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BIPOLAR JUNCTION
TRANSISTORS (BJTs)
By : Syed Akhmal
1
INTRODUCTION
What is transistor?
A three-terminal device whose output current, voltage
and/or power are controlled by its input.
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LECTURE OUTLINE
1. BJT structure
2. Basic BJT operations
3. BJT Characteristics and Parameters
4. BJT as an amplifier
5. BJT as a switch
6. Troubleshooting
Summary
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1. BJT STRUCTURE
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1. BJT STRUCTURE
The BJT is constructed with three doped semiconductor
regions separated by two pn junctions.
The three region are called emitter (E),base (B) and collector
(C)
The BJT have 2 types:
1. Two n region separate by a p region – called npn
2. Two p region separated by a n region – called pnp
The pn junction joining the base region and the emitter region
is called the base-emiter junction
The pn junction joining the base region and the collector region
is call base-collector junction
The base region is lightly doped and very thin compared to the
heavily doped emitter and the moderately doped collector
region 6
1. BJT STRUCTURE (CONT.)
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1. BJT STRUCTURE (CONT.)
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1. BJT STRUCTURE (CONT.)
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1. BJT STRUCTURE (CONT.)
Transistor Currents:
The directions of the currents in npn transistor and pnp transistor are
shown in the figure.
The emitter current (IE) is the sum of the collector current (IC) and the
base current (IB)
I E I B IC
IB << IE or IC
The capital letter – dc value
Transistor is a current-controlled device ; the value of collector and
emitter currents are determined by the value of base current.
An increase or decrease in value of IB causes similar change in values
of IC and IE.
Current gain (β) factor
by which current increases
C I I DC B from base of transistor to
its collector.
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1. BJT STRUCTURE (CONT.)
Transistor Voltages:
VCC – collector supply voltage. This is a power supply voltage
applied directly to collector of transistor.
VBB – base supply voltage. this is dc voltage used to bias base
of transistor.
VEE – emitter supply voltage. dc biasing voltage and in many
cases, VEE is simply a ground connection.
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1. BJT STRUCTURE (CONT.)
Transistor Voltages:
VC – dc voltage measured from collector terminal of
component to ground
VB – dc voltage measured from base terminal to ground.
VE – dc voltage measured from emitter terminal to ground.
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1. BJT STRUCTURE (CONT.)
Transistor Voltages:
VCE – dc voltage measured from collector to emitter terminal
of transistor.
VBE – dc voltage measured from base to emitter terminal of
transistor.
VCB – dc voltage measured from collector to base terminal of
transistor.
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2. BJT OPERATION
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2. BJT OPERATION
To operate the transistor properly, the two pn junction
must be correctly biased with external dc voltages.
The figure shown the proper bias arrangement for both
npn and pnp transistor for active operation as an
amplifier.
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2. BJT OPERATION (CONT..)
Transistor is made of 3 separate semiconductor
materials that joined together to form two pn junction.
Point at which emitter and base are joined forms a
single pn junction base-emitter junction.
Collector-base junction point where base and
collector meet.
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2. BJT OPERATION REGION
Cutoff region
Both transistor junctions
are reverse biased.
With large depletion
region between C-B and
E-B, very small amount
of reverse current, ICEO
passes from emitter to
collector and can be
neglected.
So, VCE = VCC
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2. BJT OPERATION REGION
Saturation region
Both transistor junctions are
forward-biased.
IC reaches its maximum value
as determined by VCC and total
resistance in C-E circuit.
IC is independently from
relationship of β and IB.
VBE is approximately 0.7V and
VCE < VBE.
VCC
IC
RC RE 18
2. BJT OPERATION REGION
Active region
BE junction is forward biased
and the BC junction is reverse
biased.
All terminal currents have
some measurable value.
The magnitude of IC depends
on the values of β and IB.
VCE is approximately near to
0.7V and VCE falls in ranges
VBE<VCE<VCC.
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3. BJT CHARACTERISTICS &
PARAMETERS
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3. BJT CHARACTERISTICS & PARAMETERS
IC
DC
IB
The ratio of the dc collector current (IC) to the dc emitter current (IE) is
the dc alpha ( DC ) – less used parameter in transistor circuits
Range value-> 0.95< DC <0.99 or greater , but << 1 (Ic< IE )
IC
DC
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IE
3. BJT CHARACTERISTICS & PARAMETERS (CONT.)
Current and Voltage Analysis:
The current and voltage can be identified as follow:
Current: Voltage:
dc base current, IB dc voltage at base with respect to emitter, VBE
dc emitter current, I E dc voltage at collector with respect to base, VCB
dc collector current, I C dc voltage at collector with respect to emitter, VCE
forward-biased the
base-emitter junction reverse-biased the
base-collector junction
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SOLUTION EXAMPLE 1
When BE junction is FB, act as normal diode. So,
VBE=0.7V.
The base current, VBB VBE 5 0.7
IB 430A
RB 10k
Collector current,
I C DC I B 150(430A) 64.5mA
Emitter current,
I E I C I B 64.5mA 430A 64.9mA
Solve for VCE and VCB.
VCE VCC I C RC 10V (64.5mA )(100) 3.55V
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variable voltage
BJT CHARACTERISTICS & PARAMETERS (CONT.)
COLLECTOR CHARACTERISTIC CURVE:
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BJT CHARACTERISTICS & PARAMETERS (CONT.)
Collector Characteristic Curve:
Assume that VBB is set to produce a certain value of IB and VCC is zero.
At this condition, BE junction and BC junction are forward biased
because the base is approximately 0.7V while the emitter and the
collector are zero.
IB is through the BE junction because of the low impedance path to
ground, therefore IC is zero.
When both junctions are forward biased – transistor operate in saturation
region.
As VCC increase, VCE is increase gradually, IC increase – indicated by
point A to B.
IC increase as VCC is increased because VCE remains less than 0.7V
due to the forward biased BC junction.
When VCE exceeds 0.7V, the BC becomes reverse biased and the 30
transistor goes into the active or linear region of its operation.
BJT CHARACTERISTICS & PARAMETERS (CONT.)
Collector Characteristic Curve:
Once BC junction is reverse bias, IC levels off and remains constant for
given value of IB and VCE continues to increase.
Actually IC increases slightly as VCE increase due to widening of the BC
depletion region
This result in fewer holes for recombination in the base region which
effectively caused a slight increase in I C DC I B indicated in point
B and C.
When VCE reached a sufficiently high voltage, the reverse biased BC
junction goes into breakdown.
The collector current increase rapidly – as indicated at the right point C
The transistor cannot operate in the breakdown region.
When IB=0, the transistor is in the cutoff region although there is a very
small collector leakage current as indicated – exaggerated on the graph
for purpose of illustration.
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BJT CHARACTERISTICS & PARAMETERS (CONT.)
DC Load Line:
Cutoff and saturation can be illustrated in relation to
the collector characteristic curves by the use of a load line.
DC load line drawn on the connecting cutoff and saturation point.
The bottom of load line is ideal
cutoff where IC=0 & VCE=VCC.
The top of load line is saturation
where IC=IC(sat) & VCE =VCE(sat)
In between cutoff and saturation
is the active region of transistor’s
operation.
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EXAMPLE 2
Determine whether or not the transistor in figure below is
in saturation. Assume VCE(sat) = 0.2V
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SOLUTION EXAMPLE 2
First, determine IC(sat),
VCC VCE ( sat) 10 0.2
I C ( sat) 9.8mA
RC 1.0k
Now, see if IB is large enough to produce IC(sat),
VBB VBE 3 0.7
IB 0.23mA
RB 10k
I C DC I B 50(0.23) 11.5mA
With specific βDC, this base current is capable of producing
IC greater than IC(sat). Thus, transistor is saturated and IC
= 11.5mA is never reached. If further increase IB, IC
remains at its saturation value.
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BJT CHARACTERISTICS & PARAMETERS (CONT.)
More About beta, DC , hFE:
-Important parameter for BJT
-Varies both IC & temperature
-Keeping the junction temperature
constant, IC cause DC
-Further increase in IC beyond this
max. point cause DC to decrease
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4. BJT AS AN AMPLIFIER
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4. BJT AS AN AMPLIFIER
• Transistor amplify current
because I C DC I B
• IB is very small, so IC ≈ IE.
• Amplification of a small ac
voltage by placing the ac
signal source in the base
circuit.
• Vin is superimposed on the
DC bias voltage VBB by
connecting them in series
with base resistor RB.
• Small changes in the base
current circuit causes large
changes in collector current
circuit.
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4.BJT as an Amplifier
VOLTAGE GAIN:
r' e internal ac emitter resistance
•Ac emitter current is Ie ≈ Ic = Vb / r’e.
Vc IeRC RC
AV AV
Vb Ier ' e r' e 40
5. BJT AS A SWITCH
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5. BJT AS A SWITCH
A transistor when used as a switch is simply being biased so
that it is in:
1. cutoff (switched off)
2. saturation (switched on)
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5. BJT as a switch
CONDITIONS IN CUTOFF
CONDITIONS IN SATURATION
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SOLUTION EXAMPLE 3
a) When VIN=0V, the transistor is in cutoff (act as open
switch), so VCE(cutoff)=VCC = 10V.
b) Since VCE(sat) is neglected (assumed 0V),
VCC 10V
I C ( sat ) 10mA
RC 1.0k
I C ( sat ) 10mA
I B (min) 50 A
DC 200
This is the value of IB necessary to drive transistor to point
of saturation.
c) When transistor is ON, VBE=0.7V. The voltage across RB is
VRB=VIN – VBE = 5 – 0.7 = 4.3V
By Ohm’s Law, the maximum value of RB is:
V RB 4.3
RB (max) 86k
I B (min) 50
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6. TROUBLESHOOTING
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6. TROUBLESHOOTING
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6. TROUBLESHOOTING
Possible faults are open bias resistors, open or resistive connections,
shorted connections and open or short internal to the transistor itself.
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6. TROUBLESHOOTING
The diode test function of a multimeter is more reliable than
using an ohmmeter. Make sure to note whether it is an npn or
pnp and polarize the test leads accordingly.
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6. TROUBLESHOOTING
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SUMMARY
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