UNIT-1

1. With the help of necessary equations, discuss the variation of AI ,AV ,Ri, and Ro with RS and RL in
Common Emitter configuration. [10]
2. For a CE configuration, what is the maximum value of RS for which Ro differs by no more than 10
percent of its value for RS = 0. The h-parameter values are hfe = 50, hie =1.1K, hre = 2.5x10−4, hoe
= 25 μA/V. [6]
3. Draw the circuit diagram of CB- amplifier and its h-parameter equivalent circuit. List out the
characteristics of a CB amplifier. [8]
4. In a single stage CB amplifier circuit, RE = 20K,RC = 10K, VEE = −20V, VCC =20V,RL =
10KandRS = 0.5K. Find AI ,Ri,Ro,AV . [8]
5. Draw the circuit diagram and low frequency equivalent circuit of common source amplifier and
derive an expression for its voltage gain. [8]
6. For the emitter follower circuit with RS = 0.5K and RL = 5K, calculate AI ,Ri,AV ,AV S, and R0.
Assume, hfe = 50, hie =1K, hoe = 25 μA/V. [8]
7. For a single stage transistor amplifier, RS=200 and RL= 5K . The h-parameter values are hfb= -
0.98, hib =21 , hrb = 2.9 x10-4, hob = 0.49 μA/V. Find AI ,AV ,AV S,Ri, andRo for the CB
transistor configuration..
8. For a single stage transistor amplifier, RS=1K and RL= 10K The h-parameter values are hfe = 50,
hie =1.1K, hre = 2.5x10-4, hoe = 25 μA/V. Find AI ,AV ,AV S,Ri, andRo for the CE transistor
configuration. (8+8)
9. Draw the circuit diagram of Common Drain amplifier and derive an expression for its Voltage gain.
10. The h-parameters of the transistor used in CE amplifier are hfe = 50, hie=1.1K, hre = 2.5x10-4, hoe
= 24μ A/V. Find out current gain and voltage gains with and without source resistance , input and
output impedances ,given that RL= 10K and RS= 1 K. (6+10)
11. Discuss the classification of amplifiers based on frequency range , type of coupling ,power delivered
, and signal handled.
12. For the Common Gate amplifier shown, derive expressions for voltage gain,input impedance and
output impedance. Power supplies are omitted for sim-plicity. Neglect capacitances. [6+10]
Figure 1

13. The h-parameters of a transistor are hfe = 50, hie = 1.1K, hre = 2.5x10 - 4, hoe = 24 μA/V Calculate
AI, AV ,AVS , Ri, and Ro. Figure2
14. Using the h-parameter model, derive expressions for current gain, input impedance, voltage gain,
and output impedance of a CE amplifier .
15. Derive the expressions for AI , AV , Ri and Ro of CC amplifier circuit.[8]
16. Consider a 1-stage CE amplifier with RS = 1K and RL = 1.2K. Using typical values of h-parameters
find AI , AV , Ri and Ro. [8]
17. Derive expression for (i) voltage gain, (ii) current gain, (iii) input impedance Ri and (iv) output
resistance Ro of a CE amplifier using h-parameter model.
18. A common collector amplifier stage uses a transistor with the following h-parameters hfe = 100, hie
=1K, Re=5kohm, Rs= 1kohm. Find AI ,AV , Ri , and Ro for the CC amplifier using approximate h-
parameter model formulae.
19. Analysis of CE amplifier with emitter resistance.
 UNIT-2

1. How multistage amplifiers are classified depending upon the type of coupling. [4]
2. 2. Write a note on distortions in amplifiers. [6]
3. In an R-C coupled amplifier, AVM = 60, fL = 50Hz and fH=100KHz. Find the values of frequencies at
which the gain reduces to 50 on either side of midband region. [6]
4. Discuss about different types of distortions that occur in amplifier circuits. [8]
5. Three identical non interacting amplifier stages in cascade have an overall gain of 1 dB down at 30 Hz
compared to mid band. Calculate the lower cutoff frequency of the individual stages. [8]
6. If eight identical amplifiers are cascaded each having fH =200 KHz, determine the overall upper 3dB
frequency f h. Assume non interacting stages. [5]
7. A two-stage amplifier circuit (CE-CC configuration) is shown in figure 2. The h-parameter values are
hfe = 50, hie=2 K , hre =6× 10−4, hoe = 25μA/V. hfc = -51, hic =2 K, hrc = 1, hoc = 25μ A/V. Find
the input and output impedances and individual, as well as overall voltage and current gains. [circuit
shown below] [16]
8. Derive the expression for the high 3-dB frequency fH of n-identical non interacting stages in terms of fH
for one stage. [5]
9. If four identical amplifiers are cascaded each having fH =100 KHz, determine the overall upper 3dB
frequency f_H. Assume non interacting stages. [5]
10. Write a short note on Bootstrapped Darlington circuit. (6)
11. Draw the circuit of two stage R-C coupled JFET amplifier and explain its working. [8]
12. Draw the circuit diagram of single stage R-C coupled BJTamplifier. Discuss the effect of an emitter
bypass capacitor on low-frequency response. [8]
13. What are the specifications of amplifiers? Explain them. Give their typical values. [6]
14. The LF parameters of a transistor at Ic = 20mA, Vce = 10V and at room temperature hie = 400 , hoe =
10 −5 A/V , hfe = 150, hre = 10−4 . At the same operating point fT = 60 MHz, and Cob = 3PF , compute
the values of all the hybrid -π parameters. [10]
15. Draw the circuit of differential amplifier and explain its working principle.
16. Explain and derive the expressions for differential mode gain A and common mode gain A of a
differential amplifier.
17. Define upper cut off and lower cut off frequencies of an amplifier. What is the significance of these
frequencies? [5]
18. A two stage amplifier is shown in figure is in CE-CC configuration. The transistor parameters are given
as β = 100 and rπ = 0.5k. Determine the overall voltage gain and current gain. Assume r0 = infinite. [6]
Figure3

19. Explain the advantages and disadvantages of (i) transformer coupling and (ii) direct coupling. Discuss
one application of each.
20. Show that gain-bandwidth product of RC coupled amplifier is constant.
21. Draw and explain the two stage amplifier with Darlington connection. Give the advantages of this
circuit.
22. Derive the expression for voltage gain and input impedance of bootstrap emitter follower circuit.
 UNIT-3

1. Draw Hybrid - π model for a transistor in the CE configuration and explain the significance of every
component in this model. [8]
2. Given a germanium p-n-p transistor whose basewidth is 10−4 cm. At room temperature and for a dc
emitter current of 2 mA, find
i. emitter diffusion capacitance,
ii. fT [Assume Diffusion constant as 47 cm2/sec].
3. Derive all components in the Hybrid - π model in terms of h parameters in CE configuration. [16]
4. Given a germanium p-n-p transistor whose basewidth is 10−4 cm. At room temperature and for a dc
emitter current of 2 mA, find
i. emitter diffusion capacitance,
ii. fT [Assume Diffusion constant as 47 cm2/sec]. [8]
5. What are the typical values of various components in Hybrid - π model? Show that at low frequencies
the Hybrid - π model with rb′e and rce taken as infinite reduces to the approximate CE h- parameter
model. [8]
6. The following low- frequency parameters are known for a given transistor at
IC = 10mA, VCE =10 V, and at room temperature,
hie = 500
hoe = 4x10−5 A/V
hfe = 100
hre = 10−4.
At the same operating point, fT = 50MHz and Cc=3PF, compute the values
of all the Hybrid - π parameters [8]
7. Draw the small-signal equivalent circuit for an emitter- follower stage at high frequencies. Find its value
of input admittance. [16 ]
8. Derive the expression for the CE short circuit current gain Ai as a function of frequency using Hybrid -
π model.
9. A single-stage CE amplifier is measured to have a voltage - gain bandwidth fH of 5 MHz with RL = 500
. Assume hf e = 100, gm=100mA/V, rbb′ = 100, ,Cc = 1pF, fT =400MHz . Find the value of the source
resistance that will give the required bandwidth.
10. Obtain the theoretical expressions for f1n and f2n when n-stages of identical amplifiers are cascaded.
[10]
11. For a given transistor (BJT), hfe = 100. fB = 5 KHzs. Determine the Band-width of the transistor. If the
lower cut off frequency f1 = 100 Hzs and upper cut off frequency f2 = 100 KHzs, then determine the
midband frequency f0 of the amplifier circuit. [6]
12. Explain in detail about the variation of hybrid parameters with respect to collector current, collector to
emitter voltage and temperature.
13. Derive the relation between ft abd fβ.
 UNIT-4

1. Classify large signal amplifiers based on its operating point. Distinguish these amplifiers in terms of the
conversion efficiency. [8]
2. Draw the push-pull power amplifier circuit. Derive the expression for the output current in push ?pull
amplifier with base current as ib = Ibm sinwt. [8]
3. 3 Draw the complimentary symmetry class-B power amplifier and explain its operation. [8]
4. In series fed Class - A power amplifier, explain the importance of the position of operating point on
output signal swing. Show that the conversion efficiency is 25%. [8]
5. Discuss the origin of various distortions in transistor amplifier circuits.
6. Draw the push-pull power amplifier circuit. Derive the expression for the output current in push ?pull
amplifier with base current as ib = Ibm sinwt. [8]
7. Define thermal resistance of a power BJT. [4]
8. A transistor with a maximum junction temperature specification of 1500C dissipates a maximum power
of 40 watts at a case temperature of 250C and 2watts at an ambient temperature of 250C. Find
i. The thermal resistance between the junction and the case.
ii. The thermal resistance between the junction and ambient.
iii. Maximum power dissipation capability for safe operation in free space at a temperature of
500C. [4x3]
9. In transformer coupled Class ? A power amplifier, show that the conversion efficiency is 50%. [8 ]
10. 10.Discuss in detail the cross-over distortion. How do you avoid the cross over distortion in power
amplifier circuit? Discuss in detail. [8]
11. What is Harmonic distortion in transistor amplifier circuits? Discuss second harmonic distortion. [8]
12. A single transistor is operating as an ideal class B amplifier with a 500 load. A dc meter in the collector
circuit reads 10mA. How much signal power is delivered to the load? [8]
13. Write short notes on requirement and types of heat sinks for power dissipation in large signal amplifiers.
[6]
14. With the help of a neat circuit diagram, explain the operation of a complementary symmetry configured
class B power amplifier. [6]
15. Compare and contrast push-pull and complementary-symmetry configurations for class B power
amplifiers. [4]
16. Derive the expression for maximum collector Power Dissipation Pc(Max) in the case of class B power
amplifiers. [8]
17. What are the different types of coupling employed in Power Amplifiers? Compare them critically. [8+8]