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RoHS-compliant Product
Advanced Power N AND P-CHANNEL ENHANCEMENT
Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 ℃/W
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.8A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=8A, VGS=0V, - 32 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 24 - nC
2/7
AP4502GM
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. 30
2
VSD Forward On Voltage IS=-1.8A, VGS=0V - - -1.2 V
trr Reverse Recovery Time IS=-5A, VGS=0V, - 28 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
3/7
AP4502GM
N-Channel
30 30
5.0V 5.0V
T A =25 ℃ T A =150 ℃
4.5V 4.5V
3.5V 3.5V
2.5V 2.5V
20 20
V G =2.0V
V G = 2.0 V
10 10
0 0
0 1 2 3 0 1 2 3 4
34 1.8
I D = 5.2A I D =8.3A
T A = 25 o C V G =10V
30
Normalized R DS(ON)
26 1.4
RDS(ON0 (mΩ)
22
18 1.0
30 -30
14
10 0.6
1 2 3 4 5 -50 0 50 100 150
o
V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)
8 1.6
Normalized VGS(th) (V)
6 1.2
IS(A)
T j =150 o C T j =25 o C
4 0.8
2 0.4
0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150
4/7
AP4502GM
N-Channel
f=1.0MHz
12 10000
VGS , Gate to Source Voltage (V)
10
ID=8A
V DS = 10 V C iss
8 1000
C (pF)
C oss
6
C rss
4 100
0 10
0 10 20 30 40 50 1 5 9 13 17 21 25
100 1
Duty factor=0.5
Normalized Thermal Response (R thja)
100us 0.2
10
0.05
ID (A)
1
10ms
0.02
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
VDS VG
90%
QG
4.5V
QGS QGD
10%
VGS
td(on) tr td(off) tf
Charge Q
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
5/7
AP4502GM
P-Channel
20 20
V G = - 1.5 V
8 8
4 4
0 0
0 1 2 3 4 5 0 1 2 3 4
60 1.4
I D = -5.7 A I D = -5.7 A
T A =25 o C V G = - 10V
56
1.2
Normalized R DS(ON)
RDS(ON) (mΩ)
52
1.0
48
0.8
44
30 -30
40 0.6
1 2 3 4 5 -50 0 50 100 150
6
Normalized -VGS(th) (V)
1.0
-IS(A)
T j =150 o C T j =25 o C
0.8
0 0.6
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150
6/7
AP4502GM
P-Channel
f=1.0MHz
12 10000
-VGS , Gate to Source Voltage (V)
I D = -5A 1000
C iss
V DS = -16V
C (pF)
6
100 C oss
3
C rss
0 10
0.0 5.0 10.0 15.0 20.0 25.0 30.0 1 5 9 13 17 21 25
Duty factor=0.5
10
100us 0.2
1ms
-ID (A)
1 0.1 0.1
10ms
0.05
PDM
100ms t
0.1
1s T
0.02
Duty factor = t/T
T A =25 o C DC 300.01
-30 Peak Tj = PDM x Rthja + Ta
Rthja=135 oC/W
Single Pulse Single Pulse
0.01 0.01
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
VDS VG
90%
QG
-4.5V
QGS QGD
10%
VGS
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
7/7
ADVANCED POWER ELECTRONICS CORP.
D
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
8 7 6 5 A1 0.10 0.18 0.25
B 0.33 0.41 0.51
E1 E C 0.19 0.22 0.25
D 4.80 4.90 5.00
1 E1 3.80 3.90 4.00
2 3 4
E 5.80 6.15 6.50
L 0.38 0.71 1.27
e θ 0 4.00 8.00
e 1.27 TYP
B
A1
DETAIL A L θ
DETAIL A
Part Number
Package Code
meet Rohs requirement
4502GM
YWWSSS Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence