F20C20D thru F20C60D

F20C20D/F20C30D/F20C40D/F20C50D/F20C60D Pb
Pb Free Plating Product
20Ampere Heat Sink Dual Doubler Polarity Fast Recovery Half Rectifiers

TO-220AB Unit : inch (mm)

Features
.419(10.66)
 Fast switching for high efficiency
.196(5.00)
.387(9.85) .163(4.16)

 Low forward voltage drop .139(3.55)

MIN
.054(1.39)
.045(1.15)
 High current capability

.269(6.85)
.226(5.75)
 Low reverse leakage current

.624(15.87)
.548(13.93)
 High surge current capability
Application
 Automotive Inverters and Solar Inverters
 Plating Power Supply,SMPS and UPS
 Car Audio Amplifiers and Sound Device Systems

.50(12.7)MIN
.177(4.5)MAX
.038(0.96) .025(0.65)MAX

Mechanical Data
.019(0.50)

 Case: Heatsink TO-220AB open metal package

 Epoxy: UL 94V-0 rate flame retardant
.1(2.54) .1(2.54)

 Terminals: Solderable per MIL-STD-202

method 208
Case Case Case Case
 Polarity: As marked on diode body
 Mounting position: Any Positive Negative Doubler Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
 Weight: 2.2 gram approximately Suffix "C" Suffix "A" Suffix "D" Suffix "S"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

F20C30D F20C50D
SYMBOL F20C20D UNIT
F20C40D F20C60D
Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V

Maximum RMS Voltage VRMS 140 280 420 V

Maximum DC Blocking Voltage VDC 200 400 600 V

Maximum Average Forward Rectified

IF(AV) 20.0 A
Current TC=125 ℃ (Total Device 2x10A=20A)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM 200 A
(JEDEC method)

Maximum Instantaneous Forward Voltage

VF 0.98 1.3 1.7 V
@ 10.0 A (Per Diode/Per Leg)

Maximum DC Reverse Current @TJ=25 ℃ 5.0 μA

IR
At Rated DC Blocking Voltage @TJ=125℃ 100 μA

Maximum Reverse Recovery Time (Note 1) Trr 35 nS

Typical junction Capacitance (Note 2) CJ 120 70 pF

Typical Thermal Resistance (Note 3) R JC 2.0 ℃/W
Operating Junction and Storage -55 to + 150
TJ, TSTG ℃
Temperature Range

NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.

Rev.09T Page 1/2

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/

 F20C20D thru F20C60D

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

20 200
Pulse Width 8.3ms

PEAK FORWARD SURGE CURRENT,

Single Half-Sire-Wave
AVERAGE FORWARD RECTIFIED

175 (JEDEC Method)

16
CURRENT, AMPERES

150
10
125

AMPERES
8 100

75
6

50
4
60 Hz Resistive or 25
Inductive load
0 0
0 50 100 150 1 10 100

o NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE, C

FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS
100 1000
IINSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS REVERSE CURRENT,

F20C20D
o
F20C30D/F20C40D TJ=125 C
100
MICROAMPERES

10
AMPERES

10

o
TJ=25 C
0.1 F20C50D/F20C60D
1

TJ=25 oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100

INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF RATED PEAK REVERSE VOLTAGE,%

VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000 o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE, pF

100

10
0.1 1.0 4.0 10 100

REVERSE VOLTAGE, VOLTS

Rev.09T Page 2/2

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/