MBRA340, NRVBA340,

SBRA340T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area www.onsemi.com
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay SCHOTTKY BARRIER
contact. Ideally suited for low voltage, high frequency rectification, or RECTIFIER
as free wheeling and polarity diodes in surface mount applications 3.0 AMPERES
where compact size and weight are critical to the system. 40 VOLTS
Features
• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction SMA
• Very Low Forward Voltage Drop CASE 403D
• Guardring for Stress Protection
STYLE 1

• NRVBA Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101 1 2
Qualified and PPAP Capable* Cathode Anode

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant MARKING DIAGRAM

Mechanical Characteristics: A34

• Case: Epoxy, Molded AYWWG
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal A34 = Device Code
Leads are Readily Solderable A = Assembly Location**
• Lead and Mounting Surface Temperature for Soldering Purposes: Y
WW
= Year
= Work Week
260°C Max. for 10 Seconds G = Pb−Free Package
• Polarity: Cathode Lead Indicated by Polarity Band (Note: Microdot may be in either location)
• ESD Ratings: **The Assembly Location code (A) is front side
♦ Machine Model = C optional. In cases where the Assembly Location is
♦ Human Body Model = 3B stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
• Device Meets MSL 1 Requirements

ORDERING INFORMATION
Device Package Shipping†
MBRA340T3G
NRVBA340T3G, SMA 5,000 /
NRVBA340T3G−VF01, (Pb−Free) Tape & Reel
SBRA340T3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

January, 2018 − Rev. 9 MBRA340T3/D
 MBRA340, NRVBA340, SBRA340T3G

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 40 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current IO A
(At Rated VR, TL = 100°C) 3.0

Non−Repetitive Peak Surge Current IFSM A

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 100

Storage/Operating Case Temperature Tstg, TC −55 to +150 °C

Operating Junction Temperature (Note 1) TJ −55 to +150 °C
Voltage Rate of Change dv/dt V/ms
(Rated VR, TJ = 25°C) 10,000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit

Thermal Resistance − Junction−to−Lead (Note 2) RθJL 15 °C/W

Thermal Resistance − Junction−to−Ambient (Note 2) RθJA 81
2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 3) VF TJ = 25°C TJ = 100°C Volts

(IF = 3.0 A) 0.450 0.390

Maximum Instantaneous Reverse Current IR TJ = 25°C TJ = 100°C mA

(VR = 40 V) 0.3 15

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.

TYPICAL CHARACTERISTICS

10 10
IF, INSTANTANEOUS FORWARD

IF, INSTANTANEOUS FORWARD

CURRENT (AMPS)

CURRENT (AMPS)

1 TJ = 125°C 1
TJ = 125°C

TJ = 100°C

TJ = 100°C TJ = 25°C TJ = −55°C TJ = 25°C TJ = −55°C

0.1 0.1
0.10 0.20 0.30 0.40 0.50 0.60 0.10 0.20 0.30 0.40 0.50 0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

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 MBRA340, NRVBA340, SBRA340T3G

IR, MAXIMUM REVERSE CURRENT (AMPS)

100E−3 100E−3
TJ = 125°C TJ = 125°C
IR, REVERSE CURRENT (AMPS)

10E−3
1E−3 10E−3
TJ = 100°C
TJ = 100°C
100E−6
1E−3
10E−6
TJ = 25°C
1E−6 TJ = 25°C
100E−6
100E−9 TJ = −55°C TJ = −55°C
10E−9 10E−6
1E−9
100E−12 1E−6
0 10 20 30 40 0 10 20 30 40
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

IO, AVERAGE FORWARD CURRENT (AMPS)

PFO, AVERAGE POWER DISSIPATION (WATTS)

5 1.8
4.5 dc 1.6
SQUARE
4 freq = 20 kHz 1.4 WAVE
3.5 SQUARE WAVE dc
1.2
3
Ipk/IO = p 1.0
2.5
Ipk/IO = 5 0.8 Ipk/IO = p
2
0.6 Ipk/IO = 5
1.5 Ipk/IO = 10
1 0.4
Ipk/IO = 10
0.5 0.2
Ipk/IO = 20
0 0
25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Current Derating Figure 6. Forward Power Dissipation

TJ, DERATED OPERATING TEMPERATURE (°C)

1000 125
TJ = 25 °C
RqJA = 22 °C/W
115
C, CAPACITANCE (pF)

105 RqJA = 43 °C/W

95 RqJA = 63 °C/W

85
RqJA = 81 °C/W
75
RqJA = 96 °C/W
65

100 55
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance Figure 8. Typical Operating Temperature

Derating

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 MBRA340, NRVBA340, SBRA340T3G

R(t), TRANSIENT THERMAL RESISTANCE (°C/W)

100
D = 0.5
0.2
0.1
10 0.05

0.02
0.01
1

SINGLE PULSE
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, TIME (S)
Figure 9. Thermal Response, Junction−to−Ambient (min pad)
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)

100

D = 0.5

0.2
10 0.1
0.05
0.02
1 0.01

SINGLE PULSE
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, TIME (S)
Figure 10. Thermal Response, Junction to Ambient (1 inch pad)

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 MBRA340, NRVBA340, SBRA340T3G

PACKAGE DIMENSIONS

SMA
CASE 403D
ISSUE H

HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
E 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.

MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
b D A 1.97 2.10 2.20 0.078 0.083 0.087
A1 0.05 0.10 0.20 0.002 0.004 0.008
b 1.27 1.45 1.63 0.050 0.057 0.064
c 0.15 0.28 0.41 0.006 0.011 0.016
D 2.29 2.60 2.92 0.090 0.103 0.115
POLARITY INDICATOR
OPTIONAL AS NEEDED E 4.06 4.32 4.57 0.160 0.170 0.180
(SEE STYLES) HE 4.83 5.21 5.59 0.190 0.205 0.220
L 0.76 1.14 1.52 0.030 0.045 0.060
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE

A1
L c
SOLDERING FOOTPRINT*

4.000
0.157

2.000
0.079

2.000
0.079

SCALE 8:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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