International Journal of Electronics and Computer Science Engineering 09

Available Online at www.ijecse.org ISSN- 2277-1956

Design and Analysis of Isolation Improvement and

Compact Size of SPDT Switch with Switchable Open
Stub Resonator for Wireless Communication
.1*
N. A. Shairi , B. H. Ahmad .1, Z. Zakaria .1, Peng Wen Wong 2
1
Center for Telecommunication Research & Innovation (CeTRI),Telecommunication Engineering
Department, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM),
Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia
2
Electrical & Electronic Engineering Department, Universiti Teknologi Petronas (UTP), Bandar Seri Iskandar,
31750 Tronoh, Perak, Malaysia
1*
noorazwan@utem.edu.my

Abstract- Two new designs of switchable microstrip line open stub resonator are proposed for isolation improvement of
SPDT discrete PIN diode switch which is targeted for wireless communication such as WiMAX and LTE application at
3.5 GHz band. Despite of isolation improvement, the second design of the resonator can reduce overall size of SPDT
discrete PIN diode switch. The PIN diodes are based on commercialize single PIN diode in SOD523 package. The
solutions are for microstrip line based circuit design with low performance discrete PIN diode and low cost printed circuit
board using FR4 material to achieve isolation higher than 30 dB. Firstly, the conceptual and operation of the proposed
resonators are discussed using mathematical modeling. The isolation improvement using microstrip line open stub
resonator is modeled and analyzed based on two-port network. Then, two different SPDT discrete PIN diode switches
with switchable microstrip line open stub resonator are demonstrated. The simulated results and the measured results
agree well for both designs where it shows improvement of isolation higher than 30 dB and the second design is able to
reduce 34% of the total circuit size compared with the first design.

Keywords – SPDT switch, RF switch, switchable resonator, resonator

I. INTRODUCTION
RF and microwave switches are used for Time Division Duplex (TDD) switching in wireless communication such
as WiMAX and LTE application [1-4]. The switching elements in RF and microwave switches can use either PIN
diodes or FETs [5] depending on the requirement of circuit size and maximum power handling capability. As
illustrated in Figure 1, the RF and microwave switch which also known as Single Pole Double Throw (SPDT) switch
has three ports to switch between transmitter and receiver front-end to any type of antennas. An example of antenna
can be found in [6] for WiMAX application. Key parameters in SPDT switch design are the requirement of high
isolation between transmitter and receiver and also compact in size.
Until now, discrete PIN diodes are still desirable for higher power levels used in military, satellite communication
or base station applications [7]. Shunt SPDT switch topology is the most popular choice due to the capability of high
power handling [8-10]. However, in shunt SPDT switch design using standard discrete PIN diode package such
SOD323, SOD523 and SC-79, it is difficult to get high isolation which is more than 20 dB at frequency higher than 3
GHz. This is due to the parasitic inductance and capacitance associated with the package leads, bond wires and
package material [11, 12]. There are several popular techniques to improve isolation, such as multiples connection of
shunt PIN diodes [13, 14] and combination of series-shunt-shunt PIN diodes [15, 16]. However, these will increase
current consumption and overall circuit size. Based on literatures, resonators are popularly used in filter design [17]
where several applications of switchable or tunable resonator can be found in [18-20]. The switchable resonator also
can be found in switch design [21] where a technique using shunt stub resonators controlled by FET was implemented
for isolation improvement of SPDT MMIC switch. However, it was not focused on size reduction.

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N. A. Shairi et al.

Figure 1. An example application of SPDT switch in WiMAX or LTE front-end system.

In this paper, two new designs of switchable microstrip line open stub resonators are proposed for isolation
improvement and compact size of SPDT discrete PIN diode switch. It is targeted for WiMAX and LTE application at
3.5 GHz. The PIN diodes are based on commercialize PIN diode (BAP64-02) in SOD523 package from NXP
Semiconductors. The proposed switchable open stub resonator technique is differ from the technique used in [21]
especially on the size reduction. This paper is organized as follows. The design and analysis of the proposed
switchable open stub resonator is presented in section II. The discussion of the second design is focused more in this
section. Then, the theoretical analysis of isolation improvement in SPDT switch design using open stub resonator is
presented in section III. Simulation and measurement result of SPDT switch with the proposed switchable open stub
resonator are discussed in section IV. Concluding remarks are given in section V.
II. DESIGN AND ANALYSIS OF SWITCHABLE MICROSTRIP LINE OPEN STUB RESONATOR
Two proposed switchable microstrip line open stub resonators connected to microstrip line are illustrated in Figure
2 which is has two different techniques of switching. First, Figure 2 (a) is a switchable quarter wave (λ/4) open stub
resonator that modified from [21]. As a comparison, in our proposed resonator, it is switched between allpass and
bandstop response while in [21], it is switched between bandpass and bandstop response. Second, the switching
technique in Figure 2 (a) allows a single open stub resonator to connect to two microstrip lines as depicted in Figure 2
(b). Hence, this single switchable open stub resonator has a potential to reduce the size of SPDT switch despite
improving its isolation performance.

(a) (b)
Figure 2. Switchable microstrip line open stub resonator (a) for single microstrip line and (b) for two microstrip
lines.

In Figure 2 (b), two PIN diodes are used to switch between allpass and bandstop at different biasing voltage, so
that allpass or bandstop response of each microstrip line will be operated with alternate response at different time. As
shown in Fig. 3 (a), if a positive voltage is applied, D1 will be 'ON' state and D2 will be 'OFF' state. In this condition,
Microstrip Line 1 operates as a bandstop due to the open stub resonator, while the Microstrip Line 2 operates as an
allpass (a normal transmission line). If a negative voltage is applied (Fig. 3 (b)), D1 will be 'OFF' state and D2 will be
'ON' state. In this condition, Microstrip Line 1 operates as an allpass while the Microstrip Line 2 operates as a
bandstop.

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Design and Analysis of Isolation Improvement and Compact Size of SPDT Switch with Switchable Open Stub
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(a) (b)
Figure 3. Operation of single switchable open stub resonator (a) open stub at Microstrip Line 1 (biased with +5
V) (b) open stub at Microstrip Line 2 (biased with -5 V).

The bandstop response of the open stub resonator can be modeled using transmission matrix.
= | = | (1)
where Ts is transmission matrix of open stub resonator, T1 and T2 are transmission matrix of Microstrip Line 1 and T3
and T4 are transmission matrix of Microstrip Line 2.
Therefore, we have
cos sin 1 0 cos sin
= (2)
sin cos tan 1 sin cos

cos sin 1 0 cos sin

= . (3)
sin cos tan 1 sin cos

Since the impedance of Microstrip Line 1 and Microstrip Line 2 is 50 Ω, thus the transmission matrix of the
microstrip lines are fully matched with the characteristic impedance of 50 Ω and exhibit very minimum power losses.
Therefore T1, T2, T3, and T4 can be ignored in order to simplify the following equation where S parameter of the open
stub resonator can be obtained by converting the transmission matrix in (2) and (3) as
! | = ! | = . (4)
"#$ %& '() *

Impedance of the stub resonator can be obtained as [22]

+,
= = 1 1 (5)
%& -./ 0 2 . 4 +.556 7)8 . 9:
2

where d is thickness of substrate, W is width of microstrip line of open stub resonator and ;< is effective dielectric
constant.

The effective dielectric constant, ;< can be calculated from [22]

.= .=
;< = +8 9? C (6)
- @/B

where ;D is relative dielectric constant.

Then, rearrange (4) with (5), we get

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N. A. Shairi et al.

! | = ! | = EFG$H$ I JKLMθN . (7)

MT=URN X 1 1
OFQRST=S ×8 SR.Z[ZS$.\\] ^L8 SR.GGG99
2 2
VRSRF2
P 1W

To calculate length of open stub resonator, we know

= _` = -;< a+ ` (8)
where
2cd
a+ = .
e
,
Therefore, rearrange (8) and by substituting _` = , the λ/4 length of the open stub resonator can be determined as
I
`= F
FIf (9)
-./ 8 g 9
where c is speed of light and f is resonant frequency.
Figure 4 shows allpass and bandstop response for two microstrip lines (Microstrip Line 1 and Microstrip Line 2)
at different biasing voltage (+5 V and -5 V). The graph shows the ability of single switchable open stub resonator to
resonance at these microstrip lines at different time by changing the biasing voltage from +5 V to -5 V and vice versa.

(a) (b)
Figure 4. Allpass and bandstop response in single switchable open stub resonator (a) with biasing voltage,
V = +5 V and (b) with biasing voltage, V = -5 V.

Table 1 lists the calculated values of open stub impedance, Zs, length, l and attenuation pole using (5), (9) and (7)
respectively at 3.5 GHz. The calculated values are based on the various values of stub width. The calculated Zs , l and
attenuation pole are based on FR4 substrate having thickness of 1.6 mm and dielectric constant, εr of 4.7. It is
observed that the impedance of the open stub resonator can be changed by changing the W where ideally it does not
change the pole but only the bandwidth of bandstop resonant. However, if refer to (6) and (9) this also changes the
resonant of the resonator. Furthermore, the calculated values of attenuation poles are different for various widths
simply because of the changing of impedance. Since the length is also a function of effective dielectric constant, the
length values are also different at the same resonant frequency.
Table - 1 Calculated value of length, impedance and attenuation pole with various widths at 3.5 GHz.
Width, W Length, l Impedance, Zs Attenuation pole @ 3.5
(mm) @ 3.5 GHz (mm) (Ω) GHz (dB)
1 11.86 83.41 18.45
2 11.58 61.72 21.04
3 11.40 49.33 22.97
4 11.26 41.22 24.53
5 11.15 35.48 25.83
6 11.05 31.18 26.94
7 10.98 27.84 27.93

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Design and Analysis of Isolation Improvement and Compact Size of SPDT Switch with Switchable Open Stub
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8 10.91 25.15 28.81
9 10.85 22.95 29.60
10 10.80 21.12 30.33

90 12.0 32

Length at resonant freq. 3.5 GHz (mm)

80 11.8 30

Attenuation pole @ 3.5 GHz (dB)

70 28
11.6
Impedance (Ω)

60 26
11.4
50 24
11.2
40 22
11.0
30 20

20 10.8 18

10 10.6 16
0 2 4 6 8 10 12 0 2 4 6 8 10 12 0 2 4 6 8 10 12
Width (mm) Width (mm) Width (mm)

(a) (b) (c)

Figure 5. Characteristic of microstrip line open stub resonator (a) width versus impedance, (b) width versus length
and (c) width versus attenuation pole at 3.5 GHz.

III. ANALYSIS OF ISOLATION IMPROVEMENT OF SPDT SWITCH

A conventional single shunt PIN diode of SPDT switch design [5] is constructed (Figure 6) in order to compare
the isolation performance of the conventional circuit with the SPDT switch with switchable open stub resonator.

(a) (b)
Figure 6. Conventional SPDT switch (a) Circuit design (b) Isolation between Port 1 and Port 3.

In single shunt PIN diode (D1 or D2), the 'ON' state of the PIN diode is equivalent to forward resistance (Rf) and
series inductance (Ls) [22]. By assuming the SPDT switch in transmit mode, D1 must be turned 'OFF' and D2 must be
turned 'ON' state. In this condition the isolation between Tx Port and Rx Port is depending on D2. Thus, a simplified
transfer matrix of the SPDT switch for isolation analysis is given by
1 0
= h? C 1l . (10)
if "jk&

Then the isolation between Port 1 and Port 3 (S31) can be obtained by converting the transfer matrix in (10) to S-
parameter. Hence,

! = R . (12)
mf S Eno&

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From (12), we know that isolation is obtained solely due to Rf and Ls of the 'ON' state of shunt PIN diode. Usually,
if using single shunt discrete PIN Diode (in standard package such as SOD523), it is difficult to achieve more than 30
dB of isolation between Port 1 and Port 3. This can be seen in Figure 6 (b) where the isolation performance of the
single shunt PIN diode is simulated using commercialize PIN diode (BAP64-02) in SOD523 package from NXP
Semiconductors.
Therefore, switchable microstrip line open stub resonator has a potential to improve isolation of SPDT switch. To
simplify the analysis, consider a two-port network consists of a shunt PIN diode and a switchable resonator shown in
Figure 7 (a). Voltage supply of +5 V is used to turn 'ON' the PIN diode and the resonator should produce an isolation
between Port 1 and Port 2.

(a) (b)
Figure 7. Two-port network of PIN diode with switchable resonator (a) circuit (b) isolation between Port 1 and
Port 2.

Further analysis is carried out by considering an ideal PIN diode in the switchable resonator, a simple transfer
matrix of the two-port network is given by
1 0 1 0 1 0
= i p = q8" '() * 9 1r h? C 1l = h? +
" '() *
C 1l. (13)
#
& if "jk& if "jk& #&

Converting the transfer matrix in (13) to S-parameter, we get

! = R E JKL t
. (14)
s u#$
mf S Eno& H&

From (14), it is observed that if we compare with (12) an additional isolation can be obtained by putting an
additional attenuation pole of resonator into the conventional shunt SPDT switch circuit.
The simulated isolation in Figure 7 (b) shows different performance of isolation between two-port with various
resonator widths. This is previously analyzed using mathematical modeling on the open stub resonator as shown in
Figure 5 (c). However, to obtain high isolation, it will increase width of the resonator and thus increase resonator size.
Therefore, trade-off must be taken into account between isolation performance and resonator size.
IV. SPDT SWITCH DESIGN WITH SWITCHABLE MICROSTRIP LINE OPEN STUB RESONATOR
Figure 8 shows SPDT switch with proposed switchable microstrip line open stub resonator where both designs are
controlled with the same operating condition. In transmit mode (Port 1 to Port 2), the D2 and D4 are turned 'ON' and;
D1 and D3 are turned 'OFF'. In this condition, the open stub resonator will be operating at receive arm (Port 3). This
resonator will act as a bandstop in the receive arm. Hence, the additional isolation can be obtained due to the λ/4 open
stub resonator (converting from high impedance to low impedance). The same operation can be obtained in the
receive mode (Port 2 to Port 3) when D1 and D3 are turned 'ON' and; D2 and D4 are turned 'OFF'. The voltage
control is +5 V to turn 'ON' and -5 V to turn 'OFF' all the PIN diodes in the SPDT switch circuit.

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Design and Analysis of Isolation Improvement and Compact Size of SPDT Switch with Switchable Open Stub
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(a)

(b)
Figure 8. SPDT switch with (a) double switchable microstrip line open stub resonator and (b) single switchable
microstrip line open stub resonator.

The switchable open stub resonators are designed together with PIN diode at frequency resonance of 3.5 GHz.
Hence, the parameters of PIN diode such as junction capacitance and series inductance are taken into account. This
gives the final size of resonator before fabrication as W = 7 mm and l = 5.3 mm for double open stub resonator; and W
= 8 mm and l = 5.5 mm for single open stub resonator. The implemented SPDT switch photographs are shown in
Figure 8. Obviously by using single switchable open stub resonator, it is observed that the SPDT switch design in
Figure 8 (a) with size of 5.7 cm x 2 cm (total square area is 11.4 cm2) can be reduced to 2.5 cm x 3 cm (total square
area is 7.5 cm2) as shown in Figure 8 (b). In term of percentage, 34% of size reduction can be achieved with this
technique. Hence, it has a potential for size reduction of RF system level design in WiMAX or LTE front-end system.
In Figure 9, the SPDT switch with resonator and conventional SPDT switch are compared in term of isolation
(ISO), insertion loss (IL) and return loss (RL). It can be seen that the isolation improvement of SPDT switch using
open stub resonator is more than 30 dB at 3.5 GHz despite having good performance of insertion loss and return loss.

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N. A. Shairi et al.

Figure 9. Performance comparison between single shunt SPDT switch (conventional) and SPDT switch with
switchable microstrip line open stub resonator.

(a)

(b)
Figure 10. Simulation and measurement result of SPDT swith (a) double switchable microstrip line open stub
resonator and (b) single switchable microstrip line open stub resonator.

Figure 10 is the simulated and measured result of SPDT switch with the proposed switchable microstrip line open
stub resonator. Generally, it is successfully demonstrated that the SPDT switch can achieve high isolation which is
more than 30 dB at 3.5 GHz compared with the conventional circuit. Both designs have lower insertion loss (less than
2 dB loss in measured result) and return loss is higher than 10 dB at 3.5 GHz. The measured isolation in Figure 10 (a)
and (b) has shifted 100 MHz and 20 MHz respectively to the lower frequency from center frequency of 3.5 GHz.
Moreover, the isolation level has degraded about 5 to 6 dB compared to the simulated result. Main factor that
contribute to the frequency shifting and isolation degradation is due to additional parasitic inductance which presence
in the packaged PIN diode (tolerance value) combined with the different amount of solder connections on the PIN
diode leads. Other factor is the board fabrication process that causes the resonant frequency variation in the microstrip
line open stub resonator.
V.CONCLUSION
Two new designs of switchable microstrip line open stub resonator are proposed for isolation improvement and
the second design is proposed in addition of size reduction of SPDT discrete PIN diode switch. The conceptual and
the operation of the resonator are discussed in this paper using mathematical modeling. The open stub resonator is
then combined with single shunt PIN diode for further analysis of isolation improvement. The results show higher
isolation can be obtained with lower impedance of open stub resonator. As a trade-off, it will increase width of the
resonator and thus increase resonator size. Therefore, trade-off must be taken into account between isolation
performance and resonator size. The SPDT discrete PIN diode switches with switchable microstrip line open stub
resonators are demonstrated where the simulated results and the measured results agree well. The results show

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Design and Analysis of Isolation Improvement and Compact Size of SPDT Switch with Switchable Open Stub
Resonator for Wireless Communication
improvement of isolation higher than 30 dB at 3.5 GHz and able to reduce 34% of the total circuit size. Thus, we
conclude that a significant isolation improvement and circuit size reduction can be achieved by using switchable open
stub resonator in SPDT discrete PIN diode switch and suitable for WiMAX and LTE application at 3.5 GHz band.
VI.ACKNOWLEDGEMENT
We would like to acknowledge the contribution of our colleagues from fabrication laboratory and microwave
laboratory, faculty of electronics and computer engineering, utem for fabrication and measurement of the research
works
VII. REFERENCES
[1] Yu-Cheng Hsu; Ping-Hsun Wu; Cheng-Chung Chen; Jian-Yu Li; Sheng-Feng Lee; Wu-Jing Ho; Cheng-Kuo Lin; , "Single-chip RF front-
end MMIC using InGaAs E/DpHEMT for 3.5 GHz WiMAX applications," Microwave Conference, 2007. European , pp.1217-1220, 9-12
Oct. 2007.
[2] Rodriguez, S.; Rusu, A.; Ismail, M.; , "WiMAX/LTE receiver front-end in 90nm CMOS," Circuits and Systems, 2009. ISCAS 2009. IEEE
International Symposium on , pp.1036-1039, 24-27 May 2009.
[3] Ke Zhou; Jianyi Zhou; Zhiming Xu; , "Design of a high performance RF transceiver for TDD-LTE system," Microwave Symposium Digest
(MTT), 2012 IEEE MTT-S International , pp.1-3, 17-22 June 2012.
[4] Zhiming Xu; Jianyi Zhou; Zhiqiang Yu; Weichen Huang; Yongqiao Ni; Fei Huang; Yingying Chu; , "Design of high performance RF
transceiver for next generation wireless communications," Microwave and Millimeter Wave Technology (ICMMT), 2012 International
Conference on , vol.1, pp.1-4, 5-8 May 2012.
[5] Kai Chang, Inder Bahl and Vijay Nair. RF and Microwave Circuit and Component Design for Wireless Systems. Third Avenue, N.Y.: John
Wiley & Sons, Inc. 2000, Chapter 7.
[6] Barun Mazumdar, "A compact printed Antenna for WiMAX Application", International Journal of Electronics and Computer Science
Engineering (IJECSE), Vol. 1, No. 3, page 1561-1565, 2012.
[7] Pat Hindle, "The State of RF and Microwave Switches", Microwave Journal, November 2010, Vol. 53, No. 11, page 20.
[8] Bellantoni, J.V.; Bartle, D.C.; Payne, D.; McDermott, G.; Bandla, S.; Tayrani, R.; Raffaelli, L.; , "Monolithic GaAs p-i-n diode switch
circuits for high-power millimeter-wave applications," Microwave Theory and Techniques, IEEE Transactions on , vol.37, no.12, pp.2162-
2165, Dec 1989.
[9] Shigematsu, T.; Suematsu, N.; Takeuchi, N.; Iyama, Y.; Mizobuchi, A.; , "A 6-18 GHz 20 W SPDT switch using shunt discrete PIN
diodes," Microwave Symposium Digest, 1997., IEEE MTT-S International , vol.2, pp.527-530 vol.2, 8-13 Jun 1997.
[10] Dong-Wook Kim, "Small-Sized High-Power PIN Diode Switch with Defected Ground Structure for Wireless Broadband Internet," ETRI
Journal, vol.28, no.1, Feb. 2006.
[11] Morkner, H.; , "Wafer Scale Package construction and usage for RF through millimeter wave applications," Microwave Integrated Circuits
Conference, 2009. EuMIC 2009. European , pp.419-422, 28-29 Sept. 2009.
[12] S. Chaturvedi, S. V. Bhalke, G. Sai Saravanan, and S. K. Koul, "Electromagnetic simulation and characterization a metal ceramic package
for packaging of high isolation switches," Progress In Electromagnetics Research C, Vol. 16, 111-125, 2010.
[13] Jung Gil Yang; Munho Kim; Kyounghoon Yang; , "An InGaAs PIN-diode based broadband traveling-wave switch with high-isolation
characteristics," Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on , pp.207-209, 10-14 May
2009.
[14] Buber, T.; Kolak, F.; Kinayman, N.; Bennett, J.; , "A low-loss high-isolation absorptive GaAs SPDT PIN switch for 24 GHz automotive
applications," Radio and Wireless Conference, 2003. RAWCON '03. Proceedings , pp.349-352, 2003.
[15] Shairi, N.A.; Ahmad, B.H.; Khang, A.C.Z.; , "Design and analysis of broadband high isolation of discrete packaged PIN diode SPDT switch
for wireless data communication," RF and Microwave Conference (RFM), 2011 IEEE International , pp.91-94, 12-14 Dec. 2011.
[16] Pinping Sun; Le Wang; Parag Upadhyaya; Deukhyoun Heo; , "High isolation 10HHz to 20 GHz SPDT switch design using novel octagonal
pin diode structure," Microelectronics and Electron Devices, 2005. WMED '05. 2005 IEEE Workshop on , pp.38-41, 15-15 April 2005.
[17] Navita Singh, Monika Singh, Avinash Kumar, "Recent Progress in Synthesis Techniques of Microstrip Bandpass Filter," International
Journal of Electronics and Computer Science Engineering (IJECSE), Vol. 1, No. 2, page 479-484, 2012.
[18] Pu-Hua Deng; Jyun-Hao Jheng; , "A Switched Reconfigurable High-Isolation Dual-Band Bandpass Filter," Microwave and Wireless
Components Letters, IEEE , vol.21, no.2, pp.71-73, Feb. 2011.
[19] J.-X. Chen, J. Shi, Z.-H. Bao, and Q. Xue, "Tunable and switchable bandpass filters using slot-line resonators," Progress In
Electromagnetics Research, Vol. 111, 25-41, 2011.
[20] X.-J. Liao, H.-C. Yang, N. Han " A Switchable Bandpass Filter Using Pin Diodes On/Off Characteristics For WLAN Application," Journal
of Electromagnetic Waves and Applications, Vol. 25, Iss. 10, 2011.
[21] Tsukahara, Y.; Amasuga, H.; Goto, S.; Oku, T.; Ishikawa, T.; , "60GHz High Isolation SPDT MMIC switches using shunt pHEMT
resonator," Microwave Symposium Digest, 2008 IEEE MTT-S International , pp.1541-1544, 15-20 June 2008.
[22] D. M. Pozar, Microwave Engineering. Hoboken, NJ: John Wiley & Sons, 2005. page 144 -145.

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