Mje243 253

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by MJE243/D
SEMICONDUCTOR TECHNICAL DATA

. . . designed for low power audio amplifier and low–current, high–speed switching
applications.

• High Collector–Emitter Sustaining Voltage —
*Motorola Preferred Device
VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253
• High DC Current Gain @ IC = 200 mAdc
hFE = 40 – 200 4 AMPERE
hFE = 40 – 120 — MJE243, MJE253 POWER TRANSISTORS
• Low Collector–Emitter Saturation Voltage — COMPLEMENTARY
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc SILICON
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• High Current Gain Bandwidth Product — 100 VOLTS
15 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 100 Vdc
Collector–Base Voltage VCB 100 Vdc
Emitter–Base Voltage VEB 7.0 Vdc
Collector Current — Continuous IC 4.0 Adc
Peak 8.0 CASE 77–08
TO–225AA
Base Current IB 10 Adc
Total Power Dissipation @ TC = 25_C PD 15 Watts
Derate above 25_C 0.12 W/ac
Total Power Dissipation @ TA = 25_C PD 1.5 Watts
Derate @ 25_C W/_C
0.012
Operating and Storage Junction TJ, Tstg – 65 to + 150 _C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case θJC 8.34 _C/W
Thermal Resistance, Junction to Ambient θJA 83.4 _C/W
16 1.6
PD, POWER DISSIPATION (WATTS)
PD, POWER DISSIPATION (WATTS)
12 1.2
TA
TC
8.0 0.8
4.0 0.4
0 0
20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage VCEO(sus) 100 — Vdc
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current ICBO µAdc
(VCB = 100 Vdc, IE = 0) — 0.1
(VCE = 100 Vdc, IE = 0, TC = 125_C)
— 0.1
Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO — 0.1 µAdc
ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 200 mAdc, VCE = 1.0 Vdc) 40 180
(IC = 1.0 Adc, VCE = 1.0 Vdc) 15 —
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 500 mAdc, IB = 50 mAdc) — 0.3
(IC = 1.0 Adc, IB = 100 mAdc) — 0.6
Base–Emitter Saturation Voltage VBE(sat) — 1.8 Vdc
(IC = 2.0 Adc, IB = 200 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎ VBE(on) — 1.5 Vdc
(IC = 500 mAdc, VCE = 1.0 Vdc)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product fT 40 — MHz
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance Cob — 50 pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
VCC
+ 30 V
1K
500
RC 300 tr
25 µs 200
+11 V SCOPE
RB
100
0
t, TIME (ns)
50
– 9.0 V 51 D1
30
20
tr, tf ≤ 10 ns td VCC = 30 V
–4 V 10
DUTY CYCLE = 1.0% IC/IB = 10
5 TJ = 25°C
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS NPN MJE243
3
D1 MUST BE FAST RECOVERY TYPE, e.g.: 2 PNP MJE253
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA 1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Switching Time Test Circuit Figure 3. Turn–On Time
2 Motorola Bipolar Power Transistor Device Data

1.0
r(t), TRANSIENT THERMAL RESISTANCE

0.7 D = 0.5
0.5
0.3 0.2
(NORMALIZED)
0.2 0.1
P(pk)
0.05 θJC(t) = r(t) θJC
0.1
θJC = 8.34°C/W MAX
0.07 D CURVES APPLY FOR POWER
0.02
0.05 PULSE TRAIN SHOWN
0.01 t1
READ TIME AT t1 t2
0.03
0 (SINGLE PULSE) TJ(pk) – TC = P(pk) θJC(t)
0.02 DUTY CYCLE, D = t1/t2
0.01
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
t, TIME (ms)
Figure 4. Thermal Response
10
100 µs There are two limitations on the power handling ability of a
5.0 500 µs
transistor: average junction temperature and second break-
IC, COLLECTOR CURRENT (AMP)
2.0 1.0 ms down. Safe operating area curves indicate IC – VCE limits of
1.0
the transistor that must be observed for reliable operation;
dc
TJ = 150°C i.e., the transistor must not be subjected to greater dissipa-
0.5 tion than the curves indicate.
BONDING WIRE LIMITED
THERMALLY LIMITED @ 5.0 ms The data of Figure 5 is based on T J(pk) = 150_C; TC is
0.2
TC = 25°C (SINGLE PULSE) variable depending on conditions. Second breakdown pulse
0.1 SECOND BREAKDOWN LIMITED limits are valid for duty cycles to 10% provided T J(pk)
0.05 CURVES APPLY BELOW
RATED VCEO
v 150 _ C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
0.02 reduce the power that can be handled to values less than the
MJE243/MJE253 limitations imposed by second breakdown.
0.01
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
10K 200
5K VCC = 30 V TJ = 25°C
3K ts IC/IB = 10
2K IB1 = IB2 100
C, CAPACITANCE (pF)
TJ = 25°C Cib
1K 70
t, TIME (ns)
500
50
300
200
30
100
50 Cob
20
30 tf MJE243 (NPN)
20 NPN MJE243
PNP MJE253 MJE253 (PNP)
10 10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn–Off Time Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data 3

NPN PNP
MJE243 MJE253
500 200
TJ = 150°C VCE = 1.0 V TJ = 150°C VCE = 1.0 V
300 VCE = 2.0 V
VCE = 2.0 V 100
200
70 25°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN

25°C 50
100
– 55°C – 55°C
70 30
50 20
30
10
20
7.0
5.0
10
7.0 3.0
5.0 2.0
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
1.4 1.4
TJ = 25°C TJ = 25°C
1.2 1.2
1.0 1.0
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
0.8 VBE(sat) @ IC/IB = 10 0.8
0.6 VBE @ VCE = 1.0 V 0.6 VBE @ VCE = 1.0 V
0.4 IC/IB = 10 0.4 IC/IB = 10

5.0 5.0
0.2 0.2
VCE(sat) VCE(sat)
0 0
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
Figure 9. “On” Voltages
+ 2.5 + 2.5
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
+ 2.0 *APPLIES FOR IC/IB ≤ hFE/3 + 2.0 *APPLIES FOR IC/IB ≤ hFE/3
+ 1.5 + 1.5
+ 1.0 + 1.0 25°C to 150°C
+ 0.5 25°C to 150°C + 0.5 *θVC FOR VCE(sat)
*θVC FOR VCE(sat)
0 0
– 55°C to 25°C – 55°C to 25°C
– 0.5 – 0.5
– 1.0 25°C to 150°C – 1.0 25°C to 150°C
– 1.5 – 1.5
θVB FOR VBE
θVB FOR VBE – 55°C to 25°C – 55°C to 25°C
– 2.0 – 2.0
– 2.5 – 2.5
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
Figure 10. Temperature Coefficients

PACKAGE DIMENSIONS
–B–
NOTES:
U F C 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
Q 2. CONTROLLING DIMENSION: INCH.
M
–A– INCHES MILLIMETERS
DIM MIN MAX MIN MAX
1 2 3 A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
H D 0.020 0.026 0.51 0.66
K F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
V J M 5 _ TYP 5 _ TYP
Q 0.148 0.158 3.76 4.01
G R R 0.045 0.055 1.15 1.39
S 0.025 0.035 0.64 0.88
S 0.25 (0.010) M A M B M
U 0.145 0.155 3.69 3.93
V 0.040 ––– 1.02 –––
D 2 PL
0.25 (0.010) M A M B M STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–08
TO–225AA
ISSUE V
Motorola Bipolar Power Transistor Device Data 5

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:

USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
*MJE243/D*
◊ MJE243/D

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Figure 1. Power Derating

 Motorola, Inc. 1995 1

Figure 2. Switching Time Test Circuit Figure 3. Turn–On Time

2 Motorola Bipolar Power Transistor Device Data

r(t), TRANSIENT THERMAL RESISTANCE

Figure 4. Thermal Response

Figure 5. Active Region Safe Operating Area

Figure 6. Turn–Off Time Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data 3

hFE , DC CURRENT GAIN

0.6 VBE @ VCE = 1.0 V 0.6 VBE @ VCE = 1.0 V

0.4 IC/IB = 10 0.4 IC/IB = 10

θV, TEMPERATURE COEFFICIENTS (mV/ °C)

4 Motorola Bipolar Power Transistor Device Data

Motorola Bipolar Power Transistor Device Data 5

How to reach us:

6 Motorola Bipolar Power Transistor Device Data

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Mje243 253

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Figure 1. Power Derating

 Motorola, Inc. 1995 1

Figure 2. Switching Time Test Circuit Figure 3. Turn–On Time

2 Motorola Bipolar Power Transistor Device Data

r(t), TRANSIENT THERMAL RESISTANCE

Figure 4. Thermal Response

Figure 5. Active Region Safe Operating Area

Figure 6. Turn–Off Time Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data 3

hFE , DC CURRENT GAIN

0.6 VBE @ VCE = 1.0 V 0.6 VBE @ VCE = 1.0 V

0.4 IC/IB = 10 0.4 IC/IB = 10

θV, TEMPERATURE COEFFICIENTS (mV/ °C)

4 Motorola Bipolar Power Transistor Device Data

Motorola Bipolar Power Transistor Device Data 5

How to reach us:

6 Motorola Bipolar Power Transistor Device Data

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