MOS Transistor Symbol

Gate terminal
Metal layer / Poly

Dielectric/ Oxide layer

Inversion layer / Channel

Semiconductor / Substrate / Body

Substrate / Body
VGS (Gate to Isolated MOSFET terminal
Substrate /
Source voltage)
 N(Channel)MOSFET

n+ n+

P type Substrate n+ n+

P type Substrate

If Source and
Substrate Channel is
potentials are created by Vgs
same, then
required n+ n+ MOSFET is a
threshold voltage majority carrier-
become less device.
In NMOS, the majority charge
carrier is electrons, which should
move from Source to Drain.
P(Channel)MOSFET

p+
p+
 Current Equation (Ids) @ Linear region
dQ Q
I  Where "Q "is QChannel
dt t
Qchannel  C gate V
A WL
C gate     ox
D tox
V Vgc  Vt
Vgc isVoltage betweenGate and Channel
One sideof Channel has lowerPotential(nearSource)
and Another side (near Drain) has higher potential.
So, we haveto find averagevoltageof channel Qchannel
Vgs  Vgd Vgs  Vsd  Vgs Vds
Vgc   Vgs 
2 2 2
Vds
V  Vgs   Vt Qchannel  (  ox
WL
)*(Vgs 
Vds
 Vt )
2 tox 2
 Current Equation (Ids) @ Linear region
L
t
v
dis tan ce
Velocity  where " L "is Channel length
time
" v "isVelocity of ch arg e carrier
Vds
v E
L L2
where "  "is mobility of electron t
 Vds
" E "is electric field int ensity
Qchannel
WL Vds
Qchannel  (  ox )*(Vgs   Vt )
tox 2
 ox W Vds
I  ( )*(Vgs   Vt )Vds
tox L 2
 Current Equation (Ids)
 ox W Vds
I  ( )*(Vgs   Vt )Vds for SaturationCurrent :
tox L 2 Subtitute V  V  V
ds gs t
W Vds (Vgs  Vt )
I   Cox ( )*(Vgs 
2
 Vt )Vds 1 W
L 2 I  k ( )*
L 2
W Vds 
I  k ( )*(Vgs 
1
 Vt )Vds I (Vgs  Vt )2
L 2 2
W
where   k 1
L
nMOS I-V Summary
 first order transistor models


 0 Vgs  Vt cutoff

  Vds V V  V
I ds    Vgs  Vt   ds linear
 2 
ds dsat

 
Vgs  Vt 
2
 Vds  Vdsat saturation
2
pMOS I-V Summary
 first order transistor models


 0 Vgs  Vt cutoff

  V V V  V
I ds    Vgs  Vt  ds  ds linear
 2 
ds dsat

 
Vgs  Vt 
2
 Vds  Vdsat saturation
2
 Questions
Find out the region of the mos transistor?

Cut-off Deep linear / closer to

saturation

It is a wrong More/highly
representation saturated

VGS=2.5V, VDS=2.3V,
VT = 0.7V and VSB=0V
Saturation: