AOD5N50

500V,5A N-Channel MOSFET

General Description Product Summary

The AOD5N50 is fabricated using an advanced high

voltage MOSFET process that is designed to deliver high VDS 600V@150℃
levels of performance and robustness in popular AC-DC ID (at VGS=10V) 5A
applications.By providing low RDS(on), Ciss and Crss along
RDS(ON) (at VGS=10V) < 1.6Ω
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
100% UIS Tested!
100% Rg Tested!

TO252
DPAK
Top View Bottom View D

D
D

S G
G
S S
G

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 5
ID
CurrentB TC=100°C 3.1 A
Pulsed Drain Current C IDM 17
Avalanche Current C IAR 2.8 A
C
Repetitive avalanche energy EAR 118 mJ
H
Single plused avalanche energy EAS 235 mJ
Peak diode recovery dv/dt dv/dt 5 V/ns
TC=25°C 104 W
PD
Power Dissipation B Derate above 25oC 0.83 W/ oC
Junction and Storage Temperature Range TJ, TSTG -50 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C

Thermal Characteristics
Parameter Symbol Typical Maximum Units
A,G
Maximum Junction-to-Ambient RθJA 43 55 °C/W
Maximum Case-to-sink A RθCS - 0.5 °C/W
Maximum Junction-to-CaseD,F RθJC 1 1.2 °C/W

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 AOD5N50

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 500
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=150°C 600 V
BVDSS o
Zero Gate Voltage Drain Current V/ C
/∆TJ ID=250µA, VGS=0V 0.6
VDS=500V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
VDS=400V, TJ=125°C 10
IGSS Gate-Body leakage current VDS=0V, VGS=±30V ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V ID=250µA 3.4 4.1 4.5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A 1.2 1.6 Ω
gFS Forward Transconductance VDS=40V, ID=2.5A 5 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 1 V
IS Maximum Body-Diode Continuous Current 5 A
ISM Maximum Body-Diode Pulsed Current 17 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 430 538 670 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 40 58 80 pF
Crss Reverse Transfer Capacitance 2.5 4.5 7 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.2 2.3 3.5 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 9 11.5 14 nC
Qgs Gate Source Charge VGS=10V, VDS=400V, ID=5A 3 3.8 4.6 nC
Qgd Gate Drain Charge 2 4.1 6.2 nC
tD(on) Turn-On DelayTime 18 ns
tr Turn-On Rise Time VGS=10V, VDS=250V, ID=5A, 32 ns
tD(off) Turn-Off DelayTime RG=25Ω 34 ns
tf Turn-Off Fall Time 22 ns
trr Body Diode Reverse Recovery Time IF=5A,dI/dt=100A/µs,VDS=100V 145 182 220 ns
Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V 1.7 2.2 2.7 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOD5N50

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 100
10V
VDS=40V
8 -55°C

10
6.5V
6
ID (A)

ID(A)
125°C
6V
4
1
VGS=5.5V
2
25°C

0 0.1
0 5 10 15 20 25 30 2 4 6 8 10
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

4.0 3

3.5
Normalized On-Resistance 2.5 VGS=10V
3.0 ID=2.5A
VGS=10V 2
2.5
RDS(ON) (Ω)

2.0 1.5

1.5
1
1.0
0.5
0.5

0.0 0
0 2 4 6 8 10 12 -100 -50 0 50 100 150 200
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage
1.2 1.0E+02
ID=30A
1.0E+01
125°C
1.1 40
BVDSS (Normalized)

1.0E+00
IS (A)

1 25°C
125°C 1.0E-01

1.0E-02
0.9
25°C
1.0E-03

0.8 1.0E-04
-100 -50 0 50 100 150 200 0.2 0.4 0.6 0.8 1.0
TJ (oC) VSD (Volts)
Figure 5: Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics

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 AOD5N50

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000

VDS=400V
12 Ciss
ID=2.5A 1000

Capacitance (pF)
VGS (Volts)

9
Coss
100
6

10 Crss
3

0 1
0 3 6 9 12 15 18 0.1 1 10 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 1000

10µs 800
10 TJ(Max)=150°C
RDS(ON) TC=25°C
Power (W)
ID (Amps)

100µs 600
limited
1 1ms
DC 400
10ms
0.1 TJ(Max)=150°C
TC=25°C 200

0.01 0
1 10 100 1000 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=1.2°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOD5N50

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120 6

5
Power Dissipation (W)

90

Current rating ID(A)

4

60 3

2
30
1

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note B) Figure 13: Current De-rating (Note B)

500

TJ(Max)=150°C
400
TA=25°C
Power (W)

300

200

100

0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

1 RθJA=55°C/W
Thermal Resistance

0.1

0.01
PD
Single Pulse
0.001 Ton
T

0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000 10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)

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 AOD5N50

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

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