BSO220N03MD G

OptiMOS™3 M-Series Power-MOSFET

Product Summary
Features V DS 30 V
• Dual N-channel R DS(on),max V GS=10 V 22 mΩ
• Optimized for 5V driver application (Notebook, VGA, POL) V GS=4.5 V 27
• Low FOMSW for High Frequency SMPS
ID 7.7 A
• 100% Avalanche tested

• Very low on-resistance R DS(on) @ V GS=4.5 V

• Excellent gate charge x R DS(on) product (FOM) PG-DSO-8

• Qualified for consumer level application

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type Package Marking

BSO220N03MD G PG-DSO-8 220N03MD

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

10 secs steady state

Continuous drain current 1) ID V GS=10 V, T A=25 °C 7.7 6 A

V GS=10 V, T A=90 °C 5.3 4.4

V GS=4.5 V, T A=25 °C 6.9 5.8

V GS=4.5 V, T A=90 °C 4.8 4

Pulsed drain current2) I D,pulse T A=25 °C 54

Avalanche current, single pulse 3) I AS T A=25 °C 7.7

Avalanche energy, single pulse E AS I D=7.7 A, R GS=25 Ω 9 mJ

Gate source voltage V GS ±20 V

Power dissipation1) P tot T A=25 °C 2 1.4 W

Operating and storage temperature T j, T stg -55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

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 BSO220N03MD G

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance,
R thJS - - 50 K/W
junction - soldering point

Thermal resistance, minimal footprint,

R thJA - - 110
junction - ambient t p≤10 s

minimal footprint,
- - 150
steady state

6 cm2 cooling area1),

- - 62.5
t p≤10 s

6 cm2 cooling area1),

- - 90
steady state

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.1

V DS=30 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 10 µA
T j=25 °C

V DS=30 V, V GS=0 V,
- 10 100
T j=125 °C

Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 10 100 nA

Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=6.9 A - 21.6 27 mΩ

V GS=10 V, I D=7.7 A - 18.3 22

Gate resistance RG 0.6 1.3 2.3 Ω

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 9 18 - S
I D=7.7 A

1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. One transistor active.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
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Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 600 800 pF

V GS=0 V, V DS=15 V,
Output capacitance C oss - 230 310
f =1 MHz
Reverse transfer capacitance Crss - 12 -

Turn-on delay time t d(on) - 5.7 - ns

Rise time tr V DD=15 V, V GS=4.5 V, - 2.8 -

Turn-off delay time t d(off) I D=7.7 A, R G=1.6 Ω - 6.4 -

Fall time tf - 3.4 -

Gate Charge Characteristics 4)

Gate to source charge Q gs - 1.8 - nC

Gate charge at threshold Q g(th) - 1.0 -

Gate to drain charge Q gd V DD=15 V, I D=7.7 A, - 0.9 -

Q sw V GS=0 to 4.5 V
Switching charge - 1.7 -

Gate charge total Qg - 3.8 5

Gate plateau voltage V plateau - 3.0 - V

V DD=15 V, I D=7.7 A,
Gate charge total Qg - 7.8 10 nC
V GS=0 to 10 V

V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 3.3 4.4
V GS=0 to 4.5 V

Output charge Q oss V DD=15 V, V GS=0 V - 6.1 8.1

Reverse Diode

Diode continuous forward current IS - - 2.4 A

T A=25 °C
Diode pulse current I S,pulse - - 54

V GS=0 V, I F=7.7 A,
Diode forward voltage V SD - 0.88 1.1 V
T j=25 °C

V R=15 V, I F=I S,
Reverse recovery charge Q rr - - 10 nC
di F/dt =400 A/µs

4)
See figure 16 for gate charge parameter definition

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 BSO220N03MD G
1 Power dissipation 2 Drain current
P tot=f(T A); t p≤10 s I D=f(T A); t p≤10 s
parameter: V GS

2.5 8

2
6

1.5 4.5 V
P tot [W]

I D [A]
4 10 V

2
0.5

0 0
0 40 80 120 160 0 40 80 120 160
T A [°C] T A [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T A=25 °C2); D =0 Z thJA=f(t p)2)

parameter: t p parameter: D =t p/T

102 102
limited by on-state 1 µs
resistance
0.5
10 µs

100 µs 0.2
101
0.1
1 ms 101
0.05
Z thJA [K/W]

0.02
I D [A]

100 10 ms
0.01

100 ms single pulse

10 s
0
10
-1
10

10-2 10-1
-1 0 1 2
10 10 10 10 10-6 10-5 10-4 10-3 10-2 10-1 100 101 102
V DS [V] t p [s]

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 BSO220N03MD G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

60 60

10 V 5V
4.5 V
50 50
2.8 V
3V
3.2 V
40 40
3.5 V

R DS(on) [mΩ]
4V
I D [A]

30 30
4V
4.5 V

5V
20 20
3.5 V
10 V

3.2 V
10 10
3V
2.8 V

0 0
0 1 2 3 0 5 10 15 20 25 30
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
parameter: T j

60 35

30
50

25
40

20
g fs [S]
I D [A]

30

15

20
10

10
5
150 °C
25 °C
0 0
0 1 2 3 4 5 0 5 10 15 20 25 30
V GS [V] I D [A]

Rev.1.1 page 5 2009-11-19

 BSO220N03MD G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=7.7 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA

40 2.5

35

2
30

25 98 %
R DS(on) [mΩ]

1.5

V GS(th) [V]
20
typ

1
15

10
0.5

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

103 102

Ciss

Coss
25 °C
150 °C, 98%

102 101
150 °C
C [pF]

I F [A]

25 °C, 98%

Crss

1
10 100

100 10-1
0 10 20 30 0 0.5 1 1.5 2
V DS [V] V SD [V]

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 BSO220N03MD G
13 Avalanche characteristics 14 Typ. gate charge

I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=7.7 A pulsed

parameter: T j(start) parameter: V DD

10 12

15 V
10
6V 24 V
25 °C
100 °C

125 °C

V GS [V]
I AV [A]

1 6

0.1 0
1 10 100 1000 0 2 4 6 8 10
t AV [µs] Q gate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

34
V GS

32 Qg

30
V BR(DSS) [V]

28

26
V g s(th)

24

22 Q g(th) Q sw Q g ate

Q gs Q gd
20
-60 -20 20 60 100 140 180
T j [°C]

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 BSO220N03MD G

Package Outline

PG-DSO-8: Outline

Footprint
Dimensions in mm

Rev.1.1 page 8 2009-11-19

 BSO220N03MD G

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

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values stated herein and/or any information regarding the application of the device,
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Rev.1.1 page 9 2009-11-19

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