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IRFB7437PbF
Applications HEXFET® Power MOSFET
l Brushed Motor drive applications
l BLDC Motor drive applications
D VDSS 40V
l Battery powered circuits RDS(on) typ. 1.5mΩ
l Half-bridge and full-bridge topologies max. 2.0mΩ
l Synchronous rectifier applications
l Resonant mode power supplies
G
ID (Silicon Limited) 250A c
l OR-ing and redundant power switches S ID (Package Limited) 195A
l DC/DC and AC/DC converters
l DC/AC Inverters
D
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
l Fully Characterized Capacitance and Avalanche SOA S
D
l Enhanced body diode dV/dt and dI/dt Capability G
l Lead-Free
TO-220AB
l RoHS Compliant, Halogen-Free* IRFB7437PbF
G D S
Gate Drain Source
Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
( Ω)
6 250
RDS (on), Drain-to -Source On Resistance m
4
150
3
TJ = 125°C
100
2
1 TJ = 25°C 50
0 0
4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V) TC , Case Temperature (°C)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature
Notes:
Calculated continuous current based on maximum allowable junction
Pulse width ≤ 400μs; duty cycle ≤ 2%.
temperature. Bond wire current limit is 195A. Note that current Coss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with as Coss while VDS is rising from 0 to 80% VDSS .
some lead mounting arrangements. (Refer to AN-1140) Coss eff. (ER) is a fixed capacitance that gives the same energy as
Repetitive rating; pulse width limited by max. junction Coss while VDS is rising from 0 to 80% VDSS .
temperature. Rθ is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 0.069mH Limited by TJmax starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 40A, VGS =10V.
RG = 50Ω, IAS = 100A, VGS =10V. * Halogen -Free since April 30, 2014
ISD ≤ 100A, di/dt ≤ 1166A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
VSD Diode Forward Voltage ––– 1.0 1.3 V TJ = 25°C, IS = 100A, VGS = 0V g
dv/dt Peak Diode Recovery f ––– 3.1 ––– V/ns TJ = 175°C, IS = 100A, VDS = 40V g
trr Reverse Recovery Time ––– 30 ––– ns TJ = 25°C VR = 34V,
––– 30 ––– TJ = 125°C IF = 100A
Qrr Reverse Recovery Charge ––– 24 ––– nC TJ = 25°C di/dt = 100A/μs g
––– 25 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 1.3 ––– A TJ = 25°C
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)
100
10 4.5V
4.5V
TJ = 175°C
1.6
100
(Normalized)
1.4
TJ = 25°C 1.2
10
1.0
100000 14
VGS = 0V, f = 1 MHZ
ID= 100A VDS = 32V
Ciss = Cgs + Cgd, Cds SHORTED
VGS, Gate-to-Source Voltage (V)
12 VDS = 20V
Crss = Cgd
Coss = Cds + Cgd
10
C, Capacitance (pF)
10000
Ciss
8
6
Coss
Crss
1000 4
0
100 0 40 80 120 160 200
1 10 100 QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000
100μsec
TJ = 175°C
100
100 1msec
Limited by Package
TJ = 25°C
10
10 10msec
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1 1 DC
Tc = 25°C
Tj = 175°C
VGS = 0V Single Pulse
0.1 0.1
0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10
Fig 9. Typical Source-Drain Diode Fig 10. Maximum Safe Operating Area
Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
50 1.2
Id = 1.0mA
1.0
48
0.8
Energy (μJ)
46
0.6
44
0.4
42 0.2
0.0
40
0 10 20 30 40 50
-60 -40 -20 0 20 40 60 80 100120140160180
VDS, Drain-to-Source Voltage (V)
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical COSS Stored Energy
8
RDS (on) , Drain-to-Source On Resistance (mΩ)
VGS = 5.5V
7
VGS = 6.0V
6
5
VGS = 7.0V
4 VGS = 8.0V
VGS = 10V
1
0 100 200 300 400 500
ID , Drain Current (A)
D = 0.50
0.20
Thermal Response ( ZthJC )
0.1
0.10
0.05
0.02
0.01
0.01
1000
10
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25 50 75 100 125 150 175
Iav = 2DT/ [1.3·BV·Zth]
Starting TJ , Junction Temperature (°C) EAS (AR) = PD (ave)·tav
4.5 10
IF = 60A
VGS(th), Gate threshold Voltage (V)
4.0 VR = 34V
8
TJ = 25°C
3.5
TJ = 125°C
3.0 6
IRR (A)
ID = 150μA
2.5 ID = 1.0mA 4
ID = 1.0A
2.0
2
1.5
1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000
TJ , Temperature ( °C ) diF /dt (A/μs)
Fig 17. Threshold Voltage vs. Temperature Fig. 18 - Typical Recovery Current vs. dif/dt
10 140
IF = 100A IF = 60A
VR = 34V 120 VR = 34V
8 TJ = 25°C
TJ = 25°C
100 TJ = 125°C
TJ = 125°C
6
QRR (nC)
80
IRR (A)
60
4
40
2
20
0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
diF /dt (A/μs) diF /dt (A/μs)
Fig. 19 - Typical Recovery Current vs. dif/dt Fig. 20 - Typical Stored Charge vs. dif/dt
140
IF = 100A
120 VR = 34V
TJ = 25°C
100 TJ = 125°C
QRR (nC)
80
60
40
20
0
0 200 400 600 800 1000
diF /dt (A/μs)
VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple ≤ 5% ISD
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
20V
VGS
tp 0.01Ω
I AS
Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms
RD
VDS VDS
VGS
90%
D.U.T.
RG
+
- VDD
V10V
GS 10%
Pulse Width ≤ 1 µs VGS
Duty Factor ≤ 0.1 %
td(on) tr t d(off) tf
Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms
Current Regulator Id
Same Type as D.U.T. Vds
Vgs
50KΩ
12V .2μF
.3μF
+
V
D.U.T. - DS
Vgs(th)
VGS
3mA
IG ID
Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr
Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform
8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
IRFB7437PbF
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Qualification level Industrial
(per JEDEC JESD47F††guidelines)
Moisture Sensitivity Level TO-220 Not applicable
RoHS compliant Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date Comment
• Updated data sheet with new IR corporate template.
• Updated typo on the fig.19 and fig.21, unit of y-axis from "A" to "nC" on page7.
4/22/2014
• Updated package outline and part marking on page 9.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
• Updated EAS (L =1mH) = 802mJ on page 2
1/6/2015
• Updated note 9 “Limited by TJmax , starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 40A, VGS =10V”. on page 2