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SEMICONDUCTOR TECHNICAL DATA by MGW20N60D/D

   
 

  

    Motorola Preferred Device

  

N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
20 A @ 90°C
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
32 A @ 25°C
with a soft recovery ultra–fast rectifier and uses an advanced
600 VOLTS
termination scheme to provide an enhanced and reliable high
SHORT CIRCUIT RATED
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–247 Package with
C
Isolated Mounting Hole
• High Speed Eoff: 60 mJ per Amp typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
G
• Robust High Voltage Termination G
• Robust RBSOA C
E
E

CASE 340F–03, Style 4

TO–247AE

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit
Collector–Emitter Voltage VCES 600 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc
Gate–Emitter Voltage — Continuous VGE ± 20 Vdc
Collector Current — Continuous @ TC = 25°C IC25 32 Adc
— Continuous @ TC = 90°C IC90 20
— Repetitive Pulsed Current (1) ICM 64 Apk
Total Power Dissipation @ TC = 25°C PD 142 Watts
Derate above 25°C 1.14 W/°C

Operating and Storage Junction Temperature Range TJ, Tstg – 55 to 150 °C

Short Circuit Withstand Time tsc 10 ms
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT RθJC 0.88 °C/W
— Junction to Case – Diode RθJC 2.00
— Junction to Ambient RθJA 45
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C
Mounting Torque, 6–32 or M3 screw 10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

 Motorola TMOS
Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1
MGW20N60D
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage BVCES Vdc
(VGE = 0 Vdc, IC = 250 µAdc) 600 — —
Temperature Coefficient (Positive) — 870 — mV/°C
Zero Gate Voltage Collector Current ICES µAdc
(VCE = 600 Vdc, VGE = 0 Vdc) — — 100
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) — — 2500
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage VCE(on) Vdc
(VGE = 15 Vdc, IC = 10 Adc) — 2.30 2.85
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C) — 2.20 —
(VGE = 15 Vdc, IC = 20 Adc) — 2.85 3.65
Gate Threshold Voltage VGE(th) Vdc
(VCE = VGE, IC = 1 mAdc) 4.0 6.0 8.0
Threshold Temperature Coefficient (Negative) — 10 — mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) gfe — 12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Cies — 2280 — pF
Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc,
Coes — 165 —
f = 1.0 MHz)
Transfer Capacitance Cres — 12 —

SWITCHING CHARACTERISTICS (1)

Turn–On Delay Time td(on) — 59 — ns
(VCC = 360 Vdc, IC = 20 Adc,
Rise Time VGE = 15 Vdc, L = 300 mH tr — 61 —
Turn–Off Delay Time RG = 20 Ω, TJ = 25°C) td(off) — 150 —
Energy losses include “tail”
Fall Time tf — 212 —
Turn–Off Switching Loss Eoff — 0.60 0.85 mJ
Turn–On Switching Loss Eon — 0.75 —
Total Switching Loss Ets — 1.35 —
Turn–On Delay Time td(on) — 51 — ns
(VCC = 360 Vdc, IC = 20 Adc,
Rise Time VGE = 15 Vdc, L = 300 mH tr — 77 —
Turn–Off Delay Time RG = 20 Ω, TJ = 125°C) td(off) — 184 —
Energy losses include “tail”
Fall Time tf — 392 —
Turn–Off Switching Loss Eoff — 1.20 — mJ
Turn–On Switching Loss Eon — 1.50 —
Total Switching Loss Ets — 2.70 —
Gate Charge QT — 74 — nC
(VCC = 360 Vdc, IC = 20 Adc,
Q1 — 19 —
VGE = 15 Vdc)
Q2 — 27 —
DIODE CHARACTERISTICS
Diode Forward Voltage Drop VFEC Vdc
(IEC = 10 Adc) — 1.50 1.90
(IEC = 10 Adc, TJ = 125°C) — 1.30 —
(IEC = 20 Adc) — 1.70 2.15
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (continued)

2 Motorola TMOS Power MOSFET Transistor Device Data

 MGW20N60D
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time trr — 117 — ns

(IF = 20 Adc, VR = 360 Vdc, ta — 70 —

dIF/dt = 200 A/µs) tb — 47 —
Reverse Recovery Stored Charge QRR — 1.2 — µC
Reverse Recovery Time trr — 166 — ns

(IF = 20 Adc, VR = 360 Vdc, ta — 98 —

dIF/dt = 200 A/µs, TJ = 125°C) tb — 68 —
Reverse Recovery Stored Charge QRR — 1.9 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance LE nH
(Measured from the emitter lead 0.25″ from package to emitter bond pad) — 13 —

TYPICAL ELECTRICAL CHARACTERISTICS

60 60
TJ = 25°C VGE = 20 V 12.5 V TJ = 125°C VGE = 20 V 12.5 V
IC, COLLECTOR CURRENT (AMPS)

17.5 V IC, COLLECTOR CURRENT (AMPS) 17.5 V

15 V 15 V
40 40
10 V
10 V

20 20

0 0
0 2 4 6 8 0 2 4 6 8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

Figure 1. Output Characteristics, TJ = 25°C Figure 2. Output Characteristics, TJ = 125°C

VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

40 3.2
VGE = 15 V
VCE = 100 V
80 µs PULSE WIDTH IC = 20 A
IC, COLLECTOR CURRENT (AMPS)

5 µs PULSE WIDTH
30
2.8
TJ = 125°C
15 A
20
25°C
2.4
10 A
10

0 2
5 6 7 8 9 10 11 – 50 0 50 100 150
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation

Voltage versus Junction Temperature

Motorola TMOS Power MOSFET Transistor Device Data 3

 MGW20N60D
4000 16

VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)

VCE = 0 V TJ = 25°C QT

3200
12
C, CAPACITANCE (pF)

Cies
2400 Q1 Q2

8
1600

TJ = 25°C
4
800 Coes IC = 20 A

Cres
0 0
0 5 10 15 20 25 0 20 40 60 80
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC)

Figure 5. Capacitance Variation Figure 6. Gate–to–Emitter Voltage versus

Total Charge

4 4
TOTAL SWITCHING ENERGY LOSSES (mJ)

TOTAL SWITCHING ENERGY LOSSES (mJ)

VCC = 360 V VCC = 360 V
VGE = 15 V 3.5 VGE = 15 V
IC = 20 A
3.2 TJ = 125°C RG = 20 Ω
3

2.4 15 A 2.5
IC = 20 A

1.6 10 A 2
15 A
1.5
0.8 10 A
1

0 0.5
10 20 30 40 50 0 25 50 75 100 125 150
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Total Switching Losses versus Figure 8. Total Switching Losses versus
Gate Resistance Junction Temperature

3 1.6
TOTAL SWITCHING ENERGY LOSSES (mJ)

VCC = 360 V VCC = 360 V

VGE = 15 V
TURN–OFF ENERGY LOSSES (mJ)

VGE = 15 V
2.5
RG = 20 Ω TJ = 125°C IC = 20 A
TJ = 125°C
2 1.2

1.5 15 A

1 0.8
10 A
0.5

0 0.4
0 5 10 15 20 10 20 30 40 50
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS) RG, GATE RESISTANCE (OHMS)

Figure 9. Total Switching Losses versus Figure 10. Turn–Off Losses versus
Collector–to–Emitter Current Gate Resistance

4 Motorola TMOS Power MOSFET Transistor Device Data

 MGW20N60D
2 1.2
VCC = 360 V VCC = 360 V
TURN–OFF ENERGY LOSSES (mJ) VGE = 15 V

TURN–OFF ENERGY LOSSES (mJ)

VGE = 15 V
RG = 20 Ω RG = 20 Ω
1.5 TJ = 125°C
0.8

1
IC = 20 A
15 A
0.4
10 A
0.5

0 0
0 25 50 75 100 125 150 0 5 10 15 20
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)

Figure 11. Turn–Off Losses versus Figure 12. Turn–Off Losses versus
Junction Temperature Collector–to–Emitter Current
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)

100 100

IC, COLLECTOR–TO–EMITTER CURRENT (A)

10 10
TJ = 125°C

TJ = 25°C
1 1

VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1 0.1
0 0.4 0.8 1.2 1.6 2 1 10 100 1000
VFM, FORWARD VOLTAGE DROP (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

Figure 13. Typical Diode Forward Drop versus Figure 14. Reverse Biased Safe
Instantaneous Forward Current Operating Area

Motorola TMOS Power MOSFET Transistor Device Data 5

MGW20N60D
PACKAGE DIMENSIONS

–T– NOTES:
–Q– E 1. DIMENSIONING AND TOLERANCING PER ANSI
0.25 (0.010) M T B M Y14.5M, 1982.
–B– C 2. CONTROLLING DIMENSION: MILLIMETER.
4 MILLIMETERS INCHES
DIM MIN MAX MIN MAX
U L A 20.40 20.90 0.803 0.823
B 15.44 15.95 0.608 0.628
C 4.70 5.21 0.185 0.205
A D 1.09 1.30 0.043 0.051
R
E 1.50 1.63 0.059 0.064
1 2 3 F 1.80 2.18 0.071 0.086
G 5.45 BSC 0.215 BSC
H 2.56 2.87 0.101 0.113
–Y– J 0.48 0.68 0.019 0.027
P K 15.57 16.08 0.613 0.633
K L 7.26 7.50 0.286 0.295
P 3.10 3.38 0.122 0.133
Q 3.50 3.70 0.138 0.145
F H R 3.30 3.80 0.130 0.150
V J U 5.30 BSC 0.209 BSC
D V 3.05 3.40 0.120 0.134
G
0.25 (0.010) M Y Q S STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 340F–03
TO–247AE
ISSUE E

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*MGW20N60D/D*
6 ◊ Motorola TMOS Power MOSFET TransistorMGW20N60D/D
Device Data