NATIONAL UNIVERSITY OPEN AND DISTANCE – UNAD COLOMBIA
ELEMENTS UNIPOLAR AND BIPOLAR SEMICONDUCTORS
Luis Carlos Montaño Guerrero
November of 2018
Summary
The present investigation corresponds to
know and understand the functionality,
behaviour and notable characteristics of the
Unipolar and bipolar transistors, The transistor
of effect field or FET or Unipolar, is in reality
a family of transistors that base in the electrical
field to control the conductivity of a "channel"
in a material semiconductor. The FET, as all the
transistors, can pose like resistances controlled
by voltage.
On the other hand, the bipolar Transistors
are devices semiconductors of three terminals
formed by two junturas PN separated by a very
narrow region. Of this form remain formed
three regions, Andmisor, Colector and Btakes,
which can be of two types, NPN and PNP; the
Emisor that differentiates of the others
two for being strongly doped , comporting
as a metal, the Base is the intermediate, very
narrow, that separates the emisor of the
manifold and the Manifolds the one of Mays
extension.
The bipolar devices technologically developed
before that the ones of effect of field or FET,
base his process of driving by means of the
participation of the two types of bearers of load
(electrons and gaps). They differentiate of the
unipolar devices, in that these last base his
process of driving in the participation of an
alone type of bearer.
These devices use generally in analog
electronics and in some applications of digital
electronics like the technology TTL or
BICMOS
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Abstrac
The present investigation corresponds to know
and understand the functionality, behaviour and
notable characteristics of the Unipolar and
bipolar transistors, The transistor of effect field
or FET or Unipolar, is in reality a family of
transistors that base in the electrical field to
control the conductivity of a "channel" in a
material semiconductor. The FET, as all the
transistors, can pose like resistances controlled
by voltage.
On the other hand, the bipolar Transistors are
devices semiconductors of three terminals
formed by two junturas PN separated by a very
narrow region. Of this form remain formed
three regions, Andmisor, Colector and Btakes,
which can be of two types, NPN and PNP; the
Emisor that differentiates of the others
two for being strongly doped , comporting
as a metal, the Base is the intermediate, very
narrow, that separates the emisor of the
manifold and the Manifolds the one of Mays
extension.
The bipolar devices technologically developed
before that the ones of effect of field or FET,
base his process of driving by means of the
participation of the two types of bearers of load
(electrons and gaps). They differentiate of the
unipolar devices, in that these last base his
process of driving in the participation of an
alone type of bearer.
These devices use generally in analog
electronics and in some applications of digital
electronics like the technology TTL or
BICMOS
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Key words: Of this form, a bipolar transistor could use like

Unipolar, Bipolar, Door, Drainage.
Introduction
The semiconductors are elements whose
conductivity varies depending the temperature
or tension applied, comporting as conductive or
insulating depending the surroundings,
however, from does long when they initiated the
studies of these elements the man projected in
being able to have control of the conductivity of
these.
a dependent source that as we will see is the
fundamental element of the model of an
amplifier of signal. Besides, the tension of
control applied can cause that the current in the
third terminal of the bipolar transistor change
of zero to a high value, allowing that the active
device can use like a conmutador with two
logical states, that is the basic element in the
design of digital circuits.

In this section, go to familiarise us with the

concept of the Unipolar and Bipolar
Transistors, as well as his use and behaviour.
We know that the transistor is a device
semiconductor that works like regulator,
amplifier, among others. The transistor is a new
component used in the practices of electronics.
This is a device semiconductor of three Figure No 1. Representation of the Bipolar Transistor
terminals and that uses for a variety of
functions of control in the electronic circuits In her it suggests that the transistor has a bar
that go from the amplification of signals, to the divided in three regions such:
design of digital logical circuits and memories.

The transistor is an element that has

originated an evolution in the electronic field,
at present exist a big variety of electronic
elements which are constituted by these
devices, in this work showed the general
operation, his main characteristic, as well as his
physical appearances, his basic structures and
the symbologies used for each one of them Figure No 2. Representation of the Bipolar Transistor

By the previous, to continuation, are the
development of investigations referents to these
elements, and simulations supporting us with
the Software Proteus for determinations and
practical of a circuit.
This form is in reality the form in which they
were manufactured the first transistors in the
1948. The bar was a same glass semiconductor
doped differently in the three regions from the
liquid state.

Bipolar transistors: This original transistor was not done of

silicon but of an alike element called
The basic principle of operation of a bipolar germanium, much easier to work with him. The
transistor is the use of the existent tension three connections of the transistor
between two of his terminals to control the call Emisor, Manifold and Base.
current that circulates through the thirdof them.

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In this figure the doping does
by diffusion of the materials inside the glass to
end to modify the zone selected like material
type P or N. The areas to be modified select by
technicians of photography in stages by what
the operations make in the appropriate
sequence. The diffusion does in special ovens
Figure No 3. Doping
In a transistor type NPN, the regions of the
emisor and of the manifold of the glass are of
the type of material N the same that the anode
of the union of the diode. And the zone of the
half, the base, is the same material P of the
union of the diode.
To understand how works a transistor
Bipolar, see that the source of power or source
of electrons is a game of batteries that supply
three volts. It notice that the emisor of the
transistor is to -3 volts. One of the terminals of
the bombillo and a terminal of the battery are to
earth or (zero) volts.
Figure No 4. Understanding Bipolar Transistor
The negative voltage in the emisor supplies him
electrons and these flow through the transistor,
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the lamp and to earth, that is the another side of
the battery.
The transistor controls the current to the
lamp, in proportion to the small current that
supplies to the base. This small current is
controlled to his time with the variable
resistance (potentiometer) R2. By his part R1
puts in the circuit to limit the positive voltage
maximum to the base regarding the emisor. The
voltage of the base will not be able to be more
positive that -2 volts.
The bipolar transistors of juntura have
different operative regions, defined mainly by
the form in that they are polarised:
Figure No 5. Uses of the Bipolar Transistor
The transistors also relate or have a crowd of
applications, for example, can see that they find
like Amplification of all type (radio, television,
instrumentation), Generation of signal
(oscillators, generators of waves, broadcast of
radiofrecuencia), Conmutación, acting of
switches (control of relays, sources of feeding
commutated, control of lamps, modulation by
width of impulses PWM), Detection of
luminous radiation (phototransistors).
Figure No 6. Operative regions of the transistor
Reverse active region: it Corresponds to a
reverse polarisation of the union emisor-basic
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and to a direct polarisation of the union
manifold-basic. This region is used seldom.
Region of court: it Corresponds to a reverse
polarisation of both unions. The operation in
this region corresponds to applications of
conmutación in the way applications of
conmutación in the way turned off, as the
transistor acts like an open switch (IC 0).
Region of saturation: it Corresponds to a
direct polarisation of both unions. The
operation of this region corresponds to
applications of conmutación in the way lit, as
the transistor acts like an enclosed switch (VCE
0).
Encapsulado And identification of the
terminals of a transistor
Whenever it was possible, the capsule of the
transistor will present some mark to indicate
which connectors are connected to the emisor,
manifold or base of a transistor.
Figure No 7. Encapsulados Of the Bipolar Transistor
Use and / or applications of the bipolar
transistor
The bipolar transistor has multiple functions,
among them we have to be part of the stage of
amplification in Radio Frequency equipment,
radio in the range of HF, VHF, among others.
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Figure No 8. Example Use of the Transistor
Unipolar transistor
The transistor of effect field (ield-Effect
Transistor or FET, in English) is in reality a
family of transistors that base in the electrical
field to control the conductivity of a "channel"
in a material semiconductor. The FET, as all the
transistors, can pose like resistances controlled
by voltage.
Tipos Of T ransistores Ornipolares
Between the types of transistors more used
have:
a. The MOSFET (Metal-Oxide-
Semiconductor Field-Effect Transistor)
uses an insulator.
b. The JFET (Junction Field-Effect
Transistor) uses a union P-N
c. The MESFET (Metal-Semiconductor
Field Effect Transistor) substituye the
union PN of the JFET with a barrier
Schottky.
d. In the HEMT (High Electron Mobility
Transistor), also designated HFET
(heterostructure FET), the band of
material doped with "gaps" forms the
insulator between the door the body of
the transistor.
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e. The MODFET (Modulation-Doped
Field Effect Transistor)
f. The IGBT (Insulated-gate bipolar
transistor) is a device for control of
power. They are comunmente used
when the rank of voltage drainage-
source is between the 200 to 3000V.
Still like this the Power MOSFET still
are the most used devices in the rank of
tensions drainage-source of 1 to 200V.
g. The FREDFET is a FET skilled
designed to award a recovery ultra fast
of the transistor.
h. The DNAFET is a skilled type of FET
that acts like biosensor, using a door
manufactured of molecules of DNA of a
chain to detect chains of equal DNA.
Figure No 9. Symbology of the Unipolar Transistor
The name of the terminals of the
Unipolar Transistor comes given by:
a. Drain (D) Is the terminal by to the that
go out the bearers of the device (the
electrons in the JFET of channel n and
the gaps in the one of channel p)
b. Source (S) Is the terminal by which go
in the bearers.
c. Door (G) Is the terminal by means of
which controls the current of bearers
through the channel.
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Use and/or applications
To the equal that the BJT, when the JFET
employs like amplifier, can have in any one of
the three determinate configurations by the form
to connect it, this is: Source or common Jet
(S.C.), Drenador Común (D.C.) And P uerta
Común (G.C.).
His characteristic are similar, taking into
account the peculiarities that do them distinct to
the offered in analogous disposals by the bipolar
transistors. This sand can relate of the
following form:
a. Common source with Emisor common.
b. Common drain with common
Manifold.
c. Common door with common Base.
Between his uses have it like Amplifier of
tension, Conmutador analog, digital Gate,
variable Resistance with the tension, Amplifier
of VHF with low distortion, In measurers of PH,
In electroencefalógrafos and in
electrocardiógrafos
Figure No 10. Example Use of the Transistor
Transistor MOSFET
The transistor of effect of field metal-oxide-
semiconductor or MOSFET (in English Metal-
oxide-semiconductor Field-effect transistor) is
a transistor used to amplify or
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commutate electronic signals. It is the most
used transistor in the industry microelectrónica,
already was in analog or digital circuits,
although the transistor of bipolar union was
much more popular in another time. Practically
the whole of the commercial microprocessors
are based in transistors MOSFET.
The MOSFET is a device of four terminals
called source (S, Source), drain (D, Drain), door
(G, Gate) and sustrato (B, Bulk). However, the
sustrato generally is connected internally to the
terminal of source and by this reason can find
devices MOSFET of three terminals.
Structure
With an operation and structure entirely
distinct to the bipolar transistor of union, the
transistor MOSFET was created when planting
an insulating layer in the surface of a
semiconductor and afterwards planting a
metallic electrode of door on the insulator. It
used crystalline silicon for the basic
semiconductor, and a layer of dioxide of
silicon created through thermal oxidation, as
insulating. The MOSFET of silicon did not
generate cheats of electrons located between the
interface, between the silicon and the layer of
native oxide, and by this reason saw free of the
dispersion and the blockade of bearers that
limited the exert of the transistors of effect of
previous field.
After the development of clean chambers to
reduce the levels of pollution, and of the
development of the fotolitografía as well as of
the planar process that allows to build circuits
in very few steps, the system If-SiO2 (silicious-
dioxide of silicon) obtained big importance
because of his low cost of production by each
circuit, and the ease of integration. Incidentally,
the method to join up two MOSFET
complementary (of channel N and channel P) in
a switch of low high/state, known like CMOS,
involved that the digital circuits dissipated a
very low quantity of power, except when they
are commutated. By these three factors, the
transistors MOSFET have turned into the
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device used more widely in the construction
of integrated circuits.
Operation
The MOSFET of enrichment which base in the
creation of a channel between the drain and the
source, when applying a tension in the door. The
tension of the door attracts minoritary bearers to
the channel, so that it forms a region of
investment, that is to say, a region with doped
opposite to the that had the sustrato originally.
The term enrichment does reference to the
increase of the electrical conductivity because
of an increase of the quantity of bearers of
load in the corresponding region to the channel.
The channel can form with an increase in the
concentration of electrons (in a nMOSFET or
NMOS), or hollow (in a pMOSFET or PMOS).
In this way a transistor NMOS builds with a
sustrato type p and has a channel of type n,
whereas a transistor PMOS builds with a
sustrato type n and has a channel of type p.
The MOSFET of impoverishment or
deplexión have a conductive channel in his state
of rest, that has to do disappear by means of the
application of the electrical tension in the door,
which ocasiona a decrease of the quantity of
bearers of load and a respective decrease of the
conductivity.
The operation of a transistor MOSFET can
divide in three different regions of operation,
depending on the tensions in his terminals. In
the present discussion uses an algebraic model
that it is valid for the ancient basic technologies,
and includes here with didactic ends. In the
MOSFET modern require computational
models that exhibit a much more complex
behaviour.
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1. Software Proteus

2. FuAndnte to Be able to 12VDC

3. Diode Emisor of Luz

4. Transistor Mosfet IRF630

5. Switch

Figure No 11. Mosfet In way Cut

Figure No 14. Simulation MOSFET in Proteus

Figure No 12. Mosfet In Linear Region

Figure No 13. Mosfet Region of Saturation Figure No 15. Simulation MOSFET in Proteus

Link Realisation video Simulation

Simulation of a Circuit with a Transistor Operation Unipolar Transistor MOSFET in
MOSFET Proteus

The simulation goes make so much with https://youtu.be/eoFeMsS2eoY

support of Software PROTEUS as with
elements and setting in physicist for his
verification in real time and comparison with
the simulation

Materialis and Methods

Virtual simulation

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Results Bibliography

The results of this investigation are Enderlein, R., & Horing, N. M. (1997).
launched once observed the phenomena in his “Insulator-Semiconductor junction in an
natural context, the information recolectada external voltage” in Fundamentals Of
supports to the recolección of variables and Semiconductor Physics And
analysis of his incidence and interrelationship in Devices. Singapore: World Scientific.
the areas of electronics and Retrieved
telecommunications. With this, express the fromhttp://bibliotecavirtual.unad.edu.co:2048/l
peculiar form in which the elements or Bipolar ogin?url=http://search.ebscohost.com/login.asp
and Unipolar devices in the matter comport . x?direct=true&db=And000xww&AN=82603&
lang=is&site=ehost-
The fundamental parameter that describes live&ebv=EB&ppid=pp_612
the characteristic of exit of the transistor is the
gain of current Levinshtein, M. And., Simin, G. S., &
Perelman, M. M. (1998). “Bipolar transistor”
The current and the tension of a transistor in Transistors From Crystals To Integrated
NPN goes in contrary sense to the one of PNP. Circuits. Singapore: World Scientific.
Retrieved
The polarisation of the transistors allows us from:http://bibliotecavirtual.unad.edu.co:2048/
define his use. login?url=http://search.ebscohost.com/login.as
px?direct=true&db=And000xww&AN=65768
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field of the scientific and technological live&ebv=EB&ppid=pp_169
development, given his wide versatility and his
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development. Perelman, M. M. (1998). “Field Effect
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unipolar device (an alone type of bearers). from:http://bibliotecavirtual.unad.edu.co:2048/
login?url=http://search.ebscohost.com/login.as
His manufacture is simpler, require lower px?direct=true&db=And000xww&AN=65768
space of integration and allow greater density of &lang=is&site=ehost-
components. live&ebv=EB&ppid=pp_199

Can connect like resistances of load, what MOSFET, Wikipedia, 2018, “Concepts of
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https://es.wikipedia.org/wiki/transistor_de_efe
cto_de_campo_metal-%C3%B3xido-
semiconductor

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