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Article history: The effect of different dopant anions on deposition and characteristics of polypyrrole (PPy) thin film has
Received 30 July 2014 been studied in this work. Ultra-thin films of conducting PPy were deposited on insulating surfaces of
Received in revised form 30 January 2015 glass and oxidized silicon wafer by in situ chemical polymerization in the presence of different anionic
Accepted 17 March 2015
dopants including sodium dodecylbenzenesulfonate, sodium dodecyl sulfate, α-naphthalene sulfonic
Available online 8 April 2015
acid, anthraquinone-2-sulfonic acid sodium salt monohydrate/5-sulfosalicylic acid dehydrate, and camphor
Keywords:
sulfonic acid. Hydrophilic/hydrophobic properties and morphology of the self-assembled monolayer of N-
Thin film (3-trimethoxysilylpropyl)pyrrole, the surface modifying agent in this work, and PPy thin films were
Deposition characterized before and after deposition by contact angle measurements, field emission scanning electron
Conducting polymers microscopy, and atomic force microscopy. Chemical structure, thickness, and conductivity of the thin films
Polypyrrole were also studied by attenuated total reflectance Fourier transform infrared spectrometer, ellipsometry,
Anionic dopants and four-point probe measurements. The results showed deposition of thin films of conducting PPy with
comparable thickness in the range of 6–31 nm and different morphologies, uniformity, and smoothness
with average roughness in the range of 0.3–6 nm and relatively high range of conductivity on the modified
surfaces.
© 2015 Elsevier B.V. All rights reserved.
1. Introduction synthesizing with dopant counter ions, thin films of them are typi-
cally formed by electrochemical methods on conducting surfaces
Conducting electroactive polymers and their nanostructures have such as metals or glass coated with indium tin oxide [4,8], or by in
unique electronic, magnetic, and optical properties similar to semi- situ chemical (oxidative) polymerization on insulating surfaces
conductors or metals resulted from delocalized π-conjugated such as glass or plastic [4,9], or frequently by plasma [10] or vapor
structure and unusual doping concept, reversible doping/dedoping deposition techniques [11–13].
process and electrical redox reversibility while retained their flexi- Conducting polymer nanostructures, especially one-dimensional
bility, ease of processing and lightweight [1–3]. The mentioned out- (1D) nanostructures including nanowires and nanotubes and two-
standing properties in addition to chemically tunable properties dimensional (2D) nanostructures as ultra-thin films with nanoscale
have leaded conducting polymers to be applicable in the fields such roughness or micro-nanoporosity deposited on the surface have
as in photovoltaic and electrochromic devices, electromechanical ac- attracted great interest in nanoscience and nanotechnology for fabrica-
tuators, sensors and biosensors, transistors, batteries, capacitors, tion of nanodevices and chemical and biological sensors and so on [1–3,
printed circuit boards and anti-static coatings as well as in optoelec- 6,14–16]. Because they have superior advantages over other nanostruc-
tronics nanodevices. [1,3–6]. tured materials such as silicon nanowires (SiNWs) and carbon
Polypyrrole (PPy) is one of the most considerable conducting nanotubes (CNTs) that have been applied in various types of devices
polymers because of its high electrical conductivity upon doping, and sensors recently for instance, fabrication of nanostructures by
ease of synthesis, thermal and environmental stability, biocompati- conducting polymer can easily be carried out using well established
bility and its film forming property [1,7]. Because PPys are insoluble electrochemical or chemical synthesis methods at ambient
in most organic solvents except using some approaches such as conditions whereas both silicon nanowires (SiNWs) and carbon
nanotubes (CNTs) require rough conditions such as elevated
⁎ Corresponding author. Tel.: +98 41 3345 9083; fax: +98 41 344 4413, +98 41 3344
temperatures and expensive techniques such as vapor–liquid–solid
4313. processes, chemical vapor deposition or laser ablation for their
E-mail address: pourabas@sut.ac.ir (B. Pourabbas). fabrication [15,17–21].
http://dx.doi.org/10.1016/j.tsf.2015.03.043
0040-6090/© 2015 Elsevier B.V. All rights reserved.
256 M. Mahmoodian et al. / Thin Solid Films 583 (2015) 255–263
In this paper, ultra-thin films of conducting PPy were deposited on with nitrogen. Moderately hydrophilic surfaces were obtained by this
insulating surfaces of glass and oxidized silicon wafer by in situ chemical procedure for silanization.
polymerization in the presence of different anionic dopants to investi- Surface modification was accomplished by liquid phase deposition
gate their effects on thickness, morphology and conductivity of the of Py-silane in an organic solvent on the hydrophilic surfaces. All
thin films of PPy in order to obtain uniform nano-thickness films silanization steps were performed in a glove-box under ultra-pure
with relatively high conductivity. Chemical structure, thickness, argon atmosphere to be protected from atmospheric water vapor. The
and conductivity properties of the thin films were studied by atten- freshly cleaned substrates were immersed in a 3 mM solution of the
uated total reflectance Fourier transform infrared (ATR-FTIR) spec- Py-silane in dry acetonitrile for 4 h. After the substrates had been
trometer, ellipsometry, and four-point probe measurements. The removed from the solution, they were rinsed first with acetonitrile
surface properties including hydrophilicity/hydrophobicity and and then with ethanol to remove any physically adsorbed material.
the morphology were characterized before and after deposition Then they were dried and stored under argon for the next steps.
of PPy thin films on surfaces modified by monolayer of N-(3-
trimethoxysilylpropyl)pyrrole (Py-silane) using contact angle mea- 2.3. Polymerization and deposition of conducting PPy
surements, field emission scanning electron microscopy (FE-SEM)
and atomic force microscopy (AFM). As the general procedure, two solutions (one containing the mono-
The glass surfaces covered by ultra-thin films of conducting PPy can mer and the other, oxidant and dopant) were prepared separately and
be used in electrochromic devices [4] and ultra-thin films of conducting then mixed together to start polymerization. Polymerization time was
PPy deposited or grown on the insulating SiO2 surface by adjusting recorded when the two solutions became mixed together.
the doping degree can be used as a semiconducting layer in metal- APS (0.05 M, oxidant/monomer molar ratio of 5:1) and dopant
insulator semiconductor field effect transistor devices [22]. (0.03 M, dopant/monomer molar ratio of 3:1) DBSNa, SDS, α-NSA,
AQSANa-SSCA (SSCA/AQSANa molar ratio of 7:1) mixture and CSA
2. Experimental details was dissolved in 65 mL of deionized water at room temperature
to make “solution A”. Its temperature was lowered to 5 °C using
2.1. Materials and substrates ice/water bath. The substrate slide (~ 1.5 × 2.5 cm2) modified with
Py-silane was then placed vertically in the solution A for 5 min.
Py-silane (MW = 229.35) was obtained from Gelest Inc. Later, aqueous solution of pyrrole (0.01 M, 45 μL in 65 mL deionized
(Morrisville, PA), concentrated sulfuric acid (H2SO4, 95–98%), am- water), “solution B”, was added slowly to solution A with vehement
monium hydroxide (NH4OH, 25%), hydrogen peroxide (H2O2, 30%), magnetic stirring at 5 °C.
pyrrole (+ 97%), extra pure ammonium peroxodisulfate (APS, After an elapsed time of polymerization, 10 min to 24 h for different
+ 98%), anthraquinone-2-sulfonic acid sodium salt monohydrate purposes, the substrates were taken out, washed and sonicated in
(AQSANa, + 97%), 5-sulfosalicylic acid dihydrate (SSCA, + 99%), deionized water for at least 10 min to remove any physisorbed materials
sodium dodecyl sulfate (SDS, 90%), α-naphthalene sulfonic acid and then dried by nitrogen. By this method, different conducting
(α-NSA, + 70%), acetonitrile (+ 99.9%), absolute ethanol, methanol, PPy thin films were obtained by different dopants which are named
2-propanol, diethyl ether and molecular sieve were purchased from hereafter as PPy-DBSNa, PPy-SDS, PPy-α-NSA, PPy-(AQSANa-SSCA),
Merck. Sodium dodecylbenzenesulfonate (DBSNa, 80%) from Fluka and PPy-CSA.
and camphor sulfonic acid (CSA, 98%) was prepared from Aldrich.
Pyrrole was redistilled in vacuum just before use and acetonitrile 2.4. Instruments
(+99.9%) was dried prior to use first by clean and dry molecular sieve
for at least 3 days and then distillation. SDS was kept under diethyl Equilibrium contact angles were measured by sessile drop technique
ether for 24 h and pure SDS was obtained after filtration and recrystal- using a TZM-2 microscope (BEL Company, Italy) under ambient labora-
lization from water/ethanol mixture (50:50, v/v) [23]. Purification of tory conditions. A 2 μL drop of deionized water was placed on the
DBSNa was carried out first by keeping in a mixture of isopropyl surface and the contact angle was measured after 15 s. ImageJ 1.43u
and methyl alcohol (50: 50, v/v) for 24 h and then filtration and recrys- bundled with 32-bit Java 1.7.0 from Oracle Corporation was used for
tallization from water [24]. The other chemicals were used without contact angle measurements on the microscopy images of the drops.
further purification. Standard microscopy glass slides from Paul The measurements were repeated on three samples and average value
Marienfeld GmbH & Co. KG (26 × 76 × 1 mm) were used as the glass was reported with standard deviation, for n = 5 measurements per
substrates and polished Si (100) wafers (100 mm diameter, n-doped, each slide. Angles below 8° were considered as zero for accuracy of
0–100 ohm-cm, test grade) covered by native oxide from University the measurements.
Wafer were used as the Si substrates. ATR-FTIR spectra of PPy thin films deposited on glass surfaces were
recorded on a Bruker Tensor 27 FT-IR spectrometer with OPUS data
2.2. Cleaning and silanization of slides collection program (version 1.1) using the standard pike ATR cell.
Surface morphology of PPy thin films on modified surfaces was studied
At first polished Si wafers were cleaned by RCA standard method using FE-SEM (Hitachi, S-4160) with operating voltage 20 or 30 kV.
(NH4OH:H2O2 (30%):H2O 1:1:5), in which a solution of 25% ammonia However, morphology of PPy nanoparticles in solution was observed
solution in water was heated to 70 °C and then H2O2 (30%) was using transmission electron microscopy (TEM, Philips, CM30,
added. The silicon wafer was submerged in the solution and held at 300 keV). Samples for TEM were prepared by drying a small drop of
70 °C for 15 min. The wafer was removed, washed several times with dispersion solution of the particles in distilled water on 300 mesh
deionized water, dried by nitrogen stream and used immediately. copper grid.
Then, silicone oxide (100 nm) was grown on Si surface by dry thermal Ellipsometric measurements were carried out using an ESP300
oxidation method. Si/SiO2 surface preparation was carried out at Motion Controller/Driver ellipsometer with a 632.8 nm He/Ne laser
1050 °C and 15 sccm O2 flow for 2 h. and with Si/SiO2 as the substrate. Electrical conductivity measurements
Prior to monolayer deposition, glass and Si/SiO2 substrates were of PPy thin films deposited on modified Si/SiO2 were performed with
cleaned by Piranha solutions consisting of H2SO4/H2O2 (6:1, v/v) at four-point probe method using a Keithley 224 high-current source
85–87 °C for glass slides and 12:1 (v/v) at 93–95 °C for Si/SiO2 slides measure unit. Topology and surface roughness of Py-silane and PPy
for 1 h followed by rinsing and sonicating with plenty of deionized thin films deposited on modified Si/SiO2 surface were investigated by
water. The cleaned substrates were used immediately after drying an AFM (model NT-MDT, Next Solver company).
M. Mahmoodian et al. / Thin Solid Films 583 (2015) 255–263 257
Table 1
Chemical structure of anionic dopants.
3. Results and discussion surface to improve adhesion properties of the deposited films [1,14].
On the other hand, immobilization of PPy thin film can be improved
3.1. Mechanism of deposition of conducting PPy thin films by modification of the substrate with a pyrrole bearing coupling agent
such as py-silane [14] as a self-assembled monolayer (SAM).
Thin films of conducting PPy were deposited on the modified glass Firstly, by immersion of modified surfaces in solution A, the oxidant
and Si/SiO2 surfaces by in situ chemical polymerization in the presence APS, oxides and interacts with pyrrole rings of the SAM to convert it into
of anionic surfactants and sulfonic acids as dopants as shown in Table 1. cation radicals. Then the organic anions in the solution A attach to
It has been demonstrated that the presence of surfactants or sulfonic pyrrole cation radicals with electrostatic interactions. When solution B
acids in polymerization process promotes wettability of the substrate containing pyrrole monomer is added to solution A, due to large
Fig. 1. Schematic diagram of deposition of conducting PPy thin films on modified surface.
258 M. Mahmoodian et al. / Thin Solid Films 583 (2015) 255–263
Table 2 immediately after rinsing with deionized water and drying with N2
Mean contact angle values for glass and Si/SiO2 surfaces. which are reported in Table 2.
Contact angle (°) For glass slides before cleaning by Piranha solution, the mean contact
Substrate Before cleaning by After cleaning by After modification
angle is 59.8 ± 7.0° that is consistent with the values reported in the
Piranha solution Piranha solution by Py-silane literature and is lower than the mean contact angle for Si/SiO2
(67.0 ± 3.3°). This may be due to the difference in surface nature be-
Glass 59.8 ± 7.0 ~0 61.0 ± 6.0
Si/SiO2 67.0 ± 3.3 ~0 68.0 ± 5.6 tween glass and thin film of SiO2 grown on the surface of silicon wafer
by thermal oxidation. Noticeably, RCA standard cleaning procedure
followed by thermal oxidation process for silicon wafer results in higher
amounts of APS in the solution, pyrrole molecules become oxidized and roughness and therefore higher contact angle with respect to glass.
start to polymerize through the known mechanism via cation-radical Considerable difference in contact angle value was observed for silicon
intermediates. In this way, one possibility is free PPy formation i.e. in wafer carrying a native silicon oxide layer (43.6 ± 2.4°) compared to
the solution and the next one is film formation on SAM layer. The latter Si/SiO2 (67.0 ± 3.3°) which can be attributed to metal particles and
process is favored by amphiphilic organic anions which are aggregated other contaminations.
on the SAM layer as described above making a hydrophobic affinity For making the covalent attachment of functional organo-silanes
for pyrrole molecules or cation radicals from the aqueous solution, as such as Py-silane to glass, silica or Si/SiO2 and for uniform deposition
shown in Fig. 1. This leads to uniform thin films of PPy with nano- of SAM on the surface, surface treatments by Piranha solutions compos-
scale thickness on glass or Si/SiO2 substrates which will be verified by ing of different volume ratios of H2SO4 and H2O2 at different tempera-
appropriate techniques later in the text. PPy thin films deposited on tures were used at fixed treatment time (1 h). This resulted in
the modified glass during 10 min of polymerization were transparent hydrophilic surfaces. In several trials, H2SO4:H2O2 (7:3 v/v) at 65 °C
for PPy-DBSNa, PPy-SDS, and PPy-(AQSANa-SSCA) but with little black for glass and H2SO4:H2O2 (8:1 v/v) at 85 °C for Si/SiO2 substrates were
and blue hue for PPy-α-NSA and more for PPy-CSA. examined however, the results were not satisfying in terms of the
obtained hydrophilic surfaces (mean contact angles were 17.7 ± 4.0°
for glass and 45.4 ± 6.6° for Si/SiO2). Therefore, H2SO4:H2O2 (6:1 v/v)
3.2. Surface analysis, contact angle measurements, SEM and AFM at 85 °C for glass and H2SO4:H2O2 (12:1 v/v) at 95 °C for Si/SiO2 were
used with almost zero contact angle for both substrates.
Water contact angle measurement is a rapid qualitative test for SAM Then modification with Py-silane was performed on treated glass
formation of silanes and thin films of deposited materials on the and Si/SiO2 slides according to the procedure described in Section 2.2.
surfaces [25,26]. In this work, the contact angles were measurements Py-silane layer formation on the surfaces is evident by contact angles
Fig. 2. FE-SEM images of (a) Si/SiO2 and (b) glass surfaces modified by SAM of Py-silane, (c, d) PPy-DBSNa, (e, f) PPy-SDS, (g, h) PPy-α-NSA, (m, n) PPy-(AQSANa-SSCA), and (p, q) PPy-CSA
thin film deposited on modified Si/SiO2 and glass surfaces respectively.
M. Mahmoodian et al. / Thin Solid Films 583 (2015) 255–263 259
showing hydrophobic properties due to pyrrole rings on the modifying 3.3. Contact angle measurements of conducting PPy thin films
agent which can be seen in Table 2. As can be seen in Table 2, the mean
contact angle for Py-silane modified glass is somewhat lower than that Contact angle measurements were carried out after PPy thin film
of Si/SiO2 which can be due to the different surface topology of modified deposition on the surfaces in order to prove deposition. Data are collect-
glass and Si/SiO2 surfaces as can be seen in FE-SEM images (Fig. 2a and ed in Table 3, the mean contact angle values for thin films of conducting
b). On the other hand, this can also be due to the different effect of PPy synthesized in the presence of five different types of dopants
Piranha solution on glass versus Si/SiO2 which is an effective factor on including anionic surfactants and sulfonic acids.
final morphology of the deposited Py-silane on the surfaces leading to The obtained mean contact angles for PPy thin films on glass and
different contact angles. Si/SiO2 surfaces showed different values but in the same order of hy-
Also for further characterization of the SAM of Py-silane on drophilicity ranging from 50 to 80° depending on the surface and the
surfaces, topology and roughness of Si/SiO2 surface after Py-silane surfactant used. The slight difference between the values observed
deposition was studied by non-contact atomic force microscopy for glass and Si/SiO2 can be attributed to different morphologies
(NC-AFM). Uniform smooth topology was observed for Py-silane obtained after modification by Py-silane as discussed previously.
layer on Si/SiO2 surface (Fig. 3a) with root mean square roughness The mean contact angles for thin films of PPy-DBSNa, PPy-SDS,
of 0.411 nm and average roughness of 0.331 nm over sampling area and PPy-(AQSANa-SSCA) are higher than for both glass and Si/SiO2
equal to 4.042 μm2. It is obvious to forecast almost same results for compared to thin films of PPy-α-NSA and PPy-CSA. This can be
smoothness of SAM of Py-silane on glass surface. interpreted in terms of the chemical structure of the surfactants and
Fig. 3. Topography of (a) SAM of Py-silane on Si/SiO2 surface, (b) PPy-DBSNa, (c) PPy-SDS, (d) PPy-α-NSA, (e) PPy-(AQSANa-SSCA), and (f) PPy-CSA thin film deposited on modified Si/
SiO2 surface by NC-AFM.
260 M. Mahmoodian et al. / Thin Solid Films 583 (2015) 255–263
Table 3
Mean contact angle values for PPy thin films deposited on modified glass and Si/SiO2
surfaces.
dopant ions (Table 1) which can penetrate through PPy film and be
absorbed to the positively charged surface of the film. For instance,
long alkyl chain in DBSNa and SDS and aromatic rings in AQSANa/
SSCA result in higher hydrophobicity of the films. From the other
hand, thin films of PPy-α-NSA and PPy-CSA with smaller nonpolar
portions in the dopant ions show lower contact angles.
Fig. 4. ATR-FTIR spectra of conducting PPy thin films deposited on modified glass surface,
3.4. SEM and AFM characterization of conducting PPy thin films (a) PPy-DBSNa, (b) PPy-SDS, (c) PPy-α-NSA, (d) PPy-(AQSANa-SSCA), and (e) PPy-CSA.
Table 4
Dummy.
Conductivity Conductance Sheet Resistivity Average Roughness Root Mean Square Thickness Conductive Polymer
(σ) (S/cm) (S) (kΩ)-1 (R) (kΩ/□) (nm) Roughness (nm) (t) (nm)
871 cm−1 in PPy-CSA (Fig. 4e) can be attributed to stretching vibrations different electrical sheet resistivity or conductivity as well. It is notice-
of C–N bonds. able that different thickness of the films is related to different dopants
Peak appeared at 1518–1545 cm−1 is attributed to stretching vibra- used because all the other conditions were the same in PPy thin film
tions of C = C bonds in the pyrrole rings. The intensity of these peaks is deposition process. In Table 4, thin films of PPy-DBSNa and PPy-SDS in
low for PPy-DBSNa (Fig. 4a) and PPy-SDS (Fig. 4b) and higher for PPy- which long flexible alkyl chains (Table 1) are in the chemical structure
(AQSANa-SSCA) (Fig. 4d), PPy-α-NSA (Fig. 4c), and PPy-CSA (Fig. 4e) of the dopant anion, have the lowest thickness among the other
respectively. samples. Also, PPy-(AQSANa-SSCA) with large aromatic groups in the
dopant molecule has lower thickness than PPy-α-NSA and PPy-CSA.
3.6. Ellipsometery and electrical properties of conducting PPy thin films On the other hand, thin films of PPy-α-NSA and PPy-CSA with relatively
small molecules as the dopant have shown higher thicknesses.
The thickness, sheet resistivity, conductance, and conductivity of Electrical conductivity of the samples shown in Table 4, are relatively
conducting PPy thin films deposited on modified Si/SiO2 are summa- high and comparable. Conductivity is a function of few parameters
rized in Table 4. Refractive index for PPy thin films was considered to including:
be 1.817 for ellipsometry measurements [31].
As can be seen in Table 4, PPy thin films deposited for 10 min have – Doping level,
different and comparable thicknesses in the range of 6–31 nm showing – Molecular structure of the dopant,
Fig. 5. TEM images of (a, b) PPy-SDS, (c, d) PPy-α-NSA, (e, f) PPy-(AQSANa-SSCA), and (g, h) PPy-CSA nanoparticles.
262 M. Mahmoodian et al. / Thin Solid Films 583 (2015) 255–263
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