BBY59...

Silicon Tuning Diode

High Q hyperabrupt tuning diode

Designed for low tuning voltage operation
for VCO's in moblie communications equipment

For control elements as TCXOS and VCXOS

High capacitance ratio and good C-V linearity

BBY59-02V

1 2

Type Package Configuration LS (nH) Marking

BBY59-02V SC79 single 0.6 RR

Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR 15 V
Forward current IF 50 mA
Operating temperature range Top -55 ... 150 °C
Storage temperature Tstg -55 ... 150

1 Jul-18-2002
 BBY59...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current IR nA
VR = 10 V - - 20
VR = 10 V, TA = 85 °C - - 100

AC Characteristics
Diode capacitance CT pF
VR = 1 V, f = 1 MHz 26,6 27.8 29
VR = 2 V, f = 1 MHz 13.6 15.3 17
VR = 3 V, f = 1 MHz 8,4 9.5 10.9
VR = 4 V, f = 1 MHz 6,1 6,95 7,8
Capacitance ratio CT1 /CT4 3,4 4 4,6
VR = 1 V, VR = 4 V
Series resistance rS - 0.45 0.7

VR = 1 V, f = 470 MHz

2 Jul-18-2002
 BBY59...

Diode capacitance CT =
(VR ) Temperature coefficient of the diode

f = 1MHz capacitance TCC =
(VR )

60 0.00095
1/°C
pF

0.00085
50
0.0008
45 0.00075

0.0007

TCC
40
CT

0.00065
35
0.0006
30
0.00055
25 0.0005

20 0.00045

0.0004
15
0.00035
10
0.0003

5 0.00025
0 0.5 1 1.5 2 2.5 3 V 4 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VR VR

3 Jul-18-2002
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