PolarHVTM HiPerFET IXFN 64N60P VDSS = 600 V

Power MOSFET ID25 = 50 A

RDS(on) ≤ 96 m Ω
N-Channel Enhancement Mode trr ≤ 200 ns
Avalanche Rated
Fast Intrinsic Diode

miniBLOC, SOT-227 B (IXFN)

E153432
S
Symbol Test Conditions Maximum Ratings G

VDSS TJ = 25°C to 150°C 600 V

VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V

S
VGSS Continuous ± 30 V D
VGSM Transient ± 40 V
G = Gate D = Drain
ID25 TC = 25°C 50 A S = Source
IDM TC = 25°C, pulse width limited by TJM 150 A Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
IAR TC = 25°C 64 A return) terminal.
EAR TC = 25°C 80 mJ
EAS TC = 25°C 3.5 J
Features
dv/dt IS ≤IDM, di/dt £ 100 A/µs, VDD ≤ VDSS, 20 V/ns • International standard package
TJ ≤150°C, RG = 2 Ω • Encapsulating epoxy meets
PD TC = 25°C 700 W UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
TJ -55 ... +150 °C isolation
TJM 150 °C • Low RDS (on) HDMOSTM process
Tstg -55 ... +150 °C • Rugged polysilicon gate cell structure
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C • Unclamped Inductive Switching (UIS)
VISOL 50/60 Hz, RMS, 1 minute 2500 V~ rated
• Low package inductance
Md Mounting torque 1.13/10 Nm/lb.in. • Fast intrinsic Rectifier
Terminal torque 1.13/10 Nm/lb.in.
Applications
Weight 30 g
• DC-DC converters
• Synchronous rectification
• Battery chargers
Symbol Test Conditions Characteristic Values • Switched-mode and resonant-mode
(TJ = 25° C, unless otherwise specified) Min. Typ. Max. power supplies
BVDSS VGS = 0 V, ID = 3 mA 600 V • DC choppers
• Temperature and lighting controls
VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V • Low voltage relays
IGSS VGS = ±30 VDC, VDS = 0 ±200 nA Advantages
• Easy to mount
IDSS VDS = VDSS 25 µA
• Space savings
VGS = 0 V TJ = 125° C 1000 µA
• High power density
RDS(on) VGS = 10 V, ID = 0.5 ID25, Note 1 96 mΩ

© 2006 IXYS All rights reserved DS99443E(01/06)

 IXFN 64N60P

Symbol Test Conditions Characteristic Values

(TJ = 25° C, unless otherwise specified) miniBLOC, SOT-227 B
Min. Typ. Max.

gfs VDS = 20 V; ID = 0.5 ID25, Note 1 40 63 S

Ciss 12 nF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 pF
Crss 80 pF

td(on) 28 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 23 ns
M4 screws (4x) supplied
td(off) RG = 1 Ω (External) 79 ns
Dim. Millimeter Inches
tf 24 ns Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
Qg(on) 200 nC C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 70 nC
E 4.09 4.29 0.161 0.169
Qgd 68 nC F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
RthJC 0.18 °C/W J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
RthCK 0.05 °C/W L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Source-Drain Diode Characteristic Values Q 26.54 26.90 1.045 1.059
(TJ = 25° C, unless otherwise specified) R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
Symbol Test Conditions Min. Typ. Max.
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
IS VGS = 0 V 64 A

ISM Repetitive 150 A

VSD IF = IS, VGS = 0 V, Note 1 1.5 V

trr IF = 25A, -di/dt = 100 A/µs 200 ns

QRM VR = 100V 0.6 µC
IRM 6.0 A

Notes:
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
 IXFN 64N60P

Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics

@ 25ºC @ 25ºC
65 160
60 V GS = 10V V GS = 10V
8V 140 8V
55
7V
50
120
45
7V
I D - Amperes

I D - Amperes
40 100

35
80
30
25 6V 60
20 6V
15 40

10
20
5 5V
5V
0 0
0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 16 18 20
V DS - Volts V DS - Volts

Fig. 3. Output Characteristics Fig. 4. R DS(on) Normalized to ID = 32A v s.

@ 125ºC Junction Temperature
65 3.1
60 V GS = 10V
V GS = 10V
7V 2.8
55
50 2.5
R DS(on) - Normalized

45
2.2
6V
I D - Amperes

40
I D = 64A
35 1.9

30 1.6 I D = 32A
25
1.3
20
15 5V
1
10
0.7
5
0 0.4
0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150
V DS - Volts T J - Degrees Centigrade

Fig. 5. R DS(on) Normalized to ID = 32A v s. Fig. 6. Maximum Drain Current v s.

Drain Current Case Temperature
3.2 55

3 V GS = 10V 50
TJ = 125ºC
2.8 45
2.6 40
R DS(on) - Normalized

2.4
35
I D - Amperes

2.2
30
2
25
1.8
20
1.6
15
1.4
1.2 TJ = 25ºC 10

1 5

0.8 0
0 20 40 60 80 100 120 140 160 -50 -25 0 25 50 75 100 125 150
I D - Amperes T J - Degrees Centigrade

© 2006 IXYS All rights reserved

 IXFN 64N60P

Fig. 7. Input Admittance Fig. 8. Transconductance

100 130
120
90
110
80
100
70 90

g f s - Siemens
I D - Amperes

60 80 TJ = - 40ºC
70 25ºC
50 125ºC
TJ = 125ºC 60
40 25ºC 50
- 40ºC
30 40
30
20
20
10
10
0 0
3.5 4 4.5 5 5.5 6 6.5 7 0 10 20 30 40 50 60 70 80 90 100
V GS - Volts I D - Amperes

Fig. 9. Forward Voltage Drop of

Intrinsic Diode Fig. 10. Gate Charge
140 10
V DS = 300V
9
120 I D = 32A
8
I G = 10mA
100 7
I S - Amperes

V GS - Volts

6
80
5
60
4
TJ = 125ºC
40 3

TJ = 25ºC 2
20
1

0 0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 60 80 100 120 140 160 180 200
V SD - Volts Q G - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area

100,000 1,000
f = 1 MHz TJ = 150ºC
C iss TC = 25ºC
Capacitance - PicoFarads

10,000 RDS(on) Limit

100
I D - Amperes

1,000 25µs

C oss 100µs

1ms
10
100 10ms
DC
C rss

10 1
0 5 10 15 20 25 30 35 40 10 100 1000
V DS - Volts V DS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.
 IXFN 64N60P

Fig. 13. Maximum Transient Thermal Resistance

1.000
R (th)JC - ºC / W

0.100

0.010
0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds

© 2006 IXYS All rights reserved