MDS3652– Single P-Channel Trench MOSFET

MDS3652
Single P-Channel Trench MOSFET, -30V, -11A, 17mΩ

General Description Features

The MDS3652 uses advanced MagnaChip’s MOSFET  VDS = -30V
Technology to provide low on-state resistance, high  ID = -11A @VGS = -10V
switching performance and excellent reliability  RDS(ON)
< 17mΩ @VGS = -10V
< 27mΩ @VGS = -4.5V

Applications
 Load Switch
 General purpose applications

D
5(D)
6(D)
7(D)
8(D)

G
4(G)
3(S)
2(S)
1(S)
S

Absolute Maximum Ratings (Ta =25oC unless otherwise noted)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS ±20 V
o
Ta=25 C -11 A
Continuous Drain Current o
ID
Ta=100 C -7 A
Pulsed Drain Current IDM -60 A
o
Ta=25 C 3.1
Power Dissipation(1) o
PD W
Ta=100 C 1.2
Single Pulse Avalanche Energy(2) EAS 60 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient(Steady-State) RθJA 40 o
C/W
Thermal Resistance, Junction-to-Case RθJC 25

Jul 2011. Version 1.1 1 MagnaChip Semiconductor Ltd.

 MDS3652– Single P-Channel Trench MOSFET
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDS3652URH -55~150 C SOIC-8 Tape & Reel Halogen Free

Electrical Characteristics (Ta = 25oC unless otherwise noted)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = -250μA, VGS = 0V -30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250μA -1.0 -1.9 -3.0
Drain Cut-Off Current IDSS VDS = -24V, VGS = 0V - -1
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = -10V, ID = -11A - 13 17
Drain-Source ON Resistance RDS(ON) mΩ
VGS = -4.5V, ID = -6A - 21 27
Forward Transconductance gFS VDS = -5V, ID = -11A - 25 - S
Dynamic Characteristics
Total Gate Charge Qg - 35 -
VDS = -15V, ID = -11A,
Gate-Source Charge Qgs - 7.8 - nC
VGS = -10V
Gate-Drain Charge Qgd - 6.2 -
Input Capacitance Ciss - 1770 -
VDS = -15V, VGS = 0V,
Reverse Transfer Capacitance Crss - 150 - pF
f = 1.0MHz
Output Capacitance Coss - 350 -
Turn-On Delay Time td(on) - 13.0 -
Turn-On Rise Time tr VGS = -10V ,VDS = -15V, - 26.8 -
ns
Turn-Off Delay Time td(off) RL = 2.7Ω, RGEN = 3Ω - 34.4 -
Turn-Off Fall Time tf - 17.4 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - -0.75 - V
Body Diode Reverse Recovery Time trr - 27 - ns
IF = -11A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 12 - nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. Starting TJ = 25°C, L = 1mH, IAS = 11A, VDD = 15V, VGS = 10V

Jul 2011. Version 1.1 2 MagnaChip Semiconductor Ltd.

 MDS3652– Single P-Channel Trench MOSFET
50 50
-10.0V -6.0V
-5.0V -4.5V
45

40 40
VGS=-4.5V
35

RDS(ON) [mΩ ]
30 -4.0V 30
-ID [A]

25
VGS=-10V
20 20
-3.5V
15

10 10
VGS=-3.0V
5

0 0
0 1 2 3 4 5 0 5 10 15 20
-VDS [V] -ID [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8
*Note; ID=-11A
50
Drain-Source On-Resistance [mΩ ]

*Note ; ID=-11A

1.6 45

40
RDS(ON), (Normalized)

1.4
RDS(ON) [mΩ ]

VGS=-4.5V 35
VGS=-10V
125 ℃

1.2 30

25
1.0
25℃

20

0.8
15

0.6 10
-50 -25 0 25 50 75 100 125 150 4 5 6 7 8 9 10

TJ, Junction Temperature [ ] ℃

-VGS [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

20 10
* Note ; VDS=-5V

1
15

0.1
-IS [A]
-ID [A]

10

0.01

5 125 ℃
25℃

125 ℃

25 ℃
1E-3

0 1E-4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.2 0.4 0.6 0.8 1.0

-VGS [V] -VSD [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature

Jul 2011. Version 1.1 3 MagnaChip Semiconductor Ltd.

 MDS3652– Single P-Channel Trench MOSFET
10 2500
* Note : ID = -11A Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
8 2000
Ciss

Capacitance [pF]
6 1500
-VGS [V]

4
1000

※ Notes ;
1. VGS = 0 V
2 Coss 2. f = 1 MHz
500
Crss

0
0 5 10 15 20 25 30 35 0
0 5 10 15 20 25 30
-Qg [nC]
-VDS [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10
14

1 ms 12
1
10
10 ms 10

Operation in This Area 100 ms 8

-ID [A]

-ID [A]

0
10 is Limited by R DS(on)

1s
6
10s
10
-1
DC 4

Single Pulse
2
Rθ ja=40 /W
℃

Ta=25℃

-2
10 0
-1 0 1 2
10 10 10 10 25 50 75 100 125 150

-VDS [V] Ta [ ℃ ]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Ambient Temperature

1
10
Zθ Ja, Normalized Thermal Response [t]

0
10
D=0.5

0.2

-1
0.1
10 * Notes :
0.05 Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JA=40 /W
0.02
℃

0.01
-2
10

single pulse

-5 -4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [s]

Fig.11 Transient Thermal Response Curve

Jul 2011. Version 1.1 4 MagnaChip Semiconductor Ltd.

 MDS3652– Single P-Channel Trench MOSFET
8 Leads, SOIC

Dimensions are in millimeters unless otherwise specified

Jul 2011. Version 1.1 5 MagnaChip Semiconductor Ltd.

 MDS3652– Single P-Channel Trench MOSFET

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller .

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Jul 2011. Version 1.1 6 MagnaChip Semiconductor Ltd.