1990 TI Optoelectronics Data Book

~ TEXAS
INSTRUMENTS
Optoelectronics and
Image Sensors
CCD Sensors, Optocouplers, IR Emitters,
Intelligent Displays, and Phototransistors
1990 1990 Linear Products

Linear Products Data Book Guide
Data Book Contents Document No.
• Linear Circuits Vol Operational Amplifiers SLYD003

Amplifiers, Comparators, Voltage Comparators 1989
and Special Functions Video Amplifiers
Hall-Effect Devices
Timers and Current Mirrors
Magnetic-Memory Interface
Frequency-to-Voltage Converters
Sonar Ranging Circuits/Modules
Sound Generators
• Linear Circuits Vol 2 A/D and D/A Converters SLYD004

Data Acquisition DSP Analog Interface 1989
and Conversion Analog Switches and Multiplexers
Switched-Capacitor Filters
• Linear Circuits Vol 3 Supervisor Functions SLYD005

Voltage Regulators and Series-Pass Voltage Regulators 1989
Supervisors Shunt Regulators
Voltage References
DC-to-DC Converters
PWM Controllers
• Telecommunications Equipment Line Interfaces SCTD001A

Circuits Subscriber Line Interfaces 1988/89
Modems and Receivers/Transmitters
Ringers, Detectors, Tone Encoders
PCM Interface
Transient Suppressors
• Optoelectronics and Optocouplers SOYD002A

Image Sensors CCD Image Sensors and Support 1990
Phototransistors
IR-Emitting Diodes
Hybrid Displays
• Interface Circuits High-Voltage (Display) Drivers SLYD002

High-Power (Peripheral/Motor) Drivers 1987
Line Drivers, Receivers, Transceivers
EIA RS-232, RS-422, RS-423, RS-485
IBM 360/370, IEEE 802.3, CCITT
Military Memory Interface
• Speech System Manuals TSP50C4X Family SPSS010

1990
November 1989
I~_G_e_n_e_ra_I_I_n_fo_r_m_a_t_io_n
____________________ ~I_1II
CCD Image Sensors and Support Functions
Optocouplers (Isolators)
Intelligent LED Displays
Infrared Emitters and Phototransistors
Quality and Reliability
Applications
Optoelectronics
and Image Sensors
Data Book
1990
CCD Image Sensors, Optocouplers,

Intelligent Displays, IR Emitters,
and Phototransistors
~
TEXAS
INSTRUMENTS
IMPORTANT NOTICE
Texas Instruments (TI) reserves the right to make changes to or to
discontinue any semiconductor product or service identified in this
publication without notice. TI advises its customers to obtain the latest
version of the relevant information to verify. before placing orders.
that the information being relied upon is current.
TI warrants performance of its semiconductor products to current
specifications in accordance with TI's standard warranty. Testing and
other quality control techniques are utilized to the extent TI deems
necessary to support this warranty. Unless mandated by government
requirements. specific testing of all parameters of each device is not
necessarily performed.
TI assumes no liability for TI applications assistance. customer product
design. software performance. or infringement of patents or services
described herein. Nor does TI warrant or represent that any license.
either express or implied. is granted under any patent right. copyright.
mask work right. or other intellectual property right of TI covering or
relating to any combination. machine. or process in which such
semiconductor products or services might be or are used.
Information contained in this data book supersede all data for this
technology published by TI in the United States before January 1990.
Copyright © 1990. Texas Instruments Incorporated

INTRODUCTION
This data book presents the three major categories of Optoelectronic and Image Sensing devices that Texas
Instruments now offers to the Military, Computer, Industrial, and Consumer electronics markets. These categories
are:
• CCD Linear Image Sensors

• Optocouplers/Optoisolators
• Intelligent LED Displays
The CCD Image Sensor product line offers a range of linear sensors from an organization of 128 x 1 to
3456 x 1. The product family utilizes TI's patented Virtual Phase technology to minimize the number of clock
electrodes required by the imager, resulting in simpler external circuitry requirements and improved performance.
The Optocoupler/Optoisolator devices are offered in metal-can and plastic dual-in-line (P-DIP) packages, JEDEC-
registered metal cans provide transistor output functions. All of TI's Optocoupler/Optoisolator P-DIPs are UL
recognized and provide functions such as logic gates, triac, and transistor/Darlington outputs.
The Intelligent red LED Displays are plastic-encapsulated dual-in-line packages that contain TTL-compatible on-
board electronics to decode input signals and provide constant current to each LED.
This data book also contains information on hermetically sealed standard Pill package Infrared Emitters and
Phototransistors.
A selection guide, located in Section 1, lists the important electrical parameters and features. The glossary
describes the symbols, abbreviations, terms, and definitions. Included is a cross-reference table listing other
manufacturers with the direct or nearest replacement devices. The contents provides easy location of major
information in the general information, quality and reliability, and applications sections. The alphanumeric index
lists page numbers for all the device types. The detailed data sheets complete the salient features of the data book.
While this volume offers design and specification data only for Optoelectronic and Image Sensing components,
complete technical information for all TI semiconductor products are available from your nearest TI Field Sales
Office, local authorized TI distributor, or by writing directly to:
Texas Instruments Incorporated

LITERATURE RESPONSE CENTER
P. O. Box 809066
Dallas, Texas 75380-9066
We sincerely feel that you will discover this new 1990 Optoelectronics and Image Sensor Data Book to be a
significant addition to your collection of technical literature.
v
vi
General Information
CCD Image ..8ensorsand .SupportFunctioris
OptocQuplers . (lsoIators)
UtJI8Ul[V ctncl·. . Sefiability
1-1
Contents
Page
Table of Contents . . . . ............... ... .... ...... .. . . .. . . . .. 1-3
Alphanumeric Index. . . ............... .. ..... ...... . . . . .. . . . .. 1-5
Quick Reference Guide ............................ _. . . _. . . . .. 1-7
Cross-Reference Guide. ... .......... .... ..... ...... .. . . .. . . . .. 1-1 5
Glossary . . . . . . . . . . . .. .......... .... ...... ...... .. . . .. . . . .. 1-27
-....
:::s
...o
3Q)
....
o·
:::s
1-2
Contents
Page
Section 1
General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-3
..
Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-5
Quick Reference Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-7 C
0
Cross-Reference Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-15 "
as
Glossary
Section 2
CCO Image Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1-27
2-1
.
E
....0C
Virtual Phase Image Sensing Technoloy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
-as
TC102 128 x 1 CCD Linear Image Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC102-1 128x 1 CCD Linear Image Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC 103 2048 x 1 CCD Linear Image Sensor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
.
.
2-5
2-17
2-29
..
CD
C
TC103-1 2048 x 1 CCD Linear Image Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-41 CD
TC104 3456 x 1 CCD Linear Image Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-53 ~
TC104-1 3456x 1 CCD Linear Image Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-65
TC106-1 2592x1 CCD Linear Image Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-77
TL 1591 Sample & Hold Driver Circuit for CCD Imagers .................... . 2-89
TLD369 Dual CCD Image-Sensor Clock Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-93
Section 3
Optocouplers (Isolators) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1
3N261, 3N262, 3N263 Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-3
4N22, 4N23, 4N24 Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-9
4N22A, 4N23A, 4N24A Optocouplers ...... , . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-13
JAN, JANTX, JANTXV Processing for 4N22-4N24 and 4N22A-4N24A ........ . 3-17
4N25, 4N26, 4N27, 4N28 Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-19
JAN, JANTX, JANTXV Processing for 4N47-4N49 ........................ . 3-31
6N 135, 6N 136, HCPL4502 Optocouplers/Optoisolators .................... . 3-33
6N 137 Optocoupler/Optoisolator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-41
6N 138, 6N 139 Optocouplers/Optoisolators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-49
HCPL2502 Optocoupler/Optoisolator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-59
HCPL2530, HCPL2531 Optocouplers/Optoisolators ........................ . 3-67
HCPL2601 Optocoupler/Optoisolator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-75
HCPL2630 Dual-Channel Optocoupler/Optoisolator ........................ . 3-83
HCPL2631 Dual-Channel Optocoupler/Optoisolator ........................ . 3-91
HCPL2730, HCPL2731 Dual-Channel Optocouplers/Optoisolators ............. . 3-99
MCT2, MCT2E Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-109
MOC3009 thru MOC3012 Optocouplers/Optoisolators ..................... . 3-113
MOC3020 thru MOC3023 Optocouplers/Optoisolators ..................... . 3-119
OPI8012 thru OPI8015 Optocouplers/Optoisolators ....................... . 3-125
TIL 102, TIL 103 Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-133
TIL 111, TIL 114, TIL116, TIL 117 Optocouplers. . . . . . . .. . ...... . 3-137
TIL 113, TIL 119A Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-143
TIL 118-1,-2,-3 Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-147
TIL120, TIL 121 Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-151
TIL 124, TIL 125, TIL 126 Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-155
1-3
Page
Section 3 (Continued)
TIL127, TIL128A Optocouplers ................................ , " .... 3-161
TIL153, TIL154, TIL155 Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 3-165
TIL156, TIL 157A Optocouplers ....................................... 3-171
TIL181 Optocoupler. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 3-175
TIL186-1,-2,-3,-4, AC-Input Optocouplers ............................... 3-179
TIL187-1,-2,-3,-4, AC Input Optocouplers/Optoisolators . . . . . . . . . . . . . . . . . . . .. 3-185
C) TIL 188-1,-2,-3,-4, AC Input Optocouplers/Optoisolators . . . . . . . . . . . . . . . . . . . .. 3-185
CD TIL189-1,-2,-3,-4, Optocouplers/Optoisolators ... . . . . . . . . . . . . . . . . . . . . . . . .. 3-191
.e.
::::J
CD
TIL190-1,-2,-3,-4, Optocouplers/Optoisolators ... . . . . . . . . . . . . . . . . . . . . . . . ..
TIL191, A&B, TIL192, A&B, TIL193, A&B Optocouplers ....................
TIL 194, A&B, TIL 195, A&B, TIL 196, A&B AC-Input Optocouplers . . . . . . . . . . . ..
3-191
3-197
3-203
TIL3009 th'ru TIL3012 Optocouplers/Optoisolators . . . . . . . . . . . . . . . . . . . . . . . .. 3-207
....S"o
..3 TIL3020 thru TIL3023 Optocouplers/Optoisolators . . . . . . . . . . . . . . . . . . . . . . . ..
Section 4
Intelligent LED Displays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
3-213
4-1
CI)
r+ TIL302, TIL302A thru TIL304, TIL304A Numeric Displays . . . . . . . . . . . . . . . . . .. 4-3
o· TIL305 5 x 7 Alphanumeric Displays. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-9
::::J TIL306, TIL306A. TIL307, TIL307A Numeric Displays with Logic .............. 4-11
TIL308, TIL308A, TIL309, TIL309A Numeric Displays with Logic. . . . . . . . . . . . .. 4-17
TIL311, TIL311 A Hexadecimal Displays Logic ............................ 4-23
Section 5
Infrared Emitters and Phototransistors .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 5-1
1 N5722 thru 1 N5725 N-P-N Planar Silicon Phototransistors . . . . . . . . . . . . . . . . .. 5-3
TIL23, TIL24, TIL25 P-N Gallium Arsenide Infrared-Emitting Diodes ............. 5-7
TIL24HR2 High-Reliability Processing and Lot Acceptance ................... 5-11
TIL131 thru TIL 133 9-Element Arrays .................................. 5-13
TIL 134 thru TIL136 12-Element Arrays ................................. 5-19
TIL601 thru TIL604, LS600, LS602, LS611 thru LS619 N-P-N Planar Silicon
Phototransistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 5-25
TIL604HR2 High-Reliability Processing and Lot Acceptance .................. 5-33
Section 6
Quality and Reliability .............................................. 6-1
Quality/Reliability Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 6-3
Optocoupler Reliability Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 6-9
Section 7
Applications ..................................................... 7-1
Applications Summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-3
Multiplexing Displays. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-5
TIL311 Hexadecimal LED Display ...................................... 7-11
Counting Circuits Using TIL306 and TIL308 Displays ....................... 7-13
Optocouplers in Circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-19
Interfacing Using Optocouplers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-25
CCD Output Signal Processing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-33
Linear CCD Operation at 10 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-49
Operating Instruction Set for Linear CCD Image Sensor ..................... 7-59
A Simple Method of Conditioning the Output of a CCD Imager to a
Digital System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-65
TC103-ISM and Interfacing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-67
1-4
ALPHANUMERIC INDEX
TYPE PAGE TYPE PAGE

lN5722 ......................... . 5-3 JANTX4N47 ..................... . 3-31
lN5723 ......................... . 5-3 JANTX4N48 ..................... . 3-31
lN5724 ......................... . 5-3 JANTX4N49 ..................... . 3-31
lN5725 ......................... . 5-3 JANTXV4N22 .................... . 3-17
3N261 .......................... . 3-3 JANTXV4N22A ................... . 3-17
3N262 .......................... . 3-3 JANTXV4N23 ..... '............... . 3-17
~2~ .......................... . 3-3 JANTXV4N23A ................... . 3-17
4N22 ........................... . 3-9 JANTXV4N24 .............. : ..... . 3-17
4N22A .......................... . 3-13 JANTXV4N24A ................... . 3-17 r:::
4N23 ........................... . 3-9 JANTXV4N47 .................... . 3-31 0
4N23A .......................... . 3-13 JANTXV4N48 .................... . 3-31 '+:;
4N24 ........................... . 3-9 JANTXV4N49 .................... . 3-31
ca
4N24A .......................... . 3-13 LS600 .......................... . 5-25 E
...
4N25 ...........................
4N26 ...........................
.
.
3-19
3-19
LS602 ..........................
LS611 ..........................
.
.
5-25
5-25
....0r:::
4N27 ........................... . 3-19 LS612 .......................... . 5-25
4N28 ...........................
4N35 ...........................
.
.
3-19
3-21
LS613 ..........................
LS614 ..........................
.
.
5-25
5-25
...
C6
Q)
4N36 ........................... . 3-21 LS615 .......................... . 5-25 r:::
Q)
4N37 ........................... . 3-21 LS616 .......................... . 5-25
4N47 ........................... . 3-25 LS617 .......................... . 5-25 C!1
4N48 ........................... . 3-25 LS618 .......................... . 5-25
4N49 ........................... . 3-25 LS619 .......................... . 5-25
6N135 .......................... . 3-33 MCT2 .......................... . 3-109
6N136 .......................... . 3-33 MCT2E ......................... . 3-109
6N137 .......................... . 3-41 MOC3009 ....................... . 3-113
6N138 .......................... . 3-49 MOC3010 ....................... . 3-113
6N139 .......................... . 3-49 MOC3011 ....................... . 3-113
HCPL2502 ....................... . 3-59 MOC3012 ....................... . 3-113
HCPL2530 ....................... . 3-67 MOC3020 ....................... . 3-119
HCPL2531 ....................... . 3-67 MOC3021 ....................... . 3-119
HCPL2601 ....................... . 3-75 MOC3022 ....................... . 3-119
HCPL2630 ....................... . 3-83 MOC3023 ....................... . 3-119
HCPL2631 ....................... . 3-91 OPI8012 .................. . 3-125
HCPL2730 ....................... . 3-99 OPI8013 ........................ . 3-125
HCPL2731 ....................... . 3-99 OP18014 ......................... . 3-125
HCPL4502 ....................... . 3-33 OPI8015 ........................ . 3-125
JAN4N22 ........................ . 3-17 PC401 .......................... . 7-59
JAN4N22A ...................... . 3-17 PC402 .......................... . 7-59
JAN4N23 ........................ . 3-17 TC102 .......................... . 2-5
JAN4N23A ...................... . 3-17 TC102-1 ........................ . 2-17
JAN4N24 ........................ . 3-17 TC103 .......................... . 2-29
JAN4N24A ...................... . 3-17 TC103-1 ........................ . 2-41
JAN4N47 ........................ . 3-31 TC104 .......................... . 2-53
JAN4N48 ........................ . 3-31 TC104-1 ........................ . 2-65
JAN4N49 ........................ . 3-31 TC106-1 ........................ . 2-77
JANTX4N22 ..................... . 3-17 TCK102 ......................... . 7-59
JANTX4N22A .................... . 3-17 TCK103 ......................... . 7-59
JANTX4N23 ..................... . 3-17 TCK104 ......................... . 7-59
JANTX4N23A .................... . 3-17 TCK106-1 ....................... . 7-59
JANTX4N24 ..................... . 3-17 TIL102 .......................... . 3-133
JANTX4N24A .................... . 3-17 TIL103 .......................... . 3-133
TEXAS ~ 1-5
INSTRUMENTS
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ALPHANUMERIC INDEX
TYPE PAGE TYPE PAGE

TILlll .......................... . 3-137 TIL192A ......................... 3-197
TIL 113 .......................... . 3-143 TIL192B ............ " ............ 3-197
TILl14 .......................... . 3-137 TIL193 ........................... 3-197
TILl16 .......................... . 3-137 TIL193A ......................... 3-197
TILl17 .................... '" .. " 3-137 TIL 193B . . . . . . . . . . . . . . . . . . . . . . . . .. 3-197
TILl18 .......................... . 3-147 TIL 194 . . . . . . . . . . . . . . . . . . . . . . . . . .. 3-203
TILl19A ........................ . 3-143 TIL 194A ......................... 3-203
TIL120 ...................... , ... . 3-151 TIL 194B . . . . . . . . . . . . . . . . . . . . . . . . .. 3-203
G) TIL 121 .......................... . 3-151 TIL 195 . . . . . . . . . . . . . . . . . . . . . . . . . .. 3-203
CD TIL 124 .......................... . 3-155 TIL 195A ......................... 3-203
~ TIL 125 .......................... . 3-155 TIL195B .......................... 3-203
~ TIL126 .......................... . 3-155 TIL 196 . . . . . . . . . . . . . . . . . . . . . . . . . .. 3-203
~ TIL127 .......................... . 3-161 TIL 1 96A ......................... 3-203
ao TIL 128A ........................ .

TIL131 .......................... .
3-161
5-13
TIL196B ..........................
TIU3 ............................
3-203
5~
...3 TIL132 .......................... .

TIL 133 .......................... .
5-13
5-13
TIL24 ............................
TIL24HR2 ........................
5-7
5-11
Q) TIL 134 .......................... . 5-19 TIL25 ............................ 5-7
.... TIL135 .......................... . 5-19 TIL302 ........................... 4-3
O' TIL 136 .......................... . 5-19 TIL302A ......................... 4-3
~ TIL 153 .......................... . 3-165 TIL303 ........................... 4-3
TIL154 .......................... . 3-165 TIL303A ......................... 4-3
TIL 155 .......................... . 3-165 TIL304 ........................... 4-3
TIL156 .......................... . 3-171 TIL304A ......................... 4-3
TIL157A ........................ . 3-171 TIL305 ........................... 4-9
TIL181 .......................... . 3-175 TIL306 ........................... 4-11
TIL186-1 ........................ . 3-179 TIL306A ......................... 4-11
TIL186-2 ........................ . 3-179 TIL307 ........................... 4-11
TIL186-3 ........................ . 3-179 TIL307A ......................... 4-11
TIL186-4 ........................ . 3-179 TIL308 ........................... 4-17
TIL187-1 ........................ . 3-185 TIL308A ......................... 4-17
TIL187-2 ........................ . 3-185 TIL309 . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-17
TIL187-3 ........................ . 3-185 TIL309A ......................... 4-17
TIL 187-4 ........................ . 3-185 TIL311 ........................... 4-23
TIL188-1 ........................ . J-185 TIL311A ......................... 4-23
TIL 188-2 ........................ . 3-185 TIL601 . . . . . . . . . . . . . . . . . . . . . . . . . .. 5-25
TIL 188-3 ........................ . 3-185 TIL602 . . . . . . . . . . . . . . . . . . . . . . . . . .. 5-25
TIL 188-4 ........................ . 3-185 TIL603. . . . . . . . . . . . . . . . . . . . . . . . . .. 5-25
TIL189-1 ........................ . 3-191 TIL604 . . . . . . . . . . . . . . . . . . . . . . . . . .. 5-25
TIL 189-2 ........................ . 3-191 TIL604HR2 ....................... 5-33
TIL189-3 ........................ . 3-191 TIL3009 . . . . . . . . . . . . . . . . . . . . . . . . .. 3-207
TIL189-4 ........................ . 3-191 TIL3010 .......................... 3-207
TIL190-1 ........................ . 3-191 TIL3011 . . . . . . . . . . . . . . . . . . . . . . . . .. 3-207
TIL190-2 ........................ . 3-191 TIL3012 . . . . . . . . . . . . . . . . . . . . . . . . .. 3-207
TIL190-3 ........................ . 3-191 TIL3020 . . . . . . . . . . . . . . . . . . . . . . . . .. 3-213
TIL 190-4 ........................ . 3-191 TIL3021 .......................... 3-213
TIL191 .......................... . 3-197 TIL3022 .......................... 3-213
TIL191A ........................ . 3-197 TIL3023 . . . . . . . . . . . . . . . . . . . . . . . . .. 3-213
TIL191B ......................... . 3-197 TL 1591 .......................... 2-89
TIL192 .......................... . 3-197 TLD369 . . . . . . . . . . . . . . . . . • . . . . . . .. 2-93
1-6 TEXAS ."

INSTRUMENTS
OPTOELECTRONICS AND IMAGE SENSORS
QUICK REFERENCE GUIDE
linear arrays
PAGE
TYPE PIXELS PIXEL SIZE SENSITIVITY PACKAGE
NO.
TC102 t 128 x 1 12.7~mx 12.7 ~m 3.5 V I ~J/cm2 10-pin CDIP 10.300 inl 2-5
TC102-1 ~ 128 x 1 12.7~m x 12.7 ~m 3.5 V/~J/cm2 10-pin CDIP 10.300 inl 2-17
TC103' 2048 x 1 12.7 ~m x 12.7 ~m 3.5 V/~J/cm2 24-pin CDIP 10.600 inl 2-29
TC103-1~ 2048 x 1 12.7 ~m x 12.7 ~m 3.5 V/~J/cm2 24-pin CDIP 10.600 inl 2-41
TC104' 3456 x 1 10.7 ~m x 10.7 ~m 2.0 V/~J/cm2 24-pin CDIP 10.600 inl 2-53
TC104-1 ~ 3456 x 1 10.7 ~m x 10.7 ~m 2.0 V/~J/cm2 24-pin CDIP 10.600 inl 2-65
TC106-1 ~ 2592 x 1 10.7 ~m x 10.7 ~m 2.0 V/~J/cm2 24-pin CDIP 10.600 inl 2-77 I:
o
t Minimum and typical values of Write Reference (WRI and End of Scan (EOS) are specified. "';:
:t: Typical values of WR and EOS are specified. ctI
E
...
evaluation boards
....
o
PART NO. DEVICE EVALUATED REMARKS
PAGE
NO.
.5
PC401
TC103, TC103-1, TC104,
TC104-1 and TC106-1
Device socket fits TC103, TC103-1, TC104, TC104-1, and
TC106-1 ISee TCK Evaluation Kits belowl 7-59
...
Cii
Q)
PC402 TC102 and TC102-1 Device socket fits TC102 and TC102-1 (See TCK102 below) I:
Q)
evaluation kits o
PAGE
PART NO. CONTENTS REMARKS
NO.
TCK102 TC 102 plus PC402 See Application section "Operating Instructions for Unear ceo Image Sensors"
TCK103 TC103 plus PC401 See Application section "Operating Instructions for Linear CCO Image Sensors"
7-59
TCK104 TC104 plus PC401 See Application section "Operating Instructions for Linear CCD Image Sensors"
TCK106-1 TC106-1 plus PC401 See Application section "Operating Instructions for Linear ceo Image Sensors"
recommended support functions for linear image sensors

SUPPLY ANALOG INPUT
PAGE
TYPE DESCRIPTION VOLTAGE, VCC VOLTAGE, ANLG IN FEATURES
NO.
MINIVI MAXI VI MINIVI MAXIVI
TL1591 Sample and hold 4.75 5.5 0.8 8andwidth 25 MHz Typ - Sample Rate 15 MHz Max 2-89
TLD369 Dual clock driver 4.75 22 - - Can switch negative voltage with respect to VDO 2-93
Caution. These devices have limited built-in gate protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MaS gates. Avoid
shorting either as or EOS to VSS during operation to prevent damage to the amplifiers.
TEXAS ~ 1-7
INSTRUMENTS
optocouplers, 6-pin plastic DIP and metal can

ISOLATION VOLTAGE (kV)
MINIMUM CTR PAGE
TYPE f - 60 Hz FEATURES
(%) NO.
PEAK RMS
3N261 1.0 - 50
3N262 1.0 - 100 1500 max) JEDEC, Metal Can 3·3
3N263 1.0 - 200 11000 max)
. 4N22t 1.0 - 25
4N23 t 1.0 - 60 JEDEC, Metal Can 3-9
G') 4N24t 1.0 - 100
CD 4N22At 1.0 - 25
..
:::l
CD
!.
4N23At
4N24At
4N25*
1.0
1.0
2.5
-
-
-
60
100
20
JEDEC, Isolated Metal Can 3·13
4N26 1.5 - 20
S"
.... JEDEC, Plastic DIP, UL File E·65085 3-19
o.
4N27 1.5 - 10
4N28 0.5 - 10
3 4N35" 3.54 2.5 100

m
r+
4N36 2.5 1.75 100 JEDEC, Plastic DIP, UL File E-65085 3-21
o·:::l 4N37
4N47§
1.5
1.0
1.05
-
100
50
4N48§ 1.0 - 100 (500 max) JEDEC, Metal Can 3-25
4N49§ 1.0 - 200 (1000 max)
MCT2 1.5 - 20
Plastic DIP, UL File E-65085 3-109
MCT2E 3.54 2.5 20
TIL102 1.0 - 25
Metal Can 3-133
TIL103 1.0 - 100
TIL111 1.5 - 13 3-137
TILl13 1.5 - 300 3-143
TILl14 2.5 - 13 3-137
TILl16 2.5 - 20 Plastic DIP, UL File E-65085 3-137
TILl17 2.5 - 50 3-137
TIll 18 1.5 - 10 3-147
TIL119A 1.5 - 300 TIL 119A has no base connection. 3-143
TIL120 1.0 - 25
Metal Can 3-151
TIL121 1.0 - 50
TIL124 5.0 - 10
High Voltage, Plastic DIP,
TIL125 5.0 - 20
UL File E-65085
3-155
TIL126 5.0 - 50
TIL127 5.0 - 300 High-Voltage Darlington, Plastic PIP
TIL 128A 5.0 - 300 UL File E-65085 3-161
TIL 128A has no base connection.
tJAN, JANTX, JANTXV levels to MIL-S-19500/486A USAF are also available.

+Available in PEP3 processing also.
§JAN, JANTX, JANTXV levels to MIL-S-19500/548 are also available.
1-8 TEXAS . "

INSTRUMENTS
POST OFFICE BOX 665303 • DALLAS. TEXAS 75265
OUiCK REFERENCE GUIDE
optocouplers. 6-pin plastic DIP and metal can (continued)

ISOLATION VOLTAGE (kVI
MINIMUM CTR PAGE
TYPE f - 60 Hz FEATURES
(%1 NO.
PEAK RMS
TIL153 10
High Voltage, Plastic DIP,
TIL154 3.54 2.5 20 3-165
UL File E-65085
TIL155 50
TIL 156 300 High-voltage, Darlington, Plastic DIP,
TIL 157A 3.54 2.5 300 UL File E-65085 3-171
TIl157 A has no base connection. c
TIL181 3.54 2.5 50 Plastic DIP, UL File E-65085 3-175 o
'';::;
TIL186-1 10 ca
TIL186-2
TIL186-3
3.54 2.5
20
50 (IF ~ 10 mAl
AC Input Darlington, Plastic DIP,
UL File E-65085
3-179 E
...
TIL 186-4 300 ....o
TIL187-1
TIL 187-2
250 .E
500 AC Input Darlington, Plastic DIP,
TIL187-3
3.54 2.5 1000 (IF ~ 2 mAl 3-185
UL File E-65085
TIL 187-4 1500
TIL188-1 250
Same as TIL 189 except TIL 190 has no base
TIL 188-2 500
TIL188-3
3.54 2.5 1000 (IF ~ 2 mAl lead connection for high-EMI environment. 3-185
UL File E-65085.
TIL188-4 1500
TIL189-1 250
TIL 189-2 500 High-Voltage, Plastic DIP,
3.54 2.5 1000 (IF ~ 2 mAl 3-191
TIL189-3 UL File E-65085
TlL189-4 1500
TIL190-1 250
Same as TIL 189 except TIL190 has no base
TIL190-2 500
3.54 2.5 1000 (IF ~ 2 mAl lead connection for high-EMI environment. 3-191
TIL190-3
UL File E-65085.
TIL190-4 1500
TIL191 20
Single Channel 4-pin DIP
TIL191A 3.54 2.5 50 (IF ~ 5 mAl 3-197
UL File 65085
TIL1918 100
TIL192 20
Dual Channel S-pin DIP
TIL 192A 3.54 2.5 50 (IF ~ 5 mA) 3-197
UL File 65085
TIL 1928 100
TIL193 20
Quad Channel 16-pin DIP
TIL 193A 3.54 2.5 50 (IF ~ 5 mAl 3-197
UL File 65085
TIL 1938 100
TIL194 20 AC Input, Single Channel
TIL 194A 3.54 2.5 50 (IF ~ 5 mA) 4-pin DIP 3-203
TIL 1948 100 UL File E-65085
TIL195 20 AC Input. Single Channel
TIL195A 3.54 2.5 50 (IF ~ 5 mA) 8-pin DIP 3-203
TIL1958 100 UL File E-650S5
TIL196 20 AC Input, Single Channel
TIL196A 3.54 2.5 50 (IF ~ 5 mAl 16-pin DIP 3-203
TIL 1968 100 UL File E-65085
TEXAS . " 1-9

INSTRUMENTS
POST OFFICE BOX 655303 • DALLAS. TeXAS 75265
OPTOELECTRONIC.S AND IMAGE SENSORS
optocouplers, a-pin plastic. DIP, high-speed (TA - 25°C unless otherwise noted)
CTR (MIN) VOL (MAX) SWITCHING TIMES (MAX)
VF (MAX) ISOLATION PAGE
TYPE Vo - 0.4 V, IF - 16 mA IF - 16 mA
IF'( 16 mA VOLTAGE (MIN) NO.
IF - 16 mA TA - O·C to 70·C tpLH OR tpHL
6N135 t 7% 0.4 V 110 = 1.1 mAl 1.7 V 1 .5 ps (RL = 4.1 kll) 3 kV de 3-33
6N136 t 19% 0.4 V 110 = 2.4 mAl 1.7 V 0.8 p.S (RL = 1.9 kll) 3 kVde 3-33
HCPL2502 15% 0.4 V 110 = 2.4 mAl 1.7 V 0.8 ps (RL = 1.9 kll) 3 kV de 3-59
HCPL2530 7% 0.4 V 110 - 2.4 mAl 1.7 V l.5 pS (RL - 4.1 kll) 3 kV de 3-67
HCPL2531 19% 0.4 V 110 - 2.4 mAl 1.7 V 0.8 pS (RL - 1.9 k!l) 3 kV de 3-67
HCPL4502 19% 0.4 V 110 = 2.4 mAl 1.7 V 0.8 pS (RL = 1.9 kll) 3 kV de 3-33
optocouplers, a-pin plastic DIP, high-speed logic gate (T A '"' 25°C unless otherwise noted)
VOL (MAX)
SWITCHING TIMES (MAX)
IF - 5 mA, VF (MAX) ISOLATION PAGE
TYPE IF = 7.5 mA, RL - 350 Il, CL - 15 pF
10L = 13 mA IF - 10 mA VOLTAGE (MIN) NO.
TA - O·C to 70·C tPLH tPHL
6N137 t 0.6 V 1.75 V 75 ns 75 ns 3 kV de 3-41
HCPL2601 0.6 V 1.75 V 75 ns 75 ns 3 kV de 3-75
HCPL2630* 0.6 V 1.75 V 75 ns 75 ns 3 kV de 3-83
HCPL2631 * 0.6 V 1.75 V 75 ns 75 ns 3 kV de 3-91
optocouplers, a-pin plastic DIP, high-speed, high-gain 25°C unless otherwise noted)
CTR (MIN)
VOL (MAX) SWITCHING TIMES (MAX)
Vo - 0.4 V VF (MAX) ISOLATION PAGE
TYPE IF - 1.6 mA IF - 1.6 mA
IF - 1.6 mA, IF = 1.6 mA VOLTAGE (MIN) NO.
TA - O·C to 70·C
TA - O·C to 70·C tpLH tpHL
35 ps, 10 ps,
6N138 t 300% 0.4 V 110 = 4.8 mAl 1.7 V 3 kV de 3-49
RL = 2.2 kll RL = 2.2 kll
60 P.s, 25 p.s,
6N139 t 500% 0.4 V 110 = 6.4 mAl 1.7 V 3 kV de 3-49
35 p'S, 20 ps,
HCPL2730 300% 0.4 V (10 = 4.8 mAl 1.7 V 3 kV de 3-99
35 p'S, 20 p.s,
HCPL2731 500% 0.4 V 110 = 6.4 mAl 1.7 V 3 kV de 3-99
optocouplers, 6-pin plastic DIP TRIAC driver 25°C unless otherwise noted)
1FT (MAXI VF (MAXI VTM (MAXI IORM (MAXI dv/dt ISOLATION PAGE
TYPE
VTM - 3V IF - 10 mA ITM = 100 mA RATEO VORM (TYP) VOLTAGE (MINI NO.
MOC3009 30 mA 1.5 V 3V 100 nA 12 Vips 7.5 kV de
3-113
MOC3011 10 mA 1.5 V 3V 100 nA 12 V/p.s 7.5 kV de
3-119
t JEOEC registered
*Oual channel
1-10 TEXAS •
INSTRUMENTS
optocouplers, 6-pin plastic DIP TRIAC driver 25 DC unless otherwise noted)

1FT (MAXI VF (MAX) VTM (MAX) IDRM (MAX) dv/dt ISOLATION PAGE
TYPE
VTM = 3 V IF = 10 rnA ITM = 100 rnA RATED VDRM (TYP) VOLTAGE (MINI NO.
TIL3009 30 rnA 1.5 V 3V 100 nA 12 V/~s 3.5 kV de
TIL3010 15 mA 1.5 V 3V 100 nA 12 V/~s 3.5 kV de
3·207
TIL3012 5 mA 1.5 V 3 V 100 nA 12 V/~s 3.5 kV de
3·213
TIL3022 10 mA 1.5 V 3V 100 nA 100 V/~s 3.5 kV de s::::
TIL3023 5 mA 1.5 V 3V 100 nA 100 V/~s 3.5 kV de o
'';:;
optocouplers, 6-pin plastic DIP, Schmitt trigger
TYPE
LOGIC OUTPUT
IFT+ (MAX)
HYSTERESIS
25 DC unless otherwise noted)
SWITCHING TIMES (MAX) ISOLATION PAGE
.
E
CO
....o
OPI8012
OPI8013
FUNCTION
8uffer
Buffer
CONFIGURATION
Totem pole
Open collector
10 mA
10 mA
RATIO (TYPI
1.4
1.4
t,ORtf
70 ns
70 ns
tpLH OR tpHL
5 ~s
5 ~s
VOLTAGE (MIN)
3.54 kV de
3.54 kV de
NO.
3·125
-s::::
OPI8014 Inverter Totem pole 10 mA 1.4 70 ns 5 ~s 3.54 kV de

OPI8015 Inverter Open collector 10 rnA 1.4 70 ns 5 ~s 3.54 kV de
hybrid displays
CHARACTER COLOR
TYPE OF PAGE
TYPE HEIGHT OF PACKAGE REMARKS
CHARACTER IS) NO.
mm (inches) DISPLAY
TIL302 Left decimal
TIL302A 14·lead dual· Left decimal
7-segment 6,9 (0.2701 Red 4·3
TIL303 in-line plastic Right decimal
TIL303A Right decimal
TIL304 Polarity and 14·lead dual· Right decimal
6,9 10.2701 Red 4·3
TIL304A overflow unit in-line plastic Right decimal
5 x 7 14·lead dual·
TIL305 7,610.3001 Red Left decimal 4·9
alphanumeric in-line plastic
TIL306 left decimal
TIL306A Left decimal
4·11
TIL307 Right decimal
TIL307A 16·lead dual· Right decimal
7-segment 6,910.2701 Red
TIL308 in-line plastic Left decimal
TIL308A Left decimal
4·17
TlL309 Right decimal
TIL309A Right decimal
TIL311 14-lead dual- Logic includes latch, decoder, and driver.
Hexadecimal 7,6 10.3001 Red 4·23
TIL311A in-line pl,astic TL311 and TL311 A - left and right decimals
TEXAS ~ 1-11
INSTRUMENTS
infrared-emitting diodes
POWER OUTPUT
VF (MAX) 'P (TYP) PAGE
TYPE Po (MINI IF "'HI FEATURES
)F - 50 rnA (rim) NO.
(mW) (rnA)
TIL23 0.4 50 35° 1.5 V 940
Pill package for mounting on double-sided
TIL24 1.0 50 35° 1.5 V 940 5·7
printed circuit boards. Compatible with
TIL25 0.75 50 35° 1.5 V 940
TIL601 Series.
TIL24HR2 1.0 50 35° 1.5 V 940 5-11
G) phototransistors
CI)
LIGHT CURRENT DARK CURRENT
:::J POWER PAGE
...
CI) TYPE VCE = 5 V (MAX)
DISSIPATION
FEATURES
NO .
e. IN5722
MIN
0.5 rnA
MAX
3 rnA
VCE = 30 V
25 nA 50 rnW
....
:::J
o
IN5723
IN5724
2 rnA
4 rnA
5 rnA
8 rnA
25 nA
25 nA
50rnW
50rnW
EIA~registered versions
of TIL601 thru TIL604
5-3
... IN5725 7 rnA 25 nA 50 rnW

3 LS600 0.8 rnA ~
25 nA 50rnW
m
r+ LS602 0.5 rnA ~
25 nA 50rnW
o·
:::J
LS611
LS612
0.5 rnA
1 rnA
2 rnA
3 rnA
25 nA
25 nA
50rnW
50rnW
LS613 2 rnA 4 rnA 25 nA 50 rnW
LS614 3 rnA 5 rnA 25 nA 50rnW Pill package designed for 5-25
LS615 4 rnA 6 rnA 25 nA 50rnW mounting on double-sided
LS616 5 rnA 7 rnA 25 nA 50rnW printed board. Compatible
LS617 6 rnA 8 rnA 25 nA 50rnW with TIL23 series.
LS618 7 rnA 9 rnA 25 nA 50rnW
LS619 8 rnA ~
25 nA 50rnW
TIL601 0.5 rnA 3 rnA 25 nA 50rnW
TIL602 2 rnA 5 rnA 25 nA 50rnW
5-25
TIL603 4 rnA 8 rnA 25 nA 50 rnW
TIL604 7 rnA 25 nA 50 rnW
TIL604HR2 7 rnA 25 nA 50rnW 5·33
1-12 TEXAS •
INSTRUMENTS
POST OFFICE BOX 655303 • DALLAS, TeXAS 75265
OUiCK REFERENCE GUIDE
sensor-emitter arrays
POWER VCE(sa!)
IC
OUTPUT VF MAX IL MIN TVP PAGE
TYPE FUNCTION IF = 50 rnA FEATURES
MIN IF - 50 rnA VCE - 5 V Ic - 2 rnA NO.
VCE = 5 V
IF-50mA IF - 50 rnA
Nine-element Nine TIL23s mounted
TIL131 gallium arsenide 0.4 rnW 1.5 V on pc board for paper 5-13
IRED array tape readers
Nine-element Nine LS600s mounted
TIL132 phototransistor 2 rnA on pc board for paper 5-13 c::::
array tape readers o
Consists of a TIL131
'';::;
Nine-channel 2.5 rnA
and TIL 132 with
as
TIL133 IRED-photo- to 0.4 V
specified channel
5-13 E
...
transistor pair 10 rnA
performance
Twelve TIL23s mounted
....oc::::
Twelve-element
on 6,4-mm (0.250-inl
TIL134 gallium arsenide 0.4 rnW 1.5 V 519
centers. For reading
IRED array
punched cards
Twelve L600s mounted
Twelve-element
on 6,4-mm 10.250-inl
TIL135 phototransistor 2 rnA 5-19
centers in double-sided
array
pc board
Consists of a TIL 134
Twelve-channel 2.5 rnA
and TIL135 with
TIL136 IRED-photo- to 0.4 V 5-19
specified channel
transistor pair 10 rnA
performance
TEXAS ~ 1-13
INSTRUMENTS
G)
CD
CD
.
:::l
ea.
-3..
:::l
o
Q)
r+
o·
:::l
1-14
OPTOELECTRONICS
CROSS·REFERENCE GUIDE
Replacements are based on similarity of electrical and mechanical characteristics as shown in currently published
data. Interchangeability in particular applications is not guaranteed. Before using a device as a substitute. the
user should compare the specifications of the substitute device with the specifications of the original.
Texas Instruments makes no warranty as to the information furnished and buyer assumes all risk in the use
thereof. No liability is assumed for damages from the use of the information contained herein.
TI
DEVICE MANUFACTURER/SOURCE DEVICE CODE
3N243 JEDEC Registered (Industry common) T)L120 B
3N244 JEDEC Registered (Industry common) T)L120 B s::
0
3N245 JEDEC Registered (Industry common) T)L120 B '';:;
4N22 JEDEC Registered (Industry common) 4N22 A CO
-...E
4N22A JEDEC Registered (Industry common) 4N22 A
4N23 JEDEC Registered (Industry common) 4N23 A
0
4N24 JEDEC Registered (Industry common) 4N24 A ..5
4N25 JEDEC Registered (Industry common) 4N25 A ...
(ij
Q)
4N25A
4N26
JEDEC Registered (Industry common)
JEDEC Registered (Industry common)
TIL154
4N26
A
A
s::
Q)
4N27 JEDEC Registered (Industry common) 4N27 A C!)
4N29A JEDEC Registered (Industry common) TIL 156 A
4N30 JEDEC Registered (Industry common) TIL113 A
6N135 Hewlett Packard 6N135 A
6N140A Hewlett Packard 6N140A A
5082-7100 Hewlett Packard TIL305 B
5082-7300 Hewlett Packard TlL309 B
5082·7302 Hewlett Packard TIL308 B
BPX621 Siemens TlL602 B
BPX6211 Siemens TIL602 B
BPX62111 Siemens TlL603 B
CL12 Clairex TIL118 B
A = TI Direct Replacement
B = Nearest Replacement
TEXAS. 1-15
INSTRUMENTS
OPTOELECTRONICS
TI
Cl13 Clairex 4N37 B
Cl15 Clairex TIl116 B
CL16 Clairex TlL117 B
Cl17 Clairex TIl118 8
CL19 Clairex TIl116 8
G') CL1510 Clairex 4N37 B
C1)
Cl1511 Clairex 4N37 B
::s
...
C1) CL10506A
CLT3160
Clairex
Clairex
TIl116
TIL602
B
B
~
-..
CLT3170 Clairex TIl604 8
::s CNX35 Quality Technologies Corp. TIl126

4N35
A
A
CNX36 Quality Technologies Corp.
...0 CNYI7-1 General Electric TIl126 8
3
Q)
CNY17-2 General Electric TIL126 B
CNYI7-3 General Electric TIl127 B
O· CNYI7-4 General Electric TIl128 B
::s CNYI8-2 Siemens TIL120 B

CNYI8-3 Siemens TIl121 B
CNY35 General Electric Tll186-1 A
CNY47 General Electric TIl116 A
CNY47A General Electric TIL117 A
CQY80 General Electric 4N35 A
DllA Siemens TIl302 B
DL10 Siemens TIL302 B
DL10A Siemens TIL302 B
Dl57 Siemens TIl305 B
Dll01 Siemens TIL304 8
DL101A Siemens TIl304 B
GE3009 General Electric TIl3009 A
GE3011 General Electric TIL3011 A
GEPS2001 General Electric TIl117 A
HllAl General Electric TIl117 A
H11Al Motorola TIl117 A
HllA2 General Electric TIL112 A
HllA2 Motorola 4N26 A
HllA3 General Electric Tll114 8
HllA3 General Electric TIl114 A
HllA3 General Electric TlL115 B
1-16 TEXAS •
INSTRUMENTS
OPTOELECTRONICS
TI
HllA4 General Electric TILlll A
HllA5 General Electric TILl18 B
HllA5 General Electric TILl16 A
HllA5 Motorola TILl17 A
HllAl0 General Electric 4N27 A
HllA520 General Electric TIL 124/TIL 154 B C
HllA550 General Electric TIll 26 A 0
HllA590 General Electric TIL126 A "+::
CO
HllA590 TIL 126/TIL 155
...0E
General Electric B
HllA5100 General Electric 4N35 A
HllAAl
HllAAl
General Electric
Motorola
TIL 186-2
TlL186-1
A
A
....C
HllAA2 General Electric TIL186-1 A
HllAA2
HllAA3
Motorola
General Electric
TIL186-2
TIL 186-3
A
A
...
CO
Q)
HllAA3 Motorola Till 86-3 A C
Q)
Hl1AA4 General Electric TIL186-4 A
~
HllAA4 Motorola TIL 186-4 A
Hl1Bl General Electric TIL189-2 A
HllBl General Electric TILl13 B
HllBl General Electric TIL 187 B
HllBl General Electric TIL188 B
Hl182 General Electric TILl19 B
HllB2 General Electric TILl13 A
HllB3 General Electric TILl19 A
HllB255 General Electric TIL189-1 A
HllBX522 General Electric TIL 189-3 A
Hl1G2 General Electric TIL156 B
HllJl General Electric TIL3011 A
HllJ2 General Electric TIL3010 A
HllJ3 General Electric TlL3011 A
Hl1J4 General Electric TIL3010 A
HllJ5 General Electric TIL3010 A
Hl1Ll General Electric OPI8015 A
Hl1L2 General Electric OPI8015 A
HCPL2502 Hewlett Packard HCPL2502 A
HCPL2801 Hewlett Peckard HCPL2601 A
IL-l Siemens Till 25 A
IL-5 Siemens Till 17 A
TEXAS • 1-17
INSTRUMENTS
OPTOELECTRONICS
TI
IL-12 Siemens TILl11 B
IL-15 Siemens TIL112 A
IL-16 Siemens TIL118 B
IL-74 Siemens TIL 111 A
IL-101 Siemens HCPL2601 A
C) IL-250 Siemens TIL186-3 A
CD IL-251 Siemens TIL 186-2 A
:3 IL-252 Siemens TIL 186-4 A
CD
~ IL-501 Siemens TIL126 A
e!.
-
IL-505 Siemens 4N35 A
IL-512 Siemens TIL125 A
:3
ILA-30 Siemens TIL 113 A
0 ILA-55 Siemens TIL189-1 A
~
3
II)
ILCA2-30
ILCA2-55
Siemens
Siemens
TIL113
TIL189-1
A
A
r+
O· JAN4N22
JAN4N22A
Micropac
Micropac
JAN4N22
JAN4N22A
A
A
:3
JAN4N22A Optek/Optron JAN4N22A A
JAN4N23 Micropac JAN4N23 A
JAN4N23A Micropac JAN4N23A A
JAN4N24A Micropac JAN4N24A A
JANTX4N22 Micropac JANTX4N22 A
JANTX4N22A Micropac JANTX4N22A A
JANTX4N22A Optek/Optron JANTX4N22A A
JANTX4N23 M!cropac JANTX4N23 A
JANTX4N23A OptekiOptron JANTX4N23A A
JANTX4N24A Optek/Optron JANTX4N24A A
JANTXV4N22 Micropac JANTXV4N22 A
JANTXV4N22A Micropac JANTXV4N22A A
JANTXV4N22A Optek/Optron JANTXV4N22A A
1-18 TEXAS ~
INSTRUMENTS
OPTOELECTRONICS
CROSS-REFERENCE GUIDE
TI
L 15AX601 General Electric TIL601 A
L 15AX604 General Electric TIL604 A
MANIA Quality Technologies Corp. TIL302 A
MAN2A Quality Technologies Corp. TIL305 A I:
0
MAN10A Quality Technologies Corp. TIL302 A '.;::0
MAN101A Quality Technologies Corp. TIL304 A C'C
MAN1001A Quality Technologies Corp. TIL304 A E
...
MCA230
MCA231
Quality Technologies Corp.
Quality Technologies Corp.
TIL156
TIL 156
A
A ....I:0
MCA255 Quality Technologies Corp. TIL 189-1 A
MCA2230 Quality Technologies Corp. TIL 127 A
MCA2231 Quality Technologies Corp. TIL189-2 A
Cii
...
CI)
MCA2255 Quality Technologies Corp. TIL 189-2 A
I:
MCC670 Quality Technologies Corp. 6NI38 A CI)
MCC671 Quality Technologies Corp. 6NI39 A C!)
MCL2502 Quality Technologies Corp. HCPL2502 A
MCP3009 Quality Technologies Corp. MOC3009 A
MCT2 Quality Technologies Corp. MCT2 A
MCT2E Quality Technologies Corp. MCT2E A
MCT4 Quality Technologies Corp. TIL 120 A
MCT26 Quality Technologies Corp. TIL III A
MCT272 Quality Technologies Corp. 4N36 A
MCT273 Quality Technologies Corp. TIL 127 B
MCT276 Quality Technologies Corp. TIL116 A
A ~
TI Direct Replacement
TEXAS "'I} 1-19

INSTRUMENTS
OPTOELECTRONICS
TI
MCT2202 Quality Technologies Corp. TlL126 A
MCT52ll Ouality Technologies Corp. 4N35 A
MLED9l0 Motorola TIL23 A
MOCl19 Motorola TIL128A A
C) MOC1000 Motorola TILl16 A
CD MOC 1000 Motorola 4N26 B
:::l
...
CD MOC100l
MOC100l
Motorola
Motorola
4N25
TILl16
B
A
e!. MOC1002 Motorola 4N27 B
....
:::l MOC1002
MOC1003
Motorola
Motorola
TIL1l6
4N28
A
B
...
0 MOC1005 Motorola TIL125 A
3 MOC1006 Motorola TIL124 A
I» MOCll00 Motorola TILl13 A
"'
O· MOC1200 Motorola TIL1l3 A
:::l MOC3009 Motorola MOC3009 A
MOC3010 Motorola MOC3010 A
MOC30ll Motorola MOC30ll A
MOC5007 Motorola OPI8015 A
MOC5008 Motorola OPI8015 A
MOC5009 Motorola OPIB015 A
MOC8020 Motorola TIL190-2 A
MOC8030 Motorola TIL190-l A
MOC8l00 Motorola TIL126 A
MRD601 Motorola TIL601 A
MRD603 Motorola TIL604 B
OP123 Optek/Optron TIL23 A
OP600 Optek/Optron LS600 A
OP640 Optek/Optron LS600 A
1-20 TEXAS " ,

INSTRUMENTS
OPTOELECTRONICS
TI
DEVICE MANUFACTURERfSOURCE DEVICE CODE
OP641 OptekfOptron TIL601 A
OPll02 OptekfOptron TIL1 02f4N22 A
OPll03 OptekfOptron TIL 103f4N24 A
OPI130 Optek/Optron 4N48 A
OPI140 Optek/Optron TIL120 8
OPI2100 OptekfOptron 4N35 A
OPI2150 OptekfOptron TlL112 A
C
0
OPI2151 OptekfOptron 4N27 A -..::;
OPI2152 Optek/Optron 4N26 A ca
-E
...
OPI2153 Optek/Optron TILI17 A
OPI2154 Optek/Optron 4N37 A 0
C
OPI2250 OptekfOptron TIL115 A
OPI2251
OPI2252
Optek/Optron
Optek/Optron
TIL153
TILl16
A
A ...
Cii
Q)
OPI2253 OptekfOptron TILl17 A
C
OPI2254 Optek/Optron 4N36 A Q)
OPI2255 Optek/Optron 4N36 A ~
OPI2500 OptekfOptron TIL186-1 A
OPI2501 Optek/Optron TIL 186-2 A
OPI2502 Optek/Optron HCPL2502 A
OPI2630 Optek/Optron HCPL2630 A
OPI3009 Optek/Optron TlL3009 A
OP13022 OptekfOptron TlL3022 A
OPI3150 Optek/Optron TIL119A A
OPI3151 Optek/Optron TlL119A A
OPI3152 OptekfOptron TIL189-1 A
OPI3252 Optek/Optron TIL189-1 A
OPI8012 Optek/Optron OPI8012 A
OPISOl3 Optek/Optron OPI8013 A
OPIB014 Optek/Optron OPI8014 A
OPI8015 Optekl0ptron OPI8015 A
PCll0 Sharp TIL126 A
PC4N25 Sharp 4N25 A
PC4N26 Sharp 4N26 A
PC4N27 Sharp 4N27 A
PC4N28 Sharp 4N28 A
PC4N35 Sharp 4N35 A
TEXAS ~ 1-21
INSTRUMENTS
OPTOELECTRONICS
TI
PC4N36 Sharp 4N36 A
PC4N37 Sharp 4N37 A
PC613 Sharp TIL 117 A
PC618 Sharp 6N136 A
PC713 Sharp TlL126 A
PC733 Sharp TIL 186-2 A
PC733H Sharp TIL 186-2 A
PC810 Sharp TIL191A A
Q PCB10A Sharp TIL191A A
(1)
..
PCB10B Sharp TIL191B A
:::::I
(1) PCB12 Sharp TlL191 B A
PC812A Sharp TIL191B A
e!.
-
PCB13 Sharp TIL194 A
PC813A Sharp TIL 194A A
..3
:::::I
0 PCB14A Sharp TIL194A A
g) PCB16 Sharp TIL191A A
r+
O· PCB16A
PCB16AB
Sharp
Sharp
TIL191B
TIL191B
A
A
:::::I
PCB16AC Sharp TIL191B A
PCB16AD Sharp TIL191B A
PCB17 Sharp TIL191A A
PCB17Tl Sharp TIL191B A
PCB1B Sharp TIL191 A
PC823A Sharp TIL 195A A
PCB25 Sharp TIL19B A
PCB26A Sharp TIL 192B A
PCB26AB Sharp TIL 192B A
PCB26AC Sharp TIL 192B A
PCB26AD Sharp TIL 192B A
PC827T1 Sharp TIL 192B A
PC843A Sharp TIL196A A
PCB46A Sharp TIL 193B A
PCB46AB Sharp TIL193B A
PCB46AC Sharp TIL 193B A
PCB46AD Sharp TIL193B A
PCB47Tl Sharp TIL 193B A
PC900 Sharp OPIB015 A
PC901 Sharp OPIB015 A
1-22 TEXAS ~
INSTRUMENTS
OPTOELECTRONICS
CROSS-REFERENCE GUIDE
TI
PS20018 NEG TILl17 A
PS20028 NEG TIL157A A
PS20038 NEG TILl17 A
PS20048 NEG TIL189-4 A
PS20068 NEG 6N136 A
PS20068111 NEG 6N135 A
PS20078 NEG 6N137 A
PS2010-K NEG 4N36 A
PS2010-L NEG TIL 117 A I:
PS2010-M NEG TILl16 A
0
'';::;
PS2011-L NEG 4N35 A aJ
PS2011-M NEG TIL126 A E
~
PS2012111-M NEG TIL128 A
PS2012-M
PS2015-N
NEG
NEG
TIL128A
TIL125
A
A
....I:0
PS20168 NEG 6N136 A
PS2018-L NEG 4N35 A aJ
~
PS2018-M NEG TIL126 A Q)

PS2021-L NEG 4N35 A
I:
Q)
PS2021-M NEG TIL 126 A (!)
PS2031-L NEG 4N35 A
PS2031-M NEG TIL126 A
PS2044 NEG 6N136 A
PS2401A-1R NEG TIL1918 A
PS2401A-2R NEG TIL 1928 A
PS2401A-4R NEG TIL 1938 A
PS2403-1M NEG TIL1918 A
PS2403-2M NEG TIL1928 A
PS2403-4M NEG TIL 1938 A
PS2501-1D NEG TIL1918 A
PS2501-2D NEG TIL 1928 A
PS2501-4D NEG TIL 1938 A
PS2505-1 NEG TIL 1948 A
PS2505-2 NEG TIL 1958 A
PS2505-4 NEG TIL 1968 A
SllM05V Sharp MOG3022 A
SGOl182 Honeywell TILl27 8
SG01182 Honeywell TILl13 B
SGOl182 Honeywell TIL157 B
SGOl182 Honeywell TILl19 B
SD2440-1 Honeywell TIL601 A
S02440-2 Honeywell TIL602 A
SE2450-1 Honeywell TIL23 A
A == TI Direct Replacement
B == Nearest Replacement
TEXAS ~ 1-23
INSTRUMENTS
OPTOELECTRONICS
TI
SE2460-1 Honeywell TIL23 6
SE2460-2 Honeywell TIL23 6
SFH600 Honeywell TILl17 6
SFH600-0 Honeywell TILl17 6
SFH601-1 Honeywell TIL 155 6
SPX2E Honeywell TIL125 6
SPX2E Honeywell TIL124 6
C) SPX6 Honeywell TIL 126 A
CD SPX26 Honeywell TIL153 A
:::I SPX26 Honeywell TILl18 6
CD
"'"
!!!..
SPX26
SPX33
Honeywell
Honeywell
TIL 115
TIL154
6
6
SPX33 TIL153
....
:::I
0
SPX3362
Honeywell
Honeywell TILl16
6
6
SPX3362 Honeywell TILl14 6
3"'" SPX53 Honeywell TILl17 6
I» SPX53 Honeywell TIL155 A
P+
TLP2530 HCPL2530
C)" TLP2531
Toshiba
Toshiba HCPL2531
A
A
:::I
TLP2601 Toshiba HCPL2601 A
TLP3009 Toshiba MOC3009 A
TLP504A Toshiba TIL 192A A
TLP504A-2 Toshiba TIL 193A A
TLP504A-2G6 Toshiba TIL 1936 A
TLP504AG6 Toshiba TIL 1926 A
TLP521-1A Toshiba TIL191A A
TLP521-1G6 Toshiba TIL1916 A
TLP575 Toshiba TIL157A A
TLP620 Toshiba TlL194A A
TLP620-2 Toshiba TIL 195A A
TLP620-2G6 Toshiba TIL195B A
TLP620-4 Toshiba TIL 196A A
TLP620-4G6 Toshiba TIL 1966 A
TLP620G6 Toshiba TIL1946 A
TLP621 Toshiba TIL191A A
1-24 TEXAS ~
INSTRUMENTS
OPTOELECTRONICS
TI
TLP621-2 Toshiba TlL192A A
TLP621-2GB Toshiba TIL192B A
TLP621-4 Toshiba TIL193A A
TLP621-4GB Toshiba TIL 193B A
TLP621GB Toshiba TlL191 B A
TLP624 Toshiba TIL191B A
TLP624-2 Toshiba TIL192B A
TLP624-4 Toshiba TIL193B A
TLP626 Toshiba TIL194B A c:
TLP626-2 Toshiba TIL 195B A
0
',j:
TLP626-4 Toshiba TIL 196B A
.
CO
-
TLP630 Toshiba TIL186-3 A E
TLP630GB Toshiba TIL186-4 A
0
TLP651 Toshiba 6N136 A
c:
..
(ij
~
II)
(!J
TEXAS ~ 1-25
INSTRUMENTS
ceo IMAGE SENSORS
TI
RL 128G EG&G Reticon TC102 B
RL2048 EG&G Reticon TC103 B
CCD111 Fairchild TC102 B
G')
CD
..=
CD
!!.
5'
o..
~
3
C»
r+
o·
=
1-26 . TEXAS'"
INSTRUMENTS
GLOSSARY
OPTOELECTRONIC AND IMAGE·SENSING TERMS AND DEFINITIONS
Introduction
This glossary contains letter symbols, abbreviations, terms, and definitions commonly used with
optoelectronic devices. Most of the information, excluding the image-sensing concepts, was obtained from
JEOEC Standard No. 77.
Index to Glossary by Symbols and Abbreviations

B Demodulation bandwidth
CCO Charge-coupled device
CTD Charge-transfer device
CRT Cathode-ray tube s::::
CTR Current transfer ratio o
"';::;
Ee Irradiance ctI
Ev Illuminance
Modulation frequency ...o
E
fmod
H Irradiance
Current transfer ratio
....s::::
hF
IC(off) Off-state collector current
IC(on)
10
On-state collector current
Dark current
...
CU
CI)
Radiant intensity
s::::
Ie CI)
IF Forward current CJ
IL Light current
IR Reverse current
IREO Infrared-emitting diode
Iv Luminous intensity
Le Radiance
Lv Luminance
LED Light-emitting diode
NEP Noise equivalent power (spectral density)
NTSC National Television System Committee
Pn Noise equivalent power (spectral density)
Po Radiant flux or power output
Qe Radiant energy
Qv Luminous energy
Re Radiant responsivity
RGB Red-green-blue (monitor)
Rv Luminous responsivity
sr Steradian
td Delay time
tf Fall time
tf Radiant pulse fall time
tr Radiant pulse rise time
tr Rise time
ts Storage time
VF Forward voltage
M Noise equivalent bandwidth
,!1}. Spectral bandwidth
8HI Half-intensity beam angle
J.p Wavelength at peak emission
<l>e Radiant flux
<l>v Luminous flux
TEXAS ~ 1-27
INSTRUMENTS
GLOSSARY
OPTOELECTRONIC AND IMAGE·SENSING TERMS AND DEFINITIONS
Units of Measurement
Unit Symbol Note

ampere t A
angstrom A 1 A ~ 10- 10 m ~ 10-4 11m ~ 0.1 nm
candela t cd 1 cd ~ 1 Im/sr
candela/foot 2 cd/ft2 1 cd/ft2 ~ 10.76391 cd/m2
candela/meter 2t cd/m 2
degree Celsius t °c
oK See K
C) farad t F
~ foot ft 1 ft ~ 0.3048 m (exactly)
:;j
footcandle fc 1 fc ~ 1 Im/ft2 ~ 10.76391 Ix
...
~
footlambert fL 1 fL ~ (1 /1r) cd/ft 2 ~ 3.426259 cd/m 2
!!.
-....
: ;j
hertz t
inch
kelvin t
Hz
in
K
1 in ~ 2.54 cm (exactly)
Formerly oK, degree Kelvin
...
0 lambert L 1 L ~ 3183.099 cd/m 2
3
Q)
lumen t
lux t
1m
Ix 1 Ix ~ 1 Im/m 2
!:t. meter t m
0 mho mho 1 mho ~ 1S
:;j
micron 11 The equivalent unit 11m is preferred
mil mil 1 mil ~ 10- 3 in ~ 0.0254 mm (exactly)
nit nt 1 nt ~ 1 cd/m2
ohmt rl
phot ph 1 ph ~ 1 Im/cm 2
second t
siemens t S
steradian t sr
stilb sb 1 sb ~ 1 cd/cm 2
volt t V
watt t W
t International System (SI) units.
Metric Multipliers
Most of the preceding 51 unit symbols can be combined with the metric multipliers that follow.
Symbol Prefix Multiple

G giga 109
M mega 106
k kilo 103
h hecto 102
da deka 10
d deci 10- 1
centi 10- 2
m milli 10- 3
11 micro 10- 6
n nanD 10- 9
p pica 10- 12
f femto 10- 15
'-28 TEXAS ~
INSTRUMENTS
GLOSSARY
OPTOELECTRONICS AND IMAGE-SENSING TERMS AND DEFINITIONS
Analog Output
An output whose amplitude is continuously proportionate to the input.
Axis of Measurement
The direction from the source of radiant energy, relative to the mechanical axis, in which the measurement
II
of radiometric and/or spectroradiometric characteristics is performed.
Black Level
The display signal level corresponding to the maximum limit for black peaks. I:
o
-.;::;
Brightness
See Luminance.
Charge-Coupled Device (CCDI

.
CU
E
....o
A charge-transfer device that stores charge in potential wells and transfers this charge almost completely
.E
as a packet by translating the position of the potential wells.
Charge-Coupled Image Sensor

A charge-coupled device in which an optical image is converted into packets of charge that can be transferred
as the electrical analog of the image.
Charge-Transfer Device (CTDI

A device in which the operation depends on the movement of discrete packets of charge along or beneath
the semiconductor surface, or through the interconnections on the semiconductor surface.
Color Contrast
The ratio of the luminance values of two colors.
Color Encoder
A device that produces an encoded color signal from separate red, green, and blue color inputs.
Color Edging
Undesired colors appearing at the edges of colored images.
Color Temperature (of a light sourcel

The absolute temperature of a blackbody radiator having a chromaticity equal to that of the light source.
TYPICAL UNIT: K (formerly °KI.
Coordinates
A method of locating a pixel in space, typically using an x, y, and z axis. (Cartesian Coordinates Systeml.
Current Transfer Ratio, DC (of an Optocouplerl (hF or CRTI

The ratio of the dc output current to the dc input current.
TEXAS • 1-29
INSTRUMENTS
GLOSSARY
Dark Current (10)

The current that flows through a photosensitive device in the dark condition.
NOTE: The dark condition is attained when the electrical parameter under consideration approaches a value
that cannot be altered by further irradiation shielding.
Darlington Phototransistor
A phototransistor whose collector and emitter are connected to the collector and base, respectively, of
a se"cond transistor. The emitter current of the input transistor is amplified by the second transistor and
C) the device has very high sensitivity to illumination or irradiation.
CD GRAPHIC SYMBOL:
:s
...
CD
e?.
....5'
...
o
3
o·...
I» NOTE: The base region(s) mayor may not be brought out as (an) electrical terminai(s) .
:s Delay Time ltd)

The time interval from the point at which the leading edge of the input pulse has reached 10% of its
maximum amplitude to point at which the leading edge of the output pulse has reached 10% of its maximum
amplitude.
Demodulation Bandwidth (B)

The frequency interval in which the demodulated output of a photodetector, or a system including a
photodetector, is not more than 3 dB below the midband output. Midband output is the output in the region
of flat response or the average output over a specific frequency range.
Fall Time (tf)

The time duration during which the trailing edge of a pulse is decreasing from 90% to 10% of its maximum
amplitude.
Forward Current (IF)

The current through a semiconductor diode when the p-region (anode) is a positive potential with respect
to the n-region (cathode).
Forward Voltage (VF)

The voltage across a semiconductor diode associated with the flow of forward current. The p-region is
a positive potential width respect to the n-region.
Gray Scale
An optical pattern in discrete steps between light and dark.
Note: A gray scale with ten steps that differ by the square root of two is usually in resolution test charts.
Half-Intensity Beam Angle (OHI)

The angle within which the radiant intensity is not less than half of the maximum intensity.
1-30 TEXAS " ,

INSTRUMENTS
GLOSSARY
Hexadecimal Display
A solid-state display capable of exhibiting numbers 0 through 9 and alpha characters A through F.
NOTE: The TIL311 is a hexadecimal display with an integral TTL circuit that will accept, store, and display
4-bit binary data.
Illuminance (Illumination) (E v )
The luminous flux density incident on a surface; the quotient of the flux divided by the area of illuminated
surface.
c:
TYPICAL UNITS: Im/ft2, Ix = Im/m2; 1 Im/ft2 = 10.76391 Ix. o
-,;;
Image CO
A displayed view of one or more objects or parts of objects.
Infrared Emission
Radiant energy that is characterized by wavelengths longer than visible red, i.e., about 0.78 I'm to 100 I'm.
-...E
o
c:
n;
...
CI)
Infrared-Emitting Diode (IRED) c:
CI)
A diode capable of emitting radiant energy in the infrared region of the spectrum resulting from the (!)
recombination of electrons and holes.
NOTE: TI manufactures GaAs and GaAIAs radiant-energy sources that emit in the 0.82-um to 0.94-um
portion of the near-infrared region. These emitters are spectrally matched with TI silicon photodetectors.
GRAPHIC SYM80L:
Irradiance (E e , formerly H)
The radiant flux density incident on a surface; the quotient of the flux divided by the area of irradiated
surface.
TYPICAL UNITS: W/ft 2 , W/m2; 1 W/ft 2 = 10.76391 W/m2.
Light Current (lL)

The current that flows through a photosensitive device, such as a phototransistor or a photodiode, when
it is exposed to radiant energy.
Light-Emitting Diode (LED)

A diode capable of emitting luminous energy resulting from the recombination of electrons and holes.
GRAPHIC SYMBOL:
TEXAS ~ 1-31
INSTRUMENTS
GLOSSARY
OPTOELECTRONICS AND IMAGE·SENSING TERMS AND DEFINITIONS
Linearity
The property of being linear. A linear relationship exists between two quantities when a change in a second
quantity is directly proportional to change in the first quantity.
Luminance (Lv) (Photometric Brightness)

The luminous intensity of a surface in a given direction per unit of projected area of the surface as viewed
from that direction.
TYPICAL UNITS: fL, cd/ft 2 , cd/m 2 ; 1 fL = (1 h) cd/ft 2 = 3.426259 cd/m 2 .
Q
CD Luminous Energy (Ov)
:::s
...
CD
ea.
The time rate of flow of luminous energy .
-3. TYPICAL UNITS: Im*s.
Luminous Flux (cJ>v)

...
o Energy traveling in the form of visible radiation .
3 TYPICAL UNIT: 1m
I»
r+
o·:::s NOTE: Luminous flux is related to radiant flux by the eye-response curve of the International Commission
of Illumination (CIE). At the peak response (A = 555 nml. 1 W = 680 1m.
Luminous Intensity (Iv)

Luminous flux per unit solid angle in a given direction.
TYPICAL UNIT: cd. 1 cd = 1 Im/sr.
Luminous Responsivity (R v )
The quotient of the rms value of the fundamental component of the electrical output divided by the rms
value of the fundamental component of the luminous flux of a specified distribution.
TYPICAL UNITS: Vllm, Allm.
Modulation Frequency (fmod)

The frequency of modulation of the luminous or radiant flux.
Monochrome
Any combination of colors of the same hue, but of different saturations and luminances.
Noise Equivalent Bandwidth (.1.1)

The equivalent bandwith of a flat (or white) sharp-cutoff noise spectrum, having the same maximum value
and containing the same noise power as the actual broadband output noise power of the device or circuit.
TYPICAL UNIT: Hz.
1-32 TEXAS •
INSTRUMENTS
GLOSSARY
Noise Equivalent Power (Pn or NEP)

The rms value of the fundamental component of a modulated radiant flux incident on the detector area
that will produce a signal (voltage or current) at the detector output that is equal to the broadband rms
noise (voltage or current).
TYPICAL UNIT: W.
NOTE: The noise equivalent power equals the broadband output noise (voltage or current) divided by the
responsivity (in volts/watt or amperes/watt).
Noise Equivalent Power (Spectral Density) (Pn or NEP)

IIc
o
The noise equivalent power in a one-hertz bandwidth at the detector output. '';::;
TYPICAL UNITS: W/Hz1/2.
as
-
E
~
NOTE: The noise equivalent power spectral density equals the noise equivalent power divided by the square o
root of the noise bandwidth.
c
Off-State Collector Current (lC(off)) (of an Optocoupler)
ca
~
The output current when the input current is zero. Q)
C
Q)
On-State Collector Current (lC(on)) (of an Optocoupler)
C!J
The output current when the input current is above the threshold level.
NOTE: An increase in the input current will usually result in a corresponding increase in the on-state collector
current.
Optical Axis
A line about which the radiant-energy pattern is centered.
NOTES: 1. The radiant-energy pattern may be nonsymmetrical.
2. The optical axis may deviate from the mechanical axis.
Optocoupler (Optically Coupled Isolator. Photocoupler)

A device designed for the transformation of electrical signals by utilizing optical radiant energy so as to
provide coupling with electrical isolation between the input and the output.
NOTE: As manufactured by Texas Instruments. these devices consist of a gallium arsenide infrared-emitting
diode and a silicon phototransistor and provide high-voltage isolation between separate pairs of input and
output terminals.
Optoelectronic Device
A device that is responsive to or that emits or modifies coherent or noncoherent electromagnetic radiation
in the visible. infrared. and/or ultraviolet spectral regions; or a device that utilizes such electromagnetic
radiation for its internal operation.
Photocurrent
The difference between light current (Ill and dark current (lD) in a photo detector.
TEXAS • 1-33
INSTRUMENTS
GLOSSARY
Photodetector, Photosensitive Device

A device that is responsive to electromagnetic radiation in the visible, infrared, and/or ultraviolet spectral
regions.
Photodiode
A diode that is intended to be responsive to radiant energy.
GRAPHIC SYMBOLS:
C)
CD
\\ \\
..
::::J
CD
e!.
-® -@-
....
o..
::::J NOTE: The photodiode is characterized by linearity between the input radiation and the output current .
It has faster switching speeds than a phototransistor.
3 Photometric Axis
m
r+
o·::::J See Axis of Measurement.
Photometric Brightness
See Luminance.
Photon
A quantum (the smallest possible unit) of radiant energy; a photon carries a quantity of energy equal to
Planck's constant (6.6262 x 10- 34 joule/hertz) times the frequency.
Phototransistor
A transistor (bipolar or field-effect) that is intended to be responsive to radiant energy.
NOTE: The base region or gate mayor may not be brought out as an external terminal.
GRAPHIC SYMBOLS:
Picture Element
The smallest segment of a raster line which can be discretely controlled by the display system. Also called
a pixel, pel, or pixcell.
Quantum Efficiency (of a Photosensitive Device)

The fractional number of effective electron-hole pairs produced within the device for each incident photon.
For devices that internally amplify or multiply the electron-hole pairs, such as phototransistors or avalanche
photodiodes, the effect of the gain is to be excluded from quantum efficiency.
1-34 TEXAS .."

INSTRUMENTS
GLOSSARY
OPTOELECTRONICS AND IMAGE"SENSING TERMS AND DEFINITIONS
Quantum Efficiency. External (of a Photoemitter)

The number of photons radiated for each electron flowing into the radiant source.
Radiance (Le)
The radiant intensity of a surface in a given direction per unit of projected area of the surface as viewed
from that direction.
TYPICAL UNIT: W.sr- 1 m- 2 .
Radiant Energy (Qe)

IIt:
o
Energy traveling in the form of electromagnetic waves. ",tj
CO
TYPICAL UNITS: W.s. J.
-
E
...o
Radiant Flux or Power Output (.e or PO)
t:
The time rate of flow of radiant energy.
TYPICAL UNITS: W. ca...
Q)
Radiant Intensity (Ie) t:
Q)
Radiant flux per unit solid angle in a given direction. e,:,
TYPICAL UNIT: W/sr.
Radiant Pulse Fall Time (tf)

The time required for a radiometric quantity to change from 90% to 10% of its peak value for a step change
in electrical input.
Radiant Pulse Rise Time (tr)

The time required for a radiometric quantity to change from 10% to 90% of its peak value for a step change
in electrical input.
Radiant Responsivity (Re)

The quotient of the rms value of the fundamental component of the electrical output divided by the rms
value of the fundamental component of the radiant flux of a specified distribution.
TYPICAL UNITS: V/W. A/W.
Resolution
The number of visible distinguishable units in the device coordinate space.
Reverse Current (lR)

The current through a semiconductor diode when the n region (cathode) is at a positive potential with
respect to the p region (anode).
Reverse Voltage (VR)

The voltage across a semiconductor diode associated with the flow of reverse current. The n region is
at a positive potential with respect to the p region.
TEXAS ~ 1-35
INSTRUMENTS
GLOSSARY
Rise Time (trl

The time duration during which the leading edge of a pulse is increasing from 10% to 90% of its maximum
amplitude.
Series Resistance
The undepleted bulk resistance of the photodiode substrate.
NOTE: This characteristic becomes significant at higher frequencies where the capacitive reactance of
the junction is of the same or lower magnitude compared to the series resistance.
G)
CD Shift Register
..
:::J
CD
!!.
A register in which the stored data can be moved from left to right, or vice versa.
-
..
:::J
o
3
....
g)
Spectral Bandwidth (A-AI
The wavelength interval in which the spectral concentration of a photometric or radiometric quantity is
not less than half of its maximum value .
TYPICAL UNITS: A, /Lm, nm.
o·:::J Steradian (sri

A unit of solid angular measurement equal to the solid angle at the center of a sphere subtended by a
portion of the surface area equal to the square of the radius; there are 4 71" steradians in a complete sphere.
The number of steradians in a cone of full angle () is 2 71" (1 - cos 0.5 ).
Storage Time (tsl

The'time interval from a point at which the trailing edge of the input pulse has dropped to 90% of its
maximum amplitude to a point at which the trailing edge of the output pulse has dropped to 90% of its
maximum amplitude.
Visible Emission
Radiant energy that is characterized by wavelengths of about 0.38 /Lm to 0.78 /Lm,
Wavelength at Peak Emission (Ap)

The wavelength at which the spectral radiant intensity is maximum.
TYPICAL UNITS: A, /Lm, nm. 1 A = 10 - 4 /Lm = 0.1 nm.
1-36 TEXAS •
INSTRUMENTS
CCO Image Sensors and Support Functions
2-1
n
n
c
3Q)
co
CD
en
CD
:::J
en
o
...
--enc:
en
"0
"0
...o
r+
"T1
c:
:::J
(')
r+
o·
:::J
en
2-2
VIRTUAL PHASE
IMAGE SENSING TECHNOLOGY BREAKTHROUGH
The CCD (Charge Coupled Device) approach to linear image

-_.---------.--<1>1 sensing will become the leading edge among industry methods
"VIRTUAL"
ELECTRODE because of process and performance advantages.
Multiple-clock-electrode CCD processing methods have re-
mained complex and difficult to implement in the manufacturing
environment with any measure of cost/performance effectiveness
... until now.
The breakthrough: Now, Texas Instruments announces

a breakthrough in CCD image sensor processing technology ...
n. Patontod Virtual Pha.o Oo.ign
•
Fig. 1 Virtual Phase (VP).
This giant technological stride greatly simplifies the processing
techniques by reducing the number of clock electrodes on the
device surface to one (Fig. 1). Other techniques require any-
where from two to three levels (Fig. 2). Additional benefits of this
milestone process include simplified device operation and en- VI
hanced device quality.
t:
Now, with just one level, the possibility of surface damage and .2
~
shorts, common to the multilevel approach, is inherently reduced. (,)

So, the new Virtual Phase technology can boast the same degree t:
:::l
of reliability as standard MOS technology.
-~
~
LL
: e --_ :
I The benefits ofthis TI-patented Virtual Phase technology are: ...
~
o
____' :
I ',I
L ___ ., ". : • Simplified clocking
0.
I'- ___ .II B'
• ___ J
L • Lower noise/Higher dynamic range 0.
• Greater sensitivity to light :::l
en
Fig. 2 Standard 2 Phl.o O•• ign
10.0
•
•
•
Ease of processing and use
Greater stability
Lower dark current
--...
VI
o
I-t- TYPICAL SPECTRAL RESPONSE - l - VI
• Improved spectral response in the lower wave length (blue) t:
regions (Fig. 3). Q)
I-'" r\ Features: en
....
~
~
I
, • Virtual Phase N-Channel silicon MOS technology
• High spectrall"esponsivity ... particularly in the blue region
• Appl"Oximately I-V peak-to-peak output signal
Q)
0)
C'a
E
~ 1.0 1\ Dynamic range typically 1000:1
..
~
ill
ITHOUT FILTER End-of-scan signal
• Internal dark and white references
o
(J
(J
'" • Blemish-free unifOlmity of image
• Simple, stable operation
0.1
400 500 600 100 800 900 1000
WAVELENGTH NANOMETERS
Fig. 3. Typical Sensitivity vs Wavelength
TEXAS ~ 2-3
INSTRUMENTS
•
(")
(")
c
3Q)
(Q
CD
en
CD
j
tn
o...
-
tn
en
c
'C
'C
.......o
."
C
j
....
(")
o·
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tn
2-4
TC102
128 x 1 CCD LINEAR IMAGE SENSOR
D2664, APRIL 1982-REVISED JULY 1989
• 128 x 1 Sensor Element Organization

CERAMIC DUAL-IN-L1NE PACKAGE
• Virtual-Phase N-Channel Silicon MOS
Technology
(TOPVIEWI
• High Quantum Efficiency

VSS
• Enhanced Blue Response VREF
• Output Signal Approximately
OS 2 9 VSS
00
1 Volt Peak-to-Peak
•
Dynamic Range Relative to 8 EOS
Peak-to-Peak Noise Typically 1000: 1
VOO 3
• End-of-Scan Signal TCK 4 RCK

• Internal Black and White References
WRCK XCK
f/l
c:
• Simple and Stable Operation 5
o
';;
(,)
c:
:::s
u.
.....
Caution, These devices have limited built-in gate protection, The leads should be shorted together or the device o
placed in conductive foam during storage or handling to prevent electrostatic damage to the MaS gates, Avoid c.
shorting either as or EOS to VSS during operation to prevent damage to the output amplifiers, c.
:::s
en
description
--..
o
f /l
f/l
The TC102, a 1 28-element CCD line image sensor, functions in high-resolution image scanning applications such as c:
Q)
document reading and optical character recognition. The TCl 02 incorporates virtual-phase MaS technology, which
provides simplified operation and high reliability. en
Q)
This device is supplied in a 1 O-pin dual-in-line ceramic side-braze package designed for insertion in mounting-hole rows 0)
on 7,6-mm (0.300-inchl centers. The glass window may be cleaned by wiping with a cotton swab soaked in alcohol. Ctl
E
virtual-phasa technologv Q
This patented design results in simplified clocking circuits, reduced noise, and greater light sensitivity. Virtual-phase U
technology utilizes a junction-gate region at the substrate dc potential. This accomplishes the same gating and U
transport function as a separate gate electrode requiring multiple layers and multiple process steps common in other
device designs. The resulting simplicity of process and ease of operation will increase performance and reliability for
the user.
PRODUCTION DATA d.cumonis conllin information Copyright © 1989. Texas Instruments Incorporated
currant 8S of publication date. Products conform to
specifications per tb. terms of TaxIs Instruments
TEXAS . " 2-5
=::~~~1{::,~1~ =:~i:; lI~D:=::::~:::'1 nat INSTRUMENTS
TC102
functional block diagram
TCK
DARK CURRENT BUFFER CCD VDD
DS
VDD
VREF
EOS
("')
("') WRCK XCK TCK
I RCK
c VSS
SUBSTRATE AND
LIGHT SHIELD
3 W = WHITE REFERENCE INPUT DIODE
B = BLACK REFERENCE ELEMENT
III
(Q I = ISOLATION ELEMENT
CD N = 128 SENSOR ELEMENTS
fJ)
CD
::J
VI PIN FUNCTIONAL DESCRIPTION
o
...
--
VI
fJ)
C
PIN
NUMBER
1
SIGNATURE
VREF
NAME
Reference Voltage
DESCRIPTION
Bias input for the output amplifiers.

"0 2 OS Output Signal Video output from a cascaded source-follower MOS amplifier.
"0 3 Supply Voltage Output amplifier supply voltage.
...o
r+
4
VDD
TCK Transport Clock Drives the ceo transport registers.
5 WRCK White Reference Clock Injects a controlled charge into the white reference ceo shift register
"
C
::J
(')
6 XCK Transfer Clock
elements to become white-reference and end-af-scan pulses.
Controls the transfer of charge packets from sensor elements to shift
registers. The interval between pulses of the transfer clock determines
r+
O· the exposure time.
::J 7 RCK Reset Clock Controls recharging of the charge-detection diodes in the output
VI amplifiers, and clocks the output shift registers where the odd and
even signals have been merged.
8 EOS End-of-Scan Pulse Indicates that all charge packets have been shifted out of the
transport registers.
9,10 VSS Substrate All voltages are referenced to the substrate.
2-6 TEXAS •
INSTRUMENTS
TC102
128 x 1 CCO LINEAR IMAGE SENSOR
functional description
image sensor elements
The line of sensor elements (also called photosites or pixels) consists of 128 photo-sensitive areas, 12.7 micrometers
(0.5 milliinches) square and approximately 12.7 micrometers from center to center. Image photons create
electron-hole pairs in the single-crystal silicon. The electrons are collected in the sensor elements and the holes are
swept into the substrate. The amount of charge accumulated in each element is a linear function of the incident light
and the exposure time. The output signal charge will vary in an analog manner from a thermally generated noise
background at zero illumination to a maximum at saturation under bright illumination.
transfer gate
This structure is adjacent to the line of image sensor elements. The charge packets accumulated in the image sensor
elements are transferred into the transfer gate storage well when the transfer gate voltage goes high. When the
transfer gate voltage goes low, the charge is transferred into the CCO transport shift registers. The transfer gate also
controls the exposure time for the sensor elements and permits charges to enter the end-of-scan (EOS) shift registers
to create the end-of-scan waveform. In addition, the transfer gate permits entry of charge packets to the transport
CCO shift register to create the white reference signals.
en
c:
o
shift registers "';:
(.)
There are two CCO transport registers, one on each side of the line of image sensor elements and outside of the c:
transfer gate. Alternate charge packets are transferred to the CCO transport shift registers and moved serially to the :::::I
output amplifier. The phase relationship of the reset clock and the transport clock and the geometric layout of the
paths provide for alternate delivery of charge packets to re-establish the original sequence of the linear image data. The
...
LL.
~
two outer buffer CCO shift registers protect the signal charges in the inner transport CCO shift registers from o
C-
peripherally generated dark current noise. o..
:::::I
black and white reference elements
Four additional sensor elements at each end of the sensor element array (labelled "8" in the block diagram) are covered
by opaque metallization. They provide a black (no illumination) signal reference that is delivered at each end of the
--
CJ)
en
o
~
en
linear image output signal. Also included on the transport CCO shift register, at the opposite end from the amplifier, is c:
an input diode that provides two white reference pulses in the output signal. The reference pulses are useful as inputs CIJ
CJ)
to external dc restoration and/or automatic exposure control circuitry. The white reference pulse amplitude is
approximately 70% of the maximum output signal amplitude. CIJ
C)
output signal amplifier

ca
E
The charge packets are transported to a precharge diode whose potential changes linearly in response to the amount of
the signal charge delivered. This potential is applied to the input gate of an N-channel MaS double-source-follower c
amplifier to produce an output signal (aS). A reset transistor, driven by the reset clock (RCK), recharges the charge- u
detector-diode capacitance before the arrival of each new signal charge packet from the CCO shift registers. A u
reference voltage (VREF) is applied to the drain of the reset transistor and acts to bias the as and EOS amplifiers. A
current sink is used as an on-chip load for the amplifier output. No external current sink is needed. The output signal is a
series of negative-going pulses on a dc level.
TEXAS .." 2-7

INSTRUMENTS
TC102
128 x 1 ceo LINEAR IMAGE SENSOR
resolution
The modulation transfer function decreases at longer wavelengths (see Figures 7 and 8). If optimum resolution is
required with a light source that has a significant infrared component, then the designer must use appropriate filters to
restrict the optical pass band to. shorter wavelengths.
end-of-scan amplifier
The EOS amplifier is similar to the OS amplifier. XCK transfers charge from the input diode into the EOS register where
it is transported at the TCK clock frequency to the EOS amplifier. This EOS pulse is coincident with the first of the two
white reference pulses that pass through the odd and even transport CCOs, respectively. The EOS output can be used
to alert the external circuitry that the linear image data readout has been completed.
clocks
The transfer clock (XCK) pulse controls the exposure time of the sensor elements. The minimum exposure time is the
time required to shift the entire contents of the transport registers to the output signal amplifier and equals 1 61
multiplied by the RCK period. The maximum exposure time is determined by the tolerable level of dark signal.
n The transport clock (TCK) transports the linear image signal charge from the sensor element region to the output
n amplifier.
c The reset clock (RCK) operates at twice the transport clock frequency so as to recombine the signal charge in the
3
Ql
original sequence and present the charge to the output amplifier. The data rate is equal to the reset clock frequency.
CQ The white reference clock (WRCK) runs at the transfer clock frequency and generates the white reference and the end-
CD of-scan pulses. These pulses can be eliminated by connecting WRCK to VOO. Transients on WRCK going below zero
(f) volts will cause charge injection resulting in an increase in apparent dark signal.
CD Figure 3 presents a suggested circuit for generating the clock waveforms. The RCK clock generator runs continuously.
:::l
en A binary divider halves the frequency to create TCK. After all signal charges have been transported to the output
o
...
-
amplifier, TCK continues to run to keep thermally generated charges from accumulating in the transport registers .
en The XCK and WRCK clock frequencies are submultiples of the TCK frequency. Figure 2 details the timing relationships
( f) among the different clock pulses.
c:
"C
"C
...
o
r+
"T1
c:
:::l
(')
r+
o·
:::l
en
2-8 TEXAS . "

INSTRUMENTS
TC102
XCKJl"'.o--------------»--- EXPOSURE TIME -----------------iR

..... L-
WRCKU tl U-
U)
c:
.2
....
(.)
Output Signal (aS) pulse identification: c:
I == Isolation pixel :l
IP == Image pixel U.
8 "" Black reference pixel .......
W = White reference pixel o
X .:: Empty pixel c.
C.
FIGURE 1 - OPERATING INPUT AND OUTPUT VOLTAGE WAVEFORMS :l
en
--...
U)
o
U)
c:
Q)
en
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) (see Note 1) Q)
C)
Amplifier drain voltage (VOOI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 0.3 V to 30 V ctI
Amplifier reference voltage (VREFI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3 V to 30 V E
Transfer clock (XCKI voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 2 5 V to 5 V
Transport clock (TCKI voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 25 V to 5 V
Q
()
Reset clock (RCKI voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. _ 25 V to 5 V
()
White reference clock (WRCK) voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 0.3 V to 30 V
Storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 250C to 1 250C
Operating free-air temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _ 250C to 70 0C
NOTE 1: Voltage values are with respect to Vss.
TEXAS " , 2-9

INSTRUMENlS
TC102
recommended operating conditions at T A
MIN NOM MAX UNIT

Voo Supply voltage 15 16 20 V
VREF Amplifier reference voltage 6 7 8 V
VIH(X) Transfer clock high-level input voltage 1 2 3 V
VIL(X) Transfer clock low-level input voltage -17' -16 -15 V
VIH(T) Transport clock high~level input voltage 1 2 3 V
VIL(T) Transport clock low~level input voltage -1n -16 -15 V
VIH(RI Reset clock high-level input voltage 1 2 3 V
VILIR) Reset clock low-level input voltage 1n 16 15 V
VIH(WR) White reference clock high-level input voltage 15 16 20 V
•
VIL(WR) White reference clock low-level input voltage 6 7 8 V
fRCK Reset clock frequency (output data rate) 2 10 MHz
,The algebraic convention, where the most negative limit is designated as minimum. is used in this data sheet for clock voltage levels only.
(")
(") electrical characteristics at 25°C free-air temperature. fRCK = 0.5 MHz. texp = 10 ms. tungsten light
o source operating at color temperature of 2854 Kwith 2.0-mm-thick Fish-Schurman HA-11 IR-absorbing filter.
and all operating voltages at nominal recommended values.
3I:\) PARAMETER MIN TYP MAX UNIT
CQ Average 0.5 10
CD Low frequency component 0.5 5
Dark-signal amplitude mV
en
CD
Nonuniformity relative to
1 20
average of adjacent pixels
:::l Sensitivity 2 3.5 5 V/I~J/cm2)
en
o... I Peak-to-peak 50 100
-
Output amplitude
en variation IPRNUlt
Adjacent pixels from
10
mV
ec:n Peak-ta-peak noise

alternate registers (imbalance)
1 mV
~ Equivalent exposure § of peak-to-peak noise 0.35 nJ/cm 2
~ Saturation exposure § 350 nJ/cm 2
...o... Saturation output amplitude

Dynamic range relative to peak-to-peak noise t
700
500:1
1000
1000:1
1400 mV
"T1 Charge transfer efficiency 0.99999

c: White reference amplitude 500 700 mV
:::l
...O·
(") End-at-scan amplitude
Output offset Idc) voltage
300 500
10
mV
V
Output impedance 1 kQ
:::l
en Transfer gate 45
Resistance to VSS Transport gate 45 kQ
Reset gate 45
Transfer gate 26
Capacitance to VSS Transport gate 57 pF
Reset gate 7
IREF Amplifier reference current 3 nA
100 Supply current 6.3 9.4 mA
Power dissipation 100 mW
tOynamic range = saturation output amplitude/standard deviation peak-to-peak noise.

:j:Measured at 700 mV output amplitude with an f/2.8 lens.
§ Exposure = intensity x time
2-10 TEXAS •
INSTRUMENTS
TC102
timing requirements
MIN NOM MAX UNIT

Time delay from the transport clock rising
'THXH 0 100 ns
edge to the transfer clock rising edge
Time delay from the transport clock rising edge
'THWL 0 100 ns
to the white reference clock falling edge
'THRH 0 ns
edge to the reset clock rising edge
Pulse duration of the high state for the reset
'wlRHI 40 ns
clock
Time delay from the transport clock falling
'TLXL 50 ns
edge to the transfer clock falling edge
Time delay from the transport clock falling edge
'TLWH 0 100 ns
to the white reference clock rising edge
Time delay from the transfer clock falling edge
'XLTH to the rising edge of the next transport clock 50 ns

pulse
rise time (all clocks) 15 ns
"'f fall time (all clocks) 5 ns
......
o
0.
~ t4""tTHXH 0.
I :J
XCK
it
i
\
~ITLXL----t ' - - - - - - - - - - - - - - - - - - -
--o...
rJJ
VJ
I I ,.. .ltXLTH VJ
-+I ~ITHWL
WRCK
!~ ! ~r----~i----------------
I I C
(I,)
rJJ
I
I
I.-.---""';I-J:
I I
I (I,)
C)
I ~tTLwH I CO
TCKJ, I
" ~ ________J
fr--------,\ ~----------- o
u
E
'THRH~ ~
l~tw(RHI u
I
RCK
os
FIGURE 2 - DEVICE TIMING REQUIREMENTS
TEXAS
INSTRUMENTS
"-11 2-11

~
N
SUO!l3Un~ l-/oddns/sJosuas a6ewl 0:>:> II
--I
Nn
CICI-
XN =
n
n
=
....
iii
I I
11121 TLD369 DEVICE
m
VCC~ >
22 n
UNDER TEST
RCK VOO
Vr
"'C
=
i
10 kn
»
::IJ >
22 n I » I:)
m
XCK VREFl..---.l' s:m en
(3 -I m
~ m 2
::IJ en
~- s:m CI
~z
~~
5knZ'lo.'"F
+5V ~
=
WRCK
~;;Cr;;1 C
::IJ
2C:~
~3:
VCC~
Vss
m
s:
m
~,." Z
~Z .... -I
~~~~
~
~
~
~
.--
I
I
VEE·
TLD369
vcct
B 22 n
TCK Z
"T1
0
::IJ
s:
»
0.1 j.J.F
VJ as EOS -I
I VEEt
0
Z
o ... 0 TEST POINTS
tThis counter chain counts transport clock periods to generate the exposure time interval. The data rate is twice the count rate.
lVCC and VEE are the voltages that will produce the desired values of VIH and VILt respectively, at the RCK, XCK, and TCK inputs.
FIGURE 3 - DRIVER CIRCUIT FOR TESTING LINE IMAGE SENSOR

TC102
A
I
B
---.J I
L
I
C -, r-
D ..J L-
E..J I
I
F ----y----------------------------------------------------
"'xp Trigger I
I
TCK --.J
I
XCK --.JI
RCK
I
I n n n n ~
WRCK ---, I
FIGURE 4 - WAVEFORMS IN DRIVER CIRCUIT .....

...
o
Co
TYPICAL CHARACTERISTICS C.
:::l
en
(In the circuit of Figure 3 with TA = 25°C, fRCK
recommended values, unless otherwise noted)
= 0.5 MHz, texp = 10 ms, and all operating voltages at nominal
--...
en
o
SENSITIVITY RESPONSIVITY en
vs vs I:
WAVELENGTH OF INCIDENT LIGHT Q)
WAVELENGTH OF INCIDENT LIGHT
10 en
100%...- 1-70%=
~~ 1'f\ e,nc'\eoc'I Q)
r--~t\l ~%- C)
"
----- K rr-
0.4 CO
~ V I~ ~
" E
poe
F \ \ withQut filter fY .....- ~ ~ H~-
~ I--"""" ~ c
\With
HA·lllilter '\ I
.~ 0.1
.....- V ~~ 10%_
u
u
'\
\
\
\
~
."c
8.
~ 0.04
~
r--
-laTnT
100% quantum efficiency
is 0.B0657A A/W
\
\
\
'\
0.1 om I I
400 600 BOO 1000 1200 400 600 BOO 1000 1200
Incident Wavelength - nm Incident Wavelength - nm
FIGURE 5 FIGURE 6
TEXAS " , 2-13

INSTRUMENTS
TC102
TYPICAL CHARACTERISTICS
(In the circuit of Figure 3 with TA = 25°C, fRCK = 0.5 MHz, t exp = 10 ms, and all operating voltages at nominal
MODULATION TRANSFER FUNCTION MODULATION TRANSFER FUNCTION
--
vs v,
SPATIAL FREQUENCY SPATIAL FREOUENCY
1.0
1.0 -=:: , '-
e:
0
"13
~ ,itho~t filter e:
0
"fle:
~ ~00to700nm
0.8 0.8
A=9~ 0
e:
~~
"
L1.
~1!
, "
U-
II
0.6 0.6
~
""
i"
l- l-
e: e:
0 0
'f;; 0.4
.~
0.4
:; :;
(") ."
0
."
2854 K Light 0 Monochromatic Light
(") ::;; ::;;
o L1.
I-
0.2
I
L1.
I-
0.2
::;; ::;;
3
Ql o o
CO o 0.2 0.4 0.6 0.8 1.0 o 0.2 0.4 0.6 0.8 1.0
CD Normalized Spatial Frequency Normalized Spatial Frequency
en
CD
o 7.9 15.8 23.6 31.5 39.4 o 7.9
! I
15.8
I
23.6
I
31.5 39.4
Spatial Frequency - cycles/mm Spatial Frequency - cycles/mm
::::I
(I)
FIGURE 7 FIGURE 8
o
...
--en
(I)
s:::
'0
AVERAGE AND LOW-FREQUENCY
DARK SIGNAL
v,
OUTPUT SIGNAL VOLTAGE RELATIVE TO
SATURATED OUTPUT VOLTAGE
v,
'0 EXPOSURE TIME
o
...
... 10
'#.
I
100r----,----~----~--~~----_,
"
s:::
::::I
/
i'J,
~
'0
80~--~----~----1+----_+----~
...o·
(')
>
E ij
",;:,~v//
~<o aU
l'
>
"
~601---+---.j,.<--+----b,L.---l
..
I ,,~ij 00
::::I
(I)
ro
§, / / ~~~ ;i9v
., 'C
E
Cii ~ i"
-i' ~/ ~?-/ E 40 f----+--/--+---7"~i
ell
8 0.1
//
/ f 20
0.01
/ V / ~ ~~:::±=t=:J
0.1 10 100 4 6 8 10
texp - Exposure Time - ms t exp - Exposure Time - ms
FIGURE 9 FIGURE 10
2-14 TEXAS •
INSTRUMENTS
POST OFFICE BOX 655303 • DALLAS, TEXAS 752e5
TC102
MECHANICAL DATA
3.81 (0.150)
0,81 (0.032)R NOM
No.1 SENSOR ELEMENT -
8.10 (0.319)
7.75 (0.305)
Q 234
5,82 (0.229)
5,56 (0.219)
5 C/)
c:
o
+'"
(,,)
c:
7.49 (0.295)
::s
u.
LJ
7.24 (0.285)
I
4,19 (0.165)
1'-1,19 (0.047) MAX
,
2,97 (0.117)
2,36 (0.093) ...
+'"
o
c..
c..
::s
en
-s EATING PLANE-------'I----+
3,07 (0.121)
f --...o
C/)
3,81 (0.150) C/)

3,05 (0.120) c:
. II _ 0,30 (0.012)
~r- 0,25 (0.010) 1,42 (0.056)
1,12 (0.044)
U 2,54 (0.100) NOM
...-J '-- 0.48 (0.019)
11- 0,38 (0.015)
(1)
en
(1)
0)
CtI
E
NOTES: 1. All dimensions are in millimeters and parenthetically in inches. Cl
2. The distance between the top surface of the window and the surface of the sensor is nominally 0,89 (0.035). This is u
determined by observing the vertical motion of a microscope focused first at one plane, then at the other. U
TEXAS ~ 2-15
INSTRUMENTS
(')
(')
c
3
Dl
co
C1l
C/)
C1l
~
til
o...
--
til
C/)
r:::
't:I
't:I
o...
~
2-16
TC102-1
02664, DECEMBER 1983-REVISED JULY 1989
CERAMIC DUAL-IN-LiNE PACKAGE

• 128 x 1 Sensor Element Organization
(TOP VIEW)
Technology
• High Quantum Efficiency VREF VSS
00:
• Enhanced Blue Response
OS 2 VSS
• Output Signal Approximately 1 Volt
Peak-to-Peak
VOO 3 EOS
• Dynamic Range Relative to
Peak-to-Peak Noise Typically 1000:1
TCK 4 RCK
• End-of-Scan Signal
• Internal Black and White References WRCK 5 XCK
• Simple and Stable Operation
• Same as TC102 Except for "White
Reference Amplitude" and "End-of-Scan
Amplitude" Specifications
description
The TC1 02-1, a 128-element CCD line image sensor, functions in high-resolution image scanning applications such
as document reading and optical character recognition. The TC102-1 incorporates virtual-phase MOS technology, ...o
~
which provides simplified operation and high reliability.

0.
0.
-
Caution. These devices have limited built·in gate protection. The leads should be shorted together or the device :::J
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Avoid en
shorting either OS or EOS to VSS during operation to prevent damage to the output amplifiers. en
~
o
virtual phase technology en
c::
Q)
This patented design results in simplified clocking circuits, reduced noise. and greater light sensitivity. Virtual-phase
technology utilizes a junction-gate region at the substrate de potential. This accomplishes the same gating and en
transport function as a separate gate electrode requiring multiple layers and mUltiple process steps common in other Q)
device designs. The resulting simplicity of process and ease of operation will increase performance and reliability for C)
ell
the user.
E
o
u
u
PRODUCTION DATA d••um••ts •••tei. i.f.rmati•• Copyright © 1989, Texas Instruments Incorporated
current as of publication dati. Products conform to
specifications par the terms of Texas Instruments
TEXAS • 2-17
:'~=~~i~ar::,~li ~!~~~i:; :I~o:.a;:::~:~~s not INSTRUMENTS
1C102·1
TCK
DARK CURRENT BUFFER CCD VDD
os
VDD
•
VREF
EOS
("')
("') I
c WRCK XCK TCK VSS
SUBSTRATE AND
RCK
LIGHT SHIELD
3
Q)
W" WHITE REFERENCE INPUT DIODE
B " BLACK REFERENCE ELEMENT
c.c I " ISOLATIDN ELEMENT
CD N" 128 SENSOR ELEMENTS
en
CD
:::s
VI PIN FUNCTIONAL DESCRIPTION
o...
--enc:
VI
't:I
PIN
NUMBER
1
SIGNATURE
VREF
NAME
Reference Voltage
DESCRIPTION
Bias input for the output amplifiers.

2 OS Output Signal Video output from a cascaded source-follower MOS amplifier.
't:I
o
... 3 VDD Supply Voltage Output amplifier supply voltage.
4 TCK Transport Clock Drives the CCD transport registers.
-+
5 WRCK White Reference Clock Injects a controlled charge into the white reference CCO shift register
"T1
c: elements to become white-reference and end-at-scan pulses.
:::s 6 XCK Transfer ,Clock Controls the transfer of charge packets from sensor elements to shift
"O·-+ registers. The interval between pulses of the transfer clock determines
the exposure time.
:::s 7 RCK Reset Clock Controls recharging of the charge-detection diodes in the output
VI amplifiers, and clocks the output shift registers where the odd and
even signals have been merged.
8 EOS End-aI-Scan Pulse Indicates that all charge packets have been shifted out of the
transport registers.
9,10 VSS Substrate All v(..ltages are referenced to the substrate.
2-18 TEXAS •
INSTRUMENTS
TC102-1

The line of sensor elements lalso called photosites or pixels) consists of 128 photo-sensitive areas, 12.7 micrometers
10.5 milliinches) square and approximately 12.7 micrometers from center to center. Image photons create
electron-hole pairs in the single-crystal silicon. The electrons are collected in the sensor elements and the holes are
swept into the substrate. The amount of charge accumulated in each element is a linear function of the incident light
and the exposure time. The output signal charge will vary in an analog manner from a thermally generated noise
transfer gate
controls the exposure time for the sensor elements and permits charges to enter the end-of-scan lEaS) shift registers
I/)
CCO shift register to create the white reference signals. r=
o
-.;:::
shift registers
(.)
There are two CCO transport registers, one on each side of the line of image sensor elements and outside of the r=
transfer gate. Alternate charge packets are transferred to the CCO transport shift registers and mov"ed serially to the
::J
......
LL
o
two outer buffer CCO shift registers protect the signal charges in the inner transport CCO shift registers from c.
peripherally generated dark current noise. C.
::J
en
by opaque metallization. They provide a black Ina illumination) signal reference that is delivered at each end of the
--...
I /)
o
I/)
linear image output signal. Also included on the transport CCO shift register, at the opposite end from the amplifier, is r=
Q)
an input diode that provides two white reference pulses in the output signal. The reference pulses are useful as inputs
to external dc restoration and/or automatic exposure control circuitry.
en
Q)
C)
output signal amplifier CO
The charge packets are transported to a precharge diode whose potential changes linearly in response to the amount of E
the signal charge delivered. This potential is applied to the input gate of an N-channel MaS double-source-follower
amplifier to produce an output signal lOS). A reset transistor, driven by the reset clock IRCK), recharges the charge-
o
(,)
detector-diode capacitance before the arrival of each new signal charge packet from the CCO shift registers. A
(,)
reference voltage IVREF) is applied to the drain of the reset transistor and acts to bias the as and EOS amplifiers. A
current sink is used as an on-chip load for the amplifier output. No external current sink is needed. The output signal is a
TEXAS . " 2-19

INSTRUMENTS
POST OFFICE BOX 655303 • DALL.AS, TEXAS 75265
TC102·1
resolution
The modulation transfer function decreases at longer wavelengths (see Figures 7 and 8). If optimum resolution is
restrict the optical pass band to shorter wavelengths.
. it is transported at the TCK clock frequency to the EOS amplifier. This EOS pulse is coincident with the first of the two
white reference pulses that pass through the odd and even transport CCDs, respectively. The EOS output can be used
•
clocks
time required to shift the entire contents of the transport registers to the output signal amplifier and equals 1 61
C')
C') The transport clock ITCK) transports the linear image signal charge from the sensor element region to the output
c amplifier.
The reset clock (RCK) operates at twice the transport clock frequency so as to recombine the signal charge in the
3Q) original sequence and present the charge to the output amplifier. The data rate is equal to the reset clock frequency.
co The white reference clock (WRCK) runs at the transfer clock frequency and generates the white reference and the end-
(1)
of-scan pulses. These pulses can be eliminated by connecting WRCK to VDD. Transients on WRCK going below zero
en
(1)
volts will cause charge injection resulting in an increase in apparent dark signal.
::J Figure 3 presents a suggested circuit for generating the clock waveforms. The RCK clock generator runs continuously.
VI A binary divider halves the frequency to create TCK. After all signal charges have been transported to the output
...
o amplifier, TCK continues to run to keep thermally generated charges from accumulating in the transport registers .
--enc:
VI
The XCK and WRCK clock frequencies are submultiples of the TCK frequency. Figure 2 details the timing relationships
among the different clock pulses.
"0
"0
...o...
"T1
c:
::J
(')
::!'.
o
::J
VI
2-20 TEXAS . "

INSTRUMENTS
TC102-1
XCK~~.~---------------------------------EX~RETIME----------------------------~r:1~~
N
WRCKU
os
en
s:::::
o
'';;
Output Signal (OS) pulse identification: (.)
I = Isolation pixel s:::::
rp = Image pixel ::l
B = Black reference pixel
W
X
= White
=
reference pixel
Emptv pixel
......o
LL
FIGURE 1 - OPERATING INPUT ANO OUTPUT VOLTAGE WAVEFORMS

c.
C.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) (see Note 1)
-...
::l
en
en
o
en
Amplifier drain voltage (VOO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 0.3 V to 30 V s:::::
Q)
Amplifierreference voltage (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3 V to 30 V
Transfer clock (XCK) voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 25 V to 5 V
en
Q)
Transport clock (TCK) voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 25 V to 5 V
Reset clock (RCK) voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 25 V to 5 V
c:n
CO
White reference clock (WRCK) voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 0.3 V to 30 V
Storage temperature ... .. ..... . . . . . . . . . .... . . . . . . . . . . . . . . . . . . . . . . . . -25°Cto 125°C
E
Operating free-air temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 25°C to 70 °C c
u
u
TEXAS " , 2-21

INSTRUMENTS
TC102·1
recommended operating conditions at T A 25°C

MIN NOM MAX UNIT
VOO Supply voltage 15 16 20 V
VREF Amplifier reference voltage 6 7 8 V
VIH(X) Transfer clock high-level input voltage 1 2 3 V
VIL(X)
VIH(T)
Transfer clock low-level input voltage
Transport clock high-level input voltage
-17' 1
16
2
-15
3
V
V
VIL(T)
VIH(R)
Transport clock low-level input voltage
Reset clock high-level input voltage
-17' 1
-16
2
-15
3
V
V
VIL(R) Reset clock low-level input voltage 17' 16 15 V
tReK Reset clock frequency (output data rate) 2 10 MHz
,The algebraic convention, where the most negative limit is designated as minimum, is used in this data sheet for clock voltage levels only.
C')
C') electrical characteristics at 25°C free-air temperature. fRCK = 0.5 MHz. texp = 10 ms. tungsten light
c source operating at color temperature of 2854 Kwith 2.0-mm-thick Fish-Schurman HA-11 IR-absorbing filter.
and all operating voltages at nominal recommended values.
3
Dl PARAMETER MIN TYP MAX UNIT
CQ Average 0.5 10
CD
Low frequency component 0.5 5
en
CD
Dark-signal amplitude
Nonuniformity relative to
1 20
mV
::l average of adjacent pixels

en Sensitivity 2 3.5 5 V/(~J/em2)
...
o
en Output amplitude
I Peak-to-peak
Adjacent pixels from
50 100
mV
---s::en variation (PRNU)t
Peak-to-peak noise
1
10
mV
'0 Equivalent exposure § of peak-to-peak noise 0.35 nJ/em 2
'0
o
... Saturation exposure § 350 nJ/em 2
..... Saturation output amplitude 700 1000 1400 mV

Dynamic range relative to peak-to-peak noise t 500:1 1000:1
"
s::
::l
(")
Charge transfer efficiency
White reference amplitude
0.99999
500 mV
..... End-of-scan amplitude 300 mV
o· Output offset (de) voltage 10 V
::l Output impedance 1 kQ
en Transfer gate 45
Resistance to VSS Transport gate 45 kQ
Reset gate 45
Transfer gate 26
Capacitance to VSS Transport gate 57 pF
Reset gate 7
IREF Amplifier reference current 3 nA
IDD Supply current 6.3 9.4 mA
Power dissipation 100 mW
tDynamic range = saturation output amplitude/standard deviation peak-to-peak noise.

iMeasured at 700 mV output amplitude with an f/2.8 lens.
§Exposure =
intensity x time
2-22 TEXAS •
INSTRUMENTS
TC102·1
timing requirements
MIN NOM MAX UNIT

'THXH 0 100 ns
'THWL 0 100 ns
'THRH 0 ns
Pulse dUration of the high state for the reset
'wIRHI 40 ns
clock
'TLXL 50 ns
'TLWH
'XLTH
to the rising edge of the next transport clock
pulse
0
50
100 ns
ns
II
I, rise time (all clocksl 15 ns
If fall time (all clocks) 5 ns
-.I !4""'THXH
......
XCK :1 rV \~________________ o
c.
i ~'TLXL---t C.
---.tI II r"---I..~II tXLTH :::::I
en
WRCK
:I\L
I '
j4-'THWL
I ~r-~----~i--------------------------
---------i:i--"T:I Ii
....
--o...
UJ
I I UJ
I I I I:
I ~'TLWH Q)
en
TCKJ""'-------", ,.----------.\
Q)
I ~---------- Cl
CO
ITHRH~
~t 'r~ ~--I ~tf
RCK......_ _....
h""WI_RH_1 --Jf\'----__ -"l\i n'--___ o
E
(.)
(.)
os
BLACK REFERENCE LEVEL
FIGURE 2 - DEVICE TIMING REQUIREMENTS
TEXAS • 2·23
INSTRUMENTS
I\)
N
suor~::)Un~ JJoddns/sJosuas a6ewl G:>:> II
-1>0 --I
Nn
=-
=
X ':'0'
SN74LS626
+5V VCO
n
n
a
!::
I I vr
(1/2) TLD369
DEVICE iii!:
m
Vcc t UNDER TEST :z:o
:::a
2212
RCK Voo ., 3!:
l>
10 kH ;JJ :z:o
22n I l> C':I
XCK VREFL....l s:m m
en
@ -t m
m 2
en
!i:
~z 5knZ" 1001"F ;JJ
s:m Q
:::a
~~ +5V
l>
en
b:lr;;l WRCK
C
;JJ
8C~
,;~
Vcc t m
s:m
~fTI Z
!;Z ... -t
§(jj~.
~
~
~
'"
~
TLD369
Vcc t
B 22n
TCK Z
"T1
0
;JJ
s:
l>
0.1 jJF
VJ
VEEt as EOS -t
(5
Z
(3) ." 0 TEST POINTS
fThis counter chain counts transport clock periods to generate the exposure time interval. The data rate is twice the count rate.
tVee and VEE are the voltages that will produce the desired values of VIH and VIL. respectively, at the RCK. XCK, and TCK inputs.
FIGURE 3 - DRIVER CIRCUIT FOR TESTING LINE IMAGE SENSOR

TC102·1
A
I
B
~ L
C -, r-
D
-1 L-
E -1
F ----v~----------------------------------------------
texp Trigger I
I
TCK~
I
XCK~
I en
RCK c:
o
WRCK - - - '....
' _ _ _ _ _ _...J
FIGURE 4 - WAVEFORMS IN DRIVER CIRCUIT
....
+'"
o
TYPICAL CHARACTERISTICS c..
c..
(In the circuit of Figure 3 with TA = 25°C, fRCK = 0.5 MHz, t exp = 10 ms, and all operating voltages at nominal :::I
recommended values, unless otherwise noted) en
---....en
SENSITIV ITY RESPONSIVITY o
vs vs en
WAVELENGTH OF INCIDENT LIGHT WAVELENGTH OF INCIDENT LIGHT c:
Q)
10
. "" 100% ..... -70%= en
~<>
~1j3{ltIJ11'
eH\C 1e0
Q)
~%-
cy --
--------
4 /'- 0.4 Cl
IN'.. '\. ........- /\J.. .::- '::::: >oc'" CO
~%~
P \ \ without filter ~ ..-- ........... ~ E
>11 \~ith
........- ........... ~~~
c
HA-l1 filter '\ ~
.~
0.1 ..-- --- .- ~ 10%_ u
u
o
> c
..e o
~ 0.4 "
~ 0.04
........-
(f)
\ :::::-.- 100% quantum efficiency \
\ \ is 0.80657A A/W \
\ \
-
for linT I I
\
0.1 0.01
400 600 800 1000 1200 400 600 800 1000 1200
FIGURE 5 FIGURE 6
TEXAS -I.!} 2-25

INSTRUMENTS
TC102·1
(In the circuit of Figure 3 with TA = 25°C, fRCK = 0.5 MHz, t exp = 10 ms, and all operating voltages at nominal
MODULATION TRANSFER FUNCTioN MODULATION TRANSFER FUNCTION

vs vs
SPATIAL FREQUENCY SPATIAL FREQUENCY
1.0 1.0
~ """'=:::: I I
c:
.2 ~ ~ithout filter
r c:
0
~ ~00to700nm
tJc: 0.8 ,
B 0.8
~
L1.
"'~ .:..
A=9~ 0
~c: 0.6 :--.... ~co 0.6
""
1! 1!
(")
>-
c:
0
.~
'3
0.4
"'" >-
,gco
'3
~ 0.4
(") "0
:. 2854 K Light "
:.
0 Monochromatic Light
c I
L1.
>-
0.2
I
L1.
0.2
:. >-
3 :.
Ql o a
CO o 0.2 0.4 0.6 0.8 1.0 a 0.2 0.4 0.6 0.8 1.0
(1) Normalized Spatial Frequency
Normalized Spatial Frequency
en
(1) a 7.9 15.8 23.6 31.5 39.4
I
a
I
7.9
I
15.8
I
23.6
I
31.5
I
39.4
:::s Spatial Frequency - cycles/mm
Spatial Frequency - cycles/mm
III
...
o FIGURE 7 fiGURE 8
--enc:
III
AVERAGE AND LOW·FREQUENCY
DARK SIGNAL
'0 vs vs
't:I EXPOSURE TIME
o
...... 10
"T1
c: 1/
:::s
...o·
(')
>
E
tJjJ71/
t'/ "';)<0 0(,
:::s I tf> ov
"V'J ~
III <0
§, ~~~v
171/~· <,
U:i ~ '"
-'"
0
~
0.1
1/1/ ~~
1/ 1/
[7./ 17
0.01
0.1 10 100
texp - Exposure Time - ms texp - Exposure Time - ms
fiGURE 9 fiGURE 10
2-26 TEXAS ~
INSTRUMENTS
TC102·1
MECHANICAL DATA
3.81 (0.150)
0.81 (0.032)R NOM
No.1 SENSOR ELEMENT -
8.10 (0.319)
7.75 (0.305)
U 234
5.82 (0.229)
5.56 (0.219)
5 II)
c:
o
'';;
o
c:
::J
,
7,49 (0.295) LL
7.24 (0.285)
2.97 (0.117) ....
~
I~ 1.19 (0.047) MAX 2.36 (0.093) o
c.
C.
L.J I ::J
-S EATINGPLANE------~~----_+·~
4.19 (0.165)
3.07 (0.121)
f
--
CJ)
I I)
~
o
3.81 (0.150) II)
3.05 (0.120) c:
. II _
--tr-- 0.25
0.30 (0.012)
(0.010) 1,42 (0.056)
1.12 (0.044)
II 2.54 (0.100) NOM
...-11-....
11
0.48 (0.019)
0•38 (0.015)
Q)
CJ)
Q)
0)
«l
E
NOTE: The distance between the top surface of the window and the surface of the sensor is nominally 0,89 (Q,03S). This is determined by observing the
vertical motion of a microscope focused first at one plane, then at the other. c
u
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICLALY IN INCHES u
TEXAS • 2-27
INSTRUMENTS
(')
(')
c
3
Q)
c.c
CD
en
CD
::l
!II
o...
--enc:
!II
"'0
"'0
o...
r+
"c:
::l
C')
:::!'.
o
::l
!II
2-28
TC103
02686, FE8RUARY 1983-REVISEO JULY 1989
• 2048 x 1 Sensor Element Organization TC103 . . . DUAL-IN-LINE PACKAGE

Technology
(TOP VIEW I
• High Quantum Efficiency V REF Vss

• Enhanced Blue Response OS Vss
1,0 Volt Peak-to-Peak
V DD
Vss
EOS
RCK

INT REF
NC
NC
NC
•
End-of-Scan Signal NC NC
• Internal Black and White References NC
NC
NC
NC
• Simple and Stable Operation
Vss Vss
• OPTIONAL FEATURE:
Internal Reference Voltage
TCK TCK UI
I:
WRCK XCK o
",p
CJ
I:
NC - No internal connection ::::J
LL
t:
o
0.
0.
description
-...
::::J
en
UI
o
UI
I:
The TCl 03, a 2048-element CCD line image sensor, functions in high-resolution image scanning applications such as Q)
C/)
facsimile and optical character recognition. The TCl 03 incorporates virtual-phase MaS technology, which provides
simplified operation and high reliability. The 2048 sensor elements provide 8 points-per-millimeter resolution across Q)
C)
256 millimeters.
CU
This device is supplied in a 24-pin dual-in-line ceramic side-braze package designed for insertion in mounting-hole rows
on l5,2-mm (0,600-inch) centers. The glass window may be cleaned by wiping with a cotton swab soaked in alcohol. -oE
• Caution, These devices have limited built-in gate protection. The leads should be shorted together or the device
u
J f<i, _~ placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Avoid
~ 'shorting either as or EOS to VSS during operation to prevent damage to the amplifiers,
u
virtual phase technology
This patented design results in simplified clocking circuits, reduced noise, and greater light sensitivity, The virtual
phase utilizes a junction-gate region at the substrate dc potential. This accomplishes the same gating and transport
function as a separate gate electrode requiring multiple layers and multiple process steps common in other device
designs. The resulting simplicity of process and ease of operation will increase performance and reliability for the user.
PRDDUCTIDI DATA documonts .ontain informotion Copyright @ 1989, Texas Instruments Incorporated
currant I. of publication data. Products confDnn to
.pecifications par the terms of Taxal Instruments
TEXAS .."
:::==i~ai~~~li ~!::i:~i:f lI~D:==:~~~ nat INSTRUMENTS
2-29
TCt03
2048 x t CCO LINEAR IMAGE SENSOR

TCK
C:::::::::::::~:JD~A~RBRK£C~U~R~R~E~N[TJB~U~F~F]E]R]C~C~DC:::::::::::::::t-------~------OVDD
INT
REF
os
VDD
VREF
EOS
("")
("") WRCK XCK TCK
I
Vss RCK
c SUBSTRATE AND
LIGHT SHIELD
W = WHITE REFERENCE INPUT DIODE
3 B = BLACK REFERENCE ELEMENT
I = ISOLATION ELEMENT
I»
cc N = 2048 SENSOR ELEMENTS
CD
CJ)
CD
::J PIN FUNCTIONAL DESCRIPTION
en
...
o PIN
--
en
CJ)
I:
NUMBER
1
2
SIGNATURE
VREF
OS
NAME
Reference Voltage
Output Signal
DESCRIPTION
Bias input for the output amplifiers and internal reference.

Video output from a cascaded source-follower MOS amplifier.
"0
"0 3 VDD Supply Voltage Output amplifier supply voltage.
o
... 4,10,15,23,
.... 24
VSS Substrate All voltages are referenced to the substrate.
"T1 5 INT REF Internal Reference Potential derived internally for operational reference voltage.
I: 6,7,8,9, 16
::J NC No internal connection.
(')
17,18,19,20
::t. 11,14 TCK Transport Clock Drives the ceo transport registers.
o 12 WRCK
White Reference Injects a controlled charge into the white reference ceo shift register
::J Clock elements to become white-reference and end-of-scan pulses.
en
13 XCK Transfer Clock Controls the transfer of charge packets from sensor elements to shift
registers. The interval between pulses of the transfer clock determines the
exposure time.
21 RCK Reset Clock Controls recharging of the charge-detection diodes in the output
amplifiers, and clocks the output shift registers where the odd and even
signals have been merged.
Indicates that all charge packets have been shifted out of the transport
22 EOS End-of-Scan Pulse
registers.
2-30 TEXAS •
INSTRUMENTS
TC103
The line of sensor elements lalso called photosites or pixels) consists of 2048 photo-sensitive areas, 12,7
micrometers 10.5 milliinches) square and approximately 12,7 micrometers from center to center. Image photons
create electron/hole pairs in the single-crystal silicon. The electrons are collected in the sensor elements, and the holes
are swept into the substrate. The amount of charge accumulated in each element is a linear function of the incident
light and the exposure time. The output signal charge will vary in an analog manner from a thermally generated noise
transfer gate
III
controls the exposure time for the sensor elements and permits charges to enter the end-of-scan IEOS) shift registers
III
CCO shift register to create the white reference signals. c:
o
shift registers '';;
t.)
There are two CCO transport registers, one on each side of the line of image sensor elements and outside of the c:
transfer gate. Alternate charge packets are transferred to the CCO transport shift registers and moved serially to the
::J
......
LL
two outer buffer CCO shift registers protect the signal charges in the inner transport CCO shift registers from
o
peripherally generated dark current noise.
c.
C.
::J
black and white reference elements C.fJ
Four additional sensor elements at each end of the sensor element array Ilabelled "8" in the block diagram) are covered
---...
III
by opaque metallization. They provide a black Ina illumination) signal reference that is delivered at each end of the
o
III
linear image output signal. Also included on the transport CCO shift register, at the opposite end from the amplifier, is c:
Q)
to external dc restoration and/or automatic exposure control circuitry. The white reference pulse amplitude is C.fJ
approximately 70% of the maximum output signal amplitude. Q)
C)
ctJ
E
the signal charge delivered. This potential is applied to the input gate of an N-channel MOS double-source-follower o
amplifier to produce an output signal 105). A reset transistor, driven by the reset clock IRCK), recharges the charge- u
detector-diode capacitance before the arrival of each new signal charge packet from the CCO shift registers. Reference u
voltage IVREF) is applied to the drain of the reset transistor and acts to bias the OS and EOS amplifiers. A current sink
is used as an on-chip load for the amplifier output, so no external current sink is needed. The output signal on pin 2 is a
internal reference voltage
An internal reference voltage liNT REF) is available on the chip to provide the VREF voltage. The required connections
appear in Figure 3. If the internal reference voltage is not used, an external voltage is connected directly to pin 1. Pin 5
is then left unconnected.
TEXAS • 2-31
INSTRUMENTS
TC103
resolution
The modulation transfer function decreases at longer wavelengths. (See Figures 7 and 8.) If optimum resolution is
clocks
II
n
The transfer clock (XCK) pulse controls the exposure time of the sensor elements. The minimum exposure time is
the time required to shift the entire contents of the transport registers to the output signal amplifier and equals 2081
The transport clock (TCK) transports the linear image, signal charge from the sensor element region to the output amplifier.
n
3 The white reference clock (WRCK) runs at the transfer clock frequency and generates the white reference and the
III end-ot-scan pulses. These pulses can be eliminated by connecting WRCK to VOO. Transients on WRCK going below
co zero volts will cause charge injection resulting in an increase in apparent dark signal.
CD
en
CD
Figure 3 presents a suggested circuit for generating the clock waveforms. The RCK clock generator runs continuously.
A binary divider halves the frequency to create TCK. After all signal charges have been transported to the output
::l
en amplifier, TCK continues to run to keep thermally generated charges from accumulating in the transport registers.
o...
-en
en
s::::
"0
"0
...
o
r+
"T1
s::::
::l
(')
r+
0"
::l
en
2-32 TEXAS . "

INSTRUMENlS
1C103
XCKJl"".. o - - - - - - - - - - - - - - - - - - EXPOSURE TIME - - - - - - - - - - - - - - - + - 1

. II
WRCKU
X BBBBIIII I 8 B B
as -""f""1~2
13 14 15 16 17 18 19 3 4 5 6 7 10
IP IP
2 IP
1 3
Output Signal (OS) pulse identification: I = isolation pixel. IP = Image pixel. B = Slack reference pixel. WR '" White reference pixel. X = empty pixel.
I/)
FIGURE 1-0PfRATING INPUT AND OUTPUT VOLTAGE WAVEFORMS c:
o
'';::;
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) (,)
(see Note 1) c:
::I
LL
Amplifier drain voltage (VDD1) ............................................... -0.3 V to 30 V
Transfer clock (XCK) voltage ........... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 25 V to 5 V
....
~
Transport clock (TCK) voltage ................................................. - 25 V to 5 V o

Reset clock (RCK) voltage .................................................... - 25 V to 5 V
c.
C.
White reference clock (WRCK) voltage ......................................... -0.3 V to 30 V ::I
en
Storage temperature
Operating free-air temperature ............................................... - 25°C to 70 °C
-25°C to 125°C
--
I /)
~
o
recommended operating conditions at T A = 25°C (see Note 1) I/)
c:
Q)
MIN NOM MAX UNIT
VOO Amplifier supply voltage 13 14 15 V en
VIH(X) Transfer clock high-level input voltage 3 4 5 V Q)
Transfer clock low-level input voltage -15t -14 13 V C)
VIL(X)
VIH(T) Transport clock high-level input voltage 3 4 5 V
ca
VIL(T) Transport clock low-level input voltage 15t 14 13 V E
VIH(R)
VIL(R)
Reset clock low-level input voltage
3
-15t
4
-14 -13
5 V
V
o
(J
VIH(WR) White reference clock high-level input voltage 13 14 15 V (J
fReK Reset clock frequency (output data rate) 10 MHz
tThe algebraic convention, where the most negative limit is designated as minimum, is used in this data sheet for clock voltage levels only.
NOTE 1: Voltage values are with respect to VSS.
TEXAS • 2-33
INSTRUMENlS
1C103
electrical characteristics at 25 DC free-air temperature'

PARAMETER MIN TYP MAX UNIT
Average 0.5 10 mV
Nonuniformity relative to mV
1.0 20
Sensitivity 2 3.5 5 V/(pJ/cm 2 )
Peak-to-peak 50 100
Output amplitude
Adjacent pixels from mV
variation (PRNU) ~ 10
Peak-ta-peak noise 1 mV
Equivalent exposure § of peak-ta-peak noise 0.35 nJ/cm 2
Saturation exposure § 350 nJ/cm 2
Saturation output amplitude 700 1000 1400 mV
Dynamic range relative to peak-ta-peak noise t 500:1 1000:1
Charge transfer efficip-ncy 0.99999
(") White reference amplitude 500 700 mV
(") End-of-scan amplitude 300 500 mV
c Output offset (de) voltage
Output impedance
7
1
V
kO
3Q) Transfer gate
Transport gate
150
500
Resistance to V 55 kO
CQ
Reset gate 500
CD
Amplifier reference voltage. VREF 7 V
en
CD
Transfer gate 250
:;, Capacitance to V 55 Transport gate 600 pF
(I) Reset gate 16
o... Amplifier supply current 8 12 rnA
--en
(I)
r:::
't:l
Total power dissipation
tOynamic range"" saturation output amplitude/standard·deviation peak-to-peak noise.

:j:Measured at 700 mV output amplitude with an f/2.8 lens.
110 mW
§Exposure "" intensity x time

't:l
o 'Test conditions afe fRCK "" 0.5 MHz, t exp "" 10 ms, tungsten light Source operating at color temperature of 2854 K with 2.0-mm-thick Fish,Schutman
HA-11 IR-absorbing filter, and all operating voltages at nominal recommended values using the internal reference voltage.
~
"T1
r:::
:;,
(")
r+
O·
:;,
(II
2-34 TEXAS . "

INSTRUMENTS
1C103
timing requirements
MIN NOM MAX UNITS

tTHXH 0 50 n.
edge to the transfer clock rising edge.
tTHWL 0 50 n.
to the white reference clock falling edge.
tTHRH 0 n.
edge to the reset clock rising edge.
tw(RH) 40 n.
clock.
tnxL 50 ns
edge to the transfer clock falling edge.
II
tnwH 0 50 ns
to the white reference clock rising edge.
tXLTH to the rising edge of the next transport clock 50 n.
pulse.
Ul
I:
tr rise time (all clocks) 15 ns o
tf fall time (all clocks) 5 ns ',j:
(,)
I:
:::I
-..I t--trHXH LL
XCK~
I Ir----------------~
\ ' -_ _ _ _ _ _ __
...o
+'"
c.
I4-trLXL---t Co
I I ~tXLTH :::I
.....
WRCK- - - - -II - : \
I
",-trHWL
1
.
I
I
I
I
;(
II
I
I
I
I
-...
en
Ul
o
I I I I Ul
I I4---t trLWH I I:
TCK-l: " fr-------,\\--__ Q)

en
Q)
tTHRH---t ~ O'l
I ...-.t tw(RHl ctS
RCK
I E
c
u
os u
FIGURE 2-0EVICE TIMING REQUIREMENTS
TEXAS . " 2-35

INSTRUMENTS
N
W
0>
SUO!lOun:::l lJoddns/sJosuas a6ewl a:::>:::> II
N-t
=n
.j:Io-
SN74LS626 1»=
+5Ve VCD W
x
n
n
DEVICE
c
UNDER TEST
VDD
,...
Z
m
VDD
1112) TLD369 ~
:11:1
Vcc t
8U,
~ i~
~ 'IN'> IRCK VREFI , %I C)
l> m
82<1 s:m en
":xl 'IN'> IXCK INT
REF -I m
m 2
en
z %I
s:m CI
:11:1
~ l>
en
;o~ c:
~~
~.. , IWRCK %I
m
Vcc* s:
m
~~
2
-I
Vss
VEE;
39£1 Z
."
r-
TLD369 TCK o%I
Vec*
I 39<1
s:
I ~
I
O.l.:.lF
VEE*
as EOS o
2
o.0 TEST POINTS
~VCC and VEE are the voltages that will produce the desired values of VIH and VIL, respectively, at the ACK, XCK, and TCK inputs.
FIGURE 3-DRIVER CIRCUIT FOR TESTING IMAGE SENSOR

TC103
C IL_:--'
o ..J
E..J
F ---,r----------------------------------------------
•
texp Trigger I
I
TCK
-----.JI
XCK -----.JI
RCK
I
I
I
n
WRCK ---, I

....
~
o
Co
TYPICAL CHARACTERISTICS Co
lin the circuit of Figure 3 with TA = 25 °C, fRCK

mended values, unless otherwise noted)
SENSITIV ITY
= 0.5 MHz, t exp = 10 ms, and all operating voltages at nominal recom-
RESPONSIVITY
-::::s
en
! f)
~
o
!f)
vs vs c::
Q)
WAVELENGTH OF INCIDENT LIGHT WAVELENGTH OF INCIDENT LIGHT
10 en
c'/ 'OOo/~
r----I-.o
.
~O%== Q)
4 ./ "-
- ""\. 0.4
'--- Quantuf1' _eH\Cle
....- /U. :.;...-- -- n

_
~%~
C)
RJ
E
---- ----- ---

IN- ;>" ;:o.c"
;p ;::...--" ~%-
P \ \~ithout filter \.
>11 ~ ,..., ~
==-]%-
c()
~
\With
HA·ll filter '\ .~
I
.. 0.1
..- ~ 10%_
()
-- -
.;; '
c:
'~
o \
'§ a.
0.4 \ ~ 0.04 \
'"
(J)
\ ::::::.... 100% quantum efficiency \
\ \ is 0.8065n A/W \
-
\ \ fOTn~r \
0.1 0.01 I I
400 600 800 1000 1200 400 600 800 1000 1200
FIGURE 5 FIGURE 6
TEXAS . " 2-37

INSTRUMENTS
TC103
(In the circuit of Figure 3 with TA = 25 ·C. fRCK = 0.5 MHz. texp = 10 ms. and all operating voltages at nominal recom-
mended values. unless otherwise noted)
MODULATION TRANSFER FUNCTION
vs
vs
c
0
1.0
---.~ SPATIAL FREQUENCY
I
without filter c:
SPATIAL FREQUENCY
1.0 ...-.....= - , . - - - - , , . - - - - , - - - - , - - - ,
'tic 0.8
............ '."c:,
0
'"
::J
0.8
u.. ::J
u..
~
..
II)
0.6 r--.. ~c:
II
c 0.6
.::
c "- <0
.::c:
0:g0 0
:; 0.4 ~ 0.4
C")
C")
""C
0
2854 K Light "
"0
0 Monochromatic Light
:i: :2:
c u.. 0.2
u.. 0.2
~
~
3I).) :i: :2:
(Q o 0
CD a 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
en I
I I I I
CD o I
::::l 7.9 15.8 23.6 31.5 39.4 a 7.9 15.8 23.6 31.5 39.4
UI Spatial Frequency - cycles/mm Spatial Frequency - cycles/mm
o
...
--enc:
UI
"0
FIGURE 7
AVERAGE AND LOW FREQUENCY

DARK SIGNAL
FIGURE 8

"0 vs vs
......o 10
EXPOSURE TIME
oR.
EXPOSURE TIME
100r---.----r----,-~--.---_,
"c:
::::l
(') VV ~
I
.,
80~--~----~--_74_----+_--~
"0
:t.
o > ~~0Vv >~
::J
::::l
UI
E
I 1'>00
,,'b ~
9 ~':> oV
0
E-
::J 60r--~r--_4~-_+--~~-~
"iii
cCl
iii
" fi90
/V",,~~"
""C
~
-t<0 /V ,,'b
a
-
<0
0.1 Ul
0
0
'"
Cl
!!l
V V
/ /
.,c
.,~
0.01
VV /
10 lOa
"-
2 4 8 10
0.1
FIGURE 9 FIGURE 10
2-38 TEXAS . "

INSTRUMENTS
TC103
MECHANICAL DATA
1:: ::1
r """"'' ".
34,9011,374)
7,6210.300) 34,19 (1,346)
7,37 (0.290)
n ''''''''
0,81 10,032) R
NOM
j
No.1 SENSOR ELEMENT 1 2 3 4 5 6 7 8 9 1011 12
I 4,62 (0.182)
j. 4,37 (0,172)
en
C
B
o
'';::
o
~~:~~ :~:~~~l c
=s
I 15,19 (0.598)
14,78(0.582)
4,1910.165)
3,07(0121)l r-1,19 100471 MAX
2,9710.117)
2,36(0093)
,
......o
LL
c.
~ =u= ~I--SEATINGPLANE~~-'--' c.
T--:r .rL
_ =s
en
--.l~ 1- ----.J/.__
0,30 (0,012)
0,2510.010) 381 (0 150).-J
0,48(0019)
0,38 (0 015)
--...
en
o
3:0510'120) 2,5410 100) NOM en
3,45 (0,136)
c
Q)
3,15 (0,124) en
Q)
0)
ALL DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES. ca
NOTE 1: The drst:3nce between the top surface of the window and the surface of the sensor IS nominally 0,89 (0.035). This is determined E
by obserVing the vertical motion of a microscope focused first at one plane. then at the other.
o
()
()
TEXAS • 2-39
INSTRUMENTS
("')
("')
c
3
Q)
co
CD
en
CD
::J
VI
o...
-
VI
en
I:
"0
"0
...o...
"
I:
::J
...o·
(")
::J
VI
2-40
TC103-1
02686. DECEMBER 1983-REVISED JULY 1989
• 2048 x 1 Sensor Element Organization TC103 . DUAL-IN-LiNE PACKAGE

ITOPVIEWI
Technology
V REF Vss
OS Vss
• Enhanced Blue Response V DD EOS
• Output Signal Approximately 1.0 Volt vss RCK
Peak-to-Peak
INT REF NC
• Dynamic Range Relative to NC NC
NC NC
• End-of-Scan Signal NC NC
• Internal Black and White References NC NC
• Simple and Stable Operation vss Vss
TCK TCK (I)

• OPTIONAL FEATURE:
Internal Reference Voltage WRCK XCK t:
o
• Same as TC103 Except for "White +"'
(.)
Reference Amplitude" and "End-of-Scan NC - No internal connection t:
Amplitude" Specifications ::J.
u..
description +"'
~
o
The TC 103-1 , a 2048-element CCO line image sensor, functions in high-resolution image scanning applications such c.
as facsimile and optical character recognition. The TC103-1 incorporates virtual-phase MOS technology, which provides C.
simplified operation and high reliability. The 2048 sensor elements provide a 8-points-per-inch resolution across 256 ::J
millimeters.
This device is supplied in a 24-pin dual-in-line ceramic side-braze package designed for insertion in mounting-hole rows
--
CJ)
( I)
~
o
on 1 5,2-mm 10,600-inchl centers. The glass window may be cleaned by wiping with a cotton swab soaked in alcohol. (I)
~ Caution. These devices have limited built-in gate protection. The leads should be shorted together or the device
t:
Q)
J 1<1>. ~ placed in conductive foam during storage or handling to prevent electrostatic damage to the MaS gates. Avoid CJ)
~ shorting either as or EOS to VSS during operation to prevent damage to the amplifiers. Q)
C)
virtual phase technology m
This patented design results in simplified clocking circuits, reduced noise, and greater light sensitivity. The virtual
E
phase utilizes a junction-gate region at the substrate dc potential. This accomplishes the same gating and transport 0
function as a separate gate electrode requiring multiple layers and multiple process steps common in other device U
designs. The resulting simplicity of process and ease of operation will increase performance and reliability for the user. U
PRODUCTION DATA documonts contain informotion Copyright @ 1989, Texas Instruments Incorporated
~
curraot as of publication data. Predacts conform to
specifications pef the terms of Texas Instruments TEXAS 2-41
:':~:=i~.i~~~1i ~:~:~ti:; :'~D::::::~::S~ not INSTRUMENlS
TC103·1

TCK
C:::::::::::::~:JD~A~R[K~C~U~R~R~E~N[TJB~U~F1F!EBRJC~C~DC:::::::::::::::r-------~------OVDD
INT
REF
os
VDO
•
VREF
EOS + DARK CURRENT BUFFER CCD EOS
(")
(") WRCK XCK TCK
I
Vss RCK
o SUBSTRATE AND
LIGHT SHIELD
W = WHITE REFERENCE INPUT DIODE
3Q) B = BLACK REFERENCE ELEMENT
I = ISOLATION ELEMENT
co N = 2048SENSOR ELEMENTS
CD
en
CD
::l PIN FUNCTIONAL DESCRIPTION
C/I
o
"'" PIN
--en
C/I
I:
"C
NUMBER
1
2
SIGNATURE
VREF
OS
NAME
Reference Voltage
Output Signal
DESCRIPTION

Video output fro,m a cascaded source-follower MOS amplifier.
"C 3 VOO Supply Voltage Output amplifier supply voltage.
o 4, 10, 15,23,
"'"
'* 24
5 INT REF Internal Reference Potential derived internally for operational reference voltage.
6,7,8,9, 16
NC No internal connection.
17, 18, 19, 20
11,14 TCK Transport Clock Drives the ceo transport registers.
12 WRCK
White Reference Injects a controlled charge into the white reference ceo shift register
Clock elements to become white-reference and end-ot-scan pulses.
13 XCK Transfer Clock Controls the transfer of charge packets from sensor elements to shift
registers. The interval between pulses of the transfer clock determines the
exposure time.
21 RCK Reset Clock Controls recharging of the charge-detection diodes in the output
amplifiers. and clocks the output shift registers where the odd and even
signals have been merged.
registers.
2·42 TEXAS . "

INSTRUMENTs
TC103·1

The line of sensor elements lalso called photosites or pixels) consists of 2048 photo-sensitive areas, 12,7
micrometers 10.5 milliinches) square and approximately 12,7 micrometers from center to center. Image photons
transfer gate
transfer gate voltage goes low, the charge is transferred into the CCD transport shift registers. The transfer gate also
controls the exposure time for the sensor elements and permits charges to enter the end-of-scan lEaS) shift registers
CCD shift register to create the white reference signals.
en
s:::::
o
shift registers +-'
(.)
There are two CCD transport registers, one on each side of the line of image sensor elements and outside of the s:::::
::J
transfer gate. Alternate charge packets are transferred to the CCD transport shift registers and moved serially to the LL
paths provide for alternate delivery of charge packets to re-establish the original sequence of the linear image data. The ...o
+-'
two outer buffer CCD shift registers protect the signal charges in the inner transport CCD shift registers from c.
::J
en
Four additional sensor elements at each end of the sensor element array lIabelied "8" in the block diagram) are covered
--...
en
o
by opaque metallization. They provide a black Ina illumination) signal reference that is delivered at each end of the en
linear image output signal. Also included on the transport CCD shift register, at the opposite end from the amplifier, is s:::::
Q)
an input diode that provides two white reference pulses in the oytput signal. The reference pulses are useful as inputs
en
Q)
C)
output signal amplifier CO
amplifier to produce an output signal 105), A reset transistor, driven by the reset clock IRCK), recharges the charge- oC,.)
detector-diode capacitance before the arrival of each new signal charge packet from the eeo shift registers. Reference
voltage IVREF) is applied to the drain of the reset transistor and acts to bias the as and EOS amplifiers. A current sink C,.)

TEXAS . " 2-43

INSTRUMENTS
TC103·1
resolution
clocks
II
(")
The transfer clock (XCK) pulse controls the exposure time of the sensor elements. The minimum exposure time is
the time required to shift the entire contents of the transport registers to the output signal amplifier and equals 2081
The transport clock (TCK) transports the linear image signal charge from the sensor element region to the output amplifier.
(")
o The reset clock (RCK) operates at twice the transport clock frequency so as to recombine the signal charge in the
3
Q)
The white reference clock (WRCK) runs at the transfer clock frequency and generates the white reference and the
co end-of-scan pulses. These pulses can be eliminated by connecting WRCK to VOO. Transients on WRCK going below
(1) zero volts will cause charge injection resulting in an increase in apparent dark signal.
(J) Figure 3 presents a suggested circuit for generating the clock waveforms. The RCK clock generator runs continuously.
(1)
::l A binary divider halves the frequency to create TCK. After all signal charges have been transported to the output
CII amplifier, TCK continues to run to keep thermally generated charges from accumulating in the transport registers.
o
..,
-CII
( J)
s::::
'0
'0
..,o
r+
."
s::::
::l
(")
r+
o·
::l
CII
2-44 TEXAS •
INSTRUMENTS
TC103·1
2048 x 1 CCo LINEAR IMAGE SENSOR
xcx nl-..o------------------ EXPOSURE TIME - - - - - - - - - - - -_ _ _ +-1

-1 I II
WRCKU
X B8BBIIII BBasXX
OS~~nnn 3 4 !) 6 1 8 9 10
-~t!pGd4
1 2 3
Output Signal (051 pulse identification: I "" isolation pixel. IP == Image pixel. B = Black reference pixel. WR = White reference pixel, X = empty pixel.
FIGURE 1 -OPfRATING INPUT AND OUTPUT VOLTAGE WAVEFORMS
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
(see Note 1)
Amplifier drain voltage (VDD1) ............................................... -0.3 V to 30 V ......

Transfer clock (XCK) voltage .................................................. - 25 V to 5 V o
Transport clock (TCK) voltage ................................................. - 25 V to 5 V 0.
0.
Reset clock (RCK) voltage .................................................... - 25 V to 5 V ;,
White reference clock (WRCK) voltage ......................................... -0.3 V to 30 V
Storage temperature ...................................................... - 25°C to 125°C
Operating free-air temperature ............................................... - 25°C to 70 °C
-...
CJ)
I /)
o
I/)
c:
CI)
recommended operating conditions at T A 25°C (see Note 1)
CJ)
MIN NOM MAX UNIT CI)
VOO Amplifier supply voltage 13 14 15 V C)
VIH(X) Transfer clock high-level input voltage 4 5 V CO
3
VIL(X) Transfer clock low-level input voltage -15t -14 -13 V E
Transport clock high-level input voltage V
VIH(T)
Transport clock low-level input voltage
3
15t
4
14
5
13 V o
VI LIT)
u
VIH(RI
VILIR)
Reset clock low-level input voltage
3
15t
4
14
5
13
V
V
u
VIL(WR) White reference clock low~level input voltage 6 7 8 V
iRCK Reset clock frequency (output data rate) 10 MHz
NOTE 1: Voltage values ate with respect to VSS.
TEXAS ~ 2-45
INSTRUMENTS
TC103-1
electrical characteristics at 25°C free-air temperature'

Average 0.5 10 mV
1.0 20
a~erage of adjacent pixels
Sensitivity 2 3.5 5 VII~J/cm2)
Output amplitude
I Peak-to· peak 50 100
variation IPRNU) t 10
Peak-to-peak noise 1 mV
nJ/cm 2
•
Equivalent exposure § of peak-ta-peak noise 0.35
Saturation exposure § 350 nJ/cm 2
Dynamic range relative to peak-ta-peak noise t 500:1 1000:1
Charge transfer efficiency 0.99999
(") White reference amplitude 500 mV
(") End-af-scan amplitude 300 mV
c Output offset Idc) voltage 7 V
Output impedance 1 kll
3Q) I Transfer gate 150
Resistance to VSS Transport gate 500 kll
CO
(1) I Reset gate 500
en
(1)
Amplifier reference voltage, VREF
I Transfer gate 250
7 V
~ Capacitance to VSS LTransport gate 600 pF

en I Reset gate 16
o
... Amplifier supply current 8 12 mA
--enc:
en
-c
tOynamic range = saturation output amplitude/standard deviation peak-ta-peak noise.

:t:Measured at 700 mV output amplitude with an f/2.8 lens.
110 mW
"C §Exposure = intensity x time

o 1Test conditions are fRCK = 0.5 MHz, t exp = 10 ms, tungsten light source operating at color temperature of 2854 K with 2.0-mm-thick Fish-Schurman
;:. HA-l1 IR-absorbing filter, and all operating voltages at nominal recommended values using the internal reference voltage.
"T1
s:::
~
(')
:!'.
o
~
en
2-46 TEXAS •
INSTRUMENTS
TC103-1
timing requirements
MIN NOM MAX UNITS
tTHXH 0 50 ns
tTHWL 0 50 ns
tTHRH 0 ns
tw(RH) 40 ns
clock.
tnxL 50 ns
1m
tnwH 0 50 ns
tXLTH to the rising edge of the next transport clock 50 ns
pulse. til
t, rise time (all clocks) 15 ns
I:
0
tf fall time (all clocks) 5 ns -,;;
(.)
I:
:l
--II u..
XCK----»
j4-trHXH
I~________________ ~
\\-_________
......o
I4-trLXL~
c.
I I ~tXLTH
C.
..... t--trHWL I I :l
WRCK- - - :I ,1\ I
I
j I
I --...
CJ)
I . I II I
I /)
o
I
I
I I
I4--1trLWH
I
I
en
I:
t~-----'\
Q)
TCKJ, \ CJ)
I ~---------- Q)
trHRH~ ~ C)
I ~twlRHl CO
RCK I
E
Cl
()
os ()
TEXAS . " 2-47

INSTRUMENTS
SUO!lOun::l lJoddns/sJosuas a6ewJ a:»:»
N
J,.
CD N-I
CI C":I
+5 v. SN74LS626
veo
"A) , SN7474 -'='"-
CD CI
X':"
w
DEVICE
C":I
UNDER TEST
C":I
C
VOO
I VOO
I
r-
iii
11/21 TL0369
m
:I>
Vee· ::z:I
I
8U2
~ReK VREF
~ i:I>
:lD
VEE· l> C)
Vee· 82.11: 3: m
xeK !NT m en
2! REFI -I m
!!l m
:lD Z
~ en
i:iZ 3: C)
m ::z:I
l'lrtJ l>
~-l en
g:;:c~ C
:lD
i:lC:~
WRCK
m
~~ Vee· 3:
m
~I"'I
~Z ~ Z
-I
§U14" Vss
Z
"
~
r-
I
VEE·
TL0369
Vee· R 3911
TeK
-n
0
:lD
3:
I
l>
-I
I OS EOS 5
I VEE· z
I +5V
o.0 TEST POINTS
tVCC and Vee are the voltages that will produce the desired values of VIH and VIL. respectively, at the RCK, XCK, and TCK inputs.

TC103-1
C -'L~C--....J
D ..J
e..J
F ---v~-----------------------------------------------
texp Trigger I
I
TCK
-----.JI
XCK
-----.JI
RCK
I
I
I
n III
c:
o
WRCK ----., I
....
(.)
c:
~
u..
.......
o
0.
TYPICAL CHARACTERISTICS 0.
~
en
lin the circuit of Figure 3 with T A = 25°C, fRCK = 0.5 MHz, t exp
mended values, unless otherwise notedl
SENSITIV ITY
= 10 ms, and all operating voltages at nominal recom-
RESPONSIVITY
--o...
I II
III
vs vs c:
WAVELENGTH OF INCIDENT LIGHT WAVELENGTH OF INCIDENT LIGHT Q)
10 en
70% Q)
50% OJ
/ ...... CO
4
_w- "'\. E
? \ \ without filter
o
>11 \With
'\ u
u
i 0.1§~~~IIE
HA·11 filter
c
.s;
:E
~
c: \
en'" 0.4 ~ 0.04 I---,""""~-+--+-+--+---H.--If----l
\ 100% quantum efficiency +---4-+-----j
\ \ is 0.80657X A/W
0.1 400 600 800

\
1000
Incident Wavelength - nm
1200
0.01 L-----l_--L_-'-_-'--------l_--L_-'-----l
400 600 800 1000 1200
Incident Wavelength - nm
FIGURE 5 FIGURE 6
TEXAS ~ 2-49
INSTRUMENTS
TC103-1
(In the circuit of Figure 3 with T A = 25 °C, fRCK = 0.5 MHz, texp = 10 ms, and all operating voltages at nominal recom-

vs vs
SPATIAL FREQUENCY
---
SPATIAL FREQUENCY
1.0 1.0
I ~ I T
c
0 ~ r---.:ithout filter c
"!
~ ~00to700nm
-fl 0.8 u 0.8
c
A=9~ ~
c
"
~ r--... "
u.. u..
~
•
~c
''"c" 0.6 0.6
(")
.=c
.,
.0
'"
:;
0.4 """"
.='"c
c:l
'"::> 0.4
"'"
"0 "0
(") 0
::i! :;;:
0
0.2 u.. 0.2
3 f-
:;;:
ell
CC
(I) o 0
o 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
en
(I)
Normalized Spatial Frequency Normal izer! Spatial Frequency
I I I I I I
:::::I o 7.9 15.8 23.6 31.5 39.4 0 7.9 15.8 23.6 31.5 39.4
en Spati al Frequency -- cycles/mm
o Spatial Frequency - cycles/mm
--en
~
en FIGURE 7 FIGURE 8
AVERAGE AND LOW FREQUENCY OUTPUT SIGNAL VOLTAGE RELATIVE TO

c DARK SIGNAL SATURATED OUTPUT VOLTAGE
"0
"0 vs vs
o
~
EXPOSURE TIME EXPOSURE TIME
.-+ 10 100
?f2.
g;,
/ / e 80
0
~c//
>
:;
>
E
I
'"con
/,?
,,'?:;~
,,'?:;
00
,.,~
%0
00
'),'0
0
e-::>
"0
60
~
iJj
//"
" ~
'0
~
40
-c / / ,,'?:; ~
0 0.1 (f)
'0
w
/ /
]3 20
c
VV
~
0.01
VV / 0..
0.1 10 100
t exp - Exposure Time - ms t exp - Exposure Time - ms
FIGURE 9 FIGURE 10
2-50 TEXAS . .
INSTRUMENTS
TC103·1
MECHANICAL DATA
± 1::
7,62 (0.300)
7,37 (0.290)
34,90(1.374)::1
34,19 (1.346)
H~n"m""""" .. "
,.':~". ~:::::::m }Ii- CL
B
4,62 (0.182)
r- 4,37 (0.172)
15,80(0.622) III
15,29 (0.602) c:
2,97 (0.117) o
.';:;
15,19 (0.598)
14,78 (0.582)
4,19 (0.165)
3,07 (0.121) l 11 1,19 (0.047) M A X !
2,36 (0.093) (.)
c:
::l
~ ~-----SEATINGPLANE~~ t
LL
=a=
----..II-- I' ---.II--
0,30 (0.012)
0,25 (0.010) 3,81 (0.150) ~
3,05 (0.120)
r-=r -fL 2,54 (0.100) NOM
0,48 (0.019)
0,38 (0.015)
.......
o
c.
C.
::l
3,45 (0.136)
3,15 (0.124) --...
CI)
I II
o
NOTE: The distance between the top surface of the window and the surface of the sensor is nominally 0.89 lO,035J. This is determined by observing the III
vertical motion of a microscope focused first at one plane. then at the other.
c:
Q)
CI)
ALL DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
Q)
0')
CO
E
o(.)
(.)
TEXAS . " 2-51

INSTRUMENTS
("')
("')
o
3
OJ
<C
CD
CJ)
CD
:::l
CIl
o..,
CIl
----
CJ)
s::::
'0
"C
o
..,
....
"T1
s::::
:::l
....
(")
O·
:::l
CIl
2-52
TC104
02687, FE8RUARY 1983-REVISEO JULY 1989
• 3456 x 1 Sensor Element Organization TC104 ..• DUAL·IN·LINE PACKAGE

(TOP VIEW)

Technology
• Enhanced Blue Response VREF 24 Vss

Vss
0.6 Volt Peak-to-Peak
OS
Voo 22 EOS
Vss 21 RCK
Peak-to-Peak Noise Typica"y 1000:1
INT REF NC
NC NC
NC NC

I/)
NC NC
• Simple and Stable Operation c::
Vss Vss o
• OPTIONAL FEATURE: '';::
TCK TCK (.)
Internal Reference Voltage
WRCK 12 XCK
c::
:::l
......o
LL
c.
C.
NC - No internal connection.
:::l
description
The TC104, a 3456-element CCD line image sensor, functions in high-resolution image scanning.applications such
as document reading and optical character recognition. The TC 104 incorporates virtual-phase MOS technology, which
--...
C/)
I /)
o
I/)
provides simplified operation and high reliability. The 3456 sensor elements provide 400 points-per-inch resolution c::
(I)
across 8.5 inches. C/)
This device is supplied in a 24-pin dual-in-line ceramic side-braze package designed for insertion in mounting-hole rows (I)
on 15.2-mm (0,600-inch) centers. The glass window may be cleaned by wiping with a cotton swab soaked in alcohol.
en
CO
Caution. These devices have limited built-in gate protection. The leads should be shorted together or the device E
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Avoid
c
shorting either OS or EOS to VSS during operation to prevent damage to the amplifiers. u
u
phase utilizes a junction-gate region at the substrate dc potential. This accomplishes the same gating and"l:ransport
designs. The resulting simplicity of process and ease of operation will increase performance and reliability for the user,
PRDDUCTIDI DATA documanta contain information Copyright @ 1989, Texas Instruments Incorporated
currant IS of publication data. Products conform to
specifications per the tarms of Tnas I....ru ....nts
standard warranty. Production prDeasing dOBS not TEXAS • 2-5.3
Dacalsarily includa _.tina of all parametars. INSTRUMENTS
TC104

TCK
C:============~===D~A~R~KJC~U~R~R~E~N~TIlB~U~F!F!E]RJC~C~D~==============:J--------~------~VDD
INT
REF
os
VDD
VREF
II
("')
("') WRCK XCK TCK VSS RCK
EOS
o SUBSTRATE AND
LIGHT SHIELD
W ~ WHITE REFERENCE INPUT DIODE
3
Q)
B ~ BLACK REFERENCE ELEMENT
~ ISOLATION ELEMENT
c.c N ~ 3456 SENSOR ELEMENTS
CD
en
CD
~
C/I
o... PIN FUNCTIONAL DESCRIPTION
--en
C/I
s::
PIN
NUMBER
1
SIGNATURE
VREF
NAME
Reference Voltage
DESCRIPTION

"C 2 OS Output Signal Video output from a cascaded source-follower MOS ampl1fier.
"C
o
... 3 VDD Supply Voltage Output amplifier supply voltage.
.... 4, 10, 15, 23,

24
"s::
~
5
6,7,8,9,16
INT REF Internal Reference Potential derived internally for operational reference voltage.
....
C')
17,18,19,20
o· 11,14 TCK Transport Clock Drives the CCD transport registers.
~ White Reference Injects a controlled charge into the white reference CCO shift register
C/I 12 WRCK
Clock elements to become white-reference and end-of-scan pulses.
Controls the transfer of charge packets from sensor elements to shift
13 XCK Transfer Clock registers. The interval between pulses of the transfer clock determines the
exposure time.
Controls recharging of the charge-detection diodes in the output
21 RCK Reset Clock amplifiers, and clocks the output shift registers where the odd and even
Signals have been merged.
registers.
2-54 TEXAS •
INSTRUMENTS
TCt04
3456 x t CCO LINEAR IMAGE SENSOR
The line of sensor elements (also called photosites or pixels) consists of 3456 photo-sensitive areas, 10,7
micrometers (0.42 milliinches) square and approximately 10,7 micrometers from center to center. Image photons
transfer gate
CCO shift register to create the white reference signals. Vl
c:::
o
shift registers '';;
(.)
There are two CCO transport registers, one on each side of the line of image sensor elements and outside of the c:::
transfer gate. Alternate charge packets are transferred to the CCO transport shift registers and moved serially to the :::l
LL
.......
two outer buffer CCO shift registers protect the signal charges in the inner transport CCO shift registers from o
Q.
peripherally generated dark current noise. Q.
:::l
en
by opaque metallization. They provide a black (no illumination) signal reference that is delivered at each end of the
--...
Vl
o
Vl
linear image output signal. Also included on the transport CCO shift register, at the opposite end from the amplifier, is c:::
an input diode that provides two white reference pulses in the output signal. The reference pulses are useful as inputs Q)
to external dc restoration and/or automatic exposure control circuitry. The white reference pulse amplitude is en
approximately 100% of the maximum output signal amplitude. Q)
C)
CO
E
the signal charge delivered. This potential is applied to the input gate of an N-channel MOS double-source-follower c
amplifier to produce an output signal (OS). A reset transistor, driven by the reset clock (RCK), recharges the charge- u
detector-diode capacitance before the arrival of each new signal charge packet from the CCO shift registers. Reference u
voltage (VREF) is applied to the drain of the reset transistor and acts to bias the OS and EOS amplifiers. A current sink
-TEXAS . " 2-55

INSTRUMENTS
1C104
3456 X 1 CCO LINEAR IMAGE SENSOR
resolution
clocks
II
C')
time required to shift the entire contents of the transport registers to the output signal amplifier and equals 3489
The transport clock (TCK) transports the linear image signal charge from the sensor element region to the output
C') amplifier.
o The reset clock (RCK) operates at twice the transport clock frequency so as to recombine the signal charge in the
3Q) original sequence and present the charge to the output amplifier. The data rate is equal to the reset clock frequency.
CQ
The white reference clock (WRCK) runs at the transfer clock frequency and generates the white reference and the end-
CD
of-scan pulses. These pulses can be eliminated by connecting WRCK to VOO. Transients on WRCK going below zero
rn volts will cause charge injection resulting in an increase in apparent dark signal.
CD
::l Figure 3 presents a suggested circuit for generating the clock waveforms. The RCK clock generator runs continuously.
en
o
... A binary divider halves the frequency to create TCK. After all signal charges have been transported to the output
amplifier, TCK continues to run to keep thermally generated charges from accumulating in the transport registers.
--
en
rn
I:
"C
"C
o...
r+
"I:::l
(")
r+
o·
::l
en
2-56 TEXAS ."

INSTRUMENlS
1C104
x c K J l f o.. o - - - - - - - - - - - - - - - - - - EXPOSURE TIME ---------------...,Rf-o-tL-

. II
WRCKU
X 68BBIIII
OS~~nnn
-l!!J~l!d4
1 2 3
Output Signal (OS) pulse identification: I = Isolation pixel. IP = Image pixel. B = Black reference pixel, WR = White reference pixel, X = empty pixel. (I)
c:
o
FIGURE 1-0PERATING INPUT AND OUTPUT VOLTAGE WAVEFORMS '';::
(J
c:
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) :;,
(see Note 11 LL.
.......
Amplifier drain voltage (VOO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to 30 V o
Transfer clock (XCK) voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V to 5 V C.
Q.
Transport clock (TCK) voltage ................................................ . -25 V to 5 V :;,
en
Reset clock (RCK) voltage ................................................... . -25 V to 5 V
White reference clock (WRCK) voltage ........................................ . -0.3 V to 30 V
Storage temperature -25°C to 125°C
Operating free-air temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 25°C to 70 °C
--...
( I)
o
(I)

c:
Q)
en
Q)
recommended operating conditions at T A 25°C (see Note 1)
~
MIN NOM MAX UNIT CO
VDD Amplifier supply voltage 13 14 15 V E
Transfer clock high-level input voltage 3 4 5 V
VIH(X)
Transfer clock low-level input voltage 15t 14 13 V o
VIL(X)
Transport clock high-level input voltage 3 4 5 V u
VIH(T)
VIL(T) Transport clock low-level input voltage -15t -14 -13 V
u
VIH(R) Reset clock high-level input voltage 3 4 5 V
VIL(R) Reset clock low-level input voltage -15t -14 -13 V
NOTE 1: Voltage values are with respect to VSS'
TEXAS ~ 2-57
INSTRUMENTS
POST OFFICE BOX 655303 • DAllAS. TEXAS 75265
TC104
electrical characteristics at 25°C free-air temperature 1

Average 0.5 10 mV
4 20
Sensitivity 1.4 2 5 V/(~J/em21
Output amplitude
I Peak-to-peak 30 60
variation (PRNUl:j: 10
III
("')
("')
Peak-ta-peak noise
!=quivalent exposure § of peak-ta-peak noise
Saturation exposure §
Saturation output amplitude
Dynamic range relative to peak-ta-peak noise t
400
500:1
0.6
0.3
300
600
1000:1
1200
mV
nJ/em 2
nJ/em 2
mV
o Charge transfer efficiency

White reference amplitude 400
0.99999
600 mV
3
Q)
End-at-scan amplitude
Output offset (del voltage
200 350
6
mV
V
co Output impedance 1 kO
CD Transfer gate 150
(J) Resistance to VSS Transport gate 700 kO
CD Reset gate 700
::::s
VI Amplifier reference voltage, VREF 7 V
o... 1 Transfer gate 400
--
VI
(J)
c:
"C
Capacitance to Vss
Amplifier supply current

1 Transport gate
I Reset gate
900
16
8 12
pF
mA
Total power dissipation 112 mW
"C
o... tDynamic range = saturation output amplitude/standard deviation peak-to-peak noise .
.-+ t:Measured at 400 mV output amplitude with an f/2.B lens .
§Exposure = intensity x time
"T1 ~Test conditions are fRCK "" 0.5 MHz, t exp = 10 ms, tungsten light source operating at color temperature of 2854 K with 2.0-mm-thick Fish-Schurman
c: HA-11 IR-absorbing filter, and all operating voltages at nominal recommended values using the internal reference voltage.
::::s
(")
.-+
o·
::::s
VI
2-58 TEXAS -I/}

INSTRUMENTS
TC104
timing requirements
MIN NOM MAX UNITS

tTHXH 0 50 ns
tTHWL 0 50 ns
tTHRH 0 ns
tw(RH) 40 ns
clock.
tTLXL 50 ns
fI
tTLWH 0 50 ns
VI
c:
-
pulse.
tr Rise time (all clocks)
Fall time (all clocks)
15
5
ns
ns
.2
tf
( .)
c:
-
::::I
LL
~
o
0.
"4 I-tTHXH 0.
XCK it
1
~\..
j4-tTLXL--t -
_______________________________ ::::I
en
--
VI
~
I I 1'1-..----11...1tXLTH o
~I
~
I
j4-tTHWL I
I
~
/.~----~I
I
------------------ VI
c:
CIJ
WRCK
I --------II~
'-. :I :I en
I I CIJ
I 14--+1 tTLWH I Cl
CO
TCKJ, \ ,.----\ E
~----------
I
~
o
tTHRH - - t
l~tw(RHI u
I u
RCK
TEXAS .", 2-59

INSTRUMENTS
i'J
~
SUO!lOun::l lJoddns/sJosuas a6ewl 000 II
w .....
~n
+5V
SN74lS626
VCO
cn=
en ....
X
~
n
DEVICE
n
CI
UNDER TEST
VDD
,...
Z
t~~I
m
):10
(1/2l TLD369
:a
VCC*
82n
"0
l> i):10
RCK VREF ::0 C')
l> m
s:
o.1 ).JF m en
INT~
82n
2i
~
XCK
REF -I m
o m 2
::0 en
~z s:m =
:a
~~ l>
~fO~ en
c
tl c:~
: ~
/! (TI VCC+
WRCK
I
::0
m
s:m
"or
~ Z Z
~ Ul4r
~
-I
Z
~
~
"'"
~
r-
I
I
VEE*
TLD369
VCc*
B39n
TCK
"TI
0
::0
s:
l>
-I
0.1 >iF
VJ as EOS 0
I VEE* Z
I +5V
o .0 TEST POINTS
tVee and VEE are the voltages that will produce the desired values of VIH and VIL. respectively, at the RCK, XCK. and TCK inputs.

TC104
B ---'
I
L
I
C '"l...~I~....
D ..J
E..J
F
taxp Trigger
----v~---------------------------------------------------
I
II
I
TCK ---1
I
XCK ---1
I (/)
RCK I:
WRCK - - - ;' - -_ _ _ _ _ _ _ _...J

...
o
U
I:
::l
FIGURE 4 - WAVEFORMS IN DRIVER CIRCUIT ......o

LL
C.
TYPICAL CHARACTERISTICS Q.
::l
lin the circuit of Figure 3 with TA = 25°C, fRCK
SENSITIVITY
= 0.5 MHz, t exp = 10 ms, and all operating voltages at nominal recom-
RESPONSIVITY
-...
en
( /)
o
(/)
vs vs I:
WAVELENGTH OF INCIDENT LIGHT CU
10
WAVELENGTH OF INCIDENT LIGHT
en
70% CU
50%
C'I
CO
4
E
~ -" '-
1\ without filter c
>11 ~ 1\ with
HA-11 filter
\
(,)
(,)
r-......
t:-
..,
.:;;
.;;;
cCI)
(J)
0.4
\
\ for X inJ.lm.
0.1
400 600
1800 1000
\
1200
0.01 '----'-_-L_...I..-_'----'-_-L_...I..----J
400 600 800 1000 1200
FIGURE 5 FIGURE 6
TEXAS . " 2-61

INSTRUMENTS
TC104
(In the circuit of Figure 3 with TA = 25 °C, fRCK = 0.5 MHz, t exp = 10 ms, and all operating voltages at nominal recom-
vs vs
SPATIAL FREQUENCY
c: c:
0 0
'Ec: 't 0.8
c:
...
::l
~
::l
U.
•
~c: ~c: 0.6
~
.
t=
c: c:
0 0
.~ .~
0.4
(") :; :;
'C 'C
(") 0
2854 K Light
0
::E
Monochromatic Light
::E
C
...
t-
I
0.2 u. 0.2
t-
3
Q)
::E ::E
CO 0 0
CD 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
en
CD
I I I I I
Normal ized Spatial Frequency
I I I I
:l 0 9.3 18.7 28.0 37.4 46.7 0 9.3 18.7 28.0 37.4 46.7
(fl Spatial Frequency - cycles/mm
Spatial Frequency - cycles/mm
...
0
--en
(fl
s::
"C
FIGURE 7

DARK SIGNAL
FIGURE 8

"C vs vs
......
0
10
EXPOSURE TIME
?f.
I
EXPOSURE TIME
100r----,r----,-----,-----.----~
"s::
:l ~
OJ
0>
80
...
C')
0', > .fo~v / /

// "0
>~
::l
:l E q .,,<0 oV S-
(fl
..
I
c:
0>
en /
"
/1"
"
q {'
~V
q<0
oV 0
::l
'C
2J
~
60
" q
..
-t:
0 0.1
/ / ,,\» ~
en
....0
40
~
'"0> 20
/ c:
/ t' e
OJ
V / V "-
OJ
0.01
0.1 10 100 2 4 6 8 10
texp - Exposure Time - ms texp - Exposure Time - ms
FIGURE 9 FIGURE 10
2-62 TEXAS •
INSTRUMENTS
TC104
r-::
MECHANICAL DATA
45,67(1,798)::1
7,62 (0.300) 44,75 (1,762)
7,37 (0 2901
---t- r- _2:~~2~~2~1~: ~ ~6 ~5~4~3 __ ,
0,81 NOM
(0.032) R
~I'I I
L _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ JI
J
No.1 SENSOR ELEMENT 1 2 3 4 5 6 789101112
•
1
4- 4,50 (0.177)
4,24 (0.167)
8
II)
c:::
15,80(0,622)
15,29 (0.6021
2,97 (0.117)
...
.2
(J
c:::
15,19 (0.598)
14,78 (0.5821
4,19 (0.165)
3,07 (0.121) l -, r-l,19 (0.047) MAX +'
236 (0093)
::l
......
LL
1r-r=a=--lI~----SEATINGPLANE~~-,.+-- o
c.
--II--- g:: :g:~~~! -11- ~:: !g:g~~: fl I-L C.
381 (0 150)
::l
3:05 (0: 1- ..j 1201 I 2,54 (0.100) NOM
--...
U)
I I)
8,79 (0.346)
8,48 (0.334)
o
II)
c:::
Q)
ALL DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES. U)
Q)
C')
NOTE 1: The distance between the top surface of the window and the surface of the sensor is nominally 0,89 (O.035}. This is determined by observing the CO
vertical motion of a microscope focused first at one plane. then at the other.
E
o
()
()
TEXAS • 2-63
INSTRUMENTS
II
C')
C')
c
3
s:»
co
CD
en
CD
::s
en
o
...
--enc::
en
"0
"0
...o...
"::sc::
...o·
(')
::s
en
2-64
TC104-1
02687. DECEM8ER 1983-REVISED JULY 1989
• 3465 x 1 Sensor Element Organization TC104 ..• DUAL-iN-LiNE PACKAGE

(TOP ViEW)
Technology

VREF VSS
• Output Signal Approximately 0.6 Volt os Vss
Peak-to-Peak
VDD 3 EOS
VSS 4 RCK
INT REF NC
•
NC 6 NC
• Internal Black and White References
NC NC
• Simple and Stable Operation NC 8 NC
• OPTIONAL FEATURE: NC 9 NC CIl

Internal Reference Voltage c:
VSS 10 VSS o
• Same as TC104 Except for "White '';:'
TCK TCK (,)
Reference Amplitude" and "End-of-Scan.
WRCK 12 XCK
c:
Amplitude" Specifications :::l
...o
LL.
-
0.
0.
description
NC - No internal connection.
The TC 104-1 , a 3456-element CCD line image sensor, functions in high-resolution image scanning applications such
--
:::l
(J)
CIl
o
CIl
as document reading and optical character recognition. The TCl 04-1 incorporates virtual-phase MaS technology, c:
Q)
which provides simplified operation and high reliability. The 3456 sensor elements provide 400 points-per-inch resolution
(J)
across 8.5 inches.
Q)
This device is supplied in a 24-pin dual-in-line ceramic side-braze package designed for insertion in mounting-hole rows C)
on 15.2-mm (0,600-inch) centers. The glass window may be cleaned by wiping with a cotton swab soaked in alcohol. C'tI
Caution. These devices have limited built-in gate protection. The leads should be shorted together or the device
E
placed in conductive form during storage or handling to prevent electrostatic damage to the MOS gates. Avoid
shorting either as
or EOS to VSS during operation to prevent damage to the amplifiers.
c
()
()
phase utilizes a junction-gate region at the substrate dc potential. This accomplishes the same gating and transport
designs. The resulting simplicity of process and ease of operation will increase performance and reliability for the user.
PRODUCTION DATA documents contain information Copyright @ 1989, Texas Instruments Incorporated
~
currant as of publication data. Praduets conform to
specifications par the tarms of TaxiS Instruments TEXAS 2-65
=~~:~~i;ar'::'~~e =i:~ti~n :I~D::::::~:'~ not INSTRUMENTS
TC104·1

TCK
C:::::::::::::~::D~A~RRK£C~U~R~R~E~N~TJB~U~F~F]E]R~C~C~D~::::::::::::::}--------r------OVDD
INT
REF
os
VDO
VREF
II
(") I
EOS
(") WRCK TCK VSS RCK
C SUBSTRATE AND
LIGHT SHIELO
w ~ WHITE REFERENCE INPUT DIODE
3Q) 8 ~ 8LACK REFERENCE ELEMENT
~ ISOLATION ELEMENT
CQ
CD N ~ 3456 SENSOR ELEMENTS
en
CD PIN FUNCTIONAL DESCRIPTION
:l
en
...
o PIN
NUMBER
SIGNATURE NAME DESCRIPTION
--en
en
r::
'0
1
2
3
VREF
OS
VDD
Reference Voltage
Output Signal
Supply Voltage
Video output from a cascaded source-follower MOS amplifier.
Output amplilier supply voltage.
'0 4.10.15.23,
...
o
r+
24
5
VSS
INT REF
Substrate
Internal Reference
All voltages are referenced to the substrate.
Potential derived internally for operational reference voltage.

"T1 6,7,8,9,16
r:: 17,18,19,20
:l
(") 11,14 TCK Transport Clock Drives the CGO transport registers.
r+ White Reference Injects a controlled charge into the white reference CGO shift register
O· 12 WRCK
Clock elements to become white-reference and end-of-scan pulses.
:l
en Controls the transfer of charge packets from sensor elements to shift
13 XCK Transfer Clock registers. The interval between pulses of the transfer clock determines the
exposure time.
Controls recharging of the charge~detection diodes in the output
21 RCK Reset Clock amplifiers, and clocks the output shift registers where the odd and even
Signals have been merged.
22 EOS End-ot-Scan Pulse
registers.
2·66 TEXAS ~
INSTRUMENTS
TC104·1
The line of sensor elements (also called photosites or pixels) consists of 3456 photo-sensitive areas, 10,7
micrometers (0.42 milliinches) square and approximately 10,7 micrometers from center to center. Image photons
transfer gate
transfer gate voltage goes low, the charge is transferred into the CCD transport shift registers. The transfer gate also
to create the end-of-scan waveform. In addition, the transfer gate permits entry of charge packets to the transport I/)
CCD shift register to create the white reference signals. I:
o
shift registers
'';::::
(.)
There are two CCD transport registers, one on each side of the line of image sensor elements and outside of the I:
::J
transfer gate. Alternate charge packets are transferred to the CCD transport shift registers and moved serially to the LL.
....
~
o
two outer buffer CCD shift registers protect the signal charges in the inner transport CCD shift registers from c.
::J
en
--o
I /)
~
by opaque metallization. They provide a black (no illumination) signal reference that is delivered at each end of the I/)
linear image output signal. Also included on the transport CCD shift register, at the opposite end from the amplifier, is I:
Q)
en
Q)

en
CO
amplifier to produce an output signal (aS). A reset transistor, driven by the reset clock (RCK), recharges the charge- o
detector-diode capacitance before the arrival of each new signa) charge packet from the CCD shift registers. Reference
u
voltage (VREF) is applied to the drain of the reset transistor and acts to bias the as and EOS amplifiers. A current sink
u
TEXAS. 2-67
INSTRUMENTS
TC104·1
resolution
•
clocks
time required to shift the entire contents of the transport registers to the output signal amplifier and equals 3489
n The transport clock (TCK) transports the linear image signal charge from the sensor element region to the output
n amplifier.
3
QJ
c.c The white reference clock (WRCK) runs at the transfer clock frequency and generates the white reference and the end-
CD
of-scan pulses. These pulses can be eliminated by connecting WRCK to VOO. Transients on WRCK going below zero
CJ) volts will cause charge injection resulting in an increase in apparent dark signal.
CD
::J Figure 3 presents a suggested circuit for generating the clock waveforms. The RCK clock generator runs continuously.
en
...o A binary divider halves the frequency to create TCK. After all signal charges have been transported to the output
amplifier, TCK continues to run to keep thermally generated charges from accumulating in the transport registers.
--
en
CJ)
r:::
'0
'0
.......o
"r:::
::J
....
C')
o·
::J
en
2-68 TEXAS . "

INSTRUMENTS
TC104-1
XCKJl"".........- - - - - - - - - - - - - - - - - EXPOSURE TIME ---------------+-1

. II
WRCKU
aS x BBBBIIII
-'"'T't~2
1314 15 16 17 18 19
IP IP
2 IP
1 3
Output Signal !OS) pulse identification: I "" Isolation pixel, IP = Image pixel, B = Black reference pixel. WR = White reference pixeL X = empty pixel. (/)
r::::
o
FIGURE 1-0PERATING INPUT AND OUTPUT VOLTAGE WAVEFORMS "';:::'
(.)
r::::
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) ::J
(see Note 1) LL
.......
Amplifier drain voltage (VDD) -0.3Vto30V o
Transfer clock (XCK) voltage .......... .. .. .. .. .. .. . .. ... . ..... ... ... ... . .. - 25 V to 5 V 0.
0.
Transport clock (TCK) voltage ......................................... - 25 V to 5 V ::J
Reset clock (RCK) voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 25 V to 5 V
White reference clock (WRCK) voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3 V to 30 V
Storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 25°C to 125°C
--...
CJ)
( /)
o
Operating free-air temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (/)
r::::
NOTE 1: Voltage values are with respect to Vss. Q)
CJ)
Q)
recommended operating conditions at T A 25°C (see Note 1) 0)
MIN NOM MAX UNIT
CO
VOO Amplifier supply voltage 13 14 15 V E
VIHIX)
VILIX)
Transfer clock high~level input voltage
Transfer clock low-level input voltage
3
-151 -14
4 5
-13 V
V
o
()
VI HIT) Transport clock high-level input voltage 3 4 5 V
()
VILIT) Transport clock low-level input voltage -151 -14 -13 V
VIHIR) Reset clock high-level input voltage 3 4 5 V
VILIR) Reset clock low-level input voltage -151 -14 -13 V
VIHIWR) White reference alock high-level input voltage 13 14 15 V
VILIWR) White reference clock low-level input voltage 6 7 8 V
IRCK Reset clock frequency (output data rate) 8 MHz
NOTE 1: Voltage values are with respect to VSS'
TEXAS ~ 2-69
INSTRUMENTS
TC104-1
electrical characteristics at 25°C free-air temperature,

Average 0.5 10 mV
4 20
Sensitivity 1.4 2 5 VI(,.Jlcm 2 )
Peak·to-peak 30 60
Output amplitude
variation (PRNU); 10
Peak-to-peak noise 0.6 mV
Equivalent exposure § of peak-to-peak noise 0.3 nJlcm 2
Saturation exposure § 300 nJlcm 2
Dynamic range relative to peak-to-peak noise t 500:1 1000:1
(") White reference amplitude 400 mV
(") End-of-scan amplitude 200 mV
c Output offset (de) voltage 6 V
Output impedance 1 kll
3
Q)
Transfer gate 150
Resistance to V S5 I Transport gate 700 kll
CC Reset gate 700
CD
Amplifier reference voltage, VREF 7 V
en
CD
Transfer gate 400
~ Capacitance to VSS Transport gate 900 pF
VI Reset gate 16
...o
VI
8 12 mA
mW
112
en
s:::: tOynamic range = saturation output amplltude!standard deviation peak-to-peak noise.
"'C +Measured at 400 mV output amplitude with an f/2.8 lens.
"'C §Exposure = intensity x time
o 'Test conditions are tRCK = 0.5 MHz, t exp = 10 ms, tungsten light source operating at color temperature of 2854 K with 2.0-mm-thick Fish-Schurman
;; HA-l1 lA-absorbing filter, and all operating voltages at nominal recommended values using the internal reference voltage.
"T1
s::
~
(")
r+
O·
~
VI
2-70 TEXAS ~
INSTRUMENTS
TC104·1
timing requirements
MIN NOM MAX UNITS

tTHXH 0 50 ns
tTHWL 0 50 ns
tTHRH 0 ns
tw(RH) 40 ns
clock.
tTLXL 50 ns
•
tTLWH 0 50 ns
(/j
pulse.
I:
t, Rise time fall clocks) 15 ns
0
tf Fall time (all clocks) 5 ns '';;
"
-.! t--tTHXH .......
lj(
I
XCK ~~ ___________________________________ oQ,

Q,
::::J
I en
--...
: j4-tTLXL-+! .. 'XL TH
~ ~tTHWL : r---~~~:::~~I----------------------------- ( /j
1 I ;( I
WRCK- - - -
I :\ ~ I o
I .
~ ______~I-J II I (/j
I I I I
I:
Q)
~tTLWH
I I
en
TCKJ,
I
" fr---------,\ ~----------
Q)
en
CO
'THRH--t
E
RCK o
u
u
os
FIGURE 2-0EVICE TIMING REOUIREMENTS
TEXAS . " 2·71

INSTRUMENTS
N
..:..,
N
SUO!IOun~ IJoddns/sJosuas afiewl 0:>:> II W-I
""'C")
c.n ...
+5V.
SN74LS626
veo
A) , SN7474
en =
X':" "'"
C")
DEVICE C")
UNDER TEST C
VDD
!::
VDD
z
11/21 TLD369 m
:to
VCC+ ::a
"'D
:>0
82<1
-NIl IRCK VREFI ,
~
:%I
i:
:to
~ c:J
82~ s:m m
')0 V.O, IXCK fNT
-I
en
REF
m m
:%I
Z
en
z s:
m
Q
::a
~ ~
C/I
iOr;;1 C
:%I
C~
............,., , IWRCK
m
~C/l
200n.
VCC+ s:m
z 2
-I
ui.ct VEE+
TLD369
39D
TCK
VSS
:2
."
o
r- Vcc+ :%I
I 39n s:~
-I
I 0.1,._ F
OS EOS
(5
I VEE! 2
0· 0 TEST POINTS
tVee and VEE are the voltages that will produce the desired values of VIH and VIL' respectively, at the RCK, XCK, and TCK inputs.
FIGURE 3-0RIVER CIRCUIT FOR TESTING IMAGE SENSOR

TC104·1
B -.l L
C -'L._'--~
D ..J
E..J
F---V~-----------------------------------------------
texp Trigger I
I
-----.J
fI
TCK
I
XCK -----.J
I
RCK en
c:
o
WRCK - - - ,L..-_ _ _ _ _-J
.....
(.)
c:
:l
FIGURE 4 - WAVEFORMS IN DRIVER CIRCUIT u..
.....
...
TYPICAL CHARACTERISTICS o
a.
(In the circuit of Figure 3 with TA = 25°C, fRCK = 0.5 MHz, t exp = 10 ms, and all operating voltages at nominal recom-
a.
:l
SENSITIVITY
vs
RESPONSIV ITY
vs
--...
CJ)
en
o
WAVELENGTH OF INCIDENT LIGHT WAVELENGTH OF INCIDENT LIGHT en
10 - ....:- ._- - -
c:
. c~ \ 000/ 0 - - - f--"70%=
.
Q)
~-:
I--- C\ua(ltU <"
--
eH\Oe\l
- 34%-
CJ)
Q)
~ p-
-
4 0.4
~ 1rJ.. :::: '""(' en
~~ "'"-1'\ -- ~ ...- ~ ~
0%~ CO
--
without filter E
~ r~r-
>11 -l-~
~ ...- ~ :-- ~
-:!F with \ V ~
\HA-ll filter Cl
~ 0.1 10%~
u
~
.;;
.;:;
C
'"
(fJ
0.4
\
>
c
o
0.
~ 0.04
r-
~ -
100% quantum efficiency
\
\
U
-~ \
is 0.80657A AIW
- - -_.._--- -
r-
0.1 - -
400
,___ . 1.-
600 800 1000
\
1200
0.01
400
fOTnr
600 800
I I
1000
~
1200
FIGURE 5 FIGURE 6
TEXAS • 2·73
INSTRUMENTS
POST OfFICE BOX 655303 • DALLAS, TEXAS 75265
TC104·1
(In the circuit ot Figure 3 with T A = 25°C. tRCK = 0.5 MHz. texp = 10 ms. and all operating voltages at nominal recom-
mended values. unless otherwise noted)
vs
vs
SPATIAL FREQUENCY
SPATIAL FREQUENCY
1.0 r-~=---,-----.---,----,
.: .:
on0 0
.;:;
.: 0.8
0
.:
::l :0
u. u.
~
.l!! -t;
II ..
("')
~
0
.;:;
"3
"C
~
.:
~ 0.6
.=.:
0
.;:;
"3'"
"0
0.4
("') 0
:E
c I
0.2
:E
u. u.. 0.2
f-
3
II)
:E
f-
:;;:
CC 0 0
CD 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
en
CD
I
I I I I I
::l
en o 9.3 18.7 28.0 37.4 46.7 0 9.3 18.7 28.0 37.4 46.7
Spatial Frequency - cycles/mm Spatial Frequency - cycles/mm
o
..,.
-
en
e!:n
'0
FIGURE 7

DARK SIGNAL
FIGURE 8

't:I vs vs
o..,. EXPOSURE TIME EXPOSURE TIME
r+ 10 100.---,---.--.r---,----,
."
!:
*"..I
::l '"
(")
r+
v V 3
"0
80
o· > ~vVv
>
~
::l
::l
en E ¥ov ~<o e- 60
I ~ ¥ ~ ov 0
::l
V~ ~v
"iii "C
.: V ~ ,. <0 j!l
'" ~ ~
.
Cij ¥
-t::.. VlI ~'?-/ a 40
0 0.1
-....
rJ)
'" 20
V V
/ E.. Ee = 2.5 iJ.W/cm2
VV V .
~
0-
0.01 0
0.1 10 100 0 2 4 6 8 10
FIGURE 9 FIGURE 10
2-74 TEXAS •
INSTRUMENTS
TCt04·t
3456 x t CCO LINEAR IMAGE S~NSOR
MECHANICAL DATA
7,62(0300)
I
7,37 (0290)
r-:: ::~~ g:~:~l::l
242322212019181716151413
~~
0,81 10.032) R
NOM . ./,IJi, ~I
L ----- - -- -- --- - - -
'il-
I
_J
CL
J
1
No.1 SENSOR ELEMENT 1-.14,2503104 1:7)6 7 8 9 1011 12
4.24 10.167)
9
III
c:
15.8010.622)
15.29 (0.602) ...
.2
CJ
2,97 10.117) c:
15.19 (0.598)
14.78 (0.582)
4.19 (0.165)
3.07 (0.121) l --, r-1.19 10.047) MAX +' .
2 36 (0093) ::l
...
U.
...
Ir-----1~--SEATINGPLANE~~
U
,
o
c.
---il-- g:~~ !~:~~~: fl1- ..jI-l -11- ~:~: l~:~~~: --...
381 (0150)
3:05 (0: 120) I 2.54 (0.100) NOM
C.
::l
CJ)
I II
8,79 (0.346) o
8,48 (0,334) III
c:
Q)
NOTE: The distance between the top surface of the window and the surface of the sensor is nominally 0,89 (0.035). This is determined by observing the
CJ)
vertical motion of a microscope focused first at one plane, then at the other.
Q)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES C'l
ca
E
o
u
u
TEXAS • 2-75
INSTRUMENTS
II
(")
(")
o
3
Q)
c.c
CD
en
CD
~
rn
o
...
--cen
rn
't:I
't:I
o
...
.....
2-76
1C106-1
2592 )( 1 CCO LINEAR IMAGE SENSOR
02992. SEPTEMBER 1986-REVISEO JULY 1989
• 2592 x 1 Sensor Element Organization TC106-l ... DUAL·IN·LlNE PACKAGE

(TOP VIEW)
Technology
• High Quantum Efficiency VREF VSS

as VSS
Voo EOS
• Output Signal Approximately 0.6 Volt VSS RCK
Peak-to-Peak
INT REF NC
• Dynamic Range Relative to Peak-to-Peak
NC NC
Noise Typically 1000: 1
NC NC
• End-of-Scan Signal NC NC
• Simple and Stable Operation VSS VSS
• Optional Feature: TCK TCK fIl
Internal Reference Voltage WRCK XCK
c:
o
....
(.)
NC - No internal connection
c:
description ::l
LL
The TC106-1. a 2592-element CCD line image sensor. functions in high-resolution image scanning .......
applications such as document reading and optical character recognition. The TC 106-1 incorporates virtual- o
phase MOS technology. which provides simplified operation and high reliability. The 2592 sensor elements 0.
provide 300 points-per-inch resolution across 8.5 inches. 0.
::l
en
This device is supplied in a 24-pin dual-in-line ceramic side-braze package designed for insertion in mounting-
hole rows on 1 5.2-mm (0.600-inch) centers. The glass window may be cleaned by wiping with a cotton
swab soaked in alcohol.
--...
f Il
o
fIl
Caution. These devices have limited built-in gate protection. The leads should be shorted together c:
Q)
or the device placed in conductive form during storage or handling to prevent electrostatic damage
to the MOS gates. Avoid shorting either OS or EOS to VSS during operation to prevent damage to en
the amplifiers. Q)
O'l
ctI
E
This patented design results in simplified clocking circuits. reduced noise. and greater light sensitivity.
The virtual phase utilizes a junction-gate region at the substrate dc potential. This accomplishes the same c
(J
gating and transport function as a separate gate electrode requiring multiple layers and multiple process
(J
steps common in other device designs. The resulting simplicity of process and ease of operation will increase
performance and reliability for the user.
PRODucnOI DATA d.......1s •••t.in information Copyright © 1989. Texas Instruments Incorporated
.....nt •• of p.blication date. PnuIucts eanform to
spacificatio•• par ttuo tor'"' of T.... I.str....nt. TEXAS •
=i~·{:~:ra =::i:r :'i'=':A.~ not INSTRUMENTS
2-77
POST OFFICE BOX 655303 • DALlAS. TEXAS 76266
1C106·1

TCK
C:::::::::::::~::QD~AER!K1C~U~R~RliE~NBTJB~UllF~F1E]RQC~C~DC:::::::::::::::}--------r------OVDD
INT
REF
os
VDD
•
VREF
EOS
(")
(") I
Vss
c WRCK XCK TCK
SUBSTRATE AND
RCK
LIGHT SHIELD
3Q) W = WHITE REFERENCE INPUT DIODE
B BLACK REFERENCE ELEMENT
<C I ISOLATION ELEMENT
CI)
N 2592 SENSOR ELEMENTS
en
CI)
::s PIN FUNCTIONAL DESCRIPTION
en
...
o PIN
SIGNATURE NAME DESCRIPTION
--en
en
.§
NUMBER
1
2
3
VREF
OS
Reference Voltage
Output Signal
Supply Voltage
Bias input for the output amplifiers and internal reference
Video output from a cascaded source-follower MOS amplifier
Output amplifier supply voltage
VDD
'0 4,10,15,23,
o... 24
VSS Substrate All voltages are referenced to the substrate
r+
5 INT REF Internal Reference Potential derived internally for operational reference voltage
"::sc: 6,7, B, 9, 16
17, 1B, 19,20
NC No internal connection
(") 11,14 TCK Transport Clock Drives the CCO transport registers
r+
o· 12 WRCK
White Reference Injects a controlled charge into the white reference ceo shift register elements
::s Clock to become white-reference and end-of-scan pulses.
en 13 XCK Transfer Clock
Controls the transfer of charge packets from sensor elements to shift registers.
The interval between pulses of the transfer clock determines the exposure time.
Controls recharging of the charge-detection diodes in the output amplifiers, and
21 RCK Reset Clock clocks the output shift registers where the odd and even signals have been
merged.
22 EOS End-of-Scan Pulse Indicates that all charge packets have been shifted out of the transport registers.
2·78 TEXAS . "

INSTRUMENTS
TCtU6·t
2592 x t CCD LINEAR IMAGE SENSOR

The line of sensor elements (also called photosites or pixels) consists of 2592 photo-sensitive areas, 10.7
micrometers (0.42 milliinches) square and 10.7 micrometers from center to center. Image photons create
electron/hole pairs in the single-crystal silicon. The electrons are collected in the sensor elements, and
the holes are swept into the substrate. The amount of charge accumulated in each element is a linear
function of the incident light and the exposure time. The output signal charge will vary in an analog manner
from a thermally generated noise background at zero illumination to a maximum at saturation under bright
illumination.
transfer gate
This structure is adjacent to the line of image sensor elements. The charge packets accumulated in the
image sensor elements are transferred into the transfer gate storage well when the transfer gate voltage
goes high. When the transfer gate voltage goes low, the charge is transferred into the CCD transport shift
register. The transfer gate also controls the exposure time for the sensor elements and permits charges en
to enter the end-of-scan (EOS) shift registers to create the end-of-scan signal. In addition, the transfer t:
gate permits entry of charge packets to the transport CCD shift register to create the white reference signals .
...
o
(,)
shift registers c::
:::l
There are two CCD transport registers, one on each side of the line of image sensor elements and outside
of the transfer gate. Alternate charge packets are transferred to the CCD transport shift registers and moved
serially to the output amplifier. The phase relationship of the reset clock and the transport clock and the
...o...
LL
geometric layout of the paths provide for alternate delivery of charge packets to re-establish the original 0.
sequence of the linear image data. The two outer buffer CCD shift registers protect the signal charges 0.
in the inner transport CCD shift registers from peripherally generated dark current noise. :::l
en
black and white reference elements --...
en
o
Four additional sensor elements at each end of the sensor element array (labelled "8" in the block diagram) en
are covered by opaque metallization. They provide a black (no illumination) signal reference that is delivered t:
Q)
at each end of the linear image output signal. Also included on the transport CCD shift register, at the
opposite end from the amplifier, is an input diode that provides two white reference pulses in the output
en
Q)
signal. The reference pulses are useful as inputs to external dc restoration and/or automatic exposure control 0)
circuitry. CO
E
c
The charge packets are transported to a precharge diode whose potential changes linearly in response
u
to the amount of the signal charge delivered. This potential is applied to the input gate of an N-channel
MaS double-source-follower amplifier to produce an output signal (OSI. A reset transistor, driven by the
u
reset clock (RCK). recharges the charge-detector-diode capacitance before the arrival of each new signal
charge packet from the CCD shift registers. Reference voltage (VREF) is applied to the drain of the reset
transistor and acts to bias the as and EOS amplifiers. A current sink is used as an on-chip load for the
amplifier output, so no external current sink is needed. The output signal on pin 2 is a series of negative-
going pulses on a dc level.

An internal reference voltage (INT REF) is available on the chip to provide the VREF voltage. The required
connections appear in Figure 3. If the internal reference voltage is not used, an external voltage is connected
directly to pin 1. Pin 5 is then left unconnected.
TEXAS ~ 2-79
INSTRUMENTS
TC106-1
resolution
The modulation transfer function decreases at longer wavelengths. (See Figures 7 and 8.) If optimum
resolution is required with a light source that has a significant infrared component, then the designer must
use appropriate filters to restrict the optical pass band to shorter wavelengths.
The EOS amplifier is similar to the OS amplifier. XCK transfers charge from the input diode into the EOS
register where it is transported at the TCK clock frequency to the EOS amplifier. This EOS pulse is coincident
with the first of the two white reference pulses that pass through the odd and even transport CCDs,
respectively. The EOS output can be used to alert the external circuitry that the linear image data readout
has been completed.
clocks
The transfer clock (XCK) pulse controls the exposure time of the sensor elements. The minimum exposure
time is the time required to shift the entire contents of the transport registers to the output signal amplifier
Ci and equals 2625 multiplied by the RCK period. The maximum exposure time is determined by the tolerable
Ci level of dark signal.
o The transport clock (TCK) transports the linear image signal charge from the sensor element region to the
3
Q)
output amplifier.
CO The reset clock (RCK) operates at twice the transport clock frequency so as to recombine the signal charge
CD in the original sequence and present the charge to the output amplifier. The data rate is equal to the reset
en clock frequency.
CD The white reference clock (WRCK) runs at the transfer clock frequency and generates the white reference
:::l
(J) and the end-of-scan pulses. These pulses can be eliminated by connecting WRCK to VDD. Transients on
o... WRCK going below zero volts will cause charge injection resulting in an increase in apparent dark signal.
--cen
(J)
Figure 3 presents a suggested circuit for generating the clock waveforms. The RCK clock generator runs
continuously. A binary divider halves the frequency to create TCK. After all signal charges have been
transported to the output amplifier, TCK continues to run to keep thermally generated charges from
'0
'0 accumulating in the transport registers.
o...
.-+ The XCK and WRCK clock frequencies are submultiples of the TCK frequency. Figure 2 details the timing
relationships among the different clock pulses .
."
C
:::l
(")
::t-
O
:::l
(J)
2-80 TEXAS ~
INSTRUMENTS
TC106-1
X C K J l " ' . I - - - - - - - - - - - - - - - - - - EXPOSURE TIME ---------------+-1

1/
WRCKlJ
OS~~n
X BB8BIIII
_ nn n...Jl..J1.-"~~
1 2 3 4
-l!J~~Lt
, 2 3
Output Signal (aS) pulse identification: I ::::: Isolation pixel, IP ::::: Image pixel, B = Black reference pixel, WR ::::: White reference pixel, I/)
X ~ Empty pixel. c:
o
-.;:
FIGURE 1. OPERATING INPUT AND OUTPUT VOLTAGE WAVEFORMS
(,)
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) (see
c:
:::J
Note 1) LL
Amplifier drain voltage range (VOO) ................................... . -O.3Vto30V
Transfer clock (XCK) voltage range . -25Vto5V
Transport clock (TCK) voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25Vto5V
-
+-'
o
Q.
Q.
Reset clock (RCK) voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25Vto5V :::J
en
White reference clock (WRCK) voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range ........ .
Operating free-air temperature range
-O.3to30V
---
I /)
o
I/)
NOTE 1; Voltage values are with respect to VSS. c:
Q)
(.f)
recommended operating conditions at T A 25 DC (see Note 2)
Q)
MIN NOM MAX UNIT Cl
VOO Amplifier supply voltage 13 14 15 V CO
VIHIX) Transfer clock high-level input voltage 3 4 5 V E
-15 t
VIL(X) Transfer clock low-level input voltage -14 -13 V
o
VIH(T) Transport clock high-level input voltage 3 4 5 V
u
VIL(T) Transport clock low-level input voltage -15 t -14 -13 V u
V(H(R) Reset clock high-level input voltage 3 4 5 V
VILIR) Reset clock low-level input voltage -15 t -14 -13 V

NOTE 2: The algebraic convention, in which the more negative limit is designated as minimum, is used in this data sheet for clock voltage
levels only.
TEXAS . " 2-81

INSTRUMENTS
POST OFFICE BOX 655303 • DAl.LAS. TEXAS 75265
TC106-1
electrical characteristics at 25°C free-air temperature t

Average 0.5 10 mV
low-frequency component 0.5 5
Dark~signal amplitude
4 20
Sensitivity 1.4 2 5 V/(p.J/cm 2 }
Output amplitude
I Peak-to-peak 30 60
variation (PRNU)~ 10
Peak-ta-peak noise 0.6 mV
•
Equivalent exposure§ of peak-ta-peak noise 0.3 nJ/cm 2
Saturation exposure § 300 nJ/em 2
Dynamic range relative to peak-ta-peak noise 1 500:1 1000:1
("")
("") White reference amplitude 400 mV
o End-ot-scan amplitude
Output offset (de) voltage
200
6
mV
V
3Q) Output impedance

I Transfer gate
1
50
kll
CQ Resistance to VSS I Transport gate 250 kll

CD Reset gate 250
en
CD
Amplifier reference voltage, VREF 7 V
Transfer gate 400
:J
UI Capacitance to VSS Transport gate 900 pF
~ Reset gate 16
--enc:
UI
""0
8
112
12 mA
mW
t Test conditions are fRCK == 0.5 MHz, t exp = 10 ms, tungsten light source operating at color temperature of 2854 K with 2.0~mm~thick
""0 FiSh-Schurman HA-11 IR~absorbing filter, and all operating voltages at nominal recommended values using the internal reference voltage.
...
o
r+
::: Measured at 400 mV output amplitude with an f/2.8 lens.
§ Exposure = intensity x time
1 Dynamic Range = saturation output amplitude/standard deviation peak-to-peak noise .
.."
c:
:J
(')
r+
O·
:J
UI
2-82 TEXAS .."

INSTRUMENTS
TC106·1
timing requirements
MIN NOM MAX UNIT
tTHXH 0 50 ns
tTHWL 0 50 ns
tTHRH 0 ns
twlRH) Pulse duration of the high state for the reset clock 40 ns
tTLXL 50 ns
tTLWH 0 50 ns
Time delay from the transfer clock falling edge to
tXLTH 50 ns
the rising edge of the next transport clock pulse
t, Rise time (all clocks) 15 ns
(/)
tf Fall time lall clocks) 5 ns
s:::::
o
.+:;
-t I--tTHXH o
XCK it
I
~~ _________________________________ s:::::
::J
......o
LL
I ... tTLXL~
I 'I "'I"I--..,.~I tXLTH
WRCK[~' \1~~HWL 'I

1;(r-------~I---------------------------
I
I
C-
o.
----;I~ : : ::J
en
I
I
I
.....
I I
~tTLWH
I
I --...
( /)
TCKJ,
I
\ fr------,.\ ~----------
o
(/)
s:::::
Q)
tTHRH -+t ~
, I4-+t tw(RHI
en
Q)
I
RCK Ol
CO
E
os o
(,)
(,)
FIGURE 2. DEVICE TIMING REQUIREMENTS
TEXAS • 2-83
INSTRUMENTS
'"..,.cD
suor~oun:::l uoddns/sJoSUas a6eWI a~~ II N-I
U'I
CD-
n
Nc:::I
X':' =
n
DEVICE
n
UNDER TEST
CI
VOO !::
2
·t~~
m
(1/2) TlD369 >
:lei
VCC*
"'C
82!l » i
RCK VREF
;,J
» >
~
s:
m
m
INT~
IU.l,u~
2l
82!l
XCK -I en
m
'!1 REF m z
;,J
~- en
hlZ s:
m =
:lei
~(JJ
~-l
»
(I)
g:;:c~ c:
;,J
C~ m
8o~
I
WRCK
s:
m
~ITJ VCC*
·"r
Z
~Z -I
§Ul..t 2
B
"T1
~
TLD369 TCK
0
'"
~ ;,J
'"'" COUNTER
SN74LS193
VCc*
39!l s:»
(LSBI
-I
'1 0
0.1,uF
VEE*
OS EOS I Z
<3> ... CD TEST POINTS

t This counter chain counts transport clock periods to generate the exposure time interval. The data rate is twice the count rate.
*VCC and VEE are the voltages that will produce the desired values of VIH and VIL, respectively, at the RCK, XCK, and TCK inputs.
FIGURE 3, DRIVER CIRCUIT FOR TESTING IMAGE SENSOR

TC106·l
B ---.J, L
I
c"1 : I
o .J
E.J I
I
F ----v~-------------------------------------------------
t exp Trigger 1
I
XCK -.J
I
RCK ____ -+:,__~r--lL________~r__l~________~r__l~________~r__l~________~~ II)
c::
I o
WRCK ------,~.__________---J ....(.)
c::
FIGURE 4. WAVEFORMS IN DRIVER CIRCUIT ::l
U.
.......
o
TYPICAL CHARACTERISTICS 0.
0.
::l
(In the circuit of Figure 3 with TA = 25°C, fRCK = 0.5 MHz, t exp = 10 ms, and all operating voltages at
en
nominal recommended values, unless otherwise noted)
SENSITIVITY RESPONSIVITY
--...
I I)
o
II)
vs vs c::
WAVELENGTH OF INCIDENT LIGHT WAVELENGTH OF INCIDENT LIGHT Q)
10 (J)
Q)
Cl
4 CO
"r-., E
,,~ '-
1'\ without filter ~ o
~
1\ with
HA-11 filter
\
1'...
«
~
I
.:;
()
()
'iii
c
o
..,
Q.
II: 0.04 ~:::7"!-"=~--I---+-+-f--l'r-t---

\
\ for A in I'm.
0.1
400
1\ 1\ 0.01 L..--1_....L_..l-_L..--1_....L_..l----l
600 800 1000 1200 400 600 800 1000 1200
Incident Wavelength-nm Incident Wavelength-nm
FIGURE 5 FIGURE 6
TEXAS ~ 2-85
INSTRUMENTS
TC106·1
(In the circuit of Figure 3 with T A = 25°C, fRCK = 0.5 MHz, texp 10 ms, and all operating voltages at

vs vs
SPATIAL FREQUENCY SPATIAL FREQUENCY
1.0 "-,""",~------r---.---,------,
e e
.2
ti 'g",. 0.8 f---+---+-----'''-.c-l-'''''-~-+----I
...,.
e
...
III
n
~e
:!!
l-
..,"
e
,:!
~ 0.6
:!!
l-
e
f----+---f---+--+--""-...--l
n -3
"
.~ 0.4 f---+---+----I----+----I
c "C
'3
-g
3Q)
"
::i: 2854 K Light :;
Monochromatic Light
...I
l-
0.2 .L
I-
0.2 f----+---f---+--+---l
cc ::i: ::i:
CD
en
CD
0
0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0
::s Normalizad Spatial Frequency Normalized Spatial Frequency
.
C/l
0 0 9.3 18.7 28.0 37.4 46.7 o
I
9.3
I
18.7 28.0 37.4 46.7
--enc:
C/l Spatial Frequency-cycles!mm
FIGURE 7
Spatial Frequency - cycles!mm
FIGURE 8
'0
.
'0
0
....
"T1
c:
::s
....
(')
o·
::J
C/l
2-86 TEXAS ~
INSTRUMENTS
TC1D6·1
(In the circuit of Figure 3 with T A = 25°C, fRCK = 0.5 MHz, texp 10 ms, and all operating voltages at
AVERAGE AND LOW FREQUENCY OUTPUT SIGNAL VOLTAGE RELATIVE TO

DARK SIGNAL SATURATED OUTPUT VOLTAGE
vs vs
EXPOSURE TIME EXPOSURE TIME
10 # 100
.I
IV V o
'"
:!
~
>
11<'" oV
.; ~'" oV
/ s
Co
> ~\>: .; ",,'" oV S 60
E 0
I ~\>: , ,,'" oV~ "C CI)
iO
I: / / ~\>:~\>:.; .; '" ! c:
'" I!! o
iii
/ / ~~/ a 40 .';:::;
-.,
<II
""~ 0.1 UJ CJ
c:
0
::::l
/ '"
:!I:
......
LL
0.01
V
VV
V
/ ..
~
0..
o
Q.
0.1 10 100 2 4 6 8 10 Q.
texp-Exposure Time-ms texp-Exposure Time-ms ::::l
en
FIGURE 9 FIGURE 10
--...
CI)
o
CI)
c:
Q)
en
Q)
C)
co
E
c(.)
(.)
TEXAS ~ 2-87
INSTRUMENTS
TC106·1
MECHANICAL DATA
±1::
7,62 (0.300)
7,37 (0.290)
34,90(1,374)::1
34,19 (1.346)
M~H"~"" '''''''' "
0.81 (0.032) R
NOM
II No.1 SENSOR ELEMENT 1 2 3 4 5 6 7 8 9 1011 12
B r- 4,62 (0.182)
4,37 (0.172)
(') 15,80(0.622)
(') 15,29 (0.602)
c 2,97 (0.117)
3
III
15,19 (0.598)
14,78 (0.582)
4,19 (0.165)
3,07 (0.121) l 11 1 ,19 (0.047) MAX
2,36 (0.093)
L
<C
CD
~ ~'-----SEATINGPLANE~~...,t.----
en
CD
:::I
CIl
o
...
=u=
---11-- 0,30 (0.012)
I
0,25 (0.010)
~I+-- --r-=r
3,81 (0.150)....J
rL 0,48 (0.019)
0,38 (0.015)
-CIl
en
s::
"0
3,05 (0.120)
3,45 (0.136)
3,15 (0.124)
.... 2,54 (0.100) NOM
NOTE: The distance between the top surface of the window and the surface of the sensor is nominally 0.89 (0.035). This is determined
"0 by observing the vertical motion of a microscope focused first at one plane, then at the other.
.......
o
"T1
s::
:::I
....o
0"
:::I
CIl
2·88 TEXAS •
INSTRUMENTS
TL1591
SAMPLE-ANO-HOLO CIRCUIT FOR CCO IMAGERS
03327. SEPTEMBER 1989
• 15-MHz Sampling Rate D OR P PACKAGE

(TOP VIEW)
• 30-ns Acquisition Time
• Diode-Bridge Switch ANLG v e e ( J 8 DGTL Vee
ANLG IN 2 7 DGTL IN
• 25-MHz Bandwidth ANLG GND 3 6 DGTL GND
• Low-Voltage Supply ANLG OUT 4 5 SUB GND
description
The TL 1591 is a monolithic integrated sample-and-hold circuit with excellent performance features using the
BiFET process with Schottky-barrier diodes and designed for use with CCD area imagers. This device consists
of an ultra-fast input buffer amplifier, adigital-controlled diode-bridge switch, and a high-impedance output buffer
amplifier. The electronic switch is controlled by an LS-TTL-compatible logic input. ~
m.
en
. -_ _ _ _ _...:.4 ANLG OUT C
o
'';::;
ANLGIN ~}--4J----i CJ
C
:::I
/ u..
/ ....
r0-
/ O
C.
DGTLIN~/ C.
:::I
--
VJ
en
r0-
O
en
C
Q)
VJ
Q)
en
co
E
C
(,)
(,)
PRODUCTION DATA documents contain information Copyright © 1989, Texas Instruments Incorporated
currant as of publication date. Products confarm to
specifications par the terms of Taxas Instruments TEXAS ", 2-89
:~:~:~~i~ai~r:1~7i ~!~::i:r :'~O:=:::t:~~ not INSTRUMENTS
POST OFFICE SOX 655303 • DALLAS, TEXAS 75265
TL1591
Supply voltage, Vee ......................................................................... 7V
Digital input voltage .................................................................... 0 to Vee
Continuous total dissipation ........................................... See Dissipation Rating Table
Operating free-air temperature range, T A ............................................ -25°C to ao°c
Storage temperature range ....................................................... -55°C to 150°C
DISSIPATION RATING TABLE
TA s 25'C DERATING FACTOR TA = 80'C

PACKAGE
POWER RATING ABOVE TA = 25'C POWER RATING
D 725mW 5.BmW/"C 406mW
P 1000mW B.OmW/"C 560mW
recommended operating conditions

MIN NOM MAX UNIT
("') Vee Supply voltage 4.75 5 5.5 V
("') V,H High-level digital input voltage 2 V
o V,L Low-level digital input voltage O.B V
V 'IPP ) Peak-to-peak analog input voltage O.B V
3
III
(Q electrical characteristics over operating free-air temperature range (unless otherwise noted)
C'D TVPt
PARAMETER TEST CONDITIONS MIN MAX UNIT
(J) V ,K Input clamp voltage -1.5 V
C'D
:::J VOIPP) Analog peak-to-peak output voltage 1.1 V
!II I'H High-level input current Vee = 5.5 V, V,H =2.7 V 20 flA
o
... Low-level input current Vee = 5.5 V, V,L =0.4 V -0.2B -0.4 rnA
I'L
--
!II
(J)
s:::
'0
10
Icc
r,
Analog output current
Supply current
Input resistance
Vee = 5.5 V
0.6
15
10
20
rnA
rnA
kQ
'0 ro Analog output resistance 50 Q
o
...
r+
operating characteristics
"T1 PARAMETER MIN TVPt MAX UNIT
s:::
:::J Linearity 0.7% 2%
(")
r+ Av Voltage amplification O.S 0.9 VN
O· Sample-to-hold offset error 15 mV
:::J 50
!II Sample-mode offset error -50 mV
-150
Hold-mode feedthrough -50 dB
Hold-mode droop 100 ~V/~s
t All typical values are at Vee =5 V, TA =25'C.
2-90 TEXAS ~
INSTRUMENTS
TL1591
dynamic characteristics (see Figure 1)

PARAMETER MIN TYp! MAX UNIT
Acquisition time 0.6 V to 2% (see Note 1) 18 ns
Acquisition time 0.6 V to 1% (see Note 1) 31 ns
Hold-mode settling time (see Note 2) 35 ns
Sampling-mode bandwidth 25 MHz
Sampling rate 15 MHz
t All typical values are at Vee = 5 V and TA = 25'C.
PARAMETER MEASUREMENT INFORMATION
III
c::
SAMPLE-HOLD
o
'';:::
OUTPUT (.)
c::
I ::l
......
LL
ANALOG ~ o
INPUT" /
SIGNAL l& / Q.
:Y Q.
" / ::l
--...
...... - '"'SAMPLE CJ)
COMMAND
I II
SAMPLE CONTROL PULSE

o
III
c::
Q)
FIGURE 1. SAMPLE-HOLD DEFINITIONS CJ)
Q)
NOTES: 1. Acquisition time is the time required, after the closing of the sampling switch, for the hold capacitor to charge to a full-scale voltage en
change and then remain within a specified error band around the final value. CO
2. Hold-mode settling time is the time from the hold command transistion until the output has settled within a specified error band around
the final value.
E
c
(,)
(,)
TEXAS ~ 2-91
INSTRUMENTS
TL1591

Vee
1
;::, 33",F
TL1S91
1 8
'--- ANLGVee DGTLVee f--
ANALOG
INPUT
1
soo (
33",F
-1~ ANLGIN DGTLIN

7
) 500
COMMAND INPUT
(SAMPLING PULSE)
f
•
soo SOO
3 6
ANLGGND DGTLGND r-----<
(")
(")
c ~ 97S0 330 ",F 4
S
-1~
ANALOG
SOO ( ANLGOUT SUBGND
OUTPUT
3
Q)
to 530
CD
en
CD
:J
en
o... FIGURE 2. TEST CIRCUIT
--en
en
s::::
"0
"0 5
o...
.... 4
."
s:::: 3
:J
(")
:!".
o
:J
en 40 50
COMMAND DURATION-ns
FIGURE 3. SAMPLE/HOLD ACCURACY VS COMMAND DURATION
2·92 TEXAS ~
INSTRUMENTS
TLD369
DUAL CCD IMAGE·SENSOR CLOCK DRIVER
03296, JUNE 1989
• Dual Inverting MOS Driver P PACKAGE
U
(TOP VIEW)
• Low Standby Power Dissipation
NC 8 NC
• Versatile Interface Circuit for Use between 1A 2 7 1Y
TTL Levels and Level·Shifted High·Current.
VEE 3 6 VCC
High-Voltage Systems
2A 4 5 2Y
• Inputs May Be Level-Shifted by Use of a
NC-No internal connection
Current Source or Capacitive Coupling or
Driven Directly by a Voltage Source logic symbol t
• Designed to Be Functionally Interchangeable
~
with National DS0026 1A TTL/MOS ~7 1Y
• Capable of Driving High-Capacitance Loads 2A 4 -----t,
1-_ 5 2Y
• VCC Supply Voltage Variable over Wide
Range to 22 V Maximum with Respect to tThis symbol is in accordance with ANSI/IEEE Std 91-1984 and
VEE lEe Publication 617-12.
(I)
• Operates from Standard Bipolar and/or MOS r:

Supply Voltage
logic diagram o
';:
o
• High-Speed Switching r:
::I
• Transient Overdrive Minimizes Power u.
Dissipation ......
description
o
Q.
Q.
The TLD369 is a monolithic dual MOS driver and ::I
en
interface circuit that operates with either
current-source or voltage-source input signals.
The device accepts appropriate level-shifted
input signals from TTL or other logic systems and
--...
( I)
o
(I)
provides high-current and high-voltage output r:
Q)
levels suitable for driving MOS circuits. CJ)
Specifically. it may be used to drive address,
Q)
control. and/or timing inputs for several types of C)
MOS RAMs and MOS shift registers. ca
The TLD369 operates from standard MOS and/or bipolar supplies in most applications. This device has E
been optimized for operation with Vee supply voltage from 12 V to 20 V positive with respect to VEE.
However. it is designed so as to be usable over a wide range of Vee, o
u
Inputs of the TLD369 are referenced to the VEE terminal and contain a series current-limiting resistor. u
The device will operate with either positive current input signals or voltage input signals that are pOSitive
with respect to VEE. In many applications. the VEE terminal is connected to the MOS VDD supply of - 12 V
to -15 V with the inputs to be driven from TTL levels or other positive voltage levels, The required negative-
level shifting may be done with an external p-n-p transistor current source or by use of capacitive coupling
and appropriate input voltage pulse characteristics.
The TLD369 is characterized for operation from ooe to 70 oe.
PRODUCTION DATA documonts conl.in inform.'ion Copyright © 1989, Texas Instruments Incorporated
cumot IS of publicatioD dat8. Products conform to
specifications per the terms 0' T8XIS Instruments TEXAS " ,
==:=i;·i~:I~7a ~!::::i!fn ~i;:::~n:.:~~ not INSTRUMENTS
2-93
TLD369
DUAL CCD IMAGE-SENSOR CLOCK DRIVER
schematics of inputs and outputs
EQUIVALENT OF EACH INPUT TYPICAL OF BOTH OUTPUTS

vcc'________~----_ ----~------__--~I--VCC
INPUT
f---",-OUTPUT
VEE--------~----___
(")
------~----~--~~VEE
(")
o
3 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
CLl
cc
(I)
Supply voltage range of VCC (see Note 1) .... , ................ , . . . . . . . .. -0.5 V to 22 V
Input voltage. , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 5.5 V
en
(I)
Continuous total dissipation at (or below) 25 DC free-air temperature (see Note 2) . . . . . .. 1000 mW
Operating free-air temperature range .................................... " 0 DC to 70 DC
::J
III Storage temperature range ......................................... - 65 DC to 150 DC
...
o Lead temperature 1/16 inch from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 260 DC
--enc:
III
~
NOTES: 1. Voltage values are with respect to the VEE terminal unless otherwise noted.
2. For operation above 25°C free-air temperature, derate linearly to 640 mW at 70°C at the rate of 8.0 mW/oC.
~ recommended operating conditions

o... MIN NOM MAX
r+
Supply voltage, Vee 4.75 20 22
"Tl o 70
c: Operating free-air temperature, T A
::J
(') definition of input logic levels
:!'-
o PARAMETER MIN TYP MAX UNIT
::J VIH High-level input voltage 2.5 4.5 V
III
VIL low-level input voltage 0.5 V
IIH High-level input current 8 20 mA
IlL Low-level input current 1.5 mA
2-94 TEXAS . "

INSTRUMENTS
TLD369
electrical characteristics over recommended ranges of Vee and operating free-air temperature (unless
otherwise noted)
PARAMETER TEST CONDITIONS (See Nole 31 MIN Typt MAX UNIT
VIK Input clamp voltage II ~ -15 rnA -1.5 V
VIL ~ 0.5 V, IOH ~
-50 ~A
Vee- 1 Vee- O.7
IlL ~
0.7 rnA, IOH ~ -50 ~A
VOH High-level output voltage V
VIL 0.5 V,
~ IOH ~ -10 rnA
Vee- 2.3 Vee- l .B
IlL ~ 0.7 rnA, IOH ~ -10 rnA
VIH ~ 2.5 V, IOL ~ 10 rnA
0.15 0.3
IIH ~ 8 rnA, IOL ~ 10 rnA
VOL Low-level output voltage V
Vee ~ 10 V 10 22 V, VIH ~
2.5 V, IOL ~ 30 rnA
0.2 0.4
Vee ~ 10 V to 22 V, IIH ~ 8 rnA, IOL ~ 30 rnA
VOK Output clamp voltage VI ~ 0, IOH ~ 20 rnA Vec+1.5 V
II ~ 20 mA 3.7 5
VI Input voltage II ~ 8 mA 2.4 3 V
II ~ 1.5 rnA 0.4 0.6
CI)
VI ~ 4.5 V 27 45
c:
II Input current VI ~ 2.5 V 9 15 mA o
"';;
VI ~ 0.5 V 1.5
(.)
Supply current from Vee, Vee ~ 22 V, Both inputs at 0 V,
c:
lee(H) 0.5 rnA
both outputs high No load ::l
lee(L)
Supply current from Vee,
both outputs low
Vee ~ 22 V,
No load
Both inpuls al 3 V,
7 12 mA
....o
LL
tAli typical values are at Vee ~ 20 V and TA ~ 25°C.

NOTE 3: Many of these parameters are specified independently for either voltage source or current source external forcing functions at
0.
0.
-.
the inputs. Use the appropriate set of specifications for each application. ::l
en
switching characteristics, Vee = 20 V, T A = 25 °e CI)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT oCI)

Delay time, low-to-high level output 8 16 24 ns
tDLH c:
tDHL Delay time, high-to-Iow-Ievel output 4 11 20 ns Q)
tTLH Transition time, low-to-high-Ievel output
eL
RD
~
~
390 pF,
10O,
8 18 30 ns en
tTHL Transition time, high-to-Iow-Ievel output 6 16 30 ns Q)
See Figure 1
tpLH Propagation delay time, low-to-high-Ievel output 16 35 54 ns C)
tpHL Propagation delay time, high-to-Iow-Ievel output 10 28 50 ns ctI
E
c
u
u
TEXAS • 2-95
INSTRUMENTS
TLD369
DUAL CCD IMAGE·SENSOR CLOCK DRIVER
20V
r --J---,I Vcc
I I
PULSE 200 !l I I
GENERATOR I--.-Nv-'I!----I ~I----t-_"'I'v-__- - - OUTPUT
(See Note A)
I CL
I
I
•
(See Note B)
I VEE
L----:r--..J
INPUT
("')
("') TEST CIRCUIT
o
3Q) s 5 ns -r------1 )4-----t- S 5 ns
CO
I ~1-_ _ _ _ ---vL_+ ____ --5V
CD 90% 90%
I I
en ~~ I I
CD
:::l
en
l I I
10% te-----10.5 ~s ------<.~I 10%
...en
o
I "------- 0 V
--en
r:::::
'C
I--- tpHL --,
I
I
I
!---t- tTLH
'0 I I I, _ _ _ v
...o... VCC-3 V I
tOLH+---j
l.r
I VCC-3 V
OH
"T1
r::::: OUTPUT I
:::l I
(')
=-.
o
:::l VOLTAGE WAVEFORMS
en
NOTES: A. The pulse generator has the following characteristics: PRR = 1 MHz, Zout = 50 0.
B. CL includes probe and jig capacitance.
FIGURE 1. SWITCHING TIMES, EACH DRIVER
2-96 TEXAS ~
INSTRUMENTS
TLD369
TOTAL DISSIPATION
(BOTH DRIVERS)
vs
FREQUENCY
1000
900 r
VCC~20V
RO ~ 20 H III I /
800 r--
TA = 25°C
I I I
/ / / II
3: 700
CL ~ 1000 pF II /
Ir"fl ,;
E r
CL = 800 pF-
b 600
.2 CL = 600 pF-f-' j, /
! 500
'iii j\. IfCL = 400 pF
is 400 II
~ 300 J: Vv L c IJo~~~I- CI)
c::
~ V-
Q.
I-' / "..... LIIIIU o
200 -.;.
~o Loa,d-=PHII
100
~ ~ :::'f--' (.)
c::
1. .duty
Input: 3·volt square wave (50% 1 1 , '.','
cycle) ::::J
o
0.1 0.2 0.4 0.7 1 2 4 7 10
......
LL
f - Frequencv - MHz o
c.
FIGURE 2 C.
-::::J
en
...
CI)
o
CI)
c::
Q)
CJ)
Q)
C)
CO
E
c
u
u
TEXAS • 2-97
INSTRUMENTS
(')
(')
o
3
Q)
cc
CD
(f)
CD
:::J
C/l
o
~
--c:
C/l
(f)
'0
'0
o
~
.-+
'TI
c:
:::J
C')
~.
o
:::J
C/l
2-98
1
....·._G..;.e..... ··._.a_ti_()_n~__________......-'.
n_e_ra_f_.ln....f_o_rm_
.
Optocouplers (Isolators)
;. :: ~.".
3-1
o
'C
r+
o
(')
o
r::::
'C
CD
...
en
-ioii
Dr
r+
o
...
-en
3-2
3N261. 3N262. 3N263
OPTOCOUPLERS
02655, OCTOBER 19B1
GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED

TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR
• Photon Coupling for Isolator Applications
• Very High Current Transfer Ratio _, , 500%
• High-Voltage Electrical Isolation , , , '-kV Rating
• Stable Over Wide Temperature Range
• Hermetically Sealed TO-72 Package
description
This optocoupler features an improved current transfer ratio (CTR) at an input of one milliampere making it ideal
for coupling with isolation from low-output MOS and CMOS devices to power devices or other systems. Typical appli-
cations include motor~speed controls, numeric control systems, meters, and instrumentation.
mechanical data
THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE"
4 LEADS 0,483 (0.019) DIA

0,406 (0.016) 14---.1- 2,54 (0_100) DIA
5,34 (0.210) -_4----.t
4,32 (0.170)
.-
4,96 (0.195)
4,52 (0.178)
DIA
--'--- ~
...
II)
5,84 (0.230)
4,31 (0.209) MAX --II
0,76 ( 0 ' 0 3 0 ) U
~
DIA
c..
12,7 (0.500)
:::::s
MIN
o
(J
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES. ....oc..

ALL JEDEC TO-72 DIMENSIONS AND NOTES ARE APPLICABLE
o
*absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
Input to-Output Voltage ±1 kV
Collector-Emitter Voltage 40 V
Emitter-Collector Voltage 7V
Input Diode Reverse Voltage ..... _ ... _ ... __ . . . . . . . . . . . . . . . _ ..... _ ..... _ . . . . . . . . _ .. 2 V
Input Diode Continuous Forward Current at (or below) 65°C Free·Air Temperature (See Note 11 40 mA
Continuous Collector Current ___ ... __ .... __ ...... _ . . . . . . . . . . . . . . _ .... ___ .. __ .. _ _ _ 50 mA
Peak Diode Current (tw < 1 MS, PRR < 300 pps) . . . . . . . . . _ ..... _ . . . . . . . . . . . . . . . . . . . _ .. _ . .. 1 A
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (See Note 21 190 mW
Operating Free-Air Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _ . _ ...... , -55°C to 125°C
Storage Temperature Range . _ . _ ... ___ ... _ . _ ...... _ . . . . . . . __ . _ . _ ...... _ . _ _ _ -55°C to 125°C
Lead Temperature 1/16 Inch from Case for 10 Seconds . . . . . . . . . . . . _ .... _ ... _ .. _ . _ ... _ ... _. 240° C
NOTES: 1. Derate linearly to 12SoC free-air temperature at the rate of 0.67 mAlC.
2. Derate linearly to 125 0 C free-air temperature at the rate of 1.9 mW/ C.
+JEDEC registered data. This data sheet contains all applicable JEDEC registered data in effect at the time of publication.
current as of publication date. Products conform to
specifications per the terms of Texas Instruments
::~~:~i~8i~:,~1Je ~!::i~~ti:: :.~o::;:;:;:r::'s~S not TEXAS . " 3-3
INSTRUMENTS
3N261. 3N262. 3N263
OPTOCOUPLERS
*electrical characteristics at 25°C free-air temperature (unless otherwise noted)

3N261 3N262 3N263
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Collector~Emitter IC=l rnA, Ie =0,
V(BR)CeO 40 40 40 V
Breakdown Voltage IF = 0
Emitter-Collector Ie = 100llA, IC= 0
V(BR)eCO 7 7 7 V
Input Diode Static
IR VR =2V 100 100 100 IIA
Reverse Current
Vce=5V,
0,5 1 5 2 10
IF = 1 rnA
VCE=5V,
0,7 1.4 2.8
On-State IF = 2 rnA, TA = -55°C
IC(on) rnA
Collector Current VCE=5V,
IF = 2 rnA, TA=100°C 0.5 1 2
VCE=5V,
IF= lOrnA, See Note 3 50 80 90
•
VCE = 20V,
6 100 6 100 6 100 nA
Off-State IF = 0
IC(off)
Collector Current VCE-20V,
4 100 4 100 4 100 IIA
IF =0, TA=100°C
IF=10mA, TA=-55°C 1 1.7 1 1.7 1 1.7
o
'C
VF
Input Diode Static
Forward Voltage
IF=10mA
IF -10 rnA,
0.8 1.4 1.5
1.3
0.8
0.7
1.4 1.5
1.3
0.8
0.7
1.4 1.5
1.3
V
TA-l00°C 0.7
P+
o IC = 0.5 rnA,
0.3
n IF = 2 rnA
o
c: VCE(sa,)
Collector Emitter IC= 1 rnA,
IF = 2 rnA
0.3 V
'C Saturation Voltage
CD
... IC=2mA,
0.3
IF = 2 rnA
rn
Input-to-Output
'10 Vjn-out == ±1 kV, See Not. 4 1011 10 12 1011 10 12 1011 10 12 .11
I"ternal Re5istance
rn
o Cio
Input-to-Output Vin-out == 0, f= 1 MHz,
2.5 5 2.5 5 2.5 5 pF
iir
P+
Capacitance See Note 4
o
... *switching characteristics at 25°C free-air temperature
~
3N261 3N262 3N263
'r Rise Time VCC-l0V, IF(on) - 5 rnA, 10 20 10 20 15 25 liS

tf Fall Time RL = lOOn, See Figure 1 10 20 10 20 15 25 liS
NOTES: 3. This parameter must be measured using pulse techniques, 'tw = 100 J,ts, duty cycle";; 1 %.
4. These parameters are measured between all the input diode leads shorted together and all the phototransistor leads short/itd
together.
OjIJEDEC registered data.
3-4 TEXAS
INSTRUMENTS
-.If
3N261. 3N262. 3N263
OPTOCOUPLERS

Adjust amplitude of input pulse for
IFlon) = 5 mA
INPUT
o....J L
INPUT
OUTPUT
(See Note b)
OUTPUT
R L "'100n
TEST CIRCUIT VOLTAGE WAVEFORMS
NOTES: a. The input waveform is supplied bv a generator with the following characteristics: lout = 50 n, tr ~ 15 ns, duty cycle ~ 1%,
tw"" 100Jjs.
b. Waveforms are monitored on an oscilloscope with the following characteristics: tr ~ 12 ns, Rin;;' 1Mn, Gin ~ 20 pF.
FIGURE l-SWITCHING TIMES
-...
I II
o
+'"
ca
(5
INPUT DIODE FORWARD CONDUCTION CHARACTERISTICS
10
9
-...
III
I II
TA = 25°C ~
8 C.
::l
<{
E 7
I o
o
1,
c 6 T o
+'"
i':
;;
u 5 I o
C.
"E
'"
;: 4
I
(;
"-
I
3
I
"-
2
/
o /
o 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF-Forward Voltage-V
FIGURE 2
TEXAS • 3-5
INSTRUMENTS
3N261, 3N26~ 3N263
OPTOCOUPLERS
3N262 3N262
COLLECTOR CURRENT COLLECTOR CURRENT
vs vs
COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER VOLTAGE
10
9mA
9 10
TA =25 C IF =2mA_ _
8mA
8 See Note 5
«
~--HL.,,,L-+----=-!-==---+-7 mA
E V--
--
7
.!.c I.-----
~--I-¥--,--+--o_=-+----+- 6 mA
e
:;
6
U /'
5
f IF~
~
~-#J~+-~_q:::::---+----+-4 mA ~ 4
u
(5
I 3 l--- f-..-- I
3mA 3d / IF = 1 mA
2
0_5~A-
2mA
1 mA IF
3
o
2 4 5 o
o
'C VCE-Collector-Emitter Voltage-V
2
VCE-Collector-Emitter Voltage-V
3 4 5
r+
o FIGURE 3 FIGURE 4
o
o
c: 3N262 3N262
COLLECTOR CURRENT
'C COLLECTOR CURRENT
CD
... vs vs
COLLECTOR-EMITIER VOLTAGE COLLECTOR-EMITTER VOLTAGE
VI
3.---~-----r----.---~----~ 6
VI 10 I
o I-- TA =25 C IF=2m~
Dr
r+ « «
5
l--"
...
o
~
E
~ 21-----c~:::::...-+--+-
E
.!.c 4 /'
~ ~
::J
U
S 1.5~--+--~~~-+--~---
::J
U
~
~
3
I IF = 1_5 mA
u
~
(5
u
~
(5
u 2
I
/1V-
"
2 1~~==~----4-~~~==~:t~::=
0_5H IF = 0.4 mA
IF=0_6mA 2
I)) IF = 1 mA
3
IF = 0_2 mA
A ~ 0_1 0_2 0_3
1
IF=0_5mA
0.4 0_5
2 4 5
VCE-Collector-Emitter Voltage-V VCE-Collector-Emitter Voltage-V
FIGURE5 FIGURE 6
NOTE 5: Thi$ parameter was measured using pulse techniques. tw == 100 jls, duty cycle"" 1%.
3-6 TEXAS . "

INSTRUMENlS
3N261, 3N262, 3N263
OPTOCOUPLERS
3N262 3N262
COLLECTOR CURRENT RELATIVE ON·STATE COLLECTOR CUR RENT
vs vs
INPUT DIODE FORWARD CURRENT FREE·AIR TEMPERATURE
100 u 1.6
70
VCE 5V
0",
~ IF = 1 rnA
<{
40
E 20 f-
TA 25°C
See Note 5 /
~ 1.4
<{
':: 1.2
1"1'0
IF = 2 rnA
"
Lc: 10 1/ '"
(I)
~
(I)
t:: 7 ~ 1.0
~
:l >
U 4 8
0.8
B (I)
~
CJ 2
1/ >
.~
.!!!
-0 a; 0.6
u 1
I'::t--
<l:
!.., 0.7
~
c:
~ 0.4 ~
II
0.4 :l
u
0.2 V B 0.2
0.1 V ~
o o
0.1 0.2 0.4 0.7 1 2 4 7 10 u -75 -50 -25 o 25 50 75 100 125
...o
Ul
IF-Forward Current-rnA
FIGURE 7
TA-Free·Air Ternperature-oC
FIGURE 8
...
C'O
(5
-...
Ul
Ul
~
C.
::I
o
o
...
o
c.
o
NOTE 5: This parameter was measured using pulse techniques. tw = 100 J.1.s, duty cycle ~ 1%.
TEXAS .." 3-7

INSTRUMENTS
o
...o
"0
(")
o
c:::
"0
CD
....
C/)
C/)
...o2-
Q)
....
C/)
3-8
4N22. 4N23. 4N24
OPTOCOUPLERS
01424, AUGUST 1973-REVISED APRIL 1987
JEDEC REGISTERED DEVICES

• JAN, JAN TX, JAN TXV Versions Available
• Base Lead Provided for Conventional Transistor Biasing
• High Overall Current Gain ... 1.5 Typ (4N24)
• High-Gain, High-Voltage Transistor ... hFE = 700 Typ (4N24),
V(BR)CEO = 35 V MIN
• High-Voltage Electrical Isolation ... 1-kVRating
• Stable over Wide Temperature Range
*mechanical data
THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE
r
AU lEADS INSULATED FROM CASE
,
470 0.185) ~ 6 lEADS
-, r
3,94 0.156
1.02~~O:0l
0,483 ~O.019) CIA
0,406 (0.016)
-...r.n
••51 {ot, [ ]
7,74 (0.3061
'9.40.!.370I DIA
8,51 (0.335)
NC-No internal connection
..
~
o
o
L ~ -.l +--~"* r.n
i.. ,j
12.7{O....
MIN
-...
r.n
NOTE: a. Leads having maximum diameter shall be within 0,18 mm (C.007 inch) of true position relative ~
to a maximum-width tab when measured in the gaging plane between 1,371 mm (0.054 inch) c..
and 1,397 mm (0.055 inch) below the seating plane. :J
o
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES ..o
o
o
c..
Input-to-Output Voltage .. _ .. _ ..... _ . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . ±1 kV
Collector-Base Voltage . . . . . . . . . • . . . . . . . • . . . . . • . . . . . . . . . . . . . _ . . . . . . . . . . . . . . . . . . . . . . 35 V
Collector-Emitter Voltage ... _ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . _ ..... _ ........ _ 35 V
Emitter-Base Voltage ...... _ ... _ . . . . . . . . . . . • . . _ . • . . . . . . . . . . . . . . . . . . . . . . . • . _ ........ 4 V
Input Diode Reverse Voltage .•... _ ........ _ . . . . . • . . . . . . . . . . . _ . . . . . . . . . . . . . . . _ ........ 2 V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (See Note 1) _ .... _ .. 40 mA
Continuous Collector Current . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . • . . . . . . . . _ .. 50 mA
Peak Diode Current (See Note 2) ... _ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1A
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (See Note 3) ......... 300 mW
Storage Temperature Range • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _55° C to 1250 C
Lead Temperature 1,6 mm (1/16 Inch) from Case for 10 Seconds . . . . . . . . . . . • . . . . . . . . . . . . . . . . . . . 240°C
NOTES: 1. Derate linearly to 12S o C free-air temperature at the rate of 0.67 mAle.
2. This value applies for ~w oS; 1 /J.s, PRR ~ 300 Pps. °
3. Derate linearly to 125 C free-air temperature at the rate of 3 mW/ C.
·JEDEC registered data. This data sheet contains all applicable JEDEC registered data in effect at the time of publication.
PRODUCTION DATA documonts contain information Copyright © 1983, Texas Instruments Incorporated
current IS of publication date. Products conform to
specificatiDns per the terms of rexas Instruments
TEXAS •
=:~~~lr::I~"'i ~~:~:~i:f lI'O::~:::t:~~ not INSTRUMENTS
3-9
4N22, 4N23, 4N24
OPTOCOUPLERS

4N22 4N23 4N24
Collector-Base IC" 100 "A, IE" 0,
V(BR)CBO 35 35 35 V
Breakdown Voltage IF" 0
Collector-Emitter IC" 1 mA, IB = 0,
V(BR)CEO 35 35 35 V
Emitter-Base IE = 1001'A, IC= 0,
V(BR)EBO 4 4 4 V
Input Diode Static
IR VR= 2V 100 100 100 I'A
Reverse Current
VCE = 5 V, IB = 0,
0.15 0.2 0.4
IF = 2 mA
VCE=5V, IB = 0,
1 2.5 4
On-State IF=10mA, TA"-55"C
IC(on) mA
Collector Current VCE = 5 V, IB = 0,
2.5 4 6 8 10 15
•
IF = 10mA
VCE=5V, IB = 0,
1 2.5 4
IF=10mA, TA = 100"C
VCE - 20 V, IB - 0,
100 100 100 nA
Off·Slale IF = 0
o
't:J
IC(off)
Collector Current VCE = 20V,
IF = 0,
IB = 0,
TA=100°C
100 100 100 I'A
o
(') IF = 10mA. TA =-55°C 1 1.5 1 1.5 1 1.5
Input Diode Static
o VF
Forward Voltage
IF=10mA 0.8 1.3 0.8 1.3 0.8 1.3 V
r:: IF-1OmA, TA-lOO"C 0.7 1.2 0.7 1.2 0.7 1.2
't:J IC - 2.5 mA, IB - 0,
...
Ci)
tn Collector-Emitter
IF = 20mA
IC = 5 mA, IB = 0,
0.3
VCE(,al) 0.3 V
Stauration Voltage IF=20mA
rn
o Ic=10mA, IB = 0,
0.3
;- I nput-ta-Output
IF = 20mA
r+
o kyo 10 11 n
... '10 Internal Resistance
Vin-out = ±1 See Note 5 lOll 10'1
-
tn
Cio
Input-ta-Output
CapaCitance
Vin-out
See Note 4
= 0, f = 1 MHz.
5 5 5 pF
*switching characteristics at 25° C free-air temperature

4N22 4N23 4N24
I, Rise Time VCC= 10V, IF(on) = 10 mA, 15 15 20 1"
If Fall Time RL = 100 n, See Figure 1 15 15 20 1"
NOTE 4: These parameters are measured between all the input diode leads shorted together and all the phototransistor leads shorted together,
*JEDEC registered data
3-10
TEXAS •
INSTRUMENTS
POST OFFICE BOX 655303 • DALLAS, -':EXAS 75265
4N22, 4N23, 4N24
OPTOCOUPLERS
*PARAMETER MEASUREMENT INFORMATION

INPUT
r---r--ifiIt--~--'\""'-o
700 !!
0--1 ~
'r-f-~--oOUTPUT
IN P lJ T
I
..... ton --I
I
I+l o ff'"
I
(See NOle 1>1 Adjust amplitude of input
pulse for IF(on) ~ 10 rnA OUTPUT
'f~
I I
~90-'y'-,--~~--~9~0"~k~ :
I
I
I
NOTES: a. The input waveform is supplied by a generator with the following characteristics: Zout '" 50 S~, tr;e:;; 15 ns, tw == 100 iJ,s, duty
cycle""" 1 %.
b. Waveforms are monitored on an oscilloscope with the following characteristics: tr >( 12 n5, Rin> MS1, Gin 0>( 20 pF.
*JEOEC registered data FIGURE l-SWITCHING TIMES
4N22 4N23
COLLECTOR-EMITTER VOLTAGE COLLECTOR·EMITTER VOLTAGE

50r.'-B-O~0~----~---'-----"--~
TAo 25'C ---+----+--

See Note 5
<i 40 I-"-'~':""i--=-----f
E
~
<i
E ...r.tl
o
8
]
i
u
<oJ
.!2
20
0
] 20 o
"
u r.tl
I
!,?
"
u
I
10 !,? 10
...r.tl
Q)
25
Q..
10 15 20 25 10 15 20
::::s
VeE --Collector-E mltter Voltage-- V
4N24
VeE-Collector-Emitter Voltage- V o
FIGURE 2 CJ
COLLECTOR CURRENT
FIGURE 3
o
<oJ
COLLECTOR-EMITTER VOL TAGE c..
o
<i
E
~
~
60
u
0
] 40
'0
u
I
!,?
VCE-Collector-Emmer Voltage-V
FIGURE 4
NOTE 5: This parameter was measured using pulse techniques. tw 100 /ls, duty cycle '-' 1%.
TEXAS
INSTRUMENTS
-I!J 3-11
4N22. 4N23. 4N24
OPTOCOUPLERS
NORMALIZED ON-STATE COLLECTOR CURRENTt
INPUT DIODE FORWARD CONDUCTION CHARACTERISTICS FREE-AIR TEMPERATURE

40 '+.::.. 1.6
TA = 25°C g VCE = 5 V
35 U 1.4 !-IB = a
I IF = 10 rnA
~
~
E 30 1.2
~ is u
1.0
~
u ] V .........
r--....
"E 20 "0 0.8
u
...........
j 15
o~ 0.6
J 10 6 0.4
~
" 0.2
I) z
§
a
aa 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -75 -50 -25 25 50 75 100 125
VF-Forward Voltage-V TA-Free-Air Temperature- °c
t Normalized to value at T A"" 25 0 C
•
FIGURE 5 PHOTOTRANSISTOR COLLECTOR CURRENT FIGURE 6
vs
INPUT-DIODE FORWARD CURRENT
100
~ VCE - 5 V
40
T IB -0 4N2
~ TA -25°C
o ~ 10
I '/
....
"C
o
u
~
II
4N24
4N22
(') '3
u
o
s::: 0.4
"C ·1 1/
CD
... § 0.1
fI
-
til
( jj
o
E
0.04
0.01
0.1
I 77!Ir
0.4
mn
10 40 100
....Dr
I F-Input-Diode Forward Current-rnA
FIGURE 7
...
o OFF·STATE COLLECTOR CURRENT AVERAGE SWITCHING TIME
-
til
'i:
~
10 000
1000
I--
I"
VCE=20V
18'" 0
I"
'"
FREE·AIR TEMPERATURE
/
1000
VCC - 10 V
LOAD RESISTANCE
IFlon) - 10 rnA
TA 25°C
IF = a
~
u 100
/ See Note 6
j 10
/
;3 /
I
~
~
O.
11/
0.0 1
/
~I
+ '"
4
:y ~
0.00 1 1
-50 -25 a 25 50 75 100 125 10 40 100 400 1k 4k 10k
TA-Free-Air Temperature- °c
RL -Load Resistance-O
FIGURE 8 FIGURE 9
NOTE 6: This parameter was measured in the 1e~t .clrcuit of Figure 1 with R L varied between 40 .n and 10 kil.
TEXAS " ,
3-12
INSTRUMENTS
4N22A. 4N23A. 4N24A
OPTOCOUPLERS
03055, AUGUST 1987
JEDEC REGISTERED DEVICES

• Both Input and Output Circuits Are Isolated from the Can
• JAN, JAN TX, JAN TXV Versions Available
• High Overall Current Gain ... 1.5 Typ (4N24A)
• High-Gain, High-Voltage Transistor ... hFE = 700 Typ (4N24A).
V(BR)CEO = 35 V Min
• High-Voltage Electrical Isolation ... 1-kV Rating
* mechanical data
ALL LEADS ARE ELECTRICALLY INSULATED FROM THE CASE
470 (0 185: r.... 6 LEADS

394(0155
-,r-- I
1 02 10 040)
MAX
r0483(00191DIA
0406 (0 016)
B 2
",,'IOL, ~ 'J37010'A~ 13.(;5 ~~\/ _ ---y-----i\~

NC-No,"'",,',O""''''O"
...
en
....o
L
774(0305) 851 (0335) \ 114(0045)
~ I \ ~~ ->< l.~ffi(OOi9j ~
__ ~I------1 508102001 ''': --/ ~~864.--JE...~~ o
~A5 en
NOTE: a.
l.-127105001-J
MIN
DIA
(See Note ai I
" '.......
Leads having maximum diameter shall be within 0,18 mm (0.007 inch) of true position relative
to a maximum-width tab when measured in the gaging plane between 1,371 mm (0.054 inch)
0711 (00281
-...
en
and 1,397 mm (0.055 inch) below the seating plane. ~
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES a.
:::::s
o(.)
* absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
Input-to-output voltage .... ± 1 kV
....o
0-
Collector-base voltage. 35 V
35 V
o
Collector-emitter voltage
Emitter-base voltage .. 4V
Input diode reverse voltage. . 2 V
Input diode continuous forward current at (or below) 65°C free-air temperature
(see Note 1) . . ....... . 40 mA
Continuous collector current ......... . 50 mA
Peak diode current (see Note 2) ..... . .. 1 A
Continuous transistor power dissipation at (or below) 25°C free-air temperature
(see Note 3) . . . . . . .. 300 mW
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C
Lead temperature 1,6 mm (1(16 inch) from case for 10 seconds ............. . . . . . . . .. 240°C
* JEDEC registered data. This data sheet contains all applicable JEDEC registered data in effect at the time of publication.
NOTES: 1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/oC.
2. This value applies for tw :s: 1 J,tS, PRR :s; 300 pps.
3. Derate linearly to 125°C free-air temperature at the rate of 3 mW/oC.
~~~~~:~~i~8{::1~1~ ~!:~~~ti:r ~Io::;:~:t:r~~s not TEXAS
INSTRUMENTS
1!1 3-13
4N22A, 4N23A, 4N24A
OPTOCOUPLERS

4N22A 4N23A 4N24A
Collector-base IC - 100 ~A, IE - 0,
35 35 35 V
VIBR)CBO breakdown voltage IF = 0
Collector-emitter IC - 1 rnA, IB - 0,
VIBR)CEO breakdown voltage IF 35 35 35 V
=0
Emitter-base IE = 100 ~A, IC = 0,
4 4 4 V
VIBR)EBO breakdown voltage IF =0
Input diode static
IR
reverse current
VR = 2 V 100 100 100 ~A
VCE = 5 V, IB = 0,
0.15 0.2 0.4
IF = 2 rnA
VCE = 5 V, IB= 0, 1 2.5 4
On-state IF = 10 rnA, TA = -55°C
IClon) rnA
collector current VCE - 5 V, IB - 0,
2.5 4 6 8 10 15
IF = 10 rnA
•
VCE = 5 V, IB = 0,
1 2.5 4
IF = 10 rnA, TA = 100°C
VCE = 20 V, IB = 0,
100 100 100 nA
Off-state IF = 0
ICloft)
collector current VCE = 20 V, IB= 0, 100 100 100 ~A
0 IF = 0, TA = 100°C
"0 IF = 10 rnA, TA = -55°C 1 1.5 1 1.5 1 1.5
r+ Input diode static
0 VF IF - 10 rnA 0.8 1.3 0.8 1.3 0.8 1.3 V
n forward voltage
IF = 10 rnA, TA = 100°C 0.7 1.2 0.7 1.2 0.7 1.2
0
r:: IC = 2.5 rnA, IB = 0,
0.3
"0 IF = 20 rnA
...en
en VCElsat)
Collector-emitter
saturation voltage
IC = 5 rnA,
IF = 20 rnA
IB = 0, 0.3 V
-
en
0 Input-ta-output
IC
IF
= 10 rnA,
= 20 rnA
IB = 0, 0.3
or
r+
'10
internal resistance
Vin-out = ± 1 kV, See Note 4 1011 1011 1011 0
...0
en
Cio
Input-ta-output
C8D8citance
Vin-out - 0,
See Note 4
f = 1 MHz,
5 5 5 pF
*switching characteristics at 25°C free-air temperature

4N22A 4N23A 4N24A
tr Rise time VCC = 10 V, IFlon) = lOrnA, 15 15 20 ~
tf Fall time RL = 1000, See Figure 1 15 15 20 ~
NOTE 4: These parameters are measured between all the input diode leads shorted together and all the phototransistor leads shorted together .
• JEDEC registered data
3-14 TEXAS •
INSTRUM~NTS
4N22A, 4N23A, 4N24A
OPTOCOUPLERS

INPUT
r-----~--_M
200 II
__--~~~~INPUT
0-1
I
L
I
~Ion ~IOII
r-+-+--- OUTPUT
(See Nole Bl Adjust amplitude of input ~Ir 1+-*-11
pulse for IF(on) """ 1 0 rnA I ~__~O~U~T~PU~T~~~I I
RL = 100 {l I I
-=- VCC - 10 V
I
90% 90%
I
I I
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Zout = 50 n, tr :s; 15 nSf tw = 100 its,
duty cycle ~ 1 %.
B. Waveforms are monitored on an oscilloscope with the following characteristics: tr :s; 12 n5 , Rin ~ 1 MO, Cin :s; 20 pF.
* JEDEC registered data
4N22A 4N23A
'" '"
COLLECTOR·EMITTER VOLTAGE COLLECTOR·EMITTER VOLTAGE
...
(I)
50
18 "'0
I I
50
18 ;0
I ...
o
---
TA '" 2SoC TA '" 2S"C
See Note 5 I I See Note S
O~" CO
"~
E 40 .-- 40
~ "0
----
1. 40 ",p- - - - - ~
~
u
~
30
/'
~I
1~':lO"'P-_ _ _ ....--
~
~
u
30
+ _ _ _ If':lO"'P- - -
-P--l -...
(I)
( I)
---r
(;
u
I
5?
20
10
V
~ - If'20~
I
I
I
- j
(;
U
~
I
20
10
-----
If·20"'~
I
IF"" lomA
-
Q)
Q.
::::I
o(,)
IF :olomA
r- I
o
r-
o '----__.1 I
10
I
15 20 25
4N24A 0
10
I
15 20 25
...c.o
VCE- Collector-Emitter Voltage- V
COLLECTOR CURRENT
"
COLLECTOR-EMITTER VOLTAGE
Vee-Collector-Emitter Voltage-V o
FIGURE 2 FIGURE 3
100
IS'" 0
TA '" 25"C-
See Note 5
BO
"E
~
~
60
u
~ 40
'ii
u
I
5?
20 t:=l===f==r~-T"'--1
VCE~Collector-Emitter Voltage-V
FIGURE 4
NOTE 5: This parameter was measured using pulse techniques, tw = 100 P.s, duty cycle 1%.
TEXAS • 3-15
INSTRUMENTS
P0'3T OFFICE BO')( 655303 • DALLAS, TEXAS 75265
4N22A. 4N23A. 4N24A
OPTOCOUPLERS
NORMALIZED ON·STATE COLLECTOR CURRENTt
INPUT DIODE FORWARD CONDUCTION CHARACTERISTICS FREE·AIR TEMPERATURE

40 ~ 1.6
35
TA = 25°C
., .l! VCE = 5 V
u 1.4 -IB=O
IF"" lOmA
«
E 30 ~ 1.2
I
E 25
~
u
(]
]
1.0
V
- .........
r--...,
11 20 "0 0.8
u ...... r----..
j 15
~
~ 0.6
l- 10 a 0.4
]
.. 0.2
) §
Z 0
o0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -75 -50 -25 25 50 75 100 125
VF-Forward Voltage-V TA-free-Air Temperature-DC
t Normalized to value at T A'" 25° C
FIGURE 5 PHOTOTRANSISTOR COLLECTOR CURRENT FIGURE 6
INPUT·DIODE FORWARD CURRENT

100
'VCE=5V
: i .. =-25°C
!
o
"C
1 '/1'
r+
o
n
o
c:
"C
Ci)
"'"
UI
UI 0.01
o 0.1 0.4 10 40 100
Dr
r+
IF-Input-Diode Forward Current-mA
o OFF·STATE COLLECTOR CURRENT FIGURE 7

AVERAGE SWITCHING TIME
"'"
-
UI
10 000
I
I 1000
'"
LOAD RESISTANCE
t
':!
1000
~ ~BC!,;20V
IF'" a /
/V fVCC 10 V
[I
~";'Not 6
lOrnA
FT, - 25°C
u 100
] 10
/
;3
1/
~
is 0.1
1/
~
I
0.01
1/ :§\
+
o
N
4
III
Ii ,9
0.00 1 1 111111
--50 -25 0 25 50 75 100 125 10 40 100 400 1k 4k 10k
T A-free-Air Temperature- °c
RL -Load Resistance-Sl
FIGURE 8 FIGURE 9
NOTE 6: This parameter was measured in the test circuit of Figure 1 with RL varied between 40 {} and 10 kG.
3·16 TEXAS •
INSTRUMENTS
4N22. 4N22A. 4N23. 4N23A. 4N24. 4N24A
JAN. JANTX. AND JANTXV PROCESSING AND LOT ACCEPTANCE
This processing applies only to optocouplers ordered under part numbers shown below:
JAN4N22,JAN4N22A, JANTX4N22, JANTX4N22A, JANTXV4N22, JANTXV4N22A

JAN4N23, JAN4N23A, JANTX4N23,JANTX4N23A, JANTXV4N23, JANTXV4N23A
JAN4N24,JAN4N24A,JANTX4N24,JANTX4N24A,JANTXV4N24,JANTXV4N24A
TEST MIL·STD·750
JAN JANTX JANTXV
(PER MIL·S·19500/486A) TEST METHOD
100% Processing
I nternal visual 2072 X
Storage: TA == 12SoC, t = 72 h - X X
Temperature cycle: -5SoC to 12SoC, 10 cycles 1051 X X
Constant acceleration: 20,000 G, Y 1 axis 2006 X X
High-temperature reverse bias: IF = 0, T A = 12SuC, VeB = 20 V, t = 96 h 1039 X X
Power burn-in: IF = 40 rnA, PD == 275 ± 25 mW, t = 168 h 1039 X X
Hermetic seal, fine 1071 Condo G or H X X
Hermetic seal, gross 1071 Condo C or D X X
•
External visual 2071 X X
Product Acceptance
Group A
External visual: L TPD is 10 for JAN, 7 for JANTX and JANTXV 2071 X X X
Electrical: T A ~ 25"C, LTPD is 7 for JAN, 5 for JANTX and JANTXV
Electrical: T A ~ 100"C, L TPD is 10 for JAN, 7 for JANTX and JANTXV
as needed
as needed
X
X
X
X
X
X
...o
(/)
+'"
Electrical: T A ~ -55"C, L TPD is 10 for JAN, 7 for JANTX and JANTXV as needed X X X ctl
(5
-...
Group B·l: LTPD ~ 15 (/)
Solderability 2026 X X X
Thermal shock 1051 Condo B X X X (/)
Thermal shock 1056 Condo A X X X

~
Hermetic seal, fine 1071 Condo G or H X X X c.
Hermetic seal, gross 1071 Condo C or D X X X ~
Moisture resistance 1021 X X X
o
(.)
o
+'"
Group B·2: LTPD ~ 10
C.
Shock: 1500 G
Vibration: 50 G
2016
2056
X
X
X
X
X
X
o
Acceleration: 30,000 G 2006 X X X
Group B·3: LTPD ~ 20

Isolation voltage: VIC == 150 V, TA = 125<lC, t = 24 h 1016 X X X
Group B-4: LTPD is 7 for JAN, 5 for JANTX and JANTXV

High temperature life (nonoperating): TA "" 12SoC, t =: 340 h 1032 X X X
Group B·5: LTPD is 7 for JAN, 5 for JANTX and JANTXV

Steady-state operating life: t = 340 h 1027 X X X
TEXAS • 3-17
INSTRUMENTS
4N22. 4N22A. 4N23. 4N23A. 4N24. 4N24A
JAN. JANTX. AND JANTXV PROCESSING AND LOT ACCEPTANCE
TEST MIL-5TD-750
JAN JANTX JANTXV
(PER MIL-5-19500/486A) TEST METHOD
(Group C tests are run on one lot every six months)
Group C·1
Barometric pressure: LTPD = 10 1001 X X X
Group C-2
Physical dimensions: LTPD = 20 2066 X X X
Group C-3 (MIL-STD 202. Method 215)

Resistance to solvents: LTPD = 10 - X X X
Group C-4
Termina) strength: LTPD ~ 10 2036 Cond_ E X X X
Group C·5
Salt atmosphere: LTPD = 10 1041 X X X
Group C-6
High-temperature life (nonoperating): TA = 125°C, t = 1000 h, 1032 X X X
L TPD is 7 for JAN, 5 for JANTX and JANTXV
o
"C
Group C-7
Steady-state operating life: t = 1000 h, LTPD is 7 for JAN, 1027 X X X
1'+ 5 for JANTX and JANTXV
o
C')
o
I:
"C
...UIti"
UI
o
iii
1'+
o
...
-
UI
3-18 TEXAS •
INSTRUMENTS
POST OFFICE BOX 656303 • DAUAS. TEXAS 75265
4N25. 4N26. 4N27. 4N28
OPTOCOUPLERS
D2493, SEPTEMBER 1978-- REVISED MARCH 1983
COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS

• Gallium Arsenide Diode Infrared Source OpticaUy Coupled to a
Silicon N-P-N Phototransistor
• High Direct-Current Transfer Ratio
• High-Voltage Electrical Isolation. . 2.5-kV, 1.5-kV, or O.5-kV Rating
• Plastic Dual-In-line Package
• High-Speed Switching . . . tr 2 P.s, tf 2 p's Typical
mechanical data
The package consists of a gallium arsenide infrared-emitting diode and an n-p-n silicon phototransistor mounted on
a 6-lead frame encapsulated within an electrically nonconductive plastic compound, The case will withstand soldering
temperature with no deformation and device performance characteristics remain stable when operated in high-humidity
conditions_ Unit weight is approximately 0.52 grams.
NOTES:
a. Leads are within 0,127 (0.005) radius of true pOSition
t "'' -,
(T.P.) with maximum material condition and unit
~
' , ;~~.=::" installed.
b. Pin 1 identified by index dot.
~
c_ Terminal connections:
"T2 1- Anode
) Infrared-emitting
...o
II)
L~ "~""",f- LrH='tJ
IH 1151
~""".~"'
_ 1.1BIO.070)MA)(
- 6PLACU
-.1--
2_ Cathode
3_ No internal connection
diode
...
,"\~"'~"~';t-,~,""~
-SEATINGPlANE
}
'--"-""'! , 4, Emitter ctI
00 'JLr"" .,. 5_ Collector Phototransistor (5
3.'i'ITo""i251 ~
0.381(0.015)
FALLS WITHIN JEDEC MD·001 AM DIMENSIONS

6PLACU
ALL LINEAR DIMENSIONS ARE IN MI LLiMETERS AND PARENTHETICALLY IN INCHES

6. Base
-...
.!!l
I I)
Q)
absolute maximum ratings at 25°C free-air temperature (unless otherwise notedl C.
::l
'Peak Input-to-Output Voltage: 4N25 .,.,., .. ,." .. , .. ,. _ . , , . , . , . , , . , . , .... , , . , . , . _, ±2,5 kV o
CJ
4N26,4N27 , ..... , .. , ..
4N28 . _ . , . , ....... __ ..
·Coliector·Base Voltage . " . , ..... , ... ,', ... ,." .. ,
, ... , .. , . , .. , . , . ,
, ... , .. , .... , _ , . ,
... , .. , . , . " . , ...
... ___ . , . , .. , ± 1 ,5 kV
.. _ . __ ... , , ., ±0,5 kV
" .. ,., ... " . , ' _ 70 V
...c.o
·Coliector·Emitter Voltage (See Note 1) ,_. _ . , , __ , . , , . , , .. ____ , ... _ , _ , _ .. , ___ , _______ . _ _ _ 30 V o
·Emitter·Coliector Voltage ., ....... ,' _ . , ___ .. , . , _ .. , ... , _ . , . , . , , . , ... , ..... , . , . , , . , , ., 7 V
Emitter-8ase Voltage ,_,.,., ......... ,., .. , ... , ... , .. , .. , .. ,., ... , . " . , . " . " . " .. ,. 7 V
·lnput·Diode Reverse Voltage ........ ,., .... , ... , .................. , .... ,." .... " .. ,. 3 V
'Input-Diode Continuous Forward Current at (or below) 25°C Free·Air Temperature (See Note 2) 80 mA
'Input-Diode Peak Forward Current (t w = 300 !'s, duty cycle = 2%) ,. _____ , ___ . , ... __ . _____ .. , 3 A
'Continuous Power Dissipation at (or below) 25°C Free·Air Temperature:
Infrared-Emitting Diode (See Note 3) . -. , .. , .. , . , .. , .. , __ . ____ . ____ . _____ , . ____ . , ,_ 150 mW
Phototransistor (See Note 3) . ____________________________ . __ , . , _ , . ___ , _ _ _ _ _ _ _ __ 150 mW
Total, Infrared-Emitting Diode plus Phototransistor (See Note 4) .,., .. ,.," _ , .... _ _ _ _ _ _ __ 250 mW
'Storage Temperature Range ., _ .. , . , , . _ . __ , . , , _ , , ...... , .. , . , . _ , . , . , . ___ . _ _ - 55°C to 150°C
'Lead Temperature 1,6 mm (1/16 inch) from Case for 10 Seconds ___ ,., _____ ... " . " . , . " , _. 260°C
* JEOEC registered data. This data sheet contains all applicable JEDEC-registered data in effect at the time of publication.
NOTES: 1. This value applies when the base-emitter diode is open-circulated.
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mA/oC.
4. Derate linearly to 100°C free-air temperature at the rate of 3.33 mW/oC.
PRODUCTION DATA documents contain information C:0pyright © 1983, Texas Instruments Incorporated
currant as ~f publication date. Products conform to
spec:ificatio~s par the terms of Taxas Instruments TEXAS •
3-19
=~~:=i~ai~:I~~8 ~!:ti~~i:.n :IIO::~:~:t:~~s not INSTRUMENTS
4N25, 4N26, 4N27, 4N28
OPTOCOUPLERS
electrical characteristics at 25°C free-air temperature (unless otherwise noted)

4N25.4N26 4N27.4N2B
PARAMETER TEST CONDITioNS UNIT
MIN TYP MAX MIN TYP MAX
'V (BR)CBO Collector-Base Breakdown Voltage IC = 100 ~A. IE = O. IF =0 70 70 V
'V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1 rnA. IB - O. IF - 0 30 30 V
*V(BR)ECO Emitter-Collector Breakdown Voltage IE - 100 ~A. IB O. IF 0 7 7 v
*IR Input Diode Static Reverse Current VR - 3 V 100 100 ~A
On-State Collector Current
*IC(on VCE = 10 V. IB = O. IF = 10 rnA 2 5 1 3 rnA
(Phototransistor Operation)
On-State Collector Current
IC(on)
(Photodiode Operation)
VCB = 10V.IE = O. IF = 10mA 20 20 ~A
Off-State Collector Current

"IC(off)
(Phototransistor Operation)
VCE = 10 V. IB = O. IF =0 1 50 1 50 nA
Off-State Collector Current

*IC(off)
(Photodiode Operation)
VCB = 10 V. Ie = O. IF =0 0.1 20 0.1 20 nA
*VF Input Diode Static Forward Voltage IF - 10 rnA 1.25 1.5 1.25 1.5 V
'VCE(sat) Collector-Emitter Saturation Voltage IC =2 rnA. IB = O. IF = 50 rnA 0.25 0.5 0.25 0.5 V
Vin-out = ± 2.5 kV for 4N25.
± 1.5 kV for 4N26. 4N27. 10 12 10 11 10 12 0
'10 Input-ta-Output Internal resistance 10"
±0.5 kV for 4N28.
See Note 5
Cio Input-ta-Output Capacitance Vin-out - O. f - 1 MHz. See Note 5 1 1 pF
o
"0
r+ NOTE 5: These parameters are measured between both input diode leads shorted together and all the phototransistor leads shorted together.
o(')
switching characteristics at 25 °C free-air temperature
o
c: PARAMETER TEST CONDITIONS TYP UNIT
"0 VCC = 10 V. IB = O. IC(on) = 2 rnA.
m
...
tr
tf
Rise Time
Fall Time
Phototransistor
Operation RL = 1000. See Test Circuit A of Figure 1
2
2
~s
(II tr Rise Time Photodiode VCC - 10V. IE - O. IC(on) - 20~. 1

~s
tf Fall Time Operation RL = 1 kll. See Test Circuit B of Figure 1 1
(II
o
ar
r+
...o
Adjust amplitude of input pulse for:
IC(on) = 2 rnA (Test Circuit A) or
~ IC(on) = 20l"A (Test Circuit B)
INPUT
47 n 0-1 L
'rr---'--o OUTPUT
(See Note b)
OUTPUT L---~--o OUTPUT
RL=IOOn
(See Note b)
TEST CIRCUIT A TEST CIRCUIT B

PHOTOTRANSISTOR OPERATION VOLTAGE WAVEFORMS PHOTODIODE OPERATION
NOTES: a. The input waveform is supplied by a generator with the following characteristics: Zout:= 50 il, tr EO:; 15 ns, duty cycle ~ 1%,
'w= 1001"s.
b. The output waveform is monitored on an oscilloscope with the following characteristics: tr";;; 12 ns, Rin ~ 1 Mil, Cin .so; 20 pF.
FIGURE 1 - SWITCHING TIMES
3-20 TEXAS •
INSTRUMENTS
4N35, 4N36, 4N37
OPTOCOUPLERS
D2657 NOVEMBER 1981-REVISED APRIL 1

• Gallium Arsenide Diode Infrared Source • Plastic Dual-In-line Package
Optically Coupled to a Silicon N-P-N
Phototransistor • High-Speed Switching: tr = 7 fJ.S,
tf = 7 fJ.S Typical
• Typical Applications Include Remote
• High-Voltage Electrical Isolation ___ '_5 kV, Terminal Isolation, SCR and Triac Triggers,
2_5 kV, or 3_55 kV Rating Mechanical Relays, and Pulse Transformers
mechanical
The package consists of a gallium arsenide infrared-emitting diode and an n-p-n silicon phototransistor mounted on a
6-lead frame encapsulated within an electrically nonconductive plastic compound_ The case will withstand soldering
conditions_ Unit weight is approximately 0_52 grams_
NOTES,
Leads are within 0,13 mm (0.005 inch) radius of
true position (T.P.) with maximum material
condition and unit installed.
c. Terminal connections:
Infrared-emitting
1. Anode }
2. Cathode diode
3. No internal connection
4. Emitter }
5. Collector Phototranslstor
6. Base
FALLS WITHIN JEDEC MO-001AM DIMENSIONS

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
...
II)
Q)
*absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) Q.
4N35 4N36 4N37 ~
Input-to-Output Peak Voltage 18-ms half sine wave) . . . . . . . . . . . . . . . . . . . . . .
Input-to-Output Root-Mean-Square Voltage 18-ms half sine wave) ..... _ .......
.
.
3_55 kV 2.5 kV 1.5 kV
2.5 kV 1.75 kV 1.05 kV
o
(J
Collector-Base Voltage ......................................... . _70V • o
+-'
Collector-Emitter Voltage (See Note 1) ........... _. . . . . . . . . . . . . . . . . . . _30V • Q.
Emitter-Base Voltage ..........................................
Input-Diode Reverse Voltage . . . . . . . . . . . . . . . . . . . . _ . _ ... _ . . . . . . . . . .
.
.
..
..
7V
6V
•
• o
Input-Diode Forward Current: Continuous ........................... . _60mA •
Peak (1 fJ.S, 300 pps) ..................... . .. 3A •
Phototransistor Continuous Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . '--100mA_
Continuous Power Dissipation at (or below) 25°C Free-Air Temperature:
Infrared-Emitting Diode (See Note 2) .......................... . _100mW_
Phototransistor (See Note 3) ................................ . '--300mW_
Continuous Power Dissipation at (or below) 25°C Lead Temperature:
Infrared-Emitting Diode (See Note 4) .......................... . _100mW_
Phototransistor (See Note 5) ................................ . '--500mW-
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _-55°C to 150°C_
Operating Temperature Range .................................... . _-55°C to 100°C_
Lead Temperature 1,6 mm (1/16 inch) from Case for 10 Seconds ....... . _260°C •
NOTES: 1.
This value applies when the base-emitter diode is open-circuited.
Derate linearly to 100° C free-air temperatu re at the rate of 1.33 mWf c.
2.
3.
Derate linearly to 100° C free-air temperature at the rate of 4 mWf C.
4.
Derate linearly to 100°C lead temperature at the rate of 1.33 mWfC. Lead temperature is measured on the collector lead 0.8 mm
(1/32 inch) from the case.
5. Derate linearly to 100°C lead temperature at the rate of 6.7 mWf C.
·JEDEC registered data. This sheet contains all applicable registered data in effect at the time of publication.
currant as of publication date. Products conform to
specifications per the terms of TeX8S Instruments
:~~-::~~i~ai~:1~1.; ~!~~~~ti:,n :llo::~::::£:~~s not TEXAS • 3-21
INSTRUMENTS
4N35. 4N36. 4N37
OPTOCOUPLERS
electrical characteristics at 25°C free-air temperature

PARAMETER TEST CONDITIONS MIN TVP MAX UNIT
Collector~8ase IC= 100l'A, IE = 0,

70' V
VIBR)CBO Breakdown Voltage IF = 0
Collector·Emitter IC-10mA, IB = 0,
30" V
VIBR)CEO Breakdown Voltage IF = 0
Emitter-Base IE -100"A. IC = 0,
VIBR)EBO
r V
Breakdown Voltage IF =0
Input Diode Static
IR VR =6V 10' I'A
Reverse Current
110 Input-ta-Output Current V 10 - fated peak value, t=8ms 100 I'A
VCE= 10V, IF=10mA, 10"
IS = 0
VCE = 10V, IF -10 mA, 4'
IClon) On-5tate Collector Current mA
IS = 0, TA=-55·C
VCE = 10V, IF = 10 mA
4'
IS = 0, TA = 100·C
VCE-10V, IF - 0,
Eo
1 50 nA
IS = 0
ICloff) Off-State Collector Current
VCE - 30 V, IF = 0,
500" I'A
IB= 0, TA=100·C
Transistor Static
VCE=5V, IC = 10 mA,
hFE Forward Current 500
'0 IF =0
r+ Transfer Ratio
o IF= 10mA 0.8* 1,5"
(')
o VF
Input Diode Static IF= 10mA, TA = -55"C 0.9" 1.7*
V
C Forward Voltage IF - 10 mA,
'0 TA = 100·C 0.7" 1.4"
...
CD
(I) VCEI.at)
Collector-Em itter
Saturation Voltage
IC= 0.5 mA,
IS= 0
IF=10mA,
0.3" V
Input-ta-Output VIO - 500 V, See Note 6 n

10'"
(I) '10 Internal Resistance
o Input-to-Output VIO - 0, f= 1 MHz, 2.5- pF
i:i) Cia See Note 6
1
r+ Capacitance
o
C;; NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototranslstor leads shorted together.
- *switching characteristics at 25° C free-air temperature

TEST CONDITIONS MIN TVP MAX UNIT
PARAMETER
Turn-on time VCC=10V, IClon) = 2 mA, 10 1"

ton
RL=100n, See Figure 1
Turn-off time 10 1"
toff
JEOEC registered data.
3-22 TEXAS
INSTRUMENTS
-II
POST OFFI(:E BOX 655303 • DALLAS, TEXAS 75265
4N35. 4N36. 4N37
OPTOCOUPLERS

'Clon) " 2 rnA
INPUT
INPUT
o.-l
~ton
~I
toft _______
OUTPUT I I I I
I
(See Note b)
AL - 100 n
I OUTPUT I
I
90%
I
I
I
I
TEST CIRCUIT
VOLTAGE WAVEFORMS
NOTES a. The input waveform is supplied by a generator with the following characteristics: Zout = 50!l, tr ,-;: 15 ns, duty cycle"," 1%,
tw -" 100 j.1s
b. The output waveform is monitored on an oscilloscope with the following characteristics: tr <: 12 ns, Rin :;, , MS2, Cin ,-:;: 20 pF
FIGURE l-SWITCHING TIMES II

-.
C/)
o
+oJ
TYPICAL CHARACTERISTICS (t:J
'0
.!a
.
C/)
CI)
NORMALIZED TRANSISTOR STATIC FORWARO Q.
OFF-STATE COLLECTOR CURRENT CURRENT TRANSFER RATIO COLLECTOR CURRENT :::s
FREE-AIR TEMPERATURE
ON·STATE COLLECTOR CURRENT MODULATION FREQUENCY
o(.)
10 000 b 5 "v""---,,...,,rmTIr--.,,TTIm
10
~
4000 VCE lOV
IS - 0 ~
1.6 "V'--C-E-_C-
1.4 IF "'0
Vee- 1OV
IS 0
o
+oJ
- f- _.
~ fttlt----1+H:±J~~::I-ttHffi -~ Q.
, IF ~ 0 TA = 25"C
1000 ~
u
400
2
1.2 I-T_A_+0-t25_t"tiC
\
E
I
o
100 ~ 1,0 f-H-t+ilIlI""'-t-+tffiitt---+-t+tHffi ] HL - 1 k~!3;
40 8~ 0.8 V
0.4
.....
~
j 0.6 f-H-t+fttlt----1+I+I1itt---++++tffil ;3
0.2
0.1 11111
~ 0.4
~ RL - 475 S!
II-H
0.04
~
0.4 ~ 0.2 f-H-t+fttlt- Normalized to 1.0 0.02

at Ie'" 1 rnA
0.1 O~'''0-2::':0:-::30:-:470-C5'';;0:-::60~70~S~09;C:0c-:C'00 1
z 0.1 0.2 0.4 2 4 10 20 40 100
0,01
10 40 100 400 1000
(C(on)-On-State Collector Current-rnA fmod-Modulation Frequency-kHz
FIGURE 2 FIGURE 3 FIGURE 4
TEXAS
INSTRUMENTS
"-!J 3-23

4N35. 4N36. 4N37
OPTOCOUPLERS
COLLECTOR CURRENT
INPUT DIODE FORWARD vs
CONDUCTION CHARACTERISTICS INPUT·DIODE FORWARD CURRENT
160 100
Se~ Not~ 7 ~ VCE 10 V
140 II I 40
18 0
« 120
TA = 25°C
HI « 10
r,ll = 25°C /
E
.!.c 100 III E
.!.c 4
u
~
:;
80 I ~:J
U /
/
"E
~ 60
III I
0
t>
~
0.4
0
L.L.
I 40
TA = 70°C I / (5
u
I 0.1
// /
L.L. !:?
20 0.04
E ~~
TA = _55°C /
0
. 'J I 0.01
o 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2,0 0.1 0.4 4 10 40 100
0 VF-Forward Voltage-V IF-Forward Current-mA

"C FIGURE 5 FIGURE 6
r+
0
(')
0
s:::
"C COLLECTOR CURRENT RELATIVE ON·STATE COLLECTOR CURRENT
CD
... vs
vs
til COLLECTOR·EMITTER VOLTAGE
60 oU 1.6
til Ii b I It)
N
VCE=10V
0 \~ !8=
~ 1.4 18 = 0
iii"
r+
50 Cl
TA=25°C-
I- IF = 10 mA
« \~ See Note 7
...
0 10 1.2 r-See Note 8
til
E
.!.c 40
\ ;.>.
\~
~ .'"
:J
~
:;
u
0
t>
~
(5
u
30
rr
20 I--IF~ 15mA
o mA-f---'~~€
T I.
,0"
'~~/SSl
\0'
\''<>0
.-..
--
--
P.<!7) b-
--
--
>
.9
.~
.
Q;
a:
.
c
1.0
0.8
0.6
/
V r-----.- ........
I r--T -! I, ....'ON ~
!:? IF~10mA - :J 0.4
U
10 ~
IF- 5 mA ~ 0.2
~
o ;3 0
o 2 4 6 8 10 12 14 16 18 20 -75 -50 -25 0 25 50 75 100 125
VCE-Coliector·Emitter Voltage-V TA-Free·Air Temperature-oC
FIGURE 7 FIGURE 8
NOTES: 7. Pulse operation of input diode is required for operation beyond limits shown by dotted Ilnes.
8. These parameters were measured using pulse techniques. tw = 1 ms, duty cycle "'- 2%.
3-24 TEXAS " ,

INSTRUMENTS
POST OFFICE BOX 855303 • DAUAS. TeXAS 75265
4N47. 4N48. 4N49
OPTOCOUPLERS
02413, FEBRUARY 1978 ~ REVISED SEPTEMBER 1981

• JAN, JANTX, JANTXV Versions Available
• Very High Current Transfer Ratio ... 500% Typical (4N49)
• High-Speed Photodiode-Mode Operation
• High-Voltage Electrical Isolation ... 1-kV Rating
• Hermetically Sealed Package
description
This optocoupler features an improved current transfer ratio (CTR) at an input of one milliampere making
it ideal for coupling with isolation from low-output MaS and CMOS devices to power devices or other
systems. Typical applications include motor-speed controls, numeric systems, meters, and instrumentation.
*mechanical data
II
-
4.70{O.185I
3,94 (O.155)
M
-, r 1,O~~:W1
6 lEADS
rO.483 10.0191 D1A
0,406 (O.Ol6)
...o
(IJ
....«J
'.51 (Ot..
7,14(0.305)
NOTES:
~
a.
b.
~~
l..-12.7(O.500Ij
MIN
".4"!'3701
8,51 (0.335)
0IA
+---~'-4-
All linear dimensions are in millimeters and parenthetically in inches.

Leads having maximum diameter shall be within 0,18 mm (0.007 inches) of true position
r (5
-...
(IJ
( IJ
CI)
c..
:::s
o
....o"
relative to a maximum-width tab when measured in the gaging plane between 1,371 mm
(0.054 inches) and 1,397 mm (0.055 inches) below the seating plan~.
----------~------------~ 0..
o
Input-to-Output Voltage . ±1 kV
Collector-Emitter Voltage 40V
Collector-Base Voltage 45V
Emitter-Base Voltage . 7V
Input Diode Reverse Voltage . 2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (See Note 1) 40mA
Continuous Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Diode Current (See Note 2) ..........,............. . .1 A
Continuous Transistor Power Dissipation at (or below) 25°C Free·Air Temperature (See Note 3) 300mW
Operating Free-Air Temperature Range . . . . . . . . . . _55°C to 125°C
Storage Temperature Range . . . . . . ...,... -55°C to 125°C
Lead Temperature 1/16 Inch (1.6 mm) from Case for 10 Seconds 240°C
NOTES.: 1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/C.
2. This values applies for tw ~ 1 j.J.s, P R R , 300 pps.
3. Derate linearly to 125°C free-air temperature at the rate of 3 mW/C .
• JEDEC registered data. This data sheet contains all applicable JEDEC registered data in effect at the time of publication.
specifications per the terms of Taxas Instruments TEXAS •
:~~=~~i~ar::,~1i ~:~~~ti:: :1~O::~:::::t:~~S not INSTRUMENTS 3-25
4N41. 4N48. 4N49
OPTOCOUPLERS

4N47 4N48 4N49
PARAMETER TEST CONOITIONS UNIT
MIN TVP MAX MIN TVP MAX MIN TVP MAX
Collector-Base IC - 100 "A, IE = 0,
VI8RIC80 45 45 45 V
Collector-Emitter IC= 1 rnA, 18 = 0,
VI8RICEO 40 40 40 V
Emitter-Base Ie = 100 "A, IC = 0,
VI8RIESO 7 7 7 V
Input Diode Static
IR VR= 2V 100 100 100 "A
Reverse Current
VCE = 5 V, 18 = 0,
0.5 1 5 2 10
IF = 1 rnA
VCE - 5V, IS = 0,
On-State 0.7 1.4 2.B
IF = 2 rnA, TA=-55"C
ICloni Collector Current rnA
VCE = 5 V, 18 = 0,
(Phototransistor Model 0.5 1 2
IF=2mA, TA=l00"C
VCE - 5V, 18 - 0,
50 BO 90
IF = lOrnA, See Note 4
On-State
VCB=5V, IF = 10 rnA,
ICloni Collector Current 30 BO 30 BO 30 BO "A
IE = 0
IPholodiode Model
o
'C Oll-Slale
VeE-20V, IS = 0,
6 100 6 100 6 100 nA
..... ICloffi Collector Current
IF = 0
o VCE = 20V, IS = 0,
100
n (Phototransistor Model
If "" 0, TA ~ 100°C
4 4 100 4 100 "A
o Off-State
s::::: VCS = 20V, IE = 0,
'C ICloffi Collector Current
IF = 0
1 10 1 10 1 10 nA
...
CD
til
(Photodiode Mode)
Input Diode Static

IF = lOrnA, TA - -55"C 1 1.7 1 1.7 1 1.7
VF IF -lOrnA O.B 1.4 1.5 O.B 1.4 L5 O.B 1.4 1.5 V
Forward Voltage
u;- IF = lOrnA, TA = l00"C 0.7 1.3 0.7 1.3 0.7 1.3
o IC = 0.5 rnA, IS - 0,
0.3
iii"
.....
IF = 2 rnA
Collector-Emitter IC= 1 rnA. IS =0,
o
... VCElsati 0.3 V
-
til
Saturation Voltage
Input-to-Output
IF = 2 rnA
IC = 2mA,
IF = 2 rnA
IS = 0,
0.3
'io Yin-out = ± 1 kV. See Note 5 lO" 10 12 lOll 10 12 lOll 10 12 n

Internal Resistance
Input-to-Output Yin-out = 0, , = 1 MHz,
Cio 2.5 5 2.5 5 2.5 5 pF
switching characteristics at 25° C free=Bir temperature (See Figure 1)

4N47 4N48 4N49
MIN TVP MAX MIN TVP MAX MIN TVP MAX
°t, RIse TIme VCC= 10V, IFloni = 5 rnA, 10 20 10 20 15 25
Fall Time RL = lOOn, Test Circuit A 10 20 10 20 15 25
"'
°If
I, Rise Time VCC= 10V, IFloni = 5 rnA, 1 3 1 3 1 3
"'
If Fall Time RL=l00n, Test Circuit B 1 3 1 3 1 3
"'
",
NOTES: 4. This Parameter must be measured using pulse techniques, tw = 100 /oll, duty cycle <; 1 'MI.
5. These parameters .re measured between.1I the input dIode leads shorted together and all the phototransistor lead, shorted together .
• JE DEC registered data
3-26 TEXAS •
INSTRUMENTS
POST OFFICE BOX 665303. DALLAS, TeXAS 75265
4N47. 4N48. 4N49
OPTOCOUPlERS

IFlon) = 5 rnA
INPUT
INPUT 0-' L INPUT
OUTPUT
(See Note b)
R L .: 100 n OUTPUT OUTPUT

(See Note b)

NOTES: a. The input waveform is supplied bv a generator with the following characteristics: Zout = 50.n, t r ' 15 ns, duty cycle <:::. 1%. For
Test Circuit A, tw == 100 JJs. For Test Circuit B, tw = 1 IJ.s.
b. Waveforms ar. monitored on an oscilloscope with the following characteristics: tr ..;; 12 ns, Ain ~ 1 MH. Cin " 20 pF.
TYPICAL CHARACTERISTICS ...oUJ

...
CO
"0
10 -...
~
UJ
9 G)
TA = 25°C Q.
8
:::l
« o
E 7 (J
.!.
"
~
6 1 ...o
:;
u 5 I O
C-
"E
'"~ 4
I
0
U-
I
3 T
~
2
/
o /
o 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FIGURE 2
TEXAS . " 3-27

INSTRUMENTS
4N47, 4N48, 4N49
OPTOCOUPLERS
4N48 4N48
vs vs
80 10
IF = 10 mA 9mA 18 = 0 I
70 9 TA = 25°C
8mA IF =2 mA.......-
8 See Note 6
« «
E
60 f----h~r--t---=....r....",=----t--7 mA
E 7
~
.!.c
~
:;
!---+jt-,,,.c....-b,.....,=--+----+-6 mA
.!.c
~ 6 ...- ~
/'
--
::l
U U
f-----.rH-¥---::*"""'--t---t-5 mA
I~
k 5
S 8 I
"
~
f--IJY-+----=.-"'F---t---t--4 mA "
~ 4
"0
u
I
"0
u
I 3
_k-:
~ 3mA S:? I' IF = 1 mA
2
0.5~A-
2mA
1 mA IF
o
3 4 5 o 2 3 4 5
o VCE-Collector-Emitter Voltage-V VCE-Collector-Emitter Voltage-V
"C
r+
o(") FIGURE 3 FIGURE4
o 4N48 4N48
!:
"C COLLECTOR CURRENT COLLECTOR CURRENT
...
CD
en
vs
vs
3r---r---r---,---,----~ 6
o
o
18 = 0
TA = 25°C IF = 2 rnA
Q) 5
r+ «E
o
... .!.c
-
en
U
~
::l
4
0 3
IF = 0.8 mA tl
~.
"0
u 2
I
IF=0.6mA S:?
IF=0.4mA
IF=0_2mA
3 4 5
FIGURE 5 FIGURE 6
NOTE 6: This parameter was measured using pulse techniques. tw "" 100 fJ,s, dutY cycle = 1%.
3-2B
TEXAS ~
INSTRUMENTS
4N47, 4N48, 4N49
OPTOCOUPLERS
4N48 4N48
COLLECTOR CURRENT
vs
INPUT DIODE FORWARD CURRENT TRANSISTOR COLLECTOR CHARACTER ISTICS
100 16
70 VCE 5V IF ~ 0
IB 0 14 TA~25°C
40
TA 25°C <C See Note 6
1 20 See Note 6
,/ E
.L 12
t 10 / c
~
t 7 ~ 10
::J u
4
U
B
B8
" 2
V .!!!"
.!!! 0
o
u 1
u
I
6
6 0.7 !:d
4
&I
0.4
0.2 17 2
V
O. 1
0.1 0.2 0.4 0.7 1 2 4 7 10
0
0 2 3 4 5 - ...IoII
IF-Forward Current-mA
FIGURE 7
FIGURE 8 ...
CO
o
COLLECTOR CURRENT
COLLECTOR-BASE VOLTAGE
vs RELATIVE ON-STATE COLLECTOR CURRENT
vs
-...
.!!J.
I II
Q)
(PHOTODIODE OPERATION) FREE-AIR TEMPERATURE
80 C.
~
oU 1.6 :::l
70
IE ~
I
0, T A ~
°
25 C
I
IF ~
J
9 mA
IF 10mA
'"~
IF~ 1 mA i o
(,)
1.4
<C 60 IF 81mA ~
~ 1.2
I " ."\
IF~2mA~ ...c.
o
fc
50 IF )mA '"::J 1.0 ~ o
~ ~
U
::J
a 40 IF 61mA s 0.8
r\.
~
'">
~ 51mA
1) .~
.!!! IF 0.6
30 Q;
-
0
I":r--..
0::
u .1
I IF ~ 4 mA ~
!:d 20 ~ 0.4
IF ~ 3 mA ::J
U
10 IF - 2 mA B 0.2
IF -1 mA
" o
.!!!
2 3 4 5 ;3 -75 -50 -25 o 25 50 75 100 125
V CB-Collector-Base Voltage- V TA-Free-Air Temperature-°c
FIGURE 9 FIGURE 10
NOTE 6: This parameter was measured using pulse techniques. tw = 100 J..Ls, duty cycle = 1%.
TEXAS • 3-29
INSTRUMENTS
•
o
'C
r+
o
n
o
c:
'C
...
Ci"
tfj
tii
o
i»
r+
o...
-
tfj
3-30
4N47, 4N48, 4N49
JAN, JANTX, AND JANTXV PROCESSING
This processing applies only to optocouplers ordered under part numbers shown below:
JAN4N47,JANTX4N47,JANTXV4N47
TEST MIL-STD-750
JAN JANTX JANTXV
(PER MIL-S-19500/S4BI TEST METHOD
100% Processing
Internal Visual 2072 X

Storage: T A = 125°C, t = 24 hr 1032 X X
Temperature Cycle: - 55°C to 125°C, 10 cycles 1051 X X
Constant Acceleration: 20,000 G, Y 1 axis 2006 X X
High-Temperature Reverse Bias:
IF = 0, TA = 125°C. VCB = 36 V, t=48 hr 1039 X X
Power Burn-in: IF = 40 mA, Po = 275 ± 25 mW,
t = 168 hr 1039 X X
•-
Hermetic Seal, Fine 1071 Condo G or H X X
Hermetic Seal. Gross 1071 Condo Cor D X X
Monitored Thermal Shock Para. 4.2. I .1. ' X X X
External Visual 2071 X X
Product Acceptance
Group A: LTPD = 5 ...o
( I)
External Visual 2071 X X X ....CO

Electrical: T A = 25°C as needed X X X
Electrical: T A = 100°C as needed X X X '0
Electrical: T A = - 55°C
Group B-1: LTPD = 15

as needed X X X
-...
(I)
( I)
Solderability 2026 X X X Q)
Resistance to Solvents 1022 X X X c..
::l
Group B-2: LTPD = 10 o
Thermal Shock 1051 Condo B-1 X X X o
Hermetic Seal, Fine 1071 Condo G or H X X X o
....C-
Hermetic Seal, Gross 1071 Cond_ C or D X X X
Group B-3:
O
Isolation Voltage: VIO = 150 V, TA = 125°C,
t = 24, LTPD = 20 1016 X X X
Steady State Operating Life: t = 340 hr, LTPD = 5 1027 X X X
Group 8-4:
Decap, Internal Visual; Design Verification X X X
1 Device/O Failure 2075 X X X
Bond Strength LTPD = 20 IC = 01 2037 Condo A X X X
Group B-5: Not Applicable
Group B-6: LTPD = 7

High-Temperature Life (Nonoperating) 1032 X X X
t = 340 hr
'MIL-s- 19500/548
TEXAS . " 3-31

INSTRUMENlS
4N47, 4N48, 4N49
JAN, JANTX, AND JANTXV PROCESSING
TEST MIL-STD-750
JAN JANTX JANTXV
(PER MIL-S-19500/548) TEST METHOD
(Group C Tests are run on one lot every six months)
Group C-l: LTPD = 15

Physical Dimensions 2066 X X X
Group C-2: LTPD = 10

Thermal Shock (Glass Strain) 1056 Condo A X X X
Terminal Strength 2036 Condo E X X X
Hermetic Seal, Fine 1071 Condo G or H X X X
Hermetic Seal, Gross 1071 Condo C or D X X X
Moisture Resistance 1021 X X X
External Visual 2071 X X X

Shock: 1 500 G 2016 X X X
Vibration: 50 G 2056 X X X
Acceleration: 30000 G 2006 X X X

Salt Atmosphere 1041 X X X
o Group C-5: Not Applicable
....
't:I
o
Group C-6: A = 10
Steady State Operating Life 1026 X X X
"s::
o
't:I
...
CD
til
til
o
....Dr
...o
-
til
3-32 TEXAS •
INSTRUMENTS
6N135, 6N136, HCPL4502
OPTOCOUPLERS/OPTOISOLATORS
02918. JULY 1986-REVISED JULY 1989
• Compatible with TTL Inputs • High-Voltage Electrical

Insulation ... 3000 V DC Min
• High-Speed Switching ... 1 Mbitls Typ
• Open-Collector Output
• Bandwidth ... 2 MHz Typ
• UL Recognized ... File Number 65085
• High Common-Mode Transient
Immunity ... 1000 VII's Typ
description
These high-speed optocouplers are designed for use in analog or digital interface applications that require
high-voltage isolation between the input and output. Applications include line receivers that require high
common-mode transient immunity. and analog or logic circuits that require input-to-output electrical
isolation.
The 6N 135. 6N 136. and HCPL4502 optocouplers each consists of a light-emitting diode and an integrated
photon detector composed of a photo diode and an open-collector output transistor. Separate connections
are provided for the photodiode bias and the transistor collector output. This feature. which reduces the
transistor base-to-collector capacitance. results in speeds up to one hundred times that of a conventional
phototransistor optocoupler.
The 6N 135 is designed for TTL/CMOS. TTLILSTTL. and wide-band analog applications.
The 6N 136 and HCPL4502 are designed for high-speed TTLITTL applications. The HCPL4502 has no base
connection.
...oen
*mechanical data
..
C'a
"0
en
Terminal connections:
2. Anode light-emitting
-...
en
3. Cathode diode Q)
5. GND (Emitter)
6. Output
a.::::J
7. Base: 6N135. 6N136
Open: HCPL4502
8. Vce
t Detector
t
..
O
oo
o
C-
'l~7'87 10'3101~'l
rIf:~:: 11:'::::1
6.
,0 0
1 2001\1
0000
rI!-+I-I 1, 78 (0.070)
1,14 (0.045)
0.33 (O.0131~\.-
0,18 (0.007)
2.92 (0.1151 MIN
I I•• ~
'.40 (0.055) 2,79 (0.110)
0.76 (0.030) 2,29 10.090)
* JEDEC registered data. This data sheet contains aU applicable registered data in effect at the time of publication.
current as of 'publication date. Products conform to
these specifications p'er the terms of Texas
Instruments standard warranty. Production
TEXAS . . 3-33
processing does not necessarily include testing of all INSTRUMENTS
parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
6N135. 6N136. HCPL4502
schematic
ANODE (2) ..-_ _ _-..,;..(S"'-) VCC
~ffiOO']=!
(7) SASE: 6N135, 6N136
:- - - - - OPEN: HCPL4502
I
I

Supply and output voltage range, Vee and Vo ........................... -0.5 V to 15 V
Reverse input voltage ...................................................... " 5 V
Emitter-base reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 5 V
Peak input forward current (pulse duration = 1 ms, 50% duty cycle, see Note 1) . . . . . . . .. 50 mA
Peak transient input forward current (pulse duration 1 /lS, 300 Hz) . . . . . . . . . . . . . . . . . . . . . .. 1 A
Average forward input current (see Note 2) ..................................... 25 mA
E
Peak output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 16 mA
Average output current ..................................................... 8 mA
Base current ............................................................. 5 mA
Input power dissipation at (or below) 70°C free-air temperature (see Note 3) ............ 45 mW
o
"C
Output power dissipation at (or below) 70°C free-air temperature (see Note 4) ......... 100 mW
r+ Storage temperature range ......................................... - 55°C to 125°C
o
(')
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 55°C to 100°C
lead temperature 1,6 mm (1/16 inch) from case for 10 seconds. . . . . . . . . . . . . . . . . . . . .. 260°C
o
C • JEDEe registered data for 6N135 and 6N136
"C NOTES: 1. Derate linearly above 70°C free·air temperature at the rate of 1.67 mA/oe.
CD
... 2. Derate linearly above 70°C freeMair temperature at the rate of 0.83 mA/oe .
en 3. Derate linearly above 70°C free-air temperature at the rate of 1.50 mW/oe.
4. Derate linearly above 70°C freeMair temperature at the rate of 3.33 mW/oC.
Cii
o
Dr
r+
o
...
-
en
3-34 TEXAS •
INSTRUMENTS
6N135, 6N136, HCPL4502
electrical characteristics over operating free-air temperature range of 0 °C to 70°C (unless otherwise
noted)
6N135 6N136, HCPl4502
MIN TVPt MAX MIN TVPt MAX
'VF Input forward voltage IF ~ 16 mA, TA ~ 25°C 1.6 1.7 1.6 1.7 V
Temperature coefficient
"VF IF = 16 mA -loB -l.B mV/oC
of forward voltage
'V8R Input breakdown voltage IR = 10 pA, TA = 25°C 5 5 V
VCC = 4.5 V,
IOl = 1.1 mA 0.1 0.4
VOL Low-level output voltage IF = 16 mA, V
18 = 0 10l = 2.4 mA 0.1 0.4
IF ~ 0,
VCC ~ VO = 5.5 V 3 500 3 500 nA
'IOH High-level output current 18 = 0,
TA ~ 25°C VCC = Vo = 15 V 0.01 1 0.01 1 pA
VCC = 15V, Vo = 15V,

10H High-level output current 50 50 pA
IF = 0, 18 =0
Supply current,
VCC ~ 15V, 10 = 0,
'ICCH
high-level output
IF ~ 0, 18 = 0, 0.02 1 0.02 1 ~A
TA = 25°C
Supply current, VCC~15V, 10 = 0,
ICCH 2 2 ~A
ICCl
high-level output
Supply current,
low-level output
IF
IF
= 0,
VCC ~ 15V,
= 16 mA,
18
10
18
=0
= 0,
~ 0
40 40 ~A -
o
CI)
a-
Transistor +"
100
hFE forward current Vo ~ 5 V, 10 ~ 3 mA 100
16N136 only) ~
transfer ratio o
'CTR Current transfer ratio
VCC
IF ~
TA = 25°C,
~ 4.5 V,
16 mA,
Vo
18 ~
~
See Note 5
0,
0.4 V,
7% lB% 19% 24% % -
.!!!
CI)
a-
Q)
VCC = 4.5 V, Vo = 0.5 V,
CTR Current transfer ratio IF = 16 mA, 18 = 0, 5% 15% % c..
:::I
See Note 5
o
Input-output VIO ~ 500 V, TA = 25°C,
10 12 10 12 !l
o
'10
resistance See Note 6 o
+"
Input-output VIO = 3000 V, t ~ 5 s, C-
*110 insulation TA ~ 25°C, RH = 45%, 1 1 ~A O
leakage current See Note 6
Ci Input capacitance VF = 0, f ~ 1 MHz 60 60 pF
Input-output
Cio 1= 1 MHz, See Note 6 0.6 0.6 pF
capacitance
t All typical values are at T A ~ 25°C.

'JEDEC registered data lor 6N135 and 6N136
NOTES: 5. Current transfer ratio is defined as the ratio of output collector current 10 to the forward LED input current IF times 100%.
6. These parameters are measured between pins 2 and 3 shorted together and pins 5, 6, 7, and 8 shorted together.
TEXAS • 3-35
INSTRUMENTS
6N135, 6N136, HCPL4502
operating characteristics at Vee - 5 V. IF - 16 mA. TA

6N135 6N136, HCPL4502
PARAMETER TEST CONDITIONS
BW Bandwidth (- 3 dBI RL - 1000, See Note 7 2 2
NOTE 7: Bandwidth is the range of frequencies within which the ae output voltage is not more than 3 dB below the low-frequency value.
switching characteristics at Vee - 5 V. IF - 16 mA. TA - 25°e (unless otherwise noted)

6N135 6N136, HCPL4502
RL - 4.1 kO, See Note 8,
1.0 1.5
Propagation delay time, See Figure 1
*tpLH ~s
low-to-high-Ievel output RL=1.9kO, See Note 9,
0.6 0.8
See Figure 1
RL = 4.1 kll, See Note B,
0.7 1.5
*tPHL ~s
high-to-Iow-Ievel output RL = 1.9 kll, See Note 9,
O.S 0.8
E
See Figure 1
~VCM = 10 V, IF = 0,
RL = 4.1 kO, See Notes 8 and 1000
Common-mode input
dVCM (HI transient immunity, See Figure 2 10,
V/~s
o dt
high-level output
~VCM = 10 V, IF = 0,
'C RL = 1.9 kO, See Notes 9 and 10, -1000
r+ See Figure 2
o
(') ~VCM = 10 V, RL = 4.1 kO,
Common-mode input -1000
o dVCM (LI transient immunity. See Figure 2, See Notes 8 and 10,
c: dt ~VCM - 10 V, RL - 1.9 kO,
V/~s
'C low-level output -1000
See Figure 2, See Notes 9 and 10
CD
...
en * JEDEC registered data for SN 135 and 6N 136
NOTES: 8. The 4.1-kO load represents one LSTTL unit load of 0.36 rnA and a 6.1-kO pullup resistor.
en 9. The 1.9-kO load represents one TTL unit load of 1.S rnA and a 5.S-kO pullup resistor.
o 10. Common-mode transient immunity, high-level output, is the maximum rate of rise of the common-mode input voltage that
Q) does not cause the output voltage to drop below 2 V. Common-mode input transient immunity, low-level output, is the maximum
r+ rate of fall of the common-mode input voltage that does not cause the output voltage to rise above 0.8 V.
...o
-
en
3-36 TEXAS .."

INSTRUMENTS
POST OFFICE SOX 655303 • DALLAS, TEXAS 75265
6N135, 6N136, HCPL4502
PULSE
,------, ~--~r---'~-5V
GENERATOR
Zo = 50!l I -+
tr = 5 ns I -+
I
INPUT CU:..:;RR~E:.:;N:..:;T_ _~I'---J OUTPUT
MONITOR I
L ____ _ CL - 15pF
100 (J
ISee Note AI
L-----~-_4~--_t--GND
TEST CIRCUIT
INPUT
CURRENT ---1I - - - - IF
~I-----O
OUTPUT~:
!
VOLTAGE I 1.5 V I 1.5 V
5V
tpHL ~
I I
~ -+I
t-- VOL
...In
WAVEFORMS
14-tpLH
....o
CO
"0
NOTE A: CL includes probe and stray capacitance.
FIGURE 1. SWITCHING TEST CIRCUIT AND WAVEFORMS -...

.!!!
In
Q)
Q.
~
o
u
....o
Co
o
TEXAS " , 3-37

INSTRUMENTS
6N135, 6N136, HCPL4502
~--~""-5V
RL
..,----_OUTPUT
}-~ __""-GNO
TEST CIRCUIT
dVCM 8 V
--at = tr ortf
10V--7:
GENERATOR I 90% 90%~ t,=8nsTYP
tf=8nsTYP
oV 10% I I 10%
I I I I
--.I j4-t, tf-+l ....
o
~
r+
o OUTPUT---...~;;:: .,.-------5 V
(')
o SWITCH AT A: IF - 0
s::
~
...
(j)
til
OUTPUT---------~ VOL
SWITCH AT B: IF - 16 mA
VOLTAGE WAVEFORMS
til
o FIGURE 2. TRANSIENT IMMUNITY TEST CIRCUIT AND WAVEFORMS
cr
r+
...
o
~
3-38
TEXAS " ,
INSTRUMENTS
6N135, 6N134i, HCPL4502
INPUT DIODE FORWARD CURRENT
vs 6N135
FORWARD VOLTAGE CURRENT TRANSFER CHARACTERISTICS
20 12
18
TA - 25°C
I 11 VCC - 5 V
TA = 25°C
16 I 10
r. _IFI. 4J mA
«
E
I 14 I «
E
I
9
II L ,IF
IF - 35 mA
= 30 mA
.,
~
c
12 / E
8
I /
0
§
10 0
~
:;
7
6 -- --.i- II-/-
- -- -- -- -
-- --
"E .
~
8 / :;
S- 5 C'-
r
- -- 1: -- -- --
0
U-
I 6 / ::J
0
I
4
IF - 25mA
IF = 20 mA
.!:!-
4 / 9 3
IF=15mA
2
V 2
IF = 10 mA
./ o IF - 5mA
0
1.1 1.2 1.3 1.4 1.5 1.6 1.7 o 2 4 6 8 10 12 14 16 -...
I/)
FIGURE 3
YO-Output Voltage-V
FIGURE 4
...cao
'0
VJ
NORMALIZED CURRENT TRANSFER RATIO NORMALIZED CURRENT TRANSFER RATIO
vs vs
INPUT DIODE FORWARD CURRENT FREE-AIR TEMPERATURE ...VJ
Q)
1.2 1.1
--~N13~ i5.
VCC - 5 V
.,. ..,0
0
a:
1.1
1.0 - 6NI1361 I "....
.
a:
Vo - 0.4 V
IF = 16 mA f---6N136 •
::::s
o
(.)
~c
..
HCPL4502 r;
~c
1.0
V v....... ......... HCPL4502
...c.
o
~~,
0.9
~ ~6N135
t!:
~
c
0.8
0.7 .It
I!!
l-
E 0.9
/ I
./
o
'\
\:
~ / ~
I
:; 0.6
I :; I
0
£1 0
.
"C
.~
0.5
//
.
"C
N
0.8 ,
I
I
iii 0.4 ~
E E
(; 0.3 (;
z VCC = 5 V z 0.7
I 0.2 I
a: Vo = 0.4 V a:
I- I-
0 0.1 TA = 25°C 0
Normalized to IF = 16 mA
o 0.6
-60 -40 -20 0 20 40 60 80 100
1 2 4 7 10 20 40 70 100
IF-Forward Current-mA TA-Free-Air Temperature- °C
FIGURE 5 FIGURE 6
TEXAS
INSTRUMENTS
'li1 3-39
6N135. 6N136. HCPL4502
HIGH-LEVEL OUTPUT CURRENT DIFFERENTIAL CURRENT TRANSFER RATIO
vs vs
FREE-AIR TEMPERATURE INPUT DIODE QUIESCENT FORWARD CURRENT
10.000 ~ 30.----=~=----.------~----~
EVCC - 5V I
4000
«c Vo - 5V
IF - 0
~
a: 25
I 1000 /
E ~
!! 400 III
;; C
~ 20e--~4=""'~+----t--~~,....i
0
:; 100 I /
c. E
:; 40 !!
;; 15~---+---+----t--~-=,....i
0 o
.
Gi
>
-'
.i:.
10
4
/ iii
~ 10 1----+---+---+--------1
'"I
J: £
•
/ C
:I: I 51-----+-----+------+------~
9 0.4 U
IV
./ a:I- OL-_ _- L_ _ _ _ _ _L __ _
0.1 o
~ ~
0 -75 -50 -25 0 25 50 75 100 125 o 5 10 15 20

"C TA -Free-Air Ternperature- DC IF-Quiescent Input Current-rnA
r+
0 FIGURE 7 FIGURE 8
(")
0
I: NORMALIZED FREQUENCY RESPONSE PROPAGATION DELAY TIME
"C
vs vs
...CD
--
LOAD RESISTANCE FREE-AIR TEMPERATURE
en
-
o 1.2
r-- r- III VCC = 5 V
~~
iii "- IF = 16 rnA
.....
.I 1.1
~PLH
0 -5 RL = 4.1 kll for 6N135
i» ~ \'\ ~ RL = 1.9 kll for 6N136
100~ ~
III
r+
...0en
"C
I .
>-
1.0
Y
- C
0
"
II>
.
C.
"
a:
-10
-15
RL -
RL = 220ll J
RL = 470 Il...../
~ \
Gi
Q
c
..,
0
IV
0.9
O.S
....".-
Y
./
V/
tPHY / ' /
~
RL = 1 kll
'"
IV 6N135
\
-
"C C.
"
.!:!
iii
E
0
-20
£I
-'
:I:
0.7
.........
0.6 _6N136 tpHL
.......
..,,?
,/
"" -
2
-25
e- HCPL4502 . ~
IF - 16 rnA :i: 0.5 I :::::P'"
TA = 25 DC e--' ~ 6N136
HCPL4502
tpLH
'\
-30 I I I 0.4
0.1 0.2 0.4 0.7 1 2 4 7 10 -60 -40 -20 0 20 40 60 SO 100
f-Frequency-MHz T A - Free-Air Ternperature- DC
FIGURE 9 FIGURE 10
3-40 TEXAS ~
INSTRUMENTS
6N137
OPTOCOUPLER/OPTOISOlATOR
02919, JULY 1986
• Gallium Arsenide Phosphide LED Optically Coupled to

Integrated Circuit Detector
• Compatible with TTL and LSTTL Inputs

• Low Input Current Required to Turn Output On ... 5 mA Max
• High-Voltage Electrical Insulation, .. 3000 V DC Min
• High-Speed Switching . .. 75 ns Max
• Plastic Dual-In-line Package
• UL Recognized . .. File Number 65085
description
The 6N 137 optocoupler is designed for use in high-speed digital interfacing applications that require high-
voltage isolation between the input and output. Applications include line receivers, microprocessors or
computer interface, digital programming of floating power supplies, motors, and other control systems,
The 6N 137 high-speed optocoupler consists of a GaAsP light-emitting diode and an integrated light detector
composed of a photodiode, a high-gain amplifier, and a Schottky-clamped open-collector output transistor.
An input diode forward current of 5 milliamperes will switch the output transistor low, providing an on-
state drive current of 13 milliamperes (eight 1 ,6-milliampere TTL loads). A TTL-compatible enable input
is provided for applications that require output-transistor gating.
The 6N137 is characterized for operation over the temperature range of 0 DC to 70 DC. -..
en
o
* mechanical data ....
CO
"0
en
.
2. Anode } Light-emitting
3. Cathode diode en
5. GND .!!?
6. Output
7. Enable
8. Vee
I Oetecto,
c.
::::l
o
o
....o
c.
o
'i.~7'B7 10.3101~'i. 0)000
r~::~ 11:::::1 J I!-+I-"
If r 78 (O.070)
0240 0,89 {D.035} MINI I 1.14 (0.0451
6.,01 1\1
r-'
4,70 (D.1a5) MAX
II
H -......--,--.---,....,.----"1--I
0.33 (O.0131~~
O,1S (0.007)
2,92 (0.' 15) MIN
I I• •1.
1,40 (0.055) 2,79 (0.110)
D.76 (0.030) 2,29 (0.0901
·JEDEC registered data. This data sheet contains all applicable registered data in effect at the time of publication.
specifications per the terms of TexIs Instruments TEXAS • 3-41
~!~~:~~i~at::I~~e ~!:~~~ti:; :1~o::::~:t:::'~S not INSTRUMENTS
6N137
OPTOCOUPLER/OPTOISOLATOR
FUNCTION TABLE logic diagram (positive logic)

INPUT
IFlon)
IFlolI)
X
ENABLE
H
X
L
OUTPUT
L
H
H
ANOOEJ
CATHODE
(21
(31 --
ENABLE
*absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7 V
Reverse input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 5 V
Enable input voltage (not to exceed VCC by more than 500 mV) . . . . . . . . . . . . . . . . . . . . . . 5.5 V
Output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7 V
Peak forward input current (:$ 1 ms duration) (TI-guaranteed value) . . . . . . . . . . . . . . . . .. 40 mA
(JEDEC-registered value) . . . . . . . . . . . . . .. 20 mA
Average forward input current (TI-guaranteed value) ... . . . . . . . . . . . . . . . . . . . . . . . . . .. 20 mA
(JEDEC-registered value) . . . . . . . . . . . . . . . . . . . . . . . . . . .. 10 mA
Output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 mA
o
"C
Output power dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 85 mW
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55 °C to 125°C
r+ Operating free-air temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ooC to 70°C
o(') Lead temperature 1,6 mm 11/16 inch) from case for 10 seconds .................... " 260°C
o
s:: * JEDEC registered data
"C
CD
... recommended operating conditions
en
MIN NOM MAX UNIT
Ui vee Output supply voltage Isee Note 11 4.5 5 5.5 V

o VIHIENI High-level enable input voltage Isee Note 21 2 Vee V
g;- VIL{EN) Low-level enable input voltage 0 0.8 V
r+
...
o IFlon) Input forward current to turn output on 6.3 15 mA
-
en IFloffi
IOL
TA
Input forward current to turn output off
Low~level (on·5tate) output current
Operating free~air temperature
0
0
250
13
70
~A
mA
De
NOTES: 1. All voltage values are with respect to GND {pin 51.
2. No external pullup is required at the enable input; an open circuit will establish the high level.
3-42 TEXAS -1.!1

INSTRUMENTS
6N137
electrical characteristics over recommended operating free-air temperature range (unless otherwise
noted)
PARAMETER TEST CONDITIONS MIN Typt MAX UNIT
'VF Input forward voltage IF ~ 10 rnA, TA ~
25'C 1.6 1.75 V
aVF Temperature coefficient of forward voltage IF ~ 10 rnA - 1.8 mV/oC
'VBR Input reverse breakdown voltage IR - 10.A, TA - 25'C 5 V
VCC - 5.5 V, V(ENI 2 V,
'VOL Low-level output voltage 0.23 0.6 V
IF ~ 5 rnA, 10L ~ 13 rnA
VCC ~ 5.5 V, Vo - 5.5 V,
'IOH High-level output current 250 "A
V(ENI ~ 2 V, IF ~ 250.A
IIH(ENI High-level enable input current VCC ~ 5.5 V, V(ENI ~ 2 V -0.2 rnA
'1ILiENI Low-level enable input current VCC ~ 5.5 V, V(ENI ~ 0.5 V -0.5 -2 mA
VCC 5.5 V, ~
V(ENI - 0.5 V,
'ICCH Supply current, high-level output 10 15 mA
IF ~ 0
VCC ~ 5.5 V, V(ENI ~ 0.5 V,
'ICCL Supply current, low-level output 13 18 mA
IF ~ 10 rnA
VIO ~ 3000 V, t ~ 5 s,
'110 Input-output insulation leakage current TA ~ 25'C, RH = 45%, 1 "A
See Note 1
VIO ~ 500 V, TA ~
25°C,
flO Input-output resistance 10 12 0
See Note 1
Ci Input capacitance VF ~ 0, f 1 MHz 60 pF
...oen
~
f ~ 1 MHz, TA ~ 25°C,
Cio Input-output capacitance 0.6 pF
See Note 1
+-'
ctI
* JEDEC registered data (5
t All typical values are at Vee = 5 V, TA = 25°C. en
NOTE1:' These parameters are measured between pins 2 and 3 shorted together and pins 5, 6, 7, and 8 shorted together.
switching characteristics at Vee = 5 V, TA = 25 De

-...
en
PARAMETER
~
TEST CONDITIONS MIN TYP MAX UNIT C.
Propagation delay time, low-to-high-Ievel IF ~ 7.5 rnA, RL ~ 350 n, ::l
'tPLH
output, from LED input CL ~ 15 pF, See Figure 1
42 75 ns o
(.)
Propagation delay time, high-to-Iow level IF ~ 7.5 rnA, RL ~ 350 n, o
'tPHL 42 75 ns
output, from LED input CL ~ 15 pF, See Figure 1 +-'
C.
tPLH(ENI
Propagation delay time,
output, from enable
low~to-high level IF
CL
~
~
7.5 mA,
15 pF,
RL - 350
See Figure 2
n,
40 ns o
Propagation delay time, high-to-Iow-Ievel IF ~ 7.5 rnA, RL ~ 350 n,
tpHL(ENI 25 ns
output, from enable CL ~ 15 pF, See Figure 2
IF ~ 7.5mA, RL - 350 n,
tr Rise time 20 ns
CL ~ 15 pF
IF ~ 7.5 mA, RL ~ 350 n,
tf Fall time 30 ns
CL ~ 15 pF
~VCM ~ 10 V, IF - 0,
dVCM (HI Common-mode input transient immunity,
RL ~ 350 n, 50 V/.s
dt high-level output
See Note 2 and Figure 3
~VCM ~ -10 V, IF ~ 5 rnA,
Common-mode input transient immunity,
dVCM ILl RL ~ 350 n, -150 V/~s
dt low-level output

NOTE 2: Common-mode input transient immunity, high-level output, is the maximum rate of rise of the common-mode input voltage that
does not cause the output voltage to drop below 2 V. Common-mode input transient, low-level output, is the maximum rate
of fall of the common-mode input voltage that does not cause the output voltage to rise above 0.8 v.
TEXAS ~ 3-43
INSTRUMENTS
6N137
IF--+
PULSE
----,
r--'~------------------ __ ~~SV
GENERATOR
Zo - SO!l
r --.
tr - 5 ns
I -+ : RL = 3S0!l
':'
I
I I
INPUT
MONITOR L ___ _ OUTPUT
47 !l OPEN CL 0.01 pF
(See Note Al
TEST CIRCUIT
INPUT
MONITOR
1 \---3somvuF = 7.SmAI
- - - - - - - - - 1 7 S m V U F = 3.7SmAI
Eo OUTPUT ~
I
-+I tpHL 14-
1 _ _ _ _ _ _ I ___
I .
--.{ tpLH 14-
I
0 V
VOH
1 . SV
"C ----VOL
r+
o VOLTAGE WAVEFORMS
n
o FIGURE 1. tpLH AND tpHL FROM LED INPUT TEST CIRCUIT AND WAVEFORMS
c
"C
IF - 7.S mA--+
CD
...
en ~ -----,
.--.--------------------.-~~SV
en ~::: I
I RL - 3S0!l
o ':' I I
iii" I
r+
o
ENABLE
L ___ _ ____ ..JI
... MONITOR---------.....
-
OUTPUT
en PULSE CL 0.01 pF
GENERATOR (See Note Al
Zo - SO!l
tr - 5 ns
TEST CIRCUIT
- ----3V
ENABLE
INPUT'-i------\------1.SV
I I 0 V
tPHL(ENI-l4---+l ~tPLH(ENI
~
I VOH
OUTPUT I ______ I ---1.SV
----VOL
VOLTAGE WAVEFORMS
FIGURE 2. tPLH(EN) AND tPHL(EN) FROM ENABLE TEST CIRCUIT AND WAVEFORMS
NOTE A: CL is approximately 15 pF, which includes probe and stray wiring capacitances.
3·44 TEXAS . "

INSTRUMENTS
6N137
r--.--------------------__
-----, ~~5V
r -+
I
I -+
I
I OUTPUT
L 0.011'F
OPEN
GENERATOR
TEST CIRCUIT
dVCM 8 V
10V--l: dt - t,o,tf
GENERATOR 90% 90%~
OV
10% I
I
--+I
I
I
",t,
I 10%
I I
tf .... 14-
t,=8nsTYP
tf-8nsTYP
II
...
en
OUTPUT----_~c-
SWITCH AT A: IF - 0
,.--------5 V ....o
C'CS
'0
OUTPUT----------~VOL
SWITCH AT B: IF = 5 rnA
-...
~
en
CI)
VOLTAGE WAVEFORMS
Q.
FIGURE 3. TRANSIENT IMMUNITY TEST CIRCUIT AND WAVEFORMS ::::J
o
(.)
TYPICAL APPLICATION INFORMATION ....o
Q.
A ceramic capacitor (0.01 "F to 0.1 "F) should be connected between pins 8 and 5 to stabilize the high-
gain amplifier. The total lead length between the capacitor and the optocoupler should not exceed 20 mm
o
(0.8 inches). Failure to provide a bypass capacitor may result in impaired switching characteristics.
,,_- ____ LGND BUS (BACK)
"
t::==!==t:== v------'
~
/l-----, ENABLE
(IF USED)
NC "'1_ _.ii-t~v ""~=====:::!) OUTPUT 1
FIGURE 4. RECOMMENDED PRINTED CIRCUIT BOARD LAYOUT
TEXAS ~ 3-45
INSTRUMENTS
6N137
INPUT DIODE FORWARD CURRENT LOW-LEVEL OUTPUT VOLTAGE
vs vs
FORWARD VOLTAGE FREE-AIR TEMPERATURE
20 0.4 ~~~~~-,---.--~-~-.,.----,
18
TA = 25°e
I >
Vee = 5V
+-+-+--+---11---1
16 I I
!!I,
VIENI - 2 V
IF-5mA
IOL - 13 rnA
or:(
T 14
I l!l 0.3 j.......:~t----t--+-+-+-+-+-----t
~
E
~ 12
\1 ~
::J
S-
::J
u 10 a 0.2 ~-I---1--+--+---+--+--+---I
8 I ~
!l
6
/ ~
4 / ~
...
0.1 1---11--+--+--+--+--+--~~
E
o
2
o
1.1 1.2 1.3 1.4
./
1.5
II
1.6 1.7
~
Ol-~_~_-L_-L_~_~_I-~
o 10 20 30 40 50 60 70 80
'C VF-Forward Voltage-V TA-Free-Air Temperature- °e
r+
o FIGURE 6
n FIGURE 5
o
c::: HIGH-LEVEL OUTPUT CURRENT
'C vs
CD
... FREE-AIR TEMPERATURE
en 4
Vee = 5 V
Cii or:(
c Vo - 5.5 V
o I IF - 250/LA
Q) E
r+ 3
~
...
o ::J
-
en U
;
0
~
::J
...J::...
Ii
>
.2'
J:
I
J: r-- 1"-- I-
9
o
o 10 20 30 40 50 60 70 80
TA-Free-Air Temperature- °e
FIGURE 7
3-46 TEXAS •
INSTRUMENTS
6N137
PROPAGATION DELAY TIME FROM LED INPUT
vs
PULSE FORWARD CURRENT
100
II)
VCC ~ 5 V
'I 90 RL = 350 II
CD TA - 25°C
E 80
j::
~ 70
~I: 60
o t~ f -
'il 50 .......
-
g> ~
e 40 I':::::::- f..-- tpHL
D.. I--
.:.. 30
J:
e- 20
:i:
~ 10
o
4 6 8 10 12 14 16
-...
UI
IF-Pulse Forward Current-rnA
FIGURE 8
....«to
'0
vs
LOAD RESISTANCE
-...
.!!2
UI
Q)
100
II)
VCC = 5 V Q.
'I 90 IF = 7.5 rnA ::::I
o
CD TA - 25°C ./
E 80 (.)
j::
~ 70 ./
V ....oc..
Gi
C
60
tpLH V o
I:
o
.;::
co 50
/
Cl
co -~ tpHL
~ 40
D..
.:.. 30
J:
e- 20
:i:
...J 10
e-
o
o 2 3 4 5
RL -Load Resistance-kll
FIGURE 9
TEXAS ~ 3-47
INSTRUMENTS
E
o
'0
.-+
oC')
o
r::
'0
~
~
VI
3-48
6N138. 6N139
D3012, JULY 1986
• Compatible with TTL Inputs

• High Current Transfer Ratio ... 800% Typ at IF 0.5 rnA
• High-Speed Switching ... 100 kbit/s Typ
• High Common-Mode Transient Immunity, .. 500 VII's Typ
• High-Voltage Electrical Insulation ... 3000 V DC Min
• High Output Current Rating of 60 rnA
• Ul Recognized ... File Number 65085
description
These devices are useful where large common-mode input signals exist, and in applications that require
high-voltage isolation between circuits. Applications include line receivers, telephone ring detectors, power
line monitors, high-voltage status indicators, and circuits that require isolation between input and output.
The 6N 138 and 6N 139 high-gain optocouplers each consists of a GaAsP light-emitting diode and an
integrated high-gain photon detector composed of a photodiode and a split-Darlington output stage. The
Vee and output terminals may be tied together to achieve conventional photodarlington operation. A
separate base access terminal allows gain-bandwidth adjustments.
The 6N 138 is designed for use primarily in TTL applications. An LED input current of 1.6 milliamperes
and a current-transfer ratio of 300% from 0 DC to 70 DC allows operation with one TTL load input and
one TTL load output utilizing a 2.2-kO pullup resistor. -...
(IJ
The 6N 139 is designed for use in CMOS, LSTTL, or other low-power applications. This device has a minimum
current-transfer ratio of 400% for only 0.5 milliampere input current over an operating temperature range
...o
~
of oDe to 70 De. o
-...
(IJ
*mechanical data (IJ
Terminal connections: ~
1. No internal connection C.
2. Anode }
Light-emitting
::l
3. Cathode
diode
o
..."
5. GND (Emitter\
6. Output
7. Base t Detector o
8. Vee c.
o
'i~7'87 10'31DI~'i 0000
rIf:,::6,10 ,''0240',1
:::::1
0.33 to.0131~\.-
0,18 (0.007\
* JEDEC registered data. This data sheet contains all applicable registered data in effect at the time of publication.
standard warranty. Production p'rocassing does not
TEXAS • 3-49
necessarily include testing ~f all parameters. INSTRUMENTS
6N138. 6N139
schematic
r-____--------~18~1 VCC
ANODEJI21
r-____--'-17:.,:.1 BASE
~
~
161 OUTPUT
131
CATHODE
* absolute maximum ratings at 25 DC free-air temperature (unless otherwise noted)

Supply and output voltage range, Vee and VO: 6N138 ...................... -0.5 V to 7 V
6N139 . . . . . . . . . . . . . . . . . . . . . . . -0.5 to 18 V
Emitter-base reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V
Peak input forward current (pulse duration = 1 ms, 50% duty cycle) . . . . . . . . . . . . . . . . .. 40 mA
Peak transient input forward current (pulse duration :5 1 Ils, 300 pps) . . . . . . . . . . . . . . . . . . .. 1 A
Average forward input current at (or below) 50 0 e free-air temperature (see Note 1) . . . . . .. 20 mA
Output current at (or below) 25 DC free-air temperature (see Note 2) . . . . . . . . . . . . . . . . . .. 60 mA
Input power dissipation at (or below) 50 0 e free-air temperature (see Note 3) . . . . . . . . . . .. 35 mW
o
'0
Output power dissipation at (or below) 25 De free-air temperature (see Note 4) ......... 100 mW
r+ Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55°C to 125°e
o Operating temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 0 DC to 100 °e
(")
o Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds ...................... 260 De
c: 1. Derate linearly above 50°C free-air temperature at a rate of 0.4 mA/oC.
'0 NOTES:
CD
... 2. Derate linearly above 25°C free-air temperature at a rate of 0.8 mA/oC.
3. Derate linearly above 50°C free-air temperature at a rate of 0.7 mW/oC .
en 4. Derate linearly above 25°C free-air temperature at a rate of 1.33 mW/oC.
*JEDEC registered data.
en
o
Dr
r+
...
o
-
en
3-50
TEXAS . "
INSTRUMENTS
6N138,6N139
electrical characteristics over operating free-air temperature range of 0 °C to 70 °C (unless otherwise

noted)
6N138 6N139
MIN Typt MAX MIN Typt MAX
'VF Input forward voltage IF = 1.6 rnA. TA = 25°C 1.5 1.7 1.5 1.7 V
"VF IF = 1.6 rnA -1.8 -1.8 mV/oC
of forward voltage
'VaR Input breakdown voltage IR=10~A. TA = 25°C 5 5 V
VCC - 4.5 V. IF - 1.6 rnA.
0.1 0.4
10l = 4.8 rnA. la = 0
VCC 4.5 V. IF 1.6 rnA.
0.1 0.4
10l = 6.4 rnA. la = 0
VCC - 4.5 V. IF - 5 rnA.
0.1 0.4
10l = 15 rnA. la = 0
VCC - 4.5 V. IF - 12mA.
0.2 0.4
10l = 24 rnA. la = 0
VCC - 7 V. Vo - 7 V.
0.1 250
IF = O. la = 0
'IOH High-level output current ~A
VCC - 18 V. Vo - 18V.
0.05 100
IF = O. la = 0
'ICCH
Supply current,
high-level output
VCC - 5 V.
IF = O.
Vo open.
la = 0
10 10 nA
-o...
( I)
ICCl
Supply current,
low-level output
VCC 5 V.
IF = 1.6 rnA.
VCC - 4.5 V.
Vo open.
la = 0
Vo - 0.4 V.
0.2 0.2 rnA
...
l!!
IF = 0.5 rnA. la = O. 400% 1650% o
'CTR Current transfer ratio
See Note 5
VCC - 4.5 V.
IF = 1.6 rnA.
Vo - 0.4 V.
la = O. 300% 1300% 500% 1400%
-...
(I)
( I)
(\)
See Note 5
'10 Input-output resistance VIO = 500 V. See Note 6 10 12 10 12 n c..
:::l
Input-output insulation
VIO 3000 V. t 5 s. o
(.)
'110 TA = 25°C. RH = 45%. 1 1 ~A
Ci
leakage current
Input capacitance
See Note 6
VF = O. f = 1 MHz 60 60 pF
...
o
Q.
Cio Input-output capacitance f - 1 MHz. See Note 6 0.6 0.6 pF o
tAli typical values are at VCC = 5 V. TA = 25°C. unless otherwise noted.
TEXAS • 3-51
INSTRUMENTS
6N138, 6N139
OPTOCOUPLERS/OPTOISOLA10RS
*switching characteristics at Vee" 5 V. TA = 25°e

6N138 6N139
IF = 1.6 rnA, RL = 2.2 kit
2 10
See Figure 1
Propagation delay time, IF = 0.5 rnA, RL = 4.7 kll,
*tPHL 4 25 ~s
high-to-Iow level output See Figure 1
IF = 12 rnA, RL = 270O,
0.3 1
See Figure 1
IF = 1.6 rnA, RL = 2.2 kO,
4 35
See Figure 1
Propagation delay time. IF = 0.5 rnA, RL = 4.7 kO,
*tpLH 10 60 ~s
low-to-high-Ievel output See Figure 1
IF-12mA, RL - 270O,
3.5 7
See Figure 1
Common-mode input VCM = 10 Vp-p, IF = 0,
dVCM (H) Transient immunity, RL = 2.2 kO, See Notes 7 and 8, 500 500 V/~s
dt
high-level output See Figure 2
Common-mode input
dVCM VCM = Vp-p, RL = 2.2 kll,
--ILl transient immunity, -500 -500 V/~s
dt See Figure 2, See Notes 7 and 8
low-level output
o
...o
"C * JEOEC registered data
NOTES: 7. Common-mode transient immunity, high-level output, is the maximum rate of rise of the common-mode input voltage that
does not cause the output voltage to drop below 2 V. Common-mode input transient immunity, low-level output, is the maximum
(")
rate of faU of the common-mode input voltage that does not cause the output voltage to rise above 0.8 V.
o 8. In applications where dV/dt may exceed 50,000 Vlp.s (such as static discharge) a series resistor, Ree, should be included
s:::: to protect the detector Ie from destructively high surge currents. The recommended value is:
"C
...
CD 1
til RCC ~ 0.1 5 IF ImAI kll
Ui
o
...o
Q)
...
-til
TEXAS •
3-52
INSTRUMENTS
POST OFfiCE BOX 655303 • DALLAS. TEXAS 75265
6N138,6N139
PULSE
r ---------,
IF ....
SV
GENERATOR
Zo - SO!! I -+
tr ,., 5 ns 1 -+
I
INPUT CURRENT _ _ _ _ -.---.;1---' .,,---'-..-..-- OUTPUT
MONITOR 1
CL = lS pF
100 !! IL _____ _ ISee Note AI
t--------+--~--~--GND
= ' - - - - - - - - OPEN
TEST CIRCUIT
INPUT
CURRENT ---1, . . - - - - - - - ,'-___
- - - - IF
0
I I
OUTPUT~:
I
VOLTAGE
!I 1.S V 1.S V
SV
...oen
tpHL ~
I I
~ -+I
t--
14-
tpLH
VOL
...
CO
(5
en
-...
WAVEFORMS
NOTE A: CL includes probe and stray capacitances.

en
FIGURE 1. SWITCHING TEST CIRCUIT AND WAVEFORMS
~
C.
:::I
o
..."oc.
o
TEXAS . " 3-53

INSTRUMENTS
6N138, 6N139
RCC
r---~~----~'-~~5V
(See Note AI
.,--i-....--OUTPUT
r---~--'--------GND
GENERATOR ~--------------BASE
TEST CIRCUIT
E
10V--7: 90
GENERATOR 1 % 90%h dVCM = B V
o 10% I I 10% dt tr or tf
V I I I I t, = 8 ns TYP
-+I I4-t, tf-+! 14-
tf - 8 ns TYP
o
....
'0
o OUTPUT---_~.
~--------5 V
(')
SWITCH AT A: IF - 0
o
c::
'0
CD OUTPUT----------~ VOL
...
en SWITCH AT B: IF = 1.6 rnA
VOLTAGE WAVEFORMS
iii
o NOTE A: In applications where dV/dt may exceed 50,000 V/p.s (such as static discharge) a series resistor, Ree, should be included to
iir
.... protect the detector Ie from destructively high surge currents. The recommended value is:
o... 1
en Ree = 0.15 IF (mAl kll
FIGURE 2. TRANSIENT IMMUNITY TEST CIRCUIT AND WAVEFORMS
3-54 TEXAS . "

INSTRUMENlS
6N138.6N139
6N138 6N139
CURRENT TRANSFER CHARACTERISTICS CURRENT TRANSFER CHARACTERISTICS
80 80,----,-----,-----,----,-----,
VCC=15V
TA = 25°C r - - IF - 5 1rnA_ 70 -t-+--+ IF - 5 rnA
70
rr IF = 4.5 rnA IF = 4 rnA

IF = 4 rnA IF - 3 rnA
« «
E
.!.c:
60
50
....--. ~ - E
~
I
c:
60
50
~ 'IF
!'! ~ ~
:; j ~ 3.5 rnA :;
u 40
--
U 40
~
::J
C.
:; 30 Ii ::::::= IF = 3 rnA
IF = 2.5 rnA
~
::J
So
::J 30
IF = 2.5 rnA
IF = 2 rnA
J~
0 IF = 2 rnA 0
I I IF = 1.5 rnA
9 20 IF = 1.5 rnA 9
,~
IF = 1 rnA
IF - 1 rnA
10
o If-
o 0.5
IF - 0.5 rnA
1.5 2 2.5 0.5
IF = 0.5 rnA
1.5 2 2.5
II
-
VO-Output Voltage-V VO-Output Voltage-V ...
f I)
FIGURE 3 FIGURE 4 ...nso

6N138 6N139 "0
CURRENT TRANSFER RATIO
vs
CURRENT TRANSFER RATIO
vs
-...
~
f I)
1600 1700 ~
1500 VCC = 5 V
111111
1600 VCC = 5 V c.
:::s
?F.
1400 Vo = 0.4 V T~ 1=1 k~lb ?F.
1500
IJ
'/
1,\
Vo = 0.4 V
o
u
~
0
I
1300
1200 ~
TA = OOC
~ TA - 70 OC- -
I
..,0
1400
1300
'I
Ii /
1\.'\
'\' ...c.
o
II ,....
1100 «I
a: 1200
a:
1000 '\ 1100
TA = 70°C 1:\ o
.! ~c: 1000 IH
-TA-25°C ~
to
c:
~
900
800 I .
.:: 900
Iff TA - 0 °C
'\
"
I-
700 800
E I E '/ ~
!'! 600 TA = ooc !'! 700
:; 500
II :; 600
u u
I 400 i l ~I I 500
_ ° ~1
~
a: 300 >=TA = ooc_ a:
I- I- 400
U pTA = 250C TA - 70 C r-"' ~ U ~
200
100
t:: TA = 700~±!1TA
= 25°C
300
200
....;::
o f- ,", '11111 111111 I 100

0.1 0.2 0.4 0.7 1 2 4 7 10 20 40 0.1 0.2 0.4 0.7 1 2 4 7 10 20 40
IF-Input Diode Forward Current-rnA IF-Input Diode Forward Current-rnA
FIGURE 5 FIGURE 6
. TEXAS'" 3-55
INSTRUMENTS
6N138.6N139
6N138 6N139
OUTPUT CURRENT OUTPUT CURRENT
vs vs
INPUT DIODE FORWARD CURRENT INPUT DIODE FORWARD CURRENT
100 100
5V
70 VCC 70 VCC 5V
Vo = 0.4 V
40 40 Vo - 0.4 V
«
E
20
/'
~
«
E
20 ,
I 10 I 10
E
!!
:;
7
4
.
E
§
7
4
u u
; 2 ; 2 ~ TA = 70°C
~
e-
::J
0 1 ~ So
::J
0 1
r-TA = 25°C
TA OOC
I 0.7 I 0.7
~r
9 ~FTA = 70°C 9
Eo
'C
0.4
0.2
0.1
~:A=-O~~oC
0.1 0.2 0.4

1111111
2 4 710 20 40 100
0.4
0.2
0.1
0.1 0.2 0.4 2 4 710 20 40 100
r+ IF-Input Diode Forward Current-rnA
o IF-Input Diode Forward Current-rnA
C')
o FIGURE 7 FIGURE 8
s:::
'C 6N138
CD
... INPUT DIODE FORWARD CURRENT PROPAGATION DELAY TIMES
-
til vs
FORWARD VOLTAGE
vs
--
t il 20 6
o
/
IF = 1.6 rnA
ji) TA = 25 1o C
RL ~ 2.2 kll
r+ ~
...
o
«
.. 5
"-
~H
-
til E 15
.I
V
E
U
I
~::J
.
10
II ~
j::
.
>-
0;
4
3
/"
V
./'
-
Q
"E
Ll.
I
~
0
o!:!- 5
/
/ c
.,.
0
.
Cl
Q.
0
0:
2
- --
-
~
~ tpHL
0 / o
1.3 1.4 1.5 1.6 1.7 o 10 20 30 40 50 60 70 80
VF-Forward Voltage-V T A -Free-Air Ternperature- °c
FIGURE 9 FIGURE 10
3-56 TEXAS •
INSTRUMENTS
6N138.6N139
6N139 6N139
PROPAGATION DELAY TIMES PROPAGATION DELAY TIMES
vs . vs
FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE
16 I I 6
IF = 0.5 rnA IF = 12 rnA
RL = 270!J
..,. 14 RL = 4.7 k!J
,.
II) 5
...
I 12
V ~ ---- I
E ~ 4
~ 10 ---tPLH
f-- I--
-
~
>.
a; 8
~
......-- .
>
~ 3
~ ~t;-
C
c: c: V
..,.
0 o
---
6
.
'"
Co
4
__ I-- ~
tpHL
.~
..
Co
2
~
c.. I--- i=== ~
c..
2
tpHL
o o
o 10 20 30 40 50 60 70 80 o '0 20 30 40 50 60 70 80 ...
I/)
TA-Free-Air Ternperature- °C TA-Free-Air Ternperature- °C ...o

Ctl
FIGURE 11 FIGURE 12 '0
-...
.!!!
I /)
Q)
c..
::::I
o
(.)
...
o
Co
o
TEXAS
INSTRUMENTS
-1!1 3-57

o
'C
r+
o(')
o
r:::
'C
CD
...
en
iii
o
6i
r+
o...
-
en
3-58
HCPL2502
OPTOCOUPLER/OPTDlSOLATOR
D2963, NDVEMBER 1986
• Compatible with TTL Inputs

• High-Speed Switching .. , 1 Mbit/s Typ
• Narrow CTR Range
• High Common-Mode Transient Immunity ... 1000 V/p.s Typ
• UL Recognized ... File Number E65085
• Directly Interchangeable with Hewlett Packard HCPL2502
description
common-mode transient immunity, and analog or logic circuits that require input-to-output electrical
isolation.
The HCPL2502 optocoupler consists of a light-emitting diode and an integrated photon detector composed
of a photodiode and an open-collector output transistor. Separate connections are provided for the
photodiode bias and the transistor collector output. This feature, which reduces the transistor base-to-
collector capacitance, results in speeds up to one hundred times that of a conventional phototransistor -...r.n
optocoupler.
The HCPL2502 is designed for high-speed TTL/TTL applications where matched or known CTR is desired.
....oCtI
CTR is 15 to 22% at IF = 16 rnA. (5
mechanical data
-...
r.n
r.n
~
9'91 (0.3701
9,40 10'390'~
1. No internal connection ~
2. Anode
3. Cathode
} light-emitting
diode
0000 c.
4. No internal connection :::s
5. GND (Emitter) o
6. Output
7. Base
8. Vee
! Detector
CJ
....o
Q
o
<t~7'87 10'310'~<t 0000
r :~:~ 11:'::::1 1!----t+-~8 (0.070)
r I 1,14 (0.045)
If 6"01
0240
'"\1
2,92 10.115) MIN

0.33 10.01 3) ~\.-
0,' ~ (0.007) 2,79 (0.110)
2,29 (0.090)
currenl as of publication date. Products conform to
:~~~~:~~i~ai~:1~1~ ~~:~~~ti:r :I~O::~:::::'::S~S not
TEXAS
INSTRUMENTS
"'IJ 3-59
HCPL2502
schematic
ANODE 12) r-_ _ _ _..:.IS...:.) VCC
r -_ _---'-17...;.) BASE
"'"OO,]=! 16) OUTPUT
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)

Supply and output voltage range, Vee and Vo ...................... - 0.5 V to 15 V
Reverse input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 5 V
Emitter-base reverse voltage 5 V
Peak input forward current (pulse duration = 1 ms, 50% duty cycle, see Note 1) . . . . . . . .. 50 mA
Peak transient input forward current (pulse duration 1 P.s, 300 Hz) . . . . . . . . . . .. .... 1 A
Average forward input current (see Note 2) 25 mA
Peak output current . . . . . . . . . . . . . . . . . . . . . . . . 16 mA
Average output current ... . . . . . . . . . . 8 mA
Base current ...... . 5 mA
Input power dissipation at (or below) 70 DC free-air temperature (see Note 3) . . . . . 45 mW
o
"C Output power dissipation at (or below) 70 DC free-air temperature (see Note 4) . .. 100 mW
.-+ Operating free-air temperature range . . .. . . . . . . . . . . . . . . . . . - 55 DC to 100 DC
o Storage temperature range .......... . . . . . . . . . - 55 DC to 125 DC
'o"
s::::
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds. . . . . . . . . . . . . . .. 260 DC
~ NOTES: 1. Derate linearly above 70°C free-air temperature at the rate of 1.67 mAl DC.
...CD
/J)
2. Derate linearly above 70 0 e free-air temperature at the rate of 0.83 mA/oC.
e
3. Derate linearly above 70 D free-air temperature at the rate of 1.50 mW/oC.
4. Derate linearly above 70 0 e free-air temperature at the rate of 3.33 mW/oC.
/J)
2..
!l)
.-+
...
o
/J)
3-60 TEXAS •
INSTRUMENTS
HCPL2502
electrical characteristics over operating free-air temperature range of 0 °e to 70 °e (unless otherwise

noted)
VF Input forward voltage IF ~
16 mA, TA ~ 25°C 1 .6 1.7 V
"VF IF ~
16 mA -1.8 mV/oC
of forward voltage
VSR Input breakdown voltage IR ~ 10 "A, TA ~ 25°C 5 V
Vce ~ 4.5 V, IF ~ 16 mA,
Val Low-level output voltage
10l ~ 2.4 mA, IS ~ ° 0.1 0.4 V
10H High-level output current

IF - 0,
IS ~ 0, I Vce ~
va ~
5.5 V 3 500 nA
TA ~
VCC ~ 15 V,
25°e I Vce
Va ~
~
Va
15 V,
~ 15 V 0.01 1 "A
10H High-level output current

IF ~ 0, IS ~ ° 50 "A
VCC ~ 15 V, 10 ~ 0,
Supply current,
ICCH IF ~ 0, IS ~ 0, 0.02 1 "A
high-level output
TA ~ 25°C
Supply current, Vec ~ 15 V, 10 ~ 0,
ICCH
high-level output
Supply current,
IF ~
15 V,
0, IS ~
10 ~ 0,
° 2 "A
Vee ~
~ °
leel 40 "A
low-level output IF ~ 16 mA, IS
hFE
Transistor
forward current Va ~ 5 V, 10 ~ 3 mA 100
...o
(fl
transfer ratio +-'

Vee ~ 4.5 V, Va ~ 0.4 V,
CO
CTR Current transfer ratio IF ~ 16 mA, IS ~ 0, 15% 22% "0
-...
(fl
TA ~ 25°e, See Note 5
Input-output Via ~ 500 V, TA ~ 25°C, (fl
'10 10 12 0
resistance See Note 6
(l)
Input-output Via ~ 3000 V, t = 5 s,
110 insulation TA ~ 25°e, RH = 45%, 1 "A
C.
:::I
leakage current See Note 6 o(J
Ci Input capacitance VF ~ 0, f ~ 1 MHz 60 pF
Input-output
o
+-'
Cio f ~ 1 MHz, See Note 6 0.6 pF
capacitance C.
t All typical values are at T A = 25°C.

o
operating characteristics at Vee 5 V, IF = 16 rnA, TA = 25°e

PARAMETER TEST CONDITIONS MIN TYP MAX
SW Sandwidth ( - 3 dSI Rl ~ 1000, See Note 7
NOTE 7: Bandwidth is the range of frequencies within which the ac output voltage is not more than 3 dB below the low-frequency value.
TEXAS • 3-61
INSTRUMENTS
HCPL25D2
switching characteristics at Vee - 5 V, IF 16 rnA, TA 25°e (unless otherwise noted)

Propagation delay time, RL = 1.9 kll. See Note 8,
tpLH 0.6 0.8 ~s
Propagation delay time, RL = 1.9 kll, See Note 8,
tpHL 0.6 0.8 ~s
high~to-Iow-Ievel output See Figure 1
Ll.VCM = 10 V, IF = 0,
dVCM IHI Common-mode input transient RL = 1.9 kll, See Notes 8 and 9, - 1000 V/~s
dt immunity, high-level output
See Figure 2
dVCM ILl Common-mode input transient Ll.VCM = -10 V, IF = 16 rnA, RL = 1.9 kll,
-1000 V/~s
dt immunity, low-level output See Figure 2, See Notes 8 and 9
NOTES: 8. The 1 .9-kll load represents one TTL unit load of 1.6 rnA and a 5.6-kll pullup resistor.
9. Common-mode transient immunity, high-level output, is the maximum rate of rise of the common-mode input voltage that
rate of fall of the common-mode input voltage that does not cause the output voltage to rise above 0.8 V.
•
r-----...,
o PULSE
GENERATOR
5V
'C
r+ Zo = 50 Il I -+
o tr = 5 ns I -+
C')
o I
I: INPUT CU:..:;RRc:.:E",N:..:;T_~"-'f-I----, OUTPUT
'C MONITOR I
...(1) 100 Il
L ____ _ CL = 15 pF
UI ISee Note AI
~--------~~---'------~~---GND
UI
o TEST CIRCUIT
ii)
r+
o... CURRENT
~~T
--.JI -- - I
F
UI ~I-----0
OUTPUT~:
I
.!
VOLTAGE I 1.5 V 1.5 V
5V
I I +----VOL
tpHl ~ k- -+I :.- tPLH
WAVEFORMS
3-62 TEXAS ~
INSTRUMENTS
POST OFFICE BOX 655303 • DAllAS, TEXAS 75265
HCPL2502
IF+.r - - - - - - ,
5V
I
-+ I
-+
~-I-_OUTPUT
~~~""'-GND
TEST CIRCUIT
dVCM 8V
----at - tr or tf
10V--7: 90
GENERATOR 1 % 90%~
oV 10% I I 10%
I I
I I
--+I ... t r tf-+! ~
-.
I I)
o
OUTPUT---"",",--"
_------5 V
....
«l
SWITCH AT A: IF - 0 rnA '0
OUTPUT r.:::-:::..- VOL

-..
~
I I)
SWITCH AT 8: IF - 16 rnA Q)
VOLTAGE WAVEFORMS
Q.
:::::I
FIGURE 2. TRANSIENT IMMUNITY TEST CIRCUIT AND WAVEFORMS o
to)
o
....Q.
o
TEXAS .." 3-63

INSTRUMENTS
HCPL2502
vs
20 10
18
TA = 25°C
I 9
Vee = 5 V
TA = 25°C
1T 1T
I -- f--- ~--+-~~~-
ct
16
I ct
8
--- -- IF 35 rnA
- ,,- =
E 14 E
I I
7
/." .- -
E
i!!
:;
12 II E
~
6
.- I~ = ~O.~~
IF = 25 rnA
It ....
U 10
::l
U 5 [,.- -- -- --j---I-
IF - 20 mA-
"E
!'" 8 / :;
5- 4
LL
0
I
6 / ::l
0
I 3
IF - 15 rnA
~
4 / 9
2
IF = 10 rnA
2
V IF = 5mA
o ./ o I I
o 1.1 1.2 1.3 1.4 1.5 1.6 1.7
o 2 4 6 8 10 12 14 16
...
"C
o
VF-Forward Voltage-V VO-Output Voltage-V
FIGURE 4
(') FIGURE 3
o
c:: NORMALIZED CURRENT TRANSFER RATIO NORMALIZED CURRENT TRANSFER RATIO
"C
vs vs
...
(j)
th 1.2
1.1
T [
a: 1.1 Vee - 5 V
th I-
u
a:
I-
/""
- ............. Vo = 0.4 V
o 1.0 I--... ~ 1.0
...oor a:..,'"
I IF = 16 rnA
0
0.9
".- " ..,o / """-
"" '""
/
a:'"
... OJ ~ 0.8 0.9
-
th
~
I:
'"
0.7
0.6
I' ~
I-
..
I:
i!! 0.8
~
I: ~
I:
"\
l'! 0.5 l'!
:;
u
-0
0.4 8 0.7
-0
=a"
0.3
N
Vee - 5 V "
.!::!
E 0.2 Vo = 0.4 V ~ 0.6
(; (;
z 0.1 TA = 25°C
Normalized to IF = 16 rnA
z
o 0.5
1 2 4 7 10 20 40 70 100 -60 -40 -20 0 20 40 60 80 100
IF-Forward Current-rnA TA-Free-Air Temperature- °e
FIGURE 5 FIGURE 6
3-64 TEXAS . "

INSTRUMENTS
HCPL2502
vs vs
10.000 'if. 30
Vee = 5 V I Vee = 5 V
oct
4000
Vo - 5 V .,
.o Vo - 0.4 V
"11000 IF - 0 / ~ 25 TA = 25 De
E
!:! 400
!S
u
5
So
::l
0
100
40
I /
.
.:!
I:
~
I-
~
"~
::l
20
15
(
/-
- ~ r-.....
-...;;;
u
Qi /
.,> 10
.,
.iii
-'
.i:. 4 ! 10
:r:'" V :::"
i5
I
::r:: I 5
p 0.4
0.1
-75 -50 -25
V
0 25
TA-Free-Air Temperature- De
50 75 100 125
U
.
a:-
I-
U o
o 5 10 15 20
II
...
en
IF-Quiescent Input eurrent-mA
o
....
FIGURE 7 FIGURE 8
CO
"0
en
NORMALIZED FREQUENCY RESPONSE
vs
PROPAGATION DELAY TIME
vs
-...
0
-5
- LOAD RESISTANCE
I-I-
~~
.
os.
I 1.1
CI)
E
1.2
Vee = 5 V
IF = 16 mA
RL = 1.9kO
FREE-AIR TEMPERATU-RE
~
en
C.
::J
o
~ ~ ~ ~r-. .
m j:: 1.0 (.)
>-
....o
"C
."
I
-10 RL - 1000
oJ 1\
Qj
c.
~
c 0.9
0".
c.
RL - 220
RL = 470 0 ---./ "o
.~ 0.8 /
o
"
II:
"C
-15
RL=lkO ----" .'"c. tpHL ""\ 17
.~ 1\ £. 0.7 J:Y
/
iii -20
E
0
I
:r! 0.6
_14 I-- I--
z e- ~ --,,~p l'---tpLH
-25 i
IF = 16 mA ~ 0.5
........-1/
TA ~ 2~D~
-30 0.4
0.1 0.2 0.4 0.7 1 2 4 7 10 -60 -40 -20 0 20 40 60 80 100
f-Frequency-MHz T A - Free-Air Temperature - De
FIGURE 9 FIGURE 10
TEXAS • 3-65
INSTRUMENTS
E
o
"0
r+
o
(')
o
r:::
"0
...
(j)
CII
CII
o
i5)
r+
o...
CII
3-66
HCPL2530. HCPL2531
D3115, APRIL 1988
• Compatible with TTL Inputs • High-Voltage Electrical

• High-Speed Switching . .. 1 Mbit/s Typ
• UL Recognized . .. File Number 65085
• High Common-Mode Transient
Immunity . .. 1000 V/p.s Typ
description
common-mode transient immunity, and analog or logic circuits that require input-to-output electrical
isolation,
Each HCPL2530 and HCPL3531 optocoupler consists of two light-emitting diodes and two integrated photon
detectors. Each detector is composed of a photodiode and an open-collector output transistor. Separate
connections are provided for the photodiode bias and the transistor collector output, This feature, which
reduces the transistor base-to-collector capacitance, results in speeds up to one hundred times that of
•
a conventional phototransistor optocoupler.
The HCPL2530 is designed for TTL/CMOS, TTL/LSTTL, and wide-band analog applications.
The HCPL2531 is designed for high-speed TTL/TTL applications.
mechanical data
...
I/)
...
o
~
CD ~~~
Terminal connections: 9,40 (0.370)
1. Anode 1 ~
2. Cathode 1
3. Cathode 2
CD 0 0) o
I/)
4. Anode 2
5. GND (Emittersl
6. Output 2
7. Output 1
8. Vee
...
I/)
CI)
0..
::J
o
o
'i.~7'87 10'3101~'i. 0000 ...
o
r:::~ ,1:::::1 c.
o
If 6"010'2401,1 rI!----+I-1,·14
1,18 (0.0701
(0.045)
II
~_SEATING PLANE
GAUGE PLANE --Jf---,.-i-
10,76 (0.030)
0,00 (0.0001
2,92 (0.115) MIN

0.33 (0.013) ~\.-
0,18 (0.007) 2.79(0.1'0)
2,29 (0.090)
PRODUCTION DATA documants contain information Copyright © 1988, Texas Instruments Incorporated
specifications par the tarms of TaxBs Instrumants
TEXAS • 3-67
:!'~~:~~i~ai~:'~'i ~!::~:: :.~O:::::~:~~ not INSTRUMENTS
POST OFFICE BOX 655303 • DALLAS, TEXAS 7526F
HCPL2530, HCPL2531
schematic
r -__-.~--------------------~18~) VCC
ANODE,:]I')
--+
--+
. - -_ _ _ _ _ _ _ _.:.;17:..:.,.) OUTPUT'
(2)
CATHODE'
ANODE 2:](4)
--+
--+
/"____4-_______1;.:6.;..) OUTPUT 2
CATHODE 2 (3)
~____~______~15~) GND
absolute maximum ratings at 25 DC free-air temperature (unless otherwise noted)

Supply and output voltage range, Vee and Vo ........................... -0.5 V to 15 V
o Reverse input voltage (each channel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 5 V
...o
'0 Peak input forward current (each channel) (pulse duration = 1 ms, 50% duty cycle, see Note 1) 50 mA
Peak transient input forward current (each channel) (pulse duration = 1 ILs, f = 300 Hz) . . . . .. 1 A
n Average forward input current (each channel) (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . .. 25 mA
o
c Peak output current (each channel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 16 mA
'0 Average output current (each channel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . .. 8 mA
...CD e
Input power dissipation at (or below) 70 0 free-air temperature
(each channel) (see Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 45 mW
-o
til
e
Output power dissipation at (or below) 70 0 free-air temperature
t il (each channel) (see Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 35 mW
Storage temperature range ......................................... - 55 °e to 125°e
...i»o Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 55 °e to 100 °e
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds. . . . . . . . . . . . . . . . . . . . .. 260 0 e
-...
til NOTES: 1. Derate linearly above 70°C free-air temperature at the rate of 1.67 mA/oC.
2. Derate linearly above 70 0 e free-air temperature at the rate of 0.83 mA/oC.
3-68 TEXAS ~
INSTRUMENTS
POST OFFICE BOX 656303 • DALlAS. TEXAS 75265
HCPL253D. HCPL2531
noted)
HCPL2530 HCPL2531
MIN Typt MAX MIN TYpt MAX
VF Input forward voltage IF ~ 16 rnA, TA ~ 25°e 1.6 1.7 1.6 1.7 V
Temperature coefficient mV/oe
VF IF ~ 16 rnA -1.8 -1.8
of forward voltage
VBR Input breakdown voltage IR ~ 10 pA, TA ~ 25°e 5 5 V
Vee - 4.5 V, 10L - 1.1 rnA 0.1 0.5
VOL low·Jevel output voltage V
IF ~ 16 rnA 10L ~ 2.4 rnA 0.1 0.5
IFI ~ IF2 ~ 00 Vee ~ Val ~
3 500 3 500 nA
High·level TA ~ 25°e V02 ~ 5.5 V
10H
output current Vee - VOl - V02 - 15V,
50 50 pA
IFI ~ IF2 ~o
Supply current, Vee ~ 15 V, 101 = 102 = 0, 4 4 pA
leeH
high· level output IFI ~ IF2 ~ 0
Supply current, Vee ~ 15 V, 101 = 102 = 0,
leeL 80 80 pA
low-level output IFI ~ IF2 ~ 16mA
Vee = 4.5 V, Va ~ 0.5 V,
eTR Current transfer ratio IF ~ 16 rnA, TA ~ 25°e, 7% 18% 19% 24%
See Note 5
eTR Current transfer ratio

Vee
IF =
~ 4.5 V,
16 rnA,
Va = 0.5 V,
See Note 5
5% 15%
-...
en
'10
Input-output
resistance
Input-output
Via
See Note 6
Via
=
~
500 V,
3000 V,
TA
t ~
~
5 s,
25°e,
10 12 10 12 n ...
o
ca
(5
insulation TA ~ 25°e, RH ~ 45%, 1 1 pA
110 en
ei
~eakage
~nput
current
capacitance
See Note 6
VF = 0, f ~ 1 MHz 60 60 pF
-...
en
Input-output
eio f ~ 1 MHz, See Note 6 0.6 0.6 pF Q)
capacitance
Input-input Vii ~ 500 V, TA ~ 25°e
c..
::I
qj 1011 1011 n
resistance See Note 7 o
(J
'ii
Input-input
insulation
leakage current
Vii
TA
~
See Note 7
500 V,
25°e,
t
Rh
~ 55,
~ 45%, 0.005 0.005 pA ...
o
C-
Input-input f = 1 MHz, TA = 25°e, O
eii 0.25 0.25 pF
capacitance See Note 7
t All typical values are at T A = 25°e.

7. These parameters are measured between pins 1 and 2 shorted together and pins 3 and 4 shorted together.
TEXAS • 3-69
INSTRUMENTS
HCPL2530. HCPL2531
operating characteristics at Vee - 5 V, IF - 16 rnA, TA - 25°e

HCPL2530 HCPL2531
BW Bandwidth (- 3 dBI RL - 100 II, See Note 8 2 2
NOTE 7: Bandwidth is the range of frequencies within which the ae output voltage is not more than 3 dB below the low-frequency value.
switching characteristics at Vee = 5 V, IF = 16 rnA, TA = 25°e (unless otherwise noted)

HCPL2530 HCPL2531
RL ~ 4.1 kll, See Note 9,
1.0 1.5
tpLH ~s
low-to-high-Ievel output RL ~ 1.9 kll, See Note 10,
0.6 0.8
See Figure 1
RL ~ 4.1 kll, See Note 9,
0.7 1.5
tPHL ~s
high-to-Iow-Ievel output RL ~ 1.9k!l, See Note 10,
0.6 0.8
•
See Figure 1
aVCM ~ 10 V, IF ~ 0,
RL ~ 4.1 kll, See Notes 9 and 10, 1000
Common-mode input
dVCM (HI transient immunity, See Figure 2
V/~s
dt aVCM ~ 10 V, IF ~ 0,
o
'C
high-level output
RL ~ 1.9 kll,
See Figure 2
See Notes 10 and 11, 1000
ro+
o Common-mode input
aVCM ~ 10 V, RL ~ 4.1 kll,
-1000
C') See Figure 2, See Notes 9 and 11,
o dVCM (LI transient immunity.
dt aVCM ~ 10 V, RL~1.9kll,
V/~s
I: low-level output -1000
'C See Figure 2, See Notes 10 and 11
CD
... NOTES: 9. The 4.1-kllload represents one LSTTL unit load 01 0.36 mA and a 6.1-kll pullup resistor.
en 10. The 1.9-kll load represents one TTL unit load 01 1.6 mA and a 5.6-kll pullup resistor.
11. Common-mode transient immunity, high-level output, is the maximum rate of rise of the common-mode input voltage that
fir does not cause the output voltage to drop below 2 V. Common-mode input transient immunity, low-level output, is the maximum
o rate of fall of the common-mode input voltage that does not cause the output voltage to rise above 0.8 V.
Q)
ro+
o
...
-
en
3-70 TEXAS . "

INSTRUMENTS
HCPL2530. HCPL2531
PULSE
r-----.., SV
GENERATOR
Zo - SO {J I -+
tr "'" 5 ns I -+
I
INPUT CU,-,RR:.cE:..N_T_ _HII~ OUTPUT
MONITOR
100 !!
L ____ _ CL - lSpF
ISee Note A)
L-----~-~-------GND
TEST CIRCUIT (EACH CHANNEL)
INPUT
CURRENT --..J L-_ _ _ 0 V
I I
OUTPUT~:
I
VOLTAGE
!I 1.S V 1.S V
SV
I I -I---VOL
tpHL ~ 14- -+I :.- tpLH ...oen
WAVEFORMS ....Ctl
"0
-...
en
en
CI)
C.
:::l
o
(.)
o
....c.
o
TEXAS .." 3-71

INSTRUMENTS
HCPL2530. HCPL2531
RL
./"....L.......-OUTPUT
J---"'---4I~-GND
TEST CIRCUIT (EACH CHANNELl
dVCM _ 8 V
~ - trortf
10 V - - 7 :
GENERATOR 90% 90%~ I, - 8 ns TYP
If - 8 ns TYP
10% : I 10%
oV I I I I
-+I J4-t, tf~ If-
o
"C OUTPUT ~ 5V
r+
o SWITCH AT A: IF - 0 rnA
C')
o
c: OUTPUT ~VOL
"C
SWITCH AT B: IF - 16 rnA
CD
"'"
(fj VOLTAGE WAVEFORMS

iii
o
Qj"
r+
o
-"'"
(fj
3-72 TEXAS ~
INSTRUMENTS
HCPL2530. HCPL2531

vs HCPL2530
20 12
18
TA = 25°C
I 11 Vee = 5 V -
I
TA .= 25°C
I 1
<l:
E
16
14 I <l:
E
10
9
._..-
r
II /
'--IF
,IF
IF
=
=
=
40 mA
35 mA
30 mA
I
~
c:
~ 12 II E
~
I 8
7
/ /
u
:;
10
::l
U 6 - - L kt..:;r --- -- -
- --
/-- - -- -- --
-~
"C
c;;
~ 8 1 - - - - 1--._.._- ~.
/ '5
E- 5
~
- 1= - -- --
U-
<;
I 6 I---.~ 1--- / ::l
0
I
4 IF
IF
25 mA
20 mA
~
4
/ 9 3
IF 15 mA
2
II 2
f--.-.- I--
IF 10 mA
o 7 o
IF - 5 mA
1.1 1.2 1.3 1.4· 1.5 1.6 1.7 o 2 4 6 8 10 12 14

Vo - Output Voltage -- V
VF-forward Voltage-V
FIGURE 3 FIGURE 4 -... (/)
NORMALIZED CURRENT TRANSFER RATIO NORMALIZED CURRENT TRANSFER RATIO

...~o
vs vs (/)
INPUT DIODE FORWARD CURRENT FREE-AIR TEMPERATURE _
1.2
~ePL~530 ...
1.1
~5V (/)
..,0 1.1 .g Vo = 0.4 V - -- Q)
'"
a: 1.0 ~
a:'" IF = 16 mA -+--HCPL2531 C.
$ HCPL2531 $ 1.0
V ............ +-- :::::I
0.9 o
~
<II <II /,,/
c: c:
~ o
.::'"
E 0.7
~
0.8
h/
HCPL2530
.::'"
c: 0.9
/ /
/
/
-- ~" ...o
C-
u
:;
"C
0.6
0.5
~
/ _._-
U
~
:;
I
I
I
""R
" O
.~
OJ
E
0.4
[h'1 "C
"
.~
OJ
0.8 +-
, 1---. --- - - I---'
<; E
0.3 <;
2 Vce = 5 V 2
I 0.2 I 0.7
a: Vo = 0.4 V a:
I-
u 0.1 TA = 25°C I-
U
Normalized to IF = 16 mA
o L-... 0.6
1 2 4 7 10 20 40 70 100 -60 -40 -20 0 20 40 60 80 100
IF - Forward Current - mA TA -Free-Air Temperature- °e
FIGURE 5 FIGURE 6
TEXAS ~ 3-73
INSTRUMENTS
HCPL253~ HCPL2531

vs vs
10.000 <f'. 30
Vcc 5V I Vcc = 5 V
c(
4000
Va 5V .,.,
.0 Va = 0.4 V
t: IF - 0
I 1000 I a:: 25 I-I---+----+--=>.......- T A = 25°C
E
~ 400
u
;;
~
100
/ '.::.,*
t:
20
E
"
So 40 ~ ~
0" ;; 15
U
a; 7
> 10 ..,
'iii
"
--'
i:. 4
t:
~ 10
Ol
J: 7 :::"
I i5
:I: I 5
9 0.4 U .,
a:
E
[.7
0.1 f- 0
U
-75 -50 -25 0 25 50 75 100 125 0 5 10 15 20
TA--Free-Air Temperature- °C IF - Quiescent Input Current - mA
0 FIGURE 7 FIGURE 8
"C
r+
0
(")
0
I: NORMALIZED FREQUENCY RESPONSE PROPAGA TION DELAY TIME
"C vs vs
~
...
C/l
LOAD RESISTANCE FREE-AIR TEMPERATURE
o --.:::: 1.2~~-~
t-- j--...j-..
Ui
0 -5
~~ '""-
I
"E
1.1
iii"
~ ~ ~~
III j:: 1.0
r+ "C
.,>
...
0 I
'"0t:"
-10 I - - I-- I- RL = .J
100 n a;
~
0.
a::'"
" -15
RL = 220 n·
RL"' 470n..../
RL = 1 kn :=;;
D 1\
o
t:
..,o
.,~0.
0.9
0.8
"C
I I [\
"
.!:!
'iii
o
.t 0.7
-20 I
E
0 --'
:I:
z e-
-25
IF = 16 mA :5 0.5 1--1--c.....-q--+--+--f---+--l----1
TA ~ 25 0 c
1 i
e-
-30 0.4
0.1 0.2 0.4 0.7 1 2 4 7 10 -60 -40 -20 0 20 40 60 80 100
f-Frequency-MHz T A - Free-Air Temperature - °C
FIGURE 9 FIGURE 10
3·74 TEXAS •
INSTRUMENTS
HCPL2601
02968, NOVEMBER 19B6
• Gallium Arsenide Phosphide LED Optically • High-Voltage Electrical

Coupled to an Integrated Circuit Detector Insulation ... 3000 V DC Min
• Internal Shield for Common-Mode Rejection • High-Speed Switching ... 75 ns Max
• Compatible with TTL and LSTTL Inputs • UL Recognized ... File Number E65085
• Low Input Current Required to Turn Output • Directly Interchangeable with Hewlett
On ... 5mAMax Packard HCPL2601
description
The HCPL2601 optocoupler is designed for use in high-speed digital interfacing applications that require
high-voltage isolation between the input and output. It is recommended for use in extremely high ground-
noise and induced-noise environments. Applications include line receivers, microprocessors or computer
interface, digital programming of floating power supplies, motors, and other control systems.
The HCPL2601 high-speed optocoupler consists of a GaAsP light-emitting diode and an integrated light
detector composed of a photodiode, a high-gain amplifier, and a Schottky-clamped open-collector output
transistor. An input diode forward current of 5 milliamperes will switch the output transistor low, providing
an on-state drive current of 13 milliamperes (eight 1.6-milliampere TTL loads). A TTL-compatible enable
II
input is provided for applications that require output-transistor gating.
The HCPL2601 is mounted in a standard a-pin dual-in-line plastic package.
The HCPL2601 is characterized for operation over the temperature range of OOC to 70°C. The internal
shield provides a guaranteed common-mode transient immunity of 1000 volts/microsecond minimum. ...o
C/)
mechanical data
...ca
"0
~
9'91 10'3901~
-...
C/)
Terminal connections: 9,40 (O.370~
2. Anode
3. Cathode
} Light-emitting
diode
(0) 0 G C/)
4.
5.
No internal connection
GND
~
6.
7.
Output
Enable
8. Vee
! Detector
o
C.
:::l
()
...c.
o
o
1I.~7'87 10.3101711.
r
~~:: 11:::::_1
If 1010.2401 \1
6,
0000
0,89 (0.035) MINi
J I!--+f- 1,78 (0.070)
r I 1,14 (0.045)
r-~II----:--------'
4,70 (0.185) MAX 1--1r-,....,r--'"""1""--'-'-"";
2,92 (0.115) MIN

0.33 (0.013)~~ I
0,18 (0.007) 1,40 (0.055) 2,79 (0.110)
0,76 (0.030) 2,29 (0.090)
standard warranty. Production processing does not TEXAS • 3-75
necessarily include testing of all parameters. INSTRUMENTS
HCPL2601
FUNCTION TABLE logic diagram (positive logic)

INPUT ENABLE OUTPUT 121
IFlon) H L ANODEJ -l+ r-~~--------------~18~IVCC
IFloff) X H 131 -1+
X L H CATHODE )
I
I
I
SHIELD
ENABLE
Supply voltage, Vee. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7 V
Enable input voltage (not to exceed Vee by more than 500 mV) ... . . . . . . . . . . . . . . . . . .. 5.5 V
Output voltage ............................... '. . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7 V
Peak forward input current (:s; 1 ms duration). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 40 mA
•
Average forward input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 20 mA
Output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 25 mA
Storage temperature range ......................................... - 55 °e to 125°e
o
"C
Operating free-air temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ooe to 70 0 e
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds ...................... 260 0 e
r+
o
(") recommended operating conditions
o MIN NOM MAX UNIT
s::::
"C vee Output supply voltage Isee Note 1) 4.5 5 5.5 V
CD
... VIHIEN) High-level enable input voltage Isee Note 2) 2 Vee V
en VILIEN) Low~level enable input voltage 0 0.8 V

IFlon) Input forward current to turn output on 6.3 15 rnA
iii IFlolI) Input forward current to turn output off 0 250 ~A

o IOL Low-level (on-state) output current 13 rnA
or
r+
TA Operating free-air temperature 0 70 De
...o
en
NOTES: 1. All voltage values are with respect to GND Ipin 51.
2. No external pullup is required at the enable input; an open circuit will establish the high level.
3-76 TEXAS . "

INSTRUMENTS
HCPL26D1
noted)
VF Input forward voltage IF = 10 rnA, TA = 25°C 1.6 1.75 V
"VF Temperature coefficient of forward voltage IF = 10 rnA -1.8 mV/oC
VBR Input reverse breakdown voltage IR-l0~A, TA _ 25°C 5 V
VCC = 5.5 V, V(EN) = 2 V,
VOL Low-level output voltage 0.23 0.6 V
IF = 5 rnA, IOL = 13 rnA
VCC = 5.5 V, Vo = 5.5 V,
IOH High-level output current 250 ~A
VIEN) = 2 V, IF = 250 ~A
IIHIENI High-level enable input current VCC = 5.5 V, VIENI = 2 V -0.2 rnA
IIL(EN) Low-level enable input current VCC = 5.5 V, V(EN) = 0.5 V -0.5 -2 rnA
VCC = 5.5 V, V(EN) = 0.5 V,
ICCH Supply current, high-level output 10 15 rnA
IF = 0
VCC - 5.5 V, VIEN) - 0.5 V,
ICCL Supply current, low-level output 13 19 rnA
IF = 10 rnA
VIO = 3000 V, t = 5 s,
110 Input-output insulation leakage current TA = 25°C, RH = 45%, 1 ~A
See Note 1
VIO = 500 V, TA = 25°C.
10 12
'10 Input-output resistance
°
-...
See Note 1
Ci Input capacitance VF = 0, f = 1 MHz 60 pF
CI)
f = 1 MHz, TA = 25°C,
Cio Input-output capacitance
See Note 1
0.6 pF
~
...
o
t All typical values are at VCC = 5 V, TA = 25°C.
NOTE 1: These parameters are measured between pins 2 and 3 shorted together and pins 5, 6, 7, and 8 shorted together,
o
-...
CI)
switching characteristics at Vee = 5 V. TA = 25°e CI)
PARAMETER TEST CONDITIONS MIN TYP MAX UN.IT ~

Propagation delay time, low-to-high IF = 7.5 rnA, RL = 350 (J, c.
tpLH
level output, from LED input CL = 15 pF, See Figure 1
42 75 ns :::s
Propagation delay time, high-to-Iow IF - 7.5 rnA, RL - 350O,
o
(.)
tpHL
level output, from LED input
Propagation delay time, low-to-high
CL=15pF,
IF = 7.5 rnA,
See Figure 1
RL = 350O,
42
40
75 ns
ns
...
o
C-
tPLH(ENI
level output, from enable CL = 15 pF, See Figure 2 O
Propagation delay time, high-to-Iow IF = 7.5 rnA, RL = 350O,
tpHL(EN) 25 ns
level output, from enable CL = 15 pF, See Figure 2
IF = 7.5 rnA, RL = 350O.
tr Rise time 20 ns
CL = 15 pF
IF = 7.5 rnA, RL = 350O,
tf Fall time 30 ns
CL = 15 pF
dVCM Common-mode input transient <l.VCM - 50 V, IF - 0,
(HI 1000 10000 V/~s
dt immunity, high-level output RL = 350O, See Note 2 and Figure 3
dVCM Common-mode input transient <l.VCM = -50 V, IF = 7.5 rnA,
ILl -1000 -1000 V/~s
Cit immunity, low-level output RL = 350O, See Note 2 and Figure 3
does not cause the output voltage to drop below 2 V, Common-mode input transient immunity, low-level output, is the maximum
TEXAS " , 3-77

INSTRUMENTS
HCPL2601
PULSE SV
GENERATOR
Zo - SO [J
r
tr = 5 ns
I
: RL = 3S0 [J
I
-= I I
INPUT
MONITOR ___ JI OUTPUT
47 [J OPEN CL 0.01 pF
(See Note Al
TEST CIRCUIT
INPUT .1 \---3S0mVIIF ~ 7.SmAI
•
MONITOR - - - - - - - - - - 1 7 s m V I I F ~ 3.7SmAI
I I . 0 V
-+t tpHL 14-- ~ tpLH I+-
~
I VOH
OUTPUT 1 1 ________ ---1SV
o VOLTAGE ----VOL
"C
r+
o WAVEFORMS
C')
o FIGURE 1. tPLH AND tpHL FROM LED INPUT TEST CIRCUIT AND WAVEFORMS
r:::
"C IF = 7.S mA---+
CD
.... -----,
~-'--------------------__~~SV
f rn~
til
I
I RL - 3S0 [J
til
o -= I I I
i» ENABLE I ____ .JI
r+
o MONITOR L ___ _
.... OUTPUT
-
til PULSE
GENERATOR
Zo - SO [J
tr - 5 ns
CL
(See Note Al
0.01 pF
TEST CIRCUIT
-- - - - - 3 V
ENABLE
INPUT'--i------ - - \ ,- - - - - - 1 . S V
1 1 OV
tPHL(ENI~ ~tPLH(ENI
I I VOH
OUTPUT I I
VOLTAGE WAVEFORMS
FIGURE 2. tPLH(EN) AND tPHL(EN) FROM ENABLE TEST CIRCUIT AND WAVEFORMS
NOTE A: CL is approximately 1 5 pF, which includes probe and stray wiring capacitances.
3-78 TEXAS •
INSTRUMENTS
HCPL2601
r--.--------------------.-~~5V
OUTPUT
0.011'F
OPEN
GENERATOR
TEST CIRCUIT
GENERATOR
50V--l: 90% 90%~
oV
OUTPUT---__.
10%
I
I
I
I
--+I I+- tr
I 10%
I I
tf -+I I+-
5 V
II
-.
t/)
lL.. _______ ".2V

...
o
SWITCH AT A: IF - 0 ctI
~--"'0.8V '0
O U T P U T - - - - - - - - - " - - - " - - VOL
SWITCH AT B: IF - 7.5 rnA -..
~
t /)
VOLTAGE WAVEFORMS Q)
FIGURE 3. TRANSIENT IMMUNITY TEST CIRCUIT AND WAVEFORMS c..
::::I
o
t,)
TYPICAL APPLICATION INFORMATION ...
o
Q,
A ceramic capacitor (0.01 I'F to 0.1 I'F) should be connected between pins 8 and 5 to stabilize the high- o
NCcrr-rJtB===~==~
/L--...., ENABLE
\===l::=:t:== '\,r----' (IF USEDI
"'\~=====:) OUTPUT 1
TEXAS .." 3-79

INSTRUMENTS
HCPL26Dl

vs vs
20 0.4 ".,V,-e-e-.---=5:-.5::--:c
V:-r--,--,--,--,-----,
18
TA = 25 0 e
I > V(EN) = 2 V
, 16 I I
:!l,
IF = 5 rnA
10L = 13 rnA
oct
E 14 I ! 0.3
'0
f-~-_;-_+-+-+-+--1_-i
~
f 12 J >
~
:::I
S-
:; :::I
o 10 o 0.2 f--t--+--t---+--+--+--t--t
.
"E
~
8 / Qj
.,
>
o
u.. 6 / ....I
~
I
/ Io 0.1 f--t--+--t---+--+--+--t--t
E~ 4
2
/ >
....I
o
o / OL---'_~_-L_-L_~_~_L---'
o
'C
1.1 1.2 1.3 1.4 1.5 1.6 1.7 o 10 20 30 40 50 60 70 80
TA-Free-Air Ternperature- °e
"'
o VF-Forward Voltage-V
(') FIGURE 6
FIGURE 5
o
C
'C HIGH-LEVEL OUTPUT CURRENT
c;-
... vs
-
CJ)
i ii
o
Q)
octc:
4
Vee - 5.5 V
Vo = 5.5 V
IF = 250/LA
~c:
"'
o .,
... ~
3
-
CJ)
0
S
S-
:::I 2
0
Qj
>
"
....I
1:.
--
Ol
:i:
I
J: I-
.9
o
o 10 20 30 40 50 60 70 80
TA-Free-Air Ternperature- °e
FIGURE 7
3-80 TEXAS ~
INSTRUMENlS
HCPL2601

vs
100
<II
Vcc = 5 V
T n
.
E
90
80
RL = 350
TA = 25°C
j::
i;" 70
--
Qj
C
-
60
--
..,o
I:
tP~
..
'"go
50
........':::::-
40
0:
~
J:
30
r-- tpHL
-
So 20
:i:
..J 10
So
o
4 6 8 10
IF-Pulse Forward Current-mA

12 14 16
.
(/)
...
o
FIGURE 8 ca
"0
LOAD RESISTANCE
vs -..
~
( /)
100 ~
<II
VCC = 5 V C.
T 90 IF = 7.5mA ::::l
TA = 25°C
o
CD
/' (.)
E
j::
i;"
80
70 ./
/" ...
o
c.
c
Qj
60
tpLH / o
..,o
--- ... V
I:
..'" 50
tPHL
go 40
0:
~ 30
J:
So 20
:i:
..J 10
So
o
o 2 3 4 5
RL - Load Resistance - kn
FIGURE 9
TEXAS ~ 3-81
INSTRUMENTS
o
"0
.-+
o(')
o
t:
"0
CD
...
VI
VI
o
iii
.-+
o...
VI
3-82
HCPL263D
DUAL-CHANNEL OPTOCOUPLER/OPTOISOLATOR
D2969, NDVEMBER 1986
• Gallium Arsenide Phosphide LED Optically • High-Speed Switching ... 75 ns Max

Coupled to an Integrated Circuit Detector
• Directly Interchangeable with Hewlett
• Compatible with TTL and LSTTL Inputs Packard HCPL2630
• Low Input Current Required for On-State • UL Recognized ... File Number E65085
Output ... 5 rnA Max
• High-Voltage Electrical
description
The HCPL2630 is a dual optocoupler designed for use in high-speed digital interfacing applications that
require high-voltage isolation between the input and output. Applications include line receivers,
microprocessors or computer interface, and other control systems.
Each channel of the HCPL2630 optocoupler consists of a GaAsP light-emitting diode and an integrated
light detector composed of a photodiode, a high-gain amplifier, and a Schottky-clamped open-collector
output transistor. An input diode forward current of 5 milliamperes will switch the output transistor low,
providing an on-state drive current of 13 milliamperes (eight 1.6-milliampere TTL loads).
The device is mounted in a standard 8-pin dual-in-line plastic package.
The HCPL2630 is characterized for operation over the temperature range of OOC to 70°C.
mechanical data ...o

Vl
~
CO
Terminal connections: "0
1. 1 Anode
2. 1 Cathode
3. 2 Cathode
4. 2 Anode
5. GND
-...
Vl
Vl
6. 2 Output ~
7. 1 Output
8. Vee c.
::::s
oo
~
o
c.
'i.~7'87 10'3101~'i. o
Ifr:::~ ::::::1
0000
6'10102401,1 0,8910.035) MIN1
~'----+-i--i----'
4.70 (0.185) MAX H-i-4--...,......--...........-l
2,92 (0.115) MIN

0.33 (O.013)~\.- I \•• \.
0,18 (0.007) 1,40 (0.055) 2,79 (0.110)
0,76 (0.030) 2,29 (0.090)
current 8S of publication date. Products conform to
TEXAS . "
~~~~~:~~i~ar::I~~~ ~!::i~~ti:f :I~O:=:::~:~~S not INSTRUMENTS
3-83
HCPL263D
DUAL-CHANNEL OPTOCOUPLER/OPTDlSOLATOR
logic diagram (positive logic)

(1)
1 ANODE--. .--.---.----------~VCC
-+ 1 OUTPUT
-+
lCATHODE~
2ANODE~
____--+-;.;16.:....) 2 OUTPUT
2CATHODE~
~____~~~~~15~) GND
Output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7 V
Peak forward input current, each channel (:51 ms duration) . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
o Average forward input current, each channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 mA
"0
r+ Output current, each channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 16 mA
oC') Output power dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 85 mW
o Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55°C to 125°C
!: Operating free-air temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ooe to 70°C
"0 Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds. . . . . . . . . . . . . . . . . . . . .. 260°C
...
CD
til recommended operating conditions
Ui MIN NOM MAX UNIT

o Vee Output supply voltage Isee Note 1) 4.5 5 5.5 V
i»
r+
IFlon) Input forward current to turn output on 6.3 15 rnA
o
... IFloff) Input forward current to turn output off 0 250 pA
-
til IOL
TA
Low-level (on-state) output current
Operating free-air temperature
NOTE 1: All voltage values are with respect to GND Ipin 5).
0
13
70
rnA
·e
3-84 TEXAS . "

INSTRUMENTS
HCPL2630
noted)
VF Input forward voltage IF = 10 mA, TA = 25°C 1.6 1.75 V
"VF Temperature coefficient of forward voltage IF - 10 mA -1.8 mV/oC
VBR Input reverse breakdown voltage IR=10~A, TA = 25°C 5 V
VCC = 5.5 V, IF = 5 mA,
VOL Low~level output voltage 0.23 0.6 V
10L = 13 mA
VCC = 5.5 V, Vo = 5.5 V,
10H High-level output current 250 ~A
IF = 250 ~A
ICCH Supply current, high-level output VCC = 5.5 V, IF = 0 20 30 mA
ICCL Supply current, low-level output VCC = 5.5 V, IF = 10 mA 26 36 mA
VII = 500 V, t = 5 s,
III Input-input insulation leakage current TA = 25°C RH = 45%, 0.005 ~A
See Note 2
VIO = 3000 V, t = 5 s,
110 Input-output insulation leakage current TA = 25°C, RH = 45%, 1 ~A
See Note 1
VII = 500 V, TA = 25°C,
'II Input-input resistance 1011 Il
See Note 2
'10
Ci
en
Input-output resistance
Input capacitance
Input-input capacitance
VIO = 500 V,
See Note 1
VF - 0,
VF = 0,
TA = 25°C,
f - 1 MHz
f = 1 MHz
10 12
60
0.25
Il
pF
pF
-...
I /)
o
+'"
Cio Input-output capacitance
f = 1 MHz, TA = 25°C,
0.6 pF ~
See Note 1 o
-...
I/)
t All typical values are at VCC = 5 V, TA = 25°C.
NOTES: 1. These parameters are measured between pins 1. 2, 3, and 4 shorted together and pins 5, 6, 7, and 8 shorted together. I/)
Q)
switching characteristics at Vee = 5 V. TA = 25°e

C.
:::I
o
(.)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Propagation delay time, low~to-high-Ievel IF = 7.5 mA, RL = 350 Il,
o
+'"
tpLH 42 75 ns 0-
output, from LED input See Figure 1
tPHL
Propagation delay time, high-to-Iow level
CL = 15 pF,
IF - 7.5 mA, RL - 350O,
42 75 ns
o
output, from LED input CL=15pF, See Figure 1
IF = 7.5 mA, RL = 350 Il,
tr Rise time 20 ns
CL = 15 pF
IF = 7.5 mA, RL = 350 Il,
tf Fall time 30 ns
CL = 15 pF
AVCM = 10 V, IF = 0,
dVCM (HI Common-mode input transient immunity, RL = 350 Il, 50 vr~s
AVCM - -10 V, IF - 5 mA,
dVCM (LI Common-mode input transient immunity, RL = 350 Il, -150 vr~s
dt low-level output
rate of fall of the common-mode input voltage that does not cause the o~tput voltage to rise above 0.8 V.
TEXAS .." 3-85

INSTRUMENTS
POST OFFICE BOX 655303 6 DALLAS, TEXAS 75265
HCPL2630
DUAL·CHANNEL OPTOCOUPLER/OPTOISOLATOR

(EACH CHANNEL)
IF-+
PULSE r--.------------------~.-~~5V
GENERATOR
r
Zo - 50!l
I -+
tr ... 5 ns -+
I
-= I
INPUT
MONITOR --.-----t---'
L ___ _ OUTPUT
47 !l CL O.OlI'F
(See Note AI
TEST CIRCUIT
INPUT
MONITOR
J 1------
\---350mV(lF ~ 7.5 mAl
1--_175moV(lF - 3.75 mAl
o ..., tpHL 14- ~ tPLH 14-

~
"C I VOH
r+
o OUTPUT I I
n VOLTAGE ------ ---1.5V
oc: ----VOL
WAVEFORMS
..
"C
CD
en
NOTE A: CL is approximately 15 pF, which includes probe and stray wiring capacitances .
-en
o
FIGURE 1. tpLH AND tpHL FROM LED INPUT TEST CIRCUIT AND WAVEFORMS
Dr
.-
r+
o
en
3-86 TEXAS •
INSTRUMENTS
HCPL2630

(EACH CHANNEL)
5V
r
I
I OUTPUT
I
I
L 0.01 pF
GENERATOR
TEST CIRCUIT
dVCM 8 V
10V--7: ~ - trortf
90%~
II
GENERATOR 90%
10% I I 10%
OV I
I I I I
~ I+-t, tf .... ~
-...
CI)
OUTPUT ~...- - - - - - - 5 V ....o

ns
SWITCH AT A: IF - 0
"0
O U T P U T - - - - - - - - -...~ VOL
SWITCH AT 8: IF - 5 mA
-...
.!!1
CI)
Q)
VOLTAGE WAVEFORMS Q.
::::I
FIGURE 2. TRANSIENT IMMUNITY TEST CIRCUIT AND WAVEFORMS o
(,)
....o
C-
TYPICAL APPLICATION INFORMATION O
A ceramic capacitor (0.01 I'F to 0.1 I'F) should be connected between pins 8 and 5 to stabilize the high-
LGND BUS (BACK I

<~~--~--~-~-~-
NCcrr-rJ~==~==~
\===:jl=:t=====~ OUTPUT 1
'\~=====~) OUTPUT 2
TEXAS . " 3-87

INSTRUMENTS
HCPL2630

vs vs
20
18
TA = 25°e
I >
Vee = 5.5 V
IF = 5 mA
16 I . I
Cl
IOL-13mA
ct
E
I 14 I i:l
>
o
0.3 1---I--+--+--4---!---I---+_--I
~
I:
e 12 II ~
::l
:; .9-
::l
u 10 o 0.2 I--I,---+--+-+-+--I--+--I
.
"E
;;:: 8 / OJ
>
.!l
;;
U-
6 / ~
I ~I
~
4 / o-'
0.1 L--I--+-+--f---I--+--f--I
r
2
/ >
o ./ OL-~ __- L__ L-~ __- L__ i-~ __ ~
o 1.1 1.2 1.3 1.4 1.5 1.6 1.7 o 10 20 30 40 50 60 70 80
....
"0
o VF-Forward Voltage-V TA-Free-Air Temperature- °e
C')
FIGURE 4 FIGURE 5
o
s:::
"0 HIGH-LEVEL OUTPUT CURRENT
CD
... vs
CII FREE-AIR TEMPERATURE
4
CII Vee = 5.5 V
o ctI: Vo - 5.5 V
Q) IF = 250 ~A
....o ~
I
I:
... e
:;
3
-
CII u
~
::l
.9-
::l
0
2
.
OJ
>
-'
-- -
.i::Cl
J:
I
J:
9
o
o 10 20 30 40 50 60 70 80
TA -Free-Air Temperature- °e
FIGURE 6
3-88 TEXAS •
INSTRUMENTS
HCPL2630

vs
100
OJ
VCC ~ 5 V
i 90 RL - 350 n
Q) TA = 25°C
E 80
i=
~ 70
OJ
~
o
·iii
.
60
t~
-
--
50 ....... I--""
I":::::- ~
C>
~ 40 tpHL
D.
~ 30
::t:
e-
II
20
:5
e-
10
o
4 6 8 10 12 14 16 - ...
r.n
IF-Pulse Forward Current-rnA ...
o
ctI
FIGURE 7
"0
r.n
vs
-...r.n
LOAD RESISTANCE
.!?
100
Vce = 5 V
c.
OJ ::::s
i IF = 7.5 rnA o
. 90
TA = 25°C /' (,)
E
i=
~
80
70
/V ...c.
o
OJ
C
tpLH /" o
60
..,.o
c
50
V
.g.
C>
Ii:
~
40
30
--- tpHL
::t:
e- 20
:i:
...J 10
e-
o
o 2 3 4 5
RL - Load Resistance - kn
FIGURE 8
TEXAS • 3-89
INSTRUMENTS
o
...o
"C
C'l
o
I:
"£.
CD
~
VJ
VJ
o
...oQT
-
~
VJ
3-90
HCPL2631
03114. APRIL 1988
• Gallium Arsenide Phosphide LED Optically • High-Speed Switching ... 75 ns Max

Coupled to an Integrated Circuit Detector
• Directly Interchangeable with Hewlett
• Compatible with TTL and LSTTL Inputs Packard HCPL2631
• Low Input Current Required for On· State • UL Recognized ... File Number E65085
Output ... 5 mA Max
• Internal Shield for High Common-Mode
• High-Voltage Electrical Rejection
description
The HCPL2631 is a dual optocoupler designed for use in high-speed digital interfacing applications that
require high-voltage isolation between the input and output. Applications include line receivers,
microprocessors or computer interface, and other control systems.
Each channel of the HCPL2631 optocoupler consists of a GaAsP light-emitting diode and an integrated
light detector composed of a photodiode, a high-gain amplifier, and a Schottky-clamped open-collector
output transistor. An input diode forward current of 5 mA will switch the output transistor low, providing
an on-state drive current of 13 mA (eight 1.6-mA TTL loads).
The device is mounted in a standard a-pin dual-in-line plastic package. The internal shield provides a
guaranteed common-mode transient immunity of 1000 v/p.5 minimum.
The HCPL2631 is characterized for operation over the temperature range of OOC to 70°C.
-...o
tn
mechanical data
...
CO
'0
-...
1=-9.91103901-=1
~ I~W-;' ~ I
Terminal connections: tn
1. 1 Anode
2. 1 Cathode
3.
4.
5.
2 Cathode
2 Anode
GND
I tn
Q)
6. 2 Output
7. 1 Output Q.
8. Vee :::l
o
CJ
...c.
o
o
0000
0,89 (O.03S) MIN1
r-...--1H--~-"'"
4.70 '(0.185) MAX
2,92 (0.115) MIN

0.33 (O.O'3J~\.-
0,18 (0.0071 2,79 (O.ll0)
2.29 {O.OSOI
currant as of publication data. Products conform to
specifications per the terms of Texas Instruments TEXAS • 3-91
~~~=~~i~'[::,~1e ~:~:;ti:: :.r:::::::t::'s~ not INSTRUMENTS
POST OFFiCe BOX 655303 • DALLAS, TeXAS 75265
HCPL2631
DUAL-CHANNEL OPTOCOUPLERJOPTOISOLATOR
logic diagram (positive logic)
III
1 ANODE - .
I
I r--.__ ________
~ ~18~1 VCC
++ 1 OUTPUT
1 CATHODE.EL5
++
I
2ANODE~
SHIELD
141
<'----.--+-----.
I
I
I
I
I
~_-+_.;..16-,-1 2
2CATHODE~ fI
I
OUTPUT
I
~____~~____~~-e~1~5~1 GND
Output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7 V
Peak forward input current, each channel (:5 1 ms duration) . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
...oo
"0
Average forward input current, each channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 mA
Output current, each channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 16 mA
(")
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55 DC to 125 DC
o Operating free-air temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 0 DC to 70 DC
C
"0 Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . 260 D e
...CDen
-en
o
Vee Output supply voltage (see Note 1)

MIN
4.5
NOM
5
MAX
5.5
UNIT
V
...o
Dr IFlonl
IFloff)
Input forward current to turn output on
Input forward current to turn output off
6.3
0
15
250
rnA
~A
...
- IOl Low·level (on-state) output current 13 rnA
en TA Operating free-air temperature 0 70 °e
NOTE 1: All voltage values are with respect to GND Ipin 5).
3-92
TEXAS " ,
INSTRUMENTS
POST OFFICE BOX $55303 • OAUAS, TeXAS 75265
HCPL2631
noted)
VF Input forward voltage IF = 10 rnA. TA = 25°C 1.6 1.75 V
"VF Temperature coefficient of forward voltage IF = 10 rnA -1.8 mV/oC
V8R Input reverse breakdown voltage IR = 10 pA. TA = 25°C 5 V
VCC - 5.5 V. IF - 5 rnA.
VOL Low-level output voltage 0.23 0.6 V
10L = 13 rnA
High-level output current

VCC - 5.5 V. Va = 5.5 V.
10H 250 pA
IF = 250 pA
ICCH Supply current, high-level output VCC - 5.5 V. IF =0 20 30 rnA
ICCL Supply current, low-level output VCC = 5.5 V. IF = 10 rnA 26 38 rnA
VII = 500 V. t = 5 s.
III '"put-input insulation leakage current TA = 25°C RH = 45%. 0.005 pA
See Note 2
Via = 3000 V. t = 5 s.
110 Input-output insulation leakage current TA = 25°C. RH = 45%. 1 pA
See Note 1
VII = 500 V. TA = 25°C.
rll Input-input resistance lOll Il
See Note 2
Via = 500 V. TA = 25°C.
Input-output resistance 10 12 Il
'10
Ci Input capacitance
See Note 1
VF = O. f = 1 MHz 60 pF -...
CI)
eii Input-input capacitance VF = O. f = 1 MHz 0.25 pF o
f - 1 MHz. TA = 25°C. +'"
Cio Input-output capacitance 0.6 pF CO
See Note 1
"0
tAli typical values are at VCC = 5 V. TA = 25°C.
NOTES: 1. These parameters are measured between pins 1. 2. 3, and 4 shorted together and pins 5, 6, 7, and 8 shorted together.
-...
CI)
CI)
~
switching characteristics at Vee = 5 V. TA = 25°e Q.
~
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT o
(,)
Propagation delay time, low-to-high-Ievel IF = 7.5 rnA. RL = 350 Il. o
tpLH 42 75 ns
output, from LED input CL = 15 pF. See Figure 1 +'"
Q.
tpHL
Propagation delay time, high-to-Iow level
output, from LED input
IF - 7.5 rnA.
CL = 15 pF.
RL - 350 Il.
See Figure 1
42 75 ns o
IF = 7.5 rnA. RL = 350 Il.
20 ns
tr Rise time
CL = 15 pF
IF = 7.5 mAo RL = 350 Il.
tf Fall time 30 ns
CL = 15 pF
dVCM = 50 V. IF = O.
dVCM (HI RL = 350 Il. 1000 10000 Vips
dVCM - -50 V. IF - 5 rnA.
dVCM (LI RL = 350 Il. -1000-10000 VIpS
dt low-level output
rate of fall of the common-mode input voltage that does not cause the output voltage to rise "above 0.8 V.
TEXAS • 3-93
INSTRUMENTS
HCPL2631

(EACH CHANNEl)
PULSE
GENERATOR
Zo - 50 n
- ----,I
,--,~------------------,-~~5V
RL =350n
tr - 5 ns
INPUT
MONITOR OUTPUT
47 n CL 0.01 pF
ISee Note AI
TEST CIRCUIT
INPUT I \ ---350mVIIF ~ 7.5 mAl

MONITOR -1i - - - - - -I\,- - - 175 mov IIF - 3.75 mAl
~ tpHL 14- --+I tpLH ~

o
~
I VOH
"C OUTPUT I I
r+
o VOLTAGE -- - - - - ---1.5 V
n ----VOL
o WAVEFORMS
I:
"C NOTE A: CL is approximately 15 pF, which includes probe and stray wiring capacitances.
CD
...
en FIGURE 1. tPLH AND tpHL FROM LED INPUT TEST CIRCUIT AND WAVEFORMS
Ui
o
Qi
r+
...
o
-
en
3·94
TEXAS •
INSTRUMENTS
HCPL2631

(EACH CHANNEL)
r--.--------------------.-~~5V
r
I
I ~--___,.___------....--t_OUTPUT
I
I
L 0.01 pF
GENERATOR
TEST CIRCUIT
dVCM BV
10V--7: ~ - tr or tf
GENERATOR 90% 90%~
10% I . I 10%
oV I
I
I I I
~ I4-t, tf-+l ~
-...
..
( /j
OUTPUT '""-"'_------- 5 V o
SWITCH AT A: IF - 0 ctI
'0
~
O U T P U T - - - - - - - - -..~VOL
SWITCH AT B: IF - 5 rnA
...
(/j
CJ.)
VOLTAGE WAVEFORMS
Q.
FIGURE 2. TRANSIENT IMMUNITY TEST CIRCUIT AND WAVEFORMS ::l
o
(.)
------------------------------------------------------------Boc.
TYPICAL APPLICATION INFORMATION
A ceramic capacitor (0.01 /iF to 0.1 /iF) should be connected between pins 8 and 5 to stabilize the high-
LGND BUS IBACKI

<~~--~--~--~-
NC cr:r-rJ:c===::::n::==~
\==~r=:F====~ OUTPUT 1
'\~=====:) OUTPUT 2
TEXAS .." 3-95

INSTRUMENTS
HCPL2631

vs vs
20
18
TA - 25°e
I >
Vee - 5.5 V
IF = 5 mA
16 I "
Cl
I IOL = 13 mA
<l
E 14 I ~ 0.3
.!. / >
"~
~
12
:; "
So
U 10 o" 0.2 f---ll------l---+--+--+--+---i---l
"t>
10
~ 8 / a;
>
.!l
;;
LL.
6
/ ~
I .9I
~
4 I ...J
0.1 f---ll------l---+--+--+--+---i---l
/ o
2 >
o ./ OL-~ __-L__ L-~ __- L__~~__~
1.1 1.2 1.3 1.4 1.5 1.6 1,7 o 10 20 30 40 50 60 70 80
o T A - Free-Air Temperature - °e
'C VF-Forward Voltage-V
..t-
o FIGURE 4 FIGURE 5
(')
o
s::: HIGH-LEVEL OUTPUT CURRENT
'C
vs
ti' FREE-AIR TEMPERATURE
"'"
til 4
Vee = 5.5 V
'0 <l Vo = 5.5 V
o
ii) .!." IF = 250/LA
..t-
O
"~ 3
-"'"
til u"
:;
c.
:;
0 2
a;
>
"
--
...J
J:.
Cl
J:
I
J:
9
o
o 10 20 30 40 50 60 70 80
T A - Free-Air Temperature - °e
FIGURE 6
3-96 TEXAS . "

INSTRUMENTS
HCPL2631

vs
100
.f 90
Vee - 5 V
RL - 3500
., TA = 25°e
E 80
i=
~ 70
OJ
~
o
.~
60
50
t~
-
.,'"
-
~
~~
g. 40
- r-- tpHL
d:
:.. 30 -
:t:
!- 20
a.:i: 10
o
4 6 8 10
IF-Pulse Forward Current-rnA
12 14 16
-...
o
( I)
+oJ
FIGURE 7
ca
"0
-...
(I)
vs
LOAD RESISTANCE (I)
Q)
..f 100
90
Vce - 5 V
IF - 7.5 rnA
c..
::l
'"
E 80
TA = 25°e
/" o
CJ
i= ,,// o
~ 70 +oJ
OJ
o 60
tpLH V Q.
o
..,.,"o
..e'"
CL
:..
:t:
!-
50
40
30
20
-- V
tPHL
:i:
.... 10
!-
o
o 2 3 4 5
RL - Load Resistance - kO
FIGURE 8
TEXAS . " 3·97

INSTRUMENTS
. POST OFFICE BOX 866303 • DALLAS. TEXAS 75265
o
...o
'C
(')
o
r::::
'C
CD
...
o
o
o
...o
ii)
...
-o
3-98
HCPL2730, HCPL2731
DUAL-CHANNEL OPTOCOUPLERS/OPTOISOLATORS
D3262. JUNE 1989
• Dual-Channel Optocouplers
• High Current Transfer Ratio ... 1800% Typ at IF - 0.5 mA
• Low Input Current Requirement ... 0.5 mA
• High-Speed Switching ... 100 kbit/s Typ
• High Common-Mode Transient Immunity ... 500 VII's Typ
• High Output Current Rating of 60 mA
• UL Recognized ... File Number 65085
description
These devices are useful where large common-mode input signals exist, and in applications that require
high-voltage isolation between circuits. Applications include line receivers, telephone ring detectors, power
line monitors, high-voltage status indicators, and circuits that require isolation between input and output.
The HCPL2730 and HCPL2731 dual-channel high-gain optocouplers each consists of a pair of light-emitting
diodes and integrated high-gain photon detectors. The VCC and output terminals may be tied together
to achieve conventional photodarlington operation. An integrated emitter-base bypass resistor is provided
for low leakage.
The HCPL2730 is designed for use primarily in TTL applications. An LED input current of 1.6 mA and a
minimum current-transfer ratio of 300% from OoC to 70°C allow operation with one TTL-load input and
one TTL-load output utilizing a 2.2-kO pull up resistor. ...
I/)
The HCPL2731 is designed for use in CMOS, LSTTL, or other low-power applications. This device has ...o
CO
a minimum current-transfer ratio of 400% for only 0.5-mA input current over an operating temperature
'0
range of OoC to 70°C.
-...
~
ri "
mechanical data
I /)
IO'3'OI~
9.4010.370) ~
C.
1 #1 ANODE 00) 00 :::l
2.
3.
#1 CATHODE
#2 CATHODE o
to)
...oc.
4 #2 ANODE
S. GND
6 #2 OUTPUT
#1 OUTPUT
Vee
o
0000
0,89 10.035) MIN1
r-~g.....+----,
4.7010.185) MAX L---:~-';~-,......~
2.92 (0 115) MIN

0.33 (O.0131~\.- I I•• 1.
2.79 ro 110)
0,18 (0.0071 1,4010.055)
0,76 (0.030) 2,29 (O.090l
PRODUCTIO,. DATA documents contain information Copyright © 1989, Texas Instruments Incorporated
specifications par the tarms of Texas Instruments TEXAS • 3-99
::-:!:~~i~.i~:I~t ~:~~~ti:; ~IO:=::::t:~~S not INSTRUMENTS
HCPL2730, HCPL2731
schematic
1
r----.~-----------8~VCC
#1 ANODE]
#1 CATHODE 2 ::::t 7 #1 OUTPUT
3
#2 CATHODE ]
#2 ANODE 4 ::::t 6 #2 OUTPUT
' -__.......~5 GND
absolute maximum ratings at 25°C free-air temperature range (unless otherwise noted)
Supply and output voltage range, VCC and YO: HCPL2730 ..... . . . . . . . . . . . . .. -0.5 V to 7 V
HCPL2731 .... . . . . . . . . . . . . . . .. -0.5 to 18 V
Peak input forward current per channel (pulse duration = 1 ms, 50% duty cycle) . . . . . . . .. 40 mA
Average forward input current per channel at (or below) 50°C free-air
o
"C
temperature (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Output current per channel at (or below) 35°C free-air temperature (see Note 2). . . . . . . . .. 60 mA
r+ Input power dissipation per channel at (or below) 50°C free-air temperature (see Note 3) ... 35 mW
o
n Output power dissipation per channel at (or below) 35°C free-air
o temperature (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 100 mW
c:: Operating temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 40°C to 85 °C
"C
Storage temperature range ......................................... - 55°C to 125°C
CD
... Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds ...................... 260°C
til
NOTES: 1. Derate linearly above SOOC free-air temperature at a rate of 0.57 mA/oC.
(i;' 2. Derate linearly above 35°C free-air temperature at a rate of 1.2 mA/oC.
o 3. Derate linearly above SOOC free-air temperature at a rate of 1.0 mw/oe.
D) 4. Derate linearly above 35°C free-air temperature at a rate of 2.0 mw/oe.
r+
o...
-
til
3-100 TEXAS .."

INSTRUMENTS
HCPL2730, HCPL2731
DUAL-CHANNEL DPTOCOUPLERS/OPTOISOLATORS
noted)
HCPL2730 HCPL2731
VF Input forward voltage IF = 1.6 rnA, TA = 2Soe 1.S 1.7 1.S 1.7 V
OIVF
of forward voltage
IF = 1.6 rnA -1.8 -1.8 mV/oe
V8R Input breakdown voltage IR = 10 ~A, TA = 2Soe S S V

Vee = 4.S V, IF = 1.6 rnA,
0.1 0.4
10L = 4.8 rnA, 18 = 0
Vee - 4.S V, IF - 1.6 rnA,
0.1 0.4
10L = 8 rnA, 18 = 0
Vee = 4.5 V, IF = SmA,
0.1 0.4
10L = lS rnA, 18 = 0
Vee = 4.S V, IF=12mA,
0.2 0.4
10L = 24 rnA, 18 =0
Vee = 7 V, Va =7 V,
0.1 250
•
IF = 0, IB =0
10H High-level output current ~A
Vee = 18 V, Va = 18 V,
0.05 100
IF = 0, 18 =0
Vee = 7 V, 10 = 0,
4
Supply current, IF = 0, IB =0
leeH nA
...o...
high-level output Vee = 18 V, 10 = 0, (I)
5
IF = 0, 18 = 0
Vee = 7 V, 10 = 0,
«I
IFl = 1.6 rnA, IF2 = 1.6 rnA 0.4
=
"0
-...
Supply current, IB 0
leeL
low-level output Vee = 18V, 10 = 0,
rnA ~
IFl = 1.6 rnA, IF2 = 1.6 rnA 0.6 ( I)
18 = 0
Vee = 4.S V, Vo = 0.4 V, .!!
Q.
IF = 0.5 rnA, 18 = 0, 400% 1800% ;j
eTR Current transfer ratio

See Note 5 o
Q
Vee = 4.5V,
IF =
See Note S
1.6 rnA,
Vo
18 = 0,
= 0.4 V,
300% 1000% SOO% 1600% ...
o
Q.
rjj Input-input resistance Vii = SOD V 1011 1011 !l o
rjo Input-output resistance Vio = SOD V, See Note 6 10 12 10 12 !l
Input-input insulation Vii - 500 V, t - 5 s,
Ijj 0.005 0.005 ~A
leakage current RH = 45%
Vio = 3000 V, t = 55,
Input-output insulation
1;0 TA = 2Soe, RH = 4S%, 1 1 ~A
leakage current
See Note 6
ei Input capacitance VF = 0, f = 1 MHz 60 60 pF
eii Input-input capacitance f = 1 MHz 0.25 0.25 pF
eio Input-output capacitance f = 1 MHz, See Note 6 0.6 0.6 pF
tAli typical values are at Vee = 5 V, TA = 25°C, unless otherwise noted.

6. These parameters are measured between pins 2 and 3 shorted together and pins 5, 6, 7 and 8 shorted together.
TEXAS ~ 3-101
INSTRUMENTS
HCPL2730. HCPL2731
DUAL·CHANNEL OPTOCOUPLERS/OPTOISOLATORS
switching characteristics at vee" 5 V. TA = 25°e

HCPL2730 HCPL2731
IF = 1.6 rnA. RL = 2.2 kll.
2 20 2 20
See Figure 1
Propagation delay time, IF - 0.5 rnA. RL = 4.7 kll
tPHL 7 100 ~s
high-to-Iow level output See Figure 1
IF = 12 rnA. RL = 27011.
0.4 2 0.4 2
See Figure 1
IF - 1.6 rnA. RL - 2.2 kll
4 35 5 35
See Figure 1
Propagation delay time, IF = 0.5 rnA. RL = 4.7 kll
tpLH 6 60 ~s
IF - 12 rnA. RL - 27011.
3 10 2 10
See Figure 1
Common-mode input VCM = 10 VP-P. IF = O.
dVCM {HI transient immunity, RL = 2.2 kll. See Notes 7 and 8. 500 500 V/~s
dt
high-level output See Figure 2
Common-mode input VCM - 10 VP-P. IF - 1.6 rnA.
dVCM {LI transient immunity. RL = 2.2 kll. See Figure 2 -500 -500 V/~s
dt
low-level output See Notes 7 and 8
o
'0
NOTES: 7. Common-mode transient immunity, high-level output, is the maximum rate of rise of the common-mode input voltage that
r+
V/~
o 8. In applications where dV/dt may exceed 50.000
to protect the detector Ie
{such as static discharge I a series resistor. Rec. should be included
from destructively high surge currents. The recommended value is:
(")
o Rec ~ _--,1--,_ kll
C
'0 0.151F {mAl
...CD
tfj
iii
o
iii
r+
...
o
-
tfj
3-102 TEXAS . "

INSTRUMENTS
POST OFFICE BOX 655303 • DALLAS, ~EXAS 75265
HCPL2730. HCPL2731
TEST PER CHANNEL
PULSE
IF ... r ---------,
SV
GENERATOR
Zo - SO Il 1 -+
tr """ 5 ns 1 -+
1
INPUT CURRENT _ _ _ _. . . ....:1'--1 -r--'-...-.--OUTPUT
MONITOR 1
CL - 1S pF
1000 1 (See Note AI
I _____ _
L
f---------~~-~---GND
TEST CIRCUIT
INPUT - - - - IF
CURRENT --...J L..._ _ _ 0
OUTPUT~:
!
I I
-...
tn
I
VOLTAGE 1.5 V I 1.5 V
5V
...
o
I
tpHL -+I
I
It- +I
t--
14- tpLH
VOL
CO
'0
tn
NOTE A: CL includes probe and stray capacitances.

WAVEFORMS -...
tn
Q)
FIGURE 1. SWITCHING TEST CIRCUIT AND WAVEFORMS c..
::l
o
CJ
...
o
c.
o
TEXAS . . 3-103
INSTRUMENTS
HCPL2730. HCPL2731
TEST PER CHANNEL RCC
r
I
....-+ r---~~----~'--V~5'V
(See Note Al
I
I ____-i-....---OUTPUT
I
I
I
I
L..
~------~~---WLr------~~--------GND
GENERATOR
TEST CIRCUIT
10V--7:90
GENERATOR 1 % 90%~ dVCM = 8 V
oV I I 10%
o
't:J
10%
-+I
I I
J+-tr
I I
tf-+l 14-
dt
t r =8nsTYP
tr or tf
r+ tf = 8 ns TYP
o
(')
o OUTPUT---_~c. _-------5 V
C
't:J SWITCH AT A: IF - 0
CD
"'l
en
OUTPUT-----------~VOL
en SWITCH AT B: IF - 1.6 mA
o WAVEFORMS
Dr
r+
o NOTE A: In applications where dVldt may exceed 50,000 VI~s (such as static dischargel a series resistor, Ree, should be included to
-
"'l
en protect the detector Ie from destructively high surge currents. The recommended value is:
Ree =
1
0.15 IF (mAl
kll
3·104 TEXAS . "

INSTRUMENTS
POST OFFICE BOX 655303 • DALLAS .. TeXAS 75265
HCPL2730, HCPL2731
HCPl2730 HCPL2731
CURRENT TRANSFER CHARACTERISTICS CURRENT TRANSFER CHARACTERISTICS
80 80
Vee - 4.S V IF-SmA IF - sm~, Vee - 4.S V
70 TA - 2Soe - f-IF - 4 m~\ 70 I-IF - 4 m~,\ TA - 2Soe
c( 60
IF - 3 m~~ c( 60
IF - 3 mA, l':
V ~
IF - 2 mA"
~
l~
E E
I IF - 1 m~~ I
E
~
"
CJ
SO
40
IF - O.S m~\\,
l\ \r.
E
!
:;
CJ
SO
40
'"
t::- ...-""
~V~ l..-- I-
~ t:::=-
;
S- I;,V t. ;
S- ft I...- I--
IF-2mA
..
30 L...- 30
"I "I
J~ Jf:
0 0
\ IF - 1.S mA
9 20 9 20
10
~t/
~t::- ,\
... 10
1 V-
I
IF - 1 mA-
I I
o
o o.S 1.S 2
o If
o o.S 1.S
IF - o.s mA
I' 1
2
1
2.S
YO-Output Voltage-V YO-Output Voltage-V Ii)
FIGURE 3 FIGURE 4
...o...
CtI
INPUT DIODE FORWARD CURRENT OUTPUT CURRENT '0
20
vs
FORWARD VOLTAGE
100
vs
INPUT DIODE FORWARD CURRENT -...
.!
( /j
Vee = 4.S V 70 Vce - 4.S V Q)

HePL2731
18
TA - 2SoC 40 Vo - 0.4 V
HCPL2730
c.
~
16 TA - 2soe
c( ./ o
E 14 ~ 20 (J
.!.
I:
~ 12 E
I 10
7
/
...
o
Q,
~ o
"
CJ 10 8 4
"E 7
IV
~
0
8 ;; 2
II.
I 6 ~ 1
~
9 0 .7
4 0.4
2 0.2
o )
0.1
III
o o.S 1.S 2 0.10.20.40.71 2 4 710 20 40 100
VF-Forward Voltage-V IF-Input Diode Forward Current-mA
FIGURE S FIGURE 6
TEXAS ~ 3-105
INSTRUMENTS
HCPL2730, HCPL2731
HCPL2730
CURRENT TRANSFER RATIO RELATIVE CURRENT TRANSFER RATIO
vs vs
C.J
INPUT DIODE FORWARD CURRENT FREE-AIR TEMPERATURE
°It>
N 1.05
VCC - 4.5 V I VCC - 4.5 V
Va - 0.4 V
~ r-- IF - 1.6mA
'#.
I
..,0
TA - 25°C
---f-... Va - 0.4 V
.
a:: ""-
~c
l!
l-
E
~
2000
1800
1600
1400
1200
II
I
"-
HCPL2731
""
2
~
.~
£o
0.95
0.90
" "'" '"
"
C.J
I
1000 ~
13
a:: 800
I- ~ 0.85
C.J 600 ~~rL27~0 ~ c
400 l!
200
1111 I "= I-
o I 1111 I 0.80
0 0.1 0.2 0.40.71 2 4 710 20 40 o 10 20 30 40 50 60 70 80
"0
..... IF-Input Diode Forward Current-mA TA-Free-Air Temperature- °C
0
(')
0 FIGURE 7 FIGURE 8
I:
"0 HCPL2731
CD
... RELATIVE CURRENT TRANSFER RATIO PROPAGATION DELAY TIMES
en vs vs
C.J FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE
Ui °It>
N 1.05 10
0 I ............. VCC = 4.5 V VCC - 5 V
ii)
.....
... ..
0
oct
I-
~ "', IF = 0.5 mA
Va - 0.4 V .
9
8
IF - 1.6 mA
RL - 2.2 kG
- ...
'"-
en
" "-
I
" 7
---
iii tpLH HCPL2731 -
> E ·1 --t--1
2
. 0.95 j:: 6
'" '\. . .----..-

-----
>-
> .!!
5
~ ---+-
-
c 1 T
"ii
a::
0
0.90
\
c
.2
lOOJ
4 - tpLH HCPL2730 _
I I I
~
a:: ..... 3 tPHL HCPL2730_
~
\ ~
I l
~c 0.85 II. 2
l! tpHL HCPL2731
l-
E 0.80 o
1 1 1-
~ o 10 20 30 40 50 60 70 80 o 10 20 30 40 50 60 70 80
"
C.J
TA-Free-Air Temperature- °C TA -Free-Air Temperature- °C
FIGURE 9 FIGURE 10
3-106 TEXAS " ,

INSTRUMENTS
HCPL2730. HCPL2731
HCPL2731
PROPAGATION DELAY TIMES PROPAGATION DELAY TIMES
vs vs
5 10
Vcc - 5 V VCC - 5 V
------
9 IF - 0.5 mA
'F - 12 mA L---- tPHL
~ 4
RL - 270!l_ ~I I - .... 8 RL - 4.7 k!l
...
I trLH-IHCPL2~ I
..E ./
V V tPLH
-
OJ
7
I---"
~>- 3 I---t-1 j:: 6
V -" V
IV
;!l I-- I---" I I I

tPLH-HCPL2731 f--
>-
IV
Oi
C
5 t:- V
..,0
c 2 c
4
''I" ~
I--
IV
'"'"
•
3
Q. Q.
E
Q.
E
Q. 2
tPHL -HCPL2730
tPHL -HCPL2731
o o
o 10 20 30 40 50 60 70 80 o 10 20 30 40 50 60 70 80 ~
TA-Free-Air Temperature- °c TA -Free-Air Temperature- °c ....cao
FIGURE 11 FIGURE 12
"0
-...
CI)
CI)
~
c.
:::s
o
o
....oc.
o
TEXAS . " 3-107

INSTRUMENTS
•
o
"'C
.-+
o
n
o
I:
"'C
CD
...
UI
UI
o
Q)
.-+
...
o
-
UI
3-108
MCT2, MCT2E
OPTOCOUPLERS
D2731, MARCH 1983

• Gallium Arsenide Diode Infrared Source • High-Voltage Electrical Isolation ... 1.5-kV
Optically Coupled to a Silicon N-P-N or 3.55-kV Rating
Phototransistor
• Plastic Dual-In-Line Package
• High-Speed Switching: tr = 5 p.s, tf = 5 p's
• Base Lead Provided for Conventional Typical
Transistor Biasing
• Designed to be Interchangeable with General
Instruments MCT2 and MCT2E
mechanical data
The package consists of a gallium arsenide infrared-emitting diode and an n-p-n silicon phototransistor mounted on
a 6-lead frame encapsulated within an electrically nonconductive plastic compound. The case will withstand soldering
conditions, Unit weight is approximately 0.52 grams.
940(D3701~
838(03301
g~:~~, I -,-i~~-
000 NOTES:
'i 'i ''''''''''" :::,:,~D.~O a. Leads are within 0,13 mm (0.005 inch) radius of
b. Pin 1 Identified by index dot.
...en
1. Anode
2. Ca~hode
}
Infrared-emitting
diode
...o
CO
3. No internal connection '0
~
900
1j../
0305(OOl~)~
17810070).,
0203(0008) 051(0020)
3,B1(01501
~
-~~~=:
.jPL~ES
~jL ~
2,54 (0.100) T.P.
--l~1.01(O'<140)
--, r- MIN
0.381(0.015)
6 PLACES
4. Emitter
5. Collector
6. Base
}
Phototransistor
-...
..!!!
en
(See NotfIa)
~
Co
FALLS WITHIN JEDEC MO-OO1AM DIMENSIONS ::::J
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES o
o
Input-to-Output Voltage: MCT2 ...... ,.,." ............. , . . . . . . . . . . . . . . . . . . . . . . . , .. ±1.5 kV
...oc.
MCT2E ........... ,', .. , .............. , .. , .............. . ±3.55 kV o
Collector-Base Voltage ., .. , ... ,., ...... " ........ , .. , ....... , .. , .......... , .. , ... ,. 70 V
Collector-Emitter Voltage (See Note 1) ....... ,' , , , . , ...... , . , , .. , ........ , . , . , .. , . , , , . .. 30 V
Emitter-Collector Voltage ., ......... " .. ,." .......... , .............. , , .. , , . , . , . . . . . .. 7 V
Emitter-Base Voltage .... , .......... ,." .. , .......... , ... ,., ....... , ...... , " , . . . . . . . 7 V
Input-Diode Reverse Voltage ... " .......... " . , ' , ........ ,',., .... " . . . . . . . . . . . . . . . 3 V
Input-Diode Continuous Forward Current ..... , , , . , . , . . . . . . . . . . . . . . . . . . . . , ........... , .. 60 mA
Input-Diode Peak Forward Current (t w '" 1 ns. PRF '" 300 Hz) , ...... , ...... , .. , .... ,...... 3 A
Continuous Power Dissipation at (or below) 25 DC Free-Air Temperature
Infrared-Emitting Diode (See Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ,., 200 mW
Phototransistor (See Note 2) " . , . , ' , . . . . . . . . . . . . . . . . . , " , . , ........... ,........ 200 mW
Total. Infrared-Emitting Diode plus Phototransistor (See Note 3) " , . , .... , .. , ... , ..... " . 250 mW
Operating Free-Air Temperature Range ....... , .. , ..... ,., ..... ,., ...... ,...... - 55 DC to 100°C
Storage Temperature Range .. ,.,., ..... ,', ....... , .... , ........ , .. " . . . . . . . - 5 5 DC to 1 50°C
Lead Temperature 1,6 mm (1/16 inch) from Case for 10 Seconds ....... ,.,., ... , .. , .... ,.... 260 DC
NOTES: 1. This value applies when the base-emitter diode is open-circuited.
2. Derate linearly to 10QoC free-air temperature at the rate of 2.67 mW/oC.
PRODUCTION DATA documents contain information Copyright © 1983. Texas Instruments Incorporated
current as of publication data. Products conform to
specifications per the terms of Texas Instruments TEXAS " , 3-109
:~~~~:~~i~ai~:I~~e ~:~~:i:: :.~O::;:~:.:~~S not INSTRUMENTS
MCT2. MCT2E
OPTOCOUPLERS

MCT2, MCT2E
MIN TYP MAX
Collector-Base IC - 10 ~A, IE - 0,
VIBRICBO 70 V
Collector-Emitter IC - 1 rnA, IB - 0,
VIBRICEO 30 V
Emitter-Collector IE - 100 ~A, IB - 0,
VIBRIECO 7 V
Input Diode Static
IR VR = 3 V 10 ~A
Reverse Current
Phototransistor VCE-10V, IF - 10 rnA,
On-State 2 5 rnA
Operation IB = 0
IClonl Collector
Photodiode VCB - 10 V, IF - 10 rnA,
Current 20 ~A
Operation IE = 0
Phototransistor VCE - 10 V, IF - 0
Off-State 1 50
Operation IB = 0
ICloffl Collector nA
Photodiode
E
VCB - 10 V, IF = 0,
Current 0.1 20
Operation IE = 0
hFE
Transistor Static
Forward Current
VCE = 5 V,
IC = 100 ~A,
I MCT2 250
o
'C
Transfer Ratio
Input Diode Static
IF =0 I MCT2E 100 300
r+ VF IF = 20 rnA 1.25 1.5 V

Forward Voltage
o Collector-Emitter IC = 2 rnA, IF = 16 rnA,
(")
0.25 4 V
o VCElsatl Saturation Voltage 18 = 0
I:
'C Vin-out = ± 1 .5 kV for MCT2
Input-to-Output
(;" 10 11
...
CII
'to Internal Resistance
See Note 4
±3.55 kV for MCT2E Il
Input-to-Output Yin-out - 0, f - 1 MHz,

Cio 1 pF
en
o
Capacitance See note 4
or
r+
NOTE 4: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.
...o switching characteristics at 25°C free-air temperature
-CII
tr
PARAMETER
Rise Time Phototransistor VCC = 10 V,

TEST CONDITIONS
IClonl = 2 rnA, RL = 100 Il,

MIN
MCT2, MCT2E
TYP MAX
UNIT
5 ~s
tf Fall Time Operation See Test Circuit A of Figure 1
tr Rise Time Photodiode VCC - 10 V, IClon) - 20 ~A, RL - 1 kll,
1 ~
tf Fall Time Operation See Test Circuit 8 of Figure 1
3-110
TEXAS •
INSTRUMENTS
POST OFFice BOX 655303 • DALLAS, TeXAS 75265
Mel2. MCl2E
OPlOCOUPLERS

le(an) "" 2 rnA (Test Circuit A) or
le(an) = 20 J.lA (Test Circuit B)
INPUT
47 n o~ L
r-I'-.....-o OUTPUT
(See Note b)
OUTPUT L - _ -.....-o OUTPUT
AL=100n
(See Note b)

NOTES: a. The input waveform is suppljed by a generator with the following characteristics: Zout "" 50 n, tr";;; 15 ns, duty cycle""" 1%,
II
tw == 100 /-ls.
b. The output waveform is monitored on an oscilloscope with the following characteristics: tr";;; 12 ns, Rin *" 1 MD, C in ~ 20 pF
FIGURE 1-SWITCHING TIMES
...
CIl
~
Co
:l
o
o
o
.....
Co
o
TEXAS • 3-111
INSTRUMENTS
MCl2, MCl2E
OPlOCOUPLERS

vs vs
INPUT·DIODE FORWARD CURRENT COLLECTOR·EMITTER VOLTAGE
100 60
40
F:VCE;' 10v,
\~ 18'=0 I
18- 0
~ TA = 25°C
« h~ -25~C / «
50
\ See Note 5
f--
E 10 E \~
\~
.Lc: 4 ~40
U
~
:I
~
:I \~
r~~
U 30
j
Q
1;;
..!!
'0
0.4 j
;3 20
\f'=40 mA
,!JI
" A
*~-
~---=...~-s>
- --- -
u IF=30 mA ~ D, -1--
I I ~ !,SlfJ,qr,
9 0.1 9
10
-IF=20 mA .... '~__
0.04
IF=10mA
0.01
IJ o
o 0.1 0.4 4 10 40 100 o 2 4 6 8 10 12 14 16 18 20
...o
"0 I F"':Forward Current-rnA
FIGURE 2
VCE-Coliector·Emitter Voltage-V
FIGURE 3
n
o
I: RELATIVE ON·STATE COLLECTOR CURRENT
"0
vs
...CD
en u FREE·AIR TEMPERATURE
o~ 1.6
VCE = 0.4 V to 10 V
en "
o
...oro ..
~ 1.4
: 1.2
18= 0
IF=10mA
See Note 6
... :I
~S
~ 1.0
~ V f"-.. I"-....
.~ 0.8
Qj
a: 0.6
V
~
a~ 0.4
o
-75 -50 -25 o 25 50 75 100 125
TA-Free·Air Temperature-oC
FIGURE4
NOTES: 5. Pulse operation of input diode is required for operation beyond limits shown by dotted lines.
6. These parameters were measured using pulse techniques. tw "'" 1 ms, duty cycle" 2%.
3-112 TEXAS . "

INSTRUMENTS
MOC3009 THRU MOC3012
D2998. AUGUST 1985
• 250 V Phototriac Driver Output • Directly Interchangeable with

Motorola MOC3009. MOC3010.
• Gallium Arsenide Diode Infrared Source and
MOC3011. and MOC3012
Optically Coupled Silicon Triac Driver
(Bilateral Switch) • Direct Replacements for:
TRW Optron OP13009. OP13010.
OP13011. and OP13012;
• High Isolation ... 7500 V Peak General Instrument MCP3009.
MCP3010. MCP3011;
• Output Driver Designed for 11 5 V AC
General Electric GE3009. GE3010.
• Standard 6-Pin Plastic DIP GE3011. and GE3012
mechanical
Each device consists of a gallium arsenide infrared emitting diode optically coupled to a silicon phototriac
mounted on a 6-pin lead frame encapsulated within an electrically nonconductive plastic compound. The
case will withstand soldering temperature with no deformation and device performance characteristics
remain stable when operated in high-humidity conditions.
9,40 (O'3701~
8,38 (O.330)
000
II
-..
,:..-..::':0 o0 0
U)
...o
CO
'0
-.
(Sse Note CI
U)
5.46 (0 215)
~I 6 PLACES U)
0_
~ ~.7
SEATING PLANE
~ J
I-----*---- --I r-'
~
C.
\
1~0
0 30S 10 012:1
203 10 008: l 0 51 10.:~:~ 10.090H] JL 01100401
MIN
:::I
o
(J
3,81 (0 '50)
3,17 (0.1251
1,27 [O.OSC}
4 PLACES
2,54 10.1001 T.P._

0,534 (0.0211
0,381 (0.0151
6 PLACES
...
o
c.
(See Note AI
FALLS WITHIN JEDEC MO-COl AM DIMENSIONS

o
NOTES: A. Leads are within 0.13 mm (0.005 inch) radius of true position (T.P.) with maximum material
B. Pin 1 identified by index dot.
C. Terminal connections:
1.
2.
Anode
Cathode } Infrared~emitting
diode
4. Main terminal
5. Triac
IDO
6. Main
substrate
NOT connectl
terminal
} Phototriac

CP·7
TEXAS . " 3-113
:'~~~:~~i~8i~:I~~~ ~!:~:~ti:; :I~o:=:::t:~~s not INSTRUMENTS

Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) . . . . . . . . . . . . . . . 7.5 kV
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 3 V
Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 rnA
Output repetitive peak off-state voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 250 V
Output on-state current, total rms value (50-60 Hz, full sine wave):
TA= 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 rnA
T A = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 rnA
Output driver nonrepetitive peak on-state current
(tw = 10 ms, duty cycle = 10%, see Figure 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1.2 A
Continuous power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 100 mW
Phototriac (see Note 3) .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 300 mW
Total device (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 330 mW
Operating junction temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 40 DC to 100 DC
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . 260 DC
NOTES: 1. Input~to~output peak voltage is the internal device dielectric breakdown rating.
3. Derate linearly to 10QoC free-air temperature at the rate of 4 mW/oC.
4. Derate linearly to 100°C free-air temperature at the rate of 4.4 mW/oe.
o
't:I electrical characteristics at 25°C free-air temperature (unless otherwise noted)
r+
o PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
"
o
s::::
IR
VF
Static reverse current
Static forward voltage
VR - 3 V
IF ~ 10 mA
0.05
1.2
100
1.5
~A
V
't:I IDRM Repetitive off-state current, either direction VDRM ~ 250 V, See Note 5 10 100 nA
CD
... dv/dt Critical rate of rise of off-state voltage See Figure 1 12 V/~s
til dv/dtlcl Critical rate of rise of commutating voltage 10 ~ 1 5 mA, See Figure 1 0.15 V/~s
MOC3009 15 30
Cii Input trigger current, MOC3010 8 15
o 1FT
either direction MOC3011
Output supply voltage ~ 3 V
5 10
mA
or
r+ MOC3012 5
...o VTM Peak on-state voltage, either direction ITM - 100 mA 1.8 3 V
-
til IH Holding current, either direction
NOTE 5: Test voltage must be applied within dv/dt rating.

100 ~A
3-114 TEXAS •
INSTRUMENTS
Vee
(1)
---+ Vin = 30 V rms

---+
(2)
INPUT 10 k{J
(See Note 6)
NOTE 6: The critical rate of rise of off~state voltage, dv/dt, is measured with the input at 0 volts. The frequency of Vin is increased until
the phototriac just turns on. This frequency is then used to calculate the dv/dt according to the formula:
dv/dt = 2 ~7rfVin
The critical rate of rise of commutating voltage, dv/dt{c), is measured by applying occasional 5·volt pulses to the input and increasing
the frequency of Vin until the phototriac stays on (latches) after the input pulse has ceased. With no further input pulses, the
frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then
be used to calculate the dv/dt(c) according to the formula shown above.
•
-...o
I I)
...
CO
(5
-...
FIGURE 1. CRITICAL RATE OF RISE TEST CIRCUIT II)
I I)
Q)
EMITTING DIODE NORMALIZED TRIGGER CURRENT
vs
C.
:::J
FREE-AIR TEMPERATURE ON-STATE CHARACTERISTICS o
(,)
«
1.4
«
800
I
Output tw = 80 1'5
600 rlF =20 rnA
I I
/ ...
o
Q.
E 1.3 E V o
...
I ...
I
c
f = 60 Hz
400 TA - 25 DC
/
c
~ 1.2
~
~ /
1\
::s u 200
U
~ 1.1
!co
0 /
cii
" /
.~
r= .:
'tJ ~ 0 -200
.~ 1.0
fti
.,
-"
co
Q. -400 /
E
00.9
I V
z :!:
,to - 600
/
0.8
-50 -25 o 25 50 75 100
-800
-6
/ -4 -2 o 2 4 6
TA-Free-Air Ternperature- DC VTM-Peak On-State Voltage-V
FIGURE 2 FIGURE 3
TEXAS
INSTRUMENTS
-II 3-115
CRITICAL RATE OF RISE OF OUTPUT VOLTAGE CRITICAL RATE OF RISE OF OUTPUT VOLTAGE
vs vs
LOAD RESISTANCE FREE·AIR TEMPERATURE
14 0.24 12 0.24
_ _ _ ~V/dt
TA ~ 25"C
See Figure 1
OFF· STATE 10
1\ dv/dt(cl ._
0.20
~
12 0.20 ~ See Figure 1 VI
"-
VI
"- :> III
~ :>
:> > 8 0.16 ~
~ 10
,- 0.16
-6
">
I
.. "C
'"---
-6 ">
.... " ~
"C
"C
"> "> Ii ........ <"
irQ
"C
"C Cl "0 6 Ii
-<..\~G ...... ...... 0.12·r
t--. ........~
.5
"
OJ 8 ~u-<..p. ...... OJ
0.12 :;
.,
~
t-: -l."- .570 .,
CO~.... ~
~ E
cii 4
; f)
0.08 ~
~
~
(5 E E
6
V
--dv/dt
0.08 u
0
2 -- 0.04
o
u
-; -?V/d~(CI
4 0.04 o o
o 0.4 0.8 1.2 1.6 2 25 50 75 100
RL - load Resistance - kl! T A - Free·Air Temperature - °C
o
"0 FIGURE 4 FIGURE 5
.....
o
(")
RMS APPLIED VOLTAGE
o
c: (FOR dv/dt(cl ~ 0.15 V//J-sl
vs
"0
(j) FREQUENCY
...
en 1000
I=RL=lkll
400 f:TA 25°C
en > F- See Figure 1
o I
~V/dt = 2J2"fVin
Qi .,"
.....
o -='"0 100
... >
-
en "0
.!!!
is.
0-
40
~0;-
ct
rn
10
~ ~
:iE
a: 0
I --'.s-
:>"
4 I- f'4.~
I~o!'
1·"'"
100 400 1 k 4 k 10 k
ITll&.."
40 k 100 k
f-Frequency of Applied Voltage-Hz
FIGURE 6
3-116 TEXAS ~
INSTRUMENTS
MAXIMUM RATINGS
NONREPETITIVE PEAK ON-STATE CURRENT

vs
« PULSE DURATION
T3
E I''''~~I ~ IJ~! ~III~'" r"'I'" I I r"'I'"
~
:;
U
2l
en'" 2
-
c
o
-"
r--.ro
.,'"
C>.
" ......
:~
"
Co
~
c:
o
&I
Z
I
~IIIIUIII 11111., 11111,.
~ 0 11111"
-
: 0.01 0.1 10 100
tw - Pulse Duration - ms
...
I I)
FIGURE 7
...
~
o
o
TYPICAL APPLICATIONS
-...
II)
I I)
.!!?
MOC3009-MOC30 12 Co
:J
Vcc _ _-'lR
",in"-"I.;.:.11+--, o
-
(.)
120 V.
...
o
c..
60 Hz o
121
FIGURE 8. RESISTIVE LOAD
INSTRUMENTS
TEXAS "-!1 3-117
MOC3009-MOC3012
vCC _ _...,R""in,..,....:Ic..11+--.
121
- 141
120 V.
60 Hz
IGT' 15 rnA
FIGURE 9. INDUCTIVE LOAD WITH SENSITIVE-GATE TRIAC
Eo MOC3009-MOC30 12
'0 Rin 111

r+ Vce --J\N"""':'-'-t----,
o
(')
o
r::
"2-
...
CD
en 121
- L--t-1_41_ _-+__--'
120 V.
60 Hz
Cii
o 15 rnA<IGT<50 rnA
Dr
r+
FIGURE 10. INDUCTIVE LOAD WITH NONSENSITIVE-GATE TRIAC
...o
-
en
3-118 TEXAS . .
INSTRUMENTS
MOC3D2D THRU MOC3D23
D2899, OCTOBER 1986
• 400-V Phototriac Driver Output • Directly Interchangeable with

Motorola MOC3020. MOC3021.
• Gallium Arsenide Diode Infrared Source and MOC3022. and MOC3023
Optically Coupled Silicon Triac Driver .
(Bilateral Switchl • Direct Replacements for:
TRW Optron OP13020. OP13021.
OP13022. and OP13023;
• High Isolation ... 7500 V Peak General Instrument MCP3020.
MCP3021. MCP3022;
• Output Driver Designed for 220 V AC General Electric GE3020. GE3021.
• Standard 6-Pin Plastic DIP GE3022. and GE3023
mechanical
mounted on a 6-pin lead frame encapsulated within an electrically nonconductive plastic compound, The
9,40 (0'370)~
8,38 (0.330)
.::.,,:,0
000
-...
t /)
,:,!", ...
~
o
ot/)
o0 CD (Se. No.e C)
-...
5,46 (0.2151 t/)
2,92 (0.1151 ffiJl'786(~:J.g~SMAX
~
I \ C.
:::::I
\
7
/
- SEATING PLANE ~ o
(J
IJ-
105
\1 0,305 (0.012I T 1,7810.0701 T .....J L 1,01 (0.0401 ...
o
1
~~0'203
90 0 (0.008ii
3,~1
0,51 (0.020)
(0.150)
3,17 (0.125)
~:~~ :g:g~g: ]
4 PLACES
2,54 (0.100) T.P.

JL
I I MIN
0,534 (0.021)
0,381 (0.015)
6 PLACES
c.
o
ISe. No •• A)
FALLS WITHIN JEDEC MO·OOl AM DIMENSIONS
NOTES: A. Leads are within 0,13 mm (0.005 inch) radius of true position (T.P.) with maximum material
1. Anode } Infrared-emitting
2. Cathode diode
4. Main terminal
5. Triac Substrate
} Photot,iac
(DO NOT connect)
6. Main terminal
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES CP·7
specificatiol1s per the terms of TBxas Instruments TEXAS • 3-119
:~~~~:~~i~ai~:1~1~ ~!~~~ti:f l!IO::;::::~:~~S not INSTRUMENTS
absolute maximum ratings at 25 °C free-air temperature (unless otherwise noted)

Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) ... . . . . . . . . . . .. 7.5 kV
Input diode forward current, continuous .......... '..................... , . . . . . . .. 50 mA
TA= 25 DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
T A = 70 DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 mA
(t w = 10 ms, duty cycle = 10%, see Figure 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1.2 A
Continuous power dissipation at (or below) 25 DC free-air temperature:
Operating junction temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. _40DC to 100 DC
Storage temperature range ......................................... - 40 DC to 150 DC
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds ...................... 260°C
NOTES: 1. Input~to-output peak voltage is the interna~ device dielectric breakdown rating.
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/oe.
o
"S electrical characteristics at 25°C free-air temperature (unless otherwise noted)
n
o IR Static reverse current VR - 3 V 0.05 100 ~A
I: VF Static forward voltage IF = 10 mA 1.2 1.5 V
"0 Repetitive off-state current, either direction VDRM - 400 V, See Note 5 10 100 nA
IDRM
CD
... dv/dt Critical rate of rise of off-state voltage See Figure 1 100 V/~s
t/) dv/dt(c) Critical rate of rise of com mutating voltage 10 - 1 5 mA, See Figure 1 0.15 V/~s
ur
o 1FT
Input trigger current,
MOC3020
MOC3021
Output supply voltage = 3V
15
8
30
15
rnA
either direction MOC3022 5 10
ii)
r+ MOC3023 3 5
...
o VTM Peak on-state voltage, either direction ITM = 100 mA 1.4 3 V
-
t/) IH Holding current, either direction
NOTE 5: Test voltage must be applied at a rate no higher than 12 V/~s.

100 ~A
3-120 TEXAS . "

INSTRUMENTS

Vee
12)
- Vin = 30 V rms
10 k!l
INPUT
ISee Note 6)
NOTE 6: The critical rate of rise of off-state voltage, dv/dt, is measured with the input at 0 volts. The frequency of Vin is increased until
The critical rate of rise of com mutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and increasing
II
...
(/)
frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then o
+oJ
be used to calculate the dv/dt(c) according to the formula shown above.
ctI
FIGURE 1. CRITICAL RATE OF RISE TEST CIRCUIT "0
-...
(/)
( /)
EMITTING DIODE NORMALIZED TRIGGER CURRENT ~

vs Co
FREE-AIR TEMPERATURE ON-STATE CHARACTERISTICS ::J
1.4 800
o
U
1.3
<t 600
Output tw ~ 800
IF ~ 20 rnA
ILS
I o
+oJ
C-
f-
..!:!-
I
E
~
I
400
f ~ 60 Hz
TA ~ 25°C
/ O
"~
E
~
:;
1.2
U" 200 /
U
iii
'"
.~
1.1
2:!co
cil 0 /
.=
'tl
"----- -- o
i:.
"" -200
/
"
.~
0;
E
1.0
~
co
"I -400
D.. V
0
z 0.9
~
.t-
-600 /
0.8
-50 -25 o 25 50 75 100
-800
-3
/ -2 -1 o 2 3
TA-free-Air Temperature- °C VTM - Peak On-State Voltage - V
FIGURE 2 FIGURE 3
TEXAS
INSTRUMENTS
-1!1 3-121
OPTOCOUPLERS/OPTOISO LATORS
MAXIMUM RATINGS

vs
PULSE DURATION
~ 3 11111"1111111I1U""~11 I ~"111" ~"'I·'II
I
~
c: TA = 25°C
l!!
:;
(,)
!"
(/)
2
.:
o
.. r-..
"'"
"
0.. r-..
:s"> 1
r--..t--
"l!!
c.
Eo
c:
o
2
I
:!E
.t:- 0 ~1I1~1I I ~'II""
(/)
\"Jill I I 1"",,,1,
10-"
...o
'0
0.01 0.1
tw-Pulse Duration-ms
100
n
o FIGURE 4
!:
'0
...
CD
VI
VI
2-
...o
Q) MOC3020-MOC3023
... Rin 11) (6) 180 Il
-
VI vcc ---AoAI'.--f--.
(2)
- (4)
220 V. 60 Hz
3-122
TEXAS •
INSTRUMENTS
OPTOCOUPLERSJOPTOISOLATORS
MOC3020-MOC3023
Vcc ---'W'I.--+---,
121 141
IGT:S 15 rnA
FIGURE 6_ INDUCTIVE LOAD WITH SENSITIVE-GATE TRIAC
Rin 111
Vcc --_''N.....--+---,
MOC3020-MOC3023
•
-...
(/)
...ca
o
"0
121 141
220 V. 60 Hz
-...
(/)
( /)
Q)
Q.
::::J
15 rnA < IGT < 50 rnA o
(J
...oc.
o
TEXAS • 3-123
INSTRUMENTS
o
....
"C
o
n
o
I:
"C
...
CD
til
til
o
or
....
...
o
-
til
3-124
OPIBO 12. OPIBO 13. OPIBO 14. OPIBO 15
D2961. SEPTEMBER 1986
• Gallium Arsenide Emitter Optically Coupled • Directly Interchangeable with TRW Optron
to a Photo-Detector Integrated Circuit OP18012, OP18013, OP18014, OPI8015
• Output Compatible with TTL/LSTTL Logic • Standard 6-Pin Dual-In-Line Package

Levels
• Schmitt Trigger Stage with Hysteresis for High
• Fan-Out of 8 TTL Loads Noise Immunity
• Four Output Versions: • 200-kilobaud Data Rate

OPI8012 Buffer Totem-Pole
• 70-ns Maximum Rise Time or Fall Time
OPI8013 Buffer Open-Collector
OPI8014 Inverter Totem-Pole • UL Recognized - File Number E65085
OPI8015 Inverter Open-Collector
• High-Voltage Electrical Isolation. 3540-V
Peak Rating
mechanical data
Each device consists of a gallium arsenide infrared emitting diode and a silicon monolithic photo-detector
integrated circuit. The device is mounted on a 6-pin lead frame encapsulated within an electrically
nonconductive plastic compound. The photo-detector Ie incorporates a photodiode, a linear amplifier, a •
Schmitt Trigger hysteresis stage, and a digital output stage.
...oen
OPI8012
...co
9,40 ( O . 3 7 0 1 - t - - - l
838 10330, I S'2 S'2 ~ I
~ ---+ (5
en
---+
-...
INDEX DOT
(SeeNOle8)~ 4
6.61 (0.2601
(2) 0 0 en
[
6.0910.240) (See NoteCl 2
~
Co
:::::I
o
--+ (,)
--+ ...c..
o
2
o
FALLS WITHIN JEDEC MO 001 AM DIMENSIONS
NOTES: A. Leads are within 0,13 mm (0.005 inch) radius of true position (T.P.) with
maximum material condition and unit installed.
1. Anode } 4. Output } Photo-

2. Cathode Infrared-emitting 5. GND detector
3. No internal connection diode 6. Supply Voltage, Vee Ie
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES cpo 7
Copyright © 1986, Texas Instruments Incorporated

PRODUCTION DATA documents contain information
~~~~~:~~i~ai~:I~~e ~!:~::i:f ~Io:::~~:~~ not INSTRUMENTS
OP18012, OP18013, OP18014, OPI8015
schematic diagrams
(6)
r - -....-VCC (6)
,-----VCC
ANODE)'" ~ ANODE)'" ~ (4)

OUTPUT
-+ -+
(2) (2)
CATHODE ' - - - - - -....---<~-'- GND CATHODE '------~-__<~-GND
OPI8012 BUFFER WITH OPI8013 BUFFER WITH

TOTEM-POLE OUTPUT OPEN-COLLECTOR OUTPUT
(6)
,----VCC
o
"C
.-+
o
n ANODE)'" ~ ANODE)(1)
OUTPUT
o
s::: -+
"C -+ -+
...
CD
C/l CATHODE
(2)
' - - - - - -....---<~GND CATHODE
(2)
'----------~--__<~-GND
OPI8014 INVERTER WITH OPI8015 INVERTER WITH

C/l TOTEM-POLE OUTPUT OPEN-COLLECTOR OUTPUT
o
Q)
.-+ absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
o... Supply voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 V
C/l
Peak input-to-output isolation voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3540 V
Output voltage (OPI8013, OP18015) . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . .. 35 V
Input diode continuous forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . _____ . _ ... _ _ _ 25 mA
Continuous total power dissipation at (or below) 25 DC free-air temperature:
Input diode (see Note 2) ____ . ________ ...... ____ . _____ ... ___ ......... _ .. 100 mW
Output IC (see Note 3) _________________ . ______________ . ____ . _ ....... _ _ 200 mW
Total (input diode plus output IC, see Note 4) _ . _ ... ___________ . _____________ 250 mW
Duration of output short to VCC or GND (OPI8012, OP18014) . _____ ..... _____ . __ .... __ . 1 s
Duration of output short toVCC (OPI8013, OP18015) .... ____ .. _ . __ .. _. __ ... __ .. ___ . __ 1 s
Storage temperature range ........ _ ......... _ . . . . . . . . . . . . . . . - 55 DC to 1 50 DC
Operating free-air temperature range ____ ......... _ .. _ . __ ........ __ .. _. - 55 DC to 100 DC
Lead temperature 1,6 mm (1/16 inch) from the case for 1 second . _ .. _ . _ . _ . _ . _ ..... __ 260 D C
NOTES: 1. This rating applies between the input leads (pins 1 and 2) shorted together and the output. Vee. and GND leads (pins 4,
5, and 6) shorted together.
2. Derate linearly to 10QoC free-air temperature at the rate of 1.33 mW/oC
3. Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/oC
4. Derate linearly to 100°C free-air temperature at the rate of 3.33 mW/oC
3-126 TEXAS . "

INSTRUMENTS
OP18D12. OPI8D14

OPI8012
OPI8014
MIN NOM MAX UNIT
Supply voltage, Vee 4.75 5 5.25 V
High-level output current, IOH -800 "A
Low-level output current, IOL 12.8 rnA
Operating free-air temperature, T A -40 70 °e
electrical characteristics. TA - - 40 °C to 70°C (unless otherwise noted)

OPI8012 OPI8014
VF Input diode forward voltage IF ~ 10 rnA, TA ~ 25°e 1.2 1.5 1.2 1.5 V
IR Input diode reverse current VR -3 V, TA - 25°e 100 100 "A
Input diode positive-going
IFT+ Vee ~ 5 V 1.5 10 1.5 10 rnA
threshold current
1FT +/IFT- Hysteresis ratio Vee = 5 V 1.4 1.4
VOH
VOL
High-level output voltage
Low-level output voltage

Vee - 4.75 V,
IOH
Vee
IOL =
=
4.75 V, IF
IF - 0
-800 "A IF - 10 rnA
0
12.8 rnA IF - 10 rnA
2.4 3.2
0.2 0.4
2.4 3.2
0.2 0.4
V
V
&I
-
Vee - 5.25 V, IF - 0 30 50 100 ...
I /)
lOS
lee
Short-circuit output current
Supply current
Vo
Vee
=
=
0
5.25 V
IF - 10 rnA
IF - 0
-30 -50
8
-100
15 4 15
rnA
rnA
...o
~
IF = 10 rnA 10 15 9 15 o
-...
I/)
tTypical values ;re at T A = 25°e.
I/)
switching characteristics. T A (I)

OPI8012 OPI8014
UNIT
c..
::::J
tr Rise time
MIN TYP
25
MAX
70
MIN TYP
25
MAX
70 ns
o
o
tf Fall time
Propagation delay time, Vee = 5 V, IF = 10 rnA, See Figure 1
9 70 9 70 ns
...
o
Q.
tpLH
low-to-high-Ievel output
Propagation delay time,
Output load: 8 TTL equivalent circuits
1 5 3 5 "s
o
tpHL 3 5 1 5 "s
high-lo-Iow-Ievel output
TEXAS . " 3-127

INSTRUMENTS
OP18013. OPI8015

OPI8013
OPI8015
MIN NOM MAX UNIT
Supply voltage, Vee 4.75 5 5.25 V
High-level output voltage, VOH 30 V
Low-level output current, IOL 12.8 mA
Operating free-air temperature, T A -40 70 °e
electrical characteristics, TA - 40 °C to 70°C (unless otherwise noted)

OPI8013 OPI8015
VF Input diode forward voltage IF - 10 mA, TA - 25°e 1.2 1.5 1.2 1.5 V
IR Input diode reverse current VR ~3 V, TA ~ 25°e 100 100 ~A
Input diode positive-going

IFT+ Vee ~ 5 V 1.5 10 1.5 10 mA
threshold current
•
1FT +/IFT- Hysteresis ratio Vee ~ 5 V 1.4 1.4
Vee - 4.75 V, IF - 0 0.02 100
IOH High-level output current ~A
VOH ~ 30 V IF - 10mA 2 100
Vee - 4.75 V, IF - 0 0.2 0.4
o IOl ~ 12.8 mA IF - 10 mA
IF - 0 8 15
0.2
4
0.4
15
"0 lee Supply current .vee ~ 5.25 V mA
r+ IF - 10 mA 10 15 9 15
o
g lTypical values are at T A ~ 25°e.
e::
"0 switching characteristics, T A
...
CD
(/) PARAMETER TEST CONDITIONS
OPI8013 OPI8015
UNIT
tr Rise time 30 70 30 70 ns
(ij'
o tf \ Fall time 9 70 9 70 ns
i»
r+ tplH
Propagation delay time, Vee ~ 5 V, IF ~ 10 mA,
1 5 3 5 ~s
low-to-high-Ievel output Rl ~ 360O, See Figure 1
...
o
-
Propagation delay time, 3 5 1 5 ~s
(/) tpHl
high-to-Iow-Ievel output
3-128
TEXAS " ,
INSTRUMENTS
OPIB012, OPIB013, OPIB014, OPIB015
VCC +5V
0.01 I'F T I l I'F

360 [) 310 [)
PULSE ":" ":" (6)
OUTPUT OPI8013
GENERATOR ~r----
(see Note A) OPI8015
(111 -+
IF MONITOR
_ ......--..,.,.,..,1--1 -+ .II. 1(4)
(2)~ _ _ _ _ _ J OPI8014
(see Note C)
100 [)
OUT (5) CL - 15 pF T
(see Note B)
":" =
TEST CIRCUIT
INPUT CURRENT
~- I
I.-tPLH....j
I I
).::.- - - -10mA
o • ...
CI)
...
o
C'CI
'0
OUTPUT VOLTAGE
OPI8012
OPI8013
I
I 10%
11'"::90;::0%:::-----:-"":9:"::0":::%""
-...
.!!J.
CI)
Q)
c..
:::s
o
(.)
OUTPUT VOLTAGE
OPI8014
OPI8015
...c.
o
o
WAVEFORMS
NOTES: A. The input pulse is supplied by a pulse generator with the following characteristics: PRF = 10kHz, duty cycle = 50%,
Ir < 20 ns, If < 20 ns, Zoul = 50 II.
B. CL includes probe and jig capacitance.
C. All diodes are lN3064 or lN916.
FIGURE 1. SWITCHING TIMES
TEXAS • 3-129
INSTRUMENTS
OPI8D12,OPI8D13, OP18D14, OPI8D15
POSITIVE-GOING THRESHOLD CURRENT HYSTERESIS RATIO

vs vs
<t 3.0 1.8
E Vee = 5 V Vee = 5 V
1. 1.7
!" 2.5
o
;;
u ~ 1.6
:2 2.0 ./ II)
o
.~ 1.5 ............
1
.c
to- 1.5
"'"
'0
CI
~ 1.0
'l'
- - --
- V
/""
./"
~
*
:t, 1.4
I
to-1.3
..........
r-...
-- ---r-- r-
'iii ~1.2
,
~ 0.5 .!!-
1.1
o 1.0
o -60 -40 -20 o 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100
....
'C
o
TA-Free-Air Temperature- De T A - Free-Air Temperature- De
n FIGURE 2 FIGURE 3
o
c OPIB012. OPIB014 OPIB013.0PIB015
'C LOW-LEVEL OUTPUT VOLTAGE
OUTPUT VOLTAGE
...
CD
en
vs vs
(jj 4 4
-- -
l
o Vee - 4.75 V Vee = 4.75 V
i»
....
...
o
-
en
>,
.,
.
3
- - I---
VOH (lOH = -800 "A)
I---
>, 3
!'l,
-a'" ~
o
>
~::l 2 ~ 2
g. Co
~
cS, o,
o o
> 1 > 1
VOL (lOL = 12.8 rnA) VOL (lOL - 12.8 rnA)
o o
-60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100
TA - Free-Air Temperature- De TA-Free-Air Temperature- DC
FIGURE 4 FIGURE 5
3-130 TEXAS .."

INSTRUMENTS
OP18012. OP18013. OP18014. OPI8015
OP18013,OP18015 OP18012,OP18014
HIGH-LEVEL OUTPUT CURRENT SHORT-CIRCUIT OUTPUT CURRENT
vs vs
4 -60
«
E
u
"-
I
!:!
:;
2
0.7
OPIS013
-- --
r--
«
u
E
I
~
!:!" -50
:;
/
l-- - -
~
:; 0.4 ::1
/'
Co
Q. t-Vee - 4.75 V :;
:; 0.2 t-VOH - 30 V 0-40
o
a;
~ 0.1
....J
.i:. 0.07
~'" 0.04
J: OPIS015 f- Vee - 5.25 V
..9 0.02 Vo - 0
0.01 -20 I I I ...en

-60 -40 -20 0 20 40 60 SO 100 -60 -40 -20 0 20 40 60 SO 100 o
+-'
T A -Free-Air Temperature- °e TA-Free-Air Temperature- °e
Ctl
FIGURE 6 FIGURE 7 (5
en
OP18012, OPI8013 OP18014,OP18015
-...
en
NORMALIZED SUPPLY CURRENT NORMALIZED SUPPLY CURRENT
~
vs vs C.
FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE :::l
1.6 1.6 o
()
1.4 1.4
o
+-'
u
u
IF - 10 mA
~
u
u ~-I o
C.
1 1 .2 1- ........ 1 1.2
.,
E IF = 0 ""'-.
""'-.
~
"" IIF - 1"---

~ 1.0 ...... IF - 0 - l: 1.0 - 10 mA-------- IF - 0 -
"""-i
~
:J
u
-a O.S ~
I 1-"""::
U
-a O.S I I ~
Q. Q.
::1 IF - 10 mA :J IF - 10 mA
~
CI)
0.6
.,
-c 0.6
.~ .~
~ 0.4 § 0.4
5 Vee = 5.25 V a Vee = 5.25 V
z 0.2 -10 = 0 Z 0.2 -10 = 0
Normalized to T A - 25°e No~maliz~d to ; A - 25°e
o I I I I I o
-60 -40 -20 0 20 40 60 SO 100 -60 -40 -20 0 20 40 60 SO 100
T A - Free-Air Temperature - °e T A - Free-Air Temperature - °e
FIGURE 8 FIGURE 9
TEXAS
INSTRUMENTS
"-!1 3-131
OP18012, OP18013, OP18014, OPI8015
OP18012,OP18014 OP18013, OPI8015

RISE TIME AND FALL TIME RISE TIME AND FALL TIME
vs vs
60 60
Ve~ = 5 V Vee = 5 V
IF = 10 rnA
IF = 10 rnA
., 50
RL = 360 n
., 50 Output Load:
.,"I
"E 40
See Figure 1
/ .,"I
"E 40
8 TTL equivalent circuit
See Figure 1
j::
V j::
iii
LL
"0 30 / iii
LL
"0 30
tr I----
"co
.," tr V "co
tt: 20 ./ tt:"'" 20
• -
b /"
V tf
b tf
~
10 ">-= ~
10
0 o o
"0 -60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100
.-+
0 TA-Free-Air Ternperature- °e TA - Free-Air Ternperature- °e
(")
0 FIGURE 10 FIGURE 11
r:
"0 OP18012, OPI8013 OP18014,OP18015
...
CD
VI
PROPAGATION DELAY TIME PROPAGATION DELAY TIME
vs
vs
VI 6 6
0
Q) '"-"I Ve~ =5 V .,
"-
Vee = 5 V
.-+ IF = 10 rnA I IF = 10 rnA
...
0 "E 5 See Figure 1 "E 5 See Figure 1
-
VI
j::
>-
co
-;; 4
0
/"
/'
j::
>-
co
-;; 4
0
/"
........
/"
";"
"
.S!
tpHL 0 tPLH .....-- /"
-----
/'
.---
1ij 3 3
'"
co .............. '"co ..............
Co
0
.--j Co
0
Ii: 2 Ii: 2
--- - --
I I
..... .....
J: J:
e- tP~H e- tpHL
:i:
.....
e- - :i:
.....
e-
o o
-60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100
T A - Free-Air T ernperature - °e TA - Free-Air Ternperature- °e
FIGURE 12 FIGURE 13
3-132 TEXAS •
INSTRUMENTS
TIL1 02. TIL1 03
OPTOCOUPLERS
0910, SEPTEMBER 1970-REVISED NOVEMBER 1974


• High Overall Current Gain ... 1.5 Typ (TIL 103)
• High-Voltage Transistor ... V (BR )CEO = 35 V Min
• High·Voltage Electrical Isolation ... l·kV Rating
mechanical data
470(0.185)..
3.94iG.155i r--
__'~i" r-'
102(00401
.M
r 6lEAOS
0433 (0019) DIA
0406(00161
II
-.
CI)
~ 7\ ...
o
t- \~~f/
!:51103351 :::::::::94010370!OIA - . - - - '3 """
1,74 lQ 305)
'------ ~
85110335)'
1 \ ~~! .....;
!...'4(0045)
I~073(00291
~O.B64j9.034)
CO
"0
-.
_ _ _ _ _ _ ----' 508(0200) - --
1.12.7~~N500I.l I~D~~tfla) t- 45 fI''' 0,711(0.028)
CI)
CI)
Q)
NOTE a: Leads having maximum diameter shall be with 0,18 mm (0.007 inches) of true
position relative to a maximum-width tab when measured in the gaging plane Q.
between 1,371 mm (0.054 inches) and 1,397 mm (0.055 inches) below the seating ::::I
plane. o
CJ
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES. ...
o
C-
O
Input-to-Output Voltage _ ±lkV

Collector-Emitter Voltage 35V
Collector-Base Voltage 35V
Emitter-Base Voltage 4V
Input Diode Reverse Voltage 2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (See Note 1) 40mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) 300mW
Storage Temperature Range ............ _ . -55°C to 125°C
Lead Temperature 1,6 mm (1/16 Inch) from Case for 10 Seconds 240°C
2. Derate linearly to 12SoC tree-air temperature at the rate of 3 mW/oC.
current IS of publication date. Products conform to
specifications par the terms of Taxas Instruments
~~~=~~i~'r::I~~~ ~:~:~ti:r :I~O::~:::':~~S not
TEXAS . " 3-133
INSTRUMENTS
TIL 102. TIL 103
OPTOCOUPLERS

TlLl02 TIL103
V(aR)CaO Collector-Base Breakdown Voltage IC - 100 ~A, IE - 0, IF - 0 35 35 V
V(aR)CEO Collector-Emitter Breakdown Voltage IC-l mA, la =0, IF = a 35 35 V
V(aR)EaO Emitter-Base Breakdown Voltage IE - 100 ~A, IC= 0, IF - a 4 4 V
IR Input Diode Static Reverse Current VR - 2V 100 100 ~A
Phototransistor
VCE=5V, la = 0, 'IF=10mA 2.5 6 10 15 mA
On-State Operation
IC(on)
Collector Current Photodiode
Vca=5V, IE = 0, IF=10mA 40 40 ~A
Operation
VCE=20V, la = 0, IF = 0 6 100 6 100 nA
Phototransistor
VCE=20V, la -0, IF - 0,
Off-State Operation 4 4 ~A
IC(off) TA=100"C
Collector Current
Photodiode
Vca=20V, IE = 0, IF = a 0.1 0.1 nA
Operation
Transistor Static Forward
hFE VCE =,5V, IC= 10mA,IF =0 300 500
•
Current Transfer Ratio
VF Input Diode Static Forward Voltage IF = 10mA 1.3 1.3 V
IC - 2.5 mA, la = 0, IF - 20 mA 0.3
VCE(satl Collector-Emitter Saturation Voltage V
Ic-l0mA, la = 0, IF - 20 mA 0.3
'10 Input-ta-Output Internal Resistance Vin-out"" ±1 kV. See Note 3 10" 10 12 1011 10 12 !l
o
'0
Cio Input-to-Output Capacitance Vin-out = 0, f -1 MHz, See Note 3 2.5 2.5 pF
S NOTE 3: These parameters are measured between both input diode leads shorted together and all the phototransistor leads shorted together.
(')
o switching characteristics at 25°C free-air temperature
C
.
'0
(;)
fI) Ir
If
PARAMETER
Rise Time
Fall Time
Phototransistor
Operation
TEST CONDITIONS
VCC=20V,IB=0, IC(on) = 5 mA,

RL = 100 n, See Test Circuit A of Figure 1
TIL102
TYP
3
3
TlLl03
TYP
6
6
UNIT
~s
Cii Ir Rise Time Photodiode VCC-20V,IE-0, I Cion) = 50 ~A, 150 150

o RL = 100 n, See Test Circuit B of Figure 1
ns
....
Dr
o
If Fall Time Operation 150 150
-
fI)
3-134 TEXAS . "

INSTRUMENTS
POST OFFJCE BOX 865303 • DALlAS, TeXAS 75285
TIL1 02. TIL 103
OPTOCOUPLERS
PARAMETER MEASUREMENt INFORMATION

IC(on) = 5 rnA (Test Circuit A) or
IC(on) = 50 "A (Test Circuit B)
INPUT
..---t<--MJ-.....-'lNv-o
200 n
INPUT
0--1
I
.... ton --t
l- I
",l oft..,.
..---r--MJ-"<--'lNv-o INPUT
~1- .....-oOUTPUT I
(See Note BI
OUTPUT
If+--!I I ' - - -.....-0 OUTPUT
RL - 10011
~90-%--~~~---90-%~ : (See NOle 81
I
I
I

PHOTOTRANSISTOR OPERATION VOLTAGE WAVEFORMS PHOTODIOOE OPERATION
NOTES: The input waveform is supplied by a generator with the following characteristics: Zout = 50 n, tr";;;; 15 ns, duty cycle:;:: 1%. For
Test Circuit A, tw = 100 J.ls. For Test Circuit B, tw = 1 j.lS.
b. Waveforms are monitored on an oscilioscope with the following characteristics: tr ~ 12 ns, Rin ~ 1 Mn. Gin S;;;; 20 pF.
TYPICAL CHARACTERISTICS II
-...
f /)
...
o
CO
TIL102 TIL103
"'0
50
COLLECTOR CURRENT
vs
COLLECTOR CURRENT
vs
COLLECTOR-EMITTER VOLTAGE -...
f/)
f /)
100 Q)
IB = 0 IB - 0
C.
--
TA = 25°C 1 TA = 25°C 1
IF=40m~ :::l
40
See Note 4
80
See Note 4 1 o
--I I~ CJ
...
------
..:
E
..:
E
o
.!.c ,. V- IF=30mA_ .!.c r-- IF =36mA Q.
~
30 ~--
-I ~
60
o
7
-----
u
~
~ u
~
(
~ ;-[
r-- 5
B
M I~ IF=20m~
M I~ IF=20m~
-
20 40
r-
f----- ~
0 0
u u
I 1 I 1
!::!
!::!
10
V- IF=10lA.= 20
IF = 16mA
I 1
o 1 0 1
o 10 15 20 25
0 5 10 15 20 25
VeE-Collector-Emitter Voltage-V VCE-Collector~Emitter Voltage-V
FIGURE 2 FIGURE 3
NOTE 4: 'This parameter was measured using pulse techniques, tw = 100 J,ls, duty cycle = 1%.
TEXAS • 3-135
INSTRUMENTS
TIL 102, TIL 103
OPTOCOUPLERS
NORMALIZED ON-STATE COLLECTOR CURRENT'
40
TA = 25°C ·c
1.6
VeE = 5 V
• .!1.4f-- 1e=O
U
-
IF = 10mA
30 ~ 1. 2
~ 3• V r--....
~
•
8
26
20
rso. 0
8
..........
"
]
~
1
•
10
~
o
§
~
o.6
o.4
" "'
• J o. 2
0
I) 0
o 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -75 -50 -25 0 25 50 75 100 125
VF-Forward Voltage-V. T A-·Free-Air Temperature-°c
tNormellzl!d to value d T A'" 215°C
FIGURE4 PHOTOTRANSISTOR COLLECTOR CURRENT FIGURE 5
E
o ~
~
l0040~EE.
'a-
'INPUT-DIQDE FORWARD CURRENT
VeE = 5 V
O ~-
...o 10 TA-2SoC TIL103
~~!!~~~~!I~~~~~!!!
'0
n
o J3 TlLl02
c
'0 .1 0
. • • • •
CD
...
tn
O'I~I~.{IIJI*~rnl~ttl
1J0.04~
0'
o
...o
ii'
0.01
0.1
'--ll..LI--'-1.ulllliL
0.4
111--'---'...L.lllill-...LLLJ..wJ.
10
IF-Input-Diode Fol'WtIrd Current-rnA
40 10 TlLl02
... OFF-STATE COLLECTOR CURRENT FIGURE 6

LOAD RESISTANCE
~ FREE·AIR TEMPERATURE
10000
V~E' 20lv /V
f--,S" 0
IF = 0
/
/
1
/
,/
'V
1
0.00 1
-50 -26 25 50 15 100 12.
AL-Load Resistance-n
T A-Free-Air T8mper81ure-°C
FIGURE '7 FIGURE 8
NOTE 5: These parameters ware measured In Test Circuits A and B of Figure 1 with RL varied between 40 nand 10 kn.
3·136 . TEXAS'"
INSTRUMENTS
TIL 111. TlL114. TIL116. TIL 117
OPTOCOUPLERS
01607, NOVEMBER 1973-REVISEO FEBRUARY 1983
• Gallium Arsenide Diode Infrared Source Optically Coupled

to a Silicon N·P·N Phototransistor
• High Direct·Current Transfer Ratio
• High·Voltage Electrical Isolation, .. 1.5·kV or 2.5·kV Rating
• Plastic Dual·ln·Line Package
• High·Speed Switching: tr = 5 j.Ls, tf = 5 j.LS Typical
mechanical data
The package consists of a gallivm arsenide infrared'emitting diode and an n·p·n silicon phototransistor mounted on a
6·lead frame encapsulated within an electrically nonconductive plastic compound. The case will withstand soldering
temperature with no deformation and device performance characteristics remain stable when operated in high·humidity
conditions. Unit weight is approximately 0.52 grams.
NOTES:
t~ . """"
a. Leads are within 0,13 mm (0.005 inch) radius of
'i.
-
'",.'""'00'''
(5 ... Note Al
6.0910.2401
b. Pin 1 identified by index dot. -...
IJl
!i.46102Hij
2'92(01151~
T
1.78 100701 MAX
...12o
. /"~"",I ~
__ 6 PLACES
1. Anode t nfrared-emitting
}
2. Cathode diode
--.L
o
""""""'" ~, 0 mAF"
tJ JL ."
- SEATING PLANE 3. No internal connection
'" ,---,
-...
... - 4. Emitter } IJl
1~
5. Collector Phototransistor
,.""'''' ::l;m:g:gt.J
317 (0 12&) 4 PLACES " I 0,534100211 6. Base IJl
0.l81 iO.OH;)
25410 100)T p_ 6PLAC£S
ISuNOleA)
.E:!
c.
FALLS WITHIN JEDEC MO-OOIAM DIMENSIONS ::::l
t,)
absolute maximum ratings at 25°C free·air temperature (unless otherwise noted)
Input-to·Output Voltage: TIL 111 ±1.5 kV
...
o
Q.
TIL114, TIL116, TILl17 ±2.5 kV o

Collector· Base Voltage 70V
Collector·Emitter Voltage (See Note 1) 30V
Emitter-Base Voltage 7V
Input-Diode Reverse Voltage 3V
Input·Diode Continuous Forward Current at (or below) 25°C Free-Air Temperature (See Note 2) 100mA
Continuous Power Dissipation at (or below) 25°C Free·Air Temperature:
Infrared·Emitting Diode (See Note 3) . . . . . . . . . . . 150mW
Phototransistor (See Note 4) ............ . 150mW
Total, Infrared·Emitting Diode plus Phototransistor (See Note 5) 250mW
Storage Temperature Range ............. . -55°C to 150°C
NOTES; 1. This value applies when the base-emitter diode is open-circuited.
2. Derate linearly to lOOoe free-air temperature at the rate of 1.33 mAlC.
3. Derate linearly to 100"C free-air temperature at the rate of 2 mW/oC.
4. Derate linearly to lOOoe free-air temperature at the rate of 2 mW/oC.
5. Derate linearly to 1000 e free-air temperature at the rate of 3.33 mW/oC.
PRODUCTION DATA documonts contain information Copynght © , 983, Texas Instruments Incorporated
currant IS of publication date. Products conform to
standard warranty. Production processing does not
TEXAS •
necessarily include testing of all parameters. INSTRUMENTS 3·137
TIL 111. TIL114. TIL 116. TIL 117
OPTOCOUPLERS
electrical characteristics at 25° C free-air temperature

TIL111
TILl16 TlLI17
PARAMETER TEST CONOITIONS TlL114 UNIT
Collector-Base IC" 10~A, IE" 0,
V18R)C80 70 70 70 V
Collector-Emitter IC" 1 mA, 18 - 0,
VI8R)CEO 30 30 30 V
Emitter-Base IE" 10 ~A, IC - 0,
V18R)E80 7 7 7 V
Input Diode Static
IR VR = 3 V 10 10 10 ~A
Reverse Current
VCE = 0.4 V, IF = 16mA,
2 7
Phototransistor 18 = 0
On-State mA
Operation VCE=10V, IF = 10mA,
Collector 2 5 5 9
IClon) 18 = 0
Current
Photodiode VC8 - 0.4 V, IF - 16mA,
7 20 7 20 7 20 'fA
Operation IE = 0
Photo transistor VCE-l0V, IF - 0,
E
Off·State 1 50 1 50 1 50
Operation 18 = 0
ICloff) Collector nA
Photodiode VC8- 1OV, IF - 0,
Current 0.1 20 0.1 20 0.1 20
Operation IE = 0
o Transistor Static
VCE - 5 V, IC-l0mA,
100 300 200 550
...o
'0 hFE Forward Current
Transfer Ratio
IF =0
VCE - 5 V,
IF = 0
IC - 100 "A,
100 300
(")
o VF
Input Diode Static IF = 16 mA 1.2 1.4 1.2 1.4
V
t: Forward Voltage IF-60mA 1.25 1.5
'0 Ic=2mA, IF-16mA,
...
CD 18" 0
0.25 0.4
en Collector-Emitter IC" 2.2 mA, IF-15mA,

VCEl,atl 0.25 0.4 V
Saturation Voltage
en
o
18" 0
IC - 0.5mA, IF - 10 mA,
0.25 0.4
...
iii" 18" 0
Vin-out" ±1.5 kV forTIL111,
...
o '10
Input-ta-Output
±2.5 kV for all others, lOll lOll lOll n
-
en
Cio
Internal Resistance
Input-.te-Output
Capacitance
See Note 6
Vin-out "" 0,
See Note 6
f -1 MHz,
1 1.3 1 1.3 1 1.3 pF
switching characteristics at 25° C free-air temperature

TIL111
TIL116 TlLI17
PARAMETER TEST CONDITIONS TILl14 UNIT
Rise Time Photo transistor VCC" 10V, IClon) " 2 mA, 10

'r 5 5 10 5 10
RL"100n,
tf Fall Time Operation
See Test Circuit A of Figure 1 5 10 5 10 5 10 '"
Rise Time Photodiode VCC= 10V, IClon) " 20 ~A, 1 1 1
'r
RL" 1 kn,
If Fall Time Operation
See Test Circuit B of Figure 1 1 1 1 '"
3-138
TEXAS . "
INSTRUMENTS
TIL 111. TIL 114. TIL116. TIL 117
OPTOCOUPLERS

le(an) = 2 mA (Test Circuit AI or
IC(on) '" 20 J-LA (Test Circuit BI
INPUT
4711 o-.J L
.rJ1-....-o OUTPUT
(See Note b) ' - -_ _ _.., OUTPUT
OUTPUT
RL=100n
(See Note bl

NOTES: a. The mput waveform is supplied by a generator with the following characteristics: Zout = 50 E, tr ~:. 15 ns, duty cycle::::: 1%,
tw 100 }.J.S.
b. The output waveform IS monitored on an oscilloscope with the following characteristics: tr'~ 12 ns, Rin ."> 1 MH. Cin';' 2Q pF
FIGURE I-SWITCHING TIMES

-...
Ifj
...oca
TYPICAL CHARACTERISTICS "0
.!E.
TIL 111, TIL 114 TIL116, TIL117
COLLECTOR CURRENT
vs
COLLECTOR CURRENT ...
Ifj
Q)
vs
INPUT·DIODE FORWARD CURRENT INPUT·DIODE FORWARD CURRENT 0.
:::s
100
VCE 0.4 V
100
10V
o(,)
VCE
40 18 - 0
TA=25°C
40 18 0
TA = 25°C
...
o
C-
<{ 10 <{ 10 // O
E E
.!.c: 4 .!.c: 4
TIL117
::'" ~
"
u U" V TIL116
0
ti
S 0.4 r--
~
0.4 ~" ..
-0 / -0 /
u u
I I
!:? 0.1
!:? 0.1
0.04 0.04
0.01 V 0,01 VI
0.1 0.4 4 10 40 100 0.1 0.4 4 10 40 100
IF-Forward Current-rnA IF-Forward Current-rnA
FIGURE 2 FIGURE 3
TEXAS .." 3-139

INSTRUMENTS
POST OFFICE BOX 655303 • OALLAS, TEXAS 15265
TlLllL TIll 14. Till 16. TILl17
OPTOCOUPLERS
TIL111, TIL114 TIL 116

vs vs
60 60
18 = a 18 = a
50 -
\~I
'»
TA = 25°C
See Note 7 50
I~
,»
1)(
.. -
TA = 25°C
See Note 7
'.)( « Ie>
-~
« I I
E
10
E Ie> \~
.I.c 40 - ~~ .I.c 40 r - ~'-Z.
...\
t C-
~
U
::>
30
't0 I U
::>
30
10
IC-
U>
0 ,s, - 0 , 1.<> -
tl
~ IF=40 rn l'-, "'0-
~'tz.-f:
- - f-- f--c-
- - 0
~ IF=4
o rnl'- ,O~
,,-~-- ---- - --
0
U
20
~~~:9 U
I
20
f"'IF = 30 11'1'-
---..1>
p ...DISS --
--
-
I
IF =2411'1'- DISSIP - - f--c- - .Y - IPA,
E
.Y
- A"orv':- V-- IF = 20 mA - - '?rv -- --
10 I--IF -16 mA
IF = 8 mA
-::-: 10
IF = 10 mA
-- --
o 1
o
0 o 2 4 6 8 10 12 14 16 18 20 o 2 4 6 8 10 12 14 16 18 20
"0
r+
0 VCE-Collector-Emitter Voltage-V VCE-Collector-Emitter Voltage-V
(') FIGURE 4 FIGURE 5
0
c: TIL,,7
"0
RELATIVE ON-STATE COLLECTOR CURRENT
...
CD
VI
COLLECTOR CURRENT
vs vs
COLLECTOR-EMITTER VOLTAGE FREE-AIR TEMPERATURE
VI oU 1.6 ~
2- l!")
N
VCE
18 = 0
= 0.4 V to 10 V
III
r+ "
« 1.4
IF = 10 mA
...
0
VI
«
E
I-
~ 1.2 I---See Note 8
'"::>
.I.c
~
U
e
:; .9
~
1.0
0.8
V- r---- --........
~
0
t)
.~
OJ
0: 0.6
/
0 ~
c
U
I ~ 0.4
.Y ::>
U
a 0.2
]
o
U 0
o 2 4 6 8 10 12 14 16 17 20 -75 -50 -25 0 25 50 75 100 125
VCE-Collector-Emitter Voltage-V T A-Free-Air Temperature- °c
FIGURE 6 FIGURE 7
8. These parameters were measured using pulse techniques. tw = 1 ms, duty cycle"';;; 2%.
TEXAS . "
3-140
INSTRUMENTS
TIL 111. TIL 114. TlL116. TlL117
OPTOCOUPLERS
OFF·STATE COLLECTOR CURRENT NORMALIZED TRANSISTOR STATIC FORWARO

vs CURRENT TRANSFER RATIO
FREE-AIR TEMPERATURE vs
w
u- ON·STATE COLLECTOR CURRENT
.I:
10 000 I 1.6
VCE 10V o VCE ~ 5 V
4000 .~
«c IS 0 a:: 1.4
IF ~ 0
TA~2SDC
.!.c 1000 IF - 0
~ 400 1.2
::J
U /v
100 / 1.0
B
i! 40 /'
0 0.8
u
/ "E /"
e 10
~ 0.6
'"
~ 4 o
u.
u
0 / .~ 0.4
.L Vl
:y
~ 0.4 ] 0.2 Normalized to i ~6
at IC ~ 1 rnA
0.1 / ~ o
o 10 20 30 40 SO 60 70 80 90 100 (; 0.1 0.2 0.4 2 4 10 20 40 100 II)
~
...
T A-Free·Air Ternperature-DC Z
IC(on)-o"n.State Collector Current-rnA o
FIGURE 8 FIGURE 9 ctI
'0II)
INPUT DIODE FORWARD
COLLECTOR CURRENT
vs
-I I)
~
CONDUCTION CHARACTERISTICS
MODULATION FREQUENCY ~
160 10 Q.
Se~ Not~ 7 II I VCC 10 V ::l
140 IS 0 o
4 o
« 120
TA ~ 25 DC
HI «
E 2
TA ~ 2SOC
RL ~ 10on ...
o
~"
.!.c Q.
E
I
'C 100
III ~::J
o
~
::J
u 80
'/ u
(;
t>
0.4 RL 1 kn
11111 '\
"E /11 I ~ 0.2
~ 60 0 IIII "\
~ 70 DC I
u
0
U-
I 40
TA / I
!:?
0.1
RL -475H
// I
U-
0.04
20 0.02
TA ~ _55 DC
0
-? / 'I 1 0.01
o 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 4 10 40 100 400 1000
VF-Forward Voltage-V fmod-Modulation Frequency-kHz
FIGURE 10 FIGURE 11
NOTE 7: These parameters were measured UStng pulse techniques. tw -; 1 ms, duty cvcle "'" 2%
TEXAS •
. INSTRUMENTS 3-141
E
o
'0
r+
o
(")
o
c:
'0
...
CD
C/l
C/l
o
iii"
r+
o...
-
C/l
3-142
TIL113, TlL119A
OPTOCOUPLERS
D1499. AUGUST 1981-REVISED JUNE 1989

to a Silicon N-P-N Darlington-Connected Phototransistor
• High Direct-Current Transfer Ratio ... 300% Minimum at 10 mA
• High-Voltage Electrical Isolation ... 1500-Volt Rating
• Base Lead Provided on TI L113 for Conventional Transistor Biasing
• No Base Lead Connection on TIL 119A for High-EMI Environments
• Typical Applications Include Remote Terminal Isolation, SCR and
Triac Triggers, Mechanical Relays, and Pulse Transformers
mechanical data
The package consists of a gallium arsenide infrared-emitting diode and an n-p-n silicon darlington-connected photo-
transistor mounted on a 6-lead frame encapsulated within an electrically nonconductive plastic compound. The case.
will withstand soldering temperature with no deformation and device performance characteristics remain stable when
operated in high-humidity conditions. Unit weight is approximately 0.52 grams.
NOTES:
a. Leads are within 0,13 rnm (0.005 inch) radius of
II
...
In
1. Anode
2. Cathode
} Infrared-emitting
diode ...o
li~:~::~::"~.~~~.}~~~~,
CO
'0
-...
In
In
(1)
Q.
FALLS WITHIN JEDEC MO-001AM DIMENSIONS ::::I
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES o(J
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) ...c.o
Input-to-Output Voltage . . . . . .
Collector· Base Voltage (TI L113) . . .
±1.5 kV
30V
o
Collector· Emitter Voltage (See Note 1) 30V
Emitter-Base Voltage (TI L113). . . . 7V
Input·Diode Continuous Forward Current at (or below) 25°C Free-Air Temperature (See Note 2) 100mA
Infrared-Emitting Diode (See Note 3) . . . . . . 150mW
Phototransistor (See Note 4) ........ . 150mW
Total (Infrared-Emitting Diode plus Phototransistor. See Note 5) 250mW
Storage Temperature Range ........... . _55°C to 150°C
Lead Temperature 1,6 mm (1 /16 Inch) from Case for 10 Seconds 260°C
2. Derate linearly to 100°C free-air temperature at the rate of 1.33'mA/C.
3. Derate linearly to 100°C free-air temperature at the rate of 2 mW/"C.
4. Derate linearly to 100°C free-air temperature at the rate of 2 mWt'C.
5. Derate linearly to 100°C free-air temperature at the rate of 3.33 mW/'C.
specifications par the tarms of Taxas Instruments TEXAS •
:~~::~~i~a{::1~1i ~!::i~~ti:r :IID::;:::::t~:S~S not INSTRUMENTS 3-143
TlL113. TIL 119A
OPTOCOUPLERS

TILl13 TIL 119A
PARAMETER TEST CONDITIONst UNIT
Collector~Base
VIBR)CBO IC" 10~A, IE" 0, IF" 0 30 V
Breakdown Voltage
Collector-Emitter
VIBR)CEO IC" ,. mA, IB" 0, IF" 0 30 30 V
Breakdown Voltage
Emitter-Base
VISR)ESO IE ·lO~A, IC" 0, IF" 0 7 V
Breakdown Voltage
Emitter-Collector
V(BR)ECO IE" 10"A, IF" 0 7 V
Breakdown Voltage
On-State VCE ~ 1 V, IS - 0, IF - 10 mA 30 100
IClon) mA
Collector Current VCE - 1 V, IF"lOmA 30 160
Off-State
ICloffi VCE" 10V, IS" 0, IF" 0 100 100 nA
Collector Current
Transistor Static
hFE Forward Current VCE"lV, Ic"10mA, IF" 0 15,000
Transfer Ratio
Input Diode Static
VF IF" 10 mA 1.5 1.5 V
Forward Voltage
Collector-Emitter IC - 125mA, IS - 0, IF - 50mA 1.2
VCE(,al) V
Saturation Voltage Ie ~ 30 mA, IF"10mA 1
o '10
I nput-to-DutRut
Internal Resistance
Vin.-out =i 1.5 kV. See Note 6 lO" lOll n
....
"0
o Cia
I nput-to-Output
Vin-Qut = 0, f" 1 MHz, See Note 6 1 1.3 1 1.3 pF
C') Capacitance
g
"0
t Reference to the base are not applicab!e to TIL 119A.
CD
... switching characteristics at 25° C free-air temperature
CII -- ..--
TLl13 TIL 119A
en Rise Time VCC·15V,
o I,
Fall Time
IClon) " 125 mA,
See Figure 1
300
~,
Dr If RL" lOOn, 300
..
r+
o
I,
If
Rise Time
Fall Time
VCC-l0V,
RL" 100 n,
IClon) " 2.5 mA,
See Figure 1
300
300
~,
-
CII
1- - -l47n
1: I ~ VV'v-<) INPUT IClon) = 125 mA ITIL113)
IC(on) = 2.5 rnA (TIL 119A)
-= I // I
o-.J
I I INPUT L
1
I ,--I--<'-OOUTPUT 90%
-L ___ --1 RL"10011 OUTPUT
TEST CIRCUIT -= VOLTAGE WAVEFORMS
NOTES: The input waveform is supplied by a generator with the following characteristics: Zout '" 50 n, tr ~ 15 ns, duty cycle:=::: 1 %,
tw = 500,",5.
b. The output waveform is monitored on an oscilloscope with the following characteristics: tr .:; ;:; 12 ns, Rin ~ 1 Mn. Cin ~ 20 pF.
TEXAS •
3-144 INSTRUMENTS
TlL113. TIL119A
OPTOCOUPLERS

vs vs
120 200
~-bk/~~X
18 ~ 0
"J~~<C1 ~ {\'P-
180
100
TA=25"C
See Note 7
160
II 1/ \/?th
I
-<7+/\,<'
« «
E
j IF = 30 mAl' 1'<,> 01-)-. " \~,-"
fj" ~U'-~(/O
~-;rr--
E 140 i
1-c 80 1-c IF = 40 mA
l
t t:> 120
IF = 50 mA
I ~. ~-~-f-
:>
U
/ ,01-
U 60 100
0 0
t) t)
~ 80 / "-
"-
~
"0
u
40 "0
u 60
1/
I I
5:? 5:?
40 18 = 0
20
/J
0
0 0.4 0.8 1.2 1.6 2.0 2.4
20
0
o
If
0.2 0.4 0.6 0.8 1
TA = 25°C
Sej Notil
1.2 1.4 1.6 1.8 2

II
-..
Ul
FIGURE 2
....o
CO
FIGURE 3
"0
COLLECTOR CURRENT
vs
INPUT-DIODE FORWARD CURRENT
OFF-STATE COLLECTOR CURRENT
vs
-..
Ul
Ul
Q)
400 1000 C.
VCE = 1 V VCE=1 10V :::I
«::l o
IS = 0
T A = 25°C 1- 100 r-
18 = 0 / t,)
o
« 200 IF = 0
....
E
1-c
/'
V f.-
~
u
:>
10 V o
c.
~
~ 100
:; 0
t)
u ~
70
0 "0 I----
t)
~ - I
u /
"0
u
40
/
E /
I ~ 0.1
5:?
20
II
/
(5
.L.
::: 0.01 V
V
.9-
u
10 / 0.001
2 4 7 10 20 40 70 100 o 25 50 75 100 125
IF-Forward Current-mA TA-Free-Air Temperature-OC
FIGURE 4 FIGURE 5
NOTE 7: Pulse operation of input diode is required for operation beyond limits shown by dotted line.
TEXAS ~ 3-145
INSTRUMENTS
TIL 113, TIL 119A
OPTOCOUPLERS
TIL113
RELATIVE COLLECTOR-EMITTER TRANSISTOR STATIC FORWARD
SATURATION VQL TAGE CURRENT TRANSFER RATIO
vs vs
FREE·AIR TEMPERATURE COLLECTOR CURRENT
1.6 25,000
IC = 125 rnA o VCE = i"v I
.~
1.4 - IS=O IF = 0
IF =50 rnA 0::
20,000 TA = 25°C 1\
\
-
1.2 ~c: I
1.0
r--- E
l-
/
t: 15,000
~
0.8 :;
U
0.6
"E 10,000
o
~ V
u.
0.4
"
~
5,000
0.2
w
u.
o
"C
o
-75 -50 -25 0 25 50 75 100 125
.r::: o
0.1 0.4 4
r
10 40 100 400 1000
r+
o T A-free-Air Ternperature-°c Ic-Collector Current-rnA
n
o
r::: FIGURE 6 FIGURE 7
"C
...Ci"
fI)
INPUT DIODE FORWARD
160
Cii Se~ No~e 8
o 140 I 1
ii"
r+
o... « 120
TA = 25°C
HI
!!!.. E
1-c: 100 II
~
u" SO
I
..
"E
~ 60 IIII
0
u.
I
u. 40
TA = 70°C /, /
20
1/ II
0 !. ~ TA = _55°C
'I 1
o 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FIGURE B
NOTE 8: This parameter was measured using pulse techniques. tw"" 1 ms, duty cycle" 2%.
3-146 TEXAS
INSTRUMENTS
..If
TIL 118·1, TIL 118·2, TIL 118·3
OPTOCOUPLERS
01607, NOVEMBER 1973-REVISED JULY 1989
• Gallium Arsenide Diode Infrared Source Optically Coupled to a

Silicon N·P-N Phototransistor
• High-Voltage Electrical Isolation, ,3,53 kV
• Plastic' Dual-In-Line Package
• High-Speed Switching: tr - 2 pS, tf - 2 pS Typical
• Choice of Three Current Transfer Ratios
• No Base Lead Connection for High EMI Environment
mechanical data
The package consists of a gallium arsenide infrared-emitting diode and an n-p-n silicon phototransistor
mounted on a 6-lead frame encapsulated within an electrically non conductive plastic compound, The case
will withstand soldering temperature with no deformation and device performance characteristics remain
stable when operated in high-humidity conditions, Unit weight is approximately 0,52 grams,
-...
( /)
....o
m
(5
-...
(/)
( /)
Q)
C.
::::J
o
(,)
NOTES: A. Leads are within 0,13 mm (0.005 inch) radius ....oc.

of true position (T.P.) with maximum material
6
condition and unit installed. o
2 5
,. Anode Infrared· emitting
}
2. Cathode diode
3 4
4. Emitter
5. Coliector } Phototransistor
6. Base

currant IS of publicatioR date. Products conform to
specifications per the terms of raxas Instruments TEXAS " , 3-147
:~~:::~~i~·r::,~'~ ~:~:~ti:r lIl"::~:::::,:i.': not INSTRUMENTS
POST OFFICE BOX 655303 • DALLA!!>. TEXAS 75265
TIL 118-1, TlL118-2, TIL118-3
OPTOCOUPLERS

Input-to-output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 3.535 kV peak or dc (± 2.5 kV rms)
Collector-emitter voltage (see Note 1) ..... 30 V
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . 7V
Input diode reverse voltage ................... . . ..... 3 V
Input diode continuous forward current at (or below)
25°C free-air temperature (see Note 2) ..................... . 100 mA
Continuous power dissipation at (or below) 25 °C free-air temperature:
Infrared-emitting diode (see Note 3) .................... . 150 mW
Phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
Total, infrared-emitting diode plus phototransistor, (see Note 4) 250 mW
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds. . . . . . . . . . . . . . . . . . . . .. 260°C
NOTES: 1. This value applies when the base-emitter diode is open circuited.
3. Derate linearly to 10QoC free-air temperature at the rate of 2 mW/oC.

Collector-emitter
o
'0
V(8R)CEO
breakdown voltage
IC ~ 1 mA, 18 ~ 0, IF ~ 0 30 V
r+ Emitter-collector
V(8R)ECO IE ~ 10 ~A, IF ~ 0 7 V
o breakdown voltage
(")
o On-state Photo- I TILl18-1 2
!: IC(on) collector transistor I TIL 118-2 vCE ~
5 V, IF ~ 10 mA, 18 ~ 0 5 mA
'0 current operation I TIL 118-3 10
CD
... Off-state
Phototransistor
(/l IC(off) collector VCE ~ 5 V, IF ~ 0, 18 ~ 0 1 100 nA
operation
current
(/l Input diode static
10 mAo
o VF
forward voltage
IF ~ 1.2 1.5 V
Ql Collector-emitter
r+ VCE(sat) IC ~ 2 mA, IF ~ 10 mA, 18 ~ 0 0.4 V
o
... saturation voltage
lnput~to-output
(/l
'10 Vin-out = ± 500 V, See Note 5 1011 n
internal resistance
Input-to-output
Cio
capacitance
Vin-out = 0, f ~ 1 MHz, See Note 5 1 2 pF
NOTE 5: These parameters are measured between both input-diode leads shorted together and aU the phototransistor leads shorted together.
switching characteristics at 25°C free-air temperature

tr Rise time Phototransistor VCC ~ 10 V, IC(on) ~ 2 mA, 2 15
Fall time operation RL ~ 100 n, See Figure 1 15
3-148 TEXAS -I!}

INSTRUMENTS
TIL 118·1, TIL 118·2, TIL 118·3
OPTOCOUPLERS
Adjust amplitude of Input pulse for: INPUT

IC(on) - 2 mA
0--1 L
INPUT
OUTPUT OUTPUT
(See Note B)
RL - 10011
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Zout = 50 n, tr S '5 ns,
duty cycle ~ 1 %, tw ~ 100 ~s.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr :!5 12 ns, Rin ~ 1 MO, Cin :!5 20 pF.
FIGURE 1, SWITCHING TIMES
COLLECTOR CURRENT
&I
-
vs
COLLECTOR CURRENT
vs ...
CIl
COLLECTOR-EMITTER VOLTAGE INPUT-DIODE FORWARD CURRENT ....o

CI:I
15 100
-- --- ---
VCE 5V "0
12.5
«
40 18 -0
TA = 25°C -...
CIl
CIl
«
E
1:
I 10
--- E
.!.
10
4
Q)
c..
~::J ~ L/ :::l
u U
::J
o
7.5 CJ
j
~
~
.!! 0.4
o
....c.
15 5 ;3 o
'?S; I
S; 0.1
2.5 0.04
/
0.01 /
5 10 15 20 25 JO 2 4 10 20 40 100
VCE-Collector-Emitter Voltage-V IF-Forward Current-rnA
FIGURE 2 FIGURE 3
NOTE 6: Pulse operation of input diode is required for operation beyond limits shown by dotted lines.
TEXAS ~ 3-149
INSTRUMENTS
TIL 118·1, TlL118·2, TIL 118·3
OPTOCOUPLERS
RELATIVE ON-STATE COLLECTOR CURRENT OFF-STATE COLLECTOR CURRENT

vs vs
u
°an 1.6 10000
N VCE = 0.4 V to 10 V VCE = 10 V
c( 4000
I 1.4 18 = 0 18 = 0
IF = 10 mA
"I
~ ;: 1 000 IF - 0
1ii 1.2 See Note 7 !
:; 400
""
~ 1.0
U
(; 100
;J
-/
r------ '-.... t>
.!! 40
0.8 _ . - .. -- ._-
.
~
..,
Gi
a:
0.6 _
V ---
..L ~.-
"0
u
!
'"
ci)
10 /
4
0.4 ---
:::
0
I /
0.2 ~-- - - :=
CI 0.4
§
o o 0.1 /
'C
r+
"'-75 -50 -25 0 25 50 75 100 125 o 10 20 30 40 50 60 70 80 90 100
o TA-Free-Air Temperature- °C T A.- Free-Air Temperature- °e
n
o FIGURE 4 FIGURE 5
I::
'C
COLLECTOR CURRENT
...
CD
en
INPUT DIODE FORWARD vs
CONDUCTION CHARACTERISTICS MODULATION FREQUENCY
u; 160 10
Vce 10 V- .
._.
0 See Note 7
I I 18 - 0
Dr 140 4
r+
...
0
120
TA = 25°C
I c(
E 2
TA = 25°e --
-
c(
en E
;:
I
100
I 1-c:
"~ - ~" I
! f--- - RL - 1 k{l
:; u I---
u 80 (; 0.4
~.
- - ~ RL - 475 {l 21\- -'I
.
"E
~ 60 III I t>
'5"
u
0.2 ~+ .-t RL - 100 {l '\
I
I
"
~
CI
LL
I 40
TA - 70°C I / 9
I 0.1
- -
_.
.. -
20
II 0.04
..
~ ~A-
0.02
o -55°e
0.01 i
o 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 4 10 40 100 400 1000
FIGURE 6 FIGURE 7
NOTE 7: These parameters were measured using techniques. tw = 1 ms, duty cycle .:5 2%.
3·150 TEXAS . "

INSTRUMENTS
TlL120. TIL121
OPTOCOUPLERS
01956, NOVEMBER 1974

• High Overall Current Gain __ .1.0 Typ (TIL 121)
• High-Gain, High-Voltage Transistor ... V(BR)CEO = 35 V Min
• High-Voltage Electrical Isolation ... l-kV Rating
• Stable Over Wide Temperature Range
mechanical data
4 LEADS 0,483 (0.019) DIA

0.406 (0.016) 14--.1- 2,54 (0.100) DIA
.--
4,96 (0.195)
4,52 (0.178) -.
en
DIA
--L- ~ ....o
C'O
I '0
-..
5,84 (0.230) 0,76 ( 0 ' 0 3 0 ) U
4,31 (0.209) MAX ~ .!!!
DIA
12,7 (0.500) en
MIN Q)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALL V IN INCHES. C.

ALL JEDEC TO·72 DIMENSIONS AND NOTES ARE APPLICABLE :::s
o
(.)
....o
Q.
o
Input-to-Output Voltage . ±1 kV
Collector·Emitter Voltage 35 V
Emitter·Collector Voltage 7V
Input Diode Reverse Voltage 3V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (See Note 1) 40 mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) . , , 190mW
Operating Free-Air Temperature Range. . . . . . . . . . . _55°C to 125°C
Storage Temperature Range .............. . -55°C to 150°C
2. Derate linearly to 125°C free-air ter('lperature at the rate of 1.9 mW/oC.
=~:~~i~8r~:,~1e ~~~::i:: ~lo:=::::9t:~~s not TEXAS . "
INSTRUMENTS
3-151

TIL 120, TlU21
OPTOCOUPLERS

TIL 120 TIL 121
VIBRICEO CollectorMEmitter Breakdown Voltage IC-1 rnA, IF = 0 35 35 V
V(BR)ECO Emitter·Coliector Breakdown Voltage IE= 1001'A, IF ~ 0 7 7 V
IR Input Diode Static Reverse Current VR = 3 V 100 100 I'A
IClonl On-State Collector Current VCE=5V, IF = 10mA 2.5 Ii 5 10 rnA
VCE=20V. IF =0 6 100 6 100 nA
ICloffi Off-State Collector Current VCE = 20V, IF =0,
4 4 I'A
TA= 100"C
VF Input Diode Static Forward Voltage IF = 10mA 1.3 1.3 V
IC - 2.5 rnA, IF = 20 rnA 0.3
VCEls.,1 Collector-Emitter Saturation Voltage V
IC= 10 rnA, IF=20mA 0.3
rjo Input-ta-Output Internal Resistance Yin-out = ±1 kV, See Note 3 10 " 1012 1011 10'2 n
Vin-aut - 0, f = 1 MHz,
Cio Input-ta-Output Capacitance 2.5 2.5 pF
See Note 3
NOTE 3: These parameters are measured between both input diode leads shorted together and both phototransistor leads shorted together.
E
o 'r
PARAMETER
Rise Time
Fall Time
TEST CONDITIONS
VCC=20V,
RL=100n,
IClonl = 5 rnA
See Figure 1
MIN
TIL120
TYP
3
3
MAX
20
20
MIN
TIL 121
TYP
6
6
MAX
20
20
UNIT
I's
"0 If
r+
o
n
o
I:
"0
...
Ci"
(II
(II
o
iii
r+
...
o
-
(II
3-152 TEXAS . "

INSTRUMENTS
TlL120, TIL121
OPTOCOUPLERS

IC(on) = 5 mA
INPUT
700 n
o..J L
.--r--ioIIt-,,""~NY-<lINPlJT
~f-"",--oOUTPUT
(See Note hi OUTPUT
NOTES: a, The input waveform is supplied by a generator with the following characteristics: Zout = 50 n, tr 0;;;; 15 ns, duty cvcle ~ 1%,
tw= 100J,l.s.
b. Waveforms are monitored on an oscilloscope with the following characteristics: tr 0;;;; 12 ns, Rin;a, 1 MfI., Gin ~ 20 pF.
...en
....o
C'a
'0
n
TlU~
COLLECTOR CURRENT
TlU~
COLLECTOR CURRENT
n
-...
.!!!.
en
Q)
50 50
C.
! I ::I
--- ---
TA = 25 C
See Note 4 IF=40m~ o
(.)
40 40
o
....
«
~
E
30 ....-
---- I
IF=30mA_
«
E
~ 30
o
Q.
~ ( I---- ~
u I u
J
j I~
-
f-'
-
IF=20m~
20 20
0
~
0
u
u
I I I
!:?
10
.r- IF=10~A-=
!:?
10
I
o I 0
o 5 10 15 20 25
0 10 15 20 25
VCE-Collector~Emitter Voltage-V VeE-Collector-Emitter Voltage-V
FIGURE 2 FIGURE 3
NOTE 4: This parameter was measured using pulse techniques. tw = 100 ~s, duty cycle = 1%.
TEXAS . " 3-153

INSTRUMENTS
TIL120, TIL121
OPTOCOUPLERS
NORMALIZED ON-5TATE COLLECTOR CURRENT
INPUT DIODE FORWARD CONDUCTION CHARACTERISTICS FREE·AIR TEMPERATURE
40 u 1.6
TAz25°C veE ~ 5V
35 ~ 1.4 - I F = 10mA
r- "
"
~
30
25
'lii 1.2
.
> 1.0
V --- ........
~i'..
~ 20 .~ 0.8
E
1 15
&'
~ 0.6
"-- .........
i,. 10 " 0.4
g
~ 0.2
o 0.2 0.4 0.6 0.8 1.0

IJ 1.2 1.4 1.6 1.B 2.0
"
-75 -50 -25 25 50 75 100 125
VF-Forward Voltage-V T A- Free-Air Temperature-aC
Eo
FIGURE PHOTOTRANSISTOR COLLECTOR CURRENT FIGURE 5
100
VeE = 5 V
40
1
TA 2SOC
'0 ~ 10
TIL121 v.;
r+
o "
C"l
o
c: ..j ~T IL120
'0
".~ 0.4
...
CD
til J 0.1
.y 0.04
til II,
o 0.01
or
r+
0.1 0.4 10
IF-Input-Diode Forward Current-mA

100
TILl20
...
o OFF-5TATE COLLECTOR CURRENT FIGURE 6
~
LOAD RESISTANCE
FREE-AIR TEMPERA~URE
10000 100
Vee - 20V
V~E020Iv TA 2S"C IC(on) - 5 rnA
~ 1000 - I f = O / i-
40
See Note 5
1=
r- tw= 100/,s
~
~
~ 100
/ ~
10 ./
" / ~
~
1 / ~
•
~
/ "
..
~
I
'/
1 .§
NO.4
0.00 1 0.1
-50 -25 25 50 75 100 125 10 100 1000 10000
RL -Load Resistance-U
T A-free-Air Temperature-OC
FIGURE 7 FIGURE 8
NOTE 5: These parameters were measured in the test circuit of Figure 1 with RL varied between 40.n and 10 kO.
TEXAS . .
3-154
INSTRUMENTS
TlL124, TIL125, TIL126
OPTOCOUPLERS
02227, MAY 1977-REVISEO DECEMBER 1982

to a Silicon N-P-N Phototransistor
• High-Voltage Electrical Isolation ___ 5000-V Rating
• High-Speed Switching: tr = 2 I1S, tf = 2 I1S Typical
• Typical Applications Include Remote Terminal Isolation,
SCR and Triac Triggers, Mechanical Relays, and Pulse Transformers
mechanical data
6-lead frame encapsulated within an electrically nonconductive plastic compound. The case will withstand soldering
ion Leads are within 0,13 mm (0.005 inch) radius of

b. true position (T.P.) with maximum material
-...
VI
Pin 1 identified by index dot.
...
o
CO
'0
-...
1. Anode } Infrared--emitting
2. Cathode diode .!!?
4. Eminer } VI
~
6. Base
a.
FALLS WITHIN JEDEC MO-OOl AM DIMENSIONS :::I
o
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) ...a.
o
Input-to-Output Voltage .... . ±5 kV

o
Collector-8ase Voltage .... . 70 V
Collector-Emitter Voltage (See Note 1) 30 V
Emitter-8ase Voltage . 7V
Input-Diode Reverse Voltage . 3V
Input-Diode Continuous Forward Current 100mA
Continuous Power Dissipation at (or below) 25°C Free-Air Temperature:
Infrared-Emitting Diode (See Note 2) ......... . 150mW
Phototransistor (See Note 3) . . . . . . . . . . . . . . 150mW
Total, Infrared-Emitting Diode plus Phototransistor (See Note 4) 250mW
Storage Temperature Range . . . . . . . . . . . . _55°C to 150°C
Lead Temperature 1,6 mm (1/16 inch) from Case for 10 Seconds . . . . 260°C
2. Derate linearly to 100°C free-air temperature at the rate of 2 mW/'C.
3. Derate linearly to 100"C free-air temperature at the rate of 2 mWtC.
4. Derate linearly to 100"C free-air temperature at the rate of 3.33 mW/'C.
~~~~::~~i~8i~:I~"'~ ~!:~~~tj:: ~Io::::~:t:~s~s not TEXAS. 3-155
INSTRUMENTS
TIL 124, TIL 125, TlL126
OPTOCOUPLERS
•
TIL 124 TIL125 TIL126
Collector-Base IC= 101lA, IE = 0,
V(BR)CBO 70 70 70 V
Collector-Emitter IC-l mA, IB = 0,
V(BR)CEO 30 30 30 V
Em itter-Base IE = 101lA, IC= 0,
V(BR)EBO 7 7 7 V
Input Diode Static
IR VR = 3V 10 10 10 "A
Reverse Current
Phototransistor VCE= 10V, IF=10mA,
On--5tate 1 3 2 5 5 9 mA
Operation IB =0
IC(on) Collector
Photodiode VCB-l0V, IF -10mA,
Current 5 20 5 20 5 20 "A
Operation IE =0
Phototransistor VCE= 10 V, IF - 0
Off-State 1 50 1 50 1 50
Operation IB = 0
IC(off) Collector nA
•
Photodiode VCB=10V, IF - 0,
Current 0.1 20 0.1 20 0.1 20
Operation IE =0
Transistor Static
VCE=5V, IC= 10mA,
Forward Current 50 100 100 200 100
hFE , IF =0
550
Transfer Ratio
o
"C VF
Input Diode Static
Forward Voltage
IF=10mA 1.2 1.4 1.2 1.4 1.2 1.4 V
r+
o VCE(sat)
Collector-Emitter IC=l mA, IF=10mA,
0.25 0.4 0.25 0.4 0.25 0.4 V
C1 Saturation Voltage IB = 0
o Input-ta-Output
s::: qa Internal Resistance
Vin-out - 500 V.
See Note 5 10 11
10 11 10 11 n
"C
CD
.., Cio
I nput-ta-Output
Capacitance
Vin-out - 0,
See Note"5
f 1 MHz,
1 1.3 1 1.3 1 1.3 pF
C/I
..-... NOTE 5: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.
(jj
o
S switching characteristics at 25°C free-air temperature
o
.., PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
-
C/I tr
tf
Rise Time
Fall Time
Phototransistor
Operation
VCC=10V, IC(on) = 2 mA,RL = 100
See Test Circuit A of Figure 1
n, 5
5
10
10 Il'
tr Rise Time Photodiode VCC=10V, IC(on) - 20 "A,R L - 1 kn, 1

tf Fall Time Operation See Test Circuit B of Figure 1 1 '"
3-156 TEXAS . "

INSTRUMENTS
TIL 124. TIL 125. TIL 126
OPTOCOUPLERS

IC(on) = 2 rnA (Test Circuit Al or
le(on) = 20 J.l.A (Test Circuit B)
INPUT
47 n o..J L
.r-If-.....-<> 0 UTP UT
(See Note b)
RL"00n
OUTPUT '---_-0 OUTPUT
(See Note b)

NOTES: a. The input waveform is supplied by a generator with the following characteristics: Zout == 50.n, tr ~ 15 ns, duty cycle ~ 1%,
tw = 100 IJ,s.
b. The output waveform is monitored on an oscilloscope with the follow"ing characteristics: tr';;;; 12 ns, Rin;;;;' 1 MH, Gin ~ 20 pF.
FIGURE 1-SWITCHING TIMES -...

I II
...
~
o
o
-...
III
COLLECTOR CURRENT
III
Q)
vs
INPUT-DIODE FORWARD CURRENT c..
:::I
100
~VCE 10 o
o
40 =18 0
-TJ = 25°C ·I'L12G y / ...
o
C-
10
O
4
Ill: !4·
1
/
0.4
/
0.1 /
n n~
0.01 V VII1 II IIII

0 ..1 0.4 4 10 40 100
IF-Forward Current-rnA
FIGURE 2
TEXAS ~ 3-157
INSTRUMENTS
TIL 124, TIL 125, TIL 126
OPTOCOUPLERS
TlL124 TIL125

vs vs
COLLECTOR-EMITTER VOLTAGE COLLECTOR·EMITTER VOLTAGE
60 60 --
~"p
\J 18 = 0
TA=25°C
I~
I»
1)<
18'~ I)
TA: 25°C
't'-t
50 - 50 -- --- See Note 6
1)<
See Note 6- 10
« l('l « 10
E 10 E I~
.!.c 40 \~ -- .!.c 40 r-- ------l,ez-
~ ,{. ~ \0
C-
u"
\ 0 u" \ C-'
30 ,'iJ, a 30 <fl
,1..0
- - --
20
'fL ,O~
, «'1>
~
1>
"0
u 20
If =
40 mA ,Oft-:
.«'--
---1>
- --- -
--
'to.... D/SS
IF = 40 mA~ <:.IPA,r-, - -- -- ~
I {\F=30mAj_~...pIS - - - -
,SIPA, r- I
' t.:-:grv- --- -- V- I I' = 20 mA ' , IOrv
-- -- -.~
- ..
IF - 30 mA
10 ~ 10
I~ 20 mA IF=10mA ! --j
IF -10 mA
o
0 2 4 6 8 10 12 14 16 18 20 o 2 4 6 8 10 12 14 16 18 20
'0
P+ VCE-Collector-Emitter Voltage-V VCE--Collector-Emitter Voltage-V
0
(') FIGURE 3 FIGURE 4
0
c: TlL126
.
'0
Ci'
til
COLLECTOR CURRENT
vs
COLLECTOR·EMITTER VOLTAGE
vs
til
0
Qj 1.4
VCE = 0.4 V to 10 V
18 = 0 T-T=l
..
P+
0
«
~
~
IF = 10 mA
1.2 _ See Note 7 --
-
til E
.!.c
~
""
-;;;
> 1_0
f---""
r--
u"
B
~
V ............
a
1>
~
.
-;:;
a;
0.8
/
0: 0_6
"0 ~
u c
I ~
~ " 0.4
u
~
~ 0.2
~
"0
u 0
o 2 4 6 8 10 12 14 16 17 20 -75 -50 -25 0 25 50 75 100 125
VCE-Coliector·Emitter Voltage-V T A-Free-Air Temperature-°c
FIGURE 5 FIGURE 6
7. These parameters were measured using pulse techniques. tw = 1 ms, duty cycle" 2%.
3-158 TEXAS
INSTRUMENlS
..If
TIL 124, TIL 125, TIL 126
OPTOCOUPLERS
OFF·STATE COLLECTOR CURRENT NORMALIZED TRANSISTOR STATIC FORWARD

FREE·AIR TEMPERATURE vs
w
U-
.s:
ON·STATE COLLECTOR CURRENT
10000
I 1.6
VCE 10V o VCE - 5 V
4000 .~
«c: 18 0 IX: 1.4
IF = 0
.I-c: 1000 IF - 0 TA = 25°C
~ 400 1.2
:;
!
C,) ./
100 ./
l3 1.0
~" 40 ::l
"0 C,) 0.8
C,)
/ ~ ,/
10
~
.'!l
0.6
0'" 4 u-
o
25 / "
.~ 0.4
I
U;
~
!:?
0.4
0.1
o
/
10 20 30 40 50 60 70 80
T A-Free-Air Ternperature-°c
90 100
~
n;
z
E
<;
0.2
o
0.1 0.2 0.4 2 4
Normalized to 1.0
at IC = 1 rnA
10 20 40 100
II
-...
I II
FIGURE 7
IC(on)-On·State Collector Current-rnA
FIGURE 8 ...o
t'O
"0
-...
III
INPUT DIODE FORWARD COLLECTOR CURRENT
vs
CONDUCTION CHARACTERISTICS III
MODULATION FREQUENCY
160 I I 10 ~
See Note 7 Vce 10 V C.
140 II I 18 0 ::::I
4
« 120
TA=25°C
H1 «
E 2
TA = 25°C
RL=100n
o
CJ
...
o
E
I
1: 100
I I
1:
t
::l
..::::--"
o
c.
t
::l
C,)
0.4 RL 1 kn
80
~
C,)
~
'"~ 60
III I ~
"0
0.2
IIII
IIII
\
1\
/
C,)
0
I 0.1
U- TA=70°C/ RL 475 n
I 40 !:?
U-
20
II 0.04
~ 1,/
TA = _55°C 0.02
0
I I 0.01
o 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 4 10 40 100 400 1000
VF-Forward Voltage-V f-Modulation Frequency-kHz
FIGURE 9 FIGURE 10
NOTE 7: These parameters were measured using pulse techniques. tw = 1 ms, duty cycle"';: 2%.
TEXAS •
INSTRUMENTS 3-159
•
o
"C
r+
o
(')
o
s:::
"C
CD
...
f/)
f/)
o
g)
r+
...
o
-
f/)
3-160
TlL127, TlL128A
OPTOCOUPLERS
02328, MAY 1977-REVISEO JUNE 1989
• Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N·P·N

Darl ington·Connected Phototransistor
• High Direct·Current Transfer Ratio ... 300% Minimum at 10 mA
• High·Voltage Electrical Isolation ... 5000·Volt Rating
• Plastic Dual·ln·Line Package
• Typical Applications Include Remote Terminal Isolation, SCR and Triac Triggers,
Mechanical Relays, and Pulse Transformers
• No Base Connection on TIL 128A for Environments with High Electromagnetic Interference
mechanical data
The package consists of a gallium arsenide infrared·emitting diode and an n-p·n silicon phototransistor mounted on a
6·lead frame encapsulated within an electrically nonconductive plastic compound, The case will withstand soldering
temperature with no deformation,and device performance characteristics remain stable when operated in high·humidity
~~
•
8.38(0.3301 NOTES:
®®0 a. Leads are within 0,13 mm (0.005 inch) radius of
,~,xoo,a
-...
~ ~ b. Pin 1 identified by index dot.
>
7.62!O.300IT,P. IS-Noah)
CS-Note_, Terminal connections: I/)
6,6110.2801
000 1- Anode Infrared-emitting
...o
5f'--
6.0910.2401
~ -
5.4610.2151 2. Cathode diode
},-
2,9210.1151
3. No internal connection CO
I"
6 PLACES
(5
- SEATING PLANE
1 I .....L
-i
4. Emitter
5. Collector
I/)
~14-900
'os' l 0,3115 10.012:
~I
1.7810.~ --.J 1,01 (0.040)
6. TIL 127: Base transistor
...
]JL
0.6110.020) MIN I /)
..,~ 3~"D.I601 'mo~1 TIL 128A: No internal
3,"jO.12S1
1,2110.0601
4 PLACES O,53410.G211
connection ~
2,5<iljo.TOOIT.P.
O,3ITjO.oT61
6 PLACES c.
jS.Nou.1 :::s
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES. o
FALLS WITHIN JEDEC MO-001AM DIMENSIONS u
...oc.
Input-to-Output Voltage . . . . . . ±5 kV o
Collector· Base Voltage (TI L 127) . . . 30V
Collector· Emitter Voltage (See Note 1) 30V
Emitter·Coliector Voltage 7V
Emitter-Base Voltage (TIL 127) . . . . 7V
Input·uiode Continuous Forward Current, 100mA
Infrared· Emitting Diode (See Note 2) 150mW
Phototransistor (See Note 3) 150mW
Total (Infrared-Emitting Diode plus Phototransistor, See Note 4) 250mW
Storage Temperature Range ........... . -55°C to 150°C
2. Derate linearly to 100°C free-air temperature at the rate of 2 mW/C.
3. Derate linearly to 100°C free-air temperature at the rate of 2 mWlC.
4. Derate linearly to 100°C free-air temperature at the rate of 3.33 mWlC.
PROOUCTION DATA documants contain information Copyright © 1989, Texas Instruments Incorporated
TEXAS . . 3-161
~~~~~:~~i~ai~:I~~~ ~!:~:~ti:r l!~o::;:::::t:~':' not INSTRUMENTS
TIL 127, TIL 128A
OPTOCOUPLERS
electrical characteristics at 25°C fre~-air temperature

TIL127 TIL 12SA
PARAMETER TEST CONDITIONSt UNIT
Collector-Base
V(BR)CBO IC= 10v.A. IE = 0, IF= 0 30 V
Breakdown Voltage
Collector-Emitter
V(BR)CEO IC=l rnA. IB=O. IF =0 30 30 V
Breakdown Voltage
Emitter-Base
V(BR)EBO IE = 10v.A. IC=O. IF= 0 7 V
Breakdown Voltage
Emitter-Collector
V(BR)ECO IE=10v.A. IF =0 7 V
Breakdown Voltage
Input Diode Static
IR VR~3V 10 10 v.A
Reverse Current
On-State VCE-l V. IB O. IF-lOrnA 30 100
IC(on) rnA
Collector Current VCE - 1 V. IF=10mA 30 160
Off-State
IC(off) VCE = 10V. IB=O. IF = 0 100 100 nA
Collector Current
Transistor Static
hFE Forward Current VCE= 1 V. Icl0mA. IF =0 15000
E
o
VF
VCE(sat)
Transfer Ratio
Input Diode Static
Forward Voltage
Collector-Emitter
Saturation Voltage
IF=10mA
IC 125 rnA.
IC = 30 rnA.
IB=O.
IF-10mA
IF=50mA
1.5
1.2
1.5
1
V
V
"0
r+ Input-ta-Output
o '10 Vin-out = 500 V. See Note 5 10 11 10 11 n
n Internal Resistance
o Input-ta-Output
c Cio
Capacitance
Vin-out = 0, f= 1 MHz. See Note 5 1 1.3 1 1.3 pF
"0
...
CD NOTE 5: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.
(I) tReierences to the base are not applicable to the TIL 128A .
switching characteristics at 25°C free-air tempersture
(I) TIL127 TIL12BA
o PARAMETER TEST CONDITIONSt
UNIT
i»
r+ tr Rise Time VCC= 15 V. IC(on) = 125 rnA. 300
...
o tf Fall Time
Rise Time
RL = 100 n. See Figure 1 300
v.s
~ tr VCC= 10 V. IC(on) - 2.5 rnA. 300

IlS
tf Fall Time RL = 100 n. See Figure 1 300

r-- -l47!!
.,L I I ~ WIo-O INPUT
IClonl - 125 mA ITIL 1271
IClonl - 2.5 rnA (TIL 128AI
~
-:NI INPUT 0--1 L
I I
Vee ~ I I OUTPUT
- L ___ -.J "L=I001l OUTPUT
TEST CIRCUIT = VOLTAGE WAVEFORMS

The input waveform is supplied by a generator with the following characteristics: Zout:::: 50 n, tr <; 15 ns, duty cycle ~ 1%,
tw= 500J,l.s.
b. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 12 ns, Ain ;;:. 1 Mn, Cin < 20 pF.
FIGURE I-SWITCHING TIMES
3-162 TEXAS . "

INSTRUMENTS
TIL127. TIL128A
OPTOCOUPLERS

vs vs
COLLECTOR·EMITTER VOLTAGE COLLECTOR·EMITTER VOLTAGE
120 200
~fJ;/~X
18 = n
100
TA = 25°C 180
II / ('J.~~ / I:'1\)1
\'/~'+ \~ I>-
160 <0. ~
« « !IF=30mAf:,1>d°1- --\\)/
E E 140 i I 1\ ~O'-~1<-l~-
.!.c 80 I
l: IF = 40 mA rI " '1o.<J('0
t t 120 r-. ~-vO'--
IF=50mA / ,01-
u" 60 u" 100
a ::;
1) 1)
~ 80 / ""
~
0
u
40 0
u 60
I[
I
,
I
!::? !::?
40 18 = 0
20
j
0
0 0.4 0.8 1.2 1.6 2.0 2.4
20
0
o 0.2 0.4 0.6 0.8
TA = 25°C
See Note 6
II
1.2 1.4 1.6 1.8 2
II
-
VCE-Coliector·Emitter Voltage-V VCE-Collector·Emitter Voltage-V ...o
(/)
FIGURE 2
....CO
FIGURE 3
"0
-...
(/)
COLLECTOR CURRENT OFF·STATE COLLECTOR CURRENT
vs vs ( /)
INPUT·DIODE FORWARD CURRENT FREE·AIR TEMPERATURE
~
400 1000 c.
VCE = 1 V ~
VCE=1 10V
«::t o
18 = 0 18 = 0 / (.)
o
« 200 TA = 25"C .!.c 100 r- IF = 0 ....
E
.!.c
/
V I-
t
u" 10
/ o
c.
t
/
100
B
u" il
70
a 0
1)
~
~~
II
u
'"ro
V
L
~
0 40
u §
I / 0.1
!::?
20
/
/
15I
:E 0.01
/
/
E.
!::?
10 / 0.001
2 4 7 10 20 40 70100 o 25 50 75 100 125
IF-Forward Current-mA T A-Free·Air Temperature-°c
FIGURE 4 FIGURE 5
TEXAS . " 3-163

INSTRUMENTS
TIL127. TIL128A
OPTOCOUPLERS
TIL127
RELATIVE COLLECTOR·EMITTER TRANSISTOR STATIC FORWARD
SATURATION VOLTAGE CURRENT TRANSFER RATIO
vs vs
FREE·AIR TEMPERATURE COLLECTOR CURRENT
2l, 1.6 2!/,000

13 IC = 125 mA o VCE = ,'y
"0 1.4 ~ IB =0 .~ f-IF=O
> cr:
c U IF =50 rnA TA = 25°C ~
--
~ 20,000
0°
.- '" ~c \
1;;N
3. II
1.2
r-- .
~~ 1.0 t=
C 15,000 1/
O.B
t
u"
0.6
"E 10,000
~
o
/
,u.
0.4
0.2
.."
.;::;
Vi
5,000
I
UJ
o
'C
o
u.
.c o
r+ -75 -50 -25 0 25 50 75 100 125 0.1 0.4 4 10 40 100 4001000
o T A-Free·Air Ternperature-°c Ic-Collector Current-rnA
(')
o
s: FIGURE 6 FIGURE 7
'C
CD
... INPUT DIODE FORWARD
til CONDUCTION CHARACTERISTICS
160
til See Notl• 7
o 140 I I
ii)
r+
...
o « 120
TA = 25°C
HI
-
til E
.!.c 100 I I
t
u" BO /
"E
~ 60 /'
0
u.
I
u. 40
TA = 70°C /J /
20
1// /
~ t/
TA = _55°C
0
'] I
o 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FIGURE 8
NOTE 7: This parameter was measured using pulse techniques. tw =1 ms, duty cycle oS; 2%.
3-164 TEXAS . "

INSTRUMENTS
POST OFFICE BOX 655303 • DALlAS, TEXAS 76266
TIL 153. TIL 154. TIL 155
OPTOCOUPLERS
D2491, SEPTEMBER-REVISED DECEMBER 1982
UL LISTED - FILE # E65085

• GaAs-Diode Infrared Source Optically Coupled
to a Silicon N-P-N Phototransistor
• Direct-Current Transfer Ratio ... 10% to 50%
• Plug-In Replacements for TI L111 Series
• High-Voltage Electrical Isolation ... 2500 V RMS (3535 V Peak)
mechanical data
6-lead frame encapsulated within an electrically nonconductive plastic compound. The case will withstand soldering
:::~~~~:~~
I~~~I
'i.EJ'i. ;0::;:::::"
NOTES:
',':':0::"0;0 a. Leads are within 0,13 mm {0.005 inch} radius of
t 661 (0260)
-S09102oWl
546(0215)
o°o \.!.I\::J
ISee Note c)
fi1- j'''''''''---~'''"'::::;~;'' Terminal connections'

I 1. Anode
2. Cathode
}Infrared-emitting
diode
...o
II)
~
SEATING PLANE+= .-L .....
tJ JL
03(510012) 178{O070I__ --J'--1,OlI 0 ,0401
l 90 o 203 {O 008) 051(0020) II MIN CO
.,I~ '.~".""'~~
4. Emitter
\ 3,81 (0.150) 1.27 (0.060) 5, Collector '0
-...
3,17(0.1251 • PLACES ~ II)
0.381(0.016) 6. Base
2,54(0100) T,P. ---- 6 PLACES
(SeoNo,eal
FALLS WITHIN JEDEC MD-001AM DIMENSIONS II)

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES Q)
absolute maximum ratings at 25° C free-air temperature (unless otherwise noted)

C.
::l
Input-to-Output RMS Voltage (See Note 1) 2500 V
o
(.)
Collector-Base Voltage 70 V o
.....
Collector-Emitter Voltage (See Note 2) 30 V a.
Emitter-Collector Voltage
Emitter-Base Voltage
7V o
7V
Input-Diode Continuous Forward Current at (or below) 25°C Free-Air Temperature (See Note 3) 100 mA
Continuous Phototransistor Power Dissipation at (or below) 25°C Free-Air Temperature (See Note 4) 150mW
Storage Temperature Range _55°C to 150°C
Lead Temperature 1,6 mm (1/16 inch) from Case for 10 Seconds 260°C
NOTES: 1. This rating applies for sine-wave operation at 50 or 60 Hz. Service capabilitY is verified by testing in accordance with UL
requirements.
2. This value applies when the base-emitter diode is open-circuited.
3, Derate linearly to 100°C free-air temperature at the rate of 1.33 mA/oC.
4, Derate linearly to 100°C free-air temperature at the rate of 2 mW/oC.
PRODUCTION'DATA documents contain information Copyright © 1982, Texas Instruments Incorporated

~~~~~:~~i~ai~:1~1~ ~!~ti:~ti:r :IIO::::~:t:~~s not TEXAS
INSTRUMENTS
-I!J 3-165
POST OFFICE BOX 655303 ' DALLAS, TEXAS 75265

TIL 153, TIL 154, TIL 155
OPTOCOUPLERS

TlL153 TIL154 TILl55
Collector-Base IC-10p.A, IE =0,
V(BR)CBO 70 70 70 V
Collector-Emitter IC 1 rnA, IB 0,
V(BR)CEO 30 30 30 V
Emitter-Base IE = 10p.A, IC =0,
V(BR)EBO 7 7 .7 V
Input Diode Static
IR VR =3V 10 10 10 /J.A
Reverse Current
Phototransistor VCE = 10 V, IF = lOrnA,
On..state 1 3 2 5 5 9 rnA
Operation IB =0
IC(on) Collector
Photodiode VCB-l0V, IF = 10 rnA,
Current 10 10 10 p.A
Operation IE = 0
Pho1otransistor VCE=10V, IF = 0,
OIf-State 1 50 1 50 1 50
Operation IB =0
IC(off) Collector nA
Photodiode VCB=10V, IF =0,
Current 0.1 20 0.1 20 0.1 20
Operation IE = 0
Transistor Static Forward VCE-5V, IC -lOrnA,
hFE 50 100 100 200 100 550
Current Transfer Ratio IF =0
Input Diode Static
o
'C
VF
Forward Voltage
IF=10mA 1.2 1.4 1.2 1.4 1.2 1.4 V
r+ Collector-Emitter IC=l rnA, IF = lOrnA,

0.25 0.4 0.25 0.4 0.25 0.4 V
o VCE(sat)
Saturation Voltage IB = 0
CO)
I nput-ta-Output
o flO
Vin-out = 500 V,
1011 1011 1011 U
c: !nternal Resistance See Note 5
'C Input-ta-Output Vin-out = 0, f= 1 MHz,
1 1.3 1 1.3 1 1.3 pF
~
...
VI
Cio
NOTE 5: These parameters are measured between both input diode leads shorted together and all the phototransistor leads shorted together.
(jj
o
gr switching characteristics at 25°C free-air temperature
r+
...
-
VI t, Rise Time
tf Fall Time
t, RiseTime
Phototransistor VCC"10V,
Operation
Photodiode
IC(on) = 2 rnA,
See Test Circuit A of Figure 1
VCC"10V. IC(on) = 20 p.A,
RL=100n,
RL = 1 kn,
5
5
1
10
10
/J.S
)LS
tf Fall Time Operation See Test Circuit B of Figure 1 1
3-166 TEXAS . .
INSTRUMENTS
TIL 153, TIL 154, TIL 155
OPTOCOUPLERS

'C(onl := 2 mA (Test Circuit AI or
IC(onl = 20 ~A (Te51 Circuit BI
INPUT
r---~~I-~~~~
47 n
INPUT
O--.J L
'r~""''''''' OUTPUT
(See Note b)
RL=100n OUTPUT L..____....--o OUTPUT
(See Note b)

PHOTOTRANSISTOR OPERATION VOLTAGE WAVEFORMS PHOTOOIOOE OPERATION
NOTES: 8. The input waveform is supplied by a generator with the following characteristics: Zout '" 50 n, t r " 15 ns, duty cycle:::::: 1%,
tw = 100Jjs.
b. The output waveform is monitored on an oscilloscope with the following characte,istics: t r " 12 ns, Ain;;;' 1 M.f1., Cin" 20 pF.

-...
In
...
o
CO
'0
COLLECTOR CURRENT
vs
-...
In
In
Q)
INPUT-DIODE FORWARD CURRENT c.
~
100
VCE 10V TIL155
o
(J
40 IB 0
TA = 25°C
Yv
...o
Co
«
E
10 o
1.c: 4
T1L154
e
:; 17 '-- TIL153
()
o
tJ 0.4
~
"0 7
()
I o. 1 17
"
0.04
7
0.0 117 !IV
0.1 0.4 4 10 40 100
IF-Forward Current-mA
FIGURE 2
TEXAS • 3-167
INSTRUMENTS
TIL 153, TIL 154, TIL 155
OPTOCOUPLERS
TIL153 TIL154

vs
vs
60
,,,
I~.I liB =10
I 60
I~ IB = 0
50 I-- ~~
,-
')<
TA= 25°C_
50
I"
')<
TA = 25°C
See Note 6
See Note 6 I()
,~ <:(
<:(
E
.Lc
~
40
.. '0
10
~
E
.Lc
~
40
10
\~
\ -i.
::J
()
30
\l. ::J
()
30
\0
\c::.cJ>
\'2:. (; \ 1..0
-- -
~
SOJ
~ l:S''!b~~-9 -t>
~ 40 mp.. '0lt: ---- -
IF = . ':"'?'-i-
"0
--
"0
()
20
.t 'i-" l' ()
I
20
r IF =30 mp.. ,D,S -- --
•
I , ISSIP
5d IF = 40 mA
'D
,,:<\, 7"/0
• N-----
___ --- .Y
---IF =20 mA
,S/PA, 7"
, , ION
-- --
10
r I
I
30mA
120 mA
-', ,- 10
IF=10mA -- --
_IF 10mA
0 o
o 0 2 4 6 8 10 12 14 16 18 20 o
...
"C
o V CE-Collector-Em itter Voltage-V
2 4 6 8 10
12 14 16 18 20
C') FIGURE 3 FIGURE 4

o
C TIL 155
"C COLLECTOR CURRENT RELATIVE ON-STATE COLLECTOR CURRENT
CD
... vs vs
CII COLLECTOR-EMITTER VOLTAGE FREE-AIR TEMPERATURE
() 1.6
60
Ui IB =0 °It) VCE = 0.4 V to 10 V
o TA = 25°C
N
...oor 50 See Note 6

I<>~oImp. ....- ~
" 1.4 IS = 0
IF = 10 mA
... « ....- 10 1.2 -See Note 7
-
E W_
~ I 40
<> '30 m':.-
'"
::J
""iii
'C > 1.0
~::J W -
()
30
g
.,.
.'"> 0.8
V .............
i'-..
~
~ a; /
a: 0.6
(5 20
() 'C
I ~::J 0.4
.Y ()
10
~
~
0.2
(5
0 () o
0 2 4 6 8 10 12 14 16 17 20 -75 -50 -25 0 25 50 75 100 125
VCE-Collector-Emitter VOltage-V T A-Free-Air Temperature-°c
FIGURE5 FIGURE 6
6. Pulse operation of input diode is required for operation beyon.d limits shown by dotted lines.
7~ These parameters were measured using pulse techniques. tw = 1 ms, duty cycle" 2%.
3-168 TEXAS •
INSTRUMENTS
TIL 153. TIL 154. TIL 155
OPTOCOUPLERS
OFF-STATE COLLECTOR CURRENT NORMALIZED TRANSISTOR STATIC FORWARD

FREE·AIR TEMPERATURE vs
w
u.. ON-STATE COLLECTOR CURRENT
10000 T
o
1.6
VCE -5 V
4000 VCE - 10 V .~
«c: 18 0 a: 1.4 IF =0
1-c: 1000 IF = 0 IA" ~
TA = 25°C
~
~ 400 ~ 1.2
:J
I-
()
........--1----
9u 100 ~ 1.0
t:::J
.2 40
"0 () 0.8
()
/ 'E V
~
2l 10
0.6
~ 4 o
u..
g' u
.~ 0.4
I /
c'i)
~
g
0.4
0_1
o
L
10 20 30 40 50 60 70 80 90 100
.~
E
15
0.2
o
Normalized to 1.0
atIC,=lmA
-...
VI
0.1 0.2 0.4 2 4 10 20 40 100
z
T A-Free-Air Temperature-°c
FIGURE 7
IC(on)-On-State Collector Current-mA ....o
CO
FIGURE 8
'0
INPUT DIODE FORWARD
COLLECTOR CURRENT
vs
-...
VI
VI
MODULATION FREOUENCY Q)
160
Not~ 6
l 10 Q.
See VCC 10 V
140 J J ::J
18 0 o
« 120
TA = 25°C
HI «
E
4
2
TA 25°C
RL = 10on
....o"a.
E
I
t: 100
II C
I
t ~" o
~
:J
() 80 I :J
()
c; 0.4 RL = 1 kn
..
'E
/' 1:>
.2 0.2 II III
0
~
u..
60
TA=70°C/ j j
'0
()
I 0.1 IIII
I RL 475 n
u.. 40 !i
20
1// / 0.04
~V
TA = -55°C 0.02
0
'1 1
0,01
o 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 4 10 40 100 400 1000
FIGURE 9 FIGURE 10
NOTE 6: These parameters were measured using pulse techniques. tw "" 1 ms, duty cycle ~ 2%
TEXAS . " 3-169

INSTRUMENTS
•
o
...o
"0
(")
o
s:
"0
cr;
...
VI
VI
2-
...
III
o...
VI
3-170
TlL156. TIL157A
OPTOCOUPLERS
D2492. SEPTEMBER 197B-REVISED JUNE 1989
UL LISTED - FILE #E65085
• GaAs-Diode Light Source Optically Coupled to a Silicon N-P-N

Darlington-Connected Phototransistor
• High Direct-Current Transfer Ratio ... 300% Minimum at 10 mA
• Plug-In Replacement for TIL 113 and TIL 119A
• High-Voltage Electrical Isolation ... 2500 V RMS (3535 V Peak)
• No Base Connection on TIL 157 A for Environments with High
Electromagnetic Interference
mechanical data
The package consists of a gallium arsenide infrared·emitting diode and an n·p-n silicon darlington·connected
phototransistor mounted on a 6-lead frame encapsulated within an electrically nonconductive plastic compound_ The
case will withstand soldering temperature with no deformation and device performance characteristics remain stable
when operated in high humidity conditions. Unit weight is approximately 0.52 grams.
9'''''''''~
&I
8.31110,330)
NOTES:
000 a. Leads are within 0,13 mm (0.005 inch) radius of true
position (T.P.) with maximum material condition and
'i ~
J.6210.3OOlT.P.
IS-Note.)
'ND<XOOTU
(SoMN011Ib)
unit installed.
b. Pin 1 identified by index dot. -..
I/)
0®® Terminal connections:

o
:r-L '.---
6,6110.2&0)
6.09(0.240)
•
1. Anode } Infrared-emitting +oJ
S,46(0.215)
2. Cathode diode 1'0
_~" .---'l ~ }'"~

,----, __ 6 PLACES
3. No internal connection '0
-..
I/)
~~ t
- SEATING PLANE
..- --.L 4_ Emitter

5. Collector
~
Jl 0,51(0.020) MIN I/)

6. TIL 156 base
-j~ ~
transistor
,i
3,81(0.150)
3,17(0.125)
,,,,,00901
127(0060)
4PlM:fS 0,534(0.0211
TIL 157 A no internal ~
0,381(0.0151 connection C.
2,54(0.1001 T.P. 6 PLACES
(_N_oJ ::::J
o
U
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES. o
+oJ
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) C.
Input-to-Output RMS Voltage (See Note 1) _. _ .. __ . __ . . . . . . ____ . __ . . . . . . . . . . . . . . . . . . . . 2500 V
o
Collector·Base Voltage (TI L156) . . . . . . . . . . . . . . . . . . . . . . . . . . . __ ... ____ ... _ . . . . . . . . . . 30V
Collector-Emitter Voltage (See Note 2) .... _ ... _ . . . . . . . . . . . . . . . . . . . _ . __ .. _ . _ .. _ .. _ . 30V
Emitter·Coliector Voltage .... 7V
Emitter-Base Voltage (TI L 156) 7V
Input·Diode Reverse Voltage . _ . _ .. __ .... _ . . . . . . . . . . . . . . . . . . . . . . . . . _ . __ . _ . __ .... _ _ 3V
Input-Diode Continuous Forward Current at (or below) 25°C Free-Air Temperature (See Note 3) 100 mA
Continuous Phototransistor Power Dissipation at (or below) 25°C Free-Air Temperature (See Note 4) 150 mW
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _ .. _ .. _ . . . . . . . . ~55°Cto 150c C
Lead Temperature 1,6 mm (1/16 inch) from Case for 10 Seconds . . . _ .. _ . . . . . _ . . . . . . . . . . . _ . .. 260°C
NOTES' 1. This rating applies for sine-wave operation at 50 or 60 Hz. Service capability is verified by testing in accordance with UL
requirements.
2. This value applies when the base-emitter diode is open-circuited.
3. Derate linearly to 100°C free-air temperature at the rate of 1.33 mA/C.
4. Derate linearly to 100°C free-air temperature at the rate of 2 mW/C.
specifications par the terms of Texas Instruments TEXAS •
:~~~~:~~j~ai~:I~~e ~!:ti~~ti:r :I~o::::~:t:r~~s not INSTRUMENTS 3-171
TIL156, TIL151A
OPTOCOUPLERS

TlL156 TIL157A
PARAMETER TEST CONDITIONst UNIT
MIN TVP MAX MIN TVP MAX
Collector-Base
V(BR)CBO
Breakdown Voltage
IC= 101lA, IE = 0, IF =0 30 V
Collector-Emitter
V(BR)CEO IC=l rnA, IB=O, IF=O 30 30 V
Breakdown Voltage
Emitter-Base
V(BR)EBO IE= 101lA, IC= 0, IF=O 7 V
Breakdown Voltage
Emitter-Collector
V(BR)ECO IE = 101lA, IF =0 7 V
Breakdown Voltage
Input Diode Static
IR VR=3V 10 10 IlA
Reverse Current
On-State VCE-l V, IS =0, IF=10rnA 30 100
IC(on) rnA
Collector Current VCE= 1 V, IF-lOrnA 30 160
Off-State
IC(off) VCE = 10V, IS=O, IF =0 100 100 nA
Collector Current
Transistor Static
•
hFE Forward Current VCE= 1 V, IC = lOrnA, IF=O 15000
Transfer Ratio
Input Diode Static
VF IF=10rnA 1.5 1.5 V
Forward Voltage
o VCE(sat)
Collector-Emitter IC = 125 rnA, IB =0, IF = SO rnA 1.2
V
....
"0
o
Saturation Voltage
Input-to-Output
IC - 30 rnA, IF=10rnA 1
'10 Vin-out = SOO V, See Note 5 1011 1011 fl

(") Internal Resistance
o Input-ta-Output
c: Cio
Capacitance
Vin-out= 0, f= 1 MHz, See Note 5 1 1.3 1 1.3 pF
"0
CD
~
Note 5: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.
-ur
en
o
tReferences to the base are not applicable to the TlL157A_
PARAMETER TEST CONDITIONSt
TIL156 TIL157A
UNIT
iii"
.... Rise Time
MIN TVP MAX MIN TVP MAX
tr VCC-15V, IC(on) = 125 rnA, 300
o IlS
-
~ tf Fall Time RL = 100 fl, See Figure 1 300
en tr Rise Time VCC-l0 V, IClonl = 2.5 rnA, 300
IlS
tf Fall Time RL = 100 fl, See Figure 1 300
!

1-- -l'7!! Adjust amplitude of input pulse for:
IClonl - 125 mA (TIL 1561
J I lOIII I 'V\I'.--O INPUT IClonl - 2.6 mA ITIL157AI
- I N INPUT o.-J L
I I
OUTPUT OUTPUT
NOTES: a. The input waveform is supplied by a generator with the following characteristics: Zout"" 50 n, t r " 15 ns, duty cycle ~ 1%,
tw"" 5001-1-$.
b. The output waveform is monitored on an oscilloscope with the following characteristics: t r " 12 ns, Rin #- 1 MH, Cin " 20 pF.
FIGURE 'I-SWITCHING TIMES
3-172 TEXAS •
INSTRUMENTS
TIL156. TlL157A
OPTOCOUPLERS

vs vs
COLLECTOR·EMITTER VOLTAGE COLLECTOR-EMITTER VOLTAGE
120 200
180 I I ~:~.rX
..oJ"~ ,. ",'l-~
100
160
I / '<I+/~ «'I>-
\.?tio~<G
IIF = 30 mA f:' 1'0 0-t-),
I
« « '" \~/
E
" ~&-~_\[-
E 140
.!.c 80 .!.c IF = 40 mA rI ~ Vo
~ ~::> 120 ,.x., -?- vU---
:; U
IF = 50 mA ./ ,01-
u 60 100
<;
~ I ... ...
t> ~ 80
0
u
~
40 0
u
I 60
1/
,
I
5:? 5:?
40 18 = 0
J,
o 0.4 0.8 1.2
VCE-Coliector·Emitter Voltage-V
1.6 2.0 2.4
20
o
o 0.2 0.4 0.6 0.8
TA = 25°C
Seel Note 6
1.2 1.4 1.6 1.8 2

II
-( /)
...o
~
FIGURE 2 FIGURE 3 ctI

"0
COLLECTOR CURRENT
vs
OFF·STATE COLLECTOR CURRENT
vs
-.!!J.
( /)
~
Q)
400 1000 Q.
VCE = 1 V VCE =1 10 V :::l
18 = 0 «::1. o
18 =0 / (,)
« 200 TA=25°C .!.c 100 -IF =0
...
o
E
.!.c
~::>
/
V ..-
u
~
::>
10
/ o
c.
/
100
.9u
U ~
70
.9u 0
~
u V
/ '"
/
~
0 40 ~
u
I / i0 0.1
5:?
20
/
/ I
~ 0.Q1
/
/
.9-
5:?
10 I 0.001
2 4 7 10 20 40 70100 o 25 50 75 100 125
IF-Forward Current-mA T A-Free·Air Temperature-°c
FIGURE 4 FIGURE 5
TEXAS • 3-173
INSTRUMENTS
TIL156, T1L157A
OPTOCOUPLERS
TIL 156
RELATIVE COLLECTOR-EMITTER TRANSISTOR STATIC FORWARD
SATURATION VOLTAGE CURRENT TRANSFER RATIO
vs vs
FREE-AIR TEMPERATURE COLLECTOR CURRENT
1l, 1.6 25,000

~ IC = 125 rnA
.,
.o
VCE = ';'y
"0 1.4 - 18 =0 IF = 0
> '"
0:
c u IF =50 rnA 20,000 TA = 25°C 1\
.9°1,{)
1;;N 1.2 ~c \
---r--
:s II
/
E
~~ 1.0 I-
~ 15,000 /
<Il
t: '"
<Il
0.8
t
]~ :J
U
'- > "E 10,000
B S 0.6
~
U <Il
> ~o /
8~ u.
Eo
I <Il
>
",0:
~
w
U
0.4
0.2
o
U
.~
ell
I
w
u.
.c
5,000
o
'C -75 -50 -25 0 25 50 75 100 125 0.1 0.4 4 10 40 100 400 1000
r+
o T A-Free-Air Ternperature-DC Ic-Collector Current-rnA
n
o
I: FIGURE 6 FIGURE 7
'2..
CD INPUT DIODE FORWARD
....
en CONDUCTION CHARACTERISTICS
160
en Se~ Not~ 7
o 140 I I
Qj
r+
....o <! 120
TA = 25 DC
tJ L
-
en E
.!.c 100 II
u
t
:J
80 I
"E
'"~ 60 II' I
0
u.
I 40
TA = 70 DC /, /
u.
20
/I V
~~
TA = _55 DC
0 1 I
o 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
FIGURE 8
NOTE 7: This parameter was measured using pulse techniques. 'tw "" 1 ms, duty cycle::S;;; 2%.
3-174 TEXAS ~
INSTRUMENTS
TIL 181
OPTOCOUPLER
02906, OCTOBER 1985-REVISED MARCH 1988

• Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N
Phototransistor
• High-Voltage Electrical Isolation . 2.5 kV rms (3.535 kV peakl
• High-Speed Switching: tr - 2 JLs Typ. tf 2 JLs Typ
• UL Recognized - File # E65085
• Primarily Used with Telephone Ring Detector TCM1520A and Tone Drivers
TCM1501B. TCM1506B. TCM1512B. TCM1531. TCM1532. TCM1536.
and TCM1539
mechanical data
The package consists of a gallium arsenide infrared-emitting diode and an n-p-n silicon phototransistor
&I
remain stable when operated in high-humidity conditions. Unit weight is approximately 0.52 grams.
9.4010'370)~
-...
I II
8,38 {0.3301
®®0 ...o
CO
"0
~ -...
·
III
INDEX DDT
IS.'NO"BI~
C . ~ "'"'
III
rl .ofl-- 6.61 10.2601
C~jHll
0 0 0
~ 7861~lo;g~sMAX
IS•• No.. CI
1
Q)
0.
:::l
o(,)
...oc.
r-
~\"_
I
II ~~
SEATING PlANE
0,305 (O,.012}T
ooeil.
I ~
J
' 78 (0 070) __ ----.l L
1I
101 (0040)
o
JL
/0.203 (0 051 (0 0201 MIN
1~- 3,~1 (0
3,17 (D.12S}
1501 ~:~~ :g:g~g: ~
4 PLACES 0,534 (0.0211
0,381 (0.015\
2,54 (0.1001 T.P._ 6 PLACES
(See Note A)
B. Pin. 1 identified by index dot.
1. Anode
2. Cathode
I
Infrared-emitting diode
~
4. Emitter
6. Base

CP-7
PRODUCTIOI DATA documonts contoin informol,on Copynght © 1985, Texas Instruments Incorporated
currant as of publication date. Products conflmn to
.pacifications par tha terms of Texas Instruments
TEXAS •
==~ri~a{':I~~~ =~~i:r :~o=~~~ nat INSTRUMENTS
3-175
TIL181
OPTOCOUPLER

Input-to-output voltage .......... ,...................... ± 2.5 kV rms (± 3.535 kV peak)
Collector-base voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 V
Collector-emitter voltage (see Note 1) .... .... .... ....... . 30 V
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Emitter-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Input-diode reverse voltage ..................... '. . . . . . . . . . . . . . . . . . . . . 3 V
Input-diode continuous forward current at (or below) 25°C free-air temperature
(see Note 2) .......................................... . 100 mA
Continuous power dissipation at (or below) 25°C free-air temperature
Infrared-emitting diode (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
Phototransistor (see Note 4) ................................ 150 mW
Total, infrared-emitting diode plus phototransistor (see Note 5) . . . . . . . 250 mW
NOTES: 1. This value applies when the base~emitter diode is open·circuited.
2. Derate linearly to lOQoe free-air temperature at the rate of 1.33 mA/oC.
E
3. Derate linearly to lOQoe free-air temperature at the rate of 2 mW/oC.
4. Derate linearly to 10Qoe free-air temperature at the rate of 2 mW/oC.
5. Derate linearly to lOQoe free-air temperature at the rate of 3.33 mW/oC.
o electrical characteristics at 25°C free-air temperature

...o
'C PARAMETER
VIBR)C80 Collector-base breakdown voltage IC = 10 ~A,
TEST CONDITIONS
IE = 0; IF =0
MIN
70
TYP MAX UNIT
V
n = 1 rnA, = 0, =0
o VIBR)CEO Collector-emitter breakdown voltage
Emitter-base breakdown voltage
IC
IE = 10 ~A,
18
IC = 0,
IF
IF =0
30
7
V
V
I:: VIBR)EBO
'C IR Input diode static reverse current VR - 3 V 10 ~A
...
CD On-state
Phototransistor VCE = 0.4 V, IF = 0.8 mAo 18 =0 100 ~A
CIl collector
operation VCE = 0.4 V. IF = 10 rnA. IB =0 5 rnA
IClon)
Photodiode
(ij current
operation
VC8 = 0.4 V, IF = 16 rnA, IE =0 7 20 ~A
o Phototransistor
...
g;
ICloffl
Off·state
collector
operation
VCE = 10 V. IF = 0, IB =0 1 50
nA
...
o
CIl
current
Photodiode
operation
VCB = 10 V, IF = 0, IE =0 0.1 20
Transistor static forward current

hFE
transfer ratio
VCE = 5 V. IC = 10 rnA, IF =0 200 550
VF Input diode static forward voltage IF = 16 rnA 1.2 1.4 V

VCElsatl Collector-emitter saturation voltage IC = 5 rnA. IF = 10 rnA, 18 =0 0.25 0.4 V
'10 Input-ta-output internal resistance Yin-out " ±500 V. See Note 6 10 11 0
Cio Input-ta-output capacitance Yin-out = 0, f = 1 MHz. See Note 6 1 1.3 pF

tr Rise time VCC = 10 V. IC(onl = 2 rnA. RL = 1000, 2 10
Phototransistor operation ~s
tf Fall time See Test Circuit A of Figure 1 2 10
tr Rise time VCC = 10 V, IClon) = 20 ~A, RL = 1 kO. 1
Photodiode operation ~s
tf Fall time See Test Circuit 8 of Figure 1 1
3-176 TEXAS •
INSTRUMENTS
POST OFFICE BOX 655303. DALLAS. TEXAS 75266~
TIL181
OPTOCOUPLER

IClonl = 2 rnA ITest Circuit AI or
IClonl = 20 "A ITest Circuit 81
INPUT
47 n INPUT
47 n INPUT
0.J L ISee Note AI
n ___ (See Note A)

OUTPUT
' - - - -....-~~:~~ BI
(See Note B)

PHOTOTRANSISTOR OPERATION VOLTAGE WAVE FORMS PHOTOOIODE OPERATION
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Zout = 50 fl, tr :s; 15 ns, duty cycle"" 1 %,
tw = 100 "So
•
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr :s; 12 ns, Ain ~ 1 MD, Cin :s; 20 pF .
TYPICAL CHARACTERISTICS ...

C/)
COLLECTOR CURRENT COLLECTOR CURRENT ....o

CO
vs vs
"0
-...
C/)
600 12
18= 0
11
,..- ~mA 18 =0 C/)
500
TA = 25°C
IF = 10
(
IF -19 mA
- TA = 25°C-
CI)
1 mA « V ~ Q.
1
~ 400
0.9 mA
E
.!.c 8
9
v-- IF - 8 mA IF = 7 rnA
::::J
o
(J
~
a O.SmA
~
:;
()
7 1/6mA. ....o
c.
300 6
j 0
tJ 5
IF = 5 mA o
0.7 mA .!! IF = 4 rnA
;3I 200 '0
()
4
~ 3 mA..
0.6mA I
!:t 3 IF
0.5mA !:t
100 0.4mA 2 IF 12 rnA
0.3mA IF -1 mA
0.2mA
o o
o 2 4 6 S 10 12 o 2 4 6 8 10 12
FIGURE 2 FIGURE 3
TEXAS • 3-177
INSTRUMENTS
TIL181
OPTOCOUPLER
PHOTOTRANSISTOR COLLECTOR CURRENT RELATIVE ON-STATE COLLECTOR CURRENT
vs vs
100 u 1.4
VCE ~ 0.4 V
0",
« 50 VCE - 0.4 V N
E
.!.c
IS 0
20 TA = 25Q C
"
« 1.2
IS = 0
'~
!!
..,- ..... I-
;; 10 .,
u 5 :s 1.0
~
~~o~
!; f..--"""
tl
.!!
15
2 S
~
/
~
0.8
u .~
.~ 0.5
-;;
a: t?<9
~ 0.2
E 0.6 ~~
!!
~
if
0.1
8!;
E
0.05 0.4
E
I
0.02 ]
0.01 / 8 0.2
0.1 0.2 0.5 1 2 5, 10 20 50 100 -50 -25 o 25 50 75 100
o IF-Input-Diode Forward Current-rnA TA-Free-Air Temperature-OC
'C
r+
o FIGURE 4 FIGURE 5
n
o
t: NORMALIZED TRANSISTOR STATIC FORWARD NORMALIZED TRANSISTOR STATIC FORWARD
'C CURRENT TRANSFER RATIO CURRENT TRANSFER RATIO
CD
... vs vs
(II
...w COLLECTOR CURRENT ...w FREE-AI R TEMPERATURE
(ij T 1.3 To 1.6

VCE ~ 5 V
VCE =5 V
o .2 1.2 ',j:'
Qj ~ 1.1
IF =0
........
co
a: IC = 10 rnA
r+ ., TA = 25Q C
-........ ~ 1.4 :- IF = 0
...o i 1.0 / ~c
V
-
co
(II
~ 0.9 ..,- .:: 1.2 /
~ 0.8
8
!!
0.7
f-'"
E
~
;;
u 1.0
/v
"E 0.6
~
!;
0.5
"E
~
af O.B
V
LL 0.4
.,
~
u
~ 0.2
0.3
.u
£l 0.6
/V
_
E
0.1
0
11
.!:!
~ 0.4
V
~ 0.1 0.4 4 10 40 ~ -50 -25 o 25 50 75 100
Ie-Collector Current-rnA TA-Free-Air Temperature-oC
FIGURE 6 FIGURE 7
3-178 TEXAS •
INSTRUMENTs
TIL 186-1. TIL 186-2, TIL 186-3, TIL 186-4
AC-INPUT OPTOCOUPLERS
02981. DECEMBER 1986-REVISED JUNE 1989
• A-C Signal Input • Choice of Four Current Transfer Ratios

• Gallium Arsenide Dual-Diode Infrared • High-Voltage Electrical Isolation
Sources Coupled to a Silicon NPN 3.535 kV Peak (2.5 kV rms)
Photo-Transistor
• High-Speed Switching ... tf - 4 p.s Typ
• UL-Recognized - File # E65085
description
The TIL 186 optocoupler is designed for use in ac input signal applications that require high-voltage isolation
between input and output. Users can select from four different current gains (TIL 186-1 through TIL 186-41.
These optDcouplers consist of two GaAs light-emitting input diodes connected in a reverse-parallel
configuration for ac input applications and a silicon npn output phototransistor.
mechanical data
The package is mounted on a 6-pin lead frame encapsulated within an electrically nonconductive plastic
compound. The case will withstand soldering temperature with no deformation. Device performance
characteristics will remain stable when operated in high-humidity conditions. Unit weight is approximately
0.52 grams.
II
9,40 10'37011~
8,38103301 -...
Ul
000 ...o
~
CO
'0
r;~;~'
INDEX DOT
-...
IseeNo<eBI~ Ul
ir 0
(2) 0) (See Note C)
Ul
Q)
5,46 (0.215)
292 (0 115) c.
M
:j
o
CJ
as"
~
- SEATING PLANE
0.305 (0.012)
...-----*----..--1 ...c.o
~O.203 (O.OOB""f--_ _ _ _ _ _ _ --t
o
1 3.81 (0.150)
3,17(0.125)
~~~:~g~g: ~
4 PLACES
IL
---.
0534(0021)
038110015)
25410 100) T P 6 PLACES
(See Note Al
r--+--6
2 5
3 4

CP·7
specifications per the terms of Texas Instruments TEXAS . . 3-179
:~~~~:~~i;ai~:1~18 ~!::i~~i:f :,io::~:::;:t:~~s not INSTRUMENTS
TIL186-1, TIL 186-2, TIL 186-3, TIL 186-4

Input-to-output voltage ................................. ± 3.535 kV peak (± 2.5 kV rms)
Collector-base voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 100 V
Collector-emitter voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 55 V
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7 V
Emitter-base voltage . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7 V
Input-diode continuous forward current at (or below) 25°C free-air temperature
(see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 100 mA
Phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 50 mW
Infrared-emitting diode plus phototransistor (see Note 4). . . . . . . . . . . . . . . . . . . . . .. 250 mW
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mAl ce.
3. Derate linearly to 100°C free-air temperature at the rate of 2 mWI ae.
4. Derate linearly to lOQoe free-air temperature at the rate of 3.33 mw/oe.
..
d
'C
o
(')
o
s:::
'C
~
...
(I)
(ij
..m...
o
o
-
(I)
3-180 TEXAS •
INSTRUMENTS
post OFFICE BOX 655303 • DALLAS. TEXAS 75265
TIL 186·1, TIL 186·2, TIL 186·3, TIL 186·4
AC·INPUT OPTOCOUPLERS
electrical characteristics at 25°C free·air temperature (unless otherwise noted)

V (BR)CBO Collector-base breakdown voltage IC ~ 10 ~A, IE ~ 0, IF ~ 0 100 V
V(BR)CEO Collector-emitter breakdown voltage IC - 1 rnA, IB - 0, IF - 0 55 V
V(BR)EBO Emitter-base breakdown voltage IE ~
10 ~A, IC ~ 0, IF ~ 0 7 V
V(BR)ECO Emitter-collector breakdown voltage IE ~ 100 ~A, IB ~ 0, IF ~ 0 7 V
TIL 186-1 0.1
VCE ~ 10 V, IF ~ 2 rnA, TIL 186-2 0.2
IS ~ 0 TIL 186-3 0.5
On-state
TIL 186-4 1
collector Phototransistor operation rnA
IC(on) t TIL186-1 1
current
VCE ~ 10 V, IF ~ 10 rnA, TIL 186-2 2
IS ~ 0 TIL 186-3 5
TIL 186-4 10
Photodiode operation VCS ~ 10 V, IF ~ 10 rnA, IE ~ 0 5 12 ~A
IC(oft) Off-state collector current VCE 50 V,
~
IF ~ 20 rnA, IB ~ 0 2 200 nA
Transistor static forward current
hFE VCE ~
5 V, IC ~ 10 rnA, IF ~ 0 100 550
transfer ratio
VFt Input diode static forward voltage IF ~ 10 rnA 1 1.16 1.5 V
VCElsat) t Collector-emitter saturation voltage IC ~ 1 rnA, IF ~ 10 rnA, IB ~ 0 0.14 0.4 V
'10
Cia
Input-la-output internal resistance
Input-ta-output capacitance
Yin-out
Yin-out = 0,
~ ±500 V, See Note 5
f ~ 1 MHz, See Note 5
10 11
1 2
{J
pF -..
IIJ
IClon)1
symmetry ratio (see Note 6)
VCE ~ 10 V, IF ~ 10 rnA, IE ~ 0 1 3 o
+"
IClonl2
~
tThese parameters apply for either direction of the input current. o
-..
NOTES: 5. These parameters are measured between both input-diode leads shorted together and aU the phototransistor leads shorted IIJ
together.
6. The higher of the two IC(on) values generated by the two diodes is taken as IC(on)1. IIJ
switching characteristics at 25°C free-air temperature ~

C.
PARAMETER TEST CONDITIONS MIN TYP MAX ::J
Rise time 4 10
oCJ
VCC 10 V, IClon) ~ 2 rnA, RL ~ 1000, See Figure 1
Fall time 4 10 o
+"
C.
o
TEXAS . " 3-181

INSTRUMENlS
TIL 186·1, TIL 186·2, TIL 186·3, TIL 186·4
Adjust amplitude of input pulse is for IC(on) = 2 mA
~ r-,________--.or
(See Note AI
OUTPUT
r-T~"---(See Note B)
90%
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Zo ::::: 50 n. tr ::::: :s: 15 ns, duty cycle = 1 %.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr :5 12 ns, RI ~ 1 MO, Cj :S 20 pF.
INPUT CURRENT COLLECTOR CURRENT
VS vs
0
...
't:I
0
100
TA = 25°C
INPUT VOLTAGE
8
18 = 0
0 80 TA = 25°C I
0 7 1----
C SO
IF = 10 mA
"2. I
<3:
E S 9 mA -
r- :--
IF
...
CD
til
<3:
E
I
40
~
I
c: IF 8 mA -
~
c: 20 !!! 5
!!! :; IF = 7 mA
til :; 0 / u
4 r-
0 U
f 0 = SmA
...Ci '5c- -20
.E
t;
~
"0 3
r- IF
IF - 5 mA -
...
O I -40 I u
-til ~
-SO
I 12 IF - 4 mA
IF =3 mA
-80 IF 2 mA f - - -
IF 1 mA
-100 o
- 1.S -1.2 - 0.8 - 0.4 0 0.4 0.8 1.2 1.S o 2 4 S 8 10 12
VF-Input Voltage-V V CE - Emitter-Collector Voltage - V
FIGURE 2 FIGURE 3
3-182 TEXAS ~
INSTRUMENTS
TIL 186·1, TIL 186·2, TIL 186·3, TIL186·4
NORMALIZED ON-STATE COLLECTOR CURRENT RELATIVE ON-STATE COLLECTOR CURRENT
vs vs
u
10 ~ 1.6
~ VCE = 10 V N VCE = 10 V
0
NORMALIZED TO: D 18 = 0
Ii IF = 10 mA /' ~1.4
l
I:
"~
TA - 25°C
I-
~
.
~ 1.2
u / os IF = 2 mA
0.1 >
~
(;
13
o
';; 1.0
~
.!!
..,>
'0
u
"0
0.01 Q;
.
/ V-;F ~ lOm~ ~,
"
.J!! ~ 0.8
""
iij I:
E
(; 0.001
Z
1/
!!
:;
u 0.6 ~ ""'"
E
o
"
'i"s
0.0001
0.1 0.4 4 10 40 100 u
0.4
-50 -25 o 25 50 75
T A - Free-Air Temperature - °c
100
-...
CI)
IF-Input Current-mA
FIGURE 4 FIGURE 5
~
...
o
o
-...
NORMALIZED TRANSISTOR STATIC FORWARD NORMALIZED TRANSISTOR STATIC FORWARD CI)
CURRENT TRANSFER RATIO CURRENT TRANSFER RATIO
vs vs CI)
w COLLECTOR CURRENT w FREE-AIR TEMPERATURE
u. u.
"1o ~
1.3 1o
'<';; 1.2
VCE =5 V .,.
.
1.6
VCE ~ 5 V
C.
::::I
II: 1.1
IF = 0
TA = 25°C
-...... II:
1.4
Ic=10mA o
(,)
Q)
.=..
~ 1
/" :'-.. ~I:
..
IF = 0
/"
/ ...
o
c.
~
0.9
/' .= 1.2
V o
~ 0.8 I-""
1:
8 0.7 8
!!
1.0 /
"E 0.6
~ 0.5
..
'E
;: /
(;
~ 0.8
~ 0.4 .,
."
g; 0.3
0.2
g; 0.6
L/
/
"0
Q) il
.J!! .J!!
-;;; 0.1 -;;;
E o E 0.4
(; 0.1 0.4 4 10 40 ~ -50 -25 o 25 50 75 100
z
IC-Collector Current-mA TA-Free-Air Temperature-OC
FIGURE 6 FIGURE 7
TEXAS .." 3-183

INSTRUMENTS
o
"C
r+
o
CO)
o
c::::
"C
CD
....
en
en
o
ii)
r+
o
....
-
en
3-184
TIL 187·1 THRU TIL 187·4
AC·INPUT OPTOCOUPLERS/OPTOISOLATORS
02980. JANUARY 1987-REVISED JULY 1989
• AC Signal Input • High Current Transfer Ratio. 500% Minimum

at IF - 10 rnA. Up to 1500% Minimum at IF
• Gallium Arsenide Dual-Diode Infrared Source
= 2 rnA with Four Categories
Optically Coupled to a Silicon N-P-N
Darlington Phototransistor • High V(BR)CEO. 55 V Min
• Plastic Dual-In-Line Package • UL Recognized - File # E65085
• High-Voltage Electrical Isolation. 3.535 kV • No Base Lead Connection on TIL 188 for High-
Peak (2.5 kV rms) EMI Environment
description
The TIL 187 and TIL 188 Optocouplers are designed for use in AC applications that require very high current
transfer ratio and high voltage isolation between input and output. These optocouplers consist of two GaAs
light-emitting diodes connected in a reverse-parallel configuration and a silicon n-p-n Darlington
phototransistor. The TIL 187 has the base connected for applications where a base signal or base resistor
is required. The TIL 188 is designed with no base connected for applications where high base-noise immunity
is desired. Users can select from four different current gains (TIL187-1 through TIL 187-4 and TIL 188-1
through TIL 188-4).
mechanical data
II
-
9,40
8,38
(O'370)~
(0.3301 ...en
@@0 ...o
~
F=i o
en
-...en
INDEX DDT
IS"NO"BI~
6,61 (0.260\
6,09 (0.240) (2) 0 0 (See Note C)
(I)
5,46 (0.215)
2,92(01151
Q.
~ SEATING PLANE 4
-.----"----.L-..--Iffif 786(~lo:.g~sMAX 1
~
o
CJ
...
o
lJ JL
1,78 (0.070) L
-----..l 101 (0040) Q.
0203 (0 aDB} 0,51 (0.020) -I I MIN
o
1~~ 3,81 (O.150)
3,17 10.125)
~:~; :g:~~g:
4 PLACES 0,534 10.021)
0,381 10.015)
2,54 la.100} T.P. 6 PLACES
(See Note Al
1. Input ~
2. Input \ Infrared-emitting diode
i: ~~\~i~~:la::nnection~ Phototransistor
TIL 188: No internal connection TIL187 TIL188
FALLS WITHIN JEDEC MO·001AM DIMENSIONS

specifications per the terms of Texas Instruments TEXAS •
~~~~:~~i~ei~:1~1i ~!:~~~ti:; :llo::~:;:::t:is~S not INSTRUMENTS 3-185
TlL187·1 THRU TIL 187·4
absolute maximum ratings at 25°C free·air temperature (unless otherwise noted)

Input-to-output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±3.535 kV peak or dc (±2.5 kV rms)
Collector-base voltage (TIL 187) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 100 V
Emitter-base voltage (TIL 187) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 14 V
25 DC free-air temperature (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 rnA
Infrared-emitting diode (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1 50 mW
Phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1 50 mW
Total, infrared-emitting diode plus phototransistor (see Note 4) .................. 250 mW
Lead temperature 1,6 mm (1116-inch) from case for 10 seconds ...................... 260°C
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mA/oC.
Eo
...o
"0
C')
o
c:
"0
(I)
....
C/)
C/)
o
...o....
Qi
C/)
3-186
TEXAS •
INSTRUMENTS
TlL187·1 THRU TIL187·4

TIL 187 TIL 188
Collector-base IC ~ 10 ~A, IE ~ 0,
V(BR)CBO 100 V
breakdown voltage IF ~ 0
Collector-emitter IC ~ 1 mA, IB ~ 0,
V(BR)CEO 55 55 V
Emitter-base IE ~ 10 ~A, IC ~ 0,
V(BR)EBO 14 V
Emitter-collector
V(BR)ECO IE ~ 10 ~A, IF ~ 0 7 V
breakdown voltage
TIL187-1, TIL188-1 5 5
TIL 187-2, TIL 188-2 VCE ~ 1 V, IF ~
2 mA, 10 10
Photo-
. TIL187-3, TlL188-3 IB ~ 0 20 20
On-state transistor mA
. TlL187-4, TIL188-4 30 30
Ie (on) collector operation
VCE ~ 1 V, IF ~
10 mA,
current 50 50
IB ~ 0
VCB ~ 1 V, IF ~ 10 mA,
II
Photodiode operation 12 ~A
IE ~ 0
Off-state VCE ~ 10 V, IF ~ 0,
IC(off) 100 100 nA
collector current IB ~ 0
Transistor static
VCE ~ 1 V, IC ~
10 mA,
...o
(IJ
hFE forward current
transfer ratio
Input diode static
IF ~ 0
25000
...
CO
VFt
forward voltage
IF ~ 10 mA 1 1.2 1 .5 1 1.2 1.5 V
"0
VCE(sal) t
Collector-emitter
saturation voltage
Input-ta-output
IC
IB
~
~
50 mA, IF
0
Vin-out = ±500 V,
~ 10 mA,
0.87 1 0.87 1 V
-...
(IJ
( IJ
1011 1011 n
'10
internal resistance See Note 5 ~
Input-ta-output Vin-out = 0, f ~ 1 mHz, 0.
Cio 1 1.3 1 1 .3 pF :::I
capacitance See Note 5 o(.)
IC(on)l
IC(on)2
symmetry ratio (see Note 6)
VCE ~ 1 V, IF ~
2 mA 1 3 1 3
...
o
0.
tThese parameters apply for either direction of the input current.
NOTES: 5, These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted o
together.
6. The higher of the two IC(on) values generated by the two diodes is taken as IC(on)l'

Till 87 TIL 188
t, Rise time VCC ~ 10 V, IC(on) ~ 10 mA, 100 100 ~s
If Fall time RL ~ 100 n, see Figure 1 100 100 ~s
INSTRUMENTS
TEXAS "'!1 3-187
TIL187·1 THRU TIL187·4
Adjust amplitude of input pulse is for IClon) = 10 mA
r-----,
:1 l ~
-=l=-r-i-:....-I--~""I4-
t: 470
..~-...-:----vvv- INPUT
I ~ f--"lL._ _ _ _--Ir
I
+ I I
I " - - ' " - - O U T P U T " " tr
- L __ - - _..J RL =100n : ~.,..,.,..--.."..".,~
OUTPUT I
E NOTES:
A. The input waveform is supplied by a generator with the following characteristics: Zo = 50 n, tr = :'5 15 n5 , duty cycle = 1 %.
..
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr S 12 n5 , Rl ~ 1 Ma, Cin S 20 pF.
0 FIGURE 1. SWITCHING TIMES
"'0
0
n
0 TYPICAL CHARACTERISTICS
c:
"S!.
...
CD
en
INPUT CURRENT
vs
COLLECTOR CURRENT
vs
INPUT VOLTAGE
Cii 100 200
.....
0
i»
0
80
60
TA = 25°C
180
160
-
en «
E
)
E
40
20
«
E
~
I 140
c:
! 120
! :;
:;
U 0
./ u
100
~-20
V (;
0
.! 80 IF = 3 mA
.E "0
~-40 u
I
60
!:}
-60 40
IS = 0
-80 20 TA = 25°C
IF = 1 rnA
-100 0
- 1.6 - 1.2 - 0.8 - 0.4 0 0.4 0.8 1.2 1.6 0 0.5 1.0 1.5 2.0 2.5
V-Input Voltage-V VCE-Collector-Emitter Voltage-V
FIGURE 2 FIGURE 3
Note 7: Pulse operation is required for operation beyond limits shown by the dashed line.
3-188 TEXAS . "

INSTRUMENlS
POST OFFICE BOX 655303 • DALlAS, TeXAS 75265
· TIL187·1 THRU TIL187·4
TIL188·1 THRU TlL188·4
COLLECTOR CURRENT NORMALIZED ON-STATE COLLECTOR CURRENT

vs vs
1000 1.2
VeE 1 V VCE = 1 V
IF
T10 mA
=
400 IB 0 IB = 0
C
TA - 25°C E 1.0
/ IF=~
« See Note B E
E 100 I
l E
~ 0.8
40
~
I:
'S
~"
/ u
U
,,0
10 B 0.6 f--, ~
B " ,« {"I/
"
.!! 4 '5" ,
'0 U
u 0.4 ,«
I / ""
.~
E <0
E 0.2
0.4 0
J 2:
0.1
0.1
/
0.4 4 10
'F-Forward Current-mA
40 100
o
-50 -25 o 25 50
75 100
&I
ti)
FIGURE 4
TIL1S7
FIGURE 5
TIL 1S7
...o...
CD
NORMALIZED TRANSISTOR STATIC NORMALIZED TRANSISTOR STATIC (5
w
u.
FORWARD CURRENT TRANSFER RATIO
COLLECTOR CURRENT
vs
J:
w
U.
FORWARD CURRENT TRANSFER RATIO
vs
-...
til
t il
J:
I 2.0 G)
o
I 2.0
VCE = 1 V ..,.,0 IC = 10 mA
C.
1.8 I-VCE = 1V
~ 1.8 IF - 0 a: ,/ ::l
Normalized to IC = 10 mA
.!!.. 1.6
'F = 0 o(,)
~
I:
~1.4
1.6 See Note 8
., I:
.:: 1.4
/ ...c.o
E E 1.2
/ o
~
~ 1.2
'S
u 1.0
/ 'S
u 1.0 /
"~ 0.8 "iii
s: 0.8
./
o ,,/' \ 0
u. 0.6 ./
u. 0.6
.5< ..,.," ./
V
0.4
~ 0.4 cii ,./
,/ \ ] 0.2
] 0.2
<0
<0 E 0
E
o
0
0.1 0.4 1 4 10 40 100 4001000
o -50 -25 o 25 50 75 100
2:
2:
Ie-Collector Current-mA T A - Free-Air Temperature- °c
FIGURE 6 FIGURE 7
NOTE 8: These parameters were measured using pulse techniques tw == 1 ms, duty cycle :s 2%.
TEXAS • 3-189
INSTRUMENTS
TIL187·1 THRU TIL187·4
TIL 187
NORMALIZED ON·ST A TE COLLECTOR CURRENT NORMALIZED COLLECTOR-EMITTER
(PHOTODIODE OPERATION) BREAKDOWN VOLTAGE
vs ow vs
U
~
1.6 ID 1.3
Ves e 1 V >I le=1mA
c IF ~ 10 rnA "~ IS = 0
c3 1.4 IS = 0 -
1S
1.2 IF e 0
"i
E
I!! 1.2 '" ~
>
c:
~ 1.1
~~
-------..
o
~
U ....
"0
,.....
j 1.0
i!! 1.0
ID
;3
] 0.8
~, ]
~
:::
0.9
N
~(; '" §
Eo
"C
r+
o
z
0.6
0.4
-50 -25 o 25
T A - Free-Air Temperature -
50
°e
""
75 100
"
..!! 0.8
"0
u
"0
z
"
.~
"iii
E
o
0.7
-50 -25 o 25
TA-Free-Air Temperature-
50
°e
75 100
(')
o FIGURE 8 FIGURE 9
I:
"C OFF-ST ATE COLLECTOR CURRENT
CD
..... vs
en FREE-AIR TEMPERATURE
1000
en « IS 0
o ""I IF ~ 0
iii E 100
r+ ~
o
.....
::J
U
-
en (;
t;
..!!
10
~o
~
./
"0
u ;~~=
I~
~v ; ,,0
*
o
15
0.1 ~v<v
I / /
~ 0.01
U / 1/
-0.001
o 25 50 75 100
TA-Free-Air Temperature- °e
FIGURE 10
3-190
TEXAS •
INSTRUMENTS
TIL190·1 THRU TIL 190·4
02987, JANUARY 1987-REVISEO JULY 1989
• High Direct-Current Transfer Ratios, 500% • Gallium Arsenide Diode Infrared Source
Minimum at IF = 10 mA and Up to 1500% Optically Coupled to a Silicon N-P-N Darlington
at IF = 2 mA with Choice of Four Phototransistor
Categories
• No Base Lead Connection on TIL 190 for High-
• Plastic Dual-In-line Package EMI Environment
• High-Voltage Electrical Isolation, 3.535 kV • UL Recognized - File # E65085

Peak (2.5 kV rms)
description
The TIL 189 and TIL 190 Optocouplers are designed for use in applications that require high current transfer
ratio and high voltage isolation between the input and output. The TIL 189 has the base connected for
applications where a base signal or resistor is required. The TIL 190 is designed with no internal base
connection for applications where high base-noise immunity is desired. Users can select from four different
current gains (TIL 189-1 through TIL 189-4 and TIL 190-1 through TIL 190-4).
mechanical data
9,40 (O'3701~
8,38 (0.330)
®®0
INDEX DOT
(SeeNoteBI~
~ ...otn
...
CtI
6.61 (0.260)
6,09 (0.2401 CD CD CD (See Note C)
'0
tn
5,46 (0.215)
292 (0 115)
~" _ _. . i_ _ ---.L_'--I~, 1.7861~~g~sMAX ...tn

Q)
- SEATING PLANE ..
c..
:::l
1v
0,203 (0.008)
1,78 (0.070)
0,51 (0.020)
3,81 (0.150)
3,1710.125)
1,27 (0.050)
2.2910.0901
4 PLACES
2,54 to. laO) T.P.

lJ j L
--1 L,
--l t
01 100401
MIN
0,534 (O.02l)
0,381 10.015)
6 PLACES
o(.)
...oc.
o
(See Note AJ
NOTES: A. Leads are within 0,13 mm (O.005 inch) radius of true position (T.P.) with maximum material
1. Anode i Infrared-emitting diode
2. Cathode 5
!: ~~j~~:~rnal connection~
6. TIL 189: Base
TIL 190: No internal connection Tll189 Tll190

specifications par the terms of Texas Instruments TEXAS • 3-191
~:~~:~~i~a[::I~~e ~~~~ti:( :1~o::~::::t::'s~S not INSTRUMENTS
TIL 189-1 THRU TIL 189-4
TIL 190-1 THRU TIL 190-4

Input-to-output voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .. ± 3.535 kV peak or dc (± 2.5 kV rms)
Collector-base voltage (TIL 189) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 100 V
Emitter-base voltage (TIL 189) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 14 V
25 DC free-air temperature (see Note 2) .................................... 100 mA
Infrared-emitting diode (see Note 3) ...................................... , 150 mW
Phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 150 mW
Total. infrared-emitting diode plus phototransistor (see Note 4) .................. 250 mW
Storage temperature range ......................................... - 55 DC to 1 50 DC
Lead temperature 1.6 mm (1I16-inch) from case for 10 seconds. . . . . . . . . . . . . . . . . . . . .. 260 DC
NOTES: 1. This value applies when the base~emitter diode is open circuited.
2. Derate linearly to 100°C free·air temperature at ihe rate of 1.33 mA/oC
E
3: Derate linearly to 10QoC free-air temperature at the rate of 2 mW/oC.
4. Derate linearly to 10Qoe free-air temperature at the rate of 3.33 mW/oC.
o
,..
"0
o
(')
o
C
"0
CD
...
VI
-0"
o
ii)
,..
o
...
-
VI
3-192 TEXAS •
INSTRUMENTS

TIL189 TIL 190
Collector-base IC = 10 ~A, IE = 0,
VISRICSO 100 V
breakdown voltage IF =0
Collector-emitter IC = 1 rnA, IS = 0,
VISRICEO 55 55 V
breakdown voltage IF = 0
Emitter-base IE = 10 ~A, IC = 0,
V(SRIESO 14 V
breakdown voltage IF = 0
Emitter-collector
V(SRIECO IE = 100 ~A, IF = 0 7 V
breakdown voltage
Input diode static
IR VR = 3 V 10 10 ~A
reverse current
TIL189-1, TlL190-1 5 5
TIL 189-2, TIL190-2 VCE = 1 V, IF=2mA, 10 10
Photo-
. TIL189-3, TIL190-3 IS = 0 20 20
On-state rnA
IC(onl collector
:::::i~~ TIL 189-4, TIL 190-4 30 30
VCE = 1 V, IF = 10 rnA,
II
current 50 50
IS =0
VCS - 1 V, IF - lOrnA,
Photodiode operation 5 15 ~A
IC(offl
Off-state
IE = 0
VCE = 10 V, IF = 0,
1 100 1 100 nA - ...o
U)
hFE
collector current
Transistor static
forward current
IS = 0
VCE = 1 V, IC = 10 rnA
25000
...
l!:!
transfer ratio
IF = 0 o
-...
U)
Input diode static
VF IF=10mA 1.2 1.5 1.2 1.5 V
forward voltage
U)
Collector-emitter IC - 50 rnA, IF = 10 rnA,
VCE(satl 0.87 1 0.87 1 V Q)
saturation voltage IS =0
Q.
Input-ta-output Vin-out = ±500 V,
1011 1011 0 :::s
'10 internal resistance See Note 5 o
(J
Input-ta-output Vin-out - 0, f - 1 mHz,
Gio
capacitance See Note 5
1 1.3 1 1.3 pF
...
o
C-
O
TIL 189 TIL 190
tr Rise time VCC = 10 V, IC(onl = 10 rnA, 100 100 ~s
tf Fall time RL = 1000, see Figure 1 100 100 ~s
TEXAS . " 3-193

INSTRUMENTS
TIL 189·1 .THRU TIL 189·4

IClon) = 10 rnA
r-----,
I 14 I 47 {l
*r--';--411"",,1---~'VII'r- INPUT INPUT
0..J L
++
'--~-OUTPUT
RL = 100 (l
TEST CIRCUIT = VOLTAGE WAVEFORMS
•
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Zo = 50 il, tr = S 15 ns, duty cycle = 1 % .
B. The output waveform is monitored on an oscilloscope with the following characteristics: t r :5 12 n5, R1 ~ 1 MO, Cin :5 20 pF.
0
'0 TYPICAL CHARACTERISTICS
r+
0 FORWARD CURRENT COLLECTOR CURRENT
n
0 vs vs
I: FORWARD VOLTAGE COLLECTOR-EMITTER VOLTAGE
'0
160 200
...
CD
en 140 I 180
IF'" 16 rnA
~ / /V
rZ~ ......-: 6"~ I---""
IF SmA
\ w?'"
en
0 ~ 120
I
I <t
E
160 _~F
IF =
""
ISmA rnA
/ / If ; . .""'~
; . - f----
IJ /
140
C) I ~c:
r+ E 100 !! 120 X IF"" 4 rnA
...
0 l2
!i
TA = 25°C
f'U / !i See N~te 6 (~
-
Maximum
en u 80 u 100 ~wer Oissipation_
.
"E
~ 60
1/ J
<;
0 80
~
..... IF = 3 rnA
~
"6
'/
0
LL TA ~ 70·C u 60 '" ~
I I IF - 2 rnA
o!:!- 40 !:J 40 18 = 0
20
/ ITA ~ -55°C
20
TA = 25°C J
WJ 'F 1 rnA
o o ~
o 0.2 0.40.6 0.8 1.0 1.2 1.4 1.61.82.0 o 0.5 1.0 1.5 2.0 2.5
VF-Forward Voltage-V VCE - Collector-Emitter Voltage - V
FIGURE 2 FIGURE 3
NOTE 6: Pulse operation is required for operation beyond limits shown by the dashed line.
TEXAS . "
3-194 INSTRUMENTS
COLLECTOR CURRENT RELATIVE ON-STATE COLLECTOR CURRENT
vs vs
~
1000 III 1.2
VCE 1 V
N VCE = 1 V I
i IF = 10 rnA
400 18 - 0 18 - 0
~ 1.0
IF=2~
TA = 25°C
<C
E
I
100 See Note 7
"
~ 0.8
.l
IF = 10 m~ ~
~
40
E >
1!! /
B
:; /
U 10 ..,~ 0.6
is
ti
.!!
4 '"
iii
a: /~ = 2mA
"0 E 0.4
u
I 1!!
9 :;
u 0.2
0.4
0.1
0.1
/
0.4 4 10 40 100
ECJ
.!!
'0
u
0
-50 -25 o 25 50 75 100
II
-
IF-Forward Current-rnA TA-Free-Air Temperature- °c ...o
f /)
~
FIGURE 4 FIGURE 5
~
TIL189
of/)
-...
TIL189
NORMALIZED TRANSISTOR STATIC NORMALIZED TRANSISTOR STATIC
FORWARD CURRENT TRANSFER RATIO FORWARD CURRENT TRANSFER RATIO f /)
vs vs CI)
w w
u..
.r.
I 2.0
COLLECTOR CURRENT
.r.
u..
I 2.0
c..
:J
o VCE = 1 V ..,0 IC = 10 rnA
o
~ 1.8 IF = 0 1.8 r-VCE = 1V (.)
Normalized to IC = 10 rnA
a: '" IF = 0 /' o
~ 1.6 See Note 7 of!on 1.6 ~
c
~ 1.4 ~
c
'"1.4
/ O
C-
~ 1.2
~
c 1.2 /
:; / "~ /
u 1.0 u 1.0
"E
~ 0.8
"E
'~" 0.8
/
is
u.. 0.6
./' \ is
u.. 0.6
./
CJ CJ /'
~ 0.4 '!rn 0.4 ./
./ \ ,,/
".~ 0.2 ".~ 0.2
iii iii
E 0 E 0
is 0.1 0.4 1 4 10 40 100 4001000 is -50 -25 o 25 50 75 100
Z Z
Ic-Collector Current-rnA TA-Free-Air Temperature- °C
FIGURE 6 FIGURE 7
NOTE 7: These parameters were measured using pulse techniques tw = 1 ms, duty cycle:::; 2%.
TEXAS . .
3-195
INSTRUMENTS
TIL 190·1 THRU T1L190·4
TIL189
RELATIVE ON·STATE COLLECTOR CURRENT RELATIVE COLLECTOR-EMITTER
(PHOTODIODE OPERATION) BREAKDOWN VOLTAGE
vs vs
FREE·AIR TEMPERATURE FREE-AIR TEMPERATURE
~ 1.3
1.6
~ le=1mA
~ IS = 0
1.4 i 1.2 IF = 0
~
~ o
~ "
'"
-"
=
() 1.2 ~ 1.1
'~
al
.,
~
~
~
'6 1.0
()
I~
.~
w
.:..
1.0
- t-- ~
"
~ 0.8
E
~ 0.9
E
o
~ '0
()
""
ves - 1 V
Z
0.6 I-IF = 10 mA ..... ".~ 0.8
"iii
IS = 0
E
o 0.4 I ~ 0.7
'C
.-+ -50 -25 o 25 50 75 100 -50 -25 o 25 50 75 100
o TA-Free-Air Temperature- °e TA-Free·Air Temperature- °e
(")
o FIGURE 8 FIGURE 9
!:
'C
OFF-STATE COLLECTOR CURRENT
~
...
en
vs
1000
en « IS 0
o "-
a; I
E 100
IF = 0
.-+ ~
...
o
()
:;
./
~ o 10
~
ti
'~4
oS!
'0 =
()
~,
o.
4' ,,0
~
0.1 ~v<v
5I / 7
:= 0.01
o
U I
-0.001
o 25 50 75 100
T A - Free-Air Temperature - °e
FIGURE 10
3-196 TEXAS ~
INSTRUMENTS
TlLt9t. TILt92. TILt93. TIL19tA. TlLt92A. TIL193A
TIL t 9t B. TILt 92B. TlL193B
OPTOCOUPLERS
03263. APRIL 1989-REVISED SEPTEMBER 1989
• Gallium Arsenide Diode Infrared Source • High-Voltage Electrical Isolation 3.535 kV

Peak 12.S kV rms)
• Source Is Optically Coupled to Silicon N-P-N
Phototransistor • Plastic Dual-In-Line Packages
• Choice of One. Two. or Four Channels • UL Listed - File #E6S085
• Choice of Three Current-Transfer Ratios
description
These optocouplers consist of a gallium-arsenide light-emitting diode and a silicon n-p-n phototransistor
per channel. The TIL 191 has one channel in a 4-pin package. the TIL 192 has two channels in an 8-pin
package. and the TIL 193 has four channels in a 16-pin package. The standard devices. TIL 191. TIL 192.
and TIL 193. are tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer
ratio of SO% and 100% minimum are designated with the suffix A and B respectively.
mechanical data
D 4.80 (0.1891
III
4.19 (0.1651
~
TIL19l
PIN 1
GJ
.
I ,1 '0-.2 - -
(0.4011
-...
III
0
+'
9,2 (0.362)
~
TIL192 0
D -...
III
1o-_ _ _-t!-7.62
Io---*!-
(0.300) T.P.
(see Note AI
~.76 (0.266!
6.25 (0.246)
PIN 1
• ~
III
C.
::::l
0
0
0
+'
0
C.
3.81 (0.1501
I i:,".·'~ f
5.84 10.230} MAX .".""~
ML
- - , SEATING PLANE
,
~ L ) .27 (0.050)
r- 1.12 (0.044)
3.81 10.150}
2.54 10. lOa}
U-, -<II<- 0.58 (0.023'
0.43 (O.017)
2,7910."0)
2,29 (D.090)
NOTE A: Each pin centerline is located within 0.25 (0.010) of its true longitudinal position.
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES.
specifications per the terms of Texas Instruments TEXAS. 3-197
~:~~:~~i~Bt::1~1e ~!::i:~ti:i :1~O~:~::::t~;s~S not INSTRUMENTS
TlL191. TIL192. TIL193. TIL191A. TIL192A. TIL193A
TlL191B. TlL192B. TIL193B
OPTOCOUPLERS
schematic diagrams
TIL 191 TIL192 TIL193
8 1C 1A
1
1K 2 15 1E
71E
2A3 14 2C
6 2C
2K 4 13 2E
2E
5 3A 5 12 3C
3K 6 11
3E
4A 7 104C
4K 8 9 4E
•
absolute maximum ratings at 25 DC free-air temperature (unless otherwise noted)
Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . .. ± 3.535 kV peak or dc (± 2.5 kV rms)
Collector-emitfer voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 35 V
o
"'C
r+ Input diode continuous forward current at (or below) 25°C free-air temperature
o (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
C') Continuous power dissipation at (or below) 25°C free-air temperature:
o Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1 50 mW
s::::
"'C Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . .. 200 mW
~
...
III
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds. . . . . . . . . . . . . . . . . . . . .. 260°C
NOTES: 1. This rating applies for sine-wave operation at 50 or 60 Hz. Service capability is verified by testing in accordance with UL
III requirements.
S?- 2. This value applies when the base-emitter diode is open circuited.
Ol 3. Derate linearly to 10QoC free-air temperature at the rate of 0.67 mA/oC.
r+
...o 4. Derate linearly to 10QoC free-air temperature at the rate of 2 mW/oC.
-
5. Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/oC .
III
V(BR}CEO Collector-emitter breakdown voltage IC = 0.5 mA IF = 0 35 V
V(BR}ECO Emitter-collector breakdown voltage IC = 100 ",A. IF = 0 7 V
IR Input diode static reverse current VR = 5 V 10 ",A
IClolIL Off-state collector current VCE = 24 V. IF = 0 100 nA
Current I TILl91, TIL192, TIL193 20%
CTR transfer
ratio
I TIL191A, TIL192A, TILl93A IF = 5 mAo VCE = 5 V 50%
I Till 91 B. TILl 92B. TILl 93B 100%
VF Input diode static forward voltage IF = 20 mA 1.4 V
VCE(s.t} Collector-emitter saturation voltage IF = 5 mA, IC = 1 mA 0.4 V
Vin-out = 0,
Cio Input-ta-output capacitance 1 pF
1= 1 MHz, See Note 6
Yin-out = ± 1 kV,
qo Input-ta-output internal resistance 10 11 !l
See Note 6
NOTE 6: These parameters are measured between all input-diode leads shorted together and all phototransistor leads shorted together.
3-198 TEXAS •
INSTRUMENTS
TIL191. TlL192. TlL193. TIL191A. TIL192A. TlL193A
TIL191 B. TIL 192B. TIL 193B
OPTOCOUPLERS

PARAMETER TEST CONDITIONS TVP UNIT
Vee ~ 5 V,
tr Rise time 6 ~s
Ie (on) ~ 2 mA,
RL ~ 100 0,
tt Fall time 6 ~s
See Figure 1
470 INPUT
~~~~~__~__~~_____ INPUT
(See Note A) o~ L
r--+__~_______ OUTPUT
(See Note B)
+
RL = 1000
J-- OUTPUT
90% 90%
Vec - 5 V
TEST CIRCUIT
Adjust amplitude of input
pulse for IC(on) - 2 rnA
II
-...
I II
VOLTAGE WAVEFORMS
NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZOUT = 50 n, tr !5;; 15 nSf tw = 100 P.5,
...
o
..!!:!
duty cycle ~ 1 %. o
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr ~ 12 nSf Rin 2 1 MU, Cin .$ 20 pF.
FIGURE 1, SWITCHING TIMES -...

III
III
..!!!
a.
::::I
o
(.)
...a.
o
o
TEXAS . . 3-199
INSTRUMENTS
POST OFFtCE BOX 655303 • DALLAS. TEXAS 75265
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL 1918, TIL 1928, TIL 1938
OPTOCOUPLERS
TIL 191. TIL 192. TIL 193
FORWARD CURRENT COLLECTOR CURRENT
vs vs
FORWARD VOLTAGE COLLECTOR-EMITTER VOLTAGE
160
140 I
16
18 - 0
14 I- TA - 25°C
(',---
IF - 12 mA
IIF ~ 10lmA
-
~ 120
I
C 100 I 1/r- II
IF-SmA I--
§
U
SO
TA = 25°C
rN I I I
~
~ 60
r II I .1
IF - 5mA I--
TA - 70°C
'I
•
~ 40 I I
I
20
/ TA = -55°C
2
II
IF-2mA r--
o o
o
l! / o I I
'tJ
0.20.40.6 O.S 1.0 1.2 1.4 1.6 1.S 2.0 o 1 2 3 4 5 6 7 S 9 10
r+
o(") VF-Forward Voltage-V VCE-Collector-Emitter Voltage-V
o
c:
FIGURE 2 FIGURE 3
.
'tJ
Ci'
en
NORMALIZED ON-STATE COLLECTOR CURRENT

vs
u
vs
~ 1.2
N
I 1.1 .",-- ---.... I
VCE - 5 V
IF-5mA-
~
Ii 1.0
'" 18 - 0
'"
!
~ 0.9
S
.g O.S I\.
.!!
d! 0.7
'\
~
C
0.6
1\
\
0.001 .....1'--'--'-...w....u..u.'---'-..L...L,.i..J..J.I..U---'.-..J.....J.,.J...1.J.1.U
1 0 .5
0.1 0.4 4 10 40 100 c3 0'":50 -25 o 25 50 75 100
IF-Input Current-rnA TA-Frae·Alr Tamperetura- °C

FIGURE 4 FIGURE 5
3-200 TEXAS .."

INSTRUMENTS
POST OFFICE BOX 865303 ~ DALLAS, TEXAS 75205
TIL 191. TIL 192. TIL 193. TIL 191 A. TIL 192A. TIL 193A
TIL191B. TIL192B. TlL193B
OPTOCOUPLERS
TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
vs
~ 0.24
. I I
.ll!'"
-]; 0.20
c
r-:~: ~:~
.~
~ 0.16
/
CD
en
/'"
V
Ii 0.12
V V
.~
w
§ 0.08 .........-
o"
.!!
y 0.04
.
~
CD
8" 0
> -50 -25 o 25 50 75 100 ...o
CI)
+J
TA-Free-Air Temperature- °C CO
FIGURE 6 '0
TYPICAL APPLICATION DATA

-...
.!!.!
CI)
IV
5V-------, . - - - - - - - Vee - 5 V
c..
::s
o(.)
y ) - - - - OUTPUT o
+J
C.
o
SN7404
INPUT
FIGURE 7
TEXAS • 3-201
INSTRUMENTS
•
o
'0
~
o
(')
o
I:
'0
en
...
en
3-202
TIL 194. TIL 195. TIL 196. TIL 194A. TIL 195A. TIL 196A
TIL 1948. TIL 1958. TIL 1968
D3287. MAY '989- REVISED SEPTEMBER '989
• AC Signal Input • Choice of Three Current-Transfer Ratios

• Gallium-Arsenide Diode Infrared Source • High-Voltage Electrical Isolation 3.535 kV
Peak 12.5 kV rms)
• Source Is Optically Coupled to Silicon N-P-N
Phototransistor • Plastic Dual-In-Line Packages
• Choice of One. Two. or Four Channels • UL Listed - File IE65085
description
These optocouplers consist of two gallium-arsenide light-emitting diodes connected in a reverse-parallel
configuration for ac-input applications and a silicon n-p-n phototransistor per channel. The TIL 194 has
one channel in a 4-pin package, the TIL 195 has two channels in an a-pin package, and the TIL 196 has
four channels in a 16-pin package. The standard devices, TIL 194, TIL 195, and TIL 196, are tested for a
current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and 100%
minimum are designated with the suffix A and a respectively.
mechanical data
4.80 (D.la9)
D4~i6';)
&I
~
TIL194
PIN 1
~ Vl
~
....
0
CO
"0
~
-Vl
Vl
~
~
Q.
:::J
0
U
....C-
0
If---~- 6,7610.266)
6,25 (0.246)
1
3.8110.150)
3.3010.1301
- - SEATING PLANE
f
5,84 (0.230) MAX
0.51 (0.1251
~
ML
...:iIL.--,.--...-_
f T
mmw L
r-
'c3.?.!!' 0501
1,12 (0.0441
O
3.8' 10 '50) I I -o! I-- ,,-~--,~.023)

2,54(0.100) ~ 0,4310017)
2.29 10.090\
NOTE A: Each pin centerline is iocated within 0,25 (0.010) of its true longitudinal position.
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES.
PRODUCTION DATA documants ..ntain inlormatio. Copyright © 1989, Texas Instruments Incorporated
specifications per the tarms of Texas Instruments TEXAS . " 3-203
:'~-=~ri~8ir::I~'i ~:~:~ti:.n :.~o:=::.:~~ not INSTRUMENTS
TIL194, TlL195, TIL196, TIL194A, TIL195A, TIL196A
TIL 1948, TIL 1958, TIL 1968
schematic diagrams
TIL194 TIL195 TIL196
(TOP VIEW) ITOP VIEW) ITOP VIEW)
16 1C
1 AIK 8 lC 1 AIK
1 KIA 2 7 lE 1 KIA 2 15 1E
2 AIK 3 6 2C 2 AIK 3 14 2C
13 2E
2 KIA 2E 2 KIA 4
5
4 3A/K "5 12 3C
3 KIA 6 113E
4 AIK 7 10 4C
9 4E
4 KIA 8

Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . .. ± 3.535 kV peak or dc (± 2.5 kV rms)
Input diode continuous forward current at (or below) 25°C free-air temperature
(see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
o
"C
r+ Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 150 mW
o Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . .. 200 mW
(')
o Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds. . . . . . . . . . . . . . . . . . . . .. 260°C
C
"C
NOTES: 1. This rating applies for sine-wave operation at 50 or 60 Hz. Service capability is verified by testing in accordance with UL
..,CD requirements .
til 2. This value applies when the base-emitter diode is open circuited.
3. Derate linearly to 10QoC free-air temperature at the rate of 0.67 mA/oC.
Ui 4. Derate linearly to 10QoC free-air temperature at the rate of 2 mw/oe.
o 5. Derate linearly to 10QoC free-air temperature at the rate of 2.67 mW/oC.
Qj
r+ electrical characteristics at 25°C free-air temperature (unless otherwise noted)
o
..,
-
til
V(BR)CEO
V(BR)ECO
PARAMETER
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
TEST CONDITIONS
IC - 0.5 mA
IC = 100 pA,
IF - 0
IF =0
MIN
35
7
TYP MAX UNIT
V
V
ICloff) Off-state collector current VCE = 24 V, IF =0 100 nA
Current I TIL194, TlL195, TIL 196 20%
CTRt transfer
ratio
I TIL 194A, TIL195A, TIL 196A IF = 5 mA, VCE = 5 V 50%
I TIL 194B, TIL 195B, TIL 1 96B 100%
VFt Input diode static forward voltage IF = 20 mA 1.4 V
VCE(sat) t Collector-emitter saturation voltage IF = 5 mA, IC = 1 mA 0.4 V
Vin-out - 0, f - 1 MHz,
Cio Input-to-output capacitance 1 pF
See Note 6
Yin-out = ± 1 kV,
rjo Input-to-output internal resistance 10 11 II
See Note 6
IClon)1 On-state collector current symmetry ratio
Isee Note 7)
VCE = 5 V, IF = 5 mA 1 3
IClon)2
tThese parameters apply to either direction 9f the input current.

NOTES 6: These parameters are measured between all input-diode leads shorted together and all phototransistor leads shorted together.
7. The higher of the two values of IClon) generated by the two diodes is taken as IClon)l .
3-204 TEXAS . "

INSTRUMENTS
TIL194B. TlL195B. TIL196B
switching characteristics at 25 DC free-air temperature

PARAMETER TEST CONDITIONS TYP
f--'tr+l_-::R..,is-,-e.,.ti_m_e_ _ _ _ _ _ _ _ _ _ _ _ _ _ _--I VCC = 5 V, IClon) = 2 rnA, f-_ _ _-:6_ _ _t--'---(
tf 1 Fall time RL = 100 n, See Figure 1 6
tThese parameters apply to either direction of the input current.

Adjust amplitude of input pulse for IClon) - 2 rnA
INPUT
IN:;U.:J
Y r---,L..____..."r
(See Note Al
OUTPUT
(See Note B) "
90% 90% 90% 90%
-=- VCC - 5 V
RL = 100 U
TEST CIRCUIT
0
VOLTAGE WAVEFORMS
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Zo "'" 50 H, tr .$ 15 ns, duty cycle = 1 %.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr ~ 12 ns, Ri ~ 1 MO. Cj :S 20 pF.
II
...
(I)

o
.....
CO
TYPICAL CHARACTERISTICS "0
INPUT CURRENT
vs
-...
~
( I)
INPUT VOLTAGE ~
100 C.
TA = 25°C ::::I
80 - - t--- o
(,)
60 - ..-
.....o
« -- L c.
E
I
40
o
~
20
"
~
:; ./
0
u
5c. -20
f
.E
I -40 I -_.- - - r-
.!!-
-60
r
-80
-100
-1.6-1.2-0.8-0.4 00.4 0.81.21.6
VF-Input Voltage-V
FIGURE 2
TEXAS ~ 3-205
INSTRUMENTS
TIL 1948. TIL 1958. TIL 1968
TIL 194. TIL 195. TIL 196
COLLECTOR CURRENT NORMALIZED ON-STATE COLLECTOR CURRENT
vs vs
COLLECTOR·EMITTER VOLTAGE INPUT-DIODE FORWARD CURRENT
16 100
-
-
18 - 0 IF - 12 mA
tVCE - 5 V
14 f- TA - 25°C c I- Normalized to IF ~ 5 mA
I 1 I
~ 12
/-- IF ~ 10 mA
U
~
"
10 ETA - 25°C
I
C 10
Ii-I--- I l
IF-8mA f--
~.!!
!
:; 8
U
g
u
.!!
"0
8
6
.f- . f--~
FI·i
-f--- IF-5mA f---
"t:I
.~
~
o
0.1
1/
u
I
J?
4
2
#-- f-I-~
I
~
_. 1--
--i I
I
IF - 2 mA I---
z
I
"C0.01
o
JJ
o I I 0.001 7
o
"C
o 2 3 4 5 6 7 8 9 10 0.1 0.4 4 10 40 100
r+ VCE-Coliector·Emitter Voltage-V IF-Input Current-mA
o
(')
FIGURE 3 FIGURE 4
o
c:::
"C RELATIVE ON-STATE COLLECTOR CURRENT TYPICAL COLLECTOR-EMITTER
CD
... vs SATURATION VOLTAGE
en FREE-AIR TEMPERATURE vs
u FREE-AIR TEMPERATURE
en °~ 1.2 ~ 0.24
o I & I.
~ t---.. I I
u
Dr
r+ < 1.1 VCE - 5 V_ f!
~ 0.20 I---IF - 5 mA
~
IF-5mA
...
o I-
~
18 - 0 Ic-1mA
-
en : 1.0 .g"
/
'"
"
iii ~ 0.16
>
S
0.9
~ V
.~ I\. ! ./
.c:. 0.8
0.7 \ .~
w
§ 0.08
0.12
V V
"~
c3 0.6
f\ :8 -----
~
o '\ I 0.04
1j 0.5
.!!
"0
...
~
u 0.4 ~ 0
I -50 -25 o 25 50 75 100 > -50 -25 o 25 50 75 100
J?
TA - Free-Air Temperature- °C T A - Free-Air Temparatura- °C
FIGURE 5 FIGURE 6
3-206 TEXAS •
INSTRUMENTS
TIL3009 THRU TlL3012
03064, DECEMBER 19B7
• 250-V Phototriac Driver Output • High Isolation ... 3535 V Peak

• Gallium Arsenide Diode Infrared Source and • Output Driver Designed for 115 V AC
• Standard 6-Pin Plastic DIP
(Bilateral Switch)
mechanical
8.38 10'370)~~~
9.40 10.330)
®®0
~
t .
;- -~
6.61 10.260)
6.09 10.240)
INDEX DOT
ISee Note
5.46 10.215)
B)~
mJ
G 0 CD ISee Note C)
...o
til
+'"
CO
'0
2.92 10.115) 1. 7B61~Lo;g~sMAX
-...
.!E
~
t il
M05 :l i
Q)
c..
'-W JL ...J L
0 - ""'" "."
90° 0.30510.012)
1.7810.070)
0.51 10.020) 1 r- 1.01 10.040)
MIN ::::J
o
-o\~0.203 10.00B) ~ 2.2910.090)
o
CJ
\ 3.8110.150) 1.2710050) +'"
3.1710.125) 4PLACES 0.53410.021) C.
2.5410 100) T P
0.381 10.015)
6 PLACES
o
(See Note A)
FALLS WITHIN JEDEC MO·OOI AM DIMENSIONS
NOTES: A. Leads are within 0,13 mm (0005 inch) radius of true position (T.P.l with maximum material
condition and unit Installed.
1. Anode } Infrared emitting
2. Cathode diode
4. Main terminal
5. Triac Substrate
} Phototriac
100 NOT connectl
6. Main terminal
specifications per the terms of Texas Instruments TEXAS . " 3-207
:~:~:~~i~at::I~~~ ~!::j~~ti:r :llo::~::t:~~s not INSTRUMENTS
TIL3009 THRU TIL3012

Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) ............. 3.535 kV
Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 mA
TA= 25°C ........................................................ 100 mA
TA=70oC ......................................................... 50mA
(t w = 10 ms, duty cycle = 10%, see Figure 7) ................................. 1.2 A
Operating junction temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 40°C to 100°C
11
NOTES: 1. Input-ta-output peak voltage is the internal device dielectric breakdown rating.
o
'C electrical characteristics at 25°C free-air temperature (unless otherwise noted)
r+
n =3V
o IR Static. reverse current VR 0.05 100 ~A
!: VF Static forward voltage IF = 10 rnA 1.2 1.5 V
'C IDRM Repetitive off-state current, either direction VDRM = 250 V, See Note 5 10 100 nA
(i'
...
C/I
dv/dt
dv/dt(cl
Critical rate of rise of off-state voltage
Critical rate of rise of commutating voltage
See Figure 1
10 = 15 rnA, See Figure 1
12
0.15
V/~s
V/~
TIL3009 15 30
C/I Input trigger current, TIL3010 8 15
o 1FT Output supply voltage =3 V rnA
either direction TIL3011 5 10
Q) TIL3012 5
r+
o... VTM Peak on-state voltage, either direction ITM = 100 rnA 1.8 3 V
C/I IH Holding current, either direction 100 ~A
NOTE 5: Test voltage must be applied within dv/dt rating.
3-208
TEXAS . "
INSTRUMENTS
Vee
--+ Vin .. 30 V rms

--+
121
10 k!1
INPUT
(See Note 61
II
dV/dt ~ 2 y'2"fVin
The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and increasing
...
C/)
o
frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then +'"
be used to calculate the dv/dt(c) according to the formula shown above. CO
(5
FIGURE 1. CRITICAL RATE OF RISE TEST CIRCUIT C/)
--------------------------------------------------...
TYPICAL CHARACTERISTICS C/)
EMITTING DIODE NORMALIZED TRIGGER CURRENT ~

vs Co
FREE-AIR TEMPERATURE ON-STATE CHARACTERISTICS
::::I
1.4
o
800 (.)
I I I
« «
E
600
Output tw = 80 /lS
IF =20 rnA
V
/ o
+'"
c..
E 1.3
I I f = 60 Hz
I o
E E 400 TA = 25°C
~ 1.2 ~
:; /
"
II
~ 1.1 1\ .,
II
10
U;
200
0 /
" V
Cl
~ C:
I'-.... a -200
] 1.0
iii
E
-'"
.,
co
D.. -400
V
/
I
00.9 :2 j
2: 1:" -600
0.&
- 50 -25 o 25 7550 100
/ 4 -2 o 2 4 6
TA-Free·Air Ternperature- °C VTM - Peak On-State Voltage - V
FIGURE 2 FIGURE 3
TEXAS . " 3-209

INSTRUMENTS
CRITICAL RATE OF RISE OF OUTPUT VOLTAGE

vs
LOAD RESISTANCE
14 0.24
TAl = hoc
See Figure 1
OFF-STATE
12 0.20 'Q.
VI
~ ;;
;; I
.;
l 10
- 0.16 ">
-
"tl
"tl
">
"tl
1.0-- en
\~G
~
~",i _ "
.;;
lIS
U;
8 O~~U...
C ,.
0.12 ;
.... E
a ;
E
o
6 0.08 (.)
--dv/dt
,-rv/d:'C)
4 0.04
o o 0.4 0.8 1.2 1.6 2
....o
"C RL -Load Resistance-kfl
n FIGURE 4
o
I: CRITICAL RATE OF RISE OF OUTPUT VOLTAGE
"2- vs
...
CD
(fl
12 r - - - - - , - - · - - - - r - - - - - , 0 . 2 4
_ _ _ dv/dt
iii _ _ _ dv/dt(c)
o 10
See Figure 1
0.20
Dr
....o
VI
~
VI
..::- ;;
...
(fl
>
...I
8 f----~:_+----+----___l 0.16 l
"tl
"tl ">
"> "tl
"tl 6 0.12 .g'
~
cii'" 4 f------'=--"'-+-::------''''''to'~:__-___l 0.08
~
E
:::0
--- §
(.)
2 f-------i-----+-----"='i 0.04
0 ~------~------~------~O
25 50 75 100
TA -Free-Air Temperature- °C
FIGURE 5
3-210
TEXAS •
INSTRUMENTS
.POST OFFICE BOX 665303. DALLAS, TEXAS 75265
RMS APPLIED VOLTAGE

(FOR dv/dt(c) = 0.15 V/p.s)
vs
FREQUENCY
1000
=RL 1 kO
400 =TA 25°C
> - See Figure 1
I
Q) ~V/dt = 2..f2·,rH/in
~'"
"0 100
>
"0
.!!! 40 --
C. -
c.
<t
CI)
:2: 10
~ ~, .
IE:
I
t: 4 -
-> - I~
~
1 ~"I"" II 11"1",, Iii I II~" Iii ...
I/)
100 400 1 k
f-Frequency of Applied Voltage-Hz
4 k 10k 40 k 1 00 k
...
o
ctI
FIGURE 6 (5
-...
I/)
MAXIMUM RATINGS I/)
Q)
vs C.
::::I
<t
E 3
PULSE DURATION o(.)
E
~
I 1""1'' 1 1111111111'' '1' ' 1 1
TA = 25°C
""/'' 1 1 ""/'' 1 1 ...o
C-
:; O
U
Q)
'iii
ci) 2
i:
0 ...... r-.
""a.'"
Q) ...... r-.
Q) ......
.~
.;:
Q)
c.
Q)
t:
o
z
I
~O ~llIkll I 1""I,,,il ""I", I1II i""I,, I
1:" 0.01 0.1 10 100
tw - Pulse Duration - ms
FIGURE 7
TEXAS • 3-211
INSTRUMENTS
TlL3009-TIL30 12
Rin 11) 16) 180 n

Vee
-
--JVV'v---+--,
120 V. 60 Hz
12)
Rin 11)
Vee
0
~
.-+
0
(')
0
c:
12)
-
~
CD
...
f/) IGT" 15 rnA
f/)
FIGURE 9. INDUCTIVE LOAD WITH SENSITIVE-GATE TRIAC
0
iii
.-+
...
0
-
f/)
Vee
Rin 11)
12)
- 120 V. 60 Hz
15 rnA < IGT < 50 rnA
3-212 TEXAS . "

INSTRUMENTS
03065. DECEMBER 1987
• 400- V Phototriac Driver Output • High Isolation ... 3535 V Peak

• Gallium Arsenide Diode Infrared Source and • Output Driver Designed for 220 V AC
• Standard 6-Pin Plastic DIP
(Bilateral Switch)
mechanical
9.40 (0'370)~
8.38 (0.330)
000
G. INDEX DOT
8)~
~ &I
-
14-_ _ _ _*""7 ,~~.~or:~~) ~.P.
- ~:~~ :g:~:g:
(See Note
(2) 0 0 (5 •• Note C)
.
(/')
...o
ffiJ
CO
5.46 (0.215)
'0
2.92 10.115)
1.7861~~g~SMAX
-.
~
( /')
~ CI)
lJ C.
- SEATING PLANE
II 0.30510.012j1 1.7810.070) T --.J L 1 •01 (0.040) ::::s
1~~0.203 ~5:1) 10.::0~ j L'

o
I CJ
10.0083\.81 10.
3.17 10.125)
(0.090)
1.27 (0.050)
4 PLACES
MIN
0.534 10.021)
...
o
c.
2.5410 100) T P
0.381 10.015)
6 PLACES
o
(See Note AJ
FALLS WITHIN JEDEC MO-OOI AM DIMENSIONS

NOTES: A. Leads are within 0,13 mm (0.005 inchl radius of true position (T,P.) with maximum material
1. Anode } Infrared-emitting
2. Calhode diode
4. Main terminal
5. Triac Substrate
} Phototriac
100 NOT connect)
6. Main terminal
PRODUCTION DATA documant. contain information Copyright © 1985, Texas Instruments Incorporated
specifications per the terms of Texas Instruments TEXAS .", 3-213
~~~~~:~~i~ai~:1~7~ ~!::~ti:r lI~o::~::::u:~: not INSTRUMENTS
TIL3020 THRU TlL3023
absolute maximum ratings at 25 °C free-air temperature (unless otherwise noted)

Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) . . . . . . . . . . . .. 3.535 kV
Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. 50 rnA
TA= 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 rnA
TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 rnA
(tw = 10 ms, duty cycle = 10%, see Figure 7) ................................. 1.2 A
Phototriac (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 300 mW
Operating junction temperature range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. -40°C to 100°C
•o
'S
o(")
o
r::::
NOTES:
IR
1.
2.
3.
4.
Input-to-output peak voltage is the internal device dielectric breakdown rating.
Derate linearly to 10QoC free-air temperature at the rate of 1.33 mW/oC.
Derate linearly to 10QoC free-air temperature at the rate of 4 mW/oC.
Derate linearly to 10QoC free-air temperature at the rate of 4.4 mW/oC.
electrical characteristics at 25 °C free-air temperature (unless otherwise noted)

PARAMETER
Static reverse current
VR - 3 V
TEST CONDITIONS
IF ~ 10 mA
MIN TYP
0.05
1.2
MAX
100
1.5
UNIT
pA
V
VF
"0 IORM Repetitive off-state current, either direction VORM ~ 400 V, See Note 5 10 100 nA
CD
... dv/dt Critical rate of rise of off-state voltage See Figure 1 100 Vips
en dv/dtlcl Critical rate of rise of commutating voltage 10 ~ 15 mA, See Figure 1 0.15 VIpS
TlL3020 15 30
en Input trigger current, TIL3021 8 15
o 1FT
either direction TIL3022
Output supply voltage ~ 3 V
5 10
mA
Dr
ro+ TIL3023 3 5
...
o VTM Peak on-state voltage, either direction ITM - 100 mA 1.4 3 V
-en IH Holding current, either direction
NOTE 5: Test voltage must be applied at a rate no higher than 12 V/~s.

100 pA
3-214 TEXAS -II}

INSTRUMENTS
Vee
(11
--+ Vin - 30 V rms

--+
(21
10 k{J
INPUT
(See Note 61
&I
dv/dt = 2 v'21rlVin
The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and increasing
-...
CI)
frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then ....o
CO
be used to calculate the dv/dt(cl according to the formula shown above.
"0
FIGURE 1. CRITICAL RATE OF RISE TEST CIRCUIT
-...
.!!!
CI)
CI)
c..
::l
o
(j
....oC-
O
TEXAS • 3-215
INSTRUMENTS
POST OFFice BOX 655303 • DALLAS, TeXAS 75265
EMITTING DIODE NORMALIZED TRIGGER CURRENT

vs
FREE-AIR TEMPERATURE ON-STATE CHARACTERISTICS
1.4 800
oCt
600
Output tw - 800
IF - 20 rnA
/,5
1
I-
.!!-
~I:
1.3
E
~I: 400
f = 60 Hz
TA - 25°C
I
~ 1.2
::J U
~
:; 200 /
U
~
'"
.2'
1.1
.,
S
ci5 0 /
~
.,
-0
'-- -
i:
0
-200 /
"".,
....
1.0
.!:!
/
~
iii
E 1 -400
z
is 0.9 ~
.t- -600 /
0.8 -800 / i
o -50 -25 o 25 50 75 100 -3 -2 -1 o 2 3
't:I T A - Free·Air T ernperature - °C VTM-Peak On-State Voltage-V
rot-
o(") FIGURE 2 FIGURE 3
o
c:
't:I MAXIMUM RATINGS
...Ci"
(I)
vs
(j) PULSE DURATION
o ~ 3 ~"'I· 1
;- 1 1"';11 ~I ~~~~~" ~"'I'·
rot- E
o
... ~
-
(I) U
::J
.,
1ii
U; 2
i:
o ...... ~
"".,
~
......
.,
.<:
.t::
...... ~
1;;
Co
~
I:
o
z
I
~
til
.t- 0 1II11il111 ~",Im II 1111111111 ",dull
0.01 0.1 10 100
tw-Pulse Duration-rns
FIGURE 4
3-216 TEXAS •
INSTRUMENTS
TIL3020-TlL3023
Rio (1) (6) 180!1

Vee --JV\J'\.--+---,
(2)
- (4)
220 V, 60 Hz
FIGURE 5, RESISTIVE LOAD
Rio (1)
II
-
Vee --JV\J'\.--+--,
-...o
C/)
...
~
(2) oC/)
-...
C/)
IGT:5 15 mA
~
FIGURE 6. INDUCTIVE LOAD WITH SENSITIVE-GATE TRIAC C.
:::I
o
(J
...
o
c.
Rio (1)
o
Vee --.JVVIr--+---,
(2)
-
15mA < IGT < 50mA
TEXAS • 3-217
INSTRUMENTS
o
'0
r+
o
(')
o
r::
'0
CD
~
VI
VI
o
ii)
r+
o
~
-
VI
3-218
I
Gene,rallnrormation ·. . 1.
CCO ImageSensors.andSuppoft Functions .•
Optoco~pter$ :Usolator$)
Intelligent LED Displays
Inf,iRr·Ad. emitt~.~s ···anctPhototransistors
. Quality and Reliability
..Applications· •...
4-1
II
r-
m
o
o
(ii'
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iii
-<
Ul
4-2
TIL302, TIL302A, TIL303, TlL303A, TlL304, TIL304A
NUMERIC DISPLAYS
01021, APRIL 1971 - REVISED JUNE 1982
RED SOLID-STATE DISPLAYS

• 6,9-mm (O.270-lnchl Character Height • Sign, Overflow, Left or Right Decimal Capability
• High Luminous Intensity • Wide Viewing Angle
• Low Power Requirements • Compatible with Most TTL and DTL Circuits
• Each Unit Visually Checked for Uniformity of Elements
mechanical data
These assemblies consist of display chips mounted on a header with either a red molded plastic body for the TI L302,
TI L303, and TI L304 or a red plastic cap for the TI L302A, TI L303A, and TI L304A, Multiple displays may be mounted
on 11,43-mm (0.450-inch) centers.
TIL302
TIL302A TIL304
TlL303 TIL304A
TIL303A
4SIDES
L ...
'"C ""'' ' ' l
0.25 10.0101 N.OM 9.66(O.38(ii-
11,501(0.020)
0,406(0.016)
1),/6(0.0301 ALLPINS
-+---tc-.--+-t-D,,---·Q-
i '~r'
a
4,610.1801
'i. OF PIN AOW 'i.0FPINROW 'i.0FPINAOW 'i0FPINADW

'i. OF PIN ROW 'i.0F PIN ROW II)
NOTES; 8. All linear dimensions are 10 millimeters and parenthetically in inches. >
co
b. Lead dimensions are not controlled above the seating plane.
c. Centerlines of character segments and decimal points are shown as dashed lines. Associated dimensions are nominal. Q.
II)
d. The true-position pin spacing is 2,54 mm (0.100 inch) between center lines. Each centerline is located within
0,26 mm (0.010 inch) of its true longitudinal position relative to pins 1 and 11. C
e. On TI L302A, TI L303A, and TI L304A devices, the 3 mold indentations are not present.
TlL302, TlL302A TlL303, TIL303A TIL304, TIL304A

cW
...I
C& D0-f=-=-- -----""""\

I
I
I
I
PINS 4, 5, AND 12 OMITTED PINS 5,11, AND 12 OMITTED PINS 2. 3, 4, 5, 6,12. AND 13 OMITTED
specifications per the tarms of Taxas Instruments TEXAS . " 4-3
=~~=:~~i;ai'::1~1e ~!:~~~i:r :Iio:=:::::t:~~s not INSTRUMENTS
TIL302, TIL302A, TIL303, TIL303A, TIL304, TIL304A
NUMERIC DISPLAYS
Reverse Voltage at 25°C Free-Air Temperature:

Each Segment ......... . 6V
Decimal Point ................. . 3V
Peak Forward Current, Each Segment or Decimal Point (See Note 1) 200mA
Continuous Forward Current:
Each Segment or Decimal Point . . . . . . 30mA
Total for TI L302, TI L302A, TI L303, TI L303A 240mA
Total for TI L304, TI L304A. . . 150mA
Operating Free·Air Temperature Range O°C to 70°C
Storage Temperature Range -25°C to 85°C
NOTE 1: This value applies for PRR ~ 60 Hz, duty cycle ~ 10%.
operating characteristics of each segment at 25° C free-air temperature (unless otherwise noted)
PARAMETER TEST CONOITIONS MIN TYP MAX UNIT
Iv Luminous Intensity (See Note 2) 100 275 /led
Ap Wavelength at Peak Emission 660 nm
IF=20mA
f!.A Spectral Bandwidth 20 nm
VF Static Forward Voltage 3 3.4 3.8 V
IF -20mA.
aVF Average Temperature Coefficient of Static Forward Voltage -2.7 mVfC
TA =O°Cto70°C
IR Static Reverse Current VR - 6 V 100 /lA
C Anode-ta-Cathode Capacitance VR 0, f 1 MHz 85 pF
III
;:,
operating characteristics of decimal point at 25°C free-air temperature (unless otherwise noted)
Iv
Ap
PARAMETER
Luminous Intensity (See Note 2
Wavelength at Peak Emission
TEST CONDITIONS
IF = 20 mA
MIN
40
TYP MAX
110
660
UNIT
/led
nm
r+ f!.A Spectral Bandwidth 20 nm
CD
VF Static Forward Voltage 1.5 1.65 2 V
cO' aVF Average Temperature Coefficient of Static Forward Voltage
IF-20mA,
-1.4 mVfC
CD TA=O°Cto70°C
;:, Static Reverse Current 100
r+ IR VR - 3 V /lA
Anode-to-Cathode Capacitance f -1 MHz 120 pF
r- C VR - 0,
m NOTE 2: Luminous intensitY is measured with a !ight sensor and fi!ter combination that approximates the C1E (!nternational Commission on
C Illumination) eye-response curve
C
(ii"
"0
Q)
-<(/)
4-4
TEXAS
INSTRUMENTS
-1!1
TlL302, TIL302A, TIL303, TIL303A, TlL304, TIL304A
NUMERIC DISPLAYS
RELATIVE LUMINOUS INTENSITY

vs
RELATIVE SPECTRAL CHARACTERISTICS FREE·AIR TEMPERATURE
oU
1.0 4
IF = 20 rnA ( '\ ~ IF = Constant
0.9 TA = 25°C
\ "
(!
~
0.8 -- e--. ... 2
·in
c:
~
c:
0
~
::J
c:
·E
::J
...J
0.7
0.6
0.5
0.4
\
\
B
'"
Q)
::J
n;
>
~
.~
a;
0.7
r--
-
~
a: 0.4
.,
Q)
."
0.3
~
·in
'"
a;
a: 0.2 / \ ~
c:
c: 0.2
0.1
V \ ::J
o
V c:
0
600 620 640
X-Wavelength-nrn
660 ""
680 700
.~ 0.1
...J
o 10 20 30 40 50
TA-Free-Air Ternperature-°c
60 70
FIGURE 1 FIGURE 2
<t
o
N
E
~ 1.4
...
1.6
TA = 25°C
vs
FORWARD CURRENT
[7
/
40
20
FORWARD CONDUCTION CHARACTERISTICS
.,
TA = 25°C
,
•II)
>-
CO
C.
.~
c
: 1.2 <t DECIMAL
EACH cW
n;
>
::J
1.0 17 E
.!.c:
POINT
SEGMENT
B
~
.., 0.8 / U
~
::J
10
7 ...
...J
C
'" "E Q)
a;
a: 0.6 / '"~ 4 .~
1/
~
...
0
·in u. Q)
/ I
~ 0.4 u.
c: [7 2
C
~ 0.2
o
c:
·E o 1
::J
...J
o 5 10 15 20 25 30 o 2 3 4 5
IF-Forward Current-rnA VF-Forward Voltage-V
FIGURE 3 FIGURE4
TEXAS • 4-5
INSTRUMENTS
TIL302. TlL302A. TlL303. TIL303A. TlL304. TlL304A
NUMERIC DISPLAYS
TYPICAL APPLICATION DATA TlL303

TIL302
TIL302A TIL303A
VCC~\rs'rGND VCC~~:;~D
8COINPUT
NOTE: A 1 and R2 are selected for desired brightness.

FUNCTION TABLE
SN7447A
DECIMAL
INPUTS SEGMENTS
OR Bl/RBOt NOTE
FUNCTION LT RBI D C B A • b c d e f 9
0 H H L L L L H ON ON ON ON ON ON OFF 1
1 H X L L L H H OFF ON ON OFF OFF OFF OFF 1
2 H X L L H L H ON ON OFF ON ON OFF ON 1
3 H X L L H H H ON ON ON ON OFF OFF ON 1
4 H X L H L L H OFF ON ON OFF OFF ON ON 1
5 H X L H L H H ON OFF ON ON OFF ON ON 1
6 H X L H H L H OFF OFF ON ON ON ON ON 1
7 H X L H H H H ON ON ON OFF OFF OFF OFF 1
8 H X H L L L H ON ON ON ON ON ON ON 1
9 H X H L L H H ON ON ON OFF OFF ON ON 1
10 H X H L H' L H OFF OFF OFF ON ON OFF ON 1
H L H H OFF OFF ON ON OFF OFF ON
....
::J 11
12
H
H
X
X H H L L
H
H OFF ON OFF OFF OFF ON ON
1
1
~ 13 H X H H L H H ON OFF OFF ON OFF ON ON 1
~' 14 H X H H H L H OFF OFF OFF ON ON ON ON 1
CD 15 H X H H H H H OFF OFF OFF OFF OFF OFF OFF 1
....
::J BI
RBI
X X X X X X L
L
OFF OFF OFF OFF OFF OFF OFF 2
H L L L L L OFF OFF OFF OFF OFF OFF OFF '3
r
m LT L X X X X X H ON ON ON ON ON ON ON 4
C H = high level (logic 1 In positive logic), L = low level (logic 0 tn positive logic), X - .rrelevant.
C tBI/RBO is wire-AND logic serving as blanking input (81) and/or ripple~blanking output (RBO).
(ii' NOTES: 1. The blanking input (81) must be open or held at a high logic level when output functions 0 through 15 are desired. The
"0 ripple~blanking input (RSI) must be open or high if blanking of a decimal zero is not desired.
CIT 2. When a low logic level is applied directly to the blanking input (8il. all segment outputs are off regardless of any other
<til input.
3. When the ripplewblanking input (RBI) and inputs A, B, C, and 0 are at a low logic level with the lamp test input high, all segment
outputs are off and the ripple-blanking output (RBO) of the decoder goes to a low level (response condition).
4. When the blanking input/ripple blanking output (BI/RBO) is open or held high and a low Is applied to the lamp-test input, all
segments are illuminated.
NUMERICAL DESIGNATIONS-RESULTANT DISPLAYS
4-6 TEXAS •
INSTRUMENTS
The TlL303, TIL303A, TlL304, and TlL304A are used in this application to make a three·digit display with sign, which is capable of 100%
overrance ("1" plus three digits). The decimal point is located via an external range switch. The clear function will blank the overflow digit and
reset the three digits to zero. Following resetting, input pulses will be counted, decoded, and displayed.
VCC;5V--------~----------~~--~~----------~----~----~----------~~--~~----~----------~----~-----,
Rl~ R2~ R2~ R2~ R2 R1

(See Note A) (See Note At (See Note A)
"U>S'GN~~~~~~~~~~=H++++=~~+H+H-~~
;g -I
~ <
-g
~z INPUT
(See Note B)
n
»
19 00 v 'CAAAOOO ~ IQOQOOQo
r -I
!~
ivee d 9 I BI:RBOJVcc d e a beg I BllRBOjVcc d • a b ~ I
~
f
r. f D
;:::
g:;:c~ GNO ~ w
c:~
8~~
IT -=-
-g
r =
N
LAMP
n
» -I
'i'f'I'l TEST
-I ;:::
~z W
~.. Ul4r
(5
2 =
N
... c :P
»
~ -I -I
» ;:::
w
=
W
~"
-I
V RO(1) ;:::
W
________+-______________________-+___
"0(2)
2
=
w
C~~~J~R-----t----------------------------- C::P
3:-1
m-
:::ICIIr-
_w
n=
c-
.j::o
NOTES: A. R1 and R2 are selected for desired brightness.
B. Grounding of any of these lines will illuminate the associated function. 0_
--I
"C:Ir-
r-w
W... Vee bus :a=o=
0:a=o
<.j::o
"'.!...J" Intelligent LED Displays II

II
r-
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C
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iii
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(II
4-8
TlL305
5 x 7 ALPHANUMERIC DISPLAY
01033, MAY 1971-REVISEO MARCH 1983
SOLID-STATE DISPLAY WITH RED

TRANSPARENT PLASTIC ENCAPSULATION
• 7,62-mm (O.300-inch) Character Height
• High Luminous Intensity
• Low Power Requirements
• Wide Viewing Angle
• 5 X 7 Array with X-Y Select and Decimal
• Compatible with USASCII and EBCDIC Codes
mechanical data
This assembly consists of a display chip mounted on a printed circuit board with a red molded plastic body. Multiple
displays may be mounted on 11 ,43-mm (0.450-inch) centers.
1,91 (0.075) MAX

BOTH ROWS COLUMN D.P.
BOTTOM VIEW
'i.--'----t---Ere-a--B-l3-
T
19,30 (0.760)
18,29 (0.720)
0,4
0'3 20
'i. -.---+---e-e-fr-I3-B- 0'2 30
•
1,27 (0.050) DDDDD
NOM 00000 <011 40
(See Note b)
DDDDD 4,3
(0.1701
DECIMAL DDDDD <I) '0 50
POINT NOM
rnODDD ---*-- <09 60+---.- II)
I >
C\'J
TOP VIEW ORIENTATION
C.
3,18 (0.125) (See Note al
.!!!
C
.-;--,-4-,---, 2,79(0.1101 'i.
~"'u'""~"'
C
W
...J
'-,Ir------...
~IMIN
I
--+\ ~ ~::: :~:~~~:

OIAALl PINS
NOTES: a. The true-position spacing is 2,54 mm (0.100 inch) between lead centerlines.
Each pin centerline is located within 0,25 mm (0.010 inch) of its true
longitudinal position.
b. Vertical and horizontal spacing between centerljnes of rows and columns
nominally 1,27 mm (0.050 inch).
ALL DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES CL-37
~
TEXAS
:~~:~:~~i~8i~:1~1~ ~!:~:~ti:r :I~o::~:;~:~~s not INSTRUMENTS
4-9
T1L305
5 x 7 ALPHANUMERIC DISPLAY
ab~olute maximum ratings over openrting free-air temperature range (unless otherwise noted)
.Reverse Voltage at 25°C Free-Air Temperature 3V
Peak Forward Current, Each Diode 100mA
Average Forward Current (see Note 1):
Each Diode ....... . lOrnA
Total ..•..... 200mA
Operating Free·Air Temperature .Range 0° to 70°C
operating characteristics of each diode at 25°C free-air temperature (unless otherwise noted)
Iv Luminous Intensity (see Note 2) 40 110 !led
Ap Wavelength at Peak Emission 660 nm
IF= lOrnA
tl.: Spectral Bandwidth 20 nm
VF Static Forward Voltage 1.5 1.65 :i! V
IF -lOrnA,
"'VF Average Temperature Coefficient of Static Forward Voltage -1.4 mVtC
TA = O°C to 70°C
IR Static Reverse Current VR =3V 10 !lA
C Anode-ta-Cathode Capacitance VR = O. 1-1 MHz 80 pF
NOTES: 1. This average value applies for any 1-ms period.

2. Luminous intensity is measured with a light sensor and filter combination that approximates the CIE (International Commission
on Illumination) eye-response curve.
II .RELATIVE LUMINOUS INTENSITY

vs
F.REE-AIR TEMPERATURE
vs
FORWARD CURRENT
2.0
TA'" 2SoC
40
FORWARD CONDUCTION
CHARACTERISTICS
TA~25"C
IF'" Constant --il-+-t---+--I 2 1.8
~3
~
~ 1.6 r- t- g ~
20
"
~
~
r--_
~«
> E 1.' l - I- t
E
L
II
n t- d
1 :!::: 0
! 10
~~~~~~~~~~~~
1.2 r-
.~ 0.7 1.0 " ~
&!?; g :;; 0.8 <~- ~

r- 2 0.4 .~ ~ II A c,G ~
m .~ t-+--+---t-t-+--+---i -'> 0.6
~o"o"it-t- ~
C
C
j
j
~
0.2 1-+--1f-+--1-+--1--1
0.1 ~...L._.L.......J.._-'---'_..J...--J
! 0.'
0.2
I V I
I
I
I I
(ij" 10 20 30 40 50 60 70 10 20 30 .0 50 a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
"0 TA-free.Air Temperature- "c IFM-Peak Forward Current rnA VF-Forward Voltage-V
;- FIGURE 1 FIGURE 2 FIGURE 3
'<
UI
4-10 TEXAS . "

INSTRUMENlS
T1L306, TIL306A, TIL307, T1L307 A
NUMERIC DISPLAYS WITH LOGIC
01034, REVISED JUNE 1982
SOLID-STATE DISPLAYS WITH INTEGRAL TTL MSI CIRCUIT CHIP FOR

USE IN ALL SYSTEMS WHERE THE DATA TO BE DISPLAYED IS
THE PULSE COUNT
• 6,9-mm (O.270-lnchl Character Height • Easy System Interface
• High Luminous Intensity • Wide Viewing Angle
• TI L306 and TI L306A

Have Left Decimal
• Internal TTL MSI Chip and Counter, Latch, Decoder,
and Driver
• TlL307 and TIL307A • Constant-Current Drive for Light-Emitting Diodes

Have Right Decimal
mechanical data
These assemblies consist of display chips and a TTL MSI chip mounted on a header with either a red molded plastic
body for the TI L306 and TI L307 or a red plastic cap for the TI L306A and TI L307 A. Multiple displays may be mounted
on 11,43-mm (0.450-inch) centers.
~J!?:~
3.38 (0.133)
'..,'NG 'CAN' TF-r----.-'

lSeeNotl!bl~ 4,5(0.1110) PIN ASSIGNMENTS
:L0,305(0.012)
PIN 1 LATCH OUTPUT 0B
omfo~OOiiI (BINARY WEIGHT 2)
PIN 2 LATCH OUTPUT QC
4,5 (0.115( (BINARY WEIGHT 4)
MAX PIN 3 LATCH OUTPUT QD
4 PLACES
(BINARY WEIGHT 8)
PIN 4 LATCH OUTPUT QA
,q
o
,-,
U-
O
J
0,508(0.020)
O,406!O.016)
PIN 5
PIN 6
(BINARY WEIGHT 1)
LATCH STROBE
INPUT
RIPPLE-BLANKING
INPUT II
15
a
!
ALL PINS PIN 7 MAXIMUM-COUNT
o 3
OUTPUT
" PIN 8
PIN 9
GROUND
PARALLEL COUNT
ENABLE INPUT
::·L::::: PIN 10
PIN 11
SERIAL COUNT
ENAB LE INPUT
RIPPLE-BLANKING
OUTPUT
PIN 12 CLEAR INPUT
PIN 13 DECIMAL POINT
1 2,!)4(O.100IT.P.
PIN 14
INPUT
BLANKING INPUT
iia:'r:!E!1 PIN 15 CLOCK INPUT
!------! PIN 16 SUPPLY VOLTAGE,
I 10.67(0.4201 I Vec
j.-- 9,65 (O.lao) ~
NOTES: a. All linear dimensions are in millimeters and parenthetically in inches.
c. Centerlines of character segments and decimal points are shown as dashed lines, Associated dimensions are nominal.
d. The true-position pin spacing is 2,54 mm (0.100 inch) between centerlines. Each centerline is located with 0,26 mm (0.010 inch)
of its true longitudinal position relative to pins 1 and 16.
e. On TIL306A and TIL307A devices, the 4 mold indentations are not present.
TIL306 TIL307
TIL306A TIL307A
PRODUCTION DATA documonls contain information Copyright © 1982, Texas Instruments Incorporated
currant 8S of publication data. Predacts conform to
specifications par the tarms of Texas Instruments
TEXAS •
=::i:;-i~~~lJi =:~: :'iD:.a;:.:::.~ nDt INSTRUMENlS
4-11
POST .OFFICE BOX 655303 • DALLAS, TEXAS 75265
f'
~
IV
sAelds!o O;!l luo6m01UI II -
C
::l
2 ....
Cr=
~ 3l!P''''
o· mO
::l =?
2!. c:; ....
~
LOGIC OUTPUTS
__________-JA~ ____________ ~ Vee O
C-
cr=
--w
~ mo
( MAX COUNT QA OB QC QD TO LOGIC CHIP
C-
-am
r-):Io
iii" ):10-
'!:l
Ol
< ....
m __
3 r-
:e w
--0
....:z:-"""
r-:::!
Or-
c;,w
-0
~
o
n"""
):10
~z
~~
m::c~
8C:~
;,~
/!I""l
~Z
§Ul"
~
TIL307 AND TIL307A HAVE RIGHT DECIMAL
'"
N
<>
'"
RBO DECIMAL
NODE POINT
INPUT INPUT
INPUT
SYNCHRONOUS BCD COUNTER, 4-BIT LATCH, DECODER/DRIVER, SEVEN-SEGMENT LED DISPLAY WITH DECIMAL POINT
TIL306. TIL306A. TIL307. T1L307A
description
These internally-driven seven-segment light-emitting-diode (LED) displays contain a BCD counter, a four-bit latch, and
a decoder/LED driver in a single 16-pin package. A description of the functions of the inputs and outputs of these
devices follows:
FUNCTION PIN NO. DESCRIPTION

CLEAR INPUT 12 When low, resets and holds counter at O. Must be high for normal
counting.
CLOCK INPUT 15 Each positive-going transition wi II increment the counter provided that the
circuit is in the normal counting mode (serial and parallel count enable
inputs low, clear input high).
PARALLEL COUNT 9 Must be low for normal counting mode. When high, counter will be
ENABLE INPUT inhibited. Logic level must not be changed when the clock is low.
(PCEI)
SERIAL COUNT 10 Must be low for normal counting mode, also must be low to enable
ENABLE INPUT maximum count output to go low. When high, counter will be inhibited
(SCEI) and maximum count output will be driven high. Logic level must not be
changed when the clock is low.
MAXIMUM COUNT 7 Will go low when the counter is at 9 and serial count enable input is low.
OUTPUT Will return high when the counter changes to 0 and will remain high during
counts 1 through 8. Will remain high (inhibited) as long as serial count
enable input is high.
LATCH STROBE 5 When low, data in latches follow the data in the counter. When high, the
INPUT data in the latches are held constant, and the counter may be operated
II
independentlY.
LATCH OUTPUTS 4,1,2,3 The BCD data that drives the decoder can be stored in the 4-bit latch and
(OA, OB, OC, QD) is available at these outputs for driving other logic and/or processors. The
binary weights of the outputs are: OA = 1, OB = 2, Oc = 4, QD = 8. C/)
DECIMAL POINT 13 Must be high to display dl)cimal point. The decimal point is not displayed
>
INPUT when this input is low or when the display is blanked.
!2
Co
BLANKING INPUT 14 When high, will blank (turn off) the entire display and force RBO low. .~
(BI) Must be low for normal display. May be pulsed to implement intensity o
control of the display. oW
RIPPLE-BLANKING 6 When the data in the latches is BCD 0, a low input will blank the entire ...J
INPUT display and force the RBO low. This input has no effect if the data in the
(RBI) latches is other than O.
RIPPLE-BLANKING 11 Supplies ripple-blanking information for the ripple-blanking input of the

OUTPUT next decade. Provides a low if BI is high, or if RBI is low and the data in
(RBO) the latches is BCD 0; otherwise, this output is high. This pin has a resistive
pull-up circuit suitable for performing a wire-AND function with any
open-collector output. Whenever this pin is low the entire display will be
blanked; therefore, this pin may be used as an active-low blanking input.
The TTL MSI circuits contain the equivalent of 86 gates on a single chip. Logic inputs and outputs are completely
TTLlDTL compatible. The buffered inputs are implemented with relatively large resistors in series with the bases of the
input transistors to lower drive-current requirements to one-half of that required for a standard Series 54/74 TTL input.
The serial-carry input, actually two internal loads, is rated as one standard series 54/74 load.
TEXAS
INSTRUMENTS
"'!1 4-13
TILl06, TlL306A, TIL307, TIL307A
description (continued)
The logic outputs, except RBO, are active pull-up, and the latch outputs QA, QB, QC, and QD are each capable of
driving three standard Series 54/74 loads at a low logic level or six loads at a high logic level while the maximum-count
output is capable of driving five Series 54/74 loads at a low logic level or ten loads at a high logic level. The RBO node
with passive pull-up serves as a ripple-blanking output with the capability to drive three Series 54/74 loads_
The LED driver outputs are designed specifically to maintain a relatively constant on-level current of approximately
seven milliamperes through each LED segment and decimal point_ All inputs are diode-clamped to minimize
transmission-line effects, thereby simplifying system design_ Maximum clock frequency is typically 18 megahertz and
power dissipation is typically 600 milliwatts with all segments on_
The display format is as follows:
The displays may be interconnected to produce an n-digit display with the following features:
• Ripple-blanking input and output for blanking leading or trailing zeroes
• Floating-decimal-point logic capability
• Overriding blanking for suppressing entire display or pulse-modulation of LED brightness
• Dual count-enable inputs for parallel look-ahead and serial ripple logic to build high-speed fully synchronous,
multidigit counter systems with no external logic, minimizing total propagation delay from the clock to the
last latch output
• Provision for ripple-count cascading between packages
• Positive-edge-triggered synchronous 8CD counter
• Parallel BCD data outputs available to drive logic processors or remote slaved displays simultaneously with
II...
data being displayed
• Latch strobe input allows counter to operate while a previous data point is displayed
• Reset-to-zero capability with clear input.
:::J absolute maximum ratings over operating case temperature range (unless otherwise noted)
CD Supply Voltage, V CC (See Note 1): Continuous 5.5 V
Nonrepetitive Peak, tw .;; 100 ms 7V
cE' Input Voltage (See Note 1) . . . _ . . . . 5.5 V
CD DoC to 85°C
...
:::J
Operating Case Temperature Range (See Note 2)
Storage Temperature Range ...... .
NOTES: 1. Voltage values are with respect to network ground terminal.
-25°C to 85°C
r- 2. Case temperature is the surface temperature of the plastic measured directly over the integrated circuit. Forced-air cooling may
m be required to maintain this temperature.
C recommended operating conditions
C MIN NOM MAX UNIT
0' Supply Voltage, V CC 4.75 5 5.25 V
"C QA, QB. QC. QD, RBO 3
Low Logic level
iii' Maximum Count 5
<rn Normalized Fan-Out from Each Output, N
RBO 3
(to Series 54/74 I ntegrated Circuits)
High Logic Level QA. QB. QC. QD 6
Maximum Count 10
High Logic Level 25
Clock Pulse Duration, tw(clock) ns
Low Logie Level 55
Clear Pulse Duration, tw(clear} 25 ns
Latch Strobe Pulse Duration, tw(latch strobe) 45 ns
I Serial Carry and Parallel Carry 30
Setup Time, tsu ns
I Clear 1nactive State 60
4-14 TEXAS ~
INSTRUMENTS
TIL306, TIL306A, TIL307, TIL307 A
operating characteristics at 25° e case temperature

PARAMETER TEST CONDITIONS MIN TYP; MAX UNIT
Iv
Luminous Intensity I FigureB Vee=5V
700 1200 ~cd
(See Note 3) I Decimal Point 40 70 ~cd
Ap Wavelength at Peak Emission Vee- 5V, See Note 4 660 nm
AA Spectral Bandwidth Vee= 5V, See Note 4 20 nm
VIH High·Level Input Voltage 2 V
VIL Low-Level Input Voltage 0.8 V
VIK I nput Clamp Voltage Vee = 4.75 V, 11=-12mA -1.5 V
RBO Vee- 4.75 V, 10H - -120~A
VOH High-Level Output Voltage 0A, 0B, Oe, 00 Vee - 4.75 V, 10H - 240~A 2.4 V
Maximum Count Vee = 4.75 V, 10H - -400 ~A
Low-Level Output Voltage °A,OB,Oe,Oo,RBO Vee = 4.75 V, 10L = 4.8mA
VOL 0.4 V
(See Note 5) Maximum Count Vee - 4.75 V, 10L 8mA
II Input Current at Maximum Input Voltage Vee - 5.25 V, VI - 5.5 V 1 mA
Serial Carry 40 "A
IIH High-Level Input Current RBO Node Vee = 5.25 V, VI = 2.4 V -0.12 0.5 mA
Other Inputs 20 "A
Serial Carry -1.6
IlL Low-Level Input Current RBO Node Vee = 5.25 V, VI = 0.4 V -1.5 -2.4 mA
Other Inputs -0.8
0A, 0B, 0e, 00 -9 -27.5
lOS Short-Circuit Output Current Vee = 5.25 V mA
Maximum Count -15 -55
ICC Supply Current Vee = 5.25 V, See Note 4 120 200 mA
+AII typical values are at Vee 5 V.

'::=
NOTES: 3. Luminous intensity is measured with a light sensor and filter combination that approximates the CI E (International Commission
4. These parameters are measured with all LED segments and the decimal point on.
5. This parameter is measured with the display blanked.
switching characteristics, Vee = 5 V, Te = 25°e

II U)
PARAMETER§
FROM TO
TEST CONOITIONS MIN TYP MAX UNIT >
ca
(INPUT) (OUTPUT)
f max 12 18 MHz C.
U)
tPLH 12
tpHL
Serial Look-Ahead Maximum Count
eL=15pF, RL = 560 n, 23
ns
is
tpLH
tpHL
Clock Maximum Count
See Figure 1 26
29
ns cW
tpLH
tPHL
tpHL
Clock
Clear
0A, 0B, 0e, 00
OA, OB, 0e, 00

eL=15pF,
See Figure 1
RL = 1.2 kn,
28
38
57
ns
ns
...
..J
s::::
Q)
§fmax =:::; Maximum clock frequency

en
tpLH == Propagation delay time, low-to-high-level output
tpH L == Propagation delay time, high-to-Iow-Ievel output ...
Q)
s::::
OUTPUT Vee
NOTES: A. CL includes probe and jig capacitance.

FROM OUTPUT
B. All diodes are 1 N3064.
UNOERTEST --~~~~-4~~~~~~--~
LOAO CIRCUIT-FIGURE 1
TEXAS • 4-15
INSTRUMENTS
TlL306. TIL306A. TlL307. TIL307A

RELATIVE SPECTRAL CHARACTERISTICS vs
u CASE TEMPERATURE
1.0 oil) 4
VCC = 5 V ( '\ N I I
0.9 f-Vcc = 5 V
TC = 25"C "
~
0.8 \ ~
~ 2
'in
t:
0.7 \ .,'":J
l!l
t: \ -.;
>
t-- r--
-
0.6
~
:J
0
B
t:
0.5 ~ 0.7
';:;
'E -.....
:J
0.4
'"
a;
.,>
...J
a: 0.4
';:; 0.3 1\ ~
'in
'"
a;
a: 0.2 / \ t:
l!l
c 0.2
0,1
V \ ~
:J
o
0
V I'"
t:
'~ 0,1
600 620 640 660 680 700 ...J 0 10 20 30 40 50 60 70
A-Wavelength-nm Tc-Case Temperature-oC
FIGURE 2 FIGURE 3
II
3"
r+
CD
cC'
CD
::J
r+
r-
m
C
C
(ij"
'0
Dr
-<
Ul
4·16 TEXAS . "

INSTRUMENTS
TIL308. TIL308A. TIL309. TIL309A
D1096, MARCH 1972-REV1SED JUNE 1982
SOLID-STATE DISPLAYS WITH INTEGRAL TTL MSI CIRCUIT CHIP

FOR USE IN ALL SYSTEMS REQUIRING A DISPLAY OF BCD DATA
• 6,9-mm (O.270-lnch) • Easy System Interface
Character Height
• Wide Viewing Angle
• TIL308 and TIL308A
Have Left Decimal • Internal TTL MSI Chip with Latch, Decoder, and Driver
• TI L309 and TI L309A
• Constant-Current Drive for Light-Emitting Diodes
Have Right Decimal
mechanical data
body for the TI L308 and TI L309 or a red plastic cap for the TI L308A and TI L309A. Multiple displays may be
mounted on 11,43-mm (0.450-inch) centers.
4::4?:(9·l~
3,38 (0.133]
TF11==r
ISeeNOt8b)~
""ING'lANE
PIN ASSIGNMENTS
4,5(0.180)
FOR BOTH TYPES
0,30510.012)
PIN 1 LATCH OUTPUT QB
0,203 (O.OOB) (BINARY WEIGHT 21
7,62:+0,26 PIN 2 LATCH OUTPUT Qc
10.300i0.Q10)
4,5(0.175) (BINARY WEIGHT 41
MAX
4 PLACES
-.--t--ri---H
r- BOT~ARXOWS
1,9110.075)
PIN 3
PIN 4
LATCH OUTPUT QD
(BINARY WEIGHT 81
LATCH OUTPUT QA
(BINARY WEIGHT 11
A-J
II
PIN 5 LATCH STROBE INPUT
o ~-t PIN 6 LATCH DATA INPUT C
"o R
If
0,508(0.020) (BINARY WEIGHT 41
"o n 0,406(0.016)
ALL PINS
PIN 7 LATCH DATA INPUT D
14 , PIN 8
(BINARY WEIGHT 81
GROUND (I)
26,67(1.050) 0 PIN 9 NO INTERNAL >-
CtI
CONNECTION
,PIN 10 LATCH DATA INPUT B
(BINARY WEIGHT 21
0..
(I)
PIN
PIN
11
12
BLANKING INPUT
LATCH DATA INPUT DP i:5
25'L'6I""" !-J,:_ _----l
2.54(O.100)T,P.
PIN
PIN
13
14
LED TEST
LATCH OUTPUT DP oW
PIN 15 LATCH DATA INPUT A
...r::
...J
14 PLACES
(See N01ed} (BINARY WEIGHT 11
PIN 16 SUPPLY VOLTAGE.
I 10,67(0.420) I
~9.65(O.380)~ VCC
Q)
NOTES: a. All linear dimensions are in millimeters and parenthetically in inches. .~

c. Centerlines of character seqments and decimal paints are shown as dashed lines. Associated dimensions are nominal. !r::
d. The true-position pin spacing is 2,54 mm <0.100 inch) between centerlines. Each centerline is located within
0,26 mm (0.010 inch) of its true longitudinal position relative to pins 1 and 16.
e. On TI L.30BA and TI L.309A devices. the 4 mold indentations are not present.
TIL308 TIL309
TlL308A A TIL309A
Fl7!s
E!_7 D
c
DoP _
PRODUCTION DATA documants contain information Copyright © 1982, Texas Instruments Incorporated
current as at publication date. Products conform to
lpecificatiodl par the terms of Texas Inltrumants TEXAS " ,
::=:~~~ai:I~7i =::i:; :'f:=:::~:.s nat INSTRUMENTS
4-17
f"
~
00
sAelds!C C'" IUa6!11alui II -
c: z-t
:::I ci= .
LATCH OUTPUTS
~
o·
:::I
m=
S:W
25!?'
~ Vee !!!.
BLANKING ~
r:r '"'-t
INPUT
I TO LOGIC CHIP ~ 0" Cli=
-w
~ cn=
LATCH
STROBE
INPUT --4>-- r-U c.. -aca
r-l>
iii"
~bE
l>-
~
c.a
iil <-t
cn_
3 r-
:e w
-=
A -lea
:c-
- r-:::!
Clr-
~~
---I
C)w
-=
,",ea
~ l>
z ~ ~
'-'=;:..t
~ ~b
~ ~ )---- f
~~
;cr;;l ---;
~-
~~
~
~P-l j'
LATCH
@'
DATA
-L.J
~~
INPUTS
~ I
Y-
~~
~ dP~
~ ~
~~
TIL30S AND TIL30BA HAve LEFT DECIMAL
TIL309 ANDTIL309A HAVE RIGHT DECIMA
DP
V -LJ ~
LED
TEST
INPUT "
TlL30R. TIL30RA. TlL309. TIL309A
description
These internally-driven seven-segment light-emitting-diode (LED) displays contain a five-bit latch and a decoder/LED
driver in a single 16-pin package. A description of the functions of the inputs and outputs of these devices follows:
FUNCTION PIN NO. DESCRIPTION
LATCH STROBE INPUT 5 When low, the data in the latches follow the data on the latch inputs.
When high, the data in the latches are held constant and are unaffected by
new data on the latch inputs.
LATCH DATA INPUTS 15,10,6,7,12 Data on these inputs are entered into the latches under the control of the
A,B,C,D,DP latch strobe input. The binary weights of the inputs are: A = 1, B = 2,
C = 4, D = 8. DP is decimal point latch data input.
LATCH OUTPUTS 4,1,2,3,14 The BCD data that drives the decoder is stored in the five latches and is
QA, OB, Oc, aD, QDP available at these outputs. The binary weights of the outputs are: OA = 1,
OB = 2, Oc = 4, aD = 8. ODP is decimal point latch output.
BLANKING INPUT 11 When low, will blank (turn off) the entire display. Must be high for normal
operation of the display.
LED TEST INPUT 13 When low, will turn on the entire display, overriding the data in the latches
and the blanking input. Must be high for normal operation of the display.
FUNCTION TABLE
LATCH INPUTS BLANKING LEO LATCH OUTPUTS DISPLAY

FUNCTION
0 C B A OP STROBE INPUT TEST 00 Oc °B 0A 00P , TIL308 TIL309
0 L L L L L L H H L L L L L
1/
0
,,
U
1 L L L H H L H H L L L H H ,,
-,
•
2 L L H L L L H H L L H L L C 2
3 L L H H H L H H L L H H H
-,
-::1 :3
4 L H L L L L H H L H L L L
Lj '-I
II)
r
5 L H L H H L H H L H L H H ~ S ~
6 L H H L L L H H L H H L L Ci
,- IS i5..
7 L H H H H L H H L H H H H
-, , -I
i C
II)
8 H L L L L L H H H L L L L B B cW
9
...c:
1/ ...I
9 H L L H H L H H H L L H H ::J
1/
A H L H L L L H H H L H L L t=l II
Q)
MINUS SIGN H L H H H L H H H L H H H - - C)
C H H L L L L H H H H L L L
I-
L
I-
L ...
Qi
c:
BLANK H H L H H L H H H H L H H
C 1-
E H H H L L L H H H H H L L L C
F H H H H H L H H H H H H H
C
I ,-
C
BLANK X X X X X X L H X X X X X
LED TEST X X X X X X X L X X X X X B B
H = high level, L:=: low level, X :=: irrelevant.
DP input has arbitrarily been shown activated (high) on every other line of the table,
TEXAS • 4-19
INSTRUMENTS
TlL308, TlL308A, TlL309, TIL309A
description (continued)
The TTL MSI circuits contain the equivalent of 78 gates on a single chip. Logic inputs and outputs are completely
TTL/DTL compatible. The buffered inputs are implemented with relatively large resistors in series with the bases of the
input transistors to lower drive·current requirements to one·half of that required for a standard Series 54/74 TTL input.
Some of the additional features of these displays are as fOllows:
• Latched BCD and decimal point logic outputs provided to drive logic processors simultaneously with the
displayed data
• Minimum number of inputs required ... 4·line BCD plus decimal point
• Overriding blanking for suppressing entire display or for pulse'modulation of LED brightness
• LED test input to simultaneously turn on all display segments and decimal point
• Can be operated in a real·time mode or latched·update·only mode by use of the latch strobe input
• Displays numbers 0 thru 9 as well as A, C, E, F, or minus sign
• Can be blanked by entry of BCD 13 or by use of the blanking input
• Decimal point controlled independently with decimal-point latch
• Constant-current-source TTL-LED interface for optimum performance.
The latch outputs except GOp are active pull·up, and each one, except GOp, is capable of driving three standard
Series 54/74 loads. The LED driver outputs are designed specifically to maintain a relatively constant on·level current
of approximately seven milliamperes through each LED segment and decimal point. All inputs are diode·clamped to
minimize transmission-line effects, thereby simplifying system design. Power dissipation is typically 575 milliwatts with
all segments on.
absolute maximum ratings over operating case temperature range (unless otherwise noted)
II
Supply Voltage, VCC (See Note 1): Continuous ... , .... 5.5V
Nonrepetitiv. Peak, tw';;; 100 ms 7V
Input Voltage (See Note 1) ..... 5.5V
Operating Case Temperature Range (See Note 2) aOc to 85°C
Storage Temperature Range ...... . -25°C to 85°C
NOTES: 1. Voltage values are with respect to network ground terminal.
2. Case temperature is the surface temperature of the plastic measured directlv over the integrated circuit. Forced-air cooling may
be required to maintain this temperature.

MIN NOM MAX UNIT
r-
m Supply Voltage, Vee 4.75 5 5.25 V
C Low Logic Level
QDP 1
Normalized Fan-out from each output, N QA,QB.QC.QD 3
C (to Series 54/74 Integrated Circuits) QDP 3
iii" High Logic Level
'0 QA,QB.QC.QD 6
;- Latch Strobe Pulse Duration, tw 45 ns
<til Setup Time, tsu 60 ns
Hold Time, th 0 ns
TEXAS •
4-20 INSTRUMENTS
TIL308, TIL308A, TlL309, TIL309A
operating characteristics at 25° e case temperature

Figure f3 700 1200
Iv Luminous Intensity (See Note 3) Vee = 5 V !,cd
!Oecimal Point 40 70
AP Wavelength at Peak Emission Vee=5V, See Note 4 660 nrn
!>A Spectral Bandwidth Vee- 5V , See Note4 20 nrn
VIH High~Level I nput Voltage 2 V
VIL Low-Level Input Voltage O.S V
VIK Input Clamp Voltage Vee = 4.75 V, II = -12 rnA -1.5 V
aop Vee = 4.75 V, 10H = -120!'A
VOH High-Level Output Voltage 2.4 V
aA, as, ae, aD Vee -4.75 V, 10H - -240 I'A
aDP Vee =4.75 V, 10L -1.6rnA
VOL Low-Level Output Voltage (See Note 5) 0.4 V
aA, as, ae, aD Vee - 4.75 V, 10L 4.8 rnA
II Input Current at Maximum Input Voltage Vee = 5.25 V, VI = 5.5 V 1 rnA
IIH High-Level Input Current Vee =5.25V, VI-2.4V 20 I'A
IlL Low-Level Input Current Vee -5.25V, VI-O.4V -{I.S rnA
laA, aB, ae, aD -9 -27.5
lOS Short-Circuit Output Current Vee = 5.25 V rnA
laDP -1 -3.2
ICC Supply Current Vee=5.25V, All Inputs at 0 V 1 i5 180 rnA
t All typical values are at Vee = 5 V.

NOTES: 3. Luminous intensity is measured with a light sensor and filter combination that approximates the CIE (International Commission
on 'liumination) eye-response curve.
4, These parameters are measured with all LED segments and the decimal point on.
6, This parameter is measured with the display blanked.
II
switching characteristics, Vee = 5 V, Te = 25°e
FROM (INPUT) TO (OUTPUT) TEST CONDITIONS MIN
TYP MAX
A,B,e,D,DP
eL=15pF,
See Figure 1
RL = 1.2 kfl,
r-----~7~~----~--~ ~
tpLH - Propagation delay time, low-to·high-Ievel output
en
tpHL;;;;: Propagation delay time, high-to-Iow-Ievel output
>
CO
i5.
en
i5
C
W
OUTPUT Vee ...I
....s::
l~h
Q)
FROM OUTPUT .2l
1
UNDER TEST
Q;
~ eL= 15pF
....s::
NOTES: A. CL includes probe and jig

capacitance.
B. All diodes are 1 N3064.
C, Measurements made with
latch strobe input grounded.
LOAD CIRCUIT-FIGURE 1
TEXAS •
4-21
INSTRUMENTS
TIL308. TIL308A. TIL309. TIL309A
RELATIVE SPECTRAL CHARACTERISTICS

1.0
0.9
VCC ~ 5V ( '\
TC~ 25°C
?; 0.8
'in
c: 0.7
j
0.6
!I
0
c: 0.5
'E
:::l
..J 0.4
.,.
.!l 0.3 \
a;
a: 0.2 / \
0.1
V \
/
o
600 620 640
X-Wavelength-nm
660 680 "" 700
FIGURE 2
•
S"
r+
u
0",
N
"u
4
-VCC
I
~
I
5V
vs
CASE TEMPERATURE
--
CD J-
cO" ..
1;;
:::l
2
CD
:J
Cii
>
.....
r--
- --
r+ 0
..,
r-
m
C
..
>
a;
a:
0.7
0.4
?;
C
.....c:
'in
iii"
"0
iii" .
.!:
:::l
0.2
<tn 0
c:
'E
:::l 0.1
..J
o 10 20 30 40 50 60 70
Tc-Case Temperature-oC
FIGURE 3
4-22 TEXAS . .
INSTRUMENTS
POST OFFICE aox 665303 • DALLAS, TEXAS 7628&
TIL311. TlL311A
HEXADECIMAL DISPLAY WITH LOGIC
D 1176. MARCH 1972 - REVISED APRIL 1987
SOLID-STATE HEXADECIMAL DISPLAY WITH

INTEGRAL TTL CIRCUIT TO ACCEPT,
STORE, AND DISPLAY 4-BIT BINARY DATA
• 7,62-mm (O.300-lnchl • Wide Viewing Angle

Character Height
• Internal TTL MSI Chip with Latch, Decoder, and Driver
• High Brightness
• Operates from 5-Volt Supply
• Left-and-Right-Hand Decimals
• Constant-Current Drive for Hexadecimal Characters
• Separate LED and Logic Power • Easy System Interface
Supplies May Be Used
mechanical data
body for the TIL311 or a red plastic cap for the TIL311A. Multiple displays may be mounted on 11,43-mm
(0.450-inch) centers.
fiOFPIN 1
1,78(0.070)
Ii OFPIN 1
19,31 (0.760)
18,29(0.120)
2.54 (0.100) TP
12 PLACES
(Sae Note d)
II
>
II)
ca
C.
II)
2,16(0.085) MAX C
PIN
PIN
1
2
LED SUPPLY VOLTAGE
LATCH DATA INPUT B
cW
-
PIN 3 LATCH DATA INPUT A ...J
PIN 4 LEFT DECIMAL POINT CATHODE
PIN 5 LATCH STROBE INPUT
I:
PIN 6 OMITTED Q)
.~
PIN 7 COMMON GROUND
-
PIN 8 BLANKING INPUT
PIN 9 OMITTED Q)
PIN 10 RIGHT DECIMAL POINT CATHODE
PIN 11 OMITTED I:
PIN 12 LATCH DATA INPUT D
PIN 13 LATCH DATA INPUT C
PIN 14 LOGIC SUPPLY VOLTAGE. VCC
NO'TES: a. All linear dimensions are in millimeters and parenthetically in inches,
b. Lead dimensions are not controiled above the seating plane.
c. Center lines of character seqments and decimal points are shown as dashed lines. Associated
dimensions are nominal.
d. The true-position pin spacing is 2,54 mm (0.100 inch) between center lines. Each centerline is
located within 0,26 mm (0.010 inch) of its true longitudinal position relaTive to pins 1 and 14.
e,l On TI L311 A devices, the 3 mold indentations are nOT presenT,
PRODUCTION DATA documents conllin information Copyright © 1982. Texas Instruments Incorporated
specifications par the terms of Texi. Instruments TEXAS . "
=~=i;·i~:I~1J.i ~::\::i:r :'io;.e;:::t::'snot INSTRUMENTS 4-23
TILl11, TIL311A
description
This hexadecimal display contains a four-bit latch, decoder, driver, and 4 X 7 light-emitting-diode (LED) character with
two externally-driven decimal points in a 14-pin package. A description of the functions of the inputs of this device
follows.
FUNCTION PINNO. DESCRIPTION

LATCH STROBE INPUT 5 When low, the data in the latches follow the data on the latch data inputs.
When high, the data in the latches will not change. If the display is blanked
and then restored while the enable input is high, the previous character
will again be displayed.
BLANKING INPUT 8 When high, the display is blanked regardless of the levels of the other
inputs. When low, a character is displayed as determined by the data in the
latches. The blanking input may be pulsed for intensity modulation.
LATCH DATA INPUTS 3,2,13,12 Data on these inputs are entered into the latches when the enable input is
(A,B,C, D) low. The binary weights of these inputs are A = 1, B = 2, C = 4, D = 8.
DECIMAL POINT 4,10 These LEDs are not connected to the logic chip. If a decimal point is used,
CATHODES an external resistor or other current-limiting mechanism must be connect-
ed in series with it.
LED SUPPLY This connection permits the user to save on regulated V CC current by
using a separate LED supply, or it may be externally connected to the
logic supply (VCe!.
LOGIC SUPPLY (VCe! 14 Separate VCC connection for the logic chip.
COMMON GROUND 7 This is the negative terminal for all logic and LED currents except for the
II decimal points.
The LED driver outputs are designed to maintain a relatively constant on-level current of approximately five
milliamperes through each of the LED's forming the hexadecimal character. This current is virtually independent of the
....
::::I
CD
LED supply voltage within the recommended operating conditions. Drive current varies slightly with changes in logic
supply voltage resulting in a change in luminous intensity as shown in Figure 2. This change will not be noticeable to
the eye. The decimal point anodes are connected to the LED supply; the cathodes are connected to external pins. Since
cC' there is no current limiting built into the decimal point circuits, this must be provided externally if the decimal points
CD
....
::::I are used.
r- The resultant displays for the values of the binary data in the latches are as shown below.
m
o
o
iii'
'C
ii'
-<
··..·· ···• ...... . ..... ·· ·.... ..... .·..•• ....· ·....· .......· .·.....· ...
·• ·· .... ... ... .•. .... ....
· · ·· ·· ·· ...
· ·
til
. · . · ·
...
·.. ·
o
·· .... ... · ·· ... ·.. · ·.. · .. · ·· ·· ...· · ·... ·...· ....
2 3
·
4 5 6 8 9 10 11
· ··
12 13 14 15
4-24 TEXAS .."

INSTRUMENlS
TlL311. TIL311A

LED
SUPPt. v
lATCH B
DATA { 4-81T
INPUTS : LATCH
LATCH
STROBE
INPUT
LEFT RIGHT
II
DECIMAL DECIMAL
POINT POINT
CATHODE CATHODE
absolute maximum ratings over operating case temperature range (unless otherwise noted) (/)
Logic Supply Voltage, VCC (See Note 1) 7V

>
CO
LED Supply Voltage (See Note 1) 7V Q.
Input Voltage (Pins 2, 3, 5, 8, 12, 13; See Note 1) 5.5V .~
Decimal Point Current 20mA c
O°C to 85°C
Operating Case Temperature Range (See Note 2)
Storage Temperature Range ...... . -25°C to 85°C cW
NOTES: 1. Voltage values are with respect to common ground terminal. ....I
2. Case temperature is the surface temperature of the plastic measured directly over the integrated circuit. Forced-air cooling may
be required to maintain this temperature.
MIN NOM MAX UNIT
Logic Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5 5 5.5 V
LED Supply Voltage, VLED . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 5 5.5 V
Decimal Point Current, IF (DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 mA
Latch Strobe Pulse Duration, tw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 ns
Setup Time, tsu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 ns
Hold Time, th . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 ns
TEXAS • 4-25
INSTRUMENTS
TlL311, TIL311A
operating characteristics at 25°C case temperature
I
PARAMETER TEST CONOITIONS MIN TYP MAX UNIT
Average Per Vce=5V, VLEO= 5V,
35 100 ,",cd
'v Luminous I ntensity (See Note 3) Character LE D See Note 4
IEach decimal 35 100
IF(OP) = 5 mA "cd
Ap Wavelength at Peak Emission Vee=5V, VLEO=5V, 660 nm
!>.A Spectral Bandwidth IF(OP) = 5 mA, See Note 5 20 nm
VIH High~Level Input Voltage 2 V
V,L Low-Level Input Voltage 0.8 V
'vIK Input Clamp Voltage Vee - 4.75 V, 11--12mA -1.5 V
I, Input Current at Maximum Input Voltage Vee= 5.5V, VI-5.5V 1 mA
I'H High-Level Input Current Vee = 5.5 V, V, = 2.4 V 40 "A
IlL Low-Level Input Current Vee = 5.5 V, VI = 0.4 V -1.6 mA
lee Logic Supply Current Vee = 5.5 V, VLEO = 5.5 V. 60 90 mA
ILEO LED Supply Current IF(OP) = 5 mA, All inputs at 0 V 45 90 mA
NOTES: 3. Luminous intensity is measured with a light sensor and filter combination that approximates the CI E (International Commission
4. This parameter is measured with {i displayed, then again with E." displayed.
5. These parameters are measw'ed with B displayed.
TTTft- -- r '\t
1.0
a.• VCC-5~
,. - -- f--
•
~
_.
] 0.7 .~
r-r-
!
~
0.6
0.5
0.4
-
r-H~
r- +- l-- \--- _. -
::s
r+
~
':;;
;j1 0.2
0.3
r-I-+-t·/
. \
(I)
0.1 I V \
cE'
(I)
600
I V
620 640 660
).,-Wavelength-nm
680"" 700
::s
r+ FIGURE 1
r-
m RELATIVE LUMINOUS INTENSITY REL.ATIVE L.UMINOUS INTENSITY
C L.OGIC SUPPL.Y VOLTAGE
~
CASE TEMPERATURE
~ 1.6
C VLED= 5V
iii' e 1.4 TC"" 2SoC - Vee = 5 V -1--+-+--+---1
"C
>
IV 1. 2
2 - f - - -- -~r--~- --
Dr l- I- i-
-<
CIl
~
$
~
1
0.8 I- I- -- 1 i""-t--
S 0.7 - - - - - .
I
I a6
1
> 0.4 f--- - - -
J o. 6
0.2
I-- -
r--
+--+--1-- ~---
~ o. 2 ~
] a ! 0.1 '---'-_,"---'-_-'---'_-"--..J
4.5 5.5 a 10 20 30 40 50 60 70
Vee-Logic Supply Voltage-V Tc-Case Temperature-"e
FIGURE 2 FIGURE 3
4-26 TEXAS
INSTRUMENTS
.Jf
Infrared Emitters and Phototransistors
5-1
::::I
.........
...
Q)
CD
c..
m
3
;:::j..
r+
...VI
CD
Q)
::::I
c..
"'tI
:s-
or+
or+
...
Q)
::::I
....
VI
VI
r+
o
...
VI
5-2
1N5722 THRU 1N5725
N-P-N PLANAR SILICON PHOTOTRANSISTORS
MARCH 1972-REVISED APRIL 198;
JEDEC-REGISTERED VERSIONS OF TIL601 THRU TIL604

• Recommended for Application in Character Recognition, Tape and Card
Readers, Velocity Indicators, and Encoders
• Unique Package Design Allows for Assembly into Printed Circuit Boards
*mechanical data
0,483 (0.0191
0,228.,009)
-rr
1,550 (0.061) DIA
{COLLECTOR
'W l
,'._< r"·
I~ 2.mID.DB2)
9··
a . -- 100'0'000'1
en
...
~
o
en
-iii
c
as
...o
~
11 ...o
1,473 (0.058) 2.133 r0841
~
EMITTER
~ 0,610 (0.024)
---l
:--~'235ID'D~~ f--
1,702 (0.067)
1,600 (0.063) _ ~.254 (0.010)
0406(0016)
.c
0,127(0.005) D..
2,083 (0.082)
"'C
r---- ;:~~~ :~: ~~~t --- FOUR TIMES c:::
as
ACTUAL SIZE
ALL DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES en
......
~
Q)
*absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . .
'E
w
50V
Emitter-Collector Voltage . . . . . . . . . . . . . . . . . . . . . 7V "'C
Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 1) 50mW Q)
~
Operating Case Temperature Range -65°C to 125°C as
Storage Temperature Range
Soldering Temperature (10 seconds) .
-65°C to 150°C ~
240°C C
....
*electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS TYPE MIN TYP MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage Ie = 100/lA, Ee= 0 ALL 50 V
V(BR)ECO Emitter-Collector Breakdown Voltage IE = 100 /lA, Ee - 0 ALL 7 V
VCE=30V, Ee = 0 ALL 25 nA
10 Dark Current VeE-30V, Ee - 0,
ALL 1 /lA
TC = 100°C
lN5722 0.5 3
VCE=5V, Ee = 20 mW/cm 2 , lN5723 2 5
IL Light Current mA
See Note 2 lN5724 4 8
lN5725 7
IC = 0.4 mA, Ee = 20 mW/cm 2 ,
veE (sat) Collector-Emitter Saturation Voltage ALL 0.15 V
See Note 2
NOTES: 1. Derate linearly to 125°C at the rate of 0.5 mwl'c.

2. Irradiance (Eel is the radiant power per unit area incident upon a surface. For this measurement the source is an unfiltered
tungsten linear-filament lamp operating at a color temperature of 2870 K.
*JEOEC registered data. This data sheet contains all applicable JEDEC registered data in effect at the time of publication.
:'~::~~i~ai~:1~1e ~!=i~~i:f :llo::~:~~:~~s not TEXAS . " 5-3
INSTRUMENTS
1N5722 THRU 1N5725
*switching characteristics at 25° C case temperature

TEST CONDITIONS
VCC = 30 V, IL = 800/JA,
R L = 1 kll, See Figure 1

See Note a
5'
....
... " 0.8 V
...
C»
~------"-o() See Note b
OUTPUT 90%
CD
Q. II
m I
I
3 I
I
I
=
CD
Ul
C»
TEST CIRCUIT
o
-tr~
T---
OUTPUT VOLTAGE WAVEFORM

-1-----
t - - ~ .....
::s FIGURE 1
Q.
"'tI NOTES: Input irradiance is supplied by a pulsed xenon bulb source. Incident irradiation is adjusted for I L :::; 800 p,A.
::s-
...
O b. Output waveform is monitored on an oscilloscope with the following characteristics: tr:e;;; 25 ns, Rin ~ 1 MO, Cin :e;;; 20 pF.
...o0; • JED E C registered data
::s TYPICAL CHARACTERISTICS

en
...
iii'
o
...
en
RELATIVE OUTPUT NORMALIZED LIGHT CURRENT
CASE TEMPERATURE OF SOURCE AND SENSOR ANGULAR DISPLACEMENT
• 1.2
•
• 1.00
.:'
I
/
i
~
• OB
i•
1.0 f-.
/
./ t- J
~
i
0.7 5
.
~
\
O·'MM. !
O. 0.50
'1-:1 SOURCE:
TIl.23 o. TIL24
- SENSOR:
1N5122-1N5725
0.' r- IF m50mA
I I I
-VCE~5V
I I I
J 0.2
•
0
0.2
O. I '---,'--,'-......L.W.1.U._.............L..LJ>LJ... o o0 I
0.01 0.02 0.04 0.07 0.' 0.2 0.4 -76 -60 -25 0 2S 60 75 100 125 50" 4(/J ~ 2rJl ,rfl rJl 100 2fIl 3IJ0 400 saO
Oi.tanceBetweenLenael_tn TC-c-T.rnpenr11.I",ofSuul'Oll.ndS~oC 8-Angur.. Displacement
FIGURE2 FIGURE 3 FIGURE 4
5-4 TEXAS . "

INSTRUMENTS
1N5722 THRU 1N5725
N·P·N PLANAR SILICON PHOTOTRANSISTORS
TYPICAL CHARACTERISTICS 1N5723
COLLECTOR CURRENT
I
2.0
_~C ~ 25°C /
Sell Note 2
/ /
I / /
I /E. 40mW/cm2
Ee ~ 60 mWlcm< /
/
//
'/ V
.b:: VE, 20mW/cm 2
.....-
0.05
VCE -Colle.:tor-Ernitter Voltoge-V
FIGURE 5
COLLECTOR.EMITTER SATURATION VOLTAGE
,
t 0.20
Ie
TC
=
w
a.S.mA
25°C
1
~ 0" 1--~1--~1--~1-----'r---I~-I
,u
40 50 60 80
E e -lrradlance-mWlcm 2
FIGURE 7
OARK CURRENT
CASE TEMPERATUAE
•~~: ::o~
>0000
, 000 -VCE~30V
I I /
Ee ~ a
!
V kl.WW
~
V O~
j
0.7
0.'
/ .~
V ! ,:\: nn'
!c
// ,o'n~
0.01
0.001 I 0.0 , I 1111111

-50 75 10 20 40 100 '000
TC-CaseTamperature- C fmod-Modulation Ffeq"ency-kH~
FIGURE 9 FIGURE 10
NOTE 2: Irradiance (Ee) is the radiant power per unit area incident upon a surface. For this measurement the source is an unfiltered tungsten
linear-filament lamp operating at a color temperature of 2870 K.
TEXAS . " 5-5

INSTRUMENTS
1N5722 THRU 1N5725
1.2~------'-------~------~------~------~------~~------r-------~------'
Output of Tungsten
Response of Human Eve Source at 2870 K
~ 1·°r-------t-----~j_~~~j_----_1------_±~~~,,~----~-=~::~------i
.......
5' :>
a
...
Q)
C1I
6~ O.B~------~------~--~~~----~~----~~----~4_~~_+------~------~
Co
m
I
~ 0.6~------~-------1+-----~U_~----_+~~----~----_/~~--~\t--------~----~
...... i
2,
~ 0.4~------~------~~----~--~--~~_+-------
...
C1I
en
.~
10
~ 0.2~------~----~~------~~~~--_+--------~--~--~--+_--_+--~~--~----~
Q)
::l
Co O~~~~'_ __ ~~ ______ ~ ____ ~L_ ____ ~ __ ~~~ __ ~ __ ~ _ _ _ _ _ _D __ _ _ _ ~
""a
:::r 0.3 0.4 0.5 0.6 0.7 O.B 0.9 1.0 1.1 1.2
...
o A- Wavelength - J.Im
......
o
Q) FIGURE 11
::l
en
...o
(ii'
TEXAS INSTRUMENTS CUSTOMIZED OPTOELECTRONIC ARRAYS
...
en The 1 N5722 through 1 N5725 series is available mounted in printed circuit boards for custom-designed array or matrix
applications. The array is a complete unit, without the problems associated with small, difficult-to-handle components.
These arrays can be designed for punched-card or tape readers, position indicators, pattern and character recognition,
shaft encoders, and many other special applications.
Texas Instruments custom·array techniques offer many advantages:

• The arrays are pre-assembled and tested, ready for installation.
• Custom arrays ",an be manufactured in almost any configuration to allow maximum design flexibility.
• Sensitivity across an entire array will be matched to within 50%.
• GaAs sources can be furnished to give complete solid-state matched sets for specific applications.
• Arrays with components firmly soldered into place on both sides of a printed circuit board are more
rugged than individually wired sensing devices.
Specifying optoelectronic arrays is easy; all that is required is a print of the array and the desired specifications.
TI sales engineers will assist in developing specifications for special applications.
TEXAS . "
INSTRUMENTS
5-6 POST OFFICE BOX 655303 • DALLAS. TEXAS 75265
TIL23, TIL24, TlL25
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES
D2132, FEBRUARY 1970-REVISED APRIL 1987
DESIGNED TO EMIT NEAR-INFRARED

RADIATION WHEN FORWARD BIASED
• Output Spectrally Compatible with Silicon Sensors

• High Power Efficiency
•
•
•
High Power Output
Small Size Permits Matrix Assembly Directly into Printed Circuit Boards
High Radiant Intensity
....o
U)
U)
'iii
• TlL24HR2* Includes High-Reliability Processing and Lot Acceptance
..
c
as
mechanical data
(Refer to TIl24HR2 for Summary of Processing)
..
o
o
.c:
Q.
"C
C
as
~
2,337 (0092)
~
(5~'~~:~'::IRAD
....
U)
II)
.'!::
·~--YHV
T"": 2--cA.THODE E
O.49(00191~ \-~ W
'-ANODE
...5.....
0,23 (0.0091 0,406 (0.016)
"C
3,43 (0.135)
II)
3,10(0.122)
as
4 TIMES
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES ACTUAL SIZE
absolute maximum ratings

II
Reverse Voltage at 25°C Case Temperature """'" 2V
Continuous Forward Current at 25°C Case Temperature (See Note 1) , , , 100mA
Operating Case Temperature Range -65°C to 125°C
Soldering Temperature (10 seconds) , 240°C
* All electrical and mechanical specifications for the TI L24 also apply for TI L24HR2.
NOTE 1: Derate linearly to 125°C case temperature at the rate of 1 rnA/C. For lJulsed operatiC.ln at higher currents, 5t:=e Figures 8 and 9.
current 8S of publication data. Products conform to
Instruments
specifications per the terms of Texas
:~~~~:~~i~at::1~1e ~:~:~ti:r :I~O:::~:':~~ not TEXAS ~ 5-7
INSTRUMENTS
TIL23, TIL24, TIL25
P·N GALLIUM ARSENIDE INFRARED· EMITTING DIODES
operating characteristics at 25° C case temperature

TIL23 TIL24 TIL25
Po Radiant Power Output 0.4 1 0.75 mW
-.......
::::I
8HI
I<.p
Ill<.
Wa\(elength at Peak Emission
Spectral Bandwidth
Half~lntensity Beam A~
IF=50mA
940
50
35'
940
50
35'
940
50
35'
nm
nm
...
Dl
CD
VF Static Forward Voltage 1.25 1.5 1.5 1.5 V
0-
m
3
;::+"
r+
...
CD
(II
Dl
::::I
0- TYPICAL CHARACTERISTICS
"tI
::::I"
or+ RELATIVE SPECTRAL CHARACTERISTICS
o
...Dl
r+ 1.2r-------~------~------_,--------~------~------~------_T------~------~
::::I
(II
fij"
r+
,
,
S-
1.0 t_----i---:..:.::.:'T=.,.~=T.c.:...---t_---_t::::;;;:;;; ....~*~:l- .. Output of Tungsten
_F;;;;;;,;S~o~urce at 2870 K
...o
(II
o
5 0.8~---~----~~--~~---~~---~~---~+-~~-+----~r----4
ill~
~
~ 0.6 ~-------+--------HL------~~~----r-7'-----r--------~--t-~rl-------~------~
E
~
~ 0.4 ~---~----It--~L--Hr--7'-t-------t-
~
.~
0;
oc 0.2 ~-----t--~~~---~~'-~--t-------t-----l-+---\-1--~
0L--c~ __ ~ ____ ~~ ______ ~ ____ ~~ ______ ~ ____ L-~ ____ ~~ ______ ~ ____ ~
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
X-Wavelength-J.lm
FIGURE 1
5-8 TEXAS . "

INSTRUMENTS
TlL23, TIL24, TIL25
P·N GALLIUM ARSENIDE INFRARED·EMITTING DIODES
RELATIVE PHOTON INTENSITY RELATIVE POWER OUTPUT

vs vs
ANGULAR DISPLACEMENT CASE TEMPERATURE
1.2
.....
1.0 -~---
.~c 0.8 -~--

V '\ ++
:;
0.7
en
o
en
~c~ 1\
] B-
o .Ci)
.....o
c
£0 0.6 - -
~
c
ctI
\\
.c
~
§b!ftftll=
0.
">
.~
'a:"
0.4 - - - -----1---
I
I
'~" .~
'" 0.07
a: 0.1
...o
!
0-
0 .c
0.2 J -.~
0..
/ \ O.OLI----+-+-~+---t-_+ "C
C
20° 10·
6-Angular Displacement
0° 10' 30· -75 -50 -25 0 25 50
T C-Case Temperature-OC
75 100 125
.
ctI
en
...
CI)
.t::
FIGURE 2 fiGURE 3
E
w
...
"C
--
CHANGE IN WAVELENGTH OF PEAK INTENSITY RELATIVE POWER OUTPUT CI)
vs vs ctI
E CASE TEMPERATURE FORWARD CURRENT
c
I .- ._- C
() 30 10
0
to
N
IF = constant
/ TC 25°C
~L
" See Note 2
I-
C)
1ii
20 1---- r- -- -
V -
4
./
~
"
~
10 I----- -~--
---
bL -
+;:.
~
B-
~
2
/
.g
"'"
E
0
V 1---- -
0
~
0
~
C)
.c
V 0.
.~ 0.7
1ii
~
'~"
-10
t/ '"
a: 0.4 /
I
-20 - - ~~- ~ ~
.-
0.2
/
'"<I
Co
V
-30 0.1
-75 -50 -25 0 25 50 75 100 125 10 20 40 70 100 200 400 1000
T C-Case Temperature-OC IF-Forward Current-rnA
FIGURE 4 FIGURE 5
NOTE 2: These parameters must be measured using pulse techniques: tw"" 0.04 ms. duty cycle ~ 10%.
+Normalized to output at IF "" 50 mA, TC "" 25°C.
TEXAS . " 5-9

INSTRUMENTS
TIL23, TIL24, TIL25
P·N GALLIUM ARSENIDE INFRARED·EMITTING DIODES
TIL23 COUPLING CHARACTERISTICS OF TI L23. TIL24. AND

FORWARD CONDUCTION CHARACTERISTICS TlL25 WITH TIL602
10\1 100
See Note 2 70 SOURCE: SENSOR:
90 f---, f==TIL25 TIL23. TIL602
40
I TIL24. VCE - 2 V
......5'
.. 1
AI
80
70 -,~-
- -" -
:T~~lwcl I I
I I
I
«
E
20
10
~-.
rnL23
;::: :::::::::
TIL25
IF~50mA
TC ~ 25°'C
TC ~ 25°C
CD ~ 60 - r--'---- ,- - ...c 7
Q. u
~
50
___ ,1 I I ~
~
4
m 'E
3 ~ 40 I J fTc ~ -55°C
u
5
e
2
" \\1\.
/ ~ / I
0
::+
r+
LL
I 0
~
1
_LL 30 0.7
CD
Cil 20
V II ~Tcl~25°C 0.4
AI 10
I I I '1 0.2
::::I
Q. 0
V ./ / 0.1
1\
0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.01 0.02 0.04 0.070.1 0.2 0.4 0.7 1
"'0
::r VF-Forward Voltage-V Distance Between Lenses-in
or+
.
or+
AI
::::I
FIGURE 6
NOTE 2: These parameters must be measured using pulse techniques: tw = 0.04 ms, duty cycle.s;;; 10%.
FIGURE 7
en THERMAL CHARACTERISTICS
ur
..
r+
o
en
MAXIMUM PULSE WIDTH
YS
MAXIMUM DUTY CYCLE
VS
FORWARD CURRENT FORWARD CURRENT
II 10
7
4
1\
T C ~ 25°C
100
90
80
70
60
_\.
\.
'\
i
I
TC ~ 25°C
2
*I \
E \ ">
13 50
I
-6
:!! 0.7 -"
U
~ 40
\
~ r-- ~
III 0.4 0
E \
...:; -....... 30
\
~
0.2 E
E
~
~ .~
E 0.1 i'.. :;:
.
'x 20
:;: 0.07
0.04
0.02 ,
1\
0.01
10
100 200
1\
400 700 1000
o 100 200 300 400 500
IF-Forward Current-mA I F-Forward Current-rnA
FIGURE 8 FIGURE 9
TEXAS •
5·10 INSTRUMENTS
TIL24HR2
HIGH-RELIABILITY PROCESSING AND LOT ACCEPTANCE
• This processing applies only to devices ordered under the part number TIL24HR2
• For electrical and mechanical specifications, refer to TIL24 data sheet
This processing and lot acceptance follow the sequence of tests in MIL-S-19500 for JANTX types. This is not to
be construed to be a JANTX-qualified part. A detail specification is available upon request through your TI Field Sales
Office, local authorized TI distributor, or by writing directly to:
P.O. Box 809066
.
tI)
...
o
tI)
'iii
.....
r::::
MIL-STD-750 ctI
TEST
TEST METHOD
100% Processing
...oo
Storage: TA ~ 125°C, t ~ 24 h 1032
.t:.
tL
Temperature Cycle: - 55°C to 125°C, 10 cycles 1051
Constant Acceleration: 20,000 G, Y 1 axis 2006 "C
r::::
..
Power Burn-in: IF = 50 rnA, t = 168 h 1039 ctI
Hermetic Seal, Fine 1071 Condo G or H tI)
Hermetic Seal, Gross
External Visual
1071 Condo Cor D
2071 ...
CI)
,,!::
Product Acceptance
E
Group A: LTPD ~ 5
w
..
External Visual 2071
Electrical: TA ~ 25°C per detail spec
"C
.....
CI)
Group B-1: LTPD ~ 15 ctI
Solderability 2026
Group B-2: LTPD ~ 10
r::::
Thermal Shock 1051 Condo B-1
Hermetic Seal, Fine 1071 Condo G or H
Hermetic Seal, Gross 1071 Condo C or D
Group B-3: LTPD ~ 5
Steady-State Operating Life: t ~ 340 h 1027
Group B-4:
Oecap, Internal Visual; Design Verification
1 Devlce/O Failure 2075
Bond Strength LTPD ~ 20 IC ~ 0) 2037 Condo A
Group B-5: Not Applicable
Group B-6: LTPD ~ 7
High-Temperature Life (Nonoperating) 1032
t ~ 340 h
TEXAS • 5-11
INSTRUMENTS
T1L24HR2
MIL-STO-750
TEST
TEST METHOD
(Group C Tests are run on one lot every six months)
Group C-l: LTPO = 15

Physical Dimensions 2066
....
5'
.... Thermal Shock IGlass Strain) 1056 Condo A
Hermetic Seal. Fine 1071 Condo G or H
m Hermetic Seal, Gross 1071 Condo C or 0
CD Moisture Resistance 1021
Q.
External Visual 2071
m Group C-3: LTPD = '0
3 Shock: 1 500 G 2016
....
;::;'"
..
CD
(I)
Vibration: 50 G
Acceleration: 2000 G IX,. y,. y 2 axis)

2056
2006
m Salt Atmosphere 1041

::l
Q. Group C-5: Not Applicable
." Group C-6: A = 10
::r
....oo Steady-State Operating Life: t = 1000 h 1026
..
....
m
::l
(I)
tir
.....
o
(I)
5-12 TEXAS . "

INSTRUMENTS
TIL131 THRU TIL133
9-ELEMENT ARRAYS AND 9-CHANNEL PAIR
SEPTEMBER 1971-REVISEDSEPTEMBER 1989
TIL131 •.• 9-ELEMENT GALLIUM ARSENIDE IRED ARRAY

TIL132 ... 9-ELEMENT PHOTOTRANSISTOR ARRAY
TIL133 •.. 9-CHANNEL PAIR
• Center-to-Center Spacing of 2,54 mm (0.100 inch) for Tape Reading

• Reliable Solid-State Components
• IREDs Eliminate Lamp-Filament-Sag Problems ...
en
• Spectrally Matched for Improved Performance ...en
o
• Printed Circuit Board Construction Allows Precise Alignment ';
C
description
......o
CO
The TIL 131 is an array of nine TIL23 gallium arsenide infrared-emitting diodes mounted in a printed circuit board.
The TIL 132 is an array of nine selected LS600 phototransistors. The TIL133 is a pair of selected arrays ...o
comprising a TIL131 and TIL132 and offering specified channel performance. ..c
a..
mechanical data
"C
The printed circuit board material is glass-base NEMA standard FR-4, class II, O.6-kg/m 2 (2-0z/ft2) copper-clad C
on each side. The approximate weight ofthe TIL131 and TIL132 is 3.7 grams each. CO
...en
7,620 ± 0,051
(0.300 ± 0.002)
(See Note)
0.838 (0.033)
0.686 (0.027) CIA
18 WIRE HOLES
PHOTOTRANSISTORS
OR
IR·EMITTING DIODES
......
Q)
'E
w
"C
...
Q)
......CO
.E
2,540 :!:: 0,051 8 PLACES
(0.100 ± 0.002)
TOLERANCE NONACCUMULATIVE
(See Note)
5,21 (0.205)
~------- ~~:: ;g:~~) --------+1

4,95 (0.195)
~---------:~::~::~:~:~--------~
1,74 (0.0685)
1.43 (0.0565)
1.45 (0.057) 0.94 (0.037)
MAX MAX
COLLECTOR
CATHOCE~
TIL131 TIL132
SIDE VIEWS OF ACTIVE ELEMENTS

NOTE: The tolerances shown for these dimensions apply to location of the mounting holes and the active elements only. Tolerance of ± 0.13 mm
(0.005 inch) applies for location dimensions of the wire holes.
specifications. per the terms of Texas Instruments
~~~~~'!":11~1~~~~:r~ t:~~~~C:;f~11 ~~~~~:~~~. does not TEXAS
INSTRUMENlS
.Jf
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5-13
TIL131 THRU TIL133
9·ELEMENT ARRAYS AND 9·CHANNEL PAIR
TIL131 absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
Reverse voltage ............................................................................ 2 V
Continuous forward current at (or below) 25°C free-air temperature (see Note 1) ................ 100 rnA
Operating free-air temperature range .............................................. -65°C to 125°C
Soldering temperature (10 seconds) ........................ ;............................... 240°C
NOTE 1: Derate linearly to 12S·C free-air temperature at the rate of 1 mWI"C.
....
::::s
.c..
iil
CD
TIL131 operating characteristics of each element at 25°C free-air temperature range
Po
PARAMETER
Radiant power output
TEST CONDITIONS MIN
0.4
TYP MAX
1
UNIT
mW
m )..p Wavelength at peak emission 930 nm
3
;:;:
1':.)" Spectral bandwidth 'F = 50 mA 50 nm
.. BHI Half-intensity beam angle 35·

r+
CD VF Static forward voltage 1.25 1.5 V
en
Dl TIL 132 absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
::::s Collector-emitter voltage ................................................................... 50 V
c.. Emitter-collector voltage ..................................................................... 7 V
"0 Continuous device dissipation at (or below) 25°C free-air temperature (see Note 2) .............. 50 mW
::r
or+ Operating free-air temperature range .............................................. -65°C to 125°C
..
o
r+
Dl
::::s
Storage temperature range ..... :................................................. -65°C to 150°C
Soldering temperature (10 seconds) ........................................................ 240°C
NOTE 2: Derate linearly to 125·C free-air temperature at the rate of 0.5 mW/·C.
en
.
[
o
en
TIL 132 electrical characteristics at 25°C free-air temperature
individual element characteristics
V BRlCEO Collector-emitter breakdown voltage Ic = 100 !lAo E. = 0 50 V
VIBRlECO Emitter-collector breakdown voltage 'E = 100 ~A. Ee= 0 7 V
ID Dark current V cE =30V, E.= a 100 nA
IL Light current V cE =5V, E. = 20 mW/cm2 , See Note 3 2 12 mA
VeE sat Collector-emitter saturation voltage Ie = 0.4 mA, E. = 20 mW/em 2 , See Note 3 0.15 V
element matching characteristics

Light current matching factor V CE =5V, E. = 20 mW/cm 2 , See Note 3 0.5
NOTE 3: Irradiance (Eel is the radiant power per unit area incident upon a surface. For this measurement, the source is an unfiltered tungsten
TEXAS ."
INSlRUMENTS
TIL131 THRU TIL133
Maximum ratings ofTlL131 and TIL132 apply.
TIL133 electrical characteristics at 25°C free~air temperature

PARAMETER TEST CONDITIONS! MIN TYP MAX
Ic Output collector current IF = 50 mA, 2.5 4 10
VCE sat Collector-emitter saturation voltage IF = 50 mA, IC=2mA 0.4 0.7
~
TIL 133 switching characteristics at 25°C free-air temperature
PARAMETER TEST CONDITIONS! MIN TYP MAX
...o
II)
t, Rise time Vcc =5 V, IC(on) = 2 rnA, 1.5

"iii
r::::
t
tf Fall time RL = 100 a,
These parameters are measured at a lens-to-Iens distance of 0.1 00 inch.
See Figure 1 1.5
......
CO
...oo
PARAMETER MEASUREMENT INFORMATION .r::::
Q.
"C
~
47a
INPUT ADJUST AMPLITUDE OF INPUT PULSE r::::
(See Note A) FOR IC(ON) = 2 mA CO
L ...
II)
INPUT 0 - 1
...
Q)
"~
OUTPUT E
(See Note B) w
Vcc=5V RL =100a 90% 90%
"C
OUTPUT
...CO
-
Q)
...
r::::
~
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Zout = 50 a, t, s 15 ns, duty cycle 1%, tw = 100 ~s. ~
B. The output waveform is monitored on an oscilloscope with the following characteristics: t, s 12 ns, R;n ~ 1 Ma, C;n s 20 pF. ~
TEXAS ..,
INSJRUMENlS
TIL131 THRU TIL133
TIL133 TIL131
COUPLING CHARACTERISTICS FORWARD CONDUCTION CHARACTERISTICS
10 100
.S: See ~ote 4
0 90
0
~
ci
4
TA = ro
I °
C
..-.1 I I
-......
I-- 80
iii «
::s
2
E / / /
-r
Q)
:::J I 70
Q) ~
B 0.7
1
E
~:::J 60
TA=25°C
'/ 1
~
c..
Q)
.::
0.4
U l 1 :...1
m
iii
Qj 0.2
"' .2:
'E
50
TA = _55°C -r- I /
3
;:+
r+
-
a:
c:
~
:;
0.1
1\ 0
"-
I
u.
40
30
/
I
/ /
I
...
~ u 0.04 ~SOURCE: r- SENSO : - 20
til :; ~ IF=50mA r- VCc=5V - I / I
Q)
::s
c.
:;
0
0.02
0.01
-TA riI 25 C r- T A i25°[C [- 10
o V / /
c.. 0.01 0.02 0.04 0.1 0.2 0.4 0.9 1.0 1.1 1.2 .1.3 1.4 1.5
"'tJ Distance Between Lenses - in VF - Forward Voltage - V
::r
0 FIGURE 2 FIGURE 3
r+
0
...
r+
Q)
TIL131
RELATIVE POWER OUTPUT RELATIVE PHOTON INTENSITY
TIL131
::s vs vs
til FORWARD CURRENT ANGULAR DISPLACEMENT
0" 10 1.2
r+
7 ~TA = 25°C
...
0
t- See Note 4
til
/ " 1.0
+-
:;
.s-:::J
4
2
/
/ ~
'iii
c:
Q) 0.8
V '\
0
:;;
;:
0
:E
~
c:
0.6
/ 1\
.c
/ \\
Q. U)
0.7
~
Q) Q.
>
:;:::
Q)
> 0.4 0;
'" 0.4 / ~
Qj
a: Qj
IX V .2
C.
0
0.2 / 0.2 r-..
V / \.
0.1
10 20 40 100 200 400 1000
o
30° 20° 10° 0° 10° 20° 30°
I F- Forward Current - mA B- Angular Displacement
FIGURE 4 FIGURES
t Normalized to output at IF = 50 mAo Tc = 25'C.

NOTE 4: These parameters were measured using pulse techniques: tw = 0.04 ms, duty cycle ~ 10%.
TEXAS ."
INSTRUMENTS
5-16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TIL131 THRU TIL133
TIL131 TIL132
CHANGE IN WAVELENGTH OF PEAK INTENSITY NORMALIZED LIGHT CURRENT
vs vs
E FREE-AIR TEMPERATURE
c ANGULAR DISPLACEMENT
I 30
I I I
!?
'"
N
20
IF =Constant
V 1.25
..
CI)
:-" V 'T
...J
1.00
v ........
o
....
.
10
/ C
CI)
10 ~
/ 1\ 'iii
......o
"
~ :; c
E
g o V -
0
J::
0.75
II co
. ~V
01
:::i
I ....o
".!::!.
01
C 0.50
en
'x 1\
~
o
.r:
a,
-10
/
l7' iU
E
<s
7 '"
iU
u
a
-\ ..r:.
0..
"C
..
c -20 z 0.25 C
~
~
~
Co
-30
"V
-75 -50 -25 o 25 50 75 100 125 o 1

50° 40° 30° 20° 10° 0° 10° 20 0 30° 40° 50°
,
co
~
~
:::
TA -Free-Air Temperature- °c e - Angular Displacement
'E
FIGURE 6 FIGURE7 w
....
"C
~
--
TIL132
DARK CURRENT CO
vs
C
•
10000
VJE = 301V
1000 f---- E = 0
1/
100
[7
'"
c
I
[7
C 10
~
:; V
...:a
0
c 0.1
~V
I
.E'
/
V
0.Q1
V
0.001
--50 -25 o 25 50 75 100 125
FIGURES
TEXAS ."
INSlRUMENlS
.......
::l
...
II)
(1)
c..
m
3
;:j.'
r+
...
(1)
VI
II)
::l
c..
"'tJ
::T
o
r+
o
...
r+
II)
::l
VI
0'
r+
o...
VI
5-18
TIL134 THRU TIL136
12·ELEMENT ARRAYS AND 12·CHANNEL PAIR
~~"T~'''D''D 1971-REVISED SEPTEMBER 1989
TIL134 .•. 12-ELEMENT GALLIUM ARSENIDE IRED ARRAY

TIL135 ... 12-ELEMENT PHOTOTRANSISTOR ARRAY
TIL136 ... 12-CHANNEL PAIR
• Center-to-Center Spacing of 6,3 mm (0.250 inch) for Tape Reading

• Reliable Solid-State Components
• IREDs Eliminate Lamp-Filament-Sag Problems
...
U)
• Spectrally Matched for Improved Performance

...
o
U)
• Printed Circuit Board Construction Allows Precise Alignment
'eI:n
description
...o...ca
The TIL 134 is an array of twelve TIL23 gallium arsenide infrared-emitting diodes mounted in a printed circuit
board. The TIL 135 is an array oftwelve selected LS600 phototransistors. The TIL136 is a pair of selected arrays
comprising a TIL 134 and TIL135 and offering specified channel performance.
...o
.s::.
mechanical data 11.
The printed circuit board material is glass-base NEMA standard FR-4, class II, O.6-kg/m 2 (2-0z/ft2) copper-clad '0
I:
on each side. The approximate weight of the TIL 134 and TIL 135 is 8.5 grams each. ca
...
U)
2,566{O.101) DIA
2,464 (0.097)
4 MOUNTING HOLES
~DIA
0,686 (0.027)
24 WIRE HOLES
...
G)
,t::
E
~~~~ ~~~~ w
:~::~::~::~: :~::~::~::~:
'0
~~~~~~~~~~
...
G)
...ca
....I:
5,21 (0.205)
4,95 (0.195)
_~j+ j •
7,671(0.302)
6,350±0,051
(0.250 ± 0.002) 11 PLACES
TOLERANCE NONACCUMULATIVE
14--......- 7,568(0.298)
M----===::..-----
(See Nole)
r:ff:: ~.=)
~-------------------
1,74 (0.0685)
1,74 (0.0685)
r
1,43 (0.0685)
1,43 (0.0685)
0,94 (0.037) 1,02 (0.040)
1,45 (0.057)
MAX MAX
MAX
CATHODE _ _ _ COLLECTOR
TILI34 nLI35
SIDE VIEWS OF ACTIVE ELEMENTS
NOTE: The tolerances shown for these dimensions apply to location of the mounting holes and the active elements only. Tolerance of ±O, 13 mm
(0.005 inch) applies for location dimensions of the wire holes.
PRODUCTION DATA documents contain Information Copyright © 1989, Texas Instruments Incorporated
~:C~~~:I1;~~~~~:re t:~~I~~C~?~1I ~~~~~~~. does not TEXAS ."
INSlRUMENlS
POST OFFICE BOX 655303 • DALLA.S, TEXAS 75265 5-19
TIL134 THRU TIL136
Reverse voltage ............................................................................ 2 V
Continuous forward current at (or below) 25°C free-air temperature (see Note 1) ................ 100 mA
Operating free-air temperature range .............................................. -65°C to 125°C
Soldering temperature (10 seconds) ............................................ : ........... 240°C
NOTE 1: Derate linearly to 12S'C free·air temperature at the rate of 1 mWrC.
5'
.
::
m
CD
Q.
TIL134 operating characteristics of each element at 25°C free-air temperature range
Po
PARAMETER
Radiant power output
TEST CONDITIONS MIN
0.4
TYP MAX
1
UNIT
mW
m
3
'".
,n
Wavelength at peak emission
Spectral bandwidth IF = 50 mA
0.93
500
I-'m
A
;::;'
.
....
CD
fI)
eHI
VF
Half·intensity beam angle
35'
1.25 1.5 V
m
~ Collector-emitter voltage ................................................................... 50 V
Q.
Emitter-collector voltage ..................................................................... 7 V
." Continuous device diSSipation at (or below) 25°C free-air temperature (see Note 2) .............. 50 mW
:J
....oo Operating free-air temperature range .............................................. -65°C to 125°C
..
....
m
~
Soldering temperature (10 seconds) ....................................... , .... , ....... , .. , 240°C
NOTE 2: Derate linearly 10 125'C free-air temperature at the rate of 0.5 mWrC.
fI)
~
o..
TIL135 electrical characteristics at 25°C free-air temperature
individual element characteristics
fI)
V[BR)eEO Collector-emitter breakdown voltage Ie = 100 JAA, Eo = 0 50 V
V BR Eeo Emitter-collector breakdown voltage IE = 100 JAA, E. = 0 7 V
10 Dark current V eE =30V, Eo = 0 100 nA
IL Light current VeE = 5 V, Ee = 20 mW/cm2 , See Note 3 2 12 mA
VeE sat Collector-emitter saturation voltage Ie = 0.4 mA, E. = 20 mW/em 2, See Note 3 0.15 V
element matching characteristics

Light current matching factor V eE =5V, E. = 20 mW/em2, See Note 3 0.5
NOTE 3: Irradiance (Eol is the radiant power per unit area incident upon a surface. For this measurement, the source is an unfiltered tungsten
TEXAS ."
INSIRUMENTS
TIL134 THRU TIL136
Maximum ratings ofTIL134 and TIL135 apply.
TIL136 electrical characteristics at 25°C free-air temperature

PARAMETER TEST CONDITIONSt MIN TYP MAX
OUlpul colleclor current IF = 50 mA, 2.5 4 10
Collector-emitter saluralion voltage IF = 50 mA, IC =2 mA 0.4 0.7
...
U)
TIL136 switching characteristics at 25°C free-air temperature

PARAMETER TEST CONDITIONSt MIN TYP MAX
...oU)
I, Rise lime VCC = 5 V, IC(on) = 2 mA, 1.5

'iii
t:
If Fall lime RL = 100 g, See Figure 1 1.5
......
(Q
t These parameters are measured al a lens-la-lens dislance of 0.1 00 inch.

...oo
..s::::
PARAMETER MEASUREMENT INFORMATION Q.
"C
INPUT AOJUST AMPLITUDE OF INPUT PULSE t:
(Q
(See Note A) FOR IC(on) = 2 rnA
...
U)
INPUT o-.J L ...
,~
Q)
OUTPUT E
(See Note B) w
RL = 100 g "C
...
-
OUTPUT Q)
• (Q
...
t:
TEST CIRCUIT VOLTAGE WAVEFORMS ,
NOTES: A. The inpulwaveform is supplied by a generator with the following characteristics: Zout = 50 g, I, ~ 15 ns, duly cycle-l%, Iw = 1001's.
B. The oUlput waveform is monilored on an oscilloscope with the following characlerislics: I, ~ 12 ns, R;n ., 1 Mg, C;n ~ 20 pF.
TEXAS ..,
INSTRUMENTS
TIL134 THRU TIL136
TIL136 TIL134
COUPLING CHARACTERISTICS FORWARD CONDUCTION CHARACTERISTICS
10 100
.5 See Note 4
g
,.. 90
4
I I I
-
c:i
I-- 80
:::s
2 c:(
E TA= 100°C / / 1
... C
I 70
/ / /
...
I»
CD
C. .~
0.7
0.4
f
5
u
60
50
TA = 25°C -r ./ --./
m
fti
Gi
a:
0.2
'\
~
! 40
TA=-55°c -I- "1 /
3
::+'
r+
C
f
0.1
1\ 0
II..
I
30
I /
I
I
...
CD 5
U 0.04 r- SO~RCE: - SENSOR: ~ 20 1/
en :;
S- 0.02
r-IF =50 mA -Vee =5V
10 J / J
I» 1?~il25°C I V /
:::s
c. o
::J
0.01
r-TAi2YCI
o /
0.01 0.02 0.04 0.1 0.2 0.4 0.9 1.0 1.1 1.2 1.3 1.4 1.5
""C Distance Between Lenses - in VF - Forward Voltage - V
:r
or+ FIGURE 2 FIGURE 3
or+
...
I» TIL134 TIL134
:::s RELATIVE POWER OUTPUT RELATIVE PHOTON INTENSITY
en vs vs
,..(ii' 10
FORWARD CURRENT
1.2
ANGULAR DISPLACEMENT
...oen 7 =TA = 25°C

- See Note 4
/ " 1.0
/
"\\
4
~
/ III
c
.! 0.8
I
2
.5
c
,I
1 ~ 0.6
/
.c III
a.
0.7
~
~
0.4 ii
/ ~
0.4
Gi
a: / a
0
C>
\
/ 0.2
\
0.2
I I \.
0.1 o
10 20 40 100 200 400 1000 30° 20° 10° 0° 10° 20°
I F- Forward Current - mA e- Angular Displacement
FIGURE 4 FIGURES
NOTE 4: These parameters were measured using pulse techniques: tw = 0.04 ms, duty cycle.: 10%.
TEXAS ."
INSTRUMENTS
5-22 POST OFFICE BOX 655303 • DALlAS, TEXAS 75265
TIL134 THRU TIL136
TIL134 TIL135
CHANGE IN WAVELENGTH OF PEAK INTENSITY NORMALIZED LIGHT CURRENT
vs vs
FREE-AIR TEMPERATURE ANGULAR DISPLACEMENT
0«
I 300 1.25
J co~stanl
U
°II>
N
"« 200
I =
// ...en
/ ....o
oJ
1.00
"T r
"1\
f-
ro / c: .~
~
'"
::l 100 ~
:; / en
I:
~
E
0
/ U
.:
Ol
0.75
I
.......o
co
::::i
I ....o
~
'"t:
Ol
-100
/V "tI
'"
.!:!
OJ
0.50
I
·x'"
«
OJ
1\
\ .J::
/ E ()
a..
U
.s::: (; a0
g, -200 / z 0.25 "'C
I:
'"
Qi / co
>
~ -300 o I ...
en
c<
Ie. -75 -50 -25 0 25 50 75 100 125 50° 40° 30° 20 0 10° 0 0 100 20 0 30° 40° 500
8 - Angular Displacement
....Q)
."!:
<I TA - Free-Air Temperature _ °C
E
FIGURE 6 FIGURE 7 w
"'C
TIL135
...
Q)
-
DARK CURRENT
vs
...co
I:
10000
V~E = 30lV /
1000 r- Ee= 0
«t:
100
/
c:
I
10
/
u
~
:; /
"'(;;"
c 0.1
/V
_0
I
/
V
0.01
V
0.001
-50 -25 o 25 50 75 100 125
TA -Free-Air Temperature- °c
FIGURE 8
TEXAS l!}
INSTRUMENTS
-......
:s
I»
CD
0-
m
3
....;::;."
...
CD
en
I»
:s
0-
"tJ
::r
o
....
o
.......
I»
:s
en
....iii"
o
...
en
II
5-24
TlL601 THRU TIL604, LS600, LS602, LS611 THRU LS619
N·P·N PLANAR SILICON PH'OTOTRANSISTORS
D1971. NOVEMBER 1974-REVISED SEPTEMBER 1989
DESIGNED FOR HIGH-DENSITY READ OUT
• Hermetically-Sealed Pill Package

• Recommended for Application in Character Recognition, Tape and Card Readers, Velocity Indicators,
and Encoders
• Unique Package Design Allows for Assembly into Printed Circuit Boards
.....
• Spectrally and Mechanically Compatible with TIL23 thru TIL25 II)
• Saturation Level Directly Compatible with Most TTL

o
II)
• TIL604HR2 t Includes High-Reliability Processing and Lot Acceptance (See TIL604HR2 for Summary "fi)
.....
of Processing) r::::
CO
mechanical data
...oo
.r::::
0..
"C
0,254 ± 0,026 RAD r::::
f
(0.010 ± 0.001)
..
CO
II)
...
1,550 (0.061) DIA
...
Q)
1,473 (0.058)
+ "e
w
1,702 (0.067) -1t-----oot
..
"C
......
Q)
1,600 (0.063)
CO
2,921 (0.115) - r::::
II
2,591 (0.102)
ALL DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES FOUR TIMES

ACTUAL SIZE
t All electrical and mechanical specifications for the TIL24 also apply for TlL24HR2.
~~~::~~i~a{::I~~e ~:ti~~ti:r :I~o::~:::::t::'s':' not INSTRUMENTS
POST OFFICE BOX 655303 .. DALLAS, TEXAS 75265
TlL601 THRU TlL604, LS600, LS602; LS611 THRU LS619
absolute maximum ratings at 25 DC case temperature (unless otherwise noted)

Collector-emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50 V
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) . . . . . . . . . 50 mW
Operating case temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 65°C to 125°C
Storage temperature range ......................................... -65°C to 150°C
Soldering temperature (10 seconds) ..........' ................................. 240°C
:::I
::: electrical characteristics at 25 DC case temperature (unless otherwise noted)
m
~ PARAMETER TEST CONDITIONS TYPE MIN TYP MAX UNIT
(1) = 100 pA,
VIBRlCEO Collector-emitter breakdown ~oltage IC Ee =0 All 50 V
Q.
VIBRlECO Emitter-collector breakdown voltage IE = 100 ~A, Ee =0 All 7 V
m VCE = 30 V, Ee =0 All 25 nA
3
;::+
10 Dark current VCE = 30 V, Ee = 0,
All 3 ~A
TC = 100°C
r+
(1) TIL601 0.5 3
~
(I) TIL602 2 5
TIL603 4 8
m
:::I TlL604 7
Q. LS600 0.8
"tI LS602 0.5
:r = 20 mW/cm2,
LS611 0.5 1 2
o
r+ IL Light current
VCE = 5 V, Ee
LS612 1 2 3 mA
See Note 2
or+ LS613 2 3 4
~ LS614 3 4 5
m LS615 4 5 6
:::I
(I) LS616 5 6 7
ui'
r+
LS617 6 7 8
o
~
LS618 7 8 9
(I)
LS619 8 9
IC = 0.4 mA, Ee = 20 mW/cm 2 ,
VCElsatl Collector-emitter saturation voltage All 0.15 V
See Note 2
NOTES: 1. Derate linearly to 125°C at the rate of 0.5 mW/oC.

2. Irradiance (Eel is the radiant power per unit area incident upon a surface. For this measurement, the source is an unfiltered
tungsten linear-filament lamp operating at a color temperature of 2870 K.
switching characteristics at 25 DC case temperature

PARAMETER TEST CONDITIONS TYP
Rise time VCC = 30 V, IL = 800 ~A, 8
Fall time RL = 1 kO, See Figure 1 6
5-26 TEXAS ~
INSTRUMENTS
TIL601 THRU TIL604, LS600, LS602, LS611 THRU LS619

See Note A
OUTPUT
r-----+-- See Note B
TEST CIRCUIT OUTPUT VOLTAGE WAVEFORM
NOTES: A. Input irradiance is supplied by a pulsed gallium arsenide infrared emitter with rise and fall times of less than 50 ns. Incident
irradiation is adjusted for IL = 800 p.A.
B. Output waveform is monitored on an oscilloscope with the following characteristics: tr :S 25 n5, Rin ~ 1 MO, Cin :S 20 pF.
FIGURE 1
TYPICAL APPLICATION DATA
r----~--------------~~----------20V
40 Mn
5.6k!"!
15k!"!
PHOTOTRANSISTOR e------+--- OUTPUT
2.2 k!"!
=
FIGURE 2. LOW-LEVEL DETECTOR AND PREAMPLIFIER
TEXAS • 5-27
INSTRUMENTS
Tlt601 THRU TIL604, LS600, LS602, LS611 THRU tS619
TYPICAL APPLCIA TION OAT A

r---~~---- ____________________ ~ ____ 12V
+
10 kn 22 kO
TL710
::::I 680 pF
........
OUTPUT
10kn
...
II)
CD
TIL23
GND
Q,
m TRANSISTOR
10kn
3
;:+
r+
...
CD
en '----------'vv,------------......- - - - - 6 V
II) 10 kn
::::I
Q, FIGURE 3. OPTICALLY COUPLED AMPLIFIER
"'tI
:::r
or+ r-------·------~----------~--------------22V
o
...
r+
II)
22 kn 120kn 2.2 kn
::::I ~------------- OUTPUT

en
iii'
r+
...oen 2N3391
2N3391
120 kn 220 n
FIGURE 4. LIGHT PULSE DETECTOR
5-28 TEXAS ~
INSTRUMENTS
TIL601 THRU TlL604. LS600. LS602. LS611 THRU LS619
COLLECTOR CURRENT
COLLECTOR CURRENT vs
vs
2.4
2.2
10
Ee =
,, TlL602
2.0
r- See
TC : 2So C
/ 40 mW/cm 2 ,~
TC: 25"C
See Note 2
til
« 1.8
Note 2 8
+
,'%,
t-
....tilO
E
.!. 1.6 / / «
E ,~
'u)
~
/ V .!.
~ 1.4
~ 6
.0
0 c:
~
II lEe: 40 mW/cm2 ~ '~1', CtI
u
j
1.2
Ee: 60 mW/cm2 J / U
~
()
" ~.s:s-/...
....0
t-
~ ....0
"0
u
I
_u
1.0
0.8 / V
//
"0
u
I
4
.
. .!1"10",
~
a..
0.6 _u
0.4 ~ '/ V "0
..aVEe = 20 mW/cm 2
c:
0.2 Ee: 10mW/cm 2 CtI
IfiiP""
0 --" 0 til
t-
........
a 0.05 0.1 0.15 0.2 0.25 0.3 O 4 8 12
Q)
16 20
V CE-Collector-Emitter Voltage-V V CE-Collector-Emitter Voltage-V
FIGURE 5 FIGURE 6
W
'E
COLLECTOR·EMITTER SATURATION VOLTAGE COLLECTOR CURRENT "0
Q)
vs vs t-
CtI
0.24
IRRADIANCE
4.0
IRRADIANCE
....c:
t-
•
IC: O.SmA
> TC: 25°C
J. TC: 25°C 3.5
!
"0
0.20
See Note 2
See Note 2
> 3.0 V CE : 5 V
a 0,16
.~
«
E V CE : 1 V
.!.
'-..............
--
~ ~ 2.5
:;;
'" ~
u 2.0
............. j 1.5
"0
u
I
_u 1.0
0.5
a
20 30 40 50 60 70 80 a 5 10 15 20
Ee -lrradiance-mW/cm 2 Ee -lrradiance-mW/cm 2
FIGURE 7 FIGURE 8
NOTE 2. Irradiance (Eel is the radiant power unit area incident upon a surface. For this measurement, the source is an unfiltered tungsten
linear~filament lamp operating at a color temperature of 2870 K.
TEXAS ~ 5·29
INSTRUMENTS
T1L6D 1 THRU T1L6D4, LS6DD, LS6D2, LS611 THRU LS619
N·P·N PLANAR SILICON PHOTDTRANSISTORS
DARK CURRENT RELATIVE OUTPUT
VI VI
CASE TEMPERATURE MODULATION FREQUENCY
10000 10
I I / 7 VCE = 5 V
-......
::::I
1000 f-- VCE = 30 V
~
4
TC 25°C
..
Ee= 0 2
I» 100
CD
Q.
«c
.!.c
10
V '5
~
I
0.7
RL -loon
m OJ~" V 0
.~
0.4
'"kri,
3 i!.. I;; 0.2 'I.
Ii
:;::;: RL = 1
V
..
0 a:
r+ I 0.1
CD _0
0.1
/ 0.07
(I)
/ 0.04
I» om / RL = 10kn
::::I V 0.02
Q.
~
0.001 0.01 II 11111
:r -50 -25 o 25 50 75 100 125 1 2 4 10 20 40 100 400 1000
0 T c-Case T emperature-0 C f mod-Modulation Frequency-kHz
..
r+
0 FIGURE 9 FIGURE 10
r+
I»
::::I
(I)
RELATIVE OUTPUT
iii'
.
r+
0
(I)
COUPLING CHARACTERISTICS
OF TI L23 OR TI L24 WITH TI L602
I.S
VI
CASE TEMPERATURE OF SOURCE AND SENSOR
100
70 SOURCE: SENSOR:
TlL24 or TILS02 1.4
40 TIL23 VCE = 2 V
20 ~ IF - 50 rnA TC - 25°C
1.2
-
TC = 25°C
« 10 ~ ........... :; 1.0
E
.!.c ~ ~
~
4
"-
.
0
.~
O.B k'
"
OJ
:;
Co
'5
2 "-
'\1\.
ia: 0.6
I
/
'- SOURCE: SENSORS:
0 TlL23 or TlL24 TIL601- TILS04
0.7
0.4 - - IF=50rnA LS600. LS602.
LS611 thru LS619
0.4
VCE - 5 V
0.2
0.2
0.1 o
om 0.02 0.04 0.070.1 0.2 0.4 0.7 1 -75 -50 -25 o 25 50 75 100 125
Distance Between Lenses-in TC-Case Temperature of Source and Sensor-°c
FIGURE 11 FIGURE 12
5-30
TEXAS ~
INSTRUMENlS
TIL601 THRU TlL604. LS600. LS602. LS611 THRU LS619
NORMALIZED LIGHT CU"RRENT
vs
ANGULAR DISPLACEMENT
1.25
.:'
1.00
v ""'\
.
U)
...
o
U)
E
I \ 'm
.....
~~ c
if ·x. \
0.75
<) co
j
..J
~
§
0.50 ,
I «
I
0
1\
...oo
.c
Q.
Z° 0.25
"C
C
co
00
500 400 300 20° 10° 0° 100 200
9-Angular Displacement
300 40° 500
..
U)
...
CI)
.t::
FIGURE 13
E
w

....
"C
CI)
co
1.2r_------r-----~r_----~r_----~~----~------~------~------_r------~ ....
Output of Tungsten .E
Source at 2870 K
i Response of Human Eye
1.0!-------t-------1I~~--_r------_t------_lt;~--~~~-- ..+_~=:==l_------1
o
; 0.8r_------+_------4-l---_\-+------~~----~~----_4~~~--+_------+_------~
I
~ 0.6r_------+_------4f------~~~--_+~~--~~----~~~--_\+_------4_------~
i
1/1 0.4 1-------+-------I+------,~_4'~--+_+-----
~Ii
~ 0.2r_------+---~~~------~~~--_+------~r_--_f--~_4----+_--~--4_------~
O~~~~'_ __ ~~ ______ ~ ____ ~~ ____ ~~~~~ ___L_ _ ~ ______ ~ ____ ~
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
x- Wavelength - J.Itn
FIGURE 14
TEXAS • 5-31
INSTRUMENTS
....
::l
...I»
...CD
C.
m
3
;:;:
r+
...
CD
UI
I»
::l
C.
"'0
::r
o
r+
o
...I»
r+
::l
UI
(ij"
r+
o...
UI
5-32
TlL604HR2
HIGH"RELIABILITY PROCESSING AND LOT ACCEPTANCE
• This processing applies only to devices ordered under the part number TIL604HR2
• For electrical and mechanical specifications. refer to TIL604 data sheet
This processing and lot acceptance follow the sequence of tests in MIL-S-19500 for JANTX types. This is not to
be construed to be a JANTX-qualified part. A detail specification is available upon request through your TI Field Sales
Office. local authorized TI distributor. or by writing directly to:
P.O. Box B09066
"en
..
~
o
II)
100% Processing
TEST
MIL-STD-750
TEST METHOD
c:
.......
CO
o
o
Storage: TA = 125°C, t = 24 h 1032 ..c:
Q.
Temperature Cycle: -55°C to 125°C, 10 cycles 1051
Constant Acceleration: 20.000 G. Y 1 axis 2006 "C
c:
High-Temperature Reverse Bias: CO
VeE = 30 V,
TA = 125°C, t
Power Burn-in:
Po = 50 mW,
= 48 h
1039
1039
..'E...CD
II)
t = 168 h w
Hermetic Seal, Fine 1071 Condo G or H "C
Hermetic Seal, Gross 1071 Condo C or 0 l!!
External Visual
Product Acceptance
2071
.......
CO
c:
Group A: LTPO = 5
External Visual
Electrical: T A
Electrical: TA
Group B-1:
= 25 DC
= 100°C
LTPO = 15
2071
II
Solderability 2026
Group B-2: LTPO = 10

Thermal Shock 1051 Condo B-1
Hermetic Seal. Fine 1071 Condo G or H
Hermetic Seal, Gross 1071 Condo C or 0
Group B-3: LTPD = 5

Steady-State Operating Life: t = 340 h 1027
TEXAS
INSTRUMENTS
-II 5-33
TlL604HR2
MIL-STD-750
TEST
TEST METHOD
Group 8-4:
Decap, Internal Visual; Design Verification
1 DevicelO Failure 2075
80nd Strength LTPD ~ 20 (C ~ 0) 2037 Condo A
Group 8-5: Not Applicable
....
::l
~
Group 8-6: LTPD ~ 7
High-Temperature Life (Nonoperating) 1032
Q)
~ t ~ 340 h
CD
c. (Group C Tests are run on one lot every six months)
m Group C-l: LTPD ~ 15
3
;:;:
Physical Dimensions 2066
r+ GrOl!p C-2: LTPD ~ 10

CD Thermal Shock (Glass Strain) 1056 Condo A
~
VI Hermetic Seal, Fine 1071 Condo Gar H
Q) Hermetic Seal, Gross 1071 Condo Cor D
::l Moisture Resistance 1021
C. External Visual 2071
"'C
::r Group C-3: LTPD ~ 10
o
r+
Shock: 1 500 G 2016
or+ Vibration: 50 G
Acceleration: 2000 G (X 1, Y 1, Y 2 axis)
2056
~
2006
Q)
Group C-4: LTPD ~ 15
::l
VI Salt Atmosphere 1041
(ii'
r+ Group C-5: Not Applicable
o
~ Group C-6: A ~ 10
VI Steady-State Operating Life: t ~ 1000 h 1026
5-34 TEXAS •
INSTRUMENTS
Quality and Reliability
6-1
Contents
Page
Quality/Reliability Program .......... '.' ........................ . 6-3
Device Reliability Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-9
•
6-2
TEXAS INSTRUMENTS QUALITY/RELIABILITY PROGRAM
FOR OPTOELECTRONICS AND IMAGE·SENSING COMPONENTS
QUALITY IRELIABILITY PROGRAM

FOR OPTOELECTRONICS AND IMAGE-SENSING COMPONENTS
Texas Instruments has an extensive commitment to produce semiconductor products with the highest quality
and reliability performance possit:ie. TI monitors/controls the entire semiconductor process, from the earliest
stages of device processing through completion of the final device. These monitored processes, which follow
rigid quality standards, are illustrated in Table 1. To further emphasize this quality thrust, TI incorporates quality
reviews with many of our major customers. These reviews incorporate comparisons between customer incoming
and TI outgoing inspection reports and in many cases have gained the customer confidence required for ship-
to-stock implementation. Our continuing goal is to be the Number 1 supplier in the industry, and we have set
up our QA program to meet this challenge.
The broad spectrum of industrial/military applications demands that our products operate under adverse conditions
and prolonged use. Please refer to Table 2 for our overall testing capability and to Table 3 for specific military
standard test capability available at TI.
Extensive facilities are used in our failure analysis laboratory to analyze in-house and field failures of TI devices.
Inputs from this lab are instrumental in generating the actions necessary for continuous improvement of our
products. Table 4 outlines our Failure Analysis Procedures and our test facilities.
In summary, this chapter includes the following tables:
Table 1 Typical Standard Device Flow
Table 2 Overall Test Capability
Table 3 Military Standard Test Capability
Table 4 Failure Analysis Capability
>-
~
:.c
.!2
TEXAS INSTRUMENTS QUALITY POLICY "i
a:
For every product or service we offer "C
we shall define the requirements that solve C
the customers' problems, and
a:s
>-
.t::
WE SHALL CONFORM TO THOSE REQUIREMENTS
WITHOUT EXCEPTION. CU
::::s
C
For every job each Tier performs
the performance standard is:
DO IT RIGHT THE FIRST TIME.
TEXAS • 6-3
INSTRUMENTS
Table 1. Typical Standard Device Flow

Piece parts per device
specification from incoming
accepted inventory or front end
QC Monitor (Epoxy Coverage) Apply Mounting Epoxy
QC Monitor (Oven Temperature) Mount Bars and Cure Epoxy
QC Monitor (Bar Alignmentl Visual Inspection
'ac Monitor (Machine Condition/Bond Parameters/Bond Strengthl Bonding
QC Monitor (Bond Visual) Bond Inspection
QC Monitor (Epoxy Mix. Machine Condition. Seal Integrityl Seal/Encapsulation
QC Monitor (Electrical Test) Electrical
Symbolization
QC Monitor (VIM Inspect) Visual/Mechanical Inspection
Sample Solderability Test
Sample Temperature Cycle Test
Ship
•
TEXAS . "
6·4 INSTRUMENTS
Table 2. Overall Test Capability
Test Capability
Acceleration, Sustained 50 to 50,000 G (standard)

(Centrifuge)
Bond Strength o to 25 grams
Altitude (Barometric 150,000 It simulated altitude
Pressure, Reduced)
Electrostatic Susceptibility MIL-STD-883, Method 3015
Flammability 800°C to 1100°C
Moisture Resistance + 2 °C to 96°C, 40% RH to 100% RH
H.A.S.T. +85°C to +138°C, 40% RH to 100% RH
Particle Detection
Acoustical (PIND) =:: 1 microgram
Electrical Intermittency =:: 1 p.s with 100-mV amplitude
Pressure Cooker (Autoclave) o to 1 5 psig of steam pressure
Radiographic Inspection (X-Ray)
Film Resolution to 0.001 inch, 150 kV, 5 mA
Salt Atmosphere/Spray 25°C to 45 oe, up tp 20% salt solution
Seal
Gross Leak
Bubble ;" 1 X 10 - 5 atm cm 3/s
Dye Penetrant ;,,5 X 10- 6 atm cm 3/s
Weight Gain >2 X 10 -6 atm cm 3/s >
Radioactive Tracer Gas ~1 X 10- 10 atm cm 3 /s :!:
Symbolization :.c
(Resistance to Solvents) .!2
Shock (Mechanicall To limits of: MIL-STD-202, Method 213 "i
MIL-STD-750
MIL-STD-810. Method 516
a:
MIL-STD-883 "C
I:
Solderability, Meniscograph MIL-STD-883, Method 2022 ca
Solderability/Soldering Up to 280°C >
Temperature Cycling -65°C to +200oC :!:
Terminal Strength (Lead Integrity) Lead Fatigue, Tension, Torque
ca
:::s
Thermal Shock -65°C to +200oC o
Ultrasonics o to 100 psi at 40 kHz or 25 kHz
Vibration. Fatigue
Vibration, Random
Vibration, Variable
10 to 100 Hz, 5 to 70 G
20 to 2000 Hz, Power Spectral Density 1.3 G 2/Hz
5 to 2000 Hz as limited by 1 inch double
amplitude and 60 inches/second velocity.
II
o to 70 G (standard), 70 to 100 G (nonstandard)'
*Limited fixture availability.
TEXAS • 6-5
INSTRUMENTS
Table 3. Military Standard Test Capability

TEST CATEGORY MIL·STO·202 MIL-STO-750 MIL-STO-883
All Conditions All Conditions All Conditions
Altitude
except G except G except G
Bond Strength Conditions A or B Conditions A, C, or 0
Dew Point All Conditions All Conditions
Flammability All Conditions
Immersion All Conditions All Conditions All Conditions
Insulation Resistance All Conditions All Conditions All Conditions
Meniscograph Solderability All Conditions
Moisture Resistance All Conditions All Conditions All Conditions
Resistance to Solvents
(Symbolization)
Salt Atmosphere All Conditions All Conditions
Salt Spray All Conditions All Conditions
Seal All Conditions All Conditions All Conditions
Solderability All Conditions All Conditions All Conditions
Soldering Heat All Conditions All Conditions
All Conditions All Conditions
All Conditions
Temperature Cycling except Method 107, except Method 1051,
except E
Conditions 0 & E Conditions D & E
Temperature Storage Conditions A thru F
Terminal Strength
(Lead Integrity)
Axial Lead
All Conditions
Tensile Test
Thermal Shock All Conditions
All Conditions
(Glass Strain) except E & F
All Conditions
Acceleration, Sustained
All Conditions All Conditions Method 2001,
(Centrifuge)
except G, H, & J
Particle Impact
Noise Detection All Conditions All Conditions
IPINOI
Forward Instability
All Conditions
Shock (FIST)
Backward Instability
All Conditions
Shock (BIST)
All Conditions
Method 2002,
Shock (Mechanical) t All Conditions All Conditions Conditions F and G,
may require special
fixturing. l
t Also perform mechanical shock per MIL-STO-8108, Method 516.

t: Call Physical Test supervisor for available fixtures.
6-6 TEXAS . "

INSTRUMENTS
FOR OPTOELECTRONICS AND IMAGE·SENSING CDMPONENTS
Table 3. Military Standard Test Capability (Continued)

TEST CATEGORY MIL·STD·202 MIL·STD-750 MIL-STD-883
Vibration, Fatigue All Conditions All Conditions
Vibration. Noise All Conditions All Conditions
Vibration, Random t All Conditions
Vibration, Variable Frequency t All Conditions All Conditions All Conditions
X-Ray, Filml All Conditions All Conditions All Conditions
t Also perform random vibration and variable frequency vibration per MIL-STO-8108, Method 514.1. procedures I, II, III, IV, V, VI, and
VII. Omit paragraph 4.5.1.1. Resonant Search, and paragraph 4.5.1.2, Resonant Dwell.
Radiographic inspection is performed in accordance with many government and customer specifications. Before any new radiographic
:j:
specification is accepted or deemed acceptable for use as a test standard within the Semiconductor Group, it must be approved by
Environmental Test Services.
Table 4 ..FaiJU1"e Analysis Capabilities

I. Nondestructive Techniques
A. Hermeticity evaluation
B. X-ray interpretation of bonding and die mount
C. Electrical characterization
1. Breakdown. leakage. and functional tests run at temperature extremes
2. Polaroid documentation of curve traces and/or oscilloscope traces
II. Destructive Techniques

A. Decapsulation/Delid of devices
B. Probe and isolation of electrical defects
C. Layer-by-Iayer removal of device levels by selective etching
D. Microsection analysis
1. Sections taken at shallow to 90 0 angles - sample sizes to 1.5 inches
2. Selective staining to delineate diffusions. dielectrics. etc.
3. Thickness measurements by SEM or optical microscopy
E. Optical microphotography - magnifications to 5000X
F. Infrared microscopy - transmission and reflection
G. Nanometrics
H. Planar plasma etching
I. Scanning electron microscopy - SEM
1. Routine magnification to 50.000X
2. 50-A resolution
3. Back-scattered electron detector
4. Military product lot acceptance of metallization
5. Voltage contrast
6. Specimen current amplifier
J. Electron microprobe
1. Chemical detection of elements with atomic number greater than 11
2. Typical 4- to 5-l'm beam penetration
3. Spot size typically 1000 to 2000 A
K. Auger spectroscope
L. Ion microprobe mass analysis
M. Gas and/or plastic composition analysis
TEXAS " , 6-7

INSTRUMENTS
II
6-8
TEXAS INSTRUMENTS OPTOCOUPLER RELIABILITY DATA
OPTOCOUPLER RELIABILITY DATA
INTRODUCTION
Texas Instruments designs and builds quality and reliability into all the products it offers to the electronic
marketplace. The quality control organization is uniquely responsible for coordinating the total effort and for
providing direct action necessary to insure that quality and reliability objectives are met.
The reliability data shown in this report is indicative of the extensive testing performed by TElx3.s Instruments on
all components to assure continued leadership in quality and reliability. Included in this report is a summary of 1987
through June 1989 reliability testing on the 4N22 and 4N47, parent devices for the JAN, JAN"FX, and JANTXV
metal can optocoupler products, and typifies results of product built to the standard device product flow.
OPERATING LIFE TEST
Data was summarized from monthly and semi-annual Group B and Group e quality conformance inspections
according to MIL-S-19500/486A (4N22) and MIL-S-19500/548 (4N47) plus additional testing deemed necessary
by TI Quality Assurance to guarantee process integrity. Life testing was performed under the following conditions:
TA = 25°e
IF = 20 mA
VeE = 10 V
PD = 275 mW
Test duration varied from 340 hours to 1000 hours to allow data accumulation on 8545 devices exercised for
a total of 4,074,160 device hours. No critical failures were observed.
In addition, 4801 device type 4N24 optocouplers have been placed on continuous life test at the above referenced
conditions for long-term monitoring of performance characteristics. These devices are read and recorded at 1000
hour intervals, and have accumulated 14,735,100 device hours with no critical failures. This data also applies
to JAN, JANTX, and JANTXV products.
STORAGE LIFE TESTS
Devices were stored in ovens at 125°e for 340 or 1000 hours (depending on requirement). Readings of all
parameters included in the device specifications were made with zero failures in the sample of 4372 devices
for a total of 1,822,560 device hours.
ENVIRONMENTAL TESTS
The tests listed in Table 1 were performed on samples of the product with the catastrophic or degradation failures
as shown. The test conditions shown represent requirements imposed on the product by our customers and
do not necessarily represent maximum capability of the component. Inquiries concerning response to the specific
requirements should be addressed to your TI sales representitive.
TEXAS . " 6·9

INSTRUMENTS
TEXAS INSTRUMENTS OPTOCOUPlER RELIABILITY DATA
Table 1. Environmental Test Results

MIL·STD·750
QUANTITV
TEST TEST FAILURES
TESTED
METHOD
1016 High Temperature Isolation Voltage, 1493 0
VIO = 150 V. TA = 125°C, TO = 24 hr.
1051 temperature Cycling, - 65°C to + 125 "c, 1304 1
15 minutes at extremes (25 cycles)
1056 Thermal Shock (Glass Strain).
100°C to -5°C, 5 cycles
1021 Moisture Resistance
2016 Mechanical Shock, 1786 1
1500 G, 0.5 ms, X1, V1, V2
2050 Vibration, Variable Frequency,
50 G minimum
2066 Constant Acceleration,
30 kG, 1 minute X1, V1, V2
II
6·10 TEXAS •
INSTRUMENTS
Applications
7-1
»
"C
"0
(')
til
::!'.
o
::J
CII
II
7-2
APPLICATIONS SUMMARY
Page
Multiplexing Displays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-5
A common requirement is to display numbers, letters, and special symbols. Described are circuits
to interface with 7-segment and 5 x 7 dot-matrix displays.
TIL311 Hexadecimal LED Display . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 -11
The display of register information on computer control panels is an ideal application for the TIL311.
A TIL311 display with on-board electronics is illustrated.
Counting Circuits Using TIL306 and TIL308 LEDs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7 -13
Complex counting and display circuit designs are described in simple terms. Several typical circuits
are explained.
Optocouplers in Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7 -19
A review of the characteristics of optocouplers also provides descriptions and illustrations of how
they are used in typical circuit applications.
Interfacing Using Optocouplers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-25
Worst-case design techniques are used for choosing component values for the interface circuitry
between optocouplers and standard TTL logic gates.
CCD Output Signal Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-33
A variety of methods are presented for converting CCD output signals into analog or digital video
data.
linear CCD Operation at 10 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-49
The operating of the CCD linear image sensor and the digitization of the output signal at 10 MHz
is discussed.
Operating Instruction Set for linear CCD Image Sensor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-59
Described is the instruction set for operating the CCD linear image sensors (TC102, TC103, TC104,
and TC1 06-1) on a board (PC401 orPC402), and in an evaluation kit (TCK1 02, TCK1 03, TCK1 04
or TCK1 06-1.
A Simple Method of Conditioning the Output of a CCD Imager to a Digital System ............ 7-65 In
c::
This is a description of a simple method of converting the output of a CCD imager into a binary o
'';:::;
waveform in which one logic level represents "black" and the other "white" for bar-code or optical
character reading applications.
ro
(.)
TC103-ISM and Interfacing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-67 c.

c.
The scanner module, interfacing circuit, and I/O ports are discussed. Applications include facsimile
scanner, optical recognition, and PC scanner.
«
II
7-3
7-4
MULTIPLEXING DISPLAYS
seven-segment displays The entire circuit and display is available as a single

device, the TIL306, shown in Figure 2b. This device has the
To display numbers and symbols an array of display
4-bit BCD code input, a decimal point input, and depends
elements is required. Two common configurations are
on a non-BCD code to provide blanking. Devices also exist
shown in Figure 1. Figure 1 a shows the seven-segment
that include a register as well as a decoderldriver and display
display that can be used to display the decimal numerals
in the same unit. The TIL30B shown in Figure 2c is one of
and some alphabetical characters by turning on appropriate those. It stores the four BCD inputs in a quadruple S-R flip-
segment patterns. Figure 1 b shows a 5 x 7 dot matrix that
flop whose outputs are available from the device. There is
can be used to display any alphanumeric symbol by turning
a latch strobe input that, when low, stores the BCD code
on the appropriate dot pattern. The pattern required for each
in the 4-bit register. There is a blanking input, BI, that, when
low turns off all segments, and an LED test input that, when
a low, turns on all segments. If the LED test and the BI inputs
f~=~b
are both high, the display shows the number whose code
is latched in the device data register. Such a register
simplifies the 1/0 requirements of the microcomputer since
e~~~c
it can be treated as a complete storage location. It may be
connected to either the data bus or any special system 1/0
bus.
=d The interface to a 5 x 7 or other dot matrix is handled
a. SEVEN-SEGMENT LED DISPLAY in much the same way as the seven-segment device. The
simplest device of this type is the TIL311, which displays
00000 hexadecimal characters using LEOs arranged on a 4 x 7
00000 dot matrix pattern as shown in Figure 3a. It includes a 4-bit
00000
data register with a latch strobe input that causes the 4-bit
00000
input data to be entered while the strobe is low. As long
00000
00000 as the strobe stays high, the information displayed and
00000 stored will not change. Thus, one could treat the strobe as
b. 5 X 7 DOT MATRIX DISPLAY a rising-edge latch signal. The overall structure of the TIL311
is shown in Figure 3. There is a blanking input that, when !/)
Figure 1. Display Matrices
high, causes the display to be blanked. There is a left and r::
number, character, or symbol to be displayed must be stored right decimal point input available. o
";:
in a read-only memory or a display decoder in order to The control of a 5 x 7 dot matrix display device like CO
properly display a desired character. The interface to a the TIL305 requires a ROM or EPROM in which the display Co)
seven-segment display is the BCD-to-seven-segment pattern for each character to be displayed is stored. The
0.
decoder driver like the SN7446 shown in Figure 2a. The basic circuit structure is shown in Figure 4 for an individual 0.
input to the decoder is the BCD code for the number to be
displayed. The RBI and BI signals can be taken low to turn
interface to a TIL305. The TTL signals from the seven input
lines (ASCII' code inputs) are connected to the inputs 11
«
off all segments, regardless of the input code. When BI is
high, the LT (amp test) input can be brought low to turn on
all segments to perform a lamp test operation. The BIIRBO
can serve as an output for ripple blanking to other decoders.
through 17. The current-drive capability is provided by
SN75491 drivers acting as sink drivers from the output lines
01 through 07 and as source drivers for the column lines
on the TIL305. At the time a column line is driven with
II
When RBI is brought low, RBO as an output will go low for current, the column select code CA through CE must
rippling a blanking signal to other display decoders. The simultaneously be applied to the column select lines of the
segment drivers A through H are connected to the LED's EPROM. The EPROM outputs the seven row signals for a
of the display to control which LED's are turned on.
7-5
5V TIL302
RANGE
, 3
r---<
,.
.- ,
,Ir ,
,.. , ,
D.P. E
.. ,.
F
9
G
,Ir ,
C
,
D
14
,......-; It-
,Ir ,
,Ir ,
A B
A
SW~CH 6 7 2 11 10 8 1 13
R1 R2 R2 R2 R2 R2 R2
R2
~
BI/RBO-C
D
RBI-<J
VCC
I I I
D C
I TYT
B A LAMP GND
'-.,---I TEST
BCD INPUT
a. SEVEN-SEGMENT DISPLAY INTERFACE
LOGIC LED
SUPPLY SUPPLY
BCD { B CONSTANT
INPUTS ~ CURRENT
DRIVER
~~~~AL __________________J
b. TIL306
BI
LATCH
1.
v
1
4
4 BIT
INPUT CODE
4 7·SEGMENT
DECODER·
REGISTER DISPLAY
DRIVER
4BIT
OUTPUT
LT T
c. TIL30S
Figure 2. Seven-8egment Displays
7-6
0 0 0 0
0 0
0 0
0 0 0 0
0 0
0 0
0 0 0 0
TIL311
a. MATRIX 4 X 7 PATTERN.
LED
SUPPLY
LOGIC
A
LATCH { B
4·BIT
DATA
LATCH
INPUTS :
LATCH CIJ
STROBE l:
UNIT o
'';:;
Ctl
()
0.
0.
LEFT
DECIMAL
POINT
RIGHT
DECIMAL
POINT
«
II
CATHODE CATHODE
b. SCHEMATIC
Figure 3. 4 X 7 Matrix
7-7
selected character for a selected column. Thus, the circuitry resource must be used. This means that the display must
must scan through the columns at an appropriate rate by provide a RAM for storage of the character codes to be
using either a ring counter or a counter-decoder combination. displayed and a sequence controller that will sequence
In the example of Figure 4, an SN75496 5-bit ring through the codes stored in RAM while the different TIL305s
counter is set up so that only one bit position will have a are activated. The basic structure is shown in Figure 5 for
1 at any given time. This is achieved with the wired-NAND a l6-character display.
control (SN7416) on the serial input. For example, if all There must be l6-location RAM, and each location
outputs A through E (all bits) in the register are 0, the serial must store a 6-bit ASCII code. There must be a modul0-16
input line will be at the 1 level, and a 1 will be shifted into counter that determines which RAM code and character
the first bit position. This 1 (in the A position) causes the position is to be used at any given time. The TIL305 that
serial input line to go low (to a 0), which will be shifted in is activated is selected by the output of a 4-to-16 decoder,
to fill the lower bits with zeroes. The original 1 will propagate The decoder turns on one group of the SN75493 sink drivers
through to E with each rising edge of the clock. When the for the selected character position. The sink drivers for all
1 is at E, a 1 will again be generated at the serial input to other character positions are turned off, and the associated
insert a new 1 into A when the 1 is shifted out of E. Thus, TIL305s for those positions remain off. The modul0-16
there is only one 1 in the shift register at any time. Only counter is incremented by the trailing edge of output E from
one column of the EPROM is addressed at any time, and the central 5-bit ring counter, since that marks the beginning
only one column of LED drivers is turned on at any time. of the new column 1 display. There must be a provision for
Also in the example of Figure 4, the unijunction oscillator writing into the RAM from the processor and a write control
is set to provide a clock pulse sequence at a frequency of signal, W: that will switch the RAM address from the
about 1,000 pulses per second. A new column is selected modul0-16 counter to the processor address lines. The
and turned on for about a millisecond, and a column is on SN74LS245 for each bit provides the switching required.
20 percent of the time. This connection allows the information being displayed to
The circuit of Figure 4 provides only a single-character be controlled by processor memory write or output
display position. If a mUltiple-position character display is operations. The overall structure of Figure 5 is somewhat
required, it is not reasonable to provide a separate EPROM complicated, but it can be cost effective in both power
for each display, unit. In other words, it is not feasible to dissipation and parts costs. A similar approach can be used
repeat the circuit of Figure 4 for each character in the for time multiplexing of 7-segment displays to save power
multiple position display, A circuit that shares the EPROM consumption.
II
7-8
BLANKING
INPUT
Vee = 5v
GND
~SN75491
Figure 4. 5 X 7 Matrix
....,
to
II Applications
':"'
o
• SUO!le~!ldd"
12 V
BLANKING CLEAR 154kn 154 kn
INPUT
221 kn v.-...
I
"~"." ~Jw
PRESET 2N3980/ ~
~ SERIAL CLOCK 2N4891
SN1496 0.01 ~F
~t;. GND OUTPUTS 100 n
VCC ~ GND IE 0 C B A' V _
--ri SN75491
:::[):> SN75493
RAM
16 LOCATIONS
DAT AIN+ 1 BITS PER
LOCATION
II:
W
CH IP
SE .ECT
_ CS r---
t---
5 r---< w t--
.~
ga: ADDRESS
CE CA T I I
~
u
iii 4
Co Cc Cs
0, ~ D>-
ADDReSS;..;...
Ao- A 3
• 4 16
L-11 °2 ;;:L....P- p-
~
R/W 15
L-- OJ rL.J>-
121 SN14LS2.;- L--I. EPROM 0.
~
TIl305 TlL305
°5
4
13
12 Os
L.
p-
1, °1
IL P- r-~
GND
VU"" tv-
* 8
IMODULO 16
1
.1 8
COUNTER
J
4·TO·16 DECODER
Figure 5. 16-Character Display

TIL311 HEXADECIMAL LED DISPLAY
The T1L311 is designed to store and display decimal and TTL compatihle: a high level is 2 V to 5 V. a low level is
hexadecimal da tao The device consists of an MSI logic chip OVtoO.XV.
to perform logic and storage functions plus a light emitting The hlock diagram in Figure' 2 shows the major
diode (LED) display in a single 14'pin dual in-line package. sections of the T1UII: latches. decoder. current driver.
I! accepts parallel 8-4·2·1 data on four input lines and and LED display. The inputs are DATA. LATCH STROBE.
displays the corresponding decimal or hexadecimal charac· BLANKING. and DP. DATA is parallel XA-2·1 coded data.
ter on a 4-by·7 dot matrix. Figure I illustrates the When LATCH STROBE is low. the data in the latches
hexadecimal character representation for the decimal follow the data inputs. When LATCH STROBE goes high.
numbers 0 through 15. The logic levels are designed to be the data on the input lines at strobe time is stored in the
latches.
···..·· ··· ..... · ..... · .... ·· · ...·.... ...·... ....··

The 4·hit code is decoded and the required diodes are
turned on via the constant-current drivers to display the
·.. · · ... · ·· ...·· ··... ··

·· ....
proper character.
The LED display contains two decimal points: one to
the left and one to the right of the character. A low input
o 4 6 to one of the DP inputs will turn that decimal point ori.
···....·· ......·· ··.·......· ·...·...·· ···... ···...··· ·...··.... ·...·....

BLANKING must be low to display the character.
When BLANKING goes high, the character is turned off
regardless of the inputs. The BLANKING input does not
.. · .. . ... ... ...· .... · · change the data stored in the latches. BLANKING may be
pulsed to intensity-modulate the display. The apparent
8 9 10 11 12 13 14 15 brightness of the display is proportional to the duty cycle
of the modulating signal, assuming a frequency high enough
FIGURE 1. T1L3II Hexadecimal Character Configuration to avoid visible flicker. For example, at 1 kHz, a 50% duty
BLANKING
INPUT
LATCH
rn
STROBE
c:
INPUT
~
I ...
o
ctI
(.)
••••••••
22
-=---- Q.
DATA
FOUR CONSTANT
c..
INPUTS 21
-=----
BIT
LATCH
DECODER CURRENT
DRIVER
•••••• «
• •
DP
~
••••••
I
II
FIGURE 2. TIL311 Hexadecimal Display Block Diagram
7-11
LATCH
STROBE
ENABLE
I
TIL311
lOGICAL
ONE
1.-- r--
~J a~ -J O~ J a-LL)-LJ o~
CLOCK - r- ClK ~ - ClK ' - - ClK - ClK
'-- K J-- K K
r K Q~
FIGURE 3. TlL311 Used As Counter Display
MSB lSB
.0.00.00 •••• 00.0

FIGURE 4. Discrete Light Display fora 16·Bit Register
cycle would cause an apparent brightness of 50% of the data. Figure 5 illustrates the use of the TIL311 to display
steady·state brightness. the same data in the same l6-bit register. The 16 register
Figure 3 illustrates the use of the TIL3ll as a decimal pOSitions are divided into four 4-bit groups. The four bits in
display. The JK flip-flops are connected as a count·by-ten each group proVide the inputs to ·each of four TIL311
counter and represent one decade position in a multi- displays. The resulting four hexadecimal character display
decade counter. The four Q outputs of the·four flip-flops proVides a more concise interpretation of the register data.
furnish the data inputs to the TIL311. Normally LATCH
STROBE will be held high so that the display does not
• •• ••••• •• •••••• ••• •

follow the counting. When counting is complete for a given
time base, LATCH STROBE is pulsed with a negative-going
pulse. The new data is then transferred from the decade ••••• •••• ••• •
counter into the lau;hes and displayed.
••• ••• • • • ••
•• •• •••••
Another application for the TIL311 is to display
register information on computer control panels and service
panels. Figure 4 illustrates the use of discrete lights to
display the contents of a l6-bit register. The length of the
•
display can easily lead to errors in interpretation of the FIGURE 5. Hexadecimal Display fora 16·Bit Register
7-12
COUNTING CIRCUITS
USING TIL306 AND TIL308 LEOs
Digital instruments have experienced a constant evolution in-line package, Texas Instruments has provided the
since 1960, Counters that once occupied several inches of designer a device that reduces the complexity of his system
rack space in a 19-inch rack have been replaced by units the without reducing flexibility of design, Two of these devices
size of a text book with performance characteristics are the TlL306 and TIL301l, The TlL306 and TlL308 have
surpassing the older models, A major contribution to these decimal points to the left side of the character. The TlL307
changes is the continued advances in solid-state devices: and TlL309 have decimal points to the right side of the
integrated circuits have replaced the tubes and transistors character, but are otherwise identical to the TlL306 and
and light-emitting diodes (LEOs) have replaced the TIL308, respectively, They can be combined to count,
incandescent displays, store, and display data in multiple decade positions,
Texas Instruments has introduced a new product that CIRCUIT DESCRIPTION

simplifies further the design of systems utilizing counters or The TlL306, as shown in Figure I, consists of four
digital read-outs, By combining an 1(' chip to perform the major sections: counter, latches. decoder/driver, and LED
logic function and an LED display in a single 16-pin dual display,
LOGIC OUTPUTS
__-.....J'......- ___
TO LOGIC CHIP
I/)
!:
o
+J
ca
(.)
c.
c.
<t
•
RBO OECIMAL
NODE POINT
INPUT
LATCH ~~----------------~
BLANKING
STROBE INPUT
INPUT
L-~C=O=U=N~T~E=R~--"ILI__~L=A~T~C=H~E=S~--"ILI______D_E_C_O_D_E_R_I_D_R_IV_E_R______-JILI____~L~E~D~D~IS=P~L~A~v____J
FIGURE /, Functional Block Diagram of TIL 306
7-13
The counter is connected as a synchronous counter. input of the next decade position for synchronous
This configuration takes advantage of the minimal operation.
propagation delay to give maximum speed capability. A high on SERIAL CARRY inhibits the counter and
Inputs to the counter are CLEAR, CLOCK, SERIAL forces MAX COUNT to go high regardless of the state of
CARRY, and PARALLEL CARRY. The counter and its the counter stages. When SERIAL CARRY and
inputs generate an output, MAX COUNT. Additional PARALLEL CARRY go low, the CLOCK is enabled to the
connections are LATCH STROBE, BLANKING, RIPPLE counter stages and the MAX COUNT gate is allowed to
BLANKING, RBO, DECIMAL POINT and LOGIC sense the status of the counter. The logic level of SERIAL
OUTPUTS. All inputs and outputs are designed to be TTL CARRY must not be allowed to change while CLOCK is
compatible. A high level is a minimum of 2 V and a low low or erroneous counts may result.
level is a maximum of 0.8 Y. A low input to CLEAR will PARALLEL CARRY permits look ahead carry inputs
reset the counter to zero independently of any other input. from lower order decade positions. A· high input inhibits
As long as the input remains low the counter remains at the clock to the counter stages. When PARALLEL CARRY
zero. A high is required to allow the counter to count. and SERIAL CARRY go low the clock to the counter
stages is enabled. The logic level of PARALLEL CARRY
The CLOCK input is the signal to be counted. With must not be allowed to change while CLOCK is low or
an input the counter wiJI advance from 0 to 9. At a count erroneous counts may result.
of 9 the counter automatically resets to 0 with the next LATCH STROBE transfers the data in the counter
pulse. The counter changes state on the positive-going edge stages to the latch storage to be displayed. With LATCH
of the clock pulse. The clock pulse to the counter is STROBE low, the latch flip-flops follow the states of the
controlled by SERIAL CARRY and PARALLEL CARRY. counter flip-flops. When LATCH STROBE goes high, the
The MAX COUNT output goes low when the counter counter data is stored in the latch flip-flops. The counter
reaches a count of 9, and then goes high when the counter can continue to count while the previous information is
progresses to 0 on the next clock input. This output can be stored in the latches.
connected to the CLOCK input of the next decade position The DECIMAL POINT input controls the display of
for asynchronous operation or to the SERIAL CARRY the decimal point. A high is required to turn on the LED
decimal point display.
LATCH OUTPUTS
,...---J'--..
BLANKING
INPUT TO LOGIC CHIP
LATCH
STROBE
INPUT
A ---jr>o......+-rb
LATCH
DATA
INPUTS
• iEES~ -<{>o--------t>---~-~====:t:'Ly---~
INPUT
L---_--=LA.-..T.:..CcHES _ ....JIL-____--=D::.:E:.:C:.:O:~O:..:E:.:R.:.:/=O.:.:R.:.'V:..:E=_R_'___ _ _ _ _ ____'L_ _L_E_D_O_IS_P_L_A_V_ ___'
FIGURE 2. Functional Block Diagram of TIL308
7-14
A high on BLANKING inhibits the driver and gates LEAST SIGNIFICANT
MOST
and blanks the LED display. For normal operation, the SIGNIFICANT BIT BOT
ZERO
BLANKING input must be low. SUPf'RESS
\~~~CT
A low on RIPPLE BLANKING blanks the display if --lCH
the latch flip-flops contain a count of zero. This
combination also forces the RBO NODE to go low. By
connecting the ROO NODE of one decade position to the
RIPPLE BLANKING input of the next decade position,
zero suppression can be achieved. This is discussed in detail FIGURE 4. TIL3061nterconnections for
in a later portion of this report, Counter Circuit Asynchronous-Counting Mode and
Description. The RBO NODE has a resistor pullup, which Low-Order-Zero Suppression.
allows this output to be used as an input. A low level
COUNTER CIRCUIT DESCRIPTION
applied to ROO will blank the LED display independently
of other input. The counter is a major constituent in digital instru-
ments. Digital voltmeters, frequency counters, event
The TlL308 looks physically identical to the counters, and period counters all have a circuit in common,
TIL306. flowever, the TIL306 contains a counter section: very much like the one shown in Figure 4.
the TlL30S does not. The TlL308 accepts 8-4-2-1 BCD The circuit to be discussed in detail in this report
code from external sources, stores it in latches, and displays incorporates both the TIL306 and the TIL308. One of the
the stored character by means of an LED display. As shown limiting factors of the TiL306 is that the counter typically
in Figure 2, the TI L308 consists of the three major does not count faster than 18 MHz. Combining the TlL306
sections: latch, decoder/driver, and LED display. with a TIL308 and feeding the TlL308 from a high-speed
The inputs and outputs, designed to be TTL counter expands the system to a much higher frequency.
compatible, consist of DATA INPUTS, DATA OUTPUTS, Figure 5 shows a BCD counter capable of working at
LATCH STROBE, BLANKING, and LED TEST. 100 MHz. The circuit consists of two SN74S 112 Schottky
The BCD data and decimal point on the DATA
INPUT lines are transferred into the latch flip-flops when
LATCH STROBE is low. The BCD data and decimal point
data stored in the latches are available at DATA OUTPUT.
With LATCH STROBE high the DATA INPUT lines can
change without effecting the data stored in the latches.
BLANKING must be high to display the data stored
in the latches. When BLANKING goes low, the decoder
drivers are inhibited and LED display is turned off. The
data stored in the latches are not effected by BLANKING.
LED TEST can be used to test the LED display. A
low to LED TEST will override all other signals and turn all
of the LEDs on. LED TEST does not change the status of FIGURE 5. /00 MHz Decade Counter Using Texas Intru-
the latches. ments Schottky ITL Logic and A TIL308 Display.
With the basic operation of the circuits outlined, two
VI
typical interconnection methods are shown in Figure 3 TTL circuits and one SN74S II Schottky TTL circuit. This C
and 4. Figure 3 shows the TIL306 connected in the configuration results in an asynchronous BCD counter o
synchronous mode. Figure 4 shows the TIL306 in the capable of dividing a 100-Mflz signal down to 10 MHz. The '';::;
asynchronous mode. The asynchronous mode will be used speed is a result of Texas Instruments Schottky TTL CO
()
in the following example of a counter. devices that allow flip-flops to toggle in excess of
100 MHz. The Q outputs of the four flip-flops are fed into Q.
Q,
one TIL308, resulting in a decade with readout. The
following decade position consists of a TIL306, which is «
II
capable of handling the 10 MHz rate. This circuit can be
expanded even further by preceeding the Schottky counter
stage with an EeL counter stage. ECL IC flip-flops with a
4OO-MHz toggle rate and discrete built EeL flip-flops with a
toggle rate of 800 MHz are possible. Figure 6 shows a block
diagram of a stage which is capable of counting up to
800 MHz. Since ECL levels do not cciincide with TTL
levels, an ECL-TTL converter is necessary. The output of
FIGURE 3. T1L306 Interconnections j,,,
Synchronous- the converter will drive the TIL308 without any
Count Mode and High-Order-Zero interference caused by switching speed problems.
Suppression.
7-15
LATCH STROBE TlL306 devices shows a big empty surface in the middle of
STRB
I the board and considerably fewer interconnects to the
display. The cost savings resulting from using such a
,-------jA counter are quite obvious.
Figure 9 is a photo of a IOO-MHz counter using seven
TlL306 devices and two TlL308 devices. A compact
assembly technique reduced the total size.
LSB
·-fi.':.::'.
~ _~J
J 0
COUNT
ClK
CONTROL
K K
FIGURE 6. BOO-MHz Decade Counter Using ECL Logic

and A TIL30B Display. FIGURE 7. Nine-Digit Counter
A B
FIGURE B. Two Counters with Identical Performance. Counter (A) Uses TfL306 Devices; Counter (B) Does not. Note how
many less Components are Needed in the Counter Using TIL306 Devices.
Figure 7 is a block diagram representation of a

nine-digit readout, consisting of an Eel decade counter
with a Tll308 display and a Schottky TTL decade counter
•
with a TIL308 display, asjust described, and seven TlL306
devices. Part count is minimal, and the complexity of the
PC Board is minimized.
Figure 8 is a photo of two counters with identical

performance illustrating the difference in component count
between a conventional counter consisting of SN7490,
SN7475, and SN7447 TTL integrated circuits, resistors,
with a display using Tll302 devices, and a counter using
TlL306 devices. Both counters are specified to operate up FIGURE 9. A Portable IOO-MHz Counter Using Seven
to 15 MHz, using a six-digit readout. The counter using TfL306 Devices.
7-16
Figure 10 shows all of the basic circuit boards and in Figure 5 and seven TlL306 devices. This counter is
components used in the counter shown in Figure 9 and capable of measuring frequencies up to 100 MHz and lime
shown schematically in Figure 12. The upper board is wilh lO-nanosecond resolution. Again minimum parI counl
timebase. The center board is control. The bottom board is and simplicily have been Ihe major objectives. The unit is
counter and display. universal and the counler can be expanded inlo olher
funclions by adding circuils 10 the basic building block.
~'. . ~~
-----~ ,,""" ~~-

.' .
.. . ~:, -
,~;;f"., •• _. ~
~)~ ..... ., » "" lit ..
~ft1~*".,*.ilrM
~ ~ . .-
'" . ~'. ,,,' ;;
FIGURE 10. The Three Basic Circuit Boards FIGURE I I. The Three Basic Circuit Boards Fastened
of the Portable Counter. Together into A Compact, High-Density Unit
EIGHT STAG~SOF S'I1490DECADE COUNTERS
A
CIJ
t:
o
';;
CO
(.)
C.
Q.
«
FIGURE 12. Schematic of A Frequency and Time Counter
Figure II shows the assembly technique for high

density component packing. The total size is 1.2 inches
high, 1.2 inches deep and 4.25 inches wide. This counter The counter has three main functional sections:
II
can be incorporated in a lightweight and portable timebase, control, and counter.
instrument. Total power dissipation is 9 watts.
The top part of Figure 12 is the time base. A IO-MHz
Figure 12 shows a complete schematic of a frequency oscillator is formed using two SN74H04 TTL high-speed
and time counter incorporating the 100-MHz stage shown inverters. The output is coupled through a third inverter to
7-17
isolate the oscillator from the rest of the circuit. exceeding I mA when, R4 is turned to zero. Once the
Capacitor C I is a coarse adjust and capacitor C2 is a fine charge across C4 reaches the firing potential of the
adjust. C2 should be a piston capacitor to allow finer unijunction, T2, the unijunction generates a positive pulse
resolution during adjustment. For more accurate at Base 2, which is coupled into the monostable
requirements, a separate oscillator in a multivibrator, SN74123. The positive pulse determined by
temperature-controlled oven with AGe circuitry can R7C6, 150 nanoseconds wide, is inverted by an inverter, 1/6
replace this circuit. The output of the oscillator is fed into a of SN74H04, and applied to the reset input of the TIL306
divider chain consisting of eight SN7490 decade dividers. devices, the four F/Fs of the first counter stage, and the
Timing signals from 10 MHz' to 0.1 Hz are generated and two F/Fs in the control section. With F/F I and F/F2 reset
switch selectable as the time base. In the middle of the the JK inputs are reset to a high level by FIF2 and the
schematic in Figure 10 is the control circuit. The purpose circuit ,is again ready to handle the incoming signa\.
of the control circuit is to gate the counter, and to generate The bottom part of the schematic in Figure 10 shows
latch strobe, and reset signals. the counter section. The first stage is made up of two
The input of FIF I is the time base signal in the SN74SIl2, one SN74S1 I, and one TIL308. The two
frequency measuring mode or the unknown time period in SN74SIl2 circuits and one SN74SI1 circuit form a decade
the time measuring mode. counter consisting of four flip-flops and one gate. Schottky
With all circuits reset, the Q output of F IF2 holds a TTL devices are used because of the speed requirement. If
high level at the JK inputs of F IF I. With a pulse coming only a 70-MHz counting rate is reqUired, this circuit could
into the F/FI, Q of F/FI changes from 0 to I on the be a single SN74196 circuit. The Q output of the fourth
negative·going edge. This I is applied to the first stage of F/F is connected to the clock input of the first TIL306.
the counter, allowing it to count. F IF2 does not change The maximum count of the TIL306 is coimected to the
state since it changes only on a negativeiloing edge. With clock input of the next TIL306. This operation is the
the next pulse to the clock input of F IF I, F IF I changes asynchronous mode, which is acceptable for counter
state on the negativeiloing edge, changing the Q output purposes.
from logical I to logical zero. This negativeiloing transition The counter is controlled by the two inputs to the
sets FIF2 and at the same time stops the counter from first FIF of the first decade. The clock input is the
counting. With F IF2 set, Q of F IF2 is a O. A 0 at the JK unknown frequency in the frequency mode, or the known
inputs of FIF I inhibits change with any additional pulses time pulses from'the time base in the time-measuring mode,
coming into its clock input. The Q output of F IF2 is The JK inputs are connected to the Q output of the control
connected to the input of a monostable multivibrator, 1/2 F/F, .This signal gates the counter. As already explained, a
SN74123. This multivibrator generates a short high level to the JK inputs allows the F/Fto change state
positive·going pulse at the Q output. The pulse width is on a negative edge of a pulse applied to the clock input,
determined by the RC combination R6C5 and is set in this With the JK inputs low, the clock input does not affect the
application to 150 nanoseconds. The output signal is F/F,
inverted and applied to the Latch Strobe inputs of the To complete the operation of the counter, the Latch
TIL306 and TIL308 devices. This pulse transfers the data Strobe and the Reset are applied to the circuit as shown. S3
from the counters into the latches to be displayed. allows choosing between suppression or displaying of zeroes
The Qof FIF2 is connected to the JK inputs of F IF I to the left of the most significant digit, With the switch
and also through a resistor to transistor T I. During closed, a ground is applied to the ripple blanking input of
counting operation 02 is high, turning T\ on and the most significant digit. If this digit is a zero, the display
preventing C4 from charging. At the end of the count cycle, is blanked and the ripple blanking output goes zero, This
the 02 is low, turning T\ off. The capacitor C4 begins output is connected to the next digit al)d the process
charging through resistors R4 and R5. R4 is adjustable and repeated until all leading zeroes are suppressed, If switch S3
allows a variation in the display time. R5 prevents the is opened the high-order 'zeroes are displayed. All that is
charging current and the current through T I from necessary for operation of the counter now is to provide a
power supply and a signal to be counted,
•
7-18
OPTOCOUPLERS IN CIRCUITS
optocouplers in circuits are shown for both devices since they are used to
determine the rise and fall times of the output current
There are many situations in which information must
waveform. Because a relatively large transistor base
be transmitted between switching circuits electrically
area is necessary for increased sensor efficiency, the
isolated from each other. This isolation has been
collector-base junction capacitance is fairly large.
commonly provided by relays, isolation transformers,
and line drivers and receivers. There is, however,
another device that can be used quite effectively to INPUT OUTPUT
STAGE STAGE
solve these problems. This device is the optocoupler.
The need for the optocoupler is most prominent in \ I
ANODE~
~
COLLECTOR
areas where high voltage and noise isolation, as well
as small size, are considered important. By coupling
CATHODE3~
two systems together with the transmission of radiant _ BASE
energy (photons), the necessity for a common ground
is eliminated - the main purpose of the optocoupler EMITTER
- and the systems can be effectively isolated.
A 0--+--, , . . . - -.....- .....--0 C
Four Texas Instruments optocoupler devices, the
TIL 102, TIL1 03, TIL 120, and TIL121, are discussed -+
in this report. How these devices can be used in
INPUTS
OUTPUTS
various circuits to provide proper isolation in many
systems will be a key part of this discussion. There
are many circuit applications for optocouplers;
however, the ones offered in this report are just Ko--..._...J '---------0 B
several which can be of special use. Complete
FIGURE 1 . Terminal Connections and Equivalent
specifications tor these devices are not included here
Circuit for the TIL 1 02/TIL 103
but are available' elsewhere in this book.
description of an optocoupler ANODE
Basically, a Texas Instruments optocoupler consists INPUT

of a GaAs (gallium arsenide) infrared-emitting diode STAGE'
(IRED) as the . input stage and a silicon n-p-n CATHODE

phototransistor as the output stage. The coupling CIl
medium between diode and sensor is an infrared- A 0---"",-", !:
~
c
transmitting ("IR") glass, as used in the

TIL 1 02/TIL 103, TIL 120/TIL 121. Photons emitted
-+
CCB
...ca
.2
(.)
from the diode (emitter) have wavelengths of about INPUTS OUTPUTS
900 nanometers. The sensor transistor responds most
efficiently to photons having this same wavelength. CaE E
c..
c.
Consequently, the input and output devices are «
spectrally matched for optimum transfer
characteristics.
Equivalent circuits for the TIL 1 02/TIL 103 and

TIL 120/TIL 121 are shown in Figures 1 and 2. For both
families of devices, a current source between the
FIGURE 2. Terminal Connections and Equivalent
Circuit for the TIL 120/TIL 121
II
collector and base of the sensor is used to represent
the virtual base current generated by incident photons
striking the base. This base current is proportional to
the amount of radiation emitted from the diode. The
collector-base and base-emitter junction capacitances
7-19
characteristics of an optocoupler
100
To fully utilize the advantages offered by an :: VCE = 5 V
optocoupler, it is necessary that the circuit designer 40 IB=O
TA = 25'C /
become aware of some of its characteristics. The TIll03
difference in characteristics between the families is
attributed mainly to the difference in construction.
The characteristics most useful to the designer are as

II TI l102
follows:
1. High-voltage isolation. High-voltage isolation

between the inputs and outputs is obtained by the
physical separation between emitter and sensor.
This isolation is possibly the most important
advantage of the optocoupler. These devices can
withstand large potential differences, depending on
0.01
the type of coupling medium and construction of 0.1 0.4 4 10 40 100
the package. The IR glass separating the emitter IF-Input-Diode Forward Cur~ent (rnA)
and sensor in the TIL 102/TIL 103 and TIL 120/
TIL 121 has an isolation capability of 1000 V. The FIGURE 3. Typical Input/Output Current
isolation resistance is greater than 10 12 O. Relationship for the TIL 1 02/TiL 103
2. Noise isolation. Electrical noise in digital signals
received at the input of the optocoupler is isolated
from the output by the coupling medium. Since the
input is a diode, common-mode noise is rejected. 100
VeE -5 V
3. Current gain. The current gain (output current/input 40 TA=25'e
current) of an optocoupler is largely determined by <"
the efficiency of the n-p-n sensor and by the type ! 10 TIL121 ~
of transmission medium used. For the TIL 103, the
~
current gain is greater than unity, which in many a 4
Tll120-
cases eliminates the need for current amplifiers in 5
~ 1/
the output. However, both the TIL 102/TIL 103 and
'0
TIL 120/TIL 121 have output current levels that are <.>
0.4
compatible with inputs of digital integrated circuits ~ If
such as 54/74 TTL. Figures 3 and 4 show typical "2
input-to-output current relationships.
4. Small size. The dimensions of these devices enable
i
.c 0.04
~
0.1
I
them to be used on standard printed-wiring boards. ~
The TIL 102/TIL 103 and TIL 120/TIL 121 are built 0.01 Ih
0.1 0.4 4 10 40 100
in a metal can similar to a transistor package. The
I F-Input-Diode Forward Current (rnA)
physical dimensions of these packages are shown
in Figures 5 and 6. FIGURE 4. Typical Input/Output Current
These are some of the prime characteristics of an Relationship for the TIL120/TIL121
optocoupler that can be used effectively to isolate two
systems .
•
7-20
,......,..--....- - 0 +5 V
!kn !kn
TI11021T1 L 103
OR
TI L 1201TI1121
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICAll Y IN INCHES

INPUT
FIGURE 5. Dimensions of the TIL 102/T1L 103
THE COLLECTDR IS IN ELECTRICAL CONTACT WITH THE CASE
4LEADSO.483(0.0191D1A
U;lg~~O''''lo.o''l=
1.1 NON·INVERTING FUNCTION
..-"'--"'-0+5 V
4,96(0.1951
4,62(0.1781 c::J' TlL1021T1L103
01.
OR
-'-- ~ 1kn
0'7~0301--ItJ
TIL120ITILI21
5.B4102301
0--,
4.31(0.2091
DI.
12,7(0.5001
MIN INPUT
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICAllY IN INCHE$.
FIGURE 6. Dimensions of the TIL 120/TlL 121
typical circuit applications

1kn
The characteristics anp advantages of an optocoupler
enable the designer to use it in a wide range of circuit
applications. Important among the applications of an
optocoupler are those involving 54/74 TTL and similar Ibl INVERTING FUNCTION
digital integrated-circuit families. As was mentioned
previously, an optocoupler has output currents FIGURE 7. Schmitt Trigger Coupling Optocoupler
compatible with TTL inputs. This compatibility enables to 54/74 TTl Inputs
it to be especially attractive as an interface element
between digital systems. The device is particularly trigger as shown in Figure 8. For this circuit,
beneficial in applications where high voltage regeneration or positive feedback is provided by the
differences may exist between systems. However, it coupled emitters of Oland 02. The output of this
is not limited only to digital applications, as shown by circuit is noninverting and is compatible with TTL
the following examples. logic.
rJ)
Another Schmitt trigger utilizing discrete components C
driving 54/74 TTL o
that makes use of the base connection of the
".j:j
An effective method of coupling an optocoupler to TTL TIL 102/TIL 103 is shown in Figure g. In this circuit,
CO
circuitry is by using a Schmitt trigger that has an positive feedback is provided from the collector of 02
output level compatible with standard TTL devices.
.52
to the base of 01. Resistor Rl limits the base current
c.
By coupling any of the Texas Instruments opto- to Oland keeps the device off when there is no signal c.
couplers to the SN7413, as shown in Figure 7, the at the emitter. As with the circuit in Figure 8, the <t
isolated signal at the input can be converted to TTL output of this circuit is non inverting and compatible
logic levels. Noise immunity is provided by the coupler with TTL levels.
as well as by the threshold level of the SN7413.
transmission-line isolator
The optocoupler can also be employed as part of a
Schmitt trigger circuit that utilizes discrete By using an optocoupler between two systems
components. Because the output of the optocoupler coupled by a transmission line, effective line isolation
is a transistor, it can be used as the input stage to the can be achieved. Figure 10 shows a typical interface
7-21
of the transistor. At the receiving end of the line, the
12kn
phototransistor is coupled to an SN741 3 for fast pulse
generation. The output of this system is a noninverted
pulse. However, by rearranging the optocoupler and
the SN7413 as shown in Figure 7(a), the output may
be inverted.
As simple as it seems, employing an optocoupler this

way ~rovides isolation for both noise and high voltage.
An isolation transformer or relay could accomplish the
task, but it would not be as fast as the optocoupler.
Also, a line driver and receiver combination could be
510n used to eliminate the noise and increase the speed,
1 kn but it would be very ineffective if there were high
potential differences between the input and output.
solid-state relay
FIGURE 8. Optocoupler with Discrete-Component Through the use of transistor circuits, mechanical
Schmitt Trigger for Driving 54/74 TTL relays are slowly being replaced by solid-state relays.
In some cases, the solid-state relay (SSR) offers
distinct advantages over its mechanical counterpart.
For example, an SSR has the advantage that it has
neither moving parts nor fragile wires, and it has faster
switching speeds and longer operating life. However,
one disadvantage of an SSR is that it generally has
a lower degree of input/output isolation than a
mechanical relay. To overcome this disadvantage in
the SSR, an optocoupler can be used as the isolating
input stage as shown in the block diagram in
Figure 11. The control stage may consist of discrete
transistors or integrated circuits, while the output
FIGURE 9. TILl 02/TIL 103 in a Schmitt Trigger stage consists of high-power switching devices.
for Driving 54/74 TTL
A simple isolated latch circuit, which is somewhat of
an SSR, is shown in Figure 12. The output of the
+VCC2 optocoupler is used' to fire the SCR that provides
P
power to the load. To turn off the load current, the
rr"~-'--± supply voltage VCC2 must be removed.
lr~'
___ I TIL' ' 'O' '2.r1T: -~: -~: -'0: -3~ - L-/ INPUT OUTPUT
1 kn 1
INPUT I OR CONTROL OUTPUT
1/2S:;-~50 - - - TlLI20/TILI21 STAGE STAGE
20n
:r
G, G2
FIGURE 10. Typical Transmission Line Isolator
FIGURE 11. Typical Solid-Stata Relay Using an
system using TTL integrated circuitry coupled by a Optocoupler
twisted-pair line. The SN75450B is the input stage
isolated chopper circuit
driving the transmission line and emitter of the opto-
coupler. The IRED requires about ~O mA during "turn'- Chopper circuits that use mechanical relays suffer
on," which is well below the maximum current rating from a speed problem as well as switching transients
7-22
TIC44
FIGURE 14. Isolated Pulse Amplifier Using

FIGURE 12. Solid-State Latch Using a Optocoupler uA 7 41
TIL 120/TIL121 Operational Amplifier
at the load. By using bipolar transistors or FETs as the pulse appearing at the anode of the IRED. The gain
series and shunt switching elements, the speed may of this circuit is controlled by the feedback resistor
be improved; but capacitive coupling to the switching RF. An amplifier employing discrete components and
circuitry may still produce transient "spikes" on the that uses the TIL 1 02/TIL 103 as part of the current
output signal. By using an optocoupler to switch the feedback pair is shown in Figure 15. The feedback
input signal as shown in Figure 13, the switching resistor R 1 controls the current gain as well as the
circuitry can be isolated from the output, thereby output d-c level.
+Vcc Figure 16 shows an optocoupler with a voltage-

feedback amplifier that has a gain of 1 + R2/R1 . This
type of amplifier offers high input impedance, which
will not load the emitter of the sensor transistor.
FIGURE 15. Discrete-Component Pulse Amplifier

CONTROL with TILl 02/TIL1 03
SIGNAL
II)
FIGURE 13. Chopper Circuit Using Optocouplers c::
o
"+="
P
reducing output "spikes". The use of two couplers C'O
in the configuration shown· allows chopping of either
A74t
"~
positive or negative input signals with a frequency of
.• o~"' C.
one-half that of the input to the flip-flop. The c.
uA 741 operational amplifier is used to increase the
output signal with a gain of R2/R1.
1kn
«
pulse amplifiers
Pulse amplification, as well as isolation, can be

achieved by using an optocoupler with a pulse
Rt
R2
II
amplifier. The circuit shown in Figure 14 uses an FIGURE 16. Voltage-Feedback Pulse Amplifier
isolator with a uA 7 41 operational amplifier to amplify with Optocoupler
7-23
7-24
Interfacing Using Optocouplers
Description
A very useful application of optocouplers is in the interface between different families
of digital logic circuits. The worst-case design process should include consideration of
data rates, power supply variations, component tolerances, and temperature ranges as well
as the characteristics of the digital logic families. Consider the general circuit of Figure 1.
VCC2
VCC1
IR2l R2
R1
IF1l rOPTOCQUPLER l IOH2 and IOL2

.--
IIH2 AND IIL2
~
i ~
~
i
VOL2
i
VIH2 and VIL2
GATE
2
1 1
.J
NOTE: VOL2 = low-level output voltage of coupler when coupler is on.

VIL2 = low-level input voltage specified for GATE 2.
III
Figure 1. Optocoupler Interface Circuit c:
o
'';:;
~
When the output of logic circuit 1 is low (VaLl), the output of the optocoupler (.)
is also low (VOL2). Since VOL2 is the input to logic circuit 2, it must be less than the C.
Q.
maximum required logic low input voltage (VIL2), in order to hold logic circuit 2 in a <t
stable state. The criteria that must be met at this point is given in equation (1).
VOL2 (coupler) s VIL2(max) (logic circuit) (1) •

When the coupler output is in the low state, ,it must not only sink the current through
R2, IR2, but is must also sink any current required out of the logic circuit 2 input in order
to hold logic circuit 2 input to VIL2 or less.
7-25
Using the current directions specified in Figure 1 and with the conditions of
equation (1) satisfied, the conditions required for the coupler current, IOL2, can be
expressed as in equation (2).
IOL2 ~ IR2 - IL2 (2)
The first step in the design procedure is to select IFI, the forward current through
the emitter of the optocoupler. Then using equation (3), Rl is computed:
Rl = VCCl - VF1(typ) - VOL1(typ)

(3)
IF 1(typ)
A standard value resistor for Rl is selected as close to the value computed using
equation (3). A tolerance for this resistor is specified from which the maximum and
minimum values for Rl are computed using equations (4a) and (4b) as follows:
Rl(max) =
~ tOl)
Rl ~ + 100 (4a)
Rl(mm) = Rl~ - :~) (4b)
"tol" is the percent tolerance ofthe resistor. With the results of operations (4a) and (4b),
the maximum and minimum values ofIFI and be determined using equations (5a) and (5b).
I _ VCC1(max) - VF1(min) - VOL1(min)

Fl(max) - Rl(min) (5a)
»
"C
I . _ VCCl(min) - VFl(max) - VOL1(max)
(5b)
"C Fl(mm) - Rl(max)
n'
QI The output current of the coupler depends on the current transfer ratio (CTR) of
!:!"
o the device. CTR is defined by equation (6a) as the coupler output current, IOL2, divided
~ by the forward current, IF1, of the coupler diode emitter .
• CTR = IOL2
IF!
(6a)
If CTR is not given as a data sheet parameter, it can be calculated from other data sheet
specifications [e.g., IC(on) at a certain IF] or from curves ofIOL (sometimes called IC)
versus IF given in the data sheet. In many cases, CTR will be a number less than one,
in other cases it will be greater than 1.
7-26
Using equation (6a) with CTR converted to a percent, the coupler collector current
can be computed using equation (6b).
I . _ (% CTR) X IF1(min)
OL2(mm) - 100 (6b)
The minimum value for R2 can be calculated using equation (7).
R2(min) VCC2(max) - VOL2(max)

= (7)
IOL2(max) + IL2(max)
The maximum value of R2 is determined from the condition that exists when the
optocoupler output transistor is in the off state. Under these conditions, any off-state current,
IOH, and any current into the input of gate 2 must not drop the voltage across R2 to the
point where the input to gate 2 goes below its required high-level limit value, VIH. These
limit conditions are expressed in equation (8), again using Figure 1. IOH2 is the current
into the output collector and IIH2 is the input current to gate 2 when the gate input is
at a voltage equal to or greater than the VIH(min) voltage required. IOH2(max), VIH(min),
and IIH2(max) are taken from data sheet specifications.
R2(max) = VCC2(min) - VIH2(min) (8)

IOH2(max) + IIH2(max)
R2 is selected between the limits of R2(min) and R2(max). Capacitive effects on
response time are less when R2 is closer to R2(min), while maintaining the low-Iogic-
level voltage, VIL2. As the CTR of the optocoupler degrades, correct circuit operation
will be maintained longer with R2 closer to R2(max). Final selection depends on which
parameter is more important in the application.
Example Number 1
(/l
In Figure 2, a 4N25 optocoupler is to be driven by an SN7404 gate output and will t:
drive the input of an SN7400 gate. The specifications for the logic levels and input and o
';::
output currents for the Series 74 logic family are given in Table 1. co
,~
Q.
c.
c:s:
II
7-27
Vee = 5 V-.,.----...------------~..._--__.
Rl R2 1 kn
4N25
OPToeOUPlER
r-----'
I I IOl2 IIl2
+-:-- ~
i
VOl2 Vll2
i SN7400
1-= 1
...J
NOTE: VOl2 = low-level output voltage of coupler when coupler is on.

VIL2 = low-level input voltage specified for SN7400.
Figure 2. Optocoupler Interface Circuit
Table 1. Series 74 Family Data

TTl Vll III VIH IIH VOL IOl VOH IOH
Family -V mA V p.A V mA V p.A
74 0.8 -1.6 2 40 0.4 16 2.4 -400
74ALS 0.8 -0.1 2 20 O.S 8 2.4 -400
74AS 0.8 -O.S 2 20 O.S 20 2.S -2000
74LS 0.8 -0.3 2 20 0.5 8 2.7 -400
74S 0.8 -2 2 50 0.5 20 2.7 -1000
For the particular calculations, the values in Table 2 will be used.
Table 2. Calculation Values

TTl 4N25 POWER SUPPLY
VIH(rnin) = 2 V CTR(rnin) = 20% Vcc = 5V ±5%
VIL(rnax) = 0.8 V VF(rnin) = 1.2 V @ 10 rnA
II
IIH(rnax) = 40 p.A VF(typ) = 1.25 V @ 10 rnA
IIL(rnax) = -1.6 rnA VF(rnax) = 1.S V @ 10 rnA
IOH(rnax) = 400 p.A IOH(rnax) = SO nA
VOL(typ) = 0.2 V VOL(rnax) = 0.5 V
VOL(rnax) = 0.4 V
7-28
Calculations
1) Select IF = 20 rnA
2) Check equation (1)
VOLCcoupler) :5 VIL2 (logic circuit) 0.5 V :5 0.8 V. It checks.
3) From equation (3), assuming the VF at 20 milliamperes is not 0.05 volt
greater than the value at 10 milliamperes.
Rl = 5 -1.25 -0.2
20 rnA
Rl = 1780
4) Select standard value R 1 1800 ± 10%.
Therefore,
Rl(max) 180 + 18 = 198 0
R1(min) 180 - 18 = 172 0
5) From equations (Sa) and (5b), using VOL(typ) = 0.2 V for VOL(min)
I = (5.25 -1.2 V -0.2) V = 21 38 rnA

F1(max) 171 0 .
I . = (4.75-1.5 V-O.4) V = 1439 rnA

F1(mm) 198 0 .
6) The maximum current [lOL2(max)1 that can be allowed to flow through the
coupler output is determined by the minimum current the coupler can supply
according to equation (6b), thus III
~
o
"';:;
14.39 mAx20 CtI
(.)
IOL2(max) = = 2.878 rnA
100 0.
Q.
7) From equation (7), <t
R2(min) = (5.25 -0.5) V

2.878 rnA +( -1.6 rnA)
3.72 kO
II
8) From equation (8),
R2(max) = 4.75 -2 = 68.66 kO

50 nA+40 p.A
7-29
8) From equation (8),
R2(max) = 4.75 -2 = 68.66 kO

. 50 nA+40 /LA
A choice of 4.7 0 ± 10% for R2 is suitable for this design.
Example Number 2
A similar approach can be used when interfacing discrete phototransistors to digital
logic circuits. Consider a TIL602 connected in the phototransistor mode to an SN7400
as shown in Figure 3. The data for this situation is shown in Table 3.
Vcc= 5V
1 kn
~
'T
i V,i
10 SN7400
TIL602
--+ Vo
--+
1 1
Figure 3. Phototransistor Interface Circuit
Table 3. Calculation Values

SN7400 TIL602 POWER SUPPLY
»
'C
V,H(rnin) = 2 V 'D = 3 p.A (dark current) Vee'" 5 V ± 5%
'C V,L(rnax) = 0.8 V IOH = 'D + (1 -n/l00) 'OL
',H(rnax) = 40 pA (where n = % light blocked)
"
Q)
r+ ',L(rnax) = - 1.6 rnA VOL(rnax) = 0.8 V
o· 'OH(rnax) = 40 p.A 'OL(rnin) = 2 rnA
:J
C/l VOL(typ) = 0.2 V
VOL(rnax) = O.4V
7-30
Calculations
In this application, the equations before equation (7) are ignored. From equations (7)
and (8), the values for R2(min) and R2(max) can be calculated. This application is very
sensitive to ambient light. Therefore, care must be taken to shield out ambient light.
Assuming 95 % of the ambient light is shielded out,
R . - 5.25-0.8 = 4.45 V = 11.1kO

L(mm) - 2 rnA + ( - 1.6 rnA) 0.4 rnA
R (4.75 -2.0) V
L(max) = IOH +40 p.A
Substituting IOH = ID + [1 - (n/lOO)] IOL, where n = 95 %

RL(max) = - - - - 94.75 -2.0
-5------
3 p.A+(1--) 2 mA+40 p.A
100
2.75 V
3 p.A+lOO p.A+40 p.A
2.75 V
143 p.A
= 19.2 kO
RL is chosen as a standard value, 14.7 kO.

Example Number 3 U)
I:
If the 74LS series is used with 80% light blocked, from Table 1 IIL(max) = 0.36 rnA o
'.j:j
instead of 1.6 rnA and IIH(max) = 20 p.A instead of 40 p.A. co
.2
Q.
R = 4.75 -2 = 65 kO Q.
L(max) 3 p.A + (1- 80/100) 2 rnA + 20 p.A . <t
and
R . - 5.25-0.8 271 kO
II
L(mm) - 2 mA+(-0.36 rnA) =. u
Therefore, RL can be selected between 2.71 kO and 6.5 kO.
7-31
7-32
CCD OUTPUT SIGNAL PROCESSING
This application report presents a variety of methods, along The minimum reset-time interruption in each data-pulse
with circuit examples, of converting the CCO output pulse- is 50 ns. Since the duration of each data-pulse decreases as
train into usable analog or digital video data. A general block the frequency (number of data-pulses per second) increases,
diagram of a complete CCO operating system from clock- the percentage of data time occupied by the reset pulse is
drive control through processed signal to output video is variable. For frequencies between 5 MHz and 10 MHz, the
provided in Figure I. Figure I illustrates four methods of percentage varies between 25 and 50 %. As the rise and fall
obtaining analog or digital video. To understand these times are approximately 10 ns, this percentage increases as
methods, a discussion of CCO output signal with respect to the duration of the data-pulse decreases. Figure 2 shows an
the desired video output and the data rates is first required. example of the output of a TC 101 operated at 10 MHz. The
After the output signal discussion, each of the methods is negative (lower) output voltage waveform is 50 ns or 50%.
described in detail. This time is not always obtainable; however, even at 25 ns,
a good output can be processed.
Output Signal Considerations An example of this low duty cycle is shown in the area
The normal unprocessed CCO output signal is a voltage output of the CCO at 7 MHz (see Figure 3). Ringing is
pulse-train in which the negative (lower) envelope represents another factor that can reduce the true-data time. Ringing
analog video and its positive (upper) envelope is the result is caused by the reset and transport clocks. This problem
of the positive-going reset clock. This upper envelope is can be greatly reduced in the following ways:
generally uniform and is generally representative of the zero 1. Making the high-to-Iow transition of the reset
or dark signal. The entire voltage pulse-train is displaced clock coincide with the transition of the transport
from zero volts by the positive quiescent-output operating clock.
voltage of the charge-detection amplifier. This output 2. Use 10 (} to 20 (} series transport-clock drive
operating voltage is guaranteed to be above 5 V but less than resistors and 50 (} to 80 (} reset-clock series
the amplifier drain supply, VDD. resistors.
OPERATING REQUIREMENTS CCO SIGNAL PROCESSING OPTIONS

3. Using the shortest possible leads, return the
clock-driver positive and negative supply bypass
capacitors (1 p.F for negative and 0.1 p.F for
positive) to the substrate pin (VSS) nearest the
transport or signal-clock pins and by connecting
the PC board ground plane to the VSS pin.
>
For data operating frequencies below 2 MHz, the data
pulse is wider and the percentage of reset interruption is ~
E
reduced (can be 10% or less) and the problem of reduced g
true data-time decreases (see Figure 4). The CCD output N
waveforms shown in Figures 2 through 4 cover the data-rate

range and lay the groundwork for a discussion of output video
requirements.
Positive analog video is a continuously varying signal
with white more positive than black. Black should be 0.1 V
or less above O. In the CCD output, the envelope of the pulse
train is negative video (white is the negative direction).
Figure 4. High Duty Cycle Output
(0.5 MHz) Signal
Inversion is required after the negative envelope is detected.

Also, the black level is the smallest negative output. Since
it can be inverted at any time, the signal should be processed
as negative video and inverted after processing. This black-
level voltage is the reference for all the gray shades of
negative voltage below it. The reference level is still needed
even if only threshold detection is the required output.
Becausl' the output signal dc operating voltage is
variable, a level shift technique that can be keyed to the black
level of the CCD output signal is required to establish the
desired stable reference. Therefore, all signal processing
methods in Figure 1 start with a level shift and black level
clamp circuit. Figure 5 shows the level shift accomplished
by a coupling capacitor that is large enough so that no
significant change in charge occurs during a video-line
Figure 2. TCI0l Output Sigual,
readout time. Four black reference pulses are placed before
High-Frequency (10 MHz) Operation
OUTPUT r--:'--.,
SIGNAL HIGH-INPUT
Z AT LOW
CCO FREQUENCY
BLACK LEVEL ~ OUTPUT

VOLTAGE SWITCH
UNITY
GAIN
Figure 5. Low-Level Shift and

Black Level Clamp Block Diagram
and after four isolation pulses at the beginning and end of

the data pulse train. This is done so that, during these black
reference pulses, the switch closes so the charge on the
capacitor is cla~ped during the black reference output time
of the CCD. The output of the amplifier then becomes the
black reference voltage. This method of restoring black to
Figure 3. Low Duty Cycle Output a video data line is called line' clamping. This method is
(7.16 MHz) Signal widely used in video circuit design.
7-34
Another method of providing the level shift and black of the comparator. Also, the charge current sent to the storage
level clamp employs a programmable reference diode, the capacitor is the difference between the current from the
TI TlA31 C (see Figure 6). This method is unique in that 22 M(l resistor and the current from the 2N3904 voltage-
it is all direct-coupled and therefore must have automatic to-current converter for the comparator. The l-I'F
drift-correction for the shift in CCD amplifier dc output comparator provides good ac coupling.
voltage, as well as for other temperature induced component
drifts. Threshold Detection
However, like the line-clamped capacitor method, this The preceding discussion covers the subjects of level
circuit stores a charge on the capacitor, C. The charge on shift black-level clamp. The following is a discussion of the
the capacitor determines the output black reference voltage various methods of signal processing. The first method as
for the period of one readout line. The basic components in shown in Figure 1 is threshold detection. The threshold-type
the simplified schematic shown in Figure 6 operate as processor consists of the following three main elements:
described in the following paragraphs. I. The level shift and black-level clamp circuit (see
The major output signal path begins with the output Figure 7)
voltage of the CCD being applied to the base of the signal- 2. A comparator with a negative threshold reference
buffer emitter follower (2N3904). The path proceeds through 3. A data-clocked D Type flip-flop to act as a
the programmable reference diodes and ends at the level- sample-and-hold.
shifted output. A load resistor and a negative supply provide This threshold-type processor has a true TTL output
the operating current so that the output black level can be that is zero for gray shades darker than the preset threshold
zero or negative if desired. The FET resistor divider controls and a one for gray shades lighter than that threshold (see
the voltage drop through the reference diode and the FET Figure 8). The timing of the black-level strobe and the data
capacitor provides a temporary memory for the gate bias of clock for the flip-flop is important in getting correct
the FET over a line period. The comparator automatically operation. A complete circuit for a TC 102 is presented in
controls the output for correct FET gate bias voltage. Thus Figure 9, starting with a master clock driving the timing logic
the reference diode drops the correct value so that the output with exposure control and finishing with CCD tlock drivers.
matches the set in black reference voltage during the black The clock oscillator frequency sets the data rate and
reference pulse in the output signal train, which is the strobe the monos table multi vibrator triggered by the clock sets the
time for the comparator. The comparator is strobed on for reset clock pulse duration. Dividing the clock oscillator
each of the four black reference pulses so that, during each output by two produces the transport clock signal for each
pulse, charge current to the storage capacitor makes needed transport clock cycle. This signal goes to the preset input
corrections. In this manner, the comparator automatically of the second flip-flop. There it is synchronously released
tracks changes to maintain the desired black reference output to the clock-driver level translation transistor on command
voltage. by the borrow output of the exposure-time down-counter
In the actual circuit (Figur~ 7), the black level is chain to the clock input of the flip-flop.
clamped to zero volts within the limits of the offset voltage
VDD
CI)
CCD c:
..JlJL1UL BLACK REFERENCE
CLAMP PULSES
...
.2
('1:1
CJ
C.
BLACK REFERENCE Co
TL431C VOLTAGE INPUT <X:
PROGRAMMABLE
1.1
REFERENCE
DIODE
f-------~------------------~--OUTPUT
-V
Figure 6. Level-Shift and Black-Level Clamp with Automatic Drift Correction
7-35
Voo J----tt----------e---------....--- + 16 V
~ 0.11'F
cco
TOP VIEW
O.S.I-----4----------------I
510 [l O~G
S
+5 V
12 V
o
. .---.--+1--, S
B.L.
STROBE
1 k[l
,I TL431CLP
I
6
510 [J
= 750 [l
CCO OUTPUT
(BLACK REFERENCE
LEVEL SHIFTED
TO ZERO VOLTSI
510 !l
-5V-~__~--------------------~
Figure 7. CCD Output Level Shifting Circuit

(Black Level Clamp to 0 V)
A series of down-counters is used to generate the by changing the counter-timing method. Although the
exposure time and locate the exact time to send out the strobe counter-timer is a simple fixed-threshold-type processor, the
to comparator so the pulses will be placed during the principles are presented here so that variations can be worked
beginning black reference pulses in the output of the CCD. out.
The black-reference pulses start exactly on the twelfth data-
pulse, beginning with the pulse during the transfer clock Analog-to-Digital Flash Converter
period. Thus, the first down-counter is loaded with a count Another method of converting the output of the CCD
of eleven so that its borrow output will be at the end of the to digital can be accomplished by using a flash analog-to-
eleventh data-pulse. At this time, the latch changes state and digital (AID) converter. Once again, the problem of
triggers the second monostable multivibrator which sets the interfacing with the AID converter input requires the
gate-time for three or four black-level strobe pulses. These establishment of a black reference voltage representing all
pulses begin on the twelfth data-pulse. zeros in the digital output word. The capacity-coupled line-
A series of gates delay the opposite phase of the reset clamped form of level-shift and black-level clamp (see
clock from the clock oscillator to generate the basic strobe Figure 5), is used in an automatic form shown in Figure 11.
and data-clock pulses. The delay causes the timing to match To provide continuity and clarity in understanding the
II
closely that of the video chain and to fall COlTectly timed with automatic method, the complete level-shift and black line-
the data time of the video pulse (see Figure 10). The other clamp is explained again using Figure 12. Figure 12 shows
down-counter counts the bo~rows from the first counter and the CCD output signal pulse train with the dark reference
reloads on fourteen, thus giving a total count of 11 x 14 pulse located with four isolation pulses before and four
or 154 reset clocks between transfer clocks. In this counting isolation pulses after the optical data stream.
method only seven of the fourteen data-following pulses are Positive voltage is subtracted from the negative output
allowed to be read out. of the detector. This brings the input bias of the buffer
For the application in which this circuit is used, there amplifier to the correct level. When the clamp switch is
is no need for the remaining black reference pnlses or white closed, the output of the buffer amplifier is the desired black
reference pulses. However, they can be included, if desired, level (see Figure 13).
7-36
T ::!:: T T
CCD
VDDI
l' 0.1 ~F TOP VIEW
+16 V
O.S·I I D~G
S
510 {J
510 {J
1.0 ~F
1 k{J
~
TL431CLP
8" "'" 12 V
I
,. ,,/\ lN759
6
510 {J = 750 {J
=
510 {J
TRUE
THRESHOLD
ADJUST TTL
OUTPUT
Cl DATA
=1 k{l
510 {J COMP
1.B k{J
470 {J
1 O.l~F
Figure 8. CCD Threshold Type Processor
-..J
W
II
-..J
Applications
III suor.. e:>!lddv
10 kO
-..J 5V~
W 1 kn
00
veH
~ ~~"o
O.';F RCK
):, I~~
VeL
5V
CLOCK FOR DATA F/F

SN7474
5V
FREa~FREQ 15
ADJ 1-'10· kD- leONT 620
~xeK
11
SN75369
10 Vee
'150 pF
9 XCK
~5V L WRCK
y" SN74S74I TCK 'h SN74S74 b8;.. .::x::eK-iI____~
13
5V h
, 0.1 I'F-=
5V
~TeK
100
Figure 9. Timing Logic and CCD Clock Drivers

>
~
'"o
Figure 10. Comparator Strobe Pulse Timing with Output Signal
OUTPUT
SIGNAL
~----------------~------OUTPUT
CCD
COMPARATOR
S2
BLACK-LEVEL
SET (0 VI
Figure 11. CCD Output Signal Buffering Circuit and Automatic Black Reference Block Diagram
+10 V-
INPUT FROM VI
CCD
c:
o
.';:::;
OPEN CO
51 CLOSED
r-----------------~f~$----------------~--------_+I--- .~
I C.
I
BLACK LEVEL c.
CLAMP
I
I «
r--
•
CLOSED I
~~--;---------T_----------------~fr5----------------_1
S2 OPEN
1.-.---------1
BLACK LEVEL
SAMPLE
OV
Figure 12. Input/Output and Switch Timing for Automatic Wack Reference
7-39
FROM
OUTPUT
OFCCD
15 kll 300 II
-20 V +18V
GAIN - 0.95
+5 V
TRW A·TO·D CONVERTER
,*O.l/tF FLASH CONVERTER PULSE
51 II MODEL TDC1021 FROM LOGIC
BINARY
-= 1
2
AGND CONVERT
16
15
OUTPUTS
VIN D4LSB LSB 1
3 14
NC 03 2
4 1-3
-= 5
VRT 02
12
4
-1 V VRB D1 MSB MSB 8
6 11
-6V VEE DGND
O.l/tF-:I::' 7 10
0.1 /tF . -= O.l/tF,* 8
NLiNV VCC
9
-=
1 kll VRM NMINV *,O.l/tF
470 II
-=
1 kll 1 kll +5 V
~--~--------~-e--6V
*,O.l/tF
+5 V
4700 3V
OV
--u-
BLACK-LEVEL
SAMPLE FROM
+5V LOGIC
4.3 kO
510 II
BLACK
F---+~ LEVEL
SET
510 II
ALL PNP - 2N3906
3.3 kll 5.1 kll NPN - 2N3904
DIODES - lN4148
~---------4~--~~--------~--------6V
l ' 0.01 /t F
3V-,,-
OV U
BLACK·LEVEL CLAMP
FROM LOGIC
Figure 13. Automatic Black-Level Control and AID Converter
(0.1 to 10 MHz Operation)
The black-level clamp and black-level sample can be is used. It requires no external sample and hold because of
timed to occur during the same dark reference pulses time. its speed and design. The TOCI021 accepts a 0 to -1 V
However, the black-level clamp disturbs the signal and may input signal, requires a convert pulse to tell when the analog
cause some errors in the black-level sample. The control signal is to be converted, and is powered from + 5 V and
signals to S 1 and S2 are timed by the exposure-time counters - 6 V supplies. The convert pulse timing as related to the
so that the switches will be turned on and off at the exact output data of the CCO is important for correct AID
black reference pulse times. conversion.
The signal is now conditioned so that it will interface As specified in the TOC 1021 data sheet, the analog
with the A/O converter. For high speed conversion at amplitude data sample is read 10 ns after the 50% point of
10 MHz, the TRW TOCI021 4-bit parallel flash converter
7-40
the convert pulse rising edge. In addition, the pulse is a With the convert pulse timed correctly with the output data
positive going TTL amplitude and should be nominally 30-ns stream, the final result of the converted data is as shown in
in duration. From this condition, the convert pulse should Figure 16.
be decoded from the timing logic so its leading edge is 10 ns The optical input for the CCO is a uniformly
ahead of the desired sample point on the output pixel pulse illuminated seven-gray shaded and black test pattern. The
of the CCO. To approximate where to decode the convert input uses an incandescent source operated from direct
pulse, it is necessary to determine the time delay of the pixel current to prevent 60-cycle modulation. An IR filter cannot
pulse arriving at the analog input of the converter relative be used because there is not enough light output to produce
to the logic from which the convert pulse is to be decoded. a I-V CCO output. As a result of the IR plus visible light
The propagation delay time between the reset clock falling combined, the gray shades are not uniform changes in
edge and the pixel's falling edge is determined to be 15 ns intensity. However, this condition does not detract
(see Figure 14). significantly from the presentation. The A/O converter is set
The reset clock rising edge is located where the up for outputs of 0000 for a 0 V input and 1111 for a-I V
transport clock feedthrough starts to disturb the data pixel input. Therefore, an analog -0.067 V is equal to a one
(see Figure IS). Therefore, the convert pulse ends exactly binary bit state change.
where the reset pulse starts and exists 30 ns before that point. This AID method is for a linear CCO. However, it can
be used with an area CCO by altering the black-level sample
and black-level clamp to coincide with black reference pulses
or pixels from the data streams of the image sensor. A good
example of how black reference pixels of area image-sensors
are located in their output data streams is in the processor,
consisting of a low-pass video filter and amplifier.
Low-Pass Video Filter and Amplifier

The video information in the output signal from an area
image sensor [e.g., a closed circuit television (CCTV)
camera] can be extracted with black reference level (pedestal)
by a low-pass video-filter type processor. Such a processor
(see Figure 17) has an automatic black-level clamp very
similar to the scheme used with the AID converter. In
addition, it has an automatic video level control with
composite blanking and composite sync to form a near
standard composite monochrome video output signal.
The automatic black-level clamp is very similar to the
one used with the flash AID converter. The coupling
Figure 14. Conditioned CCO Output Signal capacitor and clamp transistor are the same and work into
(Reset Clock) a high input impedance amplifier with a positive gain of
approximately four. The video filter (LPF) with a low-pass
cutoff of 3.2 MHz (half the serial clock frequency) is driven
by this amplifier. The filter recovers the negative video VI
c::
envelope by taking an average of the negative voltage under o
the amplified output signal from the CCD. This computer- ....ctI
designed filter has a low-overshoot fast-cutoff characteristic ()
so that video up to 3.2 MHz is passed and the serial clock
> at 6.44 MHz is down 36 to 40 dB. In most cases, the video a.
~E has a low duty-cycle (see Figure 3). The ratio of time output c..
voltage is the video envelope value divided by time; it is at <C
g
IJ
N the reset voltage value.
This low duty-cycle makes the output signal of the filter
small compared to the peak-input signal (often 25 % or less).
Gain is required to produce a reasonable 0.75 V signal. This
arrangement works because positive video is required and
the amplifier can invert the video while amplifying. The
black-level sample is taken from the output of this amplifier
before it is blanked. In this circuit, two PNP emitter followers
share a common load resistor and serve as a switch. The
Figure 15. Conditioned CCD Output Signal
output is sent to a simple two-transistor comparator. The
(Converter Pulse)
7-41
CONDITIONED CCD
OUTPUT SIGNAL
4
BINARY
OUTPUTS
2
BLACK 2 3 4 5 6 7
Figure 16. Conditioned CCD Gray Shade Signal

and AID Converter Binary Outputs
comparator compares the level with an adjustable reference resistor at the low end (low gain) and by the shunt 33 kO
to provide output pedestal or black level setting. The positive- resistor at the high value (high gain). Oiode control current
going error pulses from the comparator are detected by the is obtained from the three transistor-comparator circuits
positive-peak detector and the current through the 8.2 kO which compare the average positive detected video signal
resistor is increased to provide the correct bias to the clamp with a gain level set reference. In this manner, automatic
transistor. This process causes the voltage across the 0.01 p.F control is accomplished.
coupling capacitor to be correct during the black reference Blanking is accomplished by placing a simple shunt
pixel time in the output signal of the CCO, so that the direct transistor switch where the positive TTL composite blanking
coupled amplifier-filter chains output is the desired pedestal signal is applied. The shunt transistor switch blocks the signal
level. to the output emitter follower. Composite sync is
Figure 18 shows the relative timing of the black-level accomplished by summing jl negative voltage produced by
clamp and the sample pulses supplied from the system timing the drop across a forward diode when it is switched into the
logic that are relative to the output signal of the CCO. In circuit by a transistor turned on by the TTL-level positive
addition, the horizontal blanking and sync with serial clock composite sync voltage.
waveforms have been 'added to show relation to standard This automatically-controlled video-filter-type
known waveforms supplied by the timing logic. The black- processor is used with a linear CCO to produce a TV picture
level sample is taken from the output of the CCO when the from a picture scanned on a rotating drum. The only
serial register is over-scanned (more than the pixel stored precaution required is to ensure that black level reference
»
"'C
in the parallel registers), Only dark current is present.
The black-level clamp is taken during the beginning
signals are available in the output of the CCO when black-
level sample and clamp are being activated.
"C of scan of the serial register. There are blank bits between
o the charge detection node and where the parallel enters the Sample-and-Hold
til register. There can be as many as 15 of these beginning bits. The last processing method to be discussed employs
::!'. However, when the output signal has no video, there are a high-speed sample-and-hold (S/H) circuit to recover the
o
:l usually only six. These six beginning bits represent only dark video envelope from the signal pulse train of the CCO output.
en current. This clamp action establishes the black reference Figure 19 illustrates a simplified processor circuit that uses
for the entire video line. This explains the major operation TI's new 15 MHz sample-and-hold integrated circuit
of the processor. However, the automatic-gain control and (TLl591). The simplified circuit provides the following;
insertion of blanking and sync circuits are discussed. first, it shows how the sample signal of the S/H is developed
Automatic-gain control is applied to the feedback from the reset clock driver logic of the CCO through the
resistor of the second amplifier by making a portion of it use of a single TTL logic IC (SN74265) and second, it shows
a light sensitive CaS resistor and controlling its value by the that three additional components permit it to be inserted into
amount of infrared light applied to it from an LEO. This all- the standard line-clamp black reference circuit (see Figure 5).
in-one device has a wide-hand-width resistor that varies from Further explanation of the sample clock development
megohms in the dark to only 200 0 under bright illumination with the SN74265 will be helpful. A positive-going TTL-
from the diode. The range is limited by the 2.4 kO series level clock pulse 20 ns wide is needed to enable the S/H to
7-42
470 Il
CCD BUFFER
ON COD
MOUNTING
360 Il
TRANSISTORS
ALL PNP - 2N3406
ALL NPN - 2N3904
DIODES - 1N4148
1 kll
VIDEO
-= 20 Q 56 Il
OUTPUT
360 Il
-= -5 V
-= 20 Il
33 kll
33 kll
• • +5 V
1 kll
5.6 kll
-=
PEDESTAL ~........-.t
SET 1.2kQ
3.9 kll 1 kll

-= -=
- 5 V 25"F -=
GAIN-LEVEL
5.6 kG SET
10 "F
,*50"F
2.2 kll 2.2 kll
1 nF
1 nF-1'
LBLACK-LEVEL
CLAMP (BLCI '=
~ 1 kfl
-5 V
BLANKING
PULSE POS
(CSPI
leo",,,,,pos (CSPI
Figure 17. Complete Amplifier and Processor for Monochrome CCD Camera
"./:.
II
w
Applications
HORIZONTAL
BLANKING
HORIZONTAL SYNC
(PARALLEL CLOCK) _ _ _ _ _ _ _ _ _ _ _ _ _ _ ~
CCDOUTPUT
SIGNAL
i4----t-END OF VIDEO START OF VIDEO~
14---....- OVER SCAN OF BLANK PIXELS IN---J+-..I

SERIAL REGISTER SERIAL REGISTER
BLACK-LEVEL--------.Ur-------------------------
SAMPLE
BLACK-LEVEL --------------------------------U-
CLAMP
Figure 18. Black-Level Clamp Timing for Area CCD
LINEAR
SN74S10 CCD
B2 !l
O.S. +5 V
VDD
.....-"oIVIr-iIr-------I 2 7 r--------'
WIDE BAND
HIGH Z INPUT
BLACK-LEVEL
CLAMPED VIDEO
II
INEGATIVE WHITE)
1.0I'F,*
3V - - - , r-
oV - - w l ' 0,01 I'F
LOW DURING BLACK REFERENCE - - '
Figure 19. CCD with Sample-and-Hold Black-Level Clamp
7-44
take a new sample of the incoming signal. For the output The variable resistor allows a small delay time adjustment
signal train of the CCD, the sample pulse must occur during for optimum timing to improve performance. The sample
the data level or low peak of the CCD output signal train. clock pulse is generated by the logic and function of the
Figure 20 shows the output signal of the CCD at a delayed RCK and the further delayed RCK pulse. This second
6.67 MHz data rate. In addition, it shows the corresponding delay determines the width of the sample clock pulse.
sample-and-hold output. The sample-and-hold output changes Figure 21 shows a complete circuit showing the
near the middle of the low peak of the CCD output waveform. SN76876 processing video from a TC 103 operating at
Even though the sample clock pulse is not shown, the 10 MHz with the S/H output level shifted and automatic black
evidence of its location can be seen. To locate and generate level clamped. Figure 22 illustrates output video from this
this sample clock, the trailing edge of the TTL-level RCK processor circuit. The TLl59 I S/H typically recovers 90%
is delayed by the two inverter gates and the R-C network. of the peak input signal.
OUTPUT
FROM TC10l
S/H OUTPUT
FROM TL1591
VERTICAL = 0.1 V/div HORIZONTAL - 0.2 I's/div
Figure 20. Sample-and-Hold (TL1591) Operated with a TCI03 at 6.67 MHz
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7-45
2
15 9 1 1000
,
3
U14 82 PF*,
U2 SN75369 LINEAR
SN74S00 r 620
CCD
RCK TC101
7 21 U16
J
EDS O.S.
+5 V
+16 V 22 2
+16 V
Q7 Q8 TL1591 U17 *,0.1I'F

2N3904 20 kO
0.11'F 8
750
EOS 2 7
3 6
1 kO 1 kO 20 kO
4 5
-=
750
+ 16 V -=
OUTPUT--~~~~--------------------, TO LINEAR
CKTS 12 0 FROM LOGIC
3.4V:t,.r
+5V~+5V
4700 V
,--",---"""--BLS
° ,*1.0I'F
1 kO FROM CX ORIVER
220
-18V~-18V
,*1.0 PF
3.4V-, .--
+5 V OV U
4.3 kO H,...-vlllr-----lf-- BLC
5100 1.2 nf
1 kO~~ __________ ~I~
5100 8LACK-LEVEL
ADJ U15 SN74265
U17 TL1591
-= 4.3 kO U18 LM318
U19 LM311
-5V------~--------------~--------~----------~ ALL DIODES 1 N4148s
Figure 21. Sample-and-Hold Processor with Automatic

Black-Level Control to-MHz Operation
II
7-46
TOTAL INTEGRATION TIME - 1765 ". WHITE REFERENCE
> >
'6 '6
:> :>
ci ci
20 "s/div 1 "s/div
DATA RATE 10 MHz
APPROXIMATELY 35% FULL WELL
Figure 22. Processed Output
CONCLUSION signal conditioning and basic signal processing methods.

Selection of a particular method or approach will depend on
The various methods described in the preceding the application. The designer must expand and update these
paragraphs are provided to familiarize the prospective CCD methods based on his system requirements.
user or designer with the requirements for both CCD output
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7-47
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7-48
LINEAR CCD OPERATION AT 10 MHz
This application report covers the following main topics: register. Thus, an even charge packet and an odd charge
I. The operation of the Texas Instruments TC I 02 packet arrive in the region at the same time. To separate the
128 x I linear image sensor at a 10 MHz data packets into correct numerical order, the reset clock is used
rate for the charge clocking. The reset clock goes high on each
2. Restoration of the black reference to the data half cycle of the transport clock. The reset clock selects each
using the dark-reference pixels of the CeO packet in the correct order and applies them to a single
3. Conversion of the output signal into binary data register. This single register converts the charge to a voltage
without sample-and-hold that is sent, via the reset MOS switch, to the V ref output.
In addition, circuit approaches (with data) to solve the After the optically generated charge is sent to the
problem of high-frequency clocking and the resulting output, the white reference portion of the output and the end-
transport-clock feedthrough into the output signal are of-scan signal are applied to their respective outputs. The
discussed charge for both of these signals is introduced by clocked bias
on the injection diodes. The white-reference clock controls
CCD Clocking the reverse bias on the injection diodes. A reduction of the
Operation of the TC 102 at a 10 MHz data rate is positive bias on these diodes causes a charge to be injected
affected by the function of each clock relative to the other into each transfer region (a clocked barrier-well). These
clocks. The purpose of the CCO clocks is to move the data charges are applied at the opposite ends of the two transport
from the photo sites to the detection circuit. The data is and end-of-scan registers from the charge detection diodes.
generated at the photo sites in the form of a charge that is The proper relationship among the clocks must be maintained
proportional to the optical input. At the detection circuit, the for charge injection into the registers. The relationships are
charge is converted to a proportional voltage that is applied as follows:
to the output of the CCO. I. The white-reference clock must be low to
The first step in the conversion is to send the charge generate the charge.
from the photo sites, via the transfer gate region, to the CCD 2. The transfer clock must be high to form a
shift registers, which are adjacent to the photo sites. The collecting well.
transfer is made by applying a high transfer-clock pulse while 3. The transport clock must be high to clear all
the transport clock is held high. The relationships among the extraneous charge from the virtual well region.
various clock levels required to move the charge are as Under these conditions the charge is contained in the
follows: transfer gate region (a process known as "fill") and is not
I. When a clock is high, it allows the charge to flow transferred to the virtual well region of the registers until
into the area under the clocked region (a well) the transfer-clock voltage goes low.
and when a clock is low or most negative it However, before the transfer-gate voltage goes low,
biocks the charge flow (a barrier). the transport clock voltage goes low to block out-of-time
2. When a clock makes a high-to-Iow transition, the charge flow down the register. The injection diode voltage
charge contained in its well is shifted to an goes high to create a deep potential well to prevent further
adjacent virtual well region. injection and to remove the excess charge contained in the
3. When both clocks are high, the photo site charge transfer region (a process known as "spill"). The removal
flows into the well of the transfer gate. of the excess charge produces a charge packet that is
4. When the transport gate returns to the low state, controlled by the size of the clocked well portion of the
it acts as a charge barrier in the transport register. transfer gate. This makes the injected charge to the register
The charge is then introduced into the virtual dependent upon the well capacity of the CCD or the saturation
•
wells of the transport register by the transfer output level. To complete the transfer into the register, the
gate. transfer clock is returned to the low state and provides a high-
5. When the transfer gate returns to the low state, charge barrier.
it moves the charge into the transport register.
When the transport clock goes high to move the High Speed Operation-l0 MHz
charge toward the transport combining region, To provide a suitable clocking method for data rate
the transport gate remains low to prevent charge frequencies ranging from 5 to approximately 10 MHz, the
flow back to the photo sites. portion of the data period that must be dedicated to the reset
The charges from adjacent even and odd photo sites clock in order to get satisfactory operation must be
are simultaneously clocked along the even and odd transport determined. The reset-pulse duration at the top 10 % should
shift registers to the combining portion of the transport
7-49
not be less than 40 ns. In addition, the reset pulse should frequency divider is four. This gives four quadrature-
start coincidentally with the transport-clock transition. complementary output waveforms (designated A, B, C, and
Coincidence is necessary because, if the reset pulse rises D in Figure 2) which represent the logic timing.
before the transport-clock transition, there is danger of the A delayed signal in phase with the A waveform is used.
charge from a previous pixel being mixed with the charge for reset clock, RCK. Another frequency division by two
that is being read out. The purpose of placing the reset pulse provides the TCK that is delayed by the SN75369 drivers.
in coincidence with the transport-clock transition is to allow To meet the XKC transfer clock timing as related to the TCK
as much time as possible for the output signal to settle and as specified in the data sheet, the decoding of the E waveform
data to be acquired. must be different from that in the data sheet circuit. This
At 10 MHz, the data period is only 100 ns. Ifthe reset difference causes the XCK to rise with the TCK transition
pulse is 40 ns plus rise and fall times, there are fewer than and to fall near the center of the second half-period of the
50 ns for the data time. Two data periods are produced for TCK so that the 50-ns minimum is satisfied at 10 MHz. The
each period of the transport clock, TCK. A timing-logic minimum can be as low as 40 ns to accommodate.12-MHz
circuit that will produce the recommended timing can be operation for most of the linear CCDs. The XCK logic signal
derived from the circuit on the data sheet. To derive the is used to gate a first half-period of the TCK through the
circuit, the clock oscillator must be capable of running at SN75453 white reference driver. Both the XCK and WRCK
four times the data frequency or 40 MHz and the first divider repetition rates are determined by the SN74LS193 counter
flip-flop must be able to clock at 40 MHz. The circuit shown chain. The counter chain down counts TCK periods to set
in Figure 1 is a modified version of the data-sheet circuit. the exposure time or XCK repetition rate period. The
To provide IO-MHz operation, all logic ICs are Schottky- waveforms (see. Figure 2) are simplified in that circuit
clamped for high speed. As in the data-sheet circuit, the first propagation delay times have not been taken into account.
SN74S74
SN74S124 o 0 TEST POINTS
5·30 pF
TRIMMER
CAP
DEVICE
UNDER TEST
0.1 "F VOO
22 II
RCK VDO
10 kSl
22 II
XCK VREF
VCL
VCH
WRCK
+5 V
COUNTER
SN74lS193
--------- COUNTER CHAIN
COUNTER
SN74LS193
- - - -COUNTER -
SN74LS193
- ,
!LSBI IMSBI
I +5 V - t " - - - - - - ,
LO
I VCH
I>----;:>CO BORI>----i> I l~D:n *--~-l
CU CAR I ...-----+VCH
t---b:--;"-O:-:--:+- VCL
'-.:rA-;B,-,Cr-:r0..;c,LR,,-> 0.1 "F I VCL
SWITCH I l0kn AOJ
_____ ...J -20 V-+---4----'

Figure 1. Waveform Generation Circuit for Testing Line Image Sensor (10 MHz)
7-50
CLK
A~
8--'1...-_-' L
C - ,..._ - - - ' L-
D...J .--r
' - - _....
I...-_ _ _....
TCK - - , ' - -_ _ _ _--'
E~
F I
XCK --.J
WRCK-----,~__________~
TCK~ L
RCK~ r
CONVERT JI'--__---'rl..._ _ _....r l..._ _ _....rlL-_ _ _....!lL-____r--L
Figure 2. Logic Timing, 10 MHz Operation - TCI02
For the exact effect of circuit propagation delay times, increase in dark current. If the dark current increase is
Figure 3 shows the TCK, RCK, XCK, and WRCK as seen detrimental to operation, then additional capacitance or
at the clock inputs of the TC 102. resistance can be added to the clock drive lead to increase
Figure 3 shows that the reset clock rises coincidently the rise time to 15 ns.
with the transport clock transitions. However, because of Figure 4 illustrates the output-signal delay of the CCO
the delay in the counter chain borrow output (SN74S00 and with respect to the input of the clock. The transistor-buffered
SN74S74), the rise of the transfer clock is delayed from the output signal in the two white-reference regions is shown
rise of the transport clock by 40 ns. The WRCK is delayed with the RCK. The waveforms indicate that the delay between
by the same amount and the delay is not detrimental as long the reset clock and the reset interruption in the output signal
as both clocks are present at least 30 ns before the TCK goes is approximately 13 ns. This delay is reasonably accurate
low. When the reset clock pulse rise time is less than 15 ns, even though there is a moderate amount of ringing on the
the quantities specified in the data sheet may cause a small waveforms. The ringing is increased by the test equipment.
en
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50 ns/dlv 50 ns/div
Figure 3. Clock Input to TCI02 Figure 4. Emitter Follower Buffered Output Signal
Showing White Reference (Output Signal with RCK)
7-51
Figure 5 illustrates the same signals but with improved test
conditions.
Figure 6. Output Signal

Only - No Spike Suppression
a moderate time of perhaps less than I % of the discharge
Figure 5. Output Signal Only - Spike Suppression time constant. A time location in the CCO output signal has
been provided for this operation. The time location is called
Transport-Clock Feedthrough Reduction the dark-reference pixels. They occur four isolation pixels
Transport-clock feedthrough can be a serious data before and after the optical-data stream (see Figure 7). This
interruption problem with the CCO sensor. However, the black-level clamping method can be accomplished
problem is eliminated when the transport-clock transition is repetitively in an automatic manner as shown in Figure 8.
timed to be coincident with the reset-clock pulse low-to-high In this simpljfied form of the automatic black-reference
transition. This combines the feedthrough in the necessary circuit, the output of the sensor is buffered through an emitter
data interruption caused by the reset clock. This timing allows follower and coupled to a second amplifier. The second
satisfactory CCO operation and maximizes data output time amplifier must have a very high input impedance at low
per pixel. Efforts to minimize the magnitude of the frequencies and be direct coupled. However, it mayor may
feedthrough noise should also be considered. not have voltage gain depending upon the requirements of
As shown in previous figures, the TCK feedthrough the follow-on circuit. In this case, no more voltage gain is
noise is reduced by building the circuit on a ground plane required because of the output of the CCO (over 1 V). The
PCB and by a rise time reduction circuit on the TCK lead. high input impedance of the amplifier allows the use of a
The rise-time reduction circuit is the IO-ohm resistor and small coupling capacitor, C I. This minimizes the charge leak
lOO-pF capacitor combined with the 22-to-24 ohm series off before all data is read out. A small coupling capacitor
resistor located on the terminals of the SN75369 driver (see is desirable so that the recharge circuit impedance is not
Figure I). This RC network shunts the fast rise currents from unreasonably low due to the short time allowed to rycharge
the outputs ofthe SN75369 driver back to its high- and low- or clamp.
supply bypass capacitors. In this manner, the very highest The clamp circuit comprises the following components;
frequency components of current are not allowed to flow into the emitterfollowe(buffer, switch S 1, and capacitor C2. The
the ground plane. The effect of removing this shunt network operation of the circuit (see Figure 7) is as follows:
is shown by the added feedthrough (see Figure 6). This anti- I. Switch S 1 is always open except when the first
ringing and rise-time reduction circuit can be accomplished set or pre-data dark-reference pixels occur in the
by other RC arrangements, but the method is still the same. output signal stream of the CCO.
2. Switch S I closes and applies the voltage stored
•
Black-Reference Restoration on capacitor C2 to the second amplifier side of
In video processing, the output signal reference level capacitor C I.
for the sensor under a no-light condition (black level) must 3. Switch SI opens when the dark-reference time
be known at all times . The de output signal voltage level is over and the bias voltage to the second
of most CCO sensors ranges from 6 V to 14 V and is not amplifier, and the output, is referenced to the
stable with temperature or drain voltage variations. applied level until it is reclamped.
Therefore, the signal must be capacitively coupled The automatic feature of the circuit (I.e., how the
somewhere in the signal path. This capacitive coupling correct voltage is obtained for capacitor C2 and its operation)
provides an opportunity to clamp the charge or voltage drop is as simple as the clamp method. As shown.in Figures 7
across the capacitor at a time that will represent the black and 8, switch S2 opens each time the following data dark-
reference level for the signal. This clamping is done over reference pixels appear in the data train and a black-level
7-52
sample is taken of the output. This sample is compared with The block diagram in Figure 8 was arranged to match
a predetermined black-level set voltage by the comparator. the circuit in Figure 10. However, there are details about
The comparator generates an error pulse output to the this circuit which are not covered by the block diagram
amplitude detector. This error pulse is transferred by the description. The details are helpful in understanding the exact
amplitude detector as an error voltage to correct the voltage circuit operation. The high-input impedance buffer amplifier
stored on capacitor C2 so that, when the voltage on C2 is is an FET source follower with a constant current source
applied via S I to the amplifier, the output of the amplifier load followed by a standard emitter follower. The FET
will be the desired black-level voltage (zero for our operates at 6.3 rnA and the emitter follower at 6 rnA, giving
application). Since C2 must be quite large to prevent low an 0.95 gain with an output impedance of less than 25 O.
frequency oscillations, it takes several error pulses to correct Any FET used in this amplifier must be made to operate at
the voltage stored on C2 when the circuit is first turned on. 6.3 rnA for a gate to source voltage range from 0 to - 2.5 V
However, after the circuit has reached equilibrium, the maximum. This is the maximum negative voltage available
required correction occurs on each readout cycle. from the black-level clamp as supplied from the peak
detector.
+10 V-
I
INPUT FROM I
I
CCD I
I
I
OPEN
S1 CLOSED
r------------------{$$~--------------~--------~:~-
I
BLACK-LEVEL I
I
CLAMP I
CLOSED
~~~------_4--------------~SSr_------------~
S2 OPEN
II
L---_-----J
BLACK·LEVEL
SAMPLE
OV
Figure 7. I/O and Switch Timing for Automatic Black Reference
OUTPUT
SIGNAL (I)
~---------------4~----OUTPUT
c:
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CCO ctl
COMPARATOR .52
Co
Co
S2
«
BLACK·LEVEL
II
SET (ZERO)
Figure 8. CCD Output Signal Buffering Circuit Automatic Black Reference
7-53
This limited voltage occurs when there is no positive so that the switches will be turned on and off at the exact
error signal from the LM311 comparator. The maximum black-reference pixel times.
negative output voltage of the positive peak detector is then The exposure-time counters with black-level switch
produced by the three diodes being forward-biased to - 6 V signal decoding are shown in Figure 7. The decoding is taken
by the 100 kll resistor. For the automatic black-level from the outputs of the first two down counters. The
correction circuit to function, the - 1.9 V input bias to the minimum down count is set by the minimum number of data
buffer FET of the amplifier must produce voltage equal to reset clocks to completely read out the CCD from transfer
or more negative than the black-level voltage desired at the clock to the two white reference output pixels. This count
output of the amplifier-in this case, zero volts. This input is 19 + 128 + 14 (or 161) but the counter counts transport
bias voltage is necessary so that, when the black-level sample clock cycles which are half the data frequency. Therefore,
is taken, the comparator will produce a small positive pulse the nearest minimum whole number of TCK counts is 81.
output to be detected. This positive voltage will then be To decode a pulse for the black-level clamp four pixels wide
subtracted from the negative output of the detector to bring and 12 counts from .the beginning (81 for down counter),
the input bias of the buffer amplifier to the correct level so the decode numbers are 75 and 74. In Figure 9, 128 was
that the output is the desired black level when the clamp added for increased exposure time, so 202 was used. By the
switch is closed. same reasoning, the decode count for the black level sample
The black-level clamp and black-level sample can be was determined to be 4 + 128 (or 132). Other decode
timed to occur during the same dark-reference pixels time. intervals can be determined to fit the desired exposure time.
However, the black-level clamp disturbs the signal and may The black-level correction cycle may be applied at regular
cause some errors in the black-level sample. The control intervals during the exposure time as long as the interval
signals to S I and S2 are timed by the exposure time counters matches the dark-reference pixel repetition rate.
BLACK-LEVEL BLACK·LEVEL
CLAMP SAMPLE
--, r 3 . 6V ---, r 3 . 6V
U_- OV U-- OV
74
202
2 Ii 8 is 32 64 128 2: 4 8 16 32 64 128
2: 2 Ii 4 8 8 16 16 32 32 64 64 128
SN74S04
DECODER
COUNTERS ON
LOGIC BOARD
COUNT - 209 COUNT - 977
4 13 4 1 3_--l._ _-i> CD
BOR.-
SN74LS193 +5 V SN74LS193
14
CL CL
JO.1I'F
Figure 9. Black-Level Sample and Clamp Decoding
7-54
Analog to Binary Signal Conversion supplies. The convert-pulse timing as related to the output
The signal is conditioned so it will interface with the data of the CCD is important for correct AID conversion.
analog-to-digital converter (see Figure 10). For high-speed The TD 1021 analog amplitude data sample is read
conversion at 10 MHz, the TRW TDI021 4-bit parallel flash 10 ns after the 50% point of the convert pulse rising edge.
converter is used. It requires no external sample-and-hold In addition, the pulse is a positive TTL amplitude and should
because of its speed and design. It accepts a 0 to - I V input be nominally 30 ns wide. From these conditions, the convert
signal, requires a convert pulse to tell when the analog signal pulse should be decoded from the timing logic so its leading
is to be converted, and is powered from 5 V and - 6 V edge is 10 ns ahead of the desired sample point on the output
FROM
OUTPUT
OF CCD
15 kO 3000
-20V~~~-----'---J '-----_'\ivv--+ 18 V
r---------~--------_.~+5V
CONVERT
TRW A·TO·D PULSE
510 FLASH CONVERTER FROM LOGIC
16 BINARY
AGND CONVERT OUTPUTS
2 15
VIN D4LSB LSB 1
3 14
NC 03 2
4 13
VRT 02 4
5 12
-1V-e~----------~ VRB D1 MSB MSB 8
6 11
-6V-e----~ VEE DGND
0.1 !'F-::I:' 7 10
0.1 !,F ":" 0.1!'F,* NLiNV VCC ":"
8 9
1 kO VRM NMINV ,*0.1!'F
4700
1 kO +5V
1 kO
' - - -___- - - -___-...- - 6 V
,*0.1!'F
+5 V
4700 3V
ov
--u-
BLACK-LEVEL
SAMPLE FROM
LOGIC
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5100 c.
3.3 kO *,0.1!'F
1.2 kO
,*0.1!'F 5.1 kO
ALL PNP - 2N3906
NPN - 2N3904
DIODES - 1N4148
«
'T' 0.01 !,F
3V....,.
OV U
'------~~-~~----~------6V
II
BLACK-LEVEL CLAMP
FROM LOGIC
Figure 10_ Automatic Black-Level Control and AID Converter
(0.1 to 10 MHz Operation)
7-55
pixel pulse of the CCD. In order to approximate where to signal B is delayed by one gate delay to narrow the convert
decode the convert pulse, it is necessary to determine the pulse by 10 ns so that pulse will be 40 ns or less wide. Since
time delay of the pixel pulse arriving at the analog input of the pixel delay was also taken with respect to the reset clock,
the converter relative to the logic from which the convert which is delayed from the logic signals used for decoding,
pulse is to be decoded. The propagation delay time between additional delay would be needed to place the convert signal
the reset clock high-to-low transition and the high-to-low exactly as required. Two SN74S08 AND gates were added
transition of the pixel is 15 ns (see Figure 11). to provide this delay. Figure 12 shows the CCD pixel data
In addition, as shown in Figure 12, the reset clock entering the AID converter and the convert pulse show how
rising edge is located where the transport clock feedthrough well this timing method works.
starts to disturb the data pixel. Therefore, the convert pulse The results of this design approach are represented in
should end exactly where the reset pulse starts and should Figure 13. This optical input for the CCD is a uniform
exist 30 ns before that point. The timing diagram in Figure 2 illuminated seven-gray shade and black using an incandescent
indicates that this is the location shown for the convert pulse source operated from direct current to prevent 60-cycle
and it is decoded from the logic symbols by an AND function modulation. No IR filter is used because there would not be
of logic signals D and delayed B as shown in Figure 1. Logic enough light output to produce a I-V CCD output. As a result
.2
t
o
o
N
~
E
o
~
50 ns/div 50 ns/div
Figure 11. Conditioned CCO Output Signal Figure 12. Conditioned CCO Output Signal
Time Related to Reset Clock Time Related to Convert Pulse
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Figure 13. Conditioned CCO Gray Shade Signal and

AlO Converter Binary Outputs
7-56
of the IR plus visible light combined, the gray shades are
not uniform changes in intensity. However, this does not
detract significantly from the presentation. The AID
converter was set up for its output to be 0000 for a 0 V input
and 1111 for a -1 V input. Therefore, -0.067 V analog
equals one binary bit state change. Combining the digital
outputs with the conditioned CCD signal adds ringing and
spikes to the signal. The ringing and spikes are undesirable
in the final presentation at 10 MHz output. Figures 14, 15,
and 16 show relatively clean output signals.
> Figure 16. Conditioned CCO Output with Optical Input

'6
>E (10 MHz Operation - 50 ns/div)
o
~ CONCLUSION
The methods and circuits presented for IO-MHz

operation of the TC 102 linear image sensor have been
directed at the elimination of the transport clock feedthrough
from the output signal, automatically maintaining the output
signal black reference, and digitization of each pixel output.
500 nsfdiv
Although the TC 102 is highlighted in this report, ihe methods
Figure 14. Conditioned CCO Output with Optical Input described can be applied to the complete family of virtual
(10 MHz Operation - 500 ns/div) phase linear CCD devices for operating frequencies in the
range to 10 MHz.
>
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C'C
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c..
0.
200 nsfdiv
<t:
Figure 15. Conditioned CCO Output with Optical Input
(10 MHz Operation - 200 ns/div)
II
7-57
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7-58
OPERATING INSTRUCTION SET FOR
LINEAR CCO IMAGE SENSOR
Introduction
The PC401 and PC402 are the Evaluation Boards designed to facilitate operation of the Texas Instruments
CCO linear imager sensors. The PC401 operates the following types of imagers:
TC103 (2048 x 1 pixel organization) Reference: Evaluation Kit - TCK103
TC106-1 (2592 x 1 pixel organization) Reference: Evaluation Kit - TCK106-1
The PC402 operates the following type of imager:
The boards are intended to be used as construction aids for experimental systems using the above-listed
CCO line-scan imagers. The necessary electronic systems required to drive the CCO imagers are included.
Only the input of power supplies and optics is required. The logic circuitry required to time the drive signals
correctly and the drivers that interface the logic to CCO levels is provided on the board.
Clocking control is provided by an internal clock generator that can produce data rates from 200 kilohertz
to 2 megahertz and can, if required, be overridden by an external clock input.
Exposure time control is also available internally with provision for exposure times from 2 to 16 milliseconds,
and can also be overridden by an external input.
Clock voltages for transport, transfer, and reset clocks are controlled as shown below.
• The low-level voltage levels are directly controlled from one of the external supplies (VILl.
• The high-level voltage levels are supplied from the board and can be adjusted (V CH adjust).
Power Supply Requirements

Three voltage supplies are required:
(1) Logic supply: + 5 volts, 300 milliamperes
(2) Imager output amplifier (VDD): + 16 volts min, 100 milliamperes
(3) Imager low-level clock (VILl: - 16 volts min, 100 milliamperes
Equipment Required for a Typical Setup

(1) Oscilloscope (Tektronix Model 765)
UJ
(2) Current-limited power supplies (two HP 6216A, one HP 6214A) s:::
(3) CCO imager being evaluated o
(4) Connectors for connecting board to power supplies ',tj
CO
(,)
Procedure
C.
(1) 'Adjust the power supplies as follows: c.
Supply # 1: + 5 volts, current limit 250 milliamperes <t
Supply # 2: + 16 volts, current limit 70 milliamperes
(2)
(3)
Supply # 3: - 16 volts, current limit 70 milliamperes
Connect the power supplies to the evaluation board as shown in Figure 1.
Adjust the oscilloscope with the main sweep set to 2 milliseconds per division and vertical
sensitivity set to 5 volts per division. Connect the external sync of the scope to the white
II
reference clock (WRCK) test point shown in Figure 1 to synchronize the scope with the exposure
time rate.
7-59
(4) The following clock voltage amplitudes can be checked at test points shown in Figure 1.
LOW LEVEL HIGH LEVEL
WRCK White reference clock 6 to 8 V 15t016V
(selected by J2 jumper)
XCK Transfer clock t -16 to -13 V to 5 V
TCK Transport clock t -16 to -13 V 1 to 5 V
RCK Reset clock t -16,to -13 V 1 to 5 V
tSet per CCO specification in data sheet for the device being evaluated. The high-level voltage for XCK, TCK, and RCK are
adjustable using the V CH(ADJ) potentiometer shown in Figure 1 . The low level is set by adjusting the - 16-volt power supply,
VIL·
(5) When the clock levels have been checked, plug the CCD imager to be tested into the test socket
and connect the vertical oscilloscope probe to the output-signal test point (see Figure 1). Set
the vertical amplifier to "ac coupled" and set the sensitivity to 0.2 V/division. NOTE: Recheck
clock levels after inserting CCD into test socket and readjust clock levels if necessary.
(6) Begin with a low light level on the imager and increase the light level until an output level of
approximately 0.4 volts is obtained. Note that if a shadow is cast across the imager the amplitude
of the output signal is affected in the region of the shadow.
(7) Check the effects of exposure time by adjusting its control (see Figure 1). Observe the time
between the white reference output signals (see Figure 2). Set the exposure time to 10
milliseconds. Instructions for external exposure time control are shown in the next section.
(8) Check the output frequency range by setting the frequency-adjust potentiometer to each extreme
and observing the frequency range with the oscilloscope. The board should deliver a range of
0.3 to 2 megahertz. Set the frequency to 0.5 megahertz.
(9) With the main sweep set at 1 millisecond per division, and with the expanded sweep set at
10 microseconds per division, look for the output white reference signal. When it is found, move
the probe from the output signal test point to the end-of-scan (EOS) test point and verify its
presence (see Figure 2).
(10) If the TC103 or TC104 is under evaluation, note that an internal reference voltage pin (pin 5)
is provided from the CCD. This pin provides the reference voltage for VREF (pin 1) of the output
signal amplifier of the imager. Jumper J4 can be set to connect INT REF and VREF of TC1 03,
TC104, or TC1 06-1 through a 5.1-kilohm resistor (see Figure 3). For TC1 02, J4 is set to connect
VREF to the 7.2-volt point on the voltage divider between VDD and ground (see Figure 3).
(11) Figure 4 outlines the timing waveforms at test points A through G with appropriate clock pulses.
External Exposure Time

Refer to Figure 3. With jumper J3 set to external position (EXT) and with an appropriate external counter
chain, the exposure time can be set as a multiple of transport clock (TCK) period. The output from the
external counter is returned to the external exposure time input.
An example of such a circuit is shown in Figure 5. For a data rate of 0.5 megahertz, the time between
the white reference outputs (defined as exposure time) for this example is 8188 microseconds. This time
may be varied in increments of 4 microseconds (2/data rate) by changing the input to the preset input
lines. (Data rate = RCK frequency = 2 X TCK frequency.) Therefore:
TCK = data rate/2 = 500,000/2 = 250,000
Since the preset input down count = 111111111110 2047, time per count 4 microseconds.
Thus:
Exposure time 2047 counts X 4 microseconds/count 8188 microseconds
7-60
SOCKET FOR: TC103
TC104
TC106-1
GROUND
B "i r~-~l,~"r~;'
TP10
APPROXIMATE BOARD
SIZE 4 3/16" X 4 3/8"
INCLUDING EDGE
Go J L___
CONNECTOR U7
TP3 TP4 TP5
0 0 TC102 J2
TCK XCK WRCK
VCH ADJ.
GG OMIT JUMPER
FOR WHITE REF.
EXPOSURE
FREQ. ADJ.
TIME ADJ.
MATING CONNECTOR
41--- TRW/CINCH 50-44A-30
OR EQUIVALENT
+5 V
VIL CLK. EXP. COUNTER + VDD
1-16 V) CHAIN INPUT 1+ 16 V)
IJl & J3 SHOWN IN INTERNAL SELECT POSITION)
t Jl = INTERNAL/EXTERNAL CLOCK
SELECT
~ J3 = INTERNAl/EXTERNAL EXPOSURE TIME SELECT
§J4 = INTERNAl/EXTERNAL REFERENCE VOLTAGE IVREF) SELECT
FIGURE 1. LINEAR CCD EVALUATION BOARD
IJl
-
I:
o
«I
(J
C.
C.
«
--
7-61
-...J
a,
I\)
II SUO!le:>!ldd~ .
XCK Jl- . 11
EXPOSURE TIME R
. L . . .- - -
~~ ~ U
RCK lJl.Jl JlJUW
TCK
OS
n ~~
, 2 3 4
3
13 14
EOS ~'~-n-n~~~~n-n-JL~~-"~~~'-M-~rL-~~~-"-rL-J~~"-rL-~ ~~
Outl?ut Signal (OS) pulse identification: I = tsolation pixel, IP = Image pixel. B = Black reference pixel, WR = White reference pixel, X = Empty pixel.
FIGURE 2. OPERATING INPUT AND OUTPUT VOLTAGE WAVEFORMS (TC103 SHOWN)

EXT ClK ClK
INPUT EXT
52l~
ClK
J1 +5
+5 • •
ID
D.I
PRE
FREQ ~ lDIFREa 2
10 • • j1210 alL.rc
AOJ
CCO
~oo
VOO I
D.l 9.1
pkO
D.I =
•
TO EXT EXP
COUNTER
III
~ • E __ ~ZS~~ __~N~~~6 +VOD VREF
-kO
CHAIN
INPUT ...........
'I _I'" 1 "1 ... I .. : I r I? ~!llU ....... I
7.2 V
5.1
INPUT~
REF 7.5 kO
VSS
EXT
T.P.I
J3r-
EOS
INT Vil OUTPUT
I kOW- A
U6 -14
a
18 kO
:~~
. UI - SN74lS626N Vil
0 V OD ~Vll U2 -
U3 -
SN74DDN
SN7474N
0+ 5V ~GNO U4 -
U5 -
SN74SIDN
SN7474N
EXT~!,TIME
U6 - SN74lS123N
INPUT VRI - uA78MD8C
II
FIGURE 3. EVALUATION BOARD SCHEMATIC
"
0,
w
Applications
CLK
,
,
A~ L
,
B ---j !-,_ _ _ ..J L..-_....Jr
,
C -, ! '---_. . .r---
D ..J
,
E ----.J,,
F ------11~--------~----~------------------------------------
: ' - 60 ns WIDE
INT G I
EXP ---J
EXT EXP{"V
TIME
INPUT lL__ ~~ __________ ____-+__________ _______________________________
~ ~
OPTIONS·
,:
XCK
~~-------+---~----------------------------
WRCK ~L_ _ _ _ _ _~
,
RCK ____......n~_ _ __....Jn~______....Jn~______~n~______~~

»
'0 FIGURE 4. LOGIC TIMING WAVEFORMS
~. TO PIN 14
(')
III ONCONNECTOR--------~C~O~U~N=TE=R~.-----------.~----~C=O~U~N~T=ER~~--'
:to ISee Figure 1} SN74LS193 COUNTER SN54LS193
o ILSB} SN54LS193 (MSB)
:::s Y.SN74LSOO
en FROM PIN 7 L,OAD LOAD LOAD
ON CONNECTOR
(See Figure 11 5V
•
0.1~Fl
FIGURE 5. EXTERNAL TIME EXPOSURE CIRCUIT
7-64
A SIMPLE METHOD OF CONDITIONING THE OUTPUT OF A CCD IMAGER
FOR INTERFACING TO A DIGITAL SYSTEM
introduction CR1. This limits the negative swing of the

rectifier output to one diode drop below ground.
For applications such as bar-code reading or
At this point, the "black" level is at or slightly
optical character reading, it may be desirable to
below zero volts. Next, the signal is integrated
convert the analog output of a Charge-Coupled
by R3 and C3. This acts as a low-pass filter,
Device (CCD) imager into a binary waveform in
removing most of the transfer-clock component
which one logic level represents "black" and the
from the signal. The final stage is a comparator,
other "white". The resulting binary waveform
U2, with hysteresis (provided by the
could then be used as a data input to a digital
combination of R4 and R5) that squares the
processing system for decoding (a
filtered and rectified signal and provides the final
microprocessor, for example). A simple, low-
TTL-level output. Because the transfer clock
cost method of producing such a waveform is
cannot be completely removed from the signal
described below.
with only a single-order integrator, there is still
In the circuit shown in Figure 1, the voltage some high-frequency noise riding on the signal
output of a CCD imager is amplified, filtered, at the input to the comparator. The hysteresis
rectified, and "digitized" to produce a simple allows the comparator to ignore the effects of
serial representation of the image. The input of this noise. Without the hysteresis, spurious
the circuit is required to be at standard video pulses would appear at the output.
level (approximately 1 volt peak-to-peak), and
the output is a TTL-compatible signal. Following evaluation
is a detailed description of how the circuit
This circuit was breadboarded and tested using
operates.
the TCK 103 evaluation board to provide the
necessary timing signals and preamplification of
description of circuit
the CCD imager output. The TCK 103 uses a
The signal from the CCD imager is first amplified Texas Instruments TC 103 imager, a
by the LM318 (U2). C1 removes the DC offset 2048-element linear imager that is capable of
from the input, and R1 and R2 determine the gain providing resolution up to 240 points per inch.
of the amplifier. The gain of the amplifier is It was found that there was some degradation CIl
approximately - 200 and severely clips the of the imager resolution due to the coarseness s::::
signal. Because the circuit needs only to of the integration. It is believed that a higher
o
+-'
distinguish "black" from "white", no order integrator might improve resolution. One CO
(.)
information is lost, and in fact the clipping is factor to consider in analyzing the value of this
actually beneficial to the performance of the circuit implementation in a practical application C.
circuit. This benefit is gained by clipping because would be to weight the low cost and minimal C.
it partially removes some of the undesired parts count of this solution against a more cd:
transfer clock components from the· signal. Next, complicated and expensive solution yielding less
the inverted and amplified signal is rectified by degradation of resolution.
II
7-65
C2
5 pF
R2
100 kO
Cl 15 V
Rl
10 ~F 470 !l R3 15V
VIN ~I-----"'\N-""'-I (6) 1.6 k!l (31
(7)
>----;.....-VOUT
C3
-15 V CRl
lN914 -15 V
R4 R5
3.3 k!l 24 k!l
FIGURE 1. SCHEMATIC DIAGRAM OF CCD IMAGER SIGNAL CONDITIONING CIRCUIT
»
'0
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VI
7-66
TCI03-ISM Interfacing Circuit
Introduction
Features of TCI03
• 2048 X I Sensor Element Organization
• Virture-Phase Technology
• Output Signal Approximately ... I V Peak-to-Peak
• Maximum Operating Frequency . . . 10 MHz
• Effective Sensing Length ... 254 nm (A4, B4 size)
TCI03-ISM Scanner Module

The TC103-ISM is used to evaluate the TC103 CCD. It contains the optical system,
the driving circuit for the CCD, and a TC103 CCD, itself. The operating frequency is
2 MHz. The output data rate is 500 kHz. The resolution is 200 dots per inch and there
are 2048 sensing elements. Hence, the time required to scan a line is 4.096 ms.
The illumination source for the TC103-ISM is a white fluorescent lamp. The
wavelength is between 390 nm and 600 nm. The effective optical path is 333 nm.
The output signals from the TC 103-ISM are the Output Signal (OS) and the Transfer
Clock (XCK). The waveform of OS can be observed with an ocsilloscope.
Interfacing Circuit en
t:
The interfacing circuit is designed to interface the CCD Scanner Module and a PC.
o
";:;
The image is first scanned by the scanner and the data is sent to the PC. The resulting ca
()
image is printed by a laser printer such as the TI Omnilaser 2115. c.

c.
The input signals consist of the Master Clock (MCLK), the Transfer Clock (XCK), <{
and the Scanner Output Signal (OS). The analog signal is sent through the threshold.
comparator (V I, LM3II) and becomes a digital signal. The threshold voltage is set by
observing the comparator output waveform (VI, pin 7). A flip-flop (V2A, SN74LS74)
is used to clock the data and a serial-to-parallel shift register (V3, SN74LSI64) is used
to convert 8 bits of data into one byte. Since there are 2048 bits of data for one image
line, a total of 256 bytes of memory space needed.
7-67
The XCK is used to indicate at which point the image data starts. When this signal
goes from low to high, OS contains the beginning of the image data. Hence, a flip-flop
(U2B, SN74LS74) is used to start the reading sequence.
From the timing diagram of the scanner module, it is found that the first valid data
appears after 87 Master Clock (MCLK) cycles. An 8-bit counter (U8, SN74LS590) is
used to do the counting. As seen in Figure 2, 89 MCLK cycles are then chosen to be
the delay time before reading any data into memory. When the counter counts to 89, it
will trigger the CCDPALl (U9) and a Start-Of-Scan (SOS) signal will, in turn, trigger
another flip-flop (U12B, SN74LS74), which will reset the CCDPAL2 (UlO). The input
clock to CCDPAL2 is MCLK divided by 4 and this clock is further divided by 8 and
becomes the counter clock for the second counter (U6, SN74LS590). A write-enable signal
will also be generated and fed to the SRAM chip (US, IDT6116). The addresses for the
SRAM chip are produced by the second counter with increment for every 32 MCLK cycles.
Therefore, all the 256 bytes of data will be stored into the SRAM without any software
control.
When the second counter counts to 256, a Ripple-Carry-Over (RCO) pulse will be
sent to the TMS7742 microcontroller. This pulse will interrupt the microcontroller and
an interrupt service routine will begin.
T~S7742 PrograDl
There are 4 110 ports in the TMS7742. In this circuit, ports A and B are used as
110 cOlitroller ports. Port C is used as the data/address port and port D controls the upper
3 bits of the SRAM address.
When the program is initialized, 110 signals are sent to clear and disable all flip-
flops and counters. Next, the flip-flops and counters are enabled and the TMS7742 enters
the idle state until interrupted by RCO signal from the second counter (U6). When
interrupted, the address is placed on port C and latched (U7, SN74LS373). A read-enable
signal is then sent to the SRAM and read from port C. After reading all 256 bytes of
data, the data is sent to a computer via the on-chip serial port and a data-level converter
(U14, MC1488). A laser printer then prints the resulting image.
It should be noted that the TMS7742 is operated in the single-chip mode. The
operating frequency is 5 MHz. Only 174 bytes are used to write the interfacing program .
• Application
The CCD scanner and the interfacing circuit are designed to be used as an optical
reader. Applications include facsimile scanner, optical recognition, and PC scanner.
The interfacing circuit is capable of producing a correctly scanned line of image
on a laser printer and a thermal head printer. Demonstrations were performed with good
results.
7-68
J2
MClK
'------t-
Tf-----+-i-
I
i I I I II II I --7
AO
~ICJ
t~l-
--
01
00 2
01 S
A1
U10 A2
U9 02 6
CCDPAL 1 CCOPAL2 9 A3
03
_ _ 18 12 A4
1S MClK 1191 CClK 04
RAMWE 1S AS
~I_K QA 1 IPO RST 17
CClK2 as 16 A6
4 IP1
CClK~
SOS RAMOE 12 06 19 A7
- IP2
_ 11 07
17--_ _::-I
S IP3
Rfw OE
1-O---_ _c:-I
6IP4 SN74lS373
SOS~ IEJ--4 PAL16R4
1-"----7-1~ IPS U11
SV
IP6 - ~ t----IDJ 28 DO 27
IP7 OEI 1 29 CO 26
PAL16R4 30 C1 01 24
02
SV 32 C3
31 C2 -'NT3 12
33 C4 -INT1 r'~3_ _ _....-.,,--
34 C5
35 C6 -RESET f-;';:;4;-_____=__ t---ir'-'--"~
C7 83/TXDI:3,,7,_ _ _ _ _ _ _ --''!.r::..:....·
3
4 80 Vee ~: 5 v C1
~_---l-l ~181 X1 X1 \-:-:-----:i
, MC1488
_---j--___ 1
10 BS(R/W) X2 17 = ~PF
5 MHz C2
9 A4
____+___-=81 8 A3
7 A2
Me 36
Vss 40 30 pF
6 A1
AO
....... TMS7742
ffi Figure 1. Application Notes on TCI03-ISM and Interfacing Circuit
II Applications
MCK
I
~ j.-5 x MCK
IAIXCK Jl
I ~---------------------------------------------------
I
IBI CCLRJ
I
I
ICI CCLK1
(0)8081 -4--------~~\~S----~
~
n
- - ' - - - B9 x MCK - -...
L ___________________________________
lEI 8082
je-32X MCK1
IFI CCLK2
,IG) RAMWE
IHI -INT3
Figure 2. Timing Diagram for CCD Scanner Interface Circuit
II
7-70
Scanner Module Timing Descriptions
Timing Diagram No.1
This timing diagram shows the scanner module input logic and the PAL® IC output
logic.
Scanner Module Logic Inputs
SIGNAL NAME DESCRIPTION
Master clock for all input logic and PAL® logic. This clock operates at
MCLK
2 MHz at 50% duty cycle.
This signal provides the clock logic for the CCO transfer clock input.
XCK The period of this signal determines the integration time for the CCO.
This period has been set to. 5 ms for the scanner module.
CLMP This signal provides the clamp logic for the video processing circuitry.
PAL® Ie Output Logic

This signal provides the clock logic for the CCO transport clock input.
TCK
The frequency of this signal is 1/2 the data rate.
This signal provides the clock logic for the CCO reset clock input. The
RCK
frequency of this signal (500 kHz) determines the data rate.
This signal provides the sample and hold logic for the TL 1591
S/H
Sample/Hold IC.
This signal provides the conversion logic for the TL5501 6-bit A/O
RCK
converter.
Timing Diagram No. 2

I/)
This timing diagram shows the relationship between the master clock (MCK) and c:
o
all the CCD clock signals (XCK, TCK, RCK) for the sample/hold logic (S/H) and the ',t:j
CtI
AID converter logic (RCK). (,)
C.
C.
<{
II
PAL is a registered trademark of Monolithic Memories, Inc.
7-71
SCANNER MODULE LOGIC INPUTS
r--l
MCK
[:t::~~~~~=~~~~~::JI
~~--IIf------- -------~~
FREQ .. 2 MHz
n I
5 ms
n
. .---,i---
XCK FREQ .. 200 Hz
~ 4.162 ms ------I~ ---I~.0.838

... ms
CLMP I I L FREQ '" 200 Hz
I
I PAL® ICLOGIC OUTPUTS
I
TCK
[:::~~~~~_~._~==~~~~~~::=]I FREQ - 250 kHz
RCK
[:I:~~~~~::=::~~~~~:::J FREQ .. 500 kHz
[=!:~~~~~~=~~~~~~::=J FREQ - 500 kHz
StH FREQ - 500 kHz
Figure 3. Timing Diagram No.1
II
7-72
FREQUENCY - 2 MHz
I I
SCANNER MOOULE
LOGIC INPUTS
I I
XCK I I FREQUENCY - 200 MHz
I I
I FREQUENCY - 200 MHz
CLMP I I
I I
I
TCKI I FREQUENCY = 250 kHz
I I
~ i I
PAl' IC LOGIC
OUTPUTS RCK!
I
U :I U U U FREQUENCY - 500 kHz
n n
I I
RCK
I
LJl i I
: n I
FREQUENCY - 500 kHz
I I I I
I
n n n nL-_
I I
FREQUENCY - 500 kHz
S/H::
I I I I I
Figure 4. Timing Diagram No.2
-;-J
'-J
II
W
Applications
Timing Diagram No.3
This timing diagram shows the entire frame time for the scanner module. The video
signal is shown at various points in the video processing.

This is the raw CCD signal. The dark reference pixels (19) precede the
051
active pixels (2048).
This is the sample and held video signal. The sample and hold removes
052
the reset to zero between pixels.
This is the amplified, inverted, clamped, and buffered video signal.
053 This signal is available at the output connector of the scanner module.
It is also input into the 6-bit AID for digitizing.
II
7-74
MCK oooooooooomoomoommrumrumrumrumrumrumrumrumru~~~~~~~~MMOOOOOOOOOOOOOOOOOOOOoooooomlOO~~~mm~
I t-~-------------INTEGRATION TIME--------------~"I
XCK L-....;
I! I' I~
5)(MCK~ ~4)(MCK ,j j
RCK~
I 1 2 3 4 5 6 16 17 18 19 2 3 4 2047 2048
v~
OSI~
I 10 OARK REFERENCE PIXELS - - - - -
I
I
I
I
I
I
SIH~
I
OS2~
I
I
I
I
I
I
I
I
I
I
I
~ 87xMCK---------~
I
I
I
I
I
I
I
OS3
NOTES: RCK logic is the AID conversion clock

as' is the CCD video signal
OS2 is the sample and hold video Signal
(I)
OS3 is the amplified and inverted video signal
c:
Figure s. Timing Diagram No.3
-
.2
C'O
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a.
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II
7-75
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£ !: CiiF:
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FLUORESCENT LIGHT SOURCE
POINT OF LINE SCANNED

34.93 (1.3751-+-~::::::::'fI:.,L..~~--
23.93 (0.9421--U---f~!.) - 17.45 {O.6871
12.70 (0.501 6.35 (0.2501_

o-.L-_-+_.+..L.....1...l.._----....J---X.--------.-.;:=....:!Ij 6.35 (0.2501
6.35 {O.2501-L....--+-.....!,--'*--------------------:-~
I ROLLER 56.49 (2.2241I 12.70 (0.5001~
o 22.23 {O.8751 55.12 {2.1701 211.61 (8.3311
~1----------'---225.43
.. {8.8751------------1~~
ALL DIMENSIONS ARE NOMINAL IN MIlliMETERS AND PARENTHETICALLY IN INCHES
NOTE: Module is attached to demo fixture. TI will supply the module; customer should supply
roller and light source in production.
Figure 6. Dimensions of Module
II
7-76
261,95 (10.313) 295,28 (11.625)
228,60 (9.0 00)
224,97 (8.857)
.[±
218,62 (8. 607)
212,27 (8.357) :fJ
MODULE FITS
HERE
+-+ - 8 0,95 (3.187)
61,47 (2.42 0) I
55,12(2.17 0)
42,42 (1.67 0)
'+l r+' + _ 5 7,15 (2.250)
22,23 (0.8 75)-£ II If tJ

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Figure 7. Dimensions of Scanner Demonstration Unit
Parts List for Scanner Board

DEVICE SCHEMATIC
DEVICE TYPE
CATEGORY NAME
U1 TIBPAL 16R4-1 OCN (20-pin) en
U2 TL 1591 CP (8-pin) c:::
o
'';;
U3 NE5534P (8-pin)
ca
U4 SN75369 (8-pin) (.)
Chips t
U5 SN75369P (8-pin) Q.
Q.
U7
U8
LM310N (8-pin)
TL5501 CN (16-pin)
«
U9
t All chips have 2.54-mm (0.100 in) center spacing.

LM310N (8-pin)
II
7-77
Parts List for Scanner Board (Continued)
DEVICE SCHEMATIC
DEVICE TYPE WVDCt
CATEGORY NAME
01 2N3906
02 2N3904
Transistors
03 2N3904
04 SD214DE
R1 2.2 kG
R2 390 G
R3 120 G
R4 120 G
R5 5.1 kG
R6 150 G
R7 150 G
Resistors t R8 680 G
R9 18 kG
R10 1 kG
R11 75 kG
CR2 1 kG
CR1 1 kG
R20 2.5 kG
R21 10 kG
R16 5 kG (3299 W)
R16 5 kG (3299 W)
Potentiometers §
R16 5 kG (3299 W)
R16 5 kG (3299 W)
C1 0.1 JtF 50 V
C2 0.1 JtF 50 V
C3 10 JtF 35 V
Capacitors C4 10 JtF 35 V
(see Notes 1, 2, and 3) C5 0.1 JtF 50 V
C6 0.1 JtF 50 V
C7 0.1 JtF 50 V
C8 0.1 JtF 50 V
II tWVDC-Working dc voltage
tAli resistors are 1/4 Wand have a 5% tolerance.
§Potentiometers are 1/2 W @ 70 DC and are three-lead, in-line potentiometers with 2,54-mm
(0.100 in) center spacing and are adjusted from the top.
NOTES: 1. Use 5-mm (0.200 in) spacing between leads of each capacitor.
2. The 10-JtF and 100-JtF capacitors are tantalum.
3. All O. 1-JtF capacitors are ceramic.
7-78
Parts List for Scanner Board (Concluded)
DEVICE SCHEMATIC
DEVICE TYPE WVDCt
CATEGORY NAME
C9 0.1 JLF 50 V
C10 0.1 JLF 50 V
C11 0.1 JLF 50 V
C13 0.1 JLF 50 V
C14 0.1 JLF 50 V
C15 10 JLF 35 V
C16 10 JLF 35 V
C17 0.1 JLF 50 V
C18 0.1 JLF 50 V
Capacitors
C19 10 JLF 35 V
(see Note 1, 2, and 3)
C22 100 JLF 20 V
C23 0.1 JLF 50 V
C24 0.1 JLF 50 V
C27 0.1 JLF 50 V
C28 10 JLF 35 V
C29 0.1 JLF 50 V
C30 0.1 JLF 50 V
C32 100 pF 200 V
C33 100 pF 200 V
C34 22 pF 200 V
L1 470 JLH
Inductors L2 1 mH
L3 1 mH
J1:j: 102444-5
Connectors
J2§ 1-102445-6
Test point pins TP1-TP9 T49 VI
I::
tWVDC-Working dc voltage o
"+:
:j: J 1 10-pin straight post, double-row header connector with 2,54-mm (0.100 in) center CC
(.)
spacing.
§J2 16-pin right-angle post, single-row connector with 2,54-mm (0.100 in) center spacing. Co
NOTES: 1. Use 5-mm (0.200 in) spacing between leads of each capacitor.
c.
2. The 10-JLF and 100-JLF capacitors are tantalum.
<t
3. All O. 1-JLF capacitors are ceramic.
II
7-79
......
00
o
II suo!.e~!lddv TP
5V 3 V ADJUST
TPL VIDEO OUT

Rl+ TP2, a,s,
TP3 TP3. RCK
lSB TP4, XCK
MCK 8 (
• 11 ClK
2
13 10 RCK
6 XCK
liDO 4 7 ClK 06 11 TP5. TCK
TP6, VOO
Ul GNO 5, 7, 9 9 V CCO 05 12
TP7, 5 V
5V PAL Rl C6
Cl* 120 CCO VREF 2
10 VCCA U8 04 13 TP8, 3 V
10,11 RCK 18 AID TP9. GNO
CONN R5 14 VCCA 03 14
SIH 19hc2 INT C13T
Jl VREFl 15 VCCO 02 15 Jl
TCK 17 TP2 ~
I
01 16
1. INT VREF
MS8
2. VREF
3, a,s.
VOO 4( •• M I 4. VOO
5, GNO
R17 VIH 6. XCK
7. GNO
8. TCK
9, GNO
10. RCK
J2
Vil 1. GNO
2. VIDEO OUT
3, GNO
VIDEO OUT
3 4.VOO
')6 • • )2
5, CLAMP
6,5 V
7. Vil
8. MCK
R13 9. GNO
V~
10. XCK
R18~ 11,06 lSB
NOTES; 1. All resistors are 1 r4 W ·5% 12.05
2, Q2 provides "VIH 13.04
3, R16 provides 3 "V 14,03
4. Component values on separate sheet
15.02
5, --connector Jl pins
16,01
6. --1connector J2 pins
Figure 8. Scanner Board SBl

NOTES
NOTES
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~
TEXAS
INSTRUMENTS
Printed in U.S.A . SO YD002 A

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1990 TI Optoelectronics Data Book

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1990 1990 Linear Products

Data Book Contents Document No.

• Linear Circuits Vol Operational Amplifiers SLYD003

• Linear Circuits Vol 2 A/D and D/A Converters SLYD004

• Linear Circuits Vol 3 Supervisor Functions SLYD005

• Telecommunications Equipment Line Interfaces SCTD001A

• Optoelectronics and Optocouplers SOYD002A

• Interface Circuits High-Voltage (Display) Drivers SLYD002

• Speech System Manuals TSP50C4X Family SPSS010

CCD Image Sensors and Support Functions

Intelligent LED Displays

Infrared Emitters and Phototransistors

Quality and Reliability

CCD Image Sensors, Optocouplers,

Copyright © 1990. Texas Instruments Incorporated

• CCD Linear Image Sensors

Texas Instruments Incorporated

CCD Image ..8ensorsand .SupportFunctioris

UtJI8Ul[V ctncl·. . Sefiability

TYPE PAGE TYPE PAGE

TYPE PAGE TYPE PAGE

ao TIL 128A ........................ .

...3 TIL132 .......................... .

1-6 TEXAS ."

recommended support functions for linear image sensors

optocouplers, 6-pin plastic DIP and metal can

3 4N35" 3.54 2.5 100

tJAN, JANTX, JANTXV levels to MIL-S-19500/486A USAF are also available.

1-8 TEXAS . "

optocouplers. 6-pin plastic DIP and metal can (continued)

TEXAS . " 1-9

optocouplers, 6-pin plastic DIP TRIAC driver 25 DC unless otherwise noted)

OPI8014 Inverter Totem pole 10 mA 1.4 70 ns 5 ~s 3.54 kV de

... IN5725 7 rnA 25 nA 50 rnW

::s CNX35 Quality Technologies Corp. TIl126

O· CNYI7-4 General Electric TIl128 B

::s CNYI8-2 Siemens TIL120 B

TEXAS "'I} 1-19

1-20 TEXAS " ,

PS2018-M NEG TIL126 A Q)

Index to Glossary by Symbols and Abbreviations

Unit Symbol Note

t International System (SI) units.

Symbol Prefix Multiple

Charge-Coupled Device (CCDI

Charge-Coupled Image Sensor

Charge-Transfer Device (CTDI

Color Temperature (of a light sourcel

Current Transfer Ratio, DC (of an Optocouplerl (hF or CRTI

Dark Current (10)

:s Delay Time ltd)

Demodulation Bandwidth (B)

Fall Time (tf)

Forward Current (IF)

Forward Voltage (VF)

Half-Intensity Beam Angle (OHI)

1-30 TEXAS " ,

A displayed view of one or more objects or parts of objects.

Light Current (lL)

Light-Emitting Diode (LED)

Luminance (Lv) (Photometric Brightness)

-3. TYPICAL UNITS: Im*s.

Luminous Flux (cJ>v)