Frequency Response

Lesson #12
Small Signal Equivalent Circuits for
the BJT
Section 8.4-8.8
BME 373 Electronics II – 22
J.Schesser
 Frequency Response
• The gain of an amplifier is affected by the capacitance associated with its circuit. This
capacitance reduces the gain in both the low and high frequency ranges of operation.
• The Bode Plot may look something like this where there is a low frequency band, a
midfrequency band and a high frequency band.
• The reduction of gain in the low
frequency band is due to the coupling
and bypass capacitors selected. They
are essentially short circuits in the
mid and high bands.
• The reduction of gain in the high
frequency band is due to the internal Mid-Frequency Band
capacitance of the amplifying device,
e.g., BJT, FET, etc.. This capacitance
is represented by capacitors in the
small signal equivalent circuit for
these devices. They are essentially
open circuits in the low and mid Low Frequency Band High Frequency Band
bands.
• First, let’s continue to study the small
signal equivalent circuits.
BME 373 Electronics II – 23
J.Schesser
 Small Signal Equivalent Circuits and Parameters for the BJT
rπ-β Model

• When the AC Portion of the input is small around the Q point (<<VT in
value) then we can approximate the operation of transistor by an
equivalent circuit consisting of a resistor, rπ=VT/IBQ and a current
source, βib, where ib is the small signal component of the base current:
o o
C
B rπ βib

o
E
• A more thorough Equivalent Circuit may be needed to specify the
performance of the BJT

BME 373 Electronics II – 24

J.Schesser
 Two-Port Devices and the Hybrid Model

• Generalized model for two-port devices

i1 i2
+ +
Two-port v2 v1  h11i1  h12 v2
v1 Device
- - i2  h21i1  h22 v2
v1
11  input relationship; h11   input resistance with output shorted-circuited
i1 v2  0

i2
22  output relationship; h22   output conductance with input open-circuited
v2 i1  0

i2
21  forward transfer relationship; h21   forward current transfer (or gain) with output short-circuited
i1 v2  0

(short-ciruit current gain)

v1
12  reverse transfer relationship; h12   reverse voltage transfer (or gain) with input open-circuited
v2 i1  0

(reverse-open-circuit voltage gain)

BME 373 Electronics II – 25
J.Schesser
 Hybrid-Parameter Model for the Common
Emitter BJT
ib ic
B C
+ hie +
+
hfeib vbe  hieib  hre vce
vbe hoe vce
hrevce
-
ic  h feib  hoe vce
- -
E
E

The parameters defined by this equivalent circuit as

usually provided by transistor manufacturers to describe
the performance of the BJT. For example,  and hfe are
typically given in BJT data sheets.

BME 373 Electronics II – 26

J.Schesser
 Hybrid-π Model for the BJT

• Another model typically specified by BJT

manufacturers and is used for frequency analysis
• Includes
– Resistance to model the base-emitter junction, the base
to collector junction, and the collector to emitter path
– Capacitance to model base-emitter junction and the
base to collector junction
– A dependent (forward) current source in the collector

BME 373 Electronics II – 27

J.Schesser
 Hybrid-π Model for the BJT (Continued)
Cμ
rx
B C
+
rπ rμ
vπ ro
Cπ gmvπ
E - E
• rx called the base spreading resistance and represents the resistance of the base-emitter junction
• rπ represents the dynamic resistance for small signal analysis and depends on the Q-point of the
design - rπ=VT/IBQ
• rμ represents the feedback from the collector to the base and is related to the hybrid parameter
hre= rπ /(rπ+ rμ)
• ro represents the resistance from the collector to the emitter and is related to the hybrid parameter
hoe ≈ 1/ ro and is also related to the EARLY Voltage by VA/ICQ
• Cμ is the depletion capacitance of the collector-base junction
• Cπ is the capacitance of the base-emitter junction and depends on the Q-point
• gmvπ is the amplification factor and is equal to β ib.
• Transition frequency, ft = β /[2πrπ(Cμ+Cπ)], when |Ic/Ib| is unity when the collector is grounded
for ac. BME 373 Electronics II – 28
J.Schesser
 Example
I CQ 10m
• The Hybrid-π parameters of a gm    0.385 S,
VT 26m
2N2222A: 
r   225  585 ,
– Q-point => ICQ=10 mA, VCEQ= 10V g m .385
– Assume VT = 26 mV r
r    585 -4  1.5 M,
– Average β => 225 hre 4  10

– hre => 4x10-4 ro  1  5 k ~ 40 k 

hoe
– hoe => 25 mS ~ 200 mS ro AVG  22.5 k,
– Cμ => 8 pF  225
C   C   8pF
– ft => 300 MHz (transition frequency) 2  r f
 t 2  585  300 10 6

– Collector-base time constant:  196 pF

12 12
rxCμ=150 x 10-12 rx  150  10  150  10  19 
C 8

ft 
2 r (C  C ) BME 373 Electronics II – 29
J.Schesser
 Analysis of CE at High Frequencies
VCC 15V
The Hybrid-π parameters :
RC
– Q-point => ICQ=10 mA, VCEQ= 10V
510
– Assume VT = 26 mV
C2

1uF + – gm=.385 S
C1
Q1
LR – rx=19 Ω
1uF Q2N2222A
vout
+
510

– rπ=585 Ω
Rs 0
-
50
vn
RB
10k
– ro=22.5k Ω
+-
Vs
RE
CE
– rμ=1.5 M Ω
1V
- 1.3k
100uF
– Cπ=196pF
– Cμ=8pF
0 0 0
VEE –15V

Cμ
RS B rx
+ C
+
rπ rμ
vs
vin RB vπ ro RC RL
Cπ gmvπ
- - E
E BME 373 Electronics II – 30
J.Schesser
 Example Using the Miller Effect
8p
50 B 19
+ + C +
585 1.5 M
510
vs
vin 10k
vπ 22.5k 510
vo
196p .385vπ
- - E -
r in Miller r out Miller
C in Miller C out Miller
50 B 19 C
+ .385vπ +
+ 585
510
vs
vin 10k
vπ 22.5k 510 vo
196p
- - -
E
BME 373 Electronics II – 31
J.Schesser
 Example Calculation of the Miller Parameters
and the Midband Gain
50 B 19 C
+ .385vμ
+ 585
510
vs
vin 10k
vπ r in Miller
22.5k 510
r out Miller
- -
E
R’s=[10k||(19+rπ||rμINMILLER)]=550 R’L=22.5k||510||510||rμOUTMILLER=252

Miler Effect Parameters

Calculations
rμout MILLER=1.5M*Av /(Av-1) ≈ 1.5M
rπ||rμin MILLER = 563
Av= vo /vπ=-gmR’L=-.385*252=-97
vπ /vin =rπ||rμin MILLER / ((rπ||rμin MILLER)+rx) =.97
rμin MILLER=1.5M/(1-Av )=1.5M/(1+gmR’L ) ≈ 15.k
vin/vs=R’s/(R’s+50)=0.92
Avs= vo/vs= (vo /vπ)(vπ /vin) (vin /vs)=-97(.92)(.97)=-86.1

BME 373 Electronics II – 32

J.Schesser
 Example Calculation of the Break Frequencies
r out Miller
r in Miller
C out Miller
C in Miller
50 B 19 C
+ .385vπ
+ 585
510
vs
vin 10k
vπ 22.5k 510
196p
- -
E
R’s=[(50||10k)+19]||585||rμINMILLER=61.3 R’L=22.5k||510||510||rμOUTMILLER=252

Miler Effect Parameters

Calculations
rμin MILLER=15.k
CT=196+CμinMiller= 980 pF
rμout MILLER= 1.5M
fb in=1/(2πR’sCT)=1/(2π*61.3*980x10-12)=2.65 MHz
Cμin MILLER=8p*(1-Av ) ≈ 784 pF
fb out=1/(2πR’LCμout Miller)=1/(2π*252*8.08x10-12)=78.1 MHz
Cμout MILLER=8p*(Av-1) /Av ≈ 8.08 pF

BME 373 Electronics II – 33

J.Schesser
 Example Alternative Method Using Circuit
Analysis - Output Circuit
50 B 19 B’
+ + C +
vs
vin v
10k π
vo
.385vπ
- - E -
RB’=rμINMILLER|| rπ = 15k||585 CT=Cμinmiller +Cgs R’L=252 Cμoutmiller=8p
=784p+196p=980pf
=563
Output Pole Frequency
1
252 
vo j 8 1012
 g m R' L || ZC  .385
v outmiller 1
252 
j 8 10 12
252 252
 .385  .385
1 j 8 1012  252 1 j 2.03 109
1
f bout   78.1MHz
2 2.03 10 9
BME 373 Electronics II – 34
J.Schesser
 Example Alternative Method Using Circuit Analysis - Input Circuit
50 B 19 B’
+ + C +
vs
vin v
10k π
vo
.385vπ
- - E -
RB’=rμINMILLER|| rπ = 15k||585=563 CT=Cμinmiller +Cgs R’L=252 Cμoutmiller=8p
Input Pole Frequency =784p+196p=980pf
v v vB Input Pole Frequency
 
vS vB vs vB RB || (rx  RB ' || Z CT )

vs RB || ( rx  RB ' || Z CT )  RS
v RB ' || Z CT

vB RB ' || Z CT  rx
RB ' r (1  jCT RB ' )  RB ' rx  RB '  jCT RB ' rx
1 (rx  RB ' || Z CT )  rx   x 
RB '  1  jCT RB ' 1  jCT RB ' 1  jCT RB '
jCT RB '
RB ' || Z CT   rx  RB '  jCT RB ' rx
1 1  jCT RB ' RB 
RB '  r  RB '  jCT RB ' rx 1  jCT RB '
jCT RB || (rx  RB ' || Z CT )  RB || x 
1  jCT RB ' r  RB '  jCT RB ' rx
RB ' RB  x
1  jCT RB '
v 1  jCT RB ' RB '
  RB ' rx
vB RB '
 rx rx (1  jCT RB ' )  RB ' RB (rx  RB ' )(1  jCT )
1  jCT RB ' RB  (rx  RB '  jCT RB ' rx ) (rx  RB ' )
 
RB (1  jCT RB ' )  (rx  RB '  jCT RB ' rx ) RB  rx  RB '  jCT ( RB ' RB  RB ' rx )
RB ' RB ' 1
 
rx  RB '  jCT RB ' rx rx  RB ' 1  jC RB ' rx BME 373 Electronics II –
T
rx  RB ' 35
J.Schesser
 CT=Cμinmiller +Cgs
=784p+196p=980pf Example Input Circuit Cont’d
R’L=252
50 B 19 B’
+ + C +
vs
10k
vin vπ .385vπ vo
- E
- -
Cμoutmiller=8p

RB’=rμINMILLER|| rπ = 15k||585=563
RB ' rx
RB (rx  RB ' )(1  jCT )
(rx  RB ' )
vB RB || (rx  RB ' || Z CT ) RB  rx  RB '  jCT ( RB ' RB  RB ' rx )
 
vs RB || (rx  RB ' || Z CT )  RS RB ' rx
RB (rx  RB ' )(1  jCT )
(rx  RB ' )
 RS
RB  rx  RB '  jCT ( RB ' RB  RB ' rx )
RB ' rx RB ' rx
RB (rx  RB ' )(1  jCT ) RB (rx  RB ' )(1  jCT )
(rx  RB ' ) (rx  RB ' )
 
)  RS ( RB  rx  RB '  jCT ( RB ' RB  RB ' rx )) RB (rx  RB ' )  jCT RB ' rx RB )  RS ( RB  rx  RB '  jCT ( RB ' RB  RB ' rx ))
RB ' rx
RB (rx  RB ' )(1  jCT
(rx  RB ' )
RB ' rx
RB (rx  RB ' )(1  jCT )
(rx  RB ' )

RB (rx  RB ' )  RS ( RB  rx  RB ' )  jCT ( RB ' rx RB  RS ( RB ' RB  RB ' rx ))

BME 373 Electronics II – 36

J.Schesser
 Example Input Circuit Cont’d

50 B 19 B’
+ + C +
vs
vin v
10k π
vo
.385vπ
- - E -
RB’=rμINMILLER|| rπ = 15k||585 CT=Cμinmiller +Cgs R’L=252 Cμoutmiller=8p
=784p+196p=980pf
=563 Input Pole Frequency
RB ' rx
RB (rx  RB ' )(1  jCT )
v v vB RB ' 1 (rx  RB ' )
   
vS vB vs rx  RB ' 1  jC RB ' rx RB (rx  RB ' )  RS ( RB  rx  RB ' )  jCT ( RB ' rx RB  RS ( RB ' RB  RB ' rx ))
T
rx  RB '
RB RB '
RB ' RB RB rx  RB RB '  RS RB  RS rx  RS RB '
 
RB (rx  RB ' )  RS ( RB  rx  RB ' )  jCT ( RB ' rx RB  RS ( RB ' RB  RB ' rx )) 1  jC ( RB ' rx RB  RS RB ' RB  RB ' rx RS
T ))
RB rx  RB RB '  RS RB  RS rx  RS RB '
1
fbin   2.65MHz
2 6 108
BME 373 Electronics II – 37
J.Schesser
 Example Input Circuit using Thevenin’s
Theorem
50 B 19 B’
+ + C +
vs
vin v
10k π
vo
.385vπ
- - E -
RB’=rμINMILLER|| rπ = 15k||585 CT=Cμnmiller +Cgs R’L=252 Cμoutmiller=8p
=784p+196p=980pf
=563
Thevenin's method for Input Pole
RT  ( RS || RB  rx ) || RB '
RS RB R R r R r R
(  rx ) || RB '  ( S B x S x B ) || RB '
RS  RB RS  RB
RS RB  rx RS  rx RB
( ) RB '
RS  RB RS RB RB '  rx RS RB '  rx RB RB '
 
R R r R r R
( S B x S x B )  RB ' RS RB  rx RS  rx RB  RB ' RS  RB ' RB
RS  RB
1
fbin   2.65MHz
2 CT RT
BME 373 Electronics II – 38
J.Schesser
 Emitter Follower
Cμ
Rs B rx C
+ rπ rμ
vs ro
RB vπ
Cπ gmvπ
E
-
VCC 15 V
+
RE
RL vo
Rs C1 Q1
Q2N2222A
510 1uF C2 -
Vs RB 100uF
1V 10k
RE RL
1.3k 50

0 0
0
VEE –15 V

BME 373 Electronics II – 39

J.Schesser
 Emitter Follower (Continued)
Cμ
Rs B rx C
+ rπ rμ
vs ro
RB vπ
Cπ gmvπ
E
-
+
R’s=Rs||RB+rx => R’L=RL||RE||ro RE RL vo
Cπ
R’s b’ rπ E -
+
rμ + vπ -
v’s R’
vo
Cμ L
gmvπ
-
BME 373 Electronics II – C 40
J.Schesser
 Emitter Follower (Continued)
Cπ
R’s b’ rπ E
+
rμ + vπ - R’
v’s
L vo
Cμ gmvπ
-
C
Miller Effect Calculations for the Input
vo  g m R ' L v ∂
vb '  v∂  vo  (1  g m R' L )v∂
R’s b’ rπ(1+gmR’L) Cπ / (1+ gmR’L)
Vf v vb '
I fIN     rμ
Z f Z f Z f (1  g m R 'L ) v’s
Z in Miller  Z f (1  g m R'L ) Cμ

RT
BME 373 Electronics II – CT 41
J.Schesser
 Example
The Hybrid-π parameters :
– Q-point => IEQ=10.6 mA,
VCEQ= 15V Calculations:
– Assume VT = 26 mV
– β=225
– R’s=Rs||RB+rx= 510||10k+19=504
– gm=.385 S
– rx=19 Ω – R’L=RL||RE||ro= 50||1.3k||22.5k=48
– rπ=585 Ω – RT=R’S||rμ||rπ(1+gmR’L)=483
– ro=22.5k Ω – CT=Cμ+Cpπ /(1+gmR’L)= 18.1 pF
– rμ=1.5 M Ω – fb=1/(2πRTCT)=18.2 MHz
– Cπ=196pF
– Cμ=8pF
Recall for an emitter follower:
– Av=(β+1)R’L/[rπ+(β+1)R’L]=.949
The Circuit parameters :
– RS=510 – Rin=RB||[rπ+(β+1)R’L]= 5.33 kΩ
– RB=10 k – Avs=AvRin /(Rin+RS)= 8.66
– RE=1.3 k
– RL=50

BME 373 Electronics II – 42

J.Schesser
 Low Frequency Response of RC-Coupled
Amplifiers
• Coupling Capacitors
– To couple the various stages of a multi-stage amplifier
• For AC performance essentially a short circuit and AC current flows
from one stage to the next stage
– To support the biasing of each stage individually:
• For DC performance: open circuit and no biasing current flows from
one stage to another
• ByPass Capacitors
– To support the addition of a resistor for biasing purposes only
• For DC performance: open circuit and current flows through the
biasing resistor
– Short-circuit the biasing resistor for AC performance.
• For AC performance: short circuit and no current flows through the
resistor (shorted out/bypassed)
BME 373 Electronics II – 43
J.Schesser
 Capacitors
VCC 15V

RC
510

C2

1uF
+
C1
Q1
1uF Q2N2222A
RL
vout
+
510

-
Rs 0
50 vn RB
10k

+
-
Vs - RE
CE
1V 1.3k
100uF

0 0 0
VEE –15V

Bypass Capacitors
Coupling Capacitors

BME 373 Electronics II – 44

J.Schesser
 Coupling Capacitors
C1 C2
Rs Ro

+ + + +
VS -
VX Rin -
VY Vo RL
- -

Avs 
VO VX VY VO
  
VY=Avo VX
VS VS VX VY
VX Rin jC1 Rin
 
VS R  R  1 1  jC1 ( Rin  RS )
jC1
in S


Rin

j ( f / f1 )
,
20log|Avsmid|
Rin  RS 1  j ( f / f1 )
1
f1 
2 ( RS  Rin )C1
VO RL RL j( f / f2 )
   ,
VY R  R  1 RL  Ro 1  j ( f / f 2 )
jC2
L o

1
f2  ,
2 ( Ro  RL )C2
VX
 Avo ,
VS
Rin j ( f / f1 ) RL j( f / f2 )
Avs  
Rin  RS 1  j ( f / f1 )
j ( f / f1 )
 Avo  
RL  Ro 1  j ( f / f 2 )
j( f / f2 )
f2 f1
Avs  Avsmid  
1  j ( f / f1 ) 1  j ( f / f 2 )
Rin RL
Avsmid   Avo 
Rin  RS RL  Ro BME 373 Electronics II – 45
J.Schesser
 Bypass Capacitors

• The value of a bypass capacitor is chosen to

provide a short circuit at a frequency sufficiently
low than the band pass of amplifier design
• For a emitter follower, it can be shown
f1=1/(2π R’E CE )
where
R’E is the equivalent resistance reflected into the
emitter circuit

BME 373 Electronics II – 46

J.Schesser
 Homework

• Hybrid-
– Problems: 8.28,31
• Common Emitter
– Problems: 8.40-41
• Emitter Follower
– Problems: 8.56-7
• Low Frequency Response
– Problems: 8.60-2

BME 373 Electronics II – 60

J.Schesser