Cree® Direct Attach™ DA1000™ LEDs

CxxxDA1000-Sxxx00-2-G
Data Sheet

Cree’s DA™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with

Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the general-illumination

market. The DA LEDs are among the brightest in the lighting market while delivering a low forward voltage, resulting

in a very bright and highly efficient solution. The bondpad-down configuration is designed for a flux eutectic die-attach

process, eliminating the need for wire bonds, and enables superior performance from improved thermal management.

FEATURES APPLICATIONS

• Direct Attach LED Technology • General Illumination

• Rectangular LED RF Performance − Aircraft
– 445-475 nm – 485+ mW − Decorative Lighting
– 527 nm – 200+ mW − Task Lighting
• High Reliability - Eutectic Attach − Outdoor Illumination
• Low Forward Voltage (Vf) – 3.15 V Typical at 350 mA • White LEDs
• Maximum DC Forward Current – 1000 mA • Camera Flash
• Junction-Down for Improved Thermal Management • Projection Displays
• No Wire Bonds Required • Automotive

CxxxDA1000-Sxxx00-2-G Chip Diagram

Anode (+), 915 x 75 µm

1000 x 1000 µm Gap 70 µm

C

Cathode (-), 890 x 795 µm

CPR3ES Rev

Thickness, 335 µm
Data Sheet:

Top View Side View Bottom View

Subject to change without notice.

1
www.cree.com
 Maximum Ratings at TA = 25°C Notes 1,2 & 3 CxxxDA1000-Sxxx00-2-G
DC Forward Current 1000 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz) 1500 mA
LED Junction Temperature 150°C
Reverse Voltage 5V
Operating Temperature Range -40°C to +100°C
LED Chip Storage Temperature -40°C to +120°C
Recommended Die Sheet Storage Conditions ≤30°C / ≤85% RH

Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Note 2

Reverse Current Full Width Half Max

Part Number Forward Voltage (Vf, V)
[I(Vr=5V), μA] (λD, nm)

Min. Typ. Max. Max. Typ.

C450DA1000-Sxxx00-2-G 2.9 3.15 3.4 2 20
C460DA1000-Sxxx00-2-G 2.9 3.15 3.4 2 21
C470DA1000-Sxxx00-2-G 2.9 3.15 3.4 2 22
C527DA1000-Sxxx00-2-G 3.0 3.3 3.6 2 35

Mechanical Specifications CxxxDA1000-Sxxx00-2-G

Description Dimension Tolerance
P-N Junction Area (μm) 960 x 960 ±35
Chip Bottom Area (μm) 1000 x 1000 ±35
Chip Top Area (μm) 630 x 630 ±45
Chip Thickness (μm) 335 ±25
Bond Pad Width – Anode (um) 75 ±15
Bond Pad Length – Anode (um) 915 ±35
Bond Pad Width – Cathode (um) 795 ±35
Bond Pad Length – Cathode (um) 890 ±35
Bond Pad Gap (μm) 70 ±15
Bond Pad Thickness (μm) 3 ±0.5

Notes:
1. Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone
encapsulation and flux eutectic die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2. All products conform to the listed minimum and maximum specifications
for electrical and optical characteristics when assembled and operated at 1200
350 mA within the maximum ratings shown above. Efficiency decreases
at higher currents. Typical values given are within the range of average
1000
values expected by manufacturer in large quantities and are provided
Maximum Forward Current (mA)

for information only. All measurements were made using lamps in T-1¾
packages (with Hysol OS4000 epoxy encapsulant and flux eutectic die 800
attach). Optical characteristics measured in an integrating sphere using
Illuminance E.
600
3. The maximum forward current is determined by the thermal resistance
between the LED junction and ambient. It is crucial for the end-product Rth j-a = 10 C/W
to be designed in a manner that minimizes the thermal resistance from 400 Rth j-a = 15 C/W
the LED junction to ambient in order to optimize product performance.
Rth j-a = 20 C/W
200 Rth j-a = 25 C/W

0
25 50 75 100 125 150 175

Ambient Temperature (C)

Cree, Inc.
4600 Silicon Drive
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo ®
Durham, NC 27703-8475
are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
2 CPR3ES Rev C
Standard Bins for CxxxDA1000-Sxxx00-2-G

LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxDA1000-Sxxxxx-2-G) orders may be filled with any or all bins (CxxxDA1000-xxxx-2-G)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA.

C450DA1000-S48500-2-G

C450DA1000-0325-2-G C450DA1000-0326-2-G C450DA1000-0327-2-G C450DA1000-0328-2-G

Radiant Flux (mW)

625
C450DA1000-0321-2-G C450DA1000-0322-2-G C450DA1000-0323-2-G C450DA1000-0324-2-G
585
C450DA1000-0317-2-G C450DA1000-0318-2-G C450DA1000-0319-2-G C450DA1000-0320-2-G
550
C450DA1000-0313-2-G C450DA1000-0314-2-G C450DA1000-0315-2-G C450DA1000-0316-2-G
515
C450DA1000-0309-2-G C450DA1000-0310-2-G C450DA1000-0311-2-G C450DA1000-0312-2-G
485
445 447.5 450 452.5 455

Dominant Wavelength (nm)

C460DA1000-S48500-2-G

C460DA1000-0325-2-G C460DA1000-0326-2-G C460DA1000-0327-2-G C460DA1000-0328-2-G

Radiant Flux (mW)

625
C460DA1000-0321-2-G C460DA1000-0322-2-G C460DA1000-0323-2-G C460DA1000-0324-2-G

585
C460DA1000-0317-2-G C460DA1000-0318-2-G C460DA1000-0319-2-G C460DA1000-0320-2-G

550
C460DA1000-0313-2-G C460DA1000-0314-2-G C460DA1000-0315-2-G C460DA1000-0316-2-G

515
C460DA1000-0309-2-G C460DA1000-0310-2-G C460DA1000-0311-2-G C460DA1000-0312-2-G

485
455 457.5 460 462.5 465

Dominant Wavelength (nm)

Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp.

Cree, Inc.
4600 Silicon Drive
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo
®
Durham, NC 27703-8475
are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
3 CPR3ES Rev C
Standard Bins for CxxxDA1000-Sxxxx00-2-G

LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxDA1000-Sxxxxx-2-G) orders may be filled with any or all bins (CxxxDA1000-xxxx-2-G)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA.

C470DA1000-S48500-2-G
Radiant Flux (mW)

C470DA1000-0321-2-G C470DA1000-0322-2-G C470DA1000-0323-2-G C470DA1000-0324-2-G

585
C470DA1000-0317-2-G C470DA1000-0318-2-G C470DA1000-0319-2-G C470DA1000-0320-2-G

550
C470DA1000-0313-2-G C470DA1000-0314-2-G C470DA1000-0315-2-G C470DA1000-0316-2-G

515
C470DA1000-0309-2-G C470DA1000-0310-2-G C470DA1000-0311-2-G C470DA1000-0312-2-G

485
465 467.5 470 472.5 475

Dominant Wavelength (nm)

C527DA1000-S20000-2-G
Radiant Flux (mW)

C527DA1000-0216-2-G C527DA1000-0217-2-G C527DA1000-0218-2-G

275
C527DA1000-0213-2-G C527DA1000-0214-2-G C527DA1000-0215-2-G

250
C527DA1000-0210-2-G C527DA1000-0211-2-G C527DA1000-0212-2-G

225
C527DA1000-0207-2-G C527DA1000-0208-2-G C527DA1000-0209-2-G

200
520 525 530 535

Dominant Wavelength (nm)

Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp.

Cree, Inc.
4600 Silicon Drive
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo
®
Durham, NC 27703-8475
are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
4 CPR3ES Rev C
Characteristic Curves

These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.

Relative Intensity vs. Forward Current Relative Light Intensity Vs Junction Temperature
300% 100%
Relative Light Intensity

Relative Light Intensity

250% 95%
200% 90%
85%
150%
80%
100%
75%
50% 70%
0% 65%
0 250 500 750 1000 1250 1500 25 50 75 100 125 150
If (mA) Junction Temperature (°C)

Wavelength Shift vs. Forward Current Dominant Wavelength Shift Vs Junction Temperature
12 6
9
5
DW Shift (nm)

6
DW Shift (nm)

3 4
0 3
-3
2
-6
-9 1
-12 0
0 250 500 750 1000 1250 1500 25 50 75 100 125 150
If (mA) Junction Temperature (°C)

Forward Current vs. Forward Voltage Voltage Shift Vs Junction Temperature

1500 0.000
-0.050
1250
Voltage Shift (V)

-0.100
1000
-0.150
If (mA)

750 -0.200
-0.250
500
-0.300
250
-0.350
0 -0.400
2 2.5 3 3.5 4 4.5 5 25 50 75 100 125 150
Vf (V) Junction Temperature (°C)

Cree, Inc.
4600 Silicon Drive
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo ®
Durham, NC 27703-8475
are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
5 CPR3ES Rev C
Radiation Pattern

This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip.

Cree, Inc.
4600 Silicon Drive
© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo
®
Durham, NC 27703-8475
are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
6 CPR3ES Rev C