Integrated Ferroelectrics

ISSN: 1058-4587 (Print) 1607-8489 (Online) Journal homepage: https://www.tandfonline.com/loi/ginf20

I-V characteristics of a ferroelectric field effect

transistor

Todd C. Macleod & Fat Duen Ho

To cite this article: Todd C. Macleod & Fat Duen Ho (2001) I-V characteristics of a ferroelectric
field effect transistor, Integrated Ferroelectrics, 34:1-4, 21-26, DOI: 10.1080/10584580108012870

To link to this article: https://doi.org/10.1080/10584580108012870

Published online: 19 Aug 2006.

Submit your article to this journal

Article views: 77

Citing articles: 4 View citing articles

Full Terms & Conditions of access and use can be found at

https://www.tandfonline.com/action/journalInformation?journalCode=ginf20
I-V Characteristics of a Ferroelectric Field Effect
Transistor
TODD C. MACLEODa* and FAT DUEN Hob'
'NASA, Marshull Space Flight Center. Hirnrwille, AL 351312 und hElectrical and
Cornputer Engineering Department Universin' of Alabama in Hunrsville.
Huntsville. AL 35899

(Received Murih 15. 2000)

There are many possible uses for ferroelectric field effect transistors. To understand their
application, a fundamental knowl-dge of their basic characteristics must first be found. In
thic research, the current and voltage characteristics of a FFET are described from empirical
data. The effective gilte capacitance and charge *are derived from experimental data on an
actual ferroelectric transistor. A general equation [I1for a MOSFET is used to derive the
internal characteristics of the transistor. Experimental data derived from a Radiant Technolo-
gies[" FFET is used to calculate the internal transistor characteri\tics using fundamental
MOSFET equations.
The drain current was measured under several different gate and drain voltages and with
different initial polarizations on the ferroelectric material. Two polarization conditions were
used. One with the gate ferroelectric material polarized wlth a +9.0 volt write pulse and one
with a -9.0 volt pulse. The transistor is also simulated using a mathematical model from ear-
lier research 13'. This model accurately predicts the I-V characteri\tic\ of the transiktor.

KrJworclF: femrelectric transistor: I-V characteristics

* Tel: (256)544-1324. Fax: (256)5 6 7 1 28. E-mail: todd.macleodG?msfc.nasa.gov

t Tel: (156)890-6168. Fax: (256)89&6803. E-mail: ho@ece.oah.edu

[1461]/21
224 14621 TODD C. MACLEOD and FAT DUEN HO

INTRODUCTION
A ferroelectnc / oxide \emiconductor field effect triinsirlor wiis
cttaractenzed by Joe Ev;ins, Robert S u m , atid Ironartl Roycr 12' of
Radiant 'Technologies Incorporated. The transistor 1s a thin
ferroelectnc Film tt.ansistor with the ferroelectnc inaterial being Ixad
Zmonlurn 7'1tnnate(PZT) The semtconducior channel IS d 4n0-
Angrtroxti film of lncliurn Oxidc The metal intcrcorinectioiis WCIC
made o f Platinum.

EXPERIMENTAL DATA
The characterization of the drain current versus the source-diairi
voltage wa*, matie hy f7nt polanring the PLY rxtalenal with either
negative 9.0 volt pul\e or a pa+itive 9.0 volt puire. 'The -9.0 volt pulw
polanres the PZT in such a way to increa\e the chmnel conductivity
and thc +9 0 volt pulre decreases the channel conductivity The gate
and drain to mirce voltages were Irriiited to 2 0 volts ;tb t o Inminim
the changez; ta thc PZT pol ion The data showed veiy iittle
hy\terehis indicating the t a t s did not \ignilicantIy affect the
polarinition. The ferts measured the following data \hewn 111 Figure 1

Figure I . Measure Drain Current

 I-V CHARACTERlSTlCS OF A FERROELECTRIC FET [ 1463]/23

DATA ANALYSIS
The experimental data m,easured by Radiant technologies was used to
"'
perform the data analysis. The general equation for a MOSFET is
used to derive the internal characteristics of the transistor:

Where
Id is the drain current
pnis the electron mobility
W is the channel width
L is the channel length
Coxis the effective oxide capacatence
V, is the gate voltage
V F is~ the flatbandl voltage
+p is the semiconductor potential
VD is the drain voltage
is the pennativity of the semiconductor
q is the electron charge
N:, is the charge acceptor density

This equation is modified slightly to describe the FFET characteristics.

A database was created with all the parameters of the general

MOSFET equation. Most of the parameters are constants for a given
transistor, but three parameters need to be calculated for each set of
conditions. These parameters are the effective ferroelectric
capacitance, the flat band voltage, and the surface charge at the
channel. The following equations were used to calculate these
parameters.

0
G =- (3)
X/
24/[ 14641 TODD C. MACLEOD and FAT DUEN HO

The experimental data was used to calculatc these parmictcrs

empirically. These parameters describe what is happening within the
[ransistor from a ftrndamental physics standpoint.

The empirical data was placed in a spreadsheet and reasonable vatiies

were entered for the equation parameters. An iterative process of
optimizing data t o find the effective capacitance and then using those
numbers to optimize for the flatband voltage was employed. After
several iterations, the best solution for equation that agreed with the
empirical data was determined.

The effective capacitance that was determined from thc empirical data
is shown in Figure 2.

Figure 2. Effective Capacitance

The flatband voltage determined from the empirical data is shown in

Figure 3. 11 is not possible to determine the charge profile from these
equations but the effect ot’the charge in the transistor is bundled inro
the flatband voltage.
 I-V CHARACTERISTICS OF A FERROELECTRIC FET 1l465)12.5

Figure 3. Flatband Voltage

The parameters in the equation match quite well with the measured
data, except for the 0.0 volt drain to source voltage. The cquafion does
not take into account leakage current, which is significant in this
transistor. Figure 4. shows ihe difference between the measured drain
currenl data and thc drain current predicted by the equation.

Figure 4. Difference between Measured Data and MOSFET Equation

The measured data is also used to generatc ;i rnodel to predict drain

current using a previously developed model ”’I. This model uses the
equation:
26/[1466] TODD C. MACLEOD and FAT DUEN HO

This model accurately predicts the drain current for different gate
voltages, source to drain voltages, and variations In polarization of the
ftrroelectric material. Figure 5 . depicts the output of this model.

Figure 5. Model of Drain Current

CONCLUSION
Empirical data of a ferroelectric PZT transistor can be used to
determine some of the fiindamental characteristics within the FFET
transistor. These parameters can not be measured directly from the
operating transistor without altering its operation. instead, an iterativc
process of taking the empirical data and processing it through a general
MOSFET equation ‘ I ’ to determine the effective capacitance and the
flatband voltage is effective. This process yielded paramelers of the
transistor h a t can not normally be measured directly from an operating
transistor.

Referenees
[I] R. Muller and T. Kamins, “Device Electronics for Integrated Circuits, Second Edition”,
John Wiley and Sons Inc., 1986.
[2] .I.Evans, R. Suizu, and L. Boyer, “Functionality of the Ferroelectric/Oxide Semicon-
ductor Interface”, Applied Surface Science 117/118. 1997.
[3] T.C. MacLeod, F.D. Ho, “Modeling of Metal-Ferroelectric-Semiconductor Field Effect
Transistors”, ISIF98 Proceedings, 1998.
[41 L. Glasser, D. Dobberpuhl, “The Design and Analysis of VLSI Circuits”, Addi-
son-Wesley Publishing, 1985.