEGRATED now has added the Fi- main techniques into the Finite Dif-
fast and accurate results in both time nite Difference Time Domain meth- ference Time-Domain (FDTD), com-
domain and frequency domain. Time od; this is an addition to the Boundary bined with the parallelization of the
domain results can beMWJ_call_for_authors
transformed and new 4/27/06
Element 10:51
and Finite AM Page
Element 1
solvers program, brings significant time sav-
displayed with different parameters in currently available in the company’s ings.
the frequency domain using the power- software packages.
ful automatic post processing tools. CHRONOS is ideal for the analysis INTEGRATED Engineering Software,
By adding CHRONOS, INTE- and design of RF and antenna appli- Winnipeg, MB, Canada
GRATED now proudly offers a com- cations including: (204) 632-5636,
plete suite of electromagnetic tools, www.integratedsoft.com.
• Near-field and far-field applications
Mark Walsh
Editor
Artech House
685 Canton St.
Norwood, MA 02062
1-800-225-9977
mwalsh@artechhouse.com
www.artechhouse.com
Cavity Filters
Slab Line
Microstrip
Miss out on MTT?
Tour our booth at
minicircuits.com!
Ceramic Resonator
Lumped-Element
LTCC
Low Temperature
Cofired Ceramic
Over 300 Models IN STOCK ... Immediate Delivery! from ea.10-49 199
$
Different needs demand different technologies, and the In Yoni2, you can enter the response type, connection
Mini-Circuits RF/microwave filter lineup delivers. Over 300 option, frequency, insertion loss, or any other specifications
proven solutions, from DC to 15 GHz, are standing by, ready you have. If a model cannot be found, we understand the
to ship. High-pass or low-pass, band-pass or band-stop, sense of urgency. So contact us, and our engineers will find
in coaxial, surface-mount, or plug-in packages. Across the a quick, cost-effective, custom solution and deliver simulation
board, our filters achieve low insertion loss and low VSWR results within a few days.
in the passband and high attenuation in the rejection band.
Just go to minicircuits.com for more information. If you need ®
a specific performance and want to search our entire model U.S. patent 7739260
The Design Engineers Search Engine…
database, including engineering models, click on Yoni2, our finds the model you need, Instantly.
exclusive search engine.
Affordable,
High performance
Signal Generator
S
tanford Research has developed Low-jitter differential clock outputs tor that is phase-locked to a dithered
a DC to 4 GHz high perfor- (Opt. 01) are available, and an external direct digital synthesizer, is adjusted
mance, affordable RF source, I/Q modulation input (Opt. 03) is also so that the PLL generates the exact
the SG384 4 GHz RF signal generator. offered. For demanding applications, frequency. Doing so provides a high
The SG384 uses a unique, innovative the SG384 can be ordered with a ru- phase comparison frequency (typi-
architecture (Rational Approximation bidium timebase (Opt. 04). cally 25 MHz) yielding low phase
Frequency Synthesis) to deliver ultra- The SG384 is based on a new fre- noise while moving the PLL refer-
high frequency resolution (1 µHz), quency synthesis technique called ence spurs far from the carrier where
excellent phase noise (−116 dBc/Hz Rational Approximation Frequency they can be easily removed. The end
SSB phase noise at 20 kHz offset at 1 Synthesis (RAFS). RAFS uses small result is an agile RF source with low
GHz), versatile modulation capabilities integer divisors in a conventional phase noise, essentially infinite fre-
(AM, FM, ΦM, pulse modulation and phase-locked loop (PLL) to synthe- quency resolution, without the spurs
sweeps) at a fraction of the cost of com- size a frequency that would be close of fractional-N synthesis or the cost of
peting designs. The standard model to the desired frequency (typically a YIG oscillator.
SG384 produces sine waves from DC within 6100 ppm) using the nominal
Stanford Research Systems,
to 4.05 GHz. There is an optional fre- PLL reference frequency. The PLL
Sunnyvale, CA
quency doubler (Opt. 02) that extends reference frequency, which is sourced
(408) 744-9040,
the frequency range to 8.10 GHz. by a voltage-controlled crystal oscilla-
www.thinkSRS.com.
US: Call 1-800-225-9977 (in the U.S. or Canada), For complete descriptions and to order, visit
or 1-781-769-9750, ext. 4030
Fax to: 1-781-769-6334 ArtechHouse.com
E-mail to: artech@ArtechHouse.com All orders plus shipping/handling and applicable taxes.
UK: Call +44 (0)20 7596 8750 ARTECH HOUSE BOSTON LONDON
Fax to: +44 (0)20 7630-0166 685 Canton Street, Norwood, MA 02062 USA
E-mail to: artech-uk@ArtechHouse.com 16 Sussex Street, London SW1V 4RW UK
EXHIBITION &
CONFERENCE
REGISTRATION
INFORMATION
October 9th – 14th 2011
Manchester Central, Manchester, UK
Register Online at www.eumweek.com
Co-sponsored by:
Supported by: R
Organised by:
Official Publication:
THE EXHIBITION
Concentrating on the needs of engineers the event showcases the latest trends and developments that are widening the field of application of
microwaves. Pivotal to the week is the European Microwave Exhibition, which offers YOU the opportunity to see, first hand, the latest
technological developments from global leaders in microwave technology, complemented by demonstrations and industrial workshops.
Registration to the Exhibition is FREE!
• International Companies - meet the industry's biggest names and network on a global scale
• Cutting-edge Technology - exhibitors showcase the latest product innovations, offer hands-on demonstrations and provide the opportunity
to talk technical with the experts
• Technical Workshops - get first hand technical advice and guidance from some of the industry's leading innovators
• Three Conferences - European Microwave Integrated Circuits Conference (EuMIC), European Microwave Conference (EuMC),
European Radar Conference (EuRAD)
BE THERE
Exhibition Dates Opening Times
Tuesday 11th October 09.30 - 17.30
Wednesday 12th October 09.30 - 17.30
Thursday 13th October 09.30 - 16.30
VISITORS
Registering for the Exhibition
• Register as an Exhibition Visitor online at www.eumweek.com
• Receive a confirmation email with barcode
• Bring your barcode with you to the Exhibition
• Go to the Fast Track Check In Desk and print out your visitors badge
• Alternatively, you can register Onsite at the self service terminals during the Exhibition opening times.
Please note NO visitor badges will be mailed out prior to the Exhibition.
www.eumweek.com
eumw_ticket_2011_MWJ:eumw_ticket_2011 1/6/11 12:39 Page 3
Conference Prices
There are TWO different rates available for the EuMW conferences:
• ADVANCE DISCOUNTED RATE – for all registrations made online before 9th September
• STANDARD RATE – for all registrations made online after 9th September and onsite.
Please see the Conference Registration Rates table on the back page for complete pricing information.
All payments must be in £ sterling – cards will be debited in £ sterling.
Online registration is open now, up to and during the event until 14th October 2011.
DELEGATES
Registering for the Conference
• Register online at www.eumweek.com
• Receive a confirmation email receipt with barcode
• Bring your email, barcode and photo ID with you to the Event
• Go to the Fast Track Check In Desk and print out your delegates badge
• Alternatively, you can register Onsite at the self service terminals during the registration opening times
below:
- from 4pm on Saturday 8th October 2011 - Tuesday 11th October (07.30 – 17.00)
- Saturday 8th October (16.00 – 19.00) - Wednesday 12th October (07.30 – 17.00)
- Sunday 9th October (07.30 – 17.00) - Thursday 13th October (07.30 – 17.00)
- Monday 10th October (07.30 – 17.00) - Friday 14th October (07.30 – 10.00)
Once you have collected your badge, you can collect the conference proceedings on CD-ROM and delegate
bag for the conferences from the specified delegate bag area by scanning your badge.
eumw_ticket_2011_MWJ:eumw_ticket_2011 1/6/11 12:39 Page 4
Other Items
Proceedings on CD-ROM Partner Programme and Social Events
All papers published for presentation at each conference will be on a For information on and registration to any of these events, please visit
CD-ROM, given out FREE with the delegate bags to those attending www.hotelzon.com/en/uk/events-eumw-pp or email:
conferences. For additional CD-ROMS the cost is £42 sally.garland@hotelzon.co.uk.
FREE SPECIAL FORUMS & SESSIONS
DVD Archive EuMC EuMA Non EuMA
Date Time Title Location
Members Members
Weds 12th 09:00 - 19:00 The 2011 Defence & Security Forum Charter 1
DVD Archive EuMC 1969-2003 £8.00 £34.00
Thurs 13 & 08:30 - 17:00 Doctoral School of Microwaves Central
DVD Archive EuMC 2004-2008 £30.00 £106.00 Fri 14th Meeting Rm 8
EUROPE’S PREMIER
MICROWAVE, RF, WIRELESS
AND RADAR EVENT
European Microwave Week is the largest event dedicated to RF,
Microwave, Radar and Wireless Technologies in Europe.
Capitalising on the success of the previous shows, the event
promises growth in the number of visitors and delegates.
EuMW2011 will provide:
• 7,500 sqm of gross exhibition space
• 5,000 key visitors from around the globe
• 1,700 - 2,000 conference delegates
• In excess of 250 exhibitors
Running alongside the exhibition are 3 separate, but
complementary Conferences:
• European Microwave Integrated Circuits Conference (EuMIC)
• European Microwave Conference (EuMC)
• European Radar Conference (EuRAD)
Plus a one day Defence and Security Conference
Co-sponsored by:
European Microwave
Co-sponsored by:
Association
Co-sponsored by:
Supported by:
Supported by:
R
Organised by:
Official Publication:
AFTERNOON SESSIONS
Radar and EW - focusing on the challenges and solutions for modern systems.
NETWORK RECEPTION
A brief reception will take place following the afternoon sessions and preceding the
Executive Forum.
EXECUTIVE FORUM
Executives from government defence agencies and leading defence/security OEM contractors
will consider how their organizations view future threats to global safety, security and defence
and the role of technology in addressing these risks. A Q & A session will conclude the event.
Attendance is FREE
Register at www.eumweek.com
TRANSFORMERS
TC-G2+
TC+
NEW!
TCM+
Every transformer you need, right off the shelf ! Your choice of package styles includes:
Need an RF or microwave frequency transformer with a small TC-G2+ Ceramic with gold-plated terminals
footprint? Mini-Circuits has what you need, already in stock. for military and high-reliability requirements.
Our TC-series transformers cover a wide variety of frequency TCN+ and NCS+ Low Temperature Co-fired Ceramic (LTCC)
ranges, with rugged construction, outstanding VSWR miniature packaging for superior thermal stability and reliability.
performance and several packages to fit your size, reliability
TC+ and TCM+ All-welded construction and a plastic
and environmental requirements— and we can ship within a
base for commercial applications.
week of your order. Don’t see what you need? Our engineers
can customize a model to your needs at no extra charge. TC-TOP Features a “top-hat” package with
square top surface and model markings that can
RoHS compliant. improve your manufacturing throughput.
.12”x .06” .15”x .15”
IMAgine.
and a cost-effective design. This wideband am-
plifier is a very low-cost, high performance
500 MHz to 2 GHz device based upon a 50 Ω
push-pull design. Built within Mini-Circuits’
patented unibody construction, this amplifier
features exceptionally low second-order har-
Innovative | Multifunction | Adaptable
monic distortion and is unconditionally stable.
It is ideal for a wide range of wireless, small-
signal, and lab and test equipment designs. Integrated Microwave Assemblies
Mini-Circuits,
Brooklyn, NY (718) 934-4500,
www.minicircuits.com.
NIC introduces
a wideband
Smarter is better.
LNA operating
over the fre- Looking for better IMA performance?
quency range of
4.4 to 5 GHz,
designed for use
Incorporating a microcontroller turns an IMA into a smart IMA —
in C-band, radar which gives you a number of big benefits:
and Satcom applications. This LNA offers a
high gain of 30 dB, sub 1 dB noise figure, low cur- • Reduced setup and tune time
rent consumption and input power protection, • Greater precision
built in a small package size of 1.0" × 0.9" ×0.41". • Adaptive adjustments that
Custom designs are available up to Ku-band.
Networks International Corp.,
compensate for system
Overland Park, KS (913) 685-3400, dynamics and
www.nickc.com. environmental extremes
• Compensation for lot-to-lot
semiconductor variances
Material
Narda’s Ka Band 8W linear power output SSPA
Self-adhesive Foams is a excellent example. Its microcontroller No one goes to greater lengths
uses data from its temperature sensors, for smaller wavelengths.
Rogers has introduced two new self-adhesive power monitors and calibration look-up
tables to deliver greater linear power
narda
foams. PORON T h i n - S t i k ShockSeal
Foam: 7 9 T S 1 - 0 9 0 2 1 s u c c e s s f u l l y com- output with lower DC power consumption
bines the compressibility of the ThinStik family
of foams with the impact protection of the over a broader temperature range.
ShockSeal se-
ries. Additional- Smarter is better. To learn more
an
L3 communications company
M
D
Military Grade at Commercial Pricing S
Converters C
S
F
J
ames Rautio is well known as the computer has increased in speed by
Introduction founder of Sonnet and his collabo- about 300 million times as applied to
to RF Design ration with the Kogures goes back matrix inversion since then. With the
Using EM to 1985. At the time, he had writ- huge increases in speed, the industry
Simulators ten an antenna analysis program for has also seen huge increases in the
Hiroaki Kogure,
amateur radio operators that Aki and numbers of engineers who need to
Yoshie Kogure and Yoshie promoted and sold in Japan. solve microwave problems.
James Rautio They have been working together The Kogures have been addressing
ever since. As described in this book, this need for the last quarter-century
a typical moderately high-end desktop in Japan by giving innumerable cours-
es to help bring engineers new to our
field up to speed quickly. While these
students were eager and motivated,
and very skilled in other areas, their
knowledge of microwaves was often
nearly nonexistent. This book, along
with the companion antenna book, is
the culmination of all those years of
training Japan’s new-found micro-
The Complete wave engineers. It is intended for any-
one who finds themselves in the same
Antenna Design and situation as the Kogures’ Japanese
students – lots of motivation, but little
Placement Solution knowledge in this highly specialized
field. It is for those who will go on to
immerse themselves in equation-filled
college text books but would like a
quick, easy read to get the big picture,
to get a fundamental understanding
FEKO includes several of what is happening before dealing
computational methods, each with massive amounts of technical de-
optimised for different problem tail. It is also for those who deal with
types. microwave designers, who would like
to have a deeper understanding of ex-
The Method of Moments and the
actly what is going on, rather than just
Finite Element Method allow the
trying to memorize a few impressive-
analysis of a wide range of
sounding technical terms.
complex antennas. Hybridisation of these with asymptotic high
The Kogures performed the initial
frequency techniques allows the simulation of an antenna in their
translation of this book, and then Rau-
operating environment.
tio provided some polish to the prose
Additional Applications: Waveguide, RF components, Microstrip and added a few points. The original
Circuits, EMC, Cable Coupling, Radomes, RCS, Bio-EM. content of the book is due to work
performed by all three authors. The
Antenna Design: The combination of FEKO DVD included with this book includes
and Antenna Magus, with its huge a copy of Sonnet Lite and various files
database of antennas, provides a smooth
used for the examples in the book. It
design and analysis workflow.
is highly recommended for beginners
in this area of study.
Register to attend at
mwjournal.com/webinars
Frequency Matters.
ADVERTISER PAGE NO. ADVERTISER PAGE NO.
ADVERTISING INDEX Advanced Switch Technology
Agilent Technologies
133
35,77,111
Microwave Journal
Mini-Circuits
76,78,127,135
4-5,16,65,
American Technical Ceramics 36 66,79,95,
AML Communications, Inc. (see Microsemi below) 73 105,109,113,
Anadigics 56 119,121,129,137
Analog Devices 43 MITEQ Inc. 3,93,125
Anatech Electronics, Inc. 22 Modco, Inc. 133
Ansys, Inc. 25 Modpak, Inc. 133
AR RF/Microwave Instrumentation 29 Narda Microwave-East, an L3 Communications Co. 30,131
Artech House 118,120 Noisecom COV 2
AWR 11 NoiseWave Corp. 8
B&Z Technologies, LLC 31 Norden Millimeter Inc. 28
Carlisle Interconnect Technologies 13 OML Inc. 107
Cernex, Inc. 100 Paciwave, Inc. 68
Ciao Wireless, Inc. 58 Pascall Electronics Limited 64
Cobham Defense Electronic Systems 39 Pico Technology 74
Coilcraft 15 Programmed Test Sources, Inc. COV 3
COMSOL, Inc. 23 Pulsar Microwave Corporation 102
CPI Beverly Microwave Division 47 R&K Company Limited 132
CST of America, Inc. 21 Reactel, Incorporated 62
dBm, LLC 32 Remcom 103
Dielectric Laboratories Inc. 101 Res-Net Microwave Inc. 60
Eastern Wireless TeleComm, Inc. 37 RFHIC 92,94
EMC Technology Inc. 9 RFMD 45
Empower RF Systems, Inc. 97 Rogers Corporation 33
ES Microwave, LLC 56 Rosenberger 51
EuMW 2011 117,123 RT Logic 53
Fairview Microwave 99 Sector Microwave Industries, Inc. 133
Feko 134 Sivers IMA AB 108
Florida RF Labs Inc. 9 Skyworks Solutions, Inc. 41
Frontlynk Technologies Inc. 104 Sonnet Software, Inc. 19
G.T. Microwave Inc. 38 Special Hermetic Products, Inc. 133
Herotek, Inc. 18 Spectrum Elektrotechnik GmbH 91
Hittite Microwave Corporation 81,83,85,87 Stanford Research Systems 49
Huber + Suhner AG 75 Synergy Microwave Corporation 71,115
K&L Microwave, Inc. 7 T-Tech, Inc. 118
Laser Services 133 Taconic 44
Linear Technology Corporation 69 United Monolithic Semiconductors 89
Lorch Microwave 61 Universal Microwave Components Corporation 112
M/A-COM Technology Solutions 26,27 Waveline Inc. 46
Maury Microwave Corporation 54,90 Weinschel Associates 22
MECA Electronics, Inc. 6 Werlatone, Inc. COV 4
MiCIAN GmbH 86 Win Semiconductors Corp. 57
Micro-Coax Components 55 Wright Technologies 133
Microsemi (Formerly AML Communications, Inc.) 73 X-Com Systems 84
Microtool, Inc. 68
SALES REPRESENTATIVES
CARL SHEFFRES, PUBLISHER ED KIESSLING, TRAFFIC MANAGER
Eastern and Pacific and Germany, Austria, Korea China
Central Time Zones Mountain Time Zones and Switzerland Young-Seoh Chinn Michael Tsui
Chuck Boyd Wynn Cook (German-speaking) JES Media International ACT International
Northeast Reg. Sales Mgr. Western Reg. Sales Mgr. WMS.Werbe- und Media Service 2nd Floor, ANA Bldg. Tel: 86-755-25988571
(New England, New York, 208 Colibri Court Brigitte Beranek 257-1, Myungil-Dong Tel: 86-21-62511200
Eastern Canada) San Jose, CA 95119 Gerhart-Hauptmann-Street 33, Kangdong-Gu FAX: 86-10-58607751
685 Canton Street Tel: (408) 224-9060 D-72574 Bad Urach Seoul, 134-070 Korea michaelT@actintl.com.hk
Norwood, MA 02062 FAX: (408) 224-6106 Germany Tel: +82 2 481-3411
Tel: (781) 769-9750 wcook@mwjournal.com Tel: +49 7125 407 31 18 FAX: +82 2 481-3414 Hong Kong
FAX: (781) 769-5037 FAX: +49 7125 407 31 08 yschinn@horizonhouse.com Mark Mak
cboyd@mwjournal.com International Sales bberanek@horizonhouse.com ACT International
Richard Vaughan Japan Tel: 852-28386298
Michael Hallman International Sales Manager Israel Katsuhiro Ishii markm@actintl.com.hk
Eastern Reg. Sales Mgr. 16 Sussex Street Oreet Ben Yaacov Ace Media Service Inc.
(Mid-Atlantic, Southeast, Midwest) London SW1V 4RW, England Oreet International Media 12-6, 4-Chome,
4 Valley View Court Tel: +44 207 596 8742 15 Kineret Street Nishiiko, Adachi-Ku
Middletown, MD 21769 FAX: +44 207 596 8749 51201 Bene-Berak, Israel Tokyo 121-0824, Japan
Tel: (301) 371-8830 rvaughan@horizonhouse.co.uk Tel: +972 3 570 6527 Tel: +81 3 5691 3335
FAX: (301) 371-8832 FAX: +972 3 570 6526 FAX: +81 3 5691 3336
mhallman@mwjournal.com obenyaacov@horizonhouse.com amskatsu@dream.com
Directional/Bi-Directional
o S
COMPLIANT
69 IN ST
OCK $
From 1 ea. Qty.1000
Mini-Circuits LTCC coupler family offers versatile, low cost technology delivering both minimal insertion loss and high
solutions for your 5 kHz to 6 GHz needs with rugged directivity with models handling up to 65 W. All of our couplers
connectorized models from .74”x.50” to surface mount are ESD compliant and available as RoHS compliant. For full
couplers from .12”x.06”, the smallest in the world! Choose product details and specifications for all our couplers, go to
from our 50 & 75 Ω directional and bi-directional couplers with Mini-Circuits web site and select the best couplers for your
coupling ranging from 6-22 dB and with capability to pass commercial, industrial and military requirements.
DC. Mini-Circuits offers the world’s most highly evolved LTCC Mini-Circuits…we’re redefining what VALUE is all about!
Divisible from 1 to 9
Find a number consisting of 9 digits in which each of the digits from 1 to 9 appear only once. This number should
satisfy the following requirements:
a. The number should be divisible by 9
b. If the most-right digit is removed, the remaining number should be divisible by 8
c. If then again the most-right digit is removed, the remaining number should be divisible by 7
d. Etc., until the last remaining number of one digit which should be divisible by 1
www.programmedtest.com
1-978-486-3400
Wireless Semiconductor Selection Guide
RF Component Solutions
Avago Technologies RF component innovations have been instrumental in driving the
wireless revolution. Avago CoolPAMTM power amplifiers, Film Bulk Acoustic Resonator
(FBAR) filters, and Enhancement-mode pHEMT low noise amplifiers have set new
benchmarks for performance, size and battery life. Avago products combine innovative
technology, three decades of microwave and RF design experience, and expertise
in system, protocol and regulatory understanding to create solutions that can help
customers meet the most demanding technical specifications and the most difficult
regulatory tests around the world.
Avago Technologies’
tiny RFICs have Manufacturing Technologies Product Offerings
helped lead to
smaller wireless • Film Bulk Acoustic Resonator • Filters, Duplexers, and Multiplexers
products with • Gallium Arsenide Heterojunction • Power Amplifier Modules for many standards,
increased battery life. Bipolar Transistor including GSM, CDMA, W-CDMA, TD-SCDMA, LTE,
• Pseudomorphic High Electron and WiMAX
Mobility Transistor • Low Noise Amplifiers
• Enhancement Mode • Front End Modules including Power Amplifier –
Pseudomorphic High Electron Duplexers and Filter-LNAs
Mobility Transistor • RFICs
• Silicon • Schottky and PIN Diodes
• Field Effect and Bipolar Transistors
• Millimeter Wave MMICs
2
Film Bulk Acoustic Resonator (FBAR) Filters, Duplexers, Multiplexers Avago Technologies
created a new filter
and GPS Front-end Modules technology with FBAR
Today’s smartphones face many challenges, including support for difficult band plans and that helps designers
the need for coexistence between multiple radio systems. The exceptional performance solve tough filtering
of Avago FBAR filtering technology helps designers meet these challenges by providing problems.
low loss filtering with steep rejection characteristics. Microcap wafer-to-wafer bonding
technology enables flexible, miniature packaging, including true chip-scale WaferCap filters.
FBAR filters are also combined with EpHEMT LNAs to create a line of high performance 2002
modules that support demanding GPS applications. Filters
Features Benefits Duplexers
• Steep roll-off • Supports more efficient use of spectrum
2004
• Low insertion loss • Extends battery life
• High Isolation • Supports coexistence of simultaneously operating 2005
• Excellent power handling radio systems
• Low temperature coefficient • Improves phones sensitivity, enhancing data rate 2008
2011
and network performance
Multiplexers
• Can support multiple standards
FBAR Quadplexer
Part No. Standard Package Size
ACFM-7109 CDMA PCS & Cellular 3.0x5.0x1.05 mm
ACFM-7110 CDMA PCS & Cellular 3.0x5.0x1.05 mm
ACFM-7107 CDMA PCS & Cellular 4.0x7.0x1.2 mm
ACFM-7325 Extended PCS & Cellular (BC10/BC14) 4.0x7.0x1.2 mm
FBAR Filters
Part No. Standard Passband Package Size
ACPF-7005 CDMA PCS+BC14/B25 1850-1915 MHz 1.6 x 2.0 x 1.1mm
ACPF-7024 ISM/WLAN/BT 2401-2482 MHz 1.6 x 2.0 x 0.95 mm
ACPF-7025 WiMAX B41 2496-2690 MHz 2.5 x 2.5 x 1.0 mm
3
Power Amplifier Modules and PA-Duplexer Front End Modules
Battery life is one of the most important issues facing designers of next-generation mobile
handsets. Not only is it inconvenient to frequently recharge the battery, but lower power
consumption in the power amplifier frees more energy for other features like large displays.
Avago has developed a technology called CoolPAMTM that helps to optimize battery life by
only turning on as much of the power amplifier as is needed, thus greatly enhancing efficiency.
Avago has over 15 years of design and manufacturing expertise in power products, and offers
power amplifier modules for many different applications. Additionally, Avago has combined
its industry-leading FBAR and CoolPAM. technologies to offer a range of integrated modules
By combine multiple “best in class” technologies and optimizing partitioning and device
Avago Technologies interfaces, these devices can provide superior electrical performance, allowing designers get
CoolPAM and FEM their products to market faster, with less risk and higher yields.
technologies offer
superior performance.
Features Benefits
• High Efficiency • Extends battery life
• Integrated high directivity coupling • Excellent power control
• Support for multiple standards, including CDMA, • Supports complex 3G and 4G architectures
W-CDMA, GSM/EDGE, LTE, TD-SCDMA, and WiMAX • Can support multiple standards
• Support for most major bands in a common footprint
4
CDMA and TD-SCDMA Power Amplifiers
CDMA Cell CDMA PCS CDMA Japan TD-SCDMA Package Size
Single Band WS1105 WS1405 ACPM-5201 3 x 3mm PA
WS1106 ACPM-2001
ACPM-7822 ACPM-7887 4 x 4 mm PA
AFEM-7750 AFEM-7758 4 x 7mm FEM
AFEM-7751
Multi-Band ACPM-7353 ACPM-7353 4 x 5mm PA
ACPM-7351 ACPM-7351
ACPM-7354 ACPM-7354 3 x 5mm PA
5
System Block Diagrams and
Suggested Products
Wireless Infrastructure
• Basestation Radio Card . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
• Basestation Low Noise Amplifier (LNA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
• Basestation Tower Mounted Amplifier (TMA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
• Basestation Multi-carrier Power Amplifier (MCPA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
• Microwave Link (Point-Point/Point-Multipoint). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
• DBS Satellite TV System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
• Mobile DAB/SDARS/DMB Digital Receivers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
• GPS Receivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
• 2-6 GHz Systems (including 802.11a/b/g and 802.16a) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
VSAT
• C-band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
• Ku-band. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
RFID
• RFID 900 MHz Reader . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6
Wireless Infrastructure
Basestation Radiocard
LNA Mixer IF Amp IF Amp Atten. IF Amp
Rx diversity
Rx main
Buffer-HP Buffer-HP
Tx
Buffer-HP Buffer-HP
7
Wireless Infrastructure
Basestation Radiocard
Radiocard Suggested Components
Application Part Number Typ. Bias Frequency Gain/dB1 P1dB/dBm1 OIP3/dBm NF/dB2 Device Type and Package
V/mA Range/GHz @ 2GHz @ 2GHz @ 2GHz @ 2GHz (mm)
RF Amplifier MGA-301166 5/202.8 0.75 - 1 17 – 44.1 2 QFN 3x3
MGA-30216 5/206 1.7 - 2.7 14.2 – 45.3 2.8 QFN 3x3
MGA-303167 5/198 3.3 - 3.9 12.8 – 44.4 2.7 QFN 3x3
MGA-30489 5/97 0.25 - 3.0 13.3 23.3 39 3 SOT-89
MGA-30689 5/104 0.04 - 2.6 14.6 22.5 40 3.3 SOT-89
MGA-30789 5/100 2-6 11.7 – 41.8 3.3 SMT 4.5x4.1x1.5
MGA-30889 5/65 0.04 - 2.6 15.5 – 38 1.9 SMT 4.5x4.1x1.5
MGA-30989 5/51 2-6 12 – 36.8 2 SMT 4.5x4.1x1.5
MGA-31189 5/111 0.05 - 2 21 24 42 3 SOT-89
MGA-31289 5/124 1.5 - 3 18.7 24 41.8 3 SOT-89
MGA-31389 5/73 0.05 - 2 21.3 22.2 38.6 2 SOT-89
MGA-31489 5/69 1.5 - 3 19.5 21.9 37.3 1.9 SOT-89
MGA-31589 5/146 0.45 - 1.5 20.4 27.2 45.3 1.9 SOT-89
MGA-31689 5/168 1.5 - 3 18.1 27.6 44.9 1.9 SOT-89
MGA-53543 5/54 0.4 - 6 15.4 18.6 39.1 1.5 E-pHEMT MMIC, SOT343
MGA-53589 5/52 0.05 - 3.0 15.8 18.2 37 1.7 SOT-89
MGA-545P8 3.3/127 0.05 - 7 18.6 21.7 34 2.7 E-pHEMT MMIC, LPCC
MGA-61563 4 3/41 0.5 - 4 15.5 15.1 31.7 1 E-pHEMT MMIC, SOT363
ATF-52189 4.5/200 0.05 - 6 16 27 42 1.21 E-pHEMT FET, SOT89
ATF-521P8 4.5/200 0.05 - 6 17 26.5 42 0.96 E-pHEMT FET, LPCC
ATF-53189 4/135 0.05 - 6 15.5 23 40 0.62 E-pHEMT FET, SOT89
ATF-531P8 4/135 0.05 - 6 20 24.5 38 0.6 E-pHEMT FET, LPCC
ADA-4789 4.1/80 DC - 2.5 16.3 16.9 29 4.5 Si MMIC, SOT89
Variable Gain ALM-801109 5/110 0.4 - 1.6 (-27) to 13.6 23.3 40.3 4.8 MCOB 5.0x5.0x1.1
Amplifier ALM-80210 5/110 1.6 - 2.6 (-25.5) to 9.8 23.6 40.8 5.3 MCOB 5.0x5.0x1.1
RF Driver MGA-30489 5/97 0.25 - 3.0 13.3 23.3 39 3 SOT-89
MGA-30689 5/104 0.04 - 2.6 14.6 22.5 40 3.3 SOT-89
MGA-30789 5/100 2-6 11.7 – 41.8 3.3 SMT 4.5x4.1x1.5
MGA-30889 5/65 0.04 - 2.6 15.5 – 38 1.9 SMT 4.5x4.1x1.5
MGA-30989 5/51 2-6 12 – 36.8 2 SMT 4.5x4.1x1.5
MGA-31189 5/111 0.05 - 2 21 24 42 3 SOT-89
MGA-31289 5/124 1.5 - 3 18.7 24 41.8 3 SOT-89
MGA-31389 5/73 0.05 - 2 21.3 22.2 38.6 2 SOT-89
MGA-31489 5/69 1.5 - 3 19.5 21.9 37.3 1.9 SOT-89
MGA-31589 5/146 0.45 - 1.5 20.4 27.2 45.3 1.9 SOT-89
MGA-31689 5/168 1.5 - 3 18.1 27.6 44.9 1.9 SOT-89
MGA-53589 5/52 0.05 - 3.0 15.8 18.2 37 1.7 SOT-89
ATF-50189 4.5/280 0.05 - 6 15.5 29 45 1.1 E-pHEMT FET, SOT89
ATF-501P8 4.5/280 0.05 - 6 14.7 28 45 – E-pHEMT FET, LPCC
ATF-511P8 4.5/200 0.05 - 6 14.8 30 41.7 1.4 E-pHEMT FET, LPCC
ALM-311226 5/394 0.7 - 1 15.6 – 47.6 2 MCOB 5.0x6.0x1.1
ALM-31222 5/415 1.7 - 2.7 14.9 – 47.9 2.7 MCOB 5.0x6.0x1.1
ALM-313227 5/413 3.3 - 3.9 13.2 – 47.7 2.8 MCOB 5.0x6.0x1.1
ALM-321206 5/800 0.7 -1.0 14 – 52 2.5 MCOB 7.0x10.0x1.1
ALM-32220 5/800 1.7 - 2.7 14.8 – 50 3.5 MCOB 7.0x10.0x1.1
ALM-323207 5/800 3.3 - 3.9 12.5 – 50 2.5 MCOB 7.0x10.0x1.1
Recommended Parts in Bold.
Notes: 4. Current adjustable: 20-60mA. 7. MGA-30316, ALM-31322 and ALM-32320 data tested
1. Gain and P1dB performance for discrete FETs when matched 5. Both MGA-631P8 and MGA-632P8 come with integrated at 3.5GHz.
for best IP3. active bias circuit. MGA-631P8 data tested at 900MHz. 8. MGA-16516 data tested at 850MHz
2. NFmin figures for discrete FETs. 6. MGA-30116, ALM-31122 and ALM-32120 data tested 9. ALM-1522 and ALM-80110 data tested at 900MHz
3. High reverse isolation: 50dB typical. at 900MHz.
8
Wireless Infrastructure
Basestation Radiocard
Radiocard Suggested Components
Application Part Number Typ. Bias V/ Frequency Gain/dB1 P1dB/dBm1 OIP3/dBm NF/dB2 Device Type and Package
mA Range/GHz @2GHz @2GHz @2GHz @2GHz (mm)
Mixer IAM-92516 5/26 0.4 - 3.5 6 (CL) 9 27 (IIP3) 12.5 E-pHEMT MMIC, LPCC(3x3)
Buffer-High Power MGA-565P83 5/67 0.1 - 3.5 21.8 20 (Psat) – – E-pHEMT MMIC, LPCC
ABA-54563 5/79 DC - 3.4 23 16.1 27.3 4.4 Si MMIC, SOT363
Buffer-Low Power ABA-31563 3/14 DC - 3 21.5 2.2 13.1 3.8 Si MMIC, SOT363
ABA-32563 3/37 DC - 3 19 8.4 19.5 3.5 Si MMIC, SOT363
ABA-51563 5/18 DC - 3.5 21.5 1.8 11.4 3.7 Si MMIC, SOT363
ABA-52563 5/35 DC - 3.5 21.5 9.8 19.9 3.3 Si MMIC, SOT363
ABA-53563 5/46 DC - 3.5 21.5 12.7 22.9 3.5 Si MMIC, SOT363
AVT-50663 5/36 DC-6000 15.3 12.5 25 4 SOT-363 (SC70)
AVT-51663 5/37 DC-6000 19.6 12.9 25.1 3.2 SOT-363 (SC70)
AVT-52663 5/45 DC-6000 15.3 12.7 27 4 SOT-363 (SC70)
AVT-53663 5/48 DC-6000 19.6 15.1 26.5 3.2 SOT-363 (SC70)
AVT-54689 5/48 0.05 - 6 17.1 17.4 29.6 4.1 SOT-89
AVT-55689 5/75 0.05 - 6 17.2 19.5 32.5 4.3 SOT-89
Application Part Number Typ. Bias V/ Frequency Gain/dB1 P1dB/dBm1 OIP3/dBm NF/dB2 Device Type and Package
mA Range/GHz @500MHz @500MHz @500MHz @500MHz (mm)
IF Amplifier MGA-30489 5/97 0.25 - 3.0 18.8 22.7 37 3.3 SOT-89
MGA-30689 5/104 0.04 - 2.6 14.4 22.2 44 3.0 SOT-89
MGA-30789 5/100 2-6 11.7 – 41.8 3.3 SMT 4.5x4.1x1.5
MGA-30889 5/65 0.04 - 2.6 15.5 – 38 1.9 SMT 4.5x4.1x1.5
MGA-30989 5/51 2-6 12 – 36.8 2 SMT 4.5x4.1x1.5
MGA-31189 5/111 0.05 - 2 21 24 42 3 SOT-89
MGA-31289 5/124 1.5 - 3 18.7 24 41.8 3 SOT-89
MGA-31389 5/73 0.05 - 2 21.3 22.2 38.6 2 SOT-89
MGA-31489 5/69 1.5 - 3 19.5 21.9 37.3 1.9 SOT-89
MGA-31589 5/146 0.45 - 1.5 20.4 27.2 45.3 1.9 SOT-89
MGA-31689 5/168 1.5 - 3 18.1 27.6 44.9 1.9 SOT-89
MGA-625634 3/55 0.1 - 3 22 18 35 0.8 E-pHEMT MMIC, SOT363
MGA-545P8 3.3/135 0.1 - 7 22 19 36 2 E-pHEMT MMIC, LPCC
ADA-4789 4.1/80 DC - 2.5 17 18.8 35 4.2 Si MMIC, SOT89
ADA-4743 (3.8)/60 DC - 2.5 16.5 17.1 34 4.2 Si MMIC, SOT343
ADA-4643 (3.5)/35 DC - 2.5 17.3 14 29 4 Si MMIC, SOT343
ADA-4543 (3.4)/15 DC - 2.5 15.5 2.4 15 3.7 Si MMIC, SOT343
ABA-54563 5/81 DC - 3 23 18 32 3 Si MMIC, SOT363
ABA-53563 5/46 DC - 3.5 21.5 15 27.5 2.9 Si MMIC, SOT363
ABA-52563 5/35 DC - 3.5 21.8 12.5 28 2.7 Si MMIC, SOT363
Detector HSMS-282x Ct max = 1pF @0V SOT323/363/23/143
- Schottky Diodes HSMS-286x Ct max = 0.3pF @0V SOT323/363/23/143
Attenuator HSMP-381x Very low distortion, Ct typ. = 0.2pF @0V, see AN1048 & AN5262 pi-attenuator design SOT323/23/25/SOD-323
- PIN Diodes HSMP-386x Lower current, low cost, Ct typ. = 0.2pF @0V, see AN1048 pi-attenuator design SOT323/363/23/25/SOD-323
Attenuator - Module ALM-38140 Low distortion, high dynamic range attenuator module MCOB 3.8x3.8x1.0
Switch - Module ALM-40220 High Power 10W SPDT switch for TD-SCDMA MCOB 5.0x5.0x1.0
9
Wireless Infrastructure
Atten.
Q1 Q2 Q3 Q1 Q1
Bypass Switch
LNA & TMA Suggested Components
Application Part Number Typ. Bias V/ Frequency Gain/dB1 P1dB/dBm1 OIP3/dBm NF/dB2 Device Type and Package
mA Range/GHz @ 2GHz @ 2GHz @ 2GHz @ 2GHz (mm)
Q1 MGA-13116 5/55 0.4 - 1.5 38 23.3 41.4 0.51 QFN 4x4x0.85
MGA-13216 5/53 1.5 - 2.5 35.8 23.6 40.5 0.61 QFN 4x4x0.85
MGA-14516 5/45 1.4 - 2.7 31.7 – 23.5 0.66 QFN 4x4x0.85
MGA-165166 5/50 0.7 - 1.7 17.5 18.0 11.5 (IIP3) 0.45 QFN 4x4x0.85
MGA-17516 5/50 1.7 - 2.7 17.2 21.5 13.7 (IIP3) 0.52 QFN 4x4x0.85
MGA-631P8 3 4/60 0.4 - 1.5 17.5 18.0 33.1 0.53 E-pHEMT MMIC, LPCC 2x2
MGA-632P8 3 4/60 1.4 - 3 17.6 19.2 34.8 0.62 E-pHEMT MMIC, LPCC 2x2
MGA-633P8 5/54 0.45 - 2 18 – 37 0.37 QFN 2x2x0.75
MGA-634P8 5/48 1.5 - 2.3 17.4 22 36 0.37 QFN 2x2x0.75
MGA-635P8 5/56 2.3 - 4.0 18 21.9 35.9 0.56 QFN 2x2x0.75
ALM-11036 5/92 0.776 - 0.87 15.6 4 37.6 0.78 SMT 7x10
ALM-11136 5/92 0.87 - 0.915 15.4 4.5 38.2 0.76 SMT 7x10
ALM-11236 5/99 1.71 - 1.85 15.9 3.5 32.3 0.67 SMT 7x10
ALM-11336 5/100 1.85 - 1.98 15.3 3.8 35.5 0.72 SMT 7x10
ATF-58143 3/30 0.45 - 6 16.5 19 30.5 0.5 E-pHEMT FET, SOT343
ATF-54143 3/60 0.45 - 6 16.6 20 36.2 0.5 E-pHEMT FET, SOT343
ATF-55143 2.7/10 0.45 - 6 17.7 14 24.2 0.6 E-pHEMT FET, SOT343
ATF-53189 4/135 0.05 - 6 15.5 23 40 0.62 E-pHEMT FET, SOT89
ATF-531P8 4/135 0.05 - 6 20 24.5 38 0.6 E-pHEMT FET, LPCC
ALM-1222 5/280 1.8 - 2.2 31.0 27.5 43.7 0.62 MCOB 5.0x6.0x1.1
ALM-1322 5/100 1.8 - 2.2 29.9 17 35.6 0.57 MCOB 5.0x6.0x1.1
ALM-15227 5/240 0.7 - 1.1 31.0 27.7 43.0 0.60 MCOB 5.0x6.0x1.1
Q2/Q3 MGA-301164 5/202.8 0.75 - 1 17 - 44.1 2 QFN 3x3
MGA-30216 5/206 1.7 - 2.7 14.2 - 45.3 2.8 QFN 3x3
MGA-303165 5/198 3.3 - 3.9 12.8 - 44.4 2.7 QFN 3x3
MGA-53543 5/54 0.4 - 6 15.4 18.6 39.1 1.5 E-pHEMT MMIC, SOT343
MGA-53589 5/52 0.05 - 3.0 15.8 18.2 37 1.7 SOT-89
MGA-636P8 4.8/105 0.45 - 1.5 18.5 23 41.5 0.5 QFN 2x2x0.75
MGA-637P8 4.8/70 1.5 - 2.5 17.5 22 41.5 0.6 QFN 2x2x0.75
MGA-638P8 4.8/90 2.5 - 4 17.5 22 39.5 0.8 QFN 2x2x0.75
ATF-50189 4.5/280 0.05 - 6 15.5 29 45 1.1 E-pHEMT FET, SOT89
ATF-501P8 4.5/280 0.05 - 6 14.7 28 45 – E-pHEMT FET, LPCC
ATF-511P8 4.5/200 0.05 - 6 14.8 30 41.7 1.4 E-pHEMT FET, LPCC
ATF-52189 4.5/200 0.05 - 6 16 27 42 1.21 E-pHEMT FET, SOT89
ATF-521P8 4.5/200 0.05 - 6 17 26.5 42 0.96 E-pHEMT FET, LPCC
ATF-53189 4/135 0.05 - 6 15.5 23 40 0.62 E-pHEMT FET, SOT89
ATF-531P8 4/135 0.05 - 6 20 24.5 38 0.6 E-pHEMT FET, LPCC
Bypass Switch HSMP-389x General purpose switch, Ct typ. = 0.4pF @0V SOT-323/363/23/143/SOD-323
- PIN Diodes HSMP-489x Low inductance, shunt, Ct typ. = 0.4pF @0V SOT323/23
HSMP-386x Higher linearity switch, Ct typ = 0.2pF @0V SOT323/363/23/25/SOD-323
Attenuator HSMP-381x Very low distortion, Ct typ. = 0.2pF @0V, see AN1048 & AN5262 pi-attenuator design SOT323/23/25/SOD-323
- PIN Diodes HSMP-386x Lower current, low cost, Ct typ. = 0.2pF @0V, see AN1048 pi-attenuator design SOT323/363/23/25/SOD-323
Attenuator-Module ALM-38140 Low distortion, high dynamic range attenuator module MCOB 3.8x3.8x1.0
Recommended Parts in Bold. Notes:
1. Gain and P1dB performance for discrete FETs when matched for best IP3. 4. MGA-30116 data tested at 900MHz.
2. NFmin figures for discrete FETs. 5. MGA-30316 data tested at 3.5GHz.
3. Both MGA-631P8 and MGA-632P8 come with integrated active bias circuit. 6. MGA-16516 data tested at 850MHz
MGA-631P8 data tested at 900MHz. 7. ALM-1522 data tested at 900MHz
10
Wireless Infrastructure
control Det
&
VSWR
Pre-Driver
delay
Driver
delay
Pre-Driver
Driver
vector correction
Pre-distortion example
control Det
&
pre-distortion VSWR
Pre-Driver
Driver Driver
11
Wireless Infrastructure
IF/RF µW/mmW PA
IF Amp Mixer RF Amp RF Amp Mixer Driver Atten. Driver Detector
I
Q
RF Atten
Buffer-HP Buffer-HP
Detector X
Buffer Multiplier Buffer
Buffer-LP Buffer-LP VCO
Prescaler /n
Buffer-HP Buffer-HP
X
Buffer Multiplier Buffer
Buffer-LP VCO Buffer-LP
Prescaler /n
12
Wireless Infrastructure
Application Part Number Typ. Bias Frequency Gain (dB) P1dB (dBm) OIP3 (dBm) NF (dB) Device Type and Package
V/mA Range/GHz @ 2GHz @ 2GHz @ 2GHz @ 2GHz (mm)
RF Amplifier MGA-30489 5/97 0.25 - 3.0 13.3 23.3 39 3 SOT-89
MGA-30689 5/104 0.04 - 2.6 14.6 22.5 40 3.3 SOT-89
MGA-30789 5/100 2-6 11.7 – 41.8 3.3 SMT 4.5x4.1x1.5
MGA-30889 5/65 0.04 - 2.6 15.5 – 38 1.9 SMT 4.5x4.1x1.5
MGA-30989 5/51 2-6 12 – 36.8 2 SMT 4.5x4.1x1.5
MGA-31189 5/111 0.05 - 2 21 24 42 3 SOT-89
MGA-31289 5/124 1.5 - 3 18.7 24 41.8 3 SOT-89
MGA-31389 5/73 0.05 - 2 21.3 22.2 38.6 2 SOT-89
MGA-31489 5/69 1.5 - 3 19.5 21.9 37.3 1.9 SOT-89
MGA-31589 5/146 0.45 - 1.5 20.4 27.2 45.3 1.9 SOT-89
MGA-31689 5/168 1.5 - 3 18.1 27.6 44.9 1.9 SOT-89
MGA-53543 5/54 0.4 - 6 15.4 18.6 39.1 1.5 E-pHEMT MMIC, SOT343
MGA-53589 5/52 0.05 - 3.0 15.8 18.2 37 1.7 SOT-89
MGA-545P8 3.3/127 0.05 - 7 18.6 21.7 34 2.7 E-pHEMT MMIC, LPCC
MGA-615631 3/41.6 0.1 - 6 15.5 15.1 31.7 1 E-pHEMT MMIC, SOT363
ABA-53563 5/35 DC - 3.5 21.5 12.7 22.9 3.5 Si MMIC, SOT363
ABA-54563 5/81 DC - 3 22.5 16 26 4.2 Si MMIC, SOT363
ADA-4789 4.1/80 DC - 2.5 16.3 16.9 29 4.5 Si MMIC, SOT89
Mixer IAM-92516 5/26 0.4 - 3.5 6 (CL) 9 27 (IIP3) 12.5 E-pHEMT MMIC, LPCC(3x3)
Buffer-High Power MGA-565P82 5/67 0.1 - 3.5 21.8 20 (Psat) – – E-pHEMT MMIC, LPCC
ABA-54563 5/81 DC - 3 22.5 16 27.3 4.4 Si MMIC, SOT363
Buffer-Low Power ABA-31563 3/14 DC - 3 21.5 2.2 13.1 3.8 Si MMIC, SOT363
ABA-32563 3/37 DC - 3 19 8.4 19.5 3.5 Si MMIC, SOT363
ABA-51563 5/18 DC - 3.5 21.5 1.8 11.4 3.7 Si MMIC, SOT363
ABA-52563 5/35 DC - 3.5 21.5 9.8 19.9 3.3 Si MMIC, SOT363
ABA-53563 5/35 DC - 3.5 21.5 12.7 22.9 3.5 Si MMIC, SOT363
AVT-50663 5/36 DC-6000 15.3 12.5 25 4 SOT-363 (SC70)
AVT-51663 5/37 DC-6000 19.6 12.9 25.1 3.2 SOT-363 (SC70)
AVT-52663 5/45 DC-6000 15.3 12.7 27 4 SOT-363 (SC70)
AVT-53663 5/48 DC-6000 19.6 15.1 26.5 3.2 SOT-363 (SC70)
AVT-54689 5/48 0.05 - 6 17.1 17.4 29.6 4.1 SOT-89
AVT-55689 5/75 0.05 - 6 17.2 19.5 32.5 4.3 SOT-89
Recommended Parts in Bold. Notes:
1. Current Adjustable: 20-60mA.
2. High Reverse Isolation: 50dB typical.
13
Wireless Infrastructure
Application Part Number Typ. Bias V/mA Frequency Gain (dB) P1dB (dBm) OIP3 (dBm) NF (dB) Device Type and Package
Range/GHz @ 500MHz @ 500MHz @ 500MHz @ 500MHz
IF Amplifier MGA-625631 3/55 0.1 - 3 22 18 35 0.8 E-pHEMT MMIC, SOT363
MGA-545P8 3.3/135 0.1 - 7 22 19 36 2 E-pHEMT MMIC, LPCC
MGA-30489 5/97 0.25 - 3.0 18.8 22.7 37 3.3 SOT-89
MGA-30689 5/104 0.04 - 2.6 14.4 22.2 44 3.0 SOT-89
MGA-30889 5/65 0.04 - 2.6 15.5 – 38 1.9 SMT 4.5x4.1x1.5
MGA-31189 5/111 0.05 - 2 21 24 42 3 SOT-89
MGA-31389 5/73 0.05 - 2 21.3 22.2 38.6 2 SOT-89
ADA-4789 4.1/80 DC - 2.5 17 18.8 35 4.2 Si MMIC, SOT89
ADA-4743 (3.8)/60 DC - 2.5 16.5 17.1 34 4.2 Si MMIC, SOT343
ADA-4643 (3.5)/35 DC - 2.5 17.3 14 29 4 Si MMIC, SOT343
ADA-4543 (3.4)/15 DC - 2.5 15.5 2.4 15 3.7 Si MMIC, SOT343
ABA-54563 5/81 DC - 3 23 18 32 3 Si MMIC, SOT363
ABA-53563 5/46 DC - 3.5 21.5 15 27.5 2.9 Si MMIC, SOT363
ABA-52563 5/35 DC - 3.5 21.8 12.5 28 2.7 Si MMIC, SOT363
AVT-50663 5/36 DC-6000 15.3 12.5 25 4 SOT-363 (SC70)
AVT-51663 5/37 DC-6000 19.6 12.9 25.1 3.2 SOT-363 (SC70)
AVT-52663 5/45 DC-6000 15.3 12.7 27 4 SOT-363 (SC70)
AVT-53663 5/48 DC-6000 19.6 15.1 26.5 3.2 SOT-363 (SC70)
AVT-54689 5/48 0.05 - 6 17.1 17.4 29.6 4.1 SOT-89
AVT-55689 5/75 0.05 - 6 17.2 19.5 32.5 4.3 SOT-89
14
Wireless Infrastructure
9.75 GHz
out1
out2
10.6 GHz
15
Wireless Infrastructure
LNA Q3
LO Buffer
DAB: 1452 - 1492 MHz
SDARS: 2320 - 2345 MHz
DMB: 2.6 GHz VCO
Application Part number Typ. Bias V/ Frequency Gain/dB P1dB/dBm OIP3/dBm NF/dB Device Type and Package
mA Range/GHz @ 2GHz @ 2GHz @ 2GHz @ 2GHz
LO Buffer ABA-31563 3/14.5 DC - 3 21 2 13 3.8 Si MMIC, SOT363
ABA-32563 3/38 DC - 2.5 18.5 8 19 3.4 Si MMIC, SOT363
Recommended Parts in Bold.
16
Wireless Infrastructure
GPS Receivers
LNA Q1 LNA Q2
(Optional)
Baseband
Chipset
Pre-Filter Post-Filter
Application Part Number Typ. Bias V/ NF/dB Gain/dB IIP3/dBm Cell-Band PCS-Band Device Type and Package
mA Rejection/dBc Rejection/dBc (mm)
LNA Q1 with ALM-1412 2.85/8 0.82 13.5 7 54 63 MCOB 3.3x2.1x1.1
Integrated Post
ALM-1612 2.7/6 0.95 18.2 2 69 67 MCOB 3.3x2.1x1.0
Filter
ALM-2412 2.85/9 0.85 13.5 6.1 63 65 MCOB 3.3x2.1x1.1
ALM-2712 2.7/7.5 12.6 14.2 2 – – MCOB 3x2.5x1
LNA Q1 with ALM-1712 2.7/8 1.65 12.8 3 104 92.6 E-pHEMT & FBAR, MCOB
Integrated Pre and 4.5x2.2x1.0
Post Filters
ALM-1812 2.8/6 1.9 18.5 2 95 90 E-pHEMT & FBAR, MCOB
4.5x2.2x1.0
ALM-1912 2.7/6 1.62 19.3 1.5 >57 >53 MCOB 2.9x2x1
17
Wireless Infrastructure
Tx IF
Switch or Duplexer
Buffer Buffer VCO Detector
IF frequency typically:
<500 MHz for DC-2 GHZ
<2 GHz for 2-6 GHz
IF Amp Mixer LNA
Rx IF
Buffer Buffer VCO
18
Wireless Infrastructure
Application Part Number High Isolation, High Linearity switch with Detector Package
Switch Deªtector Module AFEM-S260 2-4 MCOB 3x4x1
Notes:
1. Gain and P1dB performance for discrete FETs when matched for best IP3. 3. Current adjustable 10 - 60mA.
2. Current adjustable: 10 - 80mA. 4. High reverse isolation: 50dB typical.
Application Part Number Test Bias Test Freq Gain1 P1dB1 OIP3 NF Package (mm)
Low Noise Amplifiers MGA-14516 5.0/45 1.95 31.7 23.5 38 0.68 QFN 4x4x0.85
MGA-21108 1.4/17 3.5 17.6 5.3 20.9 1.4 STSLP 2.5x2.5x0.55
MGA-615632 3/41 2 15.5 15.1 31.7 1 E-pHEMT MMIC, SOT363
MGA-632P8 4/60 1.95 17.6 18.3 35.4 0.6 LPCC 2x2
MGA-645T6 3/7 2.4 15 9.0 22 1.1 E-pHEMT, UTSLP 2x1.3x0.4
MGA-655T6 3/10 3.5 14.7 12.0 20.2 1.17 E-pHEMT, UTSLP 2x1.3x0.4
MGA-665P8 3/20.5 5.25 16 11.4 18.2 1.45 E-pHEMT MMIC, LPCC
MGA-675T6 3.0/10 5.5 17.8 (-10) IP1dB (-3) IIP3 1.75 E-pHEMT, UTSLP 2x1.3x0.4
MGA-64606 3/7 2.4 15.3 -3.0 (IP1dB) 20.3 0.95 UTSLP 2.0x1.3
MGA-65606 3/7 3.5 15.3 -2.4 (IP1dB) 21 1.05 UTSLP 2.0x1.3
MGA-715433 2.4/10 2.01 15.9 7.4 18.9 1.1 pHEMT MMIC, SOT343
MGA-85563 3/15 2 19 0.9 11.5 1.85 pHEMT MMIC, SOT363
MGA-87563 3/4.5 2 14 -2 8 1.8 pHEMT MMIC, SOT363
ATF-36077 1.5/10 12 12 5 0.5 pHEMT FET, ceramic
ATF-36163 1.5 12 10 5 1.2 pHEMT FET, SOT363
ATF-551M4 2.7/10 2 17.5 14.6 24.1 0.5 E-pHEMT FET, MiniPak
ATF-55143 2.7/10 2 17.7 14.4 24.2 0.6 E-pHEMT FET, SOT343
ALM-2812 3.3/15 2.45 16.7 (-5.8) IP1dB 6.1 IIP3 0.8 MCOB 3x3x1.1
3.3/23.4 5.5 23.2 (-12.8) IP1dB (-2.1) IIP3 1.4 MCOB 3x3x1.1
VMMK-1218 3/20 10 10.7 12 12 0.7 SM 1x0.5
VMMK-1225 2/20 12 11 8 23 0.9 SM 1x0.5
Mixers IAM-91563 3/9 1.89 9 -8 -6 8.5 pHEMT MMIC, SOT363
Notes
1. Gain and P1dB performance for discrete FETs when matched for best IP3
2. Current adjustable 10 - 60mA
3. Source grounded configuration
19
Wireless Infrastructure
Application Part Number Typ. Bias V/ Frequency Gain/dB P1dB/dBm OIP3/dBm NF/dB Device Type and Package
mA Range/GHz @ 2GHz @ 2GHz @ 2GHz @ 2GHz
IF Amplifier MGA-625631 3/55 0.1 - 3 22 18 35 0.8 E-pHEMT MMIC, SOT363
MGA-545P8 3.3/135 0.1 - 7 22 19 36 2 E-pHEMT MMIC, LPCC
ADA-4789 4.1/80 DC - 2.5 16.3 16.9 29 4.5 Si MMIC, SOT89
ADA-4743 (3.8)/60 DC - 2.5 16.5 17.1 34 4.2 Si MMIC, SOT343
ADA-4643 (3.5)/35 DC - 2.5 17.3 14 29 4 Si MMIC, SOT343
ADA-4543 (3.4)/15 DC - 2.5 15.5 2.4 15 3.7 Si MMIC, SOT343
ABA-54563 5/81 DC - 3 23 18 32 3 Si MMIC, SOT363
ABA-53563 5/46 DC - 3.5 21.5 15 27.5 2.9 Si MMIC, SOT363
ABA-52563 5/35 DC - 3.5 21.8 12.5 28 2.7 Si MMIC, SOT363
AVT-50663 5/36 DC-6000 15.3 12.5 25 4 SOT-363 (SC70)
AVT-51663 5/37 DC-6000 19.6 12.9 25.1 3.2 SOT-363 (SC70)
AVT-52663 5/45 DC-6000 15.3 12.7 27 4 SOT-363 (SC70)
AVT-53663 5/48 DC-6000 19.6 15.1 26.5 3.2 SOT-363 (SC70)
20
VSAT
C-Band
Det L-band Det C-band
SSPA
70/140 MHz
VCO PLL
L-band
C-band LNA
IF Amp RF Atten C-band LNA
70/140 MHz
Application Part number Typ. Bias V/ Frequency Gain/dB P1dB/dBm OIP3/dBm NF/dB Device Type and Package
mA Range/GHz @ 2GHz @ 2GHz @ 2GHz @ 2GHz
L-band Amplifier MGA-53543 5/54 0.4 - 6 15.4 18.6 39.1 1.5 E-pHEMT MMIC, SOT343
L-band Buffer - Low MGA-615631 3/41.6 0.1 - 6 15.5 15.1 31.7 1 E-pHEMT MMIC, SOT363
Power MGA-82563 3/84 0.1 - 6 13.2 17.3 31 2.2 GaAs MMIC, SOT363
MGA-81563 3/42 0.1 - 6 12.4 14.8 27 2.8 GaAs MMIC, SOT363
ABA-53563 5/46 DC - 3.5 21.5 12.7 22.9 3.5 Si MMIC, SOT363
ABA-52563 5/35 DC - 3.5 21.5 9.8 19.9 3.3 Si MMIC, SOT363
ABA-51563 5/18 DC - 3.5 21.5 1.8 11.4 3.7 Si MMIC, SOT363
MGA-855633 3/15 to 30 0.8 - 6 19 1 to 8 12 to 17 1.9 GaAs MMIC, SOT363
L-band Buffer-High MGA-565P82 5/67 0.1 - 3.5 21.8 20 (Psat) – – E-pHEMT MMIC, LPCC
Power MGA-82563 3/84 0.1 - 6 13.2 17.3 31 2.2 GaAs MMIC, SOT363
Recommended Parts in Bold.
Notes:
1. Current adjustable 10-60mA.
2. High reverse isolation: 50dB typical.
3. Reverse Isolation 40dB typical.
21
VSAT
C-Band
VSAT Suggested Components
Application Part Number Description Package
L-band/C-band Detector HSMS-282x Ct max = 1pF @0V SOT323/363/23/143
- Schottky Diodes
HSMS-286x Ct max = 0.3pF @0V SOT323/363/23/143
RF Attenuator HSMP-381x Very low distortion, Ct typ. = 0.2pF @0V, see AN1048 pi-attenuator design SOT323/23/25/SOD-323
- PIN Diodes
HSMP-386x Lower current, low cost, Ct typ. = 0.2pF @0V, see AN1048 pi-attenuator design SOT323/363/23/25/SOD-323
RF Attenuator - Module ALM-38140 Low distortion, high dynamic range attenuator module MCOB 3.8x3.8x1.0mm
Application Part number Typ. Bias V/ Frequency Gain/dB1 P1dB/dBm1 OIP3/dBm NF/dB2 Device Type and Package
mA Range/GHz @ 5GHz @ 5GHz @ 5GHz @ 5GHz
C-band LNA ATF-36077 1.5/10 2 - 18 16 5 – 0.3 PHEMT FET, ceramic
ATF-36163 1.5/10 1.5 - 18 15 5 – 0.61 PHEMT FET, SOT363
ATF-551M4 2.7/10 0.5 - 6 12 14.5 24.5 0.75 E-pHEMT FET, MiniPak
ATF-55143 2.7/10 0.5 - 6 12 13.5 24 0.9 E-pHEMT FET, SOT343
C-band Amplifier MGA-545P8 3.3/135 0.1 - 6 12 21 34 3.6 E-pHEMT MMIC, LPCC
C-band Buffer
MGA-82563 3/84 0.1 - 6 9.5 17 31 2.6 GaAs MMIC, SOT363
MGA-81563 3/42 0.1 - 6 10.5 14.5 27 3.2 GaAs MMIC, SOT363
MGA-85563 3/15 to 30 0.8 - 6 16 1 to 8 12 to 18 1.6 GaAs MMIC, SOT363
ATF-541M4 3/60 0.5 - 8 11 19.5 37.5 1.02 E-pHEMT FET, MiniPak
ATF-54143 3/60 0.5 - 6 11 18 36 0.93 E-pHEMT FET, SOT343
ATF-521P8 4.5/200 0.5 - 6 10 27 39 1.75 E-pHEMT FET, LPCC
22
VSAT
Ku-Band
SSPA
70/140 MHz
L-band Amp L-band Amp Mixer L-band L-band Amp Ku-band LNA
Amp
/n
Prescaler Ku-band Buffers
Tx/GHz: 13.75-14.00, 14.00-14.50
Rx/GHz: 10.95-11.70, 11.20-11.70, 11.70-12.20, 12.25-12.75
PLL Ku-band LNB
23
VSAT
Ku-Band
VSAT Suggested Components
Application Part Number Description Package
Ku-band Detector HSMS-286x Ct max = 0.3pF @0V SOT323/363/23/143
- Schottky diodes
HSCH-5310/5330 Si single, Ct=0.1pF, med. barrier/low barrier beamlead
HSCH-5312/5332 Si single Ct=0.15pF, med. barrier/low barrier beamlead
Ku-band Mixer HSMS-8202 Si series pair, Ct=0.26pF, low-cost SOT23
- Schottky diodes
HSCH-5312/5332 Si single Ct=0.15pF, med. barrier/low barrier beamlead
HSCH-5531 Si series pair, Ct=0.15pF, low barrier/ Ct=0.1pF, med. barrier beamlead
24
RFID
RFID
Tag
EPC encoded
Buffer VCO
Buffer
Demodulator LNA
25
Product Selection Guides
RFICs (GaAs and Silicon)
GaAs RFICs
Component Part Number Freq. Range Test Freq. Vdd Idq NF Gain P1dB OIP3 Package
(GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm)
GaAs Fixed Gain Amplifiers MGA-52543 0.4 - 6 1.9 5 53 1.9 14.2 +17.4 +32 SOT-343 (SC-70)
MGA-53543 0.4 - 6 1.9 5 54 1.5 15.4 +18.6 +39 SOT-343 (SC-70)
MGA-53589 0.05 - 6 1.9 5 52 1.66 15.8 +18.5 +37 SOT-89
MGA-81563 0.1 - 6 2.0 3 42 2.8 12.4 +14.8 +27 SOT-363 (SC-70)
MGA-82563 0.1 - 6 2.0 3 84 2.2 13.2 +17.3 +31 SOT-363 (SC-70)
MGA-85563 0.8 - 6 2.0 3 15 to 30 1.9 18.0 +1 to +8 +12 to +17 SOT-363 (SC-70)
MGA-86563 0.5 - 6 2.0 5 14 1.5 22.7 +4.1 +15 SOT-363 (SC-70)
MGA-86576 1.5 - 8 4.0 5 16 1.6 23.1 +6.3 +16 SM Ceramic
MGA-87563 0.5 - 4 2.0 3 4.5 1.6 14.0 -2 +8 SOT-363 (SC-70)
Component Part Number Freq. Range Test Freq. Vdd Idsat PAE Gain PSAT OIP3 Package
(GHz) (GHz) (V) (mA) (%) (dB) (dBm) (dBm) (mm)
GaAs Medium Power MGA-30789 2-6 3.5 5 100 11.7 – 41.8 SMT 4.5x4.1x1.5
Amplifiers MGA-30889 0.04 - 2.6 0.9 5 65 15.5 – 38 SMT 4.5x4.1x1.5
MGA-30989 2-6 3.5 5 51 12 – 36.8 SMT 4.5x4.1x1.5
MGA-412P8 2.4 - 2.5 2.4 3.3 95 NA 25.5 +25.3 38 LPCC 2X2
MGA-425P8 2 - 10 5.25 3.3 65 47.0 16.0 +20.3 32.9 LPCC 2x2
MGA-545P8 0.05 - 7 5.825 3.3 92 46.0 11.5 +22 +34 LPCC 2x2
MGA-83563 0.5 - 6 2.4 3 152 37.0 22.0 +22 +29 SOT-363 (SC-70)
Component Part Number Freq. Range Test Freq. Vdd Idq NF Gain OP1dB OIP3 Package
(GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm) (mm)
GaAs Match-Pair Dual LNA MGA-16516 0.7 - 1.7 0.85 5 50 0.45 17.5 18 11.5 (IIP3) QFN 4x4x0.85
MGA-17516 1.7 - 2.7 1.95 5 50 0.52 17.2 21.5 13.7 (IIP3) QFN 4x4x0.85
Component Part Number Freq. Range Test Freq. Vdd Idq NF Gain P1dB OIP3 Package
(GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm) (mm)
GaAs Smart Bias Amplifier MGA-14516 1.4 - 2.7 1.95 5 45 0.66 31.7 23.5 38 QFN 4x4x0.85
MGA-61563 0.1 - 6 2 3 41 1.2 16.6 +15.8 +28.5 SOT-363 (SC-70)
MGA-62563 0.1 - 3 0.5 3 60 0.9 22.0 +17.8 +32.9 SOT-363 (SC-70)
MGA-631P8 0.4 - 1.5 0.9 4 60 0.5 17.5 18 32.8 LPCC2x2
MGA-632P8 1.4 - 3 1.95 4 60 0.6 17.6 18.3 35.4 LPCC2x2
MGA-685T6 0.1 - 1.5 0.5 3 10 0.9 18.9 17.3 +18.7 UTSLP 2.0x1.3x0.4
MGA-68563 0.1 - 1.5 0.5 3 11 1 19.7 17.5 20.7 SOT-363
Component Part Number Freq. Range Test Freq. Vdd Idq NF Gain PAE OIP3 Package
(GHz) (GHz) (V) (mA) (dB) (dB) (%) (dBm) (mm)
GaAs High Linearity ALM-31122 0.7 - 1 0.9 5 394 2 15.6 52.5 47.6 MCOB 5.0x6.0x1.1
Amplifier ALM-31222 1.7 - 2.7 2 5 415 2.7 14.9 52.6 47.9 MCOB 5.0x6.0x1.1
ALM-31322 3.3 - 3.9 3.5 5 413 2.8 13.2 51.5 47.7 MCOB 5.0x6.0x1.1
ALM-32120 0.7 - 1.0 0.9 5 800 2.5 14 47 52 MCOB 7.0x10.0x1.1
ALM-32220 1.7 - 2.7 2 5 800 3.5 14.8 47.5 50 MCOB 7.0x10.0x1.1
ALM-32320 3.3 - 3.9 3.5 5 800 2.5 12 43 49 MCOB 7.0x10.0x1.1
MGA-30116 0.75 - 1 0.9 5 202.8 2 17 47 44.1 QFN 3x3
MGA-30216 1.7 - 2.7 2 5 206 2.8 14.2 48.9 45.3 QFN 3x3
MGA-30316 3.3 - 3.9 3.5 5 198 2.7 12.8 51.3 44.4 QFN 3x3
MGA-30489 0.25 - 3.0 1.9 5 97 3 13.3 – 39 SOT-89
MGA-30689 0.04 - 2.6 1.95 5 104 3.3 14.6 – 40 SOT-89
MGA-31189 0.05 - 2 0.9 5 111 3 21 42.5 42 SOT-89
MGA-31289 1.5 - 3 1.9 5 124 2 18.7 36.4 41.8 SOT-89
MGA-31389 0.05 - 2 0.9 5 73 2 21.3 41.2 38.6 SOT-89
MGA-31489 1.5 - 3 1.9 5 69 1.9 19.5 39.1 37.3 SOT-89
MGA-31589 0.45 - 1.5 0.9 5 146 1.9 20.4 45 45.3 SOT-89
MGA-31689 1.5 - 3 1.9 5 168 1.9 18.1 48 44.9 SOT-89
MGA-53589 50MHz - 6GHz 1.9 5 54 1.66 18.6 – 37 SOT-89
26
RFICs (GaAs and Silicon)
GaAs RFICs
Component Part Number Freq. Range Test Freq. Vdd Idsat Isolation Gain Psat Package
(GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (mm)
GaAs LO Buffer Amplifier MGA-565P8 0.1 - 3 2 5 67 50.0 21.8 +20 LPCC2x2
Component Part Number Freq. Test Freq. Vd/Id Switch Inser- NF Gain P1dB IIP3 Package
Range (GHz) (V/mA) tion Loss (dB) (dB) (dB) (dBm @ mA) (dBm @mA) (mm)
(GHz)
GaAs Amplifier with MGA-645T6 1.7 - 3 2.4 3/7 4.5 1.1 15.0 +9 @ 7 +7 @ 7 UTSLP 2.0x1.3x0.4
Bypass Switch MGA-64606 1.5 -3 2.4 3/7 4.5 0.95 15.3 -3.0(IP1dB) +5@7 UTSLP 2.0x1.3
MGA-655T6 2.5 - 4 3.5 3/10 4.2 1.17 14.7 +12 @ 10 +5.5 @ 10 UTSLP 2.0x1.3x0.4
MGA-65606 2.5 - 4 3.5 3/7 4.2 1.05 15.3 -2.4(IP1dB) +5.7@7 UTSLP 2.0x1.3
MGA-71543 0.1 - 6 2 2.7/10 5.6 0.8 15.4 +7.4 @ 10 +3 @ 10 SOT-343 (SC-70)
MGA-72543 0.1 - 6 2 2.7/20 2.5 1.4 13.6 +11.2 @ 20 +10.5 @ 20 SOT-343 (SC-70)
MGA-725M4 0.1 - 6 2 2.7/20 1.6 1.3 15.7 +13.1 @ 20 +9.9 @ 20 MiniPak Package
MGA-785T6 0.1 - 1.5 0.6 3/10 2.6 1.5 15.7 3.2 @ 10 +1.10 @ 10 UTSLP 2.0x1.3x0.4
Component Part Number Freq. Range Test Freq. Vd Id NF Gain P1dB OIP3 Package
(GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm) (mm)
GaAs LNA with Power MGA-665P8 0.5 - 6 5.25 3 21 1.5 16.5 11.1 15.4 LPCC2x2
Down
GaAs LNA Module MGA-13116 0.4 - 1.5 0.9 5 55 0.51 38 23.3 41.4 QFN 4x4x0.85
MGA-13216 1.5 - 2.5 1.95 5 53 0.61 35.8 23.6 40.5 QFN 4x4x0.85
MGA-21108 1.5 - 8.0 3.5 1.4 17 1.4 17.6 5.3 20.9 STSLP 2.5x2.5x0.55
MGA-231T6 0.9 - 3.5 1.575 2.7 6 0.9 18.5 (-8) IP1dB 2 (IIP3) E-pHEMT, UTSLP
2x1.3x.04
MGA-24106 0.9 - 3.5 1.575 2.7 3.3 0.97 17.9 -9.7 (IP1dB) -2.0 (IIP3) uDFN 1.5x1.3x0.5
MGA-633P8 0.45 - 2 0.9 5 54 0.37 18 22 37 QFN 2x2x0.75
MGA-634P8 1.5 - 2.3 1.9 5 48 0.44 17.4 36 QFN 2x2x0.75
MGA-635P8 2.3 - 4 2.5 5 56 0.56 18 21.9 35.9 QFN 2x2x0.75
MGA-636P8 0.45 - 1.5 0.7 4.8 105 0.5 18.5 23 41.5 QFN 2x2x0.75
MGA-637P8 1.5 - 2.5 1.7 4.8 70 0.6 17.5 22 41.5 QFN 2x2x0.75
MGA-638P8 2.5 - 4 2.5 4.8 90 0.8 17.5 22 39.5 QFN 2x2x0.75
MGA-635T6 0.9 - 2.4 1.575 2.85 4.9 0.86 14.6 1 (IP1dB) 3.5 (IIP3) UTSLP 2.0x1.3x0.4
MGA-675T6 4.9 - 6.0 5.5 2.7 5 0.9 16.3 NA 14.7 UTSLP
ALM-11036 0.776 - 0.87 0.849 5 92 0.78 15.6 4 37.6 SMT 7x10
ALM-1106 0.9 - 2.5 1.575 2.85 8 0.8 14.3 1.8 (IP1dB) 4.7 (IIP3) MCOB 2x2x1.1
ALM-11136 0.87 - 0.915 0.915 5 92 0.76 15.4 4.5 38.2 SMT 7x10
ALM-11236 1.71 - 1.85 1.785 5 99 0.67 15.9 3.5 32.3 SMT 7x10
ALM-11336 1.85 - 1.98 1.98 5 100 0.72 15.3 3.8 35.5 SMT 7x10
ALM-2506 0.9 - 2.5 1.575 2.85 8 0.8 14.3 1.9 (IP1dB) 4.7 (IIP3) MCOB 2x2x1.1
Component Part Number Test Freq. Vd/Id NF Gain IP1dB IIP3 Cell-Band PCS-Band Package
(GHz) (V/mA) (dB) (dB) (dBm) (dBm) Rejection Rejection (mm)
GPS LNA/Filter Module ALM-1412 1.575 2.85/8 0.82 13.5 2.7 7 54 63 MCOB 3.3x2.1x1.1
ALM-1612 1.575 2.7/6 0.95 18.2 -8 2 69 67 MCOB 3.3x2.1x1.0
ALM-2412 1.575 2.85/9 0.85 13.5 2.2 6.1 63 65 MCOB 3.3x2.1x1.1
ALM-2712 1.575 2.7/7.5 12.6 14.2 5 2 – – MCOB 3x2.5x1
GPS Filter/LNA/Filter ALM-1712 1.575 2.7/8 1.65 12.8 3 3 104 92.6 E-pHEMT & FBAR,
Module MCOB 4.5x2.2x1.0
ALM-1812 1.575 2.8/6 1.9 18.5 -8 2 95 90 E-pHEMT & FBAR,
MCOB 4.5x2.2x1.0
ALM-1912 1.575 2.7/6 1.62 19.3 -8 1.5 >57 >53 MCOB 2.9x2x1
Component Part Number Freq. Range Test Freq. Vd Id NF Gain OIP3 P1dB Package
(GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm) (mm)
Variable Gain Amplifier ALM-80110 0.4 - 1.6 0.9 5 110 4.8 (-27) to 13.6 40.3 23.3 MCOB 5.0x5.0x1.1
ALM-80210 1.6 - 2.6 1.9 5 110 5.3 (-25.5) to 9.8 40.8 23.6 MCOB 5.0x5.0x1.1
27
RFICs (GaAs and Silicon)
GaAs RFICs
Component Part Number Freq. Range Test Freq. Vd Id NF Gain OIP3 P1dB Package
(GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm) (mm)
WaferCap Amplifier VMMK-2103 0.5 - 6.0 3 5 24 1.7 13.9 8 (IIP3) 0 (IP1dB) 1x0.5x0.25
VMMK-2203 0.9 - 11 6 5 25 1.9 16.5 14 5 1x0.5x0.25
VMMK-2303 0.5 - 6.0 6 1.8 20 1.9 14.1 22 9 1x0.5x0.25
VMMK-2403 1.5 - 4.0 3 3 38 1.8 15 29 16.5 1x0.5x0.25
VMMK-2503 1.0 - 12 6 5 65 3.3 14 27 17 1x0.5x0.25
VMMK-3503 0.5 - 18 – 5 30 3.6 12 10 – 1x0.5x0.25
VMMK-3603 1-6 – 5 35 1.5 17 25 9 1x0.5x0.25
VMMK-3803 3 - 10 – 3 20 1.7 18.5 18 4.5 1x0.5x0.25
Component Part Number Freq. Range Bias IRL ORL Insertion Loss Directivity Package
(GHz) (V@mA) (dB) (dB) (dB) (dB) (mm)
WaferCap Detector VMMK-3113 2-6 1.5V@0.15mA 20 20 0.2 - 0.35 15 1x0.5x0.25
VMMK-3213 6 - 18 1.5V@0.15mA 20 20 0.15 - 0.5 15 1x0.5x0.25
VMMK-3313 15 - 33 1.5V@0.15mA 20 20 0.25 - 0.7 15 1x0.5x0.25
VMMK-3413 25 - 45 1.5V@0.15mA 20 20 0.4 - 0.8 18 - 7 1x0.5x0.25
Component Part Number Freq. Range Test Freq. Voltage Current NF Gain P1dB OIP3 Package
(GHz) (GHz) (Vdg) (mA) (dB) (dB) (dBm) (dBm) (mm)
Mixers- IAM-91563 0.8 - 6 1.9 3 9 8.5 9.0 -8 -6 SOT-363 (SC-70)
Downconverter IAM-92516 0.4 - 3.5 1.9 5 26 12.5 -6.0 9 27 (IIP3) LPCC 3x3
Component Part Number Freq. Range Test Freq. Vdd Idq Gain P1dB Pout @ Atten Package
(GHz) (GHz) (V) (mA) (dB) (dB) 2.5% EVM (dB) (mm)
GaAs WiMAX Power ALM-42216 2.3 - 2.7 2.5 3.3 240 30 30 23.5 20 MCOB 5.0x5.0x1.1
Amplifier Module ALM-42316 3.3 - 3.8 3.5 3.3 240 30 30.5 23 18 MCOB 5.0x5.0x1.1
MGA-43128 0.7 - 0.8 0.75 5 780 33.4 36 29.2 1.8 QFN 5x5
MGA-43228 2.3 - 2.5 2.4 5 1023 38.5 36 29.1 23.8 QFN 5x5
MGA-43328 2.5 - 2.7 2.6 5 1017 37.4 36 29.3 24.5 QFN 5x5
MGA-43428 0.86 - 0.97 0.85 5 800 >30 36 28dBm@ – MCOB 5x5
MGA-43528 1.8 - 2.0 1.9 5 1000 >30 35 50dBc – MCOB 5x5
MGA-43628 2.0 - 2.2 2.1 5 1000 >30 35 ACLR – MCOB 5x5
Component Part Number Freq. Range Test Freq. BCTRL Gain PAE of 19% IP1dB Package
(GHz) (GHz) (dB) (dBm) (mm)
WiMAX/WiFi Amplifier MGA-22003 2.3 - 2.7 2.5 2.8 35 19 31 Small Size 3x3x1
Module MGA-22103 2.5 - 2.7 16 QAM WiMAX EVM <-32dB (2.5%) at 25 dBm Small Size 3x3x1
MGA-23003 3.3 - 3.8 3.5 2.8 35 18 31 Small Size 3x3x1
MGA-25203 5.1 - 5.9 5.4 2.8 30 13 30 Small Size 3x3x1
AFEM-S257 2.5 - 2.7 16 QAM WiMAX EVM <-30dB min. (2.5%) at 24dBm MCOB 5x7x1
AFEM-S102 2.4 - 2.5 SP3T Switch 2.5GHz WiFi/Bluetooth Fem Small Size 2.2x2.2x0.55
AFEM-S105 5.1 - 5.9 EVM <-32.5dB at 15dBm, <-35dB at 12dBm Small Size 3.2x3.2x0.6
Component Part Number Freq. Range Test Freq. Vdd Idq NF Gain IIP3 IP1dB Package
(GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm) (mm)
WiFi Dual Band LNA ALM-2812 2.4 - 2.5 2.45 3.3 15 0.8 16.7 6.1 5.8 MCOB 3.0x3.0x1.1
Module 4.9 - 6.0 5.5 3.3 23.4 1.4 23.2 2.2 12.8 MCOB 3.0x3.0x1.1
InGap HBT
Component Part Number Freq. Range Test Freq. Vd Id Gain NF P1dB OIP3 Package
(GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm) (mm)
Gain Block AVT-50663 DC-6000 2 5 36 15.3 4 12.5 25 SOT-363 (SC70)
AVT-51663 DC-6000 2 5 37 19.6 3.2 12.9 25.1 SOT-363 (SC70)
AVT-52663 DC-6000 2 5 45 15.3 4 12.7 27 SOT-363 (SC70)
AVT-53663 DC-6000 2 5 48 19.6 3.2 15.1 26.5 SOT-363 (SC70)
AVT-54689 0.05 - 6 2 5 58 4.1 17.1 17.4 29.6 SOT-89
AVT-55689 0.05 - 6 2 5 75 4.3 17.2 19.5 32.5 SOT-89
28
RFICs (GaAs and Silicon)
Silicon RFICs
Component Part Number Freq. Range Test Freq. Voltage Current NF Gain P1dB OIP3 Package
(GHz) (GHz) (Vdg) (mA) (dB) (dB) (dBm) (dBm)
Silicon Broadband ABA-31563 DC - 3.5 2.0 3 14.5 3.8 21.0 +2.0 13.0 SOT-363 (SC-70)
Amplifiers ABA-32563 DC - 2.5 2.0 3 38 3.4 18.5 +8.0 19.0 SOT-363 (SC-70)
ABA-51563 DC - 3.5 2.0 5 18 3.7 21.5 +1.8 11.4 SOT-363 (SC-70)
ABA-52563 DC - 3.5 2.0 5 35 3.3 21.5 +9.8 19.9 SOT-363 (SC-70)
ABA-53563 DC - 3.5 2.0 5 46 3.5 21.5 +12.7 22.9 SOT-363 (SC-70)
ABA-54563 DC - 3 2.0 5 79 4.4 23.0 +16.1 27.8 SOT-363 (SC-70)
Silicon Darlington ADA-4543 DC - 2.5 0.9 3.4 15 3.7 15.1 +1.9 15.0 SOT-343 (SC-70)
Amplifiers ADA-4643 DC - 2.5 0.9 3.5 35 4.0 17.0 +13.4 28.3 SOT-343 (SC-70)
ADA-4743 DC - 2.5 0.9 3.8 60 4.2 16.5 +17.1 32.6 SOT-343 (SC-70)
ADA-4789 DC - 2.5 0.9 3.8 60 4.2 16.5 +17.1 32.6 SOT-89
Silicon Fixed Gain MSA-0300 DC - 2.8 1 Typ 5 35 6 12.5 10 23 Chip
Amplifiers MSA-0600 DC - 1 0.5 Typ 3.5 16 2.8 19.5 2 14.5 Chip
MSA-0836 DC - 4 1.0 7.8 36 3.0 23.0 +12.5 27.0 35 Micro-X
MSA-0870 DC - 4 1.0 7.8 36 3.0 23.5 +12.5 27.0 70 mil
MSA-0886 DC - 4 1.0 7.8 36 3.3 22.5 +12.5 27.0 86 Plastic
MSA-3111 DC - 0.5 1.0 4.5 29 3.5 18.4 +9 23.0 SOT-143
MSA-3186 DC - 0.5 1.0 4.7 29 3.5 18.7 +9 21.0 86 Plastic
MSA-2011 DC - 1.0 1.0 5 32 4.3 16.2 +9 22.0 SOT-143
MSA-2086 DC - 1.1 1.0 5 32 3.7 16.6 +9 22.0 86 Plastic
MSA-0711 DC - 1.9 1.0 3.8 22 5.0 12.0 +5.5 18.0 SOT-143
MSA-0736 DC - 2.4 1.0 4 22 4.5 13.0 +5.5 19.0 35 Micro-X
MSA-0770 DC - 2.5 1.0 4 22 4.5 13.0 +5.5 19.0 70 mil
MSA-0786 DC - 2.0 1.0 4 22 5.0 12.5 +5.5 19.0 86 Plastic
MSA-0986 0.1 - 5.5 2.0 7.8 35 6.2 7.2 +10.5 23.0 86 Plastic
MSA-0236 DC - 2.7 1.0 5 25 6.5 12.0 +4.5 17.0 35 Micro-X
MSA-0270 DC - 2.8 1.0 5 25 6.5 12.0 +4.5 17.0 70 mil
MSA-0286 DC - 2.5 1.0 5 25 6.5 12.0 +4.5 17.0 86 Plastic
MSA-0420 DC - 4.0 1.0 6.3 90 6.5 8.5 16 30.0 200 mil BeO
MSA-0436 DC - 3.8 1.0 5.25 50 6.5 8.5 +12.5 25.5 35 Micro-X
MSA-0470 DC - 4.0 1.0 5.25 50 6.5 8.5 +12.5 25.5 70 mil
MSA-0486 DC - 3.2 1.0 5.25 50 7.0 8.0 +12.5 25.5 86 Plastic
MSA-0505 0.02 - 2.3 1.0 8.4 80 6.5 7.0 18 29.0 05 Plastic
MSA-0520 0.02 - 2.8 1.0 12 165 6.5 8.5 +23 33.0 200 mil BeO
MSA-9970 DC - 2.0 1.0 7.8 35 16.0 +14.5 25.0 70 mil
MSA-0311 DC - 2.3 1.0 4.7 35 6.0 11.0 +9 22.0 SOT-143
MSA-0336 DC - 2.7 1.0 5 35 6.0 12.0 +10 23.0 35 Micro-X
MSA-0370 DC - 2.8 1.0 5 35 6.0 12.0 +10 23.0 70 mil
MSA-0386 DC - 2.4 1.0 5 35 6.0 12.0 +10 23.0 86 Plastic
MSA-0611 DC - 0.7 0.5 3.3 16 3.0 18.0 +2 14.0 SOT-143
MSA-0636 DC - 0.9 0.5 3.5 16 2.8 19.0 +2 14.5 35 Micro-X
MSA-0670 DC - 1.0 0.5 3.5 16 2.8 19.5 +2 14.5 70 mil
MSA-0686 DC - 0.8 0.5 3.5 16 3.0 18.5 +2 14.5 86 Plastic
MSA-1105 0.05 - 1.3 0.5 5.5. 60 3.6 12.0 +17.5 30.0 05 Plastic
MSA-1110 0.05 - 1.6 0.5 5.5 60 3.5 12.0 +17.5 30.0 100 mil
MSA-1120 0.05 - 1.6 0.5 5.5 60 3.5 12.0 +17.5 30.0 200 mil BeO
MSA-2111 DC - 0.5 0.9 3.6 29 3.3 17.5 10 20.0 SOT-143
29
Transistors
Transistors
Component Part Number Freq. Range Test Freq. Voltage NF Gain P1dB S21E OIP3 Package
(GHz) (GHz) (V) (dB) (dB) (dBm) (dB) (dBm)
Silicon Bipolar AT-30511 DC - 5 0.9 2.7 1.1 16.0 +7.0 17.9 17.0 SOT-143
Transistor
AT-30533 DC - 5 0.9 2.7 1.1 13.0 +7.0 15.2 17.0 SOT-23
AT-31011 DC - 5 0.9 2.7 0.9 13.0 +9.0 19.1 20.0 SOT-143
AT-31033 DC - 5 0.9 2.7 0.9 11.0 +9.0 15.8 20.0 SOT-23
AT-32011 DC - 5 0.9 2.7 1.0 14.0 +13.0 18.9 24.0 SOT-143
AT-32032 DC - 6 0.9 2.7 1.0 15.0 +13.0 11.5 23.0 SOT-323
AT-32033 DC - 5 0.9 2.7 1.0 12.5 +13.0 15.1 24.0 SOT-23
AT-32063 DC - 5 0.9 2.7 1.1 14.5 +12.0 17.0 24.0 SOT-363 (SC-70)
AT-41435 DC - 6 2.0 8.0 1.7 14.0 +19.0 17.2 35 micro-X
AT-41486 DC - 6 1.0 8.0 1.4 18.0 +18.0 17.5 86 mil Plastic
AT-41535 DC - 6 2.0 8.0 1.7 14.0 19.0 11.0 – 35 micro-X
AT-41500 DC - 6 2.0 8.0 1.7 12.5 18 11.0 – Chip
AT-41511 DC - 5 0.9 5.0 1.0 15.5 +14.5 15.8 25.0 SOT-143
AT-41532 DC - 6 0.9 5.0 1.0 15.5 +14.5 13.3 25.0 SOT-323
AT-41533 DC - 5 0.9 5.0 1.0 14.5 +14.5 13.9 25.0 SOT-23
AT-41586 DC - 6 1.0 8.0 1.4 17.0 +18.0 17.0 86 mil Plastic
AT-42000 DC - 6 2 Typ 8.0 1.9 14.0 21 11.5 Chip
AT-42010 DC - 6 2.0 8.0 1.9 13.5 21 11.5 – 100 mil
AT-42035 DC - 6 2.0 8.0 2.0 13.5 +21.0 11.0 35 micro-X
AT-42036 DC - 6 2.0 8.0 1.9 13.5 +21.0 16.6 36 micro-X
AT-42070 DC - 6 2.0 8.0 1.9 14.0 +21.0 17.3 70 mil stripline
AT-42085 DC - 6 2.0 8.0 1.9 13.5 +20.5 17.0 85 mil Plastic
AT-42086 DC - 6 2.0 8.0 1.9 13.0 +20.5 16.5 86 mil Plastic
Component Part Number Freq. Range (GHz) Voltage (V) Test Freq. (GHz) P1dB (dBm) G1dB (dBm) Package
Medium Power AT-64020 DC - 4 16 2 +28 10 200 mil BeO disk
Si Transistor
AT-64023 DC - 4 16 4 26.5 9.5 230 mil Be0 disk
AT-64000 DC - 4 16 4 26.5 9.5 Chip
30
Transistors
Transistors
Component Part Number Freq. Range Test Freq. Vdd / Idq NF Ga P1dB OIP3 Gate Width Package
(GHz) (GHz) (V) (dB) (dB) (dBm) (dBm) (um) (mm)
Single Voltage ATF-501P8 .05 - 6 2 4.5/280 1.8 14.6 +28 +47 6400 LPCC 2x2
Low Noise
ATF-50189 .05 - 6 2 4.5/280 1.1 15.5 +29.1 +45.3 6400 SOT-89
GaAs E-pHEMTs
ATF-511P8 .05 - 6 2 4.5/200 1.4 14.8 +30 +42 6400 LPCC 2x2
ATF-521P8 05 - 6 2 4.5/200 1.5 17.0 +26.5 +42 3200 LPCC 2x2
ATF-52189 05 - 6 2 4.5/200 1.5 16.0 +27.0 +42 3200 SOT-89
ATF-531P8 05 - 6 2 4.0/135 0.6 20.0 +24.5 +38 1600 LPCC 2x2
ATF-53189 05 - 6 2 4.0/135 0.85 15.5 +23.0 +40 1600 SOT-89
ATF-54143 .45 - 6 2 3.0/60 0.5 16.6 +20.4 +36 800 SOT-343 (SC-70)
ATF-541M4 .45 - 10 2 3.0/60 0.5 17.5 +21.4 +36 800 MiniPak Package
ATF-55143 .45 - 6 2 2.7/10 0.6 17.7 +14.4 +24 400 SOT-343 (SC-70)
ATF-551M4 .45 - 10 2 2.7/10 0.5 17.5 +14.6 +24 400 MiniPak Package
ATF-58143 .45 - 6 2 3.0/30 0.5 16.5 +19 +30.5 800 SOT-343 (SC-70)
Low Noise ATF-33143 .45 - 6 2 4.0/80 0.5 15.0 +22 +33.5 1600 SOT-343 (SC-70)
GaAs pHEMTS
ATF-331M4 .45 - 6 2 4.0/80 0.6 15.0 +19 +31 1600 MiniPak Package
ATF-34143 .45 - 6 2 4.0/60 0.5 17.5 +20 +31.5 800 SOT-343 (SC-70)
ATF-35143 .45 - 6 2 2.0/15 0.4 18.0 +11 +21 400 SOT-343 (SC-70)
ATF-38143 .45 - 6 2 2.0/10 0.4 16.0 +12 +22 800 SOT-343 (SC-70)
ATF-36077 1.5 - 18 12 1.5 0.5 12.0 +5 – 200 70 mil SM
ATF-36163 1.5 - 18 12 1.5 1.2 10.0 +5 – 200 SOT-363 (SC-70)
VMMK-1218 0.5 - 18 – 3/20 0.7 10.7 12 12 – SM 1x0.5
VMMK-1225 0.5 - 26 – 2/20 0.9 11 8 23 – SM 1x0.5
31
Diodes — PIN
MiniPak
Single Dual Anode Dual Cathode Series Pair Common Anode Common Cathode
Configuration
32
Diodes — PIN
Single Dual Anode Dual Cathode Series Pair Common Anode Common Cathode
Configuration
PIN HSMP-386D
HSMP-389D
PIN HSMP-3816
HSMP-3866
PIN HSMP-386L
HSMP-389L HSMP-389R HSMP-389T HSMP-389U HSMP-389V
33
Diodes — PIN
PIN Diodes
Application Part Number Ct (pF) RS (Ω) VBR (V) Trr (nS) Lifetime (nS)
(max/typ) (max) (min) (typ) (typ)
Low Distortion Attenuator HSMP-381x 0.35/0.27 3.0 100 300 1500
Low Distortion/Low Inductance Attenuator HSMP-481x 0.40/0.35 3.0 100 300 1500
Low Resistance Limiter HSMP-382x 0.8/0.6 0.6 50 7 70
Low Inductance Limiter HSMP-482x 1.0/0.75 0.6 50 7 70
Low Current Switch/ Attenuator HSMP-383x 0.3/0.2 1.5 200 80 500
Low Current Switch/ Attenuator HMPP/HSMP-386x - / 0.2 1.5 typ 50 80 500
Low Resistance Switch HMPP/HSMP-389x 0.30/0.20 2.5 50 – 200
Low Resistance/Low Inductance Switch HSMP-489X 0.38/0.33 2.5 50 – 200
Component Part Freq Range TX-ANT IL ANT-RX TX RL RX RL TX-ANT ANT-RX TX-RX RX-TX TX TX IIP3 Package
Number (MHz) (dB) IL (dB) (dB) (dB) ISO (dB) ISO (dB) ISO ISO P0.1dB (dBm) (mm)
(dB) (dB) (dBm)
TD-SCDMA SPDT ALM-40220 2010-2025 0.45 0.6 25 25 27 40 40 26 41 60 5.0x5.0x1.0 5-PIN MCOB
Switch
Component Part Freq Range IIP3 IP1dB Dynamic Range IL VSWR Package
Number (MHz) (dBm) (dBm) (dB) (dB) (dB) (mm)
50MHz – 4GHz PIN Diode ALM-38140 50-1000 50 28.8 38 2.8 1.4 3.8x3.8x1.0
Variable Attenuator MCOB
1000-2000 48.9 35.6 36 3.2 1.4
Module
34
Diodes — Schottky Diode
MiniPak
2 1 2 1 2 1
(0) (2) (5)
Schottky HMPS-2820 HMPS-2822 HMPS-2825
HSMS-2850 HSMS-2852
HSMS-8101 HSMS-8202
35
Diodes — Schottky Diode
HSMS-2855
High Isolation Unconnected Trio Common Common Bridge Quad Ring Quad
Unconnected Pair Cathode Quad Anode Quad
Configuration
36
Diodes — Schottky Diode
Schottky-Barrier Diodes
Application Part Number VBR (V) VF (mV) VF @ IF (V @ mA) Ct (pF) RD (Ω) Volt. Sens. (Υ) (mV/mW) Rv (KΩ)
(min) (max) (max) (typ) (typ) (typ)
900 MHz 2.45 GHz 5.8 GHz
IF = 1 mA
General Purpose Detector HMPS/HSMS-282x 15 340 0.7 @ 30 1.0 12.0 – – – –
Clipping/Clamping HBAT-540x 30 – 800 @ 100 3.0 2.4 – – – –
High Current Clipping/ HSMS-270x 15 – 550 @ 100 6.7 0.65 – – – –
Clamping
Lowest flicker noise HSMS-281x 20 400 1.0 @ 35 1.2 15.0 – – – –
High VBR HSMS-280x 70 400 1.0 @ 35 2.0 35 – – – –
Zero bias detector HSMS-285x – 250 0.15 @ 0.1 0.3 – 40 30 22 8
High frequency up to HSMS-286x 4 350 0.25 @ 0.1 0.3 – 50 35 25 5
14 GHz
Mixer HSMS-8x0x 4 350 0.25 @ 0.1 0.26 11.0 – 35 25 5
37
mmW MMICs
Component Part Number Freq. Range Insertion Loss Isolation Input Control Package
(GHz) (dBm) dB P1dB Input
(dBm) (Vdc)
GaAs MMIC SPDT Switch AMMC-2008 DC - 50 2.3 25 14 0 / -5 Chip
Component Part Number RF Freq. IF Freq. Conversion LO/RF Iso IIP3 Image Reject Package
(GHz) (GHz) Gain (dB) (dB) (dBm) (mm)
GaAs MMIC Mixers AMMC-3040 18 - 36 DC - 3 -9.5 31 23 – Chip
AMMC-6530 5 - 30 DC - 5 -10 22 18 15 Chip
AMMP-6522 7 - 20 DC - 3.5 13 -4 15 SM 5x5
AMMP-6530 5 - 30 DC - 5 -8 22 18 15 SM 5x5
AMMP-6545 18-45 DC - 3.5 -11 30 11 – SM 5x5
Component Part Number Input Freq. Output Freq. IP1dB Pout Fo Package
(GHz) (GHz) (dBm) (dBm) (dBc) (mm)
GaAs MMIC Doublers AMMC-6120 4 - 12 8 - 24 2.0 15 25 Chip
AMMC-6140 10 - 20 20 - 40 5.0 -1 30 Chip
AMMP-6120 4 - 12 8 - 24 2.0 15 25 SM 5x5
38
Microwave Radio Link Application Circuit
IRM LNA
39
Microwave Radio Link Application Circuit
IRM LNA
40
Microwave Radio Link Application Circuit
IRM LNA
41
Microwave Radio Link Application Circuit
IRM LNA
42
Microwave Radio Link Application Circuit
x2
Buffer
VCO
Synth.
Part Number Freq. Range Test Freq. Vd Id Gain NF P1dB OIP3 Package
(GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm) (mm)
ABA-53563 DC - 3.5 2 5 46 21.5 3.5 12.7 22.9 SOT-363 (SC70)
ABA-54563 DC - 3 2 5 79 23 4.4 16.1 27.8 SOT-363 (SC70)
ADA-4789 DC - 2.5 0.9 3.8 60 16.5 4.2 17.1 32.6 SOT-89
ATF-54143 0.45 - 6 2 3 60 16.6 0.5 20.4 36 SOT-363 (SC70)
ATF-541M4 0.45 - 10 2 3 60 17.5 0.5 21.4 36 MiniPak Package
AVT-50663 DC-6000 2 5 36 15.3 4 12.5 25 SOT-363 (SC70)
AVT-52663 DC-6000 2 5 45 15.3 4 12.7 27 SOT-363 (SC70)
AVT-53663 DC-6000 2 5 48 19.5 3.2 15.1 26.5 SOT-363 (SC70)
MGA-30489 0.25 - 3.0 1.9 5 97 13.3 3 – 39 SOT-89
MGA-30689 0.04 - 2.6 1.95 5 104 14.6 3.3 – 40 SOT-89
MGA-30889 0.04 - 2.6 0.9 5 65 15.5 – – 38 SMT 4.5x4.1x1.5
MGA-565P8 0.1 - 3 2 5 67 21.8 – – – LPCC2x2
MGA-62563 0.1 - 3 0.5 3 60 22 0.9 17.8 32.9 SOT-363 (SC70)
VMMK-2403 1.5 - 4.0 3 3 38 15 1.8 16.5 29 1x0.5x0.25
VMMK-2503 1.0 - 1.2 6 5 65 14 3.3 17 27 1x0.5x0.25
Part Number Freq. Range IIP3 IP1dB Dynamic Range IL VSWR Package
(GHz) (dBm) (dBm) (dB) (dB) (dB) (mm)
ALM-38140 50 - 1000 50 28.8 38 2.8 1.4 3.8x3.8x1.0 MCOB
1000 - 2000 48.9 35.6 36 3.2 1.4
Part Number Freq. Range Test Freq. IIP3 Attenuation Insertion Loss Return Loss Package
(GHz) (GHz) (dBm) (dB) (dB) (dB) (mm)
HSMP-3816 0.3 - 4 1 45 38 -3 -22 SOT - 25
HSMP-3866 0.3 - 4 1 30 36 -2.5 -18 SOT - 25
43
Your Imagination. Our Innovation
For product information and a complete list of distributors, For technical support please email a Technical Response Center in
please go to our web site: your region:
www.avagotech.com United States: support@avagotech.com
www.avagotech.com/rf Europe: info@promotionteam.de
Asia Pacific: pacrim.components@avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2011 Avago Technologies. Obsoletes AV00-0182EN
AV00-0252EN 06/08/11