MDHT3N40 N-channel MOSFET 400V

MDHT3N40
N-Channel MOSFET 400V, 1.5A, 3.4Ω

General Description Features

The MDHT3N40 uses advanced Magnachip’s
VDS = 400V
MOSFET Technology, which provides low on-state
ID = 1.5A @VGS = 10V
resistance, high switching performance and
RDS(ON) ≤ 3.4Ω @VGS = 10V
excellent quality.

MDHT3N40 is suitable device for SMPS, HID and

general purpose applications. Applications

Power Supply

PFC

LED TV

S
D
G

SOT-223

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 400 V
Gate-Source Voltage VGSS ±30 V
o
TC=25 C 1.5 A
Continuous Drain Current o
ID
TC=100 C 0.9 A
(1)
Pulsed Drain Current IDM 6.0 A
o
TC=25 C 2.1 W
Power Dissipation o
PD o
Derate above 25 C 0.017 W/ C
(3)
Peak Diode Recovery dV/dt dV/dt 4.5 V/ns
(1)
Repetitive Pulse Avalanche Energy EAR 0.21 mJ
(1)
Avalanche current IAR 1.5 A
(4)
Single Pulse Avalanche Energy EAS 45 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics
Characteristics Symbol Rating Unit
(1) o
Thermal Resistance, Junction-to-Ambient RθJA 60 C/W

Jun 2012. Version 1.5 1 MagnaChip Semiconductor Ltd.

 MDHT3N40 N-channel MOSFET 400V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDHT3N40URH -55~150 C SOT-223 Reel and Tape Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 400 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0
Drain Cut-Off Current IDSS VDS = 400V, VGS = 0V - - 1 µA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 0.75A 2.8 3.4 Ω
Forward Transconductance gfs VDS = 30V, ID = 0.75A - 2.0 - S
Dynamic Characteristics
Total Gate Charge Qg - 5.1 -
VDS = 320V, ID = 3.0A,
Gate-Source Charge Qgs - 1.4 - nC
VGS = 10V
Gate-Drain Charge Qgd - 3.9 -
Input Capacitance Ciss - 167 -
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 2 - pF
Output Capacitance Coss - 27 -
Turn-On Delay Time td(on) - 10 -
Rise Time tr VGS = 10V, VDS = 200V, ID = 3.0A, - 30 -
ns
Turn-Off Delay Time td(off) RG = 25Ω - 12 -
Fall Time tf - 25 -
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
IS 1.5 A
Diode Forward Current
Source-Drain Diode Forward Voltage VSD IS = 1.5A, VGS = 0V - 1.4 V
Body Diode Reverse Recovery Time trr (3)
- 185 - ns
IF = 3.0A, di/dt = 100A/µs
Body Diode Reverse Recovery Charge Qrr - 0.6 - µC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤3.0A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25°C
4. L=8.75mH, IAS=3.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C

Jun 2012. Version 1.5 2 MagnaChip Semiconductor Ltd.

 MDHT3N40 N-channel MOSFET 400V
4 6
Vgs=5.5V
=6.0V Notes
=6.5V 1. 250㎲ Pulse Test
=7.0V 2. TC=25℃
3 =8.0V
ID,Drain Current [A]

=10.0V 5
=15.0V

RDS(ON) [Ω ]
2
VGS=10.0V

4
VGS=20V
1

3
5 10 15 20 1 2 3 4

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

3.0 1.2

※ Notes : ※ Notes :

2.5
1. VGS = 10 V Drain-Source Breakdown Voltage 1. VGS = 0 V
2. ID = 0.75 A 2. ID = 250㎂
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

2.0

1.5 1.0

1.0

0.9

0.5

0.0 0.8
-50 0 50 100 150 200 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

10

* Notes ;
10
1. VDS=30V
※ Notes :
Reverse Drain Current [A]

1. VGS = 0 V
2. 250µs Pulse Test
ID [A]

IDR

150℃ 25℃
1

150℃

25℃

1 0.1
4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Jun 2012. Version 1.5 3 MagnaChip Semiconductor Ltd.

 MDHT3N40 N-channel MOSFET 400V
300
Ciss = Cgs + Cgd (Cds = shorted)
10 C oss Coss = Cds + Cgd
※ Note : ID = 3A
80V Crss = Cgd
200V
VGS, Gate-Source Voltage [V]

8 320V

200

Capacitance [pF]
6 C iss

4
※ Notes ;
100
1. VGS = 0 V
C rss 2. f = 1 MHz
2

0
0
0 2 4 6 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

Operation in This Area 2.0

is Limited by R DS(on)

1
10

100 µs 1.5
ID, Drain Current [A]

1 ms
ID, Drain Current [A]

10 ms
0
10 100 ms
10s 1s 1.0

DC

-1
10
0.5
Single Pulse
TJ=Max rated
TC=25℃

-2
10 0.0
-1 0 1 2
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

D=0.5 single Pulse

0.2
4000
10
1 TC = 25℃
0.1
0.05
Thermal Response

Power (W)

0.02
Zθ JC(t),

0
10
0.01
2000

-1
single pulse
10 ※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JA=60℃/W

10
-2 0
10
-5
10
-4
10
-3 -2
10 10
-1
10
0
10
1
10
2 3
10 1E-5 1E-4 1E-3 0.01 0.1 1 10
t1, Rectangular Pulse Duration [sec] Pulse Width (s)

Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power
Dissipation

Jun 2012. Version 1.5 4 MagnaChip Semiconductor Ltd.

 MDHT3N40 N-channel MOSFET 400V
Physical Dimension

SOT-223
Dimensions are in millimeters, unless otherwise specified

Jun 2012. Version 1.5 5 MagnaChip Semiconductor Ltd.

 MDHT3N40 N-channel MOSFET 400V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Jun 2012. Version 1.5 6 MagnaChip Semiconductor Ltd.