CHAPTER 1

INDUCTION HEATER CIRCUIT

WORKING

I used a simple push-pull oscillator circuit or the so-called ZVS driver. It is also often used in amateur
structures of induction heaters. The scheme (circuit) is so popular that there is lots of Chinese production.
There are several variants of the scheme. We consider the case with the average point of the coil.

ALTERNATE WORKING INDUCTION HEATER CIRCUIT

In general, it’s a bit more stable than two chokes without midpoint. In fact, it is a resonant converter, which
was built as an auto generator. Here each arm of the circuit must be treated as a separate oscillator. The
optimum power supply voltage is 12V, although worked from 3.5V. The power supply should be sufficient
to trigger the FETs.
We are using the N- channel IRFZ44. Choke is taken from a computer ATX power supply. The core is
made from iron powder. Gate resistors have two functions. They simultaneously limit the gate current and
the current of Zener diodes.
The Zener prevents voltage increase through the gate and protects FET from breakdown. They maintain a
stable operating voltage. Although experience shows that when powered from a stable source of 12V no
need for Zener. The transformer primary winding is connected in parallel with a capacitor to form a resonant
circuit.
By changing the parameters of these components the working frequency of the generator can be changed.
As I have said before, the scheme often used for constructing simple induction heaters, although it is not an
optimal due to the absence of the scheme for FETs regulation and good oscillator.

Large currents flow through the circuit, and the capacitor is also operated in hard conditions. Particularly,
if the circuit is used as an induction heater, i.e. if the core is absent or it is not closed. Therefore, I advise
you to use a battery of capacitors connected in parallel with a total capacity of 1 to 4.7 microfarads and
voltage of 630 to 1600V. Optimally is 1000V. Practice shows that 400V, not enough. In the case of the
capacitor bank, all should have the same capacity and voltage. Simple, but the powerful high-voltage
generator can be constructed on the basis of this driver and the TV fly back transformer.

At free part of the core do 2 * 5 or 2 * 6 turns of wire with a diameter of 0.8 mm. I advise using stranded
copper wire with silicone insulation. If you use a fly back transformer from an old TV, be sure to fill
additional resin on high-voltage winding. Otherwise, the transformer will burn.

ZVS DRIVER

A “ZVS driver” is a very simple circuit that can oscillate a large amount of power with about 90%
efficiency. To the right exists a simplified version of the oscillator, so take a look.
When power is applied at +V current starts to flow through both sides of the primary and on to the

MOSFET’s drains. Simultaneously that voltage appears on both of the MOSFET’s gates and starts to turn

them on. Because no two components are exactly alike one MOSFET turns on a little faster than the other

one and more current can then flow through that FET. The extra current flowing in that side of the primary

robs the gate current from the other FET and starts to turn it off. A condenser forms an LC tank with the

primary and the voltage proceeds to rise and fall sinusoidally. If it were not for that capacitor, the current

would continue to increase until the transformer’s core saturated and the MOSFETS exploded.

Imagine that Q1 was the first to turn on. The voltage at point Y will be at near ground while the voltage at

Z rises to a peak and falls back down as the LC tank goes through one half cycle. As the voltage at Z passes

through zero the gate current to Q1 is removed and the MOSFET turns off. The voltage at point Y is now

allowed to start rising and Q2 turns on. That MOSFET clamps the voltage at Z to ground; something that

makes sure Q1 stays off. This same process repeats for Q2 completing the other half cycle, and the oscillator

continues cycling. In order to prevent the oscillator from drawing huge peak currents and exploding, L1 is

added in series with +V as a choke. The LC impedance is what limits the actual current (the choke just

mitigates current spikes).

A keen eye will notice that this oscillator is zero-voltage switching (ZVS), meaning that the MOSFETS

switch when they have zero volts across them. This is good because it allows the MOSFETS to switch

when they are carrying the least power; something that for the most part eliminates the switching losses

which generate huge amounts of heat. This means only small heat sinks are needed, even when oscillating

1000 watts.
Being a resonant oscillator the frequency that the mazilli will run at is determined by the inductance of the

transformer’s primary coil and the capacitor. You can use the following formula to figure this out:

f = 1 / ( 2π * √[L * C] )

f is the frequency in Hertz.

L is the inductance of the primary in Henries.

C is the capacitance of the capacitor in Farads.

Now in reality MOSFETS are rather fragile components and if the gates are +/- more than 30V from the

source the MOSFETS will be destroyed, or at least degraded significantly. In order to prevent this scenario

from occurring we’ll need gate protection; something easily added with a few extra components. See the

schematic to the right.

• The 470 ohm resistors limit the current that charges the gates as too much gate current can cause

damage.

• The 10K resistors pull the gates down to ground to prevent latch up; a process in which the MOSFET

gets stuck on.

• The Zener diodes prevent the gate voltage from exceeding either 12, 15 or 18V depending on the zeners

you use.

• The UF4007 diodes pull the gates down to ground when the voltage on the opposite leg of the tank is

at ground.
One may notice that instead of charging the gates with the LC tank we are instead using +V to charge them

up and we are using the LC tank to discharge them via the ultrafast diodes. This improves the overall

performance of the circuit.

The following schematic was made very easy to understand:

Due to a bit of black magic known as resonant rise the voltage in the LC tank will be about pi*Vcc , so you’ll

need to make sure your MOSFETS can withstand this tension. A good rule of thumb is to use MOSFETS

that are rated at 4x the voltage you plan on feeding the oscillator and the IRFP250 or the better IRFP260 is

a good MOSFET for the task. You’ll need some heatsinks for the MOSFETS, but they do not need to be

large. They must not be put on the same heatsink unless insulating pads are used since the metal back of

the MOSFET is not electrically insulated (it is connected to the drain). Also be sure to use thermal goop

when you attach a heatsink else the thermal transfer will be crap.

The capacitor must be a good one, an MKP, mica or Mylar cap is a good option. Do not use an electrolytic

cap, it will without a doubt explode. The two primary windings must also be wound in the same direction

or else the oscillator will not function. The oscillator will also fail to function if there is no air gap in the

transformer’s core, so always make sure that one exists.

 PROBLEMS WITH THE CIRCUIT
The mazilli oscillator has one fatal flaw: it likes to explode above 70V. 60V, does well, 70 is meh.80
KABLOOEY. The problem is above 70V the powers tend to be so high that the diodes responsible for
turning off the gates fail to fully do so, and the oscillation stops with one MOSFET left on. That’s
essentially a short circuit so the MOSFET responds with suicide. To anyone who is reading this article, I
propose to you a challenge: fix this problem. First one to do so will receive a present. I don’t know what
but it’ll be something. Neon John attempted a fix, but it’s still pretty unreliable.

COMPONENTS USED IN FORMATION OF HEATER

various components used in induction heater formation are as follows:
 Diodes
 Zener diodes
 MOSFETs
 Push pull oscillator

DIODES
A diode is an electrical device allowing current to move through it in one direction with far greater ease
than in the other. The most common kind of diode in modern circuit design is the semiconductor diode,
although other diode technologies exist. Semiconductor diodes are symbolized in schematic diagrams
such as Figure below. The term “diode” is customarily reserved for small signal devices, I ≤ 1 A. The
term rectifier is used for power devices, I > 1 A.

Semiconductor diode schematic symbol: Arrows indicate the direction of electron current flow.

When placed in a simple battery-lamp circuit, the diode will either allow or prevent current through the
lamp, depending on the polarity of the applied voltage. (Figure below)

Diode operation: (a) Current flow is permitted; the diode is forward biased. (b) Current flow is
prohibited; the diode is reversed biased.

When the polarity of the battery is such that electrons are allowed to flow through the diode, the diode is
said to be forward-biased. Conversely, when the battery is “backward” and the diode blocks current, the
diode is said to be reverse-biased. A diode may be thought of as like a switch: “closed” when forward-
biased and “open” when reverse-biased.
Oddly enough, the direction of the diode symbol’s “arrowhead” points against the direction of electron
flow. This is because the diode symbol was invented by engineers, who predominantly use conventional
flow notation in their schematics, showing current as a flow of charge from the positive (+) side of the
voltage source to the negative (-). This convention holds true for all semiconductor symbols possessing
“arrowheads:” the arrow points in the permitted direction of conventional flow, and against the permitted
direction of electron flow.

HYDRAULIC CHECK VALVE ANALOGY

Diode behavior is analogous to the behavior of a hydraulic device called a check valve. A check valve
allows fluid flow through it in only one direction as in Figure below.

Hydraulic check valve analogy: (a) Electron current flow permitted. (b) Current flow prohibited.
Check valves are essentially pressure-operated devices: they open and allow flow if the pressure across
them is of the correct “polarity” to open the gate (in the analogy shown, greater fluid pressure on the
right than on the left). If the pressure is of the opposite “polarity,” the pressure difference across the
check valve will close and hold the gate so that no flow occurs.
Like check valves, diodes are essentially “pressure-” operated (voltage-operated) devices. The essential
difference between forward-bias and reverse-bias is the polarity of the voltage dropped across the diode.
Let’s take a closer look at the simple battery-diode-lamp circuit shown earlier, this time investigating
voltage drops across the various components in Figure below.
.

Diode circuit voltage measurements: (a) Forward biased. (b) Reverse biased.

A forward-biased diode conducts current and drops a small voltage across it, leaving most of the battery
voltage dropped across the lamp. If the battery’s polarity is reversed, the diode becomes reverse-biased,
and drops all of the battery’s voltage leaving none for the lamp. If we consider the diode to be a self-
actuating switch (closed in the forward-bias mode and open in the reverse-bias mode), this behavior
makes sense. The most substantial difference is that the diode drops a lot more voltage when conducting
than the average mechanical switch (0.7 volts versus tens of millivolts).
This forward-bias voltage drop exhibited by the diode is due to the action of the depletion region formed
by the P-N junction under the influence of an applied voltage. If no voltage applied is across a
semiconductor diode, a thin depletion region exists around the region of the P-N junction, preventing
current flow. (Figure below (a)) The depletion region is almost devoid of available charge carriers, and
acts as an insulator:

Diode representations: PN-junction model, schematic symbol, physical part.

The schematic symbol of the diode is shown in Figure above (b) such that the anode (pointing end)
corresponds to the P-type semiconductor at (a). The cathode bar, non-pointing end, at (b) corresponds to
the N-type material at (a). Also note that the cathode stripe on the physical part (c) corresponds to the
cathode on the symbol.
If a reverse-biasing voltage is applied across the P-N junction, this depletion region expands, further
resisting any current through it. (Figure below)

Depletion region expands with reverse bias.

Conversely, if a forward-biasing voltage is applied across the P-N junction, the depletion region collapses
becoming thinner. The diode becomes less resistive to current through it. In order for a sustained current
to go through the diode; though, the depletion region must be fully collapsed by the applied voltage. This
takes a certain minimum voltage to accomplish, called the forward voltage as illustrated in Figure below.

Increasing forward bias from (a) to (b) decreases depletion region thickness.

For silicon diodes, the typical forward voltage is 0.7 volts, nominal. For germanium diodes, the forward
voltage is only 0.3 volts. The chemical constituency of the P-N junction comprising the diode accounts
for its nominal forward voltage figure, which is why silicon and germanium diodes have such different
forward voltages. Forward voltage drop remains approximately constant for a wide range of diode
currents, meaning that diode voltage drop is not like that of a resistor or even a normal (closed) switch.
For most simplified circuit analysis, the voltage drop across a conducting diode may be considered
constant at the nominal figure and not related to the amount of current.

DIODE EQUATION
Actually, forward voltage drop is more complex. An equation describes the exact current through a diode,
given the voltage dropped across the junction, the temperature of the junction, and several physical
constants. It is commonly known as the diode equation:
The term kT/q describes the voltage produced within the P-N junction due to the action of temperature,
and is called the thermal voltage, or Vt of the junction. At room temperature, this is about 26 millivolts.
Knowing this, and assuming a “non-ideality” coefficient of 1, we may simplify the diode equation and
re-write it as such:

You need not be familiar with the “diode equation” to analyze simple diode circuits. Just understand that
the voltage dropped across a current-conducting diode does change with the amount of current going
through it, but that this change is fairly small over a wide range of currents. This is why many textbooks
simply say the voltage drop across a conducting, semiconductor diode remains constant at 0.7 volts for
silicon and 0.3 volts for germanium. However, some circuits intentionally make use of the P-N junction’s
inherent exponential current/voltage relationship and thus can only be understood in the context of this
equation. Also, since temperature is a factor in the diode equation, a forward-biased P-N junction may
also be used as a temperature-sensing device, and thus can only be understood if one has a conceptual
grasp on this mathematical relationship.
A reverse-biased diode prevents current from going through it, due to the expanded depletion region. In
actuality, a very small amount of current can and does go through a reverse-biased diode, called
the leakage current, but it can be ignored for most purposes. The ability of a diode to withstand reverse-
bias voltages is limited, as it is for any insulator. If the applied reverse-bias voltage becomes too great,
the diode will experience a condition known as breakdown (Figure below), which is usually destructive.
A diode’s maximum reverse-bias voltage rating is known as the Peak Inverse Voltage, or PIV, and may
be obtained from the manufacturer. Like forward voltage, the PIV rating of a diode varies with
temperature, except that PIV increases with increased temperature and decreases as the diode becomes
cooler-exactly opposite that of forward voltage.
 Diode curve: showing knee at 0.7 V forward bias for Si, and reverse breakdown.

Typically, the PIV rating of a generic “rectifier” diode is at least 50 volts at room temperature. Diodes
with PIV ratings in the many thousands of volts are available for modest prices.

REVIEW

 A diode is an electrical component acting as a one-way valve for current.

 When voltage is applied across a diode in such a way that the diode allows current, the diode is said to
be forward-biased.
 When voltage is applied across a diode in such a way that the diode prohibits current, the diode is said to
be reverse-biased.
 The voltage dropped across a conducting, forward-biased diode is called the forward voltage. Forward
voltage for a diode varies only slightly for changes in forward current and temperature, and is fixed by the
chemical composition of the P-N junction.
 Silicon diodes have a forward voltage of approximately 0.7 volts.
 Germanium diodes have a forward voltage of approximately 0.3 volts.
 The maximum reverse-bias voltage that a diode can withstand without “breaking down” is called the Peak
Inverse Voltage, or PIV rating.

ZENER DIODE
A Zener diode is a type of diode that allows current to flow not only from its anode to its cathode, but also
in the reverse direction, when the Zener voltage is reached.
Zener diodes have a highly doped p–n junction. Normal diodes break down with a reverse voltage, but the
voltage and sharpness of the knee are not as well defined as for a Zener diode. Normal diodes are not
designed to operate in the breakdown region, whereas Zener diodes operate reliably in this region.
The device was named after Clarence Melvin Zener, who discovered the Zener effect. Zener reverse
breakdown is due to electron quantum tunnelling caused by a high-strength electric field. However, many
diodes described as "Zener" diodes rely instead on avalanche breakdown. Both breakdown types are used
in Zener diodes with the Zener effect predominating at lower voltages and avalanche breakdown at higher
voltages.
Zener diodes are widely used in electronic equipment of all kinds and are one of the basic building blocks
of electronic circuits. They are used to generate low-power stabilized supply rails from a higher voltage and
to provide reference voltages for circuits, especially stabilized power supplies. They are also used to protect
circuits from overvoltage, especially electrostatic discharge (ESD).

OPERATION
A conventional solid-state diode allows significant current if it is reverse-biased above its
reverse breakdown voltage. When the reverse bias breakdown voltage is exceeded, a conventional diode is
subject to high current due to avalanche breakdown. Unless this current is limited by circuitry, the diode
may be permanently damaged due to overheating. A Zener diode exhibits almost the same properties, except
the device is specially designed so as to have a reduced breakdown voltage, the so-called Zener voltage. By
contrast with the conventional device, a reverse-biased Zener diode exhibits a controlled breakdown and
allows the current to keep the voltage across the Zener diode close to the Zener breakdown voltage. For
example, a diode with a Zener breakdown voltage of 3.2 V exhibits a voltage drop of very nearly 3.2 V
across a wide range of reverse currents. The Zener diode is therefore ideal for applications such as the
generation of a reference voltage (e.g. for an amplifier stage), or as a voltage stabilizer for low-current
applications.
Another mechanism that produces a similar effect is the avalanche effect as in the avalanche diode. The
two types of diode are in fact constructed the same way and both effects are present in diodes of this type.
In silicon diodes up to about 5.6 volts, the Zener effect is the predominant effect and shows a marked
negative temperature coefficient. Above 5.6 volts, the avalanche effect becomes predominant and exhibits
a positive temperature coefficient.
In a 5.6 V diode, the two effects occur together, and their temperature coefficients nearly cancel each other
out, thus the 5.6 V diode is useful in temperature-critical applications. An alternative, which is used for
voltage references that need to be highly stable over long periods of time, is to use a Zener diode with a
temperature coefficient (TC) of +2 mV/°C (breakdown voltage 6.2–6.3 V) connected in series with a
forward-biased silicon diode (or a transistor B-E junction) manufactured on the same chip. The forward-
biased diode has a temperature coefficient of −2 mV/°C, causing the TCs to cancel out.
Modern manufacturing techniques have produced devices with voltages lower than 5.6 V with negligible
temperature coefficients, but as higher-voltage devices are encountered, the temperature coefficient rises
dramatically. A 75 V diode has 10 times the coefficient of a 12 V diode.
Zener and avalanche diodes, regardless of breakdown voltage, are usually marketed under the umbrella
term of "Zener diode".
Under 5.6 V, where the Zener effect dominates, the IV curve near breakdown is much more rounded, which
calls for more care in targeting its biasing conditions. The IV curve for Zeners above 5.6 V (being dominated
by Avalanche), is much sharper at breakdown.

Current-voltage characteristic of a Zener diode with a breakdown voltage of 17 V. Notice the change of
voltage scale between the forward biased (positive) direction and the reverse biased (negative) direction.
 Temperature coefficient of Zener voltage against nominal Zener voltage.

MOSFETs
The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device
which is widely used for switching and amplifying electronic signals in the electronic devices. The
MOSFET is a core of integrated circuit and it can be designed and fabricated in a single chip because of
these very small sizes. The MOSFET is a four terminal device with source(S), gate (G), drain (D) and body
(B) terminals. The body of the MOSFET is frequently connected to the source terminal so making it a three
terminal device like field effect transistor. The MOSFET is very far the most common transistor and can
be used in both analog and digital circuits.

MOSFET
The MOSFET works by electronically varying the width of a channel along which charge carriers flow
(electrons or holes). The charge carriers enter the channel at source and exit via the drain. The width of the
channel is controlled by the voltage on an electrode is called gate which is located between source and
drain. It is insulated from the channel near an extremely thin layer of metal oxide. The MOS capacity
present in the device is the main part.
The MOSFET can function in two ways:
Depletion Mode
Enhancement Mode
DEPLETION MODE
When there is no voltage on the gate, the channel shows its maximum conductance. As the voltage on the
gate is either positive or negative, the channel conductivity decreases.

ENHANCEMENT MODE
When there is no voltage on the gate the device does not conduct. More is the voltage on the gate, the better
the device can conduct.
WORKING PRINCIPLE OF MOSFET
The aim of the MOSFET is to be able to control the voltage and current flow between the source and drain.
It works almost as a switch. The working of MOSFET depends upon the MOS capacitor. The MOS
capacitor is the main part of MOSFET. The semiconductor surface at the below oxide layer which is located
between source and drain terminal. It can be inverted from p-type to n-type by applying a positive or
negative gate voltages respectively. When we apply the positive gate voltage the holes present under the
oxide layer with a repulsive force and holes are pushed downward with the substrate. The depletion region
populated by the bound negative charges which are associated with the acceptor atoms. The electrons reach
channel is formed. The positive voltage also attracts electrons from the n+ source and drain regions into the
channel. Now, if a voltage is applied between the drain and source, the current flows freely between the
source and drain and the gate voltage controls the electrons in the channel. Instead of positive voltage if we
apply negative voltage, a hole channel will be formed under the oxide layer.
 MOSFET Block Diagram

P-CHANNEL MOSFET
The P- Channel MOSFET has a P- Channel region between source and drain. It is a four terminal device
such as gate, drain, source, body. The drain and source are heavily doped p+ region and the body or substrate
is n-type. The flow of current is positively charged holes. When we apply the negative gate voltage, the
electrons present under the oxide layer with are pushed downward into the substrate with a repulsive force.
The depletion region populated by the bound positive charges which are associated with the donor atoms.
The negative gate voltage also attracts holes from p+ source and drain region into the channel region.

Enhancement mode
 Depletion Mode
N- CHANNEL MOSFET
The N-Channel MOSFET has a N- channel region between source and drain It is a four terminal device
such as gate, drain , source , body. This type of MOSFET the drain and source are heavily doped n+ region
and the substrate or body is P- type. The current flows due to the negatively charged electrons. When we
apply the positive gate voltage the holes present under the oxide layer pushed downward into the substrate
with a repulsive force. The depletion region is populated by the bound negative charges which are
associated with the acceptor atoms. The electrons reach channel is formed. The positive voltage also attracts
electrons from the n+ source and drain regions into the channel. Now, if a voltage is applied between the
drain and source the current flows freely between the source and drain and the gate voltage controls the
electrons in the channel. Instead of positive voltage if we apply negative voltage a hole channel will be
formed under the oxide layer.
Enhanced mode

Depletion Mode
USING THE MOSFET AS A SWITCH

MOSFET SWITCH
In this circuit arrangement an enhanced mode and N-channel MOSFET is being used to switch a sample
lamp ON and OFF. The positive gate voltage is applied to the base of the transistor and the lamp is ON
(VGS =+v) or at zero voltage level the device turns off (VGS=0). If the resistive load of the lamp was to be
replaced by an inductive load and connected to the relay or diode which is protect to the load. In the above
circuit, it is a very simple circuit for switching a resistive load such as lamp or LED. But when using
MOSFET to switch either inductive load or capacitive load protection is required to contain the MOSFET
device. We are not giving the protection the MOSFET device is damage. For the MOSFET to operate as an
analog switching device, it needs to be switched between its cutoff region where V GS =0 and saturation
region where VGS =+v.
MOSFET is also a transistor. We abbreviate it as Metal Oxide Silicon Field Effect Transistor. It will have
P-channel and N-channel. It consists of a source, gate and drain. Here we connected a resistive load of 24Ω
in series with an ammeter, and a voltage meter connected across the MOSFET. In the transistor the current
flow in the gate is in positive direction and source goes to ground. In BJT’s, the current flow is base-to-
emitter circuit. But in MOSFET there is no current flow because there is a capacitor at the beginning of the
gate, it just requires only voltage. We will know this by doing the simulation process with switching
ON/OFF. When the switch is ON there is no current flow in the circuit, when we taken a resistance of 24Ω
and 0.29 of ammeter voltage then we find negligible voltage drop across the source because there is +0.21V
across MOSFET.
Resistance between drain and source is called RDS. Because of RDS, the voltage drop appears while current
flow in circuit. RDS varies depending on the type of MOSFET (it could be 0.001, 0.005, and 0.05 depending
on the voltage type).
Finally, we will conclude that, the transistor requires current whereas MOSFET require voltage. The driving
requirement for the MOSFET is much better, much simpler as compared to a BJT.

MOSFETs IN INDUCTION HEATERS

3 MOSFETS in parallel did not work very long but none went up in smoke or caught on fire. 1 mosfet pulls
30 amps for several minutes so 3 MOSFETS in parallel should pull 10 amps each for a very long time. 50
amps on 3 MOSFETS for about 45 seconds suddenly amp meter pegged at 100 amps & started humming
like crazy. I tested the circuit 1 MOSFET went bad it is an open circuit I wonder if that make the circuit
stop oscillating? I had this working good yesterday 1 MOSFET at 30 amps I used it for several hours to
heat bent & damaged tools red hot so I could straighten them out good as new. I still need to repair the crow
bar that has the end broken off it needs to be red hot so I can hammer a new tip on the end. The crow bar is
7/8" diameter solid steel 3 ft. long. This was a fun project that turned out to be very useful. Circuit drawing
the 21 VDC is a 100 A transformer filtered DC power supply. 12 VDC is a filtered transformer that produces
10 VDC. This circuit also runs good on a car battery. The circuit drawing is original with a few changes the
transformer filtered power supplies, 6 capacitors = 102 KHz and 8 capacitors = 89.9 KHz.

PUSH PULL OSCILLATOR

One big advantage is more efficient operation. Notice how feedback comes through the 0.05 uF and 0,1 uF
capacitors connected to the Transformer's coil. But see how each capacitor is connected at the ends of the
Transformer's coil. This means that when one capacitor is charging, the other is discharging. And this means
that when one Transistor is off the other is operating. There's always one Transistor operating, unlike the
previous Project where the Transistor was switching on or off during operation. Since the 0,05 uF and 0.1
uF capacitors control circuit operation, try using different values of capacitors in their place.

Push-Pull Oscillator