KSA1220/1220A

KSA1220/1220A

Audio Frequency Power Amplifier

High Frequency Power Amplifier
• Complement to KSC2690/KSC2690A

1 TO-126
1. Emitter 2.Collector 3.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage : KSA1220 - 120 V
: KSA1220A - 160 V
VCEO Collector-Emitter Voltage : KSA1220 - 120 V
: KSA1220A - 160 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) - 1.2 A
ICP *Collector Current (Pulse) - 2.5 A
IB Base Current - 0.3 A
PC Collector Dissipation (Ta=25°C) 1.2 W
PC Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
* PW≤10ms, Duty Cycle≤50%

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB = - 120V, IE = 0 -1 µA
IEBO Emitter Cut-off Current VEB = - 3V, IC = 0 -1 µA
hFE1 * DC Current Gain VCE = - 5V, IC = - 5mA 35 150
hFE2 VCE = - 5V, IC = - 0.3A 60 140 320
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 1A, IB = - 0.2A - 0.4 - 0.7 V
VBE(sat) * Base-Emitter Saturation Voltage IC = - 1A, IB = - 0.2A -1 - 1.3 V
fT Current Gain Bandwidth Product VCE = - 5V, IC = - 0.2A 175 MHz
Cob Output Capacitance VCB = - 10, IE = 0 26 pF
f = 1MHz
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

hFE Classification
Classification R O Y
hFE2 60 ~ 120 100 ~ 200 160 ~ 320

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 KSA1220/1220A
Typical Characteristics

-1.0

A
1000

m
IB = -7mA

-9

-8
mA

=
IB = -6mA

IB

IB
-10
IB = IB = -5mA VCE = -5V
IC[A], COLLECTOR CURRENT

-0.8 Pulse Test

IB = -4mA

hFE, DC CURRENT GAIN

100
-0.6
IB = -3mA

-0.4
IB = -2mA

10
IB = -1mA
-0.2

IB = 0A
-0.0
-0 -10 -20 -30 -40 -50 -60 1
-1E-3 -0.01 -0.1 -1 -10

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

1000
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-10

IC = 5 IB f=1.0MHz
IE=0
Pulse Test
Cob(PF), CAPACITANCE

100
-1
V BE(sat)

-0.1 10
VCE(sat)

-0.01 1
-1E-3 -0.01 -0.1 -1 -10 -1 -10 -100 -1000

IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

Collector-Emitter Saturation Voltage
fTMHz), CURRENT GAIN BANDWIDTH PRODUCT

1000 -10

VCE = -5V
Pulse Test IC MAX. (Pulse)
IC[A], COLLECTOR CURRENT

PW
10

=1

IC MAX. (DC)
m

00
s

100 -1
㎲

Dissipation
1m
s

Limited
D
C
( P im it
S/
b

W ed
L

=5
0m

-0.1
s)

10

KSA1220
KSA1220A
1 -0.01
-0.01 -0.1 -1 -1 -10 -100 -1000

IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 KSA1220/1220A
Typical Characteristics (Continued)

160 20

18
140

16

PC[W], POWER DISSIPATION

120
14
dT(%),IcDERATING

100
12

80 S/b 10
Lim
ited
Di
60 ss 8
ip
a tio
n 6
Li
40 m
ite
d
4
20
2

0
0 50 100 150 200 0
0 50 100 150 200

o
Tc[ C], CASE TEMPERATURE o
TC[ C], CASE TEMPERATURE

Figure 7. Derating Curve of Safe Operating Areas Figure 8. Power Derating

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 KSA1220/1220A
Package Demensions

TO-126
±0.10

8.00 ±0.30 3.25 ±0.20

3.90

±0.20
14.20MAX

11.00
ø3.20 ±0.10

(1.00) (0.50)
0.75 ±0.10

1.75 ±0.20
1.60 ±0.10
±0.20
±0.30

0.75 ±0.10
16.10
13.06

#1 +0.10
2.28TYP 2.28TYP 0.50 –0.05
[2.28±0.20] [2.28±0.20]

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® OPTOPLANAR™ STAR*POWER™
Bottomless™ FASTr™ PACMAN™ Stealth™
CoolFET™ FRFET™ POP™ SuperSOT™-3
CROSSVOLT™ GlobalOptoisolator™ Power247™ SuperSOT™-6
DenseTrench™ GTO™ PowerTrench® SuperSOT™-8
DOME™ HiSeC™ QFET™ SyncFET™
EcoSPARK™ ISOPLANAR™ QS™ TruTranslation™
E2CMOS™ LittleFET™ QT Optoelectronics™ TinyLogic™
EnSigna™ MicroFET™ Quiet Series™ UHC™
FACT™ MICROWIRE™ SLIENT SWITCHER® UltraFET®
FACT Quiet Series™ OPTOLOGIC™ SMART START™ VCX™
STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H3