Field Effect Transistors

Field Effect Transistors (FET) View Answer Discuss in
Forum Workspace Report
1. Junction Field Effect Transistors (JFET)

contain how many diodes? 4. D-MOSFETs are sometimes used in
A. 4 series to construct a cascode high-
frequency amplifier to overcome the loss
B. 3 of:
A. low output impedance
C. 2
B. capacitive reactance
D. 1
Answer: Option C C. high input impedance
Explanation:
No answer description available for this D. inductive reactance
question. Let us discuss. Answer: Option C
View Answer Discuss in Explanation:
Forum Workspace Report No answer description available for this
question. Let us discuss.
View Answer Discuss in
2. When an input delta of 2 V produces a Forum Workspace Report
transconductance of 1.5 mS, what is the
drain current delta?
A. 666 mA 5. A "U" shaped, opposite-polarity material
built near a JFET-channel center is called
B. 3 mA the:
A. gate
C. 0.75 mA
B. block
D. 0.5 mA
Answer: Option B C. drain
Explanation:
No answer description available for this D. heat sink
question. Let us discuss. Answer: Option A
6. When testing an n-channel D-MOSFET,
resistance G to D = , resistance G to S
3. When not in use, MOSFET pins are kept = , resistance D to SS = and 500 ,
at the same potential through the use of: depending on the polarity of the
ohmmeter, and resistance D to S =
A. shipping foil
500 . What is wrong?
B. nonconductive foam A. short D to S
C. conductive foam B. open G to D
D. a wrist strap C. open D to SS

Answer: Option C D. nothing
Explanation:
No answer description available for this Answer: Option D
question. Let us discuss. Explanation:
No answer description available for this the maximum drain current with the
question. Let us discuss. D.
source shorted
Forum Workspace Report Answer: Option C
Explanation:
No answer description available for this
7. In the constant-current region, how will
the IDS change in an n-channel JFET?
A. As VGS decreases ID decreases.
B. As VGS increases ID increases.

10. What is the input impedance of a
As VGS decreases ID remains common-gate configured JFET?
C.
constant. A. very low
As VGS increases ID remains B. low
D.
constant.
Answer: Option A C. high
Explanation: D. very high
question. Let us discuss. Answer: Option A
1. JFET terminal "legs" are connections to
the drain, the gate, and the:
8. A MOSFET has how many terminals? A. channel
A. 2 or 3 B. source
B. 3 C. substrate
C. 4 D. cathode
D. 3 or 4 Answer: Option B
Explanation:
Answer: Option D No answer description available for this
Explanation: question. Let us discuss.
No answer description available for this View Answer Discuss in
question. Let us discuss. Forum Workspace Report
12. A very simple bias for a D-MOSFET is
called:
9. IDSS can be defined as:
A. self biasing
A. the minimum possible drain current
B. gate biasing
the maximum possible current with
B.
VGS held at –4 V C. zero biasing
the maximum possible current with D. voltage-divider biasing
C.
VGS held at 0 V
Answer: Option C
Explanation:
No answer description available for this 16. Which JFET configuration would connect a high-resistance
question. Let us discuss. load?
View Answer Discuss in A. source follower
B. common-source
13. With the E-MOSFET, when gate input C. common-drain

voltage is zero, drain current is:
D. common-gate
A. at saturation
Answer: Option A
B. zero Explanation:
No answer description available for this question. Let us di
C. IDSS View Answer Discuss in Forum Workspace Report
D. widening the channel

Answer: Option B 17. How will electrons flow through a p-
Explanation: channel JFET?
A. from source to drain
View Answer Discuss in B. from source to gate
C. from drain to gate
14. With a 30-volt VDD, and an 8-kilohm drain D. from drain to source
resistor, what is the E-MOSFET Q point Answer: Option D
voltage, with ID = 3 mA? Explanation:
A. 6V No answer description available for this
B. 10 V View Answer Discuss in
C. 24 V
D. 30 V 18. When VGS = 0 V, a JFET is:

Answer: Option A
A. saturated
Explanation:
No answer description available for this B. an analog device
View Answer Discuss in C. an open switch
D. cut off
Answer: Option A
15. When an input signal reduces the channel size, the process is called:
Explanation:
A. enhancement No answer description available for this
B. substrate connecting View Answer Discuss in
C. gate charge
D. depletion 19. When applied input voltage varies the

Answer: Option D resistance of a channel, the result is
called:
A. saturization C. resistivity
B. polarization D. gain
C. cutoff Answer: Option A

Explanation:
D. field effect No answer description available for this
Answer: Option D View Answer Discuss in
Explanation: Forum Workspace Report
Forum Workspace Report 23. Which type of JFET bias requires a
negative supply voltage?
A. feedback
20. When is a vertical channel E-MOSFET
used? B. source
A. for high frequencies C. gate
B. for high voltages D. voltage divider
C. for high currents Answer: Option C

Explanation:
D. for high resistances No answer description available for this
Answer: Option C View Answer Discuss in
21. When the JFET is no longer able to
control the current, this point is called the:
24. How will a D-MOSFET input impedance
A. breakdown region change with signal frequency?
B. depletion region As frequency increases input
A.
impedance increases.
C. saturation point
As frequency increases input
B.
D. pinch-off region impedance is constant.
Answer: Option A
As frequency decreases input
Explanation: C.
impedance increases.
question. Let us discuss. As frequency decreases input
View Answer Discuss in D.
impedance is constant.
Answer: Option C
Explanation:
22. With a JFET, a ratio of output current question. Let us discuss.
change against an input voltage change is View Answer Discuss in
called: Forum Workspace Report
A. transconductance
B. siemens
25. The type of bias most often used with E-
MOSFET circuits is:
A. constant current
B. drain-feedback
C. voltage-divider
D. zero biasing
Answer: Option B
26. The transconductance curve of a JFET is

a graph of:
A. IS versus VDS
B. IC versus VCE
C. ID versus VGS
A. 5.2 V
D. ID × RDS
Answer: Option C B. 4.2 V
Explanation:
No answer description available for this C. 3.2 V
D. 2.2 V
Forum Workspace Report Answer: Option A
Explanation:
27. The common-source JFET amplifier has:
a very high input impedance and a Forum Workspace Report
A.
relatively low voltage gain
a high input impedance and a very

B. 29. The overall input capacitance of a dual-
high voltage gain
gate D-MOSFET is lower because the
a high input impedance and a devices are usually connected:
C.
voltage gain less than 1 A. in parallel
D. no voltage gain B. with separate insulation
Answer: Option A
Explanation: C. with separate inputs
D. in series
View Answer Discuss in Answer: Option D
Forum Workspace Report Explanation:
28 Using voltage-divider biasing, what is the
. voltage at the gate VGS?
30. What is the transconductance of an FET 1. To get a negative gate-source voltage in a
when ID = 1 mA and VGS = 1 V? self-biased JFET circuit, you must use a
________.
A. 1 kS
A. negative gate supply voltage
B. 1 mS
B. ground
C. 1 k
C. voltage divider
D. 1 m
D. source resistor
Answer: Option B
Answer: Option D
Explanation:
31. Which component is considered to be an No answer description available for this
"OFF" device? question. Let us discuss.
A. transistor Forum Workspace Report
B. JFET
C. D-MOSFET 2. One advantage of voltage-divider bias is

that the dependency of drain current, ID,
D. E-MOSFET on the range of Q points is _________.
Answer: Option D A. reduced
Explanation:
No answer description available for this B. increased
View Answer Discuss in C. not affected
D. none of the above
Answer: Option A
32. In an n-channel JFET, what will happen at Explanation:
the pinch-off voltage? No answer description available for this
the value of VDS at which further View Answer Discuss in
A. increases in VDS will cause no Forum Workspace Report
further increase in ID
the value of VGS at which further

B. decreases in VGS will cause no 3. Changing ________ can control the
further increases in ID voltage gain of a common-source
amplifier.
the value of VDG at which further
A. the input voltage
C. decreases in VDG will cause no
further increases in ID B. m
the value of VDS at which further

C. VDD
D. increases in VGS will cause no
further increases in ID D. RS
Answer: Option A View Answer Discuss in
4. A __________ change in VDS will produce
a __________ change in ID.
A. small, large
B. large, small
C. large, large
D. small, small
Answer: Option B
Explanation:
5. A _______________ JFET amplifier

provides a voltage gain of less than one.
A. common-source
B. common-gate
C. common-drain
D. cascode amplifier
Answer: Option C

Field Effect Transistors

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Field Effect Transistors (FET) View Answer Discuss in

Forum Workspace Report

1. Junction Field Effect Transistors (JFET)

C. conductive foam B. open G to D

D. a wrist strap C. open D to SS

B. As VGS increases ID increases.

13. With the E-MOSFET, when gate input C. common-drain

D. widening the channel

D. 30 V 18. When VGS = 0 V, a JFET is:

D. depletion 19. When applied input voltage varies the

C. cutoff Answer: Option A

A. for high frequencies C. gate

B. for high voltages D. voltage divider

C. for high currents Answer: Option C

26. The transconductance curve of a JFET is

a high input impedance and a very

C. D-MOSFET 2. One advantage of voltage-divider bias is

the value of VGS at which further

the value of VDS at which further

5. A _______________ JFET amplifier

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