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APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
THERMAL DATA
o
R thj -case Thermal Resistance Junction-case Max 0.78 C/W
o
R thj -amb Thermal Resistance Junction-ambient Max 30 C/W
o
R thc-sink Thermal Resistance Case-sink Typ 0.1 C/W
o
Tl Maximum Lead Temperature F or Soldering Purpose 300 C
AVALANCHE CHARACTERISTICS
Symbo l Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 6.5 A
(pulse width limited by Tj max)
E AS Single Pulse Avalanche Energy 260 mJ
(starting Tj = 25 o C, ID = IAR , V DD = 50 V)
ON (∗)
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA 3 4 5 V
R DS(on) Static Drain-source On V GS = 10 V ID = 3 A 1.6 1.9 Ω
Resistance Ω
I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x 6.5 A
V GS = 10 V
DYNAMIC
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
g f s (∗) Forward V DS > ID(o n) x R DS(on )ma x ID = 3 A 2.5 4.7 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz V GS = 0 1250 pF
C os s Output Capacitance 145 pF
C rss Reverse Transfer 16 pF
Capacitance
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STW7NB80
SWITCHING OFF
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
tr (Voff) Off-voltage Rise T ime V DD = 640 V I D = 6 A 11 ns
tf Fall T ime R G = 4.7 Ω VGS = 10 V 9 ns
tc Cross-over Time 16 ns
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge test Circuit
Resistive Load
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STW7NB80
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
P025P
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STW7NB80
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