IRFZ44V 60A 60V N CHANNEL POWER MOSFET

APPLICATION FEATURES
‹ DC motor control ‹ Low ON Resistance
‹ UPS ‹ Low Gate Charge
‹ Class D Amplifier ‹ Peak Current vs Pulse Width Curve
‹ Inductive Switching Curves
VDSS RDS(ON) ID
60V 16.5mȍ 60A
PIN CONFIGURATION SYMBOL
TO-220
Front View D

G
DS S
N-Channel MOSFET
ʳ
DIMENSION IN MM
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Drain to Source Voltage (Note 1) VDSS 60 V
Drain to Current Ё Continuous Tc = 25к, VGS@10V ID 60 A
Ё Continuous Tc = 100к, VGS@10V ID 43
Ё Pulsed Tc = 25к, VGS@10V (Note 2) IDM 241
Gate-to-Source Voltage Ё Continue VGS ±20 V
Total Power Dissipation PD 150 W
Derating Factor above 25к 1.0 W/к
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, TSTG -55 to 175 к
Single Pulse Avalanche Energy L=144µH,ID=40 Amps EAS 500 mJ
Maximum Lead Temperature for Soldering Purposes TL 300 к
Maximum Package Body for 10 seconds TPKG 260 к
Pulsed Avalanche Rating IAS 60 A

THERMAL RESISTANCE
Symbol Parameter Min Typ Max Units Test Conditions
RșJC Junction-to-case 1.0 к/W Water cooled heatsink, PD adjusted for a peak junction
temperature of +175к
RșJA Junction-to-ambient 62 к/W 1 cubic foot chamber, free air
 IRFZ44V 60A 60V N CHANNEL POWER MOSFET

ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.

cIRFZ44V
Characteristic Symbol Min Typ Max Units
OFF Characteristics
Drain-to-Source Breakdown Voltage VDSS 60 V
(VGS = 0 V, ID = 250 µA)
Breakdown Voltage Temperature Coefficient ӔVDSS/ǻTJ 0.069 mV/к
(Reference to 25к, ID = 250 µA)
Drain-to-Source Leakage Current IDSS µA
(VDS = 60 V, VGS = 0 V, TJ = 25к) 25
(VDS = 48 V, VGS = 0 V, TJ = 150к) 250
Gate-to-Source Forward Leakage IGSS 100 nA
(VGS = 20 V)
Gate-to-Source Reverse Leakage IGSS -100 nA
(VGS = -20 V)
ON Characteristics
Gate Threshold Voltage VGS(th) 1.0 2.0 3.0 V
(VDS = VGS, ID = 250 µA)
Static Drain-to-Source On-Resistance (Note 4) RDS(on) mȍ
(VGS = 10 V, ID = 60A) 16.5
Forward Transconductance (VDS = 15 V, ID = 60A) (Note 4) gFS 36 S
Dynamic Characteristics
Input Capacitance Ciss 1430 pF
(VDS = 25 V, VGS = 0 V,
Output Capacitance Coss 420 pF
f = 1.0 MHz)
Reverse Transfer Capacitance Crss 88 pF
Total Gate Charge (VGS = 10 V) (VDS = 30 V, ID = 60 A, Qg 37.7 nC
Gate-to-Source Charge VGS = 10 V) (Note 5) Qgs 8.4 nC
Gate-to-Drain (“Miller”) Charge Qgd 9.8 nC
Resistive Switching Characteristics
Turn-On Delay Time td(on) 12.1 ns
(VDD = 30 V, ID = 60 A, ns
Rise Time trise 64
VGS = 10 V,
Turn-Off Delay Time td(off) 69 ns
RG = 9.1ȍ) (Note 5)
Fall Time tfall 39 ns
Source-Drain Diode Characteristics
Continuous Source Current IS 60 A
(Body Diode) Integral pn-diode in MOSFET
Pulse Source Current (Body Diode) ISM 241 A
Diode Forward On-Voltage (IS = 60 A, VGS = 0 V) VSD 1.5 V
Reverse Recovery Time (IF = 60A, VGS = 0 V, trr 55 ns
Reverse Recovery Charge di/dt = 100A/µs) Qrr 110 nC
 IRFZ44V 60A 60V N CHANNEL POWER MOSFET

Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case

Duty Cycle
1.000 50%

20%
Thermal Impedance

10%
0.100 5%
ZTJC,

2% PDM

1% t1
0.010 t2
single pulse
NOTES:
DUTY FACTOR: D=t1/t2
PEAK TJ=PDM x ZTJC x RTJC+TC
0.001

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

tp, Rectangular Pulse Duration (s)

Figure 2. Maximum Power Dissipation Figure 3. Maximum Continuous Drain Current

vs Case Temperature vs Case Temperature
70
140
PD, Power Dissipation (W)

60
120
ID, Drain Current (A)

50
100
40
80
60 30
40 20
20 10
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175

TC, Case Temperature (oC) TC, Case Temperature (oC)

Figure 4. Typical Output Characteristics Figure 5. Typical Drain-to-Source ON Resistance

vs Gate Voltage and Drain Current
50
PULSE DURATION = 250 µS
200 DUTY CYCLE = 0.5% MAX
TC = 25 oC 45
180 VGS = 15V
RDS(ON), Drain-to-Source

VGS = 10V
160
ID, Drain Current (A)

40
ON Resistance (m:

ID = 14A
VGS = 8V ID = 28A
140
ID = 55 A
35
120 VGS = 6V
100
VGS = 5V 30
80 VGS = 4.5V
25 PULSE DURATION = 250 µS
60 DUTY CYCLE = 0.5% MAX
VGS = 4V
o
TC = 25 C
40 VGS = 3.5V 20
20
15
0
0 5 10 3 4 5 6 7 8 9 10

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

 IRFZ44V 60A 60V N CHANNEL POWER MOSFET

Figure 6. Maximum Peak Current Capability

10000
FOR TEMPERATURES
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN ABOVE 25 oC DERATE PEAK
IDM, Peak Current (A)

THIS REGION CURRENT AS FOLLOWS:

1000
150 – T C
I = I 25 ----------------------
125
100

10

VGS = 10V
1

1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 10E+0

tp, Pulse Width (s)

Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability

40 1000
ID, Drain-to-Source Current (A)

PULSE DURATION = 250 µs If Rz 0: tAV= (L/R) ln[(IAS×R)/(1.3BVDSS-VDD)+1]

IAS, Avalanche Current (A)

35 DUTY CYCLE = 0.5% MAX If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)

VDS = 10 V R equals total Series resistance of Drain circuit
30
100
25
20 STARTING TJ = 25 oC
15 STARTING TJ = 150 oC
+175 oC 10
10 +25oC
-55oC
5
0 1
1.5 2.0 2.5 3.0 3.5 4.0 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3

VGS, Gate-to-Source Voltage (V) tAV, Time in Avalanche (s)

Figure 9. Typical Drain-to-Source ON Resistance Figure 10. Typical Drain-to-Source ON Resistance

vs Drain Current vs Junction Temperature
Drain-to-Source ON Resistance (m:)

2.5
RDS(ON), Drain-to-Source
Resistance (Normalized)

2.0
RDS(ON),

1.5

1.0.
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
VGS=10V VGS = 10V, ID = 15A
10 0.5
0 50 100 150 200 250 -75 -50 -25 0 25 50 75 100 125 150
ID, Drain Current (A) TJ, Junction Temperature (oC)
 IRFZ44V 60A 60V N CHANNEL POWER MOSFET

Figure 11. Typical Breakdown Voltage vs Figure 12. Typical Threshold Voltage vs
Junction Temperature Junction Temperature
Breakdown Voltage (Normalized)

1.20 1.2

VGS(TH), Threshold Voltage

BVDSS, Drain-to-Source

1.15 1.1

1.0

(Normalized)
1.10
0.9
1.05
0.8
1.00
0.7
0.95 VGS = 0V 0.6 VGS = VDS
ID = 250 µA ID = 250 µA
0.90 0.5
-75 -50 -25 0.0 25 50 75 100 125 150 175 -75 -50 -25 0.0 25 50 75 100 125 150 175
TJ, Junction Temperature (oC) TJ, Junction Temperature (oC)

Figure 14. Typical Capacitance

vs Drain-to-Source Voltage
1000 3000
OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON)
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd
2500
ID, Drain Current (A)

C, Capacitance (pF)

10µs Ciss Coss # Cds + Cgd

Crss = Cgd
100 2000
100µ
1500
Coss
1.0m
10 1000

10ms
500
TJ = MAX RATED, TC = 25 oC Crss
Single Pulse DC
1 0
1 10 100 0.01 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain Voltage (V)

Figure 15. Typical Gate Charge Figure 16. Typical Body Diode Transfer
vs Gate-to-Source Voltage Characteristics
VGS, Gate-to-Source Voltage (V)

12
ISD, Reverse Drain Current (A)

10
VDS=45V
8 VDS=30V
150 oC
VDS=15V 100
6 25 oC
80
-55 oC
4 60
40
2
20
ID = 59A VGS = 0V
0 0
0 5 10 15 20 25 30 35 40 0.3 0.5 0.7 0.9 1.1 1.3
QG , Total Gate Charge (nC) VSD, Source-to-Drain Voltage (V)